TWI818963B - 基板處理裝置及方法 - Google Patents

基板處理裝置及方法 Download PDF

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TWI818963B
TWI818963B TW108109151A TW108109151A TWI818963B TW I818963 B TWI818963 B TW I818963B TW 108109151 A TW108109151 A TW 108109151A TW 108109151 A TW108109151 A TW 108109151A TW I818963 B TWI818963 B TW I818963B
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substrate
reaction chamber
radiation
fluid
substrate carrier
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迪特 皮爾陸克斯
寇娜莉絲 塔迪爾斯 荷碧舒萊
維爾納 科納本
伯特 鍾布勒德
史蒂芬 凡艾爾德
凱莉 胡本
西奧多勒斯 烏斯特拉肯
理德 克里斯 狄
盧西恩 傑迪拉
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
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Abstract

本發明提供一種基板處理裝置，其包含一反應腔室，反應腔室具有一基板托架以在反應腔室中承載複數個基板。基板托架可具有複數個間隔開的基板承載部，其經配置以承載複數個基板。本發明之基板處理裝置具有一照射系統，其經建構並安排以照射具有100至500奈米之紫外輻射線至基板上表面。

Description

基板處理裝置及方法
本發明大體上相關於基板處理裝置及方法之領域。特別而言，本發明相關於一基板處理裝置之領域，基板處理裝置包含具有基板托架之一反應腔室，用以導引反應腔室中之複數個基板，此基板托架包含複數個間隔開的基板承載部，其經配置而以間隔開的關係承載複數個基板。
做為反應器之高溫爐可用作反應腔室以在基板上產生精細尺寸結構，例如積體電路。例如矽晶圓之多個基板可置放於基板承載器上，例如反應器內部之基板托架或晶舟。在傳統基板處理步驟中，可加熱基板。在傳統的基板處理步驟中，反應物氣體進一步通過已加熱基板，從而在基板上沈積反應物材料或氣體反應物之薄層。
對基板進行的一系列此等處理步驟被稱作配方。若所沈積層具有與下伏矽基板相同之結晶結構，則其被稱作磊晶層。有時亦被稱作單晶層，因為其僅具有一個晶體結構。經由後續沈積、摻雜、微影、蝕刻及其他處理，此等層被製成積體電路，從而取決於基板大小及電路複雜度而產生數十或數千或甚至數百萬積體裝置。
謹慎地控制各種製程參數以確保所得層之高品質。其中一個關鍵參數係每一配方步驟期間之基板溫度。在CVD期間，例如，沈積氣體在特定 溫度範圍窗口內反應且沈積於基板上。不同溫度導致不同沈積速率及品質。因此，準確地控制基板溫度以使基板在反應處理開始之前達到所要溫度係重要的。基板可包含溫度敏感性之特性，而因此溫度可加以限制於一特定最大值以避免損及此敏感性特性。
對於特定製程，需要能量於基板的上表面。若能量係以熱能的形式來提供，這導致在生產率、品質及/或反應性的矛盾需求，溫度應較高，然而溫度卻須維持在低點以避免損壞基板上之特性。
因此，目前在一反應腔室中提供能量至基板表面仍有其需求。
根據本發明之至少一個具體例，本發明提供一種基板處理裝置，其包含：一反應腔室；以及一基板托架，用於在反應腔室中提供複數個基板。基板托架可包含複數個間隔開的基板承載部，複數個間隔開的基板承載部經配置以間隔開的關係承載複數個基板。該裝置可包含一照射系統，其經建構並安排以從基板托架之一側邊照射具有100奈米至500奈米之紫外輻射線至基板托架中至少一基板之一上表面。
藉由以紫外輻射線從側邊照射基板之表面，使得能量可加以提供至上表面。該照射系統可經建購並安排以照射具有100奈米至500奈米的紫外線，較佳地為150奈米至400奈米，甚至更佳地為170奈米至300奈米。基板托架可移動式的於反應腔室中。
根據本發明之另一實施例，提供一種用基板處理方法，其包含：提供在一基板托架中之複數個基板，基板托架包含複數個間隔開的基板承載部，複數個間隔開的基板承載部經配置以間隔開的關係承載複數個基板；以及從該基板托架之一側邊照射具有100奈米至500奈米範圍之紫外輻射線至反應 腔室中基板托架中的基板。
為概述本發明之目的及相較於先前技術所達成之優點，本發明之特定目的及優點已描述於上文中。當然，應明瞭並非所有該等目的或優點皆可根據本發明之任何特定實施例來達成。因此，舉例而言，熟悉本技術之通常知識者當認知本發明可以本文所教示或建議完成或最佳化一個優點或一組優點來實施或做為實施例，而並不需完成在此之其他目的或其他優點來實施或做為實施例。
此等實施例全部將意圖涵蓋在本文所揭示之發明範疇內。此等及其他具體例將自以下參考附圖的某些實施例之詳細描述而對本領域通常知識者變得顯而易見，但本發明並不受限於所揭示之任何特定實施例。
1:裝置
2:外殼
3:隔板
4:隔板
5:隔板
6:反應器腔室
7:反應器腔室
8:儲存區
9:儲存隔間/隔間
10:晶匣
11:旋轉平台/平台
12:基板托架
12a:部分
13:基板
14:插入臂/臂
15:切口
16:鉸接臂/臂/擺臂
17:支承表面
18:旋轉點
19:開口
21:反應器區域
22:基板處置腔室
23:晶匣處置腔室
24:臂
26:切口
27:旋轉平台
30:旋轉平台
31:臂
32:支承表面
33:晶匣引入部分
34:可封閉開口/開口
35:晶匣搬運機器人
36:面板
37:開口
38:主軸
41:照射系統
43:管
45:電極
47:基底
49:插腳
51:紫外輻射線
53:輻射透射表面
54:控制系統
55:反射表面
56:閥
57:氣體/沖洗氣體/流體
58:流體儲存區
59:注射器系統
61:氣體入口
63:氣體出口
65:處理管
67:管外部
69:陽極
71:陰極
73:陽極電漿
75:陽極區電漿
77:陰極電漿
79:感應線圈
91:輻射源
93:輻射源
95:箭頭
97:能量控制器
應理解，圖式中之元件係為簡單及清楚起見而展示且未必按依比例繪製。舉例而言，可相對於其他元件將圖式中的元件中之一些之尺寸擴大以幫助改良對所說明之本發明之實施例的理解。
〔圖1〕係根據本發明之一實施例說明且部分顯露地展示用於照射系統之裝置透視圖；〔圖2〕係根據本發明之一圖1說明裝置之平面圖；〔圖3〕係根據本發明之一實施例說明基板托架之截面圖及其中基板使用照射系統照射；〔圖4a〕係根據本發明之一實施例說明以一螺旋形式形成之照射系統之示意圖；〔圖4b〕係根據本發明之一實施例說明用於照射系統中之氣體放電燈之部分示意圖； 〔圖5a、5b及5c〕係根據本發明之一實施例說明此照射裝置發射輻射之示意圖；〔圖6a、6b及6c〕係根據本發明之進一步之實施例說明此照射裝置發射輻射之示意圖；〔圖7a及7b〕係根據本發明之其他實施例說明此照射裝置發射輻射之示意圖；〔圖8a、8b及8c〕係根據本發明之另一實施例說明此裝置包含照射系統之示意圖；〔圖9〕係根據本發明之進一步之實施例說明此照射系統之示意圖；〔圖10〕係根據本發明之進一步之實施例說明此基板處理裝置包含照射系統之示意圖；〔圖11〕係根據圖10說明在裝置中使用照射系統所產生問題之示意圖；以及〔圖12〕係根據圖11說明問題解答之示意圖。
儘管在下文中揭示特定實施例及實例，但彼等熟悉本技藝者應理解，本發明延伸超出本發明所具體揭示之實施例及/或用途及其明顯修改及其等效物。因此，應理解所揭示之本發明範疇不應受限於下文所描述之特定揭露的實施例。
圖1及圖2係根據本發明之一實施例可說明使用照射系統之一裝置1。此裝置1可包含外殼2且一般而言可部分或完全地裝設於所謂的「無塵室」中。除外殼2外，亦可存在隔板3、4及5，可特定地見於圖2。外殼2與隔板3一起限定反應器區域21。基板處置腔室22可限定於外殼2與隔板3、4之間。晶 匣處置腔室23可限定於隔板4及5與外殼2之間。設備1可進一步包含晶匣引導部分33。
兩反應器腔室6、7，可經安配於反應器區域21，然而，也可使用單一反應器腔室。此等反應器腔室經垂直定位，且由12指示之填充有基板13之基板托架可自下方在垂直方向中移入至反應器腔室6、7中。為達此目的，每一反應器腔室可具有托架處置器，此托架處置器包含可藉由軸38在垂直方向移動之插入臂14。圖1只能看到單一插入臂14；然而應具有兩插入臂14在此裝置的兩邊。
基板托架12係設置於具有未更詳細指示之絕緣插塞的底部，絕緣插塞提供相對於爐之密封。反應器腔室可以為爐且可與加熱器一起設置以加熱基板。
托架處置器可進一步包含配置於反應區域21中之旋轉平台11，其設置有切口15。此等切口15經塑形使得若切口15已到達正確位置，則臂14能夠向上及向下移動穿過切口。另一方面，基板托架之底部之直徑可使得此直徑大於平台11中之切口15，使得當臂14自如圖1所示中之位置向下移動時，基板托架12可置放於旋轉平台11上且可在反向操作中再次自其移除。
基板托架12可藉由托架處置器同時饋送至反應器腔室6及反應器腔室7。有可能執行連續處理。亦有可能允許基板托架12之並行群組經由反應器腔室6排他地處理及經由反應器腔室7排他地處理。該等基板托架12可設置有基板13。
基板13可供應於(輸送)晶匣10中，該晶匣可憑藉晶匣搬運機器人35之臂31自晶匣引入部分33穿過可封閉開口34置放於儲存區8中。臂31可設置有支承表面32，該表面之尺寸稍小於旋轉平台27中之一系列切口26的彼等尺寸。數個此類旋轉平台在垂直方向以一個在另一個上方之方式設置於儲存區8 中。臂31可藉由晶匣搬運機器人35在垂直方向移動。臂31經安裝使得該臂不僅能夠將晶匣自引入部分33拾取或移除至儲存區8或將晶匣自儲存區8拾取或移除至引入部分33，而且使其可能將晶匣自儲存區8移動至旋轉平台30或將晶匣自旋轉平台30移動至儲存區8。
此旋轉平台30經建構使得在旋轉後，晶匣置放成與已形成有開口37之隔板4相抵，使得在打開晶匣之後，可藉基板處置器之臂24自所關注晶匣中逐個地獲取基板且可將其置放於位於基板處置腔室22中之基板托架12中。該基板托架12藉由係托架處置器之部分且在末端處具有支承表面17的鉸接臂16支撐，該表面之尺寸稍小於旋轉平台11之切口15的彼等尺寸。此臂16能夠藉由對旋轉點18作旋轉來將基板托架移動穿過隔板3中之可封閉開口。封閉件經設置以便能夠封閉反應區域21與基板處置腔室22之間的開口19。
操作者或自動晶匣輸送系統(未圖示)可藉由引入在引入部分33上之數個晶匣來裝載儲存區8。控制操作可在面板36上進行。晶匣10可藉臂31自引入部分33轉移至儲存區8中之針對此等晶匣而形成的儲存隔間9中。藉由從用於透過開口34從部分33移除相關晶匣10之最低位置開始，此晶匣可藉由晶匣搬運機器人35向上移動以移動至儲存區8之較高隔間9中。藉由旋轉儲存區8，有可能用晶匣10填充各種隔間9。
所關注之晶匣10可藉由臂31自儲存區移除且置放於旋轉平台30上。晶匣在旋轉平台30上旋轉且置放成其門與隔板4相抵。該晶匣之門可藉由開門器移除。藉由臂24，基板可按逐基板之方式一個接一個地移除且藉由基板處置器置放於基板托架12中，而基板托架置放於擺動臂16上。
在此過渡期間，旋轉平台11可在反應器區域21中以對存在於反應器區域21內部之基板進行處理之最佳方式來移動。在基板托架12已填入基板處置腔室22中且可變得可用於反應器腔室6、7中之一者之後，直至此時仍封閉 之開口19被開放且此新已填充基板托架12可置放於旋轉平台11上。此旋轉平台11可接著移動一個位置，且已填充基板托架12可藉由插入臂14之幫助從平台11移除至反應器腔室6、7中。成品托架中之已處理基板可在該經填充平台11上下降。該等基板執行與以上相反之移動以結束於晶匣中。
具有新基板之基板托架12可由插入臂14饋送至反應器腔室6、7並可在此腔室中處理。有可能在反應器腔室6、7中執行連續處理。如圖所繪示，此裝置可具有兩個反應器腔室6、7，但此裝置也可具有單一反應器腔室或三或多反應器腔室而不超出本發明之範疇。
此處理可包含以加熱器升高基板托架12中基板的溫度。因此，準確地控制基板溫度以使基板在處理開始之前達到所要的溫度來得到好的生產率係重要的。進一步地此基板可包含溫度敏感性之特性且因此溫度可限制至特定之最大值以避免損害彼等敏感特性。此將導致矛盾需求，用於反應時溫度應較高，然而基板溫度卻又須在低點以避免損壞基板上溫度敏感之特性。
該裝置可包含一照射系統，其經建構並安排以從基板托架之一側邊照射具有100奈米至500奈米之紫外輻射線至基板托架中至少一基板之一上表面。該照射系統可經建購並安排以照射具有100奈米至500奈米的紫外線，較佳地為150奈米至400奈米，甚至更佳地為170奈米至300奈米。藉由從側邊以紫外輻射線照射基板之上表面，使得提供能量至上表面做為特定處理係為可能。
此能量可增加在上表面上之反應率。此反應率之增加可加以實現而非過度加熱基板使得在基板上之基板敏感特性不會受損。反應率之增加也導致沉積層較佳的品質及/或裝置較高的生產率。此也導致以一溫度之特定處理變為可行，在此之前由於反應率為零而非可能。
圖3說明具有基板13之基板托架12之截面圖，其中基板從四側加以照射。此照射系統41可因包含四部分以從多重側照射紫外輻射至此基板1。 照射系統41可經配置以照射具有範圍為100奈米至500奈米之紫外輻射線。
照射系統41之部分可以垂直於基板表面之方向延展並延伸。照射系統41之部分可延伸擴至托架12之部分，超過托架12之全長或甚至更遠一點。照射系統之部分可具有介於50至200cm間之長度，較佳地為介於75至150cm間之長度以照射基板超過托架12之全長。
用以照射基板表面之照射系統41可具有介於5W至100kW間之功率，較佳地介於300W至20kW間，更佳地介於1W至10kW間。照射系統可具有介於50至90%間之效率，此效率為電能轉換為紫外輻射線之效率。照射系統可具有在垂直於基板方向中每公分介於0.05W至1kW間之功率輸出，較佳地為每公分介於3W至200kW間，最佳地每公分介於10至100W。基板表面可接收功率介於0.1至200mW/cm2，較佳地介於1至100mW/cm2，更佳地介於5至80mW/cm2。該照射系統可經建購並安排以照射具有100奈米至500奈米的紫外線，較佳地為150奈米至400奈米，甚至更佳地為170奈米至300奈米。托架12可具有介於50至200cm之一距離。
基板13可加以放置於基板托架12中，基板托架12可包含三個支柱，包含複數個間隔開的基板承載部，複數個間隔開的基板承載部經配置以間隔開的關係承載複數個基板。托架12可具有最大值介於50至200個間，較佳地介於100至180個間的間隔開的基板承載部沿著支柱以承載等量基板。
對理想的量產而言托架可加以填充至最大值，然而為了增加接受基板之能力，並改善基板表面所接收之輻射均勻性，托架12中基板的數量應小於最大值。舉例而言，托架可設有以間隔開的關係之10至80個基板。托架中基板間之距離可例如在5mm至200mm之間，較佳地介於20mm至140mm之間，更佳地介於40mm至100mm之間。
此支柱可以垂直基板平面之方向加以擴大或延伸。多個基板間 各基板可互相平行地放置於基板托架12上。基板托架12與照射系統41之設置使得照射系統41從基板托架12之一側邊照射紫外輻射線至基板托架中至少一基板之一上表面。如圖所示，照射系統可包含四部分以從四側照射紫外輻射線至基板。從四側之照射可改善基板接受照射之均勻性。照射系統也可具有一、二、三或四部分來照射基板表面。
紫外輻射線可透過導通來製造氣體中之電漿。在反應腔室中電漿將有助於或為處理中之不必要。若電漿為不必要，裝置可經建構或安排以在反應腔室6中抑制電漿。裝置亦可經建構或安排以阻礙電漿蔓延至反應腔室6。舉例而言，藉由提供電漿屏障至裝置，例如導電佈線或圖佈，電將可在其到達腔室之前被抑制或被阻礙。也可提供程式至裝置，當啟動裝置時選擇氣體、壓力範圍及/或功率範圍使得產生於腔室6內部之電漿可被抑制。
圖4a說明照射系統41以一螺旋形成形成，係用來照射基板之上表面。螺旋形照射系統可加以配置以圍繞具有基板13之基板托架12。照射系統41可為氣體放電燈。
圖4b說明氣體放電燈之一部分。氣筒放電燈藉由透過離子氣體在兩電極中放電來產生輻射，例如在管43中之電漿。此燈可使用惰性氣體例如氬、氖、氪以及氙，或混合以上所述，且可增添汞、鈉及金屬鹵化物於管43中混合。藉由在兩電極間施加電場使電子強制離開靠近陽極之氣體原子，其中只有一電極45有所繪示，使電子離開這些原子正離子化。陽離子流至陰極，而自由電子流至陽極。離子將與中性氣體原子碰撞，而傳輸其電子至離子上。這些在碰撞過程失去電子之原子，離子化並加速前往陰極，而在碰撞過程中增益電子之離子，回到較低能階而以輻射的方式釋放能量，係以射向基板上表面之方向來傳遞其能量至上表面。電極45係裝設於連接至管43之一基底47上，並具有插腳49以提供能量至電極45。
圖5a至5c係根據本發明之一實施例繪示傳輸輻射之一照射系統。在圖5a中，說明配置於反應腔室6中照射系統41之俯視圖。在圖5b中，說明圖5a之照射系統41之放大俯視圖。照射系統41具有一輻射透射表面53及一反射表面55以將紫外輻射線51導引至基板。輻射透射表面53可為圖4中放電燈之管43之一部分。
在輻射透射表面53及反射表面55之間加以提供一氣體57(可見於圖5c，為圖5a照射系統41之側視圖)。此裝置可加以提供一沖洗系統用以在反應腔室中以一沖洗氣體57沖洗輻射透射或反射表面53、55。沖洗氣體可建立氣流通過照射系統41流向輻射51傳輸之開口。通過照射系統41，沖洗系統可具有用以控制一閥56之一控制系統54以在反應腔室6中提供來自流體儲存區58之沖洗氣體。
氣體流動可反制由來自反應腔室6的氣體所造成在輻射透射或反射表面53、55上任何汙染物或沉積。此污染物或沉積可能因輻射透射表面53而惡化輻射傳輸，或因反射表面55而惡化輻射反射。在此方式中，包含輻射透射及/或反射表面的照射系統41可部分地設置於反應腔室內。
裝置可設有至少一注射器。此注射器可設於反應腔室中以提供流體至反應腔室。沖洗或處理氣體可透過此注射器所提供。在一選項中照射系統41可經建構並安配一注射器以透過此注射器提供輻射及/或沖洗或處理氣體至基板。此方式可如類似於圖5a所示之方式達成於圖5c。
此處理氣體可加以選擇使其適用於在反應腔室6中時反應，而在注射器中不反應。反則將導致因輻射透射表面53而惡化輻射透射或因反射表面41而惡化輻射反射。舉例而言，處理氣體可為第一前體與另一第二前體反應，但若無其他前體則不反應。
具有照射系統之此裝置，可設有一流體系統，其包含用以控制 一閥56之一控制系統54以在反應腔室提供在反應腔室中例如處理或沖洗氣體之流體。此流體可儲存於流體儲存區58或可從氣體管線所接收。控制系統及閥56可經建構並安排以搭配儲存於流體儲存區58中第一及/或第二前體執行在基板上原子層沉積(ALD)或化學氣相沉積(CVD)循環。
圖6a-6c係根據一進一步之實施例說明一照射系統傳輸輻射。在圖6a中，說明配置在反應腔室6中之照射系統41之俯視圖。在圖6b及6c中，說明圖6a之照射系統41之側面放大圖。照射系統41具有一輻射透射表面53以導引紫外輻射線朝向基板。輻射透射表面53可為圖4中放電燈之管43之一部分。
輻射透射表面53可具有一流體57。流體57可為一沖洗氣體或一處理氣體。裝置可具有沖洗系統，用以在反應腔室6中以沖洗或處理氣體之氣流沖洗輻射透射表面53。不論是沖洗氣體或處理氣體之氣流，可阻卻在輻射透射表面上來自反應腔室6氣體所造成之任何汙染物或沉積物。此污染物或沉積可惡化藉由輻射透射表面53之輻射傳輸。在此方式中，包含輻射透射表面53的照射系統41可部分地設置於反應腔室6內。
具有照射系統之此裝置可具有一流體系統。此流體系統可包含一流體控制系統54用以控制閥56以在反應腔室6中提供例如為處理或沖洗氣體之流體。此流體可加以儲存於流體儲存區58或來自於氣體管線。
紫外輻射線能加以用於沉積、增濃、原子層沉積(ALD)、化學氣相沉積(CVD)或其他層。舉例而言當矽或氮化矽之層沉積於反應腔室內，沉積物質的厚度增加於輻射透射表面之上部紫外輻射系統之效率可能因吸收而減少。沖洗輻射透射表面可某種程度上減弱此狀況。
一互補定期性的以蝕刻氣體原位清洗有其需要性以清潔輻射透射或反射表面53、54。裝置可包含蝕刻系統。蝕刻系統可包含一流體儲存區58、一控制系統54及一閥56。控制系統54可具有一程式，在層沉積於輻射透射 表面或反射表面後，啟動控制系統以改善輻射透射或反射表面之透射率。
蝕刻流體可儲存於蝕刻系統之流體儲存區58。控制系統54可控制閥56以提供在反應腔室6中蝕刻流體。控制系統可控制閥56以提供蝕刻流體，意即，在反應腔室中之蝕刻係為了蝕刻沉積於輻射透射53或反射表面之層以增進表面之透射率。
蝕刻氣體可為氯(Cl2)、氯化鋇(BCl3)、氯化氫(HCl)、四氟甲烷(CF4)、三氟化氮(NF3)、溴化氫(HBr)、六氟化硫(SF6)，或為與一氫氣或氧氣組合由紫外輻射線所創造包含像是氫氣或氧氣等氣體之灰化成分。以蝕刻氣體定期的原位清洗也可簡化本裝置之設計來替代沖洗輻射透射或反射表面。
可藉由在氧化環境中的熱處理定期轉換矽或氮化矽層至二氧化矽，再次使得輻射透射表面53或反射表面55可透射或可反射。此裝置可包含一轉換系統。轉換系統可包含流體儲存區58、控制系統54及閥56。控制系統54可具有一程式，在層沉積於輻射透射表面或反射表面後，啟動控制系統以改善輻射透射或反射表面之透射率。
氧氣包含流體例如，舉例而言，氧氣(O2)、臭氧(O3)、過氧化氫(H2O2)、水(H2O)或氧化亞氮(N2O)，可做為目的儲存於流體儲存區58.。控制系統54可控制閥56以提供在反應腔室6中來自流體儲存區之氧化流體並控制反應腔室之加熱。在轉換矽或氮化矽層至二氧化矽後，二氧化矽可透射UV且並不需原位清理。以氧化氣體定期的原位轉換也可簡化本裝置之設計來替代沖洗輻射透射或反射表面。
圖7a-7b係根據本發明之進一步實施例說明透射輻射之照射系統。在圖7a中，為配置於反應腔室6之一注射器系統59之俯視圖。在圖7b中，為圖7a之注射器系統59之放大側視圖。注射器系統59具有一氣體入口61、氣體出口63及照射系統41。照射系統41具有輻射透射表面53以導引紫外輻射線朝向 注射器系統59中之氣體。
可透過注射器系統59提供處理氣體。來自照射系統41之UV輻射之能量可在注射器系統中活化處理氣體使得若其離開注射器系統通過氣體出口63能與基板在反應腔室6中反應。處理氣體之反應度可以此方式增加以改進在反應腔室6中基板的反應度。
圖8a至圖8c係根據本發明之進一步實施例說明包含一照射系統之裝置。反應腔室6、7可由一處理管65所限制，其對於反應腔室中之處理氣體形成一屏障。處理管可(或部分地)以一輻射透射表面作用。照射系統可設於反應腔室之外，並可建構或安排以透過處理管65之輻射透射表面照射紫外輻射線至反應腔室。
照射系統41可經建構並安排以從電漿創造介於處理管65與管外部67之間之輻射。照射系統41可經建構並安排以藉由系統創造電漿，此系統包含電漿氣體供應系統，以提供處理管65與管外部67之間用於電漿之氣體。在此目的下惰性氣體例如氬、氖、氪、氙可提供於處理管65與管外部67之間，在此目的下鈉與汞也可提供於處理管65與管外部67之間，圖8a說明照射系統41可包含一陽極69與一陰極71，其經建構並安排以創造介於處理管65與管外部67間之電漿。電漿可創造具有範圍從100至500奈米之紫外輻射線。根據本發明之進一步實施例，紫外輻射線可照射置於處理管65中之至少一基板之上表面。
圖8b揭露不同電漿可創造於陽極69與陰極71之間。接近陽極為陽極電漿73，接近陰極71為陰極電漿77。陽極區電漿75可使用於基板之照射。
圖8c根據本發明進一步實施例說明照射系統41可具有感應裝置，舉例而言，感應線圈79，可經建構並安排以創造在處理管65與管外部67間之電漿。電漿可創造具有範圍從100至500奈米之紫外輻射線。該照射系統可經 建購並安排以照射具有100奈米至500奈米的紫外線，較佳地為150奈米至400奈米，甚至更佳地為170奈米至300奈米。紫外輻射線可照射置於處理管65中之至少一基板之上表面。感應線圈也可用來加熱反應腔室。
紫外輻射線能加以用於沉積、增濃、原子層沉積(ALD)、化學氣相沉積(CVD)或其他層。當層沉積於反應腔室內，沉積物質的厚度增加於處理管65之內部輻射透射表面之上部，紫外輻射系統之效率可能因吸收而大幅度減少。
以蝕刻氣體原位清理有所需求以清理輻射透射表面。此裝置因此可包含一蝕刻系統。如圖6所示，蝕刻系統可包含一流體儲存區58、一控制系統54及一閥56，以提供一蝕刻流體，意即在反應腔室6中之蝕刻係為了蝕刻沉積於處理管65之層以增進處理管之透射率。
可藉由在氧化環境中的熱處理轉換在處理管之矽或氮化矽層至二氧化矽，再次使得輻射透射表面可透射。氧化環境可包含，舉例而言，氧氣(O2)、臭氧(O3)、過氧化氫(H2O2)、水(H2O)或氧化亞氮(N2O).。二氧化矽(SiO2)可透射UV且並不需原位清理。
此裝置可因此包含一轉換系統。轉換系統可包含流體儲存區58、控制系統54及閥56。控制系統54可控制閥56以提供來自流體儲存區在反應腔室6中的氧化流體並控制反應腔室6之加熱。在轉換處理管65中的矽或氮化矽至二氧化矽後，二氧化矽可透射UV且並不需原位清理。
圖9係根據本發明之進一步實施例說明照射系統。照射系統41包含個別可控制輻射源，舉例而言，發光二極體，以控制用於以垂直方向沿著基板堆疊個別地從側面照射基板13之輸出能量。以基板13之方向用於發射輻射光束之照射系統41，可放置於托架12之側面。照射系統41可從側面向下照射輻射光束至基板13之上表面。在此照射系統41僅照射托架12之上部分，然而實際上 照射系統可衍伸超過托架12之全長。
輻射光束相對於垂直於基板13之表面之線的角度可在60°與90°之間，較佳在80°與89.5°之間，且甚至更佳在85°與89°之間。照射系統41之輻射光束可輕微地平行。照射系統之輻射光束之方向因此可定義為由照射系統41所發射之輻射之平均方向。
此裝置可包含反射器(未顯示於圖)，位於相對於照射系統41之基板托架之其他側，以反射基板13反射回到基板表面之輻射。反射器可係回反射器以在與輻射光束來自之方向相同的方向將輻射光束反射回。此反射器可包含一從物質群所選之物質，包含玻璃、鋼、鋁或聚四氟乙烯(PTFE)，以導引輻射之基板。
反射器可設置有偏光片以將反射光之偏振改變90度以改良對反射光之吸收。偏光片可係位於反射器前方且厚度為波長之1/8的薄板。
照射系統可具有個別可控制輻射源91、93之第一及第二群。個別可控制輻射源之第一群91可經指向至基板13之表面而更遠離邊緣，並相對於個別可控制輻射源之第二群93經指向至靠近基板13之邊緣的上表面。於基板表面之輻射強度均勻度可以此方式增加。若於基板表面之輻射強度係均勻，由照射系統41於基板表面之反應度增加將同樣有助於處理控制。
如圖所示，照射系統41可直接地照射基板13，然而反應腔室也可由位於照射系統與基板13間之處理管所限制(以65顯示於圖8)。處理管對於處理氣體可形成一屏障並至少部分地作用於輻射透射表面。照射系統41可設於反應腔室外並經建構及安排以透過輻射透射表面照射紫外輻射線至反應腔室。處理管可保護照射系統41免於減溫且沉積產物提供於反應腔室。
圖10根據本發明之進一步實施例說明用於處理包含照射系統之基板之裝置。若照射系統從一側設置，只有一部分的基板13可被直接照射。此 裝置可具有旋轉裝置以箭頭95所繪示之方向旋轉基板，在此可保證基板13被均勻地照射。
基板托架12可設置於具有絕緣插塞之底部處，當托架12在反應腔室6、7(可見於圖1及2)中向上移動提供相對於反應腔室6、7之密封。為增加照射系統41的照射平均度，絕緣插塞可設置一(架)旋轉裝置以沿著垂直軸旋轉托架12與基板13。托架旋轉裝置可由所知美國專利號US 9,018,567 B2在此結合以做為參考。於基板表面之輻射強度均勻度可以此方式增加。若於基板表面之輻射強度係均勻，由照射系統41於基板表面之反應度增加將同樣有助於處理控制。
圖11說明在裝置中使用照射系統41以照射基板13以及(架)旋轉裝置沿著垂直軸旋轉托架12與基板13所產生問題。照射系統41之輻射可能過度照射或加熱基板托架之部分12a。輻射可能從基板托架12透過反應腔室6周圍散射，而照射裝置之部分不想被照射的地方。
圖12根據本發明之進一步實施例說明一照射系統，解決在圖11中過度照射或過度加熱基板托架之部分12a之問題。基板托架12可旋轉以達成較均勻溫度分佈且避開過度加熱。
另外，從控制系統可取得基板托架12之形狀及托架12之旋轉位置的資訊可用來關閉或限制照射系統41之部分之能量，此將針對托架12之前述部分12a。減少量的輻射可因此由基板托架12之部分12a收容，且較少輻射可自經加熱基板托架12經由支撐構件之環境散射以對裝置之並不欲被加熱的部分加熱。
裝置可包含一能量控制器97以控制照射系統41之能量且此能量控制器可程式化以調整照射系統41沿著基板托架寬度輸出之輻射以避免過度加熱基板托架。
所展示且描述之特定實施方案係對本發明及其最佳模式之說明且並不意欲以任何方式另外限制態樣及實施之範圍。實際上，為簡潔起見，系統之習知製造、連接、製備及其他功能性態樣可不加以詳細描述。此外，各種圖中展示之連接線意欲表示各種元件之間的例示性功能性關係及/或實體耦合。許多替代或附加功能關係或實體連接可存在於實際系統中及/或在一些實施例中可不存在。
應理解，本文中所述之組態及/或方法本質上為例示性的，且此等特定具體例或實施例不視為具有限制意義，原因在於可能存在諸多變化。本文中所描述之特定程序或方法可表示任何數目的處理程序策略中之一或多者。因此，所說明之各種動作可以所說明之順序、以其他順序進行或在一些情況下被省略。
本發明之標的包括各種製程、系統及組態及本文中所揭示之其他特徵、動作、作用及/或特性及其任何及所有等效者的所有新穎的且非顯而易見的組合及子組合。
1:裝置
2:外殼
6:反應器腔室
7:反應器腔室
8:儲存區
9:儲存隔間/隔間
10:晶匣
11:旋轉平台/平台
12:基板托架
13:基板
14:插入臂/臂
15:切口
16:鉸接臂/臂/擺臂
17:支承表面
27:旋轉平台
35:晶匣搬運機器人
36:面板

Claims (23)

  1. 一種基板處理裝置，其包含：一反應腔室；以及一基板托架，用於在該反應腔室中提供複數個基板，該基板托架包含複數個間隔開的基板承載部，該複數個間隔開的基板承載部經配置以以間隔開的關係承載該複數個基板，該基板托架經建構以圍繞一軸旋轉；及一照射系統，其經建構並安排以從該基板托架之一側邊照射具有100奈米至500奈米之紫外輻射線至該基板托架中至少一基板之一上表面，其中一能量控制器經建構以基於該基板托架之形狀及該基板托架之位置之資訊進行關閉能量及限制能量中之至少一者至該照射系統之一部分，以限制在該基板托架圍繞該軸旋轉時之擊中該基板托架之輻射量。
  2. 如請求項1所述之基板處理裝置，其中該裝置包含一加熱器用以加熱該反應腔室中之該基板。
  3. 如請求項1所述之基板處理裝置，其中該照射系統經安排以從該垂直軸水平地放置。
  4. 如請求項1所述之基板處理裝置，其中該照射系統經建構及配置以自從該基板托架之一側邊以相對於垂直該基板表面之一線60度至90度間之一角度向下射出該輻射光線至基板托架承載之該基板之一上表面。
  5. 如請求項1所述之基板處理裝置，其中該照射系統設有一輻射透射或反射表面以導引該紫外輻射線至該基板。
  6. 如請求項5所述之基板處理裝置，其中該反應腔室由一處理管所限制，該處理管形成一屏障且至少部分地以該輻射透射表面作用，以及該照射系統係設於該反應腔室外部並安排以照射該紫外輻射線通過該輻射透射表面至該反應腔室。
  7. 如請求項5所述之基板處理裝置，其中該裝置設有一沖洗系統，以沖洗在反應腔室中一幅射透射或反射表面。
  8. 如請求項5所述之基板處理裝置，其中包含該輻射透射或反射表面的該照射系統係部分地設於該反應腔室中。
  9. 如請求項8所述之基板處理裝置，其中至少一注射器係設於該反應腔室中以提供一流體注入該反應腔室，且該照射系統經建構並安排以透過該注射器提供該輻射線至該基板。
  10. 如請求項9所述之基板處理裝置，其中該裝置經建構並安排以經由該注射器提供一沖洗或處理氣體。
  11. 如請求項1所述之基板處理裝置，其中該照射系統包含多重分部以從多重側邊照射紫外輻射線至該基板托架中的該基板。
  12. 如請求項1所述之基板處理裝置，其中該照射系統具有一螺旋形狀以從多重側邊照射紫外輻射線至該基板托架中的該基板。
  13. 如請求項5所述之基板處理裝置，其中至少一注射器係設於該反應腔室內以提供一流體注入於該反應腔室中，且該裝置為了在基板上沉積一層設有一控制系統，以控制在該反應腔室中提供流體之閥。
  14. 如請求項13所述之基板處理裝置，其中當該控制系統運作時該控制系統具有一程式以在該層沉積在該幅射透射或反射表面後改進該輻射透射或反射表面之透射率。
  15. 如請求項13所述之基板處理裝置，其中用以提供流體至該反應腔室之該閥連接至包含一氧化流體之一流體儲存器，且為了氧化沉積在該輻射透射或反射表面之一層以改進該層之透射率，該控制器控制該閥以提供在反應腔室中之氧化流體。
  16. 如請求項13所述之基板處理裝置，其中用以提供流體至該反應 腔室之該閥連接至包含一蝕刻流體之一流體儲存區，且為了蝕刻沉積在輻射透射或反射表面之一層以改進該表面之透射率，該層該控制器控制該閥以提供在反應腔室中之侵蝕。
  17. 一種用以在一反應腔室中處理複數個基板之方法，其包含：提供請求項1中之一基板處理裝置；提供在該基板托架中之複數個基板，該基板托架包含複數個間隔開的基板承載部，該複數個間隔開的基板承載部經配置以間隔開的關係承載該複數個基板；從該基板托架之一側邊照射具有100奈米至500奈米範圍之紫外輻射線至該反應腔室中該基板托架中之該基板；及進行關閉能量及限制能量中之至少一者至該照射系統之一部分，以限制在該基板托架圍繞該軸旋轉時之擊中該基板托架之輻射量。
  18. 如請求項17所述之方法，其中照射紫外輻射線至該基板托架中之該基板包含透過一幅射透射或反應表面導引該紫外輻射線至該基板。
  19. 如請求項17所述之方法，其中該方法包含為了在該基板上沉積一層，透過一注射器提供在該反應腔室中之一流體。
  20. 如請求項17所述之方法，其中該方法包含在該反應腔室中移動該基板托架及該基板。
  21. 如請求項19所述之方法，其中，該方法包含：提供一氧化流體於該反應腔室中；以及氧化沉積在該輻射透射或反射表面之一層以改進該層輻射透射或反射表面之穿透率。
  22. 如請求項19所述之方法，其中，該方法包含：提供一蝕刻流體於該反應腔室中；以及 蝕刻沉積在輻射穿透或反射表面之一層以改進該輻射透射或反射表面之透射率。
  23. 一種基板處理裝置，其包含：一反應腔室，該反應腔室由形成一屏障之一處理管所限制；一基板托架，可移動地置於該反應腔室用以導引在該反應腔室中的複數個基板，該基板托架包含複數個間隔開的基板承載部，該複數個間隔開的基板承載部經配置以間隔開的關係承載該複數個基板，該基板托架經建構以圍繞一軸旋轉，及一照射系統，其經建構並安排於該反應腔室外以透過該處理管從該基板托架之一側邊照射具有100至500奈米之紫外輻射線至該反應腔室及至在該基板托架中之該等基板中之至少一者之一上表面，其中一能量控制器經建構以基於該基板托架之形狀及該基板托架之位置之資訊進行關閉能量及限制能量中之至少一者至該照射系統之一部分，以限制在該基板托架圍繞該軸旋轉時之擊中該基板托架之輻射量。
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