TW201538780A - 氣體分配系統、包含該系統的反應器、以及使用該系統和反應器的方法 - Google Patents

氣體分配系統、包含該系統的反應器、以及使用該系統和反應器的方法 Download PDF

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TW201538780A
TW201538780A TW104105965A TW104105965A TW201538780A TW 201538780 A TW201538780 A TW 201538780A TW 104105965 A TW104105965 A TW 104105965A TW 104105965 A TW104105965 A TW 104105965A TW 201538780 A TW201538780 A TW 201538780A
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gas
flange
distribution system
passages
expansion ports
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Mark Hawkins
Bradley Leonard Halleck
Tom Kirschenheiter
Benjamin Hossa
Clay Pottebaum
Claudio Miskys
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Asm Ip Holding Bv
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Abstract

本發明揭示一種氣體分配系統、一種包含該氣體分配系統之反應器系統及一種使用該氣體分配系統及反應器系統之方法。該氣體分配系統可用於氣相反應器系統中以獨立地精細調節至該等反應器系統之一反應室的反應物之氣體源位置及氣流速率。

Description

氣體分配系統、包含該系統的反應器、以及使用該系統和反應器的方法
本發明大體上係關於氣相反應器及系統。更特定而言，本發明係關於用於氣相反應器之氣體分配系統、包含氣體分配系統之反應器系統及使用氣體分配系統及反應器系統之方法。
諸如化學氣相沈積(CVD)、電漿增強CVD(PECVD)、原子層沈積(ALD)及其類似者之氣相反應器可用於多種應用，包含在基板表面上沈積及蝕刻材料。舉例而言，氣相反應器可用於在基板上沈積及/或蝕刻層以形成半導體裝置、平板顯示裝置、光伏打裝置、微機電系統(MEMS)及其類似者。
典型氣相反應器系統包含：包含反應室之反應器、流體耦接至反應室之一或多個前驅氣體源、流體耦接至反應室之一或多個運載或沖洗氣體源、用以將氣體(例如，前驅氣體及/或運載或沖洗氣體)遞送至基板之表面的氣體分配系統及流體耦接至反應室的廢氣源。系統亦通常包含用以在處理期間將基板固持就位之晶座。晶座可經組態以向上及向下移動以收納基板及/或可在基板處理期間旋轉。
大體而言，橫跨基板之表面具有均勻薄膜性質(例如，薄膜 厚度及電阻率)係合乎需要的。已開發各種氣體分配系統以試圖達成均勻或實質上均勻的薄膜性質。舉例而言，已開發包含位於反應室內的多個通口(例如，多達5個)或噴嘴的氣體分配系統以增加橫跨基板表面的薄膜性質之均勻性。然而，此等系統並不充分解決薄膜性質之均勻性，尤其在基板之邊緣處或靠近基板之邊緣處的均勻性。另外，此等系統大體上不允許獨立控制薄膜性質(諸如，薄膜厚度均勻性及電阻率)。
隨著形成於基板表面上之特徵的大小降低，控制薄膜性質(包含薄膜厚度及電阻率)變得愈來愈重要。此外，獨立地調節薄膜性質(例如，獨立地調節使用氣相反應器所沈積之層(諸如，使用此等反應器生長之磊晶層)中的薄膜厚度均勻性及電阻率)可係合乎需要的。因此，所要的為經改良氣體分配系統、包含經改良氣體分配系統之反應器系統及使用氣體分配系統及反應器系統之方法。
本發明之各種具體實例係關於氣體分配系統、包含一氣體分配系統之氣相反應器系統及使用該等氣體分配系統及反應器系統之方法。雖然下文較詳細論述本發明之各種具體實例解決先前氣體分配系統及反應器系統之缺點的方式，但大體而言，本發明之各種具體實例提供包含多個通口之氣體分配系統，其中可獨立地控制至該等通口中之一或多者的流動速率。各種通口可耦接至不同氣體源以允許精細調節提供至一基板表面之反應物。另外，例示性氣體分配系統允許獨立調節薄膜性質，諸如，薄膜厚度、薄膜厚度均勻性及薄膜電阻率。
根據本發明之例示性具體實例，一種氣體分配系統包含一凸 緣，其包含：形成於該凸緣內之一或多個第一氣體膨脹通口、形成於該凸緣內之一或多個第二氣體膨脹通口、形成於該凸緣內之一或多個第一氣體通道，其中該一或多個第一氣體通道中之每一者在該等第一氣體膨脹通口中之該一或多者中之一者處終止，及形成於該凸緣內之一或多個第二氣體通道，其中該一或多個第二氣體通道在該等第二氣體膨脹通口中之一或多者處終止。例示性凸緣亦可包含一或多個第一導管，其中每一第一導管流體連通於一第一膨脹通口與一反應室之間；及一或多個第二導管，其中每一第二導管流體連通於一第二膨脹通口與該反應室之間。根據此等具體實例之各種態樣，該一或多個第一氣體通道流體耦接至一前驅體源，諸如選自由以下各者組成之群組的一前驅體源：三氯矽烷、二氯矽烷、矽烷、二矽烷、三矽烷及其他半導體層前驅體源。根據進一步態樣，一或多個第二氣體通道耦接至一摻雜劑源，諸如具有或不具有諸如氫氣、氮氣、氬氣或其類似者之一運載氣體的包括As、P、C、Ge及B之一源。該前驅體源及該摻雜劑源兩者可包含合適之摻雜劑，諸如As、P、C、Ge及B。根據一些例示性態樣，一或多個第一氣體膨脹通口及一或多個第二氣體膨脹通口彼此鄰近(例如，相對於反應室中之氣流呈一前後組態)以促進第一氣體與第二氣體之局部混合。為允許精細調節各種薄膜或反應物性質，該氣體分配系統可包含流體耦接至該一或多個第一氣體通道中之每一者及/或該等第二氣體通道中之一或多者的一獨立控制閥。此情況可允許獨立控制至該等第一氣體膨脹通口及該等第二氣體膨脹通口中之一或多者及該等各別導管的氣體。另外，根據此等具體實例之例示性態樣，該等第一氣體通道及/或該等第二氣體通道中之兩者和兩者以上一起耦接於該凸緣之上游(例如， 介於一各別氣體源與耦接至一膨脹通口之一閥之間)。本文中所描述之各種氣體分配系統允許獨立調節橫跨一基板之一表面的薄膜性質(例如，可獨立於遠離該基板之一邊緣的薄膜性質調節靠近該基板之該邊緣的性質)。
根據本發明之額外例示性具體實例，一種氣相反應器系統包含：如本文中所描述之一氣體分配系統、耦接至該反應室之一廢氣源、流體耦接至該一或多個第一氣體通道之一第一氣體源及流體耦接至該一或多個第二氣體通道之一第二氣體源。
根據本發明之再額外例示性具體實例，一種將氣相反應物提供至一基板之一表面的方法包含以下步驟：提供一氣相反應器系統，提供如本文中所描述之一氣體分配系統，在該反應室內提供一基板，及將該基板曝露於來自該第一氣體源之一第一氣體及來自該第二氣體源之一第二氣體。例示性方法可進一步包含操縱耦接至該一或多個第一氣體通道之一或多個控制閥及/或操縱耦接至該一或多個第二氣體通道之一或多個控制閥。例示性方法亦可包含提供對來自該第一氣體源之一第一氣體及來自該第二氣體源之一第二氣體中之一或多者的一不對稱設定之一步驟，以(例如)橫跨一基板之一表面(包含該基板之一邊緣區域)調節(例如，獨立地)薄膜性質(諸如，薄膜厚度、薄膜厚度均勻性及薄膜電阻率)。
可藉由參看結合以下說明性諸圖考慮的實施方式及申請專利範圍得到對本發明之例示性實施方式的較完整理解。
圖1說明根據本發明之例示性實施方式的反應器系統之一部分的剖面圖。
圖2說明根據本發明之例示性實施方式的氣體分配系統。
圖3說明根據本發明之例示性實施方式的氣體分配系統之一部分。
圖4(a)至圖4(f)說明根據本發明之進一步例示性實施方式的氣體分配系統之一部分。
將瞭解，諸圖中之元件係為簡單及清楚起見而說明且未必按比例繪製。舉例而言，可相對於其他元件將諸圖中之一些元件之尺寸放大以有助於改良對本發明之所說明具體實例的理解。
下文所提供的例示性實施方式之描述僅僅係例示性的且僅希望用於說明目的；以下描述並不意欲限制本發明或申請專利範圍之範圍。此外，對具有所陳述特徵之多個實施方式的敍述並不意欲排除具有額外特徵之其他實施方式或併入有所陳述特徵之不同組合的其他實施方式。
本發明大體上係關於氣體分配系統、包含氣體分配系統之反應器系統及使用氣體分配系統及反應器系統之方法。如本文中所描述的氣體分配系統及包含氣體分配系統之反應器系統可用於在氣相反應器中處理基板(諸如，半導體晶圓)。作為實例，本文中所描述之系統可用於在基板之表面上形成或生長磊晶層(例如，摻雜半導體層)。如本文中所使用，「基板」係指具有其上可沈積材料之表面的任何材料。基板可包含諸如矽(例如，單晶矽)之塊體材料或可包含上覆塊體材料之一或多個層。此外，基板可包含各種拓撲，諸如在基板層的至少一部分內或上形成之溝槽、通孔、線及其類似者。
如下文更詳細地闡述，使用如本文中所描述之例示性氣體分 配系統係有利的，此係因為其允許獨立控制反應室內之各種位置處的氣體選擇及流動速率。獨立控制氣體及流動速率又可允許獨立調節使用包含氣體分配系統之反應器系統所形成的薄膜之薄膜性質。舉例而言，例示性氣體分配系統可用於獨立地調節(例如)基板上之磊晶形成層的電阻率及薄膜厚度(或厚度均勻性)。另外或替代性地，例示性氣體分配系統可用於補償原本會發生於反應器系統之反應室內的氣流變化、耗盡速率變化、自動摻雜或其組合。舉例而言，對各種氣體之獨立控制可用於補償原本可能造成一或多個薄膜性質的不均勻性之邊緣效應及/或基板旋轉。
圖1說明例示性反應器系統100之剖示側視圖。反應器系統100包含可選基板處置系統102、反應室104、氣體分配系統106及(視情況)安置於反應室104與基板處置系統102之間的壁108。系統100亦可包含第一氣體源302、第二氣體源306及廢氣源110。在反應器系統100之操作期間，將基板(未說明)自(例如)基板處置系統102傳送至反應室104。一旦將基板傳送至反應室104，就將一或多種氣體(諸如，前驅體、摻雜劑、運載氣體及/或沖洗氣體)經由氣體分配系統106引入至反應室104中。反應器系統100可包含任何合適之反應室104，諸如可作為系統購得自ASM的水平流冷壁磊晶反應器。
現參看圖2及圖3，更詳細地說明氣體分配系統106。氣體分配系統106包含凸緣202，下文結合圖4(a)至圖4(f)更詳細地描述該凸緣。在所說明之實例中，氣體分配系統106之第一氣體管線304中的一或多者(例如，複數個)耦接至第一氣體源302且第二氣體源306耦接至一或多個(例如，複數個)第二氣體管線308。第一氣體管線304及第二氣體管 線308中之每一者可耦接至閥310至328以允許獨立控制各別氣體至形成於凸緣202內的通道之流動(例如，流動速率)。閥310至328可包含可控制氣體至形成於凸緣202內的各別通道之流動速率的任何合適自動或手動閥。儘管說明為具有兩個氣體源，但根據本發明之氣體分配系統可包含任何合適數目個氣體源。
圖4(a)至圖4(f)以更多細節說明凸緣202之一部分的視圖。凸緣202可由任何合適材料形成，諸如經機器加工不鏽鋼(例如，316不鏽鋼)。對於經設計以用於處理300mm基板之反應器系統100，凸緣202之高度H可在約207.1mm至約207.7mm之範圍內變化或為約207.4mm，凸緣202之長度L可在約472.9mm至約473.5mm之範圍內變化或為約473.2mm，且凸緣202之寬度W可在約31.40mm至約31.60mm之範圍內變化或為約31.50mm。
圖4(a)說明凸緣202之一部分的後視透視圖。圖4(b)說明已移除前板(圖4(b)中未說明)之部分凸緣202的前視透視圖。圖4(c)說明前板被移除的情況下凸緣202的一部分之前視平面圖。圖4(d)說明部分凸緣202之俯視平面圖。且，圖4(e)及4(f)說明凸緣202之部分的部分剖示圖，其分別說明第一氣體及第二氣體通道及導管。
凸緣202包含流體耦接至第一膨脹通口402至414(圖4(b)中所說明)及第一氣體導管416(圖4(e)中說明其中之一者)的一或多個第一氣體通道330、334、336、338、342、344、348，及流體耦接至第二氣體膨脹通口418至422(圖4(a)中所說明)及第二氣體導管424(圖4(f)中說明其中之一者)的一或多個第二氣體通道332、340及346。作為實例， 凸緣202可包含三個或三個以上、五個或五個以上或七個或七個以上第一膨脹通道、第一膨脹通口及第一氣體導管，及一或多個、兩個或兩個以上或三個或三個以上第二氣體通道、第二氣體膨脹通口及第二氣體導管。在所說明之實例中，凸緣202包含七個第一膨脹通道、第一膨脹通口及第一氣體導管，及三個第二氣體通道、第二氣體膨脹通口及第二氣體導管。氣體分配系統106可具有耦接至各別通道之相同或類似數目個對應第一氣體管線及/或第二氣體管線308。針對每一源氣體(例如，第一氣體源302及第二氣體源306)使用多個通道、膨脹通口及導管允許精細控制及調節自每一氣體源至反應室104內之多個獨立位置之流動速率。此情況又允許獨立控制橫跨基板之表面的薄膜性質。
對於例示性凸緣，第一氣體通道及第二氣體通道之直徑或類似橫截面尺寸可在3.7mm至約43mm之範圍內變化或為約4.0mm。且第一氣體通道之長度可在約74.9mm至約75.5mm之範圍內變化或為約75.2mm，且第二氣體通道之長度可為約81.7mm至約82.9mm，或為約82.3mm。第一導管可具有彎曲壁，從而產生約0.46mm至約0.66mm或為約0.56mm之最小寬度W1。類似地，第二氣體導管可具有約0.46mm至約0.66mm或為約0.56mm之最小寬度。
再次參看圖4(a)，凸緣202之後表面426包含延伸通過凸緣202之厚度的開口428，使得基板可通過(例如，在基板由反應室104收納或自該反應室104排出時)。後表面426亦可包含用以收納諸如O形環之密封元件的一或多個凹槽430、432。第一板434(其可形成壁108之部分)可耦接至後表面426以形成第二氣體導管(例如，導管424)。類似地，參 考圖4(b)及圖4(e)，第二板436可耦接至凸緣202之一部分的前表面438以形成第一氣體導管416。
如圖4(f)中最佳說明，第一氣體膨脹通口中之一或多者(例如，膨脹通口402)及第二氣體膨脹通口中之一或多者(例如，膨脹通口422)可呈前後組態，使得第一及第二氣體中之一者靠近凸緣202之前部離開且第一及第二氣體中之另一者靠近凸緣202之背部離開。此情況允許靠近凸緣202且遠離基板混合第一氣體與第二氣體，此情況可緩解原本可能帶來橫跨基板之表面的薄膜性質不均勻性之橫跨基板表面的任何突發氣體混合差異。
如上文所提到，反應器系統100及氣體分配系統106可用於在基板之表面上沈積或生長層(諸如，磊晶層)。使用反應器系統100及/或氣體分配系統104之方法包含提供氣相反應器系統(諸如，系統100)，及將基板曝露於來自第一氣體源(例如，源302)之第一氣體及來自第二氣體源(例如，源302)之第二氣體的步驟。可個別地操縱至第一氣體通道、第一氣體膨脹通口及第一氣體導管中之每一者的氣流(例如，使用閥310、314、316、318、322、324及328)；且可操縱至第二通道、第二氣體膨脹通口及第二氣體導管中之每一者的氣流(例如，使用閥312、320及326)以提供對(例如)所生長薄膜之薄膜性質的精細調節或操縱。另外，因為氣體分配系統106包含複數個第一及第二通道、氣體膨脹通口及氣體導管中之每一者，所以可選擇及/或操縱各別氣體之進入位置。可打開、關閉各種閥或調整其流動速率，使得可操縱各別氣體之流動速率及進入位置。作為實例，可調整閥310至328以提供第一氣體及/或第二氣體至反應室及基板 之表面的不對稱流動。此情況允許(例如)補償處理期間之基板移動(例如，旋轉)。舉例而言，可偏置第一氣體及/或第二氣體之氣流，使得較大體積之氣體隨旋轉基板之方向流動。類似地，可調整流動速率及位置以補償原本會發生之邊緣效應(亦即，靠近基板之邊緣存在不同薄膜性質)及/或補償自動摻雜及/或前驅體耗盡。
儘管本文中闡述本發明之例示性實施方式，但應瞭解本發明並非如此受限。舉例而言，儘管結合各種特定組態描述氣體分配系統及反應器系統，但本發明未必限於此等實例。可在不脫離本發明之精神及範圍的情況下對本文中所闡述之系統及方法進行各種修改、變化及增強。
本發明之標的物包含本文中所揭示之各種系統、組件及組態，及其他特徵、功能、動作及/或性質，以及其任何及所有等效物的所有新穎且非顯而易見的組合及子組合。

Claims (20)

  1. 一種氣體分配系統，其包括：一凸緣；一或多個第一氣體膨脹通口，其形成於該凸緣內；一或多個第二氣體膨脹通口，其形成於該凸緣內；一或多個第一氣體通道，其形成於該凸緣內，其中該一或多個第一氣體通道中之每一者在該等第一氣體膨脹通口中之該一或多者中之一者處終止；及一或多個第二氣體通道，其形成於該凸緣內，其中該一或多個第二氣體通道在該等第二氣體膨脹通口中之一或多者處終止。
  2. 如申請專利範圍第1項之氣體分配系統，其中該一或多個第一氣體通道流體耦接至一前驅體源。
  3. 如申請專利範圍第2項之氣體分配系統，其中該前驅體源係選自由以下各者組成之群組：三氯矽烷、二氯矽烷、矽烷、二矽烷及三矽烷。
  4. 根據申請專利範圍第1項之氣體分配系統，其中該一或多個第二氣體通道耦接至一摻雜劑源。
  5. 如申請專利範圍第4項之氣體分配系統，其中該摻雜劑源是選自包括As、P、C、Ge及B之一或多個源。
  6. 如申請專利範圍第1項至第4項中任一項之氣體分配系統，其中該一或多個第一氣體膨脹通口中之至少一者及該一或多個第二氣體膨脹通口中之至少一者係鄰近的。
  7. 如申請專利範圍第1項至第4項中任一項之氣體分配系統，其中該一 或多個第一氣體膨脹通口中之一者及該一或多個第二氣體膨脹通口中之一者以一前後組態鄰近。
  8. 如申請專利範圍第1項至第4項中任一項之氣體分配系統，其進一步包括流體耦接至一或多個第一氣體通道中之每一者的一獨立控制閥。
  9. 如申請專利範圍第1項至第4項中任一項之氣體分配系統，其進一步包括流體耦接至該一或多個第二氣體通道中之每一者的一獨立控制閥。
  10. 如申請專利範圍第1項至第4項中任一項之氣體分配系統，其中複數個該一或多個第一氣體通道一起流體耦接於該凸緣之上游。
  11. 如申請專利範圍第1項至第4項中任一項之氣體分配系統，其中複數個該一或多個第二氣體通道一起流體耦接於該凸緣之上游。
  12. 一種氣相反應器系統，其包括：一反應室；一氣體分配系統，其包括：一凸緣；一或多個第一氣體膨脹通口，其形成於該凸緣內；一或多個第二氣體膨脹通口，其形成於該凸緣內；一或多個第一氣體通道，其形成於該凸緣內，其中該一或多個第一氣體通道中之每一者在該等第一氣體膨脹通口中之該一或多者中之一者處終止；及一或多個第二氣體通道，其形成於該凸緣內，其中該一或多個第二氣體通道在該等第二氣體膨脹通口中之一或多者處終止； 一廢氣源；一第一氣體源，其流體耦接至該一或多個第一氣體通道；及一第二氣體源，其流體耦接至該一或多個第二氣體通道。
  13. 如申請專利範圍第12項之氣相反應器，其中該氣相反應器系統包括一磊晶反應器。
  14. 如申請專利範圍第12項之氣相反應器，其中該氣相反應器系統包括一水平流反應器。
  15. 如申請專利範圍第12項之氣相反應器，其中該一或多個第一氣體膨脹通口之一數目大於或等於三個。
  16. 如申請專利範圍第15項之氣相反應器，其中該一或多個第一氣體膨脹通口之該數目大於或等於五個。
  17. 如申請專利範圍第12項至第15項中任一項之氣相反應器，其中該氣體分配系統介於一基板處置室與該反應室之間。
  18. 一種將氣相反應物提供至一基板之一表面的方法，該方法包括以下步驟：提供一氣相反應器系統，其包括：一反應室；一氣體分配系統，其包括：一凸緣；一或多個第一氣體膨脹通口，其形成於該凸緣內；一或多個第二氣體膨脹通口，其形成於該凸緣內；一或多個第一氣體通道，其形成於該凸緣內，其中該一或多 個第一氣體通道中之每一者在該等第一氣體膨脹通口中之該一或多者中之一者處終止；及一或多個第二氣體通道，其形成於該凸緣內，其中該一或多個第二氣體通道在該等第二氣體膨脹通口中之一或多者處終止；一廢氣源；一第一氣體源，其流體耦接至該一或多個第一氣體通道；及一第二氣體源，其流體耦接至該一或多個第二氣體通道；在該反應室內提供一基板；及將該基板曝露於來自該第一氣體源之一第一氣體及來自該第二氣體源之一第二氣體。
  19. 如申請專利範圍第18項之將氣相反應物提供至一基板之一表面的方法，其進一步包括以下步驟：操縱耦接至該一或多個第一氣體通道之一或多個控制閥；及操縱耦接至該一或多個第二氣體通道之一或多個控制閥。
  20. 如申請專利範圍第18項至第19項中任一項之將氣相反應物提供至一基板之一表面的方法，其進一步包括提供對來自該第一氣體源之一第一氣體及來自該第二氣體源之一第二氣體中之一或多者的一不對稱設定的步驟。
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