JP2020084323A - 周期的堆積プロセスにより基材上に遷移金属カルコゲン化物膜を堆積させる方法 - Google Patents
周期的堆積プロセスにより基材上に遷移金属カルコゲン化物膜を堆積させる方法 Download PDFInfo
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- JP2020084323A JP2020084323A JP2019203035A JP2019203035A JP2020084323A JP 2020084323 A JP2020084323 A JP 2020084323A JP 2019203035 A JP2019203035 A JP 2019203035A JP 2019203035 A JP2019203035 A JP 2019203035A JP 2020084323 A JP2020084323 A JP 2020084323A
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- precursor
- transition metal
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- zirconium
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- 229910052723 transition metal Inorganic materials 0.000 title claims abstract description 159
- -1 transition metal chalcogenide Chemical class 0.000 title claims abstract description 153
- 238000000151 deposition Methods 0.000 title claims abstract description 146
- 238000000034 method Methods 0.000 title claims abstract description 114
- 239000000758 substrate Substances 0.000 title claims abstract description 106
- 238000005137 deposition process Methods 0.000 title claims abstract description 23
- 125000004122 cyclic group Chemical group 0.000 title claims abstract description 16
- 239000002243 precursor Substances 0.000 claims abstract description 190
- 238000006243 chemical reaction Methods 0.000 claims abstract description 89
- 150000001787 chalcogens Chemical class 0.000 claims abstract description 78
- 229910052798 chalcogen Inorganic materials 0.000 claims abstract description 77
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 47
- 150000003624 transition metals Chemical class 0.000 claims abstract description 45
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 43
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 29
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims description 118
- 239000000376 reactant Substances 0.000 claims description 107
- 239000007789 gas Substances 0.000 claims description 97
- 229910052760 oxygen Inorganic materials 0.000 claims description 44
- 239000001301 oxygen Substances 0.000 claims description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 35
- 239000003446 ligand Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 238000000231 atomic layer deposition Methods 0.000 claims description 28
- 230000000737 periodic effect Effects 0.000 claims description 23
- 238000005229 chemical vapour deposition Methods 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 239000012159 carrier gas Substances 0.000 claims description 19
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 19
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical group S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 11
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims description 11
- 230000007613 environmental effect Effects 0.000 claims description 10
- 229910052914 metal silicate Inorganic materials 0.000 claims description 10
- 150000004820 halides Chemical class 0.000 claims description 9
- 238000011065 in-situ storage Methods 0.000 claims description 8
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 claims description 7
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims description 7
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 claims description 7
- QMMFVYPAHWMCMS-UHFFFAOYSA-N Dimethyl sulfide Chemical compound CSC QMMFVYPAHWMCMS-UHFFFAOYSA-N 0.000 claims description 6
- 239000007983 Tris buffer Substances 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- 229910007926 ZrCl Inorganic materials 0.000 claims description 5
- YMUZFVVKDBZHGP-UHFFFAOYSA-N dimethyl telluride Chemical compound C[Te]C YMUZFVVKDBZHGP-UHFFFAOYSA-N 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- IUNSCQXGSVFKQT-UHFFFAOYSA-N CC1(C=CC=C1)C(OC[Hf])C1(C=CC=C1)C Chemical compound CC1(C=CC=C1)C(OC[Hf])C1(C=CC=C1)C IUNSCQXGSVFKQT-UHFFFAOYSA-N 0.000 claims description 2
- IIOXMCVNAYEDIK-UHFFFAOYSA-N CC1(C=CC=C1)C(OC[Zr])C1(C=CC=C1)C Chemical compound CC1(C=CC=C1)C(OC[Zr])C1(C=CC=C1)C IIOXMCVNAYEDIK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 44
- 239000012808 vapor phase Substances 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 184
- 239000012071 phase Substances 0.000 description 74
- 239000010410 layer Substances 0.000 description 51
- 230000008569 process Effects 0.000 description 51
- NRJVMVHUISHHQB-UHFFFAOYSA-N hafnium(4+);disulfide Chemical compound [S-2].[S-2].[Hf+4] NRJVMVHUISHHQB-UHFFFAOYSA-N 0.000 description 32
- 239000000203 mixture Substances 0.000 description 25
- 238000010926 purge Methods 0.000 description 22
- 150000004770 chalcogenides Chemical class 0.000 description 21
- 238000001341 grazing-angle X-ray diffraction Methods 0.000 description 21
- 125000004429 atom Chemical group 0.000 description 20
- WVMYSOZCZHQCSG-UHFFFAOYSA-N bis(sulfanylidene)zirconium Chemical compound S=[Zr]=S WVMYSOZCZHQCSG-UHFFFAOYSA-N 0.000 description 18
- XWPGCGMKBKONAU-UHFFFAOYSA-N zirconium(4+);disulfide Chemical compound [S-2].[S-2].[Zr+4] XWPGCGMKBKONAU-UHFFFAOYSA-N 0.000 description 18
- 229910052717 sulfur Inorganic materials 0.000 description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- 239000013078 crystal Substances 0.000 description 13
- 239000011669 selenium Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 239000006227 byproduct Substances 0.000 description 9
- 125000002524 organometallic group Chemical group 0.000 description 9
- 229910052711 selenium Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052714 tellurium Inorganic materials 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 125000000217 alkyl group Chemical group 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- DWRNSCDYNYYYHT-UHFFFAOYSA-K gallium(iii) iodide Chemical compound I[Ga](I)I DWRNSCDYNYYYHT-UHFFFAOYSA-K 0.000 description 7
- 229910000449 hafnium oxide Inorganic materials 0.000 description 7
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 229910021389 graphene Inorganic materials 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 125000006527 (C1-C5) alkyl group Chemical group 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 150000004703 alkoxides Chemical class 0.000 description 4
- 239000002178 crystalline material Substances 0.000 description 4
- 125000002188 cycloheptatrienyl group Chemical group C1(=CC=CC=CC1)* 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 239000012707 chemical precursor Substances 0.000 description 3
- 238000010574 gas phase reaction Methods 0.000 description 3
- FEEFWFYISQGDKK-UHFFFAOYSA-J hafnium(4+);tetrabromide Chemical compound Br[Hf](Br)(Br)Br FEEFWFYISQGDKK-UHFFFAOYSA-J 0.000 description 3
- YCJQNNVSZNFWAH-UHFFFAOYSA-J hafnium(4+);tetraiodide Chemical compound I[Hf](I)(I)I YCJQNNVSZNFWAH-UHFFFAOYSA-J 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000009738 saturating Methods 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 description 3
- LSWWNKUULMMMIL-UHFFFAOYSA-J zirconium(iv) bromide Chemical compound Br[Zr](Br)(Br)Br LSWWNKUULMMMIL-UHFFFAOYSA-J 0.000 description 3
- CGWDABYOHPEOAD-VIFPVBQESA-N (2r)-2-[(4-fluorophenoxy)methyl]oxirane Chemical compound C1=CC(F)=CC=C1OC[C@@H]1OC1 CGWDABYOHPEOAD-VIFPVBQESA-N 0.000 description 2
- SDTMFDGELKWGFT-UHFFFAOYSA-N 2-methylpropan-2-olate Chemical compound CC(C)(C)[O-] SDTMFDGELKWGFT-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 125000005103 alkyl silyl group Chemical group 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- 229960002887 deanol Drugs 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- UZBQIPPOMKBLAS-UHFFFAOYSA-N diethylazanide Chemical compound CC[N-]CC UZBQIPPOMKBLAS-UHFFFAOYSA-N 0.000 description 2
- QKIUAMUSENSFQQ-UHFFFAOYSA-N dimethylazanide Chemical compound C[N-]C QKIUAMUSENSFQQ-UHFFFAOYSA-N 0.000 description 2
- 239000012972 dimethylethanolamine Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- HHFAWKCIHAUFRX-UHFFFAOYSA-N ethoxide Chemical compound CC[O-] HHFAWKCIHAUFRX-UHFFFAOYSA-N 0.000 description 2
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- NBTOZLQBSIZIKS-UHFFFAOYSA-N methoxide Chemical compound [O-]C NBTOZLQBSIZIKS-UHFFFAOYSA-N 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 150000002835 noble gases Chemical class 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- OGHBATFHNDZKSO-UHFFFAOYSA-N propan-2-olate Chemical compound CC(C)[O-] OGHBATFHNDZKSO-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- KAJBHOLJPAFYGK-UHFFFAOYSA-N [Sn].[Ge].[Si] Chemical compound [Sn].[Ge].[Si] KAJBHOLJPAFYGK-UHFFFAOYSA-N 0.000 description 1
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- LNMGXZOOXVAITI-UHFFFAOYSA-N bis(selanylidene)hafnium Chemical compound [Se]=[Hf]=[Se] LNMGXZOOXVAITI-UHFFFAOYSA-N 0.000 description 1
- IBPNRGHKXLNFKF-UHFFFAOYSA-N bis(sulfanylidene)hafnium Chemical compound S=[Hf]=S IBPNRGHKXLNFKF-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004871 chemical beam epitaxy Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- GOVWJRDDHRBJRW-UHFFFAOYSA-N diethylazanide;zirconium(4+) Chemical compound [Zr+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC GOVWJRDDHRBJRW-UHFFFAOYSA-N 0.000 description 1
- DWCMDRNGBIZOQL-UHFFFAOYSA-N dimethylazanide;zirconium(4+) Chemical compound [Zr+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C DWCMDRNGBIZOQL-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- HVEIXSLGUCQTMP-UHFFFAOYSA-N selenium(2-);zirconium(4+) Chemical compound [Se-2].[Se-2].[Zr+4] HVEIXSLGUCQTMP-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- XLMQAUWIRARSJG-UHFFFAOYSA-J zirconium(iv) iodide Chemical compound [Zr+4].[I-].[I-].[I-].[I-] XLMQAUWIRARSJG-UHFFFAOYSA-J 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
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Abstract
Description
本願で特許請求される発明は、ヘルシンキ大学(the University of Helsinki)とASM Microchemistry Oyとの間の共同研究協約によって、又は共同研究協約のために、及び/又は共同研究協約に関連してなされた。当協約は、特許請求される発明がなされた日及びその日以前に発効しており、特許請求される発明は、当協約の範囲内で取り組まれた活動の結果としてなされたものである。
HfL1L2L3L4
(式中、L1からL4までの各L配位子は、
a) ハロゲン化物、例えば塩化物、臭化物、またはヨウ化物
b) アルキルアミド、例えばジメチルアミド(−NMe2)、ジエチルアミド(−NEt2)、エチルメチルアミド(−NEtMe)
c) アミジネート、例えばN,N’−ジメチルホルムアミジネート
d) グアニジネート、例えばN,N’−ジイソプロピル−2−エチルメチルアミドグアニジネート
e) シクロペンタジエニルまたはそれらの誘導体、例えばシクロペンタジエニルもしくはメチルシクロペンタジエニルまたは他のアルキル置換シクロペンタジエニル配位子
f) シクロヘプタジエニルまたはシクロヘプタトリエニル系、例えばシクロヘプタトリエニルまたはシクロヘプタジエニル
g) アルキル、例えばC1〜C5アルキル、例えばヘテロレプティック前駆体の場合はほとんどがメチル
h) アルコキシド、例えばメトキシド(−OMe)、エトキシド(−OEt)、イソプロポキシド(−OiPr)、n−ブトキシド(−OBu)またはtert−ブトキシド(−OtBu)
i) ベータジケトネート、例えば(2,2,6,6−テトラメチル−3,5−ヘプタンジオナト)(thd)
j) ドナー官能化アルコキシド、例えばジメチルエタノールアミン、であるように独立して選択される)を有してもよい。
ZrL1L2L3L4
(式中、L1からL4までの各L配位子は、
k) ハロゲン化物、例えば塩化物、臭化物、またはヨウ化物
l) アルキルアミド、例えばジメチルアミド(−NMe2)、ジエチルアミド(−NEt2)、エチルメチルアミド(−NEtMe)
m) アミジネート、例えばN,N’−ジメチルホルムアミジネート
n) グアニジネート、例えばN,N’−ジイソプロピル−2−エチルメチルアミドグアニジネート
o) シクロペンタジエニルまたはそれらの誘導体、例えばシクロペンタジエニルもしくはメチルシクロペンタジエニルまたは他のアルキル置換シクロペンタジエニル配位子
p) シクロヘプタジエニルまたはシクロヘプタトリエニル系、例えばシクロヘプタトリエニルまたはシクロヘプタジエニル
q) アルキル、例えばC1〜C5アルキル、例えばヘテロレプティック前駆体の場合はほとんどがメチル
r) アルコキシド、例えばメトキシド(−OMe)、エトキシド(−OEt)、イソプロポキシド(−OiPr)、n−ブトキシド(−OBu)またはtert−ブトキシド(−OtBu)
s) ベータジケトネート、例えば(2,2,6,6−テトラメチル−3,5−ヘプタンジオナト)(thd)
t) ドナー官能化アルコキシド、例えばジメチルエタノールアミン、であるように独立して選択される)を有してもよい。
Claims (20)
- 周期的堆積プロセスによって基材上に遷移金属カルコゲン化物膜を堆積させる方法であって、前記方法が、
前記基材を、ハフニウム前駆体、またはジルコニウム前駆体のうちの少なくとも一つを含む少なくとも一つの遷移金属含有気相反応物質と接触させる工程と、
前記基材を、少なくとも一つのカルコゲン含有気相反応物質と接触させる工程であって、前記接触させる工程中の前記基材の温度は約450℃未満である、接触させる工程と、を含む、方法。 - 前記周期的堆積プロセスが原子層堆積を含む、請求項1に記載の方法。
- 前記周期的堆積プロセスが周期的化学気相堆積を含む、請求項1に記載の方法。
- 前記ハフニウム前駆体または前記ジルコニウム前駆体が、ハロゲン化物前駆体または金属有機前駆体のうちの少なくとも一つを含む、請求項1に記載の方法。
- 前記ハロゲン化物前駆体が、四塩化ハフニウム(HfCl4)または四塩化ジルコニウム(ZrCl4)のうちの少なくとも一つを含む、請求項4に記載の方法。
- 前記金属有機前駆体は、アルキルアミド前駆体、またはシクロペンタジエニル配位子含有前駆体のうちの少なくとも一つを含む、請求項4に記載の方法。
- 前記アルキルアミド前駆体は、テトラキス(エチルメチルアミド)ハフニウム(Hf(NEtMe)4)、またはテトラキス(エチルメチルアミド)ジルコニウム(Zr(NEtMe)4)のうちの少なくとも一つを含む、請求項6に記載の方法。
- 前記シクロペンタジエニル配位子含有前駆体は、(トリス(ジメチルアミド)シクロペンタジエニルハフニウム(HfCp(NMe2)3)、ビス(メチルシクロペンタジエニル)メトキシメチルハフニウム((MeCp)2Hf(CH)3(OCH3))、トリス(ジメチルアミド)シクロペンタジエニルジルコニウム(ZrCp(NMe2)3)、またはビス(メチルシクロペンタジエニル)メトキシメチルジルコニウム((MeCp)2Zr(CH)3(OCH3))のうちの少なくとも一つを含む、請求項6に記載の方法。
- 前記少なくとも一つのカルコゲン含有気相反応物質は、硫化水素(H2S)、セレン化水素(H2Se)、硫化ジメチル((CH3)2S)、またはテルル化ジメチル(CH3)2Teを含む、請求項1に記載の方法。
- 前記カルコゲン含有気相反応物質内の水または酸素のうちの少なくとも一つの濃度を低減させるために、前記カルコゲン含有気相反応物質を反応チャンバーに入れる前にガス精製器を通して流す工程をさらに含む、請求項1に記載の方法。
- 前記カルコゲン含有気相反応物質内の水または酸素のうちの少なくとも一つの濃度が、1ppm未満に低減される、請求項10に記載の方法。
- 前記遷移金属含有気相反応物質を前記反応チャンバーに輸送するために、前記遷移金属含有気相反応物質の供給源を収容する容器を通してキャリアガスを流す工程をさらに含み、前記キャリアガス内の水または酸素のうちの少なくとも一つの濃度を低減させるために、前記キャリアガスを前記遷移金属含有気相反応物質の前記供給源に入れる前にガス精製器を通して流す工程をさらに含む、請求項1に記載の方法。
- 前記キャリアガス内の水または酸素のうちの少なくとも一つの濃度は、1ppm未満に低減される、請求項12に記載の方法。
- 膜堆積の前に前記反応チャンバーを500℃を超える温度でプレアニールする工程をさらに含む、請求項1に記載の方法。
- 前記遷移金属カルコゲン化物膜は、(001)優先結晶配向を含む、請求項1に記載の方法。
- 環境条件に曝される場合に前記遷移金属カルコゲン化物膜の酸化を実質的に防ぐために前記遷移金属カルコゲン化物膜上にキャッピング層をその場堆積する工程をさらに含む、請求項1に記載の方法。
- 前記遷移金属カルコゲン化物膜上にキャッピング層をその場堆積する工程が、非酸化性前駆体、または非酸素反応物質を利用して前記キャッピング層を堆積させる工程をさらに含む、請求項16に記載の方法。
- 前記キャッピング層が、金属ケイ酸塩膜を含む、請求項16に記載の方法。
- 前記金属ケイ酸塩膜が、ケイ酸アルミニウム膜(AlxSiyOz)を含む、請求項18に記載の方法。
- 請求項1に記載の方法によって堆積される遷移金属カルコゲン化物膜を含む半導体デバイス構造。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2023278389A1 (en) * | 2021-06-28 | 2023-01-05 | Applied Materials, Inc. | Low temperature growth of transition metal chalcogenides |
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TW202030353A (zh) | 2020-08-16 |
US20220115232A1 (en) | 2022-04-14 |
US10847366B2 (en) | 2020-11-24 |
US20210005450A1 (en) | 2021-01-07 |
US11244825B2 (en) | 2022-02-08 |
KR20200058290A (ko) | 2020-05-27 |
US20200161129A1 (en) | 2020-05-21 |
CN111197159A (zh) | 2020-05-26 |
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