TW202007792A - 多端口氣體注入系統及包括該系統之反應器系統 - Google Patents

多端口氣體注入系統及包括該系統之反應器系統 Download PDF

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TW202007792A
TW202007792A TW108126178A TW108126178A TW202007792A TW 202007792 A TW202007792 A TW 202007792A TW 108126178 A TW108126178 A TW 108126178A TW 108126178 A TW108126178 A TW 108126178A TW 202007792 A TW202007792 A TW 202007792A
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injection system
coupled
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gas injection
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馬明陽
蘇俊威
亞歷山德羅斯 迪摩斯
林興
Ｓ 金
葛雷葛瑞 麥可 巴萊特
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荷蘭商Ａｓｍ 智慧財產控股公司
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Abstract

本揭示內容揭示一種氣體注入系統、一種包括該氣體注入系統之反應器系統、以及使用該氣體注入系統及反應器系統之方法。該氣體注入系統可用於氣相反應器系統中以獨立地監測及控制耦接至一反應腔室之一氣體注入系統之複數個通道中的氣體流動速率。

Description

多端口氣體注入系統及包括該系統之反應器系統
本揭示內容大致係關於氣相反應器及系統。更確切地說，本揭示內容係關於用於將氣體引入反應腔室中之氣體注入系統、包括該等氣體注入系統之反應器及反應器系統，以及其使用方法。
氣相反應器，諸如化學氣相沉積(CVD)、電漿增強型CVD (PECVD)及原子層沉積(ALD)反應器可用於包括在基板表面上沉積及蝕刻材料的各種應用中。舉例而言，氣相反應器可用於在基板上沉積及/或蝕刻層，以形成半導體裝置、平板顯示裝置、光伏打裝置、微機電系統(MEMS)等等。
典型的氣相反應器系統包括一反應器，該反應器包括一反應腔室、以流體方式耦接至該反應腔室之一或多個前驅體及/或反應物氣體源、以流體方式耦接至該反應腔室之一或多個載氣及/或沖洗氣體源、將氣體(例如前驅體/反應物氣體及/或載氣/沖洗氣體)遞送至該反應腔室之一氣體注入系統、及以流體方式耦接至該反應腔室之一排氣源。
一般而言，希望在整個基板表面上具有均勻膜性質(例如膜厚度及電阻率)及/或對於任何期望的變化進行控制。已開發出各種氣體注入系統來嘗試達成均勻或可控制的膜性質。舉例而言，已開發出包括安置於反應腔室內或附近之多個端口或噴嘴的氣體注入系統來提高整個基板表面上膜性質之均勻性。在此等例子中，到各端口之流動速率可使用針閥進行調整，例如手動調整。雖然此技術對於一些應用相當有效，但此等系統可能無法適當地解決膜性質的期望均勻性及/或可控制性，尤其是在基板邊緣處或靠近基板邊緣處。另外，使用針閥會產生不期望的顆粒 - 例如，由於閥組件之機械磨蝕產生的顆粒。
隨著形成於基板表面上之特徵的尺寸減小，控制諸如膜厚度及電阻率之類膜性質變得愈來愈重要。此外，可能希望獨立地調節膜性質；例如，獨立地調節使用氣相反應器沉積之層，諸如使用此等反應器生長之磊晶層中之膜厚度均勻性及/或電阻率。因此，需要改良之氣體注入系統、包括改良之氣體注入系統的反應器系統、及使用該等氣體注入及反應器系統之方法。
本揭示內容之各種具體例係關於氣體注入系統、包括氣體注入系統之反應器及反應器系統，以及使用該等氣體注入系統、反應器及反應器系統之方法。雖然於下文更詳細地論述本揭示內容之各種具體例解決先前氣體注入系統、反應器及系統之缺點的方式，但一般而言，本揭示內容之各種具體例提供氣體注入系統，該等系統可提供對通向氣體注入系統之個別通道之氣體(例如氣體混合物)流動速率的改良之監測及控制，提供對通向氣體注入系統之一或多個通道的氣體之流量及/或流量比的動態反饋，及/或提供在氣體注入系統之每一通道中的氣體之流動速率及/或流量比的改良之穩定性。另外，例示性的系統及方法容許微調被提供至反應腔室及/或基板表面的前驅體及反應物。此外，例示性的氣體注入系統可以容許獨立調節諸如膜厚度、膜厚度均勻性、膜電阻率、組成概況等膜性質。例示性的氣體注入系統亦可用於將壓差維持在所需水準。
根據本揭示內容之例示性具體例，一種氣體注入系統包括第一氣體供給管線；耦接至該第一氣體供給管線之第一氣體歧管，其中該第一氣體歧管包含複數個第一氣體出口；複數個第一質量流量感測器，其中該複數個第一氣體流量感測器中之至少一個耦接至該複數個第一氣體出口中之每一個；複數個第一氣體閥，其中該複數個第一氣體閥中之至少一個耦接至該複數個第一氣體流量感測器中之每一個的出口；及控制器，其(電)耦接至該複數個第一質量流量感測器及該複數個第一氣體閥以控制穿過複數個第一氣體通道中之每一個的第一氣體之所需流量比。例示性的氣體注入系統亦可包括第二氣體供給管線；耦接至該第二氣體供給管線之第二氣體歧管，其中該第二氣體歧管包含複數個第二氣體出口；複數個第二氣體流量感測器，其中該複數個第二氣體流量感測器中之至少一個耦接至該複數個第二氣體出口中之每一個；複數個第二氣體閥，其中該複數個第二氣體閥中之至少一個耦接至該複數個第二氣體流量感測器中之每一個的出口；且其中控制器(例如該耦接至該複數個第一質量流量感測器及該複數個第一氣體閥之控制器）耦接至該複數個第二質量流量感測器及該複數個第二氣體閥以控制穿過複數個第二氣體通道中之每一個的第二氣體之所需流量比。根據本揭示內容之氣體注入系統可類似地包括如結合第一及第二氣體管線所描述之三個或更多個氣體管線及相應組件且可使用一或多個如本文中所描述之控制器。使用如本文中所描述之流量控制器可容許獨立控制至氣體注入系統之一或多個通道(於下文更詳細地描述)的氣體流動速率，其繼而可容許微調使用該等系統及/或反應物/前驅體濃度分佈於反應腔室內沉積之膜的各種性質。
根據本揭示內容之額外例示性具體例，氣相反應器系統包括一或多個如本文中所描述之氣體注入系統。例示性的系統亦可包括耦接至反應腔室的排氣(例如真空)源、以流體方式耦接至一或多個第一氣體通道的第一氣體源、及以流體方式耦接至一或多個第二氣體通道的第二氣體源。例示性的系統亦可包括額外氣體(例如摻雜劑源)及/或排氣源。
根據本揭示內容之又其他例示性具體例，一種將氣相反應物提供至基板表面之方法包括以下步驟：提供氣相反應器系統，提供如本文所描述之氣體注入系統，於該反應器系統之反應腔室內提供基板，及使該基板暴露於來自第一氣體源之第一氣體及來自第二氣體源之第二氣體。例示性的方法可進一步包括自動地調整耦接至一或多個第一氣體通道之一或多個閥及/或自動地調整耦接至一或多個第二氣體通道之一或多個閥。例示性的方法亦可包括以下步驟：提供來自第一氣體源之第一氣體及來自第二氣體源之第二氣體中之一或多種的不對稱設置，以例如調節(例如獨立地調節)膜性質，諸如整個基板表面(包括基板之邊緣區域)之膜厚度、膜厚度均勻性及膜電阻率等等。
以下提供的例示性具體例之說明僅係例示性的且僅係意欲用於說明之目的；以下說明不意欲限制本揭示內容或申請專利範圍之範圍。此外，引述具有所述特徵之多個具體例不意欲排除具有額外特徵之其他具體例或納入所述特徵之不同組合的其他具體例。
本揭示內容大致係關於氣體注入系統、包括氣體注入系統之反應器及反應器系統、以及使用該等氣體注入系統及系統之方法。本文所描述的氣體注入系統、包括氣體注入系統之反應器及反應器系統可用於加工基板，諸如半導體晶圓。舉例而言，本文所描述之系統可用於在基板表面上形成或生長磊晶層(例如雙組分及/或摻雜半導體層)。例示性的系統可進一步用於將蝕刻化學物質提供至基板表面。舉例而言，例示性的系統可以在沉積(例如生長)製程期間提供兩種或兩種以上氣體之混合物(例如在本文中統稱為混合物或僅稱為氣體或第一氣體)及/或在蝕刻製程期間提供兩種或兩種以上氣體的混合物(例如在本文中統稱為混合物或僅稱為氣體或第二氣體)。沉積及蝕刻氣體皆可用於在基板上生長磊晶膜。
如本文所使用，術語「前驅體」及/或「反應物」可以指參與化學反應之一或多種氣體/蒸氣或參與反應之氣相物質的來源。化學反應可在氣相中及/或在氣相與基板表面及/或基板表面上的物種之間發生。
如本文所使用，「基板」係指具有材料可沉積於其上之表面的任何材料。基板可包括塊狀材料諸如矽(例如單晶矽)或可包括覆蓋塊狀材料的一或多個層。此外，基板可包括各種表面形態，諸如形成於基板層之至少一部分之內或之上的溝槽、通孔、線條等等。
如下文更詳細地陳述，使用如本文中所描述之例示性氣體注入系統係有利的，因為其容許獨立地計量及控制流過該等氣體注入系統之各種通道且隨後流至反應腔室之輸入位點的氣體(例如氣體混合物)流量。氣體流量之獨立控制可繼而容許獨立調節使用包括該氣體注入系統之反應器系統所形成之膜的膜性質。舉例而言，例示性氣體注入系統可用於獨立地調節例如基板上之磊晶形成層的電阻率及膜厚度（或厚度均勻性）。另外或替代地，例示性氣體注入系統可用於補償原本將於反應器系統之反應腔室內發生之氣體流量變化、耗損率變化、自摻雜或其組合。舉例而言，在各種輸入位點處的獨立氣體流量控制可用於補償原本可能會於一或多個膜性質中引起非所需之不均勻性的邊緣效應及/或旋轉基板。另外，例示性氣體注入系統可提供每一通道中氣體流量之即時反饋。例示性氣體注入系統可擴充至任何所需數目之通道且可與氣體混合物一起使用，同時維持所希望的流動速率精確性及控制(例如獨立於氣體混合物之組成)。此外，必要時，本揭示內容之例示性氣體注入系統可用於相對較高的氣體流動速率(例如大於每分鐘兩標準公升穿過各通道的氮氣)及/或可在相對較高(例如接近大氣)壓力下操作。本文所描述的系統及方法之該等及其他特徵特別適用於在基板上沉積高品質磊晶層。
現在轉到圖式，圖1繪示例示性反應器系統100。反應器系統100可用於各種應用，諸如，比方說，化學氣相沉積(CVD)、電漿增強型CVD (PECVD)、原子層沉積(ALD)、清潔製程、蝕刻製程等等。雖然例示性具體例係結合磊晶反應器系統於下文說明，但除非另外陳述，否則具體例及發明不因此受限。
在所繪示之實施例中，反應器系統100包括可選擇之基板處置系統102、反應腔室104、氣體注入系統106及設置於反應腔室104與基板處置系統102之間的可選擇之壁108。系統100亦可包括第一氣體源112、第二氣體源114及排氣源110。雖然被繪示為具有兩個氣體源112、114，但反應器系統100可包括任何適宜數目的氣體源。氣體源112、114可包括，例如，前驅體氣體，諸如三氯矽烷、二氯矽烷、矽烷、二矽烷及三矽烷；摻雜劑源，諸如包含As、P、C、Ge及B之氣體；及氣體之混合物，包括氣體與諸如氫氣、氮氣、氬氣等等之載氣的混合物。另外或替代地，第一氣體源112及第二氣體源114其中一者可包括蝕刻劑，諸如含氯氣體，諸如氯化氫。舉例而言，第一氣體源112及/或第二氣體源114包含氣體混合物。反應器系統100可包括任何適宜數目的反應腔室104及基板處置系統102。舉例而言，反應器系統100之反應腔室104包括交叉流、冷壁磊晶反應腔室。包括水平流動反應器之例示性反應器系統係獲自ASM之一系統(例如ASM Intrepid®反應器系統)。
在反應器系統100之操作期間，基板，諸如半導體晶圓(未繪示)自例如基板處置系統102轉移至反應腔室104。一旦基板轉移至反應腔室104，來自氣體源112、114之一或多種氣體，諸如前驅體、摻雜劑、載氣及/或沖洗氣體即經由氣體注入系統106引入至反應腔室104中。如下文更詳細地陳述，氣體注入系統106可用於在基板加工期間計量及控制來自第一氣體源112及第二氣體源114之一或多種氣體的氣體流量並將所需流量的該一或多種氣體提供至反應腔室104內之多個位點。
圖2及3示意性地繪示根據本揭示內容之例示性具體例的適合用作氣體注入系統106的氣體注入系統200。氣體注入系統200包括耦接至第一氣體源203之第一氣體供給管線202，該第一氣體源可與氣體源112相同或類似；及耦接至第二氣體源205之第二氣體供給管線204，該第二氣體源可與氣體源114相同或類似。當提到氣體注入系統200之氣體管線及流體組件時，術語「耦接」係指以流體方式耦接，且除非另外陳述，否則該等管線或組件無需直接地以流體方式耦接，而是氣體注入系統200可包括其他介入元件，諸如連接器、閥、計量器等等。
繼續參照圖2及3，氣體注入系統200包括耦接至第一氣體供給管線202之第一氣體歧管206及耦接至第二氣體供給管線204之第二氣體歧管208。第一氣體歧管206包括複數個第一氣體出口210-218。類似地，第二氣體歧管208包括複數個第二氣體出口220-228。第一氣體歧管206及第二氣體歧管208係經組構以自一或多個氣體管線(例如第一及第二氣體管線202、204)接收氣體及將氣體分佈至一或多個通道中，該一或多個通道分別部分地由第一氣體出口208-218及第二氣體出口220-228界定。在所繪示之實施例中，來自第一氣體源203及第二氣體源205之第一及第二氣體流分別被分入五個氣體通道中。雖然被繪示為各具有五個第一氣體出口208-218及第二氣體出口220-228，但根據本揭示內容之氣體注入系統可包括對應於各別氣體之通道數目的任何適宜數目之第一、第二及/或其他氣體出口。舉例而言，例示性系統對於每一氣體可包括例如約1-10個通道或包括5、6、7、9或更多個通道。如所繪示，第一氣體歧管206及/或第二氣體歧管208可包括環形組構，有助於穿過氣體通道之均勻流量分佈。在所繪示之實施例中，第一氣體通道與第二氣體通道交替地彼此鄰近。然而，情況不必如此。
如上所指出，第一氣體源203及/或第二氣體源205可為兩種或兩種以上氣體之混合物。在此種情況中，一或多種氣體，又可包括氣體混合物或不包括氣體混合物，可經由流量控制器207-213自其他源(未示出)供應至第一氣體源203及/或第二氣體源205。當在流量控制器207-213上游之源氣體不為氣體混合物時，流量控制器207-209宜為質量流量控制器。
氣體注入系統200另外包括耦接至第一及第二氣體出口210-228之複數個流量感測器230-248。在所繪示之實施例中，各第一及第二氣體出口210-228耦接至單個流量感測器230-248。然而，在一些情況中，可能希望有一些氣體出口未耦接至流量感測器及/或有一些氣體出口係耦接至多於一個流量感測器。
流量感測器230-248可用於監測氣體混合物之流動速率並例如使用圖形使用者介面將每一通道之即時及/或歷史流動速率資訊提供給使用者。另外或替代地，流量感測器230-248可耦接至控制器(例如控制器302)及耦接至氣體閥250-258，以提供穿過氣體閥250-268的受控之氣體流動速率。藉由將至少一個流量感測器230-248置放於每一氣體通道中，穿過每一通道之氣體的流動速率(例如相對流量比)可進行獨立地量測及控制，不管氣體組成如何。例示性流量感測器230-248可為或包括熱質量流量感測器。
氣體閥250-268可包括用於計量氣體流量之任何適宜裝置。根據本揭示內容之各種具體例，氣體閥250-258各自包含比例閥，諸如電磁閥、氣動閥或壓電閥。可選擇具有相對較高(例如0.021-0.14)流量係數(Cv)之閥以減少下游阻塞(chocking)。如下文更詳細地所論述，氣體閥250-268可合意地在閉環控制下操作，且亦能夠(例如另外地)在開環控制下操作。
流量感測器230-248及氣體閥250-268可最初形成例如質量流量控制器(例如現成的質量流量控制器)之一部分，其中該閥之控制功能被控制器302替代。舉例而言，流量計230及氣體閥250可形成質量流量控制器270之一部分，該質量流量控制器係設定成以開環模式操作，且其中控制器302提供對閥250-268之閉環控制。流量感測器232-248及氣體閥252-258可類似地形成或作為質量流量控制器272-288之一部分。此組構容許以標準反應器組構實施及/或用於易於得到的質量流量控制器以及流量感測器及閥。
氣體閥250-268可經由凸緣292耦接至反應腔室290。額外管線(例如管道)及適宜連接器可用於將氣體閥250-268耦接至凸緣292。例示性凸緣292包括凸緣氣體通道以維持通道直至各別氣體離開而進入反應腔室290中為止。適合用作凸緣290之例示性凸緣揭示於2014年3月18日提出申請之美國申請案序號14/218,690，標題「氣體注入系統，包括該系統之反應器及其使用方法(GAS INJECTION SYSTEM, REACTOR INCLUDING THE SYSTEM, AND METHODS OF USING THE SAME)」，以其內容不與本揭示內容相衝突之程度，引用該等內容併入本文。
氣體注入系統200可選擇性地包括水分樣品面板。水分樣品面板可包括例如一或多個壓力傳感器、氣動閥、及/或限制器。例示性的水分樣品面板揭示於2018年6月4日提出申請之美國申請案序號15/997,445，標題「氣體分佈系統及包括該系統之反應器系統(GAS DISTRIBUTION SYSTEM AND REACTOR SYSTEM INCLUDING SAME)」中，以其內容不與本揭示內容相衝突之程度，引用該等內容併入本文。
反應腔室290可由例如石英形成。在基板加工期間反應腔室290內之例示性操作壓力可在例如約0.5毫托(mTorr)至約780托之範圍內。舉例而言，壓力可在約2毫托至約780托之範圍內。根據本揭示內容之例示性具體例，系統200可在此類壓力範圍內提供每一通道內所需之穩定、獨立的流量控制。
控制器302可經組構以執行如本文中所描述之各種功能及/或步驟。控制器302可包括一或多個微處理器、記憶元件、及/或切換元件以執行各種功能。雖然被繪示為單個單元，但如圖5中所繪示，控制器302可替代地包含多個裝置。舉例而言，控制器302可用於控制複數個氣體通道中來自第一氣體源203及/或第二氣體源205之氣體的流量。控制器302可經組構以使用例如同一硬體來提供開環及/或閉環流量控制。特定而言，控制器302可經組構以於耦接至各別源之各通道中提供各別氣體(例如來自第一氣體源203或第二氣體源205)之總流量的期望比率。根據本揭示內容之各種實施例，控制器302包括比例積分微分(PID)控制器，其容許獨立地閉環控制本文所描述之各種可控制閥，包括氣體閥250-268。利用PID閉環控制，系統200當於氣體源之間切換時及/或當操作壓力相對較高(例如接近大氣壓)時可動態地調整至設定點之一或多個(例如所有)氣體通道中之流量及/或提供至反應腔室290之氣體之穩定、尤其是起始的流動速率。閉環控制容許在多種壓力範圍內，諸如本文所闡述之該等範圍內自動且穩定地控制穿過每一通道之流動速率。閉環控制還容許在無工具匹配情況下進行控制，而工具匹配通常係傳統系統所需的。舉例而言，使用PID控制，可選擇各受控閥的起始設定點。由耦接至可控制閥之各流量感測器之輸出得到的流動速率反饋接著可結合控制器302之PID控制器使用以控制各控制閥的期望設定點(即，流動速率)。
圖4繪示使用典型質量流量控制器控制穿過氣體注入系統200之通道的流量，同時更動該質量流量控制器之控制功能的控制器302之一部分。起初，基於每一通道之流量比設定點(例如由製程配方得到)，控制器302首先將確定具有最高流量比之通道，並將其相關控制閥設定至一設定點，典型地低於100%打開，諸如90%常開。接下來，穿過每一通道之即時氮等效物流動速率係使用各別流量計量測。在所繪示之實施例中，流量係藉由如下5個流量計量測：1、2、3、4、5。接著，總流動速率係藉由如下對穿過每一通道之流動速率求和來計算：
Figure 02_image001
。接著，穿過每一通道之實際流量比計算如下：
Figure 02_image003
、
Figure 02_image005
、
Figure 02_image007
、
Figure 02_image009
、
Figure 02_image011
；實際比率以量測值可顯示於圖形使用者介面上。除具有最高流動速率之通道外，亦將其餘即時流量比與其各別起始設定點相比較。接著，以流量比反饋與流量比設定點之間的差異計算每一閥之誤差函數(α）。每一通道之誤差函數被用於調節控制器302中之PID控制器以控制每一通道/閥。PID輸出將是用於控制每一通道中之各別閥的命令信號。
圖5更詳細地繪示控制器302。在所繪示之實施例中，控制器302包括主控制器502及可程式化邏輯控制器(PLC) 504。主控制器502可用於將起始設定點值發送至閥250-268(例如在控制器270-288內)並接收來自流量計230-248之反饋。在此組構中，主控制器502充當主控控制器且PLC控制器504充當主控制器502之從屬裝置。PLC控制器504執行(例如使用嵌入之韌體)以上關於圖4所描述的PID及控制功能。PLC 504亦可用於以開環組構控制閥250-268，例如以容許快速響應、穩定的開環控制。感測器230-248、閥250-268(例如經由控制器270-288)、PLC 504與主控制器502之間的通信可為數位式的且可使用適宜電纜506、508傳輸。
雖然本文中陳述本揭示內容的例示性具體例，但應明瞭本揭示內容並不因此受限。舉例而言，儘管氣體注入及反應器系統係結合各種特定組構描述，但本揭示內容未必限於此等實施例。可對本文中陳述的系統及方法進行各種修改、變化及增進，而不脫離本揭示內容之精神及範圍。
本揭示內容之標的包括各種系統、組件及組構、以及本文中所揭示之其他特徵、功能、動作、及/或性質及其任何及所有等效物的所有新穎且非顯而易見的組合及子組合。
100‧‧‧反應器系統 102‧‧‧基板處置系統 104‧‧‧反應腔室 106‧‧‧氣體注入系統 108‧‧‧壁 110‧‧‧排氣源 112‧‧‧第一氣體源 114‧‧‧第二氣體源 200‧‧‧氣體注入系統 202‧‧‧第一氣體供給管線 203‧‧‧第一氣體源 204‧‧‧第二氣體供給管線 205‧‧‧第二氣體源 206‧‧‧第一氣體歧管 207‧‧‧流量控制器 208‧‧‧第二氣體歧管/第一氣體出口/流量控制器 209‧‧‧流量控制器/第一氣體出口 210‧‧‧流量控制器/第一氣體出口 211‧‧‧流量控制器/第一氣體出口 212‧‧‧流量控制器/第一氣體出口 213‧‧‧流量控制器/第一氣體出口 214‧‧‧第一氣體出口 216‧‧‧第一氣體出口 218‧‧‧第一氣體出口 220‧‧‧第二氣體出口 222‧‧‧第二氣體出口 224‧‧‧第二氣體出口 226‧‧‧第二氣體出口 228‧‧‧第二氣體出口 230‧‧‧流量感測器/流量計 232‧‧‧流量感測器 234‧‧‧流量感測器 236‧‧‧流量感測器 238‧‧‧流量感測器 240‧‧‧流量感測器 242‧‧‧流量感測器 244‧‧‧流量感測器 246‧‧‧流量感測器 248‧‧‧流量感測器 250‧‧‧氣體閥 252‧‧‧氣體閥 254‧‧‧氣體閥 256‧‧‧氣體閥 258‧‧‧氣體閥 260‧‧‧氣體閥 262‧‧‧氣體閥 264‧‧‧氣體閥 266‧‧‧氣體閥 268‧‧‧氣體閥 270‧‧‧質量流量控制器 272‧‧‧質量流量控制器 274‧‧‧質量流量控制器 276‧‧‧質量流量控制器 278‧‧‧質量流量控制器 280‧‧‧質量流量控制器 282‧‧‧質量流量控制器 284‧‧‧質量流量控制器 286‧‧‧質量流量控制器 288‧‧‧質量流量控制器 290‧‧‧反應腔室 292‧‧‧凸緣 302‧‧‧控制器 502‧‧‧主控制器 504‧‧‧可程式化邏輯控制器 506‧‧‧電纜 508‧‧‧電纜 Q1‧‧‧流量計 Q2‧‧‧流量計 Q3‧‧‧流量計 Q4‧‧‧流量計 Q5‧‧‧流量計
當結合以下說明圖式思考時，可藉由參照實施方式及申請專利範圍而獲得對本揭示內容之例示性具體例的更完整理解。
圖1繪示根據本揭示內容之至少一個例示性具體例之反應器系統。
圖2示意性繪示根據本揭示內容之至少一個例示性具體例之氣體注入系統。
圖3示意性繪示根據本揭示內容之至少一個例示性具體例之氣體注入系統的另一個圖。
圖4示意性繪示根據本揭示內容之至少一個例示性具體例的控制系統之一部分。
圖5示意性繪示根據本揭示內容之至少一個例示性具體例的控制系統。
應理解，圖式中之元件係為簡單及清楚起見而展示且未必按比例繪製。舉例而言，圖中一些元件之尺寸可能相對於其他元件放大以幫助增進對所說明的本揭示內容之具體例的理解。

Claims (20)

  1. 一種氣體注入系統，其包括： 一第一氣體供給管線； 一第一氣體歧管，經耦接至該第一氣體供給管線，其中該第一氣體歧管包括複數個第一氣體出口； 複數個第一質量流量感測器，其中該複數個第一氣體流量感測器中之至少一個耦接至該複數個第一氣體出口中之每一個； 複數個第一氣體閥，其中該複數個第一氣體閥中之至少一個耦接至該複數個第一氣體流量感測器中之每一個的一出口；及 一控制器，經耦接至該複數個第一質量流量感測器及該複數個第一氣體閥以控制穿過複數個第一氣體通道中之每一個的一第一氣體之所需流量比。
  2. 如請求項1之氣體注入系統，其中，該複數個第一質量流量感測器中之每一個被組構用於量測穿過各第一氣體通道之該第一氣體的相對流量。
  3. 如請求項1之氣體注入系統，其中，該第一氣體包括一氣體混合物。
  4. 如請求項1之氣體注入系統，其進一步包括： 一第二氣體供給管線； 一第二氣體歧管，經耦接至該第二氣體供給管線，其中該第二氣體歧管包括複數個第二氣體出口； 複數個第二氣體流量感測器，其中該複數個第二氣體流量感測器中之至少一個耦接至該複數個第二氣體出口中之每一個； 複數個第二氣體閥，其中該複數個第二氣體閥中之至少一個耦接至該複數個第二氣體流量感測器中之每一個的一出口；且 其中該控制器耦接至該複數個第二質量流量感測器及該複數個第二氣體閥以控制穿過複數個第二氣體通道中之每一個的一第二氣體之所需流量比。
  5. 如請求項4之氣體注入系統，其中，該複數個第二質量流量感測器中之每一個被組構用於量測穿過各第二氣體通道之該第二氣體的相對流量。
  6. 如請求項4之氣體注入系統，其中，該第二氣體包括一氣體混合物。
  7. 如請求項4之氣體注入系統，其中，該複數個第二氣體閥包括一比例閥。
  8. 如請求項4之氣體注入系統，其中，該複數個第二氣體閥包括一氣動閥。
  9. 如請求項4之氣體注入系統，其進一步包括耦接至一反應腔室之一凸緣。
  10. 如請求項9之氣體注入系統，其中，該複數個第一氣體閥及該複數個第二氣體閥以流體方式耦接至形成於該凸緣內之凸緣通道。
  11. 如請求項1之氣體注入系統，其中，該複數個第一氣體閥包括一比例閥。
  12. 如請求項1之氣體注入系統，其中，該複數個第一氣體閥包括一氣動閥。
  13. 如請求項1之氣體注入系統，其進一步包括耦接至該第一氣體供給管線之一進口的一第一質量流量控制器。
  14. 如請求項13之氣體注入系統，其進一步包括耦接至該第一氣體供給管線之該進口的一第二質量流量控制器。
  15. 一種反應器系統，其包括請求項1之氣體注入系統。
  16. 如請求項15之反應器系統，其進一步包括耦接至該複數個第一氣體閥之一反應腔室。
  17. 如請求項16之反應器系統，其進一步包括耦接至該反應腔室之一凸緣，其中該複數個第一氣體閥以流體方式耦接至形成於該凸緣內之凸緣通道。
  18. 一種反應器系統，其包括請求項4之氣體注入系統。
  19. 如請求項18之反應器系統，其進一步包括耦接至該複數個第二氣體閥之一反應腔室。
  20. 如請求項18之反應器系統，其進一步包括一真空源。
TW108126178A 2018-08-06 2019-07-24 多端口氣體注入系統及包括該系統之反應器系統 TW202007792A (zh)

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