TWI730987B - NbMC層 - Google Patents
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- TWI730987B TWI730987B TW105131284A TW105131284A TWI730987B TW I730987 B TWI730987 B TW I730987B TW 105131284 A TW105131284 A TW 105131284A TW 105131284 A TW105131284 A TW 105131284A TW I730987 B TWI730987 B TW I730987B
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- 238000000034 method Methods 0.000 claims abstract description 64
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 239000002243 precursor Substances 0.000 claims description 131
- 239000002184 metal Substances 0.000 claims description 115
- 229910052751 metal Inorganic materials 0.000 claims description 114
- 239000000758 substrate Substances 0.000 claims description 81
- -1 niobium halide Chemical class 0.000 claims description 53
- 229910052782 aluminium Inorganic materials 0.000 claims description 51
- 239000010955 niobium Substances 0.000 claims description 45
- 229910052752 metalloid Inorganic materials 0.000 claims description 44
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 43
- 238000006243 chemical reaction Methods 0.000 claims description 43
- 238000000151 deposition Methods 0.000 claims description 43
- 150000002738 metalloids Chemical class 0.000 claims description 38
- 229910052758 niobium Inorganic materials 0.000 claims description 34
- 230000008021 deposition Effects 0.000 claims description 32
- 238000005137 deposition process Methods 0.000 claims description 30
- 229910052799 carbon Inorganic materials 0.000 claims description 29
- 239000000203 mixture Substances 0.000 claims description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 26
- 238000010926 purge Methods 0.000 claims description 26
- 125000004122 cyclic group Chemical group 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 17
- 239000006227 byproduct Substances 0.000 claims description 14
- 239000003446 ligand Substances 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 9
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 125000002524 organometallic group Chemical group 0.000 claims description 5
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- RTAKQLTYPVIOBZ-UHFFFAOYSA-N tritert-butylalumane Chemical compound CC(C)(C)[Al](C(C)(C)C)C(C)(C)C RTAKQLTYPVIOBZ-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 60
- 229910052796 boron Inorganic materials 0.000 description 47
- 230000006870 function Effects 0.000 description 32
- 239000000463 material Substances 0.000 description 30
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 28
- 150000002430 hydrocarbons Chemical class 0.000 description 27
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 21
- 239000007789 gas Substances 0.000 description 19
- 150000001875 compounds Chemical class 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000000560 X-ray reflectometry Methods 0.000 description 5
- 239000003638 chemical reducing agent Substances 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 239000000376 reactant Substances 0.000 description 5
- 229910052723 transition metal Inorganic materials 0.000 description 5
- 150000003624 transition metals Chemical class 0.000 description 5
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 150000004820 halides Chemical class 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 229910001507 metal halide Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 229910021482 group 13 metal Inorganic materials 0.000 description 3
- 229910018173 Al—Al Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910019800 NbF 5 Inorganic materials 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910000086 alane Inorganic materials 0.000 description 2
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001639 boron compounds Chemical class 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- AOLPZAHRYHXPLR-UHFFFAOYSA-I pentafluoroniobium Chemical compound F[Nb](F)(F)(F)F AOLPZAHRYHXPLR-UHFFFAOYSA-I 0.000 description 2
- 241000894007 species Species 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 2
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000579895 Chlorostilbon Species 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- VUSQXHIQCFUDHK-UHFFFAOYSA-N bismuth tantalum Chemical compound [Ta][Bi] VUSQXHIQCFUDHK-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052876 emerald Inorganic materials 0.000 description 1
- 239000010976 emerald Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910000311 lanthanide oxide Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- DSYRJFDOOSKABR-UHFFFAOYSA-I niobium(v) bromide Chemical compound [Br-].[Br-].[Br-].[Br-].[Br-].[Nb+5] DSYRJFDOOSKABR-UHFFFAOYSA-I 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- FWIYBTVHGYLSAZ-UHFFFAOYSA-I pentaiodoniobium Chemical compound I[Nb](I)(I)(I)I FWIYBTVHGYLSAZ-UHFFFAOYSA-I 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
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- H—ELECTRICITY
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Abstract
本發明揭示形成包括一或多個NbMC層之薄膜結構之方法及包括該等一或多個NbMC層之結構及裝置。該等NbMC層能夠調諧各種結構及裝置特性,包括電阻率、漏電流及功函數。
Description
本發明大體上係關於用於形成包括一或多個鈮金屬或類金屬碳化物(niobium metal or metalloid carbide;NbMC)層之結構之技術,關於包括一或多個鈮金屬或類金屬碳化物層之裝置,且關於形成該等結構及裝置之方法。
場效電晶體(Field-effect transistor;FET)裝置,諸如金屬-氧化物-半導體FET(metal-oxide-semiconductor FET;MOSFET)裝置通常包括源極區、汲極區、源極區與汲極區之間的通道區及上覆於通道區且藉由介電材料與通道區分離之閘電極。互補MOSFET(complimentary MOSFET;CMOS)裝置包括p型MOSFET裝置及n型MOSFET裝置。亦存在類似鰭式場效電晶體(FinFET)之三維電晶體架構。為了按需要運作,n型裝置之閘電極的功函數及p型裝置之閘電極的功函數必須相差一定量。功函數差通常藉由調諧閘電極材料獲得。
傳統上,使用氧化矽作為介電材料且使用多晶矽作為閘電極材料來形成MOSFET裝置。多晶矽作為閘電極材料工作相對較佳,因為其使得相對較易於調諧裝置之功函數且因此相對較易於調諧裝置之臨限電壓。
伴隨MOSFET裝置按比例縮小以符合所需效能標準,金屬通常已替代多晶矽作為高效能裝置之閘電極材料且高介電常數材料通常已替代氧化矽作為高效能裝置之介電材料。然而,藉由用金屬替代多晶矽,閘極與通道之間的功函數差變得較難以調諧。因此,裝置之臨限電壓的調節變得更加困難。
以促進包括金屬閘電極之MOSFET裝置的功函數調諧,閘極結構可包括額外金屬層,亦即功函數層,以調諧功函數且因此調諧裝置之臨限電壓。通常,功函數層比閘電極金屬相對較不具導電性,其可導致裝置之所需效能喪失。增加功函數層之導電性的嘗試通常會導致裝置之功函數較低。
因此,需要適用於可調諧功函數層的改良材料層及包括該等層之結構及裝置以及形成該等層、結構及裝置之方法。
本發明之各個具體實例係關於形成包括一或多個鈮金屬及/或類金屬碳化物(在本文中統稱為NbMC,其中M表示金屬及/或類金屬)層或膜之結構及裝置的方法且關於包括NbMC層之結構及裝置。一般而言,本發明之具體實例提供形成具有一或多個NbMC可調諧功函數層之結構及裝置的方法,該等功函數層展現相對較低電阻率及/或相對較易於調諧。此外,包括NbMC層之例示性裝置及結構展現相對較低功函數且該等裝置及結構之功函數可在相對較廣泛範圍內調諧。此外,相對於用作功函數層或相似層之其他材料層,例示性NbMC層可展現相對較高抗氧化性。出於簡單起見之原因,對於包含鈮、金屬或類金屬及碳之膜,僅用字首語NbMC
敍述該等膜,且字首語NbMC不對例如膜之化學計算量或膜中之鍵結類型或原子之間的鍵結加以限制。
本發明之各種其他具體實例係關於一種形成薄膜結構之方法,其中該方法包括在反應空間內提供基板且使用第一循環沉積製程在該基板之表面上形成包含NbMC之層,其中M表示金屬(諸如鋁)及/或類金屬(有時稱作半金屬)(諸如硼),且其中第一循環沉積製程包含至少一次沉積循環,該循環包含將包含Nb之第一前驅體及包含金屬(及/或類金屬)及碳之第二前驅體交替地提供至反應空間。第一前驅體可包含鹵化鈮,諸如氯化鈮(NbCl5)及/或包括鈮及氯之其他化合物,或在類金屬之情況下,諸如氟化鈮(NbF5)。第二前驅體可包括一或多種碳-促成化合物,諸如有機金屬化合物一例如,金屬(例如,鋁)烴化合物或類金屬(例如,硼)烴化合物。金屬或類金屬烴化合物可為例如金屬或類金屬之烷基、烯基或炔基化合物。金屬或類金屬烴化合物可為例如鋁或硼之烷基化合物。在一些具體實例中,金屬烴化合物包含至少一或多個Al-C鍵。在一些具體實例中,金屬烴化合物包含兩個或小於兩個Al-H鍵。在一些具體實例中,金屬烴化合物不包含Al-Al鍵。在一些具體實例中,金屬烴化合物不包含氧及/或鹵化物。在一些具體實例中,金屬烴化合物僅包含鋁、氫及碳且無其他元素。在一些具體實例中,鋁烴化合物包含與鋁連接之C2-C5或C2-C4烴配位體,諸如烷基配位體。藉助於實施例,鋁烴化合物選自由以下組成之群中之一或多者:三甲基鋁(TMA)、三乙基鋁(TEA)、氫化二甲基鋁(DMAH)、二甲基乙基胺基鋁烷(DMEAA)、三甲基胺基鋁烷(TEAA)、N-甲基吡咯啶鋁烷(MPA)、三異丁基鋁(TIBA)及三第三丁基鋁(TTBA)。在一些具體
實例中,鋁烴化合物不為三甲基鋁(TMA)。在一些具體實例中,金屬烴化合物包含鍵結至鋁之第三丁基配位體。在一些具體實例中,金屬烴化合物為三第三丁基鋁。在一些具體實例中,類金屬(例如,硼)烴化合物包含烷基硼化合物。在一些具體實例中,硼烴化合物包含至少一或多個B-C鍵。在一些具體實例中,硼烴化合物包含B-H鍵。在一些具體實例中,硼烴化合物不包含B-B鍵。在一些具體實例中,硼烴化合物不包含僅具有硼及氫之化合物。在一些具體實例中,硼烴化合物不包含氧及/或鹵化物。在一些具體實例中,硼烴化合物包含硼、氫及碳且無其他元素。藉助於實施例,硼烴化合物選自由三甲基硼及三乙基硼組成之群中之一或多者。在一些具體實例中,硼烴化合物包含具有1、2或3個C1-C5烴配位體,諸如烷基配位體之硼化合物。根據此等具體實例之其他態樣,該方法進一步包含使用包含至少一次沉積循環之第二循環沉積製程,該循環包含將包含Nb之第三前驅體及包含金屬及/或類金屬及碳之第四前驅體交替地提供至反應空間,其中呈以下中之至少一者:第三前驅體與第一前驅體不同且第四前驅體與第二前驅體不同。在此等情況下,第一循環沉積製程與第二循環沉積製程具有至少一種與其他方法中所用之前驅體有所不同的前驅體。此可使得包括NbMC層之結構及裝置得到額外調諧。儘管結合在反應空間中形成層加以描述,但NbMC層可使用空間沉積法來形成。包括空間沉積法之例示性沉積法會在下文中加以較詳細描述。
根據本發明之又其他例示性具體實例,使用如本文所述之方法形成一種裝置。形成裝置之例示性方法包括在反應空間內提供基板且使用第一循環沉積製程在該基板之表面上形成包含NbMC之層,其中M表示
金屬及/或類金屬,且其中第一循環沉積製程包含至少一次沉積循環,該循環包含將包含Nb之第一前驅體及包含金屬及/或類金屬及碳之第二前驅體交替地提供至反應空間。第一及第二前驅體可與上文及文中其他處所述之前驅體相同或相似。例示性方法可包括形成額外裝置層,諸如閘極氧化物層及/或閘電極層。
本發明之其他具體實例係關於包括基板及一或多種上覆於該基板所形成之NbMC層的薄膜結構。一或多個NbMC層可包括按原子計至多約30%至約60%或約40%至約50%碳,按原子計約10%至約40%或20%至約30%鈮,及按原子計約10%至約40%或20%至約30%金屬(例如,第13族金屬,諸如鋁)及/或類金屬(例如,硼)。M可選自由鋁或硼組成之群。例示性結構亦可包括除了NbMC層以外之層,該等額外層包括(但不限於)以下中之一或多者:基板、介電層、蝕刻終止層、障壁層及金屬層。結構特性可藉由調諧NbMC層中之一或多者加以操控。舉例而言,特性可藉由:(1)調整所沉積之多個NbMC層,(2)調整一或多個NbMC層之組成及/或(3)調整各層之厚度來操控。根據此等具體實例,結構可具有任何適合數目之NbMC層、其他金屬碳化物層及其他層。例示性NbMC膜可包括離散層或使用兩種或大於兩種製程在表面上沉積之NbMC層之混合物及/或與一或多個其他金屬碳化物層混合之NbMC層。兩種或大於兩種製程可使用例如至少一種不同前驅體以調整NbMC層之組成或特性。在一些具體實例中,NbMC膜不包含大量或任何量之氮。在一些具體實例中,除鈮以外,NbMC膜不包含大量或任何量之過渡金屬。
各NbMC層之厚度可在約20Å至約100Å範圍內。在一些
具體實例中,NMOS堆疊應用中的NbMC層厚度為約10Å至約100Å、約15Å至約75Å或約20Å至約50Å。在一些具體實例中,NbMC層厚度為小於50Å或小於30Å。在其他具體實例中,NbMC層厚度為約5Å至約1000Å、約15Å至約500Å或約20Å至約200Å。在一些具體實例中,NbMC層厚度小於500Å或小於100Å。
如使用四點探針及X射線反射率(X-ray reflectivity;XRR)所量測,NbMC層之薄膜電阻率可在約400μohm-cm至約850μohm-cm範圍內。如使用四點探針及XRR所量測,NbMC層之體電阻率可在約150μohm-cm至約800μohm-cm範圍內。在一些具體實例中,如使用四點探針及XRR所量測,厚度為約10nm之NbMC沉積層之電阻率為約3μohm-cm至約106μohm-cm或約5μohm-cm至約105μohm-cm。在一些具體實例中,如自約10nm厚層所量測,所沉積之NbMC層之電阻率為約50μohm-cm至約104μohm-cm。在一些具體實例中,如自約10nm厚層所量測,所沉積之NbMC層之電阻率小於約5×103μohm-cm、小於(約)1000μohm-cm、小於約400μohm-cm。在一些具體實例中,如自約10nm厚層所量測,所沉積之NbMC層之電阻率小於約200μohm-cm或小於約150μohm-cm。層之電阻率一般變化如下,若層較薄,則在此情況下電阻率通常較高,且在較厚層之情況下,電阻率可較接近體電阻率或體薄層電阻率值。
在本發明之一些具體實例中,可形成其中有效功函數或eWF可為約4.0eV至約4.9eV、約4.1eV至約4.6eV或約4.15eV至約4.3eV之NbMC層。在一些具體實例中,可形成其中有效功函數或eWF可小於約4.5eV、小於約4.4eV、小於約4.3eV或小於約4.25eV之NbMC層。在一些具
體實例中,自例如在測試結構上所形成的約10Å至約100Å層、約15Å至約75Å層、約20Å至約50Å層量測NbMC之功函數。在一些具體實例中,自小於約50Å或小於約30Å厚之層量測NbMC之功函數或eWF。可使用電測試結構量測本文中所提及之功函數及eWF值。
根據其他例示性具體實例,裝置包括一或多個如本文所述之結構。裝置可組態為例如NMOS及/或PMOS裝置以形成CMOS裝置。
前文之概述及下文之實施方式均僅為例示性的及解釋性的,且不會限制本發明。
100:結構
102:基板
104:NbMC層
200:結構
202:基板
204:介電層
206:層
208:第一NbMC層
210:第二NbMC層或第二鈮金屬鹵化物層
212:NbMC層
300:結構
302:基板
304:介電層
306:層
308:第一金屬碳化物層
310:第二金屬碳化物層
312:第三金屬碳化物層
314:金屬碳化物材料
400:結構
402:基板
404:介電層
406:層
408:NbMC材料
410:額外層
412:金屬層
500:裝置
502:基板
504:源極區
506:通道區
508:汲極區
510:介電層
512:層
514:NbMC材料
516:額外層
518:金屬層
520:層
圖1展示包括根據本發明之例示性具體實例之NbMC層的結構。
圖2展示根據本發明之其他例示性具體實例的另一結構。
圖3展示根據本發明之其他例示性具體實例的另一結構。
圖4展示根據本發明之其他例示性具體實例的又一結構。
圖5展示根據本發明之例示性具體實例的裝置。
下文所提供之方法、結構及裝置之例示性具體實例之描述僅為例示性的且僅欲用於說明之目的;以下描述並不意欲限制本發明或申請專利範圍之範圍。此外,具有所述特徵之多個具體實例的敍述並不意欲排除具有額外特徵之其他具體實例或併有所述特徵之不同組合的其他具體實例。
本發明之例示性具體實例係關於在基板上沉積NbMC層之
方法且關於包括一或多個NbMC層之結構及裝置。例示性NbMC層包括鈮、金屬及/或類金屬及碳。金屬可包括一或多種金屬,諸如第13族金屬(例如,鋁);類金屬可包括一或多種類金屬(例如硼)。鈮NbMC膜亦可包括其他元素,諸如氮、氫、痕量之其他材料及類似者。
如下文中所較詳細闡述,例示性NbMC膜適用於用作例如NMOS、PMOS及/或CMOS裝置中的例如可調諧功函數層,且可尤其適用於鰭式場效電晶體裝置及結構。例示性NbMC層尤其為該等應用所期望的,因為該等膜展現相對較低電阻率(例如,如使用4點探針及XRR所量測,約400μohm-cm至約850μohm-cm,或如本文所闡述之其他值),同時仍提供具有所需功函數(例如,eWF在約4.0eV至約4.9eV範圍內或為如本文所闡述之其他值)之結構。此外,與典型地用於形成功函數調諧層之其他膜相比,NbMC層展現相對較高抗氧化性、可調性及良好步階覆蓋(step coverage)。
NbMC層及包括該等層之結構及裝置的特性可視各種因素而定,包括材料之組成,例如,各組分(例如,材料中所存在之金屬及碳)之百分比,以及金屬碳化物材料之形態。舉例而言,可操控組成中的金屬(諸如鋁)或類金屬(諸如硼)之量來調諧NbMC層以獲得所需功函數。
例示性NbMC層包括按原子計至多約30%至約60%或約40%至約50%碳,按原子計約10%至約40%或20%至約30%鈮,及按原子計約10%至約40%或20%至約30%金屬(例如,第13族金屬,諸如鋁)及/或類金屬(例如,硼)。如上所述,層可包括額外元素,諸如微量元素,其可在沉積步驟期間沉積於膜中。在一些具體實例中,NbMC層包含按原子計約
2%至約60%、約5%至約55%、約10%至約50%、約20%至約45%或約35%至約45%碳。在一些具體實例中,NbMC層包含按原子計至多約60%或至多約50%碳。在一些具體實例中,NbMC層包含按原子計至少約2%或至少約20%碳。在一些具體實例中,所沉積之NbMC層包含按原子計約1%至約55%、約20%至約55%、約30%至約50%、約25%至約35%或約27%至約33%鈮。在一些具體實例中,所沉積之NbMC層包含按原子計至少約10%、至少約25%或至少約30%鈮。在一些具體實例中,NbMC層包含按原子計約5%至約75%、約7.5%至約60%、約10%至約45%、約10%至約40%或約10百分比至約20%金屬及/或類金屬(例如,鋁或硼)。在一些具體實例中,所沉積之NbMC層包含按原子計至少約10%、至少約20%、至少約25%或至少約35%金屬(例如,鋁)及/或類金屬(例如,硼)。
在一些應用中,需要包括金屬碳化物膜之結構具有相對較低電阻率、相對較低漏電流及相對較低功函數。已發現,NbMC層可用於形成具有相對較低電阻率、相對較低漏電流及相對較低功函數以及低氧化速率之組合的裝置。
在本文檔之上下文中,「層(layer)」或「膜(film)」可互換使用且可指連續或非連續層或膜。此外,當結構或裝置包括超過一個NbMC及/或金屬碳化物層時,該等NbMC及/或金屬碳化物層可為離散的(例如,形成奈米層合物)或該等層可在層之沉積期間或之後混合在一起。多個NbMC層可具有相同或相似基本組成,例如,包括實質上相同之元素,但由於不同製程、鍵結及/或用於形成相應膜之前驅體,相應膜,且因此總NbMC材料可具有不同特性。藉助於實施例,在一些具體實例中,NbMC層包含金
屬(例如,鋁)及類金屬(例如,硼)。
NbMC材料之沉積方法可用於形成包括NbMC層之結構。該等結構轉而可用於形成包括該等結構之裝置(例如,CMOS及鰭式場效電晶體裝置)。如下文中所較詳細闡述,根據一些實施例,結構包括兩個或大於兩個使用不同製程所沉積之NbMC層。
根據本發明之一些例示性具體實例,一種形成薄膜結構之方法包括提供基板且使用第一循環沉積製程,在該基板之表面上形成包含NbMC之層,其中第一循環沉積製程包含至少一次沉積循環,該循環包含將包含Nb之第一前驅體及包含金屬及/或類金屬及碳之第二前驅體交替地提供至基板之表面。在一些具體實例中,除鈮以外,NbMC膜不包含大量或任何量之過渡金屬。在一些具體實例中,NbMC膜可包含除鈮外之其他過渡金屬。本文所述之循環沉積製程可包括一或多次沉積循環,其中各沉積循環包括:1.將第一前驅體(例如,一或多種鹵化鈮化合物)提供至反應空間;2.吹掃及/或抽空任何過量第一前驅體及/或反應副產物;3.將第二前驅體(例如,一或多種有機金屬化合物,諸如金屬及/或類金屬烴化合物(例如如本文所述))提供至同一或另一反應空間;及4.吹掃及/或抽空任何過量第二前驅體及/或反應副產物。
步驟1-4可稱作循環沉積(例如,原子層沉積(atomic layer deposition;ALD))循環。可按需要使用第一及/或第二製程重複步驟1-4以產生具有所需厚度及所需組成(例如,所需鈮、鋁及/或硼及/或碳濃度)之NbMC薄膜。例如,可重複步驟1-4至多10次、100次或甚至1000次或大於1000次以產生具有例如均勻厚度,且在一個或若干個原子層至100奈米(nm)或大於100nm範圍內之NbMC層。在一些具體實例中,步驟1-4之次序不受限制且步驟3及/或4可在步驟1及/或之前進行。同樣,在一些具體實例中,若需要,可在第二前驅體之後提供第一前驅體且在第一前驅體之前提供第二前驅體。在一些具體實例中,可重複步驟1-4直到NbMC薄膜經形成而具有約1Å至約1000Å、小於約1000Å或小於約500Å之厚度為止。在一些具體實例中,薄膜之厚度小於約300Å,且在其他具體實例中,厚度小於約200Å。在一個具體實例中,厚度在約10Å與約100Å之間。在其他具體實例中,厚度為約20Å至約200Å或約10Å至約50Å或約25Å至40Å。吾人可瞭解,NbMC膜之厚度可視具體應用而變化。作為一實例,對於NMOS閘極應用而言,厚度典型地為約20Å至約500Å或約20Å至約50Å。作為另一實例,對於MIM電容器應用(例如,DRAM、eDRAM等)而言,厚度範圍典型地為約50Å至約200Å。此外,對於其中NbMC膜用以設定快閃記憶體中之功函數的應用而言,厚度可例如在約20Å與約200Å之間。其他例示性膜厚度闡述於本文中。
在一些具體實例中,在反應空間中或藉由ALD型沉積製程使用空間沉積將NbMC膜沉積於基板上,該沉積製程包含至少一次循環,該循環包含:1.使基板暴露於包含Nb之第一氣相前驅體;2.使基板暴露於吹掃氣體中及/或自基板移除過量第一前驅體及反應副產物(若存在);3.使基板暴露於包含鋁及/或硼之第二氣相前驅體;
4.使基板暴露於吹掃氣體中及/或自基板移除過量第二前驅體及反應副產物(若存在);及5.視情況重複暴露及/或移除步驟直到形成所需厚度之NbMC膜為止。
在一些具體實例中,在反應空間中或藉由ALD型沉積製程使用空間沉積將NbMC膜沉積於基板上,該沉積製程包含至少一次循環,該循環包含:1.將包含Nb之第一氣相前驅體沉積於基板上;2.向基板施加吹掃氣體及/或自基板移除過量第一前驅體及反應副產物(若存在);3將包含鋁及/或硼之第二氣相前驅體沉積於基板上;4.向基板施加吹掃氣體及/或自基板移除過量第二前驅體及反應副產物(若存在);及5.視情況重複沉積及施加沖洗氣體及/或移除步驟直到形成所需厚度之NbMC膜為止。
在一些具體實例中,在反應空間中或藉由ALD型沉積製程使用空間沉積將NbAlC膜沉積於基板上,該沉積製程包含至少一次循環,該循環包含:1.使基板暴露於包含NbCl5之第一氣相前驅體;2.使基板暴露於吹掃氣體中及/或自基板移除過量第一前驅體及反應副產物(若存在);3.使基板暴露於包含TTBA之第二氣相前驅體;4.使基板暴露於吹掃氣體中及/或自基板移除過量第二前驅體及反應副產物(若存在);及5.視情況重複暴露及/或移除步驟直到形成所需厚度之NbAlC膜為止。
在一些具體實例中,在步驟3及4之前重複步驟1及2預定次數。舉例而言,可在步驟3及4之前重複步驟1及2五次。作為另一實例,可在步驟3及4之前重複步驟1及2十次。在一些具體實例中,當在步驟3及4之前重複步驟1及2超過一次時,可獨立選擇步驟1中之第一前驅體以在步驟3及4之前的重複步驟中有所不同。在一些具體實例中,在步驟1及2之前重複步驟3及4預定次數。舉例而言,可在步驟1及2之前重複步驟3及4五次。作為另一實例,可在步驟1及2之前重複步驟3及4十次。在一些具體實例中,當在步驟1及2之前重複步驟3及4超過一次時,可獨立選擇步驟3中之第二前驅體以在步驟1及2之前的重複步驟中有所不同。應理解,若需要具有組成均勻性之NbMC膜,則步驟1及2之重複次數不應超過將防止金屬膜實質上滲碳之次數。根據一個實施例,金屬化合物具有低分解溫度且步驟1及2之重複次數不超過一次。在一些具體實例中,步驟1(例如,提供第一前驅體,使基板暴露於第一氣相前驅體,或沉積第一氣相前驅體)包含提供第一前驅體之混合物,諸如包含兩種或大於兩種鈮前驅體之混合物。在一些具體實例中,步驟3(例如,提供第二前驅體,使基板暴露於第二氣相前驅體,或沉積第二氣相前驅體)包含提供第二前驅體之混合物,諸如包含兩種或大於兩種鋁烴前驅體之混合物。
NbMC層之增長速率可視反應條件而變化。在一些具體實例中,增長速率可為約0.01Å/循環至約10.0Å/循環、約0.1Å/循環至約5Å/循環或約0.3Å/循環至約3.0Å/循環。在一些具體實例中,增長速率為約2.5
Å/循環。在一些具體實例中,增長速率可大於約2Å/循環、大於約3Å/循環、大於約5Å/循環或大於約10Å/循環,舉例而言,在其中當脈衝時間增加時,前驅體發生一定分解且沉積速率增加而不實質上受到限制的情況下。如上所述,根據本發明之一些例示性具體實例,一種形成薄膜結構之方法包括使用第一前驅體及第二前驅體沉積第一NbMC層,及使用第三前驅體及第四前驅體沉積第二NbMC層。在此等情況下,例示性沉積循環包括:
第一製程,其包括:1.將第一前驅體(例如,一或多種鹵化鈮)提供至基板之表面;2.吹掃及/或抽空任何過量第一前驅體及/或反應副產物;3.將第二前驅體(例如,一或多種第一金屬(例如,鋁)及/或第一類金屬(例如,硼)烴化合物)提供至基板之表面;及4.吹掃及/或抽空任何過量第二前驅體及/或反應副產物。
第二製程,其包括:5.將第三前驅體(可與第一前驅體相同)提供至基板之表面;6.吹掃及/或抽空任何過量第三前驅體及/或反應副產物;7.將第四前驅體(例如,不同於第二前驅體之鋁及/或硼烴化合物)提供至基板之表面;及8.吹掃及/或抽空任何過量第四前驅體及/或反應副產物。
可在反應空間中或使用空間沉積進行該等步驟。可將第一及/或第二製程重複所需次數且不必為連續性的,且可選擇第一循環與第二循環之比以達成所需組成。此外,儘管結合包括鹵化鈮之第一前驅體加以描述,但可顛倒製程步驟,其中第一製程包括一或多種第一金屬(例如,鋁)
或類金屬(例如,硼)烴化合物,隨後提供含鈮前驅體。
例示性方法可包括形成額外金屬碳化物層或類似層。此外,例示性方法可包括使用一或多種電漿激發物質,其可在步驟期間或之間引入至反應室中。
以下適用於沉積循環中之任一者的一般條件揭示於本文中。反應溫度可在約150℃至約600℃、約200℃至約500℃、約250℃至約450℃、約300℃至約425℃或約350℃至400℃範圍內,或在約325℃至約425℃或約375℃至約425℃或約360℃至約385℃之間。反應室壓力可為約0.5托至約10托或約2托至約7托。可調整壓力以達成所期望之增長速率及可接受之均勻性。
第一前驅體及/或第三前驅體(例如,鈮反應物)脈衝時間可為約0.1秒至約20秒或約1秒至約10秒。第二前驅體及/或第四前驅體(例如,鋁及/或硼烴化合物)脈衝時間可為約0.1秒至約20秒或約0.5秒至約5秒。
吹掃時間通常為約0.1秒至約10秒或約2秒至約8秒。在一些具體實例中,使用約6秒之吹掃時間。然而,在其他具體實例中,可使用較長吹掃時間。在一些具體實例中,用於吹掃第一前驅體、第二前驅體、第三前驅體及/或第四前驅體之吹掃時間為相同的,而在其他具體實例中,吹掃時間針對不同前驅體而有所不同。
惰性吹掃氣體之流速通常為約100sccm至約400sccm。前驅體中之任一者(包括任何載體氣體)之載體流速可為約100sccm至約400sccm。載體氣體較佳為惰性氣體,且可與吹掃氣體相同或不同。吹掃氣體
及載體氣體之流速可部分地基於用於沉積NbMC層之具體反應器來測定。
可在任何適合反應器中進行循環沉積步驟,諸如簇射頭ALD反應器(例如,EmerALD®反應器)或交叉流反應器(例如,Pulsar®反應器)或分批反應器(例如,可購自ASM America或ASM International N.V.之Advance®)。在一些具體實例中,反應器可為空間(例如,ALD)反應器,其中基板或氣體分配系統相對於另一氣體分配系統或基板移動(諸如轉動)。此外,可在無空氣或真空中斷之情況下進行本文所述之步驟中之全部或一些。此外,按通常所理解,如本文所述之製程可包括化學氣相沉積反應,換言之,反應可並非為「純」ALD反應。
第一前驅體可包括,例如一或多種鹵化鈮,諸如一或多種溴化鈮、氯化鈮及/或碘化鈮。藉助於實施例,第一前驅體包括氯化鈮(NbCl5),且在鈮類金屬碳化物之情況下,包括氟化鈮(NbF5)。當第一前驅體包括此等化合物之兩者或大於兩者時,可同時或以單獨脈衝形式將化合物遞送至反應室。
第二前驅體可包括一或多種碳-促成化合物,諸如有機金屬化合物一例如,金屬(例如,鋁)烴化合物或類金屬(例如,硼)烴化合物。金屬或類金屬烴化合物可為例如金屬或類金屬之烷基、烯基或炔基化合物。金屬或類金屬烴化合物可為例如鋁或硼之烷基化合物。在一些具體實例中,金屬烴化合物包含至少一或多個Al-C鍵。在一些具體實例中,金屬烴化合物包含兩個或小於兩個Al-H鍵。在一些具體實例中,金屬烴化合物不包含Al-Al鍵。在一些具體實例中,金屬烴化合物不包含氧及/或鹵化物。在一些具體實例中,金屬烴化合物僅包含鋁、氫及碳且無其他元素。
藉助於實施例,鋁烴化合物選自由以下組成之群中之一或多者:三甲基鋁(TMA)、三乙基鋁(TEA)、氫化二甲基鋁(DMAH)、二甲基乙基胺基鋁烷(DMEAA)、三甲基胺基鋁烷(TEAA)、N-甲基吡咯啶鋁烷(MPA)、三異丁基鋁(TIBA)及三第三丁基鋁(TTBA)。在一些具體實例中,金屬烴化合物包含鍵結至鋁之第三丁基配位體。在一些具體實例中,金屬烴化合物為三第三丁基鋁。在一些具體實例中,類金屬(例如,硼)烴化合物包含烷基硼化合物。在一些具體實例中,硼烴化合物包含至少一或多個B-C鍵。在一些具體實例中,硼烴化合物包含B-H鍵。在一些具體實例中,硼烴化合物不包含B-B鍵。在一些具體實例中,硼烴化合物不包含僅具有硼及氫之化合物。在一些具體實例中,硼烴化合物不包含氧及/或鹵化物。在一些具體實例中,硼烴化合物包含硼、氫及碳且無其他元素。藉助於實施例,硼烴化合物選自由三甲基硼及三乙基硼組成之群中之一或多者。在一些具體實例中,硼烴化合物包含具有1、2或3個C1-C5烴配位體,諸如烷基配位體之硼化合物。當第二前驅體包括此等化合物之兩者或大於兩者時,可同時或以單獨脈衝形式將化合物遞送至反應室。在一些具體實例中,硼烴化合物或鋁烴化合物之純度大於約99%、大於約99.9%、大於約99.99%、大於約99.999%或接近約100%。
如上所述,在一些情況下,方法可包括第二循環沉積製程以形成多個NbMC層。在此等情況下,第二循環沉積製程可包括至少一次沉積循環,該循環包含將包含Nb之第三前驅體及包含金屬及/或類金屬及碳之第四前驅體交替地提供至反應空間或基板表面。第三前驅體可選自上文提及的與第一前驅體有關之化合物之清單。舉例而言,第三前驅體可包括
鹵化鈮,諸如氯化鈮。第四前驅體可選自上文提及的與第二前驅體有關之化合物之清單。在一些情況下,呈以下中之至少一者:第三前驅體與第一前驅體不同且第四前驅體與第二前驅體不同。藉助於具體實施例,使用NbCl5作為第一前驅體及第三前驅體且使用TEA及/或TTBA作為第二前驅體及第四前驅體來形成NbMC膜。
可選擇第二前驅體及/或第四前驅體,例如,金屬(例如,鋁)及/或類金屬(例如,硼)烴化合物以在金屬碳化物膜中達成所需特徵。特徵包括(但不限於)黏著性、電阻率、抗氧化性及功函數。舉例而言,可藉由選擇合適金屬(例如,鋁)及/或類金屬(例如,硼)烴化合物或其他化合物及合適沉積條件來控制金屬碳化物膜中的金屬(例如,鋁)及/或類金屬(例如,硼)之量。藉助於具體實施例,相對於TMA可選擇TEA來達成具體膜中之較高金屬(例如,鋁)濃度。在一些具體實例中,可將不同金屬(例如,鋁)烴化合物用於不同沉積循環中以調節金屬碳化物膜中之金屬(例如,鋁)併入。舉例而言,在沉積NbMC層之沉積製程中,第一循環可使用第一金屬(例如,鋁)化合物,且一或多次第二循環可使用不同金屬(例如,鋁或其他金屬)化合物。
如上所述,吹掃氣體可用於在引入任何其他前驅體之前及/或在暴露或沉積步驟之間抽空第一前驅體或第二前驅體。例示性吹掃氣體包括惰性氣體,諸如氬氣(Ar)及氦氣(He)及氮氣(N2)。
在沉積製程期間亦可包括額外反應物以例如還原所沉積之膜或在膜中併入其他化學物質。在一些具體實例中,額外反應物可為還原劑,諸如由例如原位或遠端電漿產生器產生的電漿激發氫物質。還原劑可
在第一前驅體、第二前驅體及/或其他前驅體引入至反應室中之後脈衝至反應空間(或在反應空間中產生)以還原所沉積之膜。還原劑可用於例如移除膜及/或基板中之雜質,諸如鹵素原子或氧化材料(例如,氧原子)。還原劑亦可用於控制NbMC膜中金屬(例如,鋁)或類金屬(例如,硼)之併入,由此控制/操控膜之特性/特徵。在一些具體實例中,在同一沉積製程中使用熱循環及電漿循環以控制所沉積之膜中的金屬(例如,鋁)濃度。可選擇熱循環與電漿循環之比以達成膜中之所需金屬(例如,鋁)濃度及/或濃度分佈。在一些具體實例中,沉積製程不包含電漿或激發態物質。
如上所述,當使用時,可選擇或操控電漿參數以調節NbMC層之特徵,例如,NbMC膜中所併入之金屬及/或類金屬之量及/或鈮及/或金屬(及/或類金屬)與碳之比率。亦即,在一些具體實例中,可隨電漿參數變化來控制膜組成。除了組成以外,亦可藉由選擇及/或調整合適電漿參數來調整其他膜特徵,諸如結晶度、晶格常數、電阻率及結晶應力。
「電漿參數(plasma parameter)」包括例如射頻功率(RF power)及射頻頻率(RF frequency)。可在一或多次沉積循環中調整一項電漿參數(諸如射頻功率)或多項電漿參數,亦即一組電漿參數(諸如射頻功率及射頻頻率)以達成所需膜特性。可選擇電漿參數以得到具有所需組成之NbMC膜。舉例而言,可按需要選擇射頻功率來影響化學計算量。再舉例而言,可使用具體電漿脈衝持續時間或射頻功率導通時間來獲得所需組成。再舉例而言,可藉由選擇射頻功率、反應物脈衝持續時間及反應物流動速率之組合來達成所需組成。
在一些情況下,選擇電漿參數形成閘電極之一或多個NbMC
層,得到所需結構功函數。此外,可使用電漿形成結構中之一個NbMC層,且與或不與不同的電漿參數設定一起使用以形成該結構內之另一金屬碳化物層。
在一些情況下,電漿激發物質包含還原劑,諸如氫。電漿激發氫物質包括(但不限於)氫基(H*)及氫陽離子(例如,H+、H2+)。電漿激發氫物質可例如由分子氫(H2)或含氫化合物(例如,矽烷、二矽烷、三矽烷、二硼烷、乙烷、乙烯、丙烷、丙烯及類似物)原位或遠端形成。
可藉由選擇參數且使用所選參數藉由具體沉積製程沉積NbMC膜直到形成所需厚度之膜為止來確立沉積參數(諸如電漿、前驅體等)與薄膜組成之間的關係。可隨後確定薄膜組成及特徵,且若需要,可沉積使用不同參數及/或具有不同特性之另一NbMC膜。可根據不同參數重複此製程以建立參數與薄膜組成之間的關係。藉由選擇合適反應條件,可形成具有如所需要之組成及/或特性之化合物膜。
現參考圖式說明包括一或多個NbMC層之例示性結構。圖1展示包括基板102及上覆於基板102之NbMC層104的結構100。
基板102可包括表面上可沉積層之任何材料。基板102可包括塊狀材料,諸如矽(例如,單晶矽),且可包括上覆於該塊狀材料之一或多個層。此外,基板可包括各種特徵,諸如溝槽、通孔、管線及形成於基板之至少一部分內或上的類似物。特徵可具有例如大於或等於5、大於或等於10、大於或等於15或大於或等於20之縱橫比(定義為特徵之高度除以特徵之寬度)。
NbMC層104可按上文所述來形成且可包括一或多個可離散
(例如,形成層合物)或可混合之NbMC膜/層。可使用一或多個製程形成NbMC層104。
圖2展示根據本發明之其他實施例的另一結構200。結構200包括基板202、介電層204、層(例如,蝕刻終止層)206及NbMC層212。在所說明之實施例中,NbMC層212包括第一NbMC層208及第二NbMC層210。
基板202可與基板102相同或相似。
介電層204可包括例如高介電常數(高k)材料。適用於層204之例示性介電材料包括氧化矽、氮化矽及高介電常數材料。在此情形中,高k介電材料之介電常數(k)值大於氧化矽之介電常數值。舉例而言,高k材料之介電常數可大於5或大於10。例示性高k材料包括(但不限於)HfO2、ZrO2、Al2O3、TiO2、Ta2O5、Sc2O3、鑭系氧化物及其混合物、矽酸鹽及諸如經氧化釔穩定化之氧化鋯(yttria-stabilized zirconia;YSZ)、鈦酸鋇鍶(barium strontium titanate;BST)、鈦酸鍶(strontium titanate;ST)、鉭酸鍶鉍(strontium bismuth tantalate;SBT)及鉭酸鉍(bismuth tantalate;BT)的材料。可藉由循環沉積製程,諸如ALD製程沉積高k介電材料。
層206可包括例如TiN,該層可沉積於介電層上方。層206可充當蝕刻終止層、障壁層或類似層。
可按上文所述形成第一NbMC層208及第二NbMC層210。可使用不同製程形成第一NbMC層208及第二NbMC層210,使得兩個層之組成及/或特性有所不同。舉例而言,可使用金屬鹵化物前驅體及第一有機金屬前驅體形成第一NbMC層208,且可使用金屬鹵化物及第二有機金屬前
驅體形成第二鈮金屬鹵化物層210。如上所述,儘管單獨加以說明,但第一NbMC層208與第二NbMC層210可在沉積第二金屬碳化物層210期間或之後進行混合。此外,第一及/或第二NbMC層可為連續性的或非連續性的。最後,儘管用兩個NbMC層208、210加以說明,但根據本發明之其他結構包括基板202、層204-206及單一NbMC層。
圖3展示根據本發明之例示性具體實例的另一結構300。結構300包括基板302、介電層304、層306及金屬碳化物材料314,該金屬碳化物材料314包括第一金屬碳化物層308、第二金屬碳化物層310及第三金屬碳化物層312。基板302、介電層304及層306可與基板102、介電層204及層206相同或相似。在所說明之實施例中,金屬碳化物材料314包括三個層。根據本發明之例示性具體實例,金屬碳化物材料314之相鄰層為不同的,例如,該等相鄰層由不同製程形成及/或具有不同組成。舉例而言,第一金屬碳化物層308可包括第一過渡金屬(例如,鈦)、碳及鋁;第二金屬碳化物層310可包括鈮、碳及鋁,且第三金屬碳化物層312可包括第一過渡金屬、碳及鋁。第一、第二及第三金屬碳化物層可為離散層或該等層之兩者或大於兩者可混合。此外,各層可為連續性的或非連續性的。此外,儘管用三個金屬碳化物層加以說明,但金屬碳化物材料314及/或結構300可包括額外金屬碳化物層以及在相似結構中所發現之其他層。
圖4展示根據本發明之例示性具體實例的另一結構400。結構400包括基板402、介電層404、層406、NbMC材料408、額外層410及金屬層412。基板402、介電層404、層406及NbMC404可與上文結合圖1至圖3所述之各別層相同或相似。舉例而言,NbMC材料404可包括一或多個NbMC層或一或多個與其他金屬碳化物層混合或層合之NbMC層。額外層410可與層306相同或相似。金屬層412可包括任何適合之金屬,諸如鎢(W)。
圖5展示根據本發明之各種具體實例的裝置500。本發明之範圍內的其他裝置可包括其他結構,諸如本文所述之結構。在所說明之實施例中,裝置500包括基板502,其具有源極區504、汲極區508及在其之間的通道區506。
裝置500亦包括介電層510、層512、NbMC材料514、視情況選用之額外層516及視情況選用之金屬層518。介電層510、層512、NbMC材料514、額外層516及金屬層518可與上文結合結構100-400所述之各別層相同或相似。
裝置500可組態為NMOS或PMOS裝置且可形成CMOS裝置之一部分。可如本文所述調諧裝置500之功函數以促進形成NMOS及CMOS裝置。
應理解,本文所述之組態及/或途徑在本質上為例示性的,且此等特定具體實例或實施例不應視為具有限制性意義。在例示性方法之情況下,本文所述之特定例程或步驟可表示多種處理策略中之一或多者。因此,所說明之各種動作可以所說明之順序執行,以其他順序執行,同步執行或在一些情況下可加以省略。裝置500亦包括在層520之內之介電層510、層512、NbMC材料514、視情況選用之額外層516及視情況選用之金屬層518。
本發明之標的物包括本文所揭示之各種製程、層、結構及裝
置,及其他特徵、功能、動作及/或特性,以及其任何及所有等效物的所有新穎且非顯而易見的組合及子組合。
100‧‧‧結構
102‧‧‧基板
104‧‧‧NbMC層
Claims (24)
- 一種形成薄膜結構之方法,該方法包含以下步驟:在反應空間內提供基板;及使用第一循環沉積製程在該基板之表面上形成包含NbAlC之層,其中該第一循環沉積製程包含至少一個沉積循環,該循環包含使該基板暴露於包含Nb之第一前驅體及包含鋁及碳之第二前驅體,其中該包含NbAlC之層的組成包含約30原子%至約60原子% C、約10原子%至約40原子% Nb及約10原子%至約40原子% Al,其中該包含NbAlC之層的厚度小於50Å,及其中該結構(包含該包含NbAlC之層)的有效功函數小於4.4eV。
- 如申請專利範圍第1項之方法,其中該第一前驅體包含鹵化鈮。
- 如申請專利範圍第2項之方法,其中該鹵化鈮包含氯化鈮。
- 如申請專利範圍第1項之方法,其中該第一循環沉積製程包含原子層沉積循環製程。
- 如申請專利範圍第1項之方法,該方法進一步包含將一或多種電漿激發物質引入至該反應空間中之步驟。
- 如申請專利範圍第1項之方法,其中該第二前驅體包含有機金屬前驅體。
- 如申請專利範圍第1項之方法,其中該第二前驅體包含三乙基鋁(TEA)。
- 如申請專利範圍第1項之方法,其中該第二前驅體包含三第三丁基鋁(TTBA)。
- 如申請專利範圍第1項至第8項中任一項之方法,該方法進一步包含使用包含至少一次沉積循環之第二循環沉積製程,該循環包含使該基板交替地暴露於包含Nb之第三前驅體及包含金屬及碳之第四前驅體,其中呈以下中之至少一者:該第三前驅體與該第一前驅體不同且該第四前驅體與該第二前驅體不同。
- 如申請專利範圍第1項至第8項中任一項之方法,其中該NbAlC層為NMOS金屬閘極結構之一部分且該結構中的該金屬閘極之功函數小於約4.4eV。
- 如申請專利範圍第1項至第8項中任一項之方法,其中該沉積循環進一步包含使該基板暴露於吹掃氣體及/或自該基板移除過量第一前驅體及反應副產物(若存在);及使該基板暴露於該吹掃氣體及/或自該基板移除過量第二前驅體及反應副產物(若存在)。
- 如申請專利範圍第1項至第8項中任一項之方法,其中該NbAlC層包含按原子計至少約20%鋁。
- 如申請專利範圍第1項至第8項中任一項之方法,其中該NbAlC層電阻率小於約1000μohm-cm。
- 如申請專利範圍第1項至第5項中任一項之方法,其中該第二前驅體包含鋁烴化合物,其包含C2-C4烷基配位體。
- 如申請專利範圍第1項至第8項中任一項之方法,該方法進一步包含在沉積該NbAlC層之前沉積包含TiN之層。
- 如申請專利範圍第1項至第8項中任一項之方法,該方法進一步包含使該基板交替地暴露於包含Nb之第一前驅體及包含鋁及碳之第二前 驅體。
- 一種形成薄膜結構之方法,該方法包含以下步驟:在反應空間內提供基板;及使用循環沉積製程在該基板之表面上形成包含NbMC之層,其中M包含金屬及類金屬中之一或多者,其中該循環沉積製程包含至少一次沉積循環,該循環包含將包含Nb之第一前驅體及包含金屬及類金屬中之一或多者及碳之第二前驅體交替地提供至該基板之表面,其中該包含NbMC之層的組成包含約30原子%至約60原子% C、約10原子%至約40原子% Nb及約10原子%至約40原子% M其中該包含NbMC之層的厚度小於50Å,及其中該結構(包含該包含NbMC之層)的有效功函數小於4.4eV。
- 如申請專利範圍第17項之方法,其中該循環沉積循環在反應空間中進行。
- 如申請專利範圍第17項之方法,其中該循環沉積循環使用空間沉積反應器進行。
- 一種薄膜結構,其包含:基板;及上覆於該基板所形成的包含NbMC之層,其中M表示金屬及類金屬中之一或多者,其中該包含NbMC之層包含約10原子%至約40原子% Nb、約10原子%至約40原子% M及約30原子%至約60原子% C,其中該包含NbMC之層的厚度小於50Å,及 其中該結構(包含該包含NbMC之層)的有效功函數小於4.4eV。
- 如申請專利範圍第20項之結構,其中該結構進一步包含上覆於該包含NbMC之層的包含TiN之層。
- 如申請專利範圍第20項之結構,其中M包含鋁。
- 如申請專利範圍第20項至第22項中任一項之結構,其中該包含NbMC之層的電阻率小於約1000μohm-cm。
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