201009106 九、發明說明： 【發明所屬之技術領域】 本發明主要涉及一種用於化學氣相殿積的反應器和一種使用 該反應器進行化學氣相澱積的方法，進一步是指該化學氣相澱積 反應器包括一種用於在一個或多個晶態或非晶態襯底表面澱積 (又稱為磊晶）單層或多層晶態或非晶態結構的圓柱形反應腔。 該圓柱形反應腔包含一圓柱形頂蓋支撐和一環形氣體擴散盤可以 簡化大型化學氣相澱積反應器的設計和結構，降低製造和使用大 型化學氣相澱積反應器的成本。該圓柱形反應腔能實現多股氣流 沿著與襯底表面平行或與襯底表面成一定角度的徑向方向和另一 股氣流沿著與襯底表面垂直的方向進入反應腔。垂直氣流可抑制 晶態或非晶態襯底表面上方的熱對流，使進入反應腔的氣流能在 晶態或非晶態概底表面形成並保持層流狀態β由不同方向引入反 應腔的不同反應劑在晶態或非晶態襯底表面附近混合可縮短不同 反應劑之間的氣相反應時間，提升化學氣相反應的效率，降低反 應劑的消耗，和提高化學氣相澱積的單層或多層晶態或非晶態結 構的質量及其均勻性，重複性，再現性和一致性等。 【先前技術】 為了提升質量和降低成本，化學氣相殿積反應器的結構不斷 優化’方法精改進’反應賴尺寸也補敎。為抑制反應腔 内的熱雌’減少反__氣城應，和保持化學氣相澱積結 構的均勻性，重複性’再現性和—雌，常見的化學氣相澱積反 應器的結構變得越來越複雜，製造和使用成本也變得越來越高。 -種常見的稱之為行星式化學氣減積反絲側面結構如圖 1所不。物星式化學氣相崎反應^包括可進行化學氣相殿積的 201009106 圓柱形反應腔122，加裝在反應腔頂蓋101上的石英盤1〇4，其間 有氣體冷卻的間隙120，中央氣體導入喷嘴1〇7，可旋轉石墨盤 106 ’可旋轉石墨盤1〇6上加載有若干衛星舟127，可旋轉石墨盤 106下面有加熱裝置126,以及圍繞石墨盤1〇6外側的尾氣收集環 103。 ' 在使用該行星式反應器實施化學氣相澱積時，幾股由元素週 期表中V族反應劑和ΠΙ反應劑組成的氣流分別經由中央氣體導 入喷嘴107上各自的喷口進入反應腔丨22内。中央氣體導入喷嘴 φ 1〇7和尾氣收集環103位於石墨盤106的上方，使得由中央氣體導 入喷嘴107導入的氣體能保持層流狀態並沿著徑向由内向外方向 水平進入尾氣收集環103。 該V族反應劑與III反應劑在氣相會發生反應並形成微小顆 粒和惰性衍生物，使得反應劑，特別是決定殿積速度的HI族反 應劑，沿氣體流動方向不斷減少，導致化學氣相殿積速度也沿著 氣流方向不斷下降（該現象也稱為反應劑耗盡效應）。對於圓柱形 反應腔，當氣體由内向外沿徑向方向流動時，其圓周面積的增加 φ 也會使反應劑在氣相中的質量密度和氣體流速不斷變小，導致化 學氣相澱積速度的進一步下降（該現象也稱為氣流發散效應），澱 積的單層或多層結構的均勻性就會很差。 一種常用的消除反應劑耗盡效應和氣流發散效應影響的手段 是提升氣流速度來減少氣流方向的反應劑濃度梯度，但其缺點是 化學氣相澱積效率很低，耗源很多。另一種常用的用於補償反應 劑耗盡效應和氣流發散效應影響的辦法是旋轉襯底或旋轉放置襯 底的衛星舟。如圖1所示，石墨盤106 —般以每分鐘1〇轉左右的 速度旋轉，衛星舟127 —般以每分鐘50轉左右的速度旋轉。製造 6 201009106 和使用可旋轉的大尺寸石墨盤十分困難也十分昂貴，這已經影響 到行星式反應器反應腔中石墨盤尺寸的進一步放大，限制了行星 式反應器反應腔單次可放置襯底片容量的進一步增加。 由圖1所示’反應腔頂蓋上由於沒有垂直方向的氣流導入， 使得徑向氣流不可避免地會在頂蓋表面下安裝的石英盤1〇4表面 不斷累積澱積物，它不僅消耗反應劑，而且不斷累積的表面澱積 會對氣相殿積過程產生不可預見的影響。此外，由於頂蓋上裝有 中央氣體導入喷嘴107和石英盤1〇4,使得頂蓋結構比較複雜，每 Ο 次化學氣相澱積後無法徹底清理反應腔頂蓋ιοί，中央氣體導入喷 嘴107和石英盤104 ’繼而無法確保化學氣相澱積過程的重複性， 再現性和一致性。此外，反應腔頂蓋1〇1中央由於缺乏必要的支 撐，當反應腔122處於低壓狀態時，反應腔頂蓋ι〇1會發生變形， 其變形程度隨著圓周尺寸的增加而增加，使得反應腔腔體的設計 與製造變得更加複雜和昂貴。 另一種常用的稱之為渦盤式化學氣相澱積反應器侧面結構如 圖2所不。該渦盤式化學氣相澱積反應器包括可進行化學氣相澱 # 積的圓柱形反應腔222 ’腔内有進氣法蘭204，襯底載盤206，加 熱裝置226 ’和位於圓柱型反應腔底部的尾氣排放口 203，其中襯 底載盤206以每分鐘500到15〇〇轉的速度高速旋轉，所有氣體經 由進氣法蘭204垂直由反應腔頂部導入反應腔222内，加熱裝置 226放置在襯底載盤206下方，並可加熱襯底載盤206到指定溫 度’襯底載盤206上有若干凹坑，每個凹坑一般放置一片襯底2〇〇。 由於垂直氣流均勻覆蓋了整個襯底載盤206，以及進氣法蘭 204遠離被加熱的襯底載盤206，反應劑耗盡效應和氣流發散效應 以及在進氣法蘭204下表面澱積對渦盤反應腔222内的化學氣相 7 201009106 殿積過程影響較小。通常無須旋轉襯底或旋轉放置襯底的衛星舟 也可能實現均勻的化學氣相_。但由於進氣法蘭204上進氣通 道有限，為了在襯底表面有足夠均勻的氣體混合，該圓柱形反應 腔222 _有一定的高度。該圓柱形反應腔222直徑越大，其所 要求的面度就越高’特別是在高氣壓和襯底載盤2〇6溫度很高時， 該圓柱形反應腔222内就會發生嚴重的熱對流，並引發渦流。為 了抑制熱雌，通常不得不使驗大的氣體流量和高速換轉概底 載盤206，其負面效應就是氣鱧耗用增加。特別是當概底載盤2〇6 • 越來越大時，高速旋轉襯底載盤206很難避免其搖擺和抖動，以 致無法正常執行化學氣相澱積過程。低壓下，反應腔頂蓋2〇1和 進氣法蘭204的變形問題也成為進一步加大反應腔徑向尺寸的制 約因素。 另一種常用的稱之為喷淋頭式化學氣相澱積反應器側面結構 如圖3所示。該喷淋頭式化學氣相殿積反應器包括可進行化學氣 相澱積的圓柱形反應腔322，喷淋頭304，襯底載盤306，加熱裝 置326，和位於反應腔底部的尾氣排放口 303。喷淋頭3〇4上有許 φ 多小孔用來導入反應氣體進入反應腔322,襯底載盤306旋轉速度 為5〜100轉/分鐘’位於襯底載盤306下方的加熱裝置326可加熱 襯底載盤306到指定溫度。襯底載盤306上有若干凹坑，每個凹 坑一般放置一片概底。 由於經由喷淋頭304上許多小孔導入反應腔的垂直氣流均勻 覆蓋了整個襯底載盤306，反應劑耗盡效應和氣流發散效應對喷淋 頭式反應腔322内的化學氣相澱積過程影響很小，通常無須旋轉 襯底或旋轉放置襯底的衛星舟也可能實現均勻的化學氣相澱積。 該喷淋頭304上成千上萬個分立的由水管包裹冷卻的小孔可以確 8 201009106 保經由不同小孔進入反應腔的各種反應劑能在襯底表面有足夠均 勻的混合。喷淋頭式化學氣相澱積反應器反應腔322的高度可以 比較低’從而大幅減少反應腔322内的熱對流和氣相反應。但是 隨著反應腔322尺寸的加大，該喷淋頭3〇4上的小孔越來越多， 漏水的風險越來越高’結構越來越複雜，其可靠性也隨之大幅下 降’製造和使用成本己變得越來越高。另一方面，由於該喷淋頭 304十分靠近被加熱的襯底載盤306，使得嗔淋頭304表面不可以 避免地附著許多反應物，成千上萬個分立的小孔限制了每次化學 參 氟相殿積後不此充分清理喷淋頭304表面，繼而無法確保化學氣 相澱積過程的重複性’再現性和一致性》低壓下，該喷淋頭304 變形又會導致該喷淋頭304與襯底載盤306之間的間距不均勻， 熱壓力和機械壓力會過早損壞複雜多孔的喷淋頭304，影響其使用 壽命，也妨礙了喷淋頭304在尺寸上的進一步放大。 另一種稱之為矩形化學氣相澱積反應器的側面結構如圖4所 示。該矩形化學氣相澱積反應器包括一矩形的反應腔422，放置在 反應腔一端的第一氣體導入裝置407,放置在反應腔422頂端的第 φ 二氣體導入裝置404，石墨盤406，加熱裝置426，和放置在反應 腔422另一端的尾氣出口 403»第一氣體導入裝置407在水平方向 引入氣體’第二氣體導入裝置404從垂直方向引入氣體到反應腔 422中，加熱裝置426位於石墨盤406下方。 由圖4可知，由第一氣體導入裝置407進入反應腔422的氣 體可以沿著水平方向平行於石墨盤406的上表面進入尾氣出口 403，而由第二氣體導入裝置404沿垂直方嚮導入的氣體可以抑制 熱對流，使水平導入的氣體始終保持層流狀態。由第一和第二氣 體導入裝置引入的氣流在襯底400附近混合可以大幅減少氣相反 9 201009106 應的發生。矩形反應腔中縱向氣流的反應劑耗盡效應，和橫向反 應腔侧壁對與氣流垂直方向上的反應劑分佈的影響均會造成在縱 向和橫向不均勻的化學氣相澱積。矩形反應腔中的橫向側壁上累 積的澱積物不僅降低化學氣相澱積的效率也會對氣相澱積過程產 生不可預見的影響。橫向側壁和縱向反應劑耗盡效應限制了矩形 反應腔尺寸的擴大以及澱積層均勻性的改善。 很顯然，現有化學氣相澱積反應器存在有本質性的缺陷，如 反應腔内缺少剛性支撐，複雜的頂蓋結構等己無法滿足工業化生 Φ 產的需求，反應腔尺寸的擴大也受到結構和成本上的限制，氣相 反應和熱對流以及沿氣流方向的反應劑耗盡效應，氣流發散效 應，和反應腔側壁效應都使得在該化學氣相澱積反應器反應腔内 進行的化學氣相反應效率低，澱積重複性，再現性和一致性差， 同時又面臨各種配件結構複雜’製造和使用成本高，維護維修困 難，控制過程複‘雜等缺點。 本發明的目的是提供一種能克服現有化學氣相澱積反應器缺 點和不足的化學氣相澱積反應器；本發明的另一個目的是提供一 φ 種化學氣相澱積反應器，該化學氣相澱積反應器具備結構簡單， 產能大’製造和使用成本低等優點；本發明的另一個目的是提供 一種化學氣相澱積反應器，以及使用該化學氣相澱積反應器實施 的化學氣相澱積過程具備重複性，再現性，一致性，以及可控性 好等優點；本發明的另一個目的是提供一種化學氣相澱積反應器 來實施一種化學氣相澱積方法，該方法不僅能克服氣流方向的反 應劑耗盡效應和氣流發散效應，還能有效抑制氣相反應和熱對 流，從而改善化學氣相澱積的均勻性，提高化學氣相澱積的質量 以及化學氣相反應的效率。 201009106 ^ 【發明内容】 根據本發明的化學氣相澱積反應器通常包含一圓柱形反應 腔，該反應腔進一步包含一放置在該圓柱形反應腔底盤中心部位 的圓柱形頂蓋支撐。通常，該圓柱形反應腔和該圓柱形頂蓋支撐 的圓心位置相互重疊。該圓柱形頂蓋支撐通過其頂部支撐住該反 應腔頂蓋内侧的中央部位來有效防止該反應腔頂蓋在低壓下的變 形，從而減少該反應腔頂蓋設計的複雜性和製造與使用成本。 根據本發明的化學氣相澱積反應器通常包含一圓柱形反應 Φ 腔’該反應腔進一步包含一放置在該圓柱形反應腔底盤中心部位 的圓柱形頂蓋支撐和一環形氣體擴散盤。該環形氣體擴散盤將該 圓柱形反應腔分成上下二部分，導入該環形氣體擴散盤上方的氣 流經該環形氣體擴散盤上的通孔以垂直向下的方向進入該環形氣 體擴散盤下方的反應腔’形成一股垂直於環形襯底載盤表面的氣 流。該垂直於該環形襯底載盤表面的氣流可有效抑制該環形襯底 載盤上方的熱對流，使另一股以徑向方向進入該氣體擴散盤下方 反應腔的氣流在該環形襯底載盤表面形成並保持層流狀態。垂直 〇 方向氣流與徑向方向氣流在襯底表面附近混合可減少二者之間在 乳相中的反應時間，提高氣相反應的效率和氣相殿積的質量。由 於垂直氣流並非從該反應腔頂蓋上狀反應腔，從而可簡化該反 應腔頂蓋的設計和減少該反應腔頂蓋的製造與使贼本。垂直向 下的氣流也能有效抑制徑向氣流向上翻騰，減少徑向氣流在該氣 體擴散盤下表_沉積，改善化學氣相㈣過程的重複性，再現 性和一致性。 根據本發明的化學氣相澱積反應器通常包含一圓柱形反應 腔’該反應職-步包含-放置在__反舰底盤中心部位 201009106 的圓柱形頂蓋支撐和一環形氣體擴散盤。該圓柱形反應腔内可以 實現多股氣流由該圓柱形反應腔的外圍沿徑向向内方向層流到該 圓柱形反應腔的中央。當氣流由外圓周沿徑向向内方向流動時， 圓周截面積不斷減少，氣流速度不斷加快，反應劑的質量密度也 不斷增加。其中，干斷增加的氣流速度使界面層的厚度沿徑向向 内方向不斷減少’由氣相擴散到襯底表面的反應劑會隨之增加。 氣流速度和反應劑質量密度沿徑向向内方向的增加（又稱為氣流 會聚效應）共同補償了由於反應劑耗盡效應所引起的化學氣相澱 積速度的下降。根據本發明的化學氣相澱積反應器可以不旋轉襯 底載盤或襯底本身也能獲得均勻的化學氣相澱積，從而簡化襯底 載盤的設計，降低襯底載盤和該圓柱形反應腔的製造和使用成 本’進一步提高化學氣相澱積的重複性，再現性和一致性。 通過參照附圖和參考本發明優選實施方案和應用實例的詳細 描述，本發明所述的目的，優點以及其它特性將會變得更加清晰。 【實施方式】 本發明和本發明的各種反應器反應腔實施方案可以通過以下 優選方案的描述得到充分理解，以下優選方案也可視為本發明申 請專利範圍的實例。顯然，應該充分理解到由本發明申請專利範 圍所定義的本發明所涵蓋的内容要比以下描述的優選實施方案更 加廣泛。在不偏離本發明精神和範圍的情況下，借助於平常的技 能可以產生更多的經過變更和修改的實施方案。所以，以下描述 的實施方案僅僅是為了舉例說明而不是用來侷限由本發明申請專 利範圍所定義的本發明的涵蓋範圍。 根據本發明一種實施方案，一化學氣相殿積反應器通常有一 圓柱形反應腔522 (見圖5)。該圓柱形反應腔522有一反應腔頂 12 201009106 蓋501，一反應腔底盤513，一筒狀反應腔側壁511，一圓柱形頂 蓋支撐502，一環形襯底載盤506，一襯底載盤支撐圓管540a和 540b，一氣體導入環507，一環形氣體排出通道503b，一種置在 該環形襯底載盤下方的加熱裝置526,和一放置在該反應腔底盤附 近的排氣孔509。 該圓柱形頂蓋支撐502 —般放置在該反應腔底盤513的中心 部位’該圓柱形頂蓋支撐502和該圓柱形反應腔522的圓心通常 重合在一起（同心圓放置方式）。該圓柱形頂蓋支撐5〇2的頂部支 φ 撐到該反應腔頂蓋501内側的中央部位可有效減輕該反應腔頂蓋 501在低壓下的變形，簡化該反應腔頂蓋5〇1的設計，降低該反應 腔頂蓋501的製造與使用成本’使得該圓柱形反應腔522可以通 過增加反應腔直徑來增加每次可以澱積的襯底數量或襯底面積。 該環形襯底載盤506通常水平放置在襯底載盤支撐圓管54〇a 和540b上，該環形襯底載盤506上有若干凹坑，每種凹坑一般放 置一個襯底片500。 該氣體導入環507通常水平放置在該圓柱形反應腔522的側 φ 壁上部，並位於該反應腔頂蓋501和該環形襯底載盤506之間。 該氣體導入環507通常包含有若干環形氣體喷嘴，如5〇7a，5〇几 和507c，該環形氣體喷嘴一般沿垂直方向按一定間距逐個疊加排 列放置在該氣體導入環507内。由該環形氣體喷嘴導入該反應腔 522的氣流方向通常平行於該環形襯底載盤5〇6表面或與該環形 襯底載盤506表面成小於90度的斜角。該環形氣體喷嘴之間相互 不連通，該些環形氣體喷嘴與各自的供氣單元連接。 該環形氣體排出通道503b圍繞該圓柱形頂蓋支撐5〇2的外 圍。該環形氣體排出通道5〇3b也可以用水平放置在該圓柱形頂蓋 13 201009106 支撐502上部的氣體排出環代替（未在圖5中顯示）。該氣體排出 環位於該反應腔頂蓋501和該環形襯底載盤506之間，以保持由 該氣體導入環507沿徑向由外向内方嚮導入的氣流在進入該氣體 排出環之前保持層流狀態。該氣體排出環或環形氣體排出通道 503b也可以放置在該圓柱形頂蓋支撐5〇2内。 該反應腔頂蓋501下表面可以加裝一保護盤（未在圖5中顯 示）以避免化學氣相澱積過程中有反應物直接澱積在該反應腔頂 蓋501的下表面。 • 使用根據本發明一種實施方案的一種化學氣相澱積反應器反 應腔（如圖5所示）進行化學氣相澱積的一種應用實例可如下所 述。一股主要包含V族反應劑，如NH3，的氣流，另一股主要包含 III族反應劑，如TMGa，TMAl和TMIn，的氣流，以及另一股主要 包含惰性氣體’如Ar，或載氣，如H2, N2,或V族反應劑，如NH3， 或它們的混合物分別從該環形氣體喷嘴5〇7a，507b和507c沿徑 向由外向内方嚮導入到該圓柱形反應腔522中。如圖5所示，所 有氣體在被該環形排氣通道503b排出前，在該環形襯底載盤506 φ 表面形成並保持層流狀態。沿氣流方向，特別是決定澱積速度的 ΠΙ族反應劑的耗盡效應被沿徑向由外向内方向的氣流會聚效應 所補償’使得無需旋轉襯底500也能得到均勻的氣相澱積。結果 可簡化該環形襯底載盤506的設計，並降低其製造和使用成本。 由圖5所示，由於該環形氣體導入環507水平放置在該圓柱形反 應腔522的外側上部，從而可簡化該反應腔頂蓋501的設計，並 降低其製造和使用成本。此外，由於該反應腔頂蓋501沒有任何 氣體導入裝置，每次化學氣相澱積後都可以對該反應腔頂蓋501 内側進行徹底的清理，從而確保化學氣相澱積過程的重複性，再 14 201009106 現性和一致性。 根據本發明一種如圖5所示的化學氣相澱積反應器反應腔的 另一實施方案是將該氣體導入環5〇7水平放置在該圓柱形頂蓋支 撐502的上部（未在圖5中顯示）’並位於該反應腔頂蓋和該 環形襯底載盤506之間。與此同時，該環形氣艘排出通道可以放 置在該圓柱形反應腔522的外圍（未在圖5中顯示）。該環形氣體 排出通道也可以用水平放置在該圓柱形反應腔522側壁上部的氣 體排出環代替（未在圖5中顯示）。該氣體排出環或環形氣體排出 通道也可以放置在該圓柱形反應腔522的侧壁511内。在上述方 案下，一股主要包含V族反應劑，如nh3，的氣流，另一股主要包 含πι族反應劑’如TMGa，TMA1和TMIn，的氣流，以及另一股主 要包含惰性氣體，如Ar，或載氣，如h2，N2，或V族反應劑，如 腿3，或它們的混合物分別從該環形氣體喷嘴沿徑向由内向外方嚮 導入到該圓柱形反應腔522中（未在圖5中顯示）。所有氣體在被 該環形氣體排出通道排出前’在該環形襯底載盤5〇6表面形成並 保持層流狀態。沿氣流方向的耗盡效應，特別是ΠΙ族反應劑的 耗盡效應要求旋轉襯底500方能得到均勻的氣相殿積。 根據本發明另一種實施方案，一化學氣相澱積反應器通常有 一圓柱形反應腔622 (見圖6)。該圓柱形反應腔622有一反應腔 頂蓋601 ’ 一反應腔底盤613，一筒狀反應腔侧壁611，一圓柱形 頂蓋支撑602 ’ 一氣體引入盤604，一環形襯底載盤606，一襯底 載盤支撐圓管640a和640b，一氣體導入環607，一氣體排出環 603 ’ 一放置在該環形襯底載盤下方的加熱裝置626，和一放置在 該反應腔底盤附近的排氣孔609。 該圓柱形頂蓋支撐602 —般放置在該反應腔底盤613的中心 15 201009106 部位’該圓柱形頂蓋支撐602和該圓柱形反應腔622的圓心通常 重合在一起（同心圓放置方式）。該圓柱形頂蓋支撐6〇2的頂部支 撐到該反應腔頂蓋601内侧的中央部位可有效減輕該反應腔頂蓋 601在低壓下的變形，簡化該反應腔頂蓋601的設計，降低該反應 腔頂蓋601的製造與使用成本，使得該圓柱形反應腔622可以通 過增加反應腔直徑來增加每次可以澱積的襯底數量或襯底面積。 該氣體引入盤604放置在該圓柱形反應腔622頂部靠近反應 腔頂蓋601的下側，該氣體引入盤604的下表面612有若干通孔 • 619’通過該通孔619可以提供垂直向下的氣流^該氣體引入盤604 下表面612呈環形分佈的通孔619其徑向方向上的寬度一般不小 於該襯底載盤606上同樣呈環形放置的襯底600在徑向方向上的 寬度，使得由該通孔619上垂直下流的氣體能均勻完整地覆蓋全 部襯底600的表面。該環形襯底載盤606通常水平放置在襯底載 盤支撐圓管640a和640b上，該環形襯底載盤606上有若干凹坑， 每種凹坑一般放置一個襯底片6〇〇。 該氣體導入環607通常水平放置在該圓柱形反應腔622的側 φ 壁上部，並位於該氣體引入盤604和該環形襯底載盤606之間。 每個氣體導入環607通常包含有若干環形氣體喷嘴，如6〇7a和 607b，該環形氣體喷嘴一般沿垂直方向按一定間距逐個疊加排列 放置在該氣體導入環607内。由該環形氣體喷嘴導入該反應腔622 的氣流方向通常平行於該環形襯底載盤6〇6表面或與該環形襯底 載盤606表面成小於90度的斜角。該環形氣體喷嘴之間相互不連 通，每一個環形氣體喷嘴與各自的供氣單元連接。 該氣體排出環603水平係放置在該圓柱形頂蓋支撐6〇2的上 部。該氣趙排出環603位於該氣體引入盤604和該環形襯底載盤 201009106 606之間’以保持由該氣體導入環607沿徑向由外向内方嚮導入的 亂流在進入該氣體排出環603之前保持層流狀態。為簡化設計， 該氣體排出環6〇3也可以用圍繞該圓柱形頂蓋支撐602的環形氣 體排出通道代替（未在圖6中顯示）。該氣體排出環603或環形氣 體排出通道也可以放置在該圓柱形頂蓋支撐602内。 使用根據本發明另一種實施方案的一種化學氣相澱積反應器 反應腔（如圖6所示）進行化學氣相澱積的一種應用實例可如下 所述。一股主要包含V族反應劑，如nh3,的氣流和另一股主要包 族反應劑’如TMGa，TMA1和TMIn，的氣流分別從該環形氣 體唢嘴607a和607b沿徑向由外向内方嚮導入到該圓柱形反應腔 622中。另一股主要包含惰性氣體，如Ar，或載氣，如Hz，n2，或 V族反應劑，如腿3 ’或ΠΙ族反應劑，如TMGa，ΤΜΑι和TMIn， 或它們的混合物從該氣體引入盤6〇4上的通孔619沿垂直於該襯 底載盤606表面方向向下引入到該圓柱形反應腔622内。如圖6 所示’垂直氣流能夠有效抑制熱對流，使得徑向氣流在整個反應 腔内保持層流狀況，直到所有氣體經該氣體排出環603排出該反 φ 應腔622。垂直氣流和徑向氣流相互交叉，並在該環形襯底載盤 606附近相遇混合，減少了不同反應劑之間發生氣相反應的時間， 可以提高氣相反應的效率和氣相澱積的質量。該ΙΠ族反應劑沿 徑向由外向内方向流動所發生的耗盡效應被氣流會聚效應所補 償’無需旋轉襯底600也能獲得均勻的化學氣相澱積，從而可簡 化該襯底載盤606的設計’降低該圓柱形反應腔622的製造和使 用成本。 使用根據本發明另一種實施方案的一種化學氣相澱積反應器 反應腔（如圖6所示）進行化學氣相澱積的另一種應用實例可如 17 201009106 下所述。一股主要包含V族反應劑，如NH3，的氣流從該環形氣體 喷嘴607a沿徑向由外向内方嚮導入到該圓柱形反應腔622中。另 一股主要包含III族反應劑，如TMGa，TMA1和TMIn，的氣流從該 氣體引入盤604上的通孔619沿垂直於該襯底載盤606表面方向 向下引入到該圓柱形反應腔622内。如圖6所示，垂直氣流能夠 有效抑制熱對流’使得徑向氣流在整個反應腔内保持層流狀況， 直到所有氣體經該氣體排出環603排出該反應腔622。垂直氣流和 控向氣流相互交叉’並在該環形襯底載盤606附近相遇混合，減 φ 少了不同反應劑之間發生氣相反應的時間，可以提高氣相反應的 效率和氣相澱積的質量。由該氣體引入盤6〇4導入的πΐ族反應 劑能均勻地覆蓋到整個襯底載盤606的表面，即使該襯底600不 旋轉也能獲得均勻的化學氣相澱積，從而簡化該襯底載盤606的 設計’降低該圓柱形反應腔622的製造和使用成本。 使用根據本發明另一種實施方案的一種化學氣相澱積反應器 反應腔（如圖6所示）進行化學氣相澱積的另一種應用實例可如 下該。一股主要包含III族反應劑，如TMGa，TMA1和TMIn,的氣 φ 流從該環形氣體喷嘴607b沿徑向由外向内方嚮導入到該圓柱形反 應腔622中。另一股主要包含v族反應劑，如NH3，的氣流從該氣 艎引入盤604上的通孔619沿垂直於該襯底載盤606表面方向向 下引入到該圓柱形反應腔622内。如圖6所示，垂直氣流能夠有 效抑制熱對流，使得徑向氣流在整個反應腔内保持層流狀況，直 到所有氣體經該氣體排出環6〇3排出該反應腔622。該垂直和徑向 氣流在進入該圓柱形反應腔622之前完全分離，交叉氣流在該襯 底載盤606附近相遇混合，可以降低並抑制氣相反應的發生，提 高氣相反應效率和氣相澱積的質量。該III族反應劑沿徑向由外 201009106 向内方向流動所發生的耗盡效應被氣流會聚效應所補償，所以無 需紅轉概底600也能獲得均勻的化學氣相殿積，從而可簡化該概 底載盤606的設計和降低該圓柱形反應腔622的製造和使用成本。 根據本發明另一種實施方案’一種化學氣相搬積反應器通常 有一圓柱形反應腔722 (見圖7)。該圓柱形反應腔722有一反應 腔頂蓋701，一反應腔底盤713，一筒狀反應腔側壁711，一圓柱 形頂蓋支撐702，一氣體引入盤704 ’ 一環形襯底載盤706，一襯 底載盤支撐圓管740a和740b，一氣體導入環707，一環形氣體排 φ 出通道7〇3a ’ 一放置在該環形襯底載盤下方的加熱裝置726，和 一放置在該反應腔底盤附近的排氣孔709。 該圓柱形頂蓋支撐702 —般放置在該反應腔底盤713的中心 部位’該圓柱形頂蓋支撐702和該圓柱形反應腔722的圓心通常 重合在一起（同心圓放置方式）。該圓柱形頂蓋支撐702的頂部支 撐到該反應腔頂蓋701内側的中央部位可有效減輕該反應腔頂蓋 701在低壓下的變形，簡化該反應腔頂蓋701的設計，降低該反應 腔頂蓋701的製造與使用成本，使得該圓柱形反應腔722可以通 鲁過增加反應腔直徑來增加每次可以澱積的襯底數量或襯底面積。 該氣體引入盤704放置在該圓柱形反應腔722頂部靠近反應 腔頂蓋701的下側，該氣體引入盤704的下表面712有若干通孔 719,通過該通孔719可以提供垂直向下的氣流。該氣體引入盤704 下表面呈環形分佈的通孔719其徑向方向上的寬度一般不小於該 襯底載盤706上同樣呈環形放置的襯底700在徑向方向上的寬 度，使得由該通孔719上垂直下流的氣體能均勻完整地覆蓋全部 襯底700的表面。 該環形襯底載盤706通常水平放置在襯底載盤支撐圓管740a和 201009106 740b上，該環形襯底載盤7〇6 一個襯底片700。 上有若干凹坑，每種凹坑一般放置201009106 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention generally relates to a reactor for chemical vapor deposition and a method for chemical vapor deposition using the reactor, further referring to the chemical vapor phase The deposition reactor includes a cylindrical reaction chamber for depositing (also referred to as epitaxial) single or multi-layer crystalline or amorphous structures on one or more crystalline or amorphous substrates. The cylindrical reaction chamber comprising a cylindrical header support and an annular gas diffusion disk simplifies the design and construction of a large chemical vapor deposition reactor, reducing the cost of manufacturing and using a large chemical vapor deposition reactor. The cylindrical reaction chamber enables multiple streams to enter the reaction chamber in a radial direction parallel to the substrate surface or at an angle to the substrate surface and another gas stream in a direction perpendicular to the substrate surface. The vertical gas flow can suppress the thermal convection above the surface of the crystalline or amorphous substrate, so that the gas flow entering the reaction chamber can be formed on the surface of the crystalline or amorphous surface and maintain the laminar flow state β introduced into the reaction chamber from different directions. Mixing the reactants in the vicinity of the surface of the crystalline or amorphous substrate can shorten the gas phase reaction time between different reactants, improve the efficiency of the chemical vapor phase reaction, reduce the consumption of the reactants, and increase the chemical vapor deposition. The quality and uniformity, repeatability, reproducibility and consistency of layers or layers of crystalline or amorphous structures. [Prior Art] In order to improve the quality and reduce the cost, the structure of the chemical vapor phase reactor is continuously optimized, and the method is improved. In order to suppress the heat in the reaction chamber, the anti-reduction of the chemical vapor deposition structure, the repeatability of the reproducibility and the growth of the chemical vapor deposition reactor Increasingly complex, manufacturing and use costs are also getting higher and higher. - A common type of planetary chemical gas depletion reverse side structure is shown in Figure 1. The star-shaped chemical gas phase reaction includes a 201009106 cylindrical reaction chamber 122 for chemical vapor deposition, a quartz disk 1〇4 attached to the reaction chamber top cover 101, a gas-cooled gap 120, a central gas Introducing nozzle 1〇7, rotatable graphite disk 106' The rotatable graphite disk 1〇6 is loaded with a number of satellite boats 127, the rotatable graphite disk 106 has heating means 126 under it, and an exhaust gas collecting ring around the outside of the graphite disk 1〇6 103. When chemical vapor deposition is carried out using the planetary reactor, several gas streams composed of a group V reactant and a ruthenium reactant in the periodic table of the elements enter the reaction chamber 22 through respective nozzles of the central gas introduction nozzle 107, respectively. Inside. The central gas introduction nozzle φ 1〇7 and the exhaust gas collection ring 103 are positioned above the graphite disk 106 such that the gas introduced by the central gas introduction nozzle 107 can maintain a laminar flow state and horizontally enter the exhaust gas collection ring 103 from the inside to the outside in the radial direction. . The Group V reactant reacts with the III reactant in the gas phase to form fine particles and inert derivatives, so that the reactants, especially the HI group reactants which determine the velocity of the temple, are continuously reduced along the gas flow direction, resulting in chemical gas. The velocity of the phase is also decreasing along the direction of the airflow (this phenomenon is also known as the reactant depletion effect). For a cylindrical reaction chamber, when the gas flows from the inside to the outside in the radial direction, the increase in the circumferential area φ also causes the mass density and gas flow rate of the reactant in the gas phase to become smaller, resulting in a chemical vapor deposition rate. The further drop (this phenomenon is also known as the airflow divergence effect), the uniformity of the deposited single or multi-layer structure will be poor. One common means of eliminating the effects of reactant depletion and airflow divergence is to increase the gas flow rate to reduce the reactant concentration gradient in the direction of the gas flow, but the disadvantage is that the chemical vapor deposition is very inefficient and consumes a lot. Another commonly used method for compensating for the effects of reactant depletion and airflow divergence is to rotate the substrate or rotate the satellite boat on which the substrate is placed. As shown in Fig. 1, the graphite disk 106 is generally rotated at a speed of about 1 turn per minute, and the satellite boat 127 is generally rotated at a speed of about 50 revolutions per minute. Manufacturing 6 201009106 and the use of a rotatable large-size graphite disk are difficult and expensive, which has affected the further enlargement of the size of the graphite disk in the reaction chamber of the planetary reactor, limiting the single-stage placement of the substrate in the reaction chamber of the planetary reactor. A further increase in capacity. As shown in Figure 1, the top of the reaction chamber is not introduced by the vertical direction of the airflow, so that the radial airflow inevitably accumulates deposits on the surface of the quartz disk 1〇4 installed under the surface of the top cover, which not only consumes the reaction. Agents, and the constant accumulation of surface deposits can have unpredictable effects on the gas phase deposition process. In addition, since the top cover is provided with the central gas introduction nozzle 107 and the quartz disk 1〇4, the structure of the top cover is complicated, and the reaction chamber top cover ιοί cannot be completely cleaned after each chemical vapor deposition, and the central gas introduction nozzle 107 And the quartz disk 104' in turn does not ensure repeatability, reproducibility and consistency of the chemical vapor deposition process. In addition, due to the lack of necessary support in the center of the reaction chamber top cover 1〇1, when the reaction chamber 122 is in a low pressure state, the reaction chamber top cover ι〇1 is deformed, and the degree of deformation increases as the circumferential size increases, so that the reaction The design and manufacture of the cavity becomes more complicated and expensive. Another commonly used side structure of a scroll-type chemical vapor deposition reactor is shown in Fig. 2. The scroll-type chemical vapor deposition reactor comprises a cylindrical reaction chamber 222 capable of performing chemical vapor deposition. The chamber has an inlet flange 204, a substrate carrier 206, a heating device 226' and a cylindrical type. The exhaust gas discharge port 203 at the bottom of the reaction chamber, wherein the substrate carrier 206 rotates at a high speed of 500 to 15 revolutions per minute, and all the gas is vertically introduced into the reaction chamber 222 from the top of the reaction chamber via the intake flange 204, and the heating device 226 is placed under the substrate carrier 206 and can heat the substrate carrier 206 to a specified temperature. The substrate carrier 206 has a plurality of dimples, each of which is typically placed in a substrate. Since the vertical gas flow uniformly covers the entire substrate carrier 206, and the inlet flange 204 is away from the heated substrate carrier 206, the reactant depletion effect and the gas flow diverging effect as well as the deposition on the lower surface of the inlet flange 204 The chemical vapor phase 7 in the scroll reaction chamber 222, 201009106, has less influence on the accumulation process. It is also possible to achieve a uniform chemical vapor phase without the need to rotate the substrate or rotate the satellite boat on which the substrate is placed. However, since the intake passages on the intake flange 204 are limited, the cylindrical reaction chamber 222 has a certain height in order to have a sufficiently uniform gas mixture on the surface of the substrate. The larger the diameter of the cylindrical reaction chamber 222, the higher the required degree of the surface. Especially in the case of high atmospheric pressure and high temperature of the substrate carrier 2〇6, serious occurrence occurs in the cylindrical reaction chamber 222. Heat convection and induce eddy currents. In order to suppress the hot female, it is usually necessary to make the large gas flow rate and the high speed change of the bottom carrier 206, and the negative effect is that the gas consumption is increased. In particular, when the bottom carrier 2〇6 is getting larger and larger, the high-speed rotation of the substrate carrier 206 is difficult to avoid its wobble and jitter, so that the chemical vapor deposition process cannot be performed normally. At low pressure, the deformation of the reaction chamber top cover 2〇1 and the intake flange 204 also becomes a constraint factor for further increasing the radial dimension of the reaction chamber. Another commonly used side structure of a sprinkler type chemical vapor deposition reactor is shown in Fig. 3. The sprinkler type chemical vapor deposition reactor comprises a cylindrical reaction chamber 322 capable of chemical vapor deposition, a shower head 304, a substrate carrier 306, a heating device 326, and an exhaust gas emission at the bottom of the reaction chamber. Port 303. The sprinkler head 3〇4 has a plurality of small holes for introducing the reaction gas into the reaction chamber 322, and the substrate carrier 306 has a rotation speed of 5 to 100 rpm. The heating device 326 located under the substrate carrier 306 can be The substrate carrier 306 is heated to a specified temperature. The substrate carrier 306 has a plurality of dimples, each of which is generally provided with a single bottom. Since the vertical gas flow introduced into the reaction chamber via a plurality of small holes in the showerhead 304 uniformly covers the entire substrate carrier 306, the reactant depletion effect and the gas flow divergence effect on the chemical vapor deposition in the showerhead reaction chamber 322. The process has little impact and it is also possible to achieve uniform chemical vapor deposition without the need to rotate the substrate or rotate the satellite boat on which the substrate is placed. The sprinkler head 304 has thousands of discrete holes that are cooled by a water tube to ensure that the various reactants entering the reaction chamber through different orifices have sufficient uniform mixing on the surface of the substrate. The height of the reaction chamber 322 of the showerhead type chemical vapor deposition reactor can be relatively low, thereby greatly reducing the heat convection and gas phase reactions within the reaction chamber 322. However, as the size of the reaction chamber 322 increases, more and more small holes are formed in the shower head 3〇4, and the risk of water leakage is getting higher and higher. 'The structure is more and more complicated, and the reliability thereof is also greatly reduced' Manufacturing and use costs have become higher and higher. On the other hand, since the showerhead 304 is in close proximity to the heated substrate carrier 306, the surface of the showerhead 304 is inevitably attached to many reactants, and thousands of discrete apertures limit each chemistry. After the fluorine phase is accumulated, the surface of the shower head 304 is not sufficiently cleaned, and then the repeatability 'reproducibility and consistency of the chemical vapor deposition process cannot be ensured." At the low pressure, the deformation of the shower head 304 causes the spray. The spacing between the head 304 and the substrate carrier 306 is not uniform, and thermal and mechanical stress can prematurely damage the complex porous showerhead 304, affecting its useful life and also hindering further enlargement of the size of the showerhead 304. . Another side structure called a rectangular chemical vapor deposition reactor is shown in Fig. 4. The rectangular chemical vapor deposition reactor comprises a rectangular reaction chamber 422, a first gas introduction device 407 placed at one end of the reaction chamber, a φ second gas introduction device 404 placed at the top end of the reaction chamber 422, and a graphite disk 406 for heating. The device 426, and the exhaust gas outlet 403» disposed at the other end of the reaction chamber 422, the first gas introduction device 407 introduces a gas in the horizontal direction. The second gas introduction device 404 introduces gas from the vertical direction into the reaction chamber 422. The heating device 426 is located in the graphite. Below the disk 406. As can be seen from FIG. 4, the gas entering the reaction chamber 422 by the first gas introduction means 407 can enter the exhaust gas outlet 403 in parallel with the upper surface of the graphite disk 406 in the horizontal direction, and be introduced in the vertical direction by the second gas introduction means 404. The gas can suppress the heat convection and keep the horizontally introduced gas in a laminar state. The mixing of the gas stream introduced by the first and second gas introduction means in the vicinity of the substrate 400 can substantially reduce the occurrence of gas. The reactant depletion effect of the longitudinal gas flow in the rectangular reaction chamber and the effect of the side walls of the lateral reaction chamber on the distribution of the reactants in the vertical direction of the gas flow result in chemical vapor deposition in the longitudinal and transverse directions. The deposition of the lateral sidewalls in the rectangular reaction chamber not only reduces the efficiency of the chemical vapor deposition but also has an unpredictable effect on the vapor deposition process. The lateral sidewall and longitudinal reactant depletion effects limit the enlargement of the rectangular reaction chamber size and the improvement of the uniformity of the deposited layer. Obviously, the existing chemical vapor deposition reactor has inherent defects, such as the lack of rigid support in the reaction chamber, the complicated roof structure, etc., which cannot meet the demand of industrial production, and the expansion of the reaction chamber size is also affected by the structure. And cost constraints, gas phase reaction and thermal convection, as well as reactant depletion effects along the gas flow direction, gas flow divergence effects, and reaction chamber sidewall effects all allow chemical gas to be carried out in the reaction chamber of the chemical vapor deposition reactor. The phase reaction efficiency is low, the deposition repeatability, the reproducibility and the consistency are poor, and at the same time, the structure of various accessories is complicated, the manufacturing and use cost is high, the maintenance and repair is difficult, and the control process is complicated. SUMMARY OF THE INVENTION It is an object of the present invention to provide a chemical vapor deposition reactor which overcomes the shortcomings and deficiencies of prior chemical vapor deposition reactors; another object of the present invention is to provide a φ chemical vapor deposition reactor which provides The vapor phase deposition reactor has the advantages of simple structure, high productivity, low manufacturing and use cost, and another object of the present invention is to provide a chemical vapor deposition reactor and the use of the chemical vapor deposition reactor. The chemical vapor deposition process has the advantages of repeatability, reproducibility, consistency, and good controllability; another object of the present invention is to provide a chemical vapor deposition reactor for performing a chemical vapor deposition method, The method can not only overcome the reactant depletion effect and the gas flow divergence effect in the gas flow direction, but also effectively suppress the gas phase reaction and the heat convection, thereby improving the uniformity of the chemical vapor deposition, improving the quality of the chemical vapor deposition and the chemistry. The efficiency of the gas phase reaction. 201009106 ^ SUMMARY OF THE INVENTION A chemical vapor deposition reactor according to the present invention generally comprises a cylindrical reaction chamber further comprising a cylindrical cap support placed at the center of the cylindrical reaction chamber chassis. Typically, the cylindrical reaction chamber and the center of the cylindrical cap support overlap each other. The cylindrical top cover supports the central portion of the inner side of the reaction chamber cover through the top thereof to effectively prevent the deformation of the reaction chamber cover under low pressure, thereby reducing the complexity of the reaction chamber cover design and the manufacturing and use cost. . The chemical vapor deposition reactor according to the present invention generally comprises a cylindrical reaction Φ cavity. The reaction chamber further comprises a cylindrical cap support and an annular gas diffusion disk placed at the center of the cylindrical reaction chamber chassis. The annular gas diffusion disk divides the cylindrical reaction chamber into two upper and lower portions, and the airflow introduced into the annular gas diffusion disk passes through the through hole on the annular gas diffusion disk to enter the reaction under the annular gas diffusion disk in a vertically downward direction. The cavity 'forms a stream of gas that is perpendicular to the surface of the annular substrate carrier. The air flow perpendicular to the surface of the annular substrate carrier plate can effectively suppress thermal convection above the annular substrate carrier, such that another flow entering the reaction chamber below the gas diffusion disk in a radial direction is carried on the annular substrate. The disc surface forms and maintains a laminar flow state. The mixing of the vertical 〇 direction airflow and the radial direction airflow near the surface of the substrate reduces the reaction time between the two in the emulsion phase, and improves the efficiency of the gas phase reaction and the quality of the gas phase. Since the vertical gas flow does not form a reaction chamber from the top of the reaction chamber, the design of the reaction chamber top cover can be simplified and the manufacture of the reaction chamber top cover can be reduced. The vertical downward flow also effectively suppresses the upward flow of the radial airflow, reducing the radial flow of the gas in the gas diffusion plate, and improving the repeatability, reproducibility and consistency of the chemical vapor phase (IV) process. The chemical vapor deposition reactor according to the present invention generally comprises a cylindrical reaction chamber. The reaction step includes a cylindrical top cover support placed at the center of the __ anti-ship chassis 201009106 and an annular gas diffusion disk. A plurality of gas streams can be realized in the cylindrical reaction chamber to flow from the periphery of the cylindrical reaction chamber in a radially inward direction to the center of the cylindrical reaction chamber. When the gas flow flows from the outer circumference in the radially inward direction, the circumferential cross-sectional area is continuously reduced, the gas flow rate is continuously increased, and the mass density of the reactant is also continuously increased. Among them, the increased gas flow rate of the dry cut causes the thickness of the interface layer to decrease in the radial inward direction. The amount of reactant diffused from the gas phase to the surface of the substrate increases. The increase in gas flow velocity and reactant mass density in the radially inward direction (also known as gas flow convergence effect) collectively compensates for the decrease in chemical vapor deposition rate due to reactant depletion effects. The chemical vapor deposition reactor according to the present invention can also obtain uniform chemical vapor deposition without rotating the substrate carrier or the substrate itself, thereby simplifying the design of the substrate carrier, reducing the substrate carrier and the cylinder. The manufacturing and use cost of the shaped reaction chamber 'further improves the repeatability, reproducibility and consistency of the chemical vapor deposition. The objects, advantages and other features of the present invention will become more apparent from the Detailed Description of the Drawing Description [Embodiment] The various reactor reaction chamber embodiments of the present invention and the present invention can be fully understood by the following description of the preferred embodiments, and the following preferred embodiments are also considered as examples of the scope of the invention. It will be apparent that it is to be understood that the invention as defined by the scope of the invention is broader than the preferred embodiments described below. More modified and modified embodiments can be produced by the ordinary skill without departing from the spirit and scope of the invention. Therefore, the embodiments described below are intended to be illustrative only and not to limit the scope of the invention as defined by the scope of the invention. According to one embodiment of the invention, a chemical vapor deposition reactor typically has a cylindrical reaction chamber 522 (see Figure 5). The cylindrical reaction chamber 522 has a reaction chamber top 12 201009106 cover 501, a reaction chamber chassis 513, a cylindrical reaction chamber side wall 511, a cylindrical top cover support 502, an annular substrate carrier 506, and a substrate carrier. The support circular tubes 540a and 540b, a gas introduction ring 507, an annular gas discharge passage 503b, a heating device 526 disposed under the annular substrate carrier, and a vent hole 509 placed in the vicinity of the reaction chamber chassis. The cylindrical top cover support 502 is generally placed at the center of the reaction chamber chassis 513. The cylindrical top cover support 502 and the center of the cylindrical reaction chamber 522 are generally coincident (concentrically placed). The top portion of the cylindrical top cover supporting 5〇2 is supported to the central portion of the inner side of the reaction chamber cover 501, which can effectively alleviate the deformation of the reaction chamber cover 501 under low pressure, and simplify the reaction chamber cover 5〇1. The design, reducing the manufacturing and use cost of the reaction chamber cap 501 'so that the cylindrical reaction chamber 522 can increase the number of substrates or substrate areas that can be deposited each time by increasing the diameter of the reaction chamber. The annular substrate carrier 506 is typically placed horizontally on substrate carrier support tubes 54A and 540b having a plurality of dimples thereon, one for each of the dimples. The gas introduction ring 507 is generally placed horizontally above the side φ wall of the cylindrical reaction chamber 522 and between the reaction chamber top cover 501 and the annular substrate carrier 506. The gas introduction ring 507 usually includes a plurality of annular gas nozzles, such as 5?7a, 5? and 507c, which are generally placed in the gas introduction ring 507 one by one in a vertical arrangement at a certain interval in the vertical direction. The direction of gas flow introduced into the reaction chamber 522 by the annular gas nozzle is generally parallel to the surface of the annular substrate carrier 5〇6 or at an oblique angle of less than 90 degrees to the surface of the annular substrate carrier 506. The annular gas nozzles are not in communication with each other, and the annular gas nozzles are connected to respective gas supply units. The annular gas discharge passage 503b surrounds the outer periphery of the cylindrical top cover 5〇2. The annular gas discharge passage 5〇3b may also be replaced by a gas discharge ring placed horizontally on the upper portion of the cylindrical top cover 13 201009106 support 502 (not shown in Fig. 5). The gas discharge ring is located between the reaction chamber top cover 501 and the annular substrate carrier 506 to maintain a gas flow introduced radially outward from the gas introduction ring 507 in the radially outward direction to maintain the layer before entering the gas discharge ring. Flow status. The gas discharge ring or annular gas discharge passage 503b may also be placed in the cylindrical top cover support 5〇2. A protective disk (not shown in Fig. 5) may be attached to the lower surface of the reaction chamber top cover 501 to prevent direct deposition of reactants on the lower surface of the reaction chamber top cover 501 during the chemical vapor deposition process. An application example of performing chemical vapor deposition using a chemical vapor deposition reactor reaction chamber (shown in Fig. 5) according to an embodiment of the present invention can be as follows. One gas stream containing mainly Group V reactants, such as NH3, the other containing mainly Group III reactants, such as TMGa, TMAl and TMIn, and the other containing mainly inert gases such as Ar, or carrier gas. For example, H2, N2, or a Group V reactant such as NH3, or a mixture thereof is introduced into the cylindrical reaction chamber 522 from the annular gas nozzles 5A, 507b, and 507c in the radial direction from the outside to the inside. As shown in Fig. 5, all of the gas is formed and maintained in a laminar flow state on the surface of the annular substrate carrier 506 φ before being discharged by the annular exhaust passage 503b. The depletion effect of the steroid reactant in the direction of the gas flow, particularly the deposition rate, is compensated by the gas-converging effect in the radially outward direction. Thus, uniform vapor deposition can be obtained without rotating the substrate 500. As a result, the design of the annular substrate carrier 506 can be simplified and the manufacturing and use costs thereof can be reduced. As shown in Fig. 5, since the annular gas introduction ring 507 is horizontally placed on the outer upper portion of the cylindrical reaction chamber 522, the design of the reaction chamber top cover 501 can be simplified, and the manufacturing and use cost thereof can be reduced. In addition, since the reaction chamber top cover 501 does not have any gas introduction means, the inside of the reaction chamber top cover 501 can be thoroughly cleaned after each chemical vapor deposition, thereby ensuring the repeatability of the chemical vapor deposition process. Then 14 201009106 Present and consistency. Another embodiment of a chemical vapor deposition reactor reaction chamber as shown in FIG. 5 according to the present invention is to place the gas introduction ring 5〇7 horizontally on the upper portion of the cylindrical top cover support 502 (not shown in FIG. 5). Shown in the 'and is located between the reaction chamber top cover and the annular substrate carrier 506. At the same time, the annular gas boat discharge passage can be placed at the periphery of the cylindrical reaction chamber 522 (not shown in Fig. 5). The annular gas discharge passage may also be replaced by a gas discharge ring placed horizontally above the side wall of the cylindrical reaction chamber 522 (not shown in Figure 5). The gas discharge ring or annular gas discharge passage may also be placed in the side wall 511 of the cylindrical reaction chamber 522. Under the above scheme, one gas stream mainly containing a group V reactant, such as nh3, and the other gas stream mainly containing π-type reactants such as TMGa, TMA1 and TMIn, and the other mainly contains an inert gas, such as Ar, or a carrier gas, such as h2, N2, or a Group V reactant, such as leg 3, or a mixture thereof, is introduced into the cylindrical reaction chamber 522 from the annular gas nozzle radially inwardly and outwardly (not Shown in Figure 5). All of the gas is formed on the surface of the annular substrate carrier 5〇6 and maintained in a laminar flow state before being discharged by the annular gas discharge passage. The depletion effect in the direction of the gas flow, particularly the depletion effect of the steroid reactant, requires that the substrate 500 be rotated to obtain a uniform gas phase. According to another embodiment of the invention, a chemical vapor deposition reactor typically has a cylindrical reaction chamber 622 (see Figure 6). The cylindrical reaction chamber 622 has a reaction chamber top cover 601', a reaction chamber chassis 613, a cylindrical reaction chamber side wall 611, a cylindrical top cover support 602', a gas introduction tray 604, and an annular substrate carrier 606. A substrate carrier supports the circular tubes 640a and 640b, a gas introduction ring 607, a gas discharge ring 603', a heating device 626 placed under the annular substrate carrier, and a row placed near the reaction chamber chassis. Air hole 609. The cylindrical cap support 602 is generally placed at the center 15 201009106 of the reaction chamber chassis 613. The cylindrical cap support 602 and the center of the cylindrical reaction chamber 622 are generally coincident (concentrically placed). The top portion of the cylindrical top cover supporting 6〇2 is supported to the central portion of the inner side of the reaction chamber top cover 601 to effectively reduce the deformation of the reaction chamber top cover 601 under low pressure, simplifying the design of the reaction chamber top cover 601, and reducing the The cost of fabrication and use of the reaction chamber cap 601 allows the cylindrical reaction chamber 622 to increase the number of substrates or substrate areas that can be deposited each time by increasing the diameter of the reaction chamber. The gas introduction disk 604 is placed on the lower side of the cylindrical reaction chamber 622 near the lower side of the reaction chamber top cover 601. The lower surface 612 of the gas introduction disk 604 has a plurality of through holes 619' through which the vertical holes 619 can be provided vertically downward. The gas flow hole 619 has a circularly distributed through hole 619 in the lower surface 612 of the gas introduction disk 604. The width in the radial direction is generally not less than the width of the substrate 600 which is also annularly placed on the substrate carrier 606 in the radial direction. The gas flowing vertically downward from the through hole 619 can uniformly and completely cover the surface of the entire substrate 600. The annular substrate carrier 606 is typically placed horizontally on substrate carrier support tubes 640a and 640b having a plurality of recesses therein, each of which typically has a substrate sheet 6 放置. The gas introduction ring 607 is generally placed horizontally above the side φ wall of the cylindrical reaction chamber 622 and between the gas introduction disk 604 and the annular substrate carrier 606. Each of the gas introduction rings 607 typically includes a plurality of annular gas nozzles, such as 6〇7a and 607b, which are generally placed in the gas introduction ring 607 in a superimposed arrangement at a certain interval in the vertical direction. The direction of gas flow introduced into the reaction chamber 622 by the annular gas nozzle is generally parallel to the surface of the annular substrate carrier 6〇6 or at an oblique angle of less than 90 degrees to the surface of the annular substrate carrier 606. The annular gas nozzles are not connected to each other, and each of the annular gas nozzles is connected to a respective gas supply unit. The gas discharge ring 603 is horizontally placed on the upper portion of the cylindrical top cover support 6〇2. The gas discharge ring 603 is located between the gas introduction disk 604 and the annular substrate carrier 201009106 606 to keep the turbulent flow introduced radially outward from the gas introduction ring 607 into the gas discharge ring. The laminar flow state is maintained before 603. To simplify the design, the gas discharge ring 6〇3 can also be replaced with an annular gas discharge passage around the cylindrical header support 602 (not shown in Figure 6). The gas discharge ring 603 or the annular gas discharge passage may also be placed in the cylindrical header support 602. An application example of performing chemical vapor deposition using a chemical vapor deposition reactor (shown in Fig. 6) according to another embodiment of the present invention can be as follows. A gas stream comprising primarily a Group V reactant, such as nh3, and another major group of reactants, such as TMGa, TMA1 and TMIn, are radially outwardly from the annular gas nozzles 607a and 607b, respectively. The introduction is directed into the cylindrical reaction chamber 622. The other one mainly contains an inert gas such as Ar, or a carrier gas such as Hz, n2, or a group V reactant such as leg 3' or a steroid reactant such as TMGa, ΤΜΑι and TMIn, or a mixture thereof from the gas A through hole 619 introduced into the disk 6〇4 is introduced downward into the cylindrical reaction chamber 622 in a direction perpendicular to the surface of the substrate carrier 606. As shown in Fig. 6, the 'vertical airflow is effective to suppress thermal convection so that the radial airflow maintains laminar flow conditions throughout the reaction chamber until all of the gas exits the counter-φ chamber 622 via the gas exhaust ring 603. The vertical gas flow and the radial gas flow cross each other and meet and mix near the annular substrate carrier 606, reducing the time for gas phase reaction between different reactants, and improving the efficiency of the gas phase reaction and the quality of the vapor phase deposition. The depletion effect of the steroid reactant flowing radially outward from the inward direction is compensated by the gas flow convergence effect. A uniform chemical vapor deposition can be obtained without rotating the substrate 600, thereby simplifying the substrate carrier. The design of 606 'reduces the cost of manufacturing and using the cylindrical reaction chamber 622. Another application example for chemical vapor deposition using a chemical vapor deposition reactor (shown in Figure 6) in accordance with another embodiment of the present invention can be as described under 17 201009106. A gas stream mainly containing a Group V reactant such as NH3 is introduced into the cylindrical reaction chamber 622 from the annular gas nozzle 607a in the radial direction from the outside to the inside. Another gas stream comprising mainly Group III reactants, such as TMGa, TMA1 and TMIn, is introduced downwardly from the through hole 619 of the gas introduction disk 604 into the cylindrical reaction chamber in a direction perpendicular to the surface of the substrate carrier 606. Within 622. As shown in Figure 6, the vertical gas flow is effective to suppress heat convection so that the radial gas flow maintains laminar flow conditions throughout the reaction chamber until all of the gas exits the reaction chamber 622 via the gas discharge ring 603. The vertical gas flow and the control flow gas cross each other' and meet and mix near the annular substrate carrier 606, reducing the time of gas phase reaction between different reactants by reducing φ, thereby improving the efficiency of gas phase reaction and vapor deposition. quality. The π-quinone reactant introduced from the gas introduction disk 6〇4 can uniformly cover the entire surface of the substrate carrier 606, and uniform chemical vapor deposition can be obtained even if the substrate 600 is not rotated, thereby simplifying the lining The design of the bottom carrier 606 reduces the cost of manufacturing and using the cylindrical reaction chamber 622. Another application example of performing chemical vapor deposition using a chemical vapor deposition reactor reaction chamber (shown in Fig. 6) according to another embodiment of the present invention can be as follows. A gas φ stream mainly containing a group III reactant such as TMGa, TMA1 and TMIn is introduced into the cylindrical reaction chamber 622 from the annular gas nozzle 607b in the radial direction from the outside to the inside. Another gas stream containing mainly a Group V reactant such as NH3 is introduced into the cylindrical reaction chamber 622 downwardly from the through hole 619 of the gas introduction disk 604 in a direction perpendicular to the surface of the substrate carrier 606. As shown in Figure 6, the vertical gas flow is effective to suppress thermal convection such that the radial gas flow maintains a laminar flow condition throughout the reaction chamber until all of the gas exits the reaction chamber 622 via the gas discharge ring 6〇3. The vertical and radial gas flows are completely separated before entering the cylindrical reaction chamber 622, and the cross gas flow is mixed and mixed near the substrate carrier 606, which can reduce and suppress the occurrence of gas phase reaction, improve gas phase reaction efficiency and vapor deposition. the quality of. The depletion effect of the III group reactant flowing in the radial direction from the outer 201009106 is compensated by the airflow convergence effect, so that a uniform chemical vapor deposition can be obtained without the red rotation of the base 600, thereby simplifying the The design of the bottom carrier 606 and the cost of manufacturing and using the cylindrical reaction chamber 622 are reduced. According to another embodiment of the present invention, a chemical vapor deposition reactor generally has a cylindrical reaction chamber 722 (see Fig. 7). The cylindrical reaction chamber 722 has a reaction chamber top cover 701, a reaction chamber chassis 713, a cylindrical reaction chamber side wall 711, a cylindrical top cover support 702, a gas introduction tray 704', an annular substrate carrier 706, and a The substrate carrier supports the circular tubes 740a and 740b, a gas introduction ring 707, an annular gas discharge φ out channel 7〇3a', a heating device 726 placed under the annular substrate carrier, and a chamber placed in the reaction chamber a vent 709 near the chassis. The cylindrical cap support 702 is generally placed at the center of the reaction chamber chassis 713. The cylindrical cap support 702 and the center of the cylindrical reaction chamber 722 are generally coincident (concentrically placed). The top portion of the cylindrical top cover support 702 is supported to the central portion of the inner side of the reaction chamber top cover 701 to effectively alleviate the deformation of the reaction chamber top cover 701 under low pressure, simplify the design of the reaction chamber top cover 701, and reduce the reaction chamber. The cost of manufacture and use of the top cover 701 allows the cylindrical reaction chamber 722 to increase the number of substrates or substrate area that can be deposited each time by increasing the diameter of the reaction chamber. The gas introduction disk 704 is placed on the lower side of the cylindrical reaction chamber 722 near the lower side of the reaction chamber top cover 701. The lower surface 712 of the gas introduction disk 704 has a plurality of through holes 719 through which the vertical holes 719 can be provided vertically downward. airflow. The through hole 719 having an annular distribution on the lower surface of the gas introduction disk 704 has a width in the radial direction of not less than a width of the substrate 700 which is also annularly placed on the substrate carrier 706 in the radial direction, so that The gas flowing vertically downward on the through hole 719 can uniformly and completely cover the surface of the entire substrate 700. The annular substrate carrier 706 is typically placed horizontally on substrate carrier support tubes 740a and 201009106 740b, which is a substrate sheet 700. There are a few pits on it, and each pit is placed
錢體導入環707通常水平放置在該圓柱形頂蓋支撐的 上P並位於該氣體引入盤7〇4和該環形襯底載盤7⑽之間。每 個氣體導入環術通常包含有若干環形氣體喷嘴，W和 707b ’該環形氣體喷嘴—般沿垂直方向按—定間距逐個疊加排列 放置在該氣體導入環7〇7内。由該環形氣體喷嘴導入該反應腔概 的氣流方向通常平行於該環形襯底餘而表面或與該環形概底 載盤表面成小於9G度的斜^該環形氣體喷嘴之間相互不連 通’每-個_錢时嘴與各自陳氣單城接。 該環形氣體排出通道703a放置在該圓柱形反應腔似的外 圍。該環形氣體排出通道7Q3a也可以用水平放置在該圓柱形反應 腔722側壁上部的氣體排出環代替（未在圖7中顯示）。該氣體排 出環703位於該氣體引入盤7〇4和該環形襯底載盤7〇6之間以 保持由該氣體導人環707沿徑向由内向外方嚮導人的氣流在進入 該氣體排出環之前保持層流狀態^氣體排出環或環形氣體排出 通道703a也可以放置在該圓柱形反應腔722的側壁711内。 使用根據本發明另一種實施方案的一種化學氣相澱積反應器 反應腔（如圖7所示）進行化學氣相澱積的一種應用實例可如下 所述。股主要包含V族反應劑，如NH3，的氣流和另一股主要包 含III族反應劑，如TMGa，TMA1和TMIn，的氣流分別從該環形氣 體喷嘴707a和707b沿徑向由内向外方嚮導入到該圓柱形反應腔 722中。另一股主要包含惰性氣體，如Ar，或載氣，如扭，N2，或 V族反應劑’如NIL·，或III族反應劑，如TMGa，TMA1和TMIn， 或它們的混合物從該氣體引入盤704上的通孔719沿垂直於該襯 20 201009106 底載盤706表面方向向下引入到該圓柱形反應腔722内。如圖7 所示，垂直氣流能夠有效抑制熱對流，使得徑向氣流在整個反應 腔内保持層流狀況，直到所有氣體經該環形氣體排出通道703a排 出該反應腔722。垂直氣流和徑向氣流相互交叉，並在該環形襯底 載盤706附近相遇混合，減少了不同反應劑之間發生氣相反應的 時間’可以提高氣相反應的效率和氣相殿積的質量。由於該IΠ 族反應劑沿徑向由内向外方向流動時存在耗盡效應和發散效應， 所以需要通過旋轉襯底700才能獲得均勻的化學氣相澱積。 φ 使用根據本發明另一種實施方案的一種化學氣相澱積反應器 反應腔（如圖7所示）進行化學氣相殿積的另一種應用實例可如 下所述。一股主要包含V族反應劑，如NH3，的氣流從該環形氣體 喷嘴707a沿徑向由内向外方嚮導入到該圓柱形反應腔722中。另 一股主要包含III族反應劑，如TMGa，TMA1和TMIn，的氣流從該 氣體引入盤704上的通孔719沿垂直於該襯底載盤706表面方向 向下引入到該圓柱形反應腔722内。如圖7所示，垂直氣流能夠 有效抑制熱對流，使得徑向氣流在整個反應腔内保持層流狀況， φ 直到所有氣體經該環形氣體排出通道703a排出該反應腔722。垂 直氣流和徑向氣流相互交叉，並在該環形襯底載盤7〇6附近相遇 混合’減少了不同反應劑之間發生氣相反應的時間，可以提高氣 相反應的效率和氣相澱積的質量。由該氣鱧引入盤7〇4導入的in 族反應劑能均勻覆蓋到整個該襯底載盤706的表面，即使該襯底 700不旋轉也能獲得均勻的化學氣相澱積，從而簡化該襯底載盤 706的設計，降低該圓柱形反應腔722的製造和使用成本。 使用根據本發明另一種實施方案的一種化學氣相澱積反應器 反應腔（如圖7所示）進行化學氣相澱積的另一種應用實例可如 21 201009106 下所述。知主要包含ΠI族反應劑，如TMGa，TMA1和TMIn，的 氣流從該環形氣體喷嘴7〇7b沿徑向由内向外方嚮導入到該圓柱形 反應腔722中。另一股主要包含v族反應劑，如nh3，的氣流從該 氣體引入盤704上的通孔719沿垂直於該襯底載盤γ〇6表面方向 向下引入到該圓柱形反應腔722内。如圖7所示，垂直氣流能夠 有效抑制熱對流’使得徑向氣流在整個反應腔内保持層流狀況， 直到所有氣趙經該環形氣體排出通道703a排出該反應腔722。該 垂直和徑向氣流在進入該圓柱形反應腔722之前完全分離，交又 Ο 氣流在該襯底載盤706附近相遇混合，可以降低並抑制氣相反應 的發生’提高氣相反應效率和氣相澱積的質量。由於該ΠΙ族反 應劑沿徑向由内向外方向流動時存在耗盡效應和發散效應，所以 需要通過旋轉襯底700才能獲得均勻的化學氣相殿積。 根據本發明另一種實施方案，一種化學氣相澱積反應器通常 有一圓柱形反應腔822 (見圖8)。該圓柱形反應腔822有一反應 腔頂蓋801 ’ 一反應腔底盤813，一筒狀反應腔側壁811，一圓柱 形頂蓋支撐802，一氣體引入盤804，一環形襯底載盤806，一襯 φ 底載盤支撐圓管84〇a和840b，一環形氣體排出通道803a和803b， 一放置在該環形襯底載盤下方的加熱裝置826,和一放置在該反應 腔底盤附近的排氣孔809a和809b。 該圓柱形頂蓋支撐802 —般放置在該反應腔底盤813的中心 部位，該圓柱形頂蓋支撐802和該圓柱形反應腔822的圓心通常 重合在一起（同心圓放置方式）。該圓柱形頂蓋支撐802的頂部支 撐到該反應腔頂蓋801内側的中央部位可有效減輕該反應腔頂蓋 801在低壓下的變形，簡化該反應腔頂蓋8〇1的設計，降低該反應 腔頂蓋801的製造與使用成本，使得該圓柱形反應腔822可以通 22 201009106 過增加反應腔直徑來增加每次可以澱積的襯底數量或襯底面積。 該氣體引入盤804放置在該圓柱形反應腔822頂部靠近反應 腔頂蓋801的下側，該氣體引入盤804的下表面812有若干組互 不相通的通孔819,通過該若干組通孔819可以向該圓柱形反應腔 822提供若干股垂直向下的氣流。每一組該通孔gig與獨立的供氣 單元連接。該氣體引入盤804下表面呈環形分佈的通孔819其徑 向方向上的寬度一般不小於該襯底載盤806上同樣呈環形放置的 概底800在徑向方向上的寬度’使得由該通孔gig上垂直下流的 φ 氣體能均勻完整地覆蓋全部襯底800的表面。 該環形襯底載盤806通常水平放置在襯底載盤支撐圓管84〇a 和840b上，該環形襯底載盤806上有若干凹坑，每種凹坑一般放 置一個襯底片800。 該環形氣體排出外通道803a圍繞該圓柱形反應腔822的外 圍’而該環形氣體排出内通道803b則圍繞該圓柱形頂蓋支樓8〇2 的外圍。該環形氣體排出外通道803a和内通道803b也可以用水 平放置在該圓柱形反應腔822側壁上部和該圓柱形頂蓋支撐8〇2 φ 上部的氣體排出外環和内環代替（未在圖8中顯示）。該氣體排出 外環和内環位於該氣體引入盤804和讓環形襯底載盤8〇6之間。 使用根據本發明另一種實施方案的一種化學氣相澱積反應器 反應腔（如圖8所示）進行化學氣相澱積的一種應用實例可如下 該。一股主要包含V族反應劑，如NH3 ’的氣流和另一股主要包含 IΗ族反應劑，如TMGa ’ TMA1和TMIn，的氣流分別由各自獨立的 一組通孔819沿垂直於該襯底載盤806表面方向向下引入到該圓 柱形反應腔822内。該氣流均勻覆蓋整個該襯底載盤8〇6，所以無 須旋轉該襯底800也能得到均勻的化學氣相澱積，從而簡化該襯 23 201009106 底載盤806的設計，降低該圓柱形反應腔822的製造和使用成本。 垂直向下的氣流本身能有效抑制熱對流，從而確保該襯底載盤806 表面上的氣流始終處於層流狀態。 根據本發明另一種實施方案，一種化學氣相澱積反應器通常 有一圓柱形反應腔922 (見圖9)。該圓柱形反應腔922有一反應 腔頂蓋901，一反應腔底盤913 ’ 一筒狀反應腔侧壁911，一圓柱 形頂蓋支撐902，一環形氣體擴散盤904，一氣體引入環905，一 環形襯底載盤906，一種襯底載盤支撐圓管940a和940b，一氣體 φ 導入環907，一環形氣體排出通道903b，一放置在該環形襯底載 盤下方的加熱裝置926’和一種放置在該反應腔底盤附近的排氣孔 909。 該圓柱形頂蓋支撐902 —般放置在該反應腔底盤913的中心 部位，該圓柱形頂蓋支撐902和該圓柱形反應腔922的圓心通常 重合在一起（同心圓放置方式> 該圓柱形頂蓋支撐9〇2的頂部支 撑到該反應腔頂蓋901内側的中央部位可有效減輕該反應腔頂蓋 901在低壓下的變形，簡化該反應腔頂蓋9〇1的設計，降低該反應 Φ 腔頂蓋901的製造與使用成本，使得該圓柱形反應腔922可以通 過增加反應腔直徑來增加每次可以澱積的襯底數量或襯底面積。 該環形氣體擴散盤904下表面912有若干通孔919,該環形氣 體擴散盤904通常水平放置在該圓柱形反應腔922上部靠近該反 應腔頂蓋901的下方，並與該反應腔頂蓋g〇丨的下表面形成該圓 柱形反應腔922之上腔920。該環形氣體擴散盤9〇4的上表面與該 反應腔頂蓋901的下表面之間的距離通常比該環形氣體擴散盤 904的下表面與該襯底載盤906的上表面之間的距離短，以便於該 上腔920内的徑向氣流能處於層流狀態。該氣體擴散盤9〇4下表 24 201009106 面呈環形分佈的通孔919其徑向方向上的寬度一般不小於該襯底 載盤906上同樣呈環形放置的襯底900在徑向方向上的寬度，使 得由該通孔919上垂直下流的氣體能均勻完整地覆蓋全部襯底 900的表面。 該氣體引入環905通常水平放置在該圓柱形反應腔922的側 壁上部，並位於該反應腔頂蓋901下表面和該氣體擴散盤904上 表面之間’使得由該氣體引入環905導入的氣體能進入該上腔 920。 φ 該環形襯底載盤906通常水平放置在襯底載盤支撐圓管940a和 940b上，該環形襯底載盤906上有若干凹坑，每種凹坑一般放置 一個襯底片900。 該氣體導入環907通常水平放置在該圓柱形反應腔922的侧 壁中部，並位於該環形氣體擴散盤9〇4和該環形襯底載盤9〇6之 間。每個該氣體導入環907通常包含有若干環形氣體喷嘴，如9〇7a 和907b，該環形氣體喷嘴一般沿垂直方向按一定間距逐個疊加排 列放置在該氣體導入環907内。由該環形氣體喷嘴導入該反應腔 φ 922的氣流方向通常平行於該環形襯底載盤906表面或與該環形 襯底載盤906表面成小於9〇度的斜角。該環形氣體喷嘴之間相互 不連通，每一個該環形氣體喷嘴與各自的供氣單元連接。 該環形氣體排出通道903b圍繞該圓柱形頂篕支撐9〇2的外 側。該環形氣體排出通道903b也可以用水平放置在該圓柱形頂蓋 支樓902中部的氣體排出環代替（未在圖9中顯示）。該氣體排出 環位於該環形氣體擴散盤9〇4和該環形襯底載盤9〇6之間，以保 持由該氣體導入環9〇7沿徑向由外向内方嚮導入的氣流在進入該 氣體排出環之前保持層流狀態。魏體排丨環或環形氣體排出通 25 201009106 道903b也可以放置在該圓柱形頂蓋支撐902内。 使用根據本發明另一種實施方案的一種化學氣相澱積反應器 反應腔（如圖9所示）進行化學氣相澱積的一種應用實例可如下 該。一股主要包含V族反應劑，如NH3，的氣流和另一股主要包含 III族反應劑，如TMGa，TMA1和TMIn，的氣流分別從該環形氣體 喷嘴907a和907b沿徑向由外向内方嚮導入到該圓柱形反應腔922 中。另一股主要包含惰性氣體，如Ar，或載氣，如Η2 ’ N2，或V 族反應劑，如NH3，或III族反應劑，如TMGa，TMA1和TMIn，或 參 它們的混合物由該氣體引入環905沿徑向由外向内方向引入到該 上腔920内，該上腔920内的氣體再經由該氣體擴散盤904上的 通孔919以垂直於該襯底載盤906表面的方向進入到該圓柱形反 應腔922内，所形成的垂直氣流覆蓋整個該襯底載盤906的表面。 由該環形氣體喷嘴907a和907b徑向進入該圓柱形反應腔922 的氣體可能會由於不同的氣體密度，不同的氣體流速，和不同的 氣體溫度在該圓柱形反應腔922上方外側或該環形氣體擴散盤 904下方外側形成環形渦流《^經該通孔919垂直向下的氣流可有效 φ 防阻該環形渦流的形成。如圖9所示’在垂直氣流作用下，沿徑 向由外向内的氣流可以保持其層流狀態，直到經該環形氣體排出 通道903b排出該反應腔922。垂直氣流和徑向氣流相互交叉，並 在該環形襯底載盤906附近相遇混合，減少了不同反應劑之間發 生氣相反應的時間’可以提高氣相反應的效率和氣相澱積的質 量。該III族反應劑沿徑向由外向内方向流動所發生的耗盡效應 被氣流會聚效應所補償，所以無需旋轉襯底900也能獲得均勻的 化學氣相澱積，可簡化該襯底載盤906的設計和降低該圓柱形反 應腔922的製造和使用成本。由圖9所示，由於該氣體導入環907 26 201009106 和氣體引入環905均水平放置在該圓柱形反應腔922的侧壁，從 而可簡化該反應腔頂蓋901的設計，並降低其製造和使用成本。 此外’由於該反應腔頂蓋901無任何氣體導入裝置，每次化學氣 相殿積後都可以對該反應腔頂蓋901内侧進行徹底的清理，從而 確保化學氣相澱積過程的重複性，再現性和一致性。 使用根據本發明另一種實施方案的一種化學氣相澱積反應器 反應腔（如圖9所示）進行化學氣相澱積的一種應用實例可如下 該。一股主要包含V族反應劑，如NIL·，的氣流從該環形氣體噴嘴 φ 907a沿徑向由外向内方嚮導入到該圓柱形反應腔922中。另一股 主要包含III族反應劑，如TMGa，TMA1和TMIn，的氣流由該環形 氣體引入環905沿徑向由外向内方向引入到該上腔920内，該上 腔920内的氣體再經由該氣體擴散盤904上的通孔919以垂直於 該襯底載盤906表面的方向進入到該圓柱形反應腔922内，所形 成的垂直耽流覆蓋整個該概底載盤906的表面。如圖9所示，垂 直氣流能夠有效抑制熱對流，使得徑向氣流在整個反應腔内保持 層流狀況，直到所有氣體經該環形氣體排出通道903b排出該反應 φ 腔922。垂直氣流和徑向氣流相互交叉，並在該環形襯底載盤906 附近相遇混合，減少了不同反應劑之間發生氣相反應的時間，可 以提高氣相反應的效率和氣相澱積的質量。由該氣體擴散盤904 導入的III族反應劑能均勻地覆蓋到整個該襯底載盤906的表 面’即使該襯底900不旋轉也能在該襯底900獲得均勻的化學氣 相澱積，從而簡化該襯底載盤906的設計，降低該圓柱形反應腔 922的製造和使用成本。 使用根據本發明另一種實施方案的一種化學氣相澱積反應器 反應腔（如圖9所示）進行化學氣相澱積的一種應用實例可如下 27 201009106 所述。一股主要包含III族反應劑，如TMGa，TMA1和TMIn ’的氣 流從該環形氣體喷嘴907b沿徑向由外向内方嚮導入到該圓枉形反 應腔922中。另一股主要包含v族反應劑，如NH3，的氣流由該環 形氣體引入環905沿徑向由外向内方向引入到該上腔920内’該 上腔920内的氣體再經由該氣體擴散盤904上的通孔919以垂直 於該襯底載盤906表面的方向進入到該圓柱形反應腔922内’所 形成的垂直氣流覆蓋整個該襯底載盤906的表面。該III族反應 劑沿徑向由外向内方向流動所發生的耗盡效應被氣流會聚效應所 φ 補償，所以無需旋轉襯底900也能獲得均勻的化學氣相澱積，可 簡化該襯底載盤906的設計和降低該圓柱形反應腔922的製造和 使用成本。如圖9所示，垂直氣流能夠有效抑制熱對流，使得徑 向氣流在整個反應腔内保持層流狀況，直到所有氣體經該環形氣 體排出通道903b排出該反應腔922。該垂直和徑向氣流在進入該 圓柱形反應腔922之前完全分離，交叉氣流在該襯底載盤906附 近相遇混合’可以降低並抑制氣相反應的發生，提高氣相反應效 率和氣相澱積的質量。 Φ 根據本發明一種如圖9所示的化學氣相澱積反應器反應腔的 另一種實施方案是將該環形氣體引入環水平放置在該圓柱形頂蓋 支撐902的上部（未在圖9中顯示），並位於該反應腔頂蓋9〇1的 下表面和該氣體擴散盤904的上表面之間。由該環形氣體引入環 沿著徑向由内向外方向引入到該上腔92〇内的氣體再經由該氣體 擴散盤904上的通孔919也同樣能形成一股垂直向下的氣流進入 到該圓柱形反應腔922内。 根據本發明另一種實施方案，一種化學氣相澱積反應器通常 有一圓柱形反應腔1〇22 (見圖10)。該圓柱形反應腔1〇22有一反 28 201009106 應腔頂蓋1001，一反應腔底盤l〇13，一筒狀反應腔側壁1〇11，— 圓柱形頂蓋支撐1002，一環形氣體擴散盤1004，一氣體引入環 1005，一環形襯底載盤1〇〇6，一襯底載盤支撐圓管i〇4〇a和 1040b，一氣體導入環1〇〇7，一環形氣體排出通道1〇〇3a，一放置 在該環形襯底載盤下方的加熱裝置1026，和一放置在該反應腔底 盤附近的排氣孔1009。 該圓柱形頂蓋支撐1002 —般放置在該反應腔底盤1〇13的中 心部位，該圓枉形頂蓋支撐1〇〇2和該圓柱形反應腔1〇22的圓心 Φ 通常重合在一起（同心圓放置方式）。該圓柱形頂蓋支撐1〇〇2的 頂部支撐到該反應腔頂蓋1001内側的中央部位可有效減輕該反應 腔頂蓋1001在低壓下的變形，簡化該反應腔頂蓋1〇〇1的設計， 降低該反應腔頂蓋1001的製造與使用成本，使得該圓柱形反應腔 1022可以通過增加反應腔直徑來增加每次可以殿積的槻底數量或 概底面積。 該環形氣體擴散盤1004下表面1012有若干通孔1〇19，該環 形氣體擴散盤1004通常水平放置在該圓柱形反應腔1〇22上方靠 近該反應腔頂蓋1001的下方，並與該反應腔頂蓋1〇〇1的下表面 形成該圓柱形反應腔1022之上腔1020。該環形氣體擴散盤1004 的上表面與該反應腔頂蓋l〇〇i的下表面之間的距離通常比該環形 氣體擴散盤1004的下表面與該襯底載盤1〇〇6的上表面之間的距 離短，以便於該上腔1020内的徑向氣流能處於層流狀態。該氣體 擴散盤1004下表面呈環形分佈的通孔ι〇19其徑向方向上的寬度 一般不小於該襯底載盤1006上同樣呈環形放置的襯底1000在徑 向方向上的寬度’使得由該通孔1〇19上垂直下流的氣體能均勻完 整地覆蓋全部襯底1000的表面。 29 201009106 該氣體引入％ 1005通常水平放置在該圓柱形反應腔ι〇22侧 壁上部，並位於該反應腔頂蓋1〇〇1下表面和該氣體擴散盤 上表面之間，使由該乱體引入環1005導入的氣體能進入該上腔 1020。 該環形襯底載盤1006通常水平放置在襯底載盤支撐圓管 1040a和1040b上，該環形襯底載盤1〇〇6上有若干凹坑，每種凹 坑一般放置一個襯底片1〇〇〇。 該氣體導入環1007通常水平放置在該圓柱形頂蓋支撐1〇〇2 〇 的中部，並位於該環形氣體擴散盤1004和該環形襯底載盤1〇〇6 之間。每個該氣體導入環1〇〇7通常包含有若干環形氣體喷嘴 1007a，該些環形氣體喷嘴一般沿垂直方向按一定間距逐個疊加排 列放置在該氣體導入環1007内。由該環形氣體喷嘴導入該反應腔 1022的氣流方向通常平行於該環形襯底載盤1〇〇6表面或與該環 形襯底載盤1006表面成小於9〇度的斜角。該環形氣體喷嘴之間 相互不連通’每一個該環形氣體喷嘴與各自的供氣單元連接。 該環形氣體排出通道l〇〇3a放置在該圓柱形反應腔1〇22的外 φ 圍。該環形氣體排出通道l〇〇3a也可以用水平放置在該圓柱形反 應腔1022侧壁上部的氣體排出環1〇03代替（未在圖1〇中顯示）。 該氣體排出環1003位於該環形氣體擴散盤1〇〇4和該環形襯底載 盤1006之間，以保持由該氣體導入環10〇7沿徑向由内向外方嚮 導入的氣流在進入該氣體排出環1〇〇3之前保持層流狀態。該氣體 排出環1003或環形氣體排出通道i〇〇3a也可以放置在該圓柱形反 應腔1022的侧壁1〇11内。 使用根據本發明另一種實施方案的一種化學氣相澱積反應器 反應腔（如圖10所示）進行化學氣相澱積的一種應用實例可如下 201009106 所述。一股主要包含V族反應劑，如nh3，的氣流從該環形氣體喷 嘴1007a沿徑向由内向外方嚮導入到該圓柱形反應腔1022中。另 一股主要包含ΠΙ族反應劑，如TMGa，TMA1和TMIn，的氣流由該 環形氣體引入環1005沿徑向由外向内方向引入到該上腔1020 内，該上腔1020内的氣體再經由該氣體擴散盤1004上的通孔1019 以垂直於該襯底載盤1006表面的方向進入到該圓柱形反應腔 1022内，所形成的垂直氣流覆蓋整個該襯底載盤1006的表面》 如圖10所示，在垂直氣流作用下，沿徑向由内向外的氣流可 φ 以保持其層流狀態，直到經該環形氣體排出通道1003a排出該反 應腔1022。垂直氣流和徑向氣流相互交叉，並在該環形襯底載盤 1006附近相遇混合，減少了不同反應劑之間發生氣相反應的時 間，可以提高氣相反應的效率和氣相澱積的質量》由該氣體擴散 盤1004導入的ΠΙ族反應劑能均勻覆蓋到整個該襯底載盤1〇〇6 的表面’即使該襯底1000不旋轉也能在該襯底1〇〇〇獲得均勻的 化學氣相澱積，從而簡化該襯底載盤1006的設計，降低該圓柱形 反應腔1022的製造和使用成本。由圖1〇所示，由於該氣趙導入 φ 環1007和氣體引入環1005均水平放置在該圓柱形反應腔1〇22側 壁和該圓柱形頂蓋支撐1002’從而可簡化該反應腔頂蓋1〇〇1的設 計’並降低其製造和使用成本。此外，由於該反應腔頂蓋1001無 任何氣體導入裝置，每次化學氣相澱積後都可以對該反應腔頂蓋 1001内側進行徹底的清理，從而可以確保化學氣相澱積過程的重 複性，再現性和一致性。 根據本發明一種如圖10所示的化學氣相澱積反應器反應腔的 另一種實施方案是將該環形氣體引入環水平放置在該圓柱形頂蓋 支撐1002的上部（未在圖1〇中顯示），並位於該反應腔頂蓋1〇〇1 31 201009106 的下表面和該氣體擴散盤1004的上表面之間。由該環形氣體引入 環沿著徑向由内向外引入到該上腔1020内的氣體再經由該氣體擴 散盤1004上的通孔1019也同樣可以形成一股垂直向下的氣流進 入到該圓柱形反應腔1022内。 根據本發明所述實施方案的一種化學氣相澱積反應器反應腔 内的圓柱形頂蓋支撐可以減少反應腔頂蓋變形，從而簡化設計大 型反應腔的複雜性和製造難度，降低製造和使用成本；反應腔内 的氣體擴散盤能在不增加反應腔頂蓋複雜性和製造成本的同時， 〇 提供一股垂直氣流來維持徑向氣流始終處於層流狀態；多股氣流 交又引入反應腔’並使不同反應劑在襯底表面附近相遇混合，可 以減少不同反應劑之間發生氣相反應的時間，從而提升化學氣相 反應效率，降低各種反應劑的耗用和提高化學氣相澱積質量，垂 直方向的均勻氣流或徑向由外向内氣流所產生的會聚效應可以消 除或自動補償反應劑耗盡效應對氣相澱積均勻性的影響，從而可 以簡化襯底載盤的設計’降低襯底載盤的製造和使用成本。 【圖式簡單說明】 Φ 圖1:習知行星式化學氣相澱積反應器反應腔側面結構示意圖。 圖2:習知渦盤式化學氣相澱積反應器反應腔側面結構示意圖。 圖3:習知喷淋頭式化學氣相澱積反應器反應腔側面結構示意圖。 圖4:矩形化學氣相殿積反應器反應腔側面結構示意圖。 圖5 : —種化學氣相澱積反應器反應腔側面結構示意圖，其中氣體 導入環507水平放置在該圓柱形反應腔522的侧壁上部。 圖6 : —種化學氣相澱積反應器反應腔側面結構示意圖，其中氣體 導入環607水平放置在該圓柱形反應腔622的側壁上部，氣 體引入盤604放置在該圓柱形反應腔622的頂部。 32 201009106 圖7:—種化學氣相澱積反應器反應腔侧面結構示意圖，其中氣體 導入環707水平放置在圓柱形頂蓋支撐7〇2的上部，氣體引 入盤704放置在該圓柱形反應腔722的頂部。 圖8:—種化學氣相澱積反應器反應腔側面結構示意圖，其中氣體 引入盤804放置在該圓柱形反應腔822的頂部。 圖9:一槿化學氣相澱積反應器反應腔侧面結構示意圖，其中氣體 導入環907水平放置在該圓柱形反應腔922的側壁中部，氣 體擴散盤904水平放置在該圓柱形反應腔922靠近該反應腔 頂蓋901的下方。 圖10 : —種化學氣相澱積反應器反應腔側面結構示意圖，其中氣 體導入環1007水平放置在該圓柱形頂蓋支撐1002的中部， 氣體擴散盤1004水平放置在該圓柱形反應腔1022靠近該反 應腔頂蓋1001的下方。 【主要元件符號說明】 101.反應腔頂蓋 103.尾氣收集環 104.石英盤 106.可旋轉石墨盤 107.中央氣體導入喷嘴 120.間隙 122.反應腔 126.加熱裝置 127·衛星舟 200.襯底 201.反應腔頂蓋 203.尾氣排放口 204.進氣法蘭 206.襯底載盤 222.反應腔 226.加熱裝置 303.尾氣排放口 304.喷淋頭 306.襯底載盤 322·反應腔 33 201009106The money body introduction ring 707 is normally placed horizontally on the upper side of the cylindrical top cover support P and between the gas introduction disk 7〇4 and the annular substrate carrier 7 (10). Each of the gas introduction loops usually includes a plurality of annular gas nozzles, and the annular gas nozzles are placed in the gas introduction ring 7〇7 in a superimposed manner at a predetermined interval in the vertical direction. The direction of the gas flow introduced into the reaction chamber by the annular gas nozzle is generally parallel to the surface of the annular substrate or is less than 9G degrees from the surface of the annular substrate. The annular gas nozzle is not connected to each other. - A _ money when the mouth and their respective singular single city. The annular gas discharge passage 703a is placed outside the cylindrical reaction chamber. The annular gas discharge passage 7Q3a may also be replaced by a gas discharge ring placed horizontally above the side wall of the cylindrical reaction chamber 722 (not shown in Fig. 7). The gas discharge ring 703 is located between the gas introduction disk 7〇4 and the annular substrate carrier 7〇6 to keep the airflow guided by the gas guiding ring 707 from the inside to the outside in the radial direction into the gas discharge. The laminar flow state/gas discharge ring or annular gas discharge passage 703a may also be placed in the side wall 711 of the cylindrical reaction chamber 722 before the ring. An application example of performing chemical vapor deposition using a chemical vapor deposition reactor (shown in Fig. 7) according to another embodiment of the present invention can be as follows. The gas stream mainly containing a group V reactant such as NH3, and another gas stream mainly containing a group III reactant such as TMGa, TMA1 and TMIn, radially inward and outward directions from the annular gas nozzles 707a and 707b, respectively. It is introduced into the cylindrical reaction chamber 722. The other one mainly contains an inert gas such as Ar, or a carrier gas such as a twisted, N2, or V group reactant such as NIL·, or a Group III reactant such as TMGa, TMA1 and TMIn, or a mixture thereof from the gas A through hole 719 in the introduction disk 704 is introduced into the cylindrical reaction chamber 722 downward in a direction perpendicular to the surface of the liner 20 201009106 bottom carrier 706. As shown in Figure 7, the vertical gas flow is effective to suppress thermal convection such that the radial gas flow maintains a laminar flow condition throughout the reaction chamber until all of the gas exits the reaction chamber 722 through the annular gas discharge passage 703a. The vertical gas flow and the radial gas flow cross each other and meet and mix near the annular substrate carrier 706, reducing the time for gas phase reaction between different reactants' to improve the efficiency of the gas phase reaction and the mass of the gas phase. Since the I 族 family reactant has a depletion effect and a diverging effect when flowing radially from the inside to the outside, it is necessary to obtain a uniform chemical vapor deposition by rotating the substrate 700. Another application example of the chemical vapor deposition using a chemical vapor deposition reactor (shown in Fig. 7) according to another embodiment of the present invention can be as follows. A gas stream mainly containing a Group V reactant such as NH3 is introduced into the cylindrical reaction chamber 722 from the annular gas nozzle 707a in the radial direction from the inside to the outside. Another gas stream comprising mainly Group III reactants, such as TMGa, TMA1 and TMIn, is introduced downwardly from the through-hole 719 of the gas introduction disk 704 into the cylindrical reaction chamber in a direction perpendicular to the surface of the substrate carrier 706. Within 722. As shown in Fig. 7, the vertical gas flow is effective to suppress heat convection such that the radial gas flow maintains a laminar flow condition throughout the reaction chamber, φ until all of the gas exits the reaction chamber 722 through the annular gas discharge passage 703a. The vertical gas flow and the radial gas flow cross each other and meet and mix near the annular substrate carrier 7〇6 to reduce the time of gas phase reaction between different reactants, which can improve the efficiency of gas phase reaction and vapor deposition. quality. The in-group reactant introduced from the gas introduction disk 7〇4 can uniformly cover the entire surface of the substrate carrier 706, and uniform chemical vapor deposition can be obtained even if the substrate 700 is not rotated, thereby simplifying the The design of the substrate carrier 706 reduces the cost of manufacturing and using the cylindrical reaction chamber 722. Another application example for chemical vapor deposition using a chemical vapor deposition reactor (shown in Figure 7) in accordance with another embodiment of the present invention can be as described under 21 201009106. From this annular gas nozzle 7? Another gas stream comprising predominantly a v-group reactant, such as nh3, is introduced into the cylindrical reaction chamber 722 downwardly from the through-hole 719 of the gas introduction disk 704 in a direction perpendicular to the surface of the substrate carrier γ〇6. . As shown in Fig. 7, the vertical gas flow is effective to suppress the heat convection so that the radial gas flow maintains a laminar flow condition throughout the reaction chamber until all of the gas is discharged from the reaction chamber 722 through the annular gas discharge passage 703a. The vertical and radial gas flows are completely separated before entering the cylindrical reaction chamber 722, and the cross-flow and the gas flow are mixed and mixed near the substrate carrier 706, which can reduce and suppress the occurrence of the gas phase reaction. The quality of the deposit. Since the steroidal reactant has a depletion effect and a diverging effect when flowing radially from the inside to the outside, it is necessary to rotate the substrate 700 to obtain a uniform chemical vapor deposition. According to another embodiment of the invention, a chemical vapor deposition reactor typically has a cylindrical reaction chamber 822 (see Figure 8). The cylindrical reaction chamber 822 has a reaction chamber top cover 801', a reaction chamber chassis 813, a cylindrical reaction chamber side wall 811, a cylindrical top cover support 802, a gas introduction tray 804, an annular substrate carrier 806, and a The lining φ bottom carrier supports the circular tubes 84〇a and 840b, an annular gas discharge passage 803a and 803b, a heating device 826 placed under the annular substrate carrier, and an exhaust gas placed near the reaction chamber chassis. Holes 809a and 809b. The cylindrical cap support 802 is generally placed in the center of the reaction chamber chassis 813, and the cylindrical cap support 802 and the center of the cylindrical reaction chamber 822 are generally coincident (concentrically placed). The central portion of the cylindrical top cover support 802 supported to the inner side of the reaction chamber top cover 801 can effectively alleviate the deformation of the reaction chamber top cover 801 under low pressure, simplify the design of the reaction chamber top cover 8〇1, and reduce the design. The cost of fabrication and use of the reaction chamber cap 801 allows the cylindrical reaction chamber 822 to increase the number of substrates or substrate area that can be deposited each time by increasing the diameter of the reaction chamber through 22 201009106. The gas introduction disk 804 is placed on the top of the cylindrical reaction chamber 822 near the lower side of the reaction chamber top cover 801. The lower surface 812 of the gas introduction disk 804 has a plurality of sets of mutually incompatible through holes 819 through which the plurality of groups of through holes are passed. 819 can provide a plurality of vertically downward flowes to the cylindrical reaction chamber 822. Each set of the through holes gig is connected to a separate gas supply unit. The through-hole 819 of the gas introduction disk 804 having an annular distribution on the lower surface thereof is generally not smaller than the width of the substrate 800 which is also annularly placed on the substrate carrier 806 in the radial direction. The vertically flowing φ gas on the via gig can uniformly and completely cover the surface of the entire substrate 800. The annular substrate carrier 806 is typically placed horizontally on substrate carrier support tubes 84A and 840b having a plurality of dimples thereon, one for each of the dimples. The annular gas discharge outer passage 803a surrounds the outer periphery of the cylindrical reaction chamber 822 and the annular gas discharge inner passage 803b surrounds the outer periphery of the cylindrical top cover branch 8〇2. The annular gas discharge outer passage 803a and the inner passage 803b may also be replaced by a gas discharge outer ring and an inner ring which are horizontally placed on the upper side of the cylindrical reaction chamber 822 and the cylindrical top cover support 8〇2 φ upper portion (not shown) Displayed in 8). The gas discharge outer and inner rings are located between the gas introduction disk 804 and the annular substrate carrier 8A. An application example of performing chemical vapor deposition using a chemical vapor deposition reactor (shown in Fig. 8) according to another embodiment of the present invention may be as follows. A gas stream comprising primarily a Group V reactant, such as NH3', and another stream comprising primarily Group I reactants, such as TMGa 'TMA1 and TMIn, are respectively perpendicular to the substrate by a separate set of vias 819 The surface of the carrier 806 is introduced downward into the cylindrical reaction chamber 822. The gas stream uniformly covers the entire substrate carrier 8〇6, so uniform chemical vapor deposition can be obtained without rotating the substrate 800, thereby simplifying the design of the liner 23 201009106 bottom carrier 806 and reducing the cylindrical reaction. The cost of manufacture and use of cavity 822. The vertically downward airflow itself effectively suppresses thermal convection, thereby ensuring that the airflow over the surface of the substrate carrier 806 is always laminar. According to another embodiment of the invention, a chemical vapor deposition reactor typically has a cylindrical reaction chamber 922 (see Figure 9). The cylindrical reaction chamber 922 has a reaction chamber top cover 901, a reaction chamber chassis 913', a cylindrical reaction chamber side wall 911, a cylindrical top cover support 902, an annular gas diffusion disk 904, a gas introduction ring 905, and a ring. a substrate carrier 906, a substrate carrier supporting circular tubes 940a and 940b, a gas φ introduction ring 907, an annular gas discharge passage 903b, a heating device 926' placed under the annular substrate carrier, and a type A venting opening 909 is placed in the vicinity of the reaction chamber chassis. The cylindrical top cover support 902 is generally placed at a central portion of the reaction chamber chassis 913, and the cylindrical top cover support 902 and the center of the cylindrical reaction chamber 922 are generally coincident (concentric arrangement) > The top portion of the top cover supporting 9〇2 is supported to the central portion of the inner side of the reaction chamber top cover 901, which can effectively alleviate the deformation of the reaction chamber top cover 901 under low pressure, simplify the design of the reaction chamber top cover 9〇1, and reduce the reaction. The manufacturing and use cost of the Φ cavity cap 901 allows the cylindrical reaction chamber 922 to increase the number of substrates or substrate area that can be deposited each time by increasing the diameter of the reaction chamber. The lower surface 912 of the annular gas diffusion disk 904 has a plurality of through holes 919, the annular gas diffusion disk 904 is generally horizontally placed on the upper portion of the cylindrical reaction chamber 922 near the reaction chamber top cover 901, and forms a cylindrical reaction with the lower surface of the reaction chamber top cover g The cavity 922 is above the cavity 920. The distance between the upper surface of the annular gas diffusion disk 9〇4 and the lower surface of the reaction chamber top cover 901 is generally greater than the lower surface of the annular gas diffusion disk 904 and the substrate carrier 90. The distance between the upper surfaces of 6 is short so that the radial air flow in the upper chamber 920 can be in a laminar flow state. The gas diffusion disk 9 〇 4 is in the lower surface 24 201009106. The width is generally not less than the width of the substrate 900, which is also annularly placed on the substrate carrier 906, in a radial direction such that gas flowing vertically downward from the via 919 can uniformly and completely cover the entire substrate 900. The gas introduction ring 905 is generally placed horizontally above the side wall of the cylindrical reaction chamber 922 and between the lower surface of the reaction chamber top cover 901 and the upper surface of the gas diffusion disk 904 'to be introduced by the gas introduction ring 905 The gas can enter the upper chamber 920. φ The annular substrate carrier 906 is typically placed horizontally on the substrate carrier support tubes 940a and 940b having a plurality of dimples, each pit A substrate sheet 900 is typically placed. The gas introduction ring 907 is generally placed horizontally in the middle of the side wall of the cylindrical reaction chamber 922 and between the annular gas diffusion disk 9〇4 and the annular substrate carrier 9〇6. Each of the gas introduction The ring 907 usually includes a plurality of annular gas nozzles, such as 9〇7a and 907b, which are generally placed in a superimposed arrangement in the vertical direction at a certain interval in the gas introduction ring 907. The reaction chamber is introduced into the reaction chamber by the annular gas nozzle. The direction of gas flow of 922 is generally parallel to or at an oblique angle of less than 9 degrees to the surface of the annular substrate carrier 906. The annular gas nozzles are not in communication with one another, each of the annular gas nozzles The gas supply passage 903b is connected to the outer side of the cylindrical top support 9〇2. The annular gas discharge passage 903b can also be placed horizontally in the middle of the cylindrical top cover 902. The discharge ring is replaced (not shown in Figure 9). The gas discharge ring is located between the annular gas diffusion disk 9〇4 and the annular substrate carrier 9〇6 to maintain a gas flow introduced radially outward from the gas introduction ring 9〇7 into the The laminar flow state is maintained before the gas exits the ring. The body body exhaust ring or the annular gas exhaust passage 25 201009106 the track 903b may also be placed in the cylindrical top cover support 902. An application example of performing chemical vapor deposition using a chemical vapor deposition reactor reaction chamber (shown in Fig. 9) according to another embodiment of the present invention may be as follows. A gas stream comprising primarily a Group V reactant, such as NH3, and another gas stream comprising primarily Group III reactants, such as TMGa, TMA1 and TMIn, radially outward from the annular gas nozzles 907a and 907b, respectively The introduction is introduced into the cylindrical reaction chamber 922. The other one mainly contains an inert gas such as Ar, or a carrier gas such as Η2'N2, or a V-group reactant such as NH3, or a Group III reactant such as TMGa, TMA1 and TMIn, or a mixture thereof The introduction ring 905 is introduced into the upper chamber 920 radially outwardly, and the gas in the upper chamber 920 enters through the through hole 919 in the gas diffusion disk 904 in a direction perpendicular to the surface of the substrate carrier 906. Within the cylindrical reaction chamber 922, a vertical airflow is formed covering the entire surface of the substrate carrier 906. The gas radially entering the cylindrical reaction chamber 922 from the annular gas nozzles 907a and 907b may be outside the cylindrical reaction chamber 922 or the annular gas due to different gas densities, different gas flow rates, and different gas temperatures. An annular vortex is formed on the lower outer side of the diffusion disk 904. The vertical downward flow of the through hole 919 can effectively prevent the formation of the annular vortex. As shown in Fig. 9, the flow in the radial direction from the outside to the inside can maintain its laminar flow state until the reaction chamber 922 is discharged through the annular gas discharge passage 903b. The vertical gas flow and the radial gas flow cross each other and meet and mix near the annular substrate carrier 906, reducing the time during which a gas phase reaction occurs between different reactants' to improve the efficiency of the gas phase reaction and the quality of the vapor phase deposition. The depletion effect of the Group III reactant flowing in the radial direction from the outside to the inside is compensated by the gas flow convergence effect, so that uniform chemical vapor deposition can be obtained without rotating the substrate 900, which simplifies the substrate carrier. The design of 906 reduces the cost of manufacturing and using the cylindrical reaction chamber 922. As shown in FIG. 9, since the gas introduction ring 907 26 201009106 and the gas introduction ring 905 are horizontally placed on the side wall of the cylindrical reaction chamber 922, the design of the reaction chamber top cover 901 can be simplified, and the manufacture thereof can be simplified. The cost. In addition, since the reaction chamber top cover 901 does not have any gas introduction device, the inside of the reaction chamber top cover 901 can be thoroughly cleaned after each chemical vapor deposition, thereby ensuring the repeatability of the chemical vapor deposition process. Reproducibility and consistency. An application example of performing chemical vapor deposition using a chemical vapor deposition reactor reaction chamber (shown in Fig. 9) according to another embodiment of the present invention may be as follows. A gas stream mainly containing a Group V reactant such as NIL· is introduced into the cylindrical reaction chamber 922 from the annular gas nozzle φ 907a in the radial direction from the outside to the inside. Another gas stream comprising mainly Group III reactants, such as TMGa, TMA1 and TMIn, is introduced into the upper chamber 920 radially outwardly from the annular gas introduction ring 905, and the gas in the upper chamber 920 is passed through The through hole 919 in the gas diffusion disk 904 enters the cylindrical reaction chamber 922 in a direction perpendicular to the surface of the substrate carrier 906, and the vertical turbulence formed covers the entire surface of the bottom carrier 906. As shown in Fig. 9, the vertical gas flow is effective to suppress heat convection such that the radial gas flow maintains a laminar flow condition throughout the reaction chamber until all of the gas exits the reaction φ chamber 922 through the annular gas discharge passage 903b. The vertical gas flow and the radial gas flow cross each other and meet and mix near the annular substrate carrier 906, reducing the time for gas phase reaction between different reactants, thereby improving the efficiency of the gas phase reaction and the quality of the vapor phase deposition. The Group III reactant introduced by the gas diffusion disk 904 can uniformly cover the entire surface of the substrate carrier 906. Even if the substrate 900 is not rotated, uniform chemical vapor deposition can be obtained at the substrate 900. The design of the substrate carrier 906 is thereby simplified, reducing the cost of manufacturing and using the cylindrical reaction chamber 922. An application example for performing chemical vapor deposition using a chemical vapor deposition reactor reaction chamber (shown in Figure 9) according to another embodiment of the present invention can be as described in 27 201009106. A gas stream mainly containing a group III reactant such as TMGa, TMA1 and TMIn' is introduced into the dome-shaped reaction chamber 922 from the annular gas nozzle 907b in the radial direction from the outside to the inside. Another gas stream containing mainly a group v reactant, such as NH3, is introduced into the upper chamber 920 radially outwardly from the annular gas introduction ring 905. The gas in the upper chamber 920 is then passed through the gas diffusion disk. The vertical airflow formed by the through holes 919 in the 904 entering the cylindrical reaction chamber 922 in a direction perpendicular to the surface of the substrate carrier 906 covers the entire surface of the substrate carrier 906. The depletion effect of the III-group reactant flowing in the radial direction from the outside to the inside is compensated by the gas-converging effect φ, so that uniform chemical vapor deposition can be obtained without rotating the substrate 900, which simplifies the substrate loading. The design of the disk 906 reduces the cost of manufacturing and using the cylindrical reaction chamber 922. As shown in Fig. 9, the vertical gas flow is effective to suppress heat convection such that the radial gas flow maintains laminar flow conditions throughout the reaction chamber until all of the gas exits the reaction chamber 922 through the annular gas discharge passage 903b. The vertical and radial gas streams are completely separated before entering the cylindrical reaction chamber 922, and the cross gas flow encounters mixing near the substrate carrier 906, which can reduce and suppress the occurrence of gas phase reaction, improve gas phase reaction efficiency and vapor deposition. the quality of. Φ Another embodiment of a chemical vapor deposition reactor reaction chamber as shown in FIG. 9 according to the present invention is to place the annular gas introduction ring horizontally on the upper portion of the cylindrical top cover support 902 (not shown in FIG. 9). Shown) and located between the lower surface of the reaction chamber top cover 9〇1 and the upper surface of the gas diffusion disk 904. The gas introduced into the upper chamber 92 from the radially outward direction by the annular gas introduction ring can also form a vertical downward airflow through the through hole 919 in the gas diffusion disk 904. Inside the cylindrical reaction chamber 922. According to another embodiment of the present invention, a chemical vapor deposition reactor generally has a cylindrical reaction chamber 1 22 (see Fig. 10). The cylindrical reaction chamber 1〇22 has a counter 28 201009106 chamber top cover 1001, a reaction chamber chassis l〇13, a cylindrical reaction chamber side wall 1〇11, a cylindrical top cover support 1002, an annular gas diffusion plate 1004 a gas introduction ring 1005, an annular substrate carrier 1〇〇6, a substrate carrier support tube i〇4〇a and 1040b, a gas introduction ring 1〇〇7, and an annular gas discharge channel 1〇 〇3a, a heating device 1026 placed under the annular substrate carrier, and a venting opening 1009 placed adjacent to the reaction chamber chassis. The cylindrical top cover support 1002 is generally placed at the center of the reaction chamber chassis 1〇13, and the circular dome support 1〇〇2 and the center Φ of the cylindrical reaction chamber 1〇22 are normally overlapped ( Concentric placement method). The top portion of the cylindrical top cover supporting 1〇〇2 is supported to the central portion of the inner side of the reaction chamber top cover 1001, which can effectively alleviate the deformation of the reaction chamber top cover 1001 under low pressure, and simplify the reaction chamber top cover 1〇〇1. The design reduces the manufacturing and use cost of the reaction chamber top cover 1001, so that the cylindrical reaction chamber 1022 can increase the number of bottoms or the bottom area of each of the temples by increasing the diameter of the reaction chamber. The lower surface 1012 of the annular gas diffusion disk 1004 has a plurality of through holes 1〇19, and the annular gas diffusion disk 1004 is generally horizontally placed above the cylindrical reaction chamber 1〇22 near the reaction chamber top cover 1001, and reacts with the reaction. The lower surface of the chamber top cover 1〇〇1 forms a cavity 1020 above the cylindrical reaction chamber 1022. The distance between the upper surface of the annular gas diffusion disk 1004 and the lower surface of the reaction chamber top cover 10i is generally higher than the lower surface of the annular gas diffusion disk 1004 and the upper surface of the substrate carrier 1〇〇6. The distance between them is short so that the radial airflow within the upper chamber 1020 can be in a laminar flow state. The through hole ι 19 having an annular shape on the lower surface of the gas diffusion disk 1004 has a width in the radial direction of not less than a width of the substrate 1000 which is also annularly placed on the substrate carrier 1006 in the radial direction. The gas vertically flowing downward from the through holes 1〇19 can uniformly and completely cover the surface of the entire substrate 1000. 29 201009106 The gas introduction % 1005 is normally placed horizontally on the upper side of the side wall of the cylindrical reaction chamber ι 22 and between the lower surface of the reaction chamber top cover 1〇〇1 and the upper surface of the gas diffusion disk, so that the disorder Gas introduced by the body introduction ring 1005 can enter the upper chamber 1020. The annular substrate carrier 1006 is typically placed horizontally on substrate carrier support tubes 1040a and 1040b having a plurality of recesses therein, each of which typically has a substrate sheet 1 Hey. The gas introduction ring 1007 is normally placed horizontally in the middle of the cylindrical top cover support 1〇〇2 , and between the annular gas diffusion disk 1004 and the annular substrate carrier disk 1〇〇6. Each of the gas introduction rings 1A7 generally includes a plurality of annular gas nozzles 1007a which are generally placed in the gas introduction ring 1007 one by one in a vertical arrangement at a certain interval in the vertical direction. The direction of gas flow introduced into the reaction chamber 1022 by the annular gas nozzle is generally parallel to the surface of the annular substrate carrier 1〇〇6 or at an oblique angle of less than 9 degrees to the surface of the annular substrate carrier 1006. The annular gas nozzles are not in communication with each other. Each of the annular gas nozzles is connected to a respective gas supply unit. The annular gas discharge passage 10a is placed outside the outer φ of the cylindrical reaction chamber 1〇22. The annular gas discharge passage 10a can also be replaced by a gas discharge ring 1?03 horizontally placed on the upper side of the side wall of the cylindrical reaction chamber 1022 (not shown in Fig. 1A). The gas discharge ring 1003 is located between the annular gas diffusion disk 1〇〇4 and the annular substrate carrier 1006 to keep the gas flow introduced from the inside to the outside by the gas introduction ring 10〇7 in the radial direction. The laminar flow state is maintained before the gas discharge ring 1〇〇3. The gas discharge ring 1003 or the annular gas discharge passage i〇〇3a may also be placed in the side wall 1〇11 of the cylindrical reaction chamber 1022. An example of application for chemical vapor deposition using a chemical vapor deposition reactor (shown in Figure 10) in accordance with another embodiment of the present invention can be as described in 201009106. A gas stream mainly containing a Group V reactant such as nh3 is introduced into the cylindrical reaction chamber 1022 from the annular gas nozzle 1007a in the radial direction from the inside to the outside. Another gas stream mainly comprising lanthanum reactants such as TMGa, TMA1 and TMIn is introduced into the upper chamber 1020 from the annular gas introduction ring 1005 in a radially outward direction, and the gas in the upper chamber 1020 is again passed through The through hole 1019 in the gas diffusion disk 1004 enters the cylindrical reaction chamber 1022 in a direction perpendicular to the surface of the substrate carrier 1006, and the vertical airflow formed covers the entire surface of the substrate carrier 1006. As shown in Fig. 10, the flow from the inside to the outside in the radial direction can be maintained in a laminar flow state by the vertical air flow until the reaction chamber 1022 is discharged through the annular gas discharge passage 1003a. The vertical gas flow and the radial gas flow cross each other and meet and mix near the annular substrate carrier 1006, thereby reducing the time for gas phase reaction between different reactants, and improving the efficiency of gas phase reaction and the quality of vapor deposition. The steroid-reactive agent introduced by the gas diffusion disk 1004 can uniformly cover the entire surface of the substrate carrier 1〇〇6. Even if the substrate 1000 is not rotated, uniform chemistry can be obtained at the substrate 1 Vapor deposition, thereby simplifying the design of the substrate carrier 1006, reduces the cost of manufacturing and using the cylindrical reaction chamber 1022. As shown in FIG. 1A, since the gas introduction φ ring 1007 and the gas introduction ring 1005 are horizontally placed on the side wall of the cylindrical reaction chamber 1 〇 22 and the cylindrical top cover support 1002 ′, the reaction chamber top cover can be simplified. The design of 1〇〇1' reduces the cost of manufacturing and use. In addition, since the reaction chamber top cover 1001 does not have any gas introduction device, the inside of the reaction chamber top cover 1001 can be thoroughly cleaned after each chemical vapor deposition, thereby ensuring the repeatability of the chemical vapor deposition process. , reproducibility and consistency. Another embodiment of a chemical vapor deposition reactor reaction chamber as shown in FIG. 10 according to the present invention is to place the annular gas introduction ring horizontally on the upper portion of the cylindrical top cover support 1002 (not shown in FIG. Shown) and located between the lower surface of the reaction chamber top cover 1〇〇1 31 201009106 and the upper surface of the gas diffusion disk 1004. The gas introduced into the upper chamber 1020 radially inwardly from the annular gas introduction ring can also form a vertical downward flow of gas into the cylindrical shape via the through hole 1019 in the gas diffusion disk 1004. Inside the reaction chamber 1022. The cylindrical top cover support in the reaction chamber of the chemical vapor deposition reactor according to the embodiment of the present invention can reduce the deformation of the reaction chamber cover, thereby simplifying the complexity and manufacturing difficulty of designing a large reaction chamber, and reducing manufacturing and use. Cost; the gas diffusion disk in the reaction chamber can provide a vertical airflow to maintain the radial airflow in a laminar state without increasing the complexity of the reaction chamber cover and the manufacturing cost; multiple airflows are introduced into the reaction chamber. 'Allowing different reactants to meet and mix near the surface of the substrate, can reduce the time of gas phase reaction between different reactants, thereby improving the efficiency of chemical vapor reaction, reducing the consumption of various reactants and improving chemical vapor deposition. The mass, vertical uniform airflow or the radial convergence effect caused by the outward inward airflow can eliminate or automatically compensate for the effect of the reactant depletion effect on the vapor deposition uniformity, thereby simplifying the design of the substrate carrier. The cost of manufacturing and using the substrate carrier. [Simple description of the figure] Φ Figure 1: Schematic diagram of the side structure of the reaction chamber of the conventional planetary chemical vapor deposition reactor. Figure 2: Schematic diagram of the side structure of the reaction chamber of a conventional scroll-type chemical vapor deposition reactor. Figure 3: Schematic diagram of the side structure of the reaction chamber of a conventional sprinkler type chemical vapor deposition reactor. Figure 4: Schematic diagram of the side structure of the reaction chamber of a rectangular chemical vapor deposition reactor. Fig. 5 is a side view showing the structure of a reaction chamber of a chemical vapor deposition reactor in which a gas introduction ring 507 is horizontally placed on an upper portion of a side wall of the cylindrical reaction chamber 522. Figure 6 is a schematic side view showing a reaction chamber of a chemical vapor deposition reactor in which a gas introduction ring 607 is horizontally placed on the upper side of the side wall of the cylindrical reaction chamber 622, and a gas introduction disk 604 is placed on the top of the cylindrical reaction chamber 622. . 32 201009106 Figure 7: Schematic diagram of the side structure of the reaction chamber of the chemical vapor deposition reactor, in which the gas introduction ring 707 is horizontally placed on the upper portion of the cylindrical top cover support 7〇2, and the gas introduction disk 704 is placed in the cylindrical reaction chamber. The top of the 722. Fig. 8 is a side view showing the structure of a reaction chamber of a chemical vapor deposition reactor in which a gas introduction disk 804 is placed on top of the cylindrical reaction chamber 822. Figure 9 is a side view showing the structure of a reaction chamber of a chemical vapor deposition reactor in which a gas introduction ring 907 is horizontally placed in the middle of the side wall of the cylindrical reaction chamber 922, and a gas diffusion disk 904 is horizontally placed in the cylindrical reaction chamber 922. The reaction chamber top cover 901 is below. Figure 10 is a schematic side view showing the reaction chamber of a chemical vapor deposition reactor in which a gas introduction ring 1007 is horizontally placed in the middle of the cylindrical header support 1002, and a gas diffusion disk 1004 is horizontally placed in the cylindrical reaction chamber 1022. The reaction chamber is under the cover 1001. [Main component symbol description] 101. Reaction chamber top cover 103. Exhaust gas collection ring 104. Quartz disk 106. Rotatable graphite disk 107. Central gas introduction nozzle 120. Clearance 122. Reaction chamber 126. Heating device 127·Satellite boat 200. Substrate 201. Reaction chamber top cover 203. Exhaust gas discharge port 204. Inlet flange 206. Substrate carrier 222. Reaction chamber 226. Heating device 303. Exhaust gas discharge port 304. Shower head 306. Substrate carrier plate 322 ·Reaction chamber 33 201009106
326.加熱裝置 400.襯底 403.尾氣出口 404.第二氣體導入裝置 406.石墨盤 407.第一氣體導入裝置 422.反應腔 426.加熱裝置 502.頂蓋支撐 503b.環形氣體排出通道 506.環形襯底載盤 507.氣體導入環 507a、507b、507c.環形氣體喷嘴 509.排氣孔 511.側壁 513.反應腔底盤 522.圓柱形反應腔 526.加熱裝置 540a、540b.襯底載盤支撐圓管 600.襯底 601.反應腔頂蓋 602.圓柱形頂蓋支撐 603.氣體排出環 604.氣體引入盤 606.環形襯底載盤 607.氣體導入環 607a、607b.環形氣體噴嘴 609.排氣孔 611.側壁 612.下表面 613.反應腔底盤 619.通孔 622.圓柱形反應腔 626.加熱裝置 640a、640b.襯底載盤支撐圓管 700.襯底 701.反應腔頂蓋 702.圓柱形頂蓋支撐 703a.環形氣體排出通道 704.氣體引入盤 706.環形襯底載盤 707.氣體導入環 707a、707b.環形氣體喷嘴 709.排氣孔 711.側壁 712.下表面 713.反應腔底盤 34 201009106 719.通孔 726.加熱裝置 800.襯底 802.圓柱形頂蓋支撐 804.氣體引入盤 809a、809b.排氣孔 812.下表面 819.通孔 φ 826.加熱裝置 900.襯底 902.圓柱形頂蓋支撐 904.環形氣體擴散盤 906. 環形襯底載盤 907. 氣體導入環 911.側壁 913.反應腔底盤 φ 920.上腔 926.加熱裝置 1000.襯底 1002.圓枉形頂蓋支撐 1004.環形氣體擴散盤 1006.環形襯底載盤 1009.排氣孔 1012.下表面 1007a.環形氣體喷嘴 722.圓柱形反應腔 740a、740b.襯底載盤支撐圓管 801.反應腔頂蓋 803a、803b.環形氣體排出通道 806.環形襯底載盤 811.側壁 813.反應腔底盤 822.圓柱形反應腔 840a、840b.襯底載盤支撐圓管 901.反應腔頂蓋 903b.環形氣體排出通道 905.氣體引入環 909.排氣孔 907a ' 907b. 912.下表面 919.通孔 922.圓柱形反應腔 940a、940b.襯底載盤支撐圓管 1001.反應腔頂蓋 1003a.環形氣體排出通道 1005.氣體引入環 1007.氣體導入環 1011.側壁 1013.反應腔底盤 1019.通孔 35 201009106 1020.上腔 1022.圓柱形反應腔 1026.加熱裝置 1040a、1040b.襯底載盤支撐圓管326. Heating device 400. Substrate 403. Exhaust gas outlet 404. Second gas introduction device 406. Graphite disk 407. First gas introduction device 422. Reaction chamber 426. Heating device 502. Roof support 503b. Annular substrate carrier 507. Gas introduction ring 507a, 507b, 507c. Annular gas nozzle 509. Vent hole 511. Side wall 513. Reaction chamber chassis 522. Cylindrical reaction chamber 526. Heating device 540a, 540b. Disk support circular tube 600. Substrate 601. Reaction chamber top cover 602. Cylindrical top cover support 603. Gas discharge ring 604. Gas introduction disk 606. Annular substrate carrier 607. Gas introduction ring 607a, 607b. 609. vent 611. side wall 612. lower surface 613. reaction chamber chassis 619. through hole 622. cylindrical reaction chamber 626. heating device 640a, 640b. substrate carrier support round tube 700. substrate 701. Cap 702. Cylindrical cap support 703a. Annular gas exhaust channel 704. Gas introduction disk 706. Annular substrate carrier 707. Gas introduction ring 707a, 707b. Annular gas nozzle 709. Vent hole 711. Side wall 712. Surface 713. Reaction chamber chassis 34 201009106 719. Hole 726. Heating device 800. Substrate 802. Cylindrical cap support 804. Gas introduction disk 809a, 809b. Vent hole 812. Lower surface 819. Through hole φ 826. Heating device 900. Substrate 902. Cylindrical top Cover support 904. Annular gas diffusion disk 906. Annular substrate carrier 907. Gas introduction ring 911. Side wall 913. Reaction chamber chassis φ 920. Upper chamber 926. Heating device 1000. Substrate 1002. Round dome support 1004 Annular gas diffusion disk 1006. Annular substrate carrier 1009. Vent hole 1012. Lower surface 1007a. Annular gas nozzle 722. Cylindrical reaction chamber 740a, 740b. Substrate carrier support circular tube 801. Reaction chamber top cover 803a 803b. Annular gas discharge channel 806. Annular substrate carrier 811. Side wall 813. Reaction chamber chassis 822. Cylindrical reaction chamber 840a, 840b. Substrate carrier support circular tube 901. Reaction chamber top cover 903b. Channel 905. Gas introduction ring 909. Vent hole 907a '907b. 912. Lower surface 919. Through hole 922. Cylindrical reaction chamber 940a, 940b. Substrate carrier support circular tube 1001. Reaction chamber top cover 1003a. Discharge channel 1005. Gas introduction ring 1007. Gas introduction ring 1011. Side wall 1013. Reaction chamber chassis 1019. Through hole 35 201009106 1020. Upper chamber 1022. Cylindrical reaction chamber 1026. Heating device 1040a, 1040b. Substrate carrier supporting round tube
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