TW201705334A - 磁性的承載體至底板的封口 - Google Patents
磁性的承載體至底板的封口 Download PDFInfo
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Abstract
揭示的是用於處理半導體基板的反應系統。尤其,本發明揭示用於當基板放入反應區域裡時之承載體和底板的安排。磁鐵嵌入承載體和底板裡以便在二者之間生成間隙。由於間隙的結果,本發明避免先前技藝系統所會存在的氣態材料累積以及由於零件之間的實體接觸而產生顆粒。
Description
本揭示大致關於半導體處理工具。本揭示尤其關於包括承載體和底板的晶圓操持機制。
半導體處理典型而言涉及在稱為基板的薄片半導體材料上製作例如電晶體、二極體、積體電路的裝置。半導體處理發生在反應區域中,其中氣體在基板上方通過,導致材料受控制的沉積在基板上。基板是由承載體舉升到反應區域裡。
在處理期間,間隙形成在承載體和反應區域的底板之間。間隙的目的是允許反應區域裡面和承載體外面之間有流體連通。有了間隙,則包含反應性材料的外來氣體可以離開反應區域。附帶而言,間隙是用於以受控制和均勻的方式來控制氣體流動進出反應區域。
附帶而言,間隙是必要的,因為承載體和底板之間的直接實體接觸或可導致顆粒產生。直接實體接觸導致從承載體或底板釋放出顆粒。顆粒的產生是有麻煩的,因為最小的顆粒可以污染並且可能引起處理基板中的缺陷。
承載體和底板之間的均勻間隙已經是所要的以避免產生顆粒的問題。附帶而言,均勻的間隙將保持氣體在整個封口周圍均勻的流動
進出反應腔室。先前技藝對於半導體處理的做法已經利用配置在承載體和底板之間的襯墊以便維持均勻的間隙。襯墊避免承載體和底板之間的直接實體接觸。襯墊的高度範圍可以在0.001英吋(差不多25微米)和約0.05英吋(差不多1275微米)之間。
隨著時間,持續的處理可以導致反應性材料沉積在承載體的襯墊上和周圍。這沉積累積可以導致承載體和底板之間的間隙尺寸縮減。類似於顆粒產生,沉積累積可以引起處理基板之污染和缺陷的問題。因此,想要在承載體和底板之間具有均勻的間隙安排,而不沉積累積反應性材料和產生顆粒。
本揭示的實施例有關用於處理基板的反應系統,其包括:建構成握持基板的承載體、反應區域的底板、至少一承載體磁鐵、至少一底板磁鐵。至少一承載體磁鐵和至少一底板磁鐵的交互作用生成排斥力以維持承載體和底板之間的間隙。
本揭示的實施例也有關用於處理基板的反應系統,其包括:反應區域、基板裝載區域、移動元件、反應物分布系統、底板、第一承載體磁鐵、第一底板磁鐵。第一承載體磁鐵和第一底板磁鐵的交互作用生成排斥力以維持承載體和底板之間的間隙。
為了綜述本發明和達成勝過先前技藝的優點,前文已經描述了本發明的特定目的和優點。當然,要了解未必所有此種目的或優點可以依據本發明的任何特殊實施例而達成。因此,舉例而言,熟於此技藝者將體察本發明可以採取達成或優化如在此教導或建議之某一優點或一組優點
的方式來實現或進行,而未必達成可以在此教導或建議的其他目的或優點。
這些實施例都打算是於在此揭示的發明範圍裡。從下面參考所附圖式之特定實施例的詳細敘述,這些和其他實施例對於熟於此技藝者而言將輕易變得明白,而本發明不限於揭示的(多個)任何特殊實施例。
100‧‧‧反應系統
105‧‧‧反應區域
110‧‧‧基板裝載區域
115‧‧‧底板
115A‧‧‧下表面
120‧‧‧反應區域殼罩
125‧‧‧反應物分布系統
130‧‧‧基板裝載殼罩
135‧‧‧基板
140‧‧‧承載體
140A‧‧‧下表面
140B‧‧‧徑向表面
140C‧‧‧上表面
145‧‧‧移動元件
150‧‧‧舉升栓
160‧‧‧承載體磁鐵
170‧‧‧底板磁鐵
180‧‧‧間隙
200‧‧‧反應系統
205‧‧‧反應區域
210‧‧‧基板裝載區域
215‧‧‧底板
215A‧‧‧下表面
220‧‧‧反應區域殼罩
225‧‧‧反應物分布系統
230‧‧‧基板裝載殼罩
235‧‧‧基板
240‧‧‧承載體
240A‧‧‧下表面
240B‧‧‧徑向表面
240C‧‧‧上表面
245‧‧‧移動元件
250‧‧‧舉升栓
260‧‧‧承載體磁鐵
265‧‧‧承載體磁鐵
270‧‧‧底板磁鐵
280‧‧‧間隙
300‧‧‧反應系統
305‧‧‧反應區域
310‧‧‧基板裝載區域
315‧‧‧底板
315A‧‧‧下表面
315B‧‧‧徑向表面
320‧‧‧反應區域殼罩
325‧‧‧反應物分布系統
330‧‧‧基板裝載殼罩
335‧‧‧基板
340‧‧‧承載體
340A‧‧‧下表面
340B‧‧‧徑向表面
340C‧‧‧上表面
345‧‧‧移動元件
350‧‧‧舉升栓
360‧‧‧承載體磁鐵
365‧‧‧承載體磁鐵
370‧‧‧底板磁鐵
380‧‧‧間隙
385‧‧‧間隙
400‧‧‧反應系統
405‧‧‧反應區域
410‧‧‧基板裝載區域
415‧‧‧底板
415A‧‧‧下表面
415B‧‧‧徑向表面
420‧‧‧反應區域殼罩
425‧‧‧反應物分布系統
430‧‧‧基板裝載殼罩
435‧‧‧基板
440‧‧‧承載體
440A‧‧‧下表面
440B‧‧‧徑向表面
440C‧‧‧上表面
445‧‧‧移動元件
450‧‧‧舉升栓
460‧‧‧承載體磁鐵
470‧‧‧底板磁鐵
480‧‧‧間隙
485‧‧‧間隙
在此揭示之本發明的這些和其他特色、方面、優點乃在下面參考特定實施例的圖式來描述,其打算示範而非限制本發明。
圖1示意顯示反應系統的實施例,其所包括的承載體是在基板裝載位置。
圖2示意顯示承載體和基板的正視圖。
圖3示意顯示底板的正視圖。
圖4示意顯示反應系統的實施例,其所包括的承載體是在基板處理位置。
圖5示意顯示底板和承載體的放大圖,其是在如圖4所示的基板處理位置。
圖6示意顯示反應系統的實施例,其所包括的承載體是在基板裝載位置。
圖7示意顯示承載體和基板的正視圖。
圖8示意顯示反應系統的實施例,其所包括的承載體是在基板處理位置。
圖9示意顯示底板和承載體的放大圖,其是在如圖8所示的基板處理位置。
圖10示意顯示反應系統的實施例,其所包括的承載體是在基板裝載位置。
圖11示意顯示反應系統的實施例,其所包括的承載體是在基板處理位置。
圖12示意顯示底板和承載體的放大圖,其是在如圖11所示的基板處理位置。
將體會圖中的元件乃為了簡潔明確而示範,並且未必按照比例來繪製。舉例而言,圖中某些元件的尺度可以相對於其他元件而有所誇大以幫助改善對於本揭示所示範之實施例的理解。
雖然下面揭示了實施例和範例,但是此技藝的人士將了解本發明延伸超越本發明所特定揭示的實施例和/或用途以及顯而易知的修改及其等同者。因此,揭示的發明範圍打算不應受限於下述特殊揭示的實施例。
本發明的實施例乃針對反應系統,其用於處理基板。反應系統包括用於握持基板的承載體。如在此所用,「基板」(substrate)是指具有可以沉積材料在上面之表面的任何材料。反應系統也包括由底板所部分界定的反應區域。承載體將裝載了基板,然後將基板帶入反應區域裡供處理。在處理期間,材料的沉積可以在基板上發生。於本發明的實施例,磁鐵可以用於承載體和底板二者以便在承載體和底板之間形成間隙。間隙允許材料從反應區域通出來。附帶而言,間隙允許氣體均勻而受控制的流動進出反應區域。間隙的尺寸可以透過使用力測量計來監視以確保有一致和可重
複的間隙。
本發明的實施例將允許調整間隙的尺寸,而不拆解反應器來改變成不同尺寸的襯墊,以調整過程或補償由於反應物材料沉積所造成的間隙改變。附帶而言,本發明的實施例免除襯墊和底板之間的任何實體接觸。即使襯墊佔了小面積,襯墊仍實體接觸底板而導致顆粒產生。最後,本發明的實施例可以允許承載體在半導體基板的處理期間做連續旋轉。
圖1示範用於處理基板之反應系統100的第一實施例。反應系統100包括反應區域105和基板裝載區域110。底板115分開反應區域105與基板裝載區域110。反應區域105是由反應區域殼罩120和反應物分布系統125所部分界定。基板裝載區域110是由基板裝載殼罩130所部分界定。
反應物分布系統125負責提供會沉積在基板上的材料。雖然反應物分布系統125顯示為蓮蓬頭分布系統,不過此技藝中的一般人士會了解反應物分布系統125可以採取另一形式而成交叉流動分布系統。此種交叉流動分布系統揭示於頒給White等人的美國專利第8,216,380號,標題為「用於對製程腔室之開口的間隙維持」,其內容就不與本揭示衝突的程度下併於此以為參考。
如先前所言,基板135裝載到承載體140上。承載體140能夠以移動元件145的操作而移動。移動元件145可以建構成上下移動承載體140和基板135。如圖1所示,移動元件145具有在基板裝載位置的承載體140。移動元件145也可以建構成旋轉承載體140和基板135。附帶而言,承載體140也可以具有舉升栓150以從承載體140來裝載和卸載基板135。此種移動元件和舉升栓揭示於美國專利第8,216,380,其內容就不與本揭示衝
突的程度下併於此以為參考。
承載體140具有幾個表面:下表面140A、徑向表面140B、上表面140C。在承載體140的下表面140A裡,配置了承載體磁鐵160。於底板115之下表面115A上的對應位置,配置了底板磁鐵170。承載體磁鐵160和底板磁鐵170將能夠使間隙形成在承載體140和底板115之間。
圖2是裝載到承載體140上之基板135的正視圖。基板135裝載到承載體140由上表面140C所界定的部分上。如之前所言,承載體磁鐵160配置在承載體140的下表面140A裡。雖然承載體磁鐵160示範成圓環形,不過此技藝中的一般人士會體察承載體磁鐵160或可為沿著下表面140A之多樣的點所配置的一系列磁鐵。舉例而言,承載體磁鐵160或可是四個均等隔開之分開的磁鐵。
圖3是反應區域105之底板115的正視圖。底板磁鐵170嵌在底板115的下表面115A裡。類似於承載體磁鐵160,雖然底板磁鐵170示範成圓環形,不過此技藝中的一般人士會體察底板磁鐵170或可是沿著下表面115A之多樣的點所配置的一系列磁鐵。舉例而言,底板磁鐵170或可是均等隔開之四個分開的磁鐵,每一者可以對應於承載體140中均等隔開之四個分開的磁鐵。
圖4示範圖1所示的反應系統100,其中承載體140藉由移動元件145而從基板裝載區域110中的基板裝載位置舉升到反應區域105中的基板處理位置。基板135現在是在反應區域105裡,使得反應物分布系統125可以採取蓮蓬頭或交叉流動安排而將材料沉積到基板135上。
圖5顯示圖4的放大圖。承載體磁鐵160嵌在承載體140裡,
使得承載體磁鐵160的正極(+)可以與嵌入底板115中之底板磁鐵170的對應正極(+)交互作用。雖然示範的是二磁鐵的正極交互作用,但是此技藝中的一般人士會了解承載體磁鐵160和底板磁鐵170可以安排成使得其負極可以交互作用。
磁鐵的二正極之間的排斥導致生成間隙180。間隙180的範圍可以在0.001和0.05英吋之間。此技藝中的一般人士將體察間隙的尺寸將取決於磁鐵的強度和反應器零件的尺寸和質量。間隙150裡沒有襯墊所提供的好處是避免反應物材料沉積累積在間隙150裡。附帶而言,沒有襯墊將免除零件之間的所有機械接觸,而可能減少產生機械缺陷的機率。如先前所言,間隙150的尺寸可以使用力測量計(圖中未顯示)來監視。
承載體磁鐵160和底板磁鐵170都必須能夠在基板135處理期間承受反應區域中的高溫和嚴苛化學品。處理期間之反應區域105裡的溫度範圍可以在150℃和550℃之間。釤鈷磁鐵能夠承受這些高溫,因為其可操作的溫度範圍在400℃和550℃。也可以使用銣,因為其可操作的溫度範圍在80℃和200℃。此技藝中的一般人士可以體察或許可能使用其他的高溫磁鐵。
圖6示範用於處理基板之反應系統200的另一實施例。反應系統200包括反應區域205和基板裝載區域210。底板215分開反應區域205與基板腔室210。反應區域205是由反應區域殼罩220和反應物分布系統225所部分界定。反應物分布系統225負責提供會沉積在基板上的材料。此技藝中的一般人士會了解顯示成蓮蓬頭安排的反應物分布系統225可以採取另一形式而成交叉流動分布系統。基板裝載區域210是由基板裝載殼罩230
所部分界定。
如先前所言,基板235裝載到承載體240上。承載體240具有幾個表面:下表面240A、徑向表面240B、上表面240C。承載體240能夠以移動元件245的操作而移動。移動元件245可以建構成上下移動承載體240和基板235。如圖6所示,移動元件245具有在基板裝載位置的承載體240。移動元件218也可以建構成旋轉承載體240和基板235。附帶而言,承載體240也可以具有舉升栓250以從承載體240來裝載和卸載基板235。此種移動元件和舉升栓揭示於美國專利第8,216,380號,其內容就不與本揭示衝突的程度下併於此以為參考。
圖7示範承載體240的正視圖。在承載體240的下表面240A裡,配置了第一承載體磁鐵260和第二承載體磁鐵265。承載體240的上表面240C界定基板235在處理期間所坐落的區域。
圖8示範圖6的實施例,而承載體240是在基板處理位置。底板磁鐵270配置於底板215之下表面215A上的位置。底板磁鐵270的位置對應於第一承載體磁鐵260和第二承載體磁鐵265的位置。第一承載體磁鐵260、第二承載體磁鐵265、底板磁鐵270將能夠使間隙形成在承載體240和底板215之間。雖然較佳的是第一承載體磁鐵260、第二承載體磁鐵265、底板磁鐵270是呈環形,不過本發明並不受限並且思及在底板215和承載體235裡利用一系列磁鐵。
如圖9所示,底板磁鐵270所配置的位置使得它可以與第一承載體磁鐵260和第二承載體磁鐵265二者交互作用。底板磁鐵270的正極(+)與第一和第二承載體磁鐵的正極(+)交互作用以生成排斥力。排斥力導致
形成間隙280。間隙250的範圍可以在0.001和0.05英吋之間。間隙280裡沒有襯墊所提供的好處是避免反應物材料沉積累積在間隙280裡。進一步而言,沒有襯墊將免除零件之間的所有機械接觸,而可能減少產生機械缺陷的機率。
如所示範,底板磁鐵270可以位在第一承載體磁鐵260和第二承載體磁鐵265之間,使得底板磁鐵270可以均等的與二個承載體磁鐵交互作用。然而,底板磁鐵270的位置並不如此受限在第一承載體磁鐵260和第二承載體磁鐵265之間。底板磁鐵270的位置可以變化,以便獲得間隙280所要的尺寸。如先前所言,間隙280的尺寸可以使用力測量計(圖中未顯示)來監視。
圖10示範用於處理基板之反應系統300的另一實施例。反應系統300包括反應區域305和基板裝載區域310。底板315分開反應區域305與基板腔室310。反應區域305是由反應區域殼罩320和反應物分布系統325所部分界定。反應物分布系統325負責提供會沉積在基板上的材料。此技藝中的一般人士會了解顯示成蓮蓬頭安排的反應物分布系統325可以採取另一形式而成交叉流動分布系統。基板裝載區域310是由基板裝載殼罩330所部分界定。
如先前所言,基板335裝載到承載體340上。承載體340具有幾個表面:下表面340A、徑向表面340B、上表面340C。承載體340能夠以移動元件345的操作而移動。移動元件345可以建構成上下移動承載體340和基板335。如圖10所示,移動元件345具有在基板裝載位置的承載體340。移動元件345也可以建構成旋轉承載體340和基板335。附帶而言,承
載體340也可以具有舉升栓350以從承載體340來裝載和卸載基板335。此種移動元件和舉升栓揭示於美國專利第8,216,380號,其內容就不與本揭示衝突的程度下併於此以為參考。
圖11示範圖10的實施例,而承載體316是在基板處理位置。在承載體340的下表面340A裡,配置了第一承載體磁鐵360。在承載體340的徑向表面340B裡,配置了第二承載體磁鐵365。承載體340的上表面340C界定基板335在處理期間所坐落的區域。底板磁鐵370配置於底板315之下表面315A上的位置。底板磁鐵340的位置對應於第一承載體磁鐵360和第二承載體磁鐵365的位置。第一承載體磁鐵360、第二承載體磁鐵365、底板磁鐵370將能夠使間隙形成在承載體340和底板315之間。雖然較佳的是第一承載體磁鐵360、第二承載體磁鐵365、底板磁鐵370是呈環形,不過本發明並不受限並且思及在底板315和承載體340裡利用一系列磁鐵。
如圖12所示,底板磁鐵370所配置的位置使得它可以與第一承載體磁鐵360和第二承載體磁鐵365二者交互作用。底板磁鐵370的正極(+)與第一承載體磁鐵360的正極(+)交互作用以生成排斥力。排斥力導致在承載體340的下表面340A和底板315的下表面315A之間形成間隙380。間隙380的範圍可以在0.001和0.05英吋之間。間隙380裡沒有襯墊所提供的好處是避免反應物材料沉積累積在間隙380裡。進一步而言,沒有襯墊將免除零件之間的所有機械接觸,而可能減少產生機械缺陷的機率。
同時,底板磁鐵370的負極(-)與第二承載體磁鐵365的負極(-)交互作用以生成排斥力。排斥力允許承載體340相對於底板315而居中以
維持承載體的徑向表面340B和底板315的徑向表面315B之間的間隙。間隙尺寸是由相對於底板開口直徑的承載體直徑所設定。於特定的反應腔室,間隙尺寸可以是差不多1.5毫米。
圖13示範用於處理基板之反應系統400的另一實施例。反應系統400包括反應區域405和基板裝載區域410。底板415分開反應區域405與基板腔室410。反應區域405是由反應區域殼罩420和反應物分布系統425所部分界定。反應物分布系統425負責提供會沉積在基板上的材料。此技藝中的一般人士會了解顯示成蓮蓬頭安排的反應物分布系統425可以採取另一形式而成交叉流動分布系統。基板裝載區域410是由基板裝載殼罩430所部分界定。
如先前所言,基板435裝載到承載體440上。承載體440具有幾個表面:下表面440A、徑向表面440B、上表面440C。承載體440能夠以移動元件445的操作而移動。移動元件445可以建構成上下移動承載體440和基板435。如圖13所示,移動元件445具有在基板處理位置的承載體440。移動元件445也可以建構成旋轉承載體440和基板435。附帶而言,承載體440也可以具有舉升栓450以從承載體440來裝載和卸載基板435。此種移動元件和舉升栓揭示於美國專利第8,216,380號,其內容就不與本揭示衝突的程度下併於此以為參考。
在承載體440的下表面440A裡,配置了承載體磁鐵460。承載體440的上表面440C界定基板435在處理期間所坐落的區域。底板磁鐵470配置於底板415之下表面415A上的位置。底板磁鐵440的位置對應於承載體磁鐵460的位置。承載體磁鐵460和底板磁鐵470將能夠使間隙形
成在承載體440和底板415之間。雖然較佳的是承載體磁鐵460和底板磁鐵470是呈環形,不過本發明並不受限並且思及在底板415和承載體440裡利用一系列磁鐵。
如圖14所示,底板磁鐵470所配置的位置使得它可以與承載體磁鐵460交互作用。磁鐵的指向使得承載體磁鐵460和底板磁鐵470都配置在一角度。底板磁鐵470的正極(+)與承載體磁鐵460的正極(+)交互作用以生成排斥力。排斥力則在承載體440的下表面440A和底板415的下表面415A之間生成間隙480。排斥力在承載體440的徑向表面440B和底板415的徑向表面415B之間生成間隙485。間隙480和間隙485的範圍都可以在0.001和0.05英吋之間。間隙裡沒有襯墊所提供的好處是避免反應物材料沉積累積在間隙裡。進一步而言,沒有襯墊將免除零件之間的所有機械接觸,而可能減少產生機械缺陷的機率。
所示和所述的特殊實施例乃在示範本發明和其最佳模式,並且不打算另外以任何方式來限制諸方面和實施例的範圍。事實上,為了簡潔起見,可以不詳細描述系統之習用的製造、連接、準備和其他功能方面。進一步而言,多樣圖中所示的連接線打算代表多樣元件之間的範例性功能關係和/或實體耦合。許多替代性或附加性功能關係或實體連接可以出現在實際的系統中,以及/或者可以不存在於某些實施例中。
要了解在此所述的組態和/或做法在本質上是範例性的,並且這些特定的實施例或範例不是要視為有限制的意味,因為可能有許多的變化。在此所述的特定常規或方法可以代表任何數目之處理策略中的一或更多者。因此,示範的多樣動作可以採取示範的順序來進行、以其他的順
序來進行、或於某些情形下有所省略。
本揭示的主題包括在此揭示之多樣過程、系統、組態和其他特色、功能、動作和/或性質的所有新穎和非顯而易知的組合與次組合及其任何和所有的等同者。
100‧‧‧反應系統
105‧‧‧反應區域
110‧‧‧基板裝載區域
115‧‧‧底板
115A‧‧‧下表面
120‧‧‧反應區域殼罩
125‧‧‧反應物分布系統
130‧‧‧基板裝載殼罩
135‧‧‧基板
140‧‧‧承載體
140A‧‧‧下表面
140B‧‧‧徑向表面
140C‧‧‧上表面
145‧‧‧移動元件
150‧‧‧舉升栓
160‧‧‧承載體磁鐵
170‧‧‧底板磁鐵
Claims (20)
- 一種用於處理基板的反應系統,其包括:承載體,其建構成握持基板;反應區域的底板,當該基板移動到該反應區域裡時,該底板圍繞該承載體;至少一承載體磁鐵,其嵌在該承載體裡;以及至少一底板磁鐵,其嵌在該底板裡;其中該至少一承載體磁鐵和該至少一底板磁鐵的交互作用生成排斥力以維持該承載體和該底板之間的間隙。
- 如申請專利範圍第1項的反應系統,其中該至少一承載體磁鐵包括以下至少一材料:釤鈷和銣。
- 如申請專利範圍第1項的反應系統,其中該至少一承載體磁鐵包括能夠承受高溫的磁性材料。
- 如申請專利範圍第1項的反應系統,其中該至少一底板磁鐵包括以下至少一材料:釤鈷和銣。
- 如申請專利範圍第1項的反應系統,其中該至少一底板磁鐵包括能夠承受高溫的磁性材料。
- 如申請專利範圍第1到5項中任一項的反應系統,其進一步包括:監視系統,其建構成追蹤該該承載體和該底板之間該間隙的尺寸。
- 如申請專利範圍第6項的反應系統,其中該監視系統包括力測量計。
- 如申請專利範圍第1到5項中任一項的反應系統,其中該承載體建構成連續旋轉。
- 如申請專利範圍第1到5項中任一項的反應系統,其中該至少一承載體磁鐵包括徑向隔開的二承載體磁鐵。
- 如申請專利範圍第1到5項中任一項的反應系統,其中該至少一承載體磁鐵包括:第一承載體磁鐵,其面對著該至少一底板磁鐵的正極;以及第二承載體磁鐵,其面對著該至少一底板磁鐵的負極。
- 如申請專利範圍第1到5項中任一項的反應系統,其中該至少一承載體磁鐵包括嵌在該承載體裡的環形磁鐵。
- 如申請專利範圍第9項的反應系統,其中該等二承載體磁鐵包括嵌在該承載體裡的環形磁鐵。
- 如申請專利範圍第1到5項中任一項的反應系統,其中該至少一承載體磁鐵和該至少一底板磁鐵配置在第一承載體表面的斜對角。
- 一種用於處理基板的反應系統,其包括:反應區域;基板裝載區域;承載體,其建構成握持基板;移動元件,其使該承載體和該基板在該基板裝載區域和該反應區域之間移動;反應物分布系統,其在該反應區域裡以將至少一反應物通往該基板上;該反應區域的底板,該底板在該承載體的周邊與該承載體交互作用;第一承載體磁鐵,其嵌在該承載體裡;以及第一底板磁鐵,其嵌在該底板裡;其中該第一承載體磁鐵和該第一底板磁鐵的交互作用產生第一排斥力 以維持該承載體和該底板之間的第一間隙。
- 如申請專利範圍第14項的反應系統,其中該第一承載體磁鐵和該第一底板磁鐵包括以下至少一材料:釤鈷和銣。
- 如申請專利範圍第14或15項的反應系統,其進一步包括:第二承載體磁鐵,其嵌在該承載體裡。
- 如申請專利範圍第14或15項的反應系統,其中該第二承載體磁鐵和該第一底板磁鐵的交互作用產生第二排斥力以維持該承載體和該底板之間的第二間隙。
- 如申請專利範圍第14或15項的反應系統,其中該至少第一承載體磁鐵和該第一底板磁鐵配置在該第一承載體表面的斜對角。
- 一種用於處理基板的承載體總成,其包括:第一水平表面,其建構成握持基板;第二水平表面,其與該第一水平表面分開;徑向表面,其配置在該第一水平表面和該第二水平表面之間;以及第一承載體磁鐵,其嵌在該第二水平表面裡;其中該第一承載體磁鐵建構成與嵌在底板裡的底板磁鐵交互作用,藉此產生第一排斥力以維持該承載體和該底板之間的間隙。
- 一種底板總成,其包括:底板,其建構成安裝於反應系統中;該底板的水平表面;該底板的徑向表面,其建構成直徑大於承載體;以及底板磁鐵,其嵌在該底板裡; 其中該底板磁鐵建構成與嵌在該承載體裡的承載體磁鐵交互作用,藉此產生第一排斥力以維持該承載體和該底板之間的間隙。
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2015
- 2015-07-07 US US14/793,323 patent/US10600673B2/en active Active
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2016
- 2016-04-21 TW TW105112363A patent/TWI684227B/zh active
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Publication number | Publication date |
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US20170011950A1 (en) | 2017-01-12 |
KR20170006274A (ko) | 2017-01-17 |
KR102625920B1 (ko) | 2024-01-16 |
TWI684227B (zh) | 2020-02-01 |
US10600673B2 (en) | 2020-03-24 |
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