KR101775318B1 - 반도체 프로세싱 리액터 및 그의 컴포넌트들 - Google Patents

반도체 프로세싱 리액터 및 그의 컴포넌트들 Download PDF

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KR101775318B1
KR101775318B1 KR1020167023913A KR20167023913A KR101775318B1 KR 101775318 B1 KR101775318 B1 KR 101775318B1 KR 1020167023913 A KR1020167023913 A KR 1020167023913A KR 20167023913 A KR20167023913 A KR 20167023913A KR 101775318 B1 KR101775318 B1 KR 101775318B1
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에릭 쉬로
모히스 버기스
칼 화이트
헤르베르트 테어호르스트
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Abstract

리액터는 반응 챔버 (16) 및 배기 어셈블리 (18) 에 동작적으로 접속된 가스 전달 시스템 (14) 을 인클로징하는 하우징을 갖는다. 가스 전달 시스템은 반응 챔버에 적어도 하나의 프로세스 가스를 제공하는 복수의 가스 라인을 포함한다. 가스 전달 시스템은 적어도 하나의 프로세스 가스를 수신하기 위해 믹서 (20) 를 더 포함한다. 믹서는 프로세스 가스를 확산시키도록 구성되는 디퓨저 (22) 에 동작적으로 접속된다. 디퓨저는 반응 챔버의 상부면 (24) 에 직접 부착되어, 그들 사이에 디퓨저 볼륨을 형성한다. 디퓨저는 프로세스 가스가 반응 챔버 내로 도입되기 전에 디퓨저 볼륨을 통과할 때 그 프로세스 가스에 흐름 제한을 제공하도록 구성되는 적어도 하나의 분배면을 포함한다. 반응 챔버는 반도체 기판이 프로세싱을 위해 배치되는 반응 공간을 규정한다. 배기 어셈블리는 반응 공간으로부터 미반응 프로세스 가스 및 폐수를 빼내기 위해 반응 챔버에 동작적으로 접속된다.

Description

반도체 프로세싱 리액터 및 그의 컴포넌트들{SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF}
관련 출원에 대한 상호 참조
본 출원은 35 U.S.C. 119(e) 하에서, 2009년 4월 6일자로 출원된 미국 가특허출원 제61/167,093호 및 2010년 4월 5일자로 출원된 미국 정규특허출원 제12/754,223호에 대해 우선권을 주장한다.
본 출원은 일반적으로 반도체 프로세싱 장비에 관한 것으로, 상세하게는 기판 반응 챔버에 프로세스 가스를 전달하는 장치 및 시스템에 관한 것이다.
원자층 증착 (atomic layer deposition; "ALD") 은 실리콘 웨이퍼와 같은 기판 상에 재료들의 박막을 형성하기 위해 반도체 산업에서 잘 알려진 프로세스이다. ALD 는, 다수의 초박막층들의 증착을 통하여 막이 형성되는 기상 증착 (vapor deposition) 의 타입이며, 그 막의 두께는 증착된 층들의 수에 의해 결정된다. ALD 프로세스에서는, 증착될 재료의 하나 이상의 화합물 (전구체) 의 가스 분자들이 기판 또는 웨이퍼에 공급되어 기판 상에 그 재료의 박막을 형성한다. 일 펄스 (pulse) 에서, 제 1 전구체 재료가 기판에 대한 자기제한적 (self-limiting) 프로세스에 영향받지 않고 대부분 흡착된다. 그 전구체 재료는 원하는 재료의 단일 분자층을 형성하기 위해 후속 반응물 펄스 (reactant pulse) 에서 분해될 수도 있다. 대안으로, 흡착된 전구체 재료는 화합물의 단일 분자층을 형성하기 위해 후속 반응물 펄스의 반응물과 반응할 수도 있다. 목표 두께가 획득될 때까지 성장 사이클 (growth cycle) 의 반복을 통하여 더 두꺼운 막이 생성된다.
ALD 프로세스에서, 코팅될 적어도 하나의 표면을 가진 하나 이상의 기판이 리액터 또는 증착 챔버 내로 도입된다. 그 기판은 선택된 기상 반응물의 응축 온도 (condensation temperature) 보다 높지만 열 분해 온도보다 낮은 원하는 온도로 가열된다. 일 반응물은 이전의 반응물의 흡착된 종과 반응하여 기판 표면 상에 원하는 생성물을 형성하는 것이 가능하다. 그 생성물은 막, 라이너 (liner) 또는 층의 형태일 수 있다.
ALD 프로세스 동안, 모두가 통상적으로 증기 또는 가스 형태로 존재하는 반응물 펄스들은 반응물 펄스들 사이에 제거 단계들을 가진 리액터로 순차적으로 펄싱된다. 예를 들어, 비활성 가스 펄스들이 반응물들의 펄스들 사이에 제공된다. 비활성 가스는 챔버로부터 일 반응물 펄스를, 다음 반응물 펄스 이전에 퍼지 (purge) 하여 가스상 (gas phase) 혼합 또는 CVD 타입 반응을 회피한다. ALD 의 특성화 특징은, 포화된 표면 조건에 도달할 때까지 각각의 반응물이 기판에 전달되는 것이다. 이 사이클은 원하는 두께의 원자층을 형성하기 위해 반복된다. 자기제한적 성장을 획득하기 위해, 충분한 양의 각 전구체가 기판을 포화시키기 위해 제공된다. 성장률이 자기제한적이기 때문에, 성장률은 CVD 에서와 같이 반응물의 플럭스 (flux) 보다는 반응 시퀀스의 반복률에 비례한다.
ALD 프로세싱용으로 사용되는 통상적인 반응 챔버는 상판 (top plate), 및 그 상판을 통하여 형성된 슬롯을 가진 바닥판 (bottom plate) 을 포함한다. 슬롯은 그것을 통하여 프로세스 가스가 반응 챔버 내로 도입되는 것을 허용하며, 슬롯은 가스 흐름의 프라이머리 액세스에 수직 배열된 실질적으로 선형 개구이다. 그러나, 슬롯을 통하여 반응 챔버 내로 도입된 프로세스 가스는 통상적으로 슬롯의 전체 폭을 따라 동일한 흐름 속도를 갖기 때문에, 프로세스 가스가 반응 챔버를 통하여 흐를 때, 프로세스 가스가 웨이퍼의 리딩 에지 (leading edge) 와 접촉하는데 걸리는 시간량이 반응 챔버의 폭에 걸쳐 다르다. 즉, 슬롯을 통해 반응 챔버 내로 도입되는 프로세스 가스의 속도는 슬롯의 폭에 걸쳐 실질적으로 일정하지만, 반응 챔버의 에지 근방의 반응 챔버 내로 도입되는 가스가 기판의 리딩 에지와 접촉하는데 걸리는 시간은, 도 1a 에 예시한 바와 같이, 반응 챔버의 중심선 근방의 반응 챔버 내로 도입된 가스가 기판의 리딩 에지와 접촉하는데 걸리는 시간보다 더 크다. 따라서, 반응 챔버의 중심선 근방의 기판의 리딩 에지는, 반응 챔버의 측벽에 가장 근접한 기판의 최측방향 (lateral-most) 에지가 프로세스 가스에 노출되기 이전에 더 많은 양의 프로세스 가스에 노출된다. 이는 통상적으로는, 전구체가 반응 챔버의 중심선에 더 가까운 기판의 리딩 에지에 흡착될 때 프로세스 가스 내의 전구체의 농도가 감소하기 때문에, 반응 챔버의 중심선 근방의 기판의 리딩 에지가 다수의 ALD 사이클을 통해 기판의 측방향 에지보다 더 큰 증착 두께를 갖게 한다. 기판을 통해, 그 기판의 리딩 에지로부터 트레일링 에지 (trailing edge) 로 흐르는 프로세스 가스 내의 전구체 농도의 감소 - 유사하게는, 반응 챔버의 측면 에지에 대한 종방향 (longitudinal) 중심선으로부터의 농도의 감소 - 는 기판 상에 비균일한 증착을 초래한다. 따라서, 슬롯을 통하여 반응 챔버 내로 도입된 프로세스 가스의 이상적인 체류 시간 분포 (residence time distribution; RTD) 는, 프로세스 가스가 슬롯으로부터 기판의 리딩 에지의 대응하는 위치로 이동하는데 걸리는 시간이 반응 챔버의 폭에 걸쳐 일정하도록 슬롯의 전체 폭에 걸쳐 실질적으로 동일해야 한다.
체류 시간 분포 ("RTD") 는, 도 1b 에 도시한 바와 같이, RTD 의 형상이 기판의 전체 리딩 에지에 대응하도록 최적화되어야 하는 (즉, 유체 엘리먼트가 고정된 위치에 도달하는데 걸리는 시간이 일정한) 상수 시간 (constant time) 의 컨투어 (contour) 이다. 따라서, 반응 챔버의 중심선 근방의 기판의 측방향 에지로부터 전면 (front) 에지까지, 기판의 전체 리딩 에지에 걸쳐 실질적으로 동일한 농도를 갖는 프로세스 가스의 파동이 존재한다.
따라서, 프로세스 가스를 분배하여, 분배된 프로세스 가스를 반응 챔버 내로 도입하는 것으로 인해, 그 프로세스 가스를 반응 챔버 내로 도입하는 슬롯과 기판의 리딩 에지 사이에 미리 결정된 RTD 를 초래하여, 프로세싱되는 전체 기판에 걸쳐 보다 균일한 막 증착을 생성하도록 하는 가스 전달 시스템이 필요하다.
본 발명의 일 양태에서, 반응 챔버에 적어도 하나의 프로세스 가스를 전달하는 가스 전달 시스템이 제공된다. 가스 전달 시스템은 반응 챔버와 유체 소통하고 있는 디퓨저 (diffuser) 를 포함한다. 디퓨저는 반응 챔버의 상부면 (upper surface) 에 직접 부착된다. 프로세스 가스를 분배하는 디퓨저 볼륨은 디퓨저와 반응 챔버의 상부면 사이에 규정된다.
본 발명의 다른 양태에서, 프로세스 가스의 반응 챔버 내로의 도입 이전에 적어도 하나의 프로세스 가스를 분배하는 디퓨저가 제공된다. 디퓨저는 프로세스 가스를 수신하기 위해 채널이 형성되어 있는 유입부 (inlet portion) 를 포함한다. 디퓨저는 유입부에 부착된 분배부 (distribution portion) 를 더 포함한다. 분배부는 탑재면, 제 1 분배면, 제 2 분배면, 제 3 분배면 및 제 4 분배면을 포함하며, 제 1 분배면, 제 2 분배면, 제 3 분배면 및 제 4 분배면은 제 1 측면과 제 2 측면 사이에서 측방향으로 연장된다. 제 1 측면 및 제 2 측면은 제 1 분배면, 제 2 분배면, 제 3 분배면 및 제 4 분배면과 탑재면과의 사이에서 연장된다.
본 발명의 또 다른 양태에서, 반도체 기판을 프로세싱하는 리액터가 제공된다. 리액터는 디퓨저를 포함한다. 디퓨저는 적어도 제 1 습윤면 (wetted surface) 을 갖는다. 리액터는 디퓨저에 동작적으로 접속된 반응 챔버를 더 포함한다. 반응 챔버는 디퓨저와 유체 소통하고 있으며, 반응 챔버는 적어도 제 2 습윤면을 갖는다. 리액터는 또한 제 1 습윤면, 제 2 습윤면 또는 제 3 습윤면 중 적어도 하나 상의 표면 텍스처링 (surface texturing) 을 포함한다. 표면 텍스처링은 약 50Ra 내지 250Ra 사이의 표면 거칠기를 갖는다.
본 발명의 이점은 예시에 의해 도시 및 설명된 본 발명의 실시형태들에 대한 다음의 설명으로부터 당업자에게 보다 명백해질 것이다. 인식되는 바와 같이, 본 발명은 다른 및 상이한 실시형태들이 가능하며, 본 발명의 상세는 다양한 관점에서 변경이 가능하다. 따라서, 도면(들) 및 설명은 제한이 아닌 사실상 예시인 것으로 간주될 것이다.
도 1a 는 당업계에서 통상 사용되는 반응 챔버를 통한 프로세스 가스의 체류 시간 분포의 다이어그램이다.
도 1b 는 반응 챔버를 통한 프로세스 가스의 바람직한 체류 시간 분포의 다이어그램이다.
도 2 는 가스 분배 시스템, 반응 챔버 및 배기 시스템의 일 실시형태의 상부 투시도이다.
도 3 은 도 2 에 도시된 가스 분배 시스템, 반응 챔버 및 배기 시스템의 분해도이다.
도 4 는 도 2 에 도시된 (선 4-4 를 따라 취해진) 가스 분배 시스템, 반응 챔버 및 배기 시스템의 단면도이다.
도 5a 는 디퓨저의 일 실시형태의 상부 투시도이다.
도 5b 는 도 5a 에 도시된 디퓨저의 하부 투시도이다.
도 5c 는 도 5a 에 도시된 디퓨저의 하부 평면도이다.
도 5d 는 도 5a 에 도시된 디퓨저의 후면 평면도이다.
도 5e 는 도 5c 에 도시된 (선 X-X 를 따라 취해진) 디퓨저의 단면도이다.
도 5f 는 도 5e 에 도시된 디퓨저의 일부의 확대 단면도이다.
도 6a 는 반응 챔버의 상판의 일 실시형태의 상부 투시도이다.
도 6b 는 도 6a 에 도시된 상판의 상부 평면도이다.
도 6c 는 도 6a 에 도시된 상판의 하부 평면도이다.
도 6d 는 도 6b 에 도시된 (선 F-F 를 따라 취해진) 상판의 단면도이다.
도 6e 는 도 4 에 도시된 가스 분배 시스템 및 반응 챔버의 일부의 확대 단면도이다.
도 7a 는 반응 챔버의 바닥판의 일 실시형태의 상부 투시도이다.
도 7b 는 도 7a 에 도시된 바닥판의 상부 평면도이다.
도 7c 는 도 7a 에 도시된 바닥판의 하부 평면도이다.
도 7d 는 도 7b 에 도시된 (선 D-D 를 따라 취해진) 바닥판의 단면도이다.
도 8 은 배기 심 (shim) 의 일 실시형태의 상부 평면도이다.
도 2 내지 도 4 를 참조하면, 반도체 프로세싱 툴에 사용하기 위한 리액터 (10) 의 일 예시적인 실시형태가 도시된다. 리액터 (10) 는 하우징 (12), 가스 전달 시스템 (14), 반응 챔버 (16) 및 배기 어셈블리 (18) 를 포함한다. 하우징 (12) 은 챔버를 형성하며, 그 챔버 내에서 반도체 기판이 프로세싱될 수 있다. 리액터 (10) 는 반응 챔버 (16) 내로 삽입되는 반도체 기판을 수용하도록 구성된다. 일단 반응 챔버 (16) 내로 삽입되면, 에칭 프로세스, 막 증착 프로세스, 베이킹 프로세스, 또는 당업자에게 알려져 있는 임의의 다른 프로세스를 포함하는 임의의 수의 상이한 프로세스 및 화학 반응이 기판에 대해 수행될 수 있다. 기판이 반응 챔버 (16) 내에서 프로세싱된 후에, 그 기판은 제거되고, 다른 기판이 그 후 반응 챔버 (16) 내로 삽입되어 프로세싱될 수 있다. 일 실시형태에서, 하우징 (12) 은, 프로세싱 컴포넌트가 상주하는 감압 (reduced pressure) 챔버를 제공한다. 다른 실시형태에서, 하우징 (12) 은 대기압에 또는 그 근방에 머무르는 챔버를 제공한다.
도 2 내지 도 4 를 참조하면, 가스 전달 시스템 (14), 반응 챔버 (16) 및 배기 어셈블리 (18) 의 일 예시적인 실시형태가 도시된다. 가스 전달 시스템 (14) 은 디퓨저 (22) 와 유체 소통하고 있는 믹서 (20) 에 가스를 수송하도록 구성된 복수의 가스 라인을 포함한다. 디퓨저 (22) 는, 반도체 기판이 프로세싱되는 반응 챔버 (16) 에 동작적으로 및 유체적으로 (fluidly) 접속된다. 반응 챔버 (16) 는 상판 (top plate) (24) 및 바닥판 (bottom plate) (26) 을 포함하며, 상판 (24) 및 바닥판 (26) 은 그들 내에 반응 공간 (28) 을 규정한다. 반응 공간 (28) 내로 기판 (32) 을 도입할 뿐만 아니라 그로부터 기판 (32) 을 제거하기 위해 서셉터 (susceptor) (30) 가 반응 챔버 (16) 에 대하여 상승 또는 하강되도록 구성된다. 배기 어셈블리 (18) 는 반응 챔버 (16) 에 동작적으로 및 유체적으로 접속되어 그 반응 챔버 (16) 로부터의 프로세스 가스 및 폐수를 빼낸다. 도 4 에 도시한 바와 같이, 믹서 (20), 디퓨저 (22), 반응 챔버 (16) 및 배기 어셈블리 (18) 를 통한 가스의 흐름 경로 A 가 도시된다. 특히, 믹서 (20) 및 디퓨저 (22) 를 통하여 흐르는 가스는 반응 챔버 (16) 를 통하여 흐르는 이들 가스의 방향과 실질적으로 반대 방향으로 흐른다.
도 2 및 도 3 에 도시한 바와 같이, 가스 전달 시스템 (14) 은 믹서 (20) 에 동작적으로 접속되는 복수의 가스 라인을 포함한다. 일 실시형태에서, 반응물 가스 또는 액체를 믹서 (20) 내에 도입하는 가스 라인은 제 1 반응물 가스 라인 (34), 제 2 반응물 가스 라인 (36), 제 3 반응물 가스 라인 (38) 및 제 4 반응물 가스 라인 (40) 을 포함할 수도 있다. 임의의 수의 반응물 가스 라인이 믹서 (20) 에 반응물을 전달하기 위해 그 믹서 (20) 에 동작적으로 및 유체적으로 접속될 수도 있다는 것이 당업자에 의해 이해되어야 한다. 반응물 가스 라인 (34, 36, 38, 40) 은 반응물, 이를 테면, 고체 소스로부터의 증발된 전구체, 액체 소스로부터의 증발된 전구체, 오존, 물 또는 기판의 프로세싱 시에 사용되는 임의의 다른 반응물을 수송하도록 구성된다. 반응물 가스 라인 (34, 36, 38, 40) 은 가스를 수송하도록 구성되는 것처럼 설명되지만, 가스, 증기 및/또는 액체가 마찬가지로 이들 라인을 통하여 믹서 (20) 에 수송될 수도 있다는 것이 당업자에 의해 이해되어야 한다. 또한, 가스 전달 시스템 (14) 은 제 1 바이패스 라인 (42), 제 2 바이패스 라인 (44), 제 3 바이패스 라인 (46) 및 제 4 바이패스 라인 (48) 을 포함한다. 바이패스 라인 (42, 44, 46, 48) 은 믹서 (20) 에 비활성 가스를 수송하도록 구성된다. 각 바이패스 라인 (42, 44, 46, 48) 은 대응하는 반응물 가스 라인 (34, 36, 38, 40) 에 동작적으로 접속된다. 바이패스 라인 (42, 44, 46, 48) 은 대응하는 반응물 가스 라인 (34, 36, 38, 40) 은 물론 믹서 (20) 와도 유체 소통하고 있다. 가스 전달 시스템 (14) 은 제 1 백 (back)-흡입 라인 (50), 제 2 백-흡입 라인 (52), 제 3 백-흡입 라인 (54) 및 제 4 백-흡입 라인 (56) 을 더 포함한다. 백-흡입 라인 (50, 52, 54, 56) 은 대응하는 반응물 가스 라인 (34, 36, 38, 40), 바이패스 라인 (42, 44, 46, 48) 및 배기 어셈블리 (18) 에 동작적으로 및 유체적으로 접속된다. 백-흡입 라인 (50, 52, 54, 56) 은 반응물 가스 라인 (34, 36, 38, 40) 으로부터의 반응물 가스 및/또는 바이패스 라인 (42, 44) 으로부터의 비활성 가스를, 이들 가스를 빼내고 반응 챔버 (16) 를 우회시킴으로써 배기 어셈블리 (18) 로 선택적으로 이송하도록 구성된다. 일 실시형태에서, 반응물 가스 라인 (34, 36, 38, 40), 바이패스 라인 (42, 44, 46, 48) 및 백-흡입 라인 (50, 52, 54, 56) 은 모두 티타늄으로 형성되지만, 이들 라인이 스테인리스 스틸, 또는 믹서 (20) 또는 배기 어셈블리 (18) 로 이송되는 임의의 가스 또는 유체와 반응하지 않을 임의의 다른 재료로 이루어질 수 있다는 것이 당업자에 의해 이해되어야 한다.
도 2 내지 도 4 에 도시한 바와 같이, 가스 전달 시스템 (14) 은 반응물 가스 라인 (34, 36, 38, 40) 및 바이패스 라인 (42, 44, 46, 48) 으로부터 반응물 가스 및 비활성 가스를 수신하도록 구성된 믹서 (20) 를 더 포함한다. 일 실시형태에서, 반응물 가스 라인 (34, 36, 38, 40) 은 용접을 통해 믹서 (20) 에 영구적으로 부착된다. 다른 실시형태에서, 반응물 가스 라인 (34, 36, 38, 40) 은, 가스 라인이 손상되거나 다른 경우에는 교체될 필요가 있다면, 단지 개별 가스 라인 및 대응하는 바이패스 라인 및 백-흡입 라인이 교체를 위해 믹서 (20) 로부터 분리될 수 있도록 믹서 (20) 에 착탈가능하게 고정된다. 일 실시형태에서, 믹서 (20) 는 도 4 의 단면도에 도시한 바와 같이, 바디 (58) 및 그 바디 (58) 내에 형성된 챔버 (60) 를 포함한다. 일 실시형태에서, 가스가 대향 방향으로 챔버 (60) 내로 도입될 수 있도록, 반응물 가스 라인 중 2 개의 반응물 가스 라인 (34, 36) 은 바디 (58) 의 일측에 부착되고, 2 개의 다른 반응물 가스 라인 (38, 40) 은 바디의 타측에 부착되어, 가스가 디퓨저 (22) 내로 흘러들어가기 전에 그 가스가 챔버 (60) 내에서 순환하게 한다. 믹서 (20) 는 디퓨저 (22) 에 착탈가능하게 부착되고 그 디퓨저 (22) 와 유체 소통하고 있다. 일 실시형태에서, 믹서 (20) 는 티타늄으로 형성되지만, 그 믹서는 대안으로는 스테인리스 스틸, 또는 믹서 (20) 를 통하여 디퓨저 (22) 로 이송되는 임의의 가스 또는 유체와 반응하지 않을 임의의 다른 재료로 이루어질 수 있다는 것이 당업자에 의해 이해되어야 한다.
또한, 가스 전달 시스템 (14) 은 믹서 (20) 와 유체 소통하는 디퓨저 (22) 를 포함하며, 디퓨저 (22) 는 도 4 에 도시한 바와 같이 분배된 가스 흐름을 반응 챔버 (16) 에 제공하도록 구성된다. 반응 챔버 (16) 의 상판 (24) 은 상부면 (62), 하부면 (lower surface) (64), 및 상부면 (62) 과 하부면 (64) 사이에서 연장되는 에지 (66) 를 포함한다. 디퓨저 (22) 는 반응 챔버 (16) 의 상부면 (62) 에 직접 부착되어 그들 사이에 디퓨저 볼륨 (68) 을 규정한다. 도 5a 내지 도 5f 를 참조하면, 디퓨저 (22) 의 일 예시적인 실시형태가 도시된다. 예시된 실시형태에서, 디퓨저 (22) 는 반응 챔버 (16) 의 상판 (24) 의 상부면 (62) 에 릴리즈가능하게 고정가능한 팬 (fan)-형상 부재이다. 디퓨저 (22) 는 유입부 (inlet portion) (70) 및 분배부 (distribution portion) (72) 를 포함한다. 일 실시형태에서, 유입부 (70) 및 분배부 (72) 는 일체적으로 형성된다. 다른 실시형태에서, 유입부 (70) 및 분배부 (72) 는 개별적으로 형성된 후 서로 단단하게 부착된다. 디퓨저 (22) 는 접속면 (74), 탑재면 (76), 상부면 (78), 단부면 (80) 및 상부면 (78) 으로부터 연장되는 한쌍의 융기 (boss) (82) 를 더 포함한다. 접속면 (74) 은, 디퓨저 (22) 가 믹서 (20) 에 부착될 때 그 믹서 (20) 의 바디 (58) 와 인접하도록 구성된다. 탑재면 (76) 은, 디퓨저 (22) 가 부착되는 반응 챔버 (16) 의 상판 (24) 의 상부면 (62) 과 접촉하도록 구성된다. 디퓨저 (22) 의 상부면 (78) 은 탑재면 (76) 에 대향하는 면이며, 반응 챔버 (16) 로부터 멀리 떨어져 향하게 된다. 단부면 (80) 은 탑재면 (76) 과 상부면 (78) 사이에서 연장되고, 단부면 (80) 은 유입부 (70) 에 대향하여 디퓨저 (22) 의 만곡된 단부를 형성하는 만곡면 (curved surface) 이다.
디퓨저 (22) 의 유입부 (70) 는, 도 5c 내지 도 5e 에 예시한 바와 같이, 가스가 디퓨저 (22) 의 분배부 (72) 내로 도입되기 전에 믹서 (20) 를 빠져나가는 가스에 대해 경로를 제공하도록 구성된다. 유입부 (70) 는 도 4 에 도시한 바와 같이, 믹서 (20) 의 바디 (58) 에 직접 부착되도록 구성되는 실질적으로 정방형 부재인 유입 블록 (84) 을 포함한다. 유입 블록 (84) 에는 채널 (86) 이 관통하여 형성되어 있다. 채널 (86) 은, 믹서 (20) 내로 도입된 가스가 그 믹서로부터 디퓨저 (22) 의 유입 블록 (84) 내에 형성된 채널 (86) 내로 이송되도록 믹서 (20) 의 챔버 (60) 와 직접 유체 소통하고 있다. 채널 (86) 은 믹서 (20) 와 디퓨저 (22) 의 분배부 (72) 사이에 실질적으로 선형 경로를 제공하는 것이 바람직하다. 채널 (86) 은 유입부 (70) 를 통하여 연장되는 중심축 B (도 5e) 에 대하여 대칭인 것이 바람직하다. 일 실시형태에서, 채널 (86) 은 제 1 통로 (88) 및 인접한 제 2 통로 (90) 로 형성되며, 제 1 통로 (88) 및 제 2 통로 (90) 는 연속적인 흐름 경로를 형성한다. 제 1 통로 (88) 는 제 1 유입면 (inlet surface) (92) 에 의해 규정되고, 제 2 통로 (90) 는 제 2 유입면 (94) 에 의해 규정된다.
일 실시형태에서, 유입 블록 (84) 을 통한 제 1 통로 (88) 를 규정하는 제 1 유입면 (92) 은, 도 5e 에 예시한 바와 같이, 제 1 유입면 (92) 의 직경이 제 2 통로 (90) 에 인접한 위치에서의 더 작은 직경에 비해 믹서 (20) 에 인접한 위치에서 더 크도록 실질적으로 원뿔형 형상을 갖는다. 제 1 통로 (88) 의 단면적이 믹서 (20) 를 빠져나가는 가스의 흐름 경로의 방향으로 감소하기 때문에, 이들 가스의 흐름 속도는, 그 가스가 제 1 통로 (88) 의 길이를 따라 이동함에 따라 증가한다. 다른 실시형태에서, 제 1 유입면 (92) 은 실질적으로 원통형이어서, 제 1 통로 (88) 에 대해 그 길이를 따라 실질적으로 일정한 단면을 제공한다. 제 1 유입면 (92) 은 제 1 통로 (88) 를 통한 일정한 가스 흐름 속도를 증가, 감소 또는 유지할 수도 있는 임의의 형상으로 형성될 수도 있다는 것이 당업자에 의해 이해되어야 한다.
일 실시형태에서, 유입 블록 (84) 을 통한 제 2 통로 (90) 를 규정하는 제 2 유입면 (94) 은 실질적으로 원통형이어서, 도 5e 에 도시한 바와 같이, 제 2 통로 (90) 에 대해 그 길이를 따라 실질적으로 일정한 단면을 제공한다. 제 1 유입면 (92) 이 실질적으로 원뿔형이고 제 2 유입면 (94) 이 실질적으로 원통형인 경우, 그 면들 사이의 계면은, 제 1 통로 (88) 를 통한 가스 흐름 속도가 그의 길이를 따라 계속해서 증가하는 반면, 제 2 통로 (90) 를 통한 가스 흐름 속도가 그의 길이를 따라 실질적으로 동일하게 유지되도록 하는 천이 (transition) 를 제공한다. 다른 실시형태에서, 제 2 유입면 (94) 은, 제 2 유입면 (94) 의 직경이 분배부 (72) 에 인접한 위치에서의 더 작은 직경에 비해 제 1 유입면 (92) 에 인접한 위치에서 더 크도록 실질적으로 원뿔형 형상 (미도시) 을 갖는다. 제 1 유입면 (92) 및 제 2 유입면 (94) 양자가 실질적으로 원뿔형인 경우, 이들 면은, 제 1 통로 (88) 및 제 2 통로 (90) 가 유입 블록 (84) 을 통하여 계속해서 좁아지는 통로를 제공하도록 구성될 수 있어, 그것을 통하여 흐르는 가스의 흐름 속도의 보다 점진적인 증가를 제공한다. 제 2 유입면 (94) 은 제 2 통로 (90) 를 통한 일정한 가스 흐름 속도를 증가, 감소 또는 유지할 수도 있는 임의의 형상으로 형성될 수도 있다는 것이 당업자에 의해 이해되어야 한다. 제 1 통로 (88) 에 대향하는 제 2 통로 (90) 의 단부는 디퓨저 (22) 의 분배부 (72) 로 이어진다.
프로세스 가스는 도 5c 내지 도 5e 에 도시한 바와 같이, 믹서 (20) 와 분배부 (72) 사이에 연장되는 유입부 (70) 를 통하여 형성된 채널 (86) 에 의해 분배부 (72) 내로 도입된다. 일 실시형태에서, 분배부 (72) 는 제 1 분배면 (96), 제 2 분배면 (98), 제 3 분배면 (100) 및 제 1 편향면 (102), 및 제 1 측면 (104) 및 제 2 측면 (106) 을 포함하며, 제 1 측면 (104) 및 제 2 측면 (106) 은 그들 사이에서 연장되는 제 3 측면 (108) 과 함께 디퓨저 볼륨 (68) 의 측방향 경계를 규정한다. 예시된 실시형태는 유입부 (70) 와 분배부 (72) 의 제 3 측면 (108) 사이에서 연장되는 4 개의 별개의 면을 포함하지만, 임의의 수의 별개의 면이 존재하여 그들 사이에서 연장되도록 조합될 수 있다는 것이 당업자에 의해 이해되어야 한다.
도 5c, 도 5e 및 도 5f 에 예시된 실시형태에서, 제 1 분배면 (96) 은 유입부 (70), 제 2 분배면 (98), 및 분배부 (72) 의 제 1 측면 (104) 과 제 2 측면 (106) 에 의해 경계지어진다. 일 실시형태에서, 제 1 분배면 (96) 은, 제 1 분배면 (96) 과 반응 챔버 (16) 의 상판 (24) 의 상부면 (62) 과의 사이의 거리가 유입부 (70) 로부터 분배부 (72) 의 제 3 측면 (108) 을 향하는 방향으로 감소하도록 경사져 있다 (도 5f 에서 각도 α 로서 나타내짐). 일 실시형태에서, 제 1 분배면 (96) 은 약 0°내지 10°사이 경사져 있다. 다른 실시형태에서, 제 1 분배면 (96) 은 약 3°내지 7°사이 경사져 있다. 또 다른 실시형태에서, 제 1 분배면 (96) 은 약 4°경사져 있다. 일 실시형태에서, 제 1 측면 (104) 과 제 2 측면 (106) 사이에는 제 1 분배면 (96) 의 측방향 경사가 없다. 다른 실시형태에서, 제 1 분배면 (96) 은 제 1 측면 (104) 과 제 2 측면 (106) 사이에서 임의의 방식으로 경사져 있거나 만곡될 수도 있다.
도 5c, 도 5e 및 도 5f 에 예시된 실시형태에서, 제 2 분배면 (98) 은 제 1 분배면 (96), 제 3 분배면 (100), 및 분배부 (72) 의 제 1 측면 (104) 과 제 2 측면 (106) 에 의해 경계지어진다. 일 실시형태에서, 제 2 분배면 (98) 은, 제 2 분배면 (98) 과 반응 챔버 (16) 의 상판 (24) 의 상부면 (62) 과의 사이의 거리가 제 1 분배면 (96) 으로부터 분배부 (72) 의 제 3 측면 (108) 을 향하는 방향으로 감소하도록 경사져 있다 (도 5f 에서 각도 β 로서 나타내짐). 일 실시형태에서, 제 2 분배면 (98) 은 약 5°내지 20°사이 경사져 있다. 다른 실시형태에서, 제 2 분배면 (98) 은 약 7°내지 15°사이 경사져 있다. 또 다른 실시형태에서, 제 2 분배면 (98) 은 약 10°경사져 있다. 일 실시형태에서, 제 1 측면 (104) 과 제 2 측면 (106) 사이에는 제 2 분배면 (98) 의 측방향 경사가 없다. 다른 실시형태에서, 제 2 분배면 (98) 은 제 1 측면 (104) 과 제 2 측면 (106) 사이에서 임의의 방식으로 경사져 있거나 만곡될 수도 있다.
디퓨저 볼륨 (68) 을 통하여 흐르는 프로세스 가스는 제 1 편향면 (102) 을 지나 흐르기 전에 제 3 분배면 (100) 을 지나 흐르고, 제 3 분배면 (100) 은 이하 더 상세하게 설명된다. 도 5c, 도 5e 및 도 5f 에 예시된 실시형태에서, 제 1 편향면 (102) 은 제 3 분배면 (100), 및 분배부 (72) 의 제 1 측면 (104), 제 2 측면 (106) 및 제 3 측면 (108) 에 의해 경계지어진다. 일 실시형태에서, 제 1 편향면 (102) 은, 제 1 편향면 (102) 과 반응 챔버 (16) 의 상판 (24) 의 상부면 (62) 과의 사이의 거리가 제 3 분배면 (100) 으로부터 분배부 (72) 의 제 3 측면 (108) 을 향하는 방향으로 감소하도록 경사져 있다 (도 5f 에서 각도 θ 로서 나타내짐). 일 실시형태에서, 제 1 편향면 (102) 은 약 10°내지 35°사이 경사져 있다. 다른 실시형태에서, 제 1 편향면 (102) 은 약 20°내지 30°사이 경사져 있다. 또 다른 실시형태에서, 제 1 편향면 (102) 은 약 26°경사져 있다. 제 1 분배면 (96), 제 2 분배면 (98) 및 제 1 편향면 (102) 은 유입부 (70) 로부터 분배부 (72) 의 제 3 측면 (108) 을 향하는 종방향이나 제 1 측면 (104) 으로부터 제 2 측면 (106) 으로의 측방향 중 어느 하나의 방향으로 임의의 각도로 경사져 있을 수 있다는 것이 당업자에 의해 이해되어야 한다. 일 실시형태에서, 제 1 측면 (104) 과 제 2 측면 (106) 사이에는 제 1 편향면 (102) 의 측방향 경사가 없다. 다른 실시형태에서, 제 1 편향면 (102) 은 제 1 측면 (104) 과 제 2 측면 (106) 사이에서 임의의 방식으로 경사져 있거나 만곡될 수도 있다.
도 5c, 도 5e 및 도 5f 에 예시된 실시형태에서, 제 3 분배면 (100) 은 제 2 분배면 (98), 제 1 편향면 (102), 및 분배부 (72) 의 제 1 측면 (104) 과 제 2 측면 (106) 에 의해 경계지어진다. 일 실시형태에서, 제 3 분배면 (100) 은, 상기 설명한 바와 같이, 제 1 분배면 (96) 및 제 2 분배면 (98) 이 종방향으로 경사져 있는 경우 측방향으로 경사져 있다. 제 3 분배면 (100) 은 디퓨저 (22) 의 종축 (도 5c) 을 따라 정렬된 중심선 (110) 에 대해 대칭이다. 디퓨저 (22) 가 반응 챔버 (16) 의 상판 (24) 에 부착될 때, 제 3 분배면 (100) 의 중심선 (110) 과 상판 (24) 의 상부면 (62) 과의 사이의 거리는 일 실시형태에 있어서는 약 1.0mm 내지 3.0mm 사이이다. 다른 실시형태에서, 제 3 분배면 (100) 의 중심선 (110) 과 상판 (24) 의 상부면 (62) 과의 사이의 거리는 약 2.0mm 내지 2.5mm 사이이다. 다른 실시형태에서, 제 3 분배면 (100) 의 중심선 (110) 과 상판 (24) 의 상부면 (62) 과의 사이의 거리는 약 2.24mm 이다. 제 3 분배면 (100) 은, 제 1 측면 (104) 및 제 2 측면 (106) 에 바로 인접한 제 3 분배면 (100) 이 제 3 분배면 (100) 의 중심선 (110) 과 상판 (24) 의 상부면 (62) 과의 사이의 거리에 비해 상판 (24) 의 상부면 (62) 으로부터 더욱 이격되도록 측방향으로 경사져 있다. 일 실시형태에서, 제 1 측면 (104) 및 제 2 측면 (106) 에 바로 인접한 제 3 분배면 (100) 과 상판 (24) 의 상부면 (62) 과의 사이의 거리는 약 3.0mm 내지 5.0mm 사이이다. 다른 실시형태에서, 제 1 측면 (104) 및 제 2 측면 (106) 에 바로 인접한 제 3 분배면 (100) 과 상판 (24) 의 상부면 (62) 과의 사이의 거리는 약 3.5mm 내지 4.8mm 사이이다. 또 다른 실시형태에서, 제 1 측면 (104) 및 제 2 측면 (106) 에 바로 인접한 제 3 분배면 (100) 과 상판 (24) 의 상부면 (62) 과의 사이의 거리는 약 4.0mm 이다. 중심선 (110) 과 대향하는 제 1 측면 (104) 및 제 2 측면 (106) 과의 사이의 제 3 분배면 (100) 의 측방향 경사는, 제 3 분배면 (100) 이 상판 (24) 의 상부면 (62) 으로부터 이격되는 거리가 중심선 (110) 과 제 1 측면 (104) 및 제 2 측면 (106) 과의 사이에서 비선형이 되도록 만곡될 수도 있고, 또는 연속 경사일 수도 있다.
제 3 분배면 (100) 은, 프로세스 가스가 디퓨저 볼륨 (68) 을 통하여 믹서 (20) 로부터 반응 챔버 (16) 로 흐를 때 그 프로세스 가스에 대한 제 1 가스 흐름 제한의 역할을 한다. 제 1 분배면 (96) 및 제 2 분배면 (98) 은 제 1 측면 (104) 과 제 2 측면 (106) 사이의 연속적으로 증가하는 측방향 폭뿐만 아니라 제 1 분배면 (96) 및 제 2 분배면 (98) 과 상판 (24) 의 상부면과의 사이의 연속적으로 감소하는 높이를 제공하지만, 제 3 분배면 (100) 은 특히, 프로세스 가스가 제 1 편향면 (102) 과 접촉하고 반응 챔버 (16) 로 나아가게 되기 이전에 제 1 측면 (104) 과 제 2 측면 (106) 사이에서 프로세스 가스가 측방향으로 분배되게 하도록 형상화된다. 프로세스 가스를 측방향으로 분배하는 것에 더하여, 제 3 분배면 (100) 은 또한 프로세스 가스의 상대적인 가스 흐름 속도를 디퓨저 볼륨 (68) 의 폭에 걸쳐 변경한다. 특히, 예시된 실시형태의 제 3 분배면 (100) 은 중심선 (110) 에 대한 측방향으로의 가스의 흐름에 점진적으로 더 적은 제한을 제공하면서 디퓨저 (22) 의 중심축 근방의 가스 흐름 속도를 저감시키기 위하여 중심선 (110) 근방의 가스의 흐름을 제한한다. 따라서, 제 1 측면 (104) 및 제 2 측면 (106) 에 인접한 제 1 편향면 (102) 과 접촉하는 프로세스 가스의 흐름 속도는 중심선 (110) 에 인접한 제 1 편향면 (102) 과 접촉하는 프로세스 가스의 흐름 속도보다 더 크다. 따라서, 디퓨저 (22) 로부터 반응 챔버 (16) 내로 흘러들어가는 프로세스 가스의 속도는 제 1 편향면 (102) 의 폭에 걸쳐 변한다. 제 3 분배면 (100) 의 형상은 그의 폭에 걸쳐 미리 결정된 가스 흐름 속도 분포를 제공하기 위해 임의의 방식으로 형상화되거나 또는 경사져 있을 수 있으며, 이하 더 상세하게 설명되는 바와 같이, 결과의 가스 흐름 속도 분배는 대응하는 체류 시간 분포를 야기한다는 것이 당업자에 의해 이해되어야 한다. 유입부 (70) 와 제 3 측면 (108) 사이의 방향으로 연장되는 임의의 면은 디퓨저 (22) 의 폭에 걸쳐 상대적인 가스 흐름 속도를 제어하는 제 1 흐름 제한을 제공할 수 있다는 것이 당업자에 의해 이해되어야 한다.
일 실시형태에서, 디퓨저 (22) 는 도 5b 및 도 5c 에 예시한 바와 같이, 제 1 천이면 (transition surface) (112) 및 제 2 천이면 (114) 을 더 포함한다. 제 1 천이면 (112) 및 제 2 천이면 (114) 은 디퓨저 (22) 의 분배부 (72) 의 수직으로 배향된 면과 측방향으로 배향된 면 사이에 천이를 제공하는 만곡면이다. 제 1 천이면 (112) 은 실질적으로 수직으로 배향된 제 1 측면 (104) 과 실질적으로 측방향으로 배향된 제 1 분배면 (96), 제 2 분배면 (98), 제 3 분배면 (100) 및 제 1 편향면 (102) 과의 사이에 천이를 제공한다. 제 2 천이면 (114) 은 실질적으로 수직으로 배향된 제 2 측면 (106) 과 실질적으로 측방향으로 배향된 제 1 분배면 (96), 제 2 분배면 (98), 제 3 분배면 (100) 및 제 1 편향면 (102) 과의 사이에 천이를 제공한다. 다른 실시형태에서, 수직으로 배향된 제 1 측면 (104) 및 제 2 측면 (106) 은 측방향으로 배향된 제 1 분배면 (96), 제 2 분배면 (98), 제 3 분배면 (100) 및 제 1 편향면 (102) 과 직접 천이하여 중간 천이면 없이 그들 사이에 각도를 이룬다.
일 실시형태에서, 디퓨저 (22) 의 분배부 (72) 의 제 1 측면 (104) 및 제 2 측면 (106) 은 각각 다중 섹션으로 형성되며, 각 인접한 섹션은 도 5c 에 도시한 바와 같이, 디퓨저 (22) 의 중심선 (110) 에 대하여 측방향으로 상이한 곡률을 갖는다. 제 1 측면 (104) 및 제 2 측면 (106) 의 측방향에서의 형상은, 프로세스 가스가 제 1 측면 (104) 및 제 2 측면 (106) 과 접촉할 때 이들 프로세스 가스의 재순환을 감소 또는 제거하기 위하여 최적화될 수 있다. 다른 실시형태에서, 제 1 측면 (104) 및 제 2 측면 (106) 의 유입부 (70) 와 제 3 측면 (108) 사이의 형상은 그들 사이에서 일관된 곡률을 갖는다.
프로세스 가스가 디퓨저 (22) 를 통과한 후에, 프로세스 가스는 도 4 및 도 6a 내지 도 6d 에 도시한 바와 같이, 상판 (24) 을 통하여 반응 챔버 (16) 내로 도입된다. 상판 (24) 은 상부면 (62), 하부면 (64) 및 상부면 (62) 과 하부면 (64) 사이에서 연장되는 에지 (66) 를 포함한다. 하부면 (64) 은 도 6c 에 도시한 바와 같이, 실질적으로 평평한 면이다. 상부면 (62) 은 그로부터 연장되는 한쌍의 상승 융기 (120) 를 포함한다. 상부면 (62) 은 상부면 (62) 으로부터 상판 (24) 의 두께 안으로 연장되는 리세스된 영역 (122) 을 더 포함한다. 리세스된 영역 (122) 은, 도 4 에 도시한 바와 같이, 디퓨저 (22) 가 상판 (24) 에 부착될 때 디퓨저 (22) 의 유입부 (70) 를 수용하도록 구성된다. 리세스된 영역 (122) 의 깊이는 유입부 (70) 가 그 안에 배치되는 것을 허용하도록 사이징 및 형상화되어야 한다.
도 4 및 도 6a 내지 도 6d 에 도시한 바와 같이, 상판 (24) 은 상승면 (raised surface) (124) 을 더 포함한다. 상승면 (124) 은 디퓨저 (22) 의 분배부 (72) 에 실질적으로 대응하도록 형상화된다. 따라서, 디퓨저 (22) 가 상판 (24) 의 상부면 (62) 에 직접 부착될 때, 디퓨저 (22) 의 탑재면 (76) 은 상판 (24) 의 상승면 (124) 과 실질적으로 정렬된다. 상승면 (124) 은, 전체 탑재면 (76) 이 상판 (24) 과 인접 관계에 있는 것을 보장하기 위해 디퓨저 (22) 의 탑재면 (76) 의 윤곽보다 약간 더 크게 사이징될 수도 있다는 것이 당업자에 의해 이해되어야 한다. 디퓨저 볼륨 (68) (도 4) 은 상판 (24) 의 상승면 (124) 과 제 1 분배면 (96), 제 2 분배면 (98) 및 제 3 분배면 (100), 제 1 편향면 (102), 제 1 측면 (104), 제 2 측면 (106) 및 제 3 측면 (108), 및 디퓨저 (22) 의 제 1 천이면 (112) 및 제 2 천이면 (114) 과의 사이에 규정된다.
도 4 및 도 6a 내지 도 6e 에 도시한 바와 같이, 상판 (24) 은 그의 두께를 통하여 형성된 유입 슬롯 (126) 을 더 포함한다. 일 실시형태에서, 유입 슬롯 (126) 은 디퓨저 (22) 의 제 3 측면 (108) 에 실질적으로 대응하는 만곡된 슬롯으로서 형성된다. 일 실시형태에서, 유입 슬롯 (126) 의 형상은 일반적으로, 프로세스 가스가 유입 슬롯 (126) 과 기판 (32) 의 리딩 에지 사이에서 흘러야 하는 거리를 감소시키기 위해, 그리고 또한 가스가 유입 슬롯 (126) 과 기판 (32) 의 리딩 에지 사이에서 이동해야 하는 거리가 유입 슬롯 (126) 의 전체 폭에 걸쳐 실질적으로 동일하도록 기판 (32) 의 리딩 에지에 대응한다. 유입 슬롯 (126) 의 형상은 유입 슬롯 (126) 과 기판 (32) (도 4) 의 리딩 에지 사이에 프로세스 가스의 미리 결정된 체류 시간 분포를 제공하기 위해 제 3 분배면 (100) 의 형상과 조합하여 최적화될 수 있다. 다른 실시형태에서, 유입 슬롯 (126) 은 실질적으로 선형이다. 유입 슬롯 (126) 은 실질적으로 선형, 만곡, 또는 임의의 다른 형상일 수 있으며, 만곡된 유입 슬롯 (126) 은 반응 공간 (28) 내에 미리 결정된 체류 시간 분포를 제공하기에 충분한 임의의 곡률 반경을 가질 수 있다는 것이 당업자에 의해 이해되어야 한다. 유입 슬롯 (126) 은, 프로세스 가스가 디퓨저 (22) 로부터 반응 공간 (28) 으로 흐를 때 그 프로세스 가스에 추가적인 흐름 제한을 제공하지 않도록 사이징 및 형상화되어야 한다.
도 4, 및 도 6d 및 도 6e 에 도시한 바와 같이, 상판 (24) 의 두께를 통하여 형성된 유입 슬롯 (126) 은 외측면 (outer surface) (128), 내측면 (inner surface) (130), 제 1 각진면 (angled surface) (132), 제 2 각진면 (133), 및 외측면 (128) 과 내측면 (130) 및 각진면 (132, 133) 과의 사이에 천이를 제공하는 한쌍의 코너면 (134) 에 의해 규정된다. 일 실시형태에서, 외측면 (128) 및 내측면 (130) 은, 이들 면 사이의 거리가 유입 슬롯 (126) 의 전체 길이를 따라 실질적으로 동일하도록 실질적으로 동심 (concentric) 이다. 일 실시형태에서, 외측면 (128) 및 내측면 (130) 은 디퓨저 볼륨 (68) 과 반응 공간 (28) 사이에 실질적으로 수직 통로를 제공하기 위해 실질적으로 수직 방식으로 배향된다. 일 실시형태에서, 유입 슬롯 (126) 은 제 1 각진면 (132) 및 제 2 각진면 (133) 없이 단지 외측면 (128) 및 내측면 (130) 만을 가지고 형성된다. 예시된 실시형태에서, 제 1 각진면 (132) 은 상판 (24) 의 상부면 (62) 으로부터 하향으로 연장된다. 제 1 각진면 (132) 은, 디퓨저 볼륨 (68) 을 빠져나가 유입 슬롯 (126) 으로 가는 프로세스 가스가 직각 (right angle) 으로 이동하지 않도록 천이면을 제공한다. 대신에, 제 1 각진면 (132) 은 가스의 흐름이 실질적으로 수평 흐름 방향으로부터 실질적으로 수직 흐름 방향으로 천천히 천이하는 것을 허용하여, 프로세스 가스의 흐름을 인트레인 (intrain) 하고 이들 국부화된 영역에서 화학적 기상 증착 성장 모드를 야기할 수 있는 재순환, 난류 맴돌이 (turbulent eddy) 또는 소용돌이 (vortex) 를 만들어 낼 수 있는 갑작스런 천이를 회피한다.
내측면 (130) 은 제 1 각진면 (132) 과 제 2 각진면 사이에서 실질적으로 수직 방식으로 연장된다. 도 4, 및 도 6d 및 도 6e 에 도시된 실시형태에서, 제 2 각진면 (133) 은 비스듬히 상판 (24) 의 하부면 (64) 으로부터 상향으로 연장된다. 제 2 각진면 (133) 은, 유입 슬롯 (126) 을 빠져나가 반응 공간 (28) 으로 가는 가스가 상기 언급된 난류 문제를 야기할 수도 있는 직각으로 이동하지 않도록 천이면을 제공한다. 대신에, 제 2 각진면 (133) 은 가스의 흐름이 실질적으로 수직 흐름 방향으로부터 실질적으로 수평 흐름 방향으로 천천이 천이하는 것을 허용한다. 제 1 각진면 (132) 및 제 2 각진면 (133) 은 유입 슬롯 (126) 내의 재순환 또는 난류의 가능성을 저감시킨다. 제 1 각진면 (132) 및 제 2 각진면 (133) 은 상판 (24) 의 상부면 (62) 및 하부면 (64) 에 대하여 임의의 각도로 형성될 수 있다는 것이 당업자에 의해 이해되어야 한다.
동작 시에, 프로세스 가스는, 그 가스의 흐름이 제 3 분배면 (100) 과 상판 (24) 의 상부면 (62) 사이에서 제한되는 디퓨저 (22) 를 통하여 흐르며, 프로세스 가스는 그 후 유입 슬롯 (126) 을 통하여 반응 챔버 (16) 내로 도입된다. 제 3 분배면 (100) 은 디퓨저 (22) 의 폭에 걸쳐 그의 중심선 (110) 에 대하여 프로세스 가스의 가스 흐름 속도를 변경하도록 구성된다. 따라서, 프로세스 가스가 유입 슬롯 (126) 에 진입할 때, 유입 슬롯 (126) 의 폭에 걸친 프로세스 가스의 가스 흐름 속도도 마찬가지로 변한다. 일 실시형태에서, 유입 슬롯 (126) 의 형상과 조합하여 변하게 되는 가스 흐름 속도는, 프로세스 가스의 파동이 도 1b 에 도시한 바와 같이 기판의 리딩 에지의 형상에 실질적으로 대응하도록 형상화된 체류 시간 분포를 야기한다. 프로세스 가스의 체류 시간은, 유체 엘리먼트가 소정의 거리를 이동하는데 걸리는 시간이다. 체류 시간 분포는 소정 폭에 걸친 일정한 체류 시간의 컨투어이다. 따라서, 도 1b 는, 프로세스 가스가 유입 슬롯 (126) 으로부터 기판의 리딩 에지로 흐르는데 걸리는 시간이 반응 챔버 (16) 의 폭에 걸쳐 일정하도록 체류 시간 분포의 형상이 기판의 리딩 에지와 밀접하게 대응하는 일 예시적인 체류 시간 분포를 예시한다. 체류 시간 분포의 예시된 형상은 반응 챔버의 중심선 근방의 더 낮은 가스 흐름 속도에 대하여 반응 챔버의 대향하는 측면 에지 근방의 더 높은 가스 흐름 속도로 유입 슬롯 (126) 을 빠져나가는 가스 흐름 속도의 결과이다. 유입 슬롯 (126) 과 기판의 리딩 에지 사이의 전체 거리는 반응 챔버의 폭에 걸쳐 거의 동일하지만, 반응 공간 (28) 내의 유체 역학 (fluide dynamics) 은 이러한 형상화된 체류 시간 분포를 야기하기 위해 이러한 미리 결정된 가스 흐름 속도 분포를 요구한다. 도 1b 는 디퓨저 (22) 의 제 3 분배면 (100) 에 의해 야기되는 가스 흐름에 대한 제한으로부터 발생하는 체류 시간 분포의 단지 일 예시적인 실시형태를 예시하지만, 제 3 분배면 (100) - 또는 가스 흐름 제한을 제공하도록 구성된 디퓨저의 임의의 다른 면 - 이 미리 결정된 체류 시간 분포를 야기하도록 변경될 수 있다는 것이 당업자에 의해 이해되어야 한다. 다른 실시형태에서, 제 3 분배면 (100) 은, 유입 슬롯 (126) 의 폭에 걸친 결과의 가스 흐름 속도 분포가 "센터 헤비 (center heavy)" 인 - 또는, 즉 체류 시간 분포의 형상이 기판의 트레일링 에지의 형상에 대응하는 - 실질적으로 평탄한 형상을 갖는 체류 시간 분포를 야기하도록 형상화된다.
상판 (24) 은 도 4 에 도시한 바와 같이, 상판 (24) 과 바닥판 (26) 사이에 형성된 반응 공간 (28) 과 함께 반응 챔버 (16) 를 형성하기 위해 바닥판 (26) 에 부착된다. 도 7a 내지 도 7c 에 예시한 바와 같이, 바닥판 (26) 은 상부면 (136), 하부면 (138), 및 상부면 (136) 과 하부면 (138) 사이에서 연장되는 에지 (140) 를 갖는 실질적으로 평탄한 부재이다. 바닥판 (26) 은 리세스면 (144), 제 1 측면 에지 (146), 제 2 측면 에지 (148), 제 3 측면 에지 (150) 및 제 2 편향면 (152) 으로 형성된 리세스된 영역 (142) 을 포함하며, 제 1 측면 에지 (146), 제 2 측면 에지 (148), 제 3 측면 에지 (150) 및 제 2 편향면 (152) 은 리세스면 (144) 과 바닥판 (26) 의 상부면 (136) 사이에서 연장된다. 일 실시형태에서, 제 1 측면 에지 (146), 제 2 측면 에지 (148) 및 제 3 측면 에지 (150) 는 상부면 (136) 과 리세스면 (144) 사이에서 실질적으로 선형 방식으로 연장되며, 측면 에지 (146, 148, 150) 와 리세스면 (144) 사이의 천이는 일반적으로 직각으로 존재한다. 다른 실시형태에서, 제 1 측면 에지 (146), 제 2 측면 에지 (148) 및 제 3 측면 에지 (150) 는 상부면 (136) 으로부터 일반적으로 수직 방식으로 연장되지만, 측면 에지 (146, 148, 150) 와 리세스면 (144) 사이의 천이를 위해 약간의 곡률 반경을 포함할 수도 있다. 제 1 측면 에지 (146), 제 2 측면 에지 (148) 및 제 3 측면 에지 (150) 는 상부면 (136) 과 바닥판 (26) 의 리세스면 (144) 사이에서 연장될 때 임의의 방식으로 배향될 수 있다는 것이 당업자에 의해 이해되어야 한다.
제 2 편향면 (152) 은 도 4, 도 7b 및 도 7d 에 예시한 바와 같이, 상부면 (136) 과 바닥판 (26) 의 리세스면 (144) 사이에서 연장된다. 제 2 편향면 (152) 은 측방향 및 수직 방향 양자로 만곡된다. 일 실시형태에서, 제 2 편향면 (152) 은 바닥판 (26) 의 종방향 중심선에 대해 측방향으로 아킹 (arc) 되며, 제 2 편향면 (152) 의 아킹된 형상은 상판 (24) 을 통하여 형성된 유입 슬롯 (126) 의 아킹된 형상에 실질적으로 대응한다. 제 2 편향면 (152) 의 측방향에서의 곡률 반경은 상판 (24) 을 통하여 형성된 유입 슬롯 (126) 의 곡률 반경은 물론 디퓨저 (22) 의 제 1 편향면 (102) 의 곡률 반경에 대응해야 한다는 것이 당업자에 의해 이해되어야 한다. 일 실시형태에서, 제 2 편향면 (152) 은 리세스된 영역 (142) 의 제 1 측면 에지 (146) 와 제 3 측면 에지 (150) 사이에서 연장되는 만곡면이다. 제 2 편향면 (152) 은 바닥판 (26) 의 상부면 (136) 과 리세스면 (144) 사이에 만곡면을 제공하여, 프로세스 가스를 유입 슬롯 (126) 을 통한 실질적으로 수직 흐름 방향으로부터 반응 공간 (28) 을 통한 실질적으로 수평 흐름 방향으로 다시 보낸다. 상부면 (136) 과 리세스면 (144) 사이의 제 2 편향면 (152) 의 전체 길이 및 곡률 반경이 프로세스 가스의 상당한 양의 난류 또는 재순환 없이 그 프로세스 가스가 흐름 방향을 바꾸기에 충분한 임의의 길이 또는 각도일 수도 있다는 것이 당업자에 의해 이해되어야 한다.
또한 도 7a 내지 도 7d 에 도시한 바와 같이, 바닥판 (26) 은 그것을 통하여 형성된 애퍼처 (aperture) (154) 를 포함한다. 애퍼처 (154) 는 리세스면 (144) 과 바닥판 (26) 의 하부면 (138) 사이에서 연장된다. 애퍼처 (154) 는 프로세싱될 기판 (32) 을 반응 챔버 (16) 내에 운반하는 서셉터 (30) (도 4) 를 수용하도록 구성된다. 동작 시에, 서셉터 (30) 는 물러나게 되거나, 또는 하우징 (12) 내로 삽입되는 기판 (32) 을 수용하기 위해 하강된다. 일단 기판 (32) 이 서셉터 (30) 상에 놓이게 되면, 서셉터 (30) 는, 서셉터 (30) 가 바닥판 (26) 근방에 또는 바닥판 (26) 과 접촉하여 위치되는 프로세싱 위치까지 애퍼처 (154) 안으로 상승된다. 기판 (32) 이 프로세싱된 후에, 서셉터 (30) 는 애퍼처 (154) 로부터 멀리 떨어져 하강되고, 그 사이클은 다른 기판 (32) 에 반복된다.
프로세스 가스는 바닥판 (26) 의 제 2 편향면 (152) 에 인접한 유입 슬롯 (126) 을 통하여 반응 공간 (28) 내로 도입되고, 도 4 및 도 7a 내지 도 7d 에 도시한 바와 같이, 바닥판 (28) 의 리세스된 영역 (142) 의 제 2 측면 에지 (148) 에 인접하게 형성된 배기 슬롯 (156) 을 통하여 반응 공간 (28) 을 빠져나간다. 배기 슬롯 (156) 은 리세스면 (144) 과 바닥판 (26) 의 하부면 (138) 사이에서 연장되는 긴 슬롯 (elongated slot) 이다. 일 실시형태에서, 배기 슬롯 (156) 은 리세스된 영역 (142) 의 제 1 측면 에지 (146) 와 제 3 측면 에지 (150) 사이에서 전체 거리를 측방향으로 연장한다. 다른 실시형태에서, 배기 슬롯 (156) 은 제 1 측면 에지 (146) 와 제 3 측면 에지 (150) 사이의 거리의 일부만을 측방향으로 연장한다. 일 실시형태에서, 배기 슬롯 (156) 은 바닥판 (26) 의 종축에 대해 대칭이다. 배기 슬롯 (156) 이 프로세스 가스가 상판 (24) 과 바닥판 (26) 사이의 반응 공간 (28) 을 빠져나가는 것을 허용하기에 충분한 임의의 길이 또는 폭을 가질 수 있다는 것이 당업자에 의해 이해되어야 한다. 배기 슬롯 (156) 은 그것을 통한 가스의 흐름에 대한 제한을 제공하지 않도록 구성되어야 하지만, 가스 전달 시스템 (14) 이 배기 어셈블리 (18) 를 통하여 컨덕턴스 프로파일을 튜닝함으로써 기판의 리딩 에지에서의 체류 시간 분포를 전체 제어하게 도울 수 있다. 프로세스 가스는 배기 슬롯 (156) 을 통하여 반응 챔버 (16) 를 빠져나가며, 그 후 배기 어셈블리 (18) 에서 수신된다.
도 2 내지 도 4 에 예시된 실시형태에서, 배기 어셈블리 (18) 는 반응 챔버 (16) 의 바닥판 (26) 에 동작적으로 접속된다. 일 실시형태에서, 배기 어셈블리 (18) 는 배기 심 (exhaust shim) (158), 배기 론더 (exhaust launder) (160), 배기 론더 (160) 로부터 하우징 (12) 밖으로 프로세스 가스 및 폐수를 수송하는 배관 (piping) 을 포함한다. 어셈블링 시에, 배기 심 (158) 은 배기 론더 (160) 와 바닥판 (26) 의 하부면 (138) 사이에 배치되며, 배기 어셈블리 (18) 는 반응 챔버 (16) 에 직접 부착된다.
도 8 에 도시한 바와 같이, 배기 심 (158) 은 그것을 통하여 형성된 긴 제한 슬롯 (162) 을 포함한다. 배기 심 (158) 은 프로세스 가스의 흐름에 제 2 제한을 제공한다. 일 실시형태에서, 제한 슬롯 (162) 의 길이는 바닥판 (26) 을 통하여 형성된 배기 슬롯 (156) 의 길이에 실질적으로 대응한다. 제한 슬롯 (162) 은, 슬롯이 보타이 (bow-tie) 형상이 되도록 형성된다. 즉, 제한 슬롯 (162) 의 폭이 제한 슬롯 (162) 의 중심점 (166) 에서의 더 좁은 폭에 비해 제한 슬롯 (162) 의 대향 단부 (164) 에서 더 크다. 배기 슬롯 (156) 의 폭에 따른 프로세스 가스의 실질적으로 일관된 흐름 속도를 고려해 볼 때, 제한 슬롯 (162) 의 형상은 제한 슬롯 (162) 의 단부 (164) 근방의 프로세스 가스에 대한 더 적은 흐름 제한에 비해 제한 슬롯 (162) 의 중심점 (166) 을 통한 프로세스 가스에 대한 증가된 흐름 제한을 제공한다. 따라서, 제한 슬롯 (162) 의 중심점 (166) 근방의 가스 흐름 속도는, 배기 심 (158) 을 빠져나올 때 제한 슬롯 (162) 의 단부 (164) 근방의 가스 흐름 속도보다 더 작다. 그 결과, 디퓨저 (22) 의 제 3 분배면 (100) 에 의해 야기된 가스 흐름 제한과 조합한 이 제 2 가스 흐름 제한은, 프로세싱되는 기판 (32) 의 전체 리딩 에지의 형상에 밀접하게 대응하는 반응 챔버 (16) 를 통한 체류 시간 분포를 초래한다.
상판 (24) 및 바닥판 (26) 이 반응 챔버 (16) 를 형성하기 위해 어셈블링될 때, 도 4 에 예시한 바와 같이, 반응 공간 (28) 은 바닥판 (26) 의 리세스된 영역 (142), 서셉터 (30), 및 상판 (24) 의 하부면 (64) 사이에 규정된다. 반응 공간 (28) 은, 프로세스 가스가 유입 슬롯 (126) 과 배기 슬롯 (156) 사이에서 이동할 수 있는 볼륨을 제공한다. 반응 공간 (28) 내에서, 프로세스 가스는 기판 (32) 상에 재료의 층을 증착시키기 위해 기판 (32) 과 접촉한다. 폐수 - 또는 기판의 표면 상의 화학 반응의 부산물 - 및 임의의 미반응 프로세스 가스는 배기 슬롯 (156) 을 통하여 반응 챔버 (16) 로부터 빼내진다.
도 6e 에 도시한 바와 같이, 디퓨저 (22) 가 어셈블링된 반응 챔버 (16) 에 부착될 때, 유입 슬롯 (126) 의 외측면 (128) 과 상판 (24) 의 상부면 (62) 의 접합부 (junction) 에 형성된 에지는 디퓨저 (22) 의 탑재면 (76) 에 바로 인접하게 위치된다. 그 결과, 제 3 측면 (108) 과 디퓨저 (22) 의 탑재면 (76) 의 접합부에 형성된 에지는, 디퓨저 (22) 의 에지가 유입 슬롯 (126) 의 대응하는 에지와 정렬되지 않도록 상판 (24) 에 형성된 유입 슬롯 (126) 을 규정하는 갭 내에 위치된다.
유사하게, 상판 (24) 이 반응 챔버 (16) 를 형성하기 위해 바닥판 (26) 에 부착될 때, 제 2 편향면 (152) 과 바닥판 (26) 의 상부면 (136) 사이에 형성된 리세스된 영역 (142) 의 에지는, 유입 슬롯 (126) 에 인접하게 위치된 리세스된 영역 (142) 의 에지가 상판 (24) 의 하부면 (64) 과 접촉하도록 상판 (24) 의 유입 슬롯 (126) 의 외측면 (128) 을 단지 약간만 너머 위치된다. 그 결과, 외측면 (128) 과 상판 (24) 의 하부면 (64) 의 접합부에 의해 형성된 에지는 바닥판 (26) 의 리세스된 영역 (142) 보다 위에 위치된다. 따라서, 디퓨저 (22) 의 에지는 유입 슬롯 (126) 의 대응하는 에지에 대하여 약간 오프셋되며, 유입 슬롯 (126) 의 에지는 바닥판의 리세스된 영역 (142) 의 대응하는 에지에 대하여 약간 오프셋된다. 이들 오프셋 에지는, 프로세스 가스가 디퓨저 볼륨 (68) 으로부터 유입 슬롯 (126) 내지 반응 공간 (28) 으로 천이할 때 캐스케이딩 흐름 효과를 제공하며, 가스의 흐름은 흐름 방향에 있어서 일반적으로 u-턴 변화를 실시한다. 캐스케이딩 흐름 효과는, 다르게는 디퓨저 (22), 상판 (24) 및 바닥판 (26) 의 대응하는 에지가 적절히 정렬되지 않는 경우에 발생할 수도 있는 프로세스 가스의 재순환을 감소 또는 제거한다. 유입 슬롯 (126) 이 가스 흐름 제한의 역할을 하지 않도록 제 1 가스 흐름 제한이 유입 슬롯 (126) 으로부터 상류로 이동되기 때문에, 디퓨저 (22) 및 반응 챔버 (16) 의 분해가 단순화된다. 그 결과, 분해의 용이함은 디퓨저 (22) 및 반응 챔버 (16) 의 표면에 표면 텍스처링을 세정 또는 부가하기 위해 보다 직접적인 가시선 (direct line-of-sight) 을 허용한다.
일 실시형태에서, 가스 라인을 포함하는 전체 가스 전달 시스템 (14), 믹서 (20) 및 디퓨저 (22) 는 물론 반응 챔버의 상판 (24) 및 바닥판 (26) 은 스테인리스 스틸로 형성된다. 가스 라인, 믹서 및/또는 디퓨저 (22) 가 또한 티타늄, 알루미늄, 합금, 또는 기판 프로세싱 시에 사용되는 프로세스 가스에 대하여 비활성인 임의의 재료로 형성될 수도 있다는 것이 당업자에 의해 이해되어야 한다. 믹서 (20), 디퓨저 (22), 상판 (24) 및 바닥판 (26) 모두는 가스 라인으로부터 배기 어셈블리 (18) 로 흐르는 프로세스 가스에 의해 접촉되는 면을 포함한다. 프로세스 가스와 접촉하는 각각의 면은 습윤면이며, 이는 프로세스 가스가 전체 시스템을 통하여 흐를 때 그 프로세스 가스에 전체 면의 적어도 일부가 노출된다는 것을 의미한다. 믹서 (20) 에 대하여, 챔버 (60) 를 규정하는 면은 프로세스 가스와 접촉하기 때문에 습윤면이다. 디퓨저 (22) 에 대하여, 유입부 (70) 를 통하여 채널 (86) 을 형성하는 제 1 유입면 (92) 및 제 2 유입면 (94) 은 습윤면이다. 추가로, 디퓨저 볼륨 (68) 을 규정하는 각각의 면은 또한 습윤면이다. 디퓨저 볼륨 (68) 의 이들 습윤면은 제 1 분배면 (96), 제 2 분배면 (98) 및 제 3 분배면 (100), 제 1 편향면 (102), 제 1 측면 (104), 제 2 측면 (106) 및 제 3 측면 (108), 제 1 천이면 (112) 및 제 2 천이면 (114), 및 상판 (24) 의 상승면 (124) 의 적어도 일부를 포함한다. 유입 슬롯 (126) 에 대하여, 외측면 (128) 뿐만 아니라 제 1 각진면 (132) 및 제 2 각진면 (133), 및 내측면 (130) 이 또한 습윤면이다. 반응 챔버 (16) 에 대하여, 반응 공간 (28) 을 규정하는 모든 면은 습윤면이다. 반응 공간 (28) 의 습윤면은 리세스면 (144), 제 1 측면 에지 (146), 제 2 측면 에지 (148) 및 제 3 측면 에지 (150), 및 제 2 편향면 (152) 은 물론 리세스된 영역 (142) 에 의해 노출된 상판 (24) 의 하부면 (64) 의 적어도 일부를 포함한다.
기판 (32) 의 프로세싱 동안, 프로세스 가스가 가스 전달 시스템 (14) 및 반응 챔버 (16) 내로 도입될 때, 프로세스 가스는 프로세싱되는 기판 (32) 의 면과 유사한 방식으로 습윤면과 반응한다. ALD 프로세스의 각 사이클 후에, 대략 재료의 일분자층 (monolayer) 이 기판 (32) 의 노출면 상에는 물론 가스 전달 시스템 (14) 및 반응 챔버 (16) 의 모든 습윤면에 증착된다. 습윤면이 매우 작은 표면 거칠기를 갖는다면, 재료의 증착층은 습윤면에 부착된 채 있지 않고, 막 퇴적 (accumulation) 과 함께 습윤면에서 박리 (flake off) 되는 경향이 있다. 박리된 증착층은 그 후 기판의 표면 상에 떨어져서, 기판 상의 전체 증착 불균일에 영향을 미칠 뿐만 아니라 실행가능한 칩 (viable chips) 을 산출할 수 있는 기판의 표면적을 더 적게 할 수 있다. 그러나, 습윤면의 표면 거칠기가 너무 높으면, 습윤면의 총 표면적은, 프로세스 가스가 프로세싱되는 기판 (32) 에 도달하기 이전에 프로세스 가스 내의 전구체 재료가 습윤면에 들러붙는 것으로 인해 프로세스 가스의 농도가 상당히 저감되는 그러한 양만큼 증가된다. 따라서, 본 발명은 각각의 습윤면에 표면 텍스처링을 제공하며, 표면 텍스처링은, 증착 재료의 층의 박리 양이 저감되고 결국 기판 표면과 접촉하는 프로세스 가스 내의 전구체 재료의 농도가 습윤면 상의 흡착에 의해 상당히 저감되지 않도록 각각의 습윤면에 표면 거칠기를 제공한다. ALD 가 표면 민감 프로세스이기 때문에, 표면 텍스처링의 양 및 정도는 습윤면 상에서의 박리 및 분리에 의해 야기되는 막 스트레스의 저감을 습윤면 상에의 전구체의 흡착으로 인한 화학적 손실과 밸런싱하도록 최적화되어야 한다.
일 실시형태에서, 모든 습윤면의 표면 거칠기는 약 30Ra 내지 250Ra (또는 μinches) 사이이다. 다른 실시형태에서, 모든 습윤면의 표면 거칠기는 약 32Ra 내지 110Ra 사이이다. 또 다른 실시형태에서, 습윤면의 표면 거칠기는 약 90Ra 이다. 믹서 (20), 디퓨저 (22) 및 반응 챔버 (16) 의 습윤면의 표면 거칠기는 습윤면과의 물리적 접촉 및 화학적 접촉 양자를 이용할 수도 있는 다중-스텝 프로세스를 통하여 행해진다.
표면 텍스처링은 이상적인 면으로부터의 수직 편위 (vertical deviation) 가 크게 제어되도록 표면을 처리하는데 이용되는 임의의 기술이다. 표면 텍스처링은 메커니컬 (즉, 그릿 블라스팅 (grit blasting) 또는 비드 (bead) 블라스팅, 샌딩 (sanding), 또는 재료를 제거하기 위한 머시닝) 또는 표면을 개시면으로부터 상승시키기 위해 그 표면을 유사하거나 다른, 그러나 양립가능한 재료로 코팅 (즉, 스프레이 코팅, 분체 (powder) 코팅, 디핑 (dipping), 증발 코팅 (evaporation coating), 스핀-온 (spin-on) 코팅 등) 을 포함하는 다양한 기술에 의해 달성될 수 있다.
본 발명의 바람직한 실시형태가 설명되었지만, 본 발명이 그 바람직한 실시형태에 제한되지 않고 본 발명으로부터 벗어남 없이 변경이 행해질 수도 있다는 것이 이해되어야 한다. 본 발명의 범위는 첨부된 특허청구의 범위에 의해 정의되며, 문자그대로 또는 등가물에 의해 특허청구의 범위의 의미 안에 있는 모든 디바이스, 프로세스 및 방법은 본원에 포함되는 것으로 의도된다.

Claims (20)

  1. 반도체 기판을 프로세싱하는 리액터로서, 상기 리액터는:
    적어도 제 1 습윤면을 갖는 디퓨저 (diffuser);
    상기 디퓨저와 동작적으로 접속된 반응 챔버로서, 상기 반응 챔버는 상기 디퓨저와 유체 소통하고 있으며, 상기 반응 챔버는 적어도 제 2 습윤면을 갖는, 상기 디퓨저와 동작적으로 접속된 상기 반응 챔버; 및
    상기 제 1 습윤면 및 상기 제 2 습윤면 중 적어도 하나 상의 표면 텍스처링 (surface texturing) 으로서, 상기 표면 텍스처링은 30Ra 내지 250Ra 사이의 표면 거칠기를 갖는, 상기 표면 텍스처링을 포함하는,
    반도체 기판을 프로세싱하는 리액터.
  2. 제 1 항에 있어서,
    상기 표면 텍스처링은 90Ra 의 표면 거칠기를 갖는, 반도체 기판을 프로세싱하는 리액터.
  3. 제 1 항에 있어서,
    상기 디퓨저는 하나 이상의 분배면들, 제 1 측면, 제 2 측면, 및 만곡된 제 3 측면을 포함하며,
    상기 하나 이상의 분배면들은 상기 제 1 측면과 상기 제 2 측면 사이에서 측방향으로 연장되고, 만곡된 상기 제 3 측면은 상기 디퓨저의 만곡된 단부를 형성하도록 상기 제 1 측면과 상기 제 2 측면 사이에 걸쳐있는, 반도체 기판을 프로세싱하는 리액터.
  4. 제 3 항에 있어서,
    상기 반응 챔버의 상부면은 만곡된 상기 제 3 측면과 실질적으로 대응하는 만곡된 유입 슬롯을 포함하는, 반도체 기판을 프로세싱하는 리액터.
  5. 제 3 항에 있어서,
    상기 하나 이상의 분배면들 중 적어도 하나의 분배면은 적어도 하나의 프로세스 가스의 흐름을 제한하도록 구성되어, 적어도 하나의 분배면은 상기 디퓨저의 중심축으로부터 멀리 떨어진 측방향 거리에서의 흐름 대비 상기 디퓨저의 중심축 근방의 흐름을 저감시키는, 반도체 기판을 프로세싱하는 리액터.
  6. 반도체 기판을 프로세싱하는 리액터로서, 상기 리액터는:
    디퓨저; 및
    상기 디퓨저와 동작적으로 접속된 반응 챔버로서, 상기 반응 챔버는 상기 디퓨저와 유체 소통하고 있는, 상기 디퓨저와 동작적으로 접속된 상기 반응 챔버를 포함하며,
    상기 디퓨저는 하나 이상의 분배면들, 제 1 측면, 제 2 측면, 및 만곡된 제 3 측면을 포함하고,
    상기 하나 이상의 분배면들은 상기 제 1 측면과 상기 제 2 측면 사이에서 측방향으로 연장되고,
    만곡된 상기 제 3 측면은 상기 디퓨저의 만곡된 단부를 형성하도록 상기 제 1 측면과 상기 제 2 측면 사이에 걸쳐있고, 그리고
    상기 반응 챔버의 상부면은 만곡된 상기 제 3 측면과 실질적으로 대응하는 만곡된 유입 슬롯을 포함하고, 상기 하나 이상의 분배면들 중 적어도 하나의 분배면은 적어도 하나의 프로세스 가스의 흐름을 제한하도록 구성되어, 적어도 하나의 분배면은 상기 디퓨저의 중심축으로부터 멀리 떨어진 측방향 거리에서의 흐름 대비 상기 디퓨저의 중심축 근방의 흐름을 저감시키는, 반도체 기판을 프로세싱하는 리액터.
  7. 제 6 항에 있어서,
    상기 적어도 하나의 분배면의 적어도 일부는 상기 반응 챔버의 상기 상부면으로부터 제 1 거리만큼 이격되고, 상기 적어도 하나의 분배면의 다른 일부는 상기 반응 챔버의 상기 상부면으로부터 제 2 거리만큼 이격되어 있는, 반도체 기판을 프로세싱하는 리액터.
  8. 제 7 항에 있어서,
    상기 제 1 거리는 상기 제 2 거리보다 더 작고, 상기 제 1 거리는 상기 분배면의 중심축과 상기 반응 챔버의 상기 상부면 사이에서 측정되는, 반도체 기판을 프로세싱하는 리액터.
  9. 제 7 항에 있어서,
    상기 제 1 거리는 2.0mm 와 2.5mm 사이인, 반도체 기판을 프로세싱하는 리액터.
  10. 제 7 항에 있어서,
    상기 제 2 거리는, 상기 적어도 하나의 분배면의 각각의 대향 단부와 상기 반응 챔버의 상기 상부면 사이에서 측정되고, 상기 제 2 거리는 3.5mm 와 4.8mm 사이인, 반도체 기판을 프로세싱하는 리액터.
  11. 제 7 항에 있어서,
    상기 제 2 거리는 상기 제 1 거리보다 더 크고, 상기 제 2 거리는 상기 적어도 하나의 분배면의 각각의 대향 단부와 상기 반응 챔버의 상기 상부면 사이에서 측정되는, 반도체 기판을 프로세싱하는 리액터.
  12. 반도체 기판을 프로세싱하는 리액터로서, 상기 리액터는:
    디퓨저; 및
    상기 디퓨저와 유체소통하며 동작적으로 접속된 반응 챔버를 포함하며,
    상기 디퓨저는,
    적어도 하나의 프로세스 가스를 수신하기 위해 채널이 형성되어 있는 유입부 (inlet portion); 및
    상기 유입부에 부착된 분배부를 포함하며,
    상기 분배부는, 탑재면, 상기 유입부에 인접한 제 1 분배면, 상기 제 1 분배면에 인접한 제 2 분배면, 상기 제 2 분배면에 인접한 제 3 분배면을 포함하고, 상기 제 1 분배면, 상기 제 2 분배면, 상기 제 3 분배면은 제 1 측면과 제 2 측면 사이에서 측방향으로 연장되고, 상기 제 1 측면 및 상기 제 2 측면은, 상기 제 1 분배면, 상기 제 2 분배면, 상기 제 3 분배면과 상기 탑재면 사이에서 연장되며,
    상기 분배부는 제 3 측면 및 상기 제 3 분배면과 상기 제 3 측면 사이에 만곡된 편향면을 더 포함하고,
    상기 적어도 하나의 분배면은 상기 디퓨저의 중심축 근방의 상기 적어도 하나의 프로세스 가스의 흐름을 제한하여, 상기 제 1 측면 및 상기 제 2 측면에 인접한 상기 적어도 하나의 프로세스 가스의 흐름 속도가 상기 중심축에 인접한 상기 적어도 하나의 프로세스 가스의 흐름 속도보다 크게하는,
    반도체 기판을 프로세싱하는 리액터.
  13. 제 12 항에 있어서,
    상기 제 3 분배면은 상기 디퓨저의 중심축 근방의 상기 적어도 하나의 프로세스 가스의 흐름을 제한하는, 반도체 기판을 프로세싱하는 리액터.
  14. 제 12 항에 있어서,
    상기 제 1 분배면은 상기 탑재면에 대하여 3°내지 7°만큼 경사져 있는, 반도체 기판을 프로세싱하는 리액터.
  15. 제 12 항에 있어서,
    상기 제 2 분배면은 상기 탑재면에 대하여 5°내지 20°만큼 경사져 있는, 반도체 기판을 프로세싱하는 리액터.
  16. 제 12 항에 있어서,
    상기 제 3 분배면은 상기 탑재면에 대하여 10°내지 35°만큼 경사져 있는, 반도체 기판을 프로세싱하는 리액터.
  17. 제 12 항에 있어서,
    상기 제 3 분배면은, 상기 중심축과 상기 제 1 측면 및 상기 제 2 측면과의 사이에서 일정한 경사 (constant slope) 를 갖는, 반도체 기판을 프로세싱하는 리액터.
  18. 제 12 항에 있어서,
    상기 제 3 분배면의 상기 중심축은, 상기 탑재면으로부터 1.0mm 내지 3.0mm 만큼 수직으로 이격되어 있는, 반도체 기판을 프로세싱하는 리액터.
  19. 제 12 항에 있어서,
    상기 제 1 측면 및 상기 제 2 측면에 인접한 상기 제 3 분배면은, 상기 탑재면으로부터 3.0mm 내지 5.0mm 만큼 수직으로 이격되어 있는, 반도체 기판을 프로세싱하는 리액터.
  20. 제 12 항에 있어서,
    상기 디퓨저와 유체 소통하는 믹서를 더 포함하는, 반도체 기판을 프로세싱하는 리액터.
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US20200056286A1 (en) 2020-02-20
US10844486B2 (en) 2020-11-24
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US10480072B2 (en) 2019-11-19
US9394608B2 (en) 2016-07-19
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