TW202018121A - 藉由循環cvd形成保形碳化矽膜之方法 - Google Patents
藉由循環cvd形成保形碳化矽膜之方法 Download PDFInfo
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Abstract
一種在具有凹槽圖案之基板上形成碳化矽膜的方法,該碳化矽膜於633 nm處所量測之反射指數為2.3或更高,該方法包括(i)以脈衝形式向置放有該基板之反應空間中供應有機矽烷前驅物,該前驅物具有式RSiH3
,其中R為包括至少一個不飽和鍵之含烴部分;(ii)向該反應空間中連續供應電漿產生性氣體,該電漿產生性氣體選自由惰性氣體及氫化物氣體組成之群;(iii)向該反應空間連續施加RF功率以產生電漿,該電漿激發該前驅物;及(iv)重複步驟(i)至(iii),藉此在該基板上形成碳化矽膜,該碳化矽膜於633 nm處所量測之反射指數為2.3或更高。
Description
本發明大體上係關於一種形成保形碳化矽膜之方法,其藉由化學氣相沉積(CVD),尤其循環CVD來進行。
在用於例如製造積體電路層之半導體製造製程中,SiC膜常被使用,因為其優異特性,諸如對濕式蝕刻之高抗性。當將SiC膜沉積在具有凹槽圖案的經圖案化之基板上時,常需要膜之高保形性。為了沉積保形SiC膜,利用電漿或熱能之原子層沉積(ALD)可為候選沉積方法,此係因ALD已知為用於沉積保形膜之製程。然而,ALD之原理係基於前驅物分子在基板上之化學吸附,且因為用於沉積SiC膜之前驅物含有碳原子且已知碳為干擾分子之化學吸附的元素,故難以形成三維受控之SiC膜,其中在膜基體中常出現架構之僅部分形成。儘管SiC膜可藉由使用前驅物之熱分解的聚合反應來形成,但需要高溫,且因此該製程不能應用於需要低溫之製程,諸如使用光阻劑或其類似物之彼等製程。此外,儘管保形SiC膜可藉由組合沉積及蝕刻來形成,但觀測到負載效應,導致圖案化可控性之問題。因此,需要形成高度保形且均勻之SiC膜。
在本揭示案中,SiC膜不僅包括SiC膜,且視製程配方而定,亦包括SiCO膜、SiCN膜、SiCON膜或其類似物,其中該等膜名稱為縮寫,除非另外描述,否則僅以非化學計量方式指示膜類型。
關於相關技術之問題及解決方案的任何論述,僅出於提供本發明之背景脈絡而包括於本揭示案中,且不應被視為同意任何或全部該論述在進行本發明時為已知。
在一些具體例中,為了沉積保形SiC膜,使用弱自由基產生主聚合反應,藉此使得能夠將具有高保形性之SiC膜沉積在具有凹槽圖案之基板上,同時維持製程溫度較低。在一些具體例中,保形膜意指保形性為80%至100% (通常約90%或更高)之膜,其中「保形性」係藉由將在凹槽之側壁或底部上之某一點(通常為橫截面視圖中之中間點)處所沉積的膜厚度與在正好處於凹槽外之平坦表面上所沉積的膜厚度相比較來確定。
在一些具體例中,含矽之前驅物含有按其分子中所含有之每一個矽原子計,三個Si-H鍵及一個具有雙鍵或三鍵之烴基。在上文中,當前驅物在其分子中含有兩個或更多個矽原子時,根據其分子中矽原子之數目按比例,Si-H鍵之數目及烴基之數目變為兩倍或更多倍。因此,可沉積具有高反射指數(reflective index,RI)之SiC膜。
在一些具體例中,對於300 mm晶圓,聚合反應在0℃至500℃之溫度下且在10 W至500 W之RF功率下執行。在本揭示案中,對於300 mm晶圓所指示之任何RF功率可轉換成W/cm2
(每晶圓單位面積之瓦數),其可適用於具有不同直徑(諸如200 mm或450 mm)之晶圓。
在一些具體例中,在用於產生聚合之電漿氛圍中所需要的氣體為選自由惰性氣體及氫化物氣體組成之群的單一氣體或兩種或更多種氣體之混合物。氫化物氣體為供應氫之氣體,其通常不含矽或不含金屬元素(但可含有碳),此係因為氫化物氣體係用於回蝕膜以用於調整該膜之拓樸結構,而非用於沉積膜。
在一些具體例中,為了改良SiC膜之步階覆蓋率,除沉積步驟之外,使用利用氫化物氣體或含有氫化物氣體之氣體產生的電漿來進行電漿回蝕步驟。
出於概述本發明之各態樣及相對於相關技術所達成之優點的目的,在本揭示案中描述本發明之某些目的及優點。當然,應理解,無須根據本發明之任何特定具體例來實現所有此類目標或者優點。因此,舉例而言,熟悉本技藝者將認知到,可以達成或最佳化如本文中所教示之一個優點或一組優點而無須達成本文中可能教示或建議之其他目的或優點的方式來實踐或進行本發明。
本發明之其他態樣、特徵及優點將由隨後之詳細描述而變得顯而易見。
在本揭示案中,視上下文而定,「氣體」可包括汽化之固體及/或液體,且可由單一氣體或氣體混合物構成。同樣地,視上下文而定,冠詞「一(a/an)」意指一個物種或包括多個物種之種類。在本揭示案中,經由噴灑頭(showerhead)引入至反應室之製程氣體可以由含矽前驅物及添加氣體構成、實質上由其組成或由其組成。添加劑氣體可包括電漿產生性氣體(例如稀有氣體)及回蝕氣體(例如氫化物氣體),當向該添加劑氣體施加RF功率時,其得到激發或活化。惰性氣體可以運載氣體及/或稀釋氣體形式饋送至反應室。在一些具體例中,不使用用於使前驅物氧化、氮化或碳化之反應物氣體,或替代性在其他具體例中,使用用於使前驅物氧化、氮化或碳化之反應物氣體以用O、N或C對SiC膜進行摻雜。此外,在一些具體例中,不使用反應物氣體,且僅使用稀有氣體(以運載氣體及/或稀釋氣體形式)作為添加劑氣體。在一些具體例中,僅使用稀有氣體及氫化物氣體作為添加劑氣體。前驅物及添加劑氣體可以混合氣體形式或個別地引入至反應空間。前驅物可利用運載氣體(諸如稀有氣體)引入。除製程氣體外之氣體(亦即,沒有通過噴灑頭所引入之氣體)可用於例如密封反應空間,該氣體包括諸如稀有氣體之密封氣體。在一些具體例中,術語「前驅物」一般意指參與產生另一種化合物之化學反應的化合物,且尤其意指構成膜之膜基體或主要架構的化合物,而術語「反應物」意指除前驅物外之化合物,其使前驅物活化、對前驅物進行改質或催化前驅物之反應,其中當施加RF功率時,反應物可向膜基體提供元素(諸如N、C)並成為膜基體之一部分。術語「惰性氣體」意指當施加RF功率時激發前驅物之氣體,但不同於反應物,其未成為膜基體之一部分。
在一些具體例中,「膜」意指在垂直於厚度方向之方向上實質上無小孔地連續延伸以覆蓋整個目標或有關表面的層,或僅僅為覆蓋目標或有關表面之層。在一些具體例中,「層」意指形成於表面上的具有特定厚度之結構或膜之同義詞或非膜結構。膜或層可由具有特定特徵之離散單一膜或層或者多個膜或層構成,且相鄰膜或層之間的邊界可為或可不為明顯的且可基於相鄰膜或層之物理、化學及/或任何其他特徵、形成製程或序列及/或功能或用途而建立。此外,在本揭示案中,變數之任何兩個數字可構成變數之可工作範圍,因為可工作範圍可基於例行工作來確定,且所指示之任何範圍可包括或不包括端點。另外,所指示的變數之任何數值(不管該等數值是否用「約」來指示)可意指精確值或近似值且包括等效值,且在一些具體例中可意指平均值、中值、代表值、多數值等。此外,在本揭示案中,在一些具體例中,術語「由…構成」及「具有」獨立地意指「通常或廣泛地包含」、「包含」、「基本上由…組成」或「由…組成」。在本揭示案中,一些具體例中的任何所定義之意思未必排除一般及慣用意思。
在本揭示案中條件及/或結構未得到具體規定之處,熟悉本技藝者可鑒於本揭示案容易地提供此類條件及/或結構,作為常規實驗內容。
在所有所揭示之具體例中,一個具體例中所使用之任何要素可由與之等效的任何要素替換,包括出於預期目的而在本文中明確地、必須地或固有地揭示之彼等要素。此外,本發明同樣可適用於設備及方法。
將參考較佳具體例來解釋該等具體例。然而,本發明並非侷限於該等較佳具體例。
在一些具體例中,一種在具有凹槽圖案之基板上形成碳化矽膜的方法,該碳化矽膜於633 nm處所量測之反射指數為2.3或更高,該方法包含以下步驟:(i)以脈衝形式向置放有該基板之反應空間中供應有機矽烷前驅物,該前驅物具有式RSiH3
,其中R為包括至少一個不飽和鍵之含烴部分;(ii)向該反應空間中連續供應電漿產生性氣體,該電漿產生性氣體選自由惰性氣體及氫化物氣體組成之群;(iii)向該反應空間連續施加RF功率以產生電漿,該電漿激發該前驅物;及(iv)重複步驟(i)至(iii),藉此在該基板上形成碳化矽膜,該碳化矽膜於633 nm處所量測之反射指數(RI)為2.3或更高(例如2.3至2.9,較佳2.5至2.8)。當膜之RI在範圍內時,該膜之回蝕可控性可得到改良,且因此,藉由例如將該膜暴露於氫電漿中,該膜之平面部分(亦即,沉積在基板之頂部表面上的部分及/或沉積在凹槽之底部處的部分)可容易地得到回蝕以便改良該膜之保形性或步階覆蓋率。一般而言,RI愈高,藉由氫電漿或Ar電漿回蝕之膜愈多。此外,RI較高之膜傾向於含有更多矽原子,而RI較低之膜傾向於含有更多碳原子。表示出上文RI之RI值可為在平面部分中量測之值。
當使用具有式RSH3
之前驅物,其中R為包括至少一個不飽和鍵,較佳雙鍵或三鍵之含烴部分時,因為前驅物具有每矽相對較少之反應性基團及較多之Si-H鍵,故前驅物之反應性變得較高,亦即,即使當暴露於低能量電漿中(低電漿功率)時仍顯現出高反應性。因此,不僅可改良保形性或步階覆蓋率,且亦可改良圖案負載特性。
在上文中,步驟(i)為間歇性的,而步驟(ii)及(iii)為連續的,且因此,此技術可稱為「氣體脈衝電漿CVD」。
在本揭示案中,溝槽、通孔及任何其他凹槽稱為「凹槽」。在一些具體例中,圖案由凹槽構成。在一些具體例中,凹槽之寬度為10至50 nm (通常為15 to 30 nm),深度為30至200 nm (通常50至150 nm),且縱橫比為3至20 (通常為3至10)。
在構成沉積步驟之步驟(i)至(iv)中,可藉由以下來沉積具有相對良好步階覆蓋率之膜,供應相對較少量之前驅物(例如,每分鐘0.001 g至0.1 g),將其暴露於惰性氣體之電漿或惰性氣體及氫之電漿中,其中發生惰性氣體電漿之濺射或氫電漿之蝕刻,藉此調整沉積在基板之頂部表面上的膜之平面部分的厚度,以便控制該膜之拓樸結構。應指出,氫化物氣體係用於回蝕作用,而非併入至膜中(該膜之組成無變化)。
在一些具體例中,有機矽烷前驅物為單乙醯基矽烷、單乙烯基矽烷或苯基矽烷。
在一些具體例中,在步驟(i)中,將有機矽烷前驅物與運載氣體一起進行供應,其中該運載氣體為惰性氣體。
在一些具體例中,在步驟(i)中,連續供應運載氣體。
在一些具體例中,在步驟(ii)中,電漿產生性氣體為選自由稀有氣體及氮氣組成之群的惰性氣體。
在一些具體例中,電漿產生性氣體進一步含有氫化物氣體。
在一些具體例中,氫化物氣體為氫氣。
在一些具體例中,步驟(i)及步驟(iv)在0℃至500℃之製程溫度下進行。
在一些具體例中,製程溫度為100℃或更低。當前驅物組分在吸附於表面上後進行聚合之製程溫度為100℃或更低(例如75℃或更低)時,組分有時形成可流動之液體材料以替代形成大塊膜。在該情況下,可流動之液體材料可利用其表面張力而用作間隙填充劑,填充溝槽或其他凹槽。
在一些具體例中,該方法在步驟(i)到步驟(iv)之後進一步包含以下步驟:(v)在不向反應空間中供應前驅物或任何其他前驅物的情況下,供應回蝕氣體以用於回蝕在步驟(iv)中沉積之碳化矽的平面部分;及(vi)在於步驟(v)中供應回蝕氣體的同時,向該反應空間施加RF功率,藉此回蝕沉積在基板之頂部表面及凹槽圖案之底部上的碳化矽膜之平面部分。當所沉積之膜的保形性或拓樸結構不令人滿意時,可視需要進行構成回蝕步驟之步驟(v)及(vi)。通常,當進行回蝕步驟時,在進行回蝕步驟之前淨化反應空間,以使得實質上沒有前驅物或與該前驅物相關聯或來源於該前驅物之組分存在於該反應空間中。在回蝕步驟中,未沉積膜。在一些具體例中,在每數個至每數百個沉積步驟循環之後進行一次回蝕步驟,以使得膜之拓樸結構可得到調整,其中沉積步驟及回蝕步驟構成成膜步驟之循環,其可進行重複直至達成膜之所需拓樸結構為止。
在一些具體例中,回蝕氣體為選自由惰性氣體及氫化物氣體組成之群的至少一種氣體。
在一些具體例中,回蝕氣體由稀有氣體及氫氣構成。
在一些具體例中,在整個步驟(i)至步驟(vi)中連續供應回蝕氣體。
在一些具體例中,步驟(i)至(vi)構成一個循環,且進行重複直至獲得碳化矽膜之所需厚度為止。
在一些具體例中,該方法在於(iv)步驟中重複步驟(i)至(iii)之後進一步包含以下步驟:(v’)在不施加RF功率且在不存在前驅物或任何其他前驅物的情況下,向反應空間中供應惰性氣體(不供應氫化物氣體);及(vi')在向反應空間中連續供應惰性氣體(不供應氫化物氣體)的同時,向該反應空間施加RF功率,藉此進一步回蝕碳化矽膜之平面部分。步驟(v)與步驟(v')之間的差異及步驟(vi)與步驟(vi'')之間的差異為在步驟(v')及(vi'')中不存在氫化物氣體。若膜之所需拓樸結構在沉積步驟後不需要明顯調整,則可執行步驟(v'')及(vi'')以代替步驟(v)及(vi)。
在一些具體例中,在整個步驟(i)至(vi)中連續供應惰性氣體,其中該惰性氣體在步驟(i)及(ii)中用作運載氣體及稀釋氣體,且在步驟(v')及(vi')中用作回蝕氣體之至少一部分。
具體例將就圖式中所例示說明之具體例來進行解釋。然而,本發明不限於圖式中所例示說明之具體例。
圖2至6各自顯示根據本發明一個具體例的一個循環(主循環)中之氣體脈衝PECVD之示意性製程序列與一個循環(第二循環)中之電漿回蝕之示意性製程序列的組合,其中灰色格子表示「開」狀態(較深灰色表示較高強度),而白色格子表示「關」狀態,且各欄之寬度不表示各製程之持續時間。圖2至6中所示之具體例為不限制本發明之例示性具體例。
圖2至6中所例示說明之製程序列包含沉積步驟及回蝕步驟,進行該回蝕步驟以調整所沉積之膜的拓樸結構及厚度,且因此若沉積步驟提供所沉積之膜的所需拓樸結構/厚度,則不進行回蝕步驟。在沉積步驟中,在「沉積」中間歇地或以脈衝形式供應前驅物,同時在「沉積」及「處理1」中向反應空間連續施加RF功率,其中「沉積」及「處理1」構成一個沉積步驟循環。可重複該循環數次至數百次,直至獲得膜之所需厚度為止。在「處理1」中,因為沒有向反應空間中供應前驅物,未沉積膜。在整個沉積步驟中,向反應空間中連續供應惰性氣體作為電漿產生性氣體。在圖2、3及6中所例示說明之製程序列中,在沉積步驟中,向反應空間中連續供應氫化物氣體,而在圖4及5中所例示說明之製程序列中,未供應氫化物氣體。當例如沉積在其中形成有溝槽之頂部表面上的膜之一部分的厚度在拓樸學上不合需要地大於沉積在溝槽之側壁上的膜之一部分的厚度時,使用氫化物氣體,其中該氫化物氣體用作回蝕氣體,且氫氣自由基可回蝕沉積在該頂部表面上之膜部分超過沉積在該等側壁上之膜部分,藉此調整該膜之拓樸結構。若拓樸結構調整不足夠,則在重複沉積步驟數次至數百次之後,進行回蝕步驟。
在圖2至6中所例示說明之製程序列中,回蝕步驟包含在不施加RF功率的情況下對反應空間進行淨化之「氣體流動」,以便自該反應空間去除前驅物及與該前驅物相關聯或來源於該前驅物之任何其他組分;及向該反應空間施加RF功率之「處理2」,其中向該反應空間連續供應惰性氣體作為淨化氣體及電漿產生性氣體。藉由RF功率產生之惰性氣體電漿藉由濺射作用回蝕沉積在頂部表面上之膜部分。在圖2、5及6中所例示說明之製程序列中,在回蝕步驟中,向反應空間中連續供應氫化物氣體,而在圖3及4中所例示說明之製程序列中,未供應氫化物氣體。當例如沉積在其中形成有溝槽之頂部表面上的膜部分的厚度在拓樸學上不合需要地大於沉積在溝槽之側壁上的膜部分的厚度時,使用氫化物氣體,其中該氫化物氣體用作回蝕氣體,且氫氣自由基可回蝕沉積在該頂部表面上之膜部分超過沉積在該等側壁上之膜部分,藉此調整該膜之拓樸結構。
在「處理1」及「處理2」中RF功率之強度方面,圖6中所例示說明之製程序列與圖2中所例示說明之製程序列不同,其中圖6中所例示說明之製程序列在「處理1」及「處理2」中所使用的RF功率比圖2中的RF功率或比圖6中之「沉積」中的RF功率高(例如,高1.1倍至3倍,或高1.5倍至2.5倍),以使得更多回蝕作用得到顯現(在其他序列中,RF功率在成膜製程中恆定)。
重複沉積步驟及回蝕步驟,直至可獲得膜之所需拓樸結構/厚度為止。圖7為例示說明根據本發明一個具體例之成膜步驟的流程圖。在一些具體例中,視預期目的及應用而定,所沉積之膜的厚度為5 nm至100 nm,通常為8 nm至30 nm。
如先前所提及,此製程為氣體脈衝PECVD製程,其中前驅物之聚合反應在反應空間中之氣相中進行,而非如同PEALD製程中僅僅在基板之表面上進行。在氣體脈衝PECVD中,氣體供應如同PEALD中呈脈衝式並非因為如同在PEALD中,前驅物進行自限性化學吸附,繼而與受激發之反應物氣體進行表面反應以沉積膜;而是因為在不供應前驅物得同時藉由電漿對所沉積之膜進行回蝕以調整該膜之拓樸結構。
在一些具體例中,沉積步驟之「沉積」及「處理1」以及回蝕步驟之「氣體流動」及「處理2」可在下表1中所示之條件下執行。
在本揭示案中,對於300 mm晶圓所指示之任何RF功率可轉換成W/cm2
(每晶圓單位面積之瓦數),其可適用於具有不同直徑(諸如200 mm或450 mm)之晶圓。
在本揭示案中所描述之製程序列中,前驅物可使用連續供應之運載氣體以脈衝形式進行供應。此操作可使用流通系統(FPS)來實現,其中運載氣體管線具備具有前驅物儲槽(瓶)之歧路管線,且主管線及歧路管線經切換,其中當僅意欲將運載氣體饋送至反應室時,關閉歧路管線,而當意欲將運載氣體及前驅物氣體兩者饋送至反應室時,主管線關閉且運載氣體流過歧路管線且與前驅物氣體一起自瓶流出。以此方式,運載氣體可連續地流至反應室中,且可藉由切換主管線及歧路管線而以脈衝方式載運前驅物氣體。圖1B例示說明根據本發明一個具體例的使用流通系統(FPS)之前驅物供應系統(黑色閥指示該等閥關閉)。如圖1B中之(a)所示,當將前驅物饋送至反應室(未圖示)時,首先,諸如Ar (或He)之運載氣體流過具有閥b及c之氣體管線,且接著進入瓶(儲槽) 30。運載氣體自瓶30流出,同時載運對應於瓶30內蒸氣壓力之量的前驅物氣體,且流過具有閥f及e之氣體管線,且接著與前驅物一起饋送至反應室。在上文中,閥a及d關閉。當僅將運載氣體(稀有氣體)饋送至反應室時,如圖1B中之(b)所示,運載氣體流過具有閥a之氣體管線,同時繞過瓶30。在上文中,閥b、c、d、e及f關閉。
前驅物可藉助運載氣體來提供。用於沉積之電漿可於原位產生,例如,於在整個沉積循環中連續流動之惰性氣體氛圍中。在其他具體例中,電漿可於遠端產生且提供至反應室。
可使用例如包括圖1A中所例示說明之設備的任何適合之設備來執行製程循環。圖1A為氣體脈衝PECVD設備之示意圖,其期望地結合可編程以進行下文所描述之序列的控制,可用於本發明之一些具體例中。在此圖中,藉由在反應室3之內部11 (反應區)中設置彼此平行且面對的一對導電之平板電極4、2,向一側施加HRF功率(13.56 MHz或27 MHz) 20且將另一側12電接地,在該等電極之間激發電漿。溫度調節器設置在下台(lower stage) 2 (下部電極)中,且置放在其上之基板1的溫度在給定溫度下保持恆定。上部電極4亦充當噴淋板,且反應氣體(及稀有氣體)及前驅物氣體分別經由氣體管線21及氣體管線22及經由噴淋板4而引入至反應室3中。另外,在反應室3中,設置具有排氣管線7之圓管13,經由所述排氣管線將反應室3之內部11中的氣體排出。另外,稀釋氣體經由氣體管線23而引入至反應室3中。此外,安置於反應室3下方之轉移室5具備密封氣體管線24以經由轉移室5之內部16 (轉移區)將密封氣體引入至反應室3之內部11中,其中設置有用於將反應區與轉移區隔開之分隔板14 (自此圖省略閘閥,晶圓經由該閘閥轉移至轉移室5中或自該轉移室轉移)。轉移室亦具有排氣管線6。在一些具體例中,多元素膜沉積及表面處理在同一反應空間中執行,以使得所有步驟可連續進行,而不會將基板暴露於空氣或其他含氧氛圍中。在一些具體例中,遠端電漿單元可用於激發氣體。
在一些具體例中,在圖1A中所描繪之設備中,可使用圖1B中所例示說明的切換惰性氣體之流動與前驅物氣體之流動的系統(先前描述)來以脈衝形式引入前驅物氣體,而不使反應室壓力出現實質波動。
在一些具體例中,可使用雙腔室反應器(彼此緊密安置的兩個用於加工晶圓之區段或隔室),其中反應物氣體及稀有氣體可經由共用管線來供應,而前驅物氣體經由非共用管線來供應。
熟悉本技藝者應瞭解,設備包括一個或多個控制器(未顯示),其可經編程或另外構造成進行本文中別處所描述之沉積及反應器清潔製程。如熟悉本技藝者所瞭解,該(等)控制器與各種電源、加熱系統、泵、機器人及反應器之氣體流量控制器或閥聯通。
本發明將參考下文工作實施例來進行進一步解釋。然而,所述實施例並不意欲限制本發明。在條件及/或結構未得到具體規定之實施例中,熟悉本技藝者可鑒於本揭示案容易地提供此類條件及/或結構,作為常規實驗內容。此外,在一些具體例中,特定實施例中所應用之數字可在至少±50%之範圍內進行修改,且該等數字為近似值。
實施例
在通用條件下在具有縱橫比為約3且開口寬度為約50 nm的經圖案化之表面的300 mm基板上形成碳化矽膜,其中運載氣體(Ar)之流動速率為2 slm,製程壓力為400 Pa,溫度為350℃,RF功率為100 W,「沉積」(參見圖2-6)持續時間為0.1秒,「處理1」(參見圖2-6)持續時間為1秒,且沉積循環之數目為80,其中特定條件顯示於下表2中(沉積步驟在不進行回蝕步驟的情況下進行),且氣體脈衝PECVD設備例示說明於圖1A中且氣體供應系統(FPS)例示說明於圖1B中。為了評估膜特性,膜(沉積在頂部表面上)之厚度為10 nm。
評估膜之特性,且結果顯示於下表3中。
在上文中,術語「側面覆蓋率」意指在溝槽之側壁上所沉積之膜厚度相對於在基板之頂部表面上所沉積之膜厚度的比率(%)。術語「圖案負載率」意指在溝槽側壁上溝槽密度較高之密集區域中所沉積之膜厚度相對於在溝槽側壁上溝槽密度較低之分隔區域中所沉積之膜厚度的比率(%)。術語「TOX之100:1 DHF WERR」意指當在室溫下於稀HF溶液(1%)中浸沒一分鐘時,在基板之頂部表面上所沉積之膜的濕式蝕刻速率相對於熱氧化物膜在相同濕式蝕刻條件下之濕式蝕刻速率的比率。術語「GPC (奈米/循環)」意指沉積在基板之頂部表面上之膜的每循環生長速率。術語「RI@633nm」意指沉積在基板之頂部表面上之膜的反射指數(在633 nm之波長處)。
如表3中所示,在實施例1至實施例5中之每一個中,當具有式RSiH3
,其中R為包括至少一個不飽和鍵之含烴部分的前驅物用於藉由氣體脈衝PECVD來沉積碳化矽膜時,該膜之RI為2.3或更高,且該膜之所有特性(側面覆蓋率、圖案負載率及濕式蝕刻抗性)優異。相比之下,在比較例1及比較例2 (比較例)中之每一個中,當除上文前驅物外之前驅物用於藉由氣體脈衝PECVD來沉積碳化矽膜時,該膜之RI小於2.3,且總體特性不令人滿意。
熟悉本技藝者將理解,在不脫離本發明之精神的情況下,可進行大量及各種修改。因此,應清楚理解,本發明之形式僅為例示說明性的,而不意欲限制本發明之範疇。
現在將參考意欲例示說明而非限制本發明之較佳具體例的圖式來描述本發明之此等及其他特徵。該等圖式經大大簡化以用於例示說明性目的且未必按比例繪製。
圖1A為用以沉積可用於本發明一個具體例中之介電膜的氣體脈衝電漿增強型CVD (PECVD)設備的示意圖。
圖1B繪示可用於本發明一個具體例中的使用流通系統(flow-pass system,FPS)之前驅物供應系統的示意圖。
圖2至6各自顯示根據本發明一個具體例的一個循環(主循環)中之氣體脈衝PECVD之示意性製程序列與一個循環(第二循環)中之電漿回蝕之示意性製程序列的組合,其中灰色格子表示「開」狀態(較深灰色表示較高強度),而白色格子表示「關」狀態,且各欄之寬度不表示各製程之持續時間。
圖7為例示說明根據本發明一個具體例之成膜步驟的流程圖。
1:基板
2:平板電極/下台/下部電極
3:反應室
4:平板電極/上部電極/噴淋板
5:轉移室
6:排氣管線
7:排氣管線
11:反應室內部/反應區
12:另一側
13:圓管
14:分隔板
16:轉移室內部/轉移區
20:HRF功率
21:氣體管線
22:氣體管線
23:氣體管線
24:密封氣體管線
Claims (16)
- 一種在具有凹槽圖案之基板上形成碳化矽膜的方法,該碳化矽膜於633 nm處所量測之反射指數為2.3或更高,該方法包含以下步驟: (i)以脈衝形式向置放有該基板之反應空間中供應有機矽烷前驅物,該前驅物具有式RSiH3 ,其中R為包括至少一個不飽和鍵之含烴部分; (ii)向該反應空間中連續供應電漿產生性氣體,該電漿產生性氣體選自由惰性氣體及氫化物氣體組成之群; (iii)向該反應空間連續施加RF功率以產生電漿,該電漿激發該前驅物;及 (iv)重複步驟(i)至(iii),藉此在該基板上形成碳化矽膜,該碳化矽膜於633 nm處所量測之反射指數為2.3或更高。
- 如請求項1之方法,其中該有機矽烷前驅物為單乙醯基矽烷、單乙烯基矽烷或苯基矽烷。
- 如請求項1之方法,其中在步驟(i)中,將該有機矽烷前驅物與運載氣體一起進行供應,其中該運載氣體為惰性氣體。
- 如請求項3之方法,其中在步驟(i)中,連續供應該運載氣體。
- 如請求項1之方法,其中在步驟(ii)中,該電漿產生性氣體為選自由稀有氣體及氮氣組成之群的惰性氣體。
- 如請求項5之方法,其中該電漿產生性氣體進一步含有氫化物氣體。
- 如請求項6之方法,其中該氫化物氣體為氫氣。
- 如請求項1之方法,其中步驟(i)及步驟(iv)在0℃至500℃之製程溫度下進行。
- 如請求項8之方法,其中該製程溫度為100℃或更低。
- 如請求項1之方法,其在步驟(i)到步驟(iv)之後進一步包含以下步驟: (v)在不向該反應空間中供應該前驅物的情況下,供應回蝕氣體以用於回蝕在步驟(iv)中沉積之該碳化矽的平面部分;及 (vi)在於步驟(v)中供應該回蝕氣體的同時,向該反應空間施加RF功率,藉此回蝕沉積在該基板之頂部表面及該凹槽圖案之底部上的該碳化矽膜之平面部分。
- 如請求項10之方法,其中該回蝕氣體為選自由惰性氣體及氫化物氣體組成之群的至少一種氣體。
- 如請求項11之方法,其中該回蝕氣體由稀有氣體及氫氣構成。
- 如請求項10之方法,其中在整個步驟(i)至步驟(vi)中連續供應該回蝕氣體。
- 如請求項10之方法,其中步驟(i)至(vi)構成一個循環,且進行重複直至獲得該碳化矽膜之所需厚度為止。
- 如請求項14之方法,其在於(iv)步驟中重複步驟(i)至(iii)之後進一步包含: (v')在不施加RF功率的情況下,向該反應空間中供應惰性氣體;及 (vi')在向該反應空間中連續供應該惰性氣體的同時,向該反應空間施加RF功率,藉此進一步回蝕該碳化矽膜之該平面部分。
- 如請求項15之方法,其中在整個步驟(i)至(vi)中連續供應該惰性氣體,其中該惰性氣體在步驟(i)及(ii)中用作運載氣體及稀釋氣體,且在步驟(v')及(vi')中用作該回蝕氣體之至少一部分。
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CN111048400A (zh) | 2020-04-21 |
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US10847365B2 (en) | 2020-11-24 |
CN111048400B (zh) | 2022-08-05 |
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