TWI672394B - 噴淋頭總成及其組件 - Google Patents

噴淋頭總成及其組件 Download PDF

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TWI672394B
TWI672394B TW104122890A TW104122890A TWI672394B TW I672394 B TWI672394 B TW I672394B TW 104122890 A TW104122890 A TW 104122890A TW 104122890 A TW104122890 A TW 104122890A TW I672394 B TWI672394 B TW I672394B
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卡爾 懷特
艾瑞克 席羅
傑瑞德 李 威克勒
大衛 馬夸特
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荷蘭商Ａｓｍ智慧財產控股公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

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Abstract

本發明揭露噴淋頭總成、氣體分配板，以及包括該等噴淋頭總成、該等氣體分配板之系統。示範性噴淋頭總成包括氣體分配板。示範性氣體分配板包括孔隙，該等孔隙經設計來引導氣體之流動且減少氣體在該等板之表面上的停滯。

Description

噴淋頭總成及其組件
本發明大體而言係關於氣相反應器。更特定而言，本發明係關於用於氣相反應器之氣體分配系統，並且係關於氣體分配系統之組件。
諸如化學氣相沈積(CVD)、電漿增強CVD(PECVD)、原子層沈積(ALD)及其類似者之氣相反應器可用於多種應用，該等應用包括在基板表面上沈積材料及蝕刻材料。例如，氣相反應器可用來在基板上沈積及/或蝕刻多個層以形成半導體裝置、平板顯示裝置、光伏打裝置、微機電系統(MEMS)及其類似者。
典型的氣相反應器系統包括：反應器，其包括反應腔室；一或多個前驅氣體源，其流體耦接至反應腔室；一或多個載體氣體源或沖洗氣體源，其流體耦接至反應腔室；氣體分配系統，其用來向基板之表面輸送氣體(例如，前驅氣體及/或載體氣體或沖洗氣體)；以及排氣源，其流體耦接至反應腔室。該系統亦通常包括基座，其用來在處理期間將基板保持在適當位置。基座可經組配來上下移動以接納基板且/或可在基板處理期間旋轉。
氣體分配系統可包括噴淋頭總成，其用於向基板之表面分配氣體。噴淋頭總成通常位於基板上方。在基板處理期間，氣體在向下的方 向上從噴淋頭總成朝基板流動，然後在基板上徑向向外流動。典型的噴淋頭總成包括氣體分配板，該氣體分配板具有與分配板之一個表面相鄰的腔室以及跨在腔室與分配板之分配表面(基板側)之間的複數個孔隙。孔隙之形狀大體上為圓柱形，並且相互間隔開，在分配板之腔室側表面及分配表面兩者上留下很大的水平部分。
當氣體穿過分配板從腔室朝基板流動時，氣體可在分配板之水平表面上停留。此停留可使氣體難以沖洗掉，即，可能需要額外的時間及/或減小的真空壓力來將氣體從水平表面沖洗掉。額外的時間及/或減小的真空壓力需求可增加與沖洗氣體相關聯的成本及時間。此外，停留的氣體可在基板處理期間形成於分配表面上的膜中造成應力。相比非應力膜或更小應力膜，應力膜可能必須更頻繁地從分配表面清除。當應力膜起泡並破裂時，應力膜亦可能產生粒子。產生的粒子又可能落在基板之表面上，並且在使用基板所形成之裝置中產生缺陷。此外，氣體在該表面上的延長時間可促成對某些前驅物之過度分解，從而可能導致不合需要的副作用，諸如粒子或低劣的膜品質。因此，需要改良之噴淋頭總成及分配板。
本發明之各種實施例係關於氣體分配系統、氣體分配系統組件、包括氣體分配系統之氣相反應器系統，並且係關於使用氣體分配系統及反應器系統之方法。雖然以下更詳細地論述本發明之各種實施例解決先前氣體分配系統及反應器系統之缺點的方法，但通常，示範性氣體分配系統包括複數個孔隙，其中該等孔隙經組配來減少垂直於氣流之分配板(例如，噴淋頭氣體分配系統之分配板)上之表面積的量，從而減少氣體分配 系統內允許氣體停留之面積。與傳統的板、總成及系統相比，示範性氣體分配系統、總成及分配板對於給定數目之處理運行產生更少的粒子，需要更少的沖洗時間及/或更少的真空來沖洗反應器，且/或允許清除之間更多的運行。
根據本發明之示範性實施例，用於在反應腔室內分配氣體之噴淋頭總成包括：氣體分配板；在總成內形成之腔室，該腔室與氣體分配板之第一表面相鄰；以及複數個孔隙，該等孔隙從腔室延伸至分配表面。根據此等實施例之各方面，孔隙中之一或多個包括：第一區段，其包含與第一表面接觸之第一區段第一端、第一區段第二端以及兩者之間的第一區段錐形壁，其中第一區段第一端之橫截面積大於第一區段第二端之橫截面積；導管，其包含流體耦接至第一區段第二端之導管第一端以及導管第二端；以及第二區段，其包含與第二表面接觸之第二區段第一端、流體耦接至導管第二端之第二區段第二端，以及兩者之間的第二區段錐形壁，其中第二區段第一端之橫截面積大於第二區段第二端之橫截面積。根據另外的示範性實施例，第一區段、導管以及第二區段共用共同軸線。根據另外的方面，孔隙之長度及寬度經組配來在腔室與反應腔室之間提供適合的壓力差。舉例而言，孔隙之長度可大於約1mm，且/或可處於約1mm至約50mm，或約10mm至約40mm，或約20mm至約30mm之範圍內。示範性孔隙經組配來促進在導管之方向上(例如，在氣體進入腔室及/或從分配板退出之方向上)的氣流，且/或經組配來減少垂直於氣流之表面積，以便將氣體停滯點減至最少。為促進在所需方向上引導氣流，第一區段及/或第二區段可包括連續錐形之側壁，例如，側壁可為截頭圓錐形、截頭錐形、半球形或 類似的形狀。
根據本發明之另外的示範性實施例，分配板包括第一表面、第二表面，以及跨在第一表面與第二表面之間的複數個孔隙。孔隙可具有如本文所述之結構及形狀，其包括上述結構及形狀。
根據本發明之另外的示範性實施例，氣相反應器包括噴淋頭總成，該噴淋頭總成包括如本文所描述之氣體分配板。
根據本發明之另外的示範性實施例，氣體分配系統包括噴淋頭總成及/或如本文所描述之氣體分配板。
α‧‧‧角度
θ‧‧‧角度
a‧‧‧間距
b‧‧‧間距
c‧‧‧間距
102‧‧‧氣體分配板
104‧‧‧圓柱形孔隙
106‧‧‧區域
108‧‧‧膜
110‧‧‧氣泡
200‧‧‧噴淋頭總成
202‧‧‧氣體分配板
204‧‧‧孔隙
206‧‧‧腔室
208‧‧‧板
210‧‧‧進氣口
212‧‧‧基板
302‧‧‧第一表面
304‧‧‧第二表面
306‧‧‧凹入部
402‧‧‧第一區段
404‧‧‧第二區段
406‧‧‧導管
502‧‧‧第一區段第一端
504‧‧‧第一區段第二端
506‧‧‧第一區段錐形壁
508‧‧‧第二區段第一端
510‧‧‧第二區段第二端
512‧‧‧第二區段錐形壁
514‧‧‧導管第二端
516‧‧‧導管第一端
602‧‧‧軸線
604‧‧‧軸線
606‧‧‧軸線
608‧‧‧軸線
700‧‧‧噴淋頭
702‧‧‧第一腔室
704‧‧‧第二腔室
706‧‧‧第一氣體分配板
708‧‧‧第二氣體分配板
710‧‧‧第一孔隙
712‧‧‧第二孔隙
714‧‧‧第一入口
716‧‧‧第一入口
718‧‧‧基座
720‧‧‧第二入口
722‧‧‧反應腔室
當結合以下說明性圖考慮時，藉由參考詳細描述及申請專利範圍，可得出對本發明之示範性實施例之更完整理解。
圖1說明先前技術分配板之表面，該表面上具有剝離膜。
圖2說明根據本發明之示範性實施例之噴淋頭總成。
圖3(a)至圖3(c)說明根據本發明之示範性實施例之分配板。
圖4說明根據本發明之示範性實施例之分配板的剖面圖。
圖5說明根據本發明之示範性實施例之分配板的另一剖面圖。
圖6說明分配板之一部分之平面圖，該平面圖說明根據本發明之示範性實施例之孔隙。
圖7說明根據本發明之額外示範性實施例之另一噴淋頭總成。
應理解，圖中元件係為了簡單及清晰加以說明，並且未必係 按比例繪製。例如，圖中元件中之一些的尺寸可能相對於其他元件誇大，以有助於改良對本發明之所說明實施例的理解。
以下提供之示範性實施例之描述僅僅係示範性的，並且僅意欲用於說明目的；以下描述不欲限制本發明或申請專利範圍之範疇。此外，對具有所陳述特徵之多個實施例之敘述不欲排除具有額外特徵之其他實施例或併入所陳述特徵的不同組合之其他實施例。
本發明大體而言係關於氣體分配系統、氣體分配系統之噴淋頭總成、氣體分配系統之分配板、包括該等氣體分配系統之反應器系統，並且係關於使用該等氣體分配系統、噴淋頭總成、分配板以及反應器系統之方法。如本文所描述之氣體分配系統、噴淋頭總成、氣體分配板以及反應器系統可用來在諸如化學汽相沈積(CVD)反應器之氣相反應器中處理諸如半導體晶圓之基板，該等CVD反應器包括電漿增強CVD(PECVD)反應器、低壓CVD(LPCVD)反應器、原子層沈積(ALD)反應器及其類似者。舉例而言，本文所描述之總成及組件可用於噴淋頭型氣相反應器系統中，其中氣體通常在向下的方向上從噴淋頭流動並且朝基板流動。此類系統通常係冷壁型反應器，其中例如經由基板支撐件或基座來加熱基板。
典型的噴淋頭總成包括氣體分配板102，該氣體分配板102包括形成於其中的複數個圓柱形孔隙104，如圖1中所說明。在包括分配板102之反應器系統的操作期間，材料沈積至分配板102之表面上。例如，當使用包括分配板102之噴淋頭將材料沈積至基板上時，材料亦可沈積至分配板之表面上。
氣體分配板102包括介於孔隙之間的實質區域(例如，區域106)。區域106大體垂直於退出氣體分配板102之氣流之方向。氣體可在氣體分配板102之區域106上及/或在氣體分配板之噴淋頭腔室側上的介於孔隙之間的對應區域中積聚並停留。當氣體在氣體分配板102之噴淋頭腔室側上停留時，停留的氣體可能相對難以去除，從而需要額外的沖洗時間、額外的真空或其類似者。類似地，當氣體在氣體分配板之沈積側上停留時，氣體可能相對難以去除，從而需要額外的沖洗時間及/或真空。額外的沖洗時間及/或真空需求增加了與處理基板相關聯的成本。另外，在沈積製程的情況下，當允許氣體在區域106(在分配板102之沈積側上)上駐留較長一段時間時，在氣體分配板102之沈積側上形成的膜108可受到應力，從而導致氣泡110，該等氣泡110可能形成在沈積於基板上之膜中造成缺陷的微粒。此外，氣體在表面上停留較長一段時間可促成對某些前驅物之過度分解，從而可能導致不合需要的副作用，諸如粒子或低劣的膜品質。
圖2說明根據本發明之示範性實施例之示範性噴淋頭總成200。噴淋頭總成200包括：氣體分配板202，該氣體分配板202包括複數個孔隙204；以及腔室或區206。噴淋頭總成200亦可包括頂部板208及進氣口210。
在操作期間，一或多種沖洗氣體及/或一或多種前驅物及/或反應物穿過進氣口210流動至腔室206，並且穿過孔隙204朝基板212流動。在所說明之實例中，進氣口210及孔隙204中氣體之流動方向係大體上垂直的，即，大體上(例如，在五度之內)垂直於基板212之表面。此允許氣體在基板之表面上相對均勻的分配。
現在轉向圖3(a)至圖6，更詳細地說明示範性氣體分配板202。圖3(a)說明氣體分配板202之俯視圖或腔室側視圖，圖3(b)說明氣體分配板202之側視圖，圖3(c)說明氣體分配板202之仰視圖或沈積側表面視圖，圖4說明氣體分配板202之透視剖面圖，圖5說明氣體分配板202之側剖面圖，且圖6說明氣體分配板202之局部俯視圖。
氣體分配板202包括第一(腔室側)表面302、第二(沈積側)表面304，以及跨在第一表面302與第二表面304之間的複數個孔隙204。示範性氣體分配板亦包括凹入部306，其用來接納諸如墊圈(例如，彈性O形環)之密封件，以促進在氣體分配板202與第二板208之間形成封閉，從而形成與第一表面302相鄰的腔室206。氣體分配板之厚度可介於約1mm至50mm、約10mm至約40mm，或約20mm至約30mm之間。
圖4及圖5更詳細地說明示範性孔隙204。孔隙204包括三個區段：第一區段402、第二區段404，以及跨在第一區段402與第二區段404之間的導管406。與典型的氣體分配板相比，第一區段402及第二區段404經設計來分別減少垂直於朝基板(例如，基板212)之氣流方向的第一表面302及第二表面304上之表面積的量。此減少了氣體可停滯的面積。另外，第一區段402及第二區段404經設計來促進在大體上垂直於基板表面之方向上的氣流。導管406經組配來在腔室206與基板之間提供所需的氣流，同時亦在第一表面302與第二表面304之間提供足夠的壓力差，以防止或減輕氣體從反應腔室流動至腔室206。穿過氣體分配板之孔隙之數目可取決於例如分配板的大小。氣體分配板上之孔隙的示範性數目處於約100至約1500，約200至約1000，或約500至約900之範圍內。
第一區段402包括與第一表面302接觸之第一區段第一端502、與導管第一端516接觸之第一區段第二端504，以及兩者之間的第一區段錐形壁506，其中第一區段第一端502之橫截面積大於第一區段第二端504之橫截面積。錐形壁506可為連續錐形的，諸如線性錐形(例如截頭錐形或截頭圓錐形形狀)，或包括曲率，諸如局部球形或局部橢球體。導管406可包括沿著軸線的縮小橫截面積。舉例來說，導管406的形狀可為圓柱形的。
第一區段第一端502之橫截面尺寸(例如，第一端502在垂直於貫穿第一端502之軸線之方向上的最大尺寸)可處於約3mm至約30mm，或約5mm至約20mm，或約8mm至約10mm之範圍內。第一區段第二端504之橫截面尺寸對應於導管406之橫截面積，以下對其進行更詳細論述。
錐形壁506之相對側之間的角度θ可處於約30°至小於90°，約45°至約88°，約60°至約85°之範圍內，或約為82°。第一區段(及/或第二區段)沿著軸線之長度可處於約0.25mm至約20mm，約1mm至約10mm，或約3mm至約7mm之範圍內。
類似地，第二區段404包括與第二表面304接觸之第二區段第一端508、流體耦接至導管(例如，導管406)第二端514之第二區段第二端510，以及兩者之間的第二區段錐形壁512，其中第二區段第一端之橫截面積大於第二區段第二端之橫截面積。第二區段第一端508、第二區段第二端510以及第二區段錐形壁512之尺寸及形狀可與第一區段402之對應區段相同或相似。例如，第二區段第一端508之橫截面寬度可處於約3mm至約30mm，或約5mm至約20mm，或約8mm至約10mm之範圍內，並且第二區段第二端510之橫截面積對應於導管406之橫截面積/橫截面寬度。並且，錐形壁512之相對側之角度α可處於約30°至小於90°，約45°至約88°，約60°至約85°之範圍內，或約為82°。
導管406之長度與第一區段及/或第二區段之長度的比率對於在腔室206與反應腔室之間提供所需的氣流型樣及壓力差可能很重要。根據本發明之示範性實施例，導管406之長度與第一區段402及/或第二區段404之長度(例如，沿著其共同軸線)的比率介於約1：1與約8：1之間，約2：1至約7：1，或約3：1至約5：1。
導管406之長度可處於約0.5mm至約50mm，約5mm至約40mm，或約10mm至約30mm之範圍內。導管之尺寸(例如，直徑)可為約0.1mm至約10mm，0.25mm至約5mm，或約0.5mm至約1.5mm。導管406之橫截面可為圓形、正方形、矩形，或任何適合的形狀。
參考圖6，孔隙204之構型可為六邊形。在此情況下，相鄰孔隙204係沿著垂直軸線602，並且沿著軸線604、606，軸線604、606與水平軸線608成30°(或與軸線602成60°)。在所說明之實例中，沿著垂直軸線之相鄰孔隙204中心的間距c可介於2mm與20mm之間，約5mm至約15mm，或約9mm至約11mm。孔隙204中心的間距b可為約1mm至約10mm，約2mm至約8mm，或為約4mm至約6mm。並且，間距a可與間距c相同或相似。相鄰孔隙之周邊之間的距離可處於0mm至約10mm，約0mm至約5mm，或大於0mm至約10mm，或0.25mm至約5mm之範圍內。
圖7說明根據本發明之另外的示範性實施例之另一噴淋頭700。噴淋頭700與噴淋頭200相似，只是噴淋頭700包括第一腔室702及第二腔室704、第一氣體分配板706及第二氣體分配板708以及穿過第一氣體分配板形成之第一孔隙710及穿過第二氣體分配板708形成之第二孔隙712°第一孔隙710及/或第二孔隙712可與上述孔隙204相同或相似。
在噴淋頭700之使用期間，第一氣體可穿過一或多個第一入口714、716流動至第一腔室702，穿過孔隙710並且朝駐留在基座718上之基板流動，並且第二氣體可從第二入口720流動至第二腔室704，並且穿過孔隙712，以使得第一氣體及第二氣體在到達反應腔室722以前不會混合。
儘管本文闡述了本發明之示範性實施例，但應理解，本發明不受此限制。例如，儘管結合各種特定組態描述了氣體分配總成及氣體分配板及反應器系統，但本發明不一定限於此等實例。在不脫離本發明之精神及範疇的情況下，可對本文所闡述之示範性總成、系統、板以及方法做出各種修改、變更以及增強。
本發明之標的物包括本文所揭露之各種系統、組件及組態，以及其他特徵、功能、作用及/或性質之所有新穎且不明顯的組合及子組合，以及其任何及所有等同物。

Claims (23)

  1. 一種用於在一反應腔室內分配一氣體之噴淋頭總成，該噴淋頭總成包含：一氣體分配板，其包含一第一表面及一第二表面；在該總成內形成之一腔室，該腔室與該氣體分配板之該第一表面相鄰；以及複數個孔隙，其從該第一表面延伸至該第二表面，其中所述複數個孔隙中之每一個包含：一第一區段，其包含一與該第一表面接觸之第一區段第一端、一第一區段第二端，以及兩者之間的一第一區段連續錐形壁，其中該第一區段第一端之一橫截面積大於該第一區段第二端之一橫截面積；一導管，其包含一與該第一區段第二端接觸之導管第一端以及一導管第二端；一第二區段，其包含一與該第二表面接觸之第二區段第一端、一與該導管第二端接觸之第二區段第二端，以及兩者之間的一第二區段連續錐形壁，其中該第二區段第一端之一橫截面積大於該第二區段第二端之一橫截面積；以及其中該第一區段及該導管共用一共同軸線，並且沿著該共同軸線的該導管之一長度與該第一區段之一長度的一比率介於約1：1至約8：1之間。
  2. 如申請專利範圍第1項之用於在一反應腔室內分配一氣體之噴淋頭總成，其中該第一區段、該導管以及該第二區段共用一共同軸線，並且該 導管沿著該共同軸線之一長度介於約0.5mm與約50mm之間。
  3. 如申請專利範圍第1項之用於在一反應腔室內分配一氣體之噴淋頭總成，其中該第二區段及該導管共用一共同軸線，並且沿著該共同軸線的該導管之一長度與該第二區段之一長度的一比率介於約1：1至約8：1之間。
  4. 如申請專利範圍第1項之用於在一反應腔室內分配一氣體之噴淋頭總成，其中該第一區段之一長度處於約0.25mm至約20mm之範圍內。
  5. 如申請專利範圍第1項之用於在一反應腔室內分配一氣體之噴淋頭總成，其中該第二區段之一長度處於約0.25mm至約20mm之範圍內。
  6. 如申請專利範圍第1項之用於在一反應腔室內分配一氣體之噴淋頭總成，其中該導管之一橫截面寬度為約0.5mm至約2mm。
  7. 如申請專利範圍第1至6項中任一項之用於在一反應腔室內分配一氣體之噴淋頭總成，其中該第一區段連續錐形壁之相對側之一角度介於約30度至小於90度之間。
  8. 如申請專利範圍第1至6項中任一項之用於在一反應腔室內分配一氣體之噴淋頭總成，其中該第二區段連續錐形壁之相對側之一角度介於約30度至小於90度之間。
  9. 如申請專利範圍第1至6項中任一項之用於在一反應腔室內分配一氣體之噴淋頭總成，其中該氣體分配板包含約100個與1500個之間的孔隙。
  10. 如申請專利範圍第1至6項中任一項之用於在一反應腔室內分配一氣體之噴淋頭總成，其中沿著一第一軸線的相鄰孔隙之中心之間的一距離介於約5mm與約20mm之間。
  11. 如申請專利範圍第1至6項中任一項之用於在一反應腔室內分配一 氣體之噴淋頭總成，其中在一第二表面上在相鄰孔隙之周邊之間的一距離介於0mm與約5mm之間。
  12. 如申請專利範圍第1至6項中任一項之用於在一反應腔室內分配一氣體之噴淋頭總成，其中該第一區段及該第二區段中之一或多個包含一截頭圓錐形形狀。
  13. 如申請專利範圍第1項之用於在一反應腔室內分配一氣體之噴淋頭總成，其進一步包含與一第二腔室相鄰之一第二氣體分配板。
  14. 如申請專利範圍第13項之用於在一反應腔室內分配一氣體之噴淋頭總成，其中該第二氣體分配板包含第二複數個孔隙，其中所述第二複數個孔隙中之每一個包含：一第二孔隙第一區段，其包含一與該第二氣體分配板之一第一表面接觸之第二孔隙第一區段第一端、一第二孔隙第一區段第二端，以及兩者之間的一第二孔隙第一區段連續錐形壁，其中該第二孔隙第一區段第一端之一橫截面積大於該第二孔隙第一區段第二端之一橫截面積；一第二孔隙導管，其包含一與該第二孔隙第一區段第二端接觸之第二孔隙導管第一端以及一第二孔隙導管第二端；以及一第二孔隙第二區段，其包含一與該第二氣體分配板之一第二表面接觸之第二孔隙第二區段第一端、一與該第二孔隙導管第二端接觸之第二孔隙第二區段第二端，以及兩者之間的一第二孔隙第二區段連續錐形壁，其中該第二孔隙第二區段第一端之一橫截面積大於該第二孔隙第二區段第二端之一橫截面積，以及其中該第一區段及該導管共用一共同軸線，並且沿著該共同軸線 的該導管之一長度與該第一區段之一長度的一比率介於約1：1至約8：1之間。
  15. 如申請專利範圍第1至6項中任一項之用於在一反應腔室內分配一氣體之噴淋頭總成，其中所述孔隙之一構型為六邊形。
  16. 一種氣體分配板，其包含：一第一表面及一第二表面；以及複數個孔隙，其從該第一表面延伸至該第二表面，其中所述複數個孔隙中之每一個包含：一第一區段，其包含一與該第一表面接觸之第一區段第一端、一第一區段第二端，以及兩者之間的一第一區段連續錐形壁，其中該第一區段第一端之一橫截面積大於該第一區段第二端之一橫截面積；一導管，其包含一與該第一區段第二端接觸之導管第一端以及一導管第二端；一第二區段，其包含一與該第二表面接觸之第二區段第一端、一與該導管第二端接觸之第二區段第二端，以及兩者之間的一第二區段連續錐形壁，其中該第二區段第一端之一橫截面積大於該第二區段第二端之一橫截面積，以及其中該第二區段及該導管共用一共同軸線，並且沿著該共同軸線的該導管之一長度與該第二區段之一長度的一比率介於約1：1至約8：1之間。
  17. 如申請專利範圍第16項之氣體分配板，其中沿著一第一軸線的相鄰孔隙之中心之間的一距離介於約2mm與約20mm之間。
  18. 如申請專利範圍第16項之氣體分配板，其中在該第二表面上在相鄰孔隙之周邊之間的一距離介於0mm與約5mm之間。
  19. 如申請專利範圍第16項之氣體分配板，其中該孔隙之一長度大於1mm。
  20. 如申請專利範圍第16至19項中任一項之氣體分配板，其中該第一區段及該第二區段中之一或多個包括一截頭圓錐形形狀。
  21. 如申請專利範圍第16至19項中任一項之氣體分配板，其中所述孔隙之一構型為六邊形。
  22. 一種氣體分配板，其包含：一第一表面及一第二表面；以及複數個孔隙，其從該第一表面延伸至該第二表面，其中所述複數個孔隙中之每一個包含：一第一區段，其包含一與該第一表面接觸之第一區段第一端、一第一區段第二端，以及兩者之間的一第一區段連續錐形壁，其中該第一區段第一端之一橫截面積大於該第一區段第二端之一橫截面積；一導管，其包含一與該第一區段第二端接觸之導管第一端以及一導管第二端；以及一第二區段，其包含一與該第二表面接觸之第二區段第一端、一與該導管第二端接觸之第二區段第二端，以及兩者之間的一第二區段連續錐形壁，其中該第二區段第一端之一橫截面積大於該第二區段第二端之一橫截面積，其中該第一區段、該導管以及該第二區段共用一共同軸線，其中 沿著該共同軸線的該導管之一長度與該第一區段之一長度的一比率介於約1：1至約8：1之間，並且其中沿著該共同軸線的該導管之一長度與該第二區段之一長度的一比率介於約1：1至約8：1之間。
  23. 如申請專利範圍第22項之氣體分配板，其中該第二區段連續錐形壁之相對側之間的一角度介於約30度至小於90度之間。
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US10858737B2 (en) 2020-12-08
TW202037751A (zh) 2020-10-16
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