KR20160023563A - 기상 화합물의 인시츄 형성을 위한 방법 및 시스템 - Google Patents
기상 화합물의 인시츄 형성을 위한 방법 및 시스템 Download PDFInfo
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Abstract
중간 반응성 종을 반응 챔버에 제공하기 위한 시스템 및 방법이 개시된다. 그 시스템은 중간 반응성 종을 반응 챔버에 제공하기 위하여 반응 챔버에 유체적으로 연결된 중간 반응성 종 형성 챔버를 포함한다. 압력 제어 디바이스가, 중간 반응성 종 형성 챔버의 동작 압력을 제어하는데 사용되고, 가열기가 중간 반응성 종 형성 챔버를 원하는 온도로 가열하는데 사용될 수 있다.
Description
본 개시는 일반적으로 기상 (gas-phase) 반응기 및 시스템에 관한 것이다. 보다 상세하게는, 본 개시는 다운스트림 반응기에서 전구체 또는 반응물로서 사용될 수 있는 기상 화합물의 인시츄 (in situ) 형성이 가능한 기상 시스템 및 방법에 관한 것이다.
기상 프로세스들은, 재료를 기판 상에 성막하기 위한 화학 기상 증착 프로세스들, 기판 또는 반응기로부터 재료를 제거하기 위한 기상 식각 프로세스들, 기판 또는 반응기를 세정하기 위한 기상 세정 프로세스들, 및 기판 또는 반응기의 표면을 처리하기 위한 기상 처리 프로세스들과 같은 다양한 응용들에 사용된다. 기상 프로세스들을 위한 전구체들은 일반적으로, 성막될, 식각될, 세정될 또는 처리될 재료에 따라 선택된다; 즉, 전구체들은 일반적으로 바람직한 기상 반응물들을 제공하기 위해 선택된다. 하지만, 특정 응용에 적합할 수도 있는 하나 보다 많은 전구체 사이에서 선택하기 위해 다른 인자들이 종종 사용된다. 예를 들어, 전구체의 반응성 또는 선택성은 전구체의 선택에 있어서 인자가 될 수도 있다. 전구체 선택을 위한 또 다른 고려 사항은 전구체의 안정성 - 예를 들어, 전구체가 원하는 반응에 참여할 기회를 갖기 전에 다른 화합물들로 분해하는 가이다. 또 다른 고려 사항들은 전구체의 증기압, 전구체의 독성, 전구체의 이용가능성, 및 전구체의 비용을 포함할 수도 있다. 따라서, 바람직한 특성들, 이를테면, 더 높은 선택성, 반응성을 갖거나 및/또는 보다 균일한 성막, 식각, 또는 처리를 제공할 수도 있는 전구체는 특정 용도를 위해 선택되지 않을 수도 있는데, 왜냐하면 그 전구체는 상대적으로 비싸거나, 바람직하지 않은 증기압을 갖거나, 및/또는 독성이 있기 때문이다.
원격 또는 직접 플라즈마 시스템들은 전구체로부터 활성화 또는 고에너지화 (energized) 종을 생성하는데 사용될 수도 있고, 여기서 고에너지화 종은 주어진 반응기 온도에 대해 전구체보다 더 반응적이다. 원격 플라즈마 시스템들은 일반적으로 반응 챔버의 업스트림 플라즈마를 형성하고, 직접 플라즈마 시스템들은 일반적으로 반응 챔버 내의 플라즈마를 형성하고, 여기서 기판은 종종 플라즈마 내에 있거나 또는 인접해 있다. 원격 플라즈마 시스템들은 일부 응용들에 대해 직접 플라즈마 시스템들에 비해 유리할 수도 있는데, 왜냐하면 원격 플라즈마 시스템들은 기판의 표면 위에 직접 플라즈마를 형성하지 않기 때문이다. 결과적으로, 그렇지 않으면 직접 플라즈마 반응기에서 발생할 수도 있는 기판에 대한 표면 손상이 원격 플라즈마를 사용하여 감소되거나 또는 제거될 수 있다. 하지만, 많은 전구체들로부터의 원격 플라즈마 활성화된 종들은 상대적으로 수명이 짧고, 활성화된 종이 반응 챔버에 진입하거나 또는 기판의 원하는 영역 (예를 들어, 기판의 외주 및/또는 기판의 표면에 형성된 트렌치의 하부) 에 도달하기 전에 다른 성분들과 재결합 또는 반응한다. 직접 플라즈마를 사용하는 것은 활성화된 종이 반응 챔버 내에서 형성되는 것을 허용하지만, 그 활성화된 종은 기판 상의 원하는 영역들에 도달하기 전에 여전히 재결합 또는 그렇지 않으면 비활성화될 수도 있다.
따라서, 원하지 않은 기판 손상을 일으킴이 없이 기판에 상대적으로 가깝게 반응성 종을 형성하기 위한 향상된 방법 및 시스템으로서, 반응성 종이 상대적으로 안정할 수 있는, 그러한 향상된 방법 및 시스템이 요망된다.
개시의 요약
본 개시의 다양한 실시형태들은 하나 이상의 전구체들로부터 중간 반응성 종 (여기에서 화합물으로도 지칭된다) 을 형성하기 위한 향상된 방법 및 시스템을 제공한다. 중간 반응성 종은, 화학 기상 증착 프로세스 (플라즈마 강화 화학 기상 증착 프로세스 포함), 기상 식각 프로세스 (플라즈마 강화 기상 식각 프로세스 포함), 기상 세정 (플라즈마 강화 세정 프로세스 포함), 및 기상 처리 프로세스 (플라즈마 강화 기상 처리 프로세스 포함) 와 같은 다양한 기상 프로세스들에서의 사용에 적합할 수 있다.
예시적인 방법 및 시스템은, 예를 들어, 중간 반응성 종이 바람직한 반응물이지만 바람직하지 않은 (예를 들어, 독성 또는 불안정한) 전구체 소스로 고려될 수도 있는 경우, 반응 챔버 근처에 중간 반응성 종을 형성하는데 사용될 수 있다. 그 방법 및 시스템은, 반응기의 반응 챔버에 특정 반응물들과 같은 바람직한 화학 종의 정상 상태 소스 (steady-state source) 를 제공하는데 사용될 수 있다. 반응 챔버로부터 원격인 플라즈마 시스템이 바람직한 중간 반응성 종의 형성을 촉진하는데 사용될 수 있다.
본 개시의 다양한 실시형태들에 따르면, 기상 반응기 시스템은, 반응 챔버를 포함하는 반응기, 반응 챔버에 유체적으로 연결된 중간 반응성 종 형성 챔버, 중간 반응성 종 형성 챔버에 유체적으로 연결된 제 1 가스 소스, 및 중간 반응성 종 형성 챔버와 반응 챔버 사이에 개재된 압력 제어 디바이스를 포함한다. 압력 제어 디바이스는 중간 반응성 종 형성 챔버의 동작 압력을 제어하는데 사용될 수 있다. 반응기는, 예를 들어, 화학 기상 증착 반응기, 원자 층 증착 반응기, 식각 반응기, 세정 반응기, 또는 처리 반응기일 수도 있고, 이들 중의 어느 것은 직접 또는 원격 플라즈마 장치를 포함할 수 있다. 이들 실시형태들의 다양한 양태들에 따르면, 시스템은 중간 반응성 종 형성 챔버의 원하는 동작 압력을 유지하기 위하여 압력 제어 디바이스에 연결된 제어기를 더 포함한다. 다른 양태들에 따르면, 시스템은 중간 반응성 종 형성 챔버로의 하나 이상의 가스들의 유량을 제어하기 위한 하나 이상의 흐름 제어 유닛 (예를 들어, 질량 유량 제어기) 을 포함한다. 예시적인 시스템들은 또한, 하나 이상의 가스들 및/또는 중간 반응성 종 형성 챔버를 원하는 온도로 - 예를 들어, 약 50 ℃ 내지 약 200 ℃ 의 온도로 가열하기 위한 가열기를 포함할 수 있다. 다른 양태들에 따르면, 압력 제어 디바이스는, 압력 제어 디바이스의 업스트림 가스 압력을 제어하는 폐 루프 (closed-loop) 압력 제어기이다. 그리고, 또한 추가의 양태들에 따르면, 시스템은 중간 반응성 종 형성 챔버와 반응기 사이에 통합된 유입구 매니폴드 블록을 더 포함한다. 중간 반응성 종 형성 챔버는 원하는 중간 반응성 종의 형성을 촉진하기 위한 촉매를 포함할 수 있다.
본 발명의 추가 예시적인 실시형태들에 따르면, 반응기의 반응 챔버에서의 사용을 위한 중간 반응성 종을 형성하는 방법은 중간 반응성 종 형성 챔버에 제 1 가스를 제공하는 단계, 중간 반응성 종 형성 챔버 내의 압력을 제어하는 단계, 및 중간 반응성 종 형성 챔버 내에서 중간 반응성 종을 형성하는 단계를 포함한다. 이들 실시형태들에 따른 예시적인 방법들은 기판의 표면 상에 재료를 성막하는 데, 기판의 표면 상의 재료를 식각하는 데, 기판의 표면을 세정하는 데, 기판의 표면을 처리하는 데, 반응 챔버의 표면 상에 재료를 성막하는 데, 반응 챔버의 표면을 식각하는 데, 반응 챔버의 표면을 처리하는 데 및/또는 반응 챔버의 표면을 세정하는 데 사용될 수 있다. 이들 실시형태들의 다양한 양태들에 따르면, 그 방법은 추가적으로, 중간 반응성 종 형성 챔버에 제 2 가스를 제공하는 단계를 포함한다. 다른 양태들에 따르면, 중간 반응성 종 형성 챔버의 압력을 제어하는 단계는 폐 루프 업스트림 압력 제어기를 사용하는 것을 포함한다. 다른 양태들에 따르면, 그 방법은, 유도 결합 플라즈마 유닛 및 마이크로파 유닛으로 이루어지는 군으로부터 선택될 수 있는 원격 플라즈마 유닛에서 플라즈마를 형성하는 단계를 포함한다. 또 다른 양태들에 따르면, 방법은 중간 반응성 종 형성 챔버와 반응 챔버 사이의 밸브를 제어하는 단계를 포함한다. 추가 양태들에 따르면, 방법은 중간 반응성 종 형성 챔버를 원하는 온도로 - 예를 들어, 약 50 ℃ 내지 약 200 ℃ 의 온도로 가열하는 단계를 포함한다.
본 발명의 또 추가의 실시양태들에 따르면, 플라즈마 강화 반응기 시스템, 이를테면 플라즈마 강화 화학 기상 증착 반응기 (예를 들어, 플라즈마 강화 원자 층 증착 반응기) 시스템, 플라즈마 강화 식각 반응기 시스템, 플라즈마 강화 세정 반응기 시스템, 또는 플라즈마 강화 처리 반응기 시스템은, 반응 챔버, 반응 챔버에 유체적으로 연결된 중간 반응성 종 형성 챔버, 중간 반응성 종 형성 챔버에 유체적으로 연결된 원격 플라즈마 유닛, 중간 반응성 종 형성 챔버에 연결된 제 1 가스 소스, 및 중간 반응성 종 형성 챔버와 반응 챔버 사이에 개재되고 유체 연통 (fluid communication) 하는 압력 제어 디바이스를 구비하는 반응기를 포함한다. 압력 제어 디바이스는 중간 반응성 종 형성 챔버의 동작 압력을 제어한다. 이들 실시형태들의 다양한 양태들에 따르면, 시스템은 중간 반응성 종 형성 챔버의 원하는 동작 압력을 유지하기 위하여 압력 제어 디바이스에 연결된 제어기를 더 포함한다. 다른 양태들에 따르면, 시스템은 중간 반응성 종 형성 챔버 및/또는 원격 플라즈마 유닛에 대한 하나 이상의 가스들의 유량을 제어하기 위한 하나 이상의 흐름 제어 유닛을 포함한다. 다른 양태들에 따르면, 압력 제어 디바이스는, 압력 제어 디바이스의 업스트림 가스 압력을 제어하는 폐 루프 (closed-loop) 압력 제어기이다. 그리고, 또한 추가의 양태들에 따르면, 시스템은 원격 중간 반응성 종 형성 챔버와 반응기 사이에 통합된 유입구 매니폴드 블록을 더 포함한다. 이들 실시형태들의 또 추가의 양태들에 따르면, 중간 반응성 종 형성 챔버는 - 예를 들어, 원하는 중간 종의 형성을 촉진하기 위한 - 촉매를 포함한다. 그리고 추가 양태들에 따르면, 시스템은 - 예를 들어, 중간 반응성 종 형성 챔버를 약 50 ℃ 내지 약 200 ℃ 의 온도로 가열하기 위한- 가열기를 포함한다.
이전의 요약 및 다음의 상세한 설명은 오직 예시적이며 설명을 위한 것이고 본 개시 또는 청구된 발명을 한정하지 않는다.
본 개시의 예시적인 실시형태들의 보다 완전한 이해는, 다음의 예시적인 도면과 관련하여 고려될 때 상세한 설명 및 청구항들을 참조함으로써 도출될 수 있다.
도 1은 본 개시의 예시적인 실시형태들에 따른 기상 반응기 시스템을 도시한다.
도면에 있는 엘리먼트들은 간결성 및 명료성을 위해 예시되었고 반드시 스케일 (scale) 대로 그려진 것은 아니라는 것이 인식될 것이다. 예를 들면, 도면에 있는 엘리먼트들의 일부의 치수들은 본 개시의 예시된 실시형태들의 이해를 향상시키는 것을 돕기 위해 다른 엘리먼트들에 비해 과장될 수도 있다.
도 1은 본 개시의 예시적인 실시형태들에 따른 기상 반응기 시스템을 도시한다.
도면에 있는 엘리먼트들은 간결성 및 명료성을 위해 예시되었고 반드시 스케일 (scale) 대로 그려진 것은 아니라는 것이 인식될 것이다. 예를 들면, 도면에 있는 엘리먼트들의 일부의 치수들은 본 개시의 예시된 실시형태들의 이해를 향상시키는 것을 돕기 위해 다른 엘리먼트들에 비해 과장될 수도 있다.
아래에 제공된 예시적인 실시형태들의 설명은 단지 예시적이고 예시의 목적으로만 의도되고; 다음의 설명은 본 개시 또는 청구항의 범위를 제한하도록 의도되지 않는다. 또한, 언급된 피쳐 (feature) 들을 갖는 다수의 실시형태들의 기재는 추가 피쳐들을 갖는 다른 실시형태들 또는 언급된 피쳐들의 상이한 조합들을 포함하는 다른 실시형태들을 배제하도록 의도되지 않는다.
예시적인 방법 및 시스템은 중간 반응성 종을 형성하기 위한 중간 반응성 종 형성 챔버의 이용을 포함한다. 중간 반응성 종은 다운스트림 반응기 챔버에서의 성막, 식각, 세정 및/또는 처리 반응들과 같은, 후속 반응들에서 사용될 수 있다.
도 1은 본 개시의 예시적인 실시형태들에 따른 기상 반응기 시스템 (100) 을 도시한다. 시스템 (100) 은, 반응 챔버 (104), 기판 홀더 (106), 가스 분배 시스템 (108), 중간 반응성 종 형성 챔버 (148), 원격 플라즈마 유닛 (110), 진공 소스 (112), 제 1 반응물 가스 소스 (114), 제 2 반응물 가스 소스 (116), 하나 이상의 추가 반응물 가스 소스(들) (118), 퍼지 가스 소스들 (120, 122, 124), 하나 이상의 흐름 제어 유닛들 (126-136), 압력 제어 디바이스 (140), 및 압력 제어 디바이스 (140) 에 연결된 제어기 (142) 를 구비한, 반응기 (102) 를 포함한다. 시스템 (100) 은 또한, 가열기 (150) 및/또는 통합된 유입구 매니폴드 블록 (144) 을 포함할 수 있다. 비록 도시되지는 않았지만, 시스템 (100) 은 하나 이상의 반응물들을 위한 열적 여기부 (thermal excitation) 를 추가적으로 구비할 수도 있다.
반응기 (102) 는 기판 (146) 의 표면 상에 재료를 성막하기 위해, 기판 (146) 의 표면으로부터 재료를 식각하기 위해, 기판 (146) 의 표면을 세정하기 위해, 기판 (146) 의 표면을 처리하기 위해, 반응 챔버 (104) 내의 표면 상에 재료를 성막하기 위해, 반응 챔버 (104) 내의 표면을 세정하기 위해, 반응 챔버 (104) 내의 표면을 식각하기 위하여 및/또는 반응 챔버 (104) 내의 표면을 처리하기 위하여 사용될 수도 있다. 반응기 (102) 는 독립형 (standalone) 반응기이거나 또는 클러스터 툴의 부분일 수 있다. 또한, 반응기 (102) 는 여기에 기재된 바처럼 성막, 식각, 세정 또는 처리 프로세스 전용일 수 있거나, 또는 반응기 (102) 는 다수의 프로세스들에 - 예를 들어, 성막, 식각, 세정 및 처리 프로세스들의 임의의 조합에 - 사용될 수도 있다. 예로써, 반응기 (102) 는, 플라즈마 강화 화학 기상 증착 (PECVD) 및/또는 플라즈마 강화 원자 층 증착 (PEALD) 프로세싱과 같은 화학 기상 증착에 통상적으로 사용되는 반응기를 포함할 수도 있다.
기판 홀더 (106) 는 프로세싱 동안 기판 또는 워크피스 (146) 를 제자리에 유지하도록 설계된다. 다수의 예시적 실시형태들에 따르면, 반응기 (102) 는 직접 플라즈마 장치를 포함한다 ; 이 경우 기판 홀더 (106) 는 직접 플라즈마 회로의 부분을 형성할 수 있다. 추가적으로 또는 대안적으로, 기판 홀더 (106) 는 프로세싱 동안 가열되거나, 냉각되거나 또는 주위 프로세스 온도에 있을 수도 있다. 예로써, 기판 홀더 (106) 는, 반응기 (102) 가 냉벽, 열 기판 구성 (cold-wall, hot-substrate configuration) 에서 동작하도록, 기판 (146) 프로세싱 동안 가열될 수 있다.
비록 가스 분배 시스템 (108) 이 블록 형태로 예시되었지만, 가스 분배 시스템 (108) 은 상대적으로 복잡할 수도 있고, 가스 혼합물을 반응 챔버 (104) 에 분배하기 전에 반응물 소스들 (114, 116, 118) 중간 종 형성 챔버 (148) 로부터 가스 (예를 들어, 증기), 및/또는 하나 이상의 소스들 (120, 122, 124) 로부터의 캐리어/퍼지 가스들을 혼합하도록 설계될 수도 있다. 또한, 시스템 (108) 은 (예시된 바처럼) 수직 또는 수평 흐름의 가스들을 챔버 (104) 에 제공하도록 구성될 수도 있다. 예시적인 가스 분배 시스템은, 2012년 4월 10일자로 발행되었고 발명의 명칭이 "Gas Mixer and Manifold Assembly for ALD Reactor" 인 Schmidt 이외에 대한 미국 특허 번호 제8,152,922호에 기재되어 있고, 그의 내용은 이에 의해 참조로써 그 내용이 본 개시와 충돌하지 않는 범위로 여기에 원용된다. 예로써, 분배 시스템 (108) 은 샤워헤드 가스 분배 시스템을 포함한다.
원격 플라즈마 유닛 (110) 은, 플라즈마를 형성할 수 있는 원격 플라즈마 디바이스이다. 구체적인 예들로써, 원격 플라즈마 유닛 (110) 은 유도 결합 플라즈마 유닛 또는 마이크로파 원격 플라즈마 유닛일 수 있다. 예시된 예에서, 원격 플라즈마 유닛 (110) 은 중간 반응성 종 형성 챔버 (148) 및/또는 반응기 (102) 에서의 사용을 위해 반응성 종 또는 여기 종 (excited species) 을 생성하는데 사용될 수 있다. 비록 시스템 (100) 이 원격 플라즈마 유닛 (110) 과 함께 예시되었지만, 본 개시의 다른 예시적 실시형태들에 따른 시스템들은 원격 플라즈마 유닛을 포함하지 않는다. 여기 종을 형성하기 위하여 원격 플라즈마 유닛 (110) 을 이용하는 것에 추가하여 또는 대안으로서, 시스템 (100) 은 또 다른 여기 원, 이를테면 열적 또는 핫 필라멘트 소스, 마이크로파 소스 등을 포함할 수 있다.
진공 소스 (112) 는 반응 챔버 (104) 에서 원하는 압력을 제공할 수 있는 임의의 적합한 진공 소스를 포함할 수 있다. 진공 소스 (112) 는, 예를 들어, 건식 진공 펌프 (dry vacuum pump) 를 단독으로 또는 터보 분자 펌프와 조합하여 포함할 수도 있다.
반응물 가스 소스들 또는 전구체들 (114, 116, 및 118) 은 각각, 성막, 식각, 세정 또는 처리 프로세스들에서 사용되는, 하나 이상의 가스들, 또는 가스가 되는 재료들을 포함할 수 있다. 예시적인 가스 소스들은 삼불화질소 (NF3), 암모니아 (NH3), 수증기 (H2O), 과산화수소 (H2O2), MMH (모노 메틸 히드라진), UDMH (비대칭 디메틸 히드라진), O2/H2, N2/H2, 및 H2S 를 포함한다. 3개의 반응물 가스 소스들 (114-118) 과 함께 예시되었지만, 본 개시에 따른 시스템들은 임의의 적합한 수의 반응물 소스들을 포함할 수 있다.
위에 언급된 바처럼, 시스템 (100) 은, 가스 소스들 (114-118) 중의 하나 이상과 같은 가스 소스로부터의 하나 이상의 전구체들로부터 중간 반응성 종을 형성하는데 사용될 수 있다. 시스템 (100) 은 중간 반응성 종을 형성할 수 있기 때문에, (예를 들어, 가스 소스들 (114-118) 로부터의) 전구체들은 상대적으로 바람직한 전구체 품질들을 가질 수 있다 - 예를 들어, 상대적으로 안전하고, 저렴할 수 있는 등인 한편, 중간 반응성 종은 보다 바람직한 반응물 품질을 가질 수도 있다 - 예를 들어, 상대적으로 반응성이고 기판의 표면에 걸쳐 및/또는 반응 챔버 내의 상대적으로 고른 성막 또는 식각 특성들을 제공할 수도 있다. 암모니아로부터 형성되는 예시적인 중간 반응성 종은, 예를 들어, 불화 암모늄, 히드라진 (N2H4), 상대적으로 불안정한 NH2, 및 디아젠 (N2H2) 을 포함한다. 히드라진 및 디아젠 양자 모두는 독성이 있는 것으로 고려되고 기상 증착 프로세스에서 통상적으로 사용되지 않는다. 하지만, 히드라진 및 디아젠 양자 모두는 기상 증착 프로세싱을 사용하여 질화물 재료들을 형성할 때 탁월한 특성을 갖는다. 본 발명은, 이들 중간 반응성 종의 안전하고 용이한 형성을 허용한다. 유사하게, H2O 로부터의 OH- 중간 반응성 종은 여기에 기재된 시스템을 사용하여 형성될 수도 있다. 추가적인 중간 반응성 종은, H2O2 (과산화수소), HO2, NH, NH4F (예를 들어, 원격 플라즈마 유닛 (110) 을 통해 도입된 여기 NF3 종/Ar 및 (예를 들어, 가열된) 중간 반응성 종 형성 챔버 (148) 로 도입된 NH3 로부터), N2H, 및 HS (예를 들어, H2S 로부터), 트리실로포스핀, 및 이의 여기 종을 포함한다. 용어 "활성화" 및 "여기" 는 여기에서 상호교환가능하게 사용된다.
반응기 식각, 처리 또는 세정의 맥락에서, 형성되는 중간 반응물은, 그렇지 않으면 덜 안정한 반응물들로 세정, 처리 또는 식각되지 않을 수도 있는, 포어 라인 (fore line) 과 같은 반응기 부분들을 식각, 처리 또는 세정하는데 사용될 수 있다.
퍼지 가스 소스들 (120-124) 은, 반응기 (102) 에서 상대적으로 비반응성인, 하나 이상의 가스들, 또는 가스가 되는 재료들을 포함한다. 예시적인 퍼지 가스들은 질소, 아르곤, 헬륨, 및 이들의 임의의 조합을 포함한다. 3개의 퍼지 가스 소스들과 함께 예시되었지만, 본 개시에 따른 시스템은 임의의 적합한 수의 퍼지 가스 소스들을 포함할 수 있다. 또한 하나 이상의 퍼지 가스 소스들이 하나 이상의 캐리어 가스들을 제공할 수 있거나 및/또는 시스템 (100) 이 반응물 소스로부터의 하나 이상의 가스들과 혼합될 캐리어 가스를 제공하기 위한 추가적인 캐리어 가스 소스들을 포함할 수 있다.
흐름 제어기 (126-136) 는 가스 흐름을 제어하기 위한 임의의 적합한 디바이스를 포함할 수 있다. 예를 들어, 흐름 제어기 (124-132) 는 질량 유량 제어기일 수 있다.
중간 반응성 종 형성 챔버 (148) 는 원하는 중간 반응성 종의 형성을 허용하고, 이는 다음으로 - 예를 들어 정상 상태 방식으로 - 반응 챔버 (104) 내에 도입될 수 있다. 중간 반응성 종 형성 챔버 (148) 내의 압력은 압력 제어 디바이스 (140) 를 이용하여 제어될 수 있다. 시스템 (100) 은 또한, 중간 반응성 종 형성 챔버 (148) 내의 압력을 측정하기 위한 압력 센서 (152) 를 포함할 수 있다. 예시된 예에서, 압력 제어 디바이스 및 압력 센서 (152) 는 중간 반응성 종 형성 챔버 (148) 내의 압력을 제어 (예를 들어, 폐 루프 제어) 하기 위하여 제어기 (142) 에 연결된다. 압력 제어 디바이스 (140) 는 업스트림 압력을 제어하는 임의의 적합한 디바이스를 포함할 수 있다. 예로써, 압력 제어 디바이스 (140) 는 액티브 (예를 들어, 폐 루프) 압력 제어기, 이를테면 MKS 모델 640A 압력 제어기이다. 다르게는, 압력 제어 디바이스는 스로틀 밸브를 포함할 수 있다. 시스템 (100) 은 압력 제어 디바이스 (140) 또는 다른 적합한 밸브를 이용하여 중간 반응성 종 형성 챔버 (148) 로부터 반응 챔버 (104) 로 중간 반응성 종을 펄싱하도록 구성될 수 있다.
중간 반응성 종 형성 챔버 (148) 내의 압력은 반응 챔버 (104) 내의 압력에 관계 없이 제어될 수 있다. 중간 반응성 종 형성 챔버 (148) 내의 압력은 응용에 따라 달라질 수 있다. 예로써, 중간 반응성 종 형성 챔버 (148) 에서의 압력은 약 10 milliTorr 내지 약 10 Torr 의 범위일 수 있다.
가열기 (150) 는 중간 반응성 종 형성 챔버 (148) 를 원하는 온도로 가열하는데 사용될 수 있다. 가열기 (150) 는 - 반응 챔버 (104) 내의 온도에 관계 없이 - 중간 반응성 종 형성 챔버 (148) 의 온도를 독립적으로 제어하도록 구성될 수 있다. 예시적인 시스템들은 중간 반응성 종 형성 챔버 (148) 내의 온도 및 압력 양자 모두를 제어할 수 있다. 가열기 (150) 는 (예를 들어, 저항식) 재킷 가열기, 내장 가열기, 복사 가열기 등일 수 있다. 본 개시의 예시된 예들에 따르면, 가열기 (150) 는 중간 반응성 종 형성 챔버 (148) 를 약 50 ℃ 내지 약 200 ℃, 또는 약 75 ℃ 내지 약 175 ℃, 또는 약 100 ℃ 내지 약 150 ℃ 의 온도로 가열하도록 구성된다. 비록 도시되지는 않았지만, 하나 또는 소스 가스 라인들 (예를 들어, 라인들 (131, 135, 137)) 및/또는 하나 이상의 퍼지 가스 라인들 (예를 들어, 라인들 (127, 129, 133)) 이 중간 반응성 종 형성 챔버 (148) 및/또는 반응 챔버 (104) 내의 원하는 온도를 획득 및/또는 유지하는 것을 용이하게 하기 위하여 가열될 수 있다.
도시된 바처럼, 중간 반응성 종 형성 챔버 (148) 는 유입구 (154) 를 포함한다. 유입구 (154) 는, 다운스트림 섹션 (158) 에 상대적인 보다 큰 단면 개구를 갖는 제 1 영역 (156) 을 포함할 수 있다. 또한, 유입구 (154) 는 각진 벽 (angled wall) 들을 제공하기 위하여, 예를 들어, 절단 원뿔형 형상으로, 테이퍼링될 수 있다. 각진 벽들은 중간 반응성 종 형성 챔버 (148) 내의 반응물들의 바람직한 혼합을 증진시킬 수 있다. 하나 이상의 반응물들이 유입구 (154) 에서 또는 근처에서 중간 반응성 종 형성 챔버 (148) 로 도입되어 반응물들에게 혼합 및 반응하여 중간 반응성 종 형성 챔버 (148) 내에서 원하는 화합물/종을 형성하는 추가 시간을 줄 수 있다.
중간 반응성 종 형성 챔버 (148) 는 스테인레스 강 또는 Hastelloy® 합금과 같은 다양한 재료들로부터 형성될 수 있다. 중간 반응성 종 형성 챔버 (148) 는 또한, (표면에 코팅되거나 또는 패킹된 베드로서) 중간 반응성 종 형성 챔버 (148) 내의 촉매를 포함할 수 있다. 촉매는 하나 이상의 원하는 중간 반응성 종의 형성을 촉진하게 하는데 사용될 수 있다. 예를 들어, 암모니아가 히드라진을 제조하는데 사용되는 경우에, 촉매는 철, 망간 산화물 (MgO), 또는 티타늄 산화물 (TiO2) 을 포함할 수도 있다. 다른 적합한 촉매 재료들은, 백금, 팔라듐 및 로듐 등의 귀금속을 포함한다. 추가적으로 또는 대안적으로 중간 반응성 종 형성 챔버 (148) 는, 석영 라이너 (quartz liner) 와 같은 라이너를 포함할 수 있다.
선택적인 통합 유입구 매니폴드 블록 (140) 은 하나 이상의 가스들을 수신하고 반응 챔버 (104) 에 분배하도록 설계된다. 예시적인 통합 유입구 매니폴드 블록 (140) 은, 2011년 4월 5일자로 발행되었고 발명의 명칭이 "High Temperature ALD Inlet Manifold" 인 Provencher 이외에 대한 미국 특허 번호 제7,918,938호에 기재되어 있고, 그의 내용은 이에 의해 참조로써 그 내용이 본 개시와 충돌하지 않는 범위로 여기에 원용된다.
본 개시의 예시적인 실시형태들이 여기에 제시되었지만, 본 개시는 그에 한정되지 않는다는 것이 이해되야 한다. 예를 들면, 방법 및 반응기 시스템들이 다양한 특정 구성들과 관련하여 설명되지만, 본 개시는 이들 예들에 반드시 한정되는 것은 아니다. 여기에 제시된 예시적인 시스템들 및 방법들의 다양한 변경, 변형, 및 향상들이 본 개시의 사상 및 범위를 이탈함이 없이 이루어질 수도 있다.
본 개시의 요지는 다양한 시스템들, 컴포넌트들 및 구성들의 모든 신규하고 비자명한 조합들 및 하위 조합, 그리고 여기에 개시된 다른 특징들, 기능들, 행위들 및/또는 특성들, 그리고 그의 임의의 그리고 모든 균등물들을 포함한다.
Claims (20)
- 기상 반응기 시스템로서,
반응 챔버를 포함하는 반응기;
상기 반응 챔버에 유체적으로 연결된 중간 반응성 종 형성 챔버;
상기 중간 반응성 종 형성 챔버에 유체적으로 연결된 제 1 가스 소스로서, 상기 제 1 가스 소스는 중간 반응성 종을 위한 전구체를 포함하는, 상기 제 1 가스 소스; 및
상기 중간 반응성 종 형성 챔버와 상기 반응 챔버 사이에 개재되고 상기 중간 반응성 종 형성 챔버와 유체 연통하는 압력 제어 디바이스로서, 상기 압력 제어 디바이스는 상기 중간 반응성 종 형성 챔버의 동작 압력을 제어하는, 상기 압력 제어 디바이스
를 포함하는, 기상 반응기 시스템. - 제 1 항에 있어서,
상기 중간 반응성 종 형성 챔버에 연결된 원격 플라즈마 유닛을 더 포함하는, 기상 반응기 시스템. - 제 1 항에 있어서,
상기 중간 반응성 종 형성 챔버 내의 압력을 제어하기 위해 상기 압력 제어 디바이스에 연결된 제어기를 더 포함하는, 기상 반응기 시스템. - 제 1 항에 있어서,
상기 제 1 가스 소스에 연결된 흐름 제어 유닛을 더 포함하는, 기상 반응기 시스템. - 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,
상기 반응기는 화학 기상 증착 반응기, 원자 층 증착 반응기, 식각 반응기, 세정 반응기 및 처리 반응기로 이루어지는 군으로부터 선택되는, 기상 반응기 시스템. - 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,
상기 압력 제어 디바이스는 폐 루프 압력 제어 디바이스인, 기상 반응기 시스템. - 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,
통합된 유입구 매니폴드 블록을 더 포함하는, 기상 반응기 시스템. - 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,
상기 중간 반응성 종 형성 챔버는 촉매를 포함하는, 기상 반응기 시스템. - 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,
약 50 ℃ 과 약 200 ℃ 사이의 온도로 상기 중간 반응성 종 형성 챔버를 가열할 수 있는 가열기를 더 포함하는, 기상 반응기 시스템. - 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,
상기 제 1 가스 소스는 NH3, NF3, H2O, H2O2, 모노 메틸 히드라진 (MMH), 비대칭 디메틸 히드라진 (UDMH), O2/H2, N2/H2, 및 H2S 중의 하나 이상을 포함하는, 기상 반응기 시스템. - 반응기의 반응 챔버에서 사용하기 위한 중간 반응성 종의 형성 방법으로서,
중간 반응성 종 형성 챔버에 제 1 가스를 제공하는 단계;
상기 중간 반응성 종 형성 챔버 내의 압력을 제어하는 단계; 및
상기 중간 반응성 종 형성 챔버 내에 중간 반응성 종을 형성하는 단계
를 포함하는, 반응기의 반응 챔버에서 사용하기 위한 중간 반응성 종의 형성 방법. - 제 11 항에 있어서,
상기 중간 반응성 종 형성 챔버에 연결된 원격 플라즈마 유닛을 제공하는 단계를 더 포함하는, 반응기의 반응 챔버에서 사용하기 위한 중간 반응성 종의 형성 방법. - 제 12 항에 있어서,
상기 원격 플라즈마 유닛에 제 2 가스를 제공하는 단계; 및
상기 중간 반응성 종 형성 챔버에 여기 종을 제공하는 단계
를 더 포함하는, 반응기의 반응 챔버에서 사용하기 위한 중간 반응성 종의 형성 방법. - 제 12 항에 있어서,
상기 원격 플라즈마 유닛을 제공하는 단계는, 유도 결합 플라즈마 유닛 및 마이크로파 유닛으로 이루어지는 군으로부터 선택된 플라즈마 유닛을 제공하는 단계를 포함하는, 반응기의 반응 챔버에서 사용하기 위한 중간 반응성 종의 형성 방법. - 제 11 항 또는 제 12 항에 있어서,
상기 중간 반응성 종 형성 챔버 내의 압력을 제어하는 단계는 폐 루프 압력 제어기를 사용하는 단계를 포함하는, 반응기의 반응 챔버에서 사용하기 위한 중간 반응성 종의 형성 방법. - 제 11 항 또는 제 12 항에 있어서,
상기 중간 반응성 종을 형성하는 단계는 상기 중간 반응성 종 형성 챔버와 상기 반응 챔버 사이의 밸브를 제어하는 단계를 포함하는, 반응기의 반응 챔버에서 사용하기 위한 중간 반응성 종의 형성 방법. - 제 11 항 또는 제 12 항에 있어서,
기판의 표면 상에 재료를 성막하는 단계, 기판의 표면 상의 재료를 식각하는 단계, 기판의 표면을 세정하는 단계, 기판의 표면을 처리하는 단계, 상기 반응 챔버의 표면 상에 재료를 성막하는 단계, 상기 반응 챔버의 표면으로부터 재료를 식각하는 단계, 상기 반응 챔버의 표면을 처리하는 단계, 및 상기 반응 챔버의 표면을 세정하는 단계로 이루어지는 군으로부터 선택된 하나 이상의 단계들을 더 포함하는, 반응기의 반응 챔버에서 사용하기 위한 중간 반응성 종의 형성 방법. - 기상 반응기 시스템로서,
반응 챔버를 포함하는 반응기;
상기 반응 챔버에 유체적으로 연결된 중간 반응성 종 형성 챔버;
상기 중간 반응성 종 형성 챔버에 연결된 제 1 반응물 소스로서, 상기 제 1 반응물 소스는 중간 반응성 종을 위한 전구체인, 상기 제 1 반응물 소스;
상기 중간 반응성 종 형성 챔버와 상기 반응 챔버 사이에 개재되고 유체 연통하는 압력 제어 디바이스로서, 상기 압력 제어 디바이스는 상기 중간 반응성 종 형성 챔버의 동작 압력을 제어하는, 상기 압력 제어 디바이스; 및
약 50 ℃ 내지 약 200 ℃ 의 온도로 상기 중간 반응성 종 형성 챔버를 가열하기 위한 가열기
를 포함하는, 기상 반응기 시스템. - 제 18 항에 있어서,
상기 압력 제어 디바이스에 연결된 제어기를 더 포함하는, 기상 반응기 시스템. - 제 18 항 또는 제 19 항에 있어서,
상기 중간 반응성 종 형성 챔버는 촉매를 포함하는, 기상 반응기 시스템.
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- 2015-08-13 KR KR1020150114868A patent/KR102423113B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
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KR102423113B1 (ko) | 2022-07-19 |
US9890456B2 (en) | 2018-02-13 |
US20160051964A1 (en) | 2016-02-25 |
TWI683922B (zh) | 2020-02-01 |
TW201615883A (zh) | 2016-05-01 |
US10787741B2 (en) | 2020-09-29 |
US20180127876A1 (en) | 2018-05-10 |
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