CN105964192B - 气相反应器和气相反应器系统 - Google Patents
气相反应器和气相反应器系统 Download PDFInfo
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Abstract
本发明涉及气相反应器和气相反应器系统。示例性反应器包括具有渐变高度的反应室。反应器的高度渐变被认为用于减小沿着通过反应器的气体流的压降。示例性反应器也可包括在间隙内的间隔件,以控制在区域和反应室之间的气体流。
Description
技术领域
本公开整体涉及气相设备和方法。更具体地讲,本公开涉及错流反应器和部件、包括该反应器和部件的系统、以及使用该反应器、部件和系统的方法。
背景技术
诸如化学气相沉积(CVD)反应器的气相反应器包括例如原子层沉积(ALD)反应器,其可用于多种应用,包括在基底表面上形成层。这样的反应器可用来沉积、蚀刻、清洁和/或处理基底上的层,以形成半导体装置、平板显示器装置、光伏装置、微机电系统(MEMS)等。
典型的气相反应器系统包括反应器,反应器包括反应室、流体联接到反应室的一个或多个前体气体源、流体联接到反应室的一个或多个载气或净化气体源、用于将气体(例如,(多种)前体气体和/或(多种)载气或净化气体)递送至基底表面的气体分布系统、以及流体联接到反应室的排气源。
错流反应器是一种类型的气相反应器,其特别地可用于反应室的快速吞吐和/或快速净化为所需的时—例如用于ALD沉积。在错流反应器中,气体通常在反应室的一端处进入反应室,在反应室内侧向地横跨基底流动,并且在反应室的第二端部处离开。
错流反应器的反应室通常是相对较小的,以允许室的快速净化。小的反应室也增加了前体将与基底表面反应的概率。
然而,由于相对较小的反应室,错流反应器往往会表现出从反应室的气体入口侧到反应室的流出口侧的压降。在反应室具有低的竖直高度的错流反应器中和/或在反应室具有在气体入口和流出口之间的长流动路径的反应器中,压降可能是显著的。前体的吸收和/或反应物在基底表面上的反应通常与反应室内的压力成正比。因此,反应室内的压降可造成沿着基底的表面(例如,在基底的前缘和后缘之间)的吸附/反应速率中的差值,这又可导致反应室内的过程的不均匀性增加。因此,需要改进的反应器和反应室。
与错流反应器相关联的另一个问题是在反应室和例如反应器的下部或加载/卸载区域之间的不均匀的气体流。许多反应器在反应室和加载/卸载区域之间不形成完整的密封,而是允许在这两个区域之间的受控的气体流。然而,在反应器的两个区域之间的压差可围绕基底的周边不同。不均匀的压力又可导致在基底的背面和边缘上的沉积或与基底反应以及其它问题。因此,需要在反应室和反应器内的另一个室之间具有更均匀的压差的改进的反应器设计。
发明内容
本公开的各种实施例提供了改进的错流反应器、错流反应器的部件和包括该反应器的系统。错流反应器和系统适合在多种气相过程中使用,例如,化学气相沉积过程(包括等离子增强化学气相沉积过程)、气相蚀刻过程(包括等离子增强气相蚀刻过程)、气相清洁(包括等离子增强清洁过程)、以及气相处理过程(包括等离子增强气相处理过程)。如下文更详细地阐述的,示例性的反应器、系统和方法可能特别适合其中来自反应室的气体的相对短的吹扫时间为所需的过程—例如,原子层沉积过程。
根据本公开的各种实施例,气相反应器包括:错流反应室,其包括渐变的顶部表面和底部表面,底部表面包括底板的一部分和感受器的顶部表面的一部分;气体扩散器,其联接到反应室的入口;以及排放口,其联接到反应室的出口。根据这些实施例的各个方面,相对于在出口处的在渐变的顶部表面和感受器和/或底板的顶部表面之间的距离,在渐变的顶部表面和感受器和/或底板的顶部表面之间的距离在靠近入口处更大。根据其它方面,相对于在入口处的在渐变的顶部表面和感受器和/或底板的顶部表面之间的距离,在渐变的顶部表面和感受器和/或底板的顶部表面之间的距离在靠近出口处更大。根据另外的方面,渐变的表面包括线性地渐变的表面。在渐变的顶部表面和感受器和/或底板的顶部表面之间的距离在或入口处或附近可以在约1mm和约10mm之间的范围内。类似地,在渐变的顶部表面和感受器和/或底板的顶部表面之间的距离在或出口处或附近可以在约1mm和约10mm之间的范围内。根据另外的示例性方面的气相反应器可包括在感受器和底板之间的至少一个间隔件,例如销。使用间隔件有利于在感受器和底板之间的一致的间距,同时仍允许在诸如反应器内的加载或过渡区域的区域和反应室之间的流动。根据另外的实施例,在感受器和底板之间的间隙包括竖直和/或水平间隙部段。
根据本公开的附加实施例,诸如原子层沉积(ALD)反应器的气相反应器包括:错流反应室,其包括顶部表面、侧表面和底部表面,其中,在顶部表面和底部表面之间的距离从反应室的入口到反应室的出口渐变;气体扩散器,其联接到入口;以及排放口,其联接到出口。在顶部表面和底部表面之间的距离渐变,使得在顶部表面和底部表面之间的距离从入口到出口增加或从入口到出口减小。根据这些实施例的各个方面,气相反应器包括在感受器和底板之间的间隙。该间隙可包括一个或多个水平和/或竖直间隙部段。根据另外的方面,气相反应器包括在感受器和底板之间的间隔件,例如销。根据另外的示例性实施例,顶部表面为渐变的(例如,线性地)。
根据本公开的又一些示例性实施例,气相反应器系统包括如本文所述的气相反应器。例如,示例性系统包括气相反应器,该气相反应器包括错流反应室,其中,反应室的竖直高度(例如,在顶部表面和底部表面之间的距离)是从入口到出口渐变的(或者增加地或者减少地)。根据这些实施例的各个方面,该系统也可包括下室和在反应室与下室之间的间隙。该系统可包括诸如销的间隔件,以在反应室和下室之间提供所需的竖直和/或水平间隙。
以上发明内容和以下具体实施方式仅仅是示例性和说明性的,而并不限制本公开或要求保护的发明。
附图说明
当结合下面的附图考虑时,通过参看具体实施方式和权利要求书,可以得到对本公开的示例性实施例的更完整的理解。
图1示出了根据本公开的示例性实施例的气相反应器系统的一部分。
图2示出了根据本公开的示例性实施例的气相反应器系统的一部分的立体剖视图。
图3示出了根据本公开的示例性实施例的反应室的一部分的近距离视图。
图4示出了根据本公开的另外的示例性实施例的反应室的部分的另一个近距离视图,示出了间隔件、感受器的一部分和底板的一部分。
图5示出了根据本公开的附加的示例性实施例的在感受器和底板之间的间隙,该间隙包括水平间隙部段和竖直间隙部段。
图6示出了根据本公开的另一些附加的示例性实施例的在感受器和底板之间另一个示例性间隙。
图7示出了根据本公开的另一些附加的示例性实施例的在感受器和底板之间另一个示例性间隙。
图8示出了根据本公开的另一些附加的示例性实施例的在感受器和底板之间另一个示例性间隙。
应当理解,附图中的元件为了简洁和清晰而示出,并且不一定按比例绘制。例如,附图中的元件中的一些的尺寸可能相对于其它元件被夸大,以帮助改善对本公开的图示实施例的理解。
具体实施方式
下文提供的示例性实施例的描述仅仅是示例性的,并且仅意图用于说明目的;以下描述并非意图限制本公开或权利要求的范围。此外,具有所述特征的多个实施例的叙述并非意图排除具有附加特征的其它实施例或并入所述特征的不同组合的其它实施例。
如下文更详细地阐述的,本公开的各种实施例涉及气相反应器和反应器系统,该系统包括高度可变的反应室和/或间隔件以帮助限定在反应器的感受器和底板之间的间隙。
图1-5示出了根据本公开的示例性实施例的气相反应器系统100的部分或部段。系统100包括反应器202,反应器202包括反应室204、感受器206、扩散器208、混合器102、反应室排放导管104和区域210,该区域在本文中有时称为下室或加载/卸载区域。虽然未示出,但系统100可以附加包括:各种气体源,例如,净化气体源和反应物气体源;一个或多个排气和/或真空源;和/或用于一种或多种反应物的直接和/或远程等离子和/或热激发设备中的一个或多个。
反应器202可用来将材料沉积到基底的表面上、蚀刻来自基底的表面的材料、清洁基底的表面、处理基底的表面、将材料沉积到反应室内的表面上、清洁反应室内的表面、蚀刻反应室内的表面、和/或处理反应室204内的表面。反应器202可以是独立式反应器或群集工具的一部分。此外,反应器202可专用于沉积、蚀刻、清洁或处理过程,或者反应器202可用于多个过程,例如,用于沉积、蚀刻、清洁和处理过程的任何组合。以举例的方式,反应器202可包括通常用于诸如原子层沉积(ALD)过程的化学气相沉积(CVD)过程的反应器。
反应室204为错流反应室。在操作期间,气体经由扩散器208进入反应室204,并且水平地通过反应室204流至排放导管104。典型的错流反应室具有在反应室的顶部表面和反应室的底部表面(例如,感受器206的顶部表面)之间的基本上恒定的高度。如上所述,这样的设计可导致在横跨反应室的气体流的方向上的显著的压降,这又常常导致反应室内的基底的表面的不均匀的蚀刻、清洁、沉积和/或处理。
根据本公开的示例性实施例,反应室204包括在反应室212的顶部表面和感受器214和/或底板308的顶部表面之间的渐变的距离。起初,发明人认为使该距离从入口216到出口218由小到大渐变对于减小横跨反应室的压降将最有效。然而,发明人惊奇地发现减小在反应室212的顶部表面和感受器214和/或底板308的顶部表面之间的竖直距离更好地减小沿着反应室的流动路径的压差。这就是说,增加和减小在反应室212的顶部表面和感受器214和/或底板308的顶部表面之间的距离都减小沿着通过反应室204的气体的流动路径的压降,并且导致在反应室204内的基底的更均匀的加工。
根据本公开的示例性实施例,在反应室212的顶部表面和感受器214的顶部表面之间的距离在入口216处在约1mm和约10mm、约2mm和约8mm、或约2.5mm和约7.5mm之间。根据另外的实施例,在反应室212的顶部表面和感受器214和/或底板308的顶部表面之间的距离在出口218处在约1mm和约10mm、约2mm和约8mm、或约2.5mm和约7.5mm之间。以特定的示例为例,在反应室212的顶部表面和感受器214和/或底板308的顶部表面之间的距离在入口216处为7.5mm,并且在反应室212的顶部表面和感受器214和/或底板308的顶部表面之间的距离在出口218处为2.5mm。以其它示例为例,在反应室212的顶部表面和感受器214和/或底板308的顶部表面在入口216处为2.5mm,并且在反应室212的顶部表面和感受器214和/或底板308的顶部表面之间的距离在出口218处为7.5mm。
在反应室212的顶部表面和感受器214和/或底板308的顶部表面之间的高度差值可以是线性渐变的。备选地,渐变的高度差值可以是曲线的。此外,反应室212的顶部表面、感受器214的顶部表面和底板308的顶部表面中的一个或多个可以是渐变的。以举例的方式,感受器206和底板308是水平线性的,并且反应室212的顶部表面从入口216至出口218渐变(例如,线性地)。
感受器206设计成在加工期间将基底或工件(未示出)保持在位。根据一些示例性实施例,反应器202包括直接等离子设备,在这种情况下,感受器206可形成直接等离子电路的一部分。另外或备选地,感受器206可在加工期间被加热、冷却或处于环境过程温度。以举例的方式,感受器可在基底加工期间被加热,使得反应器202以冷壁、热基底构型操作。
根据本公开的示例性实施例,反应器202包括在反应室的底板308和感受器206之间的间隙,在图3中大体表示为300。间隙300被构造成在基底加工期间允许一些气体在区域210和反应室204之间流动。这样的构型可减少与基底的背面的不期望的反应。
在图示示例中,间隙300包括水平部段302、第一竖直部段304和第二竖直部段306。水平部段302可具有示出为图5中所示L1的长度,该长度在约2mm和20mm、约5mm和15mm、或约7.5mm和12.5mm之间。示出为D1的在底板308和感受器206之间的距离可沿着L1在从约0.001至约0.5mm、约0.01至约0.25mm、或约0.05至约0.2mm的范围内变化,或者为约0.1mm。竖直部段304可具有示出为图3中的H1的长度,该长度在约2mm和20mm、约5mm和15mm、或约7.5mm和12.5mm之间。示出为D2的在底板308和感受器206之间的距离可沿着H1在从约0.001至约0.5mm、约0.01至约0.25mm、或约0.05至约0.2mm的范围内变化,或者为约0.1mm。类似地,竖直部段306可具有示出为H2的长度,该长度在约2mm和20mm、约5mm和15mm、或约7.5mm和12.5mm之间。示出为D3的在底板308和感受器206之间的距离可沿着H2在从约0.001至约0.5mm、约0.01至约0.25mm、或约0.05至约0.2mm的范围内变化,或者为约0.1mm。
示例性反应器202可包括一个或多个间隔件402,以例如有利于一致地获得在感受器206和底板308之间的所需间距。以举例的方式,反应器202包括在1个和10个、2个和个8之间的、或约3个间隔件402。间隔件402可由任何合适的材料形成,例如,钛、不锈钢等。
在图示示例中,间隔件402为(例如,带螺纹的)销。就带螺纹的销而言,销的高度(例如,间隔件402的顶部404延伸超出感受器206的表面406的距离)可被操纵—例如通过拧紧或拧松间隔件402。
在图示示例中,间隔件402包括头部部段310和带螺纹部段312。头部部段310可以不是带螺纹的,和/或可以被构造成接纳工具以便能够相对于感受器206操纵间隔件402。头部部段310可驻留在感受器206的通路314内。带螺纹部段312可通过螺纹接纳在感受器206内的带螺纹通路316内。备选地,间隔件402可以以相同或类似的方式附接到底板308,以便在底板308和感受器206之间提供所需的间距。
根据本公开的一些示例性实施例,底板308包括凹部602,以接纳间隔件402的一部分(例如,头部部段410的一部分)。在这些情况下,感受器206可被旋转以对齐(多个)间隔件402与(多个)凹部602,从而允许感受器206直接接触底板308。该构型可能可用于泄漏测试或用于对反应器202执行其它检查或维护。在加工反应器202内的基底之前或期间,感受器206可接着被旋转至加工位置,例如,图5中所示位置。
图7和图8示出了根据本公开的附加的示例性实施例的反应室700的一部分和间隔件702。间隔件702类似于间隔件402,不同的是间隔件702包括凹部区域704。凹部区域704可用来接纳定位螺钉以设定间隔件402的所需高度。
图7和图8还示出在感受器708和底板710之间的蛇形间隙706。蛇形间隙706包括第一区段712、第二区段714、第三区段716、第四区段718和第五区段720。区段712、718和720的尺寸可以与上述尺寸H1、D2、L1、D2和H2、D3相同或相似。第二区段714的高度可以在第一区段712的高度的从约1/4至约1/2的范围内变化且具有相同的宽度,第三区段716的高度为第一区段712的高度的约1/4至约1/2且具有相同的宽度。
虽然本文阐述了本公开的示例性实施例,但应当理解,本公开不受其限制。例如,虽然反应器和系统结合各种具体构型进行描述,但本公开不一定限于这些示例。在不脱离本公开的精神和范围的情况下,可以进行本文阐述的示例性系统和方法的各种修改、变型和改进。
除非另外指明,本公开的主题包括各种系统、部件和构型的所有新颖和非显而易见的组合和子组合和本文所公开的其它特征、功能、动作和/或特性,以及其任何和全部等同形式。
Claims (21)
1.一种气相反应器,包括:
错流反应室,其包括渐变的顶部表面和底部表面,所述底部表面包括底板的一部分和感受器的顶部表面的一部分;
气体扩散器,其联接到所述渐变的顶部表面的顶部且在所述反应室的第一端联接到所述反应室的入口,所述入口包括位于所述渐变的顶部表面与所述反应室的侧表面之间的空间;
排放导管,其在所述反应室的第二端联接到所述反应室的出口,所述第二端与所述第一端相反;以及
蛇形间隙,所述蛇形间隙形成在所述反应室与下室之间以及所述底板与所述感受器之间,所述蛇形间隙包括第一区段、第二区段、第三区段、第四区段和第五区段,
其中,所述第二区段的高度是所述第一区段的高度的1/4至1/2;
其中,所述渐变的顶部表面横跨在所述入口和所述出口之间;
其中,所述反应器的渐变高度导致流过所述反应器的气流的压降。
2.根据权利要求1所述的气相反应器,其中,相对于在所述出口处的在所述渐变的顶部表面和所述底部表面之间的距离,在所述渐变的顶部表面和所述底部表面之间的距离在靠近所述入口处更大。
3.根据权利要求1所述的气相反应器,其中,相对于在所述入口处的在所述渐变的顶部表面和所述底部表面之间的距离,在所述渐变的顶部表面和所述底部表面之间的距离在靠近所述出口处更大。
4.根据权利要求1-3中的任一项所述的气相反应器,其中,所述渐变的表面包括从所述入口到所述出口线性地渐变的表面。
5.根据权利要求1-3中的任一项所述的气相反应器,其中,在靠近所述入口处的在所述渐变的顶部表面和所述底部表面之间的距离在1mm和10mm之间的范围内。
6.根据权利要求1-3中的任一项所述的气相反应器,其中,在靠近所述出口处的在所述渐变的顶部表面和所述底部表面之间的距离在1mm和10mm之间的范围内。
7.根据权利要求1-3中的任一项所述的气相反应器,还包括在所述感受器和所述底板之间的至少一个间隔件,其中,所述至少一个间隔件的一部分位于所述感受器内。
8.根据权利要求7所述的气相反应器,其中,所述至少一个间隔件包括销。
9.根据权利要求1-3中的任一项所述的气相反应器,其中,所述第三区段的高度是所述第一区段的高度的1/4至1/2。
10.根据权利要求9所述的气相反应器,其中,所述第一区段的宽度和所述第二区段的宽度是相同的。
11.一种气相反应器,包括:
错流反应室,其包括顶部表面、侧表面和底部表面,其中,在所述顶部表面和所述底部表面之间的距离从所述反应室的第一端处的入口渐变至所述反应室的第二端处的出口,所述第二端与所述第一端相反,所述入口包括位于渐变的顶部表面与所述侧表面之间的空间;
气体扩散器,其联接到所述顶部表面且联接到所述入口;
排放口,其联接到所述第二端处的所述出口;
蛇形间隙,所述蛇形间隙位于所述错流反应室与感受器之间,且构造成在基底处理期间允许所述错流反应室与下室之间的气流;以及
间隔件,所述间隔件限定所述蛇形间隙的一部分。
12.根据权利要求11所述的气相反应器,其中,所述气相反应器包括原子层沉积反应器。
13.根据权利要求11所述的气相反应器,其中,所述底部表面包括感受器的顶部表面的一部分和底板的一部分。
14.根据权利要求13所述的气相反应器,其中,所述蛇形间隙包括第一区段、第二区段、第三区段、第四区段和第五区段,其中,所述第二区段的高度是所述第一区段的高度的1/4至1/2。
15.根据权利要求14所述的气相反应器,其中,所述第三区段的高度是所述第一区段的高度的1/4至1/2。
16.根据权利要求14所述的气相反应器,其中,所述第一区段的宽度和所述第二区段的宽度是相同的。
17.根据权利要求11所述的气相反应器,其中,所述顶部表面为渐变的。
18.根据权利要求11-17中的任一项所述的气相反应器,其中,相对于在所述出口处的在所述渐变的顶部表面和所述底部表面之间的距离,在所述渐变的顶部表面和所述底部表面之间的距离在靠近所述入口处更大。
19.根据权利要求11-17中的任一项所述的气相反应器,其中,相对于在所述入口处的在所述渐变的顶部表面和所述底部表面之间的距离,在所述渐变的顶部表面和所述底部表面之间的距离在靠近所述出口处更大。
20.一种气相反应器系统,包括:
气相反应器,其包括错流反应室,其中所述反应室的竖直高度从第一端处的入口渐变至第二端处的出口,所述第二端与所述第一端相反,所述入口包括位于渐变的顶部表面与所述反应室的侧表面之间的空间;
气体扩散器,其联接到所述气相反应器的顶部和所述入口;
下室;
在所述反应室和所述下室之间的蛇形间隙,其中,所述蛇形间隙包括多个竖直间隙部段和多个水平间隙部段;以及
间隔件,所述间隔件限定所述蛇形间隙的一部分。
21.根据权利要求20所述的气相反应器,还包括用于限定所述蛇形间隙的另一间隔件。
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US10529542B2 (en) | 2020-01-07 |
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