TW201947060A - 用於控制中心到邊緣壓力改變的壓力歪斜系統 - Google Patents

用於控制中心到邊緣壓力改變的壓力歪斜系統 Download PDF

Info

Publication number
TW201947060A
TW201947060A TW108115237A TW108115237A TW201947060A TW 201947060 A TW201947060 A TW 201947060A TW 108115237 A TW108115237 A TW 108115237A TW 108115237 A TW108115237 A TW 108115237A TW 201947060 A TW201947060 A TW 201947060A
Authority
TW
Taiwan
Prior art keywords
suction
area
chamber
processing
ring
Prior art date
Application number
TW108115237A
Other languages
English (en)
Inventor
夏蘭德 史維史達瓦
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201947060A publication Critical patent/TW201947060A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges

Abstract

此處所述的實施例相關於用於控制腔室中的中心到邊緣壓力改變的壓力歪斜系統，以用於沉積具有改良的整體均勻性的先進圖案化薄膜。壓力歪斜系統包含經配置以在腔室中形成的抽吸區、在抽吸區中設置的壁。腔室包含處理區域、抽吸區域、及連接至幫浦的抽吸路徑以排放來自抽吸區域的處理氣體。每一抽吸區對應至側面為壁的抽吸區域的空間。供應管道連接至對應抽吸區及對應質量流動控制裝置，以控制提供至對應抽吸區的惰性氣體的流動率，以控制處理區域的面積中的壓力。

Description

用於控制中心到邊緣壓力改變的壓力歪斜系統
本揭示案的實施例一般相關於具有設置於其中的壓力歪斜系統的化學氣相沉積腔室，以用於沉積具有改良的整體均勻性的先進的圖案化薄膜。
一般施用化學氣相沉積(CVD)及電漿增強化學氣相沉積(PECVD)以在基板(例如，半導體晶圓)上沉積先進的圖案化薄膜。一般藉由將處理氣體導入含有基板的腔室來達成CVD及PECVD。典型地經由坐落靠近腔室頂部的氣體擴散器向下引導處理氣體。在PECVD期間，藉由應用來自耦合至腔室的一或更多個射頻(RF)來源的RF功率至腔室，腔室中的處理氣體被賦能(例如，激發)成為電漿。
處理氣體的流動徑向(中心到邊緣)跨腔室中基板的表面分佈。大部分的處理氣體的流動流經氣體擴散器至腔室中心。在沿著氣體擴散器的點處的處理氣體具有下降流動至基板，接觸基板表面，接著具有平行於基板表面的流動。在氣體擴散器的每一點處，處理氣體具有對基板的垂直速度，以徑向向外跨基板的水平速度傳送至水平流動。在氣體擴散器的每一點處，處理氣體的垂直速度可不相等。因此，處理氣體的水平速度也可不相等，造成處理氣體在基板表面的部分上方的非均勻停留時間。非均勻停留時間導致跨基板的非均勻電漿分佈。處理氣體的非均勻停留時間及導致的非均勻電漿分佈造成先進圖案化薄膜的非均勻沉積。特定地，非均勻停留時間影響先進圖案化薄膜的平面性及殘留均勻性。
據此，所屬領域中所需要的是：用於控制處理氣體的停留時間的系統，以影響先進圖案化薄膜的平面性及殘留均勻性。
在一個實施例中，提供一種系統。該系統包含腔室蓋及腔室主體。該腔室主體具有：台座，該台座設置於該腔室主體中；內襯墊，該內襯墊耦合至抽吸環，及外襯墊。該台座、該內襯墊、該抽吸環、及該腔室蓋形成處理區域。該內襯墊及該外襯墊形成具有入口及出口的抽吸路徑。該抽吸環、該內襯墊、該外襯墊、及該入口形成抽吸區域。兩個或更多個壁設置於該抽吸區域中。該等兩個或更多個壁的相鄰壁設置於該抽吸區域中，在該抽吸區域中形成抽吸區。包含複數個供應管道。每一供應管道流體地連接至該等抽吸區的對應抽吸區及對應流動控制裝置。每一流動控制裝置經配置以控制提供至該對應抽吸區的氣體的流動率，以控制該處理區域的面積中的壓力且自該處理區域經由該出口排放處理氣體。
在另一實施例中，提供一種腔室。該腔室包含腔室蓋及腔室主體。該腔室主體具有：台座，該台座設置於該腔室主體中；內襯墊，該內襯墊耦合至抽吸環，及外襯墊。該台座、該內襯墊、該抽吸環、及該腔室蓋形成處理區域。該內襯墊及該外襯墊形成具有入口及出口的抽吸路徑。該抽吸環、該內襯墊、該外襯墊、及該入口形成抽吸區域。該腔室包含壓力歪斜系統。該壓力歪斜系統具有設置於該抽吸區域中的兩個或更多個壁及複數個供應管道。該等兩個或更多個壁設置於該抽吸區域中，該等兩個或更多個壁的相鄰壁設置於該抽吸區域中，在該抽吸區域中形成抽吸區。每一供應管道連接至相鄰壁的對應抽吸區及對應流動控制裝置。
而在另一實施例中，提供一種腔室。該腔室包含腔室蓋及腔室主體。該腔室主體具有：台座，該台座設置於該腔室主體中；內襯墊，該內襯墊耦合至抽吸環，及外襯墊。該台座、該內襯墊、該抽吸環、及該腔室蓋形成處理區域。該內襯墊及該外襯墊形成具有入口及出口的抽吸路徑。該抽吸環、該內襯墊、該外襯墊、及該入口形成抽吸區域。該腔室包含壓力歪斜系統。該壓力歪斜系統具有設置於該抽吸區域中的兩個或更多個壁及複數個供應管道。該等兩個或更多個壁設置於該抽吸區域中，該等兩個或更多個壁的相鄰壁設置於該抽吸區域中，在該抽吸區域中形成抽吸區。每一供應管道連接至相鄰壁的對應抽吸區及對應流動控制裝置。每一流動控制裝置經配置以控制提供至該對應抽吸區的氣體的流動率，以控制該處理區域的面積中的壓力且自該處理區域經由該出口排放處理氣體。
此處所述的實施例相關於用於控制腔室中的中心到邊緣壓力改變的壓力歪斜系統，以用於沉積具有改良的整體均勻性的先進圖案化薄膜。壓力歪斜系統包含經配置以在腔室中形成的抽吸區、在抽吸區域中設置的壁。腔室包含處理區域、抽吸區、及連接至幫浦的抽吸路徑以排放來自抽吸區域的處理氣體。每一抽吸區對應至側面為壁的抽吸區域的空間。供應管道連接至對應抽吸區及對應質量流動控制裝置，以控制提供至對應抽吸區的惰性氣體的流動率，以控制處理區域的面積中的壓力。
圖1A為具有壓力歪斜系統200設置於其中的化學氣相沉積(CVD)腔室100的示意橫截面視圖。腔室100的一個範例為由位於加州Santa Clara的Applied Materials Inc.所製造的PRODUCER® 腔室或XP PRECISIONTM 腔室。腔室100具有腔室主體102及腔室蓋104。腔室主體包含處理容積106及抽吸容積108。處理容積106為由腔室蓋104、抽吸環118(也稱為外隔絕器)、內抽吸襯墊120、底部抽吸板122、及底部加熱器124所界定的空間。內抽吸襯墊120耦合至抽吸環118及底部抽吸板122。底部抽吸板122耦合至底部加熱器124以界定處理容積106。處理容積106具有台座126以用於支撐腔室100內的基板(未展示)。台座126典型地包含加熱元件(未展示)。可移動地藉由主幹128將台座126設置於處理容積106中，主幹128延伸穿過底部加熱器124及腔室主體102。主幹128連接至升降系統130，升降系統130在升高處理位置(未展示)及降低位置之間移動台座126，該降低位置便於基板經由狹縫閥132傳送至處理容積106及自處理容積106傳送，穿過此處詳細描述的腔室主體102及抽吸容積108而形成狹縫閥132。升高處理位置對應至由腔室蓋104、台座126、台座126的邊緣環134、內抽吸襯墊120、及抽吸環118所界定的處理區域110。
抽吸容積108包含抽吸區域112及抽吸路徑114。抽吸區域112為由抽吸環118、間隔器環136、內抽吸襯墊120、及抽吸路徑114的入口138所界定的空間。抽吸路徑114為由抽吸路徑114的入口138、耦合至腔室主體102的外抽吸襯墊140、底部加熱器124、及穿過底部加熱器124及腔室主體102設置的出口所界定的空間。抽吸路徑114的出口142經由管道146連接至幫浦144。在可與此處所述的其他實施例組合的一個實施例中，抽吸環118、間隔器環136、內抽吸襯墊120、外抽吸襯墊140、底部抽吸板122、及底部加熱器124包含含有陶瓷的材料。在可與此處所述的其他實施例組合的另一實施例中，抽吸環118包含氧化鋁(Al2 O3 )，間隔器環包含6061鋁合金，內抽吸襯墊120包含Al2 O3 及/或6061鋁合金，外抽吸襯墊140包含6061鋁合金，底部抽吸板122包含Al2 O3 ，且底部加熱器124包含6061鋁合金。抽吸環118包含孔洞148(在圖1C及圖2中展示)以允許幫浦144控制處理區域110內的壓力及自處理區域110經由抽吸區域112及抽吸路徑114排放氣體及副產物。如圖1C中所展示，腔室100的橫截面視圖展示抽吸環118的孔洞148，穿過抽吸環118形成孔洞148，以允許自處理區域110排放氣體及副產物以流經抽吸區域112及抽吸路徑114。抽吸環118允許來自處理區域110的氣體以促進腔室100內的處理的方式流動至抽吸容積108。在一個實施例中，處理區域110內的整體壓力為約3 torr至約5 torr。然而，也思量其他壓力。
腔室100也包含耦合至腔室蓋104的氣體分配組件116，以輸送一或更多個氣體的流動進入處理區域110。氣體分配組件116包含耦合至在腔室蓋104中形成的氣體入口通路154的氣體分歧管150以接收來自一或更多個氣體來源152的氣體流動。氣體流動跨氣體盒156分配，流經背板160的複數個孔洞158，進一步跨由背板160及面板162所界定的充氣部168分配，且經由面板162的複數個孔洞(未展示)流入處理區域110。RF(射頻)來源164耦合至氣體分配組件116。RF來源164對氣體分配組件116供電以便於在處理區域110中自氣體產生電漿。在連接至電源供應器時，台座126接地或台座126可作用如同陰極以在面板162及台座126之間產生電容性電場以朝向基板加速電漿物質來沉積先進圖案化薄膜。控制器101耦合至腔室100及腔室100的壓力歪斜系統200。控制器101經配置以控制處理期間腔室100及壓力歪斜系統200的態樣。
氣體的流動在處理區域110中徑向(中心到邊緣)跨基板表面分配。在可與此處所述的其他實施例組合的一個實施例中，氣體的流動大部分流經面板162至處理區域110的中心。沿著面板162的點處的氣體具有下降流動至基板，接觸基板表面，且具有平行於基板表面的流動。在面板162的每一點處，氣體具有對基板的垂直速度，以徑向向外跨基板的水平速度傳送至水平流動。幫浦144排放氣體經過抽吸環118、抽吸區域112、及抽吸路徑114，而導致跨基板的壓力上的中心到邊緣改變。在面板162的每一點處，氣體的垂直速度可不相等。因此，氣體的水平速度不相等，造成氣體在基板表面的部分上的非均勻停留時間。非均勻停留時間導致跨基板的非均勻電漿分配。氣體的非均勻停留時間及導致的非均勻電漿分配造成先進圖案化薄膜的非均勻沉積。特定地，非均勻停留時間影響先進圖案化薄膜的平面性及殘留均勻性。因此，腔室100包含壓力歪斜系統200以控制跨基板的中心到邊緣壓力改變以控制平面性及殘留均勻性。
圖2為用於控制處理腔室(例如腔室100)中的中心到邊緣壓力改變的壓力歪斜系統200的示意頂部視圖。壓力歪斜系統200包含至少兩個抽吸區。在可與此處所述的其他實施例組合的一個實施例中，壓力歪斜系統200(如所展示)包含四個抽吸區202a至202d。壓力歪斜系統200包含視需求般多的抽吸區以導致先進圖案化薄膜的平面性及殘留均勻性。抽吸區202a至202d之每一抽吸區連接至分歧管204，分歧管204連接至惰性氣體供應206。抽吸區202a至202d之每一抽吸區藉由複數個供應管道208連接至分歧管204。每一供應管道208具有流動控制裝置210，例如質量流動控制(MFC)裝置，以精確地控制自分歧管204提供至抽吸區202a至202d之抽吸區的一者的惰性氣體(例如氮氣(N2 )、氫氣(H2 )、氬(Ar)、及氦(He))的流動率。如圖1A中所展示，每一供應管道208連接至通道166，穿過前往抽吸區域112的間隔器環136設置通道166。抽吸區202a至202d之每一抽吸區對應至側面為設置於抽吸區域112中的壁212的抽吸區域112的空間(如圖1B中所展示)。
圖1B為具有壓力歪斜系統200設置於其中的腔室100的另一示意橫截面視圖，展示設置於抽吸區域112中的壁212。設置於抽吸區域112中的壁212界定抽吸區域112中的抽吸區202a至202d之每一抽吸區。界定抽吸區202a至202d之每一抽吸區的壁212允許獨立地控制每一抽吸區中的壓力，因為氣體無法流經抽吸環118的孔洞148而進入抽吸區域112及流經被壁212阻斷的抽吸路徑114。抽吸區202a至202d之每一抽吸區可具有提供至抽吸區域212的惰性氣體的流動率，以控制處理區域110的面積中的壓力改變，以影響跨基板的氣體的水平速度，而進一步控制所沉積的先進圖案化薄膜的平面性及殘留均勻性，因而控制所沉積的先進圖案化薄膜的整體均勻性。
返回參考圖2，抽吸區202a至202d之每一抽吸區控制處理區域110的面積214a至214d。面積214a至214d之每一面積對應至基板表面的一區域。例如，為了減少跨處理區域110的面積214a的氣體的水平速度且增加基板表面的區域上方的氣體停留時間，流動控制裝置210控制自分歧管204提供至抽吸區202a的惰性氣體的流動率。提供至抽吸區202a的惰性氣體的流動率設定抽吸區域112中的壓力而控制處理區域110的面積214a中的中心到邊緣的壓力改變。在可與此處所述的其他實施例組合的一個實施例中，處理區域110的面積214a至214d中的中心到邊緣的壓力改變較處理區域110內的整體壓力大或小約1 torr至約2 torr。在可與此處所述的其他實施例組合的一個實施例中，增加惰性氣體的流動率導致減少的水平速度及增加的基板表面的區域上方的停留時間(對應至面積214a至214d)。在可與此處所述的其他實施例組合的另一實施例中，減少惰性氣體的流動率導致增加的水平速度及減少的基板表面的區域上方的停留時間(對應至面積214a至214d)。最佳化提供至抽吸區202a至202d之每一抽吸區的流動率，以控制處理區域110的每一面積214a至214d中的中心到邊緣的壓力改變，以改良所沉積的先進圖案化薄膜的整體均勻性。
綜上所述，此處描述用於在CVD腔室中控制中心到邊緣的壓力改變的壓力歪斜系統，以用於沉積具有改良的整體均勻性的先進圖案化薄膜(例如，含碳或硼摻雜碳的硬遮罩)。使用具有至少兩個抽吸區的壓力歪斜系統，其中每一抽吸區連接至分歧管至具有MFC裝置的惰性氣體供應以精確地控制提供至每一抽吸區的惰性氣體的流動率。提供至每一抽吸區的惰性氣體的流動率控制處理區域的面積中的壓力改變，以影響跨基板的氣體的水平速度，這繼而控制所沉積的先進圖案化薄膜的平面性及殘留均勻性，因而控制所沉積的先進圖案化薄膜的整體均勻性。
儘管前述涉及本揭示案的範例，可設計本揭示案的其他及進一步的範例而不脫離其基本範圍，且其範圍由隨後的申請專利範圍所決定。
100‧‧‧腔室
101‧‧‧控制器
102‧‧‧腔室主體
104‧‧‧腔室蓋
106‧‧‧處理容積
108‧‧‧抽吸容積
110‧‧‧處理區域
112‧‧‧抽吸區域
114‧‧‧抽吸路徑
116‧‧‧氣體分配組件
118‧‧‧抽吸環
120‧‧‧內抽吸襯墊
122‧‧‧底部抽吸板
124‧‧‧底部加熱器
126‧‧‧台座
128‧‧‧主幹
130‧‧‧升降系統
132‧‧‧狹縫閥
134‧‧‧邊緣環
136‧‧‧間隔器環
138‧‧‧入口
140‧‧‧外抽吸襯墊
142‧‧‧出口
144‧‧‧幫浦
146‧‧‧管道
148‧‧‧孔洞
150‧‧‧氣體分歧管
152‧‧‧氣體來源
154‧‧‧氣體入口通路
156‧‧‧氣體盒
158‧‧‧孔洞
160‧‧‧背板
162‧‧‧面板
164‧‧‧RF來源
166‧‧‧通道
168‧‧‧充氣部
200‧‧‧壓力歪斜系統
202a-d‧‧‧抽吸區
204‧‧‧分歧管
206‧‧‧惰性氣體供應
208‧‧‧供應管道
210‧‧‧流動控制裝置
212‧‧‧壁/抽吸區域
214a-d‧‧‧面積
於是可以詳細理解本揭示案上述特徵中的方式，可藉由參考實施例而具有本揭示案的更特定描述(簡短總結如上)，其中一些圖示於所附圖式中。然而，注意所附圖式僅圖示示範的實施例，因此不考慮限制其範圍，因為可允許其他等效實施例。
圖1A為根據一實施例的具有壓力歪斜系統設置於其中的化學氣相沉積腔室的示意橫截面視圖。
圖1B為根據一實施例的具有壓力歪斜系統設置於其中的化學氣相沉積腔室的示意橫截面視圖。
圖1C為根據一實施例的具有壓力歪斜系統設置於其中的化學氣相沉積腔室的示意橫截面視圖。
圖2為根據一實施例的壓力歪斜系統的示意頂部視圖。
為了便於理解，儘可能使用相同元件符號，以標示圖式中共用的相同元件。思量一個實施例的元件及特徵可有利地併入其他實施例中，而無須進一步敘述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記)
無

Claims (20)

  1. 一種系統，包括： 一腔室蓋；一腔室主體，該腔室主體具有：一台座，該台座設置於該腔室主體中；一內襯墊，該內襯墊耦合至一抽吸環，其中該台座、該內襯墊、該抽吸環、及該腔室蓋形成一處理區域；及一外襯墊，其中：該內襯墊及該外襯墊形成具有一入口及一出口的一抽吸路徑；及該抽吸環、該內襯墊、該外襯墊、及該入口形成一抽吸區域；兩個或更多個壁，該等兩個或更多個壁設置於該抽吸區域中，該等兩個或更多個壁的相鄰壁設置於該抽吸區域中，在該抽吸區域中形成抽吸區；及複數個供應管道，其中每一供應管道流體地連接至該等抽吸區的一對應抽吸區及一對應流動控制裝置，其中每一流動控制裝置經配置以控制提供至該對應抽吸區的一氣體的一流動率，以控制該處理區域的一面積中的一壓力且自該處理區域經由該出口排放處理氣體。
  2. 如請求項1所述之系統，其中進一步由該台座的一邊緣環來界定該腔室主體的該處理區域。
  3. 如請求項2所述之系統，其中進一步由一間隔器環來界定該腔室主體的該抽吸區域。
  4. 如請求項3所述之系統，其中該抽吸環、該間隔器環、該內襯墊、及該外襯墊包含含有陶瓷的材料。
  5. 如請求項3所述之系統，其中該抽吸環包含氧化鋁(Al2 O3 )，該間隔器環包含6061鋁合金，該內襯墊包含Al2 O3 及6061鋁合金之至少一者，且該外襯墊包含6061鋁合金。
  6. 如請求項1所述之系統，其中穿過該抽吸環形成孔洞，以允許來自該處理區域的該等處理氣體流經該抽吸區域及該抽吸路徑。
  7. 如請求項1所述之系統，其中抽吸區的每一抽吸區控制該處理區域的複數個面積的一個面積，每一面積對應至該台座的一表面的一區域。
  8. 如請求項1所述之系統，其中每一供應管道連接至一通道，穿過該腔室主體的一間隔器環設置該通道，其中每一通道前往該抽吸區域。
  9. 如請求項1所述之系統，其中該處理區域的該面積中的該壓力影響該處理區域中的該等處理氣體的一水平速度。
  10. 一種腔室，包括： 一腔室蓋；一腔室主體，該腔室主體具有：一台座，該台座設置於該腔室主體中；一內襯墊，該內襯墊耦合至一抽吸環，其中該台座、該內襯墊、該抽吸環、及該腔室蓋形成一處理區域；及一外襯墊，其中：該內襯墊及該外襯墊形成具有一入口及一出口的一抽吸路徑；及該抽吸環、該內襯墊、該外襯墊、及該入口形成一抽吸區域；及一壓力歪斜系統，該壓力歪斜系統具有：兩個或更多個壁，該等兩個或更多個壁設置於該抽吸區域中，該等兩個或更多個壁的相鄰壁設置於該抽吸區域中，在該抽吸區域中形成抽吸區；及複數個供應管道，其中每一供應管道連接至該等相鄰壁的一對應抽吸區及一對應流動控制裝置。
  11. 如請求項10所述之腔室，其中每一流動控制裝置經配置以控制提供至該對應抽吸區的惰性氣體的一流動率，以控制該處理區域的一面積中的一壓力且自該處理區域經由該出口排放處理氣體。
  12. 如請求項11所述之腔室，其中穿過該抽吸環形成孔洞，以允許來自該處理區域的該等處理氣體流經該抽吸區域及該抽吸路徑。
  13. 如請求項10所述之腔室，其中進一步由該台座的一邊緣環來界定該腔室的該處理區域，且進一步由一間隔器環來界定該腔室的該抽吸區域。
  14. 如請求項10所述之腔室，其中抽吸區的每一抽吸區控制該處理區域的複數個面積的一個面積，每一面積對應至該台座的一表面的一區域。
  15. 如請求項10所述之腔室，其中該複數個供應管道可連接至一分歧管，該分歧管可連接至一惰性氣體供應。
  16. 如請求項10所述之腔室，其中每一流動控制裝置為一質量流動控制(MFC)裝置。
  17. 一種腔室，包括： 一腔室蓋；一腔室主體，該腔室主體具有：一台座，該台座設置於該腔室主體中；一內襯墊，該內襯墊耦合至一抽吸環，其中該台座、該內襯墊、該抽吸環、及該腔室蓋形成一處理區域；及一外襯墊，其中：該內襯墊及該外襯墊形成具有一入口及一出口的一抽吸路徑；及該抽吸環、該內襯墊、該外襯墊、及該入口形成一抽吸區域；及一壓力歪斜系統，該壓力歪斜系統具有：兩個或更多個壁，該等兩個或更多個壁設置於該抽吸區域中，該等兩個或更多個壁的相鄰壁設置於該抽吸區域中，在該抽吸區域中形成抽吸區；及複數個供應管道，其中每一供應管道流體地連接至該等抽吸區的一對應抽吸區及一對應流動控制裝置，其中每一流動控制裝置經配置以控制提供至該對應抽吸區的一氣體的一流動率，以控制該處理區域的一面積中的一壓力且自該處理區域經由該出口排放處理氣體。
  18. 如請求項17所述之腔室，其中該處理區域的該面積中的該壓力影響該處理區域中的該等處理氣體的一水平速度。
  19. 如請求項17所述之腔室，其中穿過該抽吸環形成孔洞，以允許來自該處理區域的該等處理氣體流經該抽吸區域及該抽吸路徑。
  20. 如請求項17所述之腔室，其中抽吸區的每一抽吸區控制該處理區域的複數個面積的一個面積，每一面積對應至該台座的一表面的一區域。
TW108115237A 2018-05-04 2019-05-02 用於控制中心到邊緣壓力改變的壓力歪斜系統 TW201947060A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862667050P 2018-05-04 2018-05-04
US62/667,050 2018-05-04

Publications (1)

Publication Number Publication Date
TW201947060A true TW201947060A (zh) 2019-12-16

Family

ID=68383780

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108115237A TW201947060A (zh) 2018-05-04 2019-05-02 用於控制中心到邊緣壓力改變的壓力歪斜系統

Country Status (7)

Country Link
US (1) US20190338420A1 (zh)
JP (1) JP2021523556A (zh)
KR (1) KR20200140390A (zh)
CN (1) CN112074624A (zh)
SG (1) SG11202010036PA (zh)
TW (1) TW201947060A (zh)
WO (1) WO2019212685A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220018024A1 (en) * 2020-07-19 2022-01-20 Applied Materials, Inc. Multi-stage pumping liner
US11427910B2 (en) * 2020-10-20 2022-08-30 Sky Tech Inc. Atomic layer deposition equipment capable of reducing precursor deposition and atomic layer deposition process method using the same
TW202302907A (zh) * 2021-05-12 2023-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 化學氣相沉積設備及膜形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3386651B2 (ja) * 1996-04-03 2003-03-17 株式会社東芝 半導体装置の製造方法および半導体製造装置
US5846332A (en) * 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US6645884B1 (en) * 1999-07-09 2003-11-11 Applied Materials, Inc. Method of forming a silicon nitride layer on a substrate
WO2003062490A2 (en) * 2002-01-17 2003-07-31 Sundew Technologies, Llc Ald apparatus and method
US20040069227A1 (en) * 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US20070012402A1 (en) * 2003-07-08 2007-01-18 Sundew Technologies, Llc Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
KR20060063188A (ko) * 2004-12-07 2006-06-12 삼성전자주식회사 화학기상증착장치 및 그를 이용한 화학기상증착방법
JP4790291B2 (ja) * 2005-03-10 2011-10-12 東京エレクトロン株式会社 基板処理方法、記録媒体および基板処理装置
US20090084317A1 (en) * 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
US9725799B2 (en) * 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components

Also Published As

Publication number Publication date
SG11202010036PA (en) 2020-11-27
JP2021523556A (ja) 2021-09-02
WO2019212685A1 (en) 2019-11-07
US20190338420A1 (en) 2019-11-07
CN112074624A (zh) 2020-12-11
KR20200140390A (ko) 2020-12-15

Similar Documents

Publication Publication Date Title
CN108070846B (zh) 气体供应单元及包括气体供应单元的基板处理装置
TWI671792B (zh) 基板處理設備
KR20210013634A (ko) 프로세싱 챔버 내에서의 퍼징 및 플라스마 억제를 위한 방법 및 장치
CN104250728B (zh) 具有气封的化学沉积腔室
TWI693100B (zh) 噴頭組件及處理腔室
TWI745528B (zh) 用於低溫氮化矽膜的方法及設備
TW201947060A (zh) 用於控制中心到邊緣壓力改變的壓力歪斜系統
US11492705B2 (en) Isolator apparatus and methods for substrate processing chambers
TW201742948A (zh) Pecvd微晶矽鍺(sige)
CN106688078A (zh) 用于电介质膜的基于自由基的沉积的装置
TW201923953A (zh) 具有空間分離的單個晶圓處理環境
US20220307135A1 (en) Hardware to prevent bottom purge incursion in application volume and process gas diffusion below heater
JP2019114692A (ja) 成膜方法
TWI691607B (zh) 濺射噴淋頭
TW201802990A (zh) 用於晶圓釋氣的電漿增強式退火腔室
TW202200817A (zh) 高溫化學氣相沉積蓋
US20210032753A1 (en) Methods and apparatus for dual channel showerheads
KR102623770B1 (ko) 성막 방법
TW202104650A (zh) 在處理腔室內的電漿緻密化
WO2017149739A1 (ja) プラズマ処理装置及びプラズマ処理用反応容器の構造
TW202129800A (zh) 用於沉積腔室的氣體分佈陶瓷加熱器
WO2017149738A1 (ja) プラズマ処理装置及びプラズマ処理用反応容器の構造
KR101984997B1 (ko) 수평 흐름 원자층 증착 장치 및 원자층 증착 방법
US20230402261A1 (en) Uniform in situ cleaning and deposition
KR20210114552A (ko) ALD (Atomic Layer Deposition) 기판 프로세싱 챔버들의 막 특성들을 조절하기 위한 페데스탈들