JP6037547B2 - ウエハ支持デバイス及びその製造方法 - Google Patents

ウエハ支持デバイス及びその製造方法 Download PDF

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JP6037547B2
JP6037547B2 JP2012153698A JP2012153698A JP6037547B2 JP 6037547 B2 JP6037547 B2 JP 6037547B2 JP 2012153698 A JP2012153698 A JP 2012153698A JP 2012153698 A JP2012153698 A JP 2012153698A JP 6037547 B2 JP6037547 B2 JP 6037547B2
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文孝 荘司
文孝 荘司
福田　秀明
秀明 福田
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日本エー・エス・エム株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

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  • Chemical & Material Sciences (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
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  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

本発明は、概して、半導体処理チャンバに設置されるウエハ支持デバイスに関し、特に、ウエハを支持するための突起部を有するウエハ支持デバイスに関する。
ひとつの典型的な従来のサセプタは、図１Ａに示されているように、平坦な表面を有する。ウエハ支持デバイス１が、典型的にヒータを含むサセプタのベースに取り付けられるよう構成されている。ウエハが、プラズマ励起ＣＶＤ又はプラズマ励起ＡＬＤによって処理するために、ウエハ支持デバイスの上に配置される。図１Ａに示されているように（上の図は平面図であり、下の図は線１Ａ―１Ａに沿った断面図である）、ウエハ支持デバイスは平坦な表面を有する。しかしながら、ウエハが平坦な表面に配置され、処理される場合、成膜のあと、ウエハの裏面に、パーティクルの発生と集積（accumulation）が典型的に観測される。さらに、処理のタイプによって、ウエハの裏面がウエハ支持デバイスの上面に貼り付くということがしばしば起こる。上記問題を解決するために、従来、二つのタイプのウエハ支持デバイスが開発された。図１Ｂ（上の図は平面図であり、下の図は線１Ｂ―１Ｂに沿った断面図である）は、連続的なベース（基準）面による分離された凸部３を有するエンボスタイプのウエハ支持デバイス２を示す。図１Ｃ（上の図は平面図であり、下の図は線１Ｃ―１Ｃに沿った断面図である）は、連続的なベース面による分離された凹部５を有するディンプルタイプのウエハ支持デバイス４を示す。図１Ｂに示されている凸部は、上から見ると方形であるが、円形の場合もある。同様に、図１Ｂに示されている凸部は、上から見ると円形であるが、方形の場合もある。
成膜の間に、ウエハの裏面に発生し付着するパーティクルの数を減ずるために、ウエハの裏面とサセプタの上面との間の接触領域を減ずることが概して効果的である。しかしながら、エンボスタイプ又はディンプルタイプのウエハ支持デバイスが使用される場合でさえ、ウエハの裏面におけるパーティクルの発生と集積は、依然として問題である。さらに、ウエハ支持デバイスの凸部又は凹部はまた、膜厚及び膜特性の均一性に影響を及ぼす。
従来技術に包含される問題及び解決策に係る検討はいずれも、単に、本発明の背景の説明の目的で本開示に含まれるものであり、該検討のいずれか又は全てが、本発明が成されたときに既知であったと認めるものと解釈されるべきではない。
特開２００７−１８０２４６公報
従って、ひとつの態様において、本発明の目的は、成膜の間にウエハの裏面に付着するパーティクルの数を減ずることができ、また、膜厚及び膜特性の均一性を改良することができる、サセプタの上面を提供することである。パーティクルが、成膜の間にウエハ支持デバイスの上面と互いに接触するところのウエハの裏面に観測されることから、ある実施形態においては、ウエハの裏面とウエハ支持デバイスとの間の接触領域を減ずるために、ウエハ支持デバイスのベース面に丸い（丸みのある）先端を有する突起部が与えられ、それによって接触領域を減ずることができる。この場合、ウエハの裏面とウエハ支持デバイスの上面との間の接触点の数を減ずるために、突起部の数を減ずることが効果的であろう。しかしながら、突起部の数が少ない場合、処理のタイプによっては、ウエハは、接触点と接触点との間でわずかにたるみ、または変形されがちであり（例えわずかであっても）、それによってサセプタの上面と接触し、ウエハの裏面におけるパーティクルの発生と集積を増加させることになる。上記において、ウエハがわずかにたるみ変形した場合であっても、突起部の高さを増すことにより、ウエハの裏面とウエハ支持デバイスの上面との間の接触を抑制することが可能である。しかしながら、突起部の高さが増す場合、膜応力（ストレス）が悪くなりがちである。
上記課題に鑑みて、ある実施形態においては、丸みのある先端を有する突起部を使用して、突起部の数及び高さを制御パラメータとして使用することにより、ウエハ支持デバイスが設計され、それによってウエハの裏面におけるパーティクルの集積を著しく減ずることができ、膜応力及び膜厚の均一性などの膜特性を改良することができる。
ある実施形態は、半導体処理装置に設置されるよう構成された、ウエハを支持するためのウエハ支持デバイスを提供するものであり、該ウエハ支持デバイスは、（ｉ）ベース面と、（ｉｉ）ウエハを支持するための、ベース面から突出する、丸みのある先端を有する突起部とを含み、丸みのある先端が、全体に該丸みのある先端による点接触によってウエハの裏面が支持されるようになされたものであり、突起部が、上にウエハが配置されるベース面の領域において、実質的に一様に配置され、使用中で判定される突起部の数（Ｎ）及び高さ（Ｈ：単位μｍ）が、３００ｍｍウエハに対する領域毎（面積当たり）（per area for a 300-mm wafer）に以下の不等式を満たす。
他の態様において、ある実施形態は、半導体処理装置に設置されるよう構成された、ウエハを支持するためのウエハ支持デバイスの製造方法を提供するものであり、この製造方法は、（Ｉ）ウエハ支持デバイスにベース面を与える工程と、（ＩＩ）３００ｍｍウエハに関する領域ごとに以下の不等式を使用して突起部を設計する工程と、（ＩＩＩ）設計された突起部を有するウエハ支持デバイスを製造する工程と、を含み、
式中、Ｎ及びＨは各々、使用中に判定される突起部の数及び高さ（μｍ）であり、ウエハを支持するために、突起部がベース面から突出しており、丸みのある先端を有し、丸みのある先端が、全体に該丸みのある先端による点接触によってウエハの裏面が支持されるようになされたものであり、突起部が、上にウエハが配置されるベース面の領域において、実質的に一様に配置される。
本開示において、本発明の態様及び従来技術を越えて得られる利点を簡単に説明するために、本発明の目的及び利点が説明された。当然ながら、そのような全ての目的又はすべての利点が、本発明の任意の特定の実施形態に従って、必ずしも達成されるものではないことが理解されるべきである。それ故に当業者は、例えば、本発明が、ここに教示又は示唆された他の目的又は他の利点を必ずしも達成することなく、ここに教示された一つの利点又は利点の集まりを達成又は最適化するように、具現化され実施され得ることを、認めるであろう。
本発明のさらなる態様、特徴及び利点は、以下の詳細な説明から明らかになるであろう。
本発明のすでに述べた特徴及び他の特徴は、本発明を説明することを意図し、本発明を限定することを意図しない、好適な実施形態の図面を参照して、これから説明される。図面は説明のために大幅に単純化され、尺度も必ずしも一致しない。
図１Ａないし１Ｃは、従来のウエハ支持デバイスの概略図である。図１Ａないし１Ｃの上の図は平面図であり、下の図は、各々、線１Ａ−１Ａ、線１Ｂ−１Ｂ、及び線１Ｃ−１Ｃに沿った断面図である。 図２Ａは、本発明のひとつの実施形態に従った、ウエハ支持デバイスの概略図である。上の図は上面図であり、中央の図は、ひとつの実施形態に従った線２Ａ−２Ａに沿った断面図であり、下の図は、他の実施形態に従った線２Ａ−２Ａに沿った断面図である。 図２Ｂは、本発明の他の実施形態に従った、ウエハ支持デバイスの概略図である。上の図は上面図であり、中央の図は、ひとつの実施形態に従った線２Ｂ−２Ｂに沿った断面図であり、下の図は、他の実施形態に従った線２Ｂ−２Ｂに沿った断面図である。 図２Ｃは、本発明のさらに他の実施形態に従った、ウエハ支持デバイスの概略図である。上の図は上面図であり、中央の図は、ひとつの実施形態に従った線２Ｃ−２Ｃに沿った断面図であり、下の図は、他の実施形態に従った線２Ｃ−２Ｃに沿った断面図である。 図２Ｄは、本発明のさらなる他の実施形態に従った、ウエハ支持デバイスの概略図である。上の図は上面図であり、中央の図は、ひとつの実施形態に従った線２Ｄ−２Ｄに沿った断面図であり、下の図は、他の実施形態に従った線２Ｄ−２Ｄに沿った断面図である。 図２Ｅは、本発明の別の実施形態に従った、ウエハ支持デバイスの概略図である。上の図は上面図であり、中央の図は、ひとつの実施形態に従った線２Ｅ−２Ｅに沿った断面図であり、下の図は、他の実施形態に従った線２Ｅ−２Ｅに沿った断面図である。 図３は、直径１ｍｍの円柱状の突起部を有するウエハ支持デバイスを使用して成膜したあとのウエハの裏面のスクラッチ部分の欠陥レビューＳＥＭ（走査電子顕微鏡）画像である（比較例）。 図４は、本発明のひとつの実施形態に従った、直径２ｍｍの球が埋め込まれた、頂部が球状の突起部を有するウエハ支持デバイスを使用して、成膜したあとのウエハの裏面のスクラッチ部分の欠陥レビューＳＥＭ（走査電子顕微鏡）画像である。 図５は、本発明のひとつの実施形態に従った、直径２ｍｍの球が埋め込まれた、頂部が球状の突起部を有するウエハ支持デバイスを使用して、成膜したあとのウエハの裏面の円形の変形部分の欠陥レビューＳＥＭ（走査電子顕微鏡）画像である。 図６は、直径１ｍｍ、高さ３０μｍの円柱状の突起部を有するウエハ支持デバイスを使用して成膜したあとのウエハの裏面のパーティクルマップ（ウエハ表面検査システムによる）であり、輝点（明るい点）はパーティクルの付着を示す（比較例）。 図７は、本発明のひとつの実施形態に従った、直径２ｍｍの球が埋め込まれた、高さ５０μｍ、頂部が球状の突起部を有するウエハ支持デバイスを使用して成膜したあとのウエハの裏面のパーティクルマップ（ウエハ表面検査システムによる）であり、輝点はパーティクルの付着を示す。 図８は、本発明の実施形態に従った、膜応力と突起部の高さとの関係を示すグラフである。 図９は、本発明の実施形態に従った、ウエハの裏面のパーティクルの数と突起部の高さとの関係を示すグラフである。 図１０は、本発明の実施形態に従った、膜応力及びパーティクルの数に関した、突起部の高さと突起部の数との関係を示すグラフである。 図１１は、膜厚の均一性と突起部の高さとの関係を示すグラフである（参考例）。 図１２は、膜応力と突起部の高さとの関係を示すグラフである（参考例）。 図１３は、本発明のひとつの実施形態に従った、ウエハ支持デバイスを備えた半導体処理装置の概略図である。 図１４は、直径２ｍｍの球が埋め込まれた、高さ１０μｍ、頂部が球状の突起部を有するウエハ支持デバイスを使用して成膜したあとのウエハの裏面のパーティクルマップ（ウエハ表面検査システムによる）であり、輝点はパーティクルの付着を示す（比較例）。 図１５は、直径２ｍｍの球が埋め込まれた、高さ３０μｍ、頂部が球状の突起部を有するウエハ支持デバイスを使用して成膜したあとのウエハの裏面のパーティクルマップ（ウエハ表面検査システムによる）であり、輝点はパーティクルの付着を示す（比較例）。 図１６は、直径２ｍｍの球が埋め込まれた、高さ３２μｍ、頂部が球状の突起部を有するウエハ支持デバイスを使用して成膜したあとのウエハの裏面のパーティクルマップ（ウエハ表面検査システムによる）であり、輝点はパーティクルの付着を示す（比較例）。 図１７は、本発明の実施形態に従った、突起部の高さＨ（μｍ）と突起部の数（Ｎ）との関係を示すグラフであり、グレーの領域が、膜特性とパーティクルの集積を著しく改良する範囲を表す。
本開示において、「実質的に等しい」又は「実質的に均一」等は、例えば、１０パーセント以下、５パーセント以下、１パーセント以下、またはそれらの任意の範囲にあるような違い（差）のように当業者に認識される違いに言及するものであり得る。本開示において、「点接触」は、少なくとも一方の表面が曲面を持ち理論的又は実質的に一点で最初に互いに接触する、二つの別々の物体の硬い（剛体の）表面に係るものであり得る。または、直径が約５０μｍ以下、又は直径が約２０μｍ以下の接触領域に係るものであり得る。本開示において、定義された意味はいずれも、ある実施形態においては、一般的又は習慣的な意味を必ずしも排除するものではない。条件及び／又は構造が指定されない本開示においては、当業者は、そのような条件及び／又は構造を、本開示を考慮し、通常の実験の問題として容易に提供し得る。また、本開示において、特定の実施形態に適用された数は、他の実施形態では少なくとも±５０パーセントの範囲で修正することができ、実施形態において適用された範囲は、端点を含んでよく、または、除外してもよい。
上述のように、ある実施形態では、ウエハを支持するための、半導体処理装置に設置されるよう構成されるウエハ支持デバイスは、（ｉ）ベース面と、（ｉｉ）ウエハを支持するための、ベース面から突出する、丸みのある先端を有する突起部を含み、丸みのある先端が、全体として、該丸みのある先端による点接触によって、ウエハの裏面が支持されるようになされたものであり、突起部が、上にウエハが配置されるベース面の領域に実質的に一様に配置されている。使用中に判定される突起部の数（Ｎ）及び高さ（Ｈ：単位μｍ）は、３００ｍｍウエハに関する領域ごとに以下の不等式を満たす。
図１７は上記の関係を示すグラフであり、グレーの領域が膜の特性とパーティクルの集積を著しく改良する範囲を表す。ある実施形態では、Ｈは約５０μｍ以下である。
高さ（Ｈ）は、典型的に、ウエハ支持デバイスが使用中であるとき、すなわち、チャンバ内でウエハ支持デバイス上に配置されたウエハを処理している間の、ベース面の上面（基準面）から突起部の最高点（突起部の周囲にリセスがあるかどうかに関わらず）までの距離として定義される。ある実施形態において、セラミックの球又は合金の球が突起部を構成するために使用される場合、セラミックの球とベース面を含む材料との熱膨張の違いにより、突起部の高さは、ウエハ支持デバイスがウエハを処理するために、例えば４００℃で使用される場合、処理の前の突起部の高さと比較して、例えば、約１０μｍ減じられる。ある実施態様では、ウエハ支持デバイスが使用されていないときに、Ｈ’が突起部の高さとして定義される場合、不等式（−０．５Ｎ＋５０）＜Ｈ’＜６５；５＜Ｎ＜１００が充足される。ある実施形態において、セラミック又は合金の球が突起部を構成するために使用される場合、Ｈ＝（Ｈ’−１０μｍ）である。ある実施形態では、Ｈ’は少なくとも（−０．５Ｎ＋５２．３）であり、６０μｍ以下である。突起部が、ウエハ支持デバイスの材料の表面を機械的に研磨することにより形成される場合、熱膨張の差の問題はないため、使用中の突起部の高さは、使用中でない場合と実質的に同一であり、すなわち、Ｈ＝Ｈ’である。
セラミック又は合金の球を使用して突起部を構成する場合、Ｈ（処理温度での使用中の高さ）は、Ｈ’（室温での使用中でない高さ）から、以下のように判定される。ウエハ支持デバイスが室温Ｔ０ からＴ１ まで加熱された場合、ベース面にある球を中に収容できる凹み（void）又はリセス（recess）の深さはＡだけ増加する。
式中、ＣＴＥ（Ｍ）は、ウエハ支持デバイスのベースの材料の線熱膨張係数であり、Ｄ（Ｍ）は、凹み又はリセスの直径である。
同様に、球が室温Ｔ０ からＴ１ まで加熱された場合、球の直径はＢだけ増加する。
式中、ＣＴＥ（Ｂ）は、球の線熱膨張係数であり、Ｄ（Ｂ）は、球の直径である。従って、以下のようになる。
例えば、球がサファイア（ＣＴＥ（Ｂ）＝７Ｅ-６）でできており、ベースの材料がアルミニウム合金６０６１（ＣＴＥ（Ｍ）＝２３Ｅ-６）であり、球及び凹み又はリセスの直径が０．００２ｍ（Ｄ（Ｂ）＝Ｄ（Ｍ）＝０．００２）であり、Ｔ１ が４００（Ｔ１ ＝４００℃、Ｔ０ ＝２５℃）である場合、（Ａ−Ｂ）の値は２４．０Ｅ-６（ｍ）と計算できる。
ある実施形態において、Ｎは約２０から約４０までの整数である。ある実施形態では、Ｎは２１以上であるが、６０より少ない。形態に従って、ウエハ支持デバイスを使用して、ＴＥＯＳから形成される酸化ケイ素膜などの膜は、安定した応力（stable stress）を有し（ウエハ間の膜応力の偏差は、例えば、約２０ＭＰａ又は約１０ＭＰａ以内に抑制することができる）、ウエハの裏面に付着するパーティクルの数は、３００ｍｍウエハについて面積当たり、約４００以下又は約２００以下まで減ずることができる。ある実施態様において、ウエハ支持デバイスは加熱要素又は個別の電極を含まず、または、電気的チャックに必要な、または電気的チャックとして機能するいかなる構造も有しない。ある実施形態では、ウエハ支持デバイスは、電気的チャックに必要な、または電気的チャックとして機能するいかなる構造を有することなく、加熱要素及び／又は個別の電極を含む。
ある実施形態では、ウエハの裏面と突起部の丸みのある先端が互いに点接触によって接するため、それらの間の（成膜の前の）最初の接触領域は非常に小さく、例えば、ウエハの裏面の領域に対して、１０-６％ないし１０-３％（ある実施形態では、１０-５％ないし１０-４％）の範囲にある。
ある実施形態では、ベース面のひとつの直径に沿った線上に並べられる突起部は実質的に等しい間隔で配列される。ある実施形態では、突起部はベース面に幾何学的配置において並べられ、突起部の各々が、突起部によって形成される同一（合同）の正方形又は同一（合同）の正三角形の頂点を構成する。あるいは、ある実施形態では、突起部は同心円状に配置される。あるいは、ある実施形態では、突起部はベース面に幾何学的配置で並べられ、各々の突起部が、突起部によって形成される同一（合同）の正六角形の各々の頂点を構成する。ある実施形態では、前述の任意の形態が、任意の組合せにおいて、単一のベース面に使用されうる。
ある実施形態において、突起部はベース面に埋め込まれたセラミックの球から形成される。ある実施形態では、セラミックの球はサファイアでできている。ある実施形態では、セラミックの球はアルミナ、他の酸化アルミニウム、窒化アルミニウム、窒化マグネシウム、炭化ケイ素のようなものからできている。ある実施形態では、突起部はドーム形セラミックの形態である。ある実施形態では、ステンレス鋼、アルミ合金、チタン合金のようなものが使用されてもよい。ある実施形態では、丸い先端は約１ミリないし約２ミリの半径を有する。ある実施形態では、セラミックの球は、約２ミリないし４ミリの直径を有する。
ある実施形態では、突起部はベース面の材料と同じ材料でできている。ベース面は、アルミニウム、陽極酸化アルミニウム、アルミ合金のようなものでできていてよい。
ある実施形態では、ベース面に、ウエハを支持するための突起部以外の突起部は与えられない。ある実施形態では、ベース面は、突起部以外に、段差、スペーサ、又はリムを有さず、クランプ機構を有しない。ある実施形態では、ウエハは突起部の上に、主に又は実質的に、重力によって（by gravity）取り付けられる。
本発明の他の態様では、半導体処理装置が提供され、該半導体処理装置は、（Ｉ）真空にすることができる反応チャンバと、（ＩＩ）任意の前述のウエハ支持デバイスと加熱ブロックとを含むサセプタであって、反応チャンバ内に設置されるサセプタと、（ＩＩＩ）サセプタと平行に反応チャンバ内に設置されるシャワーヘッドと、を含む。ある実施形態では、ウエハ支持デバイスは、プラズマＣＶＤ装置又は熱ＣＶＤ装置を含むＣＶＤ装置、プラズマＡＬＤ装置又は熱ＡＬＤ装置を含むＡＬＤ装置、又はエッチング装置内で、サセプタとして使用することができる。ある実施形態では、半導体処理装置はさらに、ＲＦパワー源を含み、サセプタ及びシャワーヘッドが、プラズマを発生させるために、それぞれ下部電極及び上部電極として機能する。
本発明のさらなる他の態様では、ウエハを支持するためのウエハ支持デバイスであって、半導体処理装置内に設置されるよう構成されたウエハ支持デバイスの製造方法が提供され、該方法は、（ａ）ウエハ支持デバイスにベース面を与える工程と、（ｂ）３００ｍｍウエハについて面積当たり、不等式：（−０．５Ｎ＋４０）≦Ｈ≦５３；５≦Ｎ≦１００を使用して突起部を設計する工程と、（ｃ）設計された突起部を備えたウエハ支持デバイスを製造する工程と、を含み、上記の式中、Ｎ及びＨは各々、使用中に判定される突起部の数及び高さ（μｍ）であり、突起部がベース面から突出しウエハを支持するための丸い先端を有し、丸い先端が、大部分において該丸い先端による点接触によって、ウエハの裏面が支持されるようになされたものであり、突起部が、上方にウエハが取り付けられるベース面の領域において実質的に一様に配置される、ことを特徴とする。
ある実施形態において、不等式は、（−０．５Ｎ＋Ｘ）＜Ｈ＜Ｙ；５＜Ｎ＜１００であり、式中、Ｘ＝４０．５、４１、４２、４３、４４又は４５であり、及び、Ｙ＝４７、４８、４９、５０、５１又は５２であり、これらの任意の組合せである。ある実施形態では、Ｎは約２０から約４０までの整数である。ある実施形態では、Ｎは２１以上であるが、６０より小さい。
本発明は、本発明を限定することを意図しない実施形態及び図面を参照して、詳細に説明されるであろう。
図２Ａは、本発明のひとつの実施形態に従ったウエハ支持デバイス１０の概略図であり、上の図は上面図であり、中央の図は、ひとつの実施形態に従った線２Ａ―２Ａに沿った断面図であり、下の図は、他の実施形態に従った線２Ａ―２Ａに沿った断面図である。この実施形態では、突起部１１、１１’はベース面に渡って幾何学的配置で並べられ、突起部の各々が突起部によって形作られる同一の正方形の各々の頂点を構成する。ベース面の直径に沿った線（２Ａ―２Ａ）上に並んだ突起部１１、１１’は、実質的に同じ間隔で配列されている。突起部１１はベース面に埋め込まれたセラミックの球であり、それに対して、突起部１１’は、ベース面の材料と同じ材料で形成されている。セラミック球１１はベース面にコーキング（かしめ）によって埋め込まれ得る。例えば、特開２００７−１８０２４６公報（特許文献１）に開示されたかしめ方法を使用することができ、その開示全体が本明細書に組み込まれる。突起部１１’は機械的に、例えば研磨することにより、形成することができる。図２Ｂに示されているウエハ支持デバイス１２及び突起部１３、１３’は、図２Ａの突起部１１、１１’の数が２１個であるのに対し、図２Ｂの突起部１３、１３’の数が３７個であることを除いては、図２Ａに示されているものと同様のものである。
図２Ｄに示されているウエハ支持デバイス１６及び突起部１７、１７’は、図２Ａの突起部１１、１１’の数が２１個であるのに対し図２Ｄの突起部１７、１７’の数が２２個であることと、突起部１７、１７’がベース面に渡って幾何学的配置で並べられ、突起部の各々が、突起部によって形作られる同一の正三角形の各々の頂点を構成していることを除いては、図２Ａに示されているものと同様のものである。図２Ｄに示されている形態において、どの二つの隣り合う突起部の間の距離も等しく、それによって、たるみを生じさせることなく、より均一にウエハを支持することができる。
図２Ｅに示されているウエハ支持デバイス１８及び突起部１９、１９’は、突起部１９、１９’が同心円状に配置されていることを除いては、図２Ａに示されているものと同様のものである（図２Ｅの突起部１９、１９’の数は２１個であり、図２Ａの突起部の数に等しい）。
図２Ｃに示されているウエハ支持デバイス１４及び突起部１５、１５’は、図２Ａの突起部１１、１１’の数が２１個であるのに対して図２Ｃの突起部１５、１５’の数が５４個であり、及び、突起部１５、１５’がベース面に渡って幾何学的配置で並べられ、各々の突起部が突起部によって形作られる同一の正六角形の各々の頂点を構成することを除いては、図２Ａに示されているものと同様のものである。また、ベース面の直径に沿った線上に並べられた突起部１５、１５’は等しい間隔で並べられておらず、二つの異なった間隔（交互に、長い間隔と短い間隔）で配列されている。
図１３は、本発明のひとつの実施形態に従ったウエハ支持デバイスを備えた半導体処理装置の概略図である。反応チャンバ１１１において、サセプタトッププレート（ウエハ支持デバイス）１０１は加熱要素を含み、それは上下移動可能である。シャワーヘッド１０２はウエハ支持デバイス１０１の上に平行に配置される。シャワーヘッド１０２及びウエハ支持デバイス１０１は、容量結合されそれぞれ上部電極及び下部電極として機能する。ＲＦパワー源１０５がシャワーヘッド１０２にＲＦパワーを供給し、ウエハ支持デバイスは接地される。シャワーヘッド１０２へ、バルブ１０３を備えたライン１０８を経由して前駆物質が供給され、一方で反応物質又は他の反応ガスが、バルブ１０４を備えたライン１０９を経由して供給される。反応チャンバは排気システムを有する（図示せず）。
実施例
（比較例１）
図１３に示された半導体処理装置により、３００ｍｍウエハ上に、ＴＥＯＳを使用して約３５０ｎｍの厚みを有する酸化ケイ素膜が成膜された。半導体処理装置内に、１７個の円柱状の突起部が同心円状に分布したウエハ支持デバイス（アルミ合金製）が設置され、円柱の直径は１．０ｍｍ、高さ（Ｈ’）は５０μｍであった（突起部が機械的に形成されていることから、使用中の高さ（Ｈ）は使用中でない高さ（Ｈ’）と同じものとして判定された）。成膜の後、ウエハの裏面が観察された。図３は、成膜の後の、ウエハの裏面のスクラッチ部分の欠陥レビューＳＥＭ（走査電子顕微鏡）画像である。図３に示されているように、大きなスクラッチ（そのうちのいくつかは長さが１ｍｍ以上であり幅が５０μｍないし１００μｍであった）の多くの領域が、概して、突起部の先端が位置していた領域に観察された。さらに、図６（成膜した後のウエハ表面検査システムによるウエハの裏面のパーティクルマップ、輝点はパーティクルの付着を示す）に示されているように、パーティクルの集積が観察され、０．２μｍ以上の直径を有する２４７のパーティクルが観察された。
（実施例１）
図２Ｂに示されたウエハ支持デバイス（３７個の突起部）であって、直径２ｍｍ、高さ（Ｈ’）５０μｍ（Ｈ＝３８μｍ）のサファイアの球を使用したものが使用された。その他は比較例１と同じ方法によりウエハ上に成膜が行われた。アルミ合金の本体とサファイア球との熱膨張係数の違いのため、使用中の高さ（Ｈ）は、以下の式により計算されたように、使用中でないときの高さ（Ｈ’）より約１２μｍ短くなると判定された。
図４は、成膜の後の、ウエハの裏面のスクラッチ部分の欠陥レビューＳＥＭ（走査電子顕微鏡）画像である。図５は、成膜のあとのウエハの裏面の円形の変形部分の欠陥レビューＳＥＭ（走査電子顕微鏡）画像である。図４、５に示されているように、スクラッチ及び円形の変形部分は観察されたものの、それらは非常に小さく、直径約２０μｍないし約３０μｍの範囲内の小さい領域に限定されていた。さらに、図７（成膜した後のウエハ表面検査システムによるウエハの裏面のパーティクルマップ、輝点はパーティクルの付着を示す）に示されているように、比較例に比べ、パーティクルの集積が著しく少ないことが観測され、１１２の直径０．２μｍ以上のパーティクルが観察された。
（実施例２）
直径２ｍｍのサファイア球を使用した図２Ａに図示のウエハ支持デバイス（２１個の突起部）、及び、直径２ｍｍのサファイア球を使用した図２Ｂに図示のウエハ支持デバイス（３７個の突起部）が使用され、これらのウエハ支持デバイスの高さ（Ｈ’）が、図８に示されているように、変更され、膜の膜応力が測定された（アルミ合金の本体とサファイア球との熱膨張係数の違いのため、使用中の高さ（Ｈ）は使用中でないときの高さ（Ｈ’）より約１２μｍ低くなると判定された）。そのほかは、実施例１と同じ方法で、ウエハ上に成膜が行われた。図８は、この実施形態に従った、膜応力と突起部の高さ（Ｈ’）との関係を示すグラフである。応力（ストレス）は７つの膜の平均であり、図２Ａに示されたウエハ支持デバイスを使用して、高さ（Ｈ’）が４０μｍ以下のときのデータが取得され、図２Ｂに示されたウエハ支持デバイスを使用して、高さ（Ｈ’）が４０μｍを上回るときのデータが取得された。図８に示されているように、突起部の高さ（Ｈ’）が約６０μｍ又は約６５μｍより小さい（Ｈ＜約４８μｍ、または、Ｈ＜５３μｍ）場合、膜応力の偏差は１０ＭＰａ以内に減少され得る。
（実施例３）
直径２ｍｍのサファイア球を使用した図２Ａに図示のウエハ支持デバイス（２１個の突起部）、及び、直径２ｍｍのサファイア球を使用した図２Ｂに図示のウエハ支持デバイス（３７個の突起部）が使用され、これらのウエハ支持デバイスの高さ（Ｈ’）が、図９に示されているように変更され、ウエハの裏面のパーティクルの数が測定された。そのほかは、実施例１と同じ方法で、ウエハ上に成膜が行われた。図９は、この実施形態に従った、ウエハの裏面のパーティクルの数と突起部の高さ（Ｈ’）との関係を示すグラフである。パーティクルの数は、三つのウエハの平均であった。図９に示されているように、図２Ａ（２１個の突起部）に示されている突起部の高さ（Ｈ’）が約４０μｍを下回る（Ｈ＜約２８μｍ）ことがない場合、直径０．２μｍ以上のパーティクルの数を約５００未満に制御することができ、突起部（２１個の突起部）の高さ（Ｈ’）が約４０μｍを上回る場合（Ｈ＞約２８μｍ）、直径０．２μｍ以上パーティクルの数を約３００未満に制御することができ、それに対して、図２Ｂに示された突起部（３７個の突起部）の高さ（Ｈ’）が３０μｍを上回る場合（Ｈ＞約１８μｍ）、直径０．２μｍ以上のパーティクルの数を３００未満に制御することができた。図２Ａに示された突起部（２１個の突起部）及び図２Ｂに示された突起部（３７個の突起部）の両方に関して、突起部の高さ（Ｈ’）が約５０μｍ以上（Ｈ≧約３８μｍ）の場合、パーティクルの数を約２００未満に減少させることができるであろう。
図１４は、高さ（Ｈ’）１０μｍ（Ｈ≒０μｍ）の球状の頂部の２１個の突起部を有するウエハ支持デバイスを使用して成膜したあとのウエハの裏面のパーティクルマップ（ウエハ表面検査システムによる）であり、輝点はパーティクルの付着を示す（比較例として）。サファイアの球が使用された場合、使用中の高さ（Ｈ）は使用中でないときの高さ（Ｈ’）よりも約１２μｍ短くなると判定され、従って、１２μｍの高さ（Ｈ’）はほぼ全面的な接触であると判定された。図１５は、高さ（Ｈ’）３０μｍ（Ｈ＝１８μｍ）の球状の頂部の２１個の突起部を有するウエハ支持デバイスを使用して成膜したあとのウエハの裏面のパーティクルマップ（ウエハ表面検査システムによる）であり、輝点はパーティクルの付着を示す（比較例として）。図１６は、高さ（Ｈ’）３２μｍ（Ｈ＝２０μｍ）の球状の頂部の２１個の突起部を有するウエハ支持デバイスを使用して成膜したあとのウエハの裏面のパーティクルマップ（ウエハ表面検査システムによる）であり、輝点はパーティクルの付着を示す（比較例として）。２１個の突起部（サファイア球）を有するウエハ支持デバイスに関し、高さ（Ｈ’）が３２μｍ以下（Ｈ≦２０μｍ）の場合は、成膜の間、たるみによって、ウエハの裏面がウエハ支持デバイスのベース面に、突起部と突起部の間の領域において接触し（突起部の周りのパーティクルは少なかった）、それによってウエハの裏面におけるパーティクルの集積が増加した。
（参考例１）
突起部の高さが変更されたことを除いては、比較例１と同じ方法でウエハ上に成膜が行われた。図１１は、膜厚の均一性と突起部の高さとの関係を示すグラフである。図１２は、膜応力と突起部の高さとの関係を示すグラフである。図１１及び図１２に示されているように、突起部の高さが約６０μｍを超えた場合、膜応力だけではなく膜厚の均一性も悪くなった。図１２は図８に対応しており、従って、球状の頂部の突起部を有するウエハ支持デバイスが使用される場合はまた、突起部の高さが約６０μｍを上回るとき、膜厚の均一性が悪くなると考えられる。
（突起部の数と高さとの関係）
実験を通じて、突起部ごとに平均して二つの直径０．２μｍ以上のパーティクルが発生し、ウエハの裏面に付着すると判定され得る。従って、突起部の数が約１００以下である場合、パーティクルの数は約２００以下になり得ると予想される。さらに、突起部の数が増加する場合、ウエハ支持デバイスを製造するコストもまた増加する。上記の点及び前述の実施例に鑑みて、図１０は、本発明の実施形態に従って、膜応力及びパーティクルの数を著しく改良するための、突起部の高さ（Ｈ’）と突起部の数との関係を示すグラフである。図１０において、「Ｎ／Ｇ」は、「不良」又は「基準を満たさない」ことを示し、「ＯＫ」は「基準を満たす」又は「十分」であることを示し、「Ｇｒａｙ」は「基準を満たさない」と「基準を満たす」との間の範囲を示し、及び、「ＯＫ Ｂ／Ｌ」は「基準を満たす」ボーダーラインを示す。
当業者は、本発明の思想から逸脱することなく、多数の様々な修正ができることを理解するであろう。それ故、本発明の形態は説明のためのものであり、本発明の範囲を限定することを意図しないものであることが、明確に理解されなければならない。

Claims (8)

  1. ウエハを支持するための、半導体処理装置内に設置されるよう構成されたウエハ支持デバイスであって、
    ベース面と、ここで前記半導体処理装置内に、前記ベース面を加熱する加熱要素が備えられ、
    ウエハを支持するための、前記ベース面から突き出た突起部であって、丸みのある先端を有する突起部と、を含み、
    前記丸みのある先端が、全体に、該丸みのある先端による点接触によって、ウエハの裏面を支持するようになされたものであり、
    前記ウエハの裏面と接触する前記突起部の前記丸みのある先端の全領域が、前記ウエハの裏面の領域の１０ -６ パーセントから１０ -３ パーセントの範囲にあり、
    前記突起部と前記ベース面との間で熱膨張に差異が存在しないように、前記突起部と前記ベース面とが同じ材料から成り、
    前記突起部が前記ベース面を機械加工により形成されたものであり、
    前記突起部が、ウエハが上方に配置される前記ベース面の領域で一様に配置されたものであり、
    使用中に判定される突起部の数（Ｎ）及び突起部の高さ（Ｈ［μｍ］）が、３００ｍｍウエハに関する面積当たり、以下の式、
    （数１）
    （-０．５Ｎ+４０）≦Ｈ≦４７
    ２１≦Ｎ≦６０
    を充足し、
    前記ウエハ支持デバイスはクランプ機構を有せず、使用中前記ウエハは重力により前記突起部上に保持され、
    前記ベース面の直径に沿った線上に配置された前記突起部同士が等間隔である、
    ことを特徴する、ウエハ支持デバイス。
  2. 前記突起部が前記ベース面に幾何学的配置で配置され、各々の突起部が、前記突起部によって形成される等しい正方形又は等しい正三角形の各々の頂点を構成する、請求項２に記載されたウエハ支持デバイス。
  3. 前記突起部が、ドーム形のセラミックから成る、請求項１に記載されたウエハ支持デバイス。
  4. 前記丸みのある先端が１ｍｍないし２ｍｍの半径を有する、請求項１に記載されたウエハ支持デバイス。
  5. Ｎが２１から４０までの整数である、請求項１に記載されたウエハ支持デバイス。
  6. Ｈが４７μｍ以下である、請求項１に記載されたウエハ支持デバイス。
  7. 半導体処理装置であって、
    真空にすることができる反応チャンバと、
    前記反応チャンバの内部に設置される、請求項１のウエハ支持デバイスとを含むサセプタと、
    前記反応チャンバの内部に前記サセプタと平行に設置されるシャワーヘッドと、を含む、半導体処理装置。
  8. さらに、ＲＦパワー源を含み、
    プラズマを生成するために、前記サセプタ及び前記シャワーヘッドがそれぞれ下部電極及び上部電極として働く、請求項７に記載された半導体処理装置。
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