TW201310574A - 晶圓支撐裝置及其製造方法 - Google Patents

晶圓支撐裝置及其製造方法 Download PDF

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TW201310574A
TW201310574A TW101124745A TW101124745A TW201310574A TW 201310574 A TW201310574 A TW 201310574A TW 101124745 A TW101124745 A TW 101124745A TW 101124745 A TW101124745 A TW 101124745A TW 201310574 A TW201310574 A TW 201310574A
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protrusions
support device
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Fumitaka Shoji
Hideaki Fukuda
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract

本發明揭示一種用於支撐一晶圓於其上的晶圓支撐裝置，其適於安裝在一半導體處理設備中，該晶圓支撐裝置包括：一基底表面；及突出物，其從該基底表面突出且具有用於支撐一晶圓於其上的圓頭尖端。該等圓頭尖端係致使一晶圓之一反面完全利用該等圓頭尖端以點接觸來支撐。該等突出物實質上均勻布置在該基底表面上放置一晶圓的區域上，其中在使用中決定之該等突出物的數目(N)及高度(H[μm])符合以下針對300-mm晶圓之每面積的不等式：(-0.5N+40)≦H≦53；5≦N≦100。

Description

晶圓支撐裝置及其製造方法
本發明一般有關於一種安裝於半導體處理室中的晶圓支撐裝置，尤其有關於一種具有用於支撐一晶圓於其上之突出物的晶圓支撐裝置。
一典型習知承載盤具有平坦表面，如圖1A所示。晶圓支撐裝置1適於附接至通常包括加熱器的承載盤基底。晶圓放置在晶圓支撐裝置上，以通常利用電漿增強CVD或ALD進行處理。如圖1A所示(上方圖式為平面圖，及下方圖式為沿著直線1A-1A截取的截面圖)，晶圓支撐裝置具有平坦表面。然而，在將晶圓放置在平坦表面上及進行處理時，通常在薄膜形成後，在晶圓的反面上觀察到顆粒的產生及堆積。此外，取決於處理類型，通常將晶圓反面黏在晶圓支撐裝置的頂面上。為了解決上述問題，習知開發有兩種類型的晶圓支撐裝置。圖1B(上方圖式為平面圖，及下方圖式為沿著直線1B-1B截取的截面圖)圖解凸起型晶圓支撐裝置2，其具有以連續基底表面隔離的凸面部分3。圖1C(上方圖式為平面圖，及下方圖式為沿著直線1C-1C截取的截面圖)圖解凹陷型晶圓支撐裝置4，其具有以連續基底表面隔離的凹面部分5。雖然圖1B顯示的凸面部分從上方觀看時為正方形，但其亦可為圓形。同樣地，雖然圖1C顯示的凹面部分從上方觀看時為圓形，但其亦可為正方形。
為了減少在薄膜形成期間在晶圓反面上產生及依附的顆粒數目，一般有效的做法是減少在晶圓反面及承載盤頂面 之間的接觸面積。然而，即使使用凸起型或凹陷型晶圓支撐裝置，還是會有顆粒在晶圓反面上產生及堆積的問題。此外，晶圓支撐裝置的凸面或凹面部分也會影響薄膜厚度的均勻性及薄膜性質。
在本揭示內容中包括先前技術中涉及的任何問題討論及解決方案只是為了提供本發明的來龍去脈，不應將其視為認可在本發明形成時已知任何或所有討論。
因此，在一方面中，本發明之目的係提供一種承載盤頂面，其可減少在薄膜形成期間依附於晶圓反面的顆粒數目，並亦可改良薄膜厚度的均勻性及薄膜性質。由於在晶圓反面上觀察到顆粒，其中晶圓反面及晶圓支撐裝置頂面在薄膜形成期間彼此接觸，在一些具體實施例中，為了減少在晶圓反面及晶圓支撐裝置頂面之間的接觸面積，在晶圓支撐裝置的基底表面上提供具有圓頭尖端的突出物，以減少接觸面積。在上文中，減少突出物數目將有效減少在晶圓反面及晶圓支撐裝置頂面之間的接觸點數目。然而，當突出物數目較少時，取決於處理類型，晶圓容易在接觸點之間發生些許下彎或變形(即使其程度不大)，因而接觸承載盤頂面及使顆粒在晶圓反面上的產生及堆積增加。在上文中，即使因增加突出物的高度使晶圓發生些許下彎或變形，仍可抑制在晶圓反面及晶圓支撐裝置頂面之間的接觸。然而，當突出物的高度增加時，薄膜應力容易受損。
有鑑於上文，在一些具體實施例中，藉由使用具有圓頭 尖端的突出物及使用突出物的數目及高度作為控制參數，設計晶圓支撐裝置，竟出人意料可減少顆粒在晶圓反面上的堆積及改良薄膜性質(諸如薄膜應力及薄膜厚度的均勻性)。
一些具體實施例提供一種用於支撐一晶圓於其上的晶圓支撐裝置，其適於安裝在一半導體處理設備中，該晶圓支撐裝置包含：(i)一基底表面；及(ii)突出物，其從該基底表面突出且具有用於支撐一晶圓於其上的圓頭尖端，該等圓頭尖端係致使一晶圓之一反面完全利用該等圓頭尖端以點接觸來支撐，該等突出物實質上均勻布置在該基底表面上放置一晶圓的區域上，其中在使用中決定之該等突出物的數目(N)及高度(H[μm])符合以下針對一300-mm晶圓之每面積的不等式：(-0.5N+40)H53；5N100。
在另一方面中，一些具體實施例提供一種用於製造一晶圓支撐裝置的方法，該晶圓支撐裝置用於支撐一晶圓於其上且適於安裝在一半導體處理設備中，該方法包含：(I)提供具有一基底表面的一晶圓支撐裝置；(II)使用針對一300-mm晶圓之每面積的以下不等式設計突出物；及(III)製造具有所設計突出物之一晶圓支撐裝置：(-0.5N+40)H53；5N100；其中N及H分別為在使用中決定之該等突出物的數目 及高度([μm])，該等突出物從該基底表面突出及具有用於支撐一晶圓於其上的圓頭尖端，該等圓頭尖端係致使一晶圓之一反面完全利用該等圓頭尖端以點接觸來支撐，該等突出物實質上均勻布置在該基底表面上放置一晶圓的區域上。
為了概述本發明各方面及勝於先前技術所達成的優點，在本揭示內容中說明本發明之目的及優點。當然，應瞭解，未必所有此類目的或優點可根據本發明任何特定具體實施例而達成。因此，例如，熟習本技術者應明白，可在未必達成如本文教示或建議的其他目的或優點的情形下，以達成或最佳化如本文教示之一個優點或一組優點的方式體現或實行本發明。
本發明的更多方面、特徵及優點將從以下的「實施方式」變得顯而易見。
在本揭示內容中，「實質上均等」、「實質上均勻」、或類似物可以指熟習本技術者所知諸如小於10%、小於5%、小於1%、或其任何範圍之差異的差異。在本揭示內容中，「點接觸」可以指兩個相異物體理論上一開始彼此碰觸的剛性表面，或實質上在至少一個表面為彎曲的一點處彼此碰觸的剛性表面，或指直徑可為約50 μm或以下或直徑約20 μm或以下的接觸面積。在本揭示內容中，在一些具體實施例中，任何已定義的意義未必排除尋常及慣常的意義。在其中未指定條件及/或結構的本揭示內容中，熟習本技術者可以考慮到本揭示內容，在例行實驗上隨時提供此類條件及/或結 構。還有，在本揭示內容中，在特定具體實施例中應用的數目可在其他具體實施例中修改至少±50%的範圍，及在這些具體實施例中應用的範圍可包括或排除邊界點。
如上文說明，在一些具體實施例中，一種用於支撐一晶圓於其上的晶圓支撐裝置適於安裝在半導體處理設備中，該晶圓支撐裝置包含：(i)一基底表面；及(ii)多個突出物，其從該基底表面突出且具有用於支撐一晶圓於其上的圓頭尖端，該等圓頭尖端係致使一晶圓之一反面完全利用該等圓頭尖端以點接觸來支撐，該等突出物實質上均勻布置在該基底表面上放置一晶圓的區域上，其中在使用中決定之該等突出物的數目(N)及高度(H[μm])符合以下針對一300-mm晶圓之每面積的不等式：(-0.5N+40)H53；5N100。圖17為圖解以上關係的曲線圖，其中灰色區域代表顯著改良薄膜性質及顆粒堆積的範圍。在一些具體實施例中，H不超過約50 μm。
高度(H)係定義為通常在晶圓支撐裝置在使用中時，即，在處理腔室中放置在晶圓支撐裝置中的晶圓時，從基底表面的頂部平面(參考平面)至突出物最高點的距離(無論突出物周圍是否有凹處)。在一些具體實施例中，當使用陶瓷球或合金球構成突出物時，由於陶瓷球及包括基底表面之材料之間的熱膨脹差異，當使用晶圓支撐裝置以如約400℃的溫度處理晶圓時，與處理前的突出物高度相比，突出物的高度減少如約10 μm。在一些具體實施例中，當H'係定義為晶圓支撐裝置不在使用中時的突出物高度時，符合不等式(-0.5N+50)<H'<65；5<N<100。在一些具體實施例中，當使用陶瓷球或合金球構成突出物時，H=(H'-10 μm)。在 一些具體實施例中，H'至少為(-0.5N+52.3)，且不超過60 μm。當突出物藉由機械研磨晶圓支撐裝置的材料表面形成時，由於沒有熱膨脹差異的問題，晶圓支撐裝置在使用中的突出物高度實質上與晶圓支撐裝置不在使用中的突出物高度相同，即，H=H'。
當使用陶瓷球或合金球構成突出物時，可從H'(在室溫下不在使用中的高度)決定H(在處理溫度下在使用中的高度)如下：在晶圓支撐裝置從室溫T0加熱至T1時，在基底表面中容納球於其中之空隙或凹處的深度增加A：A=CTE(M)x D(M)x(T1-T0)
其中CTE(M)是晶圓支撐裝置基底材料的線性熱膨脹係數，及D(M)是空隙或凹處的直徑。
同樣地，當球從室溫T0以T1加熱時，球的直徑增加B：B=CTE(B)x D(B)x(T1-T0)
其中CTE(B)是球的線性熱膨脹係數，及D(B)是球的直徑。因此：H=H'-(A-B)
例如，當球以藍寶石(CTE(B)=7E-6)製成，基底材料為鋁合金6061(CTE(M)=23E-6)時，球及空隙或凹處的直徑為0.002 m(D(B)=D(M)=0.002)，及T1為400(T1=400℃，T0=25℃)，可計算(A-B)的值為12.0E-6[m]下。當球及空隙或凹處的直徑在上文的相同條件下為0.004 m (D(B)=D(M)=0.004)時，可計算(A-B)的值為24.0E-6[m]下。
在一些具體實施例中，N為約20至約40的整數。在一些具體實施例中，N為21或以上，但小於60。根據這些組態，使用晶圓支撐裝置以TEOS形成的薄膜(諸如氧化矽薄膜)具有穩定的應力(可將晶圓間之薄膜應力偏差抑制在如約20 MPa或約10 MPa內)，及依附在晶圓反面上的顆粒數目可針對300-mm晶圓之每面積減少至約400或以下或約200或以下。在一些具體實施例中，晶圓支撐裝置不包括加熱元件或離散電極，或不具有電夾盤所需或充當電夾盤的任何結構。在一些具體實施例中，晶圓支撐裝置包括加熱元件及/或離散電極，且沒有電夾盤所需或充當電夾盤的任何結構。
在一些具體實施例中，由於晶圓反面及突出物的圓頭尖端以點接觸彼此碰觸，其間的初始接觸面積(在薄膜形成前)極小，如，相對於晶圓反面之面積之10-6%至10-3%(在一些具體實施例中，10-5%至10-4%)的範圍。
在一些具體實施例中，布置在基底表面之直徑線上的突出物以實質上均等的間隔配置。在一些具體實施例中，突出物以幾何配置布置在基底表面上，致使突出物之每一者構成由突出物形成之相同正方形或相同正三角形之各者的一點。或者，在一些具體實施例中，突出物係同心地布置。或者，在一些具體實施例中，突出物以幾何配置布置在基底表面上，致使突出物之每一者構成由突出物形成之相同正六邊形之各者的一點。在一些具體實施例中，可以任何組合在單一基底表面上使用任何前述組態。
在一些具體實施例中，以嵌入基底表面中的陶瓷球形成突出物。在一些具體實施例中，陶瓷球以藍寶石製成。在一些具體實施例中，陶瓷球以鋁土、其他氧化鋁、氮化鋁、氮化鎂、碳化矽、或類似物製成。在一些具體實施例中，突出物由圓頂形陶瓷形成。在一些具體實施例中，可使用不鏽鋼、鋁合金、鈦合金、或類似物。在一些具體實施例中，圓頭尖端具有半徑約1 mm至約2 mm。在一些具體實施例中，陶瓷球具有直徑約2 mm至約4 mm。
在一些具體實施例中，突出物由與基底表面之材料相同的材料形成。基底表面可以鋁、陽極氧化鋁、鋁合金、或類似物製成。
在一些具體實施例中，除了支撐晶圓的突出物以外，在基底表面上不提供其他突出物。在一些具體實施例中，基底表面除了突出物以外，沒有任何階梯、間隔物、或邊緣，或沒有任何夾緊機構。在一些具體實施例中，晶圓主要或實質上利用重力放置在突出物上。
本發明之另一方面提供一種半導體處理設備，包含：(I)一反應室，其能夠被抽空；(II)一承載盤，其包括任何前述晶圓支撐裝置及一加熱組，該承載盤安裝在該反應室內；及(III)一噴淋頭，其與該承載盤平行安裝在該反應室內。在一些具體實施例中，使用晶圓支撐裝置作為CVD設備(包括電漿或熱CVD設備)、ALD設備(包括電漿或熱ALD設備)、或蝕刻設備中的承載盤。在一些具體實施例中，半導體處理設備另外包含RF電源，其中承載盤及噴淋頭充當產生電漿的上電極及下電極。
在又另一方面中，本發明提供一種用於製造一晶圓支撐裝置的方法，該晶圓支撐裝置用於支撐一晶圓於其上且適於安裝在一半導體處理設備中，該方法包含：(a)提供具有一基底表面的一晶圓支撐裝置；(b)使用針對一300-mm晶圓之每面積的以下不等式設計突出物；及(c)製造具有所設計突出物之一晶圓支撐裝置：(-0.5N+40)H53；5N100；其中N及H分別為在使用中決定之該等突出物的數目及高度([μm])，該等突出物從該基底表面突出及具有用於支撐一晶圓於其上的圓頭尖端，該等圓頭尖端係致使一晶圓之一反面完全利用該等圓頭尖端以點接觸來支撐，該等突出物實質上均勻布置在該基底表面上放置一晶圓的區域上。
在一些具體實施例中，不等式為：(-0.5N+X)<H<Y；5<N<100，其中在任何組合中，X=40.5、41、42、43、44、或45，及Y=47、48、49、50、51、或52。在一些具體實施例中，N為約20至約40的整數。在一些具體實施例中，N為21或以上，但小於60。
本發明將參考並非用來限制本發明的具體實施例及圖式進行詳細解說。
圖2A是根據本發明之一具體實施例之晶圓支撐裝置10的示意圖，其中上方圖式為俯視圖，中間圖式為根據一具體實施例沿著直線2A-2A截取的截面圖，而下方圖式為根據另一具體實施例沿著直線2A-2A截取的截面圖。在此具體實施例中，突出物11、11'以幾何配置布置遍及基底表面，致使突出物之每一者構成突出物所形成之相同正方形之各者的一點。布置在基底表面之直徑線(2A-2A)上的突出物 11、11'以實質上均等的間隔配置。突出物11為嵌入基底表面中的陶瓷球，而突出物11'則以與基底表面之材料相同的材料形成。陶瓷球11可藉由填隙而嵌入基底表面中。例如，可使用JP 2007-180246中揭示的填隙方法，其揭示內容全文以提及方式併入本文中。突出物11'可如藉由機械研磨而形成。圖2B所示晶圓支撐裝置12及突出物13、與圖2A所示類似，只是圖2A中突出物11、11'的數目是21，圖2B中突出物13、的數目則是37。
圖2D所示晶圓支撐裝置16及突出物17、17'與圖2A所示類似，只是圖2A中突出物11、11'的數目是21，圖2D中突出物17、17'的數目是22，及突出物17、17'以幾何配置布置遍及基底表面，致使突出物之每一者構成突出物所形成相同正三角形之各者的一點。在圖2D所示組態中，在所有兩個相鄰突出物之間的距離相同，使得這些突出物可更平均地支撐晶圓，而不會造成下彎。
圖2E所示晶圓支撐裝置18及突出物19、19'與圖2A所示類似，只是突出物19、19'是同心地布置(圖2E中突出物19、19'的數目與圖2A中的相同，均為21)。
圖2C所示晶圓支撐裝置14及突出物15、15'與圖2A所示類似，只是圖2A中突出物11、11'的數目是21，圖2C中突出物15、15'的數目是54，及突出物15、15'以幾何配置布置遍及基底表面，致使突出物之每一者構成突出物所形成相同正六邊形之各者的一點。還有，布置在基底表面之直徑線上的突出物15、15'並非以均等的間隔配置，而是以兩個不同的間隔配置(以較長間隔及較短間隔交替配置)。
圖13根據本發明之一具體實施例，為具備晶圓支撐裝置之半導體處理設備的示意圖。在反應室111中，承載盤頂板101包括能夠上下移動的加熱元件。噴淋頭102平行布置在晶圓支撐裝置101上方。噴淋頭102及晶圓支撐裝置101為電容式耦合並充當上電極及下電極。RF電源105供應RF功率給噴淋頭102，及晶圓支撐裝置係接地。前驅物經由具備閥門103的管線108供應至噴淋頭102，而反應物或其他氣體則經由具備閥門104的管線109供應至噴淋頭102。反應室具有排氣系統(未顯示)。
範例 比較範例1
使用圖13所示半導體處理設備在300-mm晶圓上使用TEOS沈積厚度約350 nm的氧化矽薄膜；在該半導體處理設備中，安裝具有17個同心分布之柱狀突出物(直徑1.0 mm)的晶圓支撐裝置(以鋁合金製成)，其高度(H')為50 μm(由於突出物以機械形成，故決定使用中高度(H)與非使用中高度(H')相同)。在薄膜形成後，觀察晶圓的反面。圖3為在薄膜形成後，晶圓反面之刮傷部分之缺陷再檢測SEM(掃描電子顯微鏡)的影像。如圖3所示，一般在突出物尖端所在的區域中觀察到許多較大刮痕的區域，其中一些區域具有1 mm或以上的長度及50-100 μm的寬度。此外，如圖6所示，其為晶圓反面在薄膜形成後的顆粒圖(利用晶圓表面檢驗系統)，其中亮點指示顆粒的黏著，觀察到顆粒堆積，其中觀察到247個直徑0.2 μm或以上的顆粒。
範例1
以比較範例1的相同方式在晶圓上執行薄膜形成，但是使用圖2B所示晶圓支撐裝置(37個突出物)，其使用直徑2 mm及高度(H')50 μm(H=38 μm)的藍寶石球。由於鋁合金本體及藍寶石球之間的熱膨脹係數差異，決定使用中高度(H)比非使用中高度(H')短約12 μm，其計算如下：A=CTE(M)(23E-6：鋁合金6061)x D(M)(0.002 m)x(T1-T0)(T1=390℃，T0=25℃)=17.0E-6 m
B=CTE(B)(7E-6：鋁合金6061)x D(M)(0.002 m)x(T1-T0)(T1=390℃，T0=25℃)=5.18E-6 m
A-B=11.8E-6 m
H=H'-11.8[μm](12 μm)。
圖4為晶圓反面在薄膜形成後之刮傷部分之缺陷再檢測SEM(掃描電子顯微鏡)的影像。圖5為晶圓反面在薄膜形成後之圓形變形部分之缺陷再檢測SEM(掃描電子顯微鏡)的影像。如圖4及5所示，雖然觀察到刮痕及圓形變形部分，但其均非常小且局限於直徑約20 μm至約30 μm之範圍的小區域中。此外，如圖7所示，其為晶圓反面在薄膜形成後的顆粒圖(利用晶圓表面檢驗系統)，其中亮點指示顆粒的黏著，與比較範例1相比，觀察到顯著較少的顆粒堆積，其中觀察到112個直徑0.2 μm或以上的顆粒。
範例2
以範例1的相同方式在晶圓上執行薄膜形成，但是使用圖2A所示的晶圓支撐裝置(21個突出物)，其使用直徑2 mm的藍寶石球，及使用圖2B所示的晶圓支撐裝置(37個突出 物)，其使用直徑2 mm的藍寶石球，及這些晶圓支撐裝置的高度(H')改變如8圖所示，及測量薄膜的薄膜應力(由於鋁合金本體及藍寶石球之間的熱膨脹係數差異，故決定使用中高度(H)比非使用中高度(H')短約12 μm)。圖8根據此具體實施例，為圖解在薄膜應力及突出物高度(H')之間的關係的曲線圖。應力是七個薄膜的平均數，及使用圖2A所示晶圓支撐裝置獲得高度(H')為40 μm或以下時的資料，及使用圖2B所示晶圓支撐裝置獲得高度(H')超過40 μm時的資料。如圖8所示，當突出物的高度(H')小於約60 μm或約65 μm(H<約48或53 μm)時，薄膜應力的偏差可減少在約10 MPa以內。
範例3
以範例1的相同方式在晶圓上執行薄膜形成，但是使用圖2A所示的晶圓支撐裝置(21個突出物)，其使用直徑2 mm的藍寶石球，及使用圖2B所示的晶圓支撐裝置(37個突出物)，其使用直徑2 mm的藍寶石球，及這些晶圓支撐裝置的高度(H')改變如圖9所示，及測量晶圓反面上的顆粒數目。圖9根據此具體實施例，為圖解在晶圓反面上的顆粒數目及突出物高度(H')之間的關係的曲線圖。顆粒的數目是三個晶圓的平均數。如圖9所示，當圖2A所示突出物(21個突出物)的高度(H')小於約40 μm(H<約28 μm)時，可將直徑0.2 μm或以上的顆粒數目控制在約500以下，及當突出物(21個突出物)的高度(H')超過約40 μm(H>約28 μm)時，可將直徑0.2 μm或以上的顆粒數目控制在約300以下，而當圖2B所示突出物(37個突出物)的高度(H')超過30 μm(H>約18 μm)時，可將直徑0.2 μm或以上的顆粒數目控制在約300以 下。對於圖2A所示的突出物(21個突出物)及圖2B所示的突出物(37個突出物)，預期當突出物的高度(H')約50 μm或以上(H約38 μm)時，可將顆粒數目減少小於約200。
圖14為在使用具有21個高度(H')為10 μm(H0 μm)的球體頂部突出物的晶圓支撐裝置的薄膜形成後，晶圓反面的顆粒圖(利用晶圓表面檢驗系統)，其中亮點指示顆粒的黏著(作為比較範例)。當使用藍寶石球時，決定使用中高度(H)比非使用中高度(H')短約12 μm，及因此，決定12 μm的高度(H')幾乎為完全接觸。圖15為在使用具有21個高度(H')為30 μm(H=18 μm)的球體頂部突出物的晶圓支撐裝置的薄膜形成後，晶圓反面的顆粒圖(利用晶圓表面檢驗系統)，其中亮點指示顆粒的黏著(作為比較範例)。圖16為在使用具有21個高度(H')為32 μm(H=20 μm)的球體頂部突出物的晶圓支撐裝置的薄膜形成後，晶圓反面的顆粒圖(利用晶圓表面檢驗系統)，其中亮點指示顆粒的黏著(作為比較範例)。對於具有21個突出物(藍寶石球)的晶圓支撐裝置，當高度(H')為32 μm或以下(H20 μm)時，展現出在薄膜形成期間，晶圓反面因下彎而在突出物(在突出物周圍有較少的顆粒)之間的區域中接觸晶圓支撐裝置的基底表面，因而增加晶圓反面上的顆粒堆積。
參考範例1
以比較範例1的相同方式在晶圓上執行薄膜形成，但是改變突出物的高度。圖11為圖解在薄膜厚度均勻性及突出物高度之間的關係的曲線圖。圖12為圖解在薄膜應力及突出物厚度之間的關係的曲線圖。由於突出物以機械形成，決 定使用中高度(H)與非使用中高度(H')相同。如圖11及12所示，當突出物的高度超過約60 μm時，不僅損及薄膜應力，而且損及薄膜厚度的均勻性。圖12對應於圖8，及因此，預期亦在使用具有球體頂部突出物的晶圓支撐裝置時，當突出物的高度超過約60 μm時，將損及薄膜厚度的均勻性。
突出物數目及高度之間的關係
透過實驗，可決定平均而言，每個突出物產生兩個直徑0.2 μm或以上及依附於晶圓反面的顆粒。因此，當突出物的數目不超過約100時，預期顆粒的數目不超過約200。此外，當突出物的數目增加時，製造晶圓支撐裝置的成本亦增加。有鑑於上文及前述範例，圖10為圖解顯著改良薄膜應力及顆粒數目之突出物高度(H')及突出物數目之間的關係的曲線圖。在圖10中「N/G」表示不佳或很差，「OK」表示可接受或令人滿意，「Gray」表示在不佳及可接受之間的範圍，及「OK B/L」表示可接受的界線。
熟習本技術者應瞭解，在不脫離本發明之精神下，可進行許多及各種修改。因此，應清楚瞭解，本發明的形式僅為說明性且無意用來限制本發明的範疇。
1‧‧‧晶圓支撐裝置
2‧‧‧凸起型晶圓支撐裝置
3‧‧‧凸面部分
4‧‧‧凹陷型晶圓支撐裝置
5‧‧‧凹面部分
10‧‧‧晶圓支撐裝置
11、11'‧‧‧突出物
12‧‧‧晶圓支撐裝置
13、13'‧‧‧突出物
14‧‧‧晶圓支撐裝置
15、15'‧‧‧突出物
16‧‧‧晶圓支撐裝置
17、17'‧‧‧突出物
18‧‧‧晶圓支撐裝置
19、19'‧‧‧突出物
101‧‧‧承載盤頂板/晶圓支撐裝置
102‧‧‧噴淋頭
103‧‧‧閥門
104‧‧‧閥門
105‧‧‧RF電源
108‧‧‧管線
109‧‧‧管線
111‧‧‧反應室
本發明的以上及其他特徵將參考較佳具體實施例的圖式來說明，這些圖式係用來圖解而非限制本發明。這些圖式為了圖解已大幅簡化且未按比例繪製。
圖1A是習知晶圓支撐裝置的示意圖，其中上方圖式為 平面圖，及下方圖式為沿著直線1A-1A截取的截面圖。
圖1B是習知晶圓支撐裝置的示意圖，其中上方圖式為平面圖，及下方圖式為沿著直線1B-1B截取的截面圖。
圖1C是習知晶圓支撐裝置的示意圖，其中上方圖式為平面圖，及下方圖式為沿著直線1C-1C截取的截面圖。
圖2A是根據本發明之一具體實施例之晶圓支撐裝置的示意圖，其中上方圖式為俯視圖，中間圖式為根據一具體實施例沿著直線2A-2A截取的截面圖，而下方圖式為根據另一具體實施例沿著直線2A-2A截取的截面圖。
圖2B是根據本發明之另一具體實施例之晶圓支撐裝置的示意圖，其中上方圖式為俯視圖，中間圖式為根據一具體實施例沿著直線2B-2B截取的截面圖，而下方圖式為根據另一具體實施例沿著直線2B-2B截取的截面圖。
圖2C是根據本發明之又另一具體實施例之晶圓支撐裝置的示意圖，其中上方圖式為俯視圖，中間圖式為根據一具體實施例沿著直線2C-2C截取的截面圖，而下方圖式為根據另一具體實施例沿著直線2C-2C截取的截面圖。
圖2D是根據本發明之再另一具體實施例之晶圓支撐裝置的示意圖，其中上方圖式為俯視圖，中間圖式為根據一具體實施例沿著直線2D-2D截取的截面圖，而下方圖式為根據另一具體實施例沿著直線2D-2D截取的截面圖。
圖2E是根據本發明之一不同具體實施例之晶圓支撐裝置的示意圖，其中上方圖式為俯視圖，中間圖式為根據一具體實施例沿著直線2E-2E截取的截面圖，而下方圖式為根據另一具體實施例沿著直線2E-2E截取的截面圖。
圖3為在使用具有直徑1 mm之柱狀突出物的晶圓支撐裝置的薄膜形成後，晶圓反面之刮傷部分之缺陷再檢測SEM(掃描電子顯微鏡)的影像(作為比較範例)。
圖4根據本發明之一具體實施例，為在使用具有球體頂部突出物(其中嵌入直徑2 mm的球體)的晶圓支撐裝置的薄膜形成後，晶圓反面之刮傷部分之缺陷再檢測SEM(掃描電子顯微鏡)的影像。
圖5根據本發明之一具體實施例，為在使用具有球體頂部突出物(其中嵌入直徑2 mm的球體)的晶圓支撐裝置的薄膜形成後，晶圓反面之圓形變形部分之缺陷再檢測SEM(掃描電子顯微鏡)的影像。
圖6為在使用具有直徑1 mm及高度30 μm之柱狀突出物的晶圓支撐裝置的薄膜形成後，晶圓反面的顆粒圖(利用晶圓表面檢驗系統)，其中亮點指示顆粒的黏著(作為比較範例)。
圖7根據本發明之一具體實施例，為在使用具有高度50 μm之球體頂部突出物(其中嵌入直徑2 mm的球體)的晶圓支撐裝置的薄膜形成後，晶圓反面的顆粒圖(利用晶圓表面檢驗系統)，其中亮點指示顆粒的黏著。
圖8根據本發明具體實施例，為圖解在薄膜應力及突出物高度之間的關係的曲線圖。
圖9根據本發明具體實施例，為圖解在晶圓反面上的顆粒數目及突出物高度之間的關係的曲線圖。
圖10根據本發明具體實施例，為針對薄膜應力及顆粒數目，圖解在突出物高度及突出物數目之間的關係的曲線 圖。
圖11為圖解在薄膜厚度均勻性及突出物高度之間的關係的曲線圖(作為參考範例)。
圖12為圖解在薄膜應力及突出物高度之間的關係的曲線圖(作為參考範例)。
圖13根據本發明之一具體實施例，為具備晶圓支撐裝置之半導體處理設備的示意圖。
圖14為在使用具有高度10 μm之球體頂部突出物(其中嵌入直徑2 mm的球體)的晶圓支撐裝置的薄膜形成後，晶圓反面的顆粒圖(利用晶圓表面檢驗系統)，其中亮點指示顆粒的黏著(作為比較範例)。
圖15為在使用具有高度30 μm之球體頂部突出物(其中嵌入直徑2 mm的球體)的晶圓支撐裝置的薄膜形成後，晶圓反面的顆粒圖(利用晶圓表面檢驗系統)，其中亮點指示顆粒的黏著(作為比較範例)。
圖16為在使用具有高度32 μm之球體頂部突出物(其中嵌入直徑2 mm的球體)的晶圓支撐裝置的薄膜形成後，晶圓反面的顆粒圖(利用晶圓表面檢驗系統)，其中亮點指示顆粒的黏著(作為比較範例)。
圖17根據本發明具體實施例，為圖解在突出物高度H[μm]及突出物數目(N)之間的關係的曲線圖，其中灰色區域代表顯著改良薄膜性質及顆粒堆積的範圍。
10‧‧‧晶圓支撐裝置
11、11'‧‧‧突出物
12‧‧‧晶圓支撐裝置
13、13'‧‧‧突出物
14‧‧‧晶圓支撐裝置
15、15'‧‧‧突出物
16‧‧‧晶圓支撐裝置
17、17'‧‧‧突出物
18‧‧‧晶圓支撐裝置
19、19'‧‧‧突出物

Claims (16)

  1. 一種用於支撐一晶圓於其上的晶圓支撐裝置，其適於安裝在一半導體處理設備中，該晶圓支撐裝置包含：一基底表面；及多個突出物，其從該基底表面突出且具有用於支撐一晶圓於其上的多個圓頭尖端，該等圓頭尖端係致使一晶圓之一反面全面地利用該等圓頭尖端以點接觸來支撐，該等突出物實質上均勻地布置在該基底表面上所放置一晶圓的區域上，其中在使用中決定之該等突出物的數目(N)及高度(H[μm])符合以下針對一300-mm晶圓之每面積的不等式：(-0.5N+40)H53；5N100。
  2. 如申請專利範圍第1項所述之晶圓支撐裝置，其中布置在該基底表面之一直徑線上的該等突出物以實質上均等的間隔配置。
  3. 如申請專利範圍第2項所述之晶圓支撐裝置，其中該等突出物以幾何配置布置於該基底表面上，致使該等突出物之每一者構成由該等突出物形成之相同正方形或相同正三角形之各者之一點。
  4. 如申請專利範圍第2項所述之晶圓支撐裝置，其中該等突出物同心地布置。
  5. 如申請專利範圍第1項所述之晶圓支撐裝置，其中該等突出物以幾何配置布置於該基底表面上，致使該等突出物之 每一者構成由該等突出物形成之相同正六邊形之各者之一點。
  6. 如申請專利範圍第1項所述之晶圓支撐裝置，其中該等突出物由嵌入該基底表面中的陶瓷球形成。
  7. 如申請專利範圍第1項所述之晶圓支撐裝置，其中該等突出物由圓頂形陶瓷形成。
  8. 如申請專利範圍第1項所述之晶圓支撐裝置，其中該等突出物由與該基底表面之材料相同的材料形成。
  9. 如申請專利範圍第1項所述之晶圓支撐裝置，其中該等圓頭尖端具有半徑約1 mm至約2 mm。
  10. 如申請專利範圍第6項所述之晶圓支撐裝置，其中該等陶瓷球以藍寶石製成。
  11. 如申請專利範圍第6項所述之晶圓支撐裝置，其中該等陶瓷球具有直徑約2 mm至約4 mm。
  12. 如申請專利範圍第1項所述之晶圓支撐裝置，其中N為約20至約40之一整數。
  13. 如申請專利範圍第1項所述之晶圓支撐裝置，其中H不超過約50 μm。
  14. 一種半導體處理設備，包含： 一反應室，其能夠被抽空；一承載盤，其包括如申請專利範圍第1項所述之晶圓支撐裝置及一加熱組，該承載盤安裝在該反應室內；及一噴淋頭，其與該承載盤平行安裝在該反應室內。如申請專利範圍第14項所述之半導體處理設備，另外包含一RF電源，其中該承載盤及該噴淋頭充當產生電漿的上電極及下電極。
  15. 一種用於製造一晶圓支撐裝置的方法，該晶圓支撐裝置用於支撐一晶圓於其上且適於安裝在一半導體處理設備中，該方法包含：提供具有一基底表面的一晶圓支撐裝置；使用針對一300-mm晶圓之每面積的以下不等式設計突出物：(-0.5N+40)H53；5N100；其中N及H分別為在使用中決定之該等突出物的數目及高度([μm])，該等突出物從該基底表面突出及具有用於支撐一晶圓於其上的圓頭尖端，該等圓頭尖端係致使一晶圓之一反面完全利用該等圓頭尖端以點接觸來支撐，該等突出物實質上均勻布置在該基底表面上放置一晶圓的區域上；及製造具有所設計突出物之一晶圓支撐裝置。
  16. 如申請專利範圍第16項所述之方法，其中H不超過約50 μm，及N為約20至約40的一整數。
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US10854498B2 (en) 2020-12-01
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