CN112074624A - 用于控制中心到边缘压力改变的压力歪斜系统 - Google Patents

用于控制中心到边缘压力改变的压力歪斜系统 Download PDF

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CN112074624A
CN112074624A CN201980030059.6A CN201980030059A CN112074624A CN 112074624 A CN112074624 A CN 112074624A CN 201980030059 A CN201980030059 A CN 201980030059A CN 112074624 A CN112074624 A CN 112074624A
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S·斯里瓦斯塔瓦
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Abstract

本文中所述的实施例涉及用于控制腔室中的中心到边缘压力改变的压力歪斜系统，以用于沉积具有改进的整体均匀性的先进图案化膜。压力歪斜系统包括经配置以在腔室中形成的泵送区、在泵送区域中设置的壁。腔室包括处理区域、泵送区域、以及连接至泵的泵送路径以排放来自泵送区域的工艺气体。每一泵送区域对应于侧面为壁的泵送区域的空间。供应管道连接至对应的泵送区及对应的质量流动控制装置，以控制提供至对应的泵送区的惰性气体的流率，以控制处理区域的面积中的压力。

Description

用于控制中心到边缘压力改变的压力歪斜系统
背景技术
技术领域
本公开内容的实施例总的来说涉及具有设置于其中的压力歪斜系统的化学气相沉积腔室，以用于沉积具有改进的整体均匀性的先进的图案化膜。
相关技术的描述
一般采用化学气相沉积(CVD)和等离子体增强化学气相沉积(PECVD)以在基板(例如，半导体晶片)上沉积先进的图案化膜。一般通过将工艺气体导入含有基板的腔室来完成CVD及PECVD。典型地经由坐落在腔室顶部附近的气体扩散器来向下引导工艺气体。在PECVD期间，通过将来自耦合至腔室的一个或多个射频(RF)源的RF功率应用至腔室，腔室中的工艺气体被激励(例如，激发)成等离子体。
工艺气体的流动径向地(中心到边缘)跨腔室中的基板的表面分布。大部分的工艺气体的流动流经气体扩散器至腔室中心。在沿着气体扩散器的点处的工艺气体具有下降流动至基板，接触基板表面，并接着具有平行于基板表面的流动。在气体扩散器的每一点处，工艺气体具有对基板的垂直速度，所述垂直速度转移至在径向向外跨基板的水平速度下的水平流动。在气体扩散器的每一点处，工艺气体的垂直速度可不相等。因此，工艺气体的水平速度也可不相等，造成工艺气体在基板表面的部分之上的非均匀停留时间。非均匀停留时间导致跨基板的非均匀等离子体分布。工艺气体的非均匀停留时间及导致的非均匀等离子体分布造成先进图案化膜的非均匀沉积。特定地，非均匀停留时间影响先进图案化膜的平面均匀性和残留均匀性。
据此，本领域中所需要的是：用于控制工艺气体的停留时间的系统，以影响先进图案化膜的平面均匀性和残留均匀性。
发明内容
在一个实施例中，提供一种系统。所述系统包括腔室盖和腔室主体。所述腔室主体具有：底座，所述底座设置于所述腔室主体中；内衬垫，所述内衬垫耦合至泵送环；以及外衬垫。所述底座、所述内衬垫、所述泵送环、以及所述腔室盖形成处理区域。所述内衬垫和所述外衬垫形成具有入口和出口的泵送路径。所述泵送环、所述内衬垫、所述外衬垫、以及所述入口形成泵送区域。两个或更多个壁设置于所述泵送区域中。所述两个或更多个壁中的相邻壁设置于所述泵送区域中，在所述泵送区域中形成泵送区。包括多个供应管道。每一个供应管道流体地连接至所述泵送区的对应的泵送区及对应的流动控制装置。每一个流动控制装置经配置以控制提供至所述对应的泵送区的气体的流率，以控制所述处理区域的面积中的压力且从所述处理区域经由所述出口排放工艺气体。
在另一个实施例中，提供一种腔室。所述腔室包括腔室盖及腔室主体。所述腔室主体具有：底座，所述底座设置于所述腔室主体中；内衬垫，所述内衬垫耦合至泵送环；和外衬垫。所述底座、所述内衬垫、所述泵送环、以及所述腔室盖形成处理区域。所述内衬垫和所述外衬垫形成具有入口和出口的泵送路径。所述泵送环、所述内衬垫、所述外衬垫、以及所述入口形成泵送区域。所述腔室包括压力歪斜系统。所述压力歪斜系统具有设置于所述泵送区域中的两个或更多个壁以及多个供应管道。所述两个或更多个壁设置于所述泵送区域中，所述两个或更多个壁中的相邻壁设置于所述泵送区域中，在所述泵送区域中形成泵送区。每一个供应管道连接至相邻壁的对应的泵送区及对应的流动控制装置。
在又另一个实施例中，提供一种腔室。所述腔室包括腔室盖及腔室主体。所述腔室主体具有：底座，所述底座设置于所述腔室主体中；内衬垫，所述内衬垫耦合至泵送环；以及外衬垫。所述底座、所述内衬垫、所述泵送环、以及所述腔室盖形成处理区域。所述内衬垫和所述外衬垫形成具有入口和出口的泵送路径。所述泵送环、所述内衬垫、所述外衬垫、以及所述入口形成泵送区域。所述腔室包括压力歪斜系统。所述压力歪斜系统具有设置于所述泵送区域中的两个或更多个壁以及多个供应管道。所述两个或更多个壁设置于所述泵送区域中，所述两个或更多个壁中的相邻壁设置于所述泵送区域中，在所述泵送区域中形成泵送区。每一个供应管道连接至相邻壁的对应的泵送区以及对应的流动控制装置。每一个流动控制装置经配置以控制提供至所述对应的泵送区的气体的流率，以控制所述处理区域的面积中的压力且从所述处理区域经由所述出口排放工艺气体。
附图说明
于是可以以详细理解本公开内容的上述特征的方式，可通过参考实施例来对本公开内容进行更特定描述(本公开内容简短总结如上)，其中实施例中的一些被示出在附图中。然而，注意到，附图仅示出示例性的实施例，并因此不视作限制其范围，并且可允许其他等效的实施例。
图1A为根据一实施例的具有压力歪斜系统设置于其中的化学气相沉积腔室的示意性横截面视图。
图1B为根据一实施例的具有压力歪斜系统设置于其中的化学气相沉积腔室的示意性横截面视图。
图1C为根据一实施例的具有压力歪斜系统设置于其中的化学气相沉积腔室的示意性横截面视图。
图2为根据一实施例的压力歪斜系统的示意性顶视图。
为了促进理解，尽可能使用相同的参考标号来标记附图中共有的相同元件。构想一个实施例的元件和特征可有利地并入其他的实施例中，而无须进一步叙述。
具体实施方式
本文中所述的实施例涉及用于控制腔室中的中心到边缘压力改变的压力歪斜系统，以用于沉积具有改进的整体均匀性的先进图案化膜。压力歪斜系统包括经配置以在腔室中形成的泵送区、在泵送区域中设置的壁。腔室包括处理区域、泵送区、以及连接至泵的泵送路径以排放来自泵送区域的工艺气体。每一个泵送区对应于侧面为壁的泵送区域的空间。供应管道连接至对应的泵送区及对应的质量流动控制装置，以控制提供至对应的泵送区的惰性气体的流率，以控制处理区域的面积中的压力。
图1A为具有压力歪斜系统200设置于其中的化学气相沉积(CVD)腔室100的示意性横截面视图。腔室100的一个示例为由位于加州圣克拉拉(Santa Clara,Calif)的应用材料公司(Applied Materials Inc.)所制造的
Figure BDA0002758286020000031
腔室或XP PRECISIONTM腔室。腔室100具有腔室主体102和腔室盖104。腔室主体包括处理容积106和泵送容积108。处理容积106为由腔室盖104、泵送环118(也称为外隔离器)、内泵送衬垫120、底部泵送板122、以及底部加热器124所界定的空间。内泵送衬垫120耦合至泵送环118及底部泵送板122。底部泵送板122耦合至底部加热器124以界定处理容积106。处理容积106具有底座126以用于支撑腔室100内的基板(未示出)。底座126典型地包括加热元件(未示出)。通过杆128将底座126可移动地设置在处理容积106中，杆128延伸穿过底部加热器124及腔室主体102。杆128连接至升降系统130，升降系统130在升高处理位置(如所示出)和降低位置之间移动底座126，所述降低位置促进基板经由狭缝阀132传送至处理容积106及从处理容积106传送，穿过本文中详细描述的腔室主体102和泵送容积108而形成狭缝阀132。升高处理位置对应于由腔室盖104、底座126、底座126的边缘环134、内泵送衬垫120、以及泵送环118所界定的处理区域110。
泵送容积108包括泵送区域112及泵送路径114。泵送区域112为由泵送环118、间隔器环136、内泵送衬垫120、以及泵送路径114的入口138所界定的空间。泵送路径114为由泵送路径114的入口138、耦合至腔室主体102的外泵送衬垫140、底部加热器124、以及穿过底部加热器124及腔室主体102设置的出口所界定的空间。泵送路径114的出口142经由管道146连接至泵144。在可与本文中所述的其他实施例组合的一个实施例中，泵送环118、间隔器环136、内泵送衬垫120、外泵送衬垫140、底部泵送板122、以及底部加热器124包括含有陶瓷的材料。在可与本文中所述的其他实施例组合的另一个实施例中，泵送环118包括氧化铝(Al2O3)，间隔器环包括6061铝合金，内泵送衬垫120包括Al2O3和/或6061铝合金，外泵送衬垫140包括6061铝合金，底部泵送板122包括Al2O3，并且底部加热器124包括6061铝合金。泵送环118包括孔洞148(在图1C及图2中示出)，孔洞148允许泵144控制处理区域110内的压力及从处理区域110经由泵送区域112及泵送路径114排放气体及副产物。如图1C中所示出，腔室100的横截面视图示出泵送环118的孔洞148，穿过泵送环118形成孔洞148，以允许从处理区域110排放气体及副产物以流经泵送区域112及泵送路径114。泵送环118允许来自处理区域110的气体以促进腔室100内的处理的方式流动至泵送容积108。在一个实施例中，处理区域110内的整体压力为约3托(torr)至约5托。然而，也构想其他压力。
腔室100也包括耦合至腔室盖104的气体分配组件116，以输送一个或多个气体的流动进入处理区域110。气体分配组件116包括耦合至在腔室盖104中形成的气体入口通路154的气体歧管150以接收来自一个或多个气体源152的气体流动。气体流动跨气体盒156分配，流经背板160的多个孔洞158，进一步跨由背板160及面板162所界定的气室168分配，且经由面板162的多个孔洞(未示出)流入处理区域110中。RF(射频)源164耦合至气体分配组件116。RF源164对气体分配组件116供能以促进在处理区域110中从气体产生等离子体。在连接至功率供应时，底座126接地或底座126可用作阴极以在面板162和底座126之间产生电容性电场以将等离子体物质朝向基板加速来沉积先进图案化膜。控制器101耦合至腔室100及腔室100的压力歪斜系统200。控制器101经配置以控制处理期间腔室100和压力歪斜系统200的方面。
气体的流动在处理区域110中径向地(中心到边缘)跨基板表面分配。在可与本文中所述的其他实施例组合的一个实施例中，气体的流动大部分流经面板162到处理区域110的中心。沿着面板162的点处的气体具有下降流动至基板，接触基板表面，且具有平行于基板表面的流动。在面板162的每一点处，气体具有对基板的垂直速度，所述垂直速度转移至在径向向外跨基板的水平速度下的水平流动。泵144排放气体经过泵送环118、泵送区域112、以及泵送路径114，而导致跨基板的压力的中心到边缘改变。在面板162的每一点处，气体的垂直速度可不相等。因此，气体的水平速度不相等，造成气体在基板表面的部分之上的非均匀停留时间。非均匀停留时间导致跨基板的非均匀等离子体分配。气体的非均匀停留时间及导致的非均匀等离子体分配造成先进图案化膜的非均匀沉积。特定地，非均匀停留时间影响先进图案化膜的平面均匀性及残留均匀性。因此，腔室100包括压力歪斜系统200以控制跨基板的中心到边缘压力改变以控制平面均匀性及残留均匀性。
图2为用于控制处理腔室(诸如腔室100)中的中心到边缘压力改变的压力歪斜系统200的示意性顶视图。压力歪斜系统200包括至少两个泵送区。在可与本文中所述的其他实施例组合的一个实施例中，压力歪斜系统200(如所示出)包括四个泵送区202a-202d。压力歪斜系统200包括得到先进图案化膜的平面均匀性及残留均匀性所需的那么多的泵送区。泵送区202a-202d中的每一个泵送区连接至歧管204，歧管204连接至惰性气体供应206。泵送区202a-202d中的每一个泵送区通过多个供应管道208连接至歧管204。每一个供应管道208具有流动控制装置210，诸如质量流动控制(MFC)装置，流动控制装置210精确地控制从歧管204提供至泵送区202a-202d中的泵送区中的一个的惰性气体(诸如氮气(N2)、氢气(H2)、氩(Ar)、以及氦(He))的流率。如图1A中所示出，每一个供应管道208连接至通道166，穿过通往泵送区域112的间隔器环136设置通道166。泵送区202a-202d中的每一个泵送区对应于侧面为设置于泵送区域112中的壁212的泵送区域112的空间(如图1B中所示出)。
图1B为具有压力歪斜系统200设置于其中的腔室100的另一个示意性横截面视图，示出了设置于泵送区域112中的壁212。设置于泵送区域112中的壁212界定泵送区域112中的泵送区202a-202d中的每一个泵送区。界定泵送区202a-202d中的每一个泵送区的壁212允许独立地控制每一个泵送区中的压力，因为气体无法经过泵送环118的孔洞148流入泵送区域112和流经被壁212阻断的泵送路径114。泵送区202a-202d中的每一个泵送区可具有提供至泵送区域212的惰性气体的流率，以控制处理区域110的面积中的压力改变，以影响跨基板的气体的水平速度，从而进一步控制所沉积的先进图案化膜的平面均匀性及残留均匀性，因而控制所沉积的先进图案化膜的整体均匀性。
返回参考图2，泵送区202a-202d中的每一个泵送区控制处理区域110的面积214a-214d。面积214a-214d中的每一个面积对应于基板表面的区域。例如，为了减少跨处理区域110的面积214a的气体的水平速度和增加基板表面的区域之上的气体的停留时间，流动控制装置210控制从歧管204提供至泵送区202a的惰性气体的流率。提供至泵送区202a的惰性气体的流率设定泵送区域112中的压力，这控制了处理区域110的面积214a中的中心到边缘的压力改变。在可与本文中所述的其他实施例组合的一个实施例中，处理区域110的面积214a-214d中的中心到边缘的压力改变比处理区域110内的整体压力要大或要小约1托至约2托。在可与本文中所述的其他实施例组合的一个实施例中，增加惰性气体的流率导致减少的水平速度及增加的基板表面的区域之上的停留时间(对应于面积214a-214d)。在可与本文中所述的其他实施例组合的另一个实施例中，减少惰性气体的流率导致增加的水平速度及减少的基板表面的区域之上的停留时间(对应于面积214a-214d)。优化提供至泵送区202a-202d中的每一个泵送区的流率，以控制处理区域110的每一个面积214a-214d中的中心到边缘的压力改变，从而改进所沉积的先进图案化膜的整体均匀性。
综上所述，本文中描述用于在CVD腔室中控制中心到边缘的压力改变的压力歪斜系统，以用于沉积具有改进的整体均匀性的先进图案化膜(例如，含碳或硼掺杂碳的硬掩模)。使用具有至少两个泵送区的压力歪斜系统，其中每一个泵送区连接至歧管至具有MFC装置的惰性气体供应以精确地控制提供至每一个泵送区的惰性气体的流率。提供至每一个泵送区的惰性气体的流率控制处理区域的面积中的压力改变，以影响跨基板的气体的水平速度，这继而控制所沉积的先进图案化膜的平面均匀性及残留均匀性，并且由此控制所沉积的先进图案化膜的整体均匀性。
尽管前述针对的是本公开内容的示例，但在不脱离其基本范围的情况下，可设计本公开内容的其他及进一步的示例，且其范围由所附的权利要求所确定。

Claims (15)

1.一种系统，包括：
腔室盖；
腔室主体，所述腔室主体具有：
底座，所述底座设置于所述腔室主体中；
内衬垫，所述内衬垫耦合至泵送环，其中所述底座、所述内衬垫、所述泵送环以及所述腔室盖形成处理区域；以及
外衬垫，其中：
所述内衬垫和所述外衬垫形成具有入口和出口的泵送路径；并且
所述泵送环、所述内衬垫、所述外衬垫以及所述入口形成泵送区域；
两个或更多个壁，所述两个或更多个壁设置于所述泵送区域中，所述两个或更多个壁的相邻壁设置于所述泵送区域中，在所述泵送区域中形成泵送区；以及
多个供应管道，其中每一个供应管道流体地连接至所述泵送区中的对应的泵送区以及对应的流动控制装置，其中每一个流动控制装置经配置以控制提供至所述对应的泵送区的气体的流率，以控制所述处理区域的面积中的压力并且从所述处理区域经由所述出口排放工艺气体。
2.如权利要求1所述的系统，其中所述腔室主体的所述处理区域进一步由所述底座的边缘环来界定。
3.如权利要求2所述的系统，其中所述腔室主体的所述泵送区域进一步由间隔器环来界定。
4.如权利要求3所述的系统，其中所述泵送环、所述间隔器环、所述内衬垫以及所述外衬垫包括含有陶瓷的材料。
5.如权利要求3所述的系统，其中所述泵送环包括氧化铝(Al2O3)，所述间隔器环包括6061铝合金，所述内衬垫包括Al2O3和6061铝合金中的至少一个，并且所述外衬垫包括6061铝合金。
6.如权利要求1所述的系统，其中孔洞穿过所述泵送环形成，以允许来自所述处理区域的所述工艺气体流经所述泵送区域和所述泵送路径。
7.如权利要求1所述的系统，其中泵送区中的每一个泵送区控制所述处理区域的多个面积中的一个面积，每一个面积对应于所述底座的表面的区域。
8.如权利要求1所述的系统，其中每一个供应管道连接至通道，所述通道穿过所述腔室主体的间隔器环设置，其中每一个通道通往所述泵送区域。
9.如权利要求1所述的系统，其中所述处理区域的所述面积中的所述压力影响所述处理区域中的所述工艺气体的水平速度。
10.一种腔室，包括：
腔室盖；
腔室主体，所述腔室主体具有：
底座，所述底座设置于所述腔室主体中；
内衬垫，所述内衬垫耦合至泵送环，其中所述底座、所述内衬垫、所述泵送环以及所述腔室盖形成处理区域；以及
外衬垫，其中：
所述内衬垫和所述外衬垫形成具有入口和出口的泵送路径；并且
所述泵送环、所述内衬垫、所述外衬垫以及所述入口形成一泵送区域；以及
压力歪斜系统，所述压力歪斜系统具有：
两个或更多个壁，所述两个或更多个壁设置于所述泵送区域中，所述两个或更多个壁中的相邻壁设置于所述泵送区域中，在所述泵送区域中形成泵送区；以及
多个供应管道，其中每一个供应管道连接至所述相邻壁的对应的泵送区以及对应的流动控制装置。
11.如权利要求10所述的腔室，其中每一个流动控制装置经配置以控制提供至所述对应的泵送区的惰性气体的流率，以控制所述处理区域的面积中的压力并且从所述处理区域经由所述出口排放工艺气体。
12.如权利要求11所述的腔室，其中孔洞穿过所述泵送环形成，以允许来自所述处理区域的所述工艺气体流经所述泵送区域和所述泵送路径。
13.如权利要求10所述的腔室，其中所述腔室的所述处理区域进一步由所述底座的边缘环来界定，并且所述腔室的所述泵送区域进一步由间隔器环来界定。
14.如权利要求10所述的腔室，其中泵送区的每一个泵送区控制所述处理区域的多个面积中的一个面积，每一个面积对应于所述底座的表面的区域。
15.一种腔室，包括：
腔室盖；
腔室主体，所述腔室主体具有：
底座，所述底座设置于所述腔室主体中；
内衬垫，所述内衬垫耦合至泵送环，其中所述底座、所述内衬垫、所述泵送环以及所述腔室盖形成处理区域；以及
外衬垫，其中：
所述内衬垫和所述外衬垫形成具有入口和出口的泵送路径；并且
所述泵送环、所述内衬垫、所述外衬垫以及所述入口形成泵送区域；以及
压力歪斜系统，所述压力歪斜系统具有：
两个或更多个壁，所述两个或更多个壁设置于所述泵送区域中，所述两个或更多个壁中的相邻壁设置于所述泵送区域中，在所述泵送区域中形成泵送区；以及
多个供应管道，其中每一个供应管道流体地连接至所述泵送区的对应的泵送区以及对应的流动控制装置，其中每一个流动控制装置经配置以控制提供至所述对应泵送区的气体的流率，以控制所述处理区域的面积中的压力并且从所述处理区域经由所述出口排放工艺气体。
CN201980030059.6A 2018-05-04 2019-04-04 用于控制中心到边缘压力改变的压力歪斜系统 Pending CN112074624A (zh)

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