CN102365389B - 半导体处理反应器及其部件 - Google Patents
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Abstract
具有包围气体输送系统(14)的外壳的反应器可操作地连接到反应室(16)和排气组件(18)。气体输送系统包括用于向反应室提供至少一种处理气体的多根气体管路。气体输送系统还包括用于接纳至少一种处理气体的混合器(20)。混合器可操作地连接到构造成使处理气体扩散的扩散器(22)。扩散器直接附连于反应室的上表面(24),由此在两者之间形成扩散器容积。扩散器包括至少一个分配表面,该分配表面构造成当处理气体在引入反应室之前经过扩散器容积时提供对处理气体的流动限制。反应室形成反应空间,在该反应空间中设置半导体衬底以进行处理。排气组件可操作地连接到反应室,以从反应空间抽出未反应的处理气体和流出物。
Description
相关申请的交叉引用
本申请根据35U.S.C.119(e)要求2009年4月6日提交的美国临时专利申请61/167,093和2010年4月5日提交的美国非临时专利申请12/754,223的优先权。
技术领域
本申请总地涉及半导体处理设备,并尤其涉及用于将处理气体输送到衬底反应室的装置和系统。
背景技术
原子层沉积(“ALD”)是半导体工业中用于在诸如硅片的衬底上形成材料薄膜的一种已知工艺。ALD是气相沉积的一种类型,其中,通过沉积具有由沉积层数确定的膜厚的多层超薄层来形成膜。在ALD工艺中,将待沉积的材料的一种或多种化合物(前体)的气态分子供给到衬底或晶片以在衬底上形成那种材料的薄膜。在一个脉冲内,第一前体材料在自限制过程中相当完整地吸附到衬底上。前体材料可以在后续的反应物脉冲中分解,以形成所期望材料的单层分子层。替代地,所吸附的前体材料可以与后续反应物脉冲的反应物进行反应,以形成化合物的单层分子层。通过反复的生长周期产生较厚的膜,直到达到目标厚度。
在ALD工艺中,将具有待涂敷的至少一个表面的一个或多个衬底引入反应器或沉积室。衬底被加热到高于选择的气相反应物的冷凝温度但低于热分解的期望温度。一种反应物能够与吸附的前一反应物种类进行反应,以在衬底表面上形成期望产品。产品可以呈膜、衬垫或层的形式。
在ALD工艺过程中,借助于反应物脉冲之间的去除步骤,全都呈气化或气态形式的反应物脉冲被相继脉冲输入反应器。例如,在反应物脉冲之间提供惰性气体脉冲。在下一个反应物脉冲之前,惰性气体净化一个反应物脉冲室,以避免气相混合或CVD型反应。ALD的特征在于每种反应物都被输送到衬底,直到实现饱和的表面状态。重复循环以形成期望厚度的原子层。为了获得自限制的生长,提供足够量的每一种前体以使衬底饱和。当生长速度是自限制时,生长速度与反应序列的重复速度而不是与在CVD中的反应物流量成比例。
用于ALD工艺的典型反应室包括顶板和和底板,穿过顶板形成有槽。该槽使处理气体可以通过该槽引入反应室,且槽是设置成垂直于主气流通路的大体直线的开口。然而,因为经过槽引入反应室的处理气体通常具有沿槽的整个宽度的相同流速,所以当处理气体流经反应室时,处理气体与晶片的前缘接触所耗时间在横跨反应室的宽度上是不同的。换言之,尽管经由槽引入反应室的处理气体的速度在槽的宽度上基本上恒定,但在反应室的边缘附近引入反应室的气体与衬底前缘接触所耗时间大于在反应室的中心线附近引入反应室的气体与衬底前缘接触的时间,如图1A中所示。因此,在最靠近反应室侧壁的衬底最侧面边缘暴露于处理气体之前,反应室的中心线附近的衬底前缘暴露于较大量的处理气体。这通常导致反应室的中心线附近的衬底前缘经许多ALD循环后具有比衬底侧面边缘大的沉积厚度,这是因为当前体吸附到较靠近反应室的中心线的衬底前缘时,处理气体中的前体浓度减小。在衬底上从衬底前缘流动到尾缘的处理气体内的前体浓度的降低,以及相对于反应室的侧面边缘来自纵向中心线的类似的浓度降低导致衬底上的沉积不均匀。由此,经由槽引入反应室的处理气体的理想驻留时间分布应当在槽的整个宽度上基本相同,因而,处理气体从槽流动到衬底前缘的对应位置的时间在反应室的宽度上是恒定的。
驻留时间分布(“RTD”)是恒定时间(即,流体元到达固定位置的时间是恒定的)轮廓,其应当进行优化,以使RTD的形状对应于衬底的整个前缘,如图1B中所示。因此,在反应室的中心线附近从衬底侧面边缘到前部边缘横跨衬底的整个前缘具有基本上相同浓度的处理气体波。
因此,需要一种气体输送系统,该系统使处理气体分配成分配的处理气体引入反应室中,从而产生将处理气体引入反应室的槽和衬底的前缘之间的预定RTD,以形成在待处理的整个衬底上更为均匀的膜沉积。
发明内容
在本发明的一个方面,提供用于将至少一种处理气体输送到反应室的气体输送系统。气体输送系统包括与反应室流体连通的扩散器。扩散器直接附连于反应室的上表面。用于分配处理气体的扩散器容积形成于反应室的上表面和扩散器之间。
对于本发明的另一个方面,提供一种用于在处理气体引入反应室之前分配至少一种处理气体的扩散器。扩散器包括入口部,该入口部具有穿过该入口部的通道以接纳处理气体。扩散器还包括附连于入口部的分配部。分配部包括安装表面、第一分配表面、第二分配表面、第三分配表面和第四分配表面,其中,第一、第二、第三和第四分配表面在第一侧面和第二侧面之间侧向延伸。第一侧面和第二侧面在第一、第二、第三和第四分配表面和安装表面之间延伸。
在本发明的又一方面,提供用于处理半导体衬底的反应器。反应器包括扩散器。扩散器具有至少一个第一润湿表面。反应器还包括可操作地连接到扩散器的反应室。反应室与扩散器流体连通,且反应室具有至少一个第二润湿表面。反应器还包括在第一、第二或第三润湿表面中的至少一个表面上的表面纹理。表面纹理具有约50-250Ra之间的表面粗糙度。
从本发明的已借助附图示出和描述的较佳实施例的详细说明中,本发明的优点对于那些本领域技术人员来说更加清楚。将实现的是,本发明能够具有其它和不同的实施例,且它们的细节能具有各方面的变型。因而,附图和说明应当被认为实质上是说明性的而非限制性的。
附图说明
图1A是经过现有技术中常用的反应室的处理气体的驻留时间分布图。
图1B是经过反应室的处理气体的较佳驻留时间分布图。
图2是气体分配系统、反应室和排气系统的实施例的俯视立体图。
图3是图2中所示气体分配系统、反应室和排气系统的分解图。
图4是图2中所示气体分配系统、反应室和排气系统沿线4-4的剖视图。
图5A是扩散器的实施例的俯视立体图。
图5B是图5A中所示扩散器的仰视立体图。
图5C是图5A中所示扩散器的仰视平面图。
图5D是图5A中所示扩散器的后视平面图。
图5E是图5C中所示扩散器沿线X-X剖取的剖视图。
图5F是图5E中所示扩散器的一部分的放大剖视图。
图6A是反应室的顶板的实施例的俯视立体图。
图6B是图6A中所示顶板的俯视平面图。
图6C是图6A中所示顶板的仰视平面图。
图6D是图6B中所示顶板沿线F-F剖取的剖视图。
图6E是图4中所示反应室和气体分配系统的一部分的放大剖视图。
图7A是反应室的底板的实施例的俯视立体图。
图7B是图7A中所示底板的俯视平面图。
图7C是图7A中所示底板的仰视平面图。
图7D是图7B中所示底板沿线D-D’剖取的剖视图。
图8是排气垫片的实施例的俯视立体图。
具体实施方式
参见图2至4,示出用于半导体加工工具的反应器10的示例性实施例。反应器10包括外壳12、气体输送系统14、反应室16和排气组件18。外壳12形成半导体衬底可在其中进行处理的室。反应器10构造成接纳插入反应室16的半导体衬底。一旦在反应室16中,可在衬底上进行任何数目的不同处理和化学反应,包括蚀刻过程、膜沉积过程、烘焙过程或本领域技术人员已知的任何其它过程。衬底在反应室16中处理之后,取出衬底,然后另一衬底插入反应室16中以进行处理。在实施例中,外壳12提供处理成分所驻留的降压室。在另一实施例中,外壳12提供保持在大气压或接近大气压的室。
参见图2-4,示出气体输送系统14、反应室16和排气组件18的示例性实施例。气体输送系统14包括构造成将气体运输到与扩散器22流体连通的混合器20的多根气体管路。扩散器22可操作地并流体连接到半导体衬底于其中进行处理的反应室16。反应室16包括顶板24和底板26,且顶板和底板24、26形成在其内部的反应空间28。基座30构造成相对于反应室16抬高和降低,以将衬底32引入反应空间28及从反应空间中取出衬底32。排气组件18可操作地并流体连接到反应室16以从反应室中撤出处理气体和流出物。如图4中所示,示出气体经过混合器20、扩散器22、反应室16和排气组件18的流动路径A。尤其是,流经混合器20和扩散器22的气体沿与这些流经反应室16的气体基本上相反的方向流动。
如图2-3中所示,气体输送系统14包括可操作地连接到混合器20的多根气体管路。在实施例中,用于将反应气体或液体引入混合器20的气体管路可包括:第一反应物气体管路34、第二反应物气体管路36、第三反应物气体管路38和第四反应物气体管路40。本领域的普通技术人员应当理解到,任何数目的反应物气体管路能可操作地并流体连接到混合器20,以将反应物传输至该混合器。反应物气体管路34、36、38、40构造成输送反应物,诸如来自固体源的气化前体、来自液体源的气化前体、臭氧、水或用于处理衬底的任何其它反应物。尽管气体管路34、36、38、40被描述成构造成输送气体,但本领域的普通技术人员应当理解气体、蒸气和/或液体可类似地经由这些管路而输送到混合器20。气体输送系统14还包括第一旁路管路42、第二旁路管路44、第三旁路管路46和第四旁路管路46。旁路管路42、44、46、48构造成将惰性气体输送到混合器20。每个旁路管路42、44、46、48都可操作地连接到对应的反应物气体管路34、36、38、40。旁路管路42、44、46、48与对应的反应物气体管路34、36、38、40以及混合器20流体连通。气体输送系统14还包括第一反吸管路50、第二反吸管路52、第三反吸管路54和第四反吸管路56。反吸管路20、52、54、56可操作地并流体连接到对应的反应物气体管路34、36、38、40、旁路管路42、44、46、48以及排气组件18。反吸管路50、52、54、56构造成通过抽出这些气体并旁通反应室16来可选择地将来自反应物气体管路34、36、38、40的反应物气体和/或将来自旁路管路42、44的惰性气体输送到排气组件18。在实施例中,反应物气体管路34、36、38、40、旁路管路42、44、46、48和反吸管路50、52、54、56全部由钛制成,但本领域的普通技术人员应当到这些管路可由不锈钢或将不与输送到混合器20或排气组件18的任何气体或流体反应的任何其它材料制成。
如图2-4中所示,气体输送系统14还包括混合器20,该混合器构造成接收来自反应物气体管路34、36、38、40和旁路管路42、44、46、48的反应气体和惰性气体。在实施例中,反应物气体管路34、36、38、40通过焊接永久地附连至混合器20。在另一实施例中,反应物气体管路34、36、38、40可拆除地固定到混合器20,因而,如果气体管路受到损坏或者由于其它原因需要更换,则可以为了更换而从混合器20中仅拆下单独的气体管路和对应的旁路管路和反吸管路。如图4的剖视图中所示,在实施例中,混合器20包括本体58和形成于本体58中的室60。在实施例中,两根反应物气体管路34、36附连至本体58的一侧,而另两根反应物气体管路38、40附连至本体的相对侧,因而,气体可沿相对的方向引入室60,由此在气体流入扩散器22之前使气体在室60内循环。混合器20可拆除地附连于扩散器22并与其流体连通。在实施例中,混合器20由钛制成成,但本领域的普通技术人员应当理解,混合器可替代地由不锈钢或将不与经由混合器20输送到扩散器22的任何气体或流体反应的任何其它材料制成。
气体输送系统14还包括与混合器20流体连通的扩散器22,且扩散器22构造成向反应室16提供经分配的气流,如图4中所示。反应室16的顶板24包括上表面62、下表面64和在上表面和下表面62、64之间延伸的边缘66。扩散器22直接附连于反应室16的上表面62,由此在两者之间形成扩散器容积68。参见图5A-5F,示出扩散器22的示例性实施例。在所示实施例中,扩散器22是扇形构件,其可松开地固定到反应室16的顶板24的上表面62。扩散器22包括入口部70和分配部72。在实施例中,入口部70和分配部72一体形成。在另一实施例中,入口部70和分配部72单独形成,随后牢固地彼此附连。扩散器22还包括连接表面74、安装表面76、上表面78、端面80和从上表面78伸出的成对的凸台82。连接表面74构造成当扩散器22与混合器附连时与混合器20的本体58邻接。安装表面76构造成与扩散器22所附连的反应室16的顶板24的上表面62接触。扩散器22的上表面78是与安装表面76相对的表面并背对反应室16。端面80在安装表面76和上表面78之间延伸,且端面80是形成扩散器22的与入口部70相对的弯曲端的弯曲表面。
扩散器22的入口部70构造成在气体引入扩散器22的分配部72之前提供气体离开混合器20的路径,如图5C-5E中所示。入口部70包括呈大体正方形构件的入口块84,如图4中所示,该入口块构造成直接附连于混合器20的本体58。入口块84包括形成穿过入口块的通道86。通道86与混合器20的室60直接流体连通,因而,引入混合器20的气体从该混合器输送到形成于扩散器22的入口块84内的通道86中。通道86较佳地提供混合器20和扩散器22的分配部72之间大体直线的路径。通道86较佳地关于穿过入口部70延伸的中心轴线B(图5E)对称。在实施例中,通道86由第一通路88和相邻的第二通路90构成,其中,第一通路和第二通路88、90形成连续的流动路径。第一通路88由第一入口表面92形成,而第二通路90由第二入口表面94形成。
在实施例中,形成穿过入口块84的第一通路88的第一入口表面92呈大体锥形,因而,第一入口表面92的直径在与混合器20相邻的位置相对于与第二通路90相邻的位置的较小直径更大,如图5E中所示。因为第一通路88的截面面积沿气体离开混合器20的流动路径方向减小,所以这些气体的流速随着气体沿第一通路88的长度前进而增大。在另一实施例中,第一入口表面92呈大体圆柱形,由此提供第一通路88沿其长度基本恒定的横截面。本领域的普通技术人员应当理解,第一入口表面92可由能增大、减小或保持经过第一通路88的恒定气体流速的任何形状来构成。
在实施例中,形成穿过入口块84的第二通路90的第二入口表面94呈大体圆筒形,由此提供第二通路90沿其长度基本恒定横截面,如图5E中所示。当第一入口表面92呈大体锥形,而第二入口表面94呈大体圆筒形时,两表面之间的界面提供过渡,因而经过第一通路88的气体流速沿其长度持续增大,而经过第二通路90的气体流速沿其长度保持基本上相同。在另一实施例中,第二入口表面94呈大体锥形(未示出),因而第二入口表面94的直径在与第一入口表面92相邻的位置相对于在与分配部72相邻的位置处的较小直径更大。当第一入口表面和第二入口表面92、94都呈大体锥形时,这些表面可以构造成第一通路和第二通路88、90提供穿过入口块84的持续变窄的通路,由此使流经该变窄通路的气体流速更为平缓地增大。本领域的普通技术人员应当理解,第二入口表面94可由能增大、减小或保持经过第二通路90的恒定气体流速的任何形状构成。第二通路90的与第一通路88相对的端部通入扩散器22的分配部72。
处理气体借助于穿过入口部70在混合器20和分配部72之间延伸的通道86而引入分配部72,如图5C-5E中所示。在实施例中,分配部72包括第一分配表面96、第二分配表面98、第三分配表面100以及第一偏转表面102以及形成扩散器容积68的侧向边界的第一侧面104和第二侧面106和在这两个侧面之间延伸的第三侧面108。本领域的普通技术人员应当理解,尽管所述实施例包括入口部70和分配部72的第三侧面108之间延伸的四个不同表面,但可以有组合成在两者之间延伸的任何数目的不同表面。
在图5C、5E和5F中所示实施例中,由入口部70、第二分配表面98和分配部72的第一侧面和第二侧面104、106界定第一分配表面96。在实施例中,第一分配表面96倾斜成第一分配表面96和反应室16的顶板24的上表面62之间的距离沿从入口部70到分配部72的第三侧面108的方向减小,如图5F中所示的角度α。在实施例中,第一分配表面96在约0-10°之间倾斜。在另一实施例中,第一分配表面96在约3-7°之间倾斜。在又一实施例中,第一分配表面96呈约4°倾斜。在实施例中,在第一侧面和第二侧面104、106之间没有第一分配表面96的侧向坡度。在另一实施例中,第一分配表面96能以任何方式在第一侧面和第二侧面104、106之间倾斜或弯曲。
在图5C、5E和5F中所示实施例中,由第一分配表面96、第三分配表面100和分配部72的第一侧面和第二侧面104、106界定第二分配表面98。在实施例中,第二分配表面98倾斜成使第二分配表面98和反应室16的顶板24的上表面62之间的距离沿从第一分配表面96到分配部72的第三侧面108的方向减小,如图5F中所示的角度β。在实施例中,第二分配表面98在约5-20°之间倾斜。在另一实施例中,第二分配表面98在约7-15°之间倾斜。在又一实施例中,第二分配表面98呈约10°倾斜。在实施例中,在第一侧面和第二侧面104、106之间没有第二分配表面98的侧向坡度。在另一实施例中,第二分配表面98能以任何方式在第一侧面和第二侧面104、106之间倾斜或弯曲。
流过扩散器容积68的处理气体在流过第一偏转表面102之前流过第三扩散表面100,且下面更为详细地描述第三分配表面100。在图5C、5E和5F中所示实施例中,由第三分配表面100和分配部72的第一侧面、第二侧面和第三侧面104、106、108界定第一偏转表面102。在实施例中,第一偏转表面102倾斜成使第一偏转表面102和反应室16的顶板24的上表面62之间的距离沿从第三分配表面100到分配部72的第三侧面108方向减小,如图5F中所示的角度θ。在实施例中,第一偏转表面102在约10-35°之间倾斜。在另一实施例中,第一偏转表面102在约20-30°之间倾斜。在又一实施例中,第一偏转表面102呈约26°倾斜。本领域的普通技术人员应当理解,第一分配表面96、第二分配表面98和第一偏转表面102可沿从入口部70到分配部72的第三侧面108的纵向方向或者从第一侧面104到第二侧面106的侧向方向以任何角度倾斜。在实施例中,在第一侧面和第二侧面104、106之间没有第一偏转表面102的侧向坡度。在另一实施例中,第一偏转表面102能以任何方式在第一侧面和第二侧面104、106之间倾斜或弯曲。
在图5C、5E和5F中所示实施例中,由第二分配表面98、第一偏转表面102和分配部72的第一侧面和第二侧面104、106界定第三分配表面100。在实施例中,当第一分配表面96和第二分配表面98如上所述沿纵向方向倾斜时,第三分配表面100沿侧向倾斜。第三分配表面100关于沿扩散器22的纵向轴线(图5C)对齐的中心线110对称。在实施例中,当扩散器22附连于反应室16的顶板24时,第三分配表面100的中心线110和顶板24的上表面62之间的距离在约1.0-3.0毫米之间。在另一实施例中,第三分配表面100的中心线110和顶板24的上表面62之间的距离在约2.0-2.5毫米之间。在另一实施例中,第三分配表面100的中心线110和顶板24的上表面62之间的距离为约2.24毫米。第三分配表面100沿侧向倾斜成与第一侧面和第二侧面104、106直接相邻的第三分配表面100相对于第三分配表面100的中心线110和顶板24的上表面62之间的距离与顶板24的上表面62离得更远。在实施例中,与第一侧面和第二侧面104、106直接相邻的第三分配表面100和顶板24的上表面62之间的距离在约3.0-5.0毫米之间。在另一实施例中,与第一侧面和第二侧面104、106直接相邻的第三分配表面100和顶板24的上表面62之间的距离在约3.5-4.8毫米之间。在又一实施例中,与第一侧面和第二侧面104、106直接相邻的第三分配表面100和顶板24的上表面62之间的距离在约4.0毫米。第三分配表面100在中心线110和相对的第一侧面和第二侧面104、106之间的侧向坡度可以是连续的坡度或可以弯曲成使第三分配表面100与顶板24的上表面62间隔开的距离在中心线110和第一侧面和第二侧面104、106之间是非线性的。
当处理气体经过扩散器容积68从混合器20流动到反应室16时,第三分配表面100用作对处理气体的第一气体流动限制。第一分配表面和第二分配表面96、98提供第一侧面和第二侧面104、106之间持续增大的侧向宽度以及第一分配表面和第二分配表面96、98和顶板24的上表面之间持续减小的高度,而第三分配表面100尤其成形为使处理气体在其与第一偏转表面102接触并朝向反应室16之前侧向分配在第一侧面和第二侧面104、106之间。除了侧向分配处理气体外,第三分配表面100还更改处理气体在扩散器容积68的宽度上的相对气体流速。尤其是,所述实施例的第三分配表面100限制中心线110附近的气体流动,以减小在扩散器22的中心轴线附近的气流速度,同时逐步减小气体相对于中心线110侧向流动的限制。因此,与靠近第一侧面和第二侧面104、106的第一偏转表面102接触的处理气体流速比与靠近中心线110的第一偏转表面102接触的处理气体的流速大。因此,从扩散器22流入反应室16的处理气体的速度在第一偏转表面102的宽度上变化。本领域的普通技术人员应当理解到,第三分配表面100的形状能以任何方式成形或倾斜,以在其宽度上提供预定的气体流度分布,且所得气体流速分布产生对应的驻留时间分布,如下面详细所述。本领域的普通技术人员应当理解到,沿入口部70和第三侧面108之间的方向延伸的任何表面可提供控制在扩散器22的宽度上相对气体流速的第一流动限制。
在实施例中,扩散器22还包括第一过渡表面112和第二过渡表面114,如图5B-5C中所示。第一过渡表面和第二过渡表面112、114是弯曲面,这些弯曲面提供扩散器22的分配部72的侧向定位的表面和垂直定位表面之间的过渡。第一过渡表面112提供基本上垂直定位的第一侧面104和基本上侧向定位的第一分配表面96、第二分配表面98、第三分配表面100和第一偏转表面102之间的过渡。第二过渡表面114提供基本上垂直定位的第二侧面106和基本上侧向定位的第一分配表面96、第二分配表面98、第三分配表面100和第一偏转表面102之间的过渡。在另一实施例中,垂直定向的第一侧面和第二侧面104、106与侧向定位的第一分配表面96、第二分配表面98、第三分配表面100以及第一偏转表面102直接过渡,以形成它们之间的角度,而没有中间的过渡表面。
在实施例中,扩散器22的分配部72的第一侧面和第二侧面104、106都由多段构成,其中,每个相邻段沿相对于扩散器22的中心线110侧向具有不同的曲率,如图5C中所示。第一侧面和第二侧面104、106沿侧向的形状可以进行优化,从而当这些处理气体与第一侧面和第二侧面104、106接触时减小或消除处理气体的再循环。在另一实施例中,第一侧面和第二侧面104、106在入口部70和第三侧面108之间的形状具有在它们之间一致的曲率。
在处理气体经过扩散器22之后,处理气体经顶板24引入反应室16,如图4和6A-6D中所示。顶板24包括上表面62、下表面64和在上表面与下表面62、64之间延伸的边缘66。如图6C中所示,下表面64是大体平坦的表面。上表面62包括从其中伸出的成对凸起的凸台120。上表面62还包括从上表面62伸入顶板24厚度的凹入区域122。凹入区域122构造成当扩散器22如图4中所示附连于顶板24时接纳扩散器22的入口部70。凹入区域122的深度尺寸和形状应当允许入口部70设置在该凹入区域内。
如图4和6A-6D中所示,顶板24还包括凸起表面124。凸起表面124成形为基本上对应于扩散器22的分配部72。因此,当扩散器22直接附连于顶板24的上表面62时,扩散器22的安装表面76与顶板24的凸起表面124基本对齐。本领域的普通技术人员应当理解到,凸起表面124的尺寸可以比扩散器22的安装表面76的外轮廓略大,以确保整个安装表面76与顶板24邻接。扩散器容积68(图4)形成于顶板24的凸起表面124和扩散器22的第一、第二和第三分配表面96、98、100,第一偏转表面102,第一、第二和第三侧面104、106、108和第一和第二过渡表面112、114之间。
顶板24还包括穿过其厚度形成的入口槽126,如图4和6A-6E中所示。在实施例中,入口槽126形成为弯曲槽,该弯曲槽基本上对应于扩散器22的第三侧面108。在实施例中,入口槽126的形状一般对应于衬底32的前缘,以减小处理气体必须在入口槽126和衬底32的前缘之间流动的距离,因而气体必须在入口槽126和衬底32的前缘之间行进的距离在入口槽126的整个宽度上基本上是相同的。入口槽126的形状可以结合第三分配表面100的形状进行优化,以提供处理气体在入口槽126和衬底32的前缘之间预定的驻留时间分布(图4)。在另一实施例中,入口槽126基本上呈直线。本领域的普通技术人员应当理解到,入口槽126可以基本上呈直线、弯曲或任何其它形状,而弯曲的入口槽126可具有足以在反应空间28内提供预定的驻留时间分布的任何曲率半径。入口槽126的尺寸和形状应当是当处理气体从扩散器22流动到反应空间28时不提供对处理气体的附加流动限制。
如图4和图6D-6E中所示,穿过顶板24的厚度形成的入口槽126由外表面128、内表面130、第一倾斜表面132、第二倾斜表面133和成对的角部面134形成,角部面提供外表面128和内表面及倾斜表面130、132、133之间的过渡。在实施例中,外表面和内表面128、130基本上同心,因而,这些表面之间的距离沿入口槽126的整个长度基本上相同。在实施例中,外表面和内表面128、130以基本上垂直的方式定位,以提供扩散器容积68和反应空间28之间基本上垂直的通路。在实施例中,入口槽126仅形成有外表面和内表面128、130,而没有第一和第二倾斜表面132、133。在所示实施例中,第一倾斜表面132从顶板24的上表面62向下延伸。第一倾斜表面132提供过渡表面,因而,离开扩散器容积68进入入口槽126的处理气体不以直角前进。而是,第一倾斜表面132允许气体从大体水平的流动方向缓慢过渡地流动到大体垂直的流动方向,由此避免会产生带动处理气体流动的湍流涡旋、漩涡或再循环并会引起这些局部区域内的化学气相沉积生长模式的突兀过渡。
内表面130以基本垂直的方式在第一倾斜表面132和第二倾斜表面之间延伸。在图4和6D-6E中所示的实施例中,第二倾斜表面133从顶板24的下表面64以一角度向上延伸。第二倾斜表面133提供过渡表面,因而,离开入口槽126进入反应空间28的气体并不以会引起上述湍流问题的直角前进。而是,第二倾斜表面133允许气体从基本垂直的流动方向缓慢过渡地流动到基本水平的流动方向。第一和第二倾斜表面132、133减小在入口槽126内再循环或涡流的可能性。本领域的普通技术人员应当理解到,第一和第二倾斜表面132、133能以相对于顶板24的上下表面62、64的任何角度来形成。
在操作时,处理气体流经扩散器22,气体的流动在第三分配表面100和顶板24的上表面62之间受限制,然后处理气体经由入口槽126引入反应室16。第三分配表面100构造成在扩散器22的宽度上相对于其中心线110修改处理气体的气体流速。因此,当处理气体进入入口槽126时,处理气体在入口槽126的宽度上的气体流速作类似变化。在实施例中,变化的气流速度结合入口槽126的形状产生驻留时间分布,这种驻留时间分布的形状使处理气体波基本上对应于衬底前缘的形状,如图1B中所示。处理气体的驻留时间是流体元行进一给定距离所花费的时间。驻留时间分布是恒定驻留时间横跨宽度的轮廓。因此,图1B示出示例性的驻留时间分布,其中,驻留时间分布的形状严密地对应于衬底的前缘,因而,处理气体从入口槽126流动到衬底前缘所花费的时间在反应室16的宽度上是恒定的。驻留时间分布的所述形状是由以相对于在反应室的中心线附近的较低气体流速来说在反应室的相对侧面边缘附近较高的气体流速离开入口槽126的气体流速造成的。尽管入口槽126和衬底前缘之间的总体距离在反应室的宽度上几乎相同,但反应空间28内的流体动力学需要预定的气体流速分布来产生这种形状的驻留时间分布。图1B仅示出对由扩散器22的第三分配表面100引起的对气流的限制造成的驻留时间分布的示例性实施例,但本领域的普通技术人员应当理解,第三分配表面100—或扩散器的构造成提供气体流动限制的任何其它表面—可以更改以产生预定的驻留时间分布。在另一实施例中,第三分配表面100成形为在入口槽126宽度上所得的气体流速分布产生“中心较重”的大体平坦形状的驻留时间分布,或者换言之驻留时间分布的形状对应于衬底尾缘的形状。
如图4中所示,顶板24附连于底板26以形成具有反应空间28的反应室16,该反应空间形成在顶板和底板24、26之间。如图7A-7C中所示,底板26是大体平坦的构件,其具有上表面136、下表面138和在上表面和下表面136、138之间延伸的边缘140。底板26包括由凹入表面144、第一侧面边缘146、第二侧面边缘148、第三侧面边缘150和第二偏转表面152构成的凹入区域142,其中,第一、第二、第三侧面边缘146、148、150和第二偏转表面152在凹入表面144和底板26的上表面136之间延伸。在实施例中,第一、第二和第三侧面边缘146、148、150以基本直线的方式在上表面136和凹入表面144之间延伸,其中,侧面边缘146、148、150和凹入表面144之间的过渡一般成直角。在另一实施例中,第一、第二和第三侧面边缘146、148、150从上表面136以大体垂直的方式延伸,但可包括用于在侧面边缘146、148、150和凹入表面144之间过渡的微小的曲率半径。本领域的普通技术人员应当理解到,当第一、第二和第三侧面边缘146、148、150在上表面136和底板26的凹入表面144之间延伸时,它们可以任何方式来定向。
第二偏转表面152在底板26的上表面136和凹入表面144之间延伸,如图4、7B和7D中所示。第二偏转表面152沿侧向和垂直方向弯曲。在实施例中,第二偏转表面152沿侧向围绕底板26的纵向中心线成弧度,其中,第二偏转表面152的弧度形状基本上对应于穿过顶板24形成的入口槽126的弧度形状。本领域的普通技术人员应当理解,第二偏转表面152沿侧向的曲率半径应对应于穿过顶板24形成的入口槽126的曲率半径以及扩散器22的第一偏转表面102的曲率半径。在实施例中,第二偏转表面152是在凹入区域142的第一侧面边缘和第三侧面边缘146、150之间延伸的弯曲表面。第二偏转表面152提供底板26的上表面136和凹入表面144之间的弯曲表面,以将处理气体从穿过入口槽126的基本垂直的流动方向改向到穿过反应空间28的基本水平的流动方向。本领域的普通技术人员应当理解,第二偏转表面152在上表面136和凹入表面144之间的总长度和曲率半径可以是足以允许处理气体改变流动方向而没有相当大量的气体涡流或再循环的任何角度或长度。
底板26还包括穿过底板形成的孔154,如图7A-7D中所示。孔154在底板26的下表面138和凹入表面144之间延伸。孔154构造成接纳载有将在反应室16内进行处理的衬底32的基座30(图4)。在操作时,撤去基座30,或降低基座,以接纳插入外壳12的衬底32。一旦衬底32安置于基座30上,基座30被抬高到孔154内的处理位置,其中,基座30定位在底板26附近或与底板接触。在处理衬底32之后,基座30被降低离开孔154,且用另一衬底32来重复循环。
处理气体经由与底板26的第二偏转表面152相邻的入口槽126而引入反应空间28,并经由与底板26的凹入区域142的第二侧面边缘148相邻形成的排气槽156而离开反应空间28,如图4和7A-7D中所示。排气槽156在底板26的下表面138和凹入表面144之间延伸的细长槽。在实施例中,排气槽156侧向延伸凹入区域142的第一和第三侧面边缘146、150之间的整个距离。在另一实施例中,排气槽156仅侧向延伸在第一和第三侧面边缘146、150之间距离的一部分。在实施例中,排气槽156关于底板26的纵向轴线对称。本领域的普通技术人员应当理解,排气槽156可具有足以允许处理气体离开顶板和底板24、26之间的反应空间28的任何长度或宽度。排气槽156应当构造成它不提供对穿过排气槽的气体流动的限制,但可通过调节穿过排气组件18的传导轮廓有助于气体输送系统14总体控制衬底前缘处的驻留时间分布。处理气体通过排气槽156离开反应室16,然后容纳于排气组件18中。
在图2-4中所示的实施例中,排气组件18可操作地连接到反应室16的底板26。在实施例中,排气组件18包括排气垫片158、排流槽160(exhaust launder)和将处理气体和流出物从排流槽160运输到外壳12之外的管道系。当组装时,排气垫片158设置在排流槽160和底板26的下表面138之间,且排气组件18直接附连于反应室16。
如图8中所示,排气垫片158包括穿过排气垫片形成的细长限制槽162。排气垫片158提供对处理气体流动的第二限制。在实施例中,限制槽162的长度基本上对应于穿过底板26形成的排气槽156的长度。限制槽162形成为该槽是蝴蝶结形(bow-tie)。换言之,限制槽162的宽度在限制槽162的相对端部处相对于在限制槽162的中点166处的较窄宽度来说较大。给定处理气体沿排气槽156的基本恒定的流速,限制槽162的形状提供对经过限制槽162的中点166的处理气体相对于对处理气体在限制槽162的端部164附近的较小流动限制来说增大的流动限制。因此,当离开排气垫片158时,限制槽162的中点166附近的气体流速比限制槽162的端部164附近的气体流速小。结果,第二气体流动限制结合由扩散器22的第三分配表面100引起的气体流动限制导致经过反应室16的驻留时间分布严密对应于被处理的衬底32的整个前缘的形状。
当如图4中所示组装顶板和底板24、26以形成反应室16时,反应空间28形成在底板26的凹入区域142、基座30和顶板24的下表面64之间。反应空间28提供处理气体可通过其在入口槽126和排气槽156之间行进的体积。在反应空间28内,处理气体与衬底32接触以在衬底32上沉积一层材料。在衬底表面上的化学反应的流出物或副产品和任何未反应的处理气体从反应室16经由排气槽156排出。
如图6E中所示,当扩散器22附连于组装好的反应室16时,形成在入口槽126的外表面128和顶板24的上表面62的连结处的边缘与扩散器22的安装表面76直接相邻定位。结果,形成在扩散器22的安装表面76和第三侧面108的连结处的边缘定位在形成入口槽126的间隙内,该入口槽形成在顶板24内,因而,扩散器22的边缘不与入口槽126的对应边缘相对齐。
相似地,当顶板24附连于底板26以形成反应室16时,形成在底板26的上表面136和第二偏转表面152之间的凹入区域142的边缘就定位在略微超出顶板24的入口槽126的外表面128,因而,与入口槽126相邻定位的凹入区域142的边缘与顶板24的下表面64接触。结果,由顶板24的下表面64和外表面128的连结形成的边缘定位在底板26的凹入区域142之上。因此,扩散器22的边缘相对于入口槽126的对应边缘略微偏离,且入口槽126的边缘相对于底板的凹入区域142的对应边缘略微偏离。当处理气体从扩散器容积68过渡到入口槽126再过渡到反应空间28时,这些偏移边缘提供阶式流动作用,其中,气体流动沿流动方向作大体u形弯的变化。阶式流动作用减小或消除处理气体的再循环,如果扩散器22、顶板24和底板26的对应边缘未适当对齐时会产生这种再循环。因为第一气体流动限制从入口槽126向上游移动,因而,入口槽126并不用作气体流动限制,所以简化扩散器22和反应室16的拆解。结果,拆解的简化允许更直接的视线,从而清洁或添加表面纹理到扩散器22和反应室16的表面。
在实施例中,包括气体管路、混合器20和扩散器22以及反应室的顶板和底板24、26的整个气体输送系统14由不锈钢制成。本领域的普通技术人员应当理解,气体管路、混合器20和/或扩散器22还可由钛、铝、合金或相对于衬底处理中所用的处理气体为惰性的任何材料制成。混合器20、扩散器22、顶板24和底板26都包括与从气体管路流动到排气组件18的处理气体相接触的表面。与处理气体接触的每个表面都是润湿表面,意味着当处理气体流经整个系统时,整个表面的至少一部分暴露于处理气体。对于混合器20,形成室60的表面在其与处理气体接触时是润湿表面。对于扩散器22,形成穿过入口部70的通道86的第一和第二入口表面92、94是润湿表面。另外,形成扩散器容积68的每个表面也是润湿表面。扩散器容积68的这些润湿表面包括:第一、第二和第三分配表面96、98、100,第一偏转表面102,第一、第二和第三侧面104、106、108,第一过渡表面和第二过渡表面112、114和顶板24的凸起表面124的至少一部分。对于入口槽126,外表面128和第一及第二倾斜表面132、133和内表面130也是润湿表面。对于反应室16,形成反应空间28的所有表面都是润湿表面。扩散器容积28的润湿表面包括:由凹入区域142以及凹入表面144露出的顶板24的下表面64的至少一部分、第一、第二和第三侧面边缘146、148、150以及第二偏转表面152。
在处理衬底32的过程中,当处理气体引入气体输送系统14和反应室16中时,处理气体以与处理的衬底32表面的相似方式与润湿表面反应。在ALD工艺的每个循环之后,大约单层材料沉积在衬底32的暴露表面上以及气体输送系统14和反应室16的所有润湿表面上。如果润湿表面有非常小的表面粗糙度,则材料的沉积层不会保持粘附于润湿表面并倾向于随着膜积聚而从润湿表面剥落。然后,剥落的沉积层可落在衬底表面上,由此影响衬底上总体沉积的均匀性,以及导致可产出可行芯片的衬底的较小的表面积。然而,如果润湿表面具有过高的表面粗糙度,润湿表面的总表面面积增大使处理气体的浓度显著降低的量,浓度降低是由于在处理气体中的前体材料在处理气体到达处理的衬底32之前粘附于润湿表面。由此,本发明向每个润湿表面提供表面纹理,其中,表面纹理向每个润湿表面提供这样大小的表面粗糙度,即,使沉积材料层的剥落量减小并且最终与衬底表面接触的处理气体中前体材料的浓度并不通过吸附到润湿表面上而显著减小。因为ALD是表面敏感的工艺,所以表面纹理的量和程度应当优化成平衡由剥落和不粘附在润湿表面上而引起的膜应力的减小和由于前体吸附在润湿表面上造成的化学损失。
在实施例中,所有润湿表面的表面粗糙度在约30-250Ra(或μ英寸)之间。在另一实施例中,所有润湿表面的表面粗糙度在约32-110Ra之间。在又一实施例中,所有润湿表面的表面粗糙度在约90Ra。通过可利用与润湿表面的物理和化学接触的多步处理来达到混合器20、扩散器22和反应室16的润湿表面的表面粗糙度。
表面纹理是用于处理表面的任何技术,因而,在很大程度上控制离开理想表面的垂直偏移。表面纹理可通过多种技术来实现,包括机械的技术(即,研磨、喷砂、砂纸打磨或机加工来去除材料)或用相似或不相似但兼容的材料涂敷表面,以从起始表面抬高表面(即,喷涂、粉末涂敷、浸渍、蒸发镀层、旋压涂层等)。
尽管已描述了本发明的较佳实施例,但应当理解本发明不作如此限制,而可不脱离本发明地作修改。本发明的范围由所附权利要求书来限定,所有文字上或通过等同方式落入权利要求书含义内的装置、过程和方法意在包含于该范围内。
Claims (18)
1.一种用于将至少一种处理气体输送到反应室的气体输送系统,所述气体输送系统包括:
与所述反应室流体连通的扩散器,所述扩散器直接附连于所述反应室的上表面,其中,用于分配所述至少一种处理气体的扩散器容积形成于所述扩散器和所述反应室的所述上表面之间,且其中所述反应室包括相对的侧边缘和中心线,
其中,所述扩散器包括一个或多个分配表面、第一侧面、第二侧面和在所述第一侧面与所述第二侧面之间延伸的弯曲的第三侧面,
其中所述一个或多个分配表面中的至少一个沿侧向倾斜,以及
其中,所述上表面包括基本上对应于所述弯曲的第三侧面的弯曲入口槽,其中相对于在所述中心线附近的较低气体流速,在所述相对侧边缘附近离开所述入口槽的气体流速较高。
2.如权利要求1所述的气体输送系统,其特征在于,所述一个或多个分配表面中的至少一个分配表面构造成限制所述至少一个处理气体的流动,使得所述一个或多个分配表面中的所述至少一个分配表面相对于远离所述扩散器的所述中心线一侧向距离处的流动,减少在所述扩散器的中心线附近的流动。
3.如权利要求2所述的气体输送系统,其特征在于,所述一个或多个分配表面中的所述至少一个分配表面的中心线与所述反应室的所述上表面之间的距离小于所述一个或多个分配表面中的所述至少一个分配表面与所述第一侧面和所述第二侧面直接相邻处与所述反应室的所述上表面之间的距离。
4.如权利要求3所述的气体输送系统,其特征在于,所述一个或多个分配表面中的所述至少一个分配表面的中心线与所述反应室的所述上表面之间的距离在2.0到2.5毫米之间。
5.如权利要求4所述的气体输送系统,其特征在于,所述一个或多个分配表面中的所述至少一个分配表面的中心线与所述反应室的所述上表面之间的距离为2.24毫米。
6.如权利要求3所述的气体输送系统,其特征在于,所述一个或多个分配表面中的所述至少一个分配表面与所述第一侧面和所述第二侧面直接相邻处与所述反应室的所述上表面之间的距离在3.5毫米与4.8毫米之间。
7.如权利要求6所述的气体输送系统,其特征在于,所述一个或多个分配表面中的所述至少一个分配表面与所述第一侧面和所述第二侧面直接相邻处与所述反应室的所述上表面之间的距离约为4.0毫米。
8.一种用于分配至少一种处理气体的扩散器,所述扩散器包括:
入口部,所述入口部具有穿过所述入口部形成的通道,所述通道用于接纳所述至少一种处理气体;以及
分配部,所述分配部附连于所述入口部,所述分配部包括安装表面、第一分配表面、第二分配表面、第三分配表面和偏转表面,其中,所述第一、第二、第三分配表面和偏转表面在第一侧面和第二侧面之间侧向延伸,且其中所述第一侧面和第二侧面在所述第一、第二、第三分配表面和偏转表面和所述安装表面之间延伸,所述分配部还包括弯曲的第三侧面,所述第三弯曲表面在所述第一侧面与所述第二侧面之间延伸,且其中至少一个分配表面构造成限制所述至少一个处理气体的流动,使得所述至少一个分配表面相对于远离所述扩散器的所述中心线一侧向距离处的流动,减少在所述扩散器的中心线附近的流动。
9.如权利要求8所述的扩散器,其特征在于,所述安装表面是大体平坦的表面。
10.如权利要求8所述的扩散器,其特征在于,所述第一分配表面靠近所述入口部,所述第二分配表面靠近所述第一分配表面,所述第三分配表面靠近所述第二分配表面,而所述第四分配表面靠近所述第三分配表面。
11.如权利要求8所述的扩散器,其特征在于,所述第一分配表面相对于所述安装表面倾斜约4°,所述第二分配表面相对于所述安装表面倾斜约10°,且所述偏转表面相对于所述安装表面倾斜约26°。
12.如权利要求8所述的扩散器,其特征在于,所述第三分配表面是大体平坦的表面,并且基本上平行于所述安装表面。
13.如权利要求8所述的扩散器,其特征在于,所述第三分配表面在所述第三分配表面的中心线和所述第一侧面和第二侧面之间倾斜。
14.如权利要求13所述的扩散器,其特征在于,所述第三分配表面具有所述中心线和所述第一侧面和第二侧面之间恒定的坡度。
15.如权利要求13所述的扩散器,其特征在于,所述第三分配表面的所述中心线与所述安装表面垂直地间隔开1.0毫米到3.0毫米之间,而与所述第一侧面和第二侧面相邻的所述第三分配表面与所述安装表面垂直地间隔开3.0毫米和5.0毫米之间。
16.如权利要求13所述的扩散器,其特征在于,所述第三分配表面的所述中心线与所述安装表面垂直地间隔开约2.24毫米,而与所述第一侧面和第二侧面相邻的所述第三分配表面与所述安装表面垂直地间隔开约4.0毫米。
17.一种用于处理半导体衬底的反应器,所述反应器包括:
扩散器,所述扩散器包括一个或多个分配表面、第一侧面、第二侧面和在所述第一侧面与所述第二侧面之间延伸的弯曲的第三侧面,所述扩散器具有至少一个第一润湿表面;
反应室,所述反应室包括上表面,所述上表面包括基本上对应于所述弯曲的第三侧面的弯曲入口槽,所述反应室可操作地连接到所述扩散器,所述反应室与所述扩散器流体连通,且所述反应室具有至少一个第二润湿表面,其中所述反应室包括相对的侧边缘和中心线,且其中相对于在所述中心线附近的较低气体流速,在所述相对测边缘附近离开所述入口槽的气体流速较高;
所述第一润湿表面和第二润湿表面中的至少一个表面上的表面纹理,所述表面纹理具有30-250Ra之间的表面粗糙度。
18.如权利要求17所述的反应器,其特征在于,所述表面纹理具有约90Ra的表面粗糙度。
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TW200701301A (en) * | 2005-01-18 | 2007-01-01 | Asm Inc | Reaction system for growing a thin film |
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WO2010118051A2 (en) | 2010-10-14 |
US10480072B2 (en) | 2019-11-19 |
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US20200056286A1 (en) | 2020-02-20 |
CN102365389A (zh) | 2012-02-29 |
JP5779174B2 (ja) | 2015-09-16 |
WO2010118051A3 (en) | 2011-01-06 |
TWI531675B (zh) | 2016-05-01 |
TW201107526A (en) | 2011-03-01 |
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