TWI624561B - 用於半導體製程之氣體噴射器及成膜裝置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims description 29
- 230000008021 deposition Effects 0.000 title description 6
- 239000007789 gas Substances 0.000 claims abstract description 293
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 238000002347 injection Methods 0.000 claims description 52
- 239000007924 injection Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 36
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 230000003247 decreasing effect Effects 0.000 claims description 11
- 230000001965 increasing effect Effects 0.000 claims description 8
- 239000012159 carrier gas Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 2
- 239000010408 film Substances 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 230000035484 reaction time Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
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Abstract
一種用於半導體製程之成膜裝置中氣體噴射器,該氣體噴射器包含複數個氣體入口、複數個氣體流道及複數個氣體出口。該複數個氣體入口導入複數種氣體,並經由該複數個氣體流道輸送至相應之氣體出口。該複數個氣體流道中至少一者之一部分之截面積相對於該氣體出口係逐漸改變。
Description
本發明係關於一種於半導體基板上形成薄膜之氣相成膜裝置,詳細而言,係關於一種用於半導體製程之成膜裝置中氣體噴射器。
在半導體基板上形成薄膜過程中,成膜裝置容納基板之反應腔內係利用氣體噴射器將氣體源供應之氣體水平(或垂直)噴射至承載盤(susceptor)上之基板上方進行混合,再利用加熱所引起的物理或化學反應,從而在基板(例如:晶圓)上沉積薄膜。氣體噴射器的設計必須令氣源氣體水平噴出並達成均勻分布於旋轉之基板表面,從而於基板表面產生均勻的邊界層,以利沉積薄膜之進行。除此之外,噴射器氣源出口的間距與傾角等對於製程的結果亦有決定性的影響。
圖1係一習知成膜裝置之反應腔之剖視示意圖。一成膜裝置包含一用於產生氣相沉積薄膜之反應腔10,其係由腔壁11圍設一接近真空之密閉腔室。該腔室內設有一基板保持構件12,係用以承載及固定至少一片基板W。與基板保持構件
12相對有一對向面形成構件13,又該二者間形成並設有一氣體噴射器14。該氣體噴射器14包含第一噴射構件141、第二噴射構件142及氣體流道143~145。藉由基板保持構件12、第一噴射構件141、第二噴射構件142及對向面形成構件13中相鄰兩者,依序構成獨立之三個氣體流道143~145,一般分別用於導入及輸送用於製程之氣體,例如:H2/N2/V族原料氣體、III族原料氣體與載送氣體(carrier gas)之混合及H2/N2/V族原料氣體,並水平噴射至基板W之上進行混合,再利用加熱所引起的物理或化學反應,從而在晶圓W上沉積薄膜。
上述氣體流道143~145之出口端(最右端)會因為氣體有紊流現象而造成回流(back stream),使得未反應完全之製程氣體殘留於氣體噴射器14內,如此造成氣體流道之汙染,從而影響後續形成薄膜之製程。
綜上所述,半導體製造亟需要一種能改善前述回流問題之氣相成膜裝置,藉此可以提昇沉積薄膜之品質。
本申請案係提供一種氣體噴射器及成膜裝置,其係藉由改善氣體噴射器之結構,從而增進製程氣體之流速,並避免回流問題之產生。
本申請案係提供一種氣體噴射器及成膜裝置,藉由改變各氣體流道之出口端的截面積大小,可調整氣體離開各出口的流速,亦即改變氣體流經基板表面的化學反應時間長短,藉此有效提升沉積成膜之效率。
申請案係提供一種氣體噴射器及成膜裝置,其係
藉由改善氣體噴射器之結構,從而改變製程氣體之流速,以調整氣體及前驅物(precursor)的反應物之間的化學反應速度。
於是,本發明提出一實施例,一種用於半導體製程之氣體噴射器,包含:複數個氣體入口,導入複數種氣體;複數個氣體出口,向外噴射出該複數個氣體;以及複數個氣體流道,分別連接該複數個氣體入口至該複數個氣體出口,並輸送該複數個氣體至相應之該複數氣體出口;其中該複數個氣體流道中至少一者之一部分之截面積相對於該氣體出口係逐漸改變。
於另一實施例中,其中該複數個氣體流道中至少一者之一部分之截面積相對於該氣體出口係漸增或漸減。
於另一實施例中,該氣體流道具有改變截面積之該部分係延伸至該氣體出口。
於另一實施例中,該氣體流道具有改變截面積之該部分係未延伸至該氣體出口。
於另一實施例中,該氣體噴射器另包含複數個分隔該等氣體流道之噴射構件,其中於該氣體流道具有改變截面積之該部分中該等噴射構件中至少一者之厚度係漸增或漸減。
於另一實施例中,該複數個氣體出口中一者係位於中央之開口,其他係圍繞該中央之開口的環狀開口。該位於中央之開口及環狀開口係以同心排列。
本發明另提出一實施例,一種用於半導體製程之成膜裝置,包含:一反應腔,包括至少一基板保持構件;以及一氣體噴射器,包括:複數個氣體入口,導入複數種氣體;複數個氣體出口,向該基板保持構件噴射出該複數個氣體;及複數個氣體流道,分別連接該複數個氣體入口至該複數個氣體出
口,並輸送該複數個氣體至相應之該複數氣體出口;其中該複數個氣體流道中至少一者之一部分之截面積相對於該氣體出口係逐漸改變。
於另一實施例中,該氣體出口噴射出該氣體之方向係平行於該基板保持構件之表面。
於另一實施例中,該氣體出口噴射出該氣體之方向係垂直於該基板保持構件之表面。
本發明另提出一實施例,一種用於半導體製程之成膜裝置,包含:一反應腔,包括一承載盤及一相對於該承載盤之對向面形成構件;以及一氣體噴射器,包括:複數個噴射構件,係設置於該承載盤及該對向面形成構件之間;及複數個氣體流道,係由該複數個噴射構件分隔該承載盤及該對向面形成構件之間的空間所形成獨立之氣體輸送路徑;其中該複數個氣體流道中至少一者之一部分之截面積係逐漸增加或減少。
10、20‧‧‧反應腔
11‧‧‧腔壁
22‧‧‧承載盤
13、23‧‧‧對向面形成構件
14、24、44、54、64、74‧‧‧氣體噴射器
25‧‧‧氣體排氣部
12、221‧‧‧基板保持構件
222‧‧‧均熱板
223‧‧‧承受部
141、241、441、541、641、741、941‧‧‧第一噴射構件
142、242、442、542、642、742、942‧‧‧第二噴射構件
946‧‧‧第三噴射構件
143~145、243~245、443~445、543~545、643~645、743~744、943~945‧‧‧氣體流道
24a~24c、44a~44c、54a~54c、64a~64c‧‧‧氣體入口
24d~24f、44d~44f、54d~54f、64d~64f、74d~74e、94d~94e‧‧‧氣體出口
2411‧‧‧第一導入部
2421‧‧‧第二導入部
W‧‧‧基板
圖1係繪示一習知成膜裝置之反應腔之剖視示意圖。
圖2係繪示本申請案一實施例之成膜裝置之反應腔的剖視示意圖。
圖3係繪示圖2中氣體噴射器之噴射構件之立體示意圖。
圖4係繪示本申請案又一實施例之氣體噴射器之剖視示意圖。
圖5係繪示本申請案另一實施例之氣體噴射器之
剖視示意圖。
圖6繪示本申請案另一實施例之氣體噴射器之剖視示意圖。
圖7繪示本申請案另一實施例之氣體噴射器之剖視示意圖。
圖8A繪示圖8中沿I-I剖面線之剖面示意圖。
圖8B繪示圖8中沿II-II剖面線之剖面示意圖。
圖9繪示本申請案另一實施例之氣體噴射器之剖視示意圖。
以下,就實施本發明之各種實施形態來加以說明。請參照隨附的圖式,並參考其對應的說明。另外,本說明書及圖式中,實質相同或相同的構成會給予相同的符號而省略其重複的說明。
圖2係繪示本申請案一實施例之成膜裝置之反應腔的剖視示意圖。如圖所示,反應腔20係用於III/V族化合物半導體成膜裝置之範例。反應腔20係包含承載盤22、相對於該承載盤22之對向面形成構件23、氣體噴射器24及氣體排氣部25。基板W係藉由基板保持構件221來加以承載,並藉由均熱板222加熱基板W之背面(無電路表面),又基板保持構件221係被置於承載盤22之承受部223。本實施例之反應腔20可以同時於複數個基板W上形成薄膜,然也可以就一片基板W進行沉積製程。如圖所示,本實施例之基板W之表面(有電路表面)雖係垂直向下(所謂面向下型裝置),但在一般成膜條件中,重力的影響輕
微,故在基板W之表面朝上(所謂面向上型裝置)之其他實施例,亦能同樣地獲得本申請案之效果。因此,本案並未限定於面向下型者。
本實施例之反應腔20係具有中心對稱性,而承載盤22會相對其中心軸公轉,與此同時基板W會自轉之構造。該等自轉、公轉之方式及使用之機構並不能用於限制本發明。氣體噴射器24係以第一噴射構件241與第二噴射構件242所構成,並分為上、中、下之3層氣體流道243~245。大多實施例係從上方氣體流道243導入H2/N2/V族原料氣體,從中間氣體流道244導入III族原料氣體及載送氣體(carrier gas),從下面氣體流道245導入H2/N2/V族原料氣體。氣體流道243~245輸送III族及V族原料氣體之安排不受此實施例限制,上、中、下之3層氣體流道也可以採不同之順序,例如:分別為V/III/V族原料氣體。載送氣體可以是H2、N2、H2+N2、NH3(V族)、H2+NH3(V族)或前述氣體之任意組合。
氣體噴射器24包括複數個氣體入口24a~24c、複數個氣體流道243~245及複數個氣體出口24d~24f。該複數個氣體入口24a~24c導入複數種氣體,並分別輸送該等氣體至各相應之該氣體出口24d~24f。自該氣體出口24d~24f向基板W上方噴射出該等氣體並進行混合,再利用加熱所引起的物理或化學反應,從而在晶圓W上沉積薄膜。於本實施例中,第一噴射構件241與第二噴射構件242間之距離係朝向氣體出口24d~24f漸減,亦即中間氣體流道244之截面積會漸減,而上方氣體流道243及下方氣體流道245之截面積會漸增。此處截面積係指各氣體流道可讓氣體經過之中空部分之一截面的面積。如此中間的氣體流道244之氣體出口24e可加快離開氣體之流速,並避
免有前述回流之問題。本實施例中氣體流道之截面積改變方式僅為例示,然該等氣體流道243~245中至少一者之一部分之截面積相對於該等氣體出口24d~24f係逐漸改變亦為本申請案之保護範圍,或氣體流道之數目及排列方式可不同於此例所示。
本實施例藉由改變各氣體流道243~245之截面積大小,故能調整氣體離開各氣體出口24d~24f的流速,亦即改變氣體流經基板W表面的化學反應時間長短,藉此有效提升沉積成膜之效率。
如圖3所示,可更清楚瞭解第一噴射構件241與第二噴射構件242之立體結構及相對關係。第一噴射構件241位於第二噴射構件242之下方,且兩者分別呈現圓板狀。於第一噴射構件241之中央有第一導入部2411,又於第二噴射構件242之中央有第二導入部2421。如圖2所示,當第一噴射構件241與第二噴射構件2422等組合時,第一導入部2411係環繞於第二導入部2421外側。該第二導入部2421和第一導入部2411之兩端部中間隙即為氣體入口24b,第一導入部2411和對向面形成構件23中間隙即為氣體入口24a,及第二導入部2421之端部開口即為氣體入口24c。第一噴射構件241相對於第一導入部2411係呈鈍角,又第二噴射構件242相對於第二導入部2421係呈銳角,二者均非直角而能形成該等氣體流道243~245之截面積逐漸改變。
圖4係繪示本申請案又一實施例之氣體噴射器之剖視示意圖。氣體噴射器44係以第一噴射構件441與第二噴射構件442所構成,其包括複數個氣體入口44a~44c、複數個氣體流道443~445及複數個氣體出口44d~44f。第一噴射構件441與第二噴射構件442並非等厚度,於接近氣體出口44e之部分係
厚度逐漸增加,當然也可整個厚度都是逐漸增加。因此,於此實施例中,僅中間氣體流道444下游端部分之截面積朝向氣體出口44e逐漸減少,上方氣體流道443及下方氣體流道445之截面積實質上維持不變。
相較於圖4,圖5係繪示本申請案另一不同實施例之氣體噴射器之剖視示意圖。氣體噴射器54係以第一噴射構件541與第二噴射構件542所構成,其包括複數個氣體入口54a~54c、複數個氣體流道543~545及複數個氣體出口54d~54f。第一噴射構件541與第二噴射構件542並非等厚度,於接近氣體出口54e之部分係厚度逐漸減少,當然也可整個厚度都是逐漸減少。因此,於此實施例中,僅中間氣體流道544下游端部分之截面積朝向氣體出口54e逐漸增加,上方氣體流道543及下方氣體流道545之截面積實質上維持不變。
圖6繪示本申請案另一實施例之氣體噴射器之剖視示意圖。氣體噴射器64係以第一噴射構件641與第二噴射構件642所構成,其包括複數個氣體入口64a~64c、複數個氣體流道643~645及複數個氣體出口64d~64f。第一噴射構件641與第二噴射構件642並非等厚度,於接近氣體出口64e之部分係厚度逐漸減少,然末端之部分仍維持等厚度,即厚度逐漸變化部分未延伸至氣體出口64e。因此,於此實施例中,僅中間氣體流道644之一部分之截面積朝向氣體出口64e逐漸增加,上方氣體流道643及下方氣體流道645之截面積實質上維持不變。
上述實施例藉由改變各氣體流道中接近氣體出口部分之截面積大小,故能調整氣體離開各氣體出口的流速,亦即改變氣體流經基板W表面的化學反應時間長短,藉此有效提升沉積成膜之效率。
如前面實施例所示,氣體出口噴射出氣體之方向係實質上平行於晶圓之表面,另氣體出口噴射出氣體之方向垂直於晶圓之表面亦為本案之保護範圍。圖7繪示本申請案另一實施例之垂直型氣體噴射器之剖視示意圖。氣體噴射器74係以第一噴射構件741與第二噴射構件742所構成,其包括複數個氣體流道743~744及複數個氣體出口74d~74e。第一噴射構件741並非等厚度,於接近氣體出口74d之部分係厚度逐漸減少,其厚度逐漸部分延伸至氣體出口74d。因此,於此實施例中,僅中間氣體流道743之一部分之截面積朝向氣體出口74d逐漸增加,外圍氣體流道744之截面積實質上維持不變。
圖8A繪示圖8中沿I-I剖面線之剖面示意圖,又圖8B繪示圖8中沿II-II剖面線之剖面示意圖。如圖8A所示,第一噴射構件741與第二噴射構件742係兩個同心圓之管狀體。二者之間的間隙為外圍氣體流道744,又管狀第一噴射構件741中為氣體流道743。由此兩剖面示意圖更可知第一噴射構件741之厚度變化。
此實施例雖例示具兩個氣體流道之氣體噴射器,然本申請案並未限定氣體流道之數目,亦即複數個或至少兩個氣體流道均為本申請案之保護範圍。圖8繪示本申請案另一實施例之垂直型氣體噴射器之剖視示意圖。氣體噴射器94係以第一噴射構件941、第二噴射構件942與第三噴射構件946所構成,其包括複數個氣體流道943~945及複數個氣體出口94d~94f。第一噴射構件941並非等厚度,於接近氣體出口94d之部分係厚度逐漸減少,然末端之部分仍維持等厚度,即厚度逐漸變化部分未延伸至氣體出口94d。於此實施例中,第二噴射構件942之厚度不變,但朝向氣體出口94e漸縮或向內傾斜。另,
第三噴射構件946也非等厚度,於接近氣體出口94f之部分係厚度逐漸增加,厚度逐漸變化部分係延伸至氣體出口94f。因此,氣體流道943之一部分之截面積朝向氣體出口94d逐漸增加,又氣體流道944之截面積朝向氣體出口94e逐漸增加,最外圍氣體流道945之截面積朝向氣體出口94f呈現兩段式減少。雖然此實施例中氣體流道943~945均有截面積改變,實際上應視沉積製程之需求和條件而選擇氣體流道之改變數量,或是調整截面積之改變方式。
本申請案之垂直型氣體噴射器可以應用及任意組合前述水平型氣體噴射器中各氣體流道之截面積改變方式,並不受上述實施例之限制。藉由改變各氣體流道中接近氣體出口部分之截面積大小,故能調整氣體離開各氣體出口的流速,亦即改變氣體流經基板表面的化學反應時間長短,藉此有效提升沉積成膜之效率。
本發明之技術內容及技術特點已揭示如上,然而熟悉本項技術之人士仍可能基於本發明之教示及揭示而作種種不背離本發明精神之替換及修飾。因此,本發明之保護範圍應不限於實施例所揭示者,而應包括各種不背離本發明之替換及修飾,並為以下之申請專利範圍所涵蓋。
Claims (20)
- 一種用於半導體製程之氣體噴射器,包含:複數個氣體入口,導入複數種氣體;複數個氣體出口,相對於一待沉積表面係平行地向外噴射出該複數個氣體;複數個氣體流道,分別連接該複數個氣體入口至該複數個氣體出口,並輸送該複數個氣體至相應之該氣體出口;以及複數個噴射構件,分隔該等氣體流道形成獨立的流道;其中該複數個氣體流道中至少一者之一部分之截面積相對於該氣體出口係逐漸改變。
- 如請求項1所述之用於半導體製程之氣體噴射器,其中該複數個氣體流道中至少一者之一部分之截面積相對於該氣體出口係漸增或漸減。
- 如請求項1所述之用於半導體製程之氣體噴射器,其中該氣體流道具有改變截面積之該部分係延伸至該氣體出口。
- 如請求項1所述之用於半導體製程之氣體噴射器,其中該氣體流道具有改變截面積之該部分係未延伸至該氣體出口。
- 如請求項1所述之用於半導體製程之氣體噴射器,其中於該氣體流道具有改變截面積之該部分中該等噴射構件中至少一者之厚度係漸增或漸減。
- 如請求項1所述之用於半導體製程之氣體噴射器,其中該複數個氣體出口中一者係位於中央之開口,其他係圍繞該中央之開口的環狀開口。
- 如請求項6所述之用於半導體製程之氣體噴射器,其中該位於中央之開口及環狀開口係以同心排列。
- 如請求項1所述之用於半導體製程之氣體噴射器,其中藉由該截面積相對於該氣體出口逐漸改變,以調整該氣體離開該氣體出口的流速,從而改變該複數種氣體的化學反應時間長短。
- 如請求項1所述之用於半導體製程之氣體噴射器,其中該複數種氣體係III族原料氣體及載送氣體之混合及H2/N2/V族原料氣體之混合。
- 一種用於半導體製程之成膜裝置,包含:一反應腔,包括複數個基板保持構件;以及一氣體噴射器,與該等基板保持構件之公轉中心軸對準,包括:複數個氣體入口,導入複數種氣體;複數個氣體出口,水平地向該等基板保持構件噴射出該複數個氣體;複數個氣體流道,分別連接該複數個氣體入口至該複數個氣體出口,並輸送該複數個氣體至相應之該複數個氣體出口;及複數個噴射構件,分隔該等氣體流道形成獨立的流道;其中該複數個氣體流道中至少一者之一部分之截面積相對於該氣體出口係逐漸改變。
- 如請求項10所述之用於半導體製程之成膜裝置,其中該複數個氣體流道中至少一者之一部分之截面積相對於該氣體出口係漸增或漸減。
- 如請求項10所述之用於半導體製程之成膜裝置,其中該氣體流道具有改變截面積之該部分係延伸至該氣體出口。
- 如請求項10所述之用於半導體製程之成膜裝置,其中該氣體流道具有改變截面積之該部分係未延伸至該氣體出口。
- 如請求項10所述之用於半導體製程之成膜裝置,其中於該氣體流道具有改變截面積之該部分中該等噴射構件中至少一者之厚度係漸增或漸減。
- 如請求項10所述之用於半導體製程之成膜裝置,其中該複數個氣體出口中一者係位於中央之開口,其他係圍繞該中央之開口的環狀開口。
- 如請求項10所述之用於半導體製程之成膜裝置,其中該氣體出口噴射出該氣體之方向係平行於該等基板保持構件之表面。
- 如請求項15所述之用於半導體製程之成膜裝置,其中該位於中央之開口及環狀開口係以同心排列。
- 如請求項10所述之用於半導體製程之成膜裝置,其中藉由該截面積相對於該氣體出口逐漸改變,以調整該氣體離開該氣體出口的流速,從而改變該複數種氣體的化學反應時間長短。
- 如請求項10所述之用於半導體製程之成膜裝置,其中該複數種氣體係III族原料氣體及載送氣體之混合及H2/N2/V族原料氣體之混合。
- 一種用於半導體製程之成膜裝置,包含:一反應腔,包括一承載盤及一相對於該承載盤之對向面形成構件;以及一氣體噴射器,與該承載盤之中心軸對準,以平行於該承載盤之表面的方向噴射出氣體,包括:複數個噴射構件,係設置於該承載盤及該對向面 形成構件之間;及複數個氣體流道,係由該複數個噴射構件分隔該承載盤及該對向面形成構件之間的空間所形成獨立之氣體輸送路徑;其中該複數個氣體流道中至少一者之一部分之截面積係逐漸增加或減少。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105125689A TWI624561B (zh) | 2016-08-12 | 2016-08-12 | 用於半導體製程之氣體噴射器及成膜裝置 |
CN201611064724.8A CN107723681B (zh) | 2016-08-12 | 2016-11-28 | 用于半导体工艺的气体喷射器及成膜装置 |
US15/590,712 US10801110B2 (en) | 2016-08-12 | 2017-05-09 | Gas injector for semiconductor processes and film deposition apparatus |
JP2017146575A JP6437604B2 (ja) | 2016-08-12 | 2017-07-28 | 半導体プロセス用のガス噴射器及び成膜装置 |
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CN101924023A (zh) * | 2009-06-09 | 2010-12-22 | 日本派欧尼株式会社 | Iii族氮化物半导体的气相生长装置 |
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TW201009106A (en) * | 2008-08-22 | 2010-03-01 | Gang Li | Chemical vapor deposition reactor and chemical vapor deposition method |
TW201346065A (zh) * | 2012-05-11 | 2013-11-16 | Advanced Micro Fab Equip Inc | 氣體噴淋頭、其製造方法及薄膜生長反應器 |
TW201416486A (zh) * | 2012-07-06 | 2014-05-01 | Tokyo Electron Ltd | 成膜裝置及成膜方法 |
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US20180044792A1 (en) | 2018-02-15 |
TW201805477A (zh) | 2018-02-16 |
CN107723681B (zh) | 2022-01-07 |
US10801110B2 (en) | 2020-10-13 |
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