CN105483648A - 可变传导性气体分布装置和方法 - Google Patents

可变传导性气体分布装置和方法 Download PDF

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CN105483648A
CN105483648A CN201510765170.3A CN201510765170A CN105483648A CN 105483648 A CN105483648 A CN 105483648A CN 201510765170 A CN201510765170 A CN 201510765170A CN 105483648 A CN105483648 A CN 105483648A
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J·K·舒格鲁
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ASM Japan KK
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Abstract

公开了一种可变传导性气体分布系统、包括该可变传导性气体分布系统的反应器和系统、以及使用该可变传导性气体分布系统、反应器和系统的方法。该可变传导性气体分布系统允许对通过该气体分布系统的气流传导性的快速操控。

Description

可变传导性气体分布装置和方法
技术领域
本公开大体上涉及气相装置和方法。更具体地，本公开涉及气体分布装置、包括该装置的反应器和系统以及使用装置、反应器和系统的方法。
背景技术
诸如化学气相沉积(CVD)、等离子体增强CVD(PECVD)、原子层沉积(ALD)等的气相反应器可被用于各种应用中，包括在衬底表面上沉积和蚀刻材料。例如，气相反应器可被用于在衬底上沉积和/或蚀刻多层以形成半导体器件、平板显示设备、光伏器件、微机电系统(microelectromechanicalsystems，MEMS)等。
典型的气相反应器系统包括反应器，该反应器包括反应室、与反应室流体地耦合的一个或多个前体气体源、与反应室流体地耦合的一个或多个运载或清洗气体源、向衬底的表面传送气体(例如前体气体和/或运载或清洗气体)的气体分布系统、以及与反应室流体地耦合的排放源。
许多气体分布系统包括用于向衬底的表面分布气体的喷头组件。喷头组件典型地位于衬底上方且被设计为向衬底表面提供层流。喷头组件通常被设计为与反应室相连接来为气相反应物提供期望的滞留时间。
在衬底处理期间，清洗气体通常用于帮助从反应室移除一个或多个反应物和/或产物。例如，在典型的ALD过程期间，第一反应物(本文中也被称为前体)被引导到反应室且被允许在第一滞留时间内与衬底的表面起反应，并且利用排放系统和清洗气体将第一反应物从反应室排出。然后将第二反应物引导到反应室以在第二滞留时间内与衬底的表面起反应，该第二滞留时间可与该第一滞留时间相同或不同。然后利用排放系统和清洗气体将第二反应物从反应室排出。可重复这些步骤，直到期望量的材料被沉积在衬底表面上为止。
在清洗步骤期间，可期望允许显著更多的气体(相对于反应物)流过反应室。不幸的是，ALD和其它气相反应器与系统通常被设计为限制气体流动以优化反应物流动率和滞留时间而得到期望的膜沉积率和均匀性。因此，从反应室充分地清洗反应物或其它气体所需要的时间不期望地过长。由此衬底生产力不期望地过慢且与处理衬底相关联的成本不期望地过高。因此，期望一种允许快速清洗且具有期望的反应物流动率的改进的气相方法和装置。
发明内容
本公开的各种实施例提供了可变传导性(conductance)气体分布系统和方法。该可变传导性气体分布系统适于在多种气相过程中使用，诸如化学气相沉积过程(包括离子体增强化学气相沉积过程)、气相蚀刻过程(包括离子体增强气相蚀刻过程)、气相清洗(包括离子体增强清洗过程)、以及气相处理过程(包括离子体增强处理过程)。如在下文中更详细地描述，示例性系统和方法特别好地适用于使用多个反应物(例如以多种顺序)的过程，诸如原子层沉积过程。
根据本公开的各种实施例，可变传导性气体分布系统包括气体入口、与气体入口流体连通的第一部件和与气体入口流体连通的第二部件。第一部件和第二部件包括一个或多个特征件，该一个或多个特征件相互作用或相互啮合以控制流过可变传导性气体分布系统的气体量。根据这些实施例的各个方面，可变传导性气体分布系统进一步包括将第一部件和第二部件中的至少一个相对于另一个移动的机制以操控气体流量。例如，第一部件和第二部件可被隔开以提供较大的流体传导性(例如，用于清洗反应器的反应室)，且可被移动相互靠近或啮合以提供较小的流体传导性(例如，用于向反应室提供反应物)。一种或多种气体可在第一部件上的一个或多个特征件与第二部件上的一个或多个特征件之间从气体入口流到反应室。
根据本公开的进一步示例性实施例，一种反应器包括如本文中描述的气体分布系统。
根据本公开的另一附加示例性实施例，一种反应器系统包括如本文中描述的气体分布系统。
并且，根据本公开的又一附加示例性实施例，一种气相方法包括使用可变传导性气体分布系统。示例性方法包括以下步骤：使用可变传导性气体分布系统将第一气体(例如反应物气体)引导到反应器的反应室；相对于可变传导性气体分布系统的第二部件移动可变传导性气体分布系统的第一部件以增大可变传导性气体分布系统的流体传导性；以及使用可变传导性气体分布系统将第二气体(例如清洗气体)引导到反应器的反应室。诸如伺服电机、气动致动器、电磁螺线管、或压电致动器之类的机制可被用于相对于第二部件移动第一部件且因此操控气体流量。
前述的发明内容和接下来详细的说明书仅为示例性和说明性的，并且不对本公开或要求权利的本发明进行限制。
附图说明
通过参照结合所附说明性附图考虑的详细说明书和权利要求书，可得到对本公开的示例性实施例的更全面的理解。
图1示出了根据本公开的示例性实施例的气相反应器系统，其可变传导性气体分布系统处于打开位置。
图2示出了根据本公开的示例性实施例的气相反应器系统，其可变传导性气体分布系统处于闭合位置。
图3示出了根据本公开的示例性实施例的可变传导性气体分布系统的一部分的俯视图。
图4示出了根据本公开的进一步示例性实施例的可变传导性气体分布系统的一部分的仰视图。
图5示出了根据本公开的附加示例性实施例的处于闭合位置的可变传导性气体分布系统。
图6示出了根据本公开的另一附加示例性实施例的处于打开位置的可变传导性气体分布系统的特征。
图7示出了根据本公开的另一附加示例性实施例的处于进一步打开位置的可变传导性气体分布系统。
图8示出了根据本公开的另一进一步示例性实施例的方法。
将理解到，附图中的元件是为了简单和清晰而示出的且不一定被画出来决定比例。例如，附图中一些元件的尺寸可能相对于其它元件而被放大了以帮助改进对本公开的所示实施例的理解。
具体实施方式
以下提供的示例性实施例的描述仅为示例性的且仅旨在出于示意性的目的；以下的描述不旨在限制本公开或权利要求的范围。此外，具有所表明的特征的多个实施例的陈述不旨在排除具有附加特征的其它实施例或结合了所表明的特征的不同组合的其它实施例。
如以下更详细的描述，本公开的各种实施例涉及可变传导性气体分布系统、包括可变传导性气体分布系统的反应器和反应器系统，以及涉及使用该可变传导性气体分布系统和反应器的方法。可变传导性气体分布系统、反应器和方法可被用于多种气相过程，诸如沉积、蚀刻、清洗、和/或处理过程。
图1示出了根据本公开的示例性实施例的气相反应器系统100。系统100包括反应器102、真空源110、第一反应物气体源112、第二反应物气体源114、清洗气体源116、一个或多个流动控制单元118-122、气体入口124、以及可选的远程等离子体单元128，该反应器102包括反应室104、衬底支承件106和可变传导性气体分布系统108。尽管未示出，系统100可额外地包括直接的和/或附加的远程等离子体和/或热激发装置以用于反应室104内的一种或多种反应物。
反应器102可被用于将材料沉积在衬底126的表面上，从衬底126的表面蚀刻材料，清洗衬底126的表面，处理衬底126的表面，将材料沉积在反应室104内的表面上，清洗反应室104内的表面，蚀刻反应室104内的表面，和/或处理反应室104内的表面。反应器102可为独立的反应器或群集工具的一部分。此外，反应器102可专用于沉积、蚀刻、清洗、或处理过程，或者反应器102可被用于多种处理过程(例如，用于沉积、蚀刻、清洗和处理过程的任意组合)。作为示例，反应器102可包括通常用于化学气相沉积(CVD)过程的反应器，诸如原子层沉积(ALD)过程。
衬底支承件106被设计为在处理期间将衬底或工件126保持在位。根据一些示例性实施例，反应器102包括直接的等离子体装置；在该情况下，衬底支承件106可形成为直接等离子体回路的一部分。另外地或可选地，在处理期间，衬底支承件106可被加热、冷却、或处于环境过程温度。作为示例，可在衬底126处理期间加热衬底支承件106，使得反应器102在冷壁、热衬底配置下操作。
虽然以方框形式示出了气体入口124，但气体入口124可以是相对复杂的且被设计为在将气体混合物分布到反应室104之前将来自反应物源112，114的气体(例如蒸汽)混合和/或将来自一个或多个源116的运载/清洗气体混合。此外，气体入口124可被配置为向室104提供垂直的(如图所示)或水平的气流。在由Schmidtetal.于2012年4月10日提交的名称为“GasMixerandManifoldAssemblyforALDReactor(用于ALD反应器的气体混合器和歧管组件)”的美国专利No.8，152，922中描述了一种示例性气体分布系统，其内容通过引用结合于此，在一定程度上，其内容不与本公开冲突。气体入口可任选地包括整合的歧管(manifold)模块，其被设计为接收一种或多种气体并将该一种或多种气体分布到反应室104。在由Provencheretal.于2011年4月5日提交的名称为“HighTemperatureALDInletManifold(高温ALD入口歧管)”的美国专利No.7，918，938中公开了一种示例性整合的入口歧管模块，其内容通过引用结合于此，在一定程度上，其内容不与本公开冲突。
远程等离子体单元128可为电感耦合等离子体单元或微波远程等离子体单元。在所示的示例中，远程等离子体单元128可被用于创造在反应室104中使用的反应性或激发性物质。尽管示出系统100具有远程等离子体单元128，根据本公开的其他示例性实施例的系统不包括远程等离子体单元。除了利用远程等离子体单元128来形成激发性物质之外或者作为替代，系统100可包括另外的激发源，诸如热或热丝源、微波源等。
真空源110可包括能够在反应室104中提供期望压力的任何适当的真空源。例如，真空源110可包括单独的干式真空泵或与涡轮分子泵相结合的干式真空泵。
反应物气体源或前体112和114各自可包括一种或多种气体、或变为气态的材料，用于沉积、蚀刻、清洁、或处理过程。示例性气体源包括稀有气体液体蒸气和汽化的固体源。尽管示出有两个反应物气体源112、114，根据本公开的系统可包括任何适当数量的反应物源。
清洗气体源116包括一种或多种气体、或变为气态的材料，它们在反应器102中是相对不起反应的。示例性清洗气体包括氮气、氩气、氦气及其任意组合。虽然示出有一个清洗气体源，但根据本公开的系统可包括任何适当数量的清洗气体源。此外，一种或多种清洗气体源可提供一种或多种运载气体和/或系统100可包括另外的运载气体源以提供要与来自反应物源(诸如源112、114)的一种或多种气体混合的运载气体。
流动控制器118-122可包括用于控制气体流动的任何适当的设备。例如，流动控制器118-122可为质量流量控制器。另外，系统100可包括阀130-134以进一步控制或关闭气体源。
可变传导性气体分布系统108被配置为操控朝向衬底126在气体入口124与真空源110之间流动的气体的气体流动速率。在所示的示例中，可变传导性气体分布系统108包括第一部件136和第二部件138。第一部件136包括一个或多个特征件140-142和耦合元件158。第二部件138包括一个或多个第二特征件148-158和耦合元件160。机制162可致使第一部件136和第二部件138相对于彼此移动以增大或减小在特征件140-142和特征件148-152之间流动的气体的传导性。作为示例，机制162可致使第一部件136和第二部件130从闭合的或“0”位置移动到大约10mm的距离，或从大约0到大约6mm的距离。
用于形成第一部件136、第二部件138及其组件的材料可根据应用而改变。作为示例，第一部件136和第二部件138由镍、镀镍铝、高镍不锈钢材料，诸如哈氏合金(Hastalloyalloy)(例如c22)等而形成。
图1示出了处于“打开”、相对较高传导性位置的可变传导性气体分布系统108。在该情况下，诸如清洗气体之类的气体可在入体入口124和真空源110之间以相对较低的限制流动。图2示出了处于“闭合”、相对限制性的/低传导性位置的可变传导性气体分布系统108，这可被用于当一种或多种反应物气体(诸如来自源112和/或114的一种或多种气体)被引导至反应室104时。
图3示出了处于闭合位置的可变传导性气体分布系统108的俯视图。在所示的示例中，第一部件136的耦合元件158保持特征件140-142且可被用于同时移动特征件140-142或保持特征件140-142处于静止位置。相似地，参照图4，示出了可变传导性气体分布系统108的仰视图，第二部件138的耦合元件160保持特征件148-152且可被用于同时移动特征件148-152或保持特征件148-152处于静止位置。耦合元件136和/或耦合元件138可任选地包括使特征件与相应的耦合元件耦合的结构144，146。可变传导性气体分布系统108可包括孔302，从而即使当可变传导性气体分布系统108处于闭合位置时，亦可允许气体流过可变传导性气体分布系统108。然而，根据本公开的其它示例性可变传导性气体分布系统不包括孔。在该情况下，第一部件136的特征件和第二部件138的特征件可形成密封结构。
再次参照图1和2，可变传导性气体分布系统108的操作被示出为利用机制162来移动第一部件136，而保持第二部件138处于静止位置。然而，根据本公开的其他可变传导性气体分布系统108可移动第一部件136和第二部件138二者，或仅移动第二部件138以操控可变传导性气体分布系统108的传导性。此外，尽管特征件140-142和特征件148-152被示出为相对一致地移动(或保持静止)，可变传导性气体分布系统108的其它实施例包括单独地移动一个或多个特征件或单独地移动一个或多个部件或者一起移动它们。
特征件140-142，148-152被示出为锥形的，通常具有截头锥体形(例如剖面为截头三角形的形状)。然而，特征件140-152可具有任何适当的形状。然而，为了帮助控制气体传导性，特征件140-152可期望地包括倾斜的表面。例如，特征件的底部和特征件的顶部之间的侧壁的角度θ可从大约10度到80度或从大约30度到大约60度变动。
可变传导性气体分布系统108可包括任何适当数量的特征件。作为示例，第一部件136可包括1-10个或更多的特征件，以及第二部件138可包括1-10个或更多的特征件，与第一部件136相关联的(例如附连的)特征件通常与第二部件138的特征件交替。此外，尽管如从可变传导性气体分布系统108的顶部或底部观察到，特征件140-142，148-152在剖面上被示为同心圆或空心圆(图3和4)，特征件可包括其它适当的剖面，诸如正方形或矩形。
图5-7示出其它可变传导性气体分布系统500，包括第一特征件502-506和耦合到耦合元件512的第二特征件508-510。可变传导性气体分布系统500与可变传导性气体分布系统108相似，除了可变传导性气体分布系统500包括三个第一特征件502-506(与可变传导性气体分布系统108的两个特征件140-142相比较)和两个第二特征件508-510(与可变传导性气体分布系统108的三个特征件148-152相比较)。
图5示出了处于闭合位置的可变传导性气体分布系统500。在该位置，与可变传导性气体分布系统108相似，可变传导性气体分布系统500可允许没有(如果可变传导性气体分布系统500不包括孔)或相对较小的气体流动。如图6所示，第一部件601和第二部件604可被移开(例如，从大约0mm到大约0.3mm或从大约0.3mm到大约20mm)以允许气体在第一特征件502-506和第二特征件508-510之间流动(例如，用于将一种或多种反应物引导到反应室)。如图7所示，第一部件602和第二部件604可被进一步移开以增大可变传导性气体分布系统500的传导性(例如用于清洗过程)。
现在转向图8，示出了气相方法800。方法800包括以下步骤：使用可变传导性气体分布系统将反应物气体引导到反应器的反应室(步骤802)；相对于可变传导性气体分布系统的第二部件移动可变传导性气体分布系统的第一部件以增大可变传导性气体分布系统的流体传导性(步骤804)；以及使用可变传导性气体分布系统来将清洗气体引导到反应器的反应室(步骤806)。步骤800还可包括以下步骤：相对于第二部件移动第一部件以减小可变传导性气体分布系统的传导性(步骤808)。可以以期望的次数重复步骤802-806或802-808，例如，直到期望数量的材料被沉积、移除、清洗、或处理为止。此外，尽管示出首先引导反应物气体，方法800可适当地启始于将第一和/或第二部件移动到期望的位置和/或起始于将清洗气体引导到反应室。
虽然本文描述了本公开的示例性实施例，应理解的是本发明不限于此。例如，尽管结合多种特定配置来描述基座组件、反应器系统及方法，本发明不一定限于这些示例。可对本文所述的示例性基座组件、反应器、系统和方法作出各种修改、变化、和增强而不脱离本公开的精神和范围。
本公开的主题包括各种系统、组件、反应器、部件和配置、此处所公开的其他特征、功能、表现、和/或属性、以及其任何和全部等效方案的所有新颖和非显而易见的组合和子组合。

Claims (20)

1.一种可变传导性气体分布系统，包括：
气体入口；
具有一个或多个第一特征件的第一部件；
具有一个或多个第二特征件的第二部件；以及
使所述第一部件和所述第二部件中的至少一个相对于另一个移动以操控气体流动量的机制，
其中，当所述气体分布系统打开时，气体在所述一个或多个第一特征件和所述一个或多个第二特征件之间流动。
2.根据权利要求1所述的可变传导性气体分布系统，其特征在于，所述一个或多个第一特征件是锥形的。
3.根据权利要求1所述的可变传导性气体分布系统，其特征在于，所述一个或多个第一特征件是截头锥体形的。
4.根据权利要求1所述的可变传导性气体分布系统，其特征在于，所述一个或多个第二特征件是锥形的。
5.根据权利要求1所述的可变传导性气体分布系统，其特征在于，所述一个或多个第二特征件是截头锥体形的。
6.根据权利要求1所述的可变传导性气体分布系统，其特征在于，所述一个或多个第一特征件中的至少一个和所述一个或多个第二特征件中的至少一个是同心的。
7.根据权利要求1所述的可变传导性气体分布系统，进一步包括耦合到所述气体入口的反应物气体源。
8.根据权利要求1-7中任意一项所述的可变传导性气体分布系统，进一步包括耦合到所述气体入口的清洗气源。
9.根据权利要求1-7中任意一项所述的可变传导性气体分布系统，其特征在于，所述机制在所述气体入口接收反应物气体之前将所述第一部件和所述第二部件移动到一起。
10.根据权利要求1-7中任意一项所述的可变传导性气体分布系统，其特征在于，所述机制在所述气体入口接收清洗气体之前将所述第一部件和所述第二部件移动分开。
11.根据权利要求1-7中任意一项所述的可变传导性气体分布系统，其特征在于，所述一个或多个第一特征件与第二特征件包括允许气体流过的孔。
12.根据权利要求1-7中任意一项所述的可变传导性气体分布系统，其特征在于，所述机制使所述第一部件移动大约0到大约10mm之间的距离。
13.根据权利要求1-7中任意一项所述的可变传导性气体分布系统，进一步包括耦合到所述一个或多个第一特征件的耦合元件。
14.根据权利要求1-7中任意一项所述的可变传导性气体分布系统，进一步包括耦合到所述一个或多个第二特征件的耦合元件。
15.根据权利要求1-7中任意一项所述的可变传导性气体分布系统，其特征在于，所述第一部件包括多个同心特征件。
16.根据权利要求1-7中任意一项所述的可变传导性气体分布系统，其特征在于，所述第二部件包括多个同心特征件。
17.一种气相反应器，包括如权利要求1所述的可变传导性气体分布系统。
18.一种气相方法，所述方法包括如下步骤：
使用可变传导性气体分布系统，将反应物气体引导到反应器的反应室；
相对于所述可变传导性气体分布系统的第二部件移动所述可变传导性气体分布系统的第一部件以增大所述可变传导性气体分布系统的流体传导性；以及
使用所述可变传导性气体分布系统，将清洗气体引导到反应器的反应室。
19.根据权利要求18所述的气相方法，进一步包括以下步骤：相对于所述可变传导性气体分布系统的第二部件移动所述可变传导性气体分布系统的第一部件以减小所述可变传导性气体分布系统的流体传导性。
20.根据权利要求18-19中任意一项所述的气相方法，其特征在于，所述第一部件包括多个同心特征件。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112074938A (zh) * 2018-05-03 2020-12-11 应用材料公司 用于流动分配调谐的通用可调式阻隔板

Families Citing this family (318)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
JP6404111B2 (ja) * 2014-12-18 2018-10-10 東京エレクトロン株式会社 プラズマ処理装置
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
JP2019054189A (ja) * 2017-09-19 2019-04-04 東芝メモリ株式会社 成膜装置および成膜方法
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7214724B2 (ja) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． バッチ炉で利用されるウェハカセットを収納するための収納装置
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
JP7124098B2 (ja) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TW202409324A (zh) 2018-06-27 2024-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料之循環沉積製程
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
TWI844567B (zh) 2018-10-01 2024-06-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材保持裝置、含有此裝置之系統及其使用之方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
CN118422165A (zh) 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
KR20210089079A (ko) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 채널형 리프트 핀
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146691A (zh) * 2020-02-13 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體分配總成、噴淋板總成、及調整至反應室之氣體的傳導率之方法
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6478872B1 (en) * 1999-01-18 2002-11-12 Samsung Electronics Co., Ltd. Method of delivering gas into reaction chamber and shower head used to deliver gas
US20030019580A1 (en) * 2000-03-30 2003-01-30 Strang Eric J. Method of and apparatus for tunable gas injection in a plasma processing system
CN1643179A (zh) * 2002-01-17 2005-07-20 松德沃技术公司 Ald装置和方法
CN102917767A (zh) * 2010-05-28 2013-02-06 埃克森美孚上游研究公司 整合吸附器头以及与其相关的阀设计和变化吸附法
US20130340619A1 (en) * 2011-03-01 2013-12-26 Robert F. Tammera Apparatus and Systems Having a Reciprocating Valve Head Assembly and Swing Adsorption Processes Related Thereto

Family Cites Families (2974)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3089507A (en) 1963-05-14 Air eject system control valve
US2059480A (en) 1933-09-20 1936-11-03 John A Obermaier Thermocouple
US2161626A (en) 1937-09-25 1939-06-06 Walworth Patents Inc Locking device
US2266416A (en) 1939-01-14 1941-12-16 Western Electric Co Control apparatus
US2280778A (en) 1939-09-29 1942-04-28 John C Andersen Garden tool
US2410420A (en) 1944-01-01 1946-11-05 Robert B Bennett Scraper
US2563931A (en) 1946-04-02 1951-08-14 Honeywell Regulator Co Rate responsive thermocouple
US2660061A (en) 1949-03-05 1953-11-24 Dominion Eng Works Ltd Immersion type thermocouple temperature measuring device
US2745640A (en) 1953-09-24 1956-05-15 American Viscose Corp Heat exchanging apparatus
GB752277A (en) 1953-10-28 1956-07-11 Canadian Ind 1954 Ltd Improved thermocouple unit
US3094396A (en) 1959-07-07 1963-06-18 Continental Can Co Method of and apparatus for curing internal coatings on can bodies
US2990045A (en) 1959-09-18 1961-06-27 Lipe Rollway Corp Thermally responsive transmission for automobile fan
US3038951A (en) 1961-01-19 1962-06-12 Leeds & Northrup Co Fast acting totally expendable immersion thermocouple
US3232437A (en) 1963-03-13 1966-02-01 Champlon Lab Inc Spin-on filter cartridge
US3410349A (en) 1964-01-02 1968-11-12 Ted R. Troutman Tubing scraper and method
US3263502A (en) 1964-01-21 1966-08-02 Redwood L Springfield Multiple thermocouple support
FR1408266A (fr) 1964-06-30 1965-08-13 Realisations Electr Et Electro Prise de raccordement pour thermocouples
US3588192A (en) 1969-06-02 1971-06-28 Trw Inc Hydraulic skid control system
US3647387A (en) 1970-03-19 1972-03-07 Stanford Research Inst Detection device
US3647716A (en) 1970-04-03 1972-03-07 Westvaco Corp Transport reactor with a venturi tube connection to a combustion chamber for producing activated carbon
US4393013A (en) 1970-05-20 1983-07-12 J. C. Schumacher Company Vapor mass flow control system
US3713899A (en) 1970-11-12 1973-01-30 Ford Motor Co Thermocouple probe
US3885504A (en) 1971-01-09 1975-05-27 Max Baermann Magnetic stabilizing or suspension system
US3718429A (en) 1971-03-15 1973-02-27 Du Pont No-no2 analyzer
CA1002299A (en) 1971-06-24 1976-12-28 William H. Trembley Installation tool
US3833492A (en) 1971-09-22 1974-09-03 Pollution Control Ind Inc Method of producing ozone
US3862397A (en) 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
FR2181175A5 (zh) 1972-04-20 1973-11-30 Commissariat Energie Atomique
JPS5132766B2 (zh) 1972-07-25 1976-09-14
JPS5539903B2 (zh) 1972-10-19 1980-10-14
DE7242602U (zh) 1972-11-20 1976-04-29 Hoogovens Ijmuiden B.V., Ijmuiden (Niederlande)
DE2427992A1 (de) 1973-06-13 1975-03-13 Thermal Syndicate Ltd Verfahren zum messen hoher temperaturen mit thermoelementen
US3854443A (en) 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
DE2407133B2 (de) 1974-02-15 1976-12-09 Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn Verfahren und vorrichtung zur bestimmung von stickoxid
US3904371A (en) 1974-03-04 1975-09-09 Beckman Instruments Inc Chemiluminescent ammonia detection
SU494614A1 (ru) 1974-05-05 1975-12-05 Специальное Проектно-Конструкторское Бюро "Главнефтеснабсбыта" Усср Устройство дистанционного измерени уровн жидкости
US3997638A (en) 1974-09-18 1976-12-14 Celanese Corporation Production of metal ion containing carbon fibers useful in electron shielding applications
US3887790A (en) 1974-10-07 1975-06-03 Vernon H Ferguson Wrap-around electric resistance heater
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US4054071A (en) 1975-06-17 1977-10-18 Aetna-Standard Engineering Company Flying saw with movable work shifter
DE2610556C2 (de) 1976-03-12 1978-02-02 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Verteilen strömender Medien über einen Strömungsquerschnitt
USD249341S (en) 1976-11-11 1978-09-12 Umc Industries, Inc. Electro-mechanical pulser
US4194536A (en) 1976-12-09 1980-03-25 Eaton Corporation Composite tubing product
US4181330A (en) 1977-03-22 1980-01-01 Noriatsu Kojima Horn shaped multi-inlet pipe fitting
US4164959A (en) * 1977-04-15 1979-08-21 The Salk Institute For Biological Studies Metering valve
US4176630A (en) 1977-06-01 1979-12-04 Dynair Limited Automatic control valves
US4126027A (en) 1977-06-03 1978-11-21 Westinghouse Electric Corp. Method and apparatus for eccentricity correction in a rolling mill
US4145699A (en) 1977-12-07 1979-03-20 Bell Telephone Laboratories, Incorporated Superconducting junctions utilizing a binary semiconductor barrier
US4217463A (en) 1978-03-13 1980-08-12 National Distillers And Chemical Corporation Fast responsive, high pressure thermocouple
US4234449A (en) 1979-05-30 1980-11-18 The United States Of America As Represented By The United States Department Of Energy Method of handling radioactive alkali metal waste
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US4322592A (en) 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4355912A (en) 1980-09-12 1982-10-26 Haak Raymond L Spring loaded sensor fitting
US4479831A (en) 1980-09-15 1984-10-30 Burroughs Corporation Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment
US4333735A (en) 1981-03-16 1982-06-08 Exxon Research & Engineering Co. Process and apparatus for measuring gaseous fixed nitrogen species
US4466766A (en) 1981-05-20 1984-08-21 Ruska Instrument Corporation Transfer apparatus
JPS5819462A (ja) 1981-07-24 1983-02-04 Kawasaki Steel Corp 電縫溶接鋼管
US4436674A (en) 1981-07-30 1984-03-13 J.C. Schumacher Co. Vapor mass flow control system
US4414492A (en) 1982-02-02 1983-11-08 Intent Patent A.G. Electronic ballast system
FR2529714A1 (fr) 1982-07-01 1984-01-06 Commissariat Energie Atomique Procede de realisation de l'oxyde de champ d'un circuit integre
US4401507A (en) 1982-07-14 1983-08-30 Advanced Semiconductor Materials/Am. Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions
US4454370A (en) 1982-09-07 1984-06-12 Wahl Instruments, Inc. Thermocouple surface probe
US4444990A (en) 1982-09-08 1984-04-24 Servo Corporation Of America Heat sensing device
JPS5945900U (ja) 1982-09-17 1984-03-27 住友電気工業株式会社 高周波誘導プラズマ用ト−チ
US4512113A (en) 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation
US4499354A (en) 1982-10-06 1985-02-12 General Instrument Corp. Susceptor for radiant absorption heater system
US4570328A (en) 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
JPS59211779A (ja) 1983-05-14 1984-11-30 Toshiba Corp 圧縮機
US4548688A (en) 1983-05-23 1985-10-22 Fusion Semiconductor Systems Hardening of photoresist
US4537001A (en) 1983-05-23 1985-08-27 Uppstroem Leif R Building elements
JPS6050923A (ja) 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
USD288556S (en) 1984-02-21 1987-03-03 Pace, Incorporated Ornamental design for a frame of circuit elements utilized to replace damaged elements on printed circuit boards
US4735259A (en) 1984-02-21 1988-04-05 Hewlett-Packard Company Heated transfer line for capillary tubing
US5259881A (en) 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
US4527005A (en) 1984-03-13 1985-07-02 The United States Of America As Represented By The United States Department Of Energy Spring loaded thermocouple module
US4724272A (en) 1984-04-17 1988-02-09 Rockwell International Corporation Method of controlling pyrolysis temperature
US4575636A (en) 1984-04-30 1986-03-11 Rca Corporation Deep ultraviolet (DUV) flood exposure system
US4611966A (en) 1984-05-30 1986-09-16 Johnson Lester R Apparatus for transferring semiconductor wafers
US4590326A (en) 1984-06-14 1986-05-20 Texaco Inc. Multi-element thermocouple
JPS6138863A (ja) 1984-07-30 1986-02-24 Toshiba Corp 研磨装置
US4579378A (en) 1984-10-31 1986-04-01 Snyders Robert V Mortar joint pointing guide
JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US4620998A (en) 1985-02-05 1986-11-04 Haresh Lalvani Crescent-shaped polygonal tiles
US4653541A (en) 1985-06-26 1987-03-31 Parker Hannifin Corporation Dual wall safety tube
US4789294A (en) 1985-08-30 1988-12-06 Canon Kabushiki Kaisha Wafer handling apparatus and method
US4664769A (en) 1985-10-28 1987-05-12 International Business Machines Corporation Photoelectric enhanced plasma glow discharge system and method including radiation means
JPH0651909B2 (ja) 1985-12-28 1994-07-06 キヤノン株式会社 薄膜多層構造の形成方法
KR940000915B1 (ko) 1986-01-31 1994-02-04 가부시기가이샤 히다찌세이사꾸쇼 표면 처리방법
US4654226A (en) 1986-03-03 1987-03-31 The University Of Delaware Apparatus and method for photochemical vapor deposition
US4722298A (en) 1986-05-19 1988-02-02 Machine Technology, Inc. Modular processing apparatus for processing semiconductor wafers
US4718637A (en) 1986-07-02 1988-01-12 Mdc Vacuum Products Corporation High vacuum gate valve having improved metal vacuum joint
US4681134A (en) 1986-07-23 1987-07-21 Paris Sr Raymond L Valve lock
US5183511A (en) 1986-07-23 1993-02-02 Semiconductor Energy Laboratory Co., Ltd. Photo CVD apparatus with a glow discharge system
US4721533A (en) 1986-08-01 1988-01-26 System Planning Corporation Protective structure for an immersion pyrometer
US4749416A (en) 1986-08-01 1988-06-07 System Planning Corporation Immersion pyrometer with protective structure for sidewall use
US4882199A (en) 1986-08-15 1989-11-21 Massachusetts Institute Of Technology Method of forming a metal coating on a substrate
USD311126S (en) 1986-12-23 1990-10-09 Joseph Crowley Shelf extending mounting bracket for additional product display
US4753856A (en) 1987-01-02 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from silicate esters and metal oxides
SU1408319A1 (ru) 1987-01-06 1988-07-07 Всесоюзный научно-исследовательский институт аналитического приборостроения Хемилюминесцентный газоанализатор окислов азота
US4753192A (en) 1987-01-08 1988-06-28 Btu Engineering Corporation Movable core fast cool-down furnace
US4976996A (en) 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US4821674A (en) 1987-03-31 1989-04-18 Deboer Wiebe B Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US5198034A (en) 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4780169A (en) 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
US4827430A (en) 1987-05-11 1989-05-02 Baxter International Inc. Flow measurement system
US5221556A (en) 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
NO161941C (no) 1987-06-25 1991-04-30 Kvaerner Eng Fremgangsmaate ved og anlegg for transport av hydrokarboner over lang avstand fra en hydrokarbonkilde til havs.
US4837113A (en) 1987-07-16 1989-06-06 Texas Instruments Incorporated Method for depositing compound from group II-VI
US5062386A (en) 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
USD327534S (en) 1987-07-30 1992-06-30 CLM Investments, Inc. Floor drain strainer
US4854263B1 (en) 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
JPH0777211B2 (ja) 1987-08-19 1995-08-16 富士通株式会社 アッシング方法
US4756794A (en) 1987-08-31 1988-07-12 The United States Of America As Represented By The Secretary Of The Navy Atomic layer etching
US4854266A (en) 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
US4916091A (en) 1987-11-05 1990-04-10 Texas Instruments Incorporated Plasma and plasma UV deposition of SiO2
JPH01165766A (ja) * 1987-12-22 1989-06-29 Seiko Epson Corp 反応性スパッタリング成膜法
JPH0648217B2 (ja) 1987-12-24 1994-06-22 川惣電機工業株式会社 溶融金属の連続測温装置
US4830515A (en) 1987-12-28 1989-05-16 Omega Engineering, Inc. Mounting clip for a thermocouple assembly
US5028366A (en) 1988-01-12 1991-07-02 Air Products And Chemicals, Inc. Water based mold release compositions for making molded polyurethane foam
FR2628985B1 (fr) 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a paroi protegee contre les depots
US5069591A (en) 1988-03-24 1991-12-03 Tel Sagami Limited Semiconductor wafer-processing apparatus
US4978567A (en) 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
JP2859632B2 (ja) 1988-04-14 1999-02-17 キヤノン株式会社 成膜装置及び成膜方法
US4857382A (en) 1988-04-26 1989-08-15 General Electric Company Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides
US4949848A (en) 1988-04-29 1990-08-21 Fluoroware, Inc. Wafer carrier
JPH01296613A (ja) 1988-05-25 1989-11-30 Nec Corp ３−ｖ族化合物半導体の気相成長方法
US5178682A (en) 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
IT1227708B (it) 1988-07-29 1991-05-06 Pomini Farrel Spa Dispositivo di rilevamento della temperatura del materiale contenuto entro un apparecchio chiuso.
US4986215A (en) 1988-09-01 1991-01-22 Kyushu Electronic Metal Co., Ltd. Susceptor for vapor-phase growth system
US5158128A (en) 1988-09-01 1992-10-27 Sumitec, Inc. Thermocouple for a continuous casting machine
JPH0293071A (ja) 1988-09-29 1990-04-03 Toshiba Corp 薄膜の形成方法
JP2918892B2 (ja) 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US4837185A (en) 1988-10-26 1989-06-06 Intel Corporation Pulsed dual radio frequency CVD process
DE3836696C1 (en) 1988-10-28 1989-12-07 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Lock for transporting material between clean rooms
US5119760A (en) 1988-12-27 1992-06-09 Symetrix Corporation Methods and apparatus for material deposition
US5084126A (en) 1988-12-29 1992-01-28 Texas Instruments Incorporated Method and apparatus for uniform flow distribution in plasma reactors
JPH02185038A (ja) 1989-01-11 1990-07-19 Nec Corp 熱処理装置
JPH0834187B2 (ja) 1989-01-13 1996-03-29 東芝セラミックス株式会社 サセプタ
US5053247A (en) 1989-02-28 1991-10-01 Moore Epitaxial, Inc. Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby
US4934831A (en) 1989-03-20 1990-06-19 Claud S. Gordon Company Temperature sensing device
US5194401A (en) 1989-04-18 1993-03-16 Applied Materials, Inc. Thermally processing semiconductor wafers at non-ambient pressures
JP2543224B2 (ja) 1989-04-25 1996-10-16 松下電子工業株式会社 半導体装置とその製造方法
US5192717A (en) 1989-04-28 1993-03-09 Canon Kabushiki Kaisha Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method
US5360269A (en) 1989-05-10 1994-11-01 Tokyo Kogyo Kabushiki Kaisha Immersion-type temperature measuring apparatus using thermocouple
US4987856A (en) 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
US5061083A (en) 1989-06-19 1991-10-29 The United States Of America As Represented By The Department Of Energy Temperature monitoring device and thermocouple assembly therefor
JP2890494B2 (ja) 1989-07-11 1999-05-17 セイコーエプソン株式会社 プラズマ薄膜の製造方法
US5060322A (en) 1989-07-27 1991-10-29 Delepine Jean C Shower room and ceiling element, especially for a shower room
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
US5213650A (en) 1989-08-25 1993-05-25 Applied Materials, Inc. Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
US5057436A (en) 1989-10-02 1991-10-15 Agmaster, Inc. Method and apparatus for detecting toxic gases
US5098865A (en) 1989-11-02 1992-03-24 Machado Jose R High step coverage silicon oxide thin films
JPH03155625A (ja) 1989-11-14 1991-07-03 Seiko Epson Corp プラズマｃｖｄ膜の製造方法
US5002632A (en) 1989-11-22 1991-03-26 Texas Instruments Incorporated Method and apparatus for etching semiconductor materials
EP0454846B1 (en) 1989-11-22 1996-09-11 Nippon Steel Corporation Thermocouple-type temperature sensor and method of measuring temperature of molten steel
JP2936623B2 (ja) 1990-02-26 1999-08-23 日本電気株式会社 半導体装置の製造方法
LU87693A1 (fr) 1990-03-07 1991-10-08 Wurth Paul Sa Sonde de prise d'echantillons gazeux et de mesures thermiques dans un four a cuve
JPH03277774A (ja) 1990-03-27 1991-12-09 Semiconductor Energy Lab Co Ltd 光気相反応装置
DE4011933C2 (de) 1990-04-12 1996-11-21 Balzers Hochvakuum Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür
US5243202A (en) 1990-04-25 1993-09-07 Casio Computer Co., Ltd. Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type
US5356672A (en) 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
CA2016970A1 (en) 1990-05-16 1991-11-16 Prasad N. Gadgil Inverted diffusion stagnation point flow reactor for vapor deposition of thin films
JPH0429313A (ja) 1990-05-24 1992-01-31 Fujitsu Ltd 半導体結晶の製造装置
US5130003A (en) 1990-06-14 1992-07-14 Conrad Richard H method of powering corona discharge in ozone generators
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
JPH0464025A (ja) 1990-07-02 1992-02-28 Matsushita Electric Ind Co Ltd 調理器用温度センサー
US5314570A (en) 1990-07-18 1994-05-24 Sumitomo Electric Industries Ltd. Process and apparatus for the production of diamond
KR0176715B1 (ko) 1990-07-30 1999-04-15 오가 노리오 드라이에칭방법
US5082517A (en) 1990-08-23 1992-01-21 Texas Instruments Incorporated Plasma density controller for semiconductor device processing equipment
JPH04115531A (ja) 1990-09-05 1992-04-16 Mitsubishi Electric Corp 化学気相成長装置
US5273609A (en) 1990-09-12 1993-12-28 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
US5167716A (en) 1990-09-28 1992-12-01 Gasonics, Inc. Method and apparatus for batch processing a semiconductor wafer
JP2780866B2 (ja) 1990-10-11 1998-07-30 大日本スクリーン製造 株式会社 光照射加熱基板の温度測定装置
TW214599B (zh) 1990-10-15 1993-10-11 Seiko Epson Corp
JP2714247B2 (ja) 1990-10-29 1998-02-16 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する方法及び装置
US5228114A (en) 1990-10-30 1993-07-13 Tokyo Electron Sagami Limited Heat-treating apparatus with batch scheme having improved heat controlling capability
EP0491976B1 (de) 1990-12-21 2000-10-25 Siemens Aktiengesellschaft Verfahren zur Herstellung einer mit Arsen dotierten glatten polykristallinen Siliziumschicht für höchstintegrierte Schaltungen
US5071258A (en) 1991-02-01 1991-12-10 Vesuvius Crucible Company Thermocouple assembly
JPH05136218A (ja) 1991-02-19 1993-06-01 Tokyo Electron Yamanashi Kk 検査装置
JP2740050B2 (ja) 1991-03-19 1998-04-15 株式会社東芝 溝埋込み配線形成方法
JP3323530B2 (ja) 1991-04-04 2002-09-09 株式会社日立製作所 半導体装置の製造方法
US5116018A (en) 1991-04-12 1992-05-26 Automax, Inc. Lockout modules
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
US5104514A (en) 1991-05-16 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Protective coating system for aluminum
US6095083A (en) 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
JPH0523079A (ja) 1991-07-19 1993-02-02 Shimano Inc 釣り竿及びその製造方法
US5137286A (en) 1991-08-23 1992-08-11 General Electric Company Permanent magnet floating shaft seal
JP3040212B2 (ja) 1991-09-05 2000-05-15 株式会社東芝 気相成長装置
US5294778A (en) 1991-09-11 1994-03-15 Lam Research Corporation CVD platen heater system utilizing concentric electric heating elements
US5154301A (en) 1991-09-12 1992-10-13 Fluoroware, Inc. Wafer carrier
EP0533568A1 (en) 1991-09-17 1993-03-24 Sumitomo Electric Industries, Ltd. Superconducting thin film formed of oxide superconductor material, superconducting device utilizing the superconducting thin film and method for manufacturing thereof
JPH05118928A (ja) 1991-10-25 1993-05-14 Tokyo Electron Ltd 接触式の温度測定方法
JP3140111B2 (ja) 1991-11-19 2001-03-05 オリンパス光学工業株式会社 高倍率顕微鏡対物レンズ
US5199603A (en) 1991-11-26 1993-04-06 Prescott Norman F Delivery system for organometallic compounds
JPH05171446A (ja) 1991-12-24 1993-07-09 Furukawa Electric Co Ltd:The 薄膜形成方法
US5414221A (en) 1991-12-31 1995-05-09 Intel Corporation Embedded ground plane and shielding structures using sidewall insulators in high frequency circuits having vias
US6379466B1 (en) 1992-01-17 2002-04-30 Applied Materials, Inc. Temperature controlled gas distribution plate
US5215588A (en) 1992-01-17 1993-06-01 Amtech Systems, Inc. Photo-CVD system
US5480818A (en) 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
JP2506539B2 (ja) 1992-02-27 1996-06-12 株式会社ジーティシー 絶縁膜の形成方法
NL9200446A (nl) 1992-03-10 1993-10-01 Tempress B V Inrichting voor het behandelen van microschakeling-schijven (wafers).
US5226383A (en) 1992-03-12 1993-07-13 Bell Communications Research, Inc. Gas foil rotating substrate holder
JPH05267186A (ja) 1992-03-18 1993-10-15 Fujitsu Ltd 気相成長装置および該装置を用いた気相成長方法
JP3191392B2 (ja) 1992-04-07 2001-07-23 神鋼電機株式会社 クリーンルーム用密閉式コンテナ
US5455069A (en) 1992-06-01 1995-10-03 Motorola, Inc. Method of improving layer uniformity in a CVD reactor
KR100293830B1 (ko) 1992-06-22 2001-09-17 리차드 에이치. 로브그렌 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법
US5534072A (en) 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3148004B2 (ja) 1992-07-06 2001-03-19 株式会社東芝 光ｃｖｄ装置及びこれを用いた半導体装置の製造方法
US5601641A (en) 1992-07-21 1997-02-11 Tse Industries, Inc. Mold release composition with polybutadiene and method of coating a mold core
US5306666A (en) 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
JPH0653210A (ja) 1992-07-28 1994-02-25 Nec Corp 半導体装置
KR100304127B1 (ko) 1992-07-29 2001-11-30 이노마다 시게오 가반식 밀폐 컨테이너를 사용한 전자기판 처리시스템과 그의 장치
ES2078718T3 (es) 1992-08-04 1995-12-16 Ibm Estructuras de cadenas de fabricacion a base de transportadores totalmente automatizados e informatizados adaptados a recipientes transportables estancos a presion.
US5271967A (en) 1992-08-21 1993-12-21 General Motors Corporation Method and apparatus for application of thermal spray coatings to engine blocks
USD363464S (en) 1992-08-27 1995-10-24 Tokyo Electron Yamanashi Limited Electrode for a semiconductor processing apparatus
US5338362A (en) 1992-08-29 1994-08-16 Tokyo Electron Limited Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments
US5326427A (en) 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
US5246218A (en) 1992-09-25 1993-09-21 Intel Corporation Apparatus for securing an automatically loaded wafer cassette on a wafer processing equipment
US6438502B1 (en) 1992-10-07 2002-08-20 Dallas Semiconductor Corporation Environmental condition sensor device and method
JP3093487B2 (ja) 1992-10-28 2000-10-03 松下電子工業株式会社 半導体装置およびその製造方法
US6235858B1 (en) 1992-10-30 2001-05-22 Ppg Industries Ohio, Inc. Aminoplast curable film-forming compositions providing films having resistance to acid etching
JPH06295862A (ja) 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
IT1257434B (it) 1992-12-04 1996-01-17 Cselt Centro Studi Lab Telecom Generatore di vapori per impianti di deposizione chimica da fase vapore
KR100238629B1 (ko) 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
DE4244189C2 (de) 1992-12-24 1995-06-01 Busch Dieter & Co Prueftech Anlegetemperaturfühler
US5453124A (en) 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US5326722A (en) 1993-01-15 1994-07-05 United Microelectronics Corporation Polysilicon contact
US5447294A (en) 1993-01-21 1995-09-05 Tokyo Electron Limited Vertical type heat treatment system
US5444217A (en) 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
JPH06319177A (ja) 1993-02-24 1994-11-15 Hewlett Packard Co <Hp> 適応遠隔制御システム
US5421893A (en) 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
JP3348936B2 (ja) 1993-10-21 2002-11-20 東京エレクトロン株式会社 縦型熱処理装置
JP3265042B2 (ja) 1993-03-18 2002-03-11 東京エレクトロン株式会社 成膜方法
US5305417A (en) 1993-03-26 1994-04-19 Texas Instruments Incorporated Apparatus and method for determining wafer temperature using pyrometry
DE4311197A1 (de) 1993-04-05 1994-10-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zum Betreiben einer inkohärent strahlenden Lichtquelle
ATE204491T1 (de) 1993-04-17 2001-09-15 Messer Griesheim Austria Ges M Gerät zur kontrollierten zudosierung von no zur atemluft von patienten
JPH06310438A (ja) 1993-04-22 1994-11-04 Mitsubishi Electric Corp 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置
US5404082A (en) 1993-04-23 1995-04-04 North American Philips Corporation High frequency inverter with power-line-controlled frequency modulation
USD353452S (en) 1993-04-27 1994-12-13 Groenhoff Larry C Window adapter for portable box fans
JP2508581B2 (ja) 1993-05-28 1996-06-19 日本電気株式会社 化学気相成長法
US5501740A (en) 1993-06-04 1996-03-26 Applied Science And Technology, Inc. Microwave plasma reactor
US5354580A (en) 1993-06-08 1994-10-11 Cvd Incorporated Triangular deposition chamber for a vapor deposition system
US5616264A (en) 1993-06-15 1997-04-01 Tokyo Electron Limited Method and apparatus for controlling temperature in rapid heat treatment system
JPH0799162A (ja) 1993-06-21 1995-04-11 Hitachi Ltd Ｃｖｄリアクタ装置
DE69415408T2 (de) 1993-06-28 1999-06-10 Canon K.K., Tokio/Tokyo Wärmeerzeugender, TaNO.8 enthaltender Widerstand, Substrat mit diesem wärmeerzeugenden Widerstand für Flüssigkeitsstrahlkopf, Flüssigkeitsstrahlkopf mit diesem Substrat, und Gerät für einen Flüssigkeitsstrahl mit diesem Flüssigkeitsstrahlkopf
US5997768A (en) 1993-06-29 1999-12-07 Ciba Specialty Chemicals Corporation Pelletization of metal soap powders
US5484484A (en) 1993-07-03 1996-01-16 Tokyo Electron Kabushiki Thermal processing method and apparatus therefor
JPH0729836A (ja) 1993-07-14 1995-01-31 Sony Corp プラズマシリコンナイトライド膜の形成方法
JP3667781B2 (ja) 1993-07-16 2005-07-06 株式会社日立製作所 エンジンシステムの診断装置
US5415753A (en) 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US5348774A (en) 1993-08-11 1994-09-20 Alliedsignal Inc. Method of rapidly densifying a porous structure
JPH07109576A (ja) 1993-10-07 1995-04-25 Shinko Seiki Co Ltd プラズマｃｖｄによる成膜方法
US6122036A (en) 1993-10-21 2000-09-19 Nikon Corporation Projection exposure apparatus and method
JP2682403B2 (ja) 1993-10-29 1997-11-26 日本電気株式会社 半導体装置の製造方法
US5413813A (en) 1993-11-23 1995-05-09 Enichem S.P.A. CVD of silicon-based ceramic materials on internal surface of a reactor
US5463176A (en) 1994-01-03 1995-10-31 Eckert; C. Edward Liquid waste oxygenation
JPH07209093A (ja) 1994-01-20 1995-08-11 Tokyo Electron Ltd 温度計
US5616947A (en) 1994-02-01 1997-04-01 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an MIS structure
US5681779A (en) 1994-02-04 1997-10-28 Lsi Logic Corporation Method of doping metal layers for electromigration resistance
JPH07225214A (ja) 1994-02-14 1995-08-22 Shimadzu Corp ＮＯｘ計測装置
US5589002A (en) 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JP3211548B2 (ja) 1994-03-30 2001-09-25 ウシオ電機株式会社 誘電体バリア放電蛍光ランプ
JPH07283149A (ja) 1994-04-04 1995-10-27 Nissin Electric Co Ltd 薄膜気相成長装置
JPH07297271A (ja) 1994-04-22 1995-11-10 Shinko Electric Co Ltd 異サイズのウェ−ハカセットを任意に支持可能な支持機構
US5431734A (en) 1994-04-28 1995-07-11 International Business Machines Corporation Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control
US6447232B1 (en) 1994-04-28 2002-09-10 Semitool, Inc. Semiconductor wafer processing apparatus having improved wafer input/output handling system
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
JP3181171B2 (ja) 1994-05-20 2001-07-03 シャープ株式会社 気相成長装置および気相成長方法
KR0144956B1 (ko) 1994-06-10 1998-08-17 김광호 반도체 장치의 배선 구조 및 그 형성방법
KR100306527B1 (ko) 1994-06-15 2002-06-26 구사마 사부로 박막반도체장치의제조방법,박막반도체장치
US5423942A (en) 1994-06-20 1995-06-13 Texas Instruments Incorporated Method and apparatus for reducing etching erosion in a plasma containment tube
US5504042A (en) 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
JP2709568B2 (ja) 1994-06-30 1998-02-04 日本プレシジョン・サーキッツ株式会社 ダウンフロー型スピンドライヤ
US6022414A (en) 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5730801A (en) 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US5669713A (en) 1994-09-27 1997-09-23 Rosemount Inc. Calibration of process control temperature transmitter
JP3632256B2 (ja) 1994-09-30 2005-03-23 株式会社デンソー 窒化シリコン膜を有する半導体装置の製造方法
US5514439A (en) 1994-10-14 1996-05-07 Sibley; Thomas Wafer support fixtures for rapid thermal processing
US5576629A (en) 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
JP2845163B2 (ja) 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
JPH10508964A (ja) 1994-11-08 1998-09-02 バーミア、テクノロジーズ、インコーポレーテッド 料金設定機能を有するオンラインサービス開発ツール
US6699530B2 (en) 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
US5583736A (en) 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
FI100409B (fi) 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI97730C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
FI97731C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
JPH08181135A (ja) 1994-12-22 1996-07-12 Sharp Corp 半導体装置の製造方法
US5716133A (en) 1995-01-17 1998-02-10 Applied Komatsu Technology, Inc. Shielded heat sensor for measuring temperature
US5586585A (en) 1995-02-27 1996-12-24 Asyst Technologies, Inc. Direct loadlock interface
JP3151118B2 (ja) 1995-03-01 2001-04-03 東京エレクトロン株式会社 熱処理装置
US5518549A (en) 1995-04-18 1996-05-21 Memc Electronic Materials, Inc. Susceptor and baffle therefor
JP3360098B2 (ja) 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
US5852879A (en) 1995-04-26 1998-12-29 Schumaier; Daniel R. Moisture sensitive item drying appliance
SE506163C2 (sv) 1995-04-27 1997-11-17 Ericsson Telefon Ab L M Anordning vid ett kiselsubstrat med ett urtag för upptagande av ett element jämte förfarande för framställande av en dylik anordning
US5761328A (en) 1995-05-22 1998-06-02 Solberg Creations, Inc. Computer automated system and method for converting source-documents bearing alphanumeric text relating to survey measurements
US5708825A (en) 1995-05-26 1998-01-13 Iconovex Corporation Automatic summary page creation and hyperlink generation
US5540898A (en) 1995-05-26 1996-07-30 Vasogen Inc. Ozone generator with in-line ozone sensor
US5663899A (en) 1995-06-05 1997-09-02 Advanced Micro Devices Redundant thermocouple
US5683517A (en) * 1995-06-07 1997-11-04 Applied Materials, Inc. Plasma reactor with programmable reactant gas distribution
US6190634B1 (en) 1995-06-07 2001-02-20 President And Fellows Of Harvard College Carbide nanomaterials
US5982931A (en) 1995-06-07 1999-11-09 Ishimaru; Mikio Apparatus and method for the manipulation of image containing documents
JPH08335558A (ja) 1995-06-08 1996-12-17 Nissin Electric Co Ltd 薄膜気相成長装置
JP3380091B2 (ja) 1995-06-09 2003-02-24 株式会社荏原製作所 反応ガス噴射ヘッド及び薄膜気相成長装置
US5685912A (en) 1995-06-20 1997-11-11 Sony Corporation Pressure control system for semiconductor manufacturing equipment
USD392855S (en) 1995-06-26 1998-03-31 Pillow Daryl R Floor protection template for use while spray-painting door frames
US20020114886A1 (en) 1995-07-06 2002-08-22 Applied Materials, Inc. Method of tisin deposition using a chemical vapor deposition process
TW294820B (en) 1995-07-10 1997-01-01 Watkins Johnson Co Gas distribution apparatus
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
NO953217L (no) 1995-08-16 1997-02-17 Aker Eng As Metode og innretning ved rörbunter
JPH0964149A (ja) 1995-08-29 1997-03-07 Hitachi Electron Eng Co Ltd 半導体製造装置
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
JP3504784B2 (ja) 1995-09-07 2004-03-08 東京エレクトロン株式会社 熱処理方法
TW371796B (en) 1995-09-08 1999-10-11 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing a semiconductor device
JPH0989676A (ja) 1995-09-21 1997-04-04 Casio Comput Co Ltd 電子体温計
US5791782A (en) 1995-09-21 1998-08-11 Fusion Systems Corporation Contact temperature probe with unrestrained orientation
DE19535178C2 (de) 1995-09-22 2001-07-19 Jenoptik Jena Gmbh Einrichtung zum Ver- und Entriegeln einer Tür eines Behälters
US5997588A (en) 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
DE29517100U1 (de) 1995-10-17 1997-02-13 Zimmer, Johannes, Klagenfurt Strömungsteilungs- und -umformungskörper
TW356554B (en) 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
US5801104A (en) 1995-10-24 1998-09-01 Micron Technology, Inc. Uniform dielectric film deposition on textured surfaces
US6299404B1 (en) 1995-10-27 2001-10-09 Brooks Automation Inc. Substrate transport apparatus with double substrate holders
KR100201386B1 (ko) 1995-10-28 1999-06-15 구본준 화학기상증착장비의 반응가스 분사장치
IL115931A0 (en) 1995-11-09 1996-01-31 Oramir Semiconductor Ltd Laser stripping improvement by modified gas composition
US5736314A (en) 1995-11-16 1998-04-07 Microfab Technologies, Inc. Inline thermo-cycler
JPH09148322A (ja) 1995-11-22 1997-06-06 Sharp Corp シリコン酸化膜の成膜方法及びプラズマｃｖｄ成膜装置
US5796074A (en) 1995-11-28 1998-08-18 Applied Materials, Inc. Wafer heater assembly
JPH09172055A (ja) 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
US5954375A (en) 1995-12-21 1999-09-21 Edstrom Industries, Inc. Sanitary fitting having ferrule with grooved undercut
US5697706A (en) 1995-12-26 1997-12-16 Chrysler Corporation Multi-point temperature probe
KR100267418B1 (ko) 1995-12-28 2000-10-16 엔도 마코토 플라스마처리방법및플라스마처리장치
US5679215A (en) 1996-01-02 1997-10-21 Lam Research Corporation Method of in situ cleaning a vacuum plasma processing chamber
US6017818A (en) 1996-01-22 2000-01-25 Texas Instruments Incorporated Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density
US5632919A (en) 1996-01-25 1997-05-27 T.G.M., Inc. Temperature controlled insulation system
US5786027A (en) 1996-02-14 1998-07-28 Micron Technology, Inc. Method for depositing polysilicon with discontinuous grain boundaries
SE9600705D0 (sv) 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5837320A (en) 1996-02-27 1998-11-17 The University Of New Mexico Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands
US5656093A (en) 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
US5732744A (en) 1996-03-08 1998-03-31 Control Systems, Inc. Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components
DE19609678C2 (de) 1996-03-12 2003-04-17 Infineon Technologies Ag Speicherzellenanordnung mit streifenförmigen, parallel verlaufenden Gräben und vertikalen MOS-Transistoren und Verfahren zu deren Herstellung
USD411516S (en) 1996-03-15 1999-06-29 Tokyo Electron Limited Gas diffusion plate for electrode of semiconductor wafer processing apparatus
USD380527S (en) 1996-03-19 1997-07-01 Cherle Velez Sink drain shield
DE69732722T2 (de) 1996-03-22 2006-02-02 Taiyo Nippon Sanso Corporation CVD Verfahren
US6106678A (en) 1996-03-29 2000-08-22 Lam Research Corporation Method of high density plasma CVD gap-filling
US5888876A (en) 1996-04-09 1999-03-30 Kabushiki Kaisha Toshiba Deep trench filling method using silicon film deposition and silicon migration
US5667592A (en) 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
KR100212132B1 (ko) 1996-04-24 1999-08-02 윤종용 횡형 확산로의 프로파일 열전대
US5819434A (en) 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
USD386076S (en) 1996-05-14 1997-11-11 Camco Manufacturing, Inc. Awning clamp
US5844683A (en) 1996-05-22 1998-12-01 Applied Materials, Inc. Position sensor system for substrate holders
US5920798A (en) 1996-05-28 1999-07-06 Matsushita Battery Industrial Co., Ltd. Method of preparing a semiconductor layer for an optical transforming device
US5939333A (en) 1996-05-30 1999-08-17 Micron Technology, Inc. Silicon nitride deposition method
US6534133B1 (en) 1996-06-14 2003-03-18 Research Foundation Of State University Of New York Methodology for in-situ doping of aluminum coatings
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5779203A (en) 1996-06-28 1998-07-14 Edlinger; Erich Adjustable wafer cassette stand
US5801945A (en) 1996-06-28 1998-09-01 Lam Research Corporation Scheduling method for robotic manufacturing processes
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
EP0818671A3 (en) 1996-07-12 1998-07-08 Isuzu Ceramics Research Institute Co., Ltd. A ceramic sheath type thermocouple
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5837058A (en) 1996-07-12 1998-11-17 Applied Materials, Inc. High temperature susceptor
US5915562A (en) 1996-07-12 1999-06-29 Fluoroware, Inc. Transport module with latching door
US5700729A (en) 1996-07-15 1997-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Masked-gate MOS S/D implantation
US5827757A (en) 1996-07-16 1998-10-27 Direct Radiography Corp. Fabrication of large area x-ray image capturing element
JP3122617B2 (ja) 1996-07-19 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
US5724748A (en) 1996-07-24 1998-03-10 Brooks; Ray G. Apparatus for packaging contaminant-sensitive articles and resulting package
US5879128A (en) 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US5987480A (en) 1996-07-25 1999-11-16 Donohue; Michael Method and system for delivering documents customized for a particular user over the internet using imbedded dynamic content
KR0183912B1 (ko) 1996-08-08 1999-05-01 김광호 다중 반응 챔버에 연결된 펌핑 설비 및 이를 사용하는 방법
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
JP3122618B2 (ja) 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
TW344847B (en) 1996-08-29 1998-11-11 Tokyo Electron Co Ltd Substrate treatment system, substrate transfer system, and substrate transfer method
US5806980A (en) 1996-09-11 1998-09-15 Novellus Systems, Inc. Methods and apparatus for measuring temperatures at high potential
US5857777A (en) 1996-09-25 1999-01-12 Claud S. Gordon Company Smart temperature sensing device
US6048154A (en) 1996-10-02 2000-04-11 Applied Materials, Inc. High vacuum dual stage load lock and method for loading and unloading wafers using a high vacuum dual stage load lock
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US6073973A (en) 1996-10-31 2000-06-13 Stanley Aviation Corporation Lightweight positive lock coupling
US6444037B1 (en) 1996-11-13 2002-09-03 Applied Materials, Inc. Chamber liner for high temperature processing chamber
US6347636B1 (en) 1996-11-13 2002-02-19 Applied Materials, Inc. Methods and apparatus for gettering fluorine from chamber material surfaces
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
JP3740587B2 (ja) 1996-11-25 2006-02-01 山里産業株式会社 熱電対
US5836483A (en) 1997-02-05 1998-11-17 Aerotech Dental Systems, Inc. Self-regulating fluid dispensing cap with safety pressure relief valve for dental/medical unit fluid bottles
US5753835A (en) 1996-12-12 1998-05-19 Caterpillar Inc. Receptacle for holding a sensing device
US6367410B1 (en) 1996-12-16 2002-04-09 Applied Materials, Inc. Closed-loop dome thermal control apparatus for a semiconductor wafer processing system
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
US5984391A (en) 1997-02-03 1999-11-16 Novellus Systems, Inc. Microfeature wafer handling apparatus and methods
US5893741A (en) 1997-02-07 1999-04-13 National Science Council Method for simultaneously forming local interconnect with silicided elevated source/drain MOSFET's
US20020174106A1 (en) 1997-02-10 2002-11-21 Actioneer, Inc. Method and apparatus for receiving information in response to a request
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
JP3492135B2 (ja) 1997-02-13 2004-02-03 三菱重工業株式会社 熱流束計
JPH10239165A (ja) 1997-02-27 1998-09-11 Sony Corp 基板の温度測定器、基板の温度を測定する方法および基板の加熱方法
US6461982B2 (en) 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
EP0963552B1 (en) 1997-02-28 2003-07-09 Extraction Systems, Inc. System for detecting amine and other basic molecular contamination in a gas
US6096267A (en) 1997-02-28 2000-08-01 Extraction Systems, Inc. System for detecting base contaminants in air
US5879459A (en) 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US5947718A (en) 1997-03-07 1999-09-07 Semitool, Inc. Semiconductor processing furnace
JP3124506B2 (ja) 1997-03-14 2001-01-15 白光株式会社 ヒータ・センサ複合体
US6214122B1 (en) 1997-03-17 2001-04-10 Motorola, Inc. Rapid thermal processing susceptor
US5866795A (en) 1997-03-17 1999-02-02 Applied Materials, Inc. Liquid flow rate estimation and verification by direct liquid measurement
US6287988B1 (en) 1997-03-18 2001-09-11 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
JPH10261620A (ja) 1997-03-19 1998-09-29 Hitachi Ltd 表面処理装置
US6891138B2 (en) 1997-04-04 2005-05-10 Robert C. Dalton Electromagnetic susceptors with coatings for artificial dielectric systems and devices
US5865205A (en) 1997-04-17 1999-02-02 Applied Materials, Inc. Dynamic gas flow controller
JP3752578B2 (ja) 1997-04-21 2006-03-08 株式会社フジキン 流体制御器用加熱装置
US6026762A (en) 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US6053983A (en) 1997-05-08 2000-04-25 Tokyo Electron, Ltd. Wafer for carrying semiconductor wafers and method detecting wafers on carrier
US5904170A (en) 1997-05-14 1999-05-18 Applied Materials, Inc. Pressure flow and concentration control of oxygen/ozone gas mixtures
JP3230051B2 (ja) 1997-05-16 2001-11-19 東京エレクトロン株式会社 乾燥処理方法及びその装置
US6390754B2 (en) 1997-05-21 2002-05-21 Tokyo Electron Limited Wafer processing apparatus, method of operating the same and wafer detecting system
JPH1144799A (ja) 1997-05-27 1999-02-16 Ushio Inc 光路分割型紫外線照射装置
US5937323A (en) 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6201999B1 (en) 1997-06-09 2001-03-13 Applied Materials, Inc. Method and apparatus for automatically generating schedules for wafer processing within a multichamber semiconductor wafer processing tool
US6104401A (en) 1997-06-12 2000-08-15 Netscape Communications Corporation Link filters
EP0887632A1 (en) 1997-06-24 1998-12-30 Isuzu Ceramics Research Institute Co., Ltd. A ceramic thermocouple for measuring temperature of molten metal
US5968275A (en) 1997-06-25 1999-10-19 Lam Research Corporation Methods and apparatus for passivating a substrate in a plasma reactor
US6531193B2 (en) 1997-07-07 2003-03-11 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
US6576064B2 (en) 1997-07-10 2003-06-10 Sandia Corporation Support apparatus for semiconductor wafer processing
US6024799A (en) 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6312525B1 (en) 1997-07-11 2001-11-06 Applied Materials, Inc. Modular architecture for semiconductor wafer fabrication equipment
US6083321A (en) 1997-07-11 2000-07-04 Applied Materials, Inc. Fluid delivery system and method
US5975492A (en) 1997-07-14 1999-11-02 Brenes; Arthur Bellows driver slot valve
US6099596A (en) 1997-07-23 2000-08-08 Applied Materials, Inc. Wafer out-of-pocket detection tool
US6013553A (en) 1997-07-24 2000-01-11 Texas Instruments Incorporated Zirconium and/or hafnium oxynitride gate dielectric
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100385946B1 (ko) 1999-12-08 2003-06-02 삼성전자주식회사 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자
US5827420A (en) 1997-07-29 1998-10-27 World Precision Instruments, Inc. Method and apparatus for the generation of nitric oxide
US5884640A (en) 1997-08-07 1999-03-23 Applied Materials, Inc. Method and apparatus for drying substrates
US6321680B2 (en) 1997-08-11 2001-11-27 Torrex Equipment Corporation Vertical plasma enhanced process apparatus and method
US7393561B2 (en) 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
US20030049372A1 (en) 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
JP3317209B2 (ja) 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
US6121158A (en) 1997-08-13 2000-09-19 Sony Corporation Method for hardening a photoresist material formed on a substrate
USD404370S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Cap for use in a semiconductor wafer heat processing apparatus
USD404372S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Ring for use in a semiconductor wafer heat processing apparatus
US6242359B1 (en) 1997-08-20 2001-06-05 Air Liquide America Corporation Plasma cleaning and etching methods using non-global-warming compounds
KR100253664B1 (ko) 1997-08-22 2000-04-15 이해광 폴리이미드 건조기의 작동 시스템
US6104011A (en) 1997-09-04 2000-08-15 Watlow Electric Manufacturing Company Sheathed thermocouple with internal coiled wires
AUPO904597A0 (en) 1997-09-08 1997-10-02 Canon Information Systems Research Australia Pty Ltd Method for non-linear document conversion and printing
JP3581537B2 (ja) 1997-09-24 2004-10-27 三菱重工業株式会社 高周波加熱コイルの設置間隙保持装置
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
WO1999018496A1 (en) 1997-10-07 1999-04-15 Electronics Development Corporation Transducer assembly with smart connector
JPH11118615A (ja) 1997-10-09 1999-04-30 Kakunenryo Cycle Kaihatsu Kiko 伸縮性を有する被測定物用温度センサ
US6624064B1 (en) 1997-10-10 2003-09-23 Applied Materials, Inc. Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application
US5908672A (en) 1997-10-15 1999-06-01 Applied Materials, Inc. Method and apparatus for depositing a planarized passivation layer
KR20010031714A (ko) 1997-11-03 2001-04-16 러셀 엔. 페어뱅크스, 쥬니어 수명이 긴 고온 공정 챔버
WO1999023690A1 (en) 1997-11-03 1999-05-14 Asm America, Inc. Method of processing wafers with low mass support
JP2001522142A (ja) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
JPH11140648A (ja) 1997-11-07 1999-05-25 Tokyo Electron Ltd プロセスチャンバ装置及び処理装置
JP3050193B2 (ja) 1997-11-12 2000-06-12 日本電気株式会社 半導体装置及びその製造方法
US6136211A (en) 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
GB9724168D0 (en) 1997-11-14 1998-01-14 Air Prod & Chem Gas control device and method of supplying gas
KR100252049B1 (ko) 1997-11-18 2000-04-15 윤종용 원자층 증착법에 의한 알루미늄층의 제조방법
US6068441A (en) 1997-11-21 2000-05-30 Asm America, Inc. Substrate transfer system for semiconductor processing equipment
US6574644B2 (en) 1997-11-26 2003-06-03 Siemens Corporate Research, Inc Automatic capturing of hyperlink specifications for multimedia documents
EP2099061A3 (en) 1997-11-28 2013-06-12 Mattson Technology, Inc. Systems and methods for low contamination, high throughput handling of workpieces for vacuum processing
US6013920A (en) 1997-11-28 2000-01-11 Fortrend Engineering Coirporation Wafer-mapping load post interface having an effector position sensing device
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6106625A (en) 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
KR100295043B1 (ko) 1997-12-03 2001-10-19 윤종용 저유전상수절연막을층간절연막으로사용하는반도체장치의금속막형성방법
US6248168B1 (en) 1997-12-15 2001-06-19 Tokyo Electron Limited Spin coating apparatus including aging unit and solvent replacement unit
JPH11319545A (ja) 1997-12-15 1999-11-24 Canon Inc プラズマ処理方法及び基体の処理方法
JPH11183264A (ja) 1997-12-16 1999-07-09 Tokyo Yogyo Co Ltd 熱電対をもつ温度測定器
JPH11183265A (ja) 1997-12-16 1999-07-09 Tokyo Yogyo Co Ltd 熱電対をもつ温度測定器
JPH11195688A (ja) 1997-12-26 1999-07-21 Mc Electronics Kk 基板処理装置
USD409894S (en) 1997-12-30 1999-05-18 Mcclurg Ben B Sheet rock plug
KR100249391B1 (ko) 1997-12-30 2000-03-15 김영환 가열장치
KR100269328B1 (ko) 1997-12-31 2000-10-16 윤종용 원자층 증착 공정을 이용하는 도전층 형성방법
JP3314151B2 (ja) 1998-01-05 2002-08-12 株式会社日立国際電気 プラズマｃｖｄ装置及び半導体装置の製造方法
JP3998418B2 (ja) 1998-01-16 2007-10-24 ブルックス オートメーション インコーポレイテッド 半導体ウエファーカセットの位置決め及び検知機構
US6091062A (en) 1998-01-27 2000-07-18 Kinetrix, Inc. Method and apparatus for temperature control of a semiconductor electrical-test contractor assembly
US6125789A (en) 1998-01-30 2000-10-03 Applied Materials, Inc. Increasing the sensitivity of an in-situ particle monitor
TWI237305B (en) 1998-02-04 2005-08-01 Nikon Corp Exposure apparatus and positioning apparatus of substrate receiving cassette
US6383955B1 (en) 1998-02-05 2002-05-07 Asm Japan K.K. Silicone polymer insulation film on semiconductor substrate and method for forming the film
US7354873B2 (en) 1998-02-05 2008-04-08 Asm Japan K.K. Method for forming insulation film
US7582575B2 (en) 1998-02-05 2009-09-01 Asm Japan K.K. Method for forming insulation film
TW437017B (en) 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6050506A (en) 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
US6072163A (en) 1998-03-05 2000-06-06 Fsi International Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
US7181501B2 (en) 1998-03-19 2007-02-20 Isochron, Inc. Remote data acquisition, transmission and analysis system including handheld wireless equipment
JP3656701B2 (ja) 1998-03-23 2005-06-08 東京エレクトロン株式会社 処理装置
JPH11287715A (ja) 1998-04-02 1999-10-19 Canon Inc 熱電対
SE9801190D0 (sv) 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
US6015465A (en) 1998-04-08 2000-01-18 Applied Materials, Inc. Temperature control system for semiconductor process chamber
KR100265287B1 (ko) 1998-04-21 2000-10-02 윤종용 반도체소자 제조용 식각설비의 멀티챔버 시스템
US6079927A (en) 1998-04-22 2000-06-27 Varian Semiconductor Equipment Associates, Inc. Automated wafer buffer for use with wafer processing equipment
US6120008A (en) 1998-04-28 2000-09-19 Life International Products, Inc. Oxygenating apparatus, method for oxygenating a liquid therewith, and applications thereof
US6067680A (en) 1998-04-29 2000-05-30 Micron Technology, Inc. Semiconductor processing method of forming a conductively doped semiconductive material plug within a contact opening
KR100376983B1 (ko) 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR100376984B1 (ko) 1998-04-30 2003-07-16 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
US6060721A (en) 1998-05-06 2000-05-09 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus for detecting correct positioning of a wafer cassette
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6126848A (en) 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
JP2002515648A (ja) 1998-05-11 2002-05-28 セミトゥール・インコーポレイテッド 加熱反応炉の温度制御システム
US6218288B1 (en) 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
KR100309918B1 (ko) 1998-05-16 2001-12-17 윤종용 광시야각액정표시장치및그제조방법
US6284050B1 (en) 1998-05-18 2001-09-04 Novellus Systems, Inc. UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition
JP3208376B2 (ja) 1998-05-20 2001-09-10 株式会社半導体プロセス研究所 成膜方法及び半導体装置の製造方法
JPH11343571A (ja) 1998-05-29 1999-12-14 Ngk Insulators Ltd サセプター
NL1009327C2 (nl) 1998-06-05 1999-12-10 Asm Int Werkwijze en inrichting voor het overbrengen van wafers.
JPH11354637A (ja) 1998-06-11 1999-12-24 Oki Electric Ind Co Ltd 配線の接続構造及び配線の接続部の形成方法
US6148761A (en) 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP2963443B1 (ja) 1998-06-19 1999-10-18 キヤノン販売株式会社 半導体装置の製造装置
KR20000002833A (ko) 1998-06-23 2000-01-15 윤종용 반도체 웨이퍼 보트
JP3333135B2 (ja) 1998-06-25 2002-10-07 東京エレクトロン株式会社 熱処理装置及び熱処理方法
JP3472482B2 (ja) 1998-06-30 2003-12-02 富士通株式会社 半導体装置の製造方法と製造装置
US6232248B1 (en) 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
JP2000040728A (ja) 1998-07-22 2000-02-08 Nippon Asm Kk ウェハ搬送機構
US20010001384A1 (en) 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
US6344232B1 (en) 1998-07-30 2002-02-05 The United States Of America As Represented By The Secretary Of The Air Force Computer controlled temperature and oxygen maintenance for fiber coating CVD
USD412270S (en) 1998-08-10 1999-07-27 David Frank Fredrickson Article lifter
US6569971B2 (en) 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
US6427622B2 (en) 1998-08-28 2002-08-06 Mv Systems, Inc. Hot wire chemical vapor deposition method and apparatus using graphite hot rods
US6323081B1 (en) 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
DE69937042T2 (de) 1998-09-11 2008-05-29 Japan Science And Technology Agency, Kawaguchi Kombinatorische vorrichtung für epitaktische molekularschicht
US6203969B1 (en) 1998-09-14 2001-03-20 Tokyo Electron Limited Resist processing apparatus which measures temperature of heat-sensing substrate and measuring method therein
US6187672B1 (en) 1998-09-22 2001-02-13 Conexant Systems, Inc. Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing
KR100646906B1 (ko) 1998-09-22 2006-11-17 동경 엘렉트론 주식회사 기판처리장치 및 기판처리방법
US6800571B2 (en) 1998-09-29 2004-10-05 Applied Materials Inc. CVD plasma assisted low dielectric constant films
US6143082A (en) 1998-10-08 2000-11-07 Novellus Systems, Inc. Isolation of incompatible processes in a multi-station processing chamber
US6257758B1 (en) 1998-10-09 2001-07-10 Claud S. Gordon Company Surface temperature sensor
USD451893S1 (en) 1998-10-15 2001-12-11 Meto International Gmbh Arrangement of aluminum foil coils forming an inductor of a resonant frequency identification element
US6462671B2 (en) 1998-10-20 2002-10-08 Brendyl Trent Bushner Remote securities based data reception and order system
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
KR100317238B1 (ko) 1998-11-03 2002-02-19 윤종용 가열로 온도검출용 스파이크 열전대 소자_
US6423613B1 (en) 1998-11-10 2002-07-23 Micron Technology, Inc. Low temperature silicon wafer bond process with bulk material bond strength
JP2000150617A (ja) 1998-11-17 2000-05-30 Tokyo Electron Ltd 搬送装置
JP3664897B2 (ja) 1998-11-18 2005-06-29 東京エレクトロン株式会社 縦型熱処理装置
DE19956531A1 (de) 1998-11-27 2000-05-31 Hyundai Electronics Ind Vernetzer für ein Photoresist und diesen enthaltende Photoresistzusammensetzung
JP2000174123A (ja) 1998-12-09 2000-06-23 Nec Corp 半導体装置及びその製造方法
US6310328B1 (en) 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
JP2000183346A (ja) 1998-12-15 2000-06-30 Toshiba Corp 半導体装置及びその製造方法
US6129954A (en) 1998-12-22 2000-10-10 General Electric Company Method for thermally spraying crack-free mullite coatings on ceramic-based substrates
US6607948B1 (en) 1998-12-24 2003-08-19 Kabushiki Kaisha Toshiba Method of manufacturing a substrate using an SiGe layer
US6496819B1 (en) 1998-12-28 2002-12-17 Oracle Corporation Rewriting a query in terms of a summary based on functional dependencies and join backs, and based on join derivability
KR100281094B1 (ko) 1998-12-30 2001-02-01 서평원 이동 통신 시스템에서 셀 탐색 방법
US6137240A (en) 1998-12-31 2000-10-24 Lumion Corporation Universal ballast control circuit
US7217325B2 (en) 1999-01-22 2007-05-15 Semitool, Inc. System for processing a workpiece
TW455912B (en) 1999-01-22 2001-09-21 Sony Corp Method and apparatus for film deposition
JP2987148B1 (ja) 1999-01-26 1999-12-06 国際電気株式会社 基板処理装置
US6044860A (en) 1999-02-01 2000-04-04 Spx Corporation Adjustable lockout device for knife gate valves
US6374831B1 (en) 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
WO2000047404A1 (en) 1999-02-12 2000-08-17 Gelest, Inc. Chemical vapor deposition of tungsten nitride
IT1308606B1 (it) 1999-02-12 2002-01-08 Lpe Spa Dispositivo per maneggiare substrati mediante un istema autolivellante a depressione in reattori epistassiali ad induzione con suscettore
US6190037B1 (en) 1999-02-19 2001-02-20 Applied Materials, Inc. Non-intrusive, on-the-fly (OTF) temperature measurement and monitoring system
US6426125B1 (en) 1999-03-17 2002-07-30 General Electric Company Multilayer article and method of making by ARC plasma deposition
US6250250B1 (en) 1999-03-18 2001-06-26 Yuri Maishev Multiple-cell source of uniform plasma
JP3250154B2 (ja) 1999-03-31 2002-01-28 株式会社スーパーシリコン研究所 半導体ウエハ製造装置
JP3398936B2 (ja) 1999-04-09 2003-04-21 日本エー・エス・エム株式会社 半導体処理装置
US6264467B1 (en) 1999-04-14 2001-07-24 Applied Materials, Inc. Micro grooved support surface for reducing substrate wear and slip formation
US6326597B1 (en) 1999-04-15 2001-12-04 Applied Materials, Inc. Temperature control system for process chamber
JP3965258B2 (ja) 1999-04-30 2007-08-29 日本碍子株式会社 半導体製造装置用のセラミックス製ガス供給構造
US7588720B2 (en) 1999-04-30 2009-09-15 Tso3, Inc. Method and apparatus for ozone sterilization
KR100347379B1 (ko) 1999-05-01 2002-08-07 주식회사 피케이엘 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치
JP3072989B1 (ja) 1999-05-14 2000-08-07 日本エー・エス・エム株式会社 半導体基板上に薄膜を形成する成膜装置における成膜方法
JP2000329447A (ja) 1999-05-17 2000-11-30 Matsushita Refrig Co Ltd 冷蔵庫および除霜用ヒーター
JP4294791B2 (ja) 1999-05-17 2009-07-15 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
US6119710A (en) 1999-05-26 2000-09-19 Cyber Instrument Technologies Llc Method for wide range gas flow system with real time flow measurement and correction
AU5448200A (en) 1999-05-27 2000-12-18 Matrix Integrated Systems, Inc. Rapid heating and cooling of workpiece chucks
WO2000074122A1 (fr) 1999-05-28 2000-12-07 Tokyo Electron Limited Dispositif de traitement a l'ozone pour systeme de fabrication de semi-conducteurs
US20020033183A1 (en) 1999-05-29 2002-03-21 Sheng Sun Method and apparatus for enhanced chamber cleaning
JP3668079B2 (ja) 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
US6656281B1 (en) 1999-06-09 2003-12-02 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US6555183B2 (en) 1999-06-11 2003-04-29 Applied Materials, Inc. Plasma treatment of a titanium nitride film formed by chemical vapor deposition
US6548402B2 (en) 1999-06-11 2003-04-15 Applied Materials, Inc. Method of depositing a thick titanium nitride film
US6281098B1 (en) 1999-06-15 2001-08-28 Midwest Research Institute Process for Polycrystalline film silicon growth
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6812157B1 (en) 1999-06-24 2004-11-02 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
FR2795745B1 (fr) 1999-06-30 2001-08-03 Saint Gobain Vitrage Procede de depot d'une couche a base de tungstene et/ou de molybdene sur un substrat verrier, ceramique ou vitroceramique, et substrat ainsi revetu
JP3252835B2 (ja) 1999-07-02 2002-02-04 松下電器産業株式会社 半導体装置およびその製造方法
JP2001023955A (ja) 1999-07-07 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
US6238734B1 (en) 1999-07-08 2001-05-29 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
JP2001023872A (ja) 1999-07-09 2001-01-26 Hitachi Ltd 半導体基板処理装置
US6368988B1 (en) 1999-07-16 2002-04-09 Micron Technology, Inc. Combined gate cap or digit line and spacer deposition using HDP
JP3701148B2 (ja) 1999-07-28 2005-09-28 株式会社日立製作所 コンテンツの配信方法
US6867859B1 (en) 1999-08-03 2005-03-15 Lightwind Corporation Inductively coupled plasma spectrometer for process diagnostics and control
KR100557594B1 (ko) 1999-08-17 2006-03-10 주식회사 하이닉스반도체 노광후 지연 안정성을 갖는 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 함유한 포토레지스트 조성물
EP1077274A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
ATE418158T1 (de) 1999-08-17 2009-01-15 Applied Materials Inc Oberflächenbehandlung von kohlenstoffdotierten sio2-filmen zur erhöhung der stabilität während der o2-veraschung
EP1077479A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
US6579833B1 (en) 1999-09-01 2003-06-17 The Board Of Trustees Of The University Of Illinois Process for converting a metal carbide to carbon by etching in halogens
JP2001077088A (ja) 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
US6429146B2 (en) 1999-09-02 2002-08-06 Micron Technology, Inc. Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing
US6238636B1 (en) 1999-09-03 2001-05-29 Air Liquide America Corporation Process and systems for purification of boron trichloride
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US7894474B1 (en) 1999-09-10 2011-02-22 Koninklijke Philips Electronics N.V. Remote control of an electronic device through downloading of a control interface of the electronic device in a mobile station
US6355153B1 (en) 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6420792B1 (en) 1999-09-24 2002-07-16 Texas Instruments Incorporated Semiconductor wafer edge marking
US6293700B1 (en) 1999-09-24 2001-09-25 Fluke Corporation Calibrated isothermal assembly for a thermocouple thermometer
US6740853B1 (en) 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
US6296710B1 (en) 1999-10-06 2001-10-02 Advanced Micro Devices, Inc. Multi-port gas injector for a vertical furnace used in semiconductor processing
US7010580B1 (en) 1999-10-08 2006-03-07 Agile Software Corp. Method and apparatus for exchanging data in a platform independent manner
US6503758B1 (en) 1999-10-12 2003-01-07 President & Fellows Of Harvard College Systems and methods for measuring nitrate levels
MXPA02003794A (es) 1999-10-13 2002-12-13 Texaco Development Corp Tubo protector de termopar reforzado con zafiro.
US6475276B1 (en) 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
US6203613B1 (en) 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US6287913B1 (en) 1999-10-26 2001-09-11 International Business Machines Corporation Double polysilicon process for providing single chip high performance logic and compact embedded memory structure
KR20010045418A (ko) 1999-11-05 2001-06-05 박종섭 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
JP3551867B2 (ja) 1999-11-09 2004-08-11 信越化学工業株式会社 シリコンフォーカスリング及びその製造方法
KR100547248B1 (ko) 1999-11-12 2006-02-01 주식회사 하이닉스반도체 알루미나를 사용한 반도체 소자의 게이트 절연막 형성방법
JP4209057B2 (ja) 1999-12-01 2009-01-14 東京エレクトロン株式会社 セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法
KR100369324B1 (ko) 1999-12-02 2003-01-24 한국전자통신연구원 평면형 마이크로 공동구조 제조 방법
FI118804B (fi) 1999-12-03 2008-03-31 Asm Int Menetelmä oksidikalvojen kasvattamiseksi
EP1107512A1 (en) 1999-12-03 2001-06-13 Sony International (Europe) GmbH Communication device and software for operating multimedia applications
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
JP3810604B2 (ja) 1999-12-21 2006-08-16 Ｓｍｃ株式会社 ゲートバルブ
JP2001176952A (ja) 1999-12-21 2001-06-29 Toshiba Mach Co Ltd ウェーハ位置ずれ検出装置
WO2001050349A1 (en) 1999-12-30 2001-07-12 Rutgers, The State University Of New Jersey Electronic document customization and transformation utilizing user feedback
US6335049B1 (en) 2000-01-03 2002-01-01 Micron Technology, Inc. Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
US6576062B2 (en) 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
US6541367B1 (en) 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
JP2001203211A (ja) 2000-01-20 2001-07-27 Hitachi Kokusai Electric Inc 水素アニール処理方法及びその装置
TW473792B (en) 2000-01-20 2002-01-21 Ngk Insulators Ltd Electrostatic chuck
JP2001207268A (ja) 2000-01-27 2001-07-31 Kubota Corp 成膜装置
JP4384770B2 (ja) 2000-01-27 2009-12-16 株式会社日立国際電気 基板処理装置
JP2001207265A (ja) 2000-01-27 2001-07-31 Kubota Corp 成膜装置
US6475930B1 (en) 2000-01-31 2002-11-05 Motorola, Inc. UV cure process and tool for low k film formation
US6436819B1 (en) 2000-02-01 2002-08-20 Applied Materials, Inc. Nitrogen treatment of a metal nitride/metal stack
US6191399B1 (en) 2000-02-01 2001-02-20 Asm America, Inc. System of controlling the temperature of a processing chamber
JP4174941B2 (ja) 2000-02-03 2008-11-05 株式会社デンソー 薄膜製造方法及び薄膜製造装置
US6521046B2 (en) 2000-02-04 2003-02-18 Kabushiki Kaisha Kobe Seiko Sho Chamber material made of Al alloy and heater block
US6372583B1 (en) 2000-02-09 2002-04-16 Intel Corporation Process for making semiconductor device with epitaxially grown source and drain
US6407435B1 (en) 2000-02-11 2002-06-18 Sharp Laboratories Of America, Inc. Multilayer dielectric stack and method
US20020009119A1 (en) 2000-02-11 2002-01-24 Matthew William T. Environmental heat stress monitor
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
KR100520188B1 (ko) 2000-02-18 2005-10-10 주식회사 하이닉스반도체 부분적으로 가교화된 2층 포토레지스트용 중합체
TW476996B (en) 2000-02-28 2002-02-21 Mitsubishi Material Silicon Semiconductor manufacturing method and semiconductor manufacturing apparatus
US6846711B2 (en) 2000-03-02 2005-01-25 Tokyo Electron Limited Method of making a metal oxide capacitor, including a barrier film
US7419903B2 (en) 2000-03-07 2008-09-02 Asm International N.V. Thin films
AU2001245388A1 (en) 2000-03-07 2001-09-17 Asm America, Inc. Graded thin films
JP4054159B2 (ja) 2000-03-08 2008-02-27 東京エレクトロン株式会社 基板処理方法及びその装置
US6455098B2 (en) 2000-03-09 2002-09-24 Semix Incorporated Wafer processing apparatus and method
DE60113073T2 (de) 2000-03-10 2006-08-31 Smiths Detection Inc., Pasadena Steuerung für einen industriellen prozes mit einer oder mehreren multidimensionalen variablen
JP2001332609A (ja) 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
US6506009B1 (en) 2000-03-16 2003-01-14 Applied Materials, Inc. Apparatus for storing and moving a cassette
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6558755B2 (en) 2000-03-20 2003-05-06 Dow Corning Corporation Plasma curing process for porous silica thin film
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US6913796B2 (en) 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6598559B1 (en) 2000-03-24 2003-07-29 Applied Materials, Inc. Temperature controlled chamber
AT412302B (de) * 2000-03-28 2004-12-27 Hoerbiger Ventilwerke Gmbh Selbsttätiges ventil
JP3676983B2 (ja) 2000-03-29 2005-07-27 株式会社日立国際電気 半導体製造方法、基板処理方法、及び半導体製造装置
JP2001342570A (ja) 2000-03-30 2001-12-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体製造装置
JP2001345263A (ja) 2000-03-31 2001-12-14 Nikon Corp 露光装置及び露光方法、並びにデバイス製造方法
JP4281208B2 (ja) 2000-04-04 2009-06-17 ソニー株式会社 ロボット遠隔制御システム
KR100752682B1 (ko) 2000-04-06 2007-08-29 에이에스엠 아메리카, 인코포레이티드 유리질 보호용 장벽코팅
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
US6641350B2 (en) 2000-04-17 2003-11-04 Hitachi Kokusai Electric Inc. Dual loading port semiconductor processing equipment
US6451713B1 (en) 2000-04-17 2002-09-17 Mattson Technology, Inc. UV pretreatment process for ultra-thin oxynitride formation
US6984591B1 (en) 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
US6329297B1 (en) 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
US7141768B2 (en) 2000-04-28 2006-11-28 Nexicor, Llc Fastening device
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
KR100367662B1 (ko) 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
DE10021871A1 (de) 2000-05-05 2001-11-15 Infineon Technologies Ag Verfahren zum Herstellen einer Barriereschicht in einem elektronischen Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements mit einer Barriereschicht
JP2001319921A (ja) 2000-05-09 2001-11-16 Canon Inc プロセスチャンバ
US20020195056A1 (en) 2000-05-12 2002-12-26 Gurtej Sandhu Versatile atomic layer deposition apparatus
US20020078893A1 (en) 2000-05-18 2002-06-27 Applied Materials , Inc. Plasma enhanced chemical processing reactor and method
JP4449226B2 (ja) 2000-05-22 2010-04-14 東京エレクトロン株式会社 金属酸化膜の改質方法、金属酸化膜の成膜方法及び熱処理装置
JP3448737B2 (ja) 2000-05-25 2003-09-22 住友重機械工業株式会社 ウエハーチャック用冷却板及びウエハーチャック
US6559026B1 (en) 2000-05-25 2003-05-06 Applied Materials, Inc Trench fill with HDP-CVD process including coupled high power density plasma deposition
US6558517B2 (en) 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
US6884295B2 (en) 2000-05-29 2005-04-26 Tokyo Electron Limited Method of forming oxynitride film or the like and system for carrying out the same
DE60131698T2 (de) 2000-05-31 2008-10-30 Tokyo Electron Ltd. Thermische Behandlungsvorrichtung und Verfahren
EP2293322A1 (en) 2000-06-08 2011-03-09 Genitech, Inc. Method for forming a metal nitride layer
USD455024S1 (en) 2000-06-09 2002-04-02 Levenger Company Portable writing surface
KR100406173B1 (ko) 2000-06-13 2003-11-19 주식회사 하이닉스반도체 촉매 분사 수단을 구비한 히터 블록
US6863019B2 (en) 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
ATE341097T1 (de) 2000-06-15 2006-10-15 Koninkl Philips Electronics Nv Halter für eine substratkassette und vorrichtung ausgerüstet mit diesem halter
US6461435B1 (en) 2000-06-22 2002-10-08 Applied Materials, Inc. Showerhead with reduced contact area
US6346419B1 (en) 2000-06-26 2002-02-12 The United States Of America As Represented By The Department Of Commerce Photolysis system for fast-response NO2 measurements and method therefor
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
KR100546138B1 (ko) 2000-06-30 2006-01-24 주식회사 하이닉스반도체 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
KR100467366B1 (ko) 2000-06-30 2005-01-24 주식회사 하이닉스반도체 원자층 증착법을 이용한 지르코늄산화막 형성방법
US6874480B1 (en) 2000-07-03 2005-04-05 Combustion Dynamics Corp. Flow meter
JP3497450B2 (ja) 2000-07-06 2004-02-16 東京エレクトロン株式会社 バッチ式熱処理装置及びその制御方法
JP2002164342A (ja) 2000-07-21 2002-06-07 Canon Sales Co Inc 半導体装置及びその製造方法
AU2001288225A1 (en) 2000-07-24 2002-02-05 The University Of Maryland College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
US6450117B1 (en) 2000-08-07 2002-09-17 Applied Materials, Inc. Directing a flow of gas in a substrate processing chamber
US6712929B1 (en) 2000-08-08 2004-03-30 Lam Research Corporation Deformation reduction at the main chamber
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US20020136214A1 (en) 2000-08-14 2002-09-26 Consumer Direct Link Pervasive computing network architecture
CN100431110C (zh) 2000-08-18 2008-11-05 东京毅力科创株式会社 低介电氮化硅膜的形成方法和半导体器件及其制造工艺
JP4150493B2 (ja) 2000-08-22 2008-09-17 株式会社東芝 パターン描画装置における温度測定方法
JP4365017B2 (ja) 2000-08-23 2009-11-18 東京エレクトロン株式会社 熱処理装置の降温レート制御方法および熱処理装置
US6566278B1 (en) 2000-08-24 2003-05-20 Applied Materials Inc. Method for densification of CVD carbon-doped silicon oxide films through UV irradiation
WO2002019400A1 (fr) 2000-08-30 2002-03-07 Ibiden Co., Ltd. Dispositif ceramique chauffant permettant la production de semi-conducteurs et equipement d'inspection
US6494998B1 (en) 2000-08-30 2002-12-17 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
US6784108B1 (en) 2000-08-31 2004-08-31 Micron Technology, Inc. Gas pulsing for etch profile control
KR20020019414A (ko) 2000-09-05 2002-03-12 엔도 마코토 기판 처리 장치 및 기판 처리 장치를 이용한 반도체디바이스 제조 방법
USD449873S1 (en) 2000-09-22 2001-10-30 James Bronson Garbage disposal strainer and splash guard
JP4232330B2 (ja) 2000-09-22 2009-03-04 東京エレクトロン株式会社 励起ガス形成装置、処理装置及び処理方法
JP3929261B2 (ja) 2000-09-25 2007-06-13 株式会社日立国際電気 基板処理装置および基板処理方法
US6494065B2 (en) 2000-09-26 2002-12-17 Babbitt Steam Specialty Company Valve lockout/tag out system
US6632068B2 (en) 2000-09-27 2003-10-14 Asm International N.V. Wafer handling system
AU146326S (en) 2000-09-29 2001-12-18 American Standard Int Inc Faucet
US6370796B1 (en) 2000-09-29 2002-04-16 Sony Corporation Heater block cooling system for wafer processing apparatus
US6578893B2 (en) 2000-10-02 2003-06-17 Ajs Automation, Inc. Apparatus and methods for handling semiconductor wafers
JP2002110570A (ja) 2000-10-04 2002-04-12 Asm Japan Kk 半導体製造装置用ガスラインシステム
US6745095B1 (en) 2000-10-04 2004-06-01 Applied Materials, Inc. Detection of process endpoint through monitoring fluctuation of output data
US6660660B2 (en) 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
US7204887B2 (en) 2000-10-16 2007-04-17 Nippon Steel Corporation Wafer holding, wafer support member, wafer boat and heat treatment furnace
US6395650B1 (en) 2000-10-23 2002-05-28 International Business Machines Corporation Methods for forming metal oxide layers with enhanced purity
JP4156788B2 (ja) 2000-10-23 2008-09-24 日本碍子株式会社 半導体製造装置用サセプター
FI118014B (fi) 2000-10-23 2007-05-31 Asm Int Menetelmä alumiinioksidiohutkalvojen valmistamiseksi matalissa lämpötiloissa
US6824665B2 (en) 2000-10-25 2004-11-30 Shipley Company, L.L.C. Seed layer deposition
US6688784B1 (en) 2000-10-25 2004-02-10 Advanced Micro Devices, Inc. Parallel plate development with multiple holes in top plate for control of developer flow and pressure
US6445574B1 (en) 2000-10-30 2002-09-03 Motorola, Inc. Electronic device
US6498091B1 (en) 2000-11-01 2002-12-24 Applied Materials, Inc. Method of using a barrier sputter reactor to remove an underlying barrier layer
US7032614B2 (en) 2000-11-03 2006-04-25 Applied Materials, Inc. Facilities connection box for pre-facilitation of wafer fabrication equipment
JP2002158178A (ja) 2000-11-21 2002-05-31 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6689220B1 (en) 2000-11-22 2004-02-10 Simplus Systems Corporation Plasma enhanced pulsed layer deposition
US6613695B2 (en) 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
US20020064592A1 (en) 2000-11-29 2002-05-30 Madhav Datta Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects
JP3610900B2 (ja) 2000-11-30 2005-01-19 東京エレクトロン株式会社 熱処理装置
KR100688484B1 (ko) 2000-11-30 2007-02-28 삼성전자주식회사 활성화 산소를 이용하여 기판을 처리하는 장치 및 그 방법
US20020069222A1 (en) 2000-12-01 2002-06-06 Wiznet, Inc. System and method for placing active tags in HTML document
US6913152B2 (en) 2000-12-04 2005-07-05 Peter Zuk, Jr. Disposable vacuum filtration apparatus capable of detecting microorganisms and particulates in liquid samples
JP2002237375A (ja) 2000-12-05 2002-08-23 Ibiden Co Ltd 半導体製造・検査装置用セラミック基板およびその製造方法
US7208428B2 (en) 2000-12-05 2007-04-24 Tokyo Electron Limited Method and apparatus for treating article to be treated
KR100385947B1 (ko) 2000-12-06 2003-06-02 삼성전자주식회사 원자층 증착 방법에 의한 박막 형성 방법
US6878402B2 (en) 2000-12-06 2005-04-12 Novellus Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
US6413321B1 (en) 2000-12-07 2002-07-02 Applied Materials, Inc. Method and apparatus for reducing particle contamination on wafer backside during CVD process
US6930041B2 (en) 2000-12-07 2005-08-16 Micron Technology, Inc. Photo-assisted method for semiconductor fabrication
US6576564B2 (en) 2000-12-07 2003-06-10 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
AU2002221122A1 (en) 2000-12-12 2002-06-24 Tokyo Electron Limited Thin film forming method and thin film forming device
US6814096B2 (en) 2000-12-15 2004-11-09 Nor-Cal Products, Inc. Pressure controller and method
US20020076507A1 (en) 2000-12-15 2002-06-20 Chiang Tony P. Process sequence for atomic layer deposition
US6641673B2 (en) 2000-12-20 2003-11-04 General Electric Company Fluid injector for and method of prolonged delivery and distribution of reagents into plasma
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6544906B2 (en) 2000-12-21 2003-04-08 Texas Instruments Incorporated Annealing of high-k dielectric materials
US20020151327A1 (en) 2000-12-22 2002-10-17 David Levitt Program selector and guide system and method
US20020152244A1 (en) 2000-12-22 2002-10-17 International Business Machines Corporation Method and apparatus to dynamically create a customized user interface based on a document type definition
JP5068402B2 (ja) 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法
US6398184B1 (en) 2000-12-29 2002-06-04 General Signal Corporation Lock device and lock method for knife gate valves
US7172497B2 (en) 2001-01-05 2007-02-06 Asm Nutool, Inc. Fabrication of semiconductor interconnect structures
JP4633269B2 (ja) 2001-01-15 2011-02-16 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US6583048B2 (en) 2001-01-17 2003-06-24 Air Products And Chemicals, Inc. Organosilicon precursors for interlayer dielectric films with low dielectric constants
US7087482B2 (en) 2001-01-19 2006-08-08 Samsung Electronics Co., Ltd. Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
EP1361605A4 (en) 2001-01-22 2006-02-15 Tokyo Electron Ltd METHOD FOR PRODUCING MATERIAL OF AN ELECTRONIC COMPONENT
JP4644943B2 (ja) 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
JP4334225B2 (ja) 2001-01-25 2009-09-30 東京エレクトロン株式会社 電子デバイス材料の製造方法
JP4429300B2 (ja) 2001-01-25 2010-03-10 東京エレクトロン株式会社 電子デバイス材料の製造方法
US6660662B2 (en) 2001-01-26 2003-12-09 Applied Materials, Inc. Method of reducing plasma charge damage for plasma processes
KR20020064028A (ko) 2001-01-31 2002-08-07 한빛 세마텍(주) 펄스형 자외선조사에 의한 세정 및 표면처리 장치
US7299202B2 (en) 2001-02-07 2007-11-20 Exalt Solutions, Inc. Intelligent multimedia e-catalog
US6589868B2 (en) 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
JP2005033221A (ja) 2001-02-08 2005-02-03 Tokyo Electron Ltd 基板載置台および処理装置
JP3626933B2 (ja) 2001-02-08 2005-03-09 東京エレクトロン株式会社 基板載置台の製造方法
US20020108670A1 (en) 2001-02-12 2002-08-15 Baker John Eric High purity chemical container with external level sensor and removable dip tube
EP1421607A2 (en) 2001-02-12 2004-05-26 ASM America, Inc. Improved process for deposition of semiconductor films
US6613656B2 (en) 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US7072061B2 (en) 2001-02-13 2006-07-04 Ariba, Inc. Method and system for extracting information from RFQ documents and compressing RFQ files into a common RFQ file type
US6632478B2 (en) 2001-02-22 2003-10-14 Applied Materials, Inc. Process for forming a low dielectric constant carbon-containing film
KR100410991B1 (ko) 2001-02-22 2003-12-18 삼성전자주식회사 반도체 제조장치의 로드포트
TW544775B (en) 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US20020123237A1 (en) 2001-03-05 2002-09-05 Tue Nguyen Plasma pulse semiconductor processing system and method
JP4487135B2 (ja) 2001-03-05 2010-06-23 東京エレクトロン株式会社 流体制御装置
US7563715B2 (en) 2005-12-05 2009-07-21 Asm International N.V. Method of producing thin films
US6447651B1 (en) 2001-03-07 2002-09-10 Applied Materials, Inc. High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers
US7111232B1 (en) 2001-03-07 2006-09-19 Thomas Layne Bascom Method and system for making document objects available to users of a network
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
JP3912993B2 (ja) 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
US6716571B2 (en) 2001-03-28 2004-04-06 Advanced Micro Devices, Inc. Selective photoresist hardening to facilitate lateral trimming
US6723654B2 (en) 2001-03-30 2004-04-20 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layer
TW540093B (en) 2001-04-05 2003-07-01 Angstron Systems Inc Atomic layer deposition system and method
US6448192B1 (en) 2001-04-16 2002-09-10 Motorola, Inc. Method for forming a high dielectric constant material
US6521295B1 (en) 2001-04-17 2003-02-18 Pilkington North America, Inc. Chemical vapor deposition of antimony-doped metal oxide and the coated article made thereby
US6482331B2 (en) 2001-04-18 2002-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing contamination in a plasma process chamber
TW538327B (en) 2001-04-24 2003-06-21 Unit Instr Inc System and method for a mass flow controller
US6753507B2 (en) 2001-04-27 2004-06-22 Kyocera Corporation Wafer heating apparatus
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US6847014B1 (en) 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6528430B2 (en) 2001-05-01 2003-03-04 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3
US6864041B2 (en) 2001-05-02 2005-03-08 International Business Machines Corporation Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching
US6627268B1 (en) 2001-05-03 2003-09-30 Novellus Systems, Inc. Sequential ion, UV, and electron induced chemical vapor deposition
KR20020086763A (ko) 2001-05-10 2002-11-20 주식회사 엘지이아이 플라즈마를 이용한 연속중합장치용 열전대
US6596653B2 (en) 2001-05-11 2003-07-22 Applied Materials, Inc. Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
JP2003053688A (ja) 2001-05-15 2003-02-26 Fanuc Robotics North America Inc 教示ペンダントを有するロボット・システム
JP2002343790A (ja) 2001-05-21 2002-11-29 Nec Corp 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法
US6528767B2 (en) 2001-05-22 2003-03-04 Applied Materials, Inc. Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications
US7262125B2 (en) 2001-05-22 2007-08-28 Novellus Systems, Inc. Method of forming low-resistivity tungsten interconnects
US7037574B2 (en) 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
US6810886B2 (en) 2001-05-24 2004-11-02 Applied Materials, Inc. Chamber cleaning via rapid thermal process during a cleaning period
US7159597B2 (en) 2001-06-01 2007-01-09 Applied Materials, Inc. Multistep remote plasma clean process
US6758909B2 (en) 2001-06-05 2004-07-06 Honeywell International Inc. Gas port sealing for CVD/CVI furnace hearth plates
GB0113735D0 (en) 2001-06-05 2001-07-25 Holset Engineering Co Mixing fluid streams
US6472266B1 (en) 2001-06-18 2002-10-29 Taiwan Semiconductor Manufacturing Company Method to reduce bit line capacitance in cub drams
US6391803B1 (en) 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6861334B2 (en) 2001-06-21 2005-03-01 Asm International, N.V. Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition
US6514313B1 (en) 2001-06-22 2003-02-04 Aeronex, Inc. Gas purification system and method
US20030002562A1 (en) 2001-06-27 2003-01-02 Yerlikaya Y. Denis Temperature probe adapter
US6420279B1 (en) 2001-06-28 2002-07-16 Sharp Laboratories Of America, Inc. Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
US20030000647A1 (en) 2001-06-29 2003-01-02 Applied Materials, Inc. Substrate processing chamber
JP3708031B2 (ja) 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
US20030003696A1 (en) 2001-06-29 2003-01-02 Avgerinos Gelatos Method and apparatus for tuning a plurality of processing chambers
TW539822B (en) 2001-07-03 2003-07-01 Asm Inc Source chemical container assembly
CN1277293C (zh) 2001-07-10 2006-09-27 东京毅力科创株式会社 干蚀刻方法
US20030017266A1 (en) 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US6838122B2 (en) 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
KR100400044B1 (ko) 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US20030017268A1 (en) 2001-07-18 2003-01-23 Applied Materials, Inc. .method of cvd titanium nitride film deposition for increased titanium nitride film uniformity
JP3926588B2 (ja) 2001-07-19 2007-06-06 キヤノンマーケティングジャパン株式会社 半導体装置の製造方法
US6677254B2 (en) 2001-07-23 2004-01-13 Applied Materials, Inc. Processes for making a barrier between a dielectric and a conductor and products produced therefrom
JP2003035574A (ja) 2001-07-23 2003-02-07 Mitsubishi Heavy Ind Ltd 応答型センサ及び応用計測システム
US20080268635A1 (en) 2001-07-25 2008-10-30 Sang-Ho Yu Process for forming cobalt and cobalt silicide materials in copper contact applications
US6638839B2 (en) 2001-07-26 2003-10-28 The University Of Toledo Hot-filament chemical vapor deposition chamber and process with multiple gas inlets
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6435865B1 (en) 2001-07-30 2002-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for positioning gas injectors in a vertical furnace
WO2003012843A1 (fr) 2001-07-31 2003-02-13 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procede et appareil de nettoyage et procede et appareil de gravure
JP3958539B2 (ja) 2001-08-02 2007-08-15 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP4921652B2 (ja) 2001-08-03 2012-04-25 エイエスエム インターナショナル エヌ．ヴェー． イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
US6678583B2 (en) 2001-08-06 2004-01-13 Seminet, Inc. Robotic storage buffer system for substrate carrier pods
JP3775262B2 (ja) 2001-08-09 2006-05-17 ヤマハ株式会社 電子楽器及び電子楽器システム
US6531412B2 (en) 2001-08-10 2003-03-11 International Business Machines Corporation Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
TW559905B (en) 2001-08-10 2003-11-01 Toshiba Corp Vertical chemical vapor deposition system cross-reference to related applications
JP2003059999A (ja) 2001-08-14 2003-02-28 Tokyo Electron Ltd 処理システム
US20030035002A1 (en) 2001-08-15 2003-02-20 Samsung Electronics Co., Ltd. Alternate interpretation of markup language documents
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
USD699816S1 (en) 2001-08-17 2014-02-18 Neoperl Gmbh Stream straightener for faucet
JP2003060076A (ja) 2001-08-21 2003-02-28 Nec Corp 半導体装置及びその製造方法
KR100604751B1 (ko) 2001-08-24 2006-07-26 주식회사 하이닉스반도체 산 확산 방지용 포토레지스트 공중합체 및 이를 함유하는포토레지스트 조성물
KR20030018134A (ko) 2001-08-27 2003-03-06 한국전자통신연구원 조성과 도핑 농도의 제어를 위한 반도체 소자의 절연막형성 방법
JP3886424B2 (ja) 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
JP2003077782A (ja) 2001-08-31 2003-03-14 Toshiba Corp 半導体装置の製造方法
JP3832293B2 (ja) 2001-08-31 2006-10-11 株式会社ダイフク 荷保管設備
JP3832294B2 (ja) 2001-08-31 2006-10-11 株式会社ダイフク 荷保管設備
JP4460803B2 (ja) 2001-09-05 2010-05-12 パナソニック株式会社 基板表面処理方法
US6521547B1 (en) 2001-09-07 2003-02-18 United Microelectronics Corp. Method of repairing a low dielectric constant material layer
JP2003158127A (ja) 2001-09-07 2003-05-30 Arieesu Gijutsu Kenkyu Kk 成膜方法、成膜装置、及び半導体装置
US9708707B2 (en) 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
US6756318B2 (en) 2001-09-10 2004-06-29 Tegal Corporation Nanolayer thick film processing system and method
JP4094262B2 (ja) 2001-09-13 2008-06-04 住友大阪セメント株式会社 吸着固定装置及びその製造方法
WO2003025243A2 (en) 2001-09-14 2003-03-27 Asm International N.V. Metal nitride deposition by ald using gettering reactant
US6756085B2 (en) 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US6541370B1 (en) 2001-09-17 2003-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Composite microelectronic dielectric layer with inhibited crack susceptibility
US20030059535A1 (en) 2001-09-25 2003-03-27 Lee Luo Cycling deposition of low temperature films in a cold wall single wafer process chamber
US6607976B2 (en) 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6782305B2 (en) 2001-10-01 2004-08-24 Massachusetts Institute Of Technology Method of geometric information sharing and parametric consistency maintenance in a collaborative design environment
US6720259B2 (en) 2001-10-02 2004-04-13 Genus, Inc. Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
US6960537B2 (en) 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
KR100431658B1 (ko) 2001-10-05 2004-05-17 삼성전자주식회사 기판 가열 장치 및 이를 갖는 장치
US6461436B1 (en) 2001-10-15 2002-10-08 Micron Technology, Inc. Apparatus and process of improving atomic layer deposition chamber performance
US6936183B2 (en) 2001-10-17 2005-08-30 Applied Materials, Inc. Etch process for etching microstructures
US7780789B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Vortex chamber lids for atomic layer deposition
JP2003133300A (ja) 2001-10-26 2003-05-09 Tokyo Electron Ltd 成膜装置及び成膜方法
US20080102203A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
TW563176B (en) 2001-10-26 2003-11-21 Applied Materials Inc Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US20080102208A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6902624B2 (en) 2001-10-29 2005-06-07 Genus, Inc. Massively parallel atomic layer deposition/chemical vapor deposition system
US20040253867A1 (en) 2001-11-05 2004-12-16 Shuzo Matsumoto Circuit part connector structure and gasket
KR100760291B1 (ko) 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 박막 형성 방법
US6975921B2 (en) 2001-11-09 2005-12-13 Asm International Nv Graphical representation of a wafer processing process
KR20030039247A (ko) 2001-11-12 2003-05-17 주성엔지니어링(주) 서셉터
US20040010772A1 (en) 2001-11-13 2004-01-15 General Electric Company Interactive method and system for faciliting the development of computer software applications
GB2395493B (en) 2001-11-16 2005-03-09 Trikon Holdings Ltd Forming low K dielectric layers
JP2003153706A (ja) 2001-11-20 2003-05-27 Toyobo Co Ltd 面ファスナー雌材及びその製造方法
US6926774B2 (en) 2001-11-21 2005-08-09 Applied Materials, Inc. Piezoelectric vaporizer
USD461233S1 (en) 2001-11-29 2002-08-06 James Michael Whalen Marine deck drain strainer
AU2002349589A1 (en) 2001-11-30 2003-06-10 Matsushita Electric Industrial Co., Ltd. Semiconductor device and production method therefor
JP4116283B2 (ja) 2001-11-30 2008-07-09 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ヘキサキス（モノヒドロカルビルアミノ）ジシランおよびその製造方法
US7017514B1 (en) 2001-12-03 2006-03-28 Novellus Systems, Inc. Method and apparatus for plasma optimization in water processing
US6638879B2 (en) 2001-12-06 2003-10-28 Macronix International Co., Ltd. Method for forming nitride spacer by using atomic layer deposition
KR100641762B1 (ko) 2001-12-07 2006-11-06 동경 엘렉트론 주식회사 절연막의 질화 방법, 반도체 장치 및 반도체 장치의 제조방법, 기판 처리 장치 및 기판 처리 방법
KR100446619B1 (ko) 2001-12-14 2004-09-04 삼성전자주식회사 유도 결합 플라즈마 장치
SE0104252D0 (sv) 2001-12-17 2001-12-17 Sintercast Ab New device
US20030111013A1 (en) 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US6841201B2 (en) 2001-12-21 2005-01-11 The Procter & Gamble Company Apparatus and method for treating a workpiece using plasma generated from microwave radiation
US20030116087A1 (en) 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
JP3891267B2 (ja) 2001-12-25 2007-03-14 キヤノンアネルバ株式会社 シリコン酸化膜作製方法
KR100442104B1 (ko) 2001-12-27 2004-07-27 삼성전자주식회사 커패시터를 갖는 반도체 소자의 제조방법
US6766260B2 (en) 2002-01-04 2004-07-20 Mks Instruments, Inc. Mass flow ratio system and method
CN100373559C (zh) 2002-01-15 2008-03-05 东京毅力科创株式会社 形成含硅绝缘膜的cvd方法和装置
US6580050B1 (en) 2002-01-16 2003-06-17 Pace, Incorporated Soldering station with built-in self-calibration function
JP4071968B2 (ja) 2002-01-17 2008-04-02 東芝三菱電機産業システム株式会社 ガス供給システム及びガス供給方法
US6760981B2 (en) 2002-01-18 2004-07-13 Speedline Technologies, Inc. Compact convection drying chamber for drying printed circuit boards and other electronic assemblies by enhanced evaporation
US6793733B2 (en) 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US20030141820A1 (en) 2002-01-30 2003-07-31 Applied Materials, Inc. Method and apparatus for substrate processing
US7115305B2 (en) 2002-02-01 2006-10-03 California Institute Of Technology Method of producing regular arrays of nano-scale objects using nano-structured block-copolymeric materials
KR100377095B1 (en) 2002-02-01 2003-03-20 Nexo Co Ltd Semiconductor fabrication apparatus using low energy plasma
US6732006B2 (en) 2002-02-06 2004-05-04 Asm International Nv Method and system to process semiconductor wafers
US6899507B2 (en) 2002-02-08 2005-05-31 Asm Japan K.K. Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
US7479304B2 (en) 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
DE10207131B4 (de) 2002-02-20 2007-12-20 Infineon Technologies Ag Verfahren zur Bildung einer Hartmaske in einer Schicht auf einer flachen Scheibe
US6734090B2 (en) 2002-02-20 2004-05-11 International Business Machines Corporation Method of making an edge seal for a semiconductor device
US6787185B2 (en) 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
NL1020054C2 (nl) 2002-02-25 2003-09-05 Asm Int Inrichting voor het behandelen van wafers, voorzien van een meetmiddelendoos.
US20030159653A1 (en) 2002-02-28 2003-08-28 Dando Ross S. Manifold assembly for feeding reactive precursors to substrate processing chambers
US20030170583A1 (en) 2002-03-01 2003-09-11 Hitachi Kokusai Electric Inc. Heat treatment apparatus and a method for fabricating substrates
KR100997699B1 (ko) 2002-03-05 2010-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR100449028B1 (ko) 2002-03-05 2004-09-16 삼성전자주식회사 원자층 증착법을 이용한 박막 형성방법
EP1485513A2 (en) 2002-03-08 2004-12-15 Sundew Technologies, LLC Ald method and apparatus
JP2003264186A (ja) 2002-03-11 2003-09-19 Asm Japan Kk Ｃｖｄ装置処理室のクリーニング方法
US6753618B2 (en) 2002-03-11 2004-06-22 Micron Technology, Inc. MIM capacitor with metal nitride electrode materials and method of formation
US6835039B2 (en) 2002-03-15 2004-12-28 Asm International N.V. Method and apparatus for batch processing of wafers in a furnace
US6962644B2 (en) 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
US20030173346A1 (en) 2002-03-18 2003-09-18 Renken Wayne Glenn System and method for heating and cooling wafer at accelerated rates
JP4157914B2 (ja) 2002-03-20 2008-10-01 坂野 數仁 温度測定装置及び温度測定方法
JP4099092B2 (ja) 2002-03-26 2008-06-11 東京エレクトロン株式会社 基板処理装置および基板処理方法、高速ロータリバルブ
US6800134B2 (en) 2002-03-26 2004-10-05 Micron Technology, Inc. Chemical vapor deposition methods and atomic layer deposition methods
US6825134B2 (en) 2002-03-26 2004-11-30 Applied Materials, Inc. Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow
JP4128383B2 (ja) 2002-03-27 2008-07-30 東京エレクトロン株式会社 処理装置及び処理方法
US6883733B1 (en) 2002-03-28 2005-04-26 Novellus Systems, Inc. Tapered post, showerhead design to improve mixing on dual plenum showerheads
DE10214066B4 (de) 2002-03-28 2007-02-01 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit retrogradem Dotierprofil in einem Kanalgebiet und Verfahren zur Herstellung desselben
WO2003083167A1 (en) 2002-03-28 2003-10-09 President And Fellows Of Harvard College Vapor deposition of silicon dioxide nanolaminates
JP4106948B2 (ja) 2002-03-29 2008-06-25 東京エレクトロン株式会社 被処理体の跳上り検出装置、被処理体の跳上り検出方法、プラズマ処理装置及びプラズマ処理方法
US6594550B1 (en) 2002-03-29 2003-07-15 Asm America, Inc. Method and system for using a buffer to track robotic movement
JP4001498B2 (ja) 2002-03-29 2007-10-31 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜の形成システム
US20030231698A1 (en) 2002-03-29 2003-12-18 Takatomo Yamaguchi Apparatus and method for fabricating a semiconductor device and a heat treatment apparatus
US20030188685A1 (en) 2002-04-08 2003-10-09 Applied Materials, Inc. Laser drilled surfaces for substrate processing chambers
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
KR20030081144A (ko) 2002-04-11 2003-10-17 가부시키가이샤 히다치 고쿠사이 덴키 종형 반도체 제조 장치
JP4092937B2 (ja) 2002-04-11 2008-05-28 松下電工株式会社 プラズマ処理装置及びプラズマ処理方法
US7988833B2 (en) 2002-04-12 2011-08-02 Schneider Electric USA, Inc. System and method for detecting non-cathode arcing in a plasma generation apparatus
US6710312B2 (en) 2002-04-12 2004-03-23 B H Thermal Corporation Heating jacket assembly with field replaceable thermostat
US6846515B2 (en) 2002-04-17 2005-01-25 Air Products And Chemicals, Inc. Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
US8293001B2 (en) 2002-04-17 2012-10-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
WO2003089682A1 (en) 2002-04-19 2003-10-30 Mattson Technology, Inc. System for depositing a film onto a substrate using a low vapor pressure gas precursor
KR100439948B1 (ko) 2002-04-19 2004-07-12 주식회사 아이피에스 리모트 플라즈마 ａｌｄ 장치 및 이를 이용한 ａｌｄ 박막증착방법
US6825126B2 (en) 2002-04-25 2004-11-30 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device and substrate processing apparatus
KR100472730B1 (ko) 2002-04-26 2005-03-08 주식회사 하이닉스반도체 원자층증착법을 이용한 반도체 소자의 금속전극 형성방법
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7045430B2 (en) 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
KR100437458B1 (ko) 2002-05-07 2004-06-23 삼성전자주식회사 상변화 기억 셀들 및 그 제조방법들
JP2003324072A (ja) 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US20030209326A1 (en) 2002-05-07 2003-11-13 Mattson Technology, Inc. Process and system for heating semiconductor substrates in a processing chamber containing a susceptor
US7122844B2 (en) 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US6682973B1 (en) 2002-05-16 2004-01-27 Advanced Micro Devices, Inc. Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications
US20030213560A1 (en) 2002-05-16 2003-11-20 Yaxin Wang Tandem wafer processing system and process
KR100466818B1 (ko) 2002-05-17 2005-01-24 주식회사 하이닉스반도체 반도체 소자의 절연막 형성 방법
US6797525B2 (en) 2002-05-22 2004-09-28 Agere Systems Inc. Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process
US6902656B2 (en) 2002-05-24 2005-06-07 Dalsa Semiconductor Inc. Fabrication of microstructures with vacuum-sealed cavity
KR20030092305A (ko) 2002-05-29 2003-12-06 삼성전자주식회사 고온 언도우프 막 증착 설비의 챔버 외벽에 대한 온도측정장치
JP4311914B2 (ja) 2002-06-05 2009-08-12 住友電気工業株式会社 半導体製造装置用ヒータモジュール
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7195693B2 (en) 2002-06-05 2007-03-27 Advanced Thermal Sciences Lateral temperature equalizing system for large area surfaces during processing
US20060014384A1 (en) 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
JP2004014952A (ja) 2002-06-10 2004-01-15 Tokyo Electron Ltd 処理装置および処理方法
AU2003242104A1 (en) 2002-06-10 2003-12-22 Tokyo Electron Limited Processing device and processing method
US6849464B2 (en) 2002-06-10 2005-02-01 Micron Technology, Inc. Method of fabricating a multilayer dielectric tunnel barrier structure
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US6858547B2 (en) 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US7601225B2 (en) 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
JP2004022902A (ja) 2002-06-18 2004-01-22 Fujitsu Ltd 半導体装置の製造方法
KR100455297B1 (ko) 2002-06-19 2004-11-06 삼성전자주식회사 무기물 나노튜브 제조방법
JP3670628B2 (ja) 2002-06-20 2005-07-13 株式会社東芝 成膜方法、成膜装置、および半導体装置の製造方法
TWI278532B (en) 2002-06-23 2007-04-11 Asml Us Inc Method for energy-assisted atomic layer deposition and removal
US6552209B1 (en) 2002-06-24 2003-04-22 Air Products And Chemicals, Inc. Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films
JP3999059B2 (ja) 2002-06-26 2007-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
US7255775B2 (en) 2002-06-28 2007-08-14 Toshiba Ceramics Co., Ltd. Semiconductor wafer treatment member
US20040018750A1 (en) 2002-07-02 2004-01-29 Sophie Auguste J.L. Method for deposition of nitrogen doped silicon carbide films
US7356762B2 (en) 2002-07-08 2008-04-08 Asm International Nv Method for the automatic generation of an interactive electronic equipment documentation package
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6838125B2 (en) 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
WO2004008491A2 (en) 2002-07-15 2004-01-22 Aviza Technology, Inc. Thermal processing system and configurable vertical chamber
US6976822B2 (en) 2002-07-16 2005-12-20 Semitool, Inc. End-effectors and transfer devices for handling microelectronic workpieces
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
WO2004010467A2 (en) 2002-07-19 2004-01-29 Aviza Technology, Inc. Low temperature dielectric deposition using aminosilane and ozone
TW200427858A (en) 2002-07-19 2004-12-16 Asml Us Inc Atomic layer deposition of high k dielectric films
US7297641B2 (en) 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
KR100447284B1 (ko) 2002-07-19 2004-09-07 삼성전자주식회사 화학기상증착 챔버의 세정 방법
AU2003268000A1 (en) 2002-07-19 2004-02-09 Mykrolis Corporation Liquid flow controller and precision dispense apparatus and system
US6772072B2 (en) 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US7223323B2 (en) 2002-07-24 2007-05-29 Applied Materials, Inc. Multi-chemistry plating system
US7018555B2 (en) 2002-07-26 2006-03-28 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
KR100464855B1 (ko) 2002-07-26 2005-01-06 삼성전자주식회사 박막 형성 방법과, 이를 이용한 커패시터 형성 방법 및트랜지스터 형성 방법
JP4585852B2 (ja) 2002-07-30 2010-11-24 エーエスエム アメリカ インコーポレイテッド 基板処理システム、基板処理方法及び昇華装置
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
DE10235427A1 (de) 2002-08-02 2004-02-12 Eos Gmbh Electro Optical Systems Vorrichtung und Verfahren zum Herstellen von dreidimensionalen Objekten mittels eines generativen Fertigungsverfahrens
US7153542B2 (en) 2002-08-06 2006-12-26 Tegal Corporation Assembly line processing method
KR100480610B1 (ko) 2002-08-09 2005-03-31 삼성전자주식회사 실리콘 산화막을 이용한 미세 패턴 형성방법
JP4034145B2 (ja) 2002-08-09 2008-01-16 住友大阪セメント株式会社 サセプタ装置
US7085623B2 (en) 2002-08-15 2006-08-01 Asm International Nv Method and system for using short ranged wireless enabled computers as a service tool
TW200408323A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high k metal oxides
TW200408015A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high K metal silicates
US6649921B1 (en) 2002-08-19 2003-11-18 Fusion Uv Systems, Inc. Apparatus and method providing substantially two-dimensionally uniform irradiation
US6927140B2 (en) 2002-08-21 2005-08-09 Intel Corporation Method for fabricating a bipolar transistor base
US20040036129A1 (en) 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US6884296B2 (en) 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
US6967154B2 (en) 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US6794284B2 (en) 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
US7041609B2 (en) 2002-08-28 2006-05-09 Micron Technology, Inc. Systems and methods for forming metal oxides using alcohols
JP2004091848A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd 薄膜形成装置の原料ガス供給系および薄膜形成装置
US6884066B2 (en) 2002-09-10 2005-04-26 Fsi International, Inc. Thermal process station with heated lid
US6936086B2 (en) 2002-09-11 2005-08-30 Planar Systems, Inc. High conductivity particle filter
US20040050325A1 (en) 2002-09-12 2004-03-18 Samoilov Arkadii V. Apparatus and method for delivering process gas to a substrate processing system
JP2004103990A (ja) 2002-09-12 2004-04-02 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法
US7011299B2 (en) 2002-09-16 2006-03-14 Matheson Tri-Gas, Inc. Liquid vapor delivery system and method of maintaining a constant level of fluid therein
KR100497748B1 (ko) 2002-09-17 2005-06-29 주식회사 무한 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법
US7411352B2 (en) 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
JP3594947B2 (ja) 2002-09-19 2004-12-02 東京エレクトロン株式会社 絶縁膜の形成方法、半導体装置の製造方法、基板処理装置
US7252738B2 (en) 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
JP4231953B2 (ja) 2002-09-24 2009-03-04 ペガサスネット株式会社 耳孔式ｓａｗ体温計及び該体温計による体温管理システム
JP3887291B2 (ja) 2002-09-24 2007-02-28 東京エレクトロン株式会社 基板処理装置
JP3877157B2 (ja) 2002-09-24 2007-02-07 東京エレクトロン株式会社 基板処理装置
US6696367B1 (en) 2002-09-27 2004-02-24 Asm America, Inc. System for the improved handling of wafers within a process tool
JP2004128019A (ja) 2002-09-30 2004-04-22 Applied Materials Inc プラズマ処理方法及び装置
JP2004127957A (ja) 2002-09-30 2004-04-22 Fujitsu Ltd 半導体装置の製造方法と半導体装置
US20040065255A1 (en) 2002-10-02 2004-04-08 Applied Materials, Inc. Cyclical layer deposition system
US7749563B2 (en) 2002-10-07 2010-07-06 Applied Materials, Inc. Two-layer film for next generation damascene barrier application with good oxidation resistance
JP3671951B2 (ja) 2002-10-08 2005-07-13 住友電気工業株式会社 測温装置及びそれを用いたセラミックスヒータ
JP4093462B2 (ja) 2002-10-09 2008-06-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2004134553A (ja) 2002-10-10 2004-04-30 Sony Corp レジストパターンの形成方法及び半導体装置の製造方法
US6905737B2 (en) 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
EP1408140A1 (en) 2002-10-11 2004-04-14 STMicroelectronics S.r.l. A high-density plasma process for depositing a layer of Silicon Nitride
US7080545B2 (en) 2002-10-17 2006-07-25 Advanced Technology Materials, Inc. Apparatus and process for sensing fluoro species in semiconductor processing systems
KR100460841B1 (ko) 2002-10-22 2004-12-09 한국전자통신연구원 플라즈마 인가 원자층 증착법을 통한 질소첨가 산화물박막의 형성방법
US6821909B2 (en) 2002-10-30 2004-11-23 Applied Materials, Inc. Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application
US6982230B2 (en) 2002-11-08 2006-01-03 International Business Machines Corporation Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
JP4009523B2 (ja) 2002-11-14 2007-11-14 岩谷産業株式会社 オゾンガス濃度計測方法及びオゾンガス濃度計測装置
EP1420080A3 (en) 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
US6676290B1 (en) 2002-11-15 2004-01-13 Hsueh-Yu Lu Electronic clinical thermometer
EP2182088B1 (en) 2002-11-15 2013-07-17 President and Fellows of Harvard College Atomic layer deposition using metal amidinates
KR100520902B1 (ko) 2002-11-20 2005-10-12 주식회사 아이피에스 알루미늄 화합물을 이용한 박막증착방법
KR100974141B1 (ko) 2002-11-28 2010-08-04 도쿄엘렉트론가부시키가이샤 기판 처리 장치
US7062161B2 (en) 2002-11-28 2006-06-13 Dainippon Screen Mfg. Co., Ltd. Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor
KR100486690B1 (ko) 2002-11-29 2005-05-03 삼성전자주식회사 기판 이송 모듈의 오염을 제어할 수 있는 기판 처리 장치및 방법
KR100496265B1 (ko) 2002-11-29 2005-06-17 한국전자통신연구원 반도체 소자의 박막 형성방법
TW200410337A (en) 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber
US6858524B2 (en) 2002-12-03 2005-02-22 Asm International, Nv Method of depositing barrier layer for metal gates
US7122414B2 (en) 2002-12-03 2006-10-17 Asm International, Inc. Method to fabricate dual metal CMOS devices
US6895158B2 (en) 2002-12-09 2005-05-17 Eastman Kodak Company Waveguide and method of smoothing optical surfaces
USD496008S1 (en) 2002-12-12 2004-09-14 Tokyo Electron Limited Exhaust ring for manufacturing semiconductors
USD494552S1 (en) 2002-12-12 2004-08-17 Tokyo Electron Limited Exhaust ring for manufacturing semiconductors
US7092287B2 (en) 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
AU2003301074A1 (en) 2002-12-20 2004-07-22 Brooks Automation, Inc. System and method for on-the-fly eccentricity recognition
CN2588350Y (zh) 2002-12-26 2003-11-26 张连合 一种热电偶
JP2004207564A (ja) 2002-12-26 2004-07-22 Fujitsu Ltd 半導体装置の製造方法と半導体装置
DE10261362B8 (de) 2002-12-30 2008-08-28 Osram Opto Semiconductors Gmbh Substrat-Halter
US7270713B2 (en) 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
USD486891S1 (en) 2003-01-21 2004-02-17 Richard W. Cronce, Jr. Vent pipe protective cover
USD497977S1 (en) 2003-01-22 2004-11-02 Tour & Andersson Ab Sealing ring membrane
US7122222B2 (en) 2003-01-23 2006-10-17 Air Products And Chemicals, Inc. Precursors for depositing silicon containing films and processes thereof
US20040144980A1 (en) 2003-01-27 2004-07-29 Ahn Kie Y. Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers
USD558021S1 (en) 2003-01-30 2007-12-25 Roger Lawrence Metal fabrication clamp
US20040152287A1 (en) 2003-01-31 2004-08-05 Sherrill Adrian B. Deposition of a silicon film
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US7129165B2 (en) 2003-02-04 2006-10-31 Asm Nutool, Inc. Method and structure to improve reliability of copper interconnects
US7163721B2 (en) 2003-02-04 2007-01-16 Tegal Corporation Method to plasma deposit on organic polymer dielectric film
CN100429753C (zh) 2003-02-06 2008-10-29 东京毅力科创株式会社 等离子体处理方法、半导体基板以及等离子体处理装置
US6876017B2 (en) 2003-02-08 2005-04-05 Intel Corporation Polymer sacrificial light absorbing structure and method
US7374696B2 (en) 2003-02-14 2008-05-20 Applied Materials, Inc. Method and apparatus for removing a halogen-containing residue
TWI338323B (en) 2003-02-17 2011-03-01 Nikon Corp Stage device, exposure device and manufacguring method of devices
US20040168627A1 (en) 2003-02-27 2004-09-02 Sharp Laboratories Of America, Inc. Atomic layer deposition of oxide film
US7091453B2 (en) 2003-02-27 2006-08-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus by means of light irradiation
US6930059B2 (en) 2003-02-27 2005-08-16 Sharp Laboratories Of America, Inc. Method for depositing a nanolaminate film by atomic layer deposition
US6917755B2 (en) 2003-02-27 2005-07-12 Applied Materials, Inc. Substrate support
US7077911B2 (en) 2003-03-03 2006-07-18 Seiko Epson Corporation MOCVD apparatus and MOCVD method
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US7098149B2 (en) 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
JP2004273766A (ja) 2003-03-07 2004-09-30 Watanabe Shoko:Kk 気化装置及びそれを用いた成膜装置並びに気化方法及び成膜方法
US7238653B2 (en) 2003-03-10 2007-07-03 Hynix Semiconductor Inc. Cleaning solution for photoresist and method for forming pattern using the same
US6809005B2 (en) 2003-03-12 2004-10-26 Infineon Technologies Ag Method to fill deep trench structures with void-free polysilicon or silicon
JP2004288916A (ja) 2003-03-24 2004-10-14 Renesas Technology Corp Ｃｖｄ装置
JP4369203B2 (ja) 2003-03-24 2009-11-18 信越化学工業株式会社 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP2004294638A (ja) 2003-03-26 2004-10-21 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト材料およびレジストパターン形成方法
JP4363401B2 (ja) 2003-03-26 2009-11-11 信越半導体株式会社 熱処理用ウェーハ支持具及び熱処理装置
US7223014B2 (en) 2003-03-28 2007-05-29 Intempco Controls Ltd. Remotely programmable integrated sensor transmitter
US6972055B2 (en) 2003-03-28 2005-12-06 Finens Corporation Continuous flow deposition system
US7208389B1 (en) 2003-03-31 2007-04-24 Novellus Systems, Inc. Method of porogen removal from porous low-k films using UV radiation
US20040198069A1 (en) 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
KR100500246B1 (ko) 2003-04-09 2005-07-11 삼성전자주식회사 가스공급장치
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
JP2004336019A (ja) 2003-04-18 2004-11-25 Advanced Lcd Technologies Development Center Co Ltd 成膜方法、半導体素子の形成方法、半導体素子、表示装置の形成方法及び表示装置
US7077973B2 (en) 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
KR100890493B1 (ko) 2003-04-18 2009-03-26 가부시키가이샤 히다치 고쿠사이 덴키 반도체 제조 장치
TW200506093A (en) 2003-04-21 2005-02-16 Aviza Tech Inc System and method for forming multi-component films
US7221553B2 (en) 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
US7183186B2 (en) 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US6953608B2 (en) 2003-04-23 2005-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Solution for FSG induced metal corrosion & metal peeling defects with extra bias liner and smooth RF bias ramp up
US20040211357A1 (en) 2003-04-24 2004-10-28 Gadgil Pradad N. Method of manufacturing a gap-filled structure of a semiconductor device
US20040261712A1 (en) 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
KR200319645Y1 (ko) 2003-04-28 2003-07-12 이규옥 웨이퍼 캐리어 고정 장치
US7601223B2 (en) 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7033113B2 (en) 2003-05-01 2006-04-25 Shell Oil Company Mid-line connector and method for pipe-in-pipe electrical heating
US20090204403A1 (en) 2003-05-07 2009-08-13 Omega Engineering, Inc. Speech generating means for use with signal sensors
US6939817B2 (en) 2003-05-08 2005-09-06 Micron Technology, Inc. Removal of carbon from an insulative layer using ozone
US7265061B1 (en) 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
JP3642572B2 (ja) 2003-05-09 2005-04-27 東芝三菱電機産業システム株式会社 オゾン発生装置およびオゾン発生方法
EP1623454A2 (en) 2003-05-09 2006-02-08 ASM America, Inc. Reactor surface passivation through chemical deactivation
US20040250600A1 (en) 2003-05-12 2004-12-16 Bevers William Daniel Method of mass flow control flow verification and calibration
US20050000428A1 (en) 2003-05-16 2005-01-06 Shero Eric J. Method and apparatus for vaporizing and delivering reactant
USD505590S1 (en) 2003-05-22 2005-05-31 Kraft Foods Holdings, Inc. Susceptor tray
JP4403824B2 (ja) 2003-05-26 2010-01-27 東京エレクトロン株式会社 シリコン窒化膜の成膜方法
JP5342110B2 (ja) 2003-05-27 2013-11-13 アプライド マテリアルズ インコーポレイテッド 前駆物質を含むソースキャニスタ及びこれを用いて特徴部を充填する方法
US7141500B2 (en) 2003-06-05 2006-11-28 American Air Liquide, Inc. Methods for forming aluminum containing films utilizing amino aluminum precursors
US8512798B2 (en) 2003-06-05 2013-08-20 Superpower, Inc. Plasma assisted metalorganic chemical vapor deposition (MOCVD) system
US7598513B2 (en) 2003-06-13 2009-10-06 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn
US7589003B2 (en) 2003-06-13 2009-09-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
WO2004114368A2 (en) 2003-06-13 2004-12-29 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University METHOD FOR PREPARING GE1-x-ySnxEy (E=P, As, Sb) SEMICONDUCTORS AND RELATED Si-Ge-Sn-E AND Si-Ge-E ANALOGS
KR100724181B1 (ko) 2003-06-16 2007-05-31 동경 엘렉트론 주식회사 성막 방법, 반도체 장치의 제조 방법, 반도체 장치 및 성막장치
JP2007523994A (ja) 2003-06-18 2007-08-23 アプライド　マテリアルズ　インコーポレイテッド バリヤ物質の原子層堆積
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
KR20050001793A (ko) 2003-06-26 2005-01-07 삼성전자주식회사 단원자층 증착 공정의 실시간 분석 방법
DE10328660B3 (de) 2003-06-26 2004-12-02 Infineon Technologies Ag Verfahren zum Bestimmen der Temperatur eines Halbleiterwafers
US20100129548A1 (en) 2003-06-27 2010-05-27 Sundew Technologies, Llc Ald apparatus and method
WO2005003406A2 (en) 2003-06-27 2005-01-13 Sundew Technologies, Llc Apparatus and method for chemical source vapor pressure control
WO2005007283A2 (en) 2003-07-08 2005-01-27 Sundew Technologies, Llc Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
US7547363B2 (en) 2003-07-08 2009-06-16 Tosoh Finechem Corporation Solid organometallic compound-filled container and filling method thereof
US7055875B2 (en) 2003-07-11 2006-06-06 Asyst Technologies, Inc. Ultra low contact area end effector
JP4298421B2 (ja) 2003-07-23 2009-07-22 エスペック株式会社 サーマルプレートおよび試験装置
US6909839B2 (en) 2003-07-23 2005-06-21 Advanced Technology Materials, Inc. Delivery systems for efficient vaporization of precursor source material
US7122481B2 (en) 2003-07-25 2006-10-17 Intel Corporation Sealing porous dielectrics with silane coupling reagents
US7399388B2 (en) 2003-07-25 2008-07-15 Applied Materials, Inc. Sequential gas flow oxide deposition technique
EP1697727B1 (en) 2003-07-25 2007-10-03 Lightwind Corporation Method and apparatus for monitoring chemical processes
US7361447B2 (en) 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
WO2005017963A2 (en) 2003-08-04 2005-02-24 Asm America, Inc. Surface preparation prior to deposition on germanium
EP1661161A2 (en) 2003-08-07 2006-05-31 Sundew Technologies, LLC Perimeter partition-valve with protected seals
KR100536604B1 (ko) 2003-08-14 2005-12-14 삼성전자주식회사 고밀도 플라즈마 증착법을 이용한 갭필 방법
JP2005072405A (ja) 2003-08-27 2005-03-17 Sony Corp 薄膜の形成方法および半導体装置の製造方法
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
JP3881973B2 (ja) 2003-08-29 2007-02-14 三菱重工業株式会社 窒化シリコン膜の成膜方法
US8152922B2 (en) 2003-08-29 2012-04-10 Asm America, Inc. Gas mixer and manifold assembly for ALD reactor
KR20060064067A (ko) 2003-09-03 2006-06-12 동경 엘렉트론 주식회사 가스 처리 장치 및 처리 가스 토출 기구의 방열 방법
JP4235066B2 (ja) 2003-09-03 2009-03-04 日本エー・エス・エム株式会社 薄膜形成方法
US7335277B2 (en) 2003-09-08 2008-02-26 Hitachi High-Technologies Corporation Vacuum processing apparatus
US7235482B2 (en) 2003-09-08 2007-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
US7414281B1 (en) 2003-09-09 2008-08-19 Spansion Llc Flash memory with high-K dielectric material between substrate and gate
KR100551138B1 (ko) 2003-09-09 2006-02-10 어댑티브프라즈마테크놀로지 주식회사 균일한 플라즈마 발생을 위한 적응형 플라즈마 소스
US7132201B2 (en) 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
US7223970B2 (en) 2003-09-17 2007-05-29 Sionex Corporation Solid-state gas flow generator and related systems, applications, and methods
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US6911399B2 (en) 2003-09-19 2005-06-28 Applied Materials, Inc. Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
CN101914760B (zh) 2003-09-19 2012-08-29 株式会社日立国际电气 半导体装置的制造方法及衬底处理装置
US20070137794A1 (en) 2003-09-24 2007-06-21 Aviza Technology, Inc. Thermal processing system with across-flow liner
US20050098107A1 (en) 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
JP4524554B2 (ja) 2003-09-25 2010-08-18 信越化学工業株式会社 γ，δ−不飽和カルボン酸及びそのシリルエステルの製造方法、カルボキシル基を有する有機ケイ素化合物及びその製造方法
US7156380B2 (en) 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
US6875677B1 (en) 2003-09-30 2005-04-05 Sharp Laboratories Of America, Inc. Method to control the interfacial layer for deposition of high dielectric constant films
US7205247B2 (en) 2003-09-30 2007-04-17 Aviza Technology, Inc. Atomic layer deposition of hafnium-based high-k dielectric
US20050069651A1 (en) 2003-09-30 2005-03-31 Tokyo Electron Limited Plasma processing system
US6982046B2 (en) 2003-10-01 2006-01-03 General Electric Company Light sources with nanometer-sized VUV radiation-absorbing phosphors
US7408225B2 (en) * 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US6974781B2 (en) 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
WO2005042160A2 (en) 2003-10-29 2005-05-12 Asm America, Inc. Reaction system for growing a thin film
US20050095859A1 (en) 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US20050101843A1 (en) 2003-11-06 2005-05-12 Welch Allyn, Inc. Wireless disposable physiological sensor
US7329947B2 (en) 2003-11-07 2008-02-12 Sumitomo Mitsubishi Silicon Corporation Heat treatment jig for semiconductor substrate
US8313277B2 (en) 2003-11-10 2012-11-20 Brooks Automation, Inc. Semiconductor manufacturing process modules
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US20050153571A1 (en) 2003-11-17 2005-07-14 Yoshihide Senzaki Nitridation of high-k dielectric films
TW200527513A (en) 2003-11-20 2005-08-16 Hitachi Int Electric Inc Method for manufacturing semiconductor device and substrate processing apparatus
KR100550641B1 (ko) 2003-11-22 2006-02-09 주식회사 하이닉스반도체 산화하프늄과 산화알루미늄이 혼합된 유전막 및 그 제조방법
KR20050053417A (ko) 2003-12-02 2005-06-08 한국전자통신연구원 래디칼 보조 산화 장치
US20050120805A1 (en) 2003-12-04 2005-06-09 John Lane Method and apparatus for substrate temperature control
KR20050054122A (ko) 2003-12-04 2005-06-10 성명모 자외선 원자층 증착법을 이용한 박막 제조 방법
JP4725085B2 (ja) 2003-12-04 2011-07-13 株式会社豊田中央研究所 非晶質炭素、非晶質炭素被膜部材および非晶質炭素膜の成膜方法
JP2005172489A (ja) 2003-12-09 2005-06-30 Tokyo Yogyo Co Ltd 溶湯用測温プローブ
US7431966B2 (en) 2003-12-09 2008-10-07 Micron Technology, Inc. Atomic layer deposition method of depositing an oxide on a substrate
US7143897B1 (en) 2003-12-09 2006-12-05 H20 International, Inc. Water filter
KR100519798B1 (ko) 2003-12-11 2005-10-10 삼성전자주식회사 향상된 생산성을 갖는 박막 형성 방법
WO2005061759A1 (en) 2003-12-22 2005-07-07 Seco Tools Ab Carrier body and method for coating cutting tools.
US7645341B2 (en) 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US20050148162A1 (en) 2004-01-02 2005-07-07 Huajie Chen Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gases
KR100620673B1 (ko) 2004-01-05 2006-09-13 주식회사 하이닉스반도체 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성 방법
KR100593960B1 (ko) 2004-01-09 2006-06-30 병호 최 광원자층 증착장치 및 증착방법
KR100549273B1 (ko) 2004-01-15 2006-02-03 주식회사 테라세미콘 반도체 제조장치의 기판홀더
JP4513329B2 (ja) 2004-01-16 2010-07-28 東京エレクトロン株式会社 処理装置
US7071051B1 (en) 2004-01-20 2006-07-04 Advanced Micro Devices, Inc. Method for forming a thin, high quality buffer layer in a field effect transistor and related structure
US7005227B2 (en) 2004-01-21 2006-02-28 Intel Corporation One component EUV photoresist
US7354847B2 (en) 2004-01-26 2008-04-08 Taiwan Semiconductor Manufacturing Company Method of trimming technology
KR101118863B1 (ko) 2004-01-30 2012-03-19 도쿄엘렉트론가부시키가이샤 유체 간극을 갖는 기판 홀더 및 그 기판 홀더를 제조하는방법
US7163393B2 (en) 2004-02-02 2007-01-16 Sumitomo Mitsubishi Silicon Corporation Heat treatment jig for semiconductor silicon substrate
DE102004005385A1 (de) 2004-02-03 2005-10-20 Infineon Technologies Ag Verwendung von gelösten Hafniumalkoxiden bzw. Zirkoniumalkoxiden als Precursoren für Hafniumoxid- und Hafniumoxynitridschichten bzw. Zirkoniumoxid- und Zirkoniumoxynitridschichten
US20050229849A1 (en) 2004-02-13 2005-10-20 Applied Materials, Inc. High productivity plasma processing chamber
TWI263709B (en) 2004-02-17 2006-10-11 Ind Tech Res Inst Structure of strain relaxed thin Si/Ge epitaxial layer and fabricating method thereof
US20050181535A1 (en) 2004-02-17 2005-08-18 Yun Sun J. Method of fabricating passivation layer for organic devices
US20050187647A1 (en) 2004-02-19 2005-08-25 Kuo-Hua Wang Intelligent full automation controlled flow for a semiconductor furnace tool
US7088003B2 (en) 2004-02-19 2006-08-08 International Business Machines Corporation Structures and methods for integration of ultralow-k dielectrics with improved reliability
JP4698251B2 (ja) 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20100297391A1 (en) 2004-02-25 2010-11-25 General Nanotechnoloy Llc Diamond capsules and methods of manufacture
US7958842B2 (en) 2004-02-27 2011-06-14 Hitachi Kokusai Electric Inc. Substrate processing apparatus
US20060062910A1 (en) 2004-03-01 2006-03-23 Meiere Scott H Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof
US20050214458A1 (en) 2004-03-01 2005-09-29 Meiere Scott H Low zirconium hafnium halide compositions
CA2552615C (en) 2004-03-02 2014-08-26 Rosemount Inc. Process device with improved power generation
JP4879159B2 (ja) 2004-03-05 2012-02-22 アプライド マテリアルズ インコーポレイテッド アモルファス炭素膜堆積のためのｃｖｄプロセス
CN100373545C (zh) 2004-03-05 2008-03-05 东京毅力科创株式会社 基板处理装置、基板处理方法及程序
US20050233477A1 (en) 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method
JP4246654B2 (ja) 2004-03-08 2009-04-02 株式会社日立ハイテクノロジーズ 真空処理装置
US7079740B2 (en) 2004-03-12 2006-07-18 Applied Materials, Inc. Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides
KR100538096B1 (ko) 2004-03-16 2005-12-21 삼성전자주식회사 원자층 증착 방법을 이용하는 커패시터 형성 방법
US7053010B2 (en) 2004-03-22 2006-05-30 Micron Technology, Inc. Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US20050214457A1 (en) 2004-03-29 2005-09-29 Applied Materials, Inc. Deposition of low dielectric constant films by N2O addition
US20050221021A1 (en) 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for performing atomic layer deposition
JPWO2005098922A1 (ja) 2004-03-31 2008-03-06 株式会社日立国際電気 半導体装置の製造方法
US20050221618A1 (en) 2004-03-31 2005-10-06 Amrhein Frederick J System for controlling a plenum output flow geometry
CN1292092C (zh) 2004-04-01 2006-12-27 南昌大学 用于金属有机化学气相沉积设备的双层进气喷头
US7585371B2 (en) 2004-04-08 2009-09-08 Micron Technology, Inc. Substrate susceptors for receiving semiconductor substrates to be deposited upon
US20050227502A1 (en) 2004-04-12 2005-10-13 Applied Materials, Inc. Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US20060019502A1 (en) 2004-07-23 2006-01-26 Park Beom S Method of controlling the film properties of a CVD-deposited silicon nitride film
WO2005104204A1 (ja) 2004-04-21 2005-11-03 Hitachi Kokusai Electric Inc. 熱処理装置
USD553104S1 (en) 2004-04-21 2007-10-16 Tokyo Electron Limited Absorption board for an electric chuck used in semiconductor manufacture
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
EP1756561A1 (en) 2004-04-28 2007-02-28 Sionex Corporation System and method for ion species analysis with enhanced condition control and data interpretation using differential mobility spectrometers
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
ES2363089T3 (es) 2004-04-30 2011-07-20 Dichroic Cell S.R.L. Método para producir sustratos de ge virtuales para la integración iii/v sobre si (001).
US7049247B2 (en) 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
US6982208B2 (en) 2004-05-03 2006-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method for producing high throughput strained-Si channel MOSFETS
JP2005322668A (ja) 2004-05-06 2005-11-17 Renesas Technology Corp 成膜装置および成膜方法
US7109114B2 (en) 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
US20050252447A1 (en) 2004-05-11 2005-11-17 Applied Materials, Inc. Gas blocker plate for improved deposition
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
WO2005109486A1 (en) 2004-05-12 2005-11-17 Viatron Technologies Inc. System for heat treatment of semiconductor device
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US7748138B2 (en) 2004-05-13 2010-07-06 Tokyo Electron Limited Particle removal method for a substrate transfer mechanism and apparatus
KR100469132B1 (ko) 2004-05-18 2005-01-29 주식회사 아이피에스 주기적 펄스 두 단계 플라즈마 원자층 증착장치 및 방법
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US20060019033A1 (en) 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
JP2005340251A (ja) 2004-05-24 2005-12-08 Shin Etsu Chem Co Ltd プラズマ処理装置用のシャワープレート及びプラズマ処理装置
US7271093B2 (en) 2004-05-24 2007-09-18 Asm Japan K.K. Low-carbon-doped silicon oxide film and damascene structure using same
US20050266173A1 (en) 2004-05-26 2005-12-01 Tokyo Electron Limited Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
US7622005B2 (en) 2004-05-26 2009-11-24 Applied Materials, Inc. Uniformity control for low flow process and chamber to chamber matching
US7580388B2 (en) 2004-06-01 2009-08-25 Lg Electronics Inc. Method and apparatus for providing enhanced messages on common control channel in wireless communication system
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US7037794B2 (en) 2004-06-09 2006-05-02 International Business Machines Corporation Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain
DE602005023792D1 (de) 2004-06-10 2010-11-04 Humanscale Corp Mechanismus zur Positionseinstellung einer befestigten Vorrichtung
KR100589062B1 (ko) 2004-06-10 2006-06-12 삼성전자주식회사 원자층 적층 방식의 박막 형성방법 및 이를 이용한 반도체소자의 커패시터 형성방법
US7396743B2 (en) 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
US7132360B2 (en) 2004-06-10 2006-11-07 Freescale Semiconductor, Inc. Method for treating a semiconductor surface to form a metal-containing layer
JP4565897B2 (ja) 2004-06-14 2010-10-20 株式会社Ａｄｅｋａ 薄膜形成用原料及び薄膜の製造方法
US7399570B2 (en) 2004-06-18 2008-07-15 Hynix Semiconductor Inc. Water-soluble negative photoresist polymer and composition containing the same
JP4534619B2 (ja) 2004-06-21 2010-09-01 株式会社Ｓｕｍｃｏ 半導体シリコン基板用熱処理治具
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
KR101247857B1 (ko) 2004-06-21 2013-03-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR20050121426A (ko) 2004-06-22 2005-12-27 삼성에스디아이 주식회사 탄소나노튜브 제조용 촉매의 제조 방법
US7244958B2 (en) 2004-06-24 2007-07-17 International Business Machines Corporation Integration of strained Ge into advanced CMOS technology
US7073834B2 (en) 2004-06-25 2006-07-11 Applied Materials, Inc. Multiple section end effector assembly
US7157327B2 (en) 2004-07-01 2007-01-02 Infineon Technologies Ag Void free, silicon filled trenches in semiconductors
KR100614801B1 (ko) 2004-07-05 2006-08-22 삼성전자주식회사 반도체 장치의 막 형성방법
US7363195B2 (en) 2004-07-07 2008-04-22 Sensarray Corporation Methods of configuring a sensor network
CN101133475B (zh) 2004-07-09 2012-02-01 皇家飞利浦电子股份有限公司 带有反射器的uvc/vuv电介质阻挡放电灯
US7422653B2 (en) 2004-07-13 2008-09-09 Applied Materials, Inc. Single-sided inflatable vertical slit valve
WO2006006377A1 (ja) 2004-07-13 2006-01-19 Hitachi Kokusai Electric Inc. 基板処理装置および半導体装置の製造方法
US7094442B2 (en) 2004-07-13 2006-08-22 Applied Materials, Inc. Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon
US7409263B2 (en) 2004-07-14 2008-08-05 Applied Materials, Inc. Methods and apparatus for repositioning support for a substrate carrier
KR100578819B1 (ko) 2004-07-15 2006-05-11 삼성전자주식회사 원자층 적층 방법과 이를 이용한 게이트 구조물의 제조방법 및 커패시터의 제조 방법
US20060016783A1 (en) 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
US20060021703A1 (en) 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
ATE378443T1 (de) 2004-07-30 2007-11-15 Lpe Spa Epitaxiereaktor mit suszeptorgesteuerter positionierung
JP4417197B2 (ja) 2004-07-30 2010-02-17 住友大阪セメント株式会社 サセプタ装置
KR100689401B1 (ko) 2004-07-30 2007-03-08 주식회사 하이닉스반도체 포토레지스트 중합체 및 이를 함유하는 포토레지스트 조성물
US7689687B2 (en) 2004-07-30 2010-03-30 Fisher-Rosemount Systems, Inc. Communication controller with automatic time stamping
US20060021572A1 (en) 2004-07-30 2006-02-02 Colorado School Of Mines High Vacuum Plasma-Assisted Chemical Vapor Deposition System
JP4718141B2 (ja) 2004-08-06 2011-07-06 東京エレクトロン株式会社 薄膜形成方法及び薄膜形成装置
KR101114219B1 (ko) 2004-08-09 2012-03-05 주성엔지니어링(주) 광원을 포함하는 원자층 증착장치 및 이를 이용한 증착방법
US7470633B2 (en) 2004-08-09 2008-12-30 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
US7504344B2 (en) 2004-08-09 2009-03-17 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
JP2006059931A (ja) 2004-08-18 2006-03-02 Canon Anelva Corp 急速加熱処理装置
US20060040054A1 (en) 2004-08-18 2006-02-23 Pearlstein Ronald M Passivating ALD reactor chamber internal surfaces to prevent residue buildup
US7119032B2 (en) 2004-08-23 2006-10-10 Air Products And Chemicals, Inc. Method to protect internal components of semiconductor processing equipment using layered superlattice materials
KR101071136B1 (ko) 2004-08-27 2011-10-10 엘지디스플레이 주식회사 평판표시장치의 제조를 위한 기판의 박막처리장치
ITMI20041677A1 (it) 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
US8158488B2 (en) 2004-08-31 2012-04-17 Micron Technology, Inc. Method of increasing deposition rate of silicon dioxide on a catalyst
DE102004042431B4 (de) 2004-08-31 2008-07-03 Schott Ag Verfahren und Vorrichtung zur Plasmabeschichtung von Werkstücken mit spektraler Auswertung der Prozessparameter und Verwendung der Vorrichtung
US7910288B2 (en) 2004-09-01 2011-03-22 Micron Technology, Inc. Mask material conversion
US7087536B2 (en) 2004-09-01 2006-08-08 Applied Materials Silicon oxide gapfill deposition using liquid precursors
US7253084B2 (en) 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
JP2006108629A (ja) 2004-09-10 2006-04-20 Toshiba Corp 半導体装置の製造方法
US20060137609A1 (en) 2004-09-13 2006-06-29 Puchacz Jerzy P Multi-single wafer processing apparatus
US7582891B2 (en) 2004-09-16 2009-09-01 Arizona Board Of Regents, A Corporate Body Organized Under Arizona Law, Acting On Behalf Of Arizona State University Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
US20060060930A1 (en) 2004-09-17 2006-03-23 Metz Matthew V Atomic layer deposition of high dielectric constant gate dielectrics
JP4698190B2 (ja) 2004-09-22 2011-06-08 川惣電機工業株式会社 測温装置
JP2006097044A (ja) 2004-09-28 2006-04-13 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 成膜用前駆体、ルテニウム含有膜の成膜方法、ルテニウム膜の成膜方法、ルテニウム酸化物膜の成膜方法およびルテニウム酸塩膜の成膜方法
JP4572100B2 (ja) 2004-09-28 2010-10-27 日本エー・エス・エム株式会社 プラズマ処理装置
US7806587B2 (en) 2004-09-29 2010-10-05 Citizen Holdings Co., Ltd. Electronic clinical thermometer and method of producing the same
DE102005045081B4 (de) 2004-09-29 2011-07-07 Covalent Materials Corp. Suszeptor
US7361958B2 (en) 2004-09-30 2008-04-22 Intel Corporation Nonplanar transistors with metal gate electrodes
US7241475B2 (en) 2004-09-30 2007-07-10 The Aerospace Corporation Method for producing carbon surface films by plasma exposure of a carbide compound
US6874247B1 (en) 2004-10-12 2005-04-05 Tsang-Hung Hsu Toothbrush dryer
US20060257563A1 (en) 2004-10-13 2006-11-16 Seok-Joo Doh Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique
US20060099782A1 (en) 2004-10-15 2006-05-11 Massachusetts Institute Of Technology Method for forming an interface between germanium and other materials
US7780440B2 (en) 2004-10-19 2010-08-24 Canon Anelva Corporation Substrate supporting/transferring tray
US7790633B1 (en) 2004-10-26 2010-09-07 Novellus Systems, Inc. Sequential deposition/anneal film densification method
JP2006128188A (ja) 2004-10-26 2006-05-18 Nikon Corp 基板搬送装置、基板搬送方法および露光装置
US7163900B2 (en) 2004-11-01 2007-01-16 Infineon Technologies Ag Using polydentate ligands for sealing pores in low-k dielectrics
JP2006135161A (ja) 2004-11-08 2006-05-25 Canon Inc 絶縁膜の形成方法及び装置
JP4435666B2 (ja) 2004-11-09 2010-03-24 東京エレクトロン株式会社 プラズマ処理方法、成膜方法
KR100782369B1 (ko) 2004-11-11 2007-12-07 삼성전자주식회사 반도체 제조장치
US7678682B2 (en) 2004-11-12 2010-03-16 Axcelis Technologies, Inc. Ultraviolet assisted pore sealing of porous low k dielectric films
US7428958B2 (en) 2004-11-15 2008-09-30 Nikon Corporation Substrate conveyor apparatus, substrate conveyance method and exposure apparatus
KR100773755B1 (ko) 2004-11-18 2007-11-09 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
TWI538013B (zh) 2004-11-18 2016-06-11 尼康股份有限公司 A position measuring method, a position control method, a measuring method, a loading method, an exposure method and an exposure apparatus, and a device manufacturing method
US20060107898A1 (en) 2004-11-19 2006-05-25 Blomberg Tom E Method and apparatus for measuring consumption of reactants
CN100573803C (zh) 2004-11-24 2009-12-23 Oc欧瑞康巴尔斯公司 用于非常大面积基片的真空处理室
US20060108221A1 (en) 2004-11-24 2006-05-25 William Goodwin Method and apparatus for improving measuring accuracy in gas monitoring systems
US7722737B2 (en) 2004-11-29 2010-05-25 Applied Materials, Inc. Gas distribution system for improved transient phase deposition
US20060113806A1 (en) 2004-11-29 2006-06-01 Asm Japan K.K. Wafer transfer mechanism
JP2006153706A (ja) 2004-11-30 2006-06-15 Taiyo Nippon Sanso Corp 測温体および気相成長装置
US20060113675A1 (en) 2004-12-01 2006-06-01 Chung-Liang Chang Barrier material and process for Cu interconnect
US7368377B2 (en) 2004-12-09 2008-05-06 Interuniversitair Microelektronica Centrum (Imec) Vzw Method for selective deposition of a thin self-assembled monolayer
US7271463B2 (en) 2004-12-10 2007-09-18 Micron Technology, Inc. Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7290813B2 (en) 2004-12-16 2007-11-06 Asyst Technologies, Inc. Active edge grip rest pad
KR100558922B1 (ko) 2004-12-16 2006-03-10 (주)퓨전에이드 박막 증착장치 및 방법
US7396732B2 (en) 2004-12-17 2008-07-08 Interuniversitair Microelektronica Centrum Vzw (Imec) Formation of deep trench airgaps and related applications
US7396412B2 (en) 2004-12-22 2008-07-08 Sokudo Co., Ltd. Coat/develop module with shared dispense
JP4560681B2 (ja) 2004-12-24 2010-10-13 ミネベア株式会社 多灯式放電灯点灯装置
KR20060076714A (ko) 2004-12-28 2006-07-04 에이에스엠지니텍코리아 주식회사 원자층 증착기
JP2006186271A (ja) 2004-12-28 2006-07-13 Sharp Corp 気相成長装置および成膜済基板の製造方法
WO2006071716A2 (en) 2004-12-29 2006-07-06 Biogen Idec Ma Inc. Bioreactor process control system and method
US7846499B2 (en) 2004-12-30 2010-12-07 Asm International N.V. Method of pulsing vapor precursors in an ALD reactor
US7482247B1 (en) 2004-12-30 2009-01-27 Novellus Systems, Inc. Conformal nanolaminate dielectric deposition and etch bag gap fill process
WO2006073871A1 (en) 2004-12-30 2006-07-13 Applied Materials, Inc. Line edge roughness reduction compatible with trimming
JP2006188729A (ja) 2005-01-05 2006-07-20 Hitachi Kokusai Electric Inc 基板処理装置
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7598516B2 (en) 2005-01-07 2009-10-06 International Business Machines Corporation Self-aligned process for nanotube/nanowire FETs
US7169668B2 (en) 2005-01-09 2007-01-30 United Microelectronics Corp. Method of manufacturing a split-gate flash memory device
JP2008533697A (ja) 2005-01-18 2008-08-21 エーエスエム アメリカ インコーポレイテッド ウェハ支持ピン部材
JP4934595B2 (ja) 2005-01-18 2012-05-16 エーエスエム アメリカ インコーポレイテッド 薄膜成長用反応装置
US20060156980A1 (en) 2005-01-19 2006-07-20 Samsung Electronics Co., Ltd. Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
US7964380B2 (en) 2005-01-21 2011-06-21 Argylia Technologies Nanoparticles for manipulation of biopolymers and methods of thereof
JP2006203120A (ja) 2005-01-24 2006-08-03 Toshiba Corp 半導体装置の製造方法
KR100640550B1 (ko) 2005-01-26 2006-10-31 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
US7438949B2 (en) 2005-01-27 2008-10-21 Applied Materials, Inc. Ruthenium containing layer deposition method
US20060240187A1 (en) 2005-01-27 2006-10-26 Applied Materials, Inc. Deposition of an intermediate catalytic layer on a barrier layer for copper metallization
WO2006080535A1 (ja) 2005-01-31 2006-08-03 Ube Industries, Ltd. 窒化物赤色蛍光体およびその製造方法
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US7298009B2 (en) 2005-02-01 2007-11-20 Infineon Technologies Ag Semiconductor method and device with mixed orientation substrate
US7135402B2 (en) 2005-02-01 2006-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Sealing pores of low-k dielectrics using CxHy
KR100585178B1 (ko) 2005-02-05 2006-05-30 삼성전자주식회사 금속 게이트 전극을 가지는 ＦｉｎＦＥＴ을 포함하는반도체 소자 및 그 제조방법
US20060182885A1 (en) 2005-02-14 2006-08-17 Xinjian Lei Preparation of metal silicon nitride films via cyclic deposition
WO2006087893A1 (ja) 2005-02-17 2006-08-24 Hitachi Kokusai Electric Inc. 基板処理方法および基板処理装置
CN101527263B (zh) 2005-02-17 2013-03-20 株式会社日立国际电气 半导体器件的制造方法
EP1851794A1 (en) 2005-02-22 2007-11-07 ASM America, Inc. Plasma pre-treating surfaces for atomic layer deposition
US7410340B2 (en) 2005-02-24 2008-08-12 Asyst Technologies, Inc. Direct tool loading
KR100667598B1 (ko) 2005-02-25 2007-01-12 주식회사 아이피에스 반도체 처리 장치
JP4764028B2 (ja) 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR100854995B1 (ko) 2005-03-02 2008-08-28 삼성전자주식회사 고밀도 플라즈마 화학 기상 증착 장치
US6972478B1 (en) 2005-03-07 2005-12-06 Advanced Micro Devices, Inc. Integrated circuit and method for its manufacture
US7629267B2 (en) 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
JP4258518B2 (ja) 2005-03-09 2009-04-30 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP4214124B2 (ja) 2005-03-14 2009-01-28 株式会社バイオエコーネット 耳式体温計
US7211525B1 (en) 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
US7376520B2 (en) 2005-03-16 2008-05-20 Lam Research Corporation System and method for gas flow verification
US20060211259A1 (en) 2005-03-21 2006-09-21 Maes Jan W Silicon oxide cap over high dielectric constant films
US8974868B2 (en) 2005-03-21 2015-03-10 Tokyo Electron Limited Post deposition plasma cleaning system and method
US7314835B2 (en) 2005-03-21 2008-01-01 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
KR100669828B1 (ko) 2005-03-22 2007-01-16 성균관대학교산학협력단 중성빔을 이용한 원자층 증착장치 및 이 장치를 이용한원자층 증착방법
KR100655431B1 (ko) 2005-03-23 2006-12-11 삼성전자주식회사 웨이퍼와의 접촉 면적을 최소화할 수 있는 웨이퍼 캐리어 및 이를 이용한 웨이퍼 세정방법
US7422636B2 (en) 2005-03-25 2008-09-09 Tokyo Electron Limited Plasma enhanced atomic layer deposition system having reduced contamination
JP2006278058A (ja) 2005-03-28 2006-10-12 Matsushita Electric Works Ltd プラズマ処理装置
US20060226117A1 (en) 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US7282415B2 (en) 2005-03-29 2007-10-16 Freescale Semiconductor, Inc. Method for making a semiconductor device with strain enhancement
USD559993S1 (en) 2005-03-30 2008-01-15 Tokyo Electron Limited Cover ring
US20060228898A1 (en) 2005-03-30 2006-10-12 Cory Wajda Method and system for forming a high-k dielectric layer
USD559994S1 (en) 2005-03-30 2008-01-15 Tokyo Electron Limited Cover ring
US7479198B2 (en) 2005-04-07 2009-01-20 Timothy D'Annunzio Methods for forming nanofiber adhesive structures
KR20080003387A (ko) 2005-04-07 2008-01-07 에비자 테크놀로지, 인크. 다중층, 다중성분 높은-ｋ 막들 및 이들의 증착 방법
KR100640640B1 (ko) 2005-04-19 2006-10-31 삼성전자주식회사 미세 피치의 하드마스크를 이용한 반도체 소자의 미세 패턴형성 방법
JP4694878B2 (ja) 2005-04-20 2011-06-08 Ｏｋｉセミコンダクタ株式会社 半導体製造装置および半導体装置の製造方法
CN101208444A (zh) 2005-04-21 2008-06-25 霍尼韦尔国际公司 钌基材料和钌合金
US7160819B2 (en) 2005-04-25 2007-01-09 Sharp Laboratories Of America, Inc. Method to perform selective atomic layer deposition of zinc oxide
WO2006114781A2 (en) 2005-04-26 2006-11-02 University College Cork - National University Of Ireland, Cork Deposition of materials
US8137465B1 (en) 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
US7544398B1 (en) 2005-04-26 2009-06-09 The Regents Of The Univesity Of California Controlled nano-doping of ultra thin films
US7351057B2 (en) 2005-04-27 2008-04-01 Asm International N.V. Door plate for furnace
US7169018B2 (en) 2005-05-04 2007-01-30 Micrel, Incorporated Wafer carrier checker and method of using same
US7084060B1 (en) 2005-05-04 2006-08-01 International Business Machines Corporation Forming capping layer over metal wire structure using selective atomic layer deposition
US7915173B2 (en) 2005-05-05 2011-03-29 Macronix International Co., Ltd. Shallow trench isolation structure having reduced dislocation density
US7214630B1 (en) 2005-05-06 2007-05-08 Novellus Systems, Inc. PMOS transistor with compressive dielectric capping layer
US20060251827A1 (en) 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
JP4666473B2 (ja) 2005-05-12 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
JP2006319261A (ja) 2005-05-16 2006-11-24 Dainippon Screen Mfg Co Ltd 基板処理装置
US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US20060260545A1 (en) 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
US7101763B1 (en) 2005-05-17 2006-09-05 International Business Machines Corporation Low capacitance junction-isolation for bulk FinFET technology
KR100731164B1 (ko) 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
US20070155138A1 (en) 2005-05-24 2007-07-05 Pierre Tomasini Apparatus and method for depositing silicon germanium films
US7732342B2 (en) 2005-05-26 2010-06-08 Applied Materials, Inc. Method to increase the compressive stress of PECVD silicon nitride films
US8138104B2 (en) 2005-05-26 2012-03-20 Applied Materials, Inc. Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
US8129290B2 (en) 2005-05-26 2012-03-06 Applied Materials, Inc. Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
US20060269690A1 (en) 2005-05-27 2006-11-30 Asm Japan K.K. Formation technology for nanoparticle films having low dielectric constant
US20090029564A1 (en) 2005-05-31 2009-01-29 Tokyo Electron Limited Plasma treatment apparatus and plasma treatment method
US7608490B2 (en) 2005-06-02 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20060275933A1 (en) 2005-06-02 2006-12-07 Applied Materials, Inc. Thermally conductive ceramic tipped contact thermocouple
WO2007027165A1 (en) 2005-06-09 2007-03-08 Axcelis Technologies, Inc. Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications
US8435905B2 (en) 2005-06-13 2013-05-07 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device, and substrate processing apparatus
US20060278524A1 (en) 2005-06-14 2006-12-14 Stowell Michael W System and method for modulating power signals to control sputtering
JP4853857B2 (ja) 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
US7473655B2 (en) 2005-06-17 2009-01-06 Applied Materials, Inc. Method for silicon based dielectric chemical vapor deposition
JP4753173B2 (ja) 2005-06-17 2011-08-24 株式会社フジキン 流体制御装置
JP4728708B2 (ja) 2005-06-17 2011-07-20 日本電気株式会社 配線基板及びその製造方法
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7651955B2 (en) 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20060286774A1 (en) 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7601652B2 (en) 2005-06-21 2009-10-13 Applied Materials, Inc. Method for treating substrates and films with photoexcitation
US20060286819A1 (en) 2005-06-21 2006-12-21 Applied Materials, Inc. Method for silicon based dielectric deposition and clean with photoexcitation
JP2007005582A (ja) 2005-06-24 2007-01-11 Asm Japan Kk 基板搬送装置及びそれを搭載した半導体基板製造装置
US7575990B2 (en) 2005-07-01 2009-08-18 Macronix International Co., Ltd. Method of forming self-aligned contacts and local interconnects
KR100625142B1 (ko) 2005-07-05 2006-09-15 삼성전자주식회사 반도체 장치의 제조 방법
JP4954995B2 (ja) 2005-07-07 2012-06-20 エム ケー エス インストルメンツ インコーポレーテッド マルチ・チャンバ・ツールのためのオゾン・システム
KR20080028963A (ko) 2005-07-08 2008-04-02 에비자 테크놀로지, 인크. 실리콘 함유 필름의 증착 방법
US20070010072A1 (en) 2005-07-09 2007-01-11 Aviza Technology, Inc. Uniform batch film deposition process and films so produced
CN101222983B (zh) 2005-07-09 2012-09-05 康邦权 用于在常压等离子体中疏水和超疏水处理的表面涂覆方法
US7579285B2 (en) 2005-07-11 2009-08-25 Imec Atomic layer deposition method for depositing a layer
US7762755B2 (en) 2005-07-11 2010-07-27 Brooks Automation, Inc. Equipment storage for substrate processing apparatus
US7925378B2 (en) 2005-07-11 2011-04-12 Brooks Automation, Inc. Process apparatus with on-the-fly workpiece centering
TW200702647A (en) 2005-07-13 2007-01-16 Actherm Inc Heat conductive structure of electronic clinical thermometer and clinical thermometer with the same
US7271044B2 (en) 2005-07-21 2007-09-18 International Business Machines Corporation CMOS (complementary metal oxide semiconductor) technology
US7314838B2 (en) 2005-07-21 2008-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a high density dielectric film by chemical vapor deposition
JP2007035747A (ja) 2005-07-25 2007-02-08 Sumitomo Electric Ind Ltd ウェハ保持体およびそれを搭載したウェハプローバ
JP2007035899A (ja) 2005-07-27 2007-02-08 Sumitomo Electric Ind Ltd ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ
TWI313486B (en) 2005-07-28 2009-08-11 Nuflare Technology Inc Position measurement apparatus and method and writing apparatus and method
USD571383S1 (en) 2005-07-29 2008-06-17 Tokyo Electron Limited Top panel for microwave introduction window of a plasma processing apparatus
TWI261313B (en) 2005-07-29 2006-09-01 Ind Tech Res Inst A method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof
TWI327339B (en) 2005-07-29 2010-07-11 Nuflare Technology Inc Vapor phase growing apparatus and vapor phase growing method
USD593585S1 (en) 2005-07-29 2009-06-02 Tokyo Electron Limited Top panel for microwave introduction window of a plasma processing apparatus
USD571831S1 (en) 2005-07-29 2008-06-24 Tokyo Electron Limited Top panel for microwave introduction window of a plasma processing apparatus
US20070028842A1 (en) 2005-08-02 2007-02-08 Makoto Inagawa Vacuum chamber bottom
US20090045829A1 (en) 2005-08-04 2009-02-19 Sumitomo Electric Industries, Ltd. Wafer holder for wafer prober and wafer prober equipped with same
CN101238095B (zh) 2005-08-04 2011-08-10 东曹株式会社 含有金属的化合物,其制备方法、含有金属的薄膜和其形成方法
CN101164156A (zh) 2005-08-05 2008-04-16 东京毅力科创株式会社 基板处理装置和用于该基板处理装置的基板载置台
US20070037412A1 (en) 2005-08-05 2007-02-15 Tokyo Electron Limited In-situ atomic layer deposition
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7312148B2 (en) 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US7335611B2 (en) 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7429532B2 (en) 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
JP4666215B2 (ja) 2005-08-10 2011-04-06 株式会社ダイフク 物品搬送装置
US7229873B2 (en) 2005-08-10 2007-06-12 Texas Instruments Incorporated Process for manufacturing dual work function metal gates in a microelectronics device
JP4727667B2 (ja) 2005-08-16 2011-07-20 株式会社日立国際電気 薄膜形成方法および半導体デバイスの製造方法
US7718225B2 (en) 2005-08-17 2010-05-18 Applied Materials, Inc. Method to control semiconductor film deposition characteristics
WO2007024094A1 (en) 2005-08-24 2007-03-01 Electronics And Telecommunications Research Institute Method of manufacturing vanadium oxide thin film
USD557226S1 (en) 2005-08-25 2007-12-11 Hitachi High-Technologies Corporation Electrode cover for a plasma processing apparatus
USD556704S1 (en) 2005-08-25 2007-12-04 Hitachi High-Technologies Corporation Grounded electrode for a plasma processing apparatus
US8123968B2 (en) 2005-08-25 2012-02-28 Round Rock Research, Llc Multiple deposition for integration of spacers in pitch multiplication process
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7393736B2 (en) 2005-08-29 2008-07-01 Micron Technology, Inc. Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
JP4815600B2 (ja) 2005-09-06 2011-11-16 株式会社テラセミコン 多結晶シリコン薄膜製造方法及びその製造装置
US20070190362A1 (en) 2005-09-08 2007-08-16 Weidman Timothy W Patterned electroless metallization processes for large area electronics
US20070056850A1 (en) 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056843A1 (en) 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070065578A1 (en) 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
JP2007088113A (ja) 2005-09-21 2007-04-05 Sony Corp 半導体装置の製造方法
US20070066084A1 (en) 2005-09-21 2007-03-22 Cory Wajda Method and system for forming a layer with controllable spstial variation
JP5017950B2 (ja) 2005-09-21 2012-09-05 株式会社Ｓｕｍｃｏ エピタキシャル成長装置の温度管理方法
US7578616B2 (en) 2005-09-22 2009-08-25 Lam Research Corporation Apparatus for determining a temperature of a substrate and methods therefor
WO2007041164A2 (en) 2005-09-30 2007-04-12 Bognar John A Measuring nitrogen oxides and other gases by ozone formation
US7691204B2 (en) 2005-09-30 2010-04-06 Applied Materials, Inc. Film formation apparatus and methods including temperature and emissivity/pattern compensation
US7785658B2 (en) 2005-10-07 2010-08-31 Asm Japan K.K. Method for forming metal wiring structure
US7754906B2 (en) 2005-10-07 2010-07-13 Air Products And Chemicals, Inc. Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides
KR101153118B1 (ko) 2005-10-12 2012-06-07 파나소닉 주식회사 플라즈마 처리장치 및 플라즈마 처리방법
US7294581B2 (en) 2005-10-17 2007-11-13 Applied Materials, Inc. Method for fabricating silicon nitride spacer structures
US7691205B2 (en) 2005-10-18 2010-04-06 Asm Japan K.K. Substrate-supporting device
KR100725108B1 (ko) 2005-10-18 2007-06-04 삼성전자주식회사 가스 공급 장치 및 이를 갖는 기판 가공 장치
US7727828B2 (en) 2005-10-20 2010-06-01 Applied Materials, Inc. Method for fabricating a gate dielectric of a field effect transistor
US7638951B2 (en) 2005-10-27 2009-12-29 Luxim Corporation Plasma lamp with stable feedback amplification and method therefor
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US7906910B2 (en) 2005-10-27 2011-03-15 Luxim Corporation Plasma lamp with conductive material positioned relative to RF feed
US7994721B2 (en) 2005-10-27 2011-08-09 Luxim Corporation Plasma lamp and methods using a waveguide body and protruding bulb
US20070095283A1 (en) 2005-10-31 2007-05-03 Galewski Carl J Pumping System for Atomic Layer Deposition
JP5044931B2 (ja) 2005-10-31 2012-10-10 東京エレクトロン株式会社 ガス供給装置及び基板処理装置
DE102005051994B4 (de) 2005-10-31 2011-12-01 Globalfoundries Inc. Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius
US7399712B1 (en) 2005-10-31 2008-07-15 Novellus Systems, Inc. Method for etching organic hardmasks
US20070119371A1 (en) 2005-11-04 2007-05-31 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
US7695808B2 (en) 2005-11-07 2010-04-13 3M Innovative Properties Company Thermal transfer coating
US7622378B2 (en) 2005-11-09 2009-11-24 Tokyo Electron Limited Multi-step system and method for curing a dielectric film
US7561982B2 (en) 2005-11-10 2009-07-14 Shake Awake Products, LLC Physical attribute recording method and system
JP4940635B2 (ja) 2005-11-14 2012-05-30 東京エレクトロン株式会社 加熱装置、熱処理装置及び記憶媒体
KR100660890B1 (ko) 2005-11-16 2006-12-26 삼성전자주식회사 Ａｌｄ를 이용한 이산화실리콘막 형성 방법
GB2432363B (en) 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
WO2007058120A1 (ja) 2005-11-18 2007-05-24 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
US20070116888A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
US7897217B2 (en) 2005-11-18 2011-03-01 Tokyo Electron Limited Method and system for performing plasma enhanced atomic layer deposition
US20070116873A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US7629277B2 (en) 2005-11-23 2009-12-08 Honeywell International Inc. Frag shield
US7912439B2 (en) 2005-11-25 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
US20070125762A1 (en) 2005-12-01 2007-06-07 Applied Materials, Inc. Multi-zone resistive heater
US7862683B2 (en) 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
US7857506B2 (en) 2005-12-05 2010-12-28 Sencal Llc Disposable, pre-calibrated, pre-validated sensors for use in bio-processing applications
US7963917B2 (en) 2005-12-05 2011-06-21 Echo Therapeutics, Inc. System and method for continuous non-invasive glucose monitoring
US8197599B2 (en) 2005-12-06 2012-06-12 Ulvac, Inc. Gas head and thin-film manufacturing apparatus
US8003919B2 (en) 2005-12-06 2011-08-23 Dainippon Screen Mfg. Co., Ltd. Substrate heat treatment apparatus
JP4666496B2 (ja) 2005-12-07 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films
JP4803578B2 (ja) 2005-12-08 2011-10-26 東京エレクトロン株式会社 成膜方法
US7713584B2 (en) 2005-12-22 2010-05-11 Asm International N.V. Process for producing oxide films
US7381644B1 (en) 2005-12-23 2008-06-03 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
JP4629574B2 (ja) 2005-12-27 2011-02-09 日本発條株式会社 基板支持装置と、その製造方法
KR101296911B1 (ko) 2005-12-28 2013-08-14 엘지디스플레이 주식회사 평판표시소자의 제조장치 및 그의 정전기량 검출장치 및검출방법
TWM292692U (en) 2005-12-29 2006-06-21 Powerchip Semiconductor Corp Thermocouple apparatus
TWI284390B (en) 2006-01-10 2007-07-21 Ind Tech Res Inst Manufacturing method of charge store device
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP5324026B2 (ja) 2006-01-18 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の制御方法
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
WO2007084493A2 (en) 2006-01-19 2007-07-26 Asm America, Inc. High temperature ald inlet manifold
US20080254220A1 (en) 2006-01-20 2008-10-16 Tokyo Electron Limited Plasma processing apparatus
US20070173071A1 (en) 2006-01-20 2007-07-26 International Business Machines Corporation SiCOH dielectric
US8673413B2 (en) 2006-01-27 2014-03-18 Tosoh Finechem Corporation Method for packing solid organometallic compound and packed container
JP4854317B2 (ja) 2006-01-31 2012-01-18 東京エレクトロン株式会社 基板処理方法
US7736437B2 (en) 2006-02-03 2010-06-15 Integrated Materials, Incorporated Baffled liner cover
US20070184179A1 (en) 2006-02-09 2007-08-09 Akshay Waghray Methods and apparatus to monitor a process of depositing a constituent of a multi-constituent gas during production of a composite brake disc
US8057603B2 (en) 2006-02-13 2011-11-15 Tokyo Electron Limited Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber
US20070187363A1 (en) 2006-02-13 2007-08-16 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
JP2007211326A (ja) 2006-02-13 2007-08-23 Nec Electronics Corp 成膜装置および成膜方法
KR101379015B1 (ko) 2006-02-15 2014-03-28 한국에이에스엠지니텍 주식회사 플라즈마 원자층 증착법을 이용한 루테늄 막 증착 방법 및고밀도 루테늄 층
KR101186740B1 (ko) 2006-02-17 2012-09-28 삼성전자주식회사 뱅크형성 방법 및 이에 의해 형성된 뱅크를 함유하는 유기박막 트랜지스터
US20070207275A1 (en) 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
KR20070084683A (ko) 2006-02-21 2007-08-27 국민대학교산학협력단 분자층 증착법
US7354849B2 (en) 2006-02-28 2008-04-08 Intel Corporation Catalytically enhanced atomic layer deposition process
KR101005518B1 (ko) 2006-03-07 2011-01-04 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 기판 처리 방법 및 막 형성 방법
KR101233632B1 (ko) 2006-03-07 2013-02-15 씨케이디 가부시키 가이샤 가스유량 검정유닛
US7740705B2 (en) 2006-03-08 2010-06-22 Tokyo Electron Limited Exhaust apparatus configured to reduce particle contamination in a deposition system
US7794546B2 (en) 2006-03-08 2010-09-14 Tokyo Electron Limited Sealing device and method for a processing system
US7460003B2 (en) 2006-03-09 2008-12-02 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
US7494882B2 (en) 2006-03-10 2009-02-24 Texas Instruments Incorporated Manufacturing a semiconductive device using a controlled atomic layer removal process
KR20070093493A (ko) 2006-03-14 2007-09-19 엘지이노텍 주식회사 서셉터 및 반도체 제조장치
US8268078B2 (en) 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
US20070218200A1 (en) 2006-03-16 2007-09-20 Kenji Suzuki Method and apparatus for reducing particle formation in a vapor distribution system
US7566891B2 (en) 2006-03-17 2009-07-28 Applied Materials, Inc. Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors
US7692171B2 (en) 2006-03-17 2010-04-06 Andrzei Kaszuba Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors
US7410915B2 (en) 2006-03-23 2008-08-12 Asm Japan K.K. Method of forming carbon polymer film using plasma CVD
JP2007266464A (ja) 2006-03-29 2007-10-11 Hitachi Ltd 半導体集積回路装置の製造方法
US7456429B2 (en) 2006-03-29 2008-11-25 Eastman Kodak Company Apparatus for atomic layer deposition
US20070234955A1 (en) 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
US8951478B2 (en) 2006-03-30 2015-02-10 Applied Materials, Inc. Ampoule with a thermally conductive coating
US20070237697A1 (en) 2006-03-31 2007-10-11 Tokyo Electron Limited Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition
US7645484B2 (en) 2006-03-31 2010-01-12 Tokyo Electron Limited Method of forming a metal carbide or metal carbonitride film having improved adhesion
US20070287301A1 (en) 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
US7753584B2 (en) 2006-03-31 2010-07-13 Mesoscribe Technologies, Inc. Thermocouples
US8012442B2 (en) 2006-03-31 2011-09-06 Tokyo Electron Limited Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition
US8097300B2 (en) 2006-03-31 2012-01-17 Tokyo Electron Limited Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition
US7780865B2 (en) 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US7396491B2 (en) 2006-04-06 2008-07-08 Osram Sylvania Inc. UV-emitting phosphor and lamp containing same
JP4943047B2 (ja) 2006-04-07 2012-05-30 東京エレクトロン株式会社 処理装置及び処理方法
US7902074B2 (en) 2006-04-07 2011-03-08 Micron Technology, Inc. Simplified pitch doubling process flow
US8399349B2 (en) 2006-04-18 2013-03-19 Air Products And Chemicals, Inc. Materials and methods of forming controlled void
US20070248767A1 (en) 2006-04-19 2007-10-25 Asm Japan K.K. Method of self-cleaning of carbon-based film
US7410852B2 (en) 2006-04-21 2008-08-12 International Business Machines Corporation Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
FR2900276B1 (fr) 2006-04-25 2008-09-12 St Microelectronics Sa Depot peald d'un materiau a base de silicium
US20070251456A1 (en) 2006-04-27 2007-11-01 Applied Materials, Inc., A Delaware Corporation Composite heater and chill plate
US20070252233A1 (en) 2006-04-28 2007-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8231799B2 (en) 2006-04-28 2012-07-31 Applied Materials, Inc. Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
US7537804B2 (en) 2006-04-28 2009-05-26 Micron Technology, Inc. ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates
US7288463B1 (en) 2006-04-28 2007-10-30 Novellus Systems, Inc. Pulsed deposition layer gap fill with expansion material
US7547633B2 (en) 2006-05-01 2009-06-16 Applied Materials, Inc. UV assisted thermal processing
US7997795B2 (en) 2006-05-02 2011-08-16 Watlow Electric Manufacturing Company Temperature sensors and methods of manufacture thereof
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US20070261868A1 (en) 2006-05-12 2007-11-15 Gross James R Magnetic torque-limiting device and method
US20070266945A1 (en) 2006-05-16 2007-11-22 Asm Japan K.K. Plasma cvd apparatus equipped with plasma blocking insulation plate
US7875312B2 (en) 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
US7718732B2 (en) 2006-05-26 2010-05-18 Ineos Manufacturing Belgium Nv Loop type reactor for polymerization
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
JP2007324350A (ja) 2006-05-31 2007-12-13 Tokyo Electron Ltd 熱処理方法および熱処理装置、ならびに基板処理装置
US20070281105A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20070277735A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20070281082A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Flash Heating in Atomic Layer Deposition
WO2007140813A1 (en) 2006-06-02 2007-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US7623940B2 (en) 2006-06-02 2009-11-24 The Boeing Company Direct-manufactured duct interconnects
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US20080018004A1 (en) 2006-06-09 2008-01-24 Air Products And Chemicals, Inc. High Flow GaCl3 Delivery
JP5543203B2 (ja) 2006-06-16 2014-07-09 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 大気圧グロー放電プラズマを使用した原子層堆積の方法及び装置
JP5045000B2 (ja) 2006-06-20 2012-10-10 東京エレクトロン株式会社 成膜装置、ガス供給装置、成膜方法及び記憶媒体
US7625820B1 (en) 2006-06-21 2009-12-01 Novellus Systems, Inc. Method of selective coverage of high aspect ratio structures with a conformal film
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7554103B2 (en) 2006-06-26 2009-06-30 Applied Materials, Inc. Increased tool utilization/reduction in MWBC for UV curing chamber
US7494272B2 (en) 2006-06-27 2009-02-24 Applied Materials, Inc. Dynamic surface annealing using addressable laser array with pyrometry feedback
US7867578B2 (en) 2006-06-28 2011-01-11 Applied Materials, Inc. Method for depositing an amorphous carbon film with improved density and step coverage
US20080153311A1 (en) 2006-06-28 2008-06-26 Deenesh Padhi Method for depositing an amorphous carbon film with improved density and step coverage
US7501355B2 (en) 2006-06-29 2009-03-10 Applied Materials, Inc. Decreasing the etch rate of silicon nitride by carbon addition
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
WO2008004278A1 (fr) 2006-07-04 2008-01-10 Toshiba Mitsubishi-Electric Industrial Systems Corporation Procédé et dispositif de concentration / dilution de gaz spécifique
JP4193883B2 (ja) 2006-07-05 2008-12-10 住友電気工業株式会社 有機金属気相成長装置
JP5027573B2 (ja) 2006-07-06 2012-09-19 株式会社小松製作所 温度センサおよび温調装置
KR100799735B1 (ko) 2006-07-10 2008-02-01 삼성전자주식회사 금속 산화물 형성 방법 및 이를 수행하기 위한 장치
WO2008008737A2 (en) 2006-07-10 2008-01-17 Asyst Technologies, Inc. Variable lot size load port
KR100782484B1 (ko) 2006-07-13 2007-12-05 삼성전자주식회사 열처리 설비
US7981815B2 (en) 2006-07-20 2011-07-19 Hitachi Kokusai Electric Inc. Semiconductor device producing method and substrate processing apparatus
US7795160B2 (en) 2006-07-21 2010-09-14 Asm America Inc. ALD of metal silicate films
KR100791334B1 (ko) 2006-07-26 2008-01-07 삼성전자주식회사 원자층 증착법을 이용한 금속 산화막 형성 방법
FR2904328B1 (fr) 2006-07-27 2008-10-24 St Microelectronics Sa Depot par adsorption sous un champ electrique
US8187679B2 (en) 2006-07-29 2012-05-29 Lotus Applied Technology, Llc Radical-enhanced atomic layer deposition system and method
JP2008041734A (ja) 2006-08-02 2008-02-21 Sony Corp 半導体装置および半導体装置の製造方法
US7749879B2 (en) 2006-08-03 2010-07-06 Micron Technology, Inc. ALD of silicon films on germanium
US8080282B2 (en) 2006-08-08 2011-12-20 Asm Japan K.K. Method for forming silicon carbide film containing oxygen
GB0615722D0 (en) 2006-08-08 2006-09-20 Boc Group Plc Apparatus for conveying a waste stream
US7514375B1 (en) 2006-08-08 2009-04-07 Novellus Systems, Inc. Pulsed bias having high pulse frequency for filling gaps with dielectric material
TW200814131A (en) 2006-08-11 2008-03-16 Schott Ag External electrode fluorescent lamp with optimized operating efficiency
US7935942B2 (en) 2006-08-15 2011-05-03 Varian Semiconductor Equipment Associates, Inc. Technique for low-temperature ion implantation
US20080045030A1 (en) 2006-08-15 2008-02-21 Shigeru Tahara Substrate processing method, substrate processing system and storage medium
US20110027999A1 (en) 2006-08-16 2011-02-03 Freescale Semiconductor, Inc. Etch method in the manufacture of an integrated circuit
CN101506561B (zh) 2006-08-23 2012-04-18 株式会社堀场Stec 组合式气体分配盘装置
JP4961895B2 (ja) 2006-08-25 2012-06-27 東京エレクトロン株式会社 ウェハ搬送装置、ウェハ搬送方法及び記憶媒体
JP4904995B2 (ja) 2006-08-28 2012-03-28 シンフォニアテクノロジー株式会社 ロードポート装置
US7611980B2 (en) 2006-08-30 2009-11-03 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
US20080063798A1 (en) 2006-08-30 2008-03-13 Kher Shreyas S Precursors and hardware for cvd and ald
US20080260963A1 (en) 2007-04-17 2008-10-23 Hyungsuk Alexander Yoon Apparatus and method for pre and post treatment of atomic layer deposition
KR100753020B1 (ko) 2006-08-30 2007-08-30 한국화학연구원 원자층 증착법을 이용한 비휘발성 부유 게이트 메모리소자를 위한 나노적층체의 제조방법
US7690881B2 (en) 2006-08-30 2010-04-06 Asm Japan K.K. Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus
JP4943780B2 (ja) 2006-08-31 2012-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US20080057659A1 (en) 2006-08-31 2008-03-06 Micron Technology, Inc. Hafnium aluminium oxynitride high-K dielectric and metal gates
US7544604B2 (en) 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
JP5138253B2 (ja) 2006-09-05 2013-02-06 東京エレクトロン株式会社 アニール装置
DE502007004378D1 (de) 2006-09-06 2010-08-26 Kistler Holding Ag Temperatursensor mit bearbeitbarer Front
JP4762835B2 (ja) 2006-09-07 2011-08-31 東京エレクトロン株式会社 基板処理方法、基板処理装置、プログラムおよびプログラム記録媒体
JP2008066159A (ja) 2006-09-08 2008-03-21 Noritsu Koki Co Ltd プラズマ発生装置およびそれを用いるワーク処理装置
KR100761857B1 (ko) 2006-09-08 2007-09-28 삼성전자주식회사 반도체 소자의 미세패턴 형성방법 및 이를 이용한 반도체소자의 제조방법
USD613829S1 (en) 2006-09-13 2010-04-13 Hayward Industries, Inc. Circular suction outlet assembly cover
JP2008072030A (ja) 2006-09-15 2008-03-27 Matsushita Electric Ind Co Ltd プラズマ処理装置、プラズマ処理装置の異常検出方法、及びプラズマ処理方法
US7789965B2 (en) 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US7976898B2 (en) 2006-09-20 2011-07-12 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
US7718553B2 (en) 2006-09-21 2010-05-18 Asm Japan K.K. Method for forming insulation film having high density
JP2008074963A (ja) 2006-09-21 2008-04-03 Fujifilm Corp 組成物、膜、およびその製造方法
US7740437B2 (en) 2006-09-22 2010-06-22 Asm International N.V. Processing system with increased cassette storage capacity
US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
JP4814038B2 (ja) 2006-09-25 2011-11-09 株式会社日立国際電気 基板処理装置および反応容器の着脱方法
USD634329S1 (en) 2006-09-26 2011-03-15 Margareta Wastrom Computer platform with forearm support
US8137048B2 (en) 2006-09-27 2012-03-20 Vserv Technologies Wafer processing system with dual wafer robots capable of asynchronous motion
US7476291B2 (en) 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
TWI462179B (zh) 2006-09-28 2014-11-21 Tokyo Electron Ltd 用以形成氧化矽膜之成膜方法與裝置
JP2008085129A (ja) 2006-09-28 2008-04-10 Taiheiyo Cement Corp 基板載置装置
JP2008089320A (ja) 2006-09-29 2008-04-17 Nicom Co Ltd 流量計測装置
DE102006046374B4 (de) 2006-09-29 2010-11-11 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Reduzieren der Lackvergiftung während des Strukturierens von Siliziumnitridschichten in einem Halbleiterbauelement
US7767262B2 (en) 2006-09-29 2010-08-03 Tokyo Electron Limited Nitrogen profile engineering in nitrided high dielectric constant films
TW200822253A (en) 2006-10-02 2008-05-16 Matsushita Electric Ind Co Ltd Component crimping apparatus control method, component crimping apparatus, and measuring tool
KR101480971B1 (ko) 2006-10-10 2015-01-09 에이에스엠 아메리카, 인코포레이티드 전구체 전달 시스템
US8986456B2 (en) 2006-10-10 2015-03-24 Asm America, Inc. Precursor delivery system
USD593969S1 (en) 2006-10-10 2009-06-09 Tokyo Electron Limited Processing chamber for manufacturing semiconductors
CN100451163C (zh) 2006-10-18 2009-01-14 中微半导体设备(上海)有限公司 用于半导体工艺件处理反应器的气体分布装置及其反应器
US8795771B2 (en) 2006-10-27 2014-08-05 Sean T. Barry ALD of metal-containing films using cyclopentadienyl compounds
JP2008108991A (ja) 2006-10-27 2008-05-08 Daihen Corp ワーク保持機構
US7851232B2 (en) 2006-10-30 2010-12-14 Novellus Systems, Inc. UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
US7888273B1 (en) 2006-11-01 2011-02-15 Novellus Systems, Inc. Density gradient-free gap fill
US7727864B2 (en) 2006-11-01 2010-06-01 Asm America, Inc. Controlled composition using plasma-enhanced atomic layer deposition
US7955516B2 (en) 2006-11-02 2011-06-07 Applied Materials, Inc. Etching of nano-imprint templates using an etch reactor
JP2008117903A (ja) 2006-11-02 2008-05-22 Toshiba Corp 半導体装置の製造方法
WO2008056295A1 (en) 2006-11-09 2008-05-15 Nxp B.V. A semiconductor device and a method of manufacturing thereof
US8084368B2 (en) 2006-11-09 2011-12-27 Ulvac, Inc. Method of forming barrier film
US20080179104A1 (en) 2006-11-14 2008-07-31 Smith International, Inc. Nano-reinforced wc-co for improved properties
US7749574B2 (en) 2006-11-14 2010-07-06 Applied Materials, Inc. Low temperature ALD SiO2
US7776395B2 (en) 2006-11-14 2010-08-17 Applied Materials, Inc. Method of depositing catalyst assisted silicates of high-k materials
US7671134B2 (en) 2006-11-15 2010-03-02 Brady Worldwide, Inc. Compositions with improved adhesion to low surface energy substrates
US7976634B2 (en) 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
WO2008064080A1 (en) 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies High volume delivery system for gallium trichloride
US20080118334A1 (en) 2006-11-22 2008-05-22 Bonora Anthony C Variable pitch storage shelves
US7758698B2 (en) 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US20080124946A1 (en) 2006-11-28 2008-05-29 Air Products And Chemicals, Inc. Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films
US20080121177A1 (en) 2006-11-28 2008-05-29 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US7807575B2 (en) 2006-11-29 2010-10-05 Micron Technology, Inc. Methods to reduce the critical dimension of semiconductor devices
US20080132046A1 (en) 2006-12-04 2008-06-05 Varian Semiconductor Equipment Associates, Inc. Plasma Doping With Electronically Controllable Implant Angle
US20080178805A1 (en) 2006-12-05 2008-07-31 Applied Materials, Inc. Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
US20080142483A1 (en) 2006-12-07 2008-06-19 Applied Materials, Inc. Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills
EP2089897A2 (en) 2006-12-07 2009-08-19 Innovalight, Inc. Methods for creating a densified group iv semiconductor nanoparticle thin film
US7906174B1 (en) 2006-12-07 2011-03-15 Novellus Systems, Inc. PECVD methods for producing ultra low-k dielectric films using UV treatment
US20080202689A1 (en) 2006-12-08 2008-08-28 Tes Co., Ltd. Plasma processing apparatus
US20080173238A1 (en) 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel
US7960236B2 (en) 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
WO2008072164A1 (en) 2006-12-15 2008-06-19 Nxp B.V. Transistor device and method of manufacturing such a transistor device
USD583395S1 (en) 2006-12-15 2008-12-23 Tokyo Electron Limited Cover for a heater stage of a plasma processing apparatus
CN101563195B (zh) 2006-12-19 2013-06-19 皇家飞利浦电子股份有限公司 加热生产线中的物体的系统和方法
US8178436B2 (en) 2006-12-21 2012-05-15 Intel Corporation Adhesion and electromigration performance at an interface between a dielectric and metal
JP2008166360A (ja) 2006-12-27 2008-07-17 Hitachi Ltd 半導体集積回路装置
US8120114B2 (en) 2006-12-27 2012-02-21 Intel Corporation Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate
JP4553891B2 (ja) 2006-12-27 2010-09-29 シャープ株式会社 半導体層製造方法
GB2445188B (en) 2006-12-29 2009-07-01 Thermo Fisher Scientific Inc Apparatus and method for generating nitrogen oxides
JP2008172083A (ja) 2007-01-12 2008-07-24 Sharp Corp 気相成長装置および気相成長方法
US7860379B2 (en) 2007-01-15 2010-12-28 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
DE102007003416A1 (de) 2007-01-16 2008-07-17 Hansgrohe Ag Duschvorrichtung
JP5108489B2 (ja) 2007-01-16 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
DE102007002962B3 (de) 2007-01-19 2008-07-31 Qimonda Ag Verfahren zum Herstellen einer dielektrischen Schicht und zum Herstellen eines Kondensators
KR20090106617A (ko) 2007-01-19 2009-10-09 어플라이드 머티어리얼스, 인코포레이티드 플라스마 함침 챔버
JP4299863B2 (ja) 2007-01-22 2009-07-22 エルピーダメモリ株式会社 半導体装置の製造方法
JP5109376B2 (ja) 2007-01-22 2012-12-26 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
WO2008143716A2 (en) 2007-01-22 2008-11-27 Innovalight, Inc. In situ modification of group iv nanoparticles using gas phase nanoparticle reactors
US7550090B2 (en) 2007-01-23 2009-06-23 Applied Materials, Inc. Oxygen plasma clean to remove carbon species deposited on a glass dome surface
US20080173239A1 (en) 2007-01-24 2008-07-24 Yuri Makarov Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
US7833353B2 (en) 2007-01-24 2010-11-16 Asm Japan K.K. Liquid material vaporization apparatus for semiconductor processing apparatus
US7598170B2 (en) 2007-01-26 2009-10-06 Asm America, Inc. Plasma-enhanced ALD of tantalum nitride films
US20080182403A1 (en) 2007-01-26 2008-07-31 Atif Noori Uv curing of pecvd-deposited sacrificial polymer films for air-gap ild
US20080179715A1 (en) 2007-01-30 2008-07-31 Micron Technology, Inc. Shallow trench isolation using atomic layer deposition during fabrication of a semiconductor device
JP4270284B2 (ja) 2007-01-30 2009-05-27 トヨタ自動車株式会社 車輪状態監視システムおよび車輪状態検出装置
DE102007004867B4 (de) 2007-01-31 2009-07-30 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid
JP2008192643A (ja) 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
JP4896899B2 (ja) 2007-01-31 2012-03-14 東京エレクトロン株式会社 基板処理装置およびパーティクル付着防止方法
US8043432B2 (en) 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods
US7851360B2 (en) 2007-02-14 2010-12-14 Intel Corporation Organometallic precursors for seed/barrier processes and methods thereof
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
USD576001S1 (en) 2007-02-16 2008-09-02 Brenda Brunderman Faux brick tool
JP4805862B2 (ja) 2007-02-21 2011-11-02 富士通セミコンダクター株式会社 基板処理装置、基板処理方法、及び半導体装置の製造方法
JP2008202107A (ja) 2007-02-21 2008-09-04 Hitachi Kokusai Electric Inc 基板処理装置
US7871198B2 (en) 2007-02-26 2011-01-18 Battelle Energy Alliance, Llc High-temperature thermocouples and related methods
US20080207007A1 (en) 2007-02-27 2008-08-28 Air Products And Chemicals, Inc. Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films
DE102007009914B4 (de) 2007-02-28 2010-04-22 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement in Form eines Feldeffekttransistors mit einem Zwischenschichtdielektrikumsmaterial mit erhöhter innerer Verspannung und Verfahren zur Herstellung desselben
US20080216077A1 (en) 2007-03-02 2008-09-04 Applied Materials, Inc. Software sequencer for integrated substrate processing system
US8012259B2 (en) 2007-03-09 2011-09-06 Hitachi Kokusai Electric, Inc. Substrate processing apparatus
US20080220619A1 (en) 2007-03-09 2008-09-11 Asm Japan K.K. Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiation
US20080223130A1 (en) 2007-03-13 2008-09-18 Provina Incorporated Method and device for measuring density of a liquid
US7621672B2 (en) 2007-03-19 2009-11-24 Babcock & Wilcox Technical Services Y-12, Llc Thermocouple shield
US7833913B2 (en) 2007-03-20 2010-11-16 Tokyo Electron Limited Method of forming crystallographically stabilized doped hafnium zirconium based films
US8906249B2 (en) 2007-03-22 2014-12-09 Panasonic Corporation Plasma processing apparatus and plasma processing method
US7763869B2 (en) 2007-03-23 2010-07-27 Asm Japan K.K. UV light irradiating apparatus with liquid filter
US7435987B1 (en) 2007-03-27 2008-10-14 Intel Corporation Forming a type I heterostructure in a group IV semiconductor
US20080242097A1 (en) 2007-03-28 2008-10-02 Tim Boescke Selective deposition method
US7588749B2 (en) 2007-03-29 2009-09-15 Minimus Spine, Inc. Apparatus, method and system for delivering oxygen-ozone
US20080241387A1 (en) 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
US7651961B2 (en) 2007-03-30 2010-01-26 Tokyo Electron Limited Method for forming strained silicon nitride films and a device containing such films
ITMI20070671A1 (it) 2007-04-02 2008-10-03 St Microelectronics Srl Architettura circuitale su base organica e relativo metodo fi realizzazione
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
US20080241384A1 (en) 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
US8242028B1 (en) 2007-04-03 2012-08-14 Novellus Systems, Inc. UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement
KR100829759B1 (ko) 2007-04-04 2008-05-15 삼성에스디아이 주식회사 카바이드 유도 탄소를 이용한 카본나노튜브 혼성체, 이를포함하는 전자 방출원 및 상기 전자 방출원을 구비한 전자방출 소자
WO2008127935A1 (en) 2007-04-13 2008-10-23 The Board Of Trustees Of The University Of Illinois Metal complex compositions and methods for making metal-containing films
JP4839405B2 (ja) 2007-04-16 2011-12-21 株式会社アルバック コンベアおよび成膜装置とそのメンテナンス方法
JP5179476B2 (ja) 2007-04-17 2013-04-10 株式会社アルバック 成膜装置
US8357214B2 (en) 2007-04-26 2013-01-22 Trulite, Inc. Apparatus, system, and method for generating a gas from solid reactant pouches
JP4853374B2 (ja) 2007-04-27 2012-01-11 東京エレクトロン株式会社 塗布、現像装置及びその方法並びに記憶媒体
US7575968B2 (en) 2007-04-30 2009-08-18 Freescale Semiconductor, Inc. Inverse slope isolation and dual surface orientation integration
US7713874B2 (en) 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
KR100894098B1 (ko) 2007-05-03 2009-04-20 주식회사 하이닉스반도체 빠른 소거속도 및 향상된 리텐션 특성을 갖는 불휘발성메모리소자 및 그 제조방법
US8110099B2 (en) 2007-05-09 2012-02-07 Contech Stormwater Solutions Inc. Stormwater filter assembly
US7750429B2 (en) 2007-05-15 2010-07-06 International Business Machines Corporation Self-aligned and extended inter-well isolation structure
JP5103056B2 (ja) 2007-05-15 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
GB0709723D0 (en) 2007-05-22 2007-06-27 Goodrich Control Sys Ltd Temperature sensing
US7874726B2 (en) 2007-05-24 2011-01-25 Asm America, Inc. Thermocouple
US20080299326A1 (en) 2007-05-30 2008-12-04 Asm Japan K.K. Plasma cvd apparatus having non-metal susceptor
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
WO2008150484A1 (en) 2007-05-31 2008-12-11 Applied Materials, Inc. Methods and apparatus for extending the reach of a dual scara robot linkage
US20090017631A1 (en) 2007-06-01 2009-01-15 Bencher Christopher D Self-aligned pillar patterning using multiple spacer masks
US7807578B2 (en) 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
US8084352B2 (en) 2007-06-04 2011-12-27 Panasonic Corporation Method of manufacturing semiconductor device
US7781352B2 (en) 2007-06-06 2010-08-24 Asm Japan K.K. Method for forming inorganic silazane-based dielectric film
US20080305014A1 (en) 2007-06-07 2008-12-11 Hitachi Kokusai Electric Inc. Substrate processing apparatus
US20080302303A1 (en) 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US8142606B2 (en) 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
US7955650B2 (en) 2007-06-07 2011-06-07 Asm Japan K.K. Method for forming dielectric film using porogen gas
KR101073858B1 (ko) 2007-06-08 2011-10-14 도쿄엘렉트론가부시키가이샤 패터닝 방법
KR101011490B1 (ko) 2007-06-08 2011-01-31 도쿄엘렉트론가부시키가이샤 패터닝 방법
JP4427562B2 (ja) 2007-06-11 2010-03-10 株式会社東芝 パターン形成方法
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
USD575713S1 (en) 2007-06-21 2008-08-26 Ratcliffe Peter W Vehicle accessory
CN100590804C (zh) 2007-06-22 2010-02-17 中芯国际集成电路制造(上海)有限公司 原子层沉积方法以及形成的半导体器件
KR20100038211A (ko) 2007-06-28 2010-04-13 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 이산화규소 간극 충전용 전구체
US20090000550A1 (en) 2007-06-29 2009-01-01 Applied Materials, Inc. Manifold assembly
US20090033907A1 (en) 2007-07-05 2009-02-05 Nikon Corporation Devices and methods for decreasing residual chucking forces
JP2009016672A (ja) 2007-07-06 2009-01-22 Tokyo Electron Ltd 半導体装置の製造方法、半導体装置、半導体製造装置及び記憶媒体。
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
US7501292B2 (en) 2007-07-19 2009-03-10 Asm Japan K.K. Method for managing UV irradiation for curing semiconductor substrate
US7651269B2 (en) 2007-07-19 2010-01-26 Lam Research Corporation Temperature probes having a thermally isolated tip
JP4900110B2 (ja) 2007-07-20 2012-03-21 東京エレクトロン株式会社 薬液気化タンク及び薬液処理システム
US7720560B2 (en) 2007-07-26 2010-05-18 International Business Machines Corporation Semiconductor manufacturing process monitoring
US8008166B2 (en) 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
JP5058084B2 (ja) 2007-07-27 2012-10-24 株式会社半導体エネルギー研究所 光電変換装置の作製方法及びマイクロ波プラズマｃｖｄ装置
US8004045B2 (en) 2007-07-27 2011-08-23 Panasonic Corporation Semiconductor device and method for producing the same
JP5024382B2 (ja) 2007-08-03 2012-09-12 信越半導体株式会社 サセプタ及びシリコンエピタキシャルウェーハの製造方法
JP2009044023A (ja) 2007-08-10 2009-02-26 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
US20090041952A1 (en) 2007-08-10 2009-02-12 Asm Genitech Korea Ltd. Method of depositing silicon oxide films
WO2009023169A1 (en) 2007-08-10 2009-02-19 Nano Terra Inc. Structured smudge-resistant coatings and methods of making and using the same
TWI405295B (zh) 2007-08-13 2013-08-11 Advanced Display Proc Eng Co 基板處理裝置及方法
US20090052498A1 (en) 2007-08-24 2009-02-26 Asm America, Inc. Thermocouple
US8084372B2 (en) 2007-08-24 2011-12-27 Tokyo Electron Limited Substrate processing method and computer storage medium
US7745352B2 (en) 2007-08-27 2010-06-29 Applied Materials, Inc. Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process
JP2009076881A (ja) 2007-08-30 2009-04-09 Tokyo Electron Ltd 処理ガス供給システム及び処理装置
WO2009028619A1 (ja) 2007-08-30 2009-03-05 Tokyo Electron Limited 処理ガス供給システム及び処理装置
US8962101B2 (en) 2007-08-31 2015-02-24 Novellus Systems, Inc. Methods and apparatus for plasma-based deposition
JP2009060035A (ja) 2007-09-03 2009-03-19 Shinko Electric Ind Co Ltd 静電チャック部材、その製造方法及び静電チャック装置
US7832354B2 (en) 2007-09-05 2010-11-16 Applied Materials, Inc. Cathode liner with wafer edge gas injection in a plasma reactor chamber
US7879250B2 (en) 2007-09-05 2011-02-01 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
US8334015B2 (en) 2007-09-05 2012-12-18 Intermolecular, Inc. Vapor based combinatorial processing
WO2009031886A2 (en) 2007-09-07 2009-03-12 Fujifilm Manufacturing Europe B.V. Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
CA122619S (en) 2007-10-09 2010-01-27 Silvano Breda Shower strainer
JP5347294B2 (ja) 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US20090075491A1 (en) 2007-09-13 2009-03-19 Tokyo Electron Limited Method for curing a dielectric film
TWI489547B (zh) 2007-09-18 2015-06-21 Air Liquide 形成含矽膜的方法
JP4986784B2 (ja) 2007-09-18 2012-07-25 東京エレクトロン株式会社 処理システムの制御装置、処理システムの制御方法および制御プログラムを記憶した記憶媒体
US20090084317A1 (en) 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
US7824743B2 (en) 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
JP5236983B2 (ja) 2007-09-28 2013-07-17 東京エレクトロン株式会社 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びプログラム記憶媒体
US20090085156A1 (en) 2007-09-28 2009-04-02 Gilbert Dewey Metal surface treatments for uniformly growing dielectric layers
JP2009088421A (ja) 2007-10-03 2009-04-23 Renesas Technology Corp 半導体装置の製造方法
US8041450B2 (en) 2007-10-04 2011-10-18 Asm Japan K.K. Position sensor system for substrate transfer robot
US20090090382A1 (en) 2007-10-05 2009-04-09 Asm Japan K.K. Method of self-cleaning of carbon-based film
US7776698B2 (en) 2007-10-05 2010-08-17 Applied Materials, Inc. Selective formation of silicon carbon epitaxial layer
JP2011500961A (ja) * 2007-10-11 2011-01-06 バレンス プロセス イクウィップメント，インコーポレイテッド 化学気相成長反応器
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US8070880B2 (en) 2007-10-22 2011-12-06 Hitachi Kokusai Electric, Inc. Substrate processing apparatus
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US7803722B2 (en) 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
US7541297B2 (en) 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7615831B2 (en) 2007-10-26 2009-11-10 International Business Machines Corporation Structure and method for fabricating self-aligned metal contacts
JP4730369B2 (ja) 2007-10-30 2011-07-20 株式会社デンソー ナビゲーションシステム
WO2009067858A1 (en) 2007-10-31 2009-06-04 China Petroleum & Chemical Corporation A predeactivation method and a deactivation method during initial reaction for a continuous reforming apparatus
KR101369907B1 (ko) 2007-10-31 2014-03-04 주성엔지니어링(주) 트랜지스터 및 그 제조 방법
US7737039B2 (en) 2007-11-01 2010-06-15 Micron Technology, Inc. Spacer process for on pitch contacts and related structures
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
US20090124131A1 (en) 2007-11-09 2009-05-14 Electronic Controls Design Thermocouple adapter
US20090122458A1 (en) 2007-11-14 2009-05-14 Varian Semiconductor Epuipment Associated, Inc. Embossed electrostatic chuck
US8272516B2 (en) 2007-11-19 2012-09-25 Caterpillar Inc. Fluid filter system
CA123273S (en) 2007-11-19 2010-01-27 Silvano Breda Shower strainer
CA123272S (en) 2007-11-19 2010-01-27 Silvano Breda Shower strainer
KR101412144B1 (ko) 2007-11-26 2014-06-26 삼성전자 주식회사 금속 배선의 제조 방법 및 이를 이용한 이미지 센서의 제조방법
US8021723B2 (en) 2007-11-27 2011-09-20 Asm Japan K.K. Method of plasma treatment using amplitude-modulated RF power
EP2065927B1 (en) 2007-11-27 2013-10-02 Imec Integration and manufacturing method of Cu germanide and Cu silicide as Cu capping layer
JP5314700B2 (ja) 2007-11-28 2013-10-16 コーニンクレッカ フィリップス エヌ ヴェ 誘電バリア放電ランプ
KR20090055443A (ko) 2007-11-28 2009-06-02 주식회사 케이씨텍 원자층 증착 장치
US8060252B2 (en) 2007-11-30 2011-11-15 Novellus Systems, Inc. High throughput method of in transit wafer position correction in system using multiple robots
JP5464843B2 (ja) 2007-12-03 2014-04-09 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
US7651959B2 (en) 2007-12-03 2010-01-26 Asm Japan K.K. Method for forming silazane-based dielectric film
US20090139657A1 (en) 2007-12-04 2009-06-04 Applied Materials, Inc. Etch system
JP5158093B2 (ja) 2007-12-06 2013-03-06 信越半導体株式会社 気相成長用サセプタおよび気相成長装置
US7807566B2 (en) 2007-12-07 2010-10-05 Asm Japan K.K. Method for forming dielectric SiOCH film having chemical stability
US8440569B2 (en) 2007-12-07 2013-05-14 Cadence Design Systems, Inc. Method of eliminating a lithography operation
US8628616B2 (en) 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
KR100956247B1 (ko) 2007-12-13 2010-05-06 삼성엘이디 주식회사 금속유기 화학기상 증착장치
US8003174B2 (en) 2007-12-13 2011-08-23 Asm Japan K.K. Method for forming dielectric film using siloxane-silazane mixture
JP5307029B2 (ja) 2007-12-17 2013-10-02 株式会社オーク製作所 放電ランプ
US8092606B2 (en) 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
US20090159002A1 (en) 2007-12-19 2009-06-25 Kallol Bera Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution
US8137463B2 (en) 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
KR101542636B1 (ko) 2007-12-19 2015-08-06 램 리써치 코포레이션 나노다공성 로우-k 유전체 재료 처리 방법
US7993057B2 (en) 2007-12-20 2011-08-09 Asm America, Inc. Redundant temperature sensor for semiconductor processing chambers
US7678715B2 (en) 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
US7989329B2 (en) 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
CN101903977A (zh) 2007-12-21 2010-12-01 朗姆研究公司 光刻胶两次图案化
JP3140111U (ja) 2007-12-21 2008-03-13 日本エー・エス・エム株式会社 半導体製造装置用ガス供給装置
KR20090068179A (ko) 2007-12-21 2009-06-25 에이에스엠 인터내셔널 엔.브이. 실리콘 이산화물을 포함하는 박막의 제조 방법
US20090197015A1 (en) 2007-12-25 2009-08-06 Applied Materials, Inc. Method and apparatus for controlling plasma uniformity
KR101444873B1 (ko) 2007-12-26 2014-09-26 주성엔지니어링(주) 기판처리장치
JP5291928B2 (ja) 2007-12-26 2013-09-18 株式会社日立製作所 酸化物半導体装置およびその製造方法
US8333839B2 (en) 2007-12-27 2012-12-18 Synos Technology, Inc. Vapor deposition reactor
US20090165721A1 (en) 2007-12-27 2009-07-02 Memc Electronic Materials, Inc. Susceptor with Support Bosses
US8496377B2 (en) 2007-12-31 2013-07-30 Covidien Lp Thermometer having molded probe component
KR101013413B1 (ko) 2008-01-07 2011-02-14 한국과학기술연구원 플라즈마 표면 처리를 이용한 투명 기체 차단 필름의 제조방법 및 이로부터 제조된 투명 기체 차단 필름
US7935940B1 (en) 2008-01-08 2011-05-03 Novellus Systems, Inc. Measuring in-situ UV intensity in UV cure tool
US8129288B2 (en) 2008-05-02 2012-03-06 Intermolecular, Inc. Combinatorial plasma enhanced deposition techniques
US8198567B2 (en) 2008-01-15 2012-06-12 Applied Materials, Inc. High temperature vacuum chuck assembly
US20110049100A1 (en) 2008-01-16 2011-03-03 Charm Engineering Co., Ltd. Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same
US20090186571A1 (en) 2008-01-22 2009-07-23 Asm America, Inc. Air ventilation system
CN101911253B (zh) 2008-01-31 2012-08-22 应用材料公司 闭环mocvd沉积控制
KR20100109567A (ko) 2008-02-01 2010-10-08 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 베타-디케티미나토 리간드를 함유하는 새로운 금속 전구체
US20090203197A1 (en) 2008-02-08 2009-08-13 Hiroji Hanawa Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition
US20090200494A1 (en) 2008-02-11 2009-08-13 Varian Semiconductor Equipment Associates, Inc. Techniques for cold implantation of carbon-containing species
KR100988390B1 (ko) 2008-02-11 2010-10-18 성균관대학교산학협력단 기판처리장치 및 기판처리방법
KR101043211B1 (ko) 2008-02-12 2011-06-22 신웅철 배치형 원자층 증착 장치
GB0802486D0 (en) 2008-02-12 2008-03-19 Gilbert Patrick C Warm water economy device
US20090206056A1 (en) 2008-02-14 2009-08-20 Songlin Xu Method and Apparatus for Plasma Process Performance Matching in Multiple Wafer Chambers
JP2009194248A (ja) 2008-02-15 2009-08-27 Tokyo Electron Ltd パターン形成方法、半導体製造装置及び記憶媒体
KR101204614B1 (ko) 2008-02-20 2012-11-23 도쿄엘렉트론가부시키가이샤 가스 공급 장치, 성막 장치, 및 성막 방법
US20090214777A1 (en) 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems
JP5454467B2 (ja) 2008-02-27 2014-03-26 東京エレクトロン株式会社 プラズマエッチング処理装置およびプラズマエッチング処理方法
KR100968132B1 (ko) 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
US7727866B2 (en) 2008-03-05 2010-06-01 Varian Semiconductor Equipment Associates, Inc. Use of chained implants in solar cells
US7858533B2 (en) 2008-03-06 2010-12-28 Tokyo Electron Limited Method for curing a porous low dielectric constant dielectric film
USD585968S1 (en) 2008-03-06 2009-02-03 West Coast Washers, Inc. Pipe flashing
US7977256B2 (en) 2008-03-06 2011-07-12 Tokyo Electron Limited Method for removing a pore-generating material from an uncured low-k dielectric film
EP2099067A1 (en) 2008-03-07 2009-09-09 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Process for adjusting the friction coefficient between surfaces of two solid objects
JP5507097B2 (ja) 2008-03-12 2014-05-28 富士フイルム株式会社 ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置
GB2458507A (en) 2008-03-20 2009-09-23 Tecvac Ltd Oxidation of non ferrous metal components
US7695619B2 (en) 2008-03-21 2010-04-13 Pentair Filtration, Inc. Modular drinking water filtration system with adapter rings for replaceable cartridges to assure proper fit
GB0805328D0 (en) 2008-03-25 2008-04-30 Aviza Technologies Ltd Deposition of an amorphous layer
JP2009239082A (ja) 2008-03-27 2009-10-15 Tokyo Electron Ltd ガス供給装置、処理装置及び処理方法
US20090246399A1 (en) 2008-03-28 2009-10-01 Asm Japan K.K. Method for activating reactive oxygen species for cleaning carbon-based film deposition
US7816278B2 (en) 2008-03-28 2010-10-19 Tokyo Electron Limited In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
US8252114B2 (en) 2008-03-28 2012-08-28 Tokyo Electron Limited Gas distribution system and method for distributing process gas in a processing system
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
USD590933S1 (en) 2008-03-31 2009-04-21 Mcp Industries, Inc. Vent cap device
US7963736B2 (en) 2008-04-03 2011-06-21 Asm Japan K.K. Wafer processing apparatus with wafer alignment device
JP5007827B2 (ja) 2008-04-04 2012-08-22 信越化学工業株式会社 ダブルパターン形成方法
US20110027725A1 (en) 2008-04-04 2011-02-03 Kiyoharu Tsutsumi Polyol compound for photoresist
US20090250955A1 (en) 2008-04-07 2009-10-08 Applied Materials, Inc. Wafer transfer blade
JP5551681B2 (ja) 2008-04-16 2014-07-16 エーエスエム アメリカ インコーポレイテッド アルミニウム炭化水素化合物を使用する金属炭化物膜の原子層堆積
CN102007597B (zh) 2008-04-17 2014-02-19 应用材料公司 低温薄膜晶体管工艺、装置特性和装置稳定性改进
US8741062B2 (en) 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
WO2009131902A2 (en) 2008-04-23 2009-10-29 Intermolecular, Inc. Yttrium and titanium high-k dielectric films
US20090269506A1 (en) 2008-04-24 2009-10-29 Seiji Okura Method and apparatus for cleaning of a CVD reactor
KR101596698B1 (ko) 2008-04-25 2016-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
US8383525B2 (en) 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
EP2272068B1 (en) 2008-04-28 2018-07-04 Basf Se Low-k dielectrics obtainable by twin polymerization
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US7632549B2 (en) 2008-05-05 2009-12-15 Asm Japan K.K. Method of forming a high transparent carbon film
US20090280248A1 (en) 2008-05-06 2009-11-12 Asm America, Inc. Porous substrate holder with thinned portions
US8076237B2 (en) 2008-05-09 2011-12-13 Asm America, Inc. Method and apparatus for 3D interconnect
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
US20090286402A1 (en) 2008-05-13 2009-11-19 Applied Materials, Inc Method for critical dimension shrink using conformal pecvd films
US8264154B2 (en) 2008-05-14 2012-09-11 Applied Materials, Inc. Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for RF power delivery
US8333842B2 (en) 2008-05-15 2012-12-18 Applied Materials, Inc. Apparatus for etching semiconductor wafers
EP2128299B1 (en) 2008-05-29 2016-12-28 General Electric Technology GmbH Multilayer thermal barrier coating
US7622369B1 (en) 2008-05-30 2009-11-24 Asm Japan K.K. Device isolation technology on semiconductor substrate
US8298628B2 (en) 2008-06-02 2012-10-30 Air Products And Chemicals, Inc. Low temperature deposition of silicon-containing films
US8283201B2 (en) 2008-06-05 2012-10-09 American Air Liquide, Inc. Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films
WO2009146744A1 (de) 2008-06-05 2009-12-10 Osram Gesellschaft mit beschränkter Haftung Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler
JP2009295932A (ja) 2008-06-09 2009-12-17 Canon Inc 露光装置及びデバイス製造方法
US7915667B2 (en) 2008-06-11 2011-03-29 Qimonda Ag Integrated circuits having a contact region and methods for manufacturing the same
US20090308315A1 (en) 2008-06-13 2009-12-17 Asm International N.V. Semiconductor processing apparatus with improved thermal characteristics and method for providing the same
US7946762B2 (en) 2008-06-17 2011-05-24 Asm America, Inc. Thermocouple
CN102047388A (zh) 2008-06-20 2011-05-04 应用材料股份有限公司 气体分布喷头裙部
US8726837B2 (en) 2008-06-23 2014-05-20 Applied Materials, Inc. Semiconductor process chamber vision and monitoring system
KR101036605B1 (ko) 2008-06-30 2011-05-24 세메스 주식회사 기판 지지 유닛 및 이를 이용한 매엽식 기판 연마 장치
US20090325391A1 (en) 2008-06-30 2009-12-31 Asm International Nv Ozone and teos process for silicon oxide deposition
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8702867B2 (en) 2008-07-08 2014-04-22 Jusung Engineering Co., Ltd. Gas distribution plate and substrate treating apparatus including the same
JP2010021204A (ja) 2008-07-08 2010-01-28 Toshiba Corp 半導体装置及びその製造方法
TWI454221B (en) * 2008-07-14 2014-10-01 Composition and method for inhibiting formation of body fat
US8058138B2 (en) 2008-07-17 2011-11-15 Micron Technology, Inc. Gap processing
US9997325B2 (en) 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
USD614593S1 (en) 2008-07-21 2010-04-27 Asm Genitech Korea Ltd Substrate support for a semiconductor deposition apparatus
TWD136587S1 (zh) 2008-07-22 2010-08-21 東京威力科創股份有限公司 晶圓吸附板
US20100025796A1 (en) 2008-08-04 2010-02-04 Amir Massoud Dabiran Microchannel plate photocathode
KR20100015213A (ko) 2008-08-04 2010-02-12 삼성전기주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
US20100034719A1 (en) 2008-08-06 2010-02-11 Christian Dussarrat Novel lanthanide beta-diketonate precursors for lanthanide thin film deposition
USD600223S1 (en) 2008-08-07 2009-09-15 Ravinder Aggarwal Susceptor ring
US8328585B2 (en) 2008-08-07 2012-12-11 Texas Instruments Incorporated Modulated deposition process for stress control in thick TiN films
US20110220874A1 (en) 2008-08-08 2011-09-15 Tobias Hanrath Inorganic Bulk Multijunction Materials and Processes for Preparing the Same
US8129555B2 (en) 2008-08-12 2012-03-06 Air Products And Chemicals, Inc. Precursors for depositing silicon-containing films and methods for making and using same
JP5338335B2 (ja) 2008-08-13 2013-11-13 東京エレクトロン株式会社 搬送容器の開閉装置及びプローブ装置
KR101017170B1 (ko) 2008-08-13 2011-02-25 주식회사 동부하이텍 백 메탈 공정챔버
US8263502B2 (en) 2008-08-13 2012-09-11 Synos Technology, Inc. Forming substrate structure by filling recesses with deposition material
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
JP5593472B2 (ja) 2008-08-27 2014-09-24 株式会社日立国際電気 基板処理装置および半導体デバイスの製造方法
JP5188326B2 (ja) 2008-08-28 2013-04-24 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、及び基板処理装置
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US20100055442A1 (en) 2008-09-03 2010-03-04 International Business Machines Corporation METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES
JP5107185B2 (ja) 2008-09-04 2012-12-26 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
TW201011861A (en) 2008-09-04 2010-03-16 Nanya Technology Corp Method for fabricating integrated circuit
JP2010087467A (ja) 2008-09-04 2010-04-15 Tokyo Electron Ltd 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
JP5276388B2 (ja) 2008-09-04 2013-08-28 東京エレクトロン株式会社 成膜装置及び基板処理装置
KR101533138B1 (ko) 2008-09-08 2015-07-01 시바우라 메카트로닉스 가부시끼가이샤 기판 처리 장치 및 기판 처리 방법
JP5226438B2 (ja) 2008-09-10 2013-07-03 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
USD643055S1 (en) 2008-09-11 2011-08-09 Asm Japan K.K. Heater block for use in a semiconductor processing tool
US8731706B2 (en) 2008-09-12 2014-05-20 Hitachi High-Technologies Corporation Vacuum processing apparatus
US20100065758A1 (en) 2008-09-16 2010-03-18 Tokyo Electron Limited Dielectric material treatment system and method of operating
US9711373B2 (en) 2008-09-22 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a gate dielectric for high-k metal gate devices
US20100075037A1 (en) 2008-09-22 2010-03-25 Marsh Eugene P Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods
JP2010077508A (ja) 2008-09-26 2010-04-08 Tokyo Electron Ltd 成膜装置及び基板処理装置
DE102008049353A1 (de) 2008-09-29 2010-04-08 Vat Holding Ag Vakuumventil
JP4638550B2 (ja) 2008-09-29 2011-02-23 東京エレクトロン株式会社 マスクパターンの形成方法、微細パターンの形成方法及び成膜装置
US9493875B2 (en) 2008-09-30 2016-11-15 Eugene Technology Co., Ltd. Shower head unit and chemical vapor deposition apparatus
US20100090149A1 (en) * 2008-10-01 2010-04-15 Compressor Engineering Corp. Poppet valve assembly, system, and apparatus for use in high speed compressor applications
US20100081293A1 (en) 2008-10-01 2010-04-01 Applied Materials, Inc. Methods for forming silicon nitride based film or silicon carbon based film
TWD135511S1 (zh) 2008-10-03 2010-06-21 日本碍子股份有限公司 靜電夾頭
US20100086703A1 (en) 2008-10-03 2010-04-08 Veeco Compound Semiconductor, Inc. Vapor Phase Epitaxy System
CN102177571A (zh) 2008-10-07 2011-09-07 应用材料公司 用于从蚀刻基板有效地移除卤素残余物的设备
KR101627297B1 (ko) 2008-10-13 2016-06-03 한국에이에스엠지니텍 주식회사 플라즈마 처리부 및 이를 포함하는 증착 장치 및 증착 방법
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
US8105465B2 (en) 2008-10-14 2012-01-31 Applied Materials, Inc. Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD)
WO2010044978A1 (en) 2008-10-15 2010-04-22 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University Hybrid group iv/iii-v semiconductor structures
US7745346B2 (en) 2008-10-17 2010-06-29 Novellus Systems, Inc. Method for improving process control and film conformality of PECVD film
JP2010097834A (ja) 2008-10-17 2010-04-30 Ushio Inc バックライトユニット
US8697189B2 (en) 2008-10-21 2014-04-15 Intevac, Inc. Method and apparatus for precision surface modification in nano-imprint lithography
US8114734B2 (en) 2008-10-21 2012-02-14 United Microelectronics Corp. Metal capacitor and method of making the same
US7967913B2 (en) 2008-10-22 2011-06-28 Applied Materials, Inc. Remote plasma clean process with cycled high and low pressure clean steps
KR20110084275A (ko) 2008-10-27 2011-07-21 어플라이드 머티어리얼스, 인코포레이티드 삼원 화합물의 기상 증착 방법
US8185443B2 (en) 2008-10-27 2012-05-22 Ebay, Inc. Method and apparatus for authorizing a payment via a remote device
JP5410074B2 (ja) 2008-11-07 2014-02-05 東京エレクトロン株式会社 オゾンガス濃度測定方法、オゾンガス濃度測定システム及び基板処理装置
CN102203910B (zh) 2008-11-07 2014-12-10 Asm美国公司 反应室
JP5062143B2 (ja) 2008-11-10 2012-10-31 東京エレクトロン株式会社 成膜装置
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US8647722B2 (en) 2008-11-14 2014-02-11 Asm Japan K.K. Method of forming insulation film using plasma treatment cycles
JP2010153769A (ja) 2008-11-19 2010-07-08 Tokyo Electron Ltd 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
US20100130017A1 (en) 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
JP5225041B2 (ja) 2008-11-21 2013-07-03 京セラ株式会社 静電チャック
KR101004434B1 (ko) 2008-11-26 2010-12-28 세메스 주식회사 기판 지지 유닛과, 이를 이용한 기판 연마 장치 및 방법
US8714169B2 (en) 2008-11-26 2014-05-06 Semes Co. Ltd. Spin head, apparatus for treating substrate, and method for treating substrate
WO2010065473A2 (en) 2008-12-01 2010-06-10 Applied Materials, Inc. Gas distribution blocker apparatus
US8138676B2 (en) 2008-12-01 2012-03-20 Mills Robert L Methods and systems for dimmable fluorescent lighting using multiple frequencies
EP2194574B1 (en) 2008-12-02 2018-11-07 IMEC vzw Method for producing interconnect structures for integrated circuits
US8262287B2 (en) 2008-12-08 2012-09-11 Asm America, Inc. Thermocouple
US8765233B2 (en) 2008-12-09 2014-07-01 Asm Japan K.K. Method for forming low-carbon CVD film for filling trenches
JP5390846B2 (ja) 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
JP5356005B2 (ja) 2008-12-10 2013-12-04 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US20100151206A1 (en) 2008-12-11 2010-06-17 Air Products And Chemicals, Inc. Method for Removal of Carbon From An Organosilicate Material
US8033771B1 (en) 2008-12-11 2011-10-11 Novellus Systems, Inc. Minimum contact area wafer clamping with gas flow for rapid wafer cooling
CN102246268A (zh) 2008-12-15 2011-11-16 东京毅力科创株式会社 基板处理系统、基板处理方法以及存储了程序的存储介质
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
WO2010075467A1 (en) 2008-12-23 2010-07-01 Mks Instruments, Inc. Reactive chemical containment system
KR20100075070A (ko) 2008-12-24 2010-07-02 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법
US8816424B2 (en) 2008-12-26 2014-08-26 SK Hynix Inc. Nonvolatile memory device
JP2010157536A (ja) 2008-12-26 2010-07-15 Nuflare Technology Inc サセプタの製造方法
TWI465599B (zh) 2008-12-29 2014-12-21 K C Tech Co Ltd 原子層沉積裝置
US7964490B2 (en) 2008-12-31 2011-06-21 Intel Corporation Methods of forming nickel sulfide film on a semiconductor device
US20100183825A1 (en) 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
KR101111063B1 (ko) 2008-12-31 2012-02-16 엘아이지에이디피 주식회사 기판합착장치
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US8216380B2 (en) 2009-01-08 2012-07-10 Asm America, Inc. Gap maintenance for opening to process chamber
US20100176513A1 (en) 2009-01-09 2010-07-15 International Business Machines Corporation Structure and method of forming metal interconnect structures in ultra low-k dielectrics
WO2010081003A2 (en) 2009-01-11 2010-07-15 Applied Materials, Inc. Systems, apparatus and methods for moving substrates
US8151814B2 (en) 2009-01-13 2012-04-10 Asm Japan K.K. Method for controlling flow and concentration of liquid precursor
USD606952S1 (en) 2009-01-16 2009-12-29 Asm Genitech Korea Ltd. Plasma inducing plate for semiconductor deposition apparatus
US8591659B1 (en) 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
US7919416B2 (en) 2009-01-21 2011-04-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US8142862B2 (en) 2009-01-21 2012-03-27 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US7972980B2 (en) 2009-01-21 2011-07-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US8680650B2 (en) 2009-02-03 2014-03-25 Micron Technology, Inc. Capacitor structures having improved area efficiency
CN102308380B (zh) 2009-02-04 2014-06-04 马特森技术有限公司 用于径向调整衬底的表面上的温度轮廓的静电夹具系统及方法
US8307472B1 (en) 2009-02-04 2012-11-13 Thomas Jason Saxon Light emitting diode system
US8287648B2 (en) 2009-02-09 2012-10-16 Asm America, Inc. Method and apparatus for minimizing contamination in semiconductor processing chamber
US8663735B2 (en) 2009-02-13 2014-03-04 Advanced Technology Materials, Inc. In situ generation of RuO4 for ALD of Ru and Ru related materials
EP2397574A4 (en) 2009-02-16 2013-08-14 Mitsubishi Plastics Inc METHOD FOR PRODUCING A MULTILAYER GAS-REINFORCED FILM
US8586484B2 (en) 2009-03-04 2013-11-19 Fuji Electric Co., Ltd. Film forming method and film forming apparatus
JP2010205967A (ja) 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
KR101049801B1 (ko) 2009-03-05 2011-07-15 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치
USD616394S1 (en) 2009-03-06 2010-05-25 Tokyo Electron Limited Support of wafer boat for manufacturing semiconductor wafers
JP5221421B2 (ja) 2009-03-10 2013-06-26 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
JP2010239115A (ja) 2009-03-10 2010-10-21 Hitachi Kokusai Electric Inc 基板処理装置
US8703624B2 (en) 2009-03-13 2014-04-22 Air Products And Chemicals, Inc. Dielectric films comprising silicon and methods for making same
JP5275094B2 (ja) 2009-03-13 2013-08-28 東京エレクトロン株式会社 基板処理方法
EP2230703A3 (en) 2009-03-18 2012-05-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus and manufacturing method of lighting device
KR101583608B1 (ko) 2009-03-24 2016-01-08 삼성전자 주식회사 무기계 실리콘 전구체를 이용한 실리콘 산화막의 형성 방법및 이를 이용한 반도체 장치의 제조 방법
KR20110137775A (ko) 2009-03-26 2011-12-23 파나소닉 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
US9004744B1 (en) 2009-03-30 2015-04-14 Techni-Blend, Inc. Fluid mixer using countercurrent injection
US8118484B2 (en) 2009-03-31 2012-02-21 Rosemount Inc. Thermocouple temperature sensor with connection detection circuitry
JP5292160B2 (ja) 2009-03-31 2013-09-18 東京エレクトロン株式会社 ガス流路構造体及び基板処理装置
US8197915B2 (en) 2009-04-01 2012-06-12 Asm Japan K.K. Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature
US8284601B2 (en) 2009-04-01 2012-10-09 Samsung Electronics Co., Ltd. Semiconductor memory device comprising three-dimensional memory cell array
JP5647792B2 (ja) 2009-04-01 2015-01-07 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． キャパシタ用容量絶縁膜の製造方法
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
JP5338443B2 (ja) 2009-04-14 2013-11-13 信越半導体株式会社 Ｓｏｉウェーハの製造方法
US8404499B2 (en) 2009-04-20 2013-03-26 Applied Materials, Inc. LED substrate processing
US9431237B2 (en) 2009-04-20 2016-08-30 Applied Materials, Inc. Post treatment methods for oxide layers on semiconductor devices
SG174993A1 (en) 2009-04-21 2011-11-28 Applied Materials Inc Cvd apparatus for improved film thickness non-uniformity and particle performance
US20100266765A1 (en) 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
US8071452B2 (en) 2009-04-27 2011-12-06 Asm America, Inc. Atomic layer deposition of hafnium lanthanum oxides
JP5136574B2 (ja) 2009-05-01 2013-02-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US8382370B2 (en) 2009-05-06 2013-02-26 Asm America, Inc. Thermocouple assembly with guarded thermocouple junction
US9297705B2 (en) 2009-05-06 2016-03-29 Asm America, Inc. Smart temperature measuring device
US8100583B2 (en) 2009-05-06 2012-01-24 Asm America, Inc. Thermocouple
KR20100032812A (ko) 2009-05-11 2010-03-26 주식회사 테스 화학기상증착 장치와 이를 이용한 기판 처리 시스템
US7842622B1 (en) 2009-05-15 2010-11-30 Asm Japan K.K. Method of forming highly conformal amorphous carbon layer
CN102428544B (zh) 2009-05-20 2014-10-29 株式会社东芝 凹凸图案形成方法
US8004198B2 (en) 2009-05-28 2011-08-23 Osram Sylvania Inc. Resetting an electronic ballast in the event of fault
KR101064210B1 (ko) 2009-06-01 2011-09-14 한국생산기술연구원 막증착 진공장비용 샤워헤드
JP5456036B2 (ja) 2009-06-12 2014-03-26 株式会社東芝 不揮発性半導体記憶装置
US20100317198A1 (en) 2009-06-12 2010-12-16 Novellus Systems, Inc. Remote plasma processing of interface surfaces
USD652896S1 (en) 2009-06-17 2012-01-24 Neoperl Gmbh Faucet stream former
US7825040B1 (en) 2009-06-22 2010-11-02 Asm Japan K.K. Method for depositing flowable material using alkoxysilane or aminosilane precursor
JP5285519B2 (ja) 2009-07-01 2013-09-11 パナソニック株式会社 半導体装置及びその製造方法
KR101110080B1 (ko) 2009-07-08 2012-03-13 주식회사 유진테크 확산판을 선택적으로 삽입설치하는 기판처리방법
US20110006406A1 (en) 2009-07-08 2011-01-13 Imec Fabrication of porogen residues free and mechanically robust low-k materials
US8546276B2 (en) 2009-07-14 2013-10-01 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Deposition of group IV metal-containing films at high temperature
JP2011023718A (ja) 2009-07-15 2011-02-03 Asm Japan Kk ＰＥＡＬＤによってＳｉ−Ｎ結合を有するストレス調節された誘電体膜を形成する方法
US20120107607A1 (en) 2009-07-17 2012-05-03 Mitsui Chemicals, Inc. Multilayered material and method of producing the same
JP5223804B2 (ja) 2009-07-22 2013-06-26 東京エレクトロン株式会社 成膜方法及び成膜装置
KR101245769B1 (ko) 2009-07-28 2013-03-20 엘아이지에이디피 주식회사 화학기상증착장치, 화학기상증착장치용 가이드부재 및 화학기상증착장치를 이용한 박막제조방법
US8071451B2 (en) 2009-07-29 2011-12-06 Axcelis Technologies, Inc. Method of doping semiconductors
JP5618505B2 (ja) 2009-07-30 2014-11-05 テクノクオーツ株式会社 石英ガラス部材の再生方法
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
US8258588B2 (en) 2009-08-07 2012-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Sealing layer of a field effect transistor
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8883270B2 (en) 2009-08-14 2014-11-11 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
US8877655B2 (en) 2010-05-07 2014-11-04 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8563085B2 (en) 2009-08-18 2013-10-22 Samsung Electronics Co., Ltd. Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor
KR101031226B1 (ko) 2009-08-21 2011-04-29 에이피시스템 주식회사 급속열처리 장치의 히터블록
US9117773B2 (en) 2009-08-26 2015-08-25 Asm America, Inc. High concentration water pulses for atomic layer deposition
USD634719S1 (en) 2009-08-27 2011-03-22 Ebara Corporation Elastic membrane for semiconductor wafer polishing apparatus
CN102414801A (zh) 2009-08-27 2012-04-11 应用材料公司 在原位腔室清洁后的处理腔室去污方法
US9117769B2 (en) 2009-08-27 2015-08-25 Tokyo Electron Limited Plasma etching method
WO2011026064A1 (en) 2009-08-31 2011-03-03 The Penn State Research Foundation Improved plasma enhanced atomic layer deposition process
JP2011054708A (ja) 2009-09-01 2011-03-17 Elpida Memory Inc 絶縁膜およびその製造方法、半導体装置、ならびにデータ処理システム
JP5457109B2 (ja) 2009-09-02 2014-04-02 東京エレクトロン株式会社 プラズマ処理装置
US9012333B2 (en) 2009-09-09 2015-04-21 Spansion Llc Varied silicon richness silicon nitride formation
KR200478069Y1 (ko) 2009-09-10 2015-08-24 램 리써치 코포레이션 플라즈마 처리 장치의 교체가능한 상부 체임버 부품
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP2011082493A (ja) 2009-09-14 2011-04-21 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
SG169960A1 (en) 2009-09-18 2011-04-29 Lam Res Corp Clamped monolithic showerhead electrode
JP5504793B2 (ja) 2009-09-26 2014-05-28 東京エレクトロン株式会社 熱処理装置及び冷却方法
JPWO2011040385A1 (ja) 2009-09-29 2013-02-28 東京エレクトロン株式会社 Ｎｉ膜の成膜方法
JP5467007B2 (ja) 2009-09-30 2014-04-09 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
EP2306497B1 (en) 2009-10-02 2012-06-06 Imec Method for manufacturing a low defect interface between a dielectric and a III/V compound
TW201131651A (en) 2009-10-05 2011-09-16 Univ Tohoku Low dielectric constant insulating film
US8544317B2 (en) 2009-10-09 2013-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processing apparatus with simultaneously movable stages
US8415259B2 (en) 2009-10-14 2013-04-09 Asm Japan K.K. Method of depositing dielectric film by modified PEALD method
US8173554B2 (en) 2009-10-14 2012-05-08 Asm Japan K.K. Method of depositing dielectric film having Si-N bonds by modified peald method
US8465791B2 (en) 2009-10-16 2013-06-18 Msp Corporation Method for counting particles in a gas
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US20110097901A1 (en) 2009-10-26 2011-04-28 Applied Materials, Inc. Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
KR101829380B1 (ko) 2009-10-26 2018-02-19 에이에스엠 인터내셔널 엔.브이. ５ａ족 원소 함유 박막의 원자 층 증착용 전구체의 합성 및 용도
JP5451324B2 (ja) 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8854734B2 (en) 2009-11-12 2014-10-07 Vela Technologies, Inc. Integrating optical system and methods
US8528224B2 (en) 2009-11-12 2013-09-10 Novellus Systems, Inc. Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia
HUE032915T2 (hu) 2009-11-13 2017-11-28 Basf Se Eljárás egy klór-betáplálás tisztítására
JP4948587B2 (ja) 2009-11-13 2012-06-06 東京エレクトロン株式会社 フォトレジスト塗布現像装置、基板搬送方法、インターフェイス装置
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US8329585B2 (en) 2009-11-17 2012-12-11 Lam Research Corporation Method for reducing line width roughness with plasma pre-etch treatment on photoresist
JP5753351B2 (ja) 2009-11-19 2015-07-22 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 電子デバイスを形成する方法
KR20110055912A (ko) 2009-11-20 2011-05-26 주식회사 하이닉스반도체 반도체 소자의 콘택홀 형성방법
AU329418S (en) 2009-11-23 2010-01-29 Pusher tool
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US20110139748A1 (en) 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US8328494B2 (en) 2009-12-15 2012-12-11 Varian Semiconductor Equipment Associates, Inc. In vacuum optical wafer heater for cryogenic processing
US20110159202A1 (en) 2009-12-29 2011-06-30 Asm Japan K.K. Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD
KR20110078326A (ko) 2009-12-31 2011-07-07 삼성전자주식회사 유전막 형성 방법 및 이를 이용한 반도체 소자 제조 방법
USD653734S1 (en) 2010-01-08 2012-02-07 Bulk Tank, Inc. Screened gasket
JP2011166106A (ja) 2010-01-13 2011-08-25 Renesas Electronics Corp 半導体装置の製造方法及び半導体装置
JP2011144412A (ja) 2010-01-13 2011-07-28 Honda Motor Co Ltd プラズマ成膜装置
JP5549441B2 (ja) 2010-01-14 2014-07-16 東京エレクトロン株式会社 保持体機構、ロードロック装置、処理装置及び搬送機構
USD651291S1 (en) 2010-01-24 2011-12-27 Glv International (1995) Ltd. Duct connector ring
US20110183269A1 (en) 2010-01-25 2011-07-28 Hongbin Zhu Methods Of Forming Patterns, And Methods For Trimming Photoresist Features
US8480942B2 (en) 2010-01-27 2013-07-09 The Board Of Trustees Of The University Of Illinois Method of forming a patterned layer of a material on a substrate
US20110180233A1 (en) 2010-01-27 2011-07-28 Applied Materials, Inc. Apparatus for controlling temperature uniformity of a showerhead
JP5107372B2 (ja) 2010-02-04 2012-12-26 東京エレクトロン株式会社 熱処理装置、塗布現像処理システム、熱処理方法、塗布現像処理方法及びその熱処理方法又は塗布現像処理方法を実行させるためのプログラムを記録した記録媒体
JP5258981B2 (ja) 2010-02-05 2013-08-07 東京エレクトロン株式会社 基板保持具及び基板搬送装置及び基板処理装置
KR101080604B1 (ko) 2010-02-09 2011-11-04 성균관대학교산학협력단 원자층 식각 장치 및 이를 이용한 식각 방법
JP2011162830A (ja) 2010-02-09 2011-08-25 Fuji Electric Co Ltd プラズマｃｖｄによる成膜方法、成膜済基板および成膜装置
TWI539517B (zh) 2010-02-12 2016-06-21 應用材料股份有限公司 使用於處理腔室之套件及使用用於氣流改良之套件之處理腔室
US8562272B2 (en) 2010-02-16 2013-10-22 Lam Research Corporation Substrate load and unload mechanisms for high throughput
US8293658B2 (en) 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
US8859047B2 (en) 2010-02-23 2014-10-14 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
USD625977S1 (en) 2010-02-25 2010-10-26 Vertex Stone and Chinaware Ltd. Spacer tool
JP2011181681A (ja) 2010-03-01 2011-09-15 Mitsui Eng & Shipbuild Co Ltd 原子層堆積方法及び原子層堆積装置
US8241991B2 (en) 2010-03-05 2012-08-14 Asm Japan K.K. Method for forming interconnect structure having airgap
US9175394B2 (en) 2010-03-12 2015-11-03 Applied Materials, Inc. Atomic layer deposition chamber with multi inject
FR2957716B1 (fr) 2010-03-18 2012-10-05 Soitec Silicon On Insulator Procede de finition d'un substrat de type semi-conducteur sur isolant
US8039388B1 (en) 2010-03-24 2011-10-18 Taiwam Semiconductor Manufacturing Company, Ltd. Main spacer trim-back method for replacement gate process
US8709551B2 (en) 2010-03-25 2014-04-29 Novellus Systems, Inc. Smooth silicon-containing films
US20110232677A1 (en) 2010-03-29 2011-09-29 Tokyo Electron Limited Method for cleaning low-k dielectrics
EP2730676A1 (en) 2010-04-01 2014-05-14 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method for deposition of silicon nitride layers
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US8252691B2 (en) 2010-04-14 2012-08-28 Asm Genitech Korea Ltd. Method of forming semiconductor patterns
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8993460B2 (en) 2013-01-10 2015-03-31 Novellus Systems, Inc. Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
CZ303655B6 (cs) 2010-04-16 2013-01-30 Skutchanová@Zuzana Zpusob výroby brousicího povrchu skleneného kosmetického prípravku
KR101121858B1 (ko) 2010-04-27 2012-03-21 주식회사 하이닉스반도체 반도체 소자의 제조 방법
CH702999A1 (de) 2010-04-29 2011-10-31 Amt Ag Vorrichtung zur Beschichtung von Substraten mittels Hochgeschwindigkeitsflammspritzen.
JP2013527609A (ja) 2010-04-30 2013-06-27 アプライド マテリアルズ インコーポレイテッド 縦型インラインｃｖｄシステム
US8707754B2 (en) 2010-04-30 2014-04-29 Applied Materials, Inc. Methods and apparatus for calibrating flow controllers in substrate processing systems
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
US8721798B2 (en) 2010-04-30 2014-05-13 Applied Materials, Inc. Methods for processing substrates in process systems having shared resources
US9441295B2 (en) 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
US20110294075A1 (en) 2010-05-25 2011-12-01 United Microelectronics Corp. Patterning method
US8513129B2 (en) 2010-05-28 2013-08-20 Applied Materials, Inc. Planarizing etch hardmask to increase pattern density and aspect ratio
WO2011151996A1 (ja) 2010-06-01 2011-12-08 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
US8912353B2 (en) 2010-06-02 2014-12-16 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for depositing films comprising same
US8637390B2 (en) 2010-06-04 2014-01-28 Applied Materials, Inc. Metal gate structures and methods for forming thereof
MX2012014091A (es) 2010-06-09 2013-01-29 Procter & Gamble Produccion de alimentacion semicontinua de composiciones liquidas para el cuidado personal.
TWI509695B (zh) 2010-06-10 2015-11-21 Asm Int 使膜選擇性沈積於基板上的方法
JP5525339B2 (ja) 2010-06-10 2014-06-18 ナブテスコ株式会社 ロボットアーム
JP2012004401A (ja) 2010-06-18 2012-01-05 Fujitsu Semiconductor Ltd 半導体装置の製造方法
TW201213599A (en) 2010-07-02 2012-04-01 Matheson Tri Gas Inc Thin films and methods of making them using cyclohexasilane
US9373677B2 (en) 2010-07-07 2016-06-21 Entegris, Inc. Doping of ZrO2 for DRAM applications
WO2012011423A1 (ja) 2010-07-22 2012-01-26 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US8721791B2 (en) 2010-07-28 2014-05-13 Applied Materials, Inc. Showerhead support structure for improved gas flow
JP5490753B2 (ja) 2010-07-29 2014-05-14 東京エレクトロン株式会社 トレンチの埋め込み方法および成膜システム
US8669185B2 (en) 2010-07-30 2014-03-11 Asm Japan K.K. Method of tailoring conformality of Si-containing film
US9443753B2 (en) 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
JP2012038819A (ja) 2010-08-04 2012-02-23 Sanyo Electric Co Ltd 半導体レーザ装置および光装置
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US8357608B2 (en) 2010-08-09 2013-01-22 International Business Machines Corporation Multi component dielectric layer
US9449858B2 (en) 2010-08-09 2016-09-20 Applied Materials, Inc. Transparent reflector plate for rapid thermal processing chamber
US9783885B2 (en) 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
KR101249999B1 (ko) 2010-08-12 2013-04-03 주식회사 디엠에스 화학기상증착 장치
KR101658492B1 (ko) 2010-08-13 2016-09-21 삼성전자주식회사 미세 패턴의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
US9487600B2 (en) 2010-08-17 2016-11-08 Uchicago Argonne, Llc Ordered nanoscale domains by infiltration of block copolymers
USD649986S1 (en) 2010-08-17 2011-12-06 Ebara Corporation Sealing ring
US8685845B2 (en) 2010-08-20 2014-04-01 International Business Machines Corporation Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
US8945305B2 (en) 2010-08-31 2015-02-03 Micron Technology, Inc. Methods of selectively forming a material using parylene coating
CN102383106B (zh) 2010-09-03 2013-12-25 甘志银 快速清除残余反应气体的金属有机物化学气相沉积反应腔体
US8394466B2 (en) 2010-09-03 2013-03-12 Asm Japan K.K. Method of forming conformal film having si-N bonds on high-aspect ratio pattern
EP2426233B1 (en) 2010-09-03 2013-05-01 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of dialkyl monoalkoxy aluminum for the growth of Al2O3 thin films for photovoltaic applications
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US20120058630A1 (en) 2010-09-08 2012-03-08 Veeco Instruments Inc. Linear Cluster Deposition System
US20120064690A1 (en) 2010-09-10 2012-03-15 Elpida Memory, Inc. Method for manufacturing semiconductor device
JP5560147B2 (ja) 2010-09-13 2014-07-23 東京エレクトロン株式会社 成膜方法及び半導体装置の製造方法
KR20120029291A (ko) 2010-09-16 2012-03-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
US8524612B2 (en) 2010-09-23 2013-09-03 Novellus Systems, Inc. Plasma-activated deposition of conformal films
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US8722548B2 (en) 2010-09-24 2014-05-13 International Business Machines Corporation Structures and techniques for atomic layer deposition
US7994070B1 (en) 2010-09-30 2011-08-09 Tokyo Electron Limited Low-temperature dielectric film formation by chemical vapor deposition
TW201224190A (en) 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
US8076250B1 (en) 2010-10-06 2011-12-13 Applied Materials, Inc. PECVD oxide-nitride and oxide-silicon stacks for 3D memory application
FR2965888B1 (fr) 2010-10-08 2012-12-28 Alcatel Lucent Canalisation d'evacuation de gaz et procede d'evacuation associe
JP5638405B2 (ja) 2010-10-08 2014-12-10 パナソニック株式会社 基板のプラズマ処理方法
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
CN103109357B (zh) 2010-10-19 2016-08-24 应用材料公司 用于紫外线纳米固化腔室的石英喷洒器
US8192901B2 (en) 2010-10-21 2012-06-05 Asahi Glass Company, Limited Glass substrate-holding tool
USD654882S1 (en) 2010-10-21 2012-02-28 Tokyo Electron Limited Gas-separating plate for reactor for manufacturing semiconductor
USD655261S1 (en) 2010-10-21 2012-03-06 Tokyo Electron Limited Gas-separating plate for reactor for manufacturing semiconductor
USD654884S1 (en) 2010-10-21 2012-02-28 Tokyo Electron Limited Top plate for reactor for manufacturing semiconductor
JP6004179B2 (ja) 2010-10-21 2016-10-05 日産化学工業株式会社 Ｅｕｖリソグラフィー用レジスト上層膜形成組成物
USD655260S1 (en) 2010-10-21 2012-03-06 Tokyo Electron Limited Gas-separating plate for reactor for manufacturing semiconductor
US8845806B2 (en) 2010-10-22 2014-09-30 Asm Japan K.K. Shower plate having different aperture dimensions and/or distributions
JP2013542613A (ja) 2010-10-27 2013-11-21 アプライド マテリアルズ インコーポレイテッド フォトレジスト線幅の荒れを制御するための方法及び装置
US8926788B2 (en) 2010-10-27 2015-01-06 Lam Research Ag Closed chamber for wafer wet processing
JP5544343B2 (ja) 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
KR20120047325A (ko) 2010-11-01 2012-05-11 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
WO2012061593A2 (en) 2010-11-03 2012-05-10 Applied Materials, Inc. Apparatus and methods for deposition of silicon carbide and silicon carbonitride films
WO2012061278A1 (en) 2010-11-05 2012-05-10 Synos Technology, Inc. Radical reactor with multiple plasma chambers
US8470187B2 (en) 2010-11-05 2013-06-25 Asm Japan K.K. Method of depositing film with tailored comformality
JP5722595B2 (ja) 2010-11-11 2015-05-20 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US20120121823A1 (en) 2010-11-12 2012-05-17 Applied Materials, Inc. Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film
KR20140015280A (ko) 2010-11-22 2014-02-06 이 아이 듀폰 디 네모아 앤드 캄파니 반도체 잉크, 피막, 코팅된 기재 및 제조방법
KR20120055363A (ko) 2010-11-23 2012-05-31 삼성전자주식회사 커패시터 및 이를 포함하는 반도체 소자
KR101212941B1 (ko) * 2010-11-26 2012-12-18 주식회사 테스 가변형 샤워 헤드
KR20130055694A (ko) 2010-11-29 2013-05-28 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치
US20120149213A1 (en) 2010-12-09 2012-06-14 Lakshminarayana Nittala Bottom up fill in high aspect ratio trenches
WO2012077590A1 (ja) 2010-12-09 2012-06-14 株式会社アルバック 有機薄膜形成装置
KR101866719B1 (ko) 2010-12-20 2018-06-11 에베 그룹 에. 탈너 게엠베하 웨이퍼의 장착을 위한 수용 수단
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
KR20140003495A (ko) 2010-12-20 2014-01-09 어플라이드 머티어리얼스, 인코포레이티드 집적 손상 내성을 개선하기 위한 인-시튜 저-k 캡핑
JP5735304B2 (ja) 2010-12-21 2015-06-17 株式会社日立国際電気 基板処理装置、基板の製造方法、半導体デバイスの製造方法およびガス供給管
US8314034B2 (en) 2010-12-23 2012-11-20 Intel Corporation Feature size reduction
JP2012138500A (ja) 2010-12-27 2012-07-19 Tokyo Electron Ltd タングステン膜又は酸化タングステン膜上への酸化シリコン膜の成膜方法及び成膜装置
JP5675331B2 (ja) 2010-12-27 2015-02-25 東京エレクトロン株式会社 トレンチの埋め込み方法
US8901016B2 (en) 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
JP5573666B2 (ja) 2010-12-28 2014-08-20 東京エレクトロン株式会社 原料供給装置及び成膜装置
FR2970110B1 (fr) 2010-12-29 2013-09-06 St Microelectronics Crolles 2 Procede de fabrication d'une couche de dielectrique polycristalline
JP6104817B2 (ja) 2010-12-30 2017-03-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ マイクロ波プラズマを用いた薄膜堆積
KR101306315B1 (ko) 2011-01-11 2013-09-09 주식회사 디엠에스 화학기상증착 장치
JP5236755B2 (ja) 2011-01-14 2013-07-17 東京エレクトロン株式会社 成膜装置及び成膜方法
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
JP5609663B2 (ja) 2011-01-18 2014-10-22 旭硝子株式会社 ガラス基板保持手段、およびそれを用いたｅｕｖマスクブランクスの製造方法
JP5782279B2 (ja) 2011-01-20 2015-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US8398773B2 (en) 2011-01-21 2013-03-19 Asm International N.V. Thermal processing furnace and liner for the same
US8969823B2 (en) 2011-01-21 2015-03-03 Uchicago Argonne, Llc Microchannel plate detector and methods for their fabrication
US8450191B2 (en) 2011-01-24 2013-05-28 Applied Materials, Inc. Polysilicon films by HDP-CVD
CN103329259B (zh) 2011-01-26 2015-05-27 应用材料公司 氮化硅与氮氧化硅的等离子体处理
US8465811B2 (en) 2011-01-28 2013-06-18 Asm Japan K.K. Method of depositing film by atomic layer deposition with pulse-time-modulated plasma
JP2012164736A (ja) 2011-02-04 2012-08-30 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
US20120263876A1 (en) 2011-02-14 2012-10-18 Asm Ip Holding B.V. Deposition of silicon dioxide on hydrophobic surfaces
US8329599B2 (en) 2011-02-18 2012-12-11 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
US8563443B2 (en) 2011-02-18 2013-10-22 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
TWM412450U (en) 2011-02-21 2011-09-21 Santoma Ltd Ceramic Glass composite electrode and Fluorescent
US20120219824A1 (en) 2011-02-28 2012-08-30 Uchicago Argonne Llc Atomic layer deposition of super-conducting niobium silicide
JP2012195562A (ja) 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 異径基板用アタッチメントおよび基板処理装置ならびに基板若しくは半導体デバイスの製造方法
US8466411B2 (en) 2011-03-03 2013-06-18 Asm Japan K.K. Calibration method of UV sensor for UV curing
CN102655086B (zh) 2011-03-03 2015-07-01 东京毅力科创株式会社 半导体器件的制造方法
US8501605B2 (en) 2011-03-14 2013-08-06 Applied Materials, Inc. Methods and apparatus for conformal doping
JP5820731B2 (ja) 2011-03-22 2015-11-24 株式会社日立国際電気 基板処理装置および固体原料補充方法
US9684234B2 (en) 2011-03-24 2017-06-20 Uchicago Argonne, Llc Sequential infiltration synthesis for enhancing multiple-patterning lithography
US8980418B2 (en) 2011-03-24 2015-03-17 Uchicago Argonne, Llc Sequential infiltration synthesis for advanced lithography
JP5203482B2 (ja) 2011-03-28 2013-06-05 株式会社小松製作所 加熱装置
EP2691977B1 (en) 2011-03-31 2019-06-05 IMEC vzw Method for growing a monocrystalline tin-containing semiconductor material
KR101923167B1 (ko) 2011-04-07 2018-11-29 피코순 오와이 플라즈마 소오스를 갖는 원자층 퇴적
US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
US8900402B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8371567B2 (en) 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
US8298951B1 (en) 2011-04-13 2012-10-30 Asm Japan K.K. Footing reduction using etch-selective layer
WO2012141067A1 (ja) 2011-04-15 2012-10-18 タツモ株式会社 ウエハ交換装置およびウエハ支持用ハンド
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US8492170B2 (en) 2011-04-25 2013-07-23 Applied Materials, Inc. UV assisted silylation for recovery and pore sealing of damaged low K films
US8592005B2 (en) 2011-04-26 2013-11-26 Asm Japan K.K. Atomic layer deposition for controlling vertical film growth
USD655055S1 (en) 2011-04-28 2012-02-28 Carolyn Grace Toll Pet outfit
US8746284B2 (en) 2011-05-11 2014-06-10 Intermolecular, Inc. Apparatus and method for multiple symmetrical divisional gas distribution
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US8771807B2 (en) 2011-05-24 2014-07-08 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for making and using same
JP2012244180A (ja) 2011-05-24 2012-12-10 Macronix Internatl Co Ltd 多層接続構造及びその製造方法
JP5730670B2 (ja) 2011-05-27 2015-06-10 株式会社Adeka 酸化モリブデンを含有する薄膜の製造方法、及び酸化モリブデンを含有する薄膜の形成用原料
US20120304935A1 (en) 2011-05-31 2012-12-06 Oosterlaken Theodorus G M Bubbler assembly and method for vapor flow control
JP2013012719A (ja) 2011-05-31 2013-01-17 Hitachi Kokusai Electric Inc 基板処理装置および基板処理方法
US9136180B2 (en) 2011-06-01 2015-09-15 Asm Ip Holding B.V. Process for depositing electrode with high effective work function
US8692319B2 (en) 2011-06-03 2014-04-08 Infineon Technologies Austria Ag Lateral trench MESFET
WO2012167141A2 (en) 2011-06-03 2012-12-06 Novellus Systems, Inc. Metal and silicon containing capping layers for interconnects
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US8927318B2 (en) 2011-06-14 2015-01-06 International Business Machines Corporation Spalling methods to form multi-junction photovoltaic structure
TW201308021A (zh) 2011-06-15 2013-02-16 Applied Materials Inc 調控增強的電子自旋以控制光阻線寬粗糙度之方法與設備
US9175392B2 (en) 2011-06-17 2015-11-03 Intermolecular, Inc. System for multi-region processing
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US8450212B2 (en) 2011-06-28 2013-05-28 International Business Machines Corporation Method of reducing critical dimension process bias differences between narrow and wide damascene wires
WO2013006242A1 (en) 2011-07-06 2013-01-10 Wayne State University Atomic layer deposition of transition metal thin films
US10707082B2 (en) 2011-07-06 2020-07-07 Asm International N.V. Methods for depositing thin films comprising indium nitride by atomic layer deposition
US8962400B2 (en) 2011-07-07 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ doping of arsenic for source and drain epitaxy
WO2013008422A1 (ja) 2011-07-12 2013-01-17 パナソニック株式会社 窒化物半導体装置およびその製造方法
US20130014697A1 (en) 2011-07-12 2013-01-17 Asm Japan K.K. Container Having Multiple Compartments Containing Liquid Material for Multiple Wafer-Processing Chambers
US9018567B2 (en) 2011-07-13 2015-04-28 Asm International N.V. Wafer processing apparatus with heated, rotating substrate support
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
JP5940342B2 (ja) 2011-07-15 2016-06-29 東京エレクトロン株式会社 基板搬送装置、基板処理システムおよび基板搬送方法、ならびに記憶媒体
US9630127B2 (en) 2011-07-19 2017-04-25 Hayward Industries, Inc. Filter vessel assembly and related methods of use
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
JP5789149B2 (ja) 2011-07-21 2015-10-07 Ｊｓｗアフティ株式会社 原子層成長方法及び原子層成長装置
US8778448B2 (en) 2011-07-21 2014-07-15 International Business Machines Corporation Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
US8716072B2 (en) 2011-07-25 2014-05-06 International Business Machines Corporation Hybrid CMOS technology with nanowire devices and double gated planar devices
US8551892B2 (en) 2011-07-27 2013-10-08 Asm Japan K.K. Method for reducing dielectric constant of film using direct plasma of hydrogen
US20130025786A1 (en) 2011-07-28 2013-01-31 Vladislav Davidkovich Systems for and methods of controlling time-multiplexed deep reactive-ion etching processes
US20130034061A1 (en) * 2011-08-02 2013-02-07 Broadcom Corporation Reverse direction protocol implementation
CN102931083B (zh) 2011-08-10 2015-07-29 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
US9184100B2 (en) 2011-08-10 2015-11-10 United Microelectronics Corp. Semiconductor device having strained fin structure and method of making the same
TWI450999B (zh) 2011-08-19 2014-09-01 Tokyo Electron Ltd Ge-Sb-Te film forming method, Ge-Te film forming method, Sb-Te film forming method and memory medium
US8614047B2 (en) 2011-08-26 2013-12-24 International Business Machines Corporation Photodecomposable bases and photoresist compositions
TWI492298B (zh) 2011-08-26 2015-07-11 Applied Materials Inc 雙重圖案化蝕刻製程
US20130048606A1 (en) 2011-08-31 2013-02-28 Zhigang Mao Methods for in-situ chamber dry clean in photomask plasma etching processing chamber
US20130217239A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-and-carbon-containing layers for semiconductor processing
US20130217241A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers
US20130217243A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
US20130217240A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-carbon-nitrogen layers for semiconductor processing
US20130064973A1 (en) 2011-09-09 2013-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Chamber Conditioning Method
JP2013062361A (ja) 2011-09-13 2013-04-04 Tokyo Electron Ltd 熱処理装置、温度制御システム、熱処理方法、温度制御方法及びその熱処理方法又はその温度制御方法を実行させるためのプログラムを記録した記録媒体
US9177872B2 (en) 2011-09-16 2015-11-03 Micron Technology, Inc. Memory cells, semiconductor devices, systems including such cells, and methods of fabrication
JP1438745S (zh) 2011-09-20 2015-04-06
JP1438319S (zh) 2011-09-20 2015-04-06
US20130068970A1 (en) 2011-09-21 2013-03-21 Asm Japan K.K. UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations
JP5549655B2 (ja) 2011-09-26 2014-07-16 株式会社安川電機 ハンドおよびロボット
KR101913891B1 (ko) 2011-09-27 2018-10-31 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법 및 반도체 장치의 제조 방법
US8993072B2 (en) 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
US9644796B2 (en) 2011-09-29 2017-05-09 Applied Materials, Inc. Methods for in-situ calibration of a flow controller
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
JP6042656B2 (ja) 2011-09-30 2016-12-14 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
USD709536S1 (en) 2011-09-30 2014-07-22 Tokyo Electron Limited Focusing ring
USD709537S1 (en) 2011-09-30 2014-07-22 Tokyo Electron Limited Focusing ring
US8569184B2 (en) 2011-09-30 2013-10-29 Asm Japan K.K. Method for forming single-phase multi-element film by PEALD
WO2013050338A1 (en) 2011-10-03 2013-04-11 Asml Netherlands B.V. Method to provide a patterned orientation template for a self-assemblable polymer
KR102058760B1 (ko) 2011-10-10 2019-12-23 브레우어 사이언스 인코포레이션 리소그래피 처리를 위한 스핀-온 탄소 조성물
JP6202798B2 (ja) 2011-10-12 2017-09-27 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． 酸化アンチモン膜の原子層堆積
US9281231B2 (en) 2011-10-12 2016-03-08 Ferrotec (Usa) Corporation Non-contact magnetic drive assembly with mechanical stop elements
US8759234B2 (en) 2011-10-17 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Deposited material and method of formation
USD695240S1 (en) 2011-10-20 2013-12-10 Tokyo Electron Limited Arm for wafer transportation for manufacturing semiconductor
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
CN103094067B (zh) 2011-10-31 2015-10-14 上海华虹宏力半导体制造有限公司 一种半导体器件的制造方法
TWI541377B (zh) 2011-11-04 2016-07-11 Ａｓｍ國際股份有限公司 形成摻雜二氧化矽薄膜的方法
US8927059B2 (en) 2011-11-08 2015-01-06 Applied Materials, Inc. Deposition of metal films using alane-based precursors
US20130122712A1 (en) 2011-11-14 2013-05-16 Jong Mun Kim Method of etching high aspect ratio features in a dielectric layer
US20130119018A1 (en) 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
US10276410B2 (en) 2011-11-25 2019-04-30 Nhk Spring Co., Ltd. Substrate support device
JP5694129B2 (ja) 2011-11-29 2015-04-01 株式会社東芝 半導体装置及びその製造方法
US8633115B2 (en) 2011-11-30 2014-01-21 Applied Materials, Inc. Methods for atomic layer etching
US9112003B2 (en) 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
CN104115270B (zh) 2011-12-14 2017-12-08 英特尔公司 具有包含多个金属氧化物层的绝缘体堆叠体的金属‑绝缘体‑金属(mim)电容器
US20130157409A1 (en) 2011-12-16 2013-06-20 Kaushik Vaidya Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices
KR101891458B1 (ko) 2011-12-20 2018-08-24 인텔 코포레이션 Iii-v 반도체 재료 층을 갖는 반도체 디바이스
USD691974S1 (en) 2011-12-22 2013-10-22 Tokyo Electron Limited Holding pad for transferring a wafer
CN104126228B (zh) 2011-12-23 2016-12-07 英特尔公司 非平面栅极全包围器件及其制造方法
US9388492B2 (en) 2011-12-27 2016-07-12 Asm America, Inc. Vapor flow control apparatus for atomic layer deposition
US20130161629A1 (en) 2011-12-27 2013-06-27 Applied Materials, Inc. Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application
JP5679581B2 (ja) 2011-12-27 2015-03-04 東京エレクトロン株式会社 成膜方法
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
KR20130076979A (ko) 2011-12-29 2013-07-09 삼성전자주식회사 반도체 소자 및 이의 제조방법
CN102505114A (zh) 2012-01-03 2012-06-20 西安电子科技大学 基于Ni膜辅助退火的SiC衬底上石墨烯制备方法
TW201330086A (zh) 2012-01-05 2013-07-16 Duan-Ren Yu 蝕刻裝置
US8659066B2 (en) 2012-01-06 2014-02-25 International Business Machines Corporation Integrated circuit with a thin body field effect transistor and capacitor
USD676943S1 (en) 2012-01-11 2013-02-26 Bill Kluss Pipe end cap
US20130183814A1 (en) 2012-01-13 2013-07-18 Applied Materials, Inc. Method of depositing a silicon germanium tin layer on a substrate
US10838123B2 (en) 2012-01-19 2020-11-17 Supriya Jaiswal Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
USD665055S1 (en) 2012-01-24 2012-08-07 Asm Ip Holding B.V. Shower plate
JP5601331B2 (ja) 2012-01-26 2014-10-08 株式会社安川電機 ロボットハンドおよびロボット
US9466524B2 (en) 2012-01-31 2016-10-11 Applied Materials, Inc. Method of depositing metals using high frequency plasma
US9177826B2 (en) 2012-02-02 2015-11-03 Globalfoundries Inc. Methods of forming metal nitride materials
US9238865B2 (en) 2012-02-06 2016-01-19 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
USD698904S1 (en) 2012-02-08 2014-02-04 Asm Ip Holding B.V. Vacuum flange ring
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
JP5912637B2 (ja) 2012-02-17 2016-04-27 東京エレクトロン株式会社 半導体装置の製造方法
US20130224964A1 (en) 2012-02-28 2013-08-29 Asm Ip Holding B.V. Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond
US9162209B2 (en) 2012-03-01 2015-10-20 Novellus Systems, Inc. Sequential cascading of reaction volumes as a chemical reuse strategy
US9202727B2 (en) 2012-03-02 2015-12-01 ASM IP Holding Susceptor heater shim
US8785285B2 (en) 2012-03-08 2014-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
US11626279B2 (en) 2012-03-09 2023-04-11 Versum Materials Us, Llc Compositions and methods for making silicon containing films
WO2013134661A1 (en) 2012-03-09 2013-09-12 Air Products And Chemicals, Inc. Barrier materials for display devices
US8912101B2 (en) 2012-03-15 2014-12-16 Asm Ip Holding B.V. Method for forming Si-containing film using two precursors by ALD
WO2013137115A1 (ja) 2012-03-15 2013-09-19 東京エレクトロン株式会社 成膜方法及び成膜装置
USD715410S1 (en) 2012-03-21 2014-10-14 Blucher Metal A/S Roof drain
US9682398B2 (en) 2012-03-30 2017-06-20 Applied Materials, Inc. Substrate processing system having susceptorless substrate support with enhanced substrate heating control
US9082684B2 (en) 2012-04-02 2015-07-14 Applied Materials, Inc. Method of epitaxial doped germanium tin alloy formation
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
GB201206096D0 (en) 2012-04-05 2012-05-16 Dyson Technology Ltd Atomic layer deposition
US9460912B2 (en) 2012-04-12 2016-10-04 Air Products And Chemicals, Inc. High temperature atomic layer deposition of silicon oxide thin films
US20130269612A1 (en) 2012-04-16 2013-10-17 Hermes-Epitek Corporation Gas Treatment Apparatus with Surrounding Spray Curtains
US8535767B1 (en) 2012-04-18 2013-09-17 Asm Ip Holding B.V. Method for repairing damage of dielectric film by hydrocarbon restoration and hydrocarbon depletion using UV irradiation
US10679883B2 (en) 2012-04-19 2020-06-09 Intevac, Inc. Wafer plate and mask arrangement for substrate fabrication
KR102104688B1 (ko) 2012-04-19 2020-05-29 인테벡, 인코포레이티드 태양 전지 제조를 위한 이중 마스크 장치
US20130280891A1 (en) 2012-04-20 2013-10-24 Yihwan Kim Method and apparatus for germanium tin alloy formation by thermal cvd
US8647439B2 (en) 2012-04-26 2014-02-11 Applied Materials, Inc. Method of epitaxial germanium tin alloy surface preparation
KR102072872B1 (ko) 2012-04-26 2020-02-03 인테벡, 인코포레이티드 진공 처리용 시스템 아키텍처
US10062600B2 (en) 2012-04-26 2018-08-28 Intevac, Inc. System and method for bi-facial processing of substrates
US20130288485A1 (en) 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
TWI622664B (zh) 2012-05-02 2018-05-01 Ａｓｍ智慧財產控股公司 相穩定薄膜，包括該薄膜之結構及裝置，及其形成方法
US8728832B2 (en) 2012-05-07 2014-05-20 Asm Ip Holdings B.V. Semiconductor device dielectric interface layer
JP2013235912A (ja) 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
TWI522490B (zh) 2012-05-10 2016-02-21 應用材料股份有限公司 利用微波電漿化學氣相沈積在基板上沈積膜的方法
US20130302520A1 (en) 2012-05-11 2013-11-14 Kai-An Wang Co-evaporation system comprising vapor pre-mixer
US8853826B2 (en) 2012-05-14 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for bipolar junction transistors and resistors
US20130312663A1 (en) 2012-05-22 2013-11-28 Applied Microstructures, Inc. Vapor Delivery Apparatus
US8846543B2 (en) 2012-05-24 2014-09-30 Jinhong Tong Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics
US8785215B2 (en) 2012-05-31 2014-07-22 Asm Ip Holding B.V. Method for repairing damage of dielectric film by cyclic processes
US20130320429A1 (en) 2012-05-31 2013-12-05 Asm Ip Holding B.V. Processes and structures for dopant profile control in epitaxial trench fill
US8900886B2 (en) 2012-06-01 2014-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. System and method of monitoring and controlling atomic layer deposition of tungsten
US9978585B2 (en) 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
US9337018B2 (en) 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
WO2013182878A2 (en) 2012-06-07 2013-12-12 Soitec Gas injection components for deposition systems, deposition systems including such components, and related methods
US20130330911A1 (en) 2012-06-08 2013-12-12 Yi-Chiau Huang Method of semiconductor film stabilization
USD723330S1 (en) 2012-06-11 2015-03-03 Barry Dean York Debris mask and basin
US8722546B2 (en) 2012-06-11 2014-05-13 Asm Ip Holding B.V. Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control
US9984866B2 (en) 2012-06-12 2018-05-29 Component Re-Engineering Company, Inc. Multiple zone heater
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US20130337653A1 (en) 2012-06-15 2013-12-19 Asm Ip Holding B.V. Semiconductor processing apparatus with compact free radical source
KR20150023016A (ko) 2012-06-15 2015-03-04 피코순 오와이 원자층 퇴적에 의한 기판 웹 코팅
US8962078B2 (en) 2012-06-22 2015-02-24 Tokyo Electron Limited Method for depositing dielectric films
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US10535735B2 (en) 2012-06-29 2020-01-14 Intel Corporation Contact resistance reduced P-MOS transistors employing Ge-rich contact layer
TWD157605S (zh) 2012-07-04 2013-12-01 中磊電子股份有限公司 做為微型基地台的多模組化組合之通訊裝置
US9023737B2 (en) 2012-07-11 2015-05-05 Asm Ip Holding B.V. Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment
US9630284B2 (en) 2012-07-12 2017-04-25 Lincoln Global, Inc. Configurable welding table and force indicating clamp
SG11201407907XA (en) 2012-07-13 2015-01-29 Gallium Entpr Pty Ltd Apparatus and method for film formation
US8784950B2 (en) 2012-07-16 2014-07-22 Asm Ip Holding B.V. Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group
EP2875166B1 (en) 2012-07-20 2018-04-11 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Organosilane precursors for ald/cvd silicon-containing film applications
US20140023794A1 (en) 2012-07-23 2014-01-23 Maitreyee Mahajani Method And Apparatus For Low Temperature ALD Deposition
US9911676B2 (en) 2012-07-27 2018-03-06 Asm Ip Holding B.V. System and method for gas-phase passivation of a semiconductor surface
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
US20140034632A1 (en) 2012-08-01 2014-02-06 Heng Pan Apparatus and method for selective oxidation at lower temperature using remote plasma source
US8911826B2 (en) 2012-08-02 2014-12-16 Asm Ip Holding B.V. Method of parallel shift operation of multiple reactors
US9514932B2 (en) 2012-08-08 2016-12-06 Applied Materials, Inc. Flowable carbon for semiconductor processing
US8664627B1 (en) 2012-08-08 2014-03-04 Asm Ip Holding B.V. Method for supplying gas with flow rate gradient over substrate
US8912070B2 (en) 2012-08-16 2014-12-16 The Institute of Microelectronics Chinese Academy of Science Method for manufacturing semiconductor device
US9370757B2 (en) 2012-08-21 2016-06-21 Uop Llc Pyrolytic reactor
US9707530B2 (en) 2012-08-21 2017-07-18 Uop Llc Methane conversion apparatus and process using a supersonic flow reactor
US9169975B2 (en) 2012-08-28 2015-10-27 Asm Ip Holding B.V. Systems and methods for mass flow controller verification
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9121097B2 (en) * 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
US8859368B2 (en) 2012-09-04 2014-10-14 Globalfoundries Inc. Semiconductor device incorporating a multi-function layer into gate stacks
US8742668B2 (en) 2012-09-05 2014-06-03 Asm Ip Holdings B.V. Method for stabilizing plasma ignition
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
WO2014039194A1 (en) 2012-09-07 2014-03-13 Applied Materials, Inc. Integrated processing of porous dielectric, polymer-coated substrates and epoxy within a multi-chamber vacuum system confirmation
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
JP5882167B2 (ja) 2012-09-13 2016-03-09 東京エレクトロン株式会社 熱処理装置
JP6022272B2 (ja) 2012-09-14 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US20140077240A1 (en) 2012-09-17 2014-03-20 Radek Roucka Iv material photonic device on dbr
US11149370B2 (en) 2012-09-19 2021-10-19 Apjet, Inc. Atmospheric-pressure plasma processing apparatus and method
US8921207B2 (en) 2012-09-24 2014-12-30 Asm Ip Holding B.V., Inc. Tin precursors for vapor deposition and deposition processes
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
JP6042160B2 (ja) 2012-10-03 2016-12-14 東京エレクトロン株式会社 成膜方法及び成膜装置
US20140099798A1 (en) 2012-10-05 2014-04-10 Asm Ip Holding B.V. UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same
US9353441B2 (en) 2012-10-05 2016-05-31 Asm Ip Holding B.V. Heating/cooling pedestal for semiconductor-processing apparatus
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
JP2014086472A (ja) 2012-10-19 2014-05-12 Sinfonia Technology Co Ltd クランプ装置及びワーク搬送ロボット
US9064948B2 (en) 2012-10-22 2015-06-23 Globalfoundries Inc. Methods of forming a semiconductor device with low-k spacers and the resulting device
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9230815B2 (en) 2012-10-26 2016-01-05 Appled Materials, Inc. Methods for depositing fluorine/carbon-free conformal tungsten
WO2014070600A1 (en) 2012-10-29 2014-05-08 Matheson Tri-Gas, Inc. Methods for selective and conformal epitaxy of highly doped si-containing materials for three dimensional structures
US20140116335A1 (en) 2012-10-31 2014-05-01 Asm Ip Holding B.V. UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation Apparatus
JP5960028B2 (ja) 2012-10-31 2016-08-02 東京エレクトロン株式会社 熱処理装置
US9330899B2 (en) 2012-11-01 2016-05-03 Asm Ip Holding B.V. Method of depositing thin film
US9105587B2 (en) 2012-11-08 2015-08-11 Micron Technology, Inc. Methods of forming semiconductor structures with sulfur dioxide etch chemistries
US8784951B2 (en) 2012-11-16 2014-07-22 Asm Ip Holding B.V. Method for forming insulation film using non-halide precursor having four or more silicons
US9190486B2 (en) 2012-11-20 2015-11-17 Globalfoundries Inc. Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance
CN104822866B (zh) 2012-11-27 2017-09-01 索泰克公司 具有可互换气体喷射器的沉积系统和相关的方法
KR102046976B1 (ko) 2012-12-04 2019-12-02 삼성전자주식회사 반도체 메모리 장치 및 그 제조 방법
US9362092B2 (en) 2012-12-07 2016-06-07 LGS Innovations LLC Gas dispersion disc assembly
US9123577B2 (en) 2012-12-12 2015-09-01 Sandisk Technologies Inc. Air gap isolation in non-volatile memory using sacrificial films
KR101792165B1 (ko) 2012-12-18 2017-10-31 시스타 케미칼즈 인코포레이티드 박막 증착 반응기 및 박막 층의 반응계내 건식 세정 공정 및 방법
US9064857B2 (en) 2012-12-19 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. N metal for FinFET
JP6068130B2 (ja) 2012-12-25 2017-01-25 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US20140182053A1 (en) 2012-12-29 2014-07-03 Alexander Yeh Industry Co., Ltd. Pullable drain plug
EP2750167A1 (en) 2012-12-31 2014-07-02 Imec Method for tuning the effective work function of a gate structure in a semiconductor device
US20140186544A1 (en) 2013-01-02 2014-07-03 Applied Materials, Inc. Metal processing using high density plasma
KR20140089793A (ko) 2013-01-07 2014-07-16 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
US10358718B2 (en) 2013-01-16 2019-07-23 Universiteit Gent Methods for obtaining hydrophilic fluoropolymers
US10557190B2 (en) 2013-01-24 2020-02-11 Tokyo Electron Limited Substrate processing apparatus and susceptor
KR20140095738A (ko) 2013-01-25 2014-08-04 삼성전자주식회사 트랜지스터 및 그 제조 방법
US9018093B2 (en) 2013-01-25 2015-04-28 Asm Ip Holding B.V. Method for forming layer constituted by repeated stacked layers
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
US9399228B2 (en) 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
EP2765218A1 (en) 2013-02-07 2014-08-13 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
US9184045B2 (en) 2013-02-08 2015-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom-up PEALD process
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9758866B2 (en) 2013-02-13 2017-09-12 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
KR20140102782A (ko) 2013-02-14 2014-08-25 삼성전자주식회사 웨이퍼 이송용 블레이드 및 이를 포함하는 웨이퍼 이송 장치
US8932923B2 (en) 2013-02-19 2015-01-13 Globalfoundries Inc. Semiconductor gate structure for threshold voltage modulation and method of making same
FR3002241B1 (fr) 2013-02-21 2015-11-20 Altatech Semiconductor Dispositif de depot chimique en phase vapeur
JP5934665B2 (ja) 2013-02-22 2016-06-15 東京エレクトロン株式会社 成膜方法、プログラム、コンピュータ記憶媒体及び成膜システム
USD743357S1 (en) 2013-03-01 2015-11-17 Asm Ip Holding B.V. Susceptor
US8790743B1 (en) 2013-03-04 2014-07-29 Asm Ip Holding B.V. Method for controlling cyclic plasma-assisted process
JP6125279B2 (ja) 2013-03-05 2017-05-10 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
USD702188S1 (en) 2013-03-08 2014-04-08 Asm Ip Holding B.V. Thermocouple
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
USD723153S1 (en) 2013-03-08 2015-02-24 Olen Borkholder Recess ceiling fan bezel
US8933528B2 (en) 2013-03-11 2015-01-13 International Business Machines Corporation Semiconductor fin isolation by a well trapping fin portion
US9312222B2 (en) 2013-03-12 2016-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Patterning approach for improved via landing profile
KR101317942B1 (ko) 2013-03-13 2013-10-16 (주)테키스트 반도체 제조용 척의 에지링 냉각모듈
US20140273531A1 (en) 2013-03-14 2014-09-18 Asm Ip Holding B.V. Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES
US20140273534A1 (en) 2013-03-14 2014-09-18 Tokyo Electron Limited Integration of absorption based heating bake methods into a photolithography track system
US9824881B2 (en) 2013-03-14 2017-11-21 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US9309978B2 (en) * 2013-03-14 2016-04-12 Dresser-Rand Company Low head to stem ratio poppet valve
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US9564309B2 (en) 2013-03-14 2017-02-07 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
KR20200098737A (ko) 2013-03-15 2020-08-20 어플라이드 머티어리얼스, 인코포레이티드 프로세싱 챔버에서 튜닝 전극을 사용하여 플라즈마 프로파일을 튜닝하기 위한 장치 및 방법
WO2014140672A1 (en) 2013-03-15 2014-09-18 L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude Bis(alkylimido)-bis(alkylamido)molybdenum molecules for deposition of molybdenum-containing films
TWI627305B (zh) 2013-03-15 2018-06-21 應用材料股份有限公司 用於轉盤處理室之具有剛性板的大氣蓋
US9909492B2 (en) 2013-03-15 2018-03-06 Prime Group Alliance, Llc Opposed piston internal combustion engine with inviscid layer sealing
US8984962B2 (en) 2013-03-15 2015-03-24 H. Aaron Christmann Rotatable torque-measuring apparatus and method
US20140273530A1 (en) 2013-03-15 2014-09-18 Victor Nguyen Post-Deposition Treatment Methods For Silicon Nitride
US9666702B2 (en) 2013-03-15 2017-05-30 Matthew H. Kim Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices
WO2014150260A1 (en) 2013-03-15 2014-09-25 Applied Materials, Inc Process load lock apparatus, lift assemblies, electronic device processing systems, and methods of processing substrates in load lock locations
JP6096547B2 (ja) 2013-03-21 2017-03-15 東京エレクトロン株式会社 プラズマ処理装置及びシャワープレート
USD734377S1 (en) 2013-03-28 2015-07-14 Hirata Corporation Top cover of a load lock chamber
JP6134191B2 (ja) 2013-04-07 2017-05-24 村川 惠美 回転型セミバッチａｌｄ装置
US9142437B2 (en) 2013-04-10 2015-09-22 Globalfoundries Inc. System for separately handling different size FOUPs
US8864202B1 (en) 2013-04-12 2014-10-21 Varian Semiconductor Equipment Associates, Inc. Spring retained end effector contact pad
JP2014216647A (ja) 2013-04-29 2014-11-17 エーエスエムアイピー ホールディング ビー．ブイ． 金属ドープされた抵抗切り替え層を有する抵抗変化型メモリを製造する方法
USD766849S1 (en) 2013-05-15 2016-09-20 Ebara Corporation Substrate retaining ring
US9252024B2 (en) 2013-05-17 2016-02-02 Applied Materials, Inc. Deposition chambers with UV treatment and methods of use
US9365924B2 (en) 2013-05-23 2016-06-14 Asm Ip Holding B.V. Method for forming film by plasma-assisted deposition using two-frequency combined pulsed RF power
US9142393B2 (en) 2013-05-23 2015-09-22 Asm Ip Holding B.V. Method for cleaning reaction chamber using pre-cleaning process
US8900467B1 (en) 2013-05-25 2014-12-02 HGST Netherlands B.V. Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis
USD726365S1 (en) 2013-05-29 2015-04-07 Sis Resources Ltd. Mouthpiece plug for electronic cigarette
US9245740B2 (en) 2013-06-07 2016-01-26 Dnf Co., Ltd. Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same
US9117657B2 (en) 2013-06-07 2015-08-25 Asm Ip Holding B.V. Method for filling recesses using pre-treatment with hydrocarbon-containing gas
US9123510B2 (en) 2013-06-12 2015-09-01 ASM IP Holding, B.V. Method for controlling in-plane uniformity of substrate processed by plasma-assisted process
US20140367043A1 (en) 2013-06-17 2014-12-18 Applied Materials, Inc. Method for fast and repeatable plasma ignition and tuning in plasma chambers
CN105164791A (zh) 2013-06-26 2015-12-16 应用材料公司 沉积金属合金膜的方法
US20150004798A1 (en) 2013-06-28 2015-01-01 Lam Research Corporation Chemical deposition chamber having gas seal
KR101767855B1 (ko) 2013-07-02 2017-08-11 울트라테크 인크. 격자 전위들을 제거하기 위한 급속 열적 프로세싱에 의한 헤테로에피택셜 층들의 형성
US9677176B2 (en) 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
JP5861676B2 (ja) 2013-07-08 2016-02-16 株式会社安川電機 吸着構造、ロボットハンドおよびロボット
US20150010381A1 (en) 2013-07-08 2015-01-08 United Microelectronics Corp. Wafer processing chamber and method for transferring wafer in the same
USD705745S1 (en) 2013-07-08 2014-05-27 Witricity Corporation Printed resonator coil
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US8940646B1 (en) 2013-07-12 2015-01-27 Lam Research Corporation Sequential precursor dosing in an ALD multi-station/batch reactor
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US8986562B2 (en) 2013-08-07 2015-03-24 Ultratech, Inc. Methods of laser processing photoresist in a gaseous environment
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US8900999B1 (en) 2013-08-16 2014-12-02 Applied Materials, Inc. Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application
WO2015026230A1 (en) 2013-08-19 2015-02-26 Asm Ip Holding B.V. Twin-assembly of diverging semiconductor processing systems
US9209033B2 (en) 2013-08-21 2015-12-08 Tel Epion Inc. GCIB etching method for adjusting fin height of finFET devices
US9190263B2 (en) 2013-08-22 2015-11-17 Asm Ip Holding B.V. Method for forming SiOCH film using organoaminosilane annealing
US9136108B2 (en) 2013-09-04 2015-09-15 Asm Ip Holding B.V. Method for restoring porous surface of dielectric layer by UV light-assisted ALD
US9484199B2 (en) 2013-09-06 2016-11-01 Applied Materials, Inc. PECVD microcrystalline silicon germanium (SiGe)
USD716742S1 (en) 2013-09-13 2014-11-04 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
USD724553S1 (en) 2013-09-13 2015-03-17 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
US10312127B2 (en) 2013-09-16 2019-06-04 Applied Materials, Inc. Compliant robot blade for defect reduction
US9284642B2 (en) 2013-09-19 2016-03-15 Asm Ip Holding B.V. Method for forming oxide film by plasma-assisted processing
US9378971B1 (en) 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9018103B2 (en) 2013-09-26 2015-04-28 Lam Research Corporation High aspect ratio etch with combination mask
WO2015048303A1 (en) 2013-09-26 2015-04-02 Applied Materials, Inc Pneumatic end effector apparatus, substrate transportation systems, and methods for transporting substrates
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
WO2015045163A1 (ja) 2013-09-30 2015-04-02 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、基板処理システム及び記録媒体
US9396986B2 (en) 2013-10-04 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming a trench structure
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9576790B2 (en) 2013-10-16 2017-02-21 Asm Ip Holding B.V. Deposition of boron and carbon containing materials
US9034717B2 (en) 2013-10-16 2015-05-19 Taiwan Semiconductor Manufacturing Company Limited Semiconductor-on-insulator structure and method of fabricating the same
US20150111374A1 (en) 2013-10-18 2015-04-23 International Business Machines Corporation Surface treatment in a dep-etch-dep process
JP5847783B2 (ja) 2013-10-21 2016-01-27 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
US9343308B2 (en) 2013-10-28 2016-05-17 Asm Ip Holding B.V. Method for trimming carbon-containing film at reduced trimming rate
WO2015065823A1 (en) 2013-10-28 2015-05-07 Sigma-Aldrich Co. Llc Metal complexes containing amidoimine ligands
US9029272B1 (en) 2013-10-31 2015-05-12 Asm Ip Holding B.V. Method for treating SiOCH film with hydrogen plasma
KR20150052996A (ko) 2013-11-07 2015-05-15 삼성디스플레이 주식회사 기판 이송 장치 및 이를 포함하는 박막 증착 장치
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
USD739222S1 (en) 2013-11-13 2015-09-22 Jeff Chadbourne Two-piece magnetic clamp
KR20150061179A (ko) 2013-11-26 2015-06-04 에스케이하이닉스 주식회사 플라즈마 강화 기상 증착
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
TWI588286B (zh) 2013-11-26 2017-06-21 烏翠泰克股份有限公司 經改良的電漿強化原子層沉積方法、周期及裝置
US9620382B2 (en) 2013-12-06 2017-04-11 University Of Maryland, College Park Reactor for plasma-based atomic layer etching of materials
TW201525173A (zh) 2013-12-09 2015-07-01 Applied Materials Inc 選擇性層沉積之方法
US9401273B2 (en) 2013-12-11 2016-07-26 Asm Ip Holding B.V. Atomic layer deposition of silicon carbon nitride based materials
US10431489B2 (en) 2013-12-17 2019-10-01 Applied Materials, Inc. Substrate support apparatus having reduced substrate particle generation
CN105830211A (zh) 2013-12-17 2016-08-03 德克萨斯仪器股份有限公司 使用光刻-冷冻-光刻-蚀刻工艺的细长接触件
KR102102787B1 (ko) 2013-12-17 2020-04-22 삼성전자주식회사 기판 처리 장치 및 블록커 플레이트 어셈블리
US9245742B2 (en) 2013-12-18 2016-01-26 Asm Ip Holding B.V. Sulfur-containing thin films
US9478419B2 (en) 2013-12-18 2016-10-25 Asm Ip Holding B.V. Sulfur-containing thin films
US9362385B2 (en) 2013-12-18 2016-06-07 Taiwan Semiconductor Manufacturing Company Ltd. Method for tuning threshold voltage of semiconductor device with metal gate structure
WO2015091781A2 (en) 2013-12-18 2015-06-25 Imec Vzw Method of producing transition metal dichalcogenide layer
US20150179640A1 (en) 2013-12-19 2015-06-25 Globalfoundries Inc. Common fabrication of different semiconductor devices with different threshold voltages
KR20150073251A (ko) 2013-12-20 2015-07-01 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
KR102146705B1 (ko) 2013-12-23 2020-08-21 삼성전자주식회사 반도체 소자의 배선 구조물 및 그 형성 방법
US9698035B2 (en) 2013-12-23 2017-07-04 Lam Research Corporation Microstructures for improved wafer handling
US9406547B2 (en) 2013-12-24 2016-08-02 Intel Corporation Techniques for trench isolation using flowable dielectric materials
US9159561B2 (en) 2013-12-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
JP6247095B2 (ja) 2013-12-27 2017-12-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6461168B2 (ja) 2014-01-17 2019-01-30 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 半導体光源を有する加熱システム
US9677172B2 (en) 2014-01-21 2017-06-13 Applied Materials, Inc. Methods for forming a cobalt-ruthenium liner layer for interconnect structures
KR101846763B1 (ko) 2014-01-23 2018-04-06 울트라테크 인크. 증기 전달 시스템
USD732145S1 (en) 2014-02-04 2015-06-16 Asm Ip Holding B.V. Shower plate
USD724701S1 (en) 2014-02-04 2015-03-17 ASM IP Holding, B.V. Shower plate
TWI686499B (zh) 2014-02-04 2020-03-01 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬、金屬氧化物與介電質的選擇性沉積
USD720838S1 (en) 2014-02-04 2015-01-06 Asm Ip Holding B.V. Shower plate
USD726884S1 (en) 2014-02-04 2015-04-14 Asm Ip Holding B.V. Heater block
USD725168S1 (en) 2014-02-04 2015-03-24 Asm Ip Holding B.V. Heater block
USD732644S1 (en) 2014-02-04 2015-06-23 Asm Ip Holding B.V. Top plate
US9370863B2 (en) 2014-02-04 2016-06-21 Asm Ip Holding B.V. Anti-slip end-effector for transporting workpiece
US8993457B1 (en) 2014-02-06 2015-03-31 Cypress Semiconductor Corporation Method of fabricating a charge-trapping gate stack using a CMOS process flow
US9416447B2 (en) 2014-02-07 2016-08-16 HGST Netherlands B.V. Method for line density multiplication using block copolymers and sequential infiltration synthesis
US9281211B2 (en) 2014-02-10 2016-03-08 International Business Machines Corporation Nanoscale interconnect structure
USD733257S1 (en) 2014-02-14 2015-06-30 Hansgrohe Se Overhead shower
US9576952B2 (en) 2014-02-25 2017-02-21 Globalfoundries Inc. Integrated circuits with varying gate structures and fabrication methods
US9362180B2 (en) 2014-02-25 2016-06-07 Globalfoundries Inc. Integrated circuit having multiple threshold voltages
JP6303592B2 (ja) 2014-02-25 2018-04-04 東京エレクトロン株式会社 基板処理装置
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9425078B2 (en) 2014-02-26 2016-08-23 Lam Research Corporation Inhibitor plasma mediated atomic layer deposition for seamless feature fill
TWI626701B (zh) 2014-02-27 2018-06-11 斯克林集團公司 基板處理裝置及基板處理方法
KR20150104817A (ko) 2014-03-06 2015-09-16 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
US20150255324A1 (en) 2014-03-06 2015-09-10 Applied Materials, Inc. Seamless gap-fill with spatial atomic layer deposition
JP2015173230A (ja) 2014-03-12 2015-10-01 株式会社東芝 半導体装置及び半導体装置の製造方法
US10109534B2 (en) 2014-03-14 2018-10-23 Applied Materials, Inc. Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD)
JP6379550B2 (ja) 2014-03-18 2018-08-29 東京エレクトロン株式会社 成膜装置
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US20150267295A1 (en) 2014-03-19 2015-09-24 Asm Ip Holding B.V. Removable substrate tray and assembly and reactor including same
US9299557B2 (en) 2014-03-19 2016-03-29 Asm Ip Holding B.V. Plasma pre-clean module and process
KR102308587B1 (ko) 2014-03-19 2021-10-01 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
WO2015140983A1 (ja) 2014-03-20 2015-09-24 株式会社 東芝 非水電解質電池用活物質、非水電解質電池用電極、非水電解質二次電池、電池パック及び非水電解質電池用活物質の製造方法
JP6270575B2 (ja) 2014-03-24 2018-01-31 株式会社日立国際電気 反応管、基板処理装置及び半導体装置の製造方法
JP6304592B2 (ja) 2014-03-25 2018-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US9637823B2 (en) 2014-03-31 2017-05-02 Asm Ip Holding B.V. Plasma atomic layer deposition
JP6254036B2 (ja) 2014-03-31 2017-12-27 三菱重工業株式会社 三次元積層装置及び三次元積層方法
US9343350B2 (en) 2014-04-03 2016-05-17 Asm Ip Holding B.V. Anti-slip end effector for transporting workpiece using van der waals force
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9663857B2 (en) 2014-04-07 2017-05-30 Asm Ip Holding B.V. Method for stabilizing reaction chamber pressure
KR102094470B1 (ko) 2014-04-08 2020-03-27 삼성전자주식회사 반도체 소자 및 그 제조 방법
US10047435B2 (en) 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9184054B1 (en) 2014-04-25 2015-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
US9343294B2 (en) 2014-04-28 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure having air gap and method of forming the same
US9464352B2 (en) 2014-05-02 2016-10-11 Asm Ip Holding B.V. Low-oxidation plasma-assisted process
EP3140067B1 (en) 2014-05-08 2019-04-03 Stratasys Ltd. Method and apparatus for 3d printing by selective sintering
TWI518751B (zh) 2014-05-14 2016-01-21 國立清華大學 成分元素濃度漸變分佈之載子通道及其製作方法
US9343343B2 (en) 2014-05-19 2016-05-17 Asm Ip Holding B.V. Method for reducing particle generation at bevel portion of substrate
US9257557B2 (en) 2014-05-20 2016-02-09 Globalfoundries Inc. Semiconductor structure with self-aligned wells and multiple channel materials
US9577192B2 (en) 2014-05-21 2017-02-21 Sony Semiconductor Solutions Corporation Method for forming a metal cap in a semiconductor memory device
USD733262S1 (en) 2014-05-22 2015-06-30 Young Boung Kang Disposer of connection member for kitchen sink bowl
JP2016005900A (ja) 2014-05-27 2016-01-14 パナソニックＩｐマネジメント株式会社 ガスバリア膜、ガスバリア膜付きフィルム基板およびこれを備えた電子デバイス。
US20150348755A1 (en) 2014-05-29 2015-12-03 Charm Engineering Co., Ltd. Gas distribution apparatus and substrate processing apparatus including same
US10978315B2 (en) 2014-05-30 2021-04-13 Ebara Corporation Vacuum evacuation system
EP2953162A1 (en) 2014-06-06 2015-12-09 IMEC vzw Method for manufacturing a semiconductor device comprising transistors each having a different effective work function
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US10998228B2 (en) 2014-06-12 2021-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned interconnect with protection layer
USD743513S1 (en) 2014-06-13 2015-11-17 Asm Ip Holding B.V. Seal ring
KR102195003B1 (ko) 2014-06-18 2020-12-24 삼성전자주식회사 반도체 다이오드, 가변 저항 메모리 장치 및 가변 저항 메모리 장치의 제조 방법
USD753629S1 (en) 2014-06-19 2016-04-12 Yamaha Corporation Speaker
US20150367253A1 (en) 2014-06-24 2015-12-24 Us Synthetic Corporation Photoluminescent thin-layer chromatography plate and methods for making same
US20150380296A1 (en) 2014-06-25 2015-12-31 Lam Research Corporation Cleaning of carbon-based contaminants in metal interconnects for interconnect capping applications
US9825191B2 (en) 2014-06-27 2017-11-21 Sunpower Corporation Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials
USD736348S1 (en) 2014-07-07 2015-08-11 Jiangmen Triumph Rain Showers Co., LTD Spray head for a shower
JP6347544B2 (ja) 2014-07-09 2018-06-27 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9349620B2 (en) 2014-07-09 2016-05-24 Asm Ip Holdings B.V. Apparatus and method for pre-baking substrate upstream of process chamber
US20160020094A1 (en) 2014-07-18 2016-01-21 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
KR102262887B1 (ko) 2014-07-21 2021-06-08 삼성전자주식회사 반도체 장치 및 그 제조 방법
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9617638B2 (en) 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US10176996B2 (en) 2014-08-06 2019-01-08 Globalfoundries Inc. Replacement metal gate and fabrication process with reduced lithography steps
USD751176S1 (en) 2014-08-07 2016-03-08 Hansgrohe Se Overhead shower
US9252238B1 (en) 2014-08-18 2016-02-02 Lam Research Corporation Semiconductor structures with coplanar recessed gate layers and fabrication methods
KR20160021958A (ko) 2014-08-18 2016-02-29 삼성전자주식회사 플라즈마 처리 장치 및 기판 처리 방법
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9349637B2 (en) 2014-08-21 2016-05-24 Lam Research Corporation Method for void-free cobalt gap fill
US10224222B2 (en) 2014-09-09 2019-03-05 Asm Ip Holding B.V. Assembly of liner and flange for vertical furnace as well as a vertical process furnace
USD742202S1 (en) 2014-09-11 2015-11-03 Thomas Jason Cyphers Sign frame key
US9576792B2 (en) 2014-09-17 2017-02-21 Asm Ip Holding B.V. Deposition of SiN
US9214333B1 (en) 2014-09-24 2015-12-15 Lam Research Corporation Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
KR102247416B1 (ko) 2014-09-24 2021-05-03 인텔 코포레이션 표면 종단을 갖는 나노와이어를 사용하여 형성되는 스케일링된 tfet 트랜지스터
US9478414B2 (en) 2014-09-26 2016-10-25 Asm Ip Holding B.V. Method for hydrophobization of surface of silicon-containing film by ALD
WO2015041376A1 (ja) 2014-09-30 2015-03-26 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および反応管
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9558946B2 (en) 2014-10-03 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods of forming FinFETs
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
EP3009482B1 (en) 2014-10-13 2018-10-03 Heraeus Deutschland GmbH & Co. KG Copper coloured paint
US9530787B2 (en) 2014-10-20 2016-12-27 Sandisk Technologies Llc Batch contacts for multiple electrically conductive layers
KR101535573B1 (ko) 2014-11-04 2015-07-13 연세대학교 산학협력단 전이금속 칼코겐 화합물 합성 방법
KR102268187B1 (ko) 2014-11-10 2021-06-24 삼성전자주식회사 자기 기억 소자 및 그 제조 방법
US9305836B1 (en) 2014-11-10 2016-04-05 International Business Machines Corporation Air gap semiconductor structure with selective cap bilayer
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
JP2016098406A (ja) 2014-11-21 2016-05-30 東京エレクトロン株式会社 モリブデン膜の成膜方法
US9914995B2 (en) 2014-11-21 2018-03-13 Applied Materials, Inc. Alcohol assisted ALD film deposition
US9589790B2 (en) 2014-11-24 2017-03-07 Lam Research Corporation Method of depositing ammonia free and chlorine free conformal silicon nitride film
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
JP6086892B2 (ja) 2014-11-25 2017-03-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9837281B2 (en) 2014-11-26 2017-12-05 Asm Ip Holding B.V. Cyclic doped aluminum nitride deposition
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9406683B2 (en) 2014-12-04 2016-08-02 International Business Machines Corporation Wet bottling process for small diameter deep trench capacitors
US9384998B2 (en) 2014-12-04 2016-07-05 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9620377B2 (en) 2014-12-04 2017-04-11 Lab Research Corporation Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
US9997373B2 (en) 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9951421B2 (en) 2014-12-10 2018-04-24 Lam Research Corporation Inlet for effective mixing and purging
US20160168699A1 (en) 2014-12-12 2016-06-16 Asm Ip Holding B.V. Method for depositing metal-containing film using particle-reduction step
US10062564B2 (en) 2014-12-15 2018-08-28 Tokyo Electron Limited Method of selective gas phase film deposition on a substrate by modifying the surface using hydrogen plasma
US9820289B1 (en) 2014-12-18 2017-11-14 Sprint Spectrum L.P. Method and system for managing quantity of carriers in air interface connection based on type of content
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9515072B2 (en) 2014-12-26 2016-12-06 Taiwan Semiconductor Manufacturing Company Ltd. FinFET structure and method for manufacturing thereof
US9324846B1 (en) 2015-01-08 2016-04-26 Globalfoundries Inc. Field plate in heterojunction bipolar transistor with improved break-down voltage
USD753269S1 (en) 2015-01-09 2016-04-05 Asm Ip Holding B.V. Top plate
US9396956B1 (en) 2015-01-16 2016-07-19 Asm Ip Holding B.V. Method of plasma-enhanced atomic layer etching
US9496040B2 (en) 2015-01-22 2016-11-15 Sandisk Technologies Llc Adaptive multi-page programming methods and apparatus for non-volatile memory
JP6470057B2 (ja) 2015-01-29 2019-02-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
KR102185458B1 (ko) 2015-02-03 2020-12-03 에이에스엠 아이피 홀딩 비.브이. 선택적 퇴적
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US10228291B2 (en) 2015-02-25 2019-03-12 Kokusai Electric Corporation Substrate processing apparatus, and thermocouple
US10548504B2 (en) 2015-03-06 2020-02-04 Ethicon Llc Overlaid multi sensor radio frequency (RF) electrode system to measure tissue compression
US9808246B2 (en) 2015-03-06 2017-11-07 Ethicon Endo-Surgery, Llc Method of operating a powered surgical instrument
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
IL237775B (en) 2015-03-16 2019-03-31 Redler Tech Ltd Automatic, highly reliable, fully redundant electornic circuit breaker that includes means for preventing short-circuit overcurrent
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
JP2016178223A (ja) 2015-03-20 2016-10-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6484478B2 (ja) 2015-03-25 2019-03-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6458595B2 (ja) 2015-03-27 2019-01-30 東京エレクトロン株式会社 成膜装置及び成膜方法並びに記憶媒体
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US20160307904A1 (en) 2015-04-16 2016-10-20 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Niobium-containing film forming compositions and vapor deposition of niobium-containing films
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
US9343297B1 (en) 2015-04-22 2016-05-17 Asm Ip Holding B.V. Method for forming multi-element thin film constituted by at least five elements by PEALD
US11384432B2 (en) 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
JP2016213475A (ja) 2015-05-13 2016-12-15 東京エレクトロン株式会社 シュリンク及び成長方法を使用する極端紫外線感度低下
JP1547057S (zh) 2015-05-28 2016-04-04
US9711350B2 (en) 2015-06-03 2017-07-18 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation
JP1545222S (zh) 2015-06-10 2016-03-07
KR102696320B1 (ko) 2015-06-12 2024-08-20 어플라이드 머티어리얼스, 인코포레이티드 반도체 에피택시 성장을 위한 주입기
US10053774B2 (en) 2015-06-12 2018-08-21 Asm Ip Holding B.V. Reactor system for sublimation of pre-clean byproducts and method thereof
US9646883B2 (en) 2015-06-12 2017-05-09 International Business Machines Corporation Chemoepitaxy etch trim using a self aligned hard mask for metal line to via
US9647071B2 (en) 2015-06-15 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. FINFET structures and methods of forming the same
US9711396B2 (en) 2015-06-16 2017-07-18 Asm Ip Holding B.V. Method for forming metal chalcogenide thin films on a semiconductor device
US10438795B2 (en) 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
WO2017004050A1 (en) 2015-06-29 2017-01-05 Applied Materials, Inc. Temperature controlled substrate processing
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10174437B2 (en) 2015-07-09 2019-01-08 Applied Materials, Inc. Wafer electroplating chuck assembly
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
JP6578243B2 (ja) 2015-07-17 2019-09-18 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ ガス供給ノズル、基板処理装置、半導体装置の製造方法およびプログラム
US20170025291A1 (en) 2015-07-22 2017-01-26 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-chamber furnace for batch processing
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10309011B2 (en) 2015-07-29 2019-06-04 Korea Research Institute Of Standards And Science Method for manufacturing two-dimensional transition metal dichalcogemide thin film
JP6502779B2 (ja) 2015-07-29 2019-04-17 東京エレクトロン株式会社 ガス供給系のバルブのリークを検査する方法
JP6560924B2 (ja) 2015-07-29 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
KR102420087B1 (ko) 2015-07-31 2022-07-12 삼성전자주식회사 반도체 소자의 제조 방법
US10428421B2 (en) 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US10566185B2 (en) 2015-08-05 2020-02-18 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US20170051402A1 (en) 2015-08-17 2017-02-23 Asm Ip Holding B.V. Susceptor and substrate processing apparatus
JP1549882S (zh) 2015-08-18 2016-05-23
US20170051405A1 (en) 2015-08-18 2017-02-23 Asm Ip Holding B.V. Method for forming sin or sicn film in trenches by peald
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
US10410857B2 (en) 2015-08-24 2019-09-10 Asm Ip Holding B.V. Formation of SiN thin films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9523148B1 (en) 2015-08-25 2016-12-20 Asm Ip Holdings B.V. Process for deposition of titanium oxynitride for use in integrated circuit fabrication
US10121671B2 (en) 2015-08-28 2018-11-06 Applied Materials, Inc. Methods of depositing metal films using metal oxyhalide precursors
US11514096B2 (en) 2015-09-01 2022-11-29 Panjiva, Inc. Natural language processing for entity resolution
JP1546345S (zh) 2015-09-04 2016-03-22
JP6448502B2 (ja) 2015-09-09 2019-01-09 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム
US9601693B1 (en) 2015-09-24 2017-03-21 Lam Research Corporation Method for encapsulating a chalcogenide material
WO2017053771A1 (en) 2015-09-25 2017-03-30 Applied Materials, Inc. Grooved backing plate for standing wave compensation
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
KR102395997B1 (ko) 2015-09-30 2022-05-10 삼성전자주식회사 자기 저항 메모리 소자 및 그 제조 방법
US9853101B2 (en) 2015-10-07 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Strained nanowire CMOS device and method of forming
US10695794B2 (en) 2015-10-09 2020-06-30 Asm Ip Holding B.V. Vapor phase deposition of organic films
EP3360155B1 (en) 2015-10-09 2022-10-05 Applied Materials, Inc. Diode laser for wafer heating for epi processes
USD810705S1 (en) 2016-04-01 2018-02-20 Veeco Instruments Inc. Self-centering wafer carrier for chemical vapor deposition
USD819580S1 (en) 2016-04-01 2018-06-05 Veeco Instruments, Inc. Self-centering wafer carrier for chemical vapor deposition
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
TWI740848B (zh) 2015-10-16 2021-10-01 荷蘭商Ａｓｍ智慧財產控股公司 實施原子層沉積以得閘極介電質
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
JP6464990B2 (ja) 2015-10-21 2019-02-06 東京エレクトロン株式会社 縦型熱処理装置
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
KR102424720B1 (ko) 2015-10-22 2022-07-25 삼성전자주식회사 수직형 메모리 장치 및 이의 제조 방법
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
TWD177995S (zh) 2015-11-18 2016-09-01 Asm Ip Holding Bv 用於半導體製造設備之氣體供應板
WO2017091345A1 (en) 2015-11-25 2017-06-01 Applied Materials, Inc. New materials for tensile stress and low contact resistance and method of forming
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
US20170178899A1 (en) 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
AT518081B1 (de) 2015-12-22 2017-07-15 Sico Tech Gmbh Injektor aus Silizium für die Halbleiterindustrie
CH711990A2 (de) 2015-12-22 2017-06-30 Interglass Tech Ag Vakuumbeschichtungsanlage zum Beschichten von Linsen.
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9633838B2 (en) 2015-12-28 2017-04-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition of silicon-containing films using penta-substituted disilanes
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
TWD178698S (zh) 2016-01-08 2016-10-01 Asm Ip Holding Bv 用於半導體製造設備的反應器外壁
TWD178424S (zh) 2016-01-08 2016-09-21 Asm Ip Holding Bv 用於半導體製造設備的氣流控制板
TWD178425S (zh) 2016-01-08 2016-09-21 Asm Ip Holding Bv 用於半導體製造設備的電極板
US9412648B1 (en) 2016-01-11 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Via patterning using multiple photo multiple etch
US10865477B2 (en) 2016-02-08 2020-12-15 Illinois Tool Works Inc. Method and system for the localized deposit of metal on a surface
US9570302B1 (en) 2016-02-10 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of patterning a material layer
JP6538582B2 (ja) 2016-02-15 2019-07-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
JP2019510877A (ja) 2016-02-19 2019-04-18 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ モリブデンカルボニル前駆体を使用したモリブデン薄膜の蒸着
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US9748145B1 (en) 2016-02-29 2017-08-29 Globalfoundries Inc. Semiconductor devices with varying threshold voltage and fabrication methods thereof
US10018920B2 (en) 2016-03-04 2018-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with a gas phase resist
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
TWI722132B (zh) 2016-03-13 2021-03-21 美商應用材料股份有限公司 用於間隔墊應用之氮化矽薄膜的選擇性沉積
US10134672B2 (en) 2016-03-15 2018-11-20 Toshiba Memory Corporation Semiconductor memory device having a stepped structure and contact wirings formed thereon
KR20170107323A (ko) 2016-03-15 2017-09-25 연세대학교 산학협력단 전이금속 칼코겐 화합물 합금 및 그의 제조방법
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
JP6576277B2 (ja) 2016-03-23 2019-09-18 東京エレクトロン株式会社 窒化膜の形成方法
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
KR101990332B1 (ko) 2016-03-28 2019-06-18 가부시키가이샤 히다치 하이테크놀로지즈 플라스마 처리 방법 및 플라스마 처리 장치
JP6566904B2 (ja) 2016-03-29 2019-08-28 東京エレクトロン株式会社 基板処理装置
JP6608753B2 (ja) 2016-03-31 2019-11-20 株式会社ノリタケカンパニーリミテド ＰｄＲｕ合金電極材料およびその製造方法
JP6095825B2 (ja) 2016-04-08 2017-03-15 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
KR20190002659A (ko) 2016-06-07 2019-01-08 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 노구부, 반도체 장치의 제조 방법 및 프로그램
US10014212B2 (en) 2016-06-08 2018-07-03 Asm Ip Holding B.V. Selective deposition of metallic films
US10002958B2 (en) 2016-06-08 2018-06-19 The United States Of America, As Represented By The Secretary Of The Navy Diamond on III-nitride device
USD785766S1 (en) 2016-06-15 2017-05-02 Asm Ip Holding B.V. Shower plate
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10217863B2 (en) 2016-06-28 2019-02-26 International Business Machines Corporation Fabrication of a vertical fin field effect transistor with an asymmetric gate structure
KR20190045410A (ko) 2016-06-30 2019-05-02 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US20180344956A1 (en) 2016-07-01 2018-12-06 Cai Gu Huang Inhaler Device for Administering Powered Pharmaceutical Compositions via Inhalation
WO2018008088A1 (ja) 2016-07-05 2018-01-11 株式会社日立国際電気 基板処理装置、ガスノズルおよび半導体装置の製造方法
US9812319B1 (en) 2016-07-06 2017-11-07 Asm Ip Holding B.V. Method for forming film filled in trench without seam or void
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
USD793352S1 (en) 2016-07-11 2017-08-01 Asm Ip Holding B.V. Getter plate
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US20180019165A1 (en) 2016-07-14 2018-01-18 Entegris, Inc. CVD Mo DEPOSITION BY USING MoOCl4
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
JP6616258B2 (ja) 2016-07-26 2019-12-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、蓋部カバーおよび半導体装置の製造方法
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
KR102613349B1 (ko) 2016-08-25 2023-12-14 에이에스엠 아이피 홀딩 비.브이. 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US9865455B1 (en) 2016-09-07 2018-01-09 Lam Research Corporation Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
JP6710130B2 (ja) 2016-09-13 2020-06-17 東京エレクトロン株式会社 基板処理装置
JP6710134B2 (ja) 2016-09-27 2020-06-17 東京エレクトロン株式会社 ガス導入機構及び処理装置
JP6550029B2 (ja) 2016-09-28 2019-07-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、ノズル基部および半導体装置の製造方法
KR102600998B1 (ko) 2016-09-28 2023-11-13 삼성전자주식회사 반도체 장치
US11926894B2 (en) 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US10573549B2 (en) 2016-12-01 2020-02-25 Lam Research Corporation Pad raising mechanism in wafer positioning pedestal for semiconductor processing
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US20170044664A1 (en) 2016-10-28 2017-02-16 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
JP6737139B2 (ja) 2016-11-14 2020-08-05 東京エレクトロン株式会社 ガスインジェクタ、及び縦型熱処理装置
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR102147174B1 (ko) 2016-11-18 2020-08-28 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반응관 구조 및 반도체 장치의 제조 방법
JP6804270B2 (ja) 2016-11-21 2020-12-23 東京エレクトロン株式会社 基板処理装置、および基板処理方法
US9991277B1 (en) 2016-11-28 2018-06-05 Sandisk Technologies Llc Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US20200013629A1 (en) 2016-12-15 2020-01-09 Asm Ip Holding B.V. Semiconductor processing apparatus
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US20180174801A1 (en) 2016-12-21 2018-06-21 Ulvac Technologies, Inc. Apparatuses and methods for surface treatment
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10049426B2 (en) 2017-01-03 2018-08-14 Qualcomm Incorporated Draw call visibility stream
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
JP1584906S (zh) 2017-01-31 2017-08-28
JP1584241S (zh) 2017-01-31 2017-08-21
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
JP2018148143A (ja) 2017-03-08 2018-09-20 株式会社東芝 シャワープレート、処理装置、及び吐出方法
US11081337B2 (en) 2017-03-15 2021-08-03 Versum Materials U.S., LLC Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
US10629415B2 (en) 2017-03-28 2020-04-21 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrate
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
JP7224335B2 (ja) 2017-04-10 2023-02-17 ラム リサーチ コーポレーション モリブデンを含有する低抵抗膜
US9984869B1 (en) 2017-04-17 2018-05-29 Asm Ip Holding B.V. Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gas
US10242879B2 (en) 2017-04-20 2019-03-26 Lam Research Corporation Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US11501965B2 (en) 2017-05-05 2022-11-15 Asm Ip Holding B.V. Plasma enhanced deposition processes for controlled formation of metal oxide thin films
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US20180325414A1 (en) 2017-05-12 2018-11-15 Tech4Imaging Llc Electro-magneto volume tomography system and methodology for non-invasive volume tomography
KR102417931B1 (ko) 2017-05-30 2022-07-06 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치 및 이를 포함하는 기판 처리 장치
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US10246777B2 (en) 2017-06-12 2019-04-02 Asm Ip Holding B.V. Heater block having continuous concavity
KR102474876B1 (ko) 2017-06-15 2022-12-07 삼성전자주식회사 텅스텐 전구체 및 이를 이용한 텅스텐 함유막의 형성 방법
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
TWI794238B (zh) 2017-07-13 2023-03-01 荷蘭商Ａｓｍ智慧財產控股公司 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
KR102481410B1 (ko) 2017-07-31 2022-12-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TWI815813B (zh) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10763108B2 (en) 2017-08-18 2020-09-01 Lam Research Corporation Geometrically selective deposition of a dielectric film
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US20190067095A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US20190067003A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures
US20190067014A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10106892B1 (en) 2017-08-31 2018-10-23 Globalfoundries Inc. Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6478872B1 (en) * 1999-01-18 2002-11-12 Samsung Electronics Co., Ltd. Method of delivering gas into reaction chamber and shower head used to deliver gas
US20030019580A1 (en) * 2000-03-30 2003-01-30 Strang Eric J. Method of and apparatus for tunable gas injection in a plasma processing system
CN1643179A (zh) * 2002-01-17 2005-07-20 松德沃技术公司 Ald装置和方法
CN102917767A (zh) * 2010-05-28 2013-02-06 埃克森美孚上游研究公司 整合吸附器头以及与其相关的阀设计和变化吸附法
US20130340619A1 (en) * 2011-03-01 2013-12-26 Robert F. Tammera Apparatus and Systems Having a Reciprocating Valve Head Assembly and Swing Adsorption Processes Related Thereto

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112074938A (zh) * 2018-05-03 2020-12-11 应用材料公司 用于流动分配调谐的通用可调式阻隔板

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