WO2016002515A1 - ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 - Google Patents
ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 Download PDFInfo
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- WO2016002515A1 WO2016002515A1 PCT/JP2015/067433 JP2015067433W WO2016002515A1 WO 2016002515 A1 WO2016002515 A1 WO 2016002515A1 JP 2015067433 W JP2015067433 W JP 2015067433W WO 2016002515 A1 WO2016002515 A1 WO 2016002515A1
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- valve
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
- F16K1/32—Details
- F16K1/34—Cutting-off parts, e.g. valve members, seats
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
- F16K7/12—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm
- F16K7/14—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
- F16K7/12—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm
- F16K7/14—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat
- F16K7/17—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat the diaphragm being actuated by fluid pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
Definitions
- the present invention relates to a diaphragm valve, a fluid control device, a semiconductor manufacturing device, and a semiconductor manufacturing method, and is particularly suitable for use in a gas supply unit of a semiconductor manufacturing device and contributes to downsizing of the entire device while maintaining a necessary flow rate.
- the present invention relates to a miniaturized diaphragm valve, a fluid control apparatus including such a diaphragm valve, a semiconductor manufacturing apparatus including the fluid control apparatus, and a semiconductor manufacturing method using the semiconductor manufacturing apparatus.
- Patent Document 1 As a gas supply unit (fluid control device) in a semiconductor manufacturing apparatus (CVD, etching apparatus, etc.), for example, the one shown in FIG. 7 is conventionally known (Patent Document 1).
- one line (C) of the fluid control device is composed of a plurality of upper members and a plurality of lower members.
- the upper members include a check valve (21), a pressure regulator (22), and a pressure sensor (23).
- an L-shaped passage block joint (32) connected to the check valve (21) and fitted with an inlet joint (31), a check valve (21) and a pressure regulator (22) V-shaped passage block joint (33) that communicates with the pressure regulator, V-shaped passage block joint (33) that communicates the pressure regulator (22) and the pressure sensor (23), and the reverse V-shape with the pressure sensor (23).
- V-shaped passage block joint (33) communicating with the V-shaped passage block (24), and blocking with the inverted V-shaped passage block (24)
- a V-shaped passage block joint (33) communicating with the opener (25), a V-shaped passage block joint (33) communicating with the breaker opener (25) and the mass flow controller (26), and a mass flow controller ( 26) and a V-shaped passage block joint (33) communicating with the on-off valve (27), and a V-shaped passage block joint (33) communicating between the on-off valve (27) and the inverted V-shaped passage block (28).
- a character-shaped passage first block joint (32) is arranged.
- Various joint members (31) (32) (33) (34) as lower members are placed on one elongated sub-board (40), and these lower members (31) (32) (33) ( 34)
- Various fluid control devices (21), (22), (23), (24), (25), (26), (27), (28), and (29) as upper members are attached to one line (C ) Is formed, and a plurality of lines having a configuration similar to this line (C) are arranged in parallel on the main board (20), and the circuit breakers (25) of each line (C) are
- the fluid control device is formed by connecting by three passage connecting means (50) comprising three I-shaped passage block joints (51) and a tube (52) connecting the I-shaped passage block joints (51).
- the semiconductor manufacturing process is performed in a clean room in order to prevent pattern defects caused by particles.
- the initial cost and the running cost at the time of construction increase in proportion to the increase in the volume of the clean room.
- An increase in running cost or the like leads to an increase in manufacturing cost. Therefore, in a semiconductor manufacturing apparatus that is permanently used in a clean room, downsizing of the entire apparatus is an issue, and therefore downsizing is also a major issue in a fluid control device used in a semiconductor manufacturing apparatus. .
- Patent Document 2 discloses a body provided with a fluid inflow passage, a fluid outflow passage, and a recess opening upward, and a seat disposed at the periphery of the fluid inflow passage formed in the body.
- An elastically deformable spherical shell diaphragm that opens and closes the fluid inflow passage by being pressed and separated from the seat, a holding adapter that holds the outer peripheral edge of the diaphragm between the bottom surface of the recess of the body, and the diaphragm What is provided with the diaphragm pressing which presses the center part of this, and the up-and-down moving means which moves a diaphragm pressing up and down is disclosed.
- the diaphragm When the diaphragm valve is downsized, the diaphragm is also downsized. As a result, the space width between the seat and the diaphragm is narrowed, and the flow rate is reduced. If the space width between the sheet and the diaphragm is increased in order to prevent the flow rate from decreasing, the stroke of the diaphragm increases, resulting in a problem that the durability of the diaphragm decreases.
- the pressing adapter has a tapered shape whose entire lower surface has a predetermined inclination angle, and the bottom surface of the recess of the body is connected to the circular flat portion and the outer periphery of the flat portion.
- the diaphragm has a recessed portion recessed with respect to the flat portion, and the diaphragm is in contact with the tapered lower surface of the holding adapter when the fluid passage is open, And the taper angle of the bottom surface of the presser adapter is 15.5 to 16.5 with respect to the flat portion of the bottom surface of the body recess. Durability is improved by setting the radius of curvature of the surface abutting on the diaphragm holding diaphragm to 10.5 to 12.5 mm at 5 °.
- An object of the present invention is to provide a diaphragm valve capable of increasing the flow rate without causing a decrease in the durability of a miniaturized diaphragm valve.
- Another object of the present invention is to provide a fluid control device including such a diaphragm valve, a semiconductor manufacturing device including the fluid control device, and a semiconductor manufacturing method using the semiconductor manufacturing device.
- a diaphragm valve according to the present invention includes a fluid inflow passage, a fluid outflow passage, a body provided with an upwardly opened recess, a seat disposed at the periphery of the fluid inflow passage formed in the body, and a pressing / separation to the seat.
- the flat part of the bottom surface of the body recess includes a groove opening so as to include a portion opened to the bottom surface of the recess of the fluid outflow passage.
- the fluid flowing in from the fluid inflow passage flows into the space surrounded by the bottom surface of the recess of the body and the diaphragm, and flows out to the outside through the fluid outflow passage.
- the holding adapter has a tapered shape whose entire lower surface has a predetermined inclination angle, and the bottom surface of the recessed portion of the body is continuous with the circular flat part and the outer periphery of the flat part and is recessed with respect to the flat part.
- the diaphragm has a recess, and the diaphragm has an upper surface of the outer peripheral edge that is in surface contact with the tapered lower surface of the holding adapter and a lower surface of the outer peripheral edge is the bottom surface of the recess of the body when the fluid passage is open. It is preferable to be in line contact with the outer periphery of the flat portion.
- the upper surface of the outer peripheral edge of the diaphragm is in surface contact with the lower surface of the pressing adapter in a state where the fluid passage is open (usually in a spherical shell shape convex upward).
- the deformation from the spherical shell shape which is a natural state, can be suppressed to be small.
- the lower surface of the outer peripheral edge of the diaphragm is in line contact with the outer periphery of the flat portion of the bottom surface of the recess of the body, the diaphragm is in a natural state even when held by the holding adapter and the body. The state where the deformation from the spherical shell shape is suppressed to be small is maintained.
- a groove is provided in the flat portion of the bottom surface of the body recess so as to include a portion opened to the bottom surface of the recess of the fluid outflow passage.
- the groove is provided so as to leave a flat portion outer periphery for supporting the outer peripheral edge of the diaphragm.
- the inner circumference of the groove may not cover the sheet (the groove becomes an annular groove) or may include a portion holding the sheet (the groove becomes a so-called “spot”).
- the height of the part holding the sheet is the same as the height of the outer periphery of the flat part for supporting the outer peripheral edge of the diaphragm, and in the case of a spot, the part holding the sheet The height is reduced by the amount of counterbore.
- the cross-sectional shape of the fluid outflow passage is usually a circular hole, and the diameter is set according to the diameter of the fluid inflow passage, the space width between the sheet and the diaphragm, and the like.
- the cross-sectional shape of the fluid outflow passage may be a long hole instead of a circle.
- a cross-sectional area that cannot be obtained with a circular one can be obtained by using a long hole.
- the diaphragm valve may be a manual valve such as an open / close handle as the vertical movement means, or an automatic valve in which the vertical movement means is an appropriate actuator.
- the actuator is a fluid (air) It may be by pressure or by electromagnetic force.
- the moving direction of the stem of the diaphragm valve is referred to as the vertical direction, but this direction is convenient, and in actual mounting, the vertical direction is not only the vertical direction. , Sometimes horizontal.
- the fluid control device is a fluid control device including an on-off valve as a fluid control device, and is characterized in that the on-off valve is the above-described diaphragm valve.
- the above diaphragm valve can be miniaturized while maintaining the required flow rate, and by using this as an on-off valve of the fluid control device, a miniaturized fluid control device can be obtained.
- Such a fluid control device can contribute to miniaturization of a semiconductor manufacturing apparatus by being used in a semiconductor manufacturing apparatus.
- a semiconductor manufacturing apparatus is characterized by including the above-described fluid control device as a gas supply unit.
- the fluid control device is miniaturized by using the diaphragm valve, and a semiconductor manufacturing apparatus equipped with such a fluid control device as a gas supply unit is miniaturized. .
- the semiconductor manufacturing apparatus may be any of a CVD apparatus, a sputtering apparatus, or an etching apparatus.
- the semiconductor manufacturing method according to the present invention is characterized in that a semiconductor is manufactured using the semiconductor manufacturing apparatus described above.
- the installation area in the clean room is reduced, the running cost (manufacturing cost) of the clean room is reduced, and a semiconductor obtained by a cheaper manufacturing method can be obtained.
- the diaphragm valve of the present invention since the groove is provided in the flat portion of the bottom surface of the body recess so as to include the portion opened to the bottom surface of the recess of the fluid outflow passage, the diaphragm can be downsized. The flow rate can be increased without reducing the durability of the valve.
- FIGS. 1A and 1B are diagrams showing a first embodiment of a diaphragm valve according to the present invention, in which FIG. 1A is a longitudinal sectional view of an essential part, and FIG. 1B is a plan view of FIG. 1A with the diaphragm removed.
- FIG. 2 is a diagram showing dimensions of each part of the diaphragm valve according to the first embodiment, and corresponds to FIG. 6.
- FIGS. 3A and 3B are diagrams showing a second embodiment of the diaphragm valve according to the present invention, in which FIG. 3A is a longitudinal sectional view of an essential part, and FIG. 3B is a plan view of FIG. 3A with the diaphragm removed. .
- FIGS. 1A is a longitudinal sectional view of an essential part
- FIG. 3B is a plan view of FIG. 3A with the diaphragm removed.
- FIG. 4A and 4B are views showing a third embodiment of the diaphragm valve according to the present invention, in which FIG. 4A is a longitudinal sectional view of an essential part, and FIG. 4B is a plan view of FIG. 4A with the diaphragm removed.
- FIG. 5 is a longitudinal sectional view showing the overall configuration of each embodiment of the diaphragm valve according to the present invention.
- FIG. 6 is a diagram showing dimensions of each part of a conventional diaphragm valve.
- FIG. 7 is a side view showing an example of a fluid control device for a semiconductor manufacturing apparatus in which the diaphragm valve of the present invention is used.
- Diaphragm valve (2): Body, (2a): Fluid inflow passage, (2b): Fluid outflow passage, (2c): Recess, (4): Seat, (5): Diaphragm, (6 ): Diaphragm presser, (7): Stem, (8): Presser adapter, (14): Bottom, (14a): Flat part, (14b): Recessed part, (14c): Outer periphery, (15): Counterbore (groove) ), (16): annular groove, (17): long hole
- top and bottom and the left and right refer to the top and bottom and the left and right in FIG.
- FIG. 5 shows the basic shape of the diaphragm valve (1) according to the present invention.
- the diaphragm valve (1) has a fluid inflow passage (2a), a fluid outflow passage (2b), and a recess ( 2c), a block-shaped body (2), a cylindrical bonnet (3) whose lower end is screwed onto the upper part of the recess (2c) of the body (2), and a fluid inflow passage (2a)
- An annular sheet (4) provided on the periphery of the diaphragm, a diaphragm (5) that opens or closes the fluid inflow passage (2a) by being pressed or separated by the sheet (4), and a diaphragm holder that presses the center of the diaphragm (5) (6), a stem (7) which is inserted into the bonnet (3) so as to be movable up and down and presses and separates the diaphragm (5) against the seat (4) via the diaphragm presser (6), and the bonnet (3)
- the diaphragm (5) has a spherical shell shape, and an upwardly convex arc shape is in a natural state.
- the diaphragm (5) is made of, for example, a nickel alloy thin plate, and is formed in a spherical shell shape that is cut out in a circular shape and has a central portion bulged upward.
- the diaphragm (5) may be made of a stainless steel sheet or a laminate of a stainless steel sheet and a nickel / cobalt alloy sheet.
- FIG. 6 shows a main part of a small diaphragm valve in which the diaphragm valve according to the present invention is a conventional technique.
- the holding adapter (8) has a tapered shape in which the entire lower surface (8a) has a predetermined inclination angle.
- the bottom surface (14) of the recess (2c) of the body (2) has a circular flat portion (14a) and an annular shape that is continuous with the outer periphery of the flat portion (14a) and is recessed with respect to the flat portion (14a). And a recess (14b).
- the holding adapter (8) is fixed in a state in which the bonnet (3) is in contact with the outer peripheral edge of the diaphragm (5) from above by screwing the bonnet (3) onto the body (2).
- the entire bottom surface (8a) of the holding adapter (8) is tapered, so that the diaphragm (5) is not deformed from the spherical shell shape (upwardly convex arc shape) and the outer surface of the diaphragm adapter (8) is almost completely deformed.
- the upper surface of the peripheral edge in surface contact with the tapered lower surface (8a) of the retainer adapter (8) (in a wide range), the bottom surface of the recess (2c) in the retainer adapter (8) and the body (2) (14 ).
- the recess (14b) is provided on the outer peripheral edge of the bottom surface (14) of the recess (2c) of the body (2), the outer peripheral edge of the diaphragm (5) is placed in the recess (14b). Be contained. Therefore, the outer peripheral edge of the diaphragm (5) is not deformed along the bottom surface (14) of the recess (2c) of the body (2), and the bottom surface thereof is the bottom surface (14) of the recess (2c). ) Is in line contact with the outer periphery (diaphragm support portion) (14c) of the flat portion (14a).
- the diameter (L) of the diaphragm (5) is ⁇ 8, and the height (H) of the diaphragm (5) is 0.65 mm.
- the curvature radius (SR1) is SR13.5.
- the taper angle ( ⁇ ) of the lower surface (8a) of the holding adapter (8) is the flat portion (14a) of the bottom surface (14) of the recess (2c) of the body (2). )
- the curvature radius (SR2) of the surface (6a) of the diaphragm presser (6) that is in contact with the diaphragm (5) is SR12.
- FIG. 1 and 2 show the main part of a first embodiment of a diaphragm valve (1) according to the present invention.
- the flat portion (reference surface) (14a) of the bottom surface (14) of the recess (2c) of the body (2) is provided.
- a counterbore (15) is provided so as to include a portion opened in the bottom surface (14) of the recess (2c) of the fluid outflow passage (2b).
- the counterbore (15) is provided so as to leave the outer periphery (14c) of the flat portion (14a) for supporting the outer peripheral edge of the diaphragm (5).
- the inlet area of the fluid outflow passage (2b) formed in the bottom surface (14) of the recess (2c) of the body (2) is increased. Further, the height of the portion holding the sheet (4) in the bottom surface (14) of the recess (2c) of the fluid outflow passage (2b) is lowered by the counterbore (15).
- the height (H) of the diaphragm (5) is 0.4 mm, and the curvature thereof is different from the conventional one.
- the radius (SR1) is SR23.
- the diameter (L) of the diaphragm (5) is ⁇ 8, which is the same as the conventional one.
- the curvature radius (SR2) of the surface (6a) of the diaphragm presser (6) that is in contact with the diaphragm (5) is SR42, and the presser adapter (8)
- the lower surface (8a) has a taper angle ( ⁇ ) of 9 °.
- the curvature radius (SR2) of the surface (6a) of the diaphragm holder (6) that is in contact with the diaphragm (5) is increased.
- the load at the center of the diaphragm (5) is reduced.
- the taper angle ( ⁇ ) of the lower surface (8a) of the holding adapter (8) is set to an angle along the diaphragm (5), and in order to prevent interference with the diaphragm holding (6), the holding adapter (8 ) Has a large inner diameter.
- the diaphragm (5) is a laminate of two diaphragms having a thickness of 0.05 mm. This is the same between the prior art and the embodiment.
- the top of the diaphragm (5) is defined as the top of the bottom layer (wetted side) diaphragm. Therefore, in the diaphragm (5) in which two diaphragms are laminated, the vertex of the line passing through the center of the thickness becomes the vertex of the diaphragm (5).
- the vertex of the diaphragm (5) is the vertex of the upper surface of the diaphragm (5), and the vertex when there are three or more diaphragms is the same as when there are two diaphragms. If the part dimensions for one sheet are the same, the apex of the diaphragm (5) will be the same regardless of whether the number of diaphragms is one or four.
- Tables 1 and 2 show the comparison results of the first embodiment (small diaphragm valve) shown in FIGS. 1 and 2 and the conventional small diaphragm valve shown in FIG.
- Table 1 shows the differences between the first embodiment and the conventional small diaphragm valve shown in FIG. 6, and Table 2 shows a comparison with existing diaphragm valves of standard size (standard products). The specifications and performance are shown.
- the embodiment has extremely excellent durability, which is the same as that of the standard size, while being small, and more durable than the same small conventional product. It can be seen that not only the Cv value is increased.
- the Cv value is a capacity coefficient of the valve, and represents a flow rate when the fluid flows through the valve at a certain differential pressure.
- the shape (SR) of the diaphragm retainer (6) is SR42 and the retainer adapter (8 ) Is set to 9 °.
- the index of durability is set to “4 million times”, which is equivalent to that of the conventional product, the diaphragm holder (6) diaphragm is considered considering that the durability is 4 million times or more and there is a margin in durability.
- the curvature radius (SR) of the surface in contact with (5) is 30 mm or more, and the taper angle ( ⁇ ) of the lower surface of the holding adapter (8) is the bottom surface of the recess (2c) of the body (2) ( It is reasonable to set a condition for ensuring about 4 million times that the flat portion (14a) of 14) is 10 ° or less.
- Diaphragm (5) from diaphragm support (14c) of bottom surface (14) of recess (2c) of body (2) which is in pressure contact with diaphragm (5) when valve is opened The ratio of the distance C to the top is preferably 18: 1 to 30: 1.
- a preferable range of C when L is ⁇ 8 is 0.27 mm to 0.44 mm (about 0.25 mm to 0.45 mm).
- the ratio of the diameter of the diaphragm (5) and the distance from the recess (2c) bottom surface (14) of the body (2) in pressure contact with the diaphragm (5) to the top of the diaphragm (the height of the top of the diaphragm (5))
- the durability is remarkably reduced
- the flow rate is remarkably insufficient.
- the Cv value of the embodiment is twice that of the conventional one.
- the bottom surface (14) of the recess (2c) of the body (2) is flat.
- the point (14a) is provided with a counterbore (15) so as to include a portion opened to the bottom surface (14) of the recess (2c) of the fluid outflow passage (2b). That is, by providing the counterbore (15) and increasing the inlet area of the fluid outflow passage (2b), the Cv value is doubled compared to the conventional case.
- the Cv value decreases. That is, according to this embodiment, not only the decrease in the flow rate accompanying the shape change of the diaphragm (5) can be compensated, but also the flow rate can be greatly increased.
- the Cv value which is a contradictory performance
- the durability of the diaphragm are compatible at a high level.
- An annular groove (16) including a portion opened to the bottom surface (14) of the recess (2c) of 2b) may be provided.
- the depth of the annular groove (16) is larger than the depth of the counterbore (15).
- the portion holding the sheet (4) has the same shape as the conventional one.
- the sheet (4) can be caulked from both the outer diameter side and the inner diameter side of the sheet (4), and the sheet (4) is strongly fixed.
- the sheet (4) is caulked only from the inner diameter side of the sheet (4).
- the inlet area of the fluid outflow passage (2b) can be made larger than that of the annular groove (16), and the Cv value becomes larger.
- a counterbore (15) is provided as shown in FIG. 4, and the cross-sectional shape of the fluid outflow passage (2b) is a long hole (17). Good.
- the cross-sectional shape of the elongated hole (17) may be a semi-circular portion added to both ends of the rectangular portion, may be elliptical, or may be a crescent shape along the counterbore (15). Good.
- the long hole (17) can be combined with the annular groove (16) shown in FIG. That is, the cross-sectional shape of the fluid outflow passage (2b) that is circular in FIG. 3 may be the long hole (17) shown in FIG.
- the vertical movement means for moving up and down (6) is configured, the configuration of the vertical movement means is not limited to that shown in FIG.
- the diaphragm valve can be used as an on-off valve in the fluid control device shown in FIG. And since the said diaphragm valve is reduced in size and is excellent also in durability, the fluid control apparatus using this is used as a gas supply part in the semiconductor manufacturing apparatus in which size reduction is an issue. Suitable for
- Semiconductor manufacturing equipment includes CVD equipment, sputtering equipment, etching equipment, and the like.
- the CVD apparatus is an apparatus that includes an energy supply means, a vacuum chamber, a gas supply means (fluid control device), and an exhaust means, and forms a passive film (oxide film) on the wafer.
- Etching apparatus is an apparatus that is composed of an energy supply means, a processing chamber, a gas supply means (fluid control device), and an exhaust means, and that processes a material surface and the like by a corrosive action by a reactive gas.
- the sputtering apparatus is an apparatus for forming a film on the surface of a material, which includes a target, an energy supply means, a vacuum chamber, a gas supply means (fluid control device), and an exhaust means.
- the gas supply means (fluid control apparatus) is an indispensable configuration, and the semiconductor manufacturing apparatus can be downsized by reducing the size thereof. it can.
- the fluid control device is not limited to the one shown in FIG. 7, and the semiconductor manufacturing device is not limited at all.
- the flow rate can be increased without degrading the durability of the miniaturized diaphragm valve. Therefore, it is possible to contribute to the performance improvement of the diaphragm valve, the fluid control device including the diaphragm valve, and the semiconductor manufacturing apparatus. .
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Fluid Mechanics (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Fluid-Driven Valves (AREA)
- Lift Valve (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Valve Housings (AREA)
Abstract
Description
Claims (7)
- 流体流入通路、流体流出通路および上向きに開口した凹所が設けられたボディと、ボディに形成された流体流入通路の周縁に配置されたシートと、シートに押圧・離間されることで流体流入通路の開閉を行う弾性変形可能な球殻状ダイヤフラムと、ダイヤフラムの外周縁部をボディの凹所底面との間で保持する押さえアダプタと、ダイヤフラムの中央部を押圧するダイヤフラム押さえと、ダイヤフラム押さえを上下移動させる上下移動手段とを備えているダイヤフラム弁において、
ボディ凹所底面の平坦部に、流体流出通路の凹所の底面に開口している部分を含むように、溝が設けられていることを特徴とする請求項1のダイヤフラム弁。 - 流体流出通路の断面形状が、長孔とされていることを特徴とする請求項1のダイヤフラム弁。
- 流体制御機器として、開閉弁を備えている流体制御装置であって、該開閉弁が請求項1または2のダイヤフラム弁とされていることを特徴とする流体制御装置。
- 半導体製造装置で使用されることを特徴とする請求項3の流体制御装置。
- ガス供給部として請求項3の流体制御装置を備えたことを特徴とする半導体製造装置。
- 半導体製造装置は、CVD装置、スパッタリング装置またはエッチング装置であることを特徴とする請求項5の半導体製造装置。
- 請求項6の半導体製造装置を使用して半導体を製造することを特徴とする半導体製造方法。
Priority Applications (4)
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KR1020187032202A KR20180123185A (ko) | 2014-06-30 | 2015-06-17 | 다이어프램 밸브, 유체 제어 장치, 반도체 제조 장치 및 반도체 제조 방법 |
US15/322,553 US20170130848A1 (en) | 2014-06-30 | 2015-06-17 | Diaphragm valve, fluid control device, semiconductor manufacturing apparatus, and semiconductor manufacturing method |
KR1020167031850A KR20160143832A (ko) | 2014-06-30 | 2015-06-17 | 다이어프램 밸브, 유체 제어 장치, 반도체 제조 장치 및 반도체 제조 방법 |
CN201580033240.4A CN106471298A (zh) | 2014-06-30 | 2015-06-17 | 隔膜阀、流体控制装置、半导体制造装置以及半导体制造方法 |
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JP2014134979A JP6336345B2 (ja) | 2014-06-30 | 2014-06-30 | ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 |
JP2014-134979 | 2014-06-30 |
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PCT/JP2015/067433 WO2016002515A1 (ja) | 2014-06-30 | 2015-06-17 | ダイヤフラム弁、流体制御装置、半導体製造装置および半導体製造方法 |
Country Status (6)
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US (1) | US20170130848A1 (ja) |
JP (1) | JP6336345B2 (ja) |
KR (2) | KR20180123185A (ja) |
CN (1) | CN106471298A (ja) |
TW (1) | TWI672458B (ja) |
WO (1) | WO2016002515A1 (ja) |
Cited By (1)
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KR20190039025A (ko) | 2016-08-25 | 2019-04-10 | 가부시키가이샤 깃츠 에스시티 | 다이아프램 밸브와 반도체 제조 장치용 유량 제어 기기 |
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JP6372998B2 (ja) * | 2013-12-05 | 2018-08-15 | 株式会社フジキン | 圧力式流量制御装置 |
JP6564593B2 (ja) * | 2015-03-25 | 2019-08-21 | 株式会社フジキン | ダイヤフラム弁 |
JPWO2018168872A1 (ja) * | 2017-03-17 | 2020-01-30 | 株式会社フジキン | 流体制御機器 |
JP6929098B2 (ja) * | 2017-03-30 | 2021-09-01 | 株式会社キッツエスシーティー | メタルダイヤフラムバルブ |
KR102411152B1 (ko) * | 2017-05-02 | 2022-06-21 | 피코순 오와이 | Ald 장치, 방법 및 밸브 |
WO2019003900A1 (ja) * | 2017-06-30 | 2019-01-03 | 株式会社フジキン | バルブ装置 |
US11402029B2 (en) | 2018-04-06 | 2022-08-02 | Fujikin Incorporated | Valve device, fluid control system, fluid control method, semiconductor manufacturing system, and semiconductor manufacturing method |
US11536385B2 (en) * | 2018-07-09 | 2022-12-27 | Fujikin Incorporated | Fluid control device |
JP7144727B2 (ja) * | 2018-08-08 | 2022-09-30 | セイコーエプソン株式会社 | ダイヤフラム式圧縮機、プロジェクター、冷却機及び流体の圧縮方法 |
JP7187015B2 (ja) * | 2018-09-29 | 2022-12-12 | 株式会社フジキン | ダイヤフラムバルブ及び流量制御装置 |
WO2021019922A1 (ja) * | 2019-07-31 | 2021-02-04 | 株式会社フジキン | バルブ装置、流体制御装置及びバルブ装置の製造方法 |
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US20170130848A1 (en) | 2017-05-11 |
TW201606218A (zh) | 2016-02-16 |
KR20180123185A (ko) | 2018-11-14 |
JP2016011744A (ja) | 2016-01-21 |
JP6336345B2 (ja) | 2018-06-06 |
TWI672458B (zh) | 2019-09-21 |
CN106471298A (zh) | 2017-03-01 |
KR20160143832A (ko) | 2016-12-14 |
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