KR102581473B1 - 기상 반응물을 반응 챔버로 디스펜싱하는 장치 및 이와 관련된 방법 - Google Patents
기상 반응물을 반응 챔버로 디스펜싱하는 장치 및 이와 관련된 방법 Download PDFInfo
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Abstract
기상 반응물을 반응 챔버에 디스펜싱하는 장치가 개시된다. 상기 장치는 소스 화학물질을 제1 충진레벨로 유지하도록 구성된 제1 챔버, 및 상기 소스 화학물질을 제2 충진레벨로 유지하도록 구성되고 상기 제1 충진레벨 및 상기 제2 충진레벨 아래의 유체 채널을 통해 상기 제1 챔버와 유체 연통하는 제2 챔버를 포함할 수 있다. 상기 장치는 또한, 캐리어 가스를 상기 제1 챔버 내로 흐르게 해서 상기 소스 화학물질의 증기가 상기 캐리어 가스에 혼입되어 기상 반응물을 생성하도록 구성된 캐리어 가스 공급 라인과 유체 연통하는 제1 챔버 유입구 개구; 상기 제1 챔버로부터 상기 기상 반응물을 디스펜싱하도록 구성되며 가스 유출구 라인과 유체 연통하는 제1 챔버 유출구 개구; 및 상기 제2 챔버 내 가압 가스의 흐름을 제어하여 상기 제 1 챔버 내 상기 제1 충진레벨을 제어하도록 구성된 유량 제어기를 구비한 가압 가스 공급과 유체 연통하는 제2 챔버 유입구 개구를 포함할 수 있다. 기상 반응물을 디스펜싱하는 방법이 또한 제공된다.
Description
본 개시는 일반적으로 기상 반응물을 반응 챔버에 디스펜싱하는 장치 및 특히 연장 기간 동안 기상 반응물의 매우 안정적인 흐름을 반응 챔버에 디스펜싱하는 장치에 관한 것이다. 본 개시는 또한 기상 반응물을 반응 챔버에 디스펜싱하는 방법을 포함한다.
반도체 공정 처리 장치는 일반적으로 예를 들어, 증착 공정, 세정 공정 및 에칭 공정과 같은 반도체 기판 공정을 수행하기 위한 소스 화학물질(source chemicals)로서 하나 이상의 기상 반응물, 즉 전구체를 사용한다. 기상 반응물은 일반적으로 화학물질 보틀(또한 일반적으로 화학물질 앰퓰이라고 지칭됨)에 저장된다.
고용량 반도체 제조 설비는 다량의 기상 반응물을 활용할 수 있어서, 화학물질 앰퓰을 추가 전구체로 정기적으로 재충전하거나, 또는 다 사용한 화학물질 앰퓰을 가득찬 화학물질 앰퓰로 빈번하게 교환하도록 요구 사항이 생긴다.
그러나, 화학 앰퓰의 재충전을 위해 쉽게 적응할 수 없는 일부 형태의 전구체가 있으며, 예를 들어, 특정 전구체는 쉽게 분해되거나, 특정한 전구체가 재충전 절차 동안 화학물질 앰퓰의 내부 표면에 강하게 부착될 수 있다. 또한, 가득찬 화학물질 앰퓰로 다 사용한 화학물질 앰퓰의 교환은 반도체 공정 장치에 대한 바람직하지 못한 정지 시간을 야기할 수 있으며, 또한 다수의 화학물질 앰퓰의 안전 보관의 필요성을 요구할 수 있다. 따라서 화학물질 앰퓰 교환 또는 화학물질 앰퓰 재충전의 빈도수를 제한하기를 원한다.
화학물질 앰퓰 교환 또는 화학물질 앰퓰 재충전의 빈도수를 줄이기 위한 한 가지 기본 방법은 화학물질 앰퓰의 크기를 증가시켜 화학물질 앰퓰에 더 많은 소스 화학물질을 저장할 수 있게 허용하는 것이다. 그러나 화학물질 앰퓰은 일반적으로 소스 화학물질을 작동 온도까지 가열되어야 하고, 안정적이고 반복적인 반도체 공정 처리 성능은 화학물질 앰퓰에 저장된 전구체에 걸쳐 온도 구배가 최소화되는 것을 필요로 한다. 예를 들어, 화학물질 앰퓰은 벨트 히터라 지칭되는 히터의 형태로 가열될 수 있으며, 상기 벨트 히터는 화학물질 앰플의 외부 표면 주위를 감아서 둘러싼다. 그러나, 화학물질 앰퓰의 크기가 증가함에 따라, 벨트 히터에 의해 제공되는 열의 증가된 비율은 화학물질 앰퓰의 외부 표면에서 바람직하지 않게 흡수될 수 있고, 이에 따라 화학물질 앰퓰에 걸쳐 바람직하지 않은 온도 구배와 반도체 제조 공정에서의 결과적인 열화를 생성한다.
더 큰 화학물질 앰퓰을 가열하는 것과 관련된 문제 외에, 화학물질 앰퓰의 업 사이즈로 인해 추가적인 공정 문제가 생길 수 있다. 예를 들어, 원자층 증착 공정과 같은 증착 공정은 재료의 증착을 위한 화학물질 소스(들)로서 하나 이상의 화학물질 앰퓰을 활용할 수 있다. 화학물질 앰퓰 내부의 전구체의 증기압을 안정화시키기 위해서, 제품 기판을 실행하기 전에 안정화 공정을 수행할 필요가 있을 수 있다. 이 안정화 공정은 소중한 공정 처리 시간을 소모할 수 있으며, "더미시간(dummy time)"으로 지칭될 수 있다. 화학물질 앰퓰의 체적이 증가함에 따라, 화학물질 앰퓰 내의 전구체의 증기압을 안정화시키는 데 요구되는 "더미시간(dummy time)"이 또한 현저하게 증가하여, 값진 공정 처리 시간을 낭비하고 소중한 전구체를 소비한다는 것이 밝혀졌다.
화학물질 앰퓰은 하나 이상의 캐리어 가스 소스에 연결될 수 있다. 캐리어 가스는 화학물질 앰퓰 내로 유입되고 화학물질 앰퓰 내에 유지된 소스 화학물질, 즉 전구체의 노출된 표면 위로 끌린다. 소스 화학물질의 결과적인 기화는 소스 화학물질의 증기가 캐리어 가스에 동반되어 반응 챔버에 디스펜싱될 수 있는 기상 반응물을 생성하게 한다. 소스 화학물질의 최대 기화 속도는 캐리어 가스 유입구 바로 아래에서, 즉 캐리어 가스 흐름이 소스 화학물질에 가장 가까운 곳에서 발생하는 것으로 밝혀졌다. 또한, 소스 화학물질이 소비됨에 따라 소스 화학물질의 충진레벨이 감소되어 캐리어 가스 입구와 소스 화학물질의 노출 표면 사이의 거리가 증가하는 것으로 밝혀졌다. 캐리어 가스 유입구와 소스 화학물질의 노출 표면 사이의 거리 증가는 화학물질 앰퓰로부터 반응 챔버로의 기상 반응물 흐름의 원하지 않는 변화를 초래할 수 있다. 예를 들어, 소스 화학물질이 소비되고 캐리어 가스 유입구와 소스 화학물질의 표면 사이의 거리가 증가함에 따라, 화학물질 앰퓰로부터 반응 챔버로의 기상 반응물의 흐름이 감소하여 반도체 공정 처리 조건에 있어서 바람직하지 못한 변화를 초래할 수 있다.
따라서, 장치 및 방법은 연장 기간 동안 대량의 화학물질 앰퓰로부터 반응 챔버로 기상 반응물의 매우 안정적인 흐름을 디스펜싱하는 데 바람직하다.
본 발명의 내용은 선정된 개념을 단순화된 형태로 소개하기 위해 제공된다. 이들 개념은 하기의 본 개시의 예시적 구현예의 상세한 설명에 더 상세하게 기재되어 있다. 이러한 내용은 청구된 요지의 주된 특징 또는 필수적인 특징을 구분하려는 의도가 아니며 청구된 요지의 범주를 제한하기 위해 사용하려는 의도 또한 아니다.
본 개시의 일부 구현예에서 기상 반응물을 반응 챔버로 디스펜싱하는 장치가 제공된다. 상기 장치는 소스 화학물질을 제1 충진레벨로 유지하도록 구성된 제1 챔버, 및 소스 화학물질을 제2 충진레벨로 유지하고 상기 제1 충진레벨 및 상기 제2 충진레벨 아래의 유체 채널을 통해 상기 제1 챔버와 유체 연통하도록 구성된 제2 챔버를 포함할 수 있다. 상기 장치는 또한, 캐리어 가스를 상기 제1 챔버 내로 흐르게 하여 상기 소스 화학물질의 증기가 캐리어 가스에 혼입되어 기상 반응물을 생성하도록 구성된 캐리어 가스 공급 라인과 유체 연통하는 제1 챔버 유입구 개구를 포함할 수 있다. 상기 장치는 가스 유출구 라인과 유체 연통하며 상기 제1 챔버로부터 상기 기상 반응물을 디스펜싱하도록 구성된 제1 챔버 유출구 개구; 및 상기 제2 챔버 내 가압 가스의 흐름을 제어하여 상기 제1 챔버 내 상기 제1 충진레벨을 제어하도록 구성된 유량 제어기를 구비한 가압 가스 공급 라인과 유체 연통하는 제2 챔버 유입구 개구를 더 포함할 수 있다.
본 개시의 구현예는 또한 기상 반응물을 반응 챔버에 디스펜싱하는 방법을 제공할 수 있다. 상기 방법은 소스 화학물질을 제1 충진레벨로 유지하도록 구성된 제1 챔버를 제공하는 단계, 및 상기 소스 화학물질을 제2 충진레벨로 유지하고 유체 채널을 통해 상기 제1 챔버와 유체 연통하도록 구성된 제2 챔버를 제공하는 단계를 포함할 수 있다. 상기 방법은 또한, 캐리어 가스를 제1 챔버 유입구 개구를 통해 제1 챔버 내로 흐르게 하는 단계(상기 캐리어 가스를 상기 제1 챔버 내로 흐르게 하는 단계는 상기 소스 화학물질의 증기가 상기 캐리어 가스와 혼입되어 기상 반응물을 생성하도록 함), 및 유출구 가스 라인과 유체 연통하는 제1 챔버 유출구 개구를 통해 제1 챔버로부터 상기 기상 반응물을 디스펜싱하는 단계를 포함할 수 있다. 상기 방법은 제2 챔버 유입구 개구를 통해 상기 제2 챔버 내로 유입되는 가압 가스의 흐름을 제어하여 상기 제1 충진레벨을 실질적으로 일정한 레벨로 조절하는 단계를 더 포함할 수 있다.
본 명세서는 본 발명의 구현예로 간주되는 것을 특별히 지적하고 명백하게 주장하는 청구범위로 결론을 내지만, 본 개시의 구현예들의 장점들은 첨부한 도면들과 관련하여 읽을 때 본 개시의 구현예들의 특정 예의 설명으로부터 더욱 쉽게 확인될 수 있고, 도면들 중:
도 1은 본 개시의 구현예에 따라 반응 챔버에 기상 반응물을 디스펜싱하기 위한 화학물질 전달 장치의 개략도이다.
도 2a는 본 개시의 구현예에 따라 반응 챔버에 기상 반응물을 디스펜싱하기 위한 대안적인 화학물질 전달 장치의 개략도이다.
도 2b는 본 개시의 구현예에 따라 반응 챔버에 기상 반응물을 디스펜싱하기위한 대안적인 화학물질 전달 장치의 단면 개략도이다.
도 3은 본 개시의 구현예에 따라 온도 제어식 화학물질 디스펜싱 장치의 분해도이다.
도 4는 본 개시의 구현예에 따라 반응 챔버에 기상 반응물을 디스펜싱하기 위한 예시적인 공정 흐름도를 도시한다.
도 1은 본 개시의 구현예에 따라 반응 챔버에 기상 반응물을 디스펜싱하기 위한 화학물질 전달 장치의 개략도이다.
도 2a는 본 개시의 구현예에 따라 반응 챔버에 기상 반응물을 디스펜싱하기 위한 대안적인 화학물질 전달 장치의 개략도이다.
도 2b는 본 개시의 구현예에 따라 반응 챔버에 기상 반응물을 디스펜싱하기위한 대안적인 화학물질 전달 장치의 단면 개략도이다.
도 3은 본 개시의 구현예에 따라 온도 제어식 화학물질 디스펜싱 장치의 분해도이다.
도 4는 본 개시의 구현예에 따라 반응 챔버에 기상 반응물을 디스펜싱하기 위한 예시적인 공정 흐름도를 도시한다.
특정 구현예 및 실시예가 아래에 개시되었지만, 당업자는 본 발명이 구체적으로 개시된 구현예 및/또는 본 발명의 용도 및 이들의 명백한 변형 및 등가물 너머로 연장된다는 것을 이해할 것이다. 따라서, 개시된 발명의 범주는 후술되는 구체적으로 개시된 구현예에 의해 제한되지 않도록 의도된다.
본원에 제시된 예시는 임의의 특정한 물질, 구조, 또는 소자의 실제 뷰를 의도하려 하는 것은 아니며, 단지 본 개시의 구현예를 설명하기 위해 사용되는 이상화된 표현이다.
본 개시의 구현예는 기상 반응물을 반응 챔버로 디스펜싱하는 장치와 방법을 포함할 수 있다. 특히, 본 개시의 구현예는 연장 기간 동안 반도체 반응 챔버에 기상 반응물의 매우 안정적인 흐름을 디스펜싱할 수 있는 장치를 포함할 수 있다.
디스펜싱 장치 내에 유지된 소스 화학물질의 체적을 가로지르는 온도 구배, 즉 온도 차이와 관련된 문제점은, 화학물질 디스펜싱 장치에 통합된 둘 이상의 독립적으로 제어되는 가열 장치의 채용에 의해 완화될 수 있다. 예를 들어, 둘 이상의 독립적으로 제어되는 가열 장치는 화학물질 디스펜싱 장치의 전략적 위치에 배치될 수 있다. 따라서, 둘 이상의 독립적으로 제어되는 가열 장치는 소스 화학물질의 체적을 가로지르는 온도 구배를 최소화하고, 이에 의해 반응 챔버에 균일한 형태의 기상 반응물을 제공한다.
또한, 바람직하지 않은 전구체 안정화 시간 및 연장 기간에 걸친 기상 반응물 흐름의 변화와 관련된 문제점은 두 개의 챔버 화학물질 앰퓰을 활용함으로써 해결될 수 있다(여기서, 두 개의 챔버는 서로 유체 연결됨). 가압 가스가 제2 챔버 내의 소스 화학물질의 표면 위로 제어된 압력을 도입할 수 있도록, 압력 제어 유닛은 제2 챔버 내로 가압 가스 공급 라인과 결합될 수 있다. 제2 챔버 내의 소스 화학물질에 대한 제어된 압력은 이로써 제2 챔버의 충진레벨, 즉 소스 화학물질의 노출 표면의 레벨을 조절할 수 있다. 제1 챔버가 제2 챔버에 유체 연결되기 때문에, 제2 챔버의 충진레벨을 제어하는 능력으로 인해서 결과적으로 제1 챔버 내의 충진레벨을 제어할, 즉 조절할 수 있는 능력을 갖게 된다. 따라서 2 개의 챔버 화학물질 디스펜싱 장치는, 장치의 디스펜싱 부분에서 캐리어 가스 유입구와 소스 화학물질의 노출 표면 사이의 거리를 실질적으로 유지할 수 있어서, 감소된 안정화 시간과 연장 기간에 걸쳐 보다 안정한 기상 반응물 흐름 결과를 갖는다.
본 개시의 구현예에 따라 반응 챔버에 기상 반응물을 디스펜싱하기 위한 화학물질 디스펜싱 장치의 개략도를 도시하는 도 1을 참조하여 본 개시의 구현예는 보다 상세하게 이해될 수 있다. 보다 상세하게, 반응 챔버에 기상 반응물을 전달하기 위한 장치(100)는 소스 화학물질(104)을 유지하도록 구성된 제1 챔버(102) 및 소스 화학물질(104')을 유지하도록 구성된 제2 챔버(106)를 포함할 수 있다. 제1 챔버(102)와 제2 챔버(106)는 제1 챔버(102)와 제2 챔버(106) 사이에 배치된 유체 채널(108)의 결과로서 서로 유체 연통될 수 있다. 제1 챔버(102) 및 제2 챔버(106)는 서로 유체 연통하기 때문에, 제1 챔버(102) 및 제2 챔버(106) 내에 배치된 소스 화학물질(104 및 104')은 공통 소스 화학물질을 포함할 수 있고, 즉 제1 챔버(102)와 제2 챔버(106) 모두 그 안의 소스 화학물질은 동일하다.
본 개시의 일부 구현예에서, 제1 챔버(102)는 2 개의 챔버 사이에 배치된 채널(114)을 활용하여 제2 챔버(106)로부터 부분적으로 분리될 수 있으며, 채널(114)의 베이스는 유체 채널(108)의 상부 표면을 형성하고, 제1 챔버(102) 및 제2 챔버(106)의 공동 베이스는 유체 채널(108)의 베이스를 형성한다. 다른 구현예에서, 두 챔버 사이에 제약받지 않는 유체 채널을 유지하면서도 예를 들어, 물리적 구획과 같은 물리적 장벽은 제1 챔버(102)와 제2 챔버(106) 사이에 부분적으로 배치될 수 있다.
본 개시의 일부 구현예에서, 제1 챔버(102) 내에 유지되는 소스 화학물질(104)은 제1 충진레벨(110)까지 채워질 수 있으며 즉, 제1 충진레벨(110)은 제1 챔버(102) 내부에 배치된 소스 화학물질(104)의 최상 노출 표면의 레벨을 지시한다. 본 개시의 일부 구현예에서, 제2 챔버(106) 내에 유지되는 소스 화학물질(104')은 제2 충진레벨(112)까지 채워질 수 있으며 즉, 제2 충진레벨(112)은 제2 챔버(106) 내부에 배치된 소스 화학물질(104')의 최상 노출 표면의 레벨을 지시한다. 평형 조건 하에서, 제1 챔버(102)와 제2 챔버(106) 사이의 유체 연통으로 인해 제1 충진레벨(110)과 제2 충진레벨(112)은 실질적으로 동일하고, 제1 챔버(102)와 제2 챔버(106) 사이의 유체 채널은 제1 충진레벨 및 제2 충진레벨 아래에 배치된다.
본 개시의 일부 구현예에서, 제1 충진레벨(110) 및 제2 충진레벨은 하나 이상의 액체 레벨 센서를 이용하여 모니터링될 수 있다. 예를 들어, 액체 레벨 센서(116)는 제1 챔버(102) 내에 배치될 수 있고, 제1 챔버(102) 내의 제1 충진레벨(110)의 위치가 모니터링될 수 있도록 소스 화학물질(104)과 접촉할 수 있다. 일부 구현예에서, 디스펜싱 장치(100)는 또한 제2 챔버(106) 내에 추가적인 액체 레벨 센서(118)을 포함할 수 있으며, 제2 챔버(106) 내 제2 충진레벨(112)의 위치 또한 모니터링될 수 있도록 소스 화학물질(104')을 접촉할 수 있다.
디스펜싱 장치(100)는 또한 캐리어 가스 공급 라인(122)과 유체 연통하는 제1 챔버 유입구 개구(120)를 포함할 수 있다. 또한, 캐리어 가스 공급 라인(122)은 캐리어 가스의 제1 챔버(102) 내로의 흐름을 제어하기 위한 밸브(125)를 포함할 수 있다. 제1 챔버 유입구 개구(120) 및 캐리어 가스 공급 라인(122)은 제1 충진레벨(110) 위의 제1 챔버(102) 내로 캐리어 가스를 흐르게 하여 소스 화학물질(104)의 증기가 캐리어 가스 내에 혼입되어 기상 반응물을 생성하도록 구성될 수 있다.
본 개시의 일부 구현예에서, 디스펜싱 장치(100)는 또한 가스 유출구 라인(126)과 유체 연통하고 기상 반응물을 제1 챔버(102)로부터 디스펜싱하도록 구성된 제1 챔버 유출구 개구(124)를 포함할 수 있다. 또한, 가스 유출구 라인(126)은 제1 챔버(102) 밖으로의 기상 반응물의 흐름을 제어하기 위한 밸브(128)를 포함할 수 있다. 가스 유출구 라인(126)은 반도체 공정 처리 장치의 반응 챔버에 공급되도록, 제1 챔버(102)로부터 디스펜싱된 기상 반응물은 반도체 제조 공정에 활용될 수 있다.
디스펜싱 장치(100)는 또한 가압 가스 공급 라인(132)과 유체 연통하는 제2 챔버 유입구 개구(130)를 포함할 수 있다. 본 개시의 일부 구현예에서, 가압 가스 공급 라인(132)은 제2 충진레벨(112) 위에 가압 가스를 흐르게 하도록 구성되며, 가압 가스는 제1 챔버(102)내 제1 충진레벨(110)의 레벨을 실질적으로 유지하도록 구성된다. 또한, 가압 가스 공급 라인(132)은 가압 가스 공급 라인(132) 상에 배치되고 제2 챔버(106) 내의 제2 충진레벨(112) 위의 압력을 제어하도록 구성된 압력 제어 유닛(134)을 포함할 수 있다. 압력 제어 유닛(134) 이외에, 가압 가스 공급 라인(132)은 가압 가스의 제2 챔버(106) 내로의 흐름을 제어하기 위한 밸브(135)를 더 포함할 수 있다.
보다 상세하게, 캐리어 가스(예, 질소 또는 아르곤)가 캐리어 가스 공급 라인(122)으로 공급됨에 따라, 캐리어 가스는 제1 챔버(102) 내의 제1 충진레벨(110) 위의 체적 내로 흐르고 소스 화학물질로부터 증기를 픽업한다. 소스 화학물질은 캐리어 가스 내에 혼입되어 가스 유출구 라인(126)을 통해 반응 챔버에 디스펜싱될 수 있는 기상 반응물을 생성하게 된다. 캐리어 가스를 흐르게 하고, 캐리어 가스가 소스 화학물질 증기와 혼입되어 가스 유출구 라인(126)을 통해 제1 챔버 밖으로 기상 반응물을 디스펜싱하는 공정은, 디스펜싱 장치(100) 내의 소스 화학물질의 체적을 감소시키고, 시정 조치 없이 제1 충진레벨의 레벨(및 결과적으로 제2 충진레벨의 레벨)은 원래 위치 아래로 감소할 것이다. 전술한 바와 같이, 제1 챔버 유입구 개구(120)와 제1 충진레벨(110) 사이의 거리가 증가함에 따라 제1 챔버(102)로부터 디스펜싱된 기상 전구체의 유속은 또한 감소할 수 있고, 바람직하지 않은 공정 변화를 초래한다. 제1 충진레벨(110)의 레벨의 감소를 극복하기 위해, 가압 가스가 가압 가스 공급 라인(132)을 통해 제2 챔버(106)로 공급될 수 있다. 가압 가스는 압력 제어 유닛(134)을 활용하여 제2 챔버(106)의 제2 충진레벨(112) 위의 압력을 제어 가능하게 증가시킬 것이며, 압력 증가는 제2 챔버(106)의 제2 충진레벨(112)을 더 감소시킬 것이다. 제2 챔버(106) 및 제1 챔버(102)는 유체 채널(108)을 통해 서로 유체 연통하기 때문에, 임의의 압력 유도로 인한 제2 챔버(106) 내의 제2 충진레벨(112) 감소로 인해 제1 챔버(102) 내의 제1 충진레벨(110)의 레벨은 증가한다. 따라서, 제1 챔버 유입구(120)와 제1 충진레벨(110) 간 거리의 임의의 증가는 제2 챔버(106) 내의 소스 화학물질 위의 압력을 증가시킴으로써 보상될 수 있다.
본원에 개시된 바와 같이, 상기 장치는 2 개의 유체 연결된 챔버 및 가압 가스 공급 라인을 포함하는 화학물질 디스펜싱 장치를 포함하고 활용할 수 있어서, 제1 챔버 내의 제1 충진레벨의 레벨을 실질적으로 유지한다. 추가적으로 또는 대안적으로, 소스 화학물질의 소비로 인한 제1 충진레벨 (110)의 레벨 감소는 디스펜스 장치(100) 내로의 추가 소스 화학물질의 첨가에 의해 상쇄될 수 있으며, 이에 의해 소스 화학물질이 활용될 때 소스 화학물질을 보충하고 결과적으로 제1 충진레벨(110)의 레벨을 유지한다. 따라서, 본 개시의 일부 구현예에서, 디스펜싱 장치(100)는 추가의 소스 화학물질(104')을 제2 챔버(106) 내로 흐르게 하도록 구성된 증기 공급 라인(138)과 유체 연통하는 추가의 제2 챔버 유입구 개구(136)를 더 포함할 수 있다. 추가적으로, 증기 공급 라인(138)은 제2 챔버(106) 내로의 추가 소스 화학물질(104')의 흐름을 제어하기 위한 밸브(140)를 또한 포함할 수 있다.
본 개시의 일부 구현예에서, 추가적인 소스 화학물질은 제1 챔버(102) 내로의 적절한 추가 유입구 개구를 통해 제1 챔버(102) 내로 공급될 수 있다(미도시). 따라서, 제1 챔버 및 제2 챔버 중 하나 또는 모두 제1 챔버(102)에서 제 1 충진레벨(110)의 레벨을 유지하기 위해 추가의 소스 화학물질로 보충될 수 있다.
본 개시의 구현예에 따른 화학물질 디스펜싱 장치의 다른 구성이 도 2a 및 도 2b에 도시되어 있으며, 도 2a는 화학물질 전달 장치의 3차원 개략도를 포함하고, 도 2b는 도 2a에서 참조된 A-A 평면에 의해 표시된 평면을 통한 동일한 화학물질 전달 장치의 단면도를 도시한다. 도 2b에 도시된 단면도는 평형 위치에서 화학물질 전달 장치를 표현하는 것에 주목해야 한다.
보다 상세하게, 화학물질 디스펜싱 장치(200)는 소스 화학물질을 제1 충진레벨(210)까지 유지하도록 구성된 제1 챔버(202), 즉 내부 챔버를 포함한다. 화학물질 디스펜싱 장치(200)는 또한 소스 화학물질을 제2 충진레벨(212)까지 유지하도록 구성된 제2 챔버(206), 즉 외부 챔버를 포함한다. 제1 챔버(내부 챔버)(202) 및 제2 챔버(외부 챔버)(206)는 유체 채널(208)을 통해 서로 유체 연통한다.
본 개시의 일부 구현예에서, 제1 챔버(202)는 캐리어 가스를 상기 제1 챔버(202) 내 제1 충진레벨(210) 위로 흐르게 하여 상기 소스 화학물질(204)의 증기가 상기 캐리어 가스에 혼입되어 기상 반응물을 생성하도록 구성된 캐리어 가스 공급 라인(222)과 유체 연통하는 제1 챔버 유입구 개구(220)를 더 포함한다. 추가적인 밸브(225)가 제1 챔버(202) 내로의 캐리어 가스의 흐름의 추가 제어를 제공하기 위해, 캐리어 가스 공급 라인(222) 상에 배치될 수 있다(도 2b 참조).
본 개시의 일부 구현예에서, 제1 챔버(202)는 또한 가스 유출구 라인(226)과 유체 연통하고 기상 반응물을 제1 챔버로부터 디스펜싱하도록 구성된 제1 챔버 유출구(224)를 포함할 수 있다. 비록 도 2a 및 도 2b에 나타나지는 않았지만, 가스 유출구 라인(226)은 연장되어 반도체 공정 처리 장치의 반응 챔버와 유체 연통할 수 있으며, 이에 의해 기상 반응물이 반응 챔버에 디스펜싱되도록 허용한다. 가스 유출구 라인(226)은 제1 챔버(202)로부터의 기상 반응물의 흐름의 추가 제어를 제공하기 위한 추가 밸브(228)를 더 포함할 수 있다(도 2b 참조).
도 2a 및 도 2b의 화학물질 디스펜싱 장치는 또한, 제2 충진레벨(212) 위에 가압 가스를 흐르게 하도록 구성된 가압 가스 공급 라인(234)과 유체 연통하는 제2 챔버 유입구 개구(230)를 포함할 수 있으며, 가압 가스는 제1 챔버(202)의 즉, 도 2a 및 도 2b의 내부 챔버의 제1 충진레벨(210)의 레벨을 실질적으로 유지하도록 구성된다.
제2 챔버(206) 내 제2 충진레벨(212) 위의 압력을 더 제어하기 위해, 화학물질 디스펜싱 장치(200)는 가압 가스 공급 라인(232) 상에 배치된 압력 제어 유닛(234)을 포함할 수 있으며, 상기 압력 제어 유닛(234)은 제2 챔버(206) 내 제2 충진레벨(212) 위로 압력을 조절하도록 구성된다.
일부 구현예에서, 제2 챔버(206), 즉 외부 챔버는 제2 챔버(204)로부터의 가압 가스의 적어도 일부를 방출하도록 즉, 가스 유출구 라인(238)을 통해 제2 챔버(206)로부터 가압 가스를 방출하도록 구성된 가스 유출구 라인(238)과 유체 연통하는 제2 챔버 유출구 개구(236)를 더 포함할 수 있으며, 상기 가스 유출구 라인은 제2 챔버 내 제2 충진레벨의 압력을 제어하기 위해 추가로 활용될 수 있다. 제2 챔버(206) 내의 제2 충진레벨(212) 위의 압력의 추가적인 제어는 가스 유출구 라인(238) 상에 배치된 밸브(240)에 의해 제공될 수 있다(도 2b 참조).
제1 챔버(202) 내의 제1 충진레벨(210)의 레벨 조절을 추가로 돕기 위해, 디스펜싱 장치(200)는 하나 이상의 액체 레벨 센서를 더 포함할 수 있다. 예를 들어, 하나 이상의 액체 레벨 센서로부터 기록된 데이터는 가압 가스 공급 라인(232) 상에 배치된 압력 제어 유닛(234)의 조절을 가능하게 하는 피드백 회로에 활용될 수 있다. 비제한적인 예로서, 액체 레벨 센서(216)는 제1 챔버(202) 내에 배치되고 제1 챔버(202)와 함께 유지되는 소스 화학물질(204)과 접촉할 수 있다. 본 개시의 추가 구현예에서, 추가적인 액체 레벨 센서(218)는 제2 챔버(206) 내에 배치될 수 있고, 제2 챔버(206)와 함께 유지되는 소스 화학물질(204')과 접촉할 수 있다.
도 2a 및 도 2b에는 나타나지 않았지만, 화학물질 디스펜싱 장치(200)는 제1 챔버(202) 및 제2 챔버(206) 중 하나 또는 모두에 추가적인 유입구 개구를 더 포함할 수 있으며, 상기 추가적인 유입구 개구는 추가 소스 화학물질을 제1 챔버(202) 및 제2 챔버(206) 중 하나 또는 모두에 흐르게 하도록 구성된 가스 공급 라인과 유체 연통한다. 화학물질 디스펜싱 장치(200)로 소스 화학물질을 재충전하는 능력은 제1 챔버(202) 내의 제1 충진레벨(210)의 레벨의 추가 조절을 허용한다.
본 개시의 일부 구현예에서, 제1 챔버(202)는 내부 실린더를 포함할 수 있다. 일부 구현예에서, 내부 실린더는 상부 벽을 포함하며, 상부 벽은 가스의 유입구 및 유출구를 위해 구성된 다수의 개구(220, 224) 및 액체 레벨 센서(216)의 삽입을 위해 구성된 추가 개구를 포함한다. 일부 구현예에서, 내부 실린더는 측벽 및 개방 베이스 영역을 추가로 포함하고, 개방 베이스 영역은 유체 채널(208)을 통해 제2 챔버(206)와 유체 연통을 허용한다.
본 개시의 일부 구현예에서 제2 챔버(206)는 내부 실린더와 동심으로 배치되고 내부 실린더를 둘러싸며 부분적으로 중공(hollow)인 외부 실린더를 포함할 수 있다(도 2a 참조). 제2 챔버(206), 즉 외부 실린더는 제2 챔버의 베이스 영역의 일부가 제1 챔버(202)와 제2 챔버(206) 사이의 유체 채널(208)의 베이스를 포함하므로 부분적으로 중공일 수 있다.
본 개시의 다른 구현예에서, 화학물질 디스펜싱 장치(200)는 내부 실린더(제1 챔버(202))와 외부 실린더(제2 챔버(204)) 사이에 배치된 채널(214)을 포함한다. 채널(214)은 형태상 원형이고 내부 실린더에 동심일 수 있지만 다른 구성이 활용될 수 있다. 채널(214)은 제1 챔버(204)의 상부 벽으로부터 아래쪽으로 그리고 내부 실린더의 측벽에 인접하게 연장될 수 있으며, 장치의 베이스 전에 종결될 수 있고, 채널(214)의 베이스는 제1 챔버(202)와 제2 챔버(206) 사이의 유체 채널(208)의 상부 벽의 일부를 포함한다.
본 개시의 구현예는 또한 디스펜싱 장치 내에 유지된 소스 화학물질의 체적에 걸친 온도 구배, 즉 열적 차이를 최소화하기 위한 화학물질 디스펜싱 장치 및 특정 장치를 가열하는 장치를 포함할 수 있다. 본 개시의 구현예는 도 2a 및 도 2b의 화학물질 디스펜싱 장치(200)를 가열하기 위한 장치를 포함할 수 있으나, 본원에 기술된 장치는 대안적으로 화학물질 디스펜싱 장치를 균일하게 가열하는 데 활용될 수 있다.
보다 상세히 도 3을 참조하여 온도 제어식 화학물질 디스펜싱 장치(300)는 제1 가열 장치(302), 제2 가열 장치(304) 및 화학물질 디스펜싱 장치(200)를 포함할 수 있다. 전술한 바와 같이, 화학물질 디스펜싱 장치(200)는 제1 챔버(202), 즉 내부 실린더 및 제2 챔버(206), 즉 외부 실린더를 포함할 수 있다. 제1 챔버(202)와 제2 챔버(204) 사이에는 형태상 원형이고 제1 챔버(202)에 동심일 수 있는 채널(214)이 배치되며, 상기 채널(214)은 상기 제1 챔버의 상부 벽으로부터 상기 제1 챔버(202)의 측벽으로 하향 연장된다.
본 개시의 일부 구현예에서, 제1 가열 장치(302)는 내부 실린더와 외부 실린더 사이에 배치된 채널(214) 내에 위치될 수 있다. 비제한적인 예로서, 제1 가열 장치(302)는 내부 실린더와 외부 실린더 사이에 배치된 채널(214)과 실질적으로 동일한 직경을 갖는 중공 실린더를 포함할 수 있다. 따라서, 가열 장치(302)는 내부 실린더(제1 챔버(202)) 및 외부 실린더(제2 챔버(204)) 모두에 가열을 제공하도록 내부 실린더와 외부 실린더 사이의 채널(214)에 삽입될 수 있다. 비제한적인 예로서, 제1 가열 장치(302)는 채널(214) 내 삽입되도록 구성될 수 있는 벨트 히터를 포함할 수 있다.
본 개시의 일부 구현예에서, 제2 가열 장치(304)는 화학물질 디스펜싱 장치(200)에 온도 제어를 더 제공하기 위해 활용될 수 있다. 제2 가열 장치(304)는 중공 실린더를 포함할 수 있으며, 화학물질 디스펜싱 장치(200)의 외부 실린더의 외부 표면 주위에 배치될 수 있다. 예를 들어, 비제한적인 예로서, 제2 가열 장치(304)는 화학물질 디스펜싱 장치(200)의 외부 실린더 주위에 배치되는, 즉 감싸고 인접할 수 있는 추가적인 벨트 히터를 포함할 수 있다.
본 개시의 일부 구현예에서, 제1 가열 장치(302) 및 제2 가열 장치(304)는 온도 구배, 즉 소스 화학물질의 최대 온도와 소스 화학물질의 최소 온도 사이의 차이 온도가 2℃ 미만 또는 1℃ 미만, 또는 심지어 0.5℃ 미만의 온도 내에서 조절될 수 있도록 독립적으로 제어될 수 있다. 소스 화학물질의 온도 구배는 소스 화학물질, 즉 제1 챔버(202) 내에 유지되는 소스 화학물질 및 제2 챔버(204) 내에 유지되는 소스 화학물질 모두의 완전 체적의 온도 구배를 지칭할 수 있음에 유의해야한다. 본 개시의 대안적인 구현예에서, 소스 화학물질의 온도 구배는 제1 챔버 (202)내에 유지되는 소스 화학물질의 온도 구배만을 참조할 수 있다.
따라서 본 개시의 구현예는 연장 기간 동안 안정한 기상 반응물의 흐름을 제공할 수 있는 대량의 화학물질 디스펜싱 장치를 포함할 수 있다. 예를 들어, 일부 구현예에서, 화학물질 디스펜싱 장치는 1 리터 초과, 또는 2 리터 초과, 또는 심지어 4 리터 초과의 소스 화학물질의 총 체적을 유지할 수 있다. 본 개시의 일부 구현예에서, 화학물질 디스펜싱 장치는 200 시간 초과, 또는 300 시간 초과, 또는 심지어 400 시간 초과의 시간 동안 반응 챔버에 기상 반응물을 연속적으로 디스펜싱할 수 있다. 본 개시의 일부 구현예에서, 본 개시의 화학물질 디스펜싱 장치는 안정화 시간 즉, 화학물질 디스펜싱 장치 내의 증기압이 정상 상태 값에 도달하는 시간이 감소됨을 설명할 수 있다. 예를 들어, 일부 구현예에서, 화학물질 디스펜싱 장치 내의 소스 화학물질의 증기압은 500 초 미만의 시간, 또는 300 초 미만의 시간, 또는 100 초 미만의 시간 후에 안정 상태 값에 도달할 수 있다.
본 개시의 구현예는 또한 기상 반응물을 반응 챔버에 디스펜싱하는 방법을 포함할 수 있다. 본 개시의 방법은 반응 챔버에 기상 반응물을 디스펜싱하는 방법(400)에 대한 공정 흐름을 도시하는 도 4를 참조하여 더 상세할 수 있다. 보다 상세하게, 방법(400)은 소스 화학물질을 제1 충진레벨까지 유지하기 위한 제1 챔버를 제공하는 단계를 포함하는 공정 블록(410)을 포함할 수 있다. 제1 챔버는 화학물질 앰퓰의 일부를 포함할 수 있고 예를 들어, 석영 재료및 스테인리스 강과 같은 내식성 재료로 제조될 수 있다. 상기 소스 화학물질은 고체(실온에서) 또는 증기를 포함할 수 있으며, 상기 소스 화학물질이 제1 챔버를 제1 충진레벨까지 채울 수 있도록 충진 공정을 활용하여 제1 챔버에 도입될 수 있으며, 상기 제1 충진레벨은 제1 챔버 내의 상기 소스 화학물질의 최상부 노출 표면의 레벨을 지칭할 수 있다.
상기 방법(400)은 제1 챔버와 유체 연통하는 제2 챔버를 제공하는 단계를 포함하는 공정 블록(420)으로 계속될 수 있다. 역시 제2 챔버도 화학물질 앰퓰의 일부를 포함할 수 있고 예를 들어, 석영 재료 및 스테인리스 강과 같은 내식성 재료로 제조될 수 있다. 제1 챔버와 제2 챔버 사이에 유체 연통을 제공하기 위한 유체 채널이 상기 제1 챔버와 상기 제2 챔버 사이에 배치될 수 있다. 본 개시의 일부 구현예에서, 제2 챔버는 소스 화학물질로 제2 충진레벨까지 채워질 수 있으며 여기서, 제2 충진레벨은 제2 챔버 내부의 소스 화학물질의 최상 노출 표면의 레벨을 지칭할 수 있다. 제1 챔버와 제2 챔버가 유체 연통하고 있기 때문에, 제1 챔버 또는 제2 챔버 중 어느 하나를 소스 화학물질로 충진하는 공정은, 두 개의 챔버 사이의 유체 채널이 제1 챔버 및 제2 챔버의 베이스에 배치되기만 하면 두 개의 챔버 모두를 채우게 될 것이다. 역시 제1 챔버와 제2 챔버가 유체 연통하고 있기 때문에, 제1 충진레벨과 제2 충진레벨은 평형 상태 하에서 실질적으로 동일하다.
상기 방법(400)은 캐리어 가스를 제1 챔버 내로 흐르게 하여 기상 반응물을 생성시키는 단계를 포함하는 공정 블록(430)으로 계속될 수 있다. 보다 상세하게 제1 챔버는 또한 캐리어 가스 공급 라인과 유체 연통하는 유입구 개구를 포함할 수 있다. 하나 이상의 캐리어 가스(예, 질소 또는 아르곤)는 캐리어 가스 공급 라인을 통해 제1 챔버에 도입될 수 있고, 소스 화학물질의 증기를 캐리어 가스에 동반시키게 함으로써 기상 반응물을 생성시키도록 할 수 있다. 소스 화학물질 증기로부터 기상 반응물을 생성하는 결과는 제1 챔버 내에 유지된 소스 화학물질의 일부가 소비된다는 것이다. 제1 챔버 내에서 소스 화학물질의 소비로 인해 통상적으로 제1 챔버 내의 소스 화학물질의 제1 충진레벨의 레벨 감소가 될 것이나, 본원에 기재된 바와 같이 본 개시의 방법은 제1 챔버 내 제1 충진레벨의 감소를 상쇄한다.
상기 방법(400)은 상기 기상 반응물을 제1 챔버로부터 디스펜싱하는 단계를 포함하는 공정 블록(440)으로 계속될 수 있다. 보다 상세하게, 상기 기상 반응물은 제1 챔버와 유체 연통하는 가스 유출구 라인을 통해 제1 챔버 외부로 운반될 수 있다. 기상 반응물의 제1 챔버 외부로의 운반, 즉 화학물질 디스펜싱 장치 외부로의 운반은 제1 챔버 내 및 외부로의 캐리어의 흐름을 통해 달성될 수 있다. 본 개시의 일부 구현예에서, 제1 챔버로부터의 가스 유출구 라인은 반도체 공정 처리 장치의 반응 챔버에 유체 연통할 수 있어서, 상기 기상 반응물은 반도체 제조 공정에 활용될 수 있다.
상기 방법(400)은 제2 챔버 내에 유지된 소스 화학물질 위의 압력을 제어하는 단계를 포함하는 공정 블록(450)으로 계속될 수 있다. 보다 상세하게, 제2 챔버에 유지된 소스 화학물질 위의 압력은 압력 조절 유닛 및 가압 가스를 제2 챔버 내로 흐르게 하도록 구성된 가압 가스 라인에 의해 제어될 수 있다. 가압 가스는 제2 챔버 내의 소스 화학물질의 제2 충진레벨 위에 축적될 수 있고, 또한 제2 챔버에 유지된 소스 화학물질 상에 하향 압력을 인가할 수 있다. 제1 챔버와 제2 챔버가 서로 유체 연통한다는 사실 때문에, 상기 하향 압력으로 인해 제2 충진레벨이 감소할 수 있으며, 이로 인해 제1 챔버의 제1 충진레벨 증가가 차례로 일어날 수 있다. 따라서, 제2 챔버 내에 유지되는 소스 화학물질 위의 압력을 제어하는 단계는 제1 챔버의 제1 충진레벨을 직접 제어한다. 본 개시의 일부 구현예에서, 제2 챔버에 담긴 소스 화학물질 위의 압력은 압력 제어 유닛, 가압 가스 라인 및 가압 가스 라인 상에 배치된 밸브를 통해 제어될 수 있다. 또한, 제2 챔버 내에 담긴 소스 화학물질 위의 압력 제어는 제2 챔버로부터 가압 가스의 일부를 방출시키는 데 활용될 수있는 가스 유출구 라인을 통해 제어될 수 있다. 따라서 일부 구현예에서, 상기 방법은 가압 가스의 적어도 일부를 제2 챔버 유출구 개구를 통해 제2 챔버로부터 방출하는 단계를 포함할 수 있다.
상기 방법(400)은 제1 충진레벨을 실질적으로 일정한 레벨로 조절하는 단계를 포함하는 공정 블록(460)으로 계속될 수 있다. 보다 상세하게, 제2 챔버 내 소스 화학물질 위의 압력은 제1 챔버의 제1 충진레벨을 직접 조절하도록 제어될 수 있다. 따라서, 소스 화학물질이 기상 반응물의 형성을 통해 제1 챔버에서 소비되기 때문에, 제2 챔버 내의 소스 화학물질 위의 압력은 제1 충진레벨을 실질적으로 일정한 레벨로 조절하도록 증가될 수 있다. 제1 충진레벨을 실질적으로 일정한 레벨로 조절하는 것을 더 가능하게 하기 위해, 하나 이상의 액체 레벨 센서는 화학물질 디스펜싱 장치 내의 액체 레벨을 모니터링하고 가압 가스 라인과 관련된 압력 제어 유닛에 대한 제어 신호를 제공하도록 활용될 수 있다. 따라서, 본 개시의 일부 구현예에서, 제1 충진레벨을 실질적으로 일정한 레벨로 조절하는 단계는 액체 센서를 활용하여 제1 챔버 내 제1 충진레벨을 모니터링하는 단계를 더 포함한다. 액체 센서는 제1 충진레벨의 레벨 감소를 모니터링하고, 제2 챔버 내의 소스 화학물질에 대한 압력을 증가시킴으로써 제1 충진레벨의 레벨의 임의의 변화를 상쇄하도록 압력 제어 유닛에 제어 신호를 제공할 수 있다. 본 개시의 일부 구현예에서, 추가적인 액체 레벨 센서는 제2 챔버 내에 배치될 수 있고, 제2 충진레벨을 모니터닝하기 위해 소스 화학물질과 접촉할 수 있다.
추가적으로, 또는 대안으로, 본 개시의 방법은 제1 챔버 또는 제2 챔버 중 어느 하나에 추가적인 소스 화학물질을 공급함으로써 실질적으로 일정한 레벨로 제1 충진레벨을 조절하는 단계를 포함할 수 있다. 예를 들어, 하나 이상의 추가 유입구 공급 라인이 제1 챔버 및 제2 챔버와 결합될 수 있고, 유입구 공급 라인(들)은 소스 화학물질이 소비됨에 따라 화학물질 디스펜싱 장치 내로 추가의 소스 화학물질을 도입하는데 활용될 수 있다.
위에 설명된 본 개시의 예시적 구현예는 본 발명의 구현예의 예시일 뿐이기 때문에 이들 구현예는 첨부된 청구범위 및 그의 법적 등가물에 의해 정의되는 본 발명의 범주를 제한하지 않는다. 임의의 등가적인 구현예는 본 발명의 범주 내에 있도록 의도된다. 확실하게, 본원에 도시되고 기재된 것 외에도, 기재된 요소들의 선택적인 유용한 조합과 같은 본 발명의 다양한 변경은 설명으로부터 당업자에게 분명할 수 있다. 이러한 변경 및 구현예도 첨부된 청구범위의 범주 내에 있는 것으로 의도된다.
Claims (24)
- 기상 반응물을 반응 챔버에 디스펜싱하는 장치로서,
소스 화학물질을 제1 충진레벨로 유지하도록 구성된 제1 챔버;
상기 소스 화학물질을 제2 충진레벨로 유지하도록 구성되고, 상기 제1 충진레벨 및 상기 제2 충진레벨 아래의 유체 채널을 통해 상기 제1 챔버와 유체 연통하는 제2 챔버;
상기 제1 챔버 내로 캐리어 가스를 흐르게 하여 상기 소스 화학물질의 증기가 상기 캐리어 가스에 혼입되어 기상 반응물을 생성하도록 구성된 캐리어 가스 공급 라인과 유체 연통하는 제1 챔버 유입구 개구;
상기 기상 반응물을 상기 제1 챔버로부터 디스펜싱하도록 구성되며 가스 유출구 라인과 유체 연통하는 제1 챔버 유출구 개구; 및
상기 제2 챔버 내 가압 가스의 흐름을 제어하여 상기 제1 챔버 내 상기 제1 충진레벨을 제어하도록 구성된 유량 제어기를 구비한 가압 가스 공급 라인과 유체 연통하는 제2 챔버 유입구 개구를 포함하고,
상기 제2 챔버로부터 상기 가압 가스의 적어도 일부를 방출하도록 구성된 가스 유출구 라인과 유체 연통하는 제2 챔버 유출구 개구를 더 포함하는, 장치. - 제1항에 있어서, 상기 캐리어 가스 공급 라인은 캐리어를 상기 제1 챔버 내 상기 제1 충진레벨 위로 흐르게 하도록 구성되는 장치.
- 삭제
- 제1항에 있어서, 상기 가압 가스의 흐름을 제어하도록 상기 가압 가스 공급 라인의 상기 유량 제어기에 작동 가능하게 연결되는 제어 유닛을 더 포함하는 장치.
- 제4항에 있어서, 상기 제1 챔버 내 상기 제1 충진레벨을 측정하기 위하여 상기 제어 유닛에 작동 가능하게 연결되는 액체 레벨 센서를 더 포함하고, 상기 제어 유닛은 측정된 제1 충진레벨에 기반하여, 상기 유량 제어기를 통해 상기 제2 챔버 내로 유입되는 상기 가압 가스의 흐름을 제어하여 상기 제1 충진레벨을 실질적으로 일정 레벨로 조절하도록 프로그래밍되는 장치.
- 제1항에 있어서, 상기 소스 화학물질과 접촉하며 상기 제2 챔버 내 배치되는 추가의 액체 레벨 센서를 더 포함하는 장치.
- 제1항에 있어서, 추가의 소스 화학물질을 상기 제2 챔버 내로 흐르게 하도록 구성된 증기 공급 라인과 유체 연통하는 추가의 제2 챔버 유입구 개구를 더 포함하는 장치.
- 제1항에 있어서, 상기 제1 챔버는 내부 실린더를 포함하고, 상기 제2 챔버는 상기 내부 실린더와 동심으로 배치되며 상기 내부 실린더를 둘러싸는 부분적으로 중공인 외부 실린더를 포함하는 장치.
- 기상 반응물을 반응 챔버에 디스펜싱하는 장치로서,
소스 화학물질을 제1 충진레벨로 유지하도록 구성된 제1 챔버;
상기 소스 화학물질을 제2 충진레벨로 유지하도록 구성되고, 상기 제1 충진레벨 및 상기 제2 충진레벨 아래의 유체 채널을 통해 상기 제1 챔버와 유체 연통하는 제2 챔버;
상기 제1 챔버 내로 캐리어 가스를 흐르게 하여 상기 소스 화학물질의 증기가 상기 캐리어 가스에 혼입되어 기상 반응물을 생성하도록 구성된 캐리어 가스 공급 라인과 유체 연통하는 제1 챔버 유입구 개구;
상기 기상 반응물을 상기 제1 챔버로부터 디스펜싱하도록 구성되며 가스 유출구 라인과 유체 연통하는 제1 챔버 유출구 개구;
상기 제2 챔버 내 가압 가스의 흐름을 제어하여 상기 제1 챔버 내 상기 제1 충진레벨을 제어하도록 구성된 유량 제어기를 구비한 가압 가스 공급 라인과 유체 연통하는 제2 챔버 유입구 개구; 및,
내부 실린더와 외부 실린더 사이에 배치되는 가열 장치를 포함하며,
상기 제1 챔버는 내부 실린더를 포함하고, 상기 제2 챔버는 상기 내부 실린더와 동심으로 배치되며 상기 내부 실린더를 둘러싸는 부분적으로 중공인 외부 실린더를 포함하고, 장치. - 제1항에 있어서, 상기 제1 챔버 주위에 배치되는 가열 장치를 더 포함하는 장치.
- 제1항에 있어서, 상기 제2 챔버 주위에 배치되는 가열 장치를 더 포함하는 장치.
- 제1항에 있어서, 상기 제1 챔버 및 제2 챔버 내 유지되는 소스 화학물질의 전체 체적이 4 리터를 초과하는 장치.
- 제1항에 있어서, 상기 소스 화학물질의 전체 체적을 가로지르는 온도 구배가 1°C 미만인 장치.
- 기상 반응물을 반응 챔버에 디스펜싱하는 방법으로서,
소스 화학물질을 제1 충진레벨로 유지하도록 구성된 제1 챔버를 제공하는 단계;
상기 소스 화학물질을 제2 충진레벨로 유지하고 상기 제1 충진레벨 및 상기 제2 충진레벨 아래의 유체 채널을 통해 상기 제1 챔버와 유체 연통하도록 구성된 제2 챔버를 제공하는 단계;
캐리어 가스를 제1 챔버 유입구 개구를 통해 상기 제1 챔버 내로 흐르게 하는 단계(상기 캐리어 가스를 제1 챔버 내로 흐르게 하는 단계는 상기 소스 화학물질의 증기가 상기 캐리어 가스에 혼입되어 기상 반응물을 생성하도록 함);
유출구 가스 라인과 유체 연통하는 제1 챔버 유출구 개구를 통해 상기 기상 반응물을 상기 제1 챔버로부터 디스펜싱하는 단계; 및
제2 챔버 유입구 개구를 통해 상기 제2 챔버 내로 유입되는 가압 가스의 흐름을 제어하여 상기 제1 충진레벨을 실질적으로 일정한 레벨로 조절하는 단계를 포함하며,
상기 가압 가스의 적어도 일부를 제2 챔버 유출구 개구를 통해 상기 제2 챔버로부터 방출하는 단계를 더 포함하는, 방법. - 삭제
- 제14항에 있어서, 상기 제2 챔버 내로 유입되는 상기 가압 가스의 흐름을 제어하는 단계는 압력 제어 유닛을 활용하여 상기 제2 챔버 내 상기 소스 화학물질 위의 압력을 제어하는 단계를 더 포함하는 방법.
- 제14항에 있어서, 상기 제1 충진레벨을 실질적으로 일정한 레벨로 조절하는 단계는 액체 레벨 센서를 활용하여 상기 제1 챔버 내 상기 제1 충진레벨을 모니터링하는 단계를 더 포함하는 방법.
- 제14항에 있어서, 추가의 액체 레벨 센서를 활용하여 상기 제2 챔버 내 상기 제2 충진레벨을 모니터링하는 단계를 더 포함하는 방법.
- 제14항에 있어서, 상기 제1 충진레벨을 실질적으로 일정한 레벨로 유지하는 단계는 추가의 소스 화학물질을 상기 제1 챔버 또는 상기 제2 챔버에 공급하는 단계를 더 포함하는 방법.
- 제14항에 있어서, 상기 제1 챔버는 내부 실린더를 포함하고, 상기 제2 챔버는 상기 내부 실린더와 동심으로 배치되며 상기 내부 실린더를 둘러싸는 부분적으로 중공인 외부 실린더를 포함하되, 상기 내부 실린더와 상기 외부 실린더 사이에 채널이 배치되는 방법.
- 기상 반응물을 반응 챔버에 디스펜싱하는 방법으로서,
소스 화학물질을 제1 충진레벨로 유지하도록 구성된 제1 챔버를 제공하는 단계;
상기 소스 화학물질을 제2 충진레벨로 유지하고 상기 제1 충진레벨 및 상기 제2 충진레벨 아래의 유체 채널을 통해 상기 제1 챔버와 유체 연통하도록 구성된 제2 챔버를 제공하는 단계;
캐리어 가스를 제1 챔버 유입구 개구를 통해 상기 제1 챔버 내로 흐르게 하는 단계 - 상기 캐리어 가스를 제1 챔버 내로 흐르게 하는 단계는 상기 소스 화학물질의 증기가 상기 캐리어 가스에 혼입되어 기상 반응물을 생성하도록 함 -;
유출구 가스 라인과 유체 연통하는 제1 챔버 유출구 개구를 통해 상기 기상 반응물을 상기 제1 챔버로부터 디스펜싱하는 단계;
제2 챔버 유입구 개구를 통해 상기 제2 챔버 내로 유입되는 가압 가스의 흐름을 제어하여 상기 제1 충진레벨을 실질적으로 일정한 레벨로 조절하는 단계; 및
내부 실린더와 외부 실린더 사이에 배치되는 상기 채널 내에 가열 장치를 제공하는 단계를 포함하며,
상기 제1 챔버는 내부 실린더를 포함하고, 상기 제2 챔버는 상기 내부 실린더와 동심으로 배치되며 상기 내부 실린더를 둘러싸는 부분적으로 중공인 외부 실린더를 포함하되, 상기 내부 실린더와 상기 외부 실린더 사이에 채널이 배치되는, 방법. - 제20항에 있어서, 상기 외부 실린더의 외부 표면 주위에 가열 장치를 제공하는 단계를 더 포함하는 방법.
- 제14항에 있어서, 1°C 미만의 온도 구배를 갖고 80°C 초과의 온도로 상기 소스 화학물질을 가열하는 단계를 더 포함하는 방법.
- 삭제
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CN109545708B (zh) | 2024-04-05 |
CN109545708A (zh) | 2019-03-29 |
KR20190034104A (ko) | 2019-04-01 |
US20190093221A1 (en) | 2019-03-28 |
TWI801420B (zh) | 2023-05-11 |
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TW201933509A (zh) | 2019-08-16 |
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