KR102433657B1 - 반응 챔버들을 열적 교정하는 방법들 - Google Patents
반응 챔버들을 열적 교정하는 방법들 Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 208
- 238000000034 method Methods 0.000 title claims abstract description 110
- 238000012937 correction Methods 0.000 claims abstract description 61
- 238000009529 body temperature measurement Methods 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 8
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- 238000010438 heat treatment Methods 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
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- 241000239290 Araneae Species 0.000 description 2
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- 239000000376 reactant Substances 0.000 description 2
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- QCAWEPFNJXQPAN-UHFFFAOYSA-N methoxyfenozide Chemical compound COC1=CC=CC(C(=O)NN(C(=O)C=2C=C(C)C=C(C)C=2)C(C)(C)C)=C1C QCAWEPFNJXQPAN-UHFFFAOYSA-N 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004861 thermometry Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
반응 챔버를 열적 교정하는 방법이 제공된다. 일부 실시예들에서, 방법들은 제1 반응 챔버 내에서 제1 온도 센서를 사용하여 제1 접촉식의 온도 센서의 제1 정정 인자(correction factor)를 계산하는 단계와, 제1 교정된(calibrated) 접촉식의 온도 센서를 제공하도록 제1 온도 조절기에 상기 제1 정정 인자를 적용하는 단계를 포함한다. 실시예들은 또한 상기 제1 교정된 접촉식의 온도 센서를 사용하여 상기 제1 반응 챔버 내에서 제1 비-접촉식의 온도 센서의 제1 교정 인자를 계산하는 단계와, 제1 교정된 비-접촉식의 온도 센서를 제공하도록 상기 제1 교정 인자를 상기 제1 비-접촉식의 온도 센서에 적용하는 단계를 포함할 수 있다.
Description
[1] 본 출원은 2016년 10월 26일 출원된 "METHODS FOR THERMALLY CALIBRATING REACTION CHAMBERS"라는 발명의 명칭의 미국 임시출원 제62/413,099호의 이익 및 우선권을 주장하며, 그 내용들이 본 개시와 상충하지 않는 한도에서 그 내용들이 참조문헌으로 병합된다.
[2] 본 개시는 일반적으로 반응 챔버들 및 반응 챔버들을 열적 교정하는 방법들에 관한 것이다.
[3]고온 반응 챔버들은 반도체 기판들 상에 다양한 물질 층들을 퇴적하기 위하여 사용될 수 있다. 예를 들어 실리콘 웨이퍼와 같은 반도체 기판은 반응 챔버 내부에서 웨이퍼 지지체 상에 놓여질 수 있다. 웨이퍼와 지지체 모두가 요구되는 설정값 온도까지 가열될 수 있다. 예시의 웨이퍼 처리 공정에서, 반응물 가스들이 가열된 웨이퍼 상부로 통과할 수 있고, 이는 웨이퍼 상으로의 반응물 물질의 얇은 층의 화학적 기상 퇴적(chemical vapor deposition, CVD)을 유발한다. 후속의 퇴적들, 도핑, 리소그래피, 식각 및 다른 공정들을 통해, 이러한 층들은 집적 회로들로 형성된다.
[4] 다양한 공정 변수들이 고품질의 퇴적된 층들을 보장하도록 주의 깊게 조절될 수 있다. 이러한 하나의 공정 변수의 예시는 웨이퍼 온도이다. CVD 동안에, 예를 들어 웨이퍼 상으로의 퇴적을 위한 특정한 소정의 온도 범위들 내에서 퇴적 가스들이 반응한다. 온도 변화는 퇴적 속도 및 원치 않는 층 두께의 변화를 유발할 것이다. 따라서, 처리가 시작되기 전에 웨이퍼를 요구되는 온도까지 가져가도록, 및 공정을 통틀어 요구되는 온도들을 유지하도록 웨이퍼 온도를 정밀하게 조절하는 것이 중요하다.
[5] 웨이퍼 퇴적을 위하여 사용되는 명목상 동일한 CVD 툴들은 툴별로 일부 변형을 포함할 수 있다. 예를 들어, CVD 공정들 내에서 사용되는 반응 챔버들은 각각 특징적인 열적 환경을 가질 수 있고, 이는 다시 퇴적 공정 동안의 웨이퍼 온도에 영향을 줄 수 있다. 반응 챔버들은 쿼츠(quartz) 물질들로부터 제조될 수 있고, 쿼츠의 제조에서 사용되는 공정들이 예를 들어 임계 치수들, 물질 품질, 굴절 특성들 등과 같은 쿼츠 반응 챔버들의 피쳐들의 변동들을 유발할 수 있다. 추가적으로, 반응 챔버 내에서와 이를 둘러싸는 구성요소들은 위치 및 최적의 기능을 달리할 수 있고, 이는 추가적인 변동을 부가할 수 있다. 반응 챔버들 내에서의 변동들은 고용적(high volume) 제조를 위하여 요구되지 않을 수 있으며, 여기서 다수의 반응 챔버들이 공정 결과들이 본질적으로 동일할 것이라는 기대를 가지며 동일한 공정 레시피를 수행할 수 있다. 예를 들어, CVD 공정에 있어서, 결과의 퇴적된 층들은 균일한 두께, 캐리어 이동도, 굴절률들, 스트레스 등을 지닐 것으로 기대된다.
[6] CVD 툴들 내의 변동에 기인하여 발생할 수 있는 상기 문제점들을 해결하기 위하여 "툴-대-툴 매칭(tool-to-tool matching)"으로 알려진 공정들이 채용될 수 있다. 그러나, 현존하는 "툴-대-툴 매칭" 공정들은 시간 소모가 크고, 감수하기 어려울 정도의 비용이 들며, 반응 챔버들을 열적 교정하기 위한 효율적인 방법들을 제공하지 않을 수 있다.
본 발명의 목적은 전술한 문제들을 극복하기 위한 것이다.
[7] 본 요약은 단순화된 형태로 개념들의 선택들을 소개하기 위하여 제공된다. 이러한 개념들은 아래의 본 개시의 예시적인 실시예들의 상세한 설명에서 더욱 상세하게 설명된다. 이러한 요약은 청구되는 기술적 특징의 주요 특징들 또는 필수적 특징들을 식별하도록 의도되는 것이 아니며, 또한 청구되는 기술적 특징의 범위를 제한하기 위하여 사용되도록 의도되는 것이 아니다.
[8] 일부 실시예들에서, 반응 챔버들을 열적 교정하는 방법들이 제공된다. 상기 방법들은, 제1 온도 센서를 사용하여 제1 반응 챔버 내에서 제1 접촉식 온도 센서의 제1 정정 인자(correction factor)를 계산하는 단계를 포함할 수 있다. 상기 방법들은 또한, 제1 교정된 접촉식 온도 센서를 제공하도록 제1 온도 조절기에 상기 제1 정정 인자를 적용하는 단계와, 상기 제1 교정된 접촉식 온도 센서를 사용하여 상기 제1 반응 챔버 내에서 제1 비-접촉식 온도 센서의 제1 교정 인자를 계산하는 단계를 포함할 수 있다. 방법들은 추가적으로 제1 교정된 비-접촉식 온도 센서를 제공하도록 상기 제1 비-접촉식 온도 센서에 상기 제1 교정 인자를 적용하는 단계를 포함할 수 있다. 방법들은 또한 상기 제1 교정된 비-접촉식 온도 센서를 제2 반응 챔버로 전달하는 단계와, 상기 제1 교정된 비-접촉식 온도 센서를 사용하여 상기 제2 반응 챔버 내에서 제2 접촉식 온도 센서의 제2 정정 인자를 계산하는 단계를 포함할 수 있다. 상기 방법들은 또한 제2 교정된 접촉식 온도 센서를 제공하도록 상기 제2 정정 인자를 제2 온도 조절기에 적용하는 단계를 포함할 수 있다.
[9] 추가적인 실시예들에서, 반응 챔버들을 열적 교정하는 추가적인 방법들이 제공된다. 상기 방법들은, 제1 반응 챔버 내에서 제1 서모커플(thermocouple)에 의해 감지된 온도를 상기 제1 반응 챔버 내에서 장치된 웨이퍼(instrumented wafer)에 의해 감지된 온도와 비교함에 의해, 상기 제1 반응 챔버와 연관된 제1 온도 조절기에 제1 정정 인자를 계산하고 적용하는 단계를 포함할 수 있다. 방법들은 또한 상기 제1 서모커플에 의해 감지된 온도와 제1 고온계(pyrometer)에 의해 감지된 온도를 비교함에 의해 상기 제1 반응 챔버 내에서 상기 제1 고온계에 제1 교정 인자를 계산하고 적용하는 단계를 포함할 수 있다. 방법들은 추가적으로 상기 제1 고온계를 제2 반응 챔버에 전달하는 단계와, 상기 제2 반응 챔버 내에서 제2 서모커플에 의해 감지된 온도를 상기 제1 고온계에 의해 감지된 온도를 비교함에 의해 상기 제2 반응 챔버와 연관된 제2 온도 조절기에 제2 정정 인자를 계산하고 적용하는 단계를 포함할 수 있다.
[10] 본 발명과 종래 기술에 대비하여 달성되는 이점들을 요약하기 위한 목적들로서, 본 발명의 특정한 목표들 및 이점들이 여기서 설명된 바 있다. 물론, 이러한 목적들 및 이점들 모두가 본 발명의 임의의 특정한 실시예에 따라 얻어질 수 있을 필요는 없다는 점이 이해되어야 한다. 따라서, 예를 들어 당업자는 본 발명이 여기서 개시되거나 암시될 수 있는 것과 같은 다른 목적들 또는 이점들을 필수적으로 달성하지 않고 여기서 개시되거나 암시되는 하나의 이점 또는 일 군의 이점들을 달성하거나 최적화하는 방식으로 구체화되거나 수행될 수 있다는 점을 인식할 것이다.
[11] 실시예들 모두가 여기 개시된 본 발명의 범위 내에 있을 것이 의도된다. 이러한 및 다른 실시예들은 첨부된 도면들을 참조로 한 특정한 실시예들의 하기의 상세한 설명으로부터 당업자에게 즉각적으로 명백해질 것이며, 본 발명이 개시된 임의의 특정한 실시예(들)에 한정되는 것은 아니다.
[12] 본 명세서가 본 발명의 실시예들로 간주되는 것을 특별히 지시하고 명백하게 주장하는 청구항들로 마무리짓는 한편, 본 개시의 실시예들의 이점들이 첨부한 도면들과 결합하여 읽힐 때 본 개시의 실시예들의 특정한 예시의 상세한 설명으로부터 더욱 즉각적으로 확인될 수 있다.
[13] 도 1은 서모커플들의 어레이를 포함하는 예시적인 장치된 웨이퍼의 개략도이다.
[14] 도 2는 반응 챔버를 포함하는 예시적인 웨이퍼 공정 툴의 개략도이다.
[15] 도 3은 반응 챔버를 열적 교정하는 방법 내의 단계들의 개요를 나타내는 플로우 차트이다.
[16] 도 4는 본 개시의 실시예들에 의해 생산된 두께 균일도 프로파일들을 나타낸다.
[13] 도 1은 서모커플들의 어레이를 포함하는 예시적인 장치된 웨이퍼의 개략도이다.
[14] 도 2는 반응 챔버를 포함하는 예시적인 웨이퍼 공정 툴의 개략도이다.
[15] 도 3은 반응 챔버를 열적 교정하는 방법 내의 단계들의 개요를 나타내는 플로우 차트이다.
[16] 도 4는 본 개시의 실시예들에 의해 생산된 두께 균일도 프로파일들을 나타낸다.
[17] 여기 표현되는 도시들은 임의의 특정한 물질, 구조물, 또는 소자의 실제 도면임을 의미하는 것은 아니며, 단순히 본 개시의 실시예들을 설명하는 데 사용되는 이상화된 대표도들이다.
[18] 여기 사용된 바와 같이, 용어 "비-접촉식 온도 센서"는 감지될 물체로부터 원격으로 온도를 감지할 수 있는 온도 센서를 가리킬 수 있다.
[19] 여기 사용된 바와 같이, 용어 "접촉식 온도 센서"는 감지될 물체에 대한 직접 접촉으로부터 또는 근접부로부터의 온도를 감지할 수 있는 온도 센서를 가리킬 수 있다.
[20] 여기 사용된 바와 같이, 용어 "반응 챔버"는 열적 공정이 수행될 수 있는 베셀, 챔버, 또는 용기를 가리킬 수 있다.
[21] 본 개시는 반응 챔버들을 열적 교정하기 위하여 사용될 수 있는 방법들을 포함한다. 반응 챔버들의 열적 교정은 둘 또는 그 이상의 반응 챔버들 사이에 실질적으로 동일한 열적 환경이 생성될 수 있도록 할 수 있고, 이는 다수의 반응 챔버들에 걸쳐 동일한 공정 레시피의 사용을 허용하며, 공정 결과들에서 대응되는 균일성을 허용할 수 있다. 예를 들어, 다수의 반응 챔버들은 클러스터 타입의 툴 내에서 사용될 수 있거나, 또는 고용적 제조 타입의 환경에서 사용될 수 있고, 여기서 다수의 반응 챔버들을 포함하는 다수의 공정 툴들이 동일한 공정 레시피들을 구동한다.
[22] 본 개시는 둘 또는 그 이상의 반응 챔버들 사이의 "툴-대-툴 매칭"(tool-to-tool matching, TTTM)을 위한 열적 교정 방법들을 포함한다. 본 개시에서 개시하는 TTTM 절차들은 비한정적인 예시적 실시예에서 고온계와 같은 비-접촉식 온도 센서의 교정을 포함할 수 있다. 이러한 교정된 비-접촉식 온도 센서는 빠르고 비용 효율적인 추가적인 반응 챔버들의 열적 교정을 위하여 추가적인 반응 챔버들로 후속적으로 전달될 수 있다.
[23] 반응 챔버들의 열적 교정을 위하여 업계에 알려진 방법들은 예를 들어 서모커플(thermocouple, TC) 장치된 웨이퍼와 같은 장치된 웨이퍼(instrumented wafer)를 사용할 수 있다. 더욱 상세하게는, 도 1을 참조하면, 장치된 웨이퍼(100)는 교정된 서모커플들의 어레이가 부착된 웨이퍼를 포함할 수 있다. 예를 들어, 도 1에 도시된 바와 같이, 장치된 웨이퍼(100)는 웨이퍼에 부착된, 중심 서모커플(110)을 포함하는 교정된 서모커플들(1-18)을 포함할 수 있다. 반응 챔버들의 열적 교정은 반응 챔버들 내부로 TC-장치된 웨이퍼의 설치와, 후속적으로 상기 부착된 서모커플들에 대응되는 위치들에서 웨이퍼를 가로질러 온도를 측정하는 단계를 요구할 수 있다. TC-장치된 웨이퍼들은 이들이 반응 챔버 내에서 넓은 변수 공간(온도, 압력, 캐리어 가스 흐름 등)을 스크린하고 웨이퍼 온도 내에서 비-균일성을 최소화하는 것이 가능하기 때문에 유용할 수 있다.
[24] 그러나, TC-장치된 웨이퍼를 사용하는 반응 챔버들의 열적 교정은 다양한 원인들에 의해 바람직하지 않을 수 있다. 둘 이상의 반응 챔버 내로의 장치된 웨이퍼의 설치는, 요구되는 노동 시간 및 발생되는 물질 비용들의 관점 모두에서 큰 비용이 요구될 수 있다. 장치된 웨이퍼의 사용은 침습적(invasive)일 수 있으며, 이는 이들이 장치된 웨이퍼의 설치에서뿐만 아니라 장치된 웨이퍼의 제거에서 하드웨어 어셈블리 오류들의 잠재적인 근원 및 웨이퍼 공정 툴의 해체/조립 부분들의 필요성을 도입하기 때문이다. 추가적으로, TC-장치된 웨이퍼의 설치 및 후속적인 제거는 "건조 시간", 즉 반응 챔버로부터 오염된 습기를 제거하기 위하여 요구되는 시간을 위하여 약 12 내지 20시간의 긴 기간을 부과할 수 있다. 그러므로, 방법들은 "툴-대-툴 매칭" 목적들을 위하여 반응 챔버들의 열적 교정을 향상시킬 것이 요구된다. 이러한 요구되는 반응 챔버들의 열적 교정 방법들의 예시들이 아래에 더욱 상세하게 개시된다.
[25] 도 2는 웨이퍼 공정 툴의 비한정적인 예시의 개략도이고, 이는 고온 화학 기상 퇴적 챔버를 포함할 수 있다. 도 2의 웨이퍼 공정 툴(200)에서, 웨이퍼(210)는 웨이퍼 지지체(230) 상에서 반응 챔버(220) 내에 지지될 수 있다. 웨이퍼 지지체(230)는 그 상부에 웨이퍼(210)가 놓여질 수 있는 서셉터(250)를 지지하는 스파이더(240)를 포함할 수 있다. 스파이더(240)는 섀프트(260)에 장착될 수 있고, 이는 반응 챔버(220) 하부 벽에 매달린 튜브(270)를 따라 하방으로 연장될 수 있다.
[26] 웨이퍼 공정 툴(200)은 웨이퍼(210)를 설정값 온도까지 올리는 데 사용될 수 있는 복사 가열 성분들(280, 290)을 포함할 수 있는 가열 시스템이 구비될 수 있다. 연장된 튜브-타입 가열 성분들(280, 290) 각각은 고휘도 텅스텐 필라멘트 램프를 포함할 수 있다. 이러한 가열 성분들(280, 290)은 상당한 흡수 없이 반응 챔버(220)의 벽들을 통해 전송되는 복사 열 에너지를 생성한다. 반응 챔버(220)의 벽들은 예를 들어 쿼츠와 같은 투명 물질을 포함할 수 있다. 반도체 공정 업계에서 알려진 바와 같이, 다양한 램프들(280, 290)의 전력은 온도 센서들에 응답하여 독립적으로 또는 그룹지어진 영역들 내에서 조절될 수 있다. 공정 온도들은 약 400℃ 내지 1200℃일 수 있다.
[27] 예를 들어 서모커플(292)과 같은 접촉식 온도 센서가 웨이퍼(210) 아래에서 이에 대한 근접부 내에 도시되며, 챔버(220)의 하부 벽에 매달린 튜브(270) 내부에 위치할 수 있다. 웨이퍼 온도는 또한 예를 들어 광학 고온계와 같은 비-접촉식 온도 센서(294)로 측정될 수 있고, 이는 웨이퍼(210)에 대한 직접적 가시선(line of sight)을 가질 수 있다. 온도 조절기(296)는 서모커플(292)에 의해 감지된 온도 및 요구되는 설정값 온도에 기초하여 가열 성분들(280, 290)에 대한 전력을 조절하도록 반응 챔버(220)와 결합될 수 있다.
[28] 온도 조절 시스템들에서, 서모커플은 이들이 종종 온도가 감지될 물체와 접촉하여 위치할 수 있기 때문에 접촉식 센서로 지칭될 수 있다. 그러나, 서모커플은 때때로 온도가 감지될 물체로부터 약간 이격되어 위치할 수 있다. 서모커플은 측정될 물체에 대한 전도(conductive) 열 전달에 의해 온도를 감지한다. 이러한 타입의 센서는 접촉식 센서로 지칭될 수 있으나, 여기 사용된 것과 같은 이러한 용어가 감지될 물체에 가깝게 위치하나 실제로 접촉하지는 않는 서모커플들을 포함할 수 있다. 더욱이, "접촉식 센서"는 이들이 서모커플을 포함하지 않을 수 있다 하더라도 대류 또는 복사 열 전달에 의해 구동하는 온도 센서를 포함할 수 있다.
[29] 반대로, 광학 고온계는 비-접촉식 온도 센서로 지칭될 수 있고, 이는 관심 있는 온도, 즉 웨이퍼에 의해 발산되는 흑체 복사를 측정함에 의해 감지될 온도의 물체로부터 현저히 이격될 수 있기 때문이다. 본 개시의 목적들을 위하여, 비-접촉식 온도 센서는 고온계를 포함할 수 있을 뿐만 아니라, 예를 들어 밴드-에지 온도측정기(band-edge thermometry)와 같은 원격으로 온도를 감지할 수 있는 다른 온도 센서들을 포함할 수 있다.
[30] 본 개시의 방법들은 반응 챔버들을 열적 교정하도록 접촉식 온도 센서들 및 비-접촉식 온도 센서들을 모두 사용할 수 있다. 본 개시의 일부 실시예들에서, 챔버들은 도 2의 반응 챔버(220)로서 도시된 것과 같은 반응 챔버들을 포함할 수 있다.
[31] 일부 실시예들에서, 본 개시의 방법들은 도 3을 참조로 이해될 것이며, 이는 반응 챔버들의 열적 교정 방법(300) 내의 단계들의 개요를 나타내는 플로우 차트를 포함한다.
[32] 방법(300)의 제1 공정 단계(310)는 제1 온도 센서를 사용하여 제1 반응 챔버 내에서 제1 접촉식 온도 센서의 제1 정정 인자를 계산하는 단계를 포함할 수 있다. 더욱 상세하게는, 제1 반응 챔버는 도 2에 도시된 바와 같은 반응 챔버(220)를 포함할 수 있다. 일부 실시예들에서, 본 개시의 방법들은 예를 들어 도 2의 서모커플(292)과 같은 서모커플을 포함하도록 제1 반응 챔버 내에서 제1 접촉식 온도를 선택하는 단계를 포함할 수 있다. 도 2에 도시된 것과 같은 서모커플(292)은 서모커플(292)이 웨이퍼(210)의 중심 위치 아래에 직접 배치되기 때문에 일부 실시예들에서는 "중심 서모커플"로 지칭될 수 있다.
[33] 일부 실시예들에서, 제1 접촉식 온도 센서, 예를 들어 서모커플(292)은 제1 온도 조절기(296)와 결합될 수 있다. 제1 온도 조절기(296)는 제1 접촉식 온도 센서에 의해 감지되는 온도로부터의 응답에 따라 반응 챔버의 온도를 조절하도록 구성될 수 있는 회로를 포함할 수 있다. 제1 온도 조절기는 서모커플(292) 또는 웨이퍼(210)에 요구되는 온도를 제공하도록, 가열 성분들(280, 290)로의 전력을 조절하기 위하여 제1 접촉식 온도 센서에 의해 감지되는 온도를 채용한다. 일부 실시예들에서, 서모커플(292) 또는 웨이퍼(210)를 위한 요구되는 온도는 "설정값(set point)"으로 지칭될 수 있고, 제1 온도 조절기(296)는 제1 온도 조절기(296)의 P(proportionality, 비례), I(integral, 적분) 및 D(derivative, 미분) 변수들을 설정함에 의해 설정값에 따라 제1 반응 챔버 내에서 온도를 조절하는 데 사용될 수 있는 PID 조절기를 포함할 수 있다. 설정값과 측정된 온도 사이의 온도 구배를 감소시키도록 제1 접촉식 온도 센서의 읽기를 사용함에 의해 제1 온도 조절기는 가열 성분들(280, 290)을 조절한다.
[34] 일부 실시예들에서, 제1 접촉식 온도 센서에 의해 감지된 온도는 제1 온도 조절기로 보내지기 전에 조정될 수 있다. 예를 들어, "제1 정정 인자"는 제1 접촉식 온도 센서에 의해 감지된 온도까지 오프셋(offset)을 적용하도록 채용될 수 있다. 일부 실시예들에서, 제1 온도 센서는 제1 정정 인자를 계산하는 단계에서 채용될 수 있고, 방법들은 예를 들어 TC-장치된 웨이퍼와 같은 장치된 웨이퍼를 포함하도록 제1 온도 센서를 선택하는 단계를 포함할 수 있다. 비한정적인 예시로서, 도 1의 장치된 웨이퍼(100)와 같은 장치된 웨이퍼가 사용될 수 있다. 일부 실시예들에서, 제1 온도 센서(예를 들어, 장치 웨이퍼)는 도 2에 도시된 것과 같은 제1 반응 챔버(220) 내에 배치될 수 있고, 여기서 웨이퍼(210)는 장치된 웨이퍼를 포함한다.
[35] 일부 실시예들에서, 제1 온도 센서를 사용하여 제1 반응 챔버 내에서 제1 정정 인자를 계산하는 단계는, 제1 접촉식 온도 센서에 의해 감지된 온도 측정을 제1 온도 센서에 의한 온도와 비교하는 단계와, 상기 비교에 기초하여 제1 정정 인자를 계산하는 단계를 더 포함한다. 더욱 상세하게는 도 2를 참조하면, 제1 반응 챔버(220)는 가열 성분들(280, 290)을 사용하는 제1 설정값까지 가열될 수 있다. 일단 제1 반응 챔버(220) 내의 온도가 제1 설정값에서 안정화되면, 제1 접촉식 온도 센서, 예를 들어 서모커플(292)에 의해 감지된 온도 측정은 제1 온도 센서, 예를 들어 장치된 웨이퍼(210)에 의해 감지된 온도와 비교될 수 있다. 두 개의 온도 측정들의 비교에 기초하여 제1 정정 인자가 계산될 수 있고, 일부 실시예들에서 제1 정정 인자는 제1 접촉식 온도 센서에 의해 감지된 온도와 제1 온도 센서에 의해 감지된 온도 사이의 온도 차이를 포함할 수 있다. 예를 들어, 일부 실시예들에서, 제1 정정 인자는 제1 온도 센서에 의해, 예를 들어 장치된 웨이퍼(100)의 중심 서모커플(110)로부터 감지된 온도와 제1 접촉식 온도 센서에 의해, 예를 들어 "중심" 서모커플(292)로부터 감지된 온도 사이의 차이로서 계산될 수 있다.
[36] 일부 실시예들에서, 제1 온도 센서를 사용하여 제1 반응 챔버 내에서 제1 접촉식 온도 센서의 제1 정정 인자를 계산하는 단계는 1회 또는 그 이상 반복될 수 있다. 예를 들어, 반응 챔버(220)는 가열 성분들(280, 290)을 사용하여 제2 설정값까지 가열될 수 있고, 일단 제1 반응 챔버(220) 내의 온도가 제2 설정값에서 안정화되면, 제1 접촉식 온도 센서, 예를 들어 서모커플(292)에 의해 감지된 온도와 제1 온도 센서, 예를 들어 장치된 웨이퍼(210)에 의해 감지된 온도를 비교함에 의해 제2 설정값을 위하여 제1 정정 인자가 계산될 수 있다. 그러므로, 제1 정정 인자는 제1 반응 챔버 내에서 다수의 설정값 온도들을 위하여 계산될 수 있다.
[37] 일부 실시예들에서, 제1 접촉식 온도 센서에 의해 감지된 온도 측정을 제1 온도 센서에 의해 감지된 온도 측정과 비교하는 단계는 동시에 수행된다. 예를 들어, 제1 반응 챔버(220)는 가열 성분들(280, 290)을 사용하여 제1 설정값까지 가열될 수 있고, 일단 제1 반응 챔버(220) 내의 온도가 제1 설정값에서 안정화되면, 제1 접촉식 온도 센서, 예를 들어 서모커플(292)에 의해 감지된 온도와 제1 온도 센서, 예를 들어 장치된 웨이퍼(210)에 의해 감지된 온도가 동시에 비교되며, 즉 제1 접촉식 온도 센서에 의해 감지된 온도와 제1 온도 센서에 의해 감지된 온도의 비교가 시간 상으로 동일한 기간 내에서 수행될 수 있다.
[38] 일부 실시예들에서, 제1 온도 센서를 사용하여 제1 반응 챔버 내에서 제1 접촉식 온도 센서의 제1 정정 인자를 계산하는 단계는 제1 온도 센서와 제1 접촉식 센서를 서로 직접 접촉하도록 배치하는 단계를 더 포함할 수 있다. 다른 실시예들에서, 제1 온도 센서와 제1 접촉식 센서는 서로에게 인접하게 배치될 수 있다.
[39] 일부 실시예들에서, 제1 반응 챔버는 하나 또는 그 이상의 추가적인 접촉식 온도 센서들을 더 포함할 수 있다. 예를 들어, 도 2의 반응 챔버(220)는 서셉터(250) 아래에 및 가까이에서 다양한 위치들에 놓여진 하나 이상의 추가적인 서모커플들(도시되지 않음)을 포함할 수 있다. 추가적인 서모커플들은 제1 온도 센서, 예를 들어 장치된 웨이퍼를 사용하여 교정될 수 있고, 이에 따라 웨이퍼(210)를 가로질러 열적 균일성을 조절할 수 있다.
[40] 방법(300)의 제2 공정 단계(320)는 제1 교정된 접촉식 온도 센서를 제공하도록 제1 온도 조절기에 제1 정정 인자를 적용하는 단계를 포함할 수 있다. 더욱 상세하게는, 제1 공정 단계(310) 내에서 계산된 것과 같은 제1 정정 인자는 제1 접촉식 온도 센서에 대한 오프셋으로서 제1 온도 조절기에 적용될 수 있고, 이에 따라 제1 교정된 접촉식 온도 센서를 제공할 수 있다. 일부 실시예들에서, 일단 제1 정정 인자가 제1 온도 조절기에 적용되면, 제1 접촉식 온도 센서에 의해 감지된 온도 및 제1 온도 센서에 의해 감지된 온도는 요구되는 설정값 온도에서 실질적으로 동일할 수 있다.
[41] 방법(300)의 제3 공정 단계(330)는 제1 교정된 접촉식 온도 센서를 사용하여 제1 반응 챔버 내에서 제1 비-접촉식 온도 센서의 제1 교정 인자를 계산하는 단계를 포함할 수 있다. 더욱 상세하게는, 제1 반응 챔버는 도 2에 도시된 것과 같은 반응 챔버(220)를 포함할 수 있다. 일부 실시예들에서, 본 개시의 방법들은 제1 반응 챔버 내의 제1 비-접촉식 온도 센서가 예를 들어 도 2의 고온계(294)와 같은 고온계를 포함하도록 선택하는 단계를 포함할 수 있다. 본 개시의 일부 실시예들에서, 가열 성분들(280, 290)로부터 발산되는 복사를 수집하는 것을 방지하고 또한 쿼츠 챔버(220)에 의한 흡수를 우회하며, 이에 따라 노이즈 또는 광학 손실로부터의 실질적인 간섭이 없이 고온계(294)가 웨이퍼(210)로부터의 흑체 복사를 수집하는 것이 가능하도록, 고온계(294)는 대략 3.3 ㎛의 파장에서 빛을 감지한다.
[42] 일부 실시예들에서, 제1 비-접촉식 온도 센서에 의해 감지된 온도는 조정될 수 있고, 즉, 반응 챔버(220) 내부의 웨이퍼(210)의 더욱 정밀한 온도 측정을 제공하도록 교정될 수 있다. 예를 들어, "제1 교정 인자"는 제1 비-접촉식 온도 센서에 의해 감지되는 온도에 대해 오프셋을 적용하도록 채용될 수 있다. 일부 실시예들에서, 제1 교정된 접촉식 온도 센서는 제1 교정 인자를 계산하는 단계에서 채용될 수 있다.
[43] 일부 실시예들에서, 제1 교정된 접촉식 온도 센서를 사용하여 제1 반응 챔버 내에서 제1 비-접촉식 온도 센서의 제1 교정 인자를 계산하는 단계는, 제1 비-접촉식 온도 센서에 의해 감지된 온도 측정을 제1 교정된 접촉식 센서에 의해 감지된 온도와 비교하는 단계와, 상기 비교에 기초하여 제1 교정 인자를 계산하는 단계를 더 포함한다.
[44] 더욱 상세하게는 도 2를 참조하면, 제1 반응 챔버(220)는 가열 성분들(280, 290)을 사용하여 제1 설정값까지 가열될 수 있다. 일단 제1 반응 챔버(220) 내의 온도가 제1 설정값에서 안정화되면, 제1 교정된 접촉식 온도 센서, 예를 들어 교정된 서모커플(292)에 의해 감지된 온도 측정은 제1 비-접촉식 온도 센서, 예를 들어 고온계(294)에 의해 감지된 온도와 비교될 수 있다. 제1 교정 인자는 두 개의 온도 측정들의 비교에 기초하여 계산될 수 있다.
[45] 일부 실시예들에서, 제1 교정된 접촉식 온도 센서를 사용하여 제1 반응 챔버 내에서 제1 비-접촉식 온도 센서의 제1 교정 인자를 계산하는 단계는 1회 또는 그 이상 반복될 수 있고, 이에 따라 온도들의 범위를 가로질러 교정 커브 또는 함수를 생성한다. 예를 들어, 반응 챔버(220)는 가열 성분들(280, 290)을 사용하여 제2 설정값까지 가열될 수 있고, 일단 제1 반응 챔버(220) 내의 온도가 제2 설정값에서 안정화되면, 제1 교정된 접촉식 온도 센서, 예를 들어 교정된 서모커플(292)에 의해 감지된 온도와 제1 비-접촉식 온도 센서, 예를 들어 고온계(294)에 의해 감지된 온도를 비교함에 의해 제2 설정값을 위하여 제1 교정 인자가 계산될 수 있다. 그러므로, 제1 교정은 반응 챔버 내에서 다수의 설정값 온도들을 위하여 계산될 수 있다.
[46] 일부 실시예들에서, 제1 교정된 접촉식 온도 센서를 사용하여 제1 반응 챔버 내에서 제1 비-접촉식 온도 센서의 제1 교정 인자를 계산하는 단계는, 제1 반응 챔버 내부로부터 제1 온도 센서를 제거하는 단계, 및 제1 반응 챔버 내부로 반도체 웨이퍼를 제공하는 단계를 더 포함할 수 있고, 제1 비-접촉식 온도 센서, 예를 들어 고온계(294)에 의해 감지된 온도가 반도체 웨이퍼의 표면으로부터 감지된다. 더욱 상세하게는 도 2를 참조하면, 제1 온도 센서는 제1 반응 챔버(220)로부터 제거될 수 있고 반도체 웨이퍼(210)로 교체될 수 있다. 제1 비-접촉식 온도 센서, 예를 들어 고온계(294)는 제1 비-접촉식 온도 센서, 예를 들어 고온계(294)가 반도체 웨이퍼(210)의 표면에서 온도를 감지할 수 있도록 반도체 웨이퍼(210)의 표면의 가시선을 갖는 반도체 웨이퍼(210) 상에 위치할 수 있다. 본 개시의 추가적인 실시예들은 제1 온도 센서(예를 들어, TC-장치된 웨이퍼)와 유사한 흡수 특성들을 갖는, 비한정적인 예시에서 p-형 도핑된 실리콘 웨이퍼와 같은 결정질 반도체 웨이퍼를 포함하도록 반도체 웨이퍼를 선택하는 단계를 포함할 수 있다.
[47] 방법(300)의 제4 공정 단계(340)는 제1 교정된 비-접촉식 온도 센서를 제공하도록 제1 교정 인자를 제1 비-접촉식 온도 센서에 적용하는 단계를 포함할 수 있다. 더욱 상세하게는, 제3 공정 단계(330) 내에서 계산된 것과 같은 제1 교정 인자는 제1 비-접촉식 온도 센서에 대한 오프셋으로서 제1 비-접촉식 온도 센서에 적용될 수 있고, 이에 따라 제1 교정된 비-접촉식 온도 센서를 제공한다. 일부 실시예들에서, 일단 제1 교정 인자가 제1 비-접촉식 온도 센서에 적용되면, 제1 교정된 접촉식 온도 센서에 의해 감지된 온도와 제1 교정된 비-접촉식 온도 센서에 의해 감지된 온도는 요구되는 설정값 온도에서 실질적으로 동일할 수 있다.
[48] 방법(300)의 제5 공정 단계(350)는 제1 교정된 비-접촉식 온도 센서를 제2 반응 챔버로 전달하는 단계를 포함할 수 있다. 더욱 상세하게는, 제1 교정된 비-접촉식 온도 센서는 제1 반응 챔버로부터 제거되고 제2 반응 챔버로 전달될 수 있다. 제1 교정된 비-접촉식 온도 센서는 제2 반응 챔버의 열적 교정에서 사용될 수 있는 한편, 제2 반응 챔버의 열적 교정은 장치된 웨이퍼를 위한 필요성 없이 수행될 수 있다. 일부 실시예들에서, 제2 반응 챔버는 도 2에서 도시된 것과 같은 반응 챔버(220)를 포함할 수 있다.
[49] 방법(300)의 제6 공정 단계(360)는 제1 교정된 비-접촉식 온도 센서를 사용하여 제2 반응 챔버 내에서 제2 접촉식 온도 센서의 제2 정정 인자를 계산하는 단계를 포함할 수 있다. 더욱 상세하게는, 제2 반응 챔버는 도 2에 도시된 것과 같은 반응 챔버(220)를 포함할 수 있다. 일부 실시예들에서, 본 개시의 방법들은, 제2 반응 챔버 내의 제2 접촉식 온도 센서가 예를 들어 도 2의 서모커플(292)과 같은 서모커플을 포함하도록 선택하는 단계를 포함할 수 있다. 도 2에 도시된 것과 같은 서모커플(292)은 서모커플(292)이 웨이퍼(210)의 중심 위치에 배치되기 때문에 일부 실시예들에서 "중심 서모커플"로 다시 지칭될 수 있다.
[50] 일부 실시예들에서, 제2 접촉식 온도 센서, 예를 들어 서모커플(292)은 제2 온도 조절기(296)와 결합될 수 있다. 제2 온도 조절기(296)는 제2 접촉식 온도 센서에 의해 감지된 온도로부터의 응답에 따라 반응 챔버의 온도를 조절하도록 구성될 수 있는 회로를 포함할 수 있다. 제2 온도 조절기는 웨이퍼(210)에 요구되는 온도를 제공하도록, 가열 성분들(280, 290)로의 전력을 조절하기 위하여 제2 접촉식 온도 센서에 의해 감지되는 온도를 채용한다. 일부 실시예들에서, 제2 온도 조절기(296)는 제2 온도 조절기의 P, I 및 D 변수들을 설정함에 의해 설정값에 따라 제2 반응 챔버 내에서 온도를 조절하는 데 사용될 수 있는 PID 조절기를 포함할 수 있다. 설정값과 측정된 온도 사이의 온도 구배를 감소시키도록 제2 접촉식 온도 센서의 읽기를 사용함에 의해 제2 온도 조절기는 가열 성분들을 조절한다.
[51] 일부 실시예들에서, 제2 접촉식 온도 센서에 의해 감지된 온도는 제2 온도 조절기로 보내지기 전에 조정될 수 있다. 예를 들어, "제2 정정 인자"는 제2 접촉식 온도 센서에 의해 감지된 온도까지 오프셋을 적용하도록 채용될 수 있다. 일부 실시예들에서, 제1 교정된 비-접촉식 온도 센서는 제2 정정 인자를 계산하는 단계에서 채용될 수 있고, 방법들은 예를 들어 교정된 고온계를 포함하도록 제1 교정된 비-접촉식 온도 센서를 선택하는 단계를 포함할 수 있다.
[52] 일부 실시예들에서, 제1 교정된 비-접촉식 온도 센서를 사용하여 제2 반응 챔버 내에서 제2 접촉식 온도 센서의 제2 정정 인자를 계산하는 단계는, 제2 접촉식 온도 센서에 의해 감지된 온도 측정을 제1 교정된 비-접촉식 온도 센서에 의한 온도와 비교하는 단계와, 상기 비교에 기초하여 제2 접촉식 온도 센서를 위한 제2 정정 인자를 계산하는 단계를 더 포함한다. 더욱 상세하게는 도 2를 참조하면, 제2 반응 챔버(220)는 가열 성분들(280, 290)을 사용하는 제1 설정값까지 가열될 수 있다. 일단 제2 반응 챔버(220) 내의 온도가 제1 설정값에서 안정화되면, 제2 접촉식 온도 센서, 예를 들어 서모커플(292)에 의해 감지된 온도 측정은 제1 교정된 비-접촉식 온도 센서, 예를 들어 교정된 고온계(294)에 의해 감지된 온도와 비교될 수 있다. 두 개의 온도 측정들의 비교에 기초하여 제2 정정 인자가 계산될 수 있고, 일부 실시예들에서 제2 정정 인자는 제2 접촉식 온도 센서에 의해 감지된 온도와 제1 교정된 비-접촉식 온도 센서에 의해 감지된 온도 사이의 온도 차이를 포함할 수 있다. 예를 들어, 일부 실시예들에서, 제2 정정 인자는 제1 교정된 비-접촉식 온도 센서에 의해, 예를 들어 교정된 고온계(294)로부터 감지된 온도와 제2 접촉식 온도 센서에 의해, 예를 들어 "중심" 서모커플(292)로부터 감지된 온도 사이의 차이로서 계산될 수 있다.
[53] 일부 실시예들에서, 제1 비-접촉식 온도 센서를 사용하여 제2 반응 챔버 내에서 제2 접촉식 온도 센서의 제2 정정 인자를 계산하는 단계는 1회 또는 그 이상 반복될 수 있다. 예를 들어, 제2 반응 챔버(220)는 가열 성분들(280, 290)을 사용하여 제2 설정값까지 가열될 수 있고, 일단 제2 반응 챔버(220) 내의 온도가 제2 설정값에서 안정화되면, 제2 접촉식 온도 센서, 예를 들어 서모커플(292)에 의해 감지된 온도와 제1 교정된 비-접촉식 온도 센서, 예를 들어 교정된 고온계(294)에 의해 감지된 온도를 비교함에 의해 제2 설정값을 위하여 제2 정정 인자가 계산될 수 있다. 그러므로, 제2 정정 인자는 제2 반응 챔버 내에서 다수의 설정값 온도들을 위하여 계산될 수 있다.
[54] 일부 실시예들에서, 제2 접촉식 온도 센서에 의해 감지된 온도 측정을 제1 교정된 비-접촉식 온도 센서에 의해 감지된 온도 측정과 비교하는 단계는 동시에 수행된다. 예를 들어, 제2 반응 챔버(220)는 가열 성분들(280, 290)을 사용하여 제1 설정값까지 가열될 수 있고, 일단 제2 반응 챔버(220) 내의 온도가 제1 설정값에서 안정화되면, 제2 접촉식 온도 센서, 예를 들어 서모커플(292)에 의해 감지된 온도와 제1 교정된 비-접촉식 온도 센서, 예를 들어 교정된 고온계(294)에 의해 감지된 온도가 동시에 비교되며, 즉 제2 접촉식 온도 센서에 의해 감지된 온도와 제1 교정된 비-접촉식 온도 센서에 의해 감지된 온도의 비교가 시간 상으로 동일한 기간 내에서 수행될 수 있다.
[55] 방법(300)의 제7 공정 단계(370)는 제2 교정된 접촉식 온도 센서를 제공하도록 제2 온도 조절기에 제2 정정 인자를 적용하는 단계를 포함할 수 있다. 더욱 상세하게는, 제6 공정 단계(360) 내에서 계산된 것과 같은 제2 정정 인자는 제2 접촉식 온도 센서에 대한 오프셋으로서 제2 온도 조절기에 적용될 수 있고, 이에 따라 제2 교정된 접촉식 온도 센서를 제공할 수 있다. 일부 실시예들에서, 일단 제2 정정 인자가 제2 온도 조절기에 적용되면, 제2 교정된 접촉식 온도 센서에 의해 감지된 온도 및 제1 교정된 비-접촉식 온도 센서에 의해 감지된 온도는 요구되는 설정값 온도를 위하여 실질적으로 동일할 수 있다.
[56] 아래의 표 1은 다수의 설정값 온도들을 위하여 장치된 웨이퍼를 사용하여 계산한 제1 정정 인자와 제1 교정된 비-접촉식 온도 센서를 사용하여 계산한 제2 정정 인자를 나타낸다.
설정값 온도(℃) | 제1 반응 챔버(제1 정정 인자(℃)) | 제2 반응 챔버(제2 정정 인자(℃)) | 델타(℃) |
550 | 12 | 17 | 5 |
600 | 12 | 14.5 | 2.5 |
700 | 12 | 15 | 3 |
850 | 13 | 14.5 | 1.5 |
950 | 12 | 12.5 | 0.5 |
[57] 표 1로부터 볼 수 있듯이, "델타"는 제1 정정 인자 및 제2 정정 인자 사이의 차이이며, "델타"는 여기 개시된 방법들을 채용한 반응 챔버 교정의 성취의 척도로서 인식될 수 있다. 도시된 것과 같이, 본 개시의 일부 예시적 실시예들에서, 제1 정정 인자와 제2 정정 인자 사이의 차이는 5℃보다 작다. 본 개시의 일부 예시적 실시예들에서, 제1 정정 인자와 제2 정정 인자 사이의 차이는 2℃보다 작다. 본 개시의 일부 예시적 실시예들에서, 제1 정정 인자와 제2 정정 인자 사이의 차이는 1℃보다 작다.
[58] 일부 실시예들에서, 제2 반응 챔버는 하나 또는 그 이상의 추가적인 접촉식 온도 센서들을 더 포함할 수 있다. 예를 들어, 도 2의 반응 챔버(220)는 서셉터(250) 아래에 및 가까이에서 다양한 위치들에 놓여진 하나 이상의 추가적인 서모커플들(도시되지 않음)을 포함할 수 있다. 추가적인 서모커플들은 퇴적 공정을 사용하여 교정될 수 있고, 이에 따라 웨이퍼 균일성 조정을 위한 장치된 웨이퍼의 필요성 및 "툴-대-툴 매칭"의 필요성을 방지할 수 있다.
[59] 본 개시의 일부 실시예들에서, 예를 들어 다결정 실리콘과 같은 막의 퇴적은 여기 설명된 열적 교정 방법들의 특성들을 결정하는 데 사용될 수 있다. 비한정적인 예시적 실시예로서, 폴리실리콘층이 예를 들어 실레인(SiH4)을 사용한 반응 속도-제한 영역(reaction rate-limited regime) 내에서 퇴적될 수 있다. 이러한 기술은 동일한 공정 레시피를 사용하는 툴들 사이의 성장 속도들 및 두께 패턴들을 비교함에 의해, 툴들 사이의 웨이퍼 온도의 비교를 가능하게 할 수 있다. 또한 상대적인 두께 변화가 알려져 있기 때문에, 이는 비-회전 웨이퍼 상의 균일한 퇴적을 얻도록 적절한 온도 오프셋들을 결정하는 데 사용될 수 있다.
[60] 여기 설명된 방법들을 채용하여 얻어질 수 있는 실험 결과들의 비한정적인 예시로서, 도 4는 모두 동일한 공정 레시피를 사용하여 퇴적된 폴리실리콘층을 포함하는 두 개의 반도체 웨이퍼들을 위한 ASM IntrepidTM XP 에피택시 퇴적 툴로부터 얻어진 두께 균일성 프로파일들을 나타낸다. 폴리실리콘 층들은 1kÅ 실리콘 산화물층을 포함하는 보론-도핑된 실리콘 웨이퍼들 상에, 감소된 압력(10 Torr), 고온(650℃) 비-선택적 SiH4계 폴리실리콘 퇴적 공정을 사용하여 성장되었다. 도 4를 계속 참조하면, 3D-두께 균일성 프로파일(410) 및 상면도 두께 균일성(420)은 장치된 웨이퍼, 예를 들어, TC-장치된 웨이퍼를 사용하여 열적 교정이 수행된 제1 반응 챔버 내에서 퇴적된 폴리실리콘층으로부터 측정된다. 3D-두께 균일성 프로파일(430) 및 상면도 두께 균일성(440)은 제1 교정된 비-접촉식 온도 센서를 사용하여 열적 교정이 수행된 제2 반응 챔버 내에서 퇴적된 폴리실리콘층으로부터 측정된다. 제1 반응 챔버 및 제2 반응 챔버 내에서 퇴적된 두 개의 폴리실리콘 층들을 위한 두께 균일성 프로파일들의 비교는 두 반응 챔버들 사이의 두께 균일성 매칭을 명백하게 나타낸다. 예를 들어, 제1 반응 챔버의 두께 균일성 프로파일(410)은 1069.37 옹스트롬의 평균 두께 값을 나타내는 한편, 제2 반응 챔버의 두께 균일성 프로파일(430)은 1117.39 옹스트롬의 평균 두께 값을 나타낸다. 제1 반응 챔버 및 제2 반응 챔버 내에서 퇴적된 두 개의 폴리실리콘 층 사이의 평균 두께 차이는 48 옹스트롬이며, 이는 제1 반응 및 제2 반응 사이의 온도 오프셋 1.8℃에 대응되고, 온도 오프셋은 공정 레시피를 위한 성장 속도(이러한 성장 조건들에서)가 27 옹스트롬/℃/초임을 알기 때문에 결정된다.
[61] 그러므로, 반응 챔버들을 열적 교정하기 위한 본 개시의 실시예들은 제1 반응 챔버 내에서 제1 막을 형성하는 단계, 예를 들어 퇴적하는 단계와, 동일한 공정 레시피를 사용하여 제2 반응 챔버 내에서 제2 막을 형성하는 단계, 예를 들어 퇴적하는 단계를 더 포함할 수 있다. 방법들은 제1 막의 평균 두께와 제2 막의 평균 두께 사이의 차이를 측정하는 단계와, 주어진 공정 레시피를 위한 알려진 막 성장을 아는 단계에 의해 제1 반응 챔버와 제2 반응 챔버 사이의 온도 오프셋을 계산하는 단계를 더 포함할 수 있다. 일부 실시예들에 있어서, 제1 반응 챔버와 제2 반응 챔버 사이의 온도 오프셋은 대략 5℃보다 작을 수 있다. 일부 실시예들에 있어서, 제1 반응 챔버와 제2 반응 챔버 사이의 온도 오프셋은 대략 3℃보다 작을 수 있다. 일부 실시예들에 있어서, 제1 반응 챔버와 제2 반응 챔버 사이의 온도 오프셋은 대략 2℃보다 작을 수 있다
[62] 본 개시의 방법의 실시예들은 추가적인 교정 공정 단계를 포함할 수 있다. 일부 실시예들에서, 반응 챔버들을 열적 교정하기 위한 방법들은, 제2 교정된 접촉식 온도 센서를 사용하여 제2 반응 챔버 내에서 제2 비-접촉식 온도 센서의 제2 교정 인자를 계산하는 단계와, 제2 교정된 비-접촉식 온도 센서를 제공하도록 제2 비-접촉식 온도 센서에 제2 교정 인자를 적용하는 단계를 더 포함할 수 있다. 더욱 상세하게는, 제2 반응 챔버는 도 2에 도시된 것과 같은 반응 챔버(220)를 포함할 수 있다. 일부 실시예들에서, 본 개시의 방법들은 제1 반응 챔버 내의 제2 비-접촉식 온도 센서가 예를 들어 도 2의 고온계(294)와 같은 고온계를 포함하도록 선택하는 단계를 포함할 수 있다. 본 개시의 일부 실시예들에서, 가열 성분들(280, 290)로부터 발산되는 복사를 방지하고 또한 쿼츠 챔버(220)에 의한 흡수를 우회하며, 이에 따라 고온계(294)가 웨이퍼(210)로부터의 복사를 수집하는 것이 가능하도록, 고온계(294)는 대략 3.3 ㎛의 파장에서 구동한다.
[63] 일부 실시예들에서, 제2 비-접촉식 온도 센서에 의해 감지된 온도는 조정될 수 있고, 즉, 반응 챔버(220) 내부의 웨이퍼(210)의 더욱 정밀한 온도 측정을 제공하도록 교정될 수 있다. 예를 들어, "제2 교정 인자"는 제2 비-접촉식 온도 센서에 의해 감지되는 온도에 대해 오프셋을 적용하도록 채용될 수 있다. 일부 실시예들에서, 제2 교정된 접촉식 온도 센서는 제2 교정 인자를 계산하는 단계에서 채용될 수 있다.
[64] 일부 실시예들에서, 제2 교정된 접촉식 온도 센서를 사용하여 제2 반응 챔버 내에서 제2 비-접촉식 온도 센서의 제2 교정 인자를 계산하는 단계는, 제2 비-접촉식 온도 센서에 의해 감지된 온도 측정을 제2 교정된 접촉식 센서에 의해 감지된 온도와 비교하는 단계와, 상기 비교에 기초하여 제2 교정 인자를 계산하는 단계를 더 포함한다. 더욱 상세하게는 도 2를 참조하면, 제2 반응 챔버(220)는 가열 성분들(280, 290)을 사용하여 제1 설정값까지 가열될 수 있다. 일단 제2 반응 챔버(220) 내의 온도가 제1 설정값에서 안정화되면, 제2 교정된 접촉식 온도 센서, 예를 들어 교정된 서모커플(292)에 의해 감지된 온도 측정은 제2 비-접촉식 온도 센서, 예를 들어 고온계(294)에 의해 감지된 온도와 비교될 수 있다. 제2 교정 인자는 두 개의 온도 측정들의 비교에 기초하여 계산될 수 있다.
[65] 일부 실시예들에서, 제2 교정된 접촉식 온도 센서를 사용하여 제2 반응 챔버 내에서 제2 비-접촉식 온도 센서의 제2 교정 인자를 계산하는 단계는 1회 또는 그 이상 반복될 수 있다. 예를 들어, 제2 반응 챔버(220)는 가열 성분들(280, 290)을 사용하여 제2 설정값까지 가열될 수 있고, 일단 제2 반응 챔버(220) 내의 온도가 제2 설정값에서 안정화되면, 제2 교정된 접촉식 온도 센서, 예를 들어 교정된 서모커플(292)에 의해 감지된 온도와 제2 비-접촉식 온도 센서, 예를 들어 고온계(294)에 의해 감지된 온도를 비교함에 의해 제2 설정값을 위하여 제2 교정 인자가 계산될 수 있다. 그러므로, 제2 교정은 반응 챔버 내에서 다수의 설정값 온도들을 위하여 계산될 수 있다.
[66] 일부 실시예들에서, 제2 교정된 접촉식 온도 센서를 사용하여 제2 반응 챔버 내에서 제2 비-접촉식 온도 센서의 제2 교정 인자를 계산하는 단계는, 제2 반응 챔버 내부로부터 제1 교정된 비-접촉식 온도 센서를 제거하는 단계를 더 포함할 수 있다. 본 개시의 또 다른 실시예들에서, 제1 교정된 비-접촉식 온도 센서가 제2 반응 챔버로부터 제거되고 제3 반응 챔버로 전달될 수 있다. 제1 교정된 비-접촉식 온도 센서는 이후 TC-장치된 웨이퍼의 필요성 없이 제3 반응 챔버를 열적으로 교정하도록 사용될 수 있다.
[67] 본 개시의 실시예들은 반응기 시스템을 또한 포함할 수 있고, 이러한 반응기 시스템들은 하나 또는 그 이상의 반응 챔버들의 열적 교정에서 사용될 수 있다. 이러한 반응기 시스템은 클러스터 툴 또는 다수의 반응 챔버들을 포함하는 다수의 뱃치 반응기들을 포함할 수 있다. 예를 들어, 더욱 상세하게는, 반응기 시스템은 제1 반응 챔버와 제2 반응 챔버를 포함할 수 있고, 제1 반응 챔버와 제2 반응 챔버는 반응 챔버(220)를 위하여 도 2에서 설명된 것과 유사하다. 제1 반응 챔버는 제1 온도 조절기와 결합된 제1 교정된 접촉식 온도 센서를 포함할 수 있고, 제2 반응 챔버는 제2 온도 조절기와 결합된 제2 교정된 접촉식 온도 센서를 포함할 수 있고, 추가적으로, 제2 반응 챔버는 제1 교정된 비-접촉식 온도 센서를 또한 포함할 수 있다.
[68] 본 개시의 일부 실시예들에서, 제1 반응 챔버와 제2 반응 챔버는 쿼츠 물질을 포함할 수 있고, 추가적인 실시예들에서, 제1 반응 챔버는 제2 반응 챔버와 본질적으로 동일하다.
[69] 일부 실시예들에서, 제1 교정된 접촉식 온도 센서는 제1 교정된 서모커플을 포함하고, 제2 교정된 접촉식 온도 센서는 제2 교정된 서모커플을 포함한다. 추가적으로, 일부 실시예들에서, 제1 교정된 비-접촉식 온도 센서는 제1 교정된 광학 고온계를 포함한다.
[70] 일부 실시예들에서, 제1 반응 챔버와 제2 반응 챔버 사이의 온도 오프셋은 대략 2℃보다 작다. 추가적으로 일부 실시예들에서, 제1 반응 챔버와 제2 반응 챔버는 제1 반응 챔버 및 제2 반응 챔버와 함께 배치된 적어도 하나의 기판을 가열하기 위하여 구성된 적어도 하나의 복사 가열 램프를 더 포함한다.
[71] 전술한 본 개시의 예시적 실시예들은, 이러한 실시예들이 본 발명의 실시예들의 단순한 예시들일 뿐이므로, 본 발명의 범위를 한정하지 않으며, 범위는 첨부된 청구항들 및 이들의 법적인 등가물들에 의해 한정된다. 임의의 등가 실시예들은 본 발명의 범위 내에 속하도록 의도된다. 실제로, 여기 설명되고 보여진 것들에 더하여 설명된 구성요소들의 대안적인 유용한 조합들과 같은 본 개시의 다양한 개조들은 본 명세서로부터 당업자에게 명백해질 수 있다. 이러한 개조들 및 실시예들은 첨부된 청구항들의 범위 내에 속할 것이 또한 의도된다.
Claims (27)
- 반응 챔버를 열적 교정하는 방법으로서,
제1 온도 센서를 사용하여 제1 반응 챔버 내에서 제1 접촉식 온도 센서의 제1 정정 인자(corrections factor)를 계산하는 단계;
제1 교정된 접촉식 온도 센서를 제공하도록 상기 제1 정정 인자를 제1 온도 조절기에 적용하는 단계;
상기 제1 교정된 접촉식 온도 센서를 사용하여 상기 제1 반응 챔버 내에서 제1 비-접촉식 온도 센서의 제1 교정 인자(calibration factor)를 계산하는 단계;
제1 교정된 비-접촉식 온도 센서를 제공하도록 상기 제1 교정 인자를 상기 제1 비-접촉식 온도 센서에 적용하는 단계;
상기 제1 교정된 비-접촉식 온도 센서를 제2 반응 챔버로 전달하는 단계;
상기 제1 교정된 비-접촉식 온도 센서를 이용하여 상기 제2 반응 챔버 내에서 제2 접촉식 온도 센서의 제2 정정 인자를 계산하는 단계; 및
제2 교정된 접촉식 온도 센서를 제공하도록 상기 제2 정정 인자를 제2 온도 조절기에 적용하는 단계를 포함하는 방법. - 청구항 1에 있어서,
상기 제1 온도 센서를 사용하여 상기 제1 반응 챔버 내에서 상기 제1 접촉식 온도 센서의 상기 제1 정정 인자를 계산하는 단계는,
상기 제1 접촉식 온도 센서에 의해 감지된 온도 측정을 상기 제1 온도 센서에 의해 감지된 온도 측정과 비교하는 단계; 및
상기 비교에 기초하여 상기 제1 정정 인자를 계산하는 단계를 포함하는 것을 특징으로 하는 방법. - 청구항 2에 있어서,
상기 제1 접촉식 온도 센서에 의해 감지된 온도 측정을 상기 제1 온도 센서에 의해 감지된 온도 측정과 비교하는 단계는 동시에 수행되는 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 제1 온도 센서가 장치된 웨이퍼(instrumented wafer)를 포함하도록 선택하는 단계를 더 포함하는 방법. - 청구항 1에 있어서,
상기 제1 접촉식 온도 센서와 제2 접촉식 온도 센서가 서모커플(thermocouple)을 포함하도록 선택하는 단계를 더 포함하는 방법. - 청구항 1에 있어서,
상기 제1 온도 조절기와 제2 온도 조절기가 PID 조절기를 포함하도록 선택하는 단계를 더 포함하는 방법. - 청구항 1에 있어서,
상기 제1 비-접촉식 온도 센서가 고온계(pyrometer)를 포함하도록 선택하는 단계를 더 포함하는 방법. - 청구항 1에 있어서,
상기 제1 비-접촉식 온도 센서의 상기 제1 교정 인자를 계산하는 단계는,
상기 제1 비-접촉식 온도 센서에 의해 감지된 온도 측정을 상기 제1 교정된 접촉식 온도 센서에 의해 감지된 온도 측정과 비교하는 단계; 및
상기 비교에 기초하여 상기 제1 교정 인자를 계산하는 단계를 포함하는 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 제2 접촉식 온도 센서의 상기 제2 정정 인자를 계산하는 단계는,
상기 제1 교정된 비-접촉식 온도 센서에 의해 감지된 온도 측정을 상기 제2 접촉식 온도 센서에 의해 감지된 온도 측정과 비교하는 단계; 및
상기 비교에 기초하여 상기 제2 정정 인자를 계산하는 단계를 포함하는 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 제1 반응 챔버와 상기 제2 반응 챔버 사이의 온도 오프셋(offset)은 2℃보다 작고, 상기 온도 오프셋은 공정 레시피를 위한 성장 속도로부터 결정되는 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 제2 접촉식 온도 센서를 사용하여 상기 제2 반응 챔버 내에서 제2 비-접촉식 온도 센서의 제2 교정 인자를 계산하는 단계; 및
제2 교정된 비-접촉식 온도 센서를 제공하도록 상기 제2 교정 인자를 상기 제2 비-접촉식 온도 센서에 적용하는 단계를 더 포함하는 방법. - 청구항 1에 있어서,
상기 제1 교정된 비-접촉식 온도 센서를 제3 반응 챔버로 전달하는 단계를 더 포함하는 방법. - 반응 챔버를 열적 교정하는 방법으로서,
제1 반응 챔버 내에서 제1 서모커플에 의해 감지된 온도를 상기 제1 반응 챔버 내에서 장치된 웨이퍼에 의해 감지된 온도와 비교함에 의해, 상기 제1 반응 챔버와 연관된 제1 온도 조절기에 제1 정정 인자를 계산하고 적용하는 단계;
상기 제1 서모커플에 의해 감지된 온도를 제1 고온계에 의해 감지된 온도와 비교함에 의해, 상기 제1 반응 챔버 내에서 상기 제1 고온계에 제1 교정 인자를 계산하고 적용하는 단계;
상기 제1 고온계를 제2 반응 챔버로 전달하는 단계; 및
상기 제2 반응 챔버 내에서 제2 서모커플에 의해 감지된 온도를 상기 제1 고온계에 의해 감지된 온도와 비교함에 의해, 상기 제2 반응 챔버와 연관된 제2 온도 조절기에 제2 정정 인자를 계산하고 적용하는 단계를 포함하는 방법. - 청구항 13에 있어서,
상기 제2 서모커플에 의해 감지된 온도를 제2 고온계에 의해 감지된 온도와 비교함에 의해, 상기 제2 반응 챔버 내에서 상기 제2 고온계에 제2 교정 인자를 계산하고 적용하는 단계를 더 포함하는 방법. - 청구항 13에 있어서,
상기 제1 반응 챔버 내에서 상기 제1 서모커플에 의해 감지된 상기 온도를 상기 제1 반응 챔버 내에서 상기 장치된 웨이퍼에 의해 감지된 상기 온도와 비교하는 단계는 동시에 수행되는 것을 특징으로 하는 방법. - 청구항 13에 있어서,
상기 제1 반응 챔버와 상기 제2 반응 챔버 사이의 온도 오프셋은 2℃보다 작고, 상기 온도 오프셋은 공정 레시피를 위한 성장 속도로부터 결정되는 것을 특징으로 하는 방법. - 청구항 13에 있어서,
상기 제1 반응 챔버와 상기 제2 반응 챔버는 쿼츠(quartz) 물질을 포함하는 것을 특징으로 하는 방법. - 청구항 13에 있어서,
상기 제1 고온계를 제3 반응 챔버로 전달하는 단계를 더 포함하는 방법. - 청구항 13에 있어서,
상기 제1 정정 인자 및 상기 제2 정정 인자 사이의 차이는 3℃보다 작은 것을 특징으로 하는 방법. - 삭제
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