TWI683922B - 氣相化合物原位形成之方法和系統 - Google Patents

氣相化合物原位形成之方法和系統 Download PDF

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TWI683922B
TWI683922B TW104122889A TW104122889A TWI683922B TW I683922 B TWI683922 B TW I683922B TW 104122889 A TW104122889 A TW 104122889A TW 104122889 A TW104122889 A TW 104122889A TW I683922 B TWI683922 B TW I683922B
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約翰 托勒
艾瑞克 希爾
傑瑞德 李 威克勒
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荷蘭商Ａｓｍ智慧財產控股公司
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Abstract

本發明揭示一種用於向反應腔室提供中間活性物質之系統及方法。該系統包括流體耦接至該反應腔室之中間活性物質形成腔室以向該反應腔室提供中間活性物質。可使用壓力控制器件控制該中間活性物質形成腔室之操作壓力，且可使用加熱器將中間活性物質形成腔室加熱至所要溫度。

Description

氣相化合物原位形成之方法和系統
本發明大體上係關於氣相反應器及系統。更特定言之，本發明係關於能夠原位形成可在下游反應器中用作前驅物或反應物之氣相化合物的氣相系統及方法。
氣相製程用於多種應用，諸如將材料沈積於基板上之化學氣相沈積製程、自基板或反應器移除材料之氣相蝕刻製程、清潔基板或反應器之氣相清潔製程及處理基板或反應器之表面的氣相處理製程。氣相製程之前驅物通常根據欲沈積、蝕刻、清潔或處理之材料選擇；亦即前驅物通常選用於提供所要氣相反應物。然而，通常使用其他因素在超過一種可適用於特定應用之前驅物之間進行選擇。舉例而言，前驅物之活性或選擇性可為前驅物選擇中之因素。選擇前驅物之另一考慮因素為前驅物之穩定性，例如，前驅物是否在該前驅物有機會參與所要反應前分解為其他化合物。其他考慮因素可包括前驅物之蒸氣壓、前驅物之毒性、前驅物之可用性及前驅物之成本。因此，可具有所要特性(諸如較高選擇性、活性及/或提供較均勻沈積、蝕刻或處理)之前驅物可能不選用於特定應用，因為該前驅物相對昂貴，具有不當蒸氣壓及/或有毒。
可使用遠端或直流電漿系統自前驅物產生經活化或供能之 物質，其中對於既定反應器溫度，經供能物質比前驅物更具活性。遠端電漿系統通常在反應腔室上游形成電漿，且直流電漿系統通常在反應腔室內形成電漿，其中基板通常處於電漿中或與電漿相鄰。對於一些應用，遠端電漿系統可能比直流電漿系統有利，因為遠端電漿系統不在基板表面上直接形成電漿。因此，使用遠端電漿可減少或去除對基板之表面破壞，否則該表面破壞可能在直流電漿反應器中發生。然而，來自多種前驅物之遠端電漿活性物質有效期相對短且在活性物質進入反應腔室或到達基板之所要區域(例如基板表面上所形成之溝槽的底部及/或基板之外周)前重組或與其他組分反應。使用直流電漿使得活性物質可在反應腔室內形成，但活性物質可仍在到達基板之所要區域之前重組或以其他方式變得不活化。
因此，需要用於相對接近基板形成活性物質而不會引起非所需基板破壞之改良方法及系統，其中活性物質可相對穩定。
本發明之各種具體實例提供自一或多種前驅物形成中間活性物質(在本文中亦稱為化合物)之改良方法及系統。中間活性物質可適用於各種氣相製程，諸如化學氣相沈積製程(包括電漿增強化學氣相沈積製程)、氣相蝕刻製程(包括電漿增強氣相蝕刻製程)、氣相清潔(包括電漿增強清潔製程)及氣相處理製程(包括電漿增強氣相處理製程)。
可使用例示性方法及系統在反應腔室附近形成中間活性物質，其中例如中間活性物質可視為所要反應物但不當(例如有毒或不穩定)前驅物來源。可使用方法及系統向反應器之反應腔室提供所要化學物質(諸 如特定反應物)之穩態來源。可使用反應腔室遠端之電漿系統促進所要中間活性物質之形成。
根據本發明之各種具體實例，氣相反應器系統包括包含反應 腔室之反應器；流體耦接至反應腔室之中間活性物質形成腔室；流體耦接至中間活性物質形成腔室之第一氣體源；及插在中間活性物質形成腔室與反應腔室之間的壓力控制器件。可使用壓力控制器件控制中間活性物質形成腔室之操作壓力。反應器可為例如化學氣相沈積反應器、原子層沈積反應器、蝕刻反應器、清潔反應器或處理反應器，其中任一者可包括直接或遠端電漿裝置。根據此等具體實例之各種態樣，該系統進一步包括耦接至壓力控制器件以維持中間活性物質形成腔室之所要操作壓力的控制器。根據其他態樣，系統包括一或多個流量控制單元(例如質量流量控制器)以控制一或多種氣體流向中間活性物質形成腔室之流速。例示性系統亦可包括加熱器以將一或多種氣體及/或中間活性物質形成腔室加熱至所要溫度，例如約50℃至約200℃之溫度。根據其他態樣，壓力控制器件為閉環壓力控制器，其控制壓力控制器件上游之氣體壓力。且，根據其他態樣，系統進一步在中間活性物質形成腔室與反應器之間包含整合式入口歧管區塊。中間活性物質形成腔室可包括催化劑以促進所要中間活性物質之形成。
根據本發明之其他例示性具體實例，形成用於反應器之反應 腔室之中間活性物質的方法包括如下步驟：向中間活性物質形成腔室中提供第一氣體，控制中間活性物質形成腔室內之壓力及在中間活性物質形成腔室內形成中間活性物質。根據此等具體實例之例示性方法可用於將材料沈積於基板表面上，蝕刻基板表面上之材料，清潔基板表面，處理基板表 面，將材料沈積於反應腔室之表面上，蝕刻反應腔室之表面，處理反應腔室之表面及/或清潔反應腔室之表面。根據此等具體實例之各種態樣，方法另外包括向中間活性物質形成腔室中提供第二氣體。根據其他態樣，控制中間活性物質形成腔室之壓力的步驟包含使用閉環上游壓力控制器。根據其他態樣，方法包括在遠端電漿單元中形成電漿之步驟，該遠端電漿單元可選自由感應耦合電漿單元及微波單元組成之群。根據其他態樣，方法包括控制中間活性物質形成腔室與反應腔室之間的閥。根據其他態樣，方法包括加熱中間活性物質形成腔室至所要溫度(例如約50℃至約200℃之溫度)的步驟。
根據本發明之其他具體實例，電漿增強反應器系統(諸如電 漿增強化學氣相沈積反應器)包括包含反應腔室之反應器；流體耦接至反應腔室之中間活性物質形成腔室；流體耦接至中間活性物質形成腔室之遠端電漿單元；耦接至中間活性物質形成腔室之第一氣體源；及與中間活性物質形成腔室及反應腔室流體連通且插在中間活性物質形成腔室與反應腔室之間的壓力控制器件。壓力控制器件控制中間活性物質形成腔室之操作壓力。根據此等具體實例之各種態樣，該系統進一步包括耦接至壓力控制器件以維持中間活性物質形成腔室之所要操作壓力的控制器。根據其他態樣，系統包括一或多個流量控制單元以控制一或多種氣體流向遠端電漿單元及/或中間活性物質形成腔室之流速。根據其他態樣，壓力控制器件為閉環壓力控制器，其控制壓力控制器件上游之氣體壓力。且，根據其他態樣，系統進一步在遠端中間活性物質形成腔室與反應器之間包含整合式入口歧管區塊。根據此等具體實例之其他態樣，中間活性物質形成腔室包括催化 劑，例如以促進所要中間物質之形成。且，根據其他態樣，系統包括加熱器，例如以將中間活性物質形成腔室加熱至約50℃至約200℃之溫度。
以上概述與以下實施方式均僅為例示性的及解釋性的，且不限制本發明或所主張之發明。
100‧‧‧氣相反應器系統
102‧‧‧反應器
104‧‧‧反應腔室
106‧‧‧基板固持器
108‧‧‧氣體分配系統
110‧‧‧遠端電漿單元
112‧‧‧真空源
114‧‧‧第一反應物氣體源
116‧‧‧第二反應物氣體源
118‧‧‧其他反應物氣體源
120‧‧‧吹掃氣體源
122‧‧‧吹掃氣體源
124‧‧‧吹掃氣體源
126‧‧‧流量控制單元
127‧‧‧吹掃氣體管線
128‧‧‧流量控制單元
129‧‧‧吹掃氣體管線
130‧‧‧流量控制單元
131‧‧‧源氣體管線
132‧‧‧流量控制單元
133‧‧‧吹掃氣體管線
134‧‧‧流量控制單元
135‧‧‧源氣體管線
136‧‧‧流量控制單元
137‧‧‧源氣體管線
140‧‧‧壓力控制器件
142‧‧‧控制器
144‧‧‧整合式入口歧管區塊
146‧‧‧基板
148‧‧‧中間活性物質形成腔室
150‧‧‧加熱器
152‧‧‧壓力感測器
154‧‧‧入口
156‧‧‧第一區
158‧‧‧下游區段
在結合以下說明性圖式考慮時，藉由參考實施方式及申請專利範圍可獲得對本發明之例示性具體實例的較完整瞭解。
圖1說明根據本發明之例示性具體實例的氣相反應器系統。
應瞭解，在圖式中為簡單起見及明確性而說明元件且其未必按比例繪製。舉例而言，圖中一些元件之尺寸可相對於其他元件放大以輔助改良對所說明之本發明具體實例的瞭解。
下文所提供之例示性具體實例之描述僅為例示性的且僅欲用於說明目的；以下描述不欲限制本發明或申請專利範圍之範疇。此外，具有所陳述特徵之多個具體實例的技述並不欲排除具有其他特徵之其他具體實例或併有所陳述特徵之不同組合的其他具體實例。
例示性方法及系統包括使用中間活性物質形成腔室來形成中間活性物質。中間活性物質可用於下游反應腔室中之後續反應，諸如沈積、蝕刻、清潔及/或處理反應。
圖1說明根據本發明之例示性具體實例的氣相反應器系統100。系統100包括反應器102，其包括反應腔室104、基板固持器106、氣體分配系統108；中間活性物質形成腔室148；遠端電漿單元110；真空來 源112；第一反應物氣體源114；第二反應物氣體源116；一或多個其他反應物氣體源118；淨化氣體源120、122、124；一或多個流量控制單元126-136；壓力控制器件140及耦接至壓力控制器件140之控制器142。系統100亦可包括加熱器150及/或整合式入口歧管區塊144。儘管未說明，但系統100可另外包括對一或多種反應物之熱激發。
可使用反應器102將材料沈積於基板146之表面上，自基板146之表面蝕刻材料，清潔基板146之表面，處理基板146之表面，於反應腔室104內之表面上沈積材料，清潔反應腔室104內之表面，蝕刻反應腔室104內之表面及/或處理反應腔室104內之表面。反應器102可為獨立反應器或群集工具之一部分。此外，反應器102可專用於如本文所述之沈積、蝕刻、清潔或處理製程，或反應器102可用於多個製程，例如沈積、蝕刻、清潔及處理製程之任何組合。舉例而言，反應器102可包括典型地用於化學氣相沈積(諸如電漿增強化學氣相沈積(PECVD)及/或電漿增強原子層沈積(PEALD))加工之反應器。
基板固持器106經設計以在加工期間將基板或工件146固持在適當位置。根據各種例示性具體實例，反應器102包括直流電漿裝置；在此情形下基板固持器106可形成直流電漿電路之一部分。另外或替代地，基板固持器106可在加工期間加熱、冷卻或處於環境製程溫度下。舉例而言，基板固持器106可在基板146加工期間加熱以使得反應器102以冷壁熱基板組態操作。
儘管氣體分配系統108以塊形式說明，但氣體分配系統108可相對複雜且經設計以混合來自反應物源114、116、118、中間物質形成腔 室148之氣體(例如蒸氣)及/或來自一或多個來源120、122、124之運載/吹掃氣體，隨後向反應腔室104中分配該氣體混合物。此外，系統108可經組態以向腔室104中提供垂直(如所說明)或水平氣體流。例示性氣體分配系統描述於Schmidt等人之2012年4月10日頒佈之名為「Gas Mixer and Manifold Assembly for ALD Reactor」的美國專利第8,152,922號中，其內容特此以引用的方式在該等內容不與本發明矛盾之程度上併入本文中。舉例而言，分配系統108包括蓮蓬頭氣體分配系統。
遠端電漿單元110為能夠形成電漿之遠端電漿器件。作為特定實施例，遠端電漿單元110可為感應耦合電漿單元或微波遠端電漿單元。 在所說明之實施例中，可使用遠端電漿單元110產生活性或激發物質以用於中間活性物質形成腔室148及/或反應器102。儘管所說明之系統100具有遠端電漿單元110，根據本發明之其他例示性具體實例的系統不包括遠端電漿單元。除使用遠端電漿單元110形成激發物質以外或作為其替代方案，系統100可包括另一激發源，諸如熱絲源、微波發射源或其類似來源。
真空源112可包括能夠在反應腔室104中提供所要壓力之任何適合真空源。真空源112可僅包括例如乾式真空泵，或其與渦輪分子泵之組合。
反應物氣體源或前驅物114、116及118可各包括一或多種氣體或變成氣體之物質，其用於沈積、蝕刻、清潔或處理製程中。例示性氣體源包括三氟化氮(NF3)、氨(NH3)、水蒸氣(H2O)、過氧化氫(H2O2)、MMH(單甲基肼)、UDMH(不對稱二甲基肼)、O2/H2、N2/H2及H2S。儘管經說明而具有三個反應物氣體源114-118，根據本發明之系統可包括任何適 合數目之反應物源。
如上所述，可使用系統100自來自氣體源(諸如氣體源114-118中之一或多者)之一或多種前驅物形成中間活性物質。因為系統100可形成中間活性物質，故前驅物(例如來自氣體源114-118)可具有相對適宜之前驅物品質，例如相對安全、廉價等，而中間活性物質可具有更適宜之反應物品質，例如相對活性且在基板之表面上及/或反應腔室內提供相對均勻之沈積或蝕刻特徵。由氨形成之例示性中間活性物質包括例如氟化銨、肼(N2H4)、相對不穩定之NH2及二氮烯(N2H2)。認為肼與二氮烯均有毒且其不應典型地用於氣相沈積製程中。然而，肼與二氮烯在使用氣相沈積加工形成氮化物材料時均具有優良特性。本發明使得可安全、容易地形成此等中間活性物質。類似地，使用本文所述之系統可形成來自H2O之OH-中間活性物質。其他中間活性物質包括H2O2(過氧化物)、HO2、NH、NH4F(例如來自經由遠端電漿單元110引入之經激發NF3物質/Ar及引入(例如經加熱)中間活性物質形成腔室148之NH3)、N2H及HS(例如來自H2S)、三矽膦(trisilophosphine)及其經激發物質。術語「活化(activate)」與「激發(excite)」在本文中可互換使用。
在反應器蝕刻、處理或清潔之情形下，可使用所形成之中間反應物蝕刻、處理或清潔反應器部件，諸如前線，否則其可能不能用不太穩定之反應物清潔、處理或蝕刻。
吹掃氣體源120-124包括一或多種在反應器102中相對不起反應的氣體或變為氣體之物質。例示性吹掃氣體包括氮氣、氬氣、氦氣及其任何組合。儘管經說明而具有三個吹掃氣體源，但根據本發明之系統可 包括任何適合數目之吹掃氣體源。此外，一或多個吹掃氣體源可提供一或多種運載氣體，及/或系統100可包括其他運載氣體源以提供與一或多種來自反應物源之氣體混合之運載氣體。
流量控制器126-136可包括用於控制氣流之任何適合器件。舉例而言，流量控制器124-132可為質量流量控制器。
中間活性物質形成腔室148使得可形成所要中間活性物質，其可隨後例如以穩態方式引入反應腔室104中。中間活性物質形成腔室148內之壓力可使用壓力控制器件140控制。系統100亦可包括壓力感測器152來量測中間活性物質形成腔室148內之壓力。在所說明之實施例中，壓力控制器件及壓力感測器152偶合於控制器142以控制(例如閉環控制)中間活性物質形成腔室148內之壓力。壓力控制器件140可包括控制上游壓力之任何適合器件。舉例而言，壓力控制器件140為活性(例如閉環)壓力控制器，諸如MKS型號640A壓力控制器。或者，壓力控制器件可包括節流閥。系統100可經組態以使用壓力控制器件140或其他適合閥自中間活性物質形成腔室148向反應腔室104以脈衝方式輸送中間活性物質。
中間活性物質形成腔室148內之壓力可與反應腔室104內之壓力獨立地控制。中間活性物質形成腔室148內之壓力可根據應用變化。舉例而言，中間活性物質形成腔室148中之壓力可在約10毫托(milliTorr)至約10托(Torr)範圍內。
可使用加熱器150加熱中間活性物質形成腔室148至所要溫度。加熱器150可經組態以獨立地控制中間活性物質形成腔室148之溫度，例如與反應腔室104內之溫度獨立。例示性系統可控制中間活性物質形成 腔室148內之溫度與壓力。加熱器150可為(例如電阻式)夾套加熱器、內置式加熱器、輻射加熱器或其類似物。根據本發明之所說明實施例，加熱器150經組態以加熱中間活性物質形成腔室148至約50℃至約200℃、或約75℃至約175℃、或約100℃至約150℃之溫度。儘管未說明，但可加熱一或多個源氣體管線(例如管線131、135、137)及/或一或多個吹掃氣體管線(例如管線127、129、133)以促進中間活性物質形成腔室148及/或反應腔室104內獲得及/或保持所要溫度。
如所說明，中間活性物質形成腔室148包括入口154。入口154可包括第一區156，其具有相對於下游區段158較大之截面開口。此外，入口154可為錐形，例如截頭錐形以提供成角度之壁。成角度之壁可促使中間活性物質形成腔室148內之反應物進行適宜混合。可在入口154或入口154附近向中間活性物質形成腔室148引入一或多種反應物以使得反應物再次混合且反應而在中間活性物質形成腔室148內形成所要化合物/物質。
中間活性物質形成腔室148可由多種材料形成，諸如不鏽鋼或Hastelloy®合金。中間活性物質形成腔室148亦可在中間活性物質形成腔室148內包括催化劑(例如塗佈於表面上或作為填充床)。可使用催化劑促進一或多種所要中間活性物質之形成。舉例而言，在使用氨製備肼之情形下，催化劑可包括鐵、氧化錳(MgO)或氧化鈦(TiO2)。其他適合催化材料包括貴金屬，諸如鉑、鈀及銠。另外或替代地，中間活性物質形成腔室148可包括襯墊，諸如石英襯墊。
視情況選用之整合式入口歧管區塊140經設計以接受一或多種氣體且向反應腔室104分配一或多種氣體。例示性整合式入口歧管區 塊140揭示於Provencher等人之2011年4月5日頒佈之名為「High Temperature ALD Inlet Manifold」的美國專利第7,918,938號中，其內容特此以引用的方式在該等內容不與本發明矛盾之程度上併入本文中。
儘管本文中闡述本發明之例示性具體實例，但應瞭解本發明並非限於此。舉例而言，儘管結合各種特定組態描述方法及反應器系統，但本發明未必限於此等實施例。可在不脫離本發明之精神及範疇的情況下對本文中所闡述之例示性系統及方法進行各種修改、變化及改進。
本發明之標的物包括各種系統、組件及組態之所有新穎且非顯而易見的組合及子組合及本文中所揭示之其他特徵、功能、作用及/或特性，以及其任何及所有等效物。
100‧‧‧氣相反應器系統
102‧‧‧反應器
104‧‧‧反應腔室
106‧‧‧基板固持器
108‧‧‧氣體分配系統
110‧‧‧遠端電漿單元
112‧‧‧真空源
114‧‧‧第一反應物氣體源
116‧‧‧第二反應物氣體源
118‧‧‧其他反應物氣體源
120‧‧‧吹掃氣體源
122‧‧‧吹掃氣體源
124‧‧‧吹掃氣體源
126‧‧‧流量控制單元
127‧‧‧吹掃氣體管線
128‧‧‧流量控制單元
129‧‧‧吹掃氣體管線
130‧‧‧流量控制單元
131‧‧‧源氣體管線
132‧‧‧流量控制單元
133‧‧‧吹掃氣體管線
134‧‧‧流量控制單元
135‧‧‧源氣體管線
136‧‧‧流量控制單元
137‧‧‧源氣體管線
140‧‧‧壓力控制器件
142‧‧‧控制器
144‧‧‧整合式入口歧管區塊
146‧‧‧基板
148‧‧‧中間活性物質形成腔室
150‧‧‧加熱器
152‧‧‧壓力感測器
154‧‧‧入口
156‧‧‧第一區
158‧‧‧下游區段

Claims (20)

  1. 一種氣相反應器系統，其包含：反應器，其包含反應腔室；中間活性物質形成腔室，其流體耦接至該反應腔室，該中間活性物質形成腔室包含錐形入口，以促進反應物混合；流體耦接至該中間活性物質形成腔室之該錐形入口之第一氣體源及一或多個第二氣體源及激發源，其中該第一氣體源包含中間活性物質之前驅物；及與該中間活性物質形成腔室流體連通且插在該中間活性物質形成腔室與該反應腔室之間的壓力控制器件，其中該壓力控制器件控制該中間活性物質形成腔室之操作壓力。
  2. 如申請專利範圍第1項之氣相反應器系統，其進一步包含耦接至該中間活性物質形成腔室之遠端電漿單元。
  3. 如申請專利範圍第1項之氣相反應器系統，其進一步包含耦接至該壓力控制器件以控制該中間活性物質形成腔室內之壓力的控制器。
  4. 如申請專利範圍第1項之氣相反應器系統，其進一步包含耦接至該第一氣體源之流量控制單元。
  5. 如申請專利範圍第1項至第4項中任一項之氣相反應器系統，其中該反應器選自由以下組成之群：化學氣相沈積反應器、原子層沈積反應器、蝕刻反應器、清潔反應器及處理反應器。
  6. 如申請專利範圍第1項至第4項中任一項之氣相反應器系統，其中該壓力控制器件為閉環壓力控制器件。
  7. 如申請專利範圍第1項至第4項中任一項之氣相反應器系統，其進一步包含整合式入口歧管區塊。
  8. 如申請專利範圍第1項至第4項中任一項之氣相反應器系統，其中該中間活性物質形成腔室包含催化劑。
  9. 如申請專利範圍第1項至第4項中任一項之氣相反應器系統，其進一步包含能夠加熱該中間活性物質形成腔室至約50℃至約200℃之溫度的加熱器。
  10. 如申請專利範圍第1項至第4項中任一項之氣相反應器系統，其中該第一氣體源包含NH3、NF3、H2O、H2O2、MMH(單甲基肼)、UDMH(不對稱二甲基肼)、O2/H2、N2/H2及H2S中之一或多者。
  11. 一種形成用於反應器系統之反應腔室之中間活性物質的方法，該方法包含以下步驟：向中間活性物質形成腔室中提供來自第一氣體源之第一氣體，其中該中間活性物質形成腔室包含錐形入口，以促進反應物混合，且其中該第一氣體源及一或多個第二氣體源及激發源係流體耦接至該錐形入口；控制該中間活性物質形成腔室內之壓力；及在該中間活性物質形成腔室內形成中間活性物質。
  12. 如申請專利範圍第11項之形成用於反應器系統之反應腔室之中間活性物質的方法，其進一步包含提供與該中間活性物質形成腔室之錐形入口流體連通之遠端電漿單元。
  13. 如申請專利範圍第12項之形成用於反應器系統之反應腔室之中間活性 物質的方法，其進一步包含以下步驟：向該遠端電漿單元中提供來自該第二氣體源之第二氣體；及向該中間活性物質形成腔室中提供經激發物質。
  14. 如申請專利範圍第12項之形成用於反應器系統之反應腔室之中間活性物質的方法，其中提供遠端電漿單元之步驟包含提供選自由感應耦合電漿單元及微波單元組成之群的電漿單元。
  15. 如申請專利範圍第11項至第12項中任一項之形成用於反應器系統之反應腔室之中間活性物質的方法，其中控制該中間活性物質形成腔室內之壓力的步驟包含使用閉環壓力控制器。
  16. 如申請專利範圍第11項至第12項中任一項之形成用於反應器系統之反應腔室之中間活性物質的方法，其中形成中間活性物質之步驟包含控制該中間活性物質形成腔室與該反應腔室之間的閥。
  17. 如申請專利範圍第11項至第12項中任一項之形成用於反應器系統之反應腔室之中間活性物質的方法，其進一步包含一或多個選自由以下組成之群的步驟：將材料沈積於基板之表面上，蝕刻基板表面上之材料，清潔基板表面，處理基板表面，將材料沈積於該反應腔室之表面上，自該反應腔室之表面蝕刻材料，處理該反應腔室之表面，及清潔該反應腔室之表面。
  18. 一種氣相反應器系統，其包含：反應器，其包含反應腔室；中間活性物質形成腔室，其流體耦接至該反應腔室； 流體耦接至該中間活性物質形成腔室之錐形入口之第一反應物源及一或多個第二氣體源及激發源，其中該第一反應物源為中間活性物質之前驅物；與該中間活性物質形成腔室及該反應腔室流體連通且插在該中間活性物質形成腔室與該反應腔室之間的壓力控制器件，其中該壓力控制器件控制該中間活性物質形成腔室之操作壓力；及加熱該中間活性物質形成腔室至約50℃至約200℃之溫度的加熱器。
  19. 如申請專利範圍第18項之氣相反應器系統，其進一步包含耦接至該壓力控制器件之控制器。
  20. 如申請專利範圍第18項至第19項中任一項之氣相反應器系統，其中該中間活性物質形成腔室包含催化劑。
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