TW200305658A - Device for depositing thin layers on a substrate - Google Patents

Device for depositing thin layers on a substrate Download PDF

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Publication number
TW200305658A
TW200305658A TW092105594A TW92105594A TW200305658A TW 200305658 A TW200305658 A TW 200305658A TW 092105594 A TW092105594 A TW 092105594A TW 92105594 A TW92105594 A TW 92105594A TW 200305658 A TW200305658 A TW 200305658A
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Taiwan
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gas
substrate
plate
patent application
reaction chamber
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TW092105594A
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Chinese (zh)
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Holger Jurgensen
Gerd Strauch
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Aixtron Ag
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles

Abstract

The invention relates to a device for depositing thin layers on a substrate, comprising a process chamber (6) arranged in a reactor housing (1), the bottom of the process chamber being formed by a susceptor (7) for receiving at least one substrate and a gas inlet organ (2) being assigned to the lid of the process chamber, in which the process gas can be introduced into the process chamber by means of a gas outlet surface which is substantially evenly distributed on the surface thereof and which points towards the susceptor. In order to prevent parasitic accumulation in the gas inlet organ, the gas outlet surface is formed by a gas-permeable diffuser plate (15), which can extend parallel to a gas outlet plate (13) having a plurality of gas outlet holes (14).

Description

200305658 玖、發明說明 【發明所屬之技術領域】 本發明係有關一種在基板上沉積薄膜之裝置，其包括一 設在一反應器殼體中的反應室，該反應室底部由一基板座 構成，基板座上至少承載一基板，反應室蓋體設有一進氣 機構’反應氣體可由該進氣機構朝向基板座的氣體流出面 整體基本上平面均勻分佈地流入反應室中。 【先前技術】 專利DE 69 5 047 62 T2曾提出此種裝置。其提出一種在 反應室基板上沉積III-V族半導體的裝置及方法，其基板 放置在一基板座上，該基板座構成反應室底部，反應室蓋 體由一進氣機構構成。進氣機構具一平的氣體流出面，其 與基板座表面平行並有一距離。基板座直徑大於基板座與 氣體流出面淨距離甚多。爲使由進氣機構流出之反應氣體 在朝向基板座的氣體流出面整體達到平面均勻分佈，故氣 體流出面設有複數個開孔，其爲穿過進氣機構底板之通道 的開口，該通道延伸自一氣體空間，氣體經一氣體輸入管 而被輸送至該氣體空間中。此種蓮蓬頭式反應室氣體輸入 的優點爲，基板座的基板上可均勻成長出半導體薄膜。基 板座下側，亦即背向反應室的一側，被一高頻線圈感應加 熱。基板座可被驅動而繞其軸旋轉。200305658 发明 Description of the invention [Technical field to which the invention belongs] The present invention relates to a device for depositing a thin film on a substrate, which includes a reaction chamber provided in a reactor housing, and the bottom of the reaction chamber is composed of a substrate holder. At least one substrate is carried on the substrate holder. The reaction chamber cover is provided with an air intake mechanism, and the reaction gas can flow into the reaction chamber from the gas inlet surface of the gas intake mechanism toward the substrate holder. [Prior art] Patent DE 69 5 047 62 T2 has proposed such a device. It proposes a device and method for depositing a III-V semiconductor on a substrate of a reaction chamber. The substrate is placed on a substrate holder, which forms the bottom of the reaction chamber, and the cover of the reaction chamber is formed by an air inlet mechanism. The air intake mechanism has a flat gas outflow surface, which is parallel to the surface of the substrate holder and has a distance. The diameter of the substrate holder is larger than the net distance between the substrate holder and the gas outflow surface. In order to make the reaction gas flowing out of the air intake mechanism to be evenly distributed on the entire plane of the gas outflow surface facing the substrate base, the gas outflow surface is provided with a plurality of openings, which are openings of the passage through the bottom plate of the air intake mechanism. Extending from a gas space, the gas is delivered into the gas space through a gas inlet pipe. An advantage of such a shower head type reaction chamber gas input is that a semiconductor thin film can be uniformly grown on the substrate of the substrate holder. The lower side of the substrate base, that is, the side facing away from the reaction chamber, is heated by induction by a high-frequency coil. The substrate holder can be driven to rotate about its axis.

Journal of Crystal Growth 195 (1998) 725-732 曾採 g寸基 板座轉速、基板座與氣體流出面距離及基板座直徑對薄膜 特性的影響。其結論爲，距離小時薄膜特性爲最佳且反應 6 326\專利說明書(補件)\92-05\92105594 200305658 氣體的使用效率提局。距離爲1 6至2 5 m m時可達到最佳 結果。 由於此種噴嘴狀的開孔，反應氣體噴射式輸入反應室 中。基板座與氣體流出開孔距離夠大時，噴射對薄膜特性 的影響幾乎無法察覺。由氣體流出開孔噴出的噴氣在擴散 邊緣層上方散開而彼此相碰，故不會對薄膜均勻度產生影 響。反應室壓力提高亦可減少該種影響。基板座被加熱至 一相當高的溫度時，進氣機構爲避免反應氣體過早解離而 寄生沉積故需被冷卻。先前技術中係利用進氣機構底板的 水冷卻。反應室高度下降時的風險爲，反應室中垂直溫度 梯度提高，擴散輸送機制因而改變，故氣體流出面開孔之 間的部分仍會出現沉積。開孔之作用正如噴嘴。開孔邊緣 可能出現氣流分離。此氣流分離特性受雷諾數大小左右。 先前技術中有設錐形開孔。但如此亦無法完全避免氣流分 離。氣流分離會導致兩噴嘴間一空間有少量氣流流過，故 噴氣出現一動態壓差。因此，該空間材料濃度經由擴散而 提高，使得氣相或進氣機構表面出現凝結。進氣機構溫度 提高雖可防止凝結，但會導致材料在該處局部不利解離， 而出現寄生成長。沉積於該處的材料會由於剝落而對CVD 製程產生不利影響。 【發明內容】 本發明之目的因此在於提供一種避免在進氣機構上出 現寄生沉積之對策。 本目的由申請專利範圍所述之本發明而達成。依據申請 7 326\專利說明書(補件)\92·05\92105594 200305658 專利範圍第1項，氣體流出面由一透氣的擴散板構成。該 擴散板可平行於具有複數個篩孔狀氣體流出開孔的氣體流 出板。該氣體流出板可構成進氣機構一室之底板。基板座 與氣體流出面，亦即擴散板下側的距離優先小於8 0 mm或 5 0 m m。該距離甚至可小於4 0 m m或3 0 m m。亦可使該距 離小於2 5 m m，2 0 m m，1 6 m m或1 1 m m。反應室被一排氣 環包圍。該排氣環具複數個朝向圓形反應室的開孔，反應 室氣體可經此開孔流入排氣環中空空間中。排氣環具一或 多排氣管，其通到一幫浦，幫浦功率可被調整，以設定反 應室中的總壓力。擴散板可優先由多孔材料製成。該多孔 材料可是一金屬材料、一陶瓷材料或一石英玻璃。故擴散 板可是一多孔固態發泡體。但擴散板亦可由一多層織物或 一不織布構成。重要的是，擴散板可使由不同位置流出的 氣流擴散，使得一均勻的氣簾進入反應室中。爲此可使擴 散板貼附進氣機構氣體流出板下側。由於進氣機構氣體流 出板被冷卻，如專利DE 6 9 5 04 7 62 T2所述，擴散板因此 貼附接觸而亦被冷卻。氣體流出板篩孔狀開孔彼此的距離 由於此種設計而可相當大，故可由細管構成之開孔之間仍 有足夠的位置設置冷媒流通空間。開孔的距離因此可大於 基板座與氣體流出面距離的四分之一。 氣體流出板開孔的距離甚至可大於一般使開孔噴出的 噴氣在擴散界限層之前達到擴散所需。雖然氣體由開孔噴 到擴散板，但氣體可降低流速，尤其在整個氣體流出面上 以相同流速進入反應室中。進氣機構幾乎不再產生噴氣。 8 326\專利說明書(補件)\92-05\92】05594 200305658 擴散板材料厚度可適當選擇，以使擴散板朝向反應室之下 側的溫度仍然不會使材料局部解離。故成長不會受到限 制。擴散板表面溫度一般在1 0 0。C至3 0 0。C之間。擴散板 多孔性、材料厚度及導熱性可配合各製程參數，尤其是攜 帶氣體。 由於擴散板之設置，反應室高度可下降而小於習知氣體 流出面之設計。如此對Μ Ο C V D法半導體薄膜之沉積特別 有利，因該處之成長受限於擴散。反應氣體因此直接均勻 輸入擴散區。 以下將依據附圖詳細說明本發明一實施例。 【實施方式】 反應器殼體1由一下部件及一蓋體3構成，下部件包括 壁4及底部5，蓋體3可被取下以進行反應室6的裝載。 蓋體3上固定有一進氣機構2。氣體經一氣體輸入管17被 輸送入該進氣機構2。進氣機構2具一中空室，氣體輸入 管17通到該室中。中空室上方爲一蓋板11，周圍爲一圓 環1 2，朝向反應室6則爲一氣體流出板1 3。氣體流出板可 如專利DE 695 047 62 Τ2所述爲水冷卻。亦可由兩塊板13‘， 1 3 “構成，其間設使冷卻劑流過的通道。進氣機構2中空室 可設一隔板1 〇以促使氣體均勻分佈，氣體只可流過其周 圍。 氣體流出板1 3下方設一擴散板1 5。該擴散板1 5可是附 加的板，其貼附在氣體流出板1 3下側。 由擴散板1 5自由表面所構成之氣體流出面的距離Η處 9 326\專利說明書(補件)\92·〇5\921〇5594 200305658 平行於擴散板1 5設有一圓形基板座7，其下方可被一高頻 加熱線圈1 6感應加熱。該基板座7可例如由石英、石墨或 被塗佈石墨構成，並可繞其中心軸旋轉。基板座被驅動旋 轉。基板座7朝向擴散板1 5的表面上可放置一或多個基板 8 〇 反應室6被一排氣環9包圍。該排氣環具一環形中空空 間，中空空間朝向反應室6設有開孔，反應氣體可由該開 孔流入排氣環9中空空間中。排氣環9在一處或多處設有 未示出之排氣管，其通到一未示出之幫浦。幫浦功率可調 整。如此可設定反應室6中的總氣壓。 擴散板1 5可由一多孔材料製成，例如石英玻璃料。但 擴散板亦可由金屬製成，尤其是高級鋼。陶瓷材料亦可被 使用。擴散板可具多孔硬發泡體之結構，但擴散板亦可是 一不織布或多層織物。 對擴散板1 5而言重要的是其特性，亦即使進氣機構2 由氣體流出開孔1 4所流出具高流速之氣體均勻進入反應 室6中。由氣體流出開孔1 4流出之氣體大面積地進入反應 室6中，氣體流速被均勻化並降低，而減緩未設擴散板時 氣體直接由氣體流出口噴出的作用。此處不存在先前技術 中開孔旁的不利低流度區。濃度不會提高，故不會有凝結。 擴散板下側的溫度可適當選擇，以使該處不會發生材料的 解離。溫度優先在l〇〇°C至3 00。(：之間。擴散板材料厚度 及多孔性可適當選擇，以使各氣體流出開孔1 4流出的氣流 擴散開來。 10 326\專利說明書(補件)\92-05\92105594 200305658 擴散板1 5緊貼尤其爲水冷卻之氣體流出板i 3。故擴散 板1 5亦被維持在一較低溫下，使得反應室6中可有一較大 的垂直溫度梯度。 本裝置的總氣壓可在10 mb ar至大氣壓力之間，但亦可 爲更低之壓力。基板座轉速可在lOrpm至lOOOrpm之間。 反應室高度優先爲50 mm，直徑則大於1 0，20或30 cm。 輸入反應室的總氣流可在8 s 1 m至5 0 s 1 m之間。但反應室 高度亦可小於50 mm，故反應室高度可爲75，50，40，35, 3 0, 2 5，1 5，1 1或數毫米。 在某些條件下需使高度Η不僅有一上限亦有一下限。由 於製造公差或材料特性及不均勻熱膨脹而無法確保氣體流 出面1 5與基板座表面平行時，此種下限爲有必要。故此時 使反應室局度不小於1 1 mm爲有利。 所有揭示特徵本身皆具有發明性質。本發明揭示之特徵 完全包含於本案之申請專利範圍中。 【圖式簡單說明】 圖1爲根據本發明之沉積薄膜裝置反應器之剖面圖。 (元件符號說明） 1反應器殼體 2進氣機構 3蓋體 4 壁 5底部 6反應室 11 326\專利說明書(補件)\92·05\92〗05594 200305658 7基板座 8基板 9 排氣環 10 隔板 11 蓋板 12 圓環 13 氣體流出板 14 氣體流出開孔 15 擴散板 16 高頻加熱線圈 17 氣體輸入管 Η 距離 13“ 板 13“ 板 12 326\專利說明書(補件)\92·05\92105594Journal of Crystal Growth 195 (1998) 725-732 has adopted the influence of g-inch substrate holder rotation speed, distance between substrate holder and gas outflow surface, and substrate holder diameter on film properties. The conclusion is that the film characteristics are optimal and the response is small when the distance is small. 6 326 \ Patent Specification (Supplement) \ 92-05 \ 92105594 200305658 The efficiency of gas use is improved. Best results are achieved at distances of 16 to 25 mm. Due to this nozzle-like opening, the reaction gas is sprayed into the reaction chamber. When the distance between the substrate holder and the gas outflow opening is large enough, the influence of the spray on the film characteristics is almost imperceptible. The jets ejected from the gas outflow openings spread above the diffusion edge layer and collide with each other, so it will not affect the uniformity of the film. Increasing the pressure in the reaction chamber can also reduce this effect. When the substrate holder is heated to a relatively high temperature, the air intake mechanism needs to be cooled in order to avoid premature dissociation of the reaction gas and parasitic deposition. In the prior art, water cooling of the bottom plate of the air intake mechanism was used. The risk when the height of the reaction chamber decreases is that the vertical temperature gradient in the reaction chamber increases, and the diffusion transport mechanism is changed, so the part between the openings on the gas outflow surface will still deposit. The function of the opening is like a nozzle. Air separation may occur at the edge of the opening. This air separation characteristic is influenced by the Reynolds number. In the prior art, a tapered opening is provided. However, this does not completely prevent airflow separation. Air flow separation will cause a small amount of air flow in a space between the two nozzles, so a dynamic pressure difference occurs in the air jet. Therefore, the concentration of the space material is increased by diffusion, so that condensation occurs on the surface of the gas phase or the air intake mechanism. Increasing the temperature of the air intake mechanism can prevent condensation, but it will cause local unfavorable dissociation of the material there, and parasitic growth will occur. The material deposited there can adversely affect the CVD process due to spalling. SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a countermeasure for avoiding parasitic deposition on an air intake mechanism. This object is achieved by the invention described in the scope of the patent application. According to the application 7 326 \ Patent Specification (Supplement) \ 92 · 05 \ 92105594 200305658 patent scope item 1, the gas outflow surface is composed of a breathable diffusion plate. The diffusion plate may be parallel to a gas outflow plate having a plurality of mesh-like gas outflow openings. The gas outflow plate may constitute a bottom plate of a chamber of the air intake mechanism. The distance between the substrate holder and the gas outflow surface, that is, the lower side of the diffuser plate is preferably less than 80 mm or 50 mm. This distance can even be less than 40 m m or 30 m m. The distance can also be made smaller than 25 m m, 20 m m, 16 m m or 11 m m. The reaction chamber is surrounded by an exhaust ring. The exhaust ring has a plurality of openings facing the circular reaction chamber, and the gas in the reaction chamber can flow into the hollow space of the exhaust ring through the openings. The exhaust ring is provided with one or more exhaust pipes, which lead to a pump, and the pump power can be adjusted to set the total pressure in the reaction chamber. The diffusion plate may be preferably made of a porous material. The porous material may be a metal material, a ceramic material or a quartz glass. Therefore, the diffuser plate may be a porous solid foam. However, the diffuser plate may be composed of a multilayer fabric or a non-woven fabric. What is important is that the diffuser plate can diffuse the airflow flowing from different positions, so that a uniform air curtain enters the reaction chamber. To this end, the diffuser plate can be attached to the underside of the air intake mechanism gas. Since the gas flow-out plate of the intake mechanism is cooled, as described in the patent DE 6 9 5 04 7 62 T2, the diffuser plate is thus attached and also cooled. The distance between the sieve openings of the gas outflow plate can be quite large due to this design, so there is still sufficient space for the refrigerant circulation space between the openings formed by the thin tubes. The distance of the openings can therefore be greater than a quarter of the distance between the substrate holder and the gas outflow surface. The distance that the gas flows out of the openings of the plate can even be greater than the gas jets normally ejected by the openings to achieve diffusion before the diffusion boundary layer. Although the gas is sprayed from the openings to the diffusion plate, the gas can reduce the flow rate, especially into the reaction chamber at the same flow rate on the entire gas outflow surface. The air intake mechanism almost no longer produces air jets. 8 326 \ Patent Specification (Supplement) \ 92-05 \ 92】 05594 200305658 The thickness of the diffuser plate material can be appropriately selected so that the temperature of the diffuser plate facing the lower side of the reaction chamber will not cause the material to dissociate locally. Therefore, growth will not be restricted. The surface temperature of the diffusion plate is generally 100 °. C to 3 0 0. C between. The porosity, material thickness, and thermal conductivity of the diffusion plate can be matched with various process parameters, especially the carrying gas. Due to the arrangement of the diffusion plate, the height of the reaction chamber can be lowered than the conventional design of the gas outflow surface. This is particularly advantageous for the deposition of the semiconductor film of the MC V D method, where growth is limited by diffusion. The reaction gas is thus directly fed into the diffusion zone uniformly. Hereinafter, an embodiment of the present invention will be described in detail based on the drawings. [Embodiment] The reactor housing 1 is composed of a lower part and a cover 3, and the lower part includes a wall 4 and a bottom part 5. The cover 3 can be removed to load the reaction chamber 6. An air intake mechanism 2 is fixed on the cover 3. The gas is delivered into the air intake mechanism 2 through a gas inlet pipe 17. The air intake mechanism 2 has a hollow chamber into which a gas inlet pipe 17 opens. Above the hollow chamber is a cover plate 11 surrounded by a circular ring 12 and toward the reaction chamber 6 is a gas outflow plate 1 3. The gas outflow plate can be water cooled as described in patent DE 695 047 62 T2. It can also be composed of two plates 13 ', 1 3 "with a passage through which the coolant flows. The hollow chamber of the air intake mechanism 2 can be provided with a partition plate 10 to promote the uniform distribution of the gas, and the gas can only flow around it. A diffusion plate 15 is provided below the gas outflow plate 15. The diffusion plate 15 may be an additional plate attached to the lower side of the gas outflow plate 13. The distance of the gas outflow surface formed by the free surface of the diffusion plate 15 Η 处 9 326 \ Patent Specification (Supplement) \ 92 · 〇5 \ 921〇5594 200305658 A circular base plate 7 is arranged parallel to the diffuser plate 15, and a high-frequency heating coil 16 can be used for induction heating below. The substrate holder 7 may be made of, for example, quartz, graphite, or coated graphite, and may rotate around its central axis. The substrate holder is driven to rotate. The surface of the substrate holder 7 facing the diffusion plate 15 may place one or more substrates 8. The reaction chamber 6 is surrounded by an exhaust ring 9. The exhaust ring has an annular hollow space, and the hollow space is provided with an opening toward the reaction chamber 6. The reaction gas can flow into the hollow space of the exhaust ring 9 through the opening. The exhaust ring 9 One or more exhaust pipes are provided, which are not shown The pump power can be adjusted. In this way, the total air pressure in the reaction chamber 6 can be set. The diffusion plate 15 can be made of a porous material, such as quartz frit. However, the diffusion plate can also be made of metal, especially high-grade Steel. Ceramic materials can also be used. The diffuser plate can have a structure of porous rigid foam, but the diffuser plate can also be a non-woven fabric or a multilayer fabric. What is important for the diffuser plate 15 is its characteristics, even if the air intake mechanism 2 The gas with a high flow rate flowing out of the gas outflow openings 1 4 uniformly enters the reaction chamber 6. The gas flowing out of the gas outflow openings 14 enters the reaction chamber 6 in a large area, and the gas flow rate is uniformized and reduced, and Slows down the gas ejection directly from the gas outlet when no diffusion plate is provided. There is no disadvantageous low-fluidity zone near the opening in the prior art. The concentration will not increase, so there will be no condensation. Can be appropriately selected so that no material dissociation occurs at this point. The temperature is preferably between 100 ° C and 300. (::. The thickness and porosity of the diffusion plate material can be appropriately selected so that each gas flows out of the opening 1 4 streams The airflow diffuses. 10 326 \ Patent Specification (Supplement) \ 92-05 \ 92105594 200305658 The diffuser plate 1 5 is close to the gas outflow plate i 3 which is especially water-cooled. Therefore, the diffuser plate 15 is also maintained at a relatively low temperature. At low temperatures, there can be a large vertical temperature gradient in the reaction chamber 6. The total air pressure of the device can be between 10 mb ar to atmospheric pressure, but it can also be a lower pressure. The rotation speed of the substrate holder can be 10 rpm to 1000 rpm The height of the reaction chamber is preferably 50 mm, and the diameter is greater than 10, 20 or 30 cm. The total airflow entering the reaction chamber can be between 8 s 1 m and 50 0 s 1 m. However, the height of the reaction chamber can also be less than 50 mm, so the height of the reaction chamber can be 75, 50, 40, 35, 30, 25, 15, 5, 11 or several millimeters. Under certain conditions, it is necessary to make the height Η not only an upper limit but also a lower limit. This lower limit is necessary when it is not possible to ensure that the gas outflow surface 15 is parallel to the surface of the substrate seat due to manufacturing tolerances or material characteristics and uneven thermal expansion. Therefore, at this time, it is advantageous to make the locality of the reaction chamber not less than 11 mm. All disclosed features are inherently inventive. The features disclosed by the present invention are completely included in the scope of patent application of this case. [Brief Description of the Drawings] FIG. 1 is a sectional view of a reactor for a thin film deposition apparatus according to the present invention. (Description of component symbols) 1 reactor housing 2 air inlet mechanism 3 cover 4 wall 5 bottom 6 reaction chamber 11 326 \ Patent Specification (Supplement) \ 92 · 05 \ 92〗 05594 200305658 7 base plate 8 base plate 9 exhaust Ring 10 Baffle 11 Cover 12 Ring 13 Gas outflow plate 14 Gas outflow opening 15 Diffusion plate 16 High-frequency heating coil 17 Gas input tube 距离 Distance 13 "plate 13" plate 12 326 \ Patent Specification (Supplement) \ 92 05 \ 92105594

Claims (1)

200305658 拾、療請專_範費…' 1. 一種在基板上沉積薄膜之裝置，其包括一設在一反應 器殻體（1)中的反應室（6)，該反應室底部由一基板座（7)構 成，基板座上至少承載一基板，反應室蓋體設有一進氣機 構（2)，反應氣體可由該進氣機構朝向基板座的氣體流出面 整體基本上平面均勻分佈地流入反應室中，其特徵爲，氣 體流出面由一透氣的擴散板（1 5 )構成。 2 ·如申請專利範圍第1項之裝置，其中擴散板（1 5 )平行 於具有複數個篩孔狀氣體流出開孔（〗4)的氣體流出板 (13)〇 3 ·如申請專利範圍第1項之裝置，其中氣體流出板（1 3) 構成進氣機構（2)—室之底板。 4·如申請專利範圍第1項之裝置，其中基板座（7)與氣體 流出面的距離（Η )小於5 0 m m，小於4 0 m m，小於3 0 m m， 小於2 5 m m，小於 1 6 m m或小於1 1 m m。 5·如申請專利範圍第1項之裝置，其中反應室（6)被一排 氣環（9)包圍。 6 ·如申請專利範圍第〗項之裝置，其中擴散板（1 5 )由多 孔金屬、陶瓷材料或石英玻璃製成。 7·如申請專利範圍第1項之裝置，其中擴散板（15)是一 多孔固態發泡體。 8.如申請專利範圍第1項之裝置，其中擴散板（15)是一 織物或一不織布。 9 ·如申請專利範圍第1項之裝置，其中擴散板（1 5 )貼附 13 326\專利說明書(補件)\92-〇5\92105594 200305658 尤其被水冷卻的热體流出板（1 3)下側。 10·如申請專利範圍第9項之裝置，其中氣體流出板（13) 開孔距離大於基板座與擴散板（1 5)氣體流出面距離（H)的 —半 ° 1 1 ·如申請專利範圍第1項之裝置，其中擴散板厚度爲 3，5，7，9 或 1 1 mm。 326\專利說明書(補件)\92-05\92105594 14200305658 Pick up and treat _ Fan Fei ... '1. A device for depositing a thin film on a substrate, comprising a reaction chamber (6) provided in a reactor housing (1), the bottom of the reaction chamber consists of a substrate The seat (7) is composed of at least one substrate carried on the substrate seat, and the reaction chamber cover is provided with an air inlet mechanism (2), and the reaction gas can flow into the reaction from the gas inlet surface of the substrate seat toward the substrate outflow surface of the substrate in a substantially uniform plane as a whole The chamber is characterized in that the gas outflow surface is constituted by a gas-permeable diffusion plate (1 5). 2. The device according to item 1 of the scope of patent application, wherein the diffusion plate (1 5) is parallel to the gas outflow plate (13) having a plurality of sieve-shaped gas outflow openings (〗 4). The device of item 1, wherein the gas outflow plate (1 3) constitutes the air intake mechanism (2) —the floor of the chamber. 4. The device according to item 1 of the scope of patent application, wherein the distance (Η) between the substrate holder (7) and the gas outflow surface is less than 50 mm, less than 40 mm, less than 30 mm, less than 25 mm, and less than 16 mm or less than 1 1 mm. 5. The device according to item 1 of the scope of patent application, wherein the reaction chamber (6) is surrounded by an exhaust ring (9). 6 · The device according to the scope of the patent application, wherein the diffusion plate (15) is made of porous metal, ceramic material or quartz glass. 7. The device according to item 1 of the scope of patent application, wherein the diffusion plate (15) is a porous solid foam. 8. The device according to the scope of patent application, wherein the diffusion plate (15) is a woven fabric or a non-woven fabric. 9 · As for the device in the scope of patent application, the diffuser plate (1 5) is attached with 13 326 \ Patent Specification (Supplement) \ 92-〇5 \ 92105594 200305658, especially the hot water cooling outflow plate (1 3 ) Underside. 10 · For the device in the ninth scope of the patent application, where the distance between the openings of the gas outflow plate (13) is larger than the distance between the substrate base and the diffuser plate (15) —the gas outflow surface (H) —half ° 1 1 The device of item 1, wherein the thickness of the diffusion plate is 3, 5, 7, 9 or 11 mm. 326 \ Patent Specification (Supplement) \ 92-05 \ 92105594 14
TW092105594A 2002-03-15 2003-03-14 Device for depositing thin layers on a substrate TW200305658A (en)

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