CN110323156A - 衬底处理设备和方法 - Google Patents

衬底处理设备和方法 Download PDF

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CN110323156A
CN110323156A CN201910211553.4A CN201910211553A CN110323156A CN 110323156 A CN110323156 A CN 110323156A CN 201910211553 A CN201910211553 A CN 201910211553A CN 110323156 A CN110323156 A CN 110323156A
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substrate
reaction chamber
lighting system
substrate holder
radiation transmission
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D·皮埃罗
C·T·赫布施莱布
W·克纳彭
B·琼布洛德
S·范阿尔德
K·胡本
T·奥斯特拉肯
C·德里德
L·吉迪拉
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ASM IP Holding BV
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Abstract

本发明涉及一种衬底处理设备，其包括反应室，所述反应室被设置有用于将多个衬底固持在所述反应室中的衬底架。所述衬底架可具有多个间隔开的衬底固持装置，所述衬底固持装置被配置成固持所述多个衬底。所述设备可具有照明系统，所述照明系统被构造和布置成将具有100到500纳米的范围的辐射辐照到所述衬底的顶表面上。

Description

衬底处理设备和方法
技术领域
本发明大体上涉及一种衬底处理设备和方法。更具体地说，本发明涉及一种衬底处理设备，其包括反应室，所述反应室被设置有用于在所述反应室中引入多个衬底的衬底架，所述衬底架包括多个间隔开的衬底固持装置，所述衬底固持装置被配置成以间隔开的关系固持所述多个衬底。
背景技术
充当反应器的炉子可用作反应室以在衬底上产生精细尺寸的结构，例如集成电路。例如硅晶片的若干衬底可放置在衬底固持器上，衬底固持器是例如在反应器内部的衬底架或舟皿上。在典型的衬底处理步骤中，可加热衬底。另外，可使反应物气体越过被加热的衬底，从而致使在要处理的衬底上沉积气体的反应物材料或反应物的薄层。
衬底上的一系列处理步骤被称为配方(recipe)。如果沉积层具有与底层硅衬底相同的结晶结构，那么沉积层被称为外延层。这有时也被称为单晶层，因为其仅具有一种晶体结构。通过后续的沉积、掺杂、光刻、蚀刻和其它工艺，这些层被制成集成电路，从而生产数十到数千或甚至数百万个集成装置，这取决于衬底大小和电路复杂性。
各种工艺参数被仔细地控制以确保所得层的高质量。一个此类关键参数是在每个配方步骤期间的衬底温度。举例来说，在CVD期间，沉积气体在特定温度窗口内反应并沉积在衬底上。不同的温度会引起不同的沉积速率和质量。因此，重要的是在反应处理开始之前准确地控制衬底温度以使衬底达到期望的温度。衬底可包括对温度敏感的特征，且因此可将温度限于某个最大值以避免损坏那些敏感特征。
对于某些工艺，在的顶表面处，能量可能是必要的。如果这种能量以热的形式被提供，那么这可能会导致相抵触的要求，其中对于生产率、质量和/或反应性，温度应高，而为了避免损坏衬底上的特征，温度应保持低。
发明内容
因此，可能需要向反应室中的多个衬底的表面提供能量。
根据本发明的至少一个实施例，提供一种衬底处理设备，其包括：
反应室；以及
衬底架，其用于在所述反应室中提供多个衬底。所述衬底架可包括多个间隔开的衬底固持装置，所述衬底固持装置被配置成以间隔开的关系固持所述多个衬底。所述设备可包括照明系统，所述照明系统被构造和布置成将在100到500纳米的范围内的紫外辐射从所述衬底架的一侧辐照到所述衬底架中的所述衬底中的至少一个衬底的顶表面上。
通过用紫外辐射从所述侧辐照所述衬底的所述表面，有可能在所述顶表面上提供能量。所述照明系统可被构造和布置成辐射具有100到500、优选地是150到400且甚至更优选地是170到300纳米的范围的紫外辐射。所述衬底架可移动到所述反应室中。
根据本发明的另一实施例，提供一种衬底处理方法，其包括：
在衬底架中提供多个衬底，所述衬底架包括多个间隔开的衬底固持装置，所述衬底固持装置被配置成以间隔开的关系固持所述多个衬底；以及，
将在100到500纳米的范围内的紫外辐射从所述衬底架的一侧辐照到所述反应室中的所述衬底架中的所述衬底。
出于概述本发明和优于现有技术而实现的优势的目的，上文中描述了本发明的某些目标和优势。当然，应理解，未必所有此类目标或优势都可根据本发明的任一特定实施例实现。因此，举例来说，所属领域的技术人员将认识到，本发明可以按实现或优化如本文中所教示或建议的一种优势或一组优势，但不一定实现如本文中可能教示或建议的其它目的或优势的方式来实施或进行。
所有这些实施例意图在本文中所公开的本发明的范围内。对于所属领域的技术人员来说，这些和其它实施例将从参考附图的某些实施例的以下详细描述变得显而易见，本发明不受限于所公开的任何特定实施例。
附图说明
应了解，图中的元件仅为简单和清晰起见而进行绘示，且不一定按比例绘制。举例来说，图中的一些元件的尺寸可能相对于其它元件放大，以有助于改进对本公开所说明实施例的理解。
图1示意性地且部分暴露地示出根据实施例的用于照明系统的应用的设备的透视图；
图2示意性地示出根据图1的设备的平面图；
图3示出根据实施例的具有用照明系统照明的衬底的衬底架的横截面；
图4a示出根据实施例的以螺旋形式形成的照明系统；
图4b描绘根据实施例的用于照明系统中的气体放电灯的部分；
图5a、5b和5c描绘根据实施例的透射辐射的照明系统；
图6a、6b和6c描绘根据另一实施例的透射辐射的照明系统；
图7a和7b描绘根据又一实施例的透射辐射的照明系统；
图8a、8b和8c描绘根据另外实施例的包括照明系统的设备；
图9描绘根据另一实施例的照明系统；
图10描绘根据另一实施例的包括照明系统的衬底处理设备；
图11描绘根据图10的使用照明系统的设备中可能出现的问题；以及，
图12描绘图11的问题的解决方案。
具体实施方式
尽管下文公开了某些实施例和实例，但所属领域的技术人员将理解，本发明延伸超出了本发明具体公开的实施例和/或用途以及显而易见的修改及其等效物。因此，希望本发明所公开的范围不应受下文所描述的特定公开实施例的限制。
可在图1和2中指示根据实施例的用于使用照明系统的设备1。所述设备1可包括外壳2，且通常可部分地或完全地安装在所谓的“洁净室”中。除了外壳2之外，还可存在隔板3、4和5，特别是从图2中可看出。外壳2可与隔板3一起界定反应器区域21。衬底处置室22可界定在外壳2与隔板3、4之间。盒处置室23可界定在隔板4和5与外壳2之间。设备1可进一步包括盒引入部分33。
两个反应器室6、7可布置在反应器区域21中，然而，也可使用单个反应器室。所述反应器室可竖直地放置，且被填充有衬底13的由12指示的衬底架可从下方在竖直方向上移动到反应器室6、7中。为此目的，每个反应器室可具有架处置器，架处置器包括插入臂14，插入臂14可借助于主轴38在竖直方向上移动。在图1的图式中仅可看见一个插入臂14；然而，设备的两侧上可存在两个插入臂14。
衬底架12可在底部处被设置有绝缘塞，绝缘塞未被更详细地指示，其相对于反应器室提供密封。反应器室可被称为炉子并可被设置有加热衬底的加热器。
架处置器还可包括布置在反应区域21中的被设置有切口15的旋转式平台11。所述切口15可被成形为使得如果切口15已达到正确的位置，那么臂14能够向上和向下移动通过所述切口。另一方面，衬底架的底部的直径可使得所述直径大于平台11中的切口15，使得当臂14从图1所示出的位置向下移动时，衬底架12可放置在旋转式平台11上并可在反向操作中再次从其中移除。
衬底架12可以用架处置器被馈送到反应器室6和7两者。有可能在其中执行连续的处理。还有可能允许平行的多组衬底架12仅由反应器室6处理以及仅由反应器室7处理。所述衬底架12可被设置有衬底13。
衬底13可被供应在盒10中(传送盒10)，盒10可从盒引入部分33借助于盒处置机器人35的臂31通过可闭合开口34放置在存储区8中。臂31可被设置有支承表面32，支承表面32的尺寸略小于旋转式平台27中的一系列切口26的尺寸。多个此类旋转式平台可在存储区8中在竖直方向上被设置成一个位于另一个之上。臂31可借助于盒处置机器人35在竖直方向上移动。臂31可被装配成使得所述臂不仅能够将盒从引入部分33拾取到存储区8或将盒从存储区8移除到引入部分33，而且能够使有可能将盒从存储区8移动到旋转式平台30或从旋转式平台30移动到存储区8。
所述旋转式平台30可被构造成使得在旋转时将盒放置成抵靠隔板4，在隔板4中已形成开口37，使得在打开盒之后，可借助于衬底处置器的臂24从所关注的盒中一个接一个地取出衬底，并可将衬底放置在位于衬底处置室22中的衬底架12中。所述衬底架12由铰接臂16支撑，铰接臂16是架处置器的部分并在端部处被设置有支承表面17，支承表面17的尺寸略小于旋转式平台11的切口15的尺寸。所述臂16可能够通过围绕旋转点18旋转而与衬底架一起移动通过隔板3中的可闭合开口。可提供闭合件，以便能够闭合反应区域21与衬底处置室22之间的开口19。
操作员或自动化盒传送系统(未示出)可通过在引入部分33上引入多个盒来装载存储区8。可在面板36上完成控制操作。盒10可借助于臂31从引入部分33转移到为存储区8中的这些盒制成的存储隔室9中。通过从用于通过开口34从部分33移除相关盒10的最低位置开始，所述盒可向上移动，以用于由盒处置机器人35移动到存储区8的较高隔室9中。通过存储区8的旋转，有可能用盒10填充各个隔室9。
所关注的盒10可由臂31从存储区移除并放置在旋转式平台30上。盒在旋转式平台30上旋转，并被放置成使得其门抵靠隔板4。盒的门可以用开门器被移除。借助于臂24，衬底可被逐个衬底地移除并放置在衬底架12中，衬底架12与衬底处置器一起放置在摆动臂16上。
与此同时，旋转式平台11可能够以关于将对存在于反应器区域21内部的衬底进行的处理的最佳方式在反应器区域21中移动。在衬底处置室22中已填充衬底架12并可以使衬底架12可用于反应器室6、7中的一个反应器室之后，打开到此时一直闭合的开口19，且可将所述新近所填充的衬底架12放置在旋转式平台11上。然后，所述旋转式平台11可移动一个位置，且可借助于插入臂14将所填充的衬底架12从平台11移除到反应器室6、7中。可在所述所填充的平台11上降低成品架中的所处理的衬底。所述衬底执行与上述移动相反的移动以最终进入盒中。
具有新近的衬底的衬底架12可以用插入臂14被馈送到反应器室6或7，并可在所述室中被处理。有可能在反应器室6、7中执行连续的处理。如所描绘，设备可具有两个反应器室6、7，但设备也可具有一个反应器室或三个或更多个反应器室，而不脱离本发明的范围。
处理可包括用加热器增加衬底架12中的衬底温度。重要的是在处理开始之前准确地控制衬底温度以使衬底达到期望的温度以得到适当的生产率。另外，衬底可包括对温度敏感的特征，且因此可将温度限于某个最大值以避免损坏那些敏感特征。这可能会导致相抵触的要求，其中对于反应性，衬底的温度可能高，而衬底的温度可能低以避免损坏衬底上的温度敏感特征。
所述设备可包括照明系统，所述照明系统被构造和布置成将在100到500纳米的范围内的紫外辐射从所述衬底架的一侧辐照到所述衬底架中的所述衬底中的至少一个衬底的顶表面上。所述照明系统可被构造和布置成辐射具有100到500、优选地是150到400且甚至更优选地是170到300纳米的范围的紫外辐射。通过用紫外辐射从所述侧辐照所述衬底的顶表面，对于某些工艺有可能向所述顶表面提供能量。
所述能量可增加顶表面上的反应性。可在不使衬底过热而使得衬底上的温度敏感特征可能不会被损坏的同时实现此反应性增加。反应性增加可能会引起沉积层的较好质量和/或设备的较高生产率。它还可能会使得某些工艺在之前由于反应性为零而不可能的温度下变得可能。
图3示出具有从四个侧照明的衬底13的衬底架12的横截面。照明系统41可因此包括四个部分以将紫外辐射从多个侧辐照到衬底13。照明系统41可被配置成辐照在100到500纳米的范围内的紫外辐射。
照明系统41的部分可细长并在垂直于衬底表面的方向上延伸。照明系统41的部分可遍及架12的部分而延伸，遍及架12的整个长度而延伸，或甚至更进一步延伸。照明系统的部分可具有介于50与200cm之间、优选地介于75与150cm之间的长度，以遍及架12的整个长度照明衬底。
用于照明衬底表面的照明系统41可具有介于5W与100kW之间、优选地介于300W与20kW之间且甚至更优选地介于1与10kW之间的功率。照明系统可在电能转化为紫外辐射时具有介于50％与90％之间的效率。照明系统可在垂直于衬底的方向上具有每厘米介于0.05W与1kW之间、优选地是每厘米介于3与200W之间且最优选地是每厘米介于10与100W之间的功率输出。衬底表面可接收介于0.1与200毫瓦(mW)/cm2之间、优选地介于1与100mw/cm2之间且甚至更优选地介于5与80mW/cm2之间的功率。所述照明系统可被构造和布置成辐射具有100到500、优选地是150到400且甚至更优选地是170到300纳米的范围的紫外辐射。架12可具有介于50与200cm之间的距离。
衬底13可定位在衬底架12中，衬底架12可包括三个支柱，三个支柱包括被配置成以间隔开的关系固持多个衬底13的多个间隔开的衬底固持装置。架12可沿着支柱具有最大值介于50与200个之间、优选地介于100与180个之间的间隔开的衬底固持装置以用于固持相等量的衬底。
为了最佳生产，可将架填充到最大值，然而，为了增加在衬底上接收到的功率并改进遍及衬底的表面接收到的辐射的均匀性，可使架12中的衬底的数目低于最大值。举例来说，架可被设置有呈间隔开的关系的10到80个衬底。在此类状况下，架中的衬底之间的距离可介于5到200之间、优选地介于20到140之间且最优选地介于40mm到100mm之间。
支柱可细长并在垂直于衬底表面的方向上延伸。多个衬底可彼此平行地定位在衬底架12中。衬底架12和照明系统41的配置致使照明41将紫外辐射从衬底架12的一侧辐照到衬底架中的衬底中的至少一个衬底的顶表面上。如所描绘，照明系统可包括四个部分以将紫外辐射从四个侧辐照到衬底。从四个侧照明可改进在衬底上接收到的照明的均匀性。照明系统还可具有照明衬底表面的一个、两个、三个或四个部分。
紫外辐射可在其可穿过的气体中产生等离子体。等离子体可能对于正在反应室中运行的工艺是有帮助的或无用的。如果等离子体是无用的，那么设备可被构造和布置成在反应室6中抑制等离子体。设备还可被构造和布置成阻碍等离子体传播到反应室6中。举例来说，通过向设备提供等离子体屏蔽，例如导电布线或涂层，等离子体可在其到达反应室之前被抑制或阻碍。设备还可被提供程序，程序在设备上运行时选择气体、压力范围和/或功率范围，使得可抑制在反应室6的内部中产生等离子体。
图4a示出可用于照明衬底的顶表面的以螺旋形式形成的照明系统41。螺旋形成的照明系统可被配置成环绕具有衬底13的衬底架12。照明系统41可以是气体放电灯。
图4b描绘为气体放电灯的部分。气体放电灯通过在两个电极之间通过离子化气体进行放电而生成辐射，离子化气体是例如管43中的等离子体。此类灯可使用例如氩气、氖气、氪气和氙气的稀有气体或其混合物，并另外甚至可在管43中的混合物中使用汞、钠和金属卤化物。可通过在仅一个电极45被描绘的两个电极之间施加的电场迫使电子在阳极附近留下气体的原子，从而使这些原子正离子化。自由电子流动到阳极，而阳离子流动到阴极。离子可与中性气体原子碰撞，中性气体原子将其电子转移到离子。在碰撞期间已失去电子的原子离子化并朝向阴极加速，而在碰撞期间已取得电子的离子返回到较低能态，同时以在衬底的衬底顶表面的方向上发射的辐射的形式释放能量，以将其能量转移到顶表面中。电极45装配在基座47，基座47连接到管43且被设置有引脚49以向电极45提供电力。
图5a到5c描绘根据实施例的透射辐射的照明系统。在图5a中，示出了配置在反应室6中的照明系统41的俯视图。在图5b中，示出了图5a的照明系统41的放大俯视图。照明系统41被设置有辐射透射表面53和反射表面55以朝向衬底导引紫外辐射51。辐射透射表面53可以是图4的放电灯的管43的部分。
在辐射透射表面53与反射表面55之间，可提供气体57(参见图5c，其是图5a的照明系统41的侧视图)。设备可被设置有净化系统以用于用净化气体57净化反应室中的辐射透射或反射表面53、55。净化气体可产生通过照明系统41朝向开口的气流，辐射51通过所述开口被透射。净化系统可被设置有控制系统54以用于控制阀56，以经由照明系统41从流体存储装置58在反应室6中提供净化气体。
气流可抵消由来自反应室6的气体在辐射透射或反射表面53、55上造成的任何污染或沉积。此类污染或沉积可能会使辐射透射表面53的辐射透射或反射表面55的反射劣化。以此方式，包括辐射透射和/或反射表面的照明系统41可部分地设置在反应室内。
设备可被设置有至少一个喷射器。喷射器可设置在反应室内以用于将流体提供到反应室中。可通过喷射器提供净化或处理气体。任选地，照明系统41可被构造和布置在喷射器中以通过喷射器将辐射和或净化或处理气体提供到衬底。这可以如图5a到5c中所描绘的类似方式完成。
可选择处理气体，使得其在施加于反应室6内时是反应性的，但在喷射器中时不是反应性的，因为否则其可能会使辐射透射表面53的辐射透射或反射表面41的反射劣化。举例来说，处理气体可以是与另一第二前体反应但在不存在所述另一前体时不反应的第一前体。
被设置有照明系统的设备可被设置有流体系统，流体系统包括控制系统54以用于控制阀56，以在反应室中提供例如处理或净化气体的流体。流体可存储在流体存储装置58中或可从气体管线接收。控制系统和阀56可被构造和布置成在衬底上用存储在流体存储装置58中的第一和/或第二前体执行原子层沉积(ALD)或化学气相沉积(CVD)循环。
图6a到6c描绘根据另一实施例的透射辐射的照明系统。在图6a中，示出了配置在反应室6中的照明系统41的俯视图。在图6b和6c中，示出了图6a的照明系统41的放大俯视图。照明系统41被设置有辐射透射表面53以朝向衬底导引紫外辐射。辐射透射表面53可以是图4的放电灯的管43的部分。
辐射透射表面53可被提供流体57。流体57可以是净化气体或处理气体。设备可被设置有净化系统以用于用反应室6中的净化或处理气体的气流净化辐射透射表面53。无论是净化气体还是处理气体，气流都可抵消由来自反应室6的气体在辐射透射表面上造成的任何污染或沉积。此类污染或沉积可能会使辐射透射表面53的辐射透射劣化。以此方式，包括辐射透射和/或反射表面53的照明系统41可部分地设置在反应室6内。
被设置有照明系统的设备可被设置有流体系统。流体系统可包括流体控制系统54以用于控制阀56，以在反应室6中提供例如处理或净化气体的流体。流体可存储在流体存储装置58中或可来自气体管线。
紫外辐射可用于沉积——密化——原子层(ALD)、化学气相沉积(CVD)层或其它层。当在反应室中沉积例如硅或氮化硅的层时，当沉积材料的厚度在辐射透射表面的顶部上累加时，可能会因吸收而降低紫外辐射系统的效率。净化辐射透射表面可在一定程度上减轻此问题。
可能需要用蚀刻气体进行互补的定期原位清洁以清洁辐射透射或反射表面53、54。设备可包括蚀刻系统。蚀刻系统可包括流体存储装置58、控制系统54和阀56。控制系统54可被提供程序，程序在控制系统上运行时改进在层沉积于辐射透射或反射表面上之后的辐射透射或反射表面的透射率。
蚀刻流体可存储在蚀刻系统的流体存储装置58中。控制系统54可控制阀56以用于在反应室6中提供蚀刻流体。控制系统可控制阀56以在反应室中提供蚀刻流态物，即，蚀刻剂，以便蚀刻掉沉积在辐射透射53或反射表面上的层，从而改进表面的透射率。
蚀刻流体可以是氯化物(Cl2)、氯化硼(BCl3)、氯化氢(HCl)、四氟化碳(CF4)、三氟化氮(NF3)、溴化氢(HBr)、六氟化硫(SF6)，或由紫外辐射结合例如氢气或氧气的含氢或氧气体所产生的灰化组分。用蚀刻气体进行定期原位清洁还可用作净化辐射透射或反射表面的替代方案，这可简化设备的设计。
通过在氧化环境中的热处理将硅或氮化硅层定期转化为氧化硅，还可使辐射透射表面53或反射表面55再次透射或反射照明辐射。设备可包括转化系统。转化系统可包括流体存储装置58、控制系统54和阀56。控制系统54可被提供程序，程序在控制系统上运行时改进在层沉积于辐射透射或反射表面上之后的辐射透射或反射表面的透射率。
为此目的，包括例如氧气(O2)、臭氧(O3)、过氧化氢(H2O2)、水(H2O)或氧化亚氮(N2O)的流体的氧气可存储在流体存储装置58中。控制系统54可控制阀56以用于在反应室6中从流体存储装置提供氧化流体，并控制反应室的加热。在将硅或氮化硅层转化为氧化硅之后，氧化硅可透射UV，且可能不需要原位清洁。用氧化气体进行定期原位转化还可用作净化辐射透射或反射表面的替代方案，这可简化设备的设计。
图7a到7b描绘根据又一实施例的透射辐射的照明系统。在图7a中，示出了配置在反应室6中的喷射器系统59的俯视图。在图7b中，示出了图7a的喷射器系统59的放大侧视图。喷射器系统59被设置有气体入口61和气体出口63以及照明系统41。照明系统41被设置有辐射透射表面53以朝向喷射器系统59中的气体导引紫外辐射。
可通过喷射器系统59提供处理气体。来自照明系统41的UV辐射的能量可激活喷射器系统中的处理气体，使得如果处理气体通过气体出口63离开喷射器系统，那么处理气体可与反应室6中的衬底反应。可以此方式增加处理气体的反应性，以改进对反应室6中的衬底的反应性。
图8a到8c描绘根据另外实施例的包括照明系统的设备。反应室6、7可受到针对反应室中的处理气体形成阻挡物的工艺管65限制。工艺管可(部分地)充当辐射透射表面。照明系统可设置在反应室外部，并可被构造和布置成将紫外辐射通过工艺管65的辐射透射表面辐照到反应室中。
照明系统41可被构造和布置成从等离子体在工艺管65与外管67之间产生辐射。照明系统41可被构造和布置成由包括等离子体气体供应系统的系统产生等离子体，以在工艺管65与外管67之间提供用于等离子体的气体。为此目的，可在工艺管65与外管67之间提供例如氩气、氖气、氪气和氙气的稀有气体。为此目的，还可在工艺管65与外管67之间提供钠或汞。
图8a描绘了照明系统41可包括阳极69和阴极71，阳极69和阴极71被构造和布置成在工艺管65与外管67之间产生等离子体。等离子体可产生在100到500纳米的范围内的紫外辐射。根据另一实施例，紫外辐射可照明定位在工艺管65内的衬底中的至少一个衬底的顶表面。
图8b公开了可在阳极69与阴极71之间产生哪种不同的等离子体。在阳极附近存在阳极等离子体73，且在阴极71附近存在阴极等离子体77。阳辉区等离子体75可用于衬底的照明。
图8c描绘了根据另一实施例的照明系统41可具有感应装置，例如，感应线圈79，其可被构造和布置成在工艺管65与外管67之间产生等离子体。等离子体可产生在100到500纳米的范围内的紫外辐射。所述照明系统可被构造和布置成辐射具有100到500、优选地是150到400且甚至更优选地是170到300纳米的范围的紫外辐射。紫外辐射可照明定位在工艺管65内的衬底中的至少一个衬底的顶表面。感应线圈还可用于加热反应室。
紫外辐射可用于沉积——密化——原子层(ALD)、化学气相沉积(CVD)层或其它层。当在反应室中沉积层时，当沉积材料的厚度在工艺管65的内部上的辐射透射表面的顶部上累加时，可能会因吸收而大幅降低紫外辐射系统的效率。
可能需要用蚀刻气体进行原位清洁以清洁辐射透射表面。设备可因此包括蚀刻系统。蚀刻系统可包括如结合图6所描述的流体存储装置58、控制系统54和阀56，以在反应室6中提供蚀刻流体，即，蚀刻剂，以便蚀刻掉沉积在工艺管65上的层，从而改进工艺管的透射率。
通过在氧化环境中的热处理将处理管上的硅或氮化硅层转化为氧化硅，还可使辐射透射表面透射照明辐射。氧化环境可包括例如氧气(O2)、臭氧(O3)、过氧化氢(H2O2)、水(H2O)，或氧化亚氮(N2O)。SiO2可透射UV，且可能不需要原位清洁。
设备可因此包括转化系统。转化系统可包括流体存储装置58、控制系统54和阀56。控制系统54可控制阀56以用于在反应室6中从流体存储装置提供氧化流体，并控制反应室6的加热。在将处理管65上的硅或氮化硅层转化为氧化硅之后，氧化硅可透射UV，且可能不需要原位清洁。
图9描绘根据另一实施例的照明系统。照明系统41包括可个别控制的辐射源，例如发光二极管，以控制功率输出以用于在竖直方向上沿着衬底堆叠个别地从侧照明衬底13。用于在衬底13的方向上发射辐射束的照明系统41可定位在架12的一侧上。照明系统41可从所述侧向下朝向衬底13的顶表面辐照辐射束。如此处所示出，照明系统仅照明架12的顶部分，然而，实际上，照明系统41可遍及架12的整个长度而延伸。
辐射束相对于垂直于衬底13的顶表面的线的角度可介于60到90°之间、优选地介于80到89.5°之间且甚至更优选地介于85与89°之间。照明系统41的辐射束可略微平行。照明系统的辐射束的方向可因此被定义为由照明系统41发射的辐射的平均方向。
设备可包括相对于照明系统41在衬底架的另一侧上的反射器(未示出)，以将从衬底13反射的辐射反射回到衬底表面。反射器可以是回射器，以使辐射束在与辐射束所来自的方向相同的方向上反射回。反射器可包括选自包括玻璃、钢、铝或聚四氟乙烯(PTFE)的材料组的材料，以将辐射导引到衬底。
反射器可被设置有偏振器以将反射光的偏振改变90度，从而改进反射光的吸收。偏振器可以是薄板，其厚度是定位在反射器前方的波长的1/8。
照明系统可具有第一和第二组可个别控制的辐射源91、93。第一组可个别控制的辐射源91可被导引到衬底13的较远离边缘的表面，并相对于被导引到衬底13的边缘附近的顶表面的第二组可个别控制的辐射源93具有增加的功率输出。可以此方式增加遍及衬底表面的辐射强度的均匀性。如果遍及衬底表面的辐射强度是均匀的，那么遍及衬底表面由照明系统41进行的反应性增加变得相同，这对于工艺控制是有利的。
如所描绘，照明系统41可直接照明衬底13，然而，反应室还可受到在照明系统与衬底13之间的工艺管(在图8中被示出为65)限制。工艺管可针对处理气体形成阻挡物并至少部分地充当辐射透射表面。照明系统41可设置在反应室外部，并可被构造和布置成通过辐射透射表面将紫外辐射辐照到反应室中。工艺管可保护照明系统41免受反应室中提供的减轻温度和沉积产物的影响。
图10描绘根据另一实施例的用于处理包括照明系统的衬底的设备。如果从一侧提供照明系统，那么仅可直接照明衬底13的部分。通过向设备提供旋转装置以使衬底衬底在如由箭头95所描绘的方向上旋转，可保证均匀地照明衬底13。
衬底架12可在底部处被设置有绝缘塞，当架12在反应室6、7中向上移动(参见图1和2)时，绝缘塞相对于反应室6、7提供密封。为了增加照明系统41的照明均匀性，绝缘塞可被设置有(架)旋转装置以用于使具有衬底13的架12围绕竖轴旋转。架旋转装置可从以引入的方式并入本文中的第9,018,567 B2号美国专利得知。可以此方式增加遍及衬底表面的辐射强度的均匀性。如果遍及衬底表面的辐射强度是均匀的，那么遍及衬底表面由照明系统41进行的反应性增加变得相同，这对于工艺控制是有利的。
图11描绘在使用用于照明衬底13的照明系统41和用于使具有衬底13的架12围绕竖轴旋转的(架)旋转装置的设备中可能出现的问题。照明系统41的辐射可能会过度地照明和或加热衬底架的部分12a。辐射可能会从衬底架12散射通过反应室6的环境，从而照明设备的不希望被照明的部分。
图12描绘根据另一实施例的照明系统，其解决了过度地照明和或加热图11中的衬底架的部分12a的问题。衬底架12可被旋转以实现更均匀的照明分布并阻止过度加热。
另外，可使用可从控制系统获取的衬底架12的形状和架12的旋转位置的信息，以切断或限制将落到架12的前述部分12a的照明系统41的部分的功率。减少量的辐射可因此被衬底架12的部分12a接收，且较少的辐射可能会从衬底架12散射通过支撑构件的环境，从而照明和加热设备的不希望被照明或加热的部分。
设备可包括功率控制器97以控制照明系统41的功率，且功率控制器可被编程以沿着衬底架的宽度调整照明系统41的辐射输出，以避免衬底架的过度加热。
所示出和描述的特定实施方案是对本发明及其最佳模式的说明，而无意以任何方式限制各方面和实施方案的范围。事实上，为了简洁起见，系统的常规制造、连接、准备和其它功能方面可能未详细描述。此外，各图中所示的连接线旨在表示各种元件之间的示例性功能关系和/或物理联接。许多替代的或附加的功能关系或物理连接可能存在于实际的系统中，和/或在一些实施方案中可能不存在。
应理解，本文中所描述的配置和/或方法本质上是示例性的，并且这些特定实施例或实例不被认为是限制性的，因为许多变化是可能的。本文中所描述的特定例程或方法可以表示任何数目个处理策略中的一个或多个。因此，所说明的各种动作可以以所说明的顺序执行、以其它顺序执行或者在一些情况下可以省略。
本公开的主题包含本文中所公开的各种工艺、系统和配置及其它特征、功能、动作和/或特性以及其任何和所有等效物的所有新颖和非显而易见的组合和子组合。

Claims (23)

1.一种衬底处理设备，其包括：
反应室；以及
衬底架，其用于在所述反应室中提供多个衬底，所述衬底架包括多个间隔开的衬底固持装置，所述衬底固持装置被配置成以间隔开的关系固持所述多个衬底，其中所述设备包括照明系统，所述照明系统被构造和布置成将在100到500纳米的范围内的紫外辐射从所述衬底架的一侧辐照到所述衬底架中的所述衬底中的至少一个衬底的顶表面上。
2.根据权利要求1所述的设备，其中所述设备包括用于加热所述反应室中的所述衬底的加热器。
3.根据权利要求1所述的设备，其中所述设备被设置有衬底架旋转装置，所述衬底架旋转装置被构造和布置成使所述衬底架围绕竖轴旋转，且所述照明系统被布置成从所述竖轴水平地位移。
4.根据权利要求1所述的设备，其中所述照明系统被构造和布置成将所述辐射束从所述衬底架的一侧向下发射到固持在所述衬底架中的所述衬底的顶表面，所述发射的角度相对于垂直于所述衬底的所述表面的线介于60到90°之间。
5.根据权利要求1所述的设备，其中所述照明系统被设置有辐射透射或反射表面以将所述紫外辐射导引到所述衬底。
6.根据权利要求5所述的设备，其中所述反应室受到形成阻挡物并至少部分地充当所述辐射透射表面的工艺管限制，且所述照明系统设置在所述反应室外部，并被构造和布置成通过所述辐射透射表面将所述紫外辐射辐照到所述反应室中。
7.根据权利要求5所述的设备，其中所述设备被设置有净化系统以用于净化所述反应室中的辐射透射或反射表面。
8.根据权利要求5所述的设备，其中包括所述辐射透射或反射表面的所述照明系统部分地设置在所述反应室内。
9.根据权利要求8所述的设备，其中至少一个喷射器设置在所述反应室内以用于将流体提供到所述反应室中，且所述照明系统被构造和布置成通过所述喷射器将所述辐射提供到所述衬底。
10.根据权利要求9所述的设备，其中所述设备被构造和布置成通过所述喷射器提供净化或处理气体。
11.根据权利要求1所述的设备，其中所述照明系统包括多个部分以将紫外辐射从多个侧辐照到所述衬底架中的所述衬底。
12.根据权利要求1所述的设备，其中所述照明系统具有螺旋形状以将紫外辐射从多个侧辐照到所述衬底架中的所述衬底。
13.根据权利要求5所述的设备，其中至少一个喷射器设置在所述反应室内以用于将流体提供到所述反应室中，且所述设备被设置有控制系统以用于控制阀以在所述反应室中提供流体，以便将层沉积在所述衬底上。
14.根据权利要求13所述的设备，其中所述控制系统被设置有程序，所述程序在所述控制系统上运行时改进在层沉积于所述辐射透射或反射表面上之后的所述辐射透射或反射表面的透射率。
15.根据权利要求13所述的设备，其中用于将流体提供到所述反应室的所述阀连接到包括氧化流体的流体存储装置，且所述控制系统控制所述阀以在所述反应室中提供所述氧化流体，以便氧化沉积在所述辐射透射或反射表面上的层，以改进所述层的透射率。
16.根据权利要求13所述的设备，其中用于将流体提供到所述反应室的所述阀连接到包括蚀刻剂流体的流体存储装置，且所述控制器控制所述阀以在所述反应室中提供所述蚀刻剂，以便蚀刻掉沉积在所述辐射透射或反射表面上的层，以改进所述表面的透射率。
17.一种用于处理反应室中的多个衬底的方法，其包括：
在衬底架中提供所述多个衬底，所述衬底架包括多个间隔开的衬底固持装置，所述衬底固持装置被配置成以间隔开的关系固持所述多个衬底；
将在100到500纳米的范围内的紫外辐射从所述衬底架的一侧辐照到所述反应室中的所述衬底架中的所述衬底。
18.根据权利要求17所述的方法，其中将紫外辐射辐照到所述衬底架中的所述衬底包括将所述紫外辐射经由辐射透射或反射表面导引到所述衬底。
19.根据权利要求17所述的方法，其中所述方法包括经由喷射器在所述反应室中提供流体，以便将层沉积在所述衬底上。
20.根据权利要求17所述的方法，其中所述方法包括在所述反应室中移动具有衬底的所述架。
21.根据权利要求19所述的方法，其中所述方法包括：
在所述反应室中提供氧化流体；以及，
氧化沉积在所述辐射透射或反射表面上的层，以改进所述辐射透射或反射表面的透射率。
22.根据权利要求19所述的方法，其中所述方法包括：
在所述反应室中提供蚀刻流体；以及，
蚀刻沉积在所述辐射透射或反射表面上的层，以改进所述辐射透射或反射表面的透射率。
23.一种衬底处理设备，其包括：
反应室，其受到形成阻挡物的工艺管限制；
衬底架，其能移动到所述反应室中以用于在所述反应室中引入多个衬底，所述衬底架包括多个间隔开的衬底固持装置，所述衬底固持装置被配置成以间隔开的关系固持所述多个衬底，其中所述设备包括照明系统，所述照明系统被构造和布置在所述反应室外部，以将具有100到500纳米的范围的紫外辐射通过所述工艺管辐照到所述反应室中。
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