KR20180048224A - 좁은 갭을 갖는 축전 결합된 전극들을 사용한 서브대기압 플라즈마-강화 ald 방법 - Google Patents
좁은 갭을 갖는 축전 결합된 전극들을 사용한 서브대기압 플라즈마-강화 ald 방법 Download PDFInfo
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Abstract
플라즈마-강화 서브대기압 원자층 퇴적(서브대기압 PEALD)에 의해 막을 퇴적하기 위한 방법이 1 mm 내지 5 mm의 갭을 갖는 축전 결합된 평행 판 전극들을 사용하여 수행되며, 서브대기압 PEALD의 일 사이클은, 상기 반응 챔버에 전구체를 펄스로 공급하는 단계; 상기 반응 챔버에 반응물을 연속적으로 공급하는 단계; 상기 반응 챔버에 비활성 가스를 연속적으로 공급하는 단계; 상기 반응 챔버의 압력을 15 kPa 내지 80 kPa의 범위로 연속적으로 조절하는 단계; 및 상기 평행 판 전극들 중 하나에 글로우 방전을 위한 RF 파워를 펄스로 인가하는 단계를 포함한다.
Description
[1] 본 발명은 플라즈마-강화 원자층 퇴적(plasma-enhanced atomic layer deposition, PEALD) 방법, 더욱 상세하게는 좁은 갭을 갖는 축전 결합된 전극들을 사용한 서브대기압 PEALD 방법에 관한 것이다.
[2] 통상적으로, 플라즈마-강화 원자층 퇴적(PEALD)에서, 낮은 압력에서의(1 내지 10 mTorr) 소스 가스로부터 플라즈마가 1 내지 5 cm 이격된 두 개의 평행 판 전극들 사이에서 생성된다(Stephan Heil, "Plasma-Assisted Atomic Layer Deposition of Metal Oxides and Nitrides", Technische Universiteit Eindhoven, 2007, p. 6). PEALD가 자기-제한적 흡착 반응 공정을 사용하기 때문에 PEALD에 의해 퇴적되는 박막의 콘포말리티는 높다. 그러나 소자 소형화가 진행됨에 따라, PEALD는 미세 트렌치의 측벽 상에 퇴적되는 막의 화학 저항성 및 건식 식각 저항성과 같은 막 특성들이 편평한 표면 상에 퇴적되는 막의 막 특성들보다 열등하다는 문제에 직면하게 되며, 이는 편평한 표면 상에서보다 측벽에서의 이온 충돌이 더 약한 플라즈마에 의한 불균일한 이온 충돌에 기인한다.
[3] 관련된 기술과 관계된 문제점들 및 해결책들의 임의의 논의들은 오직 본 발명을 위한 맥락을 제공하기 위한 목적들로서 이러한 개시 내에서 포함되었으며, 본 발명이 형성된 시점에 상기 논의들 중 임의의 것 또는 모두가 알려졌다는 인정으로서 이해되지 않아야 한다.
본 발명은 전술한 문제점을 해결하는 것을 그 과제로 한다.
[4] 본 발명의 일부 실시예들에서, 열적 플라즈마는 통상의 또는 임의의 적합한 축전 결합된 플라즈마(capacitively coupled plasma, CCP) 장치를 사용한 서브대기압 압력에서의 PEALDdp 의해 생성되고, 공정 압력은 현저히 증가되고, 두 개의 평행 판 전극들 사이의 갭이 5 mm 또는 이하로 현저하게 좁아진다. 일부 실시예들에서, 실리콘-계 절연막들 또는 금속-계 절연막들은 서브대기압 PEALD를 사용하여 효율적으로 퇴적될 수 있고, 트렌치 또는 다른 패터닝된 리세스의 측벽에서 퇴적된 막의 특성들이 현저히 향상되고, 예를 들어 놀랍게도 측벽 막의 습식 식각율(wet etch rate, WER)이 상부(블랭킷) 막의 습식 식각율과 대략 동일하게 될 수 있다. 일부 실시예들에서, ALD 모드를 사용할 때에도 측벽에서의 불충분한 이온 충돌에 기인하여 일반적으로 나쁜 콘포말리티를 나타내는 카본-계 막이, 서브대기압 PEALD에 의해 퇴적될 수 있고, 퇴적된 카본-계 막의 콘포말리티는 현저히 상승될 수 있다.
[5] 관련된 기술에 대비하여 얻어질 수 있는 본 발명의 태양들 및 이점들을 요약하기 위한 목적으로서, 본 발명의 특정한 목적들 및 이점들이 본 개시 내에서 설명된다. 물론 이러한 모든 목적들 및 이점들이 본 발명의 임의의 특정한 실시예에 따라 얻어질 필요는 없다. 따라서, 예를 들어 본 기술의 당업자들은 여기서 개시되거나 제안될 수 있는 것과 같이 다른 목적들 또는 이점들을 필수적으로 달성하지 않고, 여기 개시된 하나의 이점 또는 이점들의 군을 달성하거나 최적화하는 방식으로 구체화되거나 수행될 수 있다는 점을 인식할 것이다.
[6] 본 발명의 추가적인 태양들, 특징들 및 이점들이 뒤따르는 상세한 설명으로부터 명백해질 것이다.
[7] 본 발명의 이러한, 그리고 다른 특징들이 바람직한 실시예들의 도면들을 참조로 설명될 것이며, 이는 본 발명을 설명하도록 의도되며 제한하도록 의도되는 것은 아니다. 도면들은 도시적인 목적들을 위하여 단순화되고, 필수적으로 비율에 맞게 그려진 것은 아니다.
[8] 도 1a는 본 발명의 일 실시예에서 사용 가능한 유전막을 퇴적하기 위한 플라즈마-강화 원자층 퇴적(plasma-enhanced atomic layer deposition, PEALD) 장치의 개략적인 대표도이다.
[9] 도 1b는 본 발명의 일 실시예에서 사용 가능한 흐름-통과 시스템(flow-pass system, FPS)을 사용한 전구체 공급 시스템의 개략적인 대표도를 나타낸다.
[10] 도 2는 하나의 전구체를 사용한 본 발명의 일 실시예에 따른 일 사이클 내의 서브대기압 PEALD의 개략적인 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다.
[11] 도 3은 두 개의 전구체들을 사용한 본 발명의 일 실시예에 따른 일 사이클 내의 서브대기압 PEALD의 개략적인 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다.
[12] 도 4는 두 개의 전구체들을 사용한 본 발명의 다른 실시예에 따른 일 사이클 내의 서브대기압 PEALD의 개략적인 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다.
[13] 도 5는 본 발명의 일 실시예에 따른 일 사이클 내의 서브대기압 PEALD의 개략적인 공정 시퀀스 및 일 사이클 내의 후속적인 서브대기압 표면 처리의 개략적인 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다.
[14] 도 6은 본 발명의 일 실시예에 따른 일 사이클 내의 서브대기압 표면 처리의 개략적인 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다.
[15] 도 7은 본 발명의 일 실시예에서 사용 가능한 유전막을 퇴적하기 위한 서브대기압 PEALD 장치의 개략적인 대표도이다.
[16] 도 8은 본 발명의 일 실시예에 따른 서브대기압 PEALD의 공정 시퀀스를 나타내는 플로우차트이다.
[17] 도 9는 반응물 가스 내의 산소 농도를 달리할 때 0.5 kPa 및 30 kPa의 압력들에서 플라즈마 점화를 위하여 요구되는 최소 RF 파워를 나타내며, (a)는 반응물 가스가 He를 함유할 때 (b)는 반응물 가스가 Ar를 함유할 때를 나타낸다.
[8] 도 1a는 본 발명의 일 실시예에서 사용 가능한 유전막을 퇴적하기 위한 플라즈마-강화 원자층 퇴적(plasma-enhanced atomic layer deposition, PEALD) 장치의 개략적인 대표도이다.
[9] 도 1b는 본 발명의 일 실시예에서 사용 가능한 흐름-통과 시스템(flow-pass system, FPS)을 사용한 전구체 공급 시스템의 개략적인 대표도를 나타낸다.
[10] 도 2는 하나의 전구체를 사용한 본 발명의 일 실시예에 따른 일 사이클 내의 서브대기압 PEALD의 개략적인 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다.
[11] 도 3은 두 개의 전구체들을 사용한 본 발명의 일 실시예에 따른 일 사이클 내의 서브대기압 PEALD의 개략적인 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다.
[12] 도 4는 두 개의 전구체들을 사용한 본 발명의 다른 실시예에 따른 일 사이클 내의 서브대기압 PEALD의 개략적인 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다.
[13] 도 5는 본 발명의 일 실시예에 따른 일 사이클 내의 서브대기압 PEALD의 개략적인 공정 시퀀스 및 일 사이클 내의 후속적인 서브대기압 표면 처리의 개략적인 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다.
[14] 도 6은 본 발명의 일 실시예에 따른 일 사이클 내의 서브대기압 표면 처리의 개략적인 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다.
[15] 도 7은 본 발명의 일 실시예에서 사용 가능한 유전막을 퇴적하기 위한 서브대기압 PEALD 장치의 개략적인 대표도이다.
[16] 도 8은 본 발명의 일 실시예에 따른 서브대기압 PEALD의 공정 시퀀스를 나타내는 플로우차트이다.
[17] 도 9는 반응물 가스 내의 산소 농도를 달리할 때 0.5 kPa 및 30 kPa의 압력들에서 플라즈마 점화를 위하여 요구되는 최소 RF 파워를 나타내며, (a)는 반응물 가스가 He를 함유할 때 (b)는 반응물 가스가 Ar를 함유할 때를 나타낸다.
[18] 본 개시에서, "가스"는 증기화된 고체 및/또는 액체를 포함할 수 있고, 맥락에 따라 단일 가스 또는 가스들의 혼합물에 의해 구성될 수 있다. 마찬가지로, 본 개시에서, 용어 "일", 또는 "하나"는 하나의 종 또는 맥락에 따라 다수의 종들을 포함하는 속(genus)를 가리킨다. 이러한 개시에서, 샤워헤드를 통하여 반응 챔버로 도입되는 공정 가스는 실리콘-함유 가스 및 첨가제 가스를 포함하거나, 필수적으로 구성되거나, 또는 구성될 수 있다. 첨가제 가스는 RF 파워가 첨가제 가스에 인가될 때 전구체를 산화하거나 및/또는 질화시키기 위한 가스를 포함한다. 전구체 및 첨가제 가스는 혼합 가스로서, 또는 개별적으로 반응 공간으로 도입될 수 있다. 전구체는 희유 가스(rare gas)와 같은 캐리어 가스와 함께 도입될 수 있다. 공정 가스 이외의 가스, 즉 샤워헤드를 통과하지 않고 도입되는 가스는 예를 들어 반응 공간을 씰링하기 위하여 사용될 수 있고, 이는 희유 가스와 같은 씰 가스를 포함한다. 일부 실시예들에서, "막"은 전체 타겟 또는 관심의 대상인 표면을 커버하도록 실질적으로 핀홀들(pinholes)이 없이 두께 방향에 수직한 방향으로 연속적으로 연장되는 층, 또는 타겟 또는 관심의 대상인 표면을 커버하는 층을 단순히 가리킨다. 일부 실시예들에서, "층"은 표면 상에 형성되는 특정한 두께를 갖는 구조물을 가리키거나, 또는 막 또는 비-막 구조물의 유의어이다. 막 또는 층은 특정한 특성들을 갖는 개별적인 단일 막 또는 층, 또는 복수의 막들 또는 층들에 의해 구성될 수 있고, 인접한 막들 또는 층들 사이의 경계는 명확하거나, 명확하지 않을 수 있고, 인접한 막들 또는 층들의 물리적, 화학적, 및/또는 임의의 다른 특성들, 형성 공정들 또는 순서, 및/또는 기능들 또는 목적들에 기초하여 발달될 수 있다. 추가적으로, 본 개시에서, 작업 가능한 범위가 통상의 작업에 기초하여 결정될 수 있기 때문에 변수의 임의의 두 개의 숫자들은 상기 변수의 작업 가능한 범위를 포함할 수 있고, 지시된 임의의 범위들은 종료점들을 포함하거나 배제할 수 있다. 추가적으로, 지시된 변수들의 임의의 값들은("약"과 함께 지시되는지 또는 아닌지와 무관하게) 정확한 값들 또는 대략적인 값들을 가리키고 동등값들을 포함할 수 있고, 일부 실시예들에서 평균값, 중간값, 대표값, 과반수, 등을 가리킬 수 있다. 추가적으로, 본 개시에서, 용어들 "구성된다" 및 "갖는다"는 일부 실시예들에서 "일반적으로 또는 넓게 포함한다", "포함한다", "필수적으로 구성된다", 또는 "구성된다"를 독립적으로 가리킨다. 본 개시에서, 임의의 한정되는 의미들은 일부 실시예들에서 통상의 관습적인 의미들을 필수적으로 배제하지는 않는다.
[19] 조건들 및/또는 구조물들이 특정되지 않는 본 개시에서, 당업자는 본 개시의 관점에서, 통상의 실험의 사실로서 이러한 조건들 및/또는 구조물들을 즉각적으로 제공할 수 있다.
[20] 개시된 실시예들 전체 내에서, 일 실시예에 사용되는 임의의 구성요소는, 의도된 목적들을 위하여 여기에 명백하게, 필수적으로, 또는 내재적으로 개시된 것들을 포함하여, 이들과 동등한 임의의 구성요소들로 대체될 수 있다. 더욱이, 본 발명은 장치들 및 방법들에 동일하게 적용될 수 있다.
[21] 실시예들은 바람직한 실시예들을 참조하여 설명될 것이다. 그러나 본 발명은 바람직한 실시예들에 제한되지는 않는다.
[22] 일 실시예에서, 플라즈마-강화 서브대기압 원자층 퇴적(서브대기압 PEALD)에 의해 막을 퇴적하기 위한 방법은, (1) 배기 가능한 반응 챔버 내에 축전 결합된 평행 판 전극들 사이에 기판을 놓되, 상기 평행 판 전극들 사이의 거리는 1 mm 내지 5 mm의 범위인, 상기 기판을 놓는 단계; 및 (2) 플라즈마-강화 원자층 퇴적(PEALD)에 의해 상기 기판 상에 요구되는 두께(예를 들어 2 내지 5 nm, 일반적으로 10 내지 30 nm)를 갖는 막을 퇴적하되, 상기 PEALD의 각각의 사이클은, (i) 상기 반응 챔버로 전구체를 펄스로 공급하는 단계; (ii) 상기 반응 챔버로 반응물을 연속적으로 공급하는 단계; (iii) 상기 반응 챔버로 비활성 가스(inert gas)를 연속적으로 공급하는 단계; (iv) 상기 반응 챔버의 압력을 15 kPa 내지 80 kPa의 범위에서 연속적으로 조절하는 단계; 및 (v) 상기 평행 판 전극들 중 하나에 글로우 방전(glow discharge)을 위한 RF 파워를 펄스로 인가하되, 상기 전구체 공급의 펄스와 상기 RF 파워 인가의 펄스가 중첩되지 않는, 상기 RF 파워를 인가하는 단계를 포함한다.
[23] 위의 실시예를 포함하는 일부 실시예들에서, 상기 평행 판 전극들 사이의 거리는, 상기 표면들 상에서 불균일성을 가질 때 개별적인 평행 판 전극들의 주면들 사이의 거리, 오목/돌출 표면들을 가질 때 상기 평행 판 전극 사이의 평균 거리, 및/또는 기판보다 더 큰 사이즈들을 가질 때 기판의 외주에 의해 한정되는 개별적인 평행 판 전극들의 영역들 사이의 거리로 정의될 수 있다. 상기 전극들 사이의 거리는 일반적으로 1 내지 5 mm의 범위이며, 기판의 두께가 일반적으로 0.7 mm일 때 바람직하게는 1 내지 3 mm의 범위이다.
[24] 위의 실시예를 포함하는 일부 실시예들에서, 용어 "전구체"는 일반적으로 다른 화합물을 생성하는 화학 반응에 참여하는 화합물을 가리키며, 특히 막 매트릭스 또는 막의 주된 골격을 구성하는 화합물을 가리키는 한편, 용어 "반응물"은 전구체가 아니고, 전구체를 활성화시키고, 전구체를 개조하거나, 전구체의 반응을 촉진하는 화합물을 가리키며, 용어 "비활성 가스"는 전구체 또는 반응물 가스가 아니며, 비-여기된 상태에 있을 때 불활성 또는 비활성인 가스를 가리키나, 여기된 상태에 있을 때 활성 또는 반응성일 수 있다. 일부 실시예들에서, 비활성 가스는 반응물이 아니고 불활성 가스들(noble gases)을 포함한다.
[25] 위에서, 용어 "연속적으로"는 실시예들에 따라 공간 내에서 방해 없이(예를 들어 기판 상에서의 방해 없는 공급), 흐름의 방해 없이(예를 들어 방해 없는 유입), 및/또는 일정한 속도로(상기 용어가 전술한 것들 모두를 동시에 만족시킬 필요는 없다)를 가리킨다. 일부 실시예들에서, "연속적인" 흐름은 일정한 유속을 가진다(이와는 달리, 흐름이 "연속적"이더라도, 그 유속은 시간에 따라 달라질 수 있다). 일부 실시예들에서, "연속적" 시퀀스에서, 단계들은 보조 단계 또는 맥락에 따라 다른 무시할 수 있는 단계, 예를 들어 밸브 구동을 제외한다면 개재되는 단계 없이 순서대로 "연속적으로" 수행된다. 반응물 가스 및 비활성 가스의 연속적인 투입은 특히 서브대기압 하에서 퍼지 효율 증가에 효과적이다. 연속적인 흐름은 아래에서 설명되는 흐름-통과 시스템(flow-pass system, FPS)을 사용하여 달성될 수 있다. 일부 실시예들에서, 반응 챔버의 압력은 단계들 (i) 내지 (v)을 통틀어 일정하다.
[26] 본 개시에서, 용어 "서브대기압"은 대기 압력(약 101 kPa)보다 낮은 압력을 가리키며, 일반적으로 15 kPa 내지 80 kPa의 범위, 바람직하게는 15 kPa 내지 30 kPa의 범위이다. 서브대기압에서, 아크 방전(arc discharge)이 아닌 글로우 방전이 본 개시에 개시된 조건들 하에서 구현될 수 있다.
[27] 따라서, 기판이 그 상부에 막이 퇴적되는 트렌치 패턴을 가질 때, 트렌치가 예를 들어 10 nm 내지 50 nm의 폭을 갖는 높은 종횡비를 가질 때에도(예를 들어 2 내지 10, 3 내지 5) 트렌치의 측벽 상에 퇴적되는 막의 특성들은 편평한 표면 상에 퇴적되는 막의 특성들만큼 우수할 수 있다.
[28] 일부 실시예들에서, 서브대기압 PEALD는 통상의 또는 임의의 적합한 PEALD 장치를 사용하여 수행되고, 즉 진공 펌프를 사용한 배기 시스템을 연속적으로 구동하는 한편 저압 PEALD 또는 다른 처리의 공정 및 서브대기압 PEALD 또는 다른 처리의 공정이 동일한 반응기 내에서 조합하여 수행될 수 있다. 저압 PEALD 장치가 1 내지 10 mTorr의 공정 압력 하에서 작업 가능한 일부 실시예들에서, 반응 챔버의 압력은 다음 작업들 중 적어도 하나를(바람직하게는 적어도 둘을) 수행함에 의해 15 kPa 내지 80 kPa의 범위 내에서 연속적으로 조절된다: (a) 반응 챔버의 하류(downstream) 및 진공 펌프의 상류(upstream)에 제공되는 스로틀 밸브(throttle valve)를 통해 배기 가스들을 통과시키는 단계, (b) 반응 챔버의 하류 및 진공 펌프의 상류에 제공되는 적어도 하나의 자동 압력 조절기(auto pressure controller, APC)를 통해 상기 가스들을 통과시키는 한편 배기 가스들의 흐름을 감소시키는 단계, (c) 반응 챔버의 하류 및 진공 펌프의 상류로 상기 배기 가스들의 흐름에 대하여 밸러스트 가스(ballast gas)를 공급하는 단계, 및 (d) 진공 펌프의 모터 회전 속도를 감소시키는 단계.
[29] 일부 실시예들에서, 작업 (a)가 수행되며, 스로틀 밸브가 오리피스 개스킷(orifice gasket)이다. 이와는 달리, 스로틀 밸브는 니들 밸브(needle valve)일 수 있다. 일부 실시예들에서, 작업 (b)가 수행되며, 두 개의 APC들이 직렬로 제공된다. 일부 실시예들에서, 작업 (c)가 수행되며, 밸러스트 가스는 두 개의 APC들 사이에 공급되는 질소 가스이다. 일부 실시예들에서, 작업 (d)가 수행되며, 모터의 회전 속도는 모터에 연결된 인버터 소자에 의해 감소된다.
[30] 일부 실시예들에서, RF 파워는 0.707 W/cm2 내지 7.07 W/cm2 (기판의 면적당 와트)의 범위이고, 바람직하게는 1.0 W/cm2 내지 3.0 W/cm2의 범위이다. 일부 실시예들에서, RF 파워는 1 kHz 내지 100 MHz, 바람직하게는 1 MHz 내지 50 MHz의 주파수를 갖는다.
[31] 일부 실시예들에서, 상기 막은 실리콘 또는 금속 산화물, 실리콘 또는 금속 질화물, 실리콘 또는 금속 탄화물, 실리콘 또는 금속 산질화물, 또는 실리콘 또는 금속 탄질화물에 의해 구성된다.
[32] 일부 실시예들에서, 전구체는 HaSibRc, R1 aSibR2 c, HaMeb, 및 R1 aMebR2 c로 구성되는 군으로부터 선택되고, 여기서 R, R1, 및 R2은 (N(CxHy)H)z, (N(CxHy)2)z, (OCxHy)z, 할로겐, OH, 또는 이중 또는 삼중 결합들을 갖는 비고리형(non-cyclic) 또는 고리형(cyclic) CxHy 이고, R1 및 R2는 다르며, a, b, c, x, y, 및 z는 정수들이다. 일부 실시예들에서, 전구체는 비스디메틸아미노실레인(bisdimethylaminosilane) 및 비스디에틸아미노실레인(bisdiethylaminosilane)과 같은 아미노실레인, 디클로로테트라메틸디실레인(dichlorotetramethyldisilane) 및 디메틸디클로로실레인(dimethyldichlorosilane)과 같은 실리콘 할라이드(silicon halide), 및 디비닐디메틸실레인(divinyldimethylsilane) 및 페닐실레인(phenylsilane)과 같은 실리콘 탄화수소를 포함하며, 이들 중 임의의 것들이 단독으로 사용될 수 있고, 또는 이들 중 임의의 둘 또는 그 이상이 임의의 조합으로 사용될 수 있다. 일부 실시예들에서, 실리콘을 대신하여 금속-계 전구체가 사용될 수 있다. 금속으로서, Ti, Zr, 및/또는 Al이 사용될 수 있다. 일부 실시예들에서, 전구체는 제1 전구체 및 제1 전구체와는 다른 제2 전구체로 구성되며, 제1 전구체와 제2 전구체는 PEALD의 사이클을 반복할 때 교대로 사용된다. 일부 실시예들에서, 전구체는 제1 전구체 및 제1 전구체와는 다른 제2 전구체로 구성되며, 단계 (i)은 (ia) 반응 챔버로 상기 제1 전구체를 펄스로 공급하는 단계, 및 이후 (ib) 반응 챔버로 상기 제2 전구체를 펄스로 공급하는 단계를 포함한다. 일부 실시예들에서, 세 개의 다른 전구체들이 사용될 수 있다.
[33] 일부 실시예들에서, 반응물은 산화 가스들(산소, 오존, 이산화탄소, 및/또는 에탄올과 같은), 질화 가스들(암모니아, 질소 및/또는 히드라진과 같은), 및 수소 가스로 구성되는 군으로부터 선택되는 하나 또는 그 이상의 가스들이다.
[34] 일부 실시예들에서, 비활성 가스는 질소 가스 및/또는 불활성 가스이고, 일부 실시예들에서, 비활성 가스는 He, Ar 단독으로, 또는 He 및 Ar의 혼합물이다.
[35] 일부 실시예들에서, 상기 방법은, PEALD의 하나 또는 그 이상의 사이클들 이후에 표면 처리를 수행하는 단계를 더 포함하며, 상기 표면 처리는, (I) 상기 반응 챔버로 상기 비활성 가스를 연속적으로 공급하는 단계; (II) 상기 반응 챔버의 압력을 15 kPa 내지 80 kPa의 범위에서 연속적으로 조절하는 단계; 및 (III) 상기 표면 처리 동안에 전구체가 공급되지 않으며, 상기 평행 판 전극들 중 하나에 글로우 방전을 위한 RF 파워를 펄스로 인가하는 단계를 포함한다. 일부 실시예들에서, 상기 표면 처리는 상기 반응 챔버로 반응물을 연속적으로 공급하는 단계를 더 포함한다. 예를 들어, 상기 표면 처리는 비활성 가스로 구성되거나(반응물 가스 및 전구체를 배제하고), 또는 비활성 가스 및 반응물 가스, 산소, 질소, 질소 및 수소의 조합 중 하나의 조합으로 구성되는(전구체를 배제하고) 가스를 사용하여 수행될 수 있다. 상기 표면 처리는 트렌치의 편평한 표면 상에 뿐만 아니라 측벽 상에도 퇴적되는 막의 습식 식각 속도와 같은 특성들을 더욱 향상시킬 수 있다. 표면 처리가 통상의 표면 처리의 공정 온도보다 예를 들어 대략 100배 더 높은 서브대기압 하에서 수행되기 때문에, 플라즈마 밀도 및 래디칼 밀도는 대략 100배 증가될 수 있고, 이에 따라 현저히 짧은 시간 내에서 막 특성들을 향상시킨다. 위의 서브대기압 표면 처리는 서브대기압 PEALD에 의한 막 형성 이후뿐만 아니라, 저압 PEALD에 의한 막 형성 이후에도 수행될 수 있다.
[36] 일부 실시예들에서, 플라즈마-강화 서브대기압 처리에 의하여 기판 상의 막 표면을 처리하기 위한 방법은 (1) 배기 가능한 반응 챔버 내에서 플라즈마-강화 원자층 퇴적(PEALD)에 의해 5 kPa보다 작은 압력 하에서 축전 결합된 평행 판 전극들 사이에 놓여진 상기 기판 상에 상기 막을 퇴적하되, 상기 평행 판 전극들 사이의 거리는 1 mm 내지 5 mm의 범위인, 상기 막의 퇴적 단계; 및 (2) PEALD의 하나 또는 그 이상의 사이클들 이후에 표면 처리의 사이클을 연속적으로 수행하는 단계로서, 상기 표면 처리는 (i) 상기 반응 챔버에 비활성 가스를 연속적으로 공급하는 단계; (ii) 상기 반응 챔버의 압력을 15 kPa 내지 80 kPa의 범위로 연속적으로 조절하는 단계; 및 (iii) 상기 표면 처리 동안에 전구체가 공급되지 않으며, 상기 평행 판 전극들 중 하나에 글로우 방전을 위한 RF 파워를 펄스로 인가하는 단계를 포함하는, 상기 표면 처리의 사이클을 연속적으로 수행하는 단계를 포함한다.
[37] 일부 실시예들에서, 상기 표면 처리의 상기 사이클은 상기 반응 챔버에 반응물을 연속적으로 공급하는 단계를 더 포함한다. 일부 실시예들에서, 단계 (ii)는 상기 반응 챔버로부터 가스들을 배기하는 진공 펌프를 구동하는 한편, 다음 작업들 중 적어도 하나를 수행하는 단계를 포함한다: (a) 반응 챔버의 하류 및 진공 펌프의 상류에 제공되는 스로틀 밸브를 통해 배기 가스들을 통과시키는 단계, (b) 반응 챔버의 하류 및 진공 펌프의 상류에 제공되는 적어도 하나의 자동 압력 조절기(APC)를 통해 상기 가스들을 통과시키는 한편 배기 가스들의 흐름을 감소시키는 단계, (c) 반응 챔버의 하류 및 진공 펌프의 상류로 상기 배기 가스들의 흐름에 대하여 밸러스트 가스를 공급하는 단계, 및 (d) 진공 펌프의 모터 회전 속도를 감소시키는 단계.
[38] 일부 실시예들은 도면들을 참조하여 설명될 것이다. 그러나, 본 발명은 상기 도면들에 한정되지 않는다.
[39] 도 2는 하나의 전구체를 사용한, 본 발명의 일 실시예에 따른 일 사이클 내의 서브대기압 PEALD의 개략적인 연속적 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다. 도 2에 도시된 시퀀스 내에서, 전구체는 연속적으로 공급되는 캐리어 가스 및 희석 가스(집합적으로 "비활성 가스"로 지칭되는)를 사용하여 펄스로 공급된다("투입"). 이는 흐름-통과 시스템(flow-pass system, FPS)을 사용하여 달성될 수 있고, 캐리어 가스 라인이 전구체 저장소(보틀)를 구비하는 우회 라인을 사용하여 제공되고, 메인 라인 및 우회 라인이 스위치되고, 캐리어 가스만이 반응 챔버로 투입되도록 의도될 때 우회 라인이 폐쇄되는 반면, 캐리어 가스 및 전구체 가스 모두가 반응 챔버로 투입되도록 의도될 때 메인 라인이 폐쇄되고 캐리어 가스가 우회 라인을 통해 흐르고, 전구체 가스와 함께 상기 보틀로부터 밖으로 흐른다. 이러한 방식으로, 캐리어 가스가 반응 챔버 내부로 연속적으로 흐를 수 있고, 메인 라인과 우회 라인을 스위칭함에 의해 펄스들로 전구체 가스를 운반시킬 수 있다. 도 1b는 본 발명의 일 실시예에 따라 흐름-통과 시스템(FPS)을 사용한 전구체 공급 시스템을 도시한다(검은 밸브들은 밸브들이 폐쇄된 것을 가리킨다). 도 1b의 (a)에 도시된 바와 같이, 전구체를 반응 챔버(도시되지 않음)로 투입할 때, 우선 Ar (또는 He)와 같은 캐리어 가스가 밸브들(b, c)을 구비하는 가스 라인을 통해 흐르고, 이후 보틀(저장소)(20)로 들어간다. 캐리어 가스는 보틀(20)로부터 밖으로 흐르는 한편 보틀(20) 내부에 증기압에 대응하는 양으로 전구체 가스를 운반하며, 밸브들(f, e)을 구비하는 가스 라인을 통해 흐르며, 이후 전구체와 함께 반응 챔버로 투입된다. 위에서, 밸브들(a, d)이 폐쇄된다. 도 1b의 (b)에 도시된 것과 같이, 캐리어 가스(불활성 가스)만을 반응 챔버로 투입할 때, 캐리어 가스는 보틀(20)을 우회하는 한편, 캐리어 가스는 밸브(a)를 구비하는 가스 라인을 통해 흐른다. 위에서, 밸브들(b, c, d, e, f)은 폐쇄된다.
[40] 서브대기압 하에서, 퍼지 단계의 효율은 현저히 낮을 수 있다. 그러나, FPS는 서브대기압 하에서 불충분한 퍼지 단계를 보상할 수 있다. 추가적으로, 10 slm 내지 60 slm(일반적으로 20 slm 내지 50 slm)과 같은 극도로 높은 희석 가스의 유속은 퍼지 단계의 효율을 향상시킨다.
[41] 도 2에서, 전구체는 캐리어 가스의 도움으로 제공된다("비활성 가스"). ALD가 자기-제한적 흡착 반응 공정이며, 퇴적되는 전구체 분자들의 수는 반응성 표면 사이트들의 개수에 의해 결정되고, 포화 이후의 전구체 노출에 독립적이며, 전구체의 공급은 반응성 표면 사이트들이 사이클마다 포화되도록 된다. 퇴적을 위한 플라즈마는 퇴적 사이클을 통틀어 연속적으로 흐르는 반응물 가스("반응물")(예를 들어 암모니아 가스) 내에서 인 시츄로 RF 파워("RF")를 펄스로("RF") 인가함에 의해 생성되는 한편, 전구체의 투입 없이 반응 공간으로 비활성 가스가 또한 연속적으로 투입되어, 모노레이어를 형성한다.
[42] 위에서 언급된 바와 같이, 각각의 퇴적 사이클의 각각의 펄스 또는 상은 바람직하게는 자기-제한적이다. 여분의 반응물들이 각각의 상에서 침투 가능한 구조물 표면들을 포화시키도록 공급된다. 표면 포화는 반응물이 모든 가능한 반응성 사이트들(예를 들어 물리적 사이즈 또는 "입체 장해" 제약들이 가해지는)을 차지하는 것을 보장하며, 따라서 훌륭한 스텝 커버리지를 보장한다. 일부 실시예들에서, 완전한 포화가 달성되지 않고, 기판 표면 상에 모노레이어보다 작게 흡착하도록 하나 또는 그 이상의 반응물들의 펄스 시간은 감소될 수 있다. "투입" 이후에, 반응 공간은 퍼지되고("퍼지 1"), 여기서 전구체가 반응 공간으로 투입되지 않는 한편 RF 파워의 인가 없이 비활성 가스 및 반응물 가스가 반응 공간으로 연속적으로 투입되어, 기판의 표면으로부터 비-화학흡착된 전구체 및 여분의 가스를 제거한다. "RF" 이후에, 반응 공간은 퍼지되고("퍼지 2"), 여기서 전구체의 투입 없이, 반응 공간으로 RF 파워의 인가 없이, 비활성 가스와 반응물 가스는 반응 공간으로 연속적으로 투입되어 기판의 표면으로부터 부산물들 및 여분의 가스를 제거한다. 반응물 가스의 연속적 흐름에 기인하여, 또한 반응 공간 내부로 들어가는 비활성 가스의, 그 내부로 전구체가 간헐적으로 또는 펄스들로 들어가는 일정한 흐름으로서, 연속적 흐름에 기인하여, 퍼지 단계는 층의 표면으로부터 여분의 가스 및 부산물들을 빠르게 제거하도록 효율적으로 수행될 수 있고, 이에 따라 다수의 PEALD 사이클들을 효율적으로 연속할 수 있다.
[43] 각각의 사이클을 통틀어, 반응 공간은 서브대기압("압력")에서 조절된다. 예를 들어 서브대기압 PEALD가 저압 PEALD 장치를 사용하는 한편 진공 펌프 또는 배기 시스템을 연속적으로 구동하여 수행될 수 있도록, 압력 조절은 다음과 같이 수행될 수 있다.
[44] 도 7은 본 발명의 일 실시예에서 사용 가능한 유전막을 퇴적하기 위한 서브대기압 PEALD 장치의 개략적인 대표도이다. 서브대기압 PEALD는 반응기(31) 내에서 수행된다. 반응 챔버(31) 내의 압력은 연속적으로 또는 간헐적으로 감지되고 모니터되며, 컨트롤러(40)는 예를 들어 도 8에 도시된 플로우차트 또는 알고리즘에 따라 공정 압력을 조절한다(이는 아래에 설명된다). 공정 압력은 다음 작업들 중 임의의 하나 또는 그 이상에 의해 조절될 수 있다: 작업 (a)는 반응 챔버(31)의 하류 및 진공 펌프(32)의 상류에 제공되는 스로틀 밸브(34)를 통해 배기 가스들을 통과시키는 단계이다. 파이프(c) 내에 제공되는 스로틀 밸브(34)를 통해 배기 가스들을 통과시킬 때, 밸브(35)(파이프들(b, c)이 예를 들어 1.375"의 내경 및 2.16"의 외경을 가지므로, 예를 들어 온-오프 밸브보다는 게이트 밸브)가 폐쇄된다. 스로틀 밸브는 오리피스 개스킷일 수 있다. 파이프(b)를 우회하는 파이프(a)는, 진공 펌프(32)에 의한 진공 힘(진공의 정도)을 감소시키도록 더 큰 압력 손실을 생성하도록, 파이프(b)보다 더 작은, 예를 들어 1/4" 파이프이다. 오리피스 개스킷(34)은 예를 들어 약 0.5 mm의 직경을 갖는 개구부를 갖는다. 스로틀 밸브는 개구부-조절 가능한 밸브인 니들 밸브일 수 있다.
[45] 작업 (b)는 반응 챔버(31)의 하류 및 진공 펌프(32)의 상류에서 파이프(c) 내에 제공되는 적어도 하나의 자동 압력 조절기(APC)(37, 38)를 통해 상기 가스들을 통과시키는 한편 배기 가스들의 흐름을 감소시키는 단계이다. APC(37, 38)을 사용함에 의해, 진공 펌프(32)에 의한 진공 힘(진공의 정도)이 효과적으로 감소될 수 있다.
[46] 작업 (c)는 반응 챔버(31)의 하류 및 진공 펌프(32)의 상류로 상기 배기 가스들의 흐름에 대하여 밸러스트 가스 소스(33)로부터 파이프(d)를 통해 밸러스트 가스를 공급하는 단계이다. 파이프(d) 내에 제공되는 밸브(36)는 예를 들어 밸러스트 가스 흐름을 조절하는 공기-구동되는 밸브이다. 이러한 구성에서, APC(37)가 밸러스트 가스의 역류를 방지하는 체크 밸브로서 기능하도록 파이프(d)는 APC(37) 및 APC(38) 사이에서 파이프(c)에 연결된다. 밸러스트 가스는 예를 들어 질소 가스이고, 유속은 약 10 L/min 내지 약 100 L/min, 일반적으로 약 10 L/min 내지 약 30 L/min이다. 밸러스트 가스를 사용함에 의해, 진공 펌프(32)에 의한 진공 힘(진공의 정도)이 효과적으로 감소될 수 있다.
[47] 작업 (d)는 진공 펌프(32)의 모터의 회전 속도를 감소시키는 단계이다. 작업 (d)가 수행되며, 모터에 연결된 인버터 소자(39)에 의해 회전 속도가 감소된다. 모터의 회전 속도를 조절하도록 전류의 주파수를 변경하는 인버터 소자(39)를 사용함에 의해, 예를 들어 약 6000 L/min의 배기 용량을 갖는 진공 펌프는 약 2000 L/min까지 감소될 수 있다.
[48] 도 8은 본 발명의 일 실시예에 따른 서브대기압 PEALD의 공정 시퀀스를 나타내는 플로우차트이다. 컨트롤러(40)는 알고리즘을 실행하도록 프로그램을 저장한다. 단계(1)에서, 반응 챔버(31)의 압력이 감지되고 모니터된다. 단계(2)에서, 측정된 압력이 미리 설정된 타겟 압력과 비교되고, 측정된 압력이 타겟 압력의 설정 값보다 더 낮은지 결정된다. 만약 측정된 압력이 설정 값보다 더 낮다면, 단계(3)에서, 진공 펌프(32)를 구동하는 한편 선택된 작업들 (a) 내지 (d) 중 하나 또는 그 이상이 수행된다. 단계(4)에서, 이러한 단계(작업 (a))가 미리 선택될 때, 밸브(35)를 폐쇄하는 한편 컨트롤러(40)는 오리피스 개스킷(34)을 통해 통과하도록 배기 가스들을 조절한다. 단계(5)에서 이러한 단계(작업 (b))가 미리 선택될 때, 컨트롤러(40)는 배기 가스들의 흐름을 감소시키도록 APC들(37, 38)을 조절한다. 단계(6)에서, 이러한 단계(작업 (c))가 미리 선택될 때, APC들(37, 38) 사이의 파이프(c) 내에서 밸러스트를 공급하도록 컨트롤러(40)는 밸브(36)를 개방한다. 단계(7)에서, 이러한 단계(작업 (d))가 미리 선택될 때, 컨트롤러(40)는 진공 펌프(32)의 모터의 회전 속도를 감소시킨다.
[49] 일부 실시예들에서, 예를 들어 플라즈마 안정성이 향상될 수 있고 또한 가스 흐름들을 안정화시키기 위한 기간을 제거함에 의해 스루풋(throughput)을 향상시킬 수 있도록, 반응 챔버 내의 압력은 도 1b에 도시된 흐름-통과 시스템(FPS)을 사용하여 실절적으로 일정한 값으로 연속적으로 조절된다. 용어 "실질적으로" 일정한 또는 유사 표현은 중요하지 않은 변동, 타겟 또는 의도된 특성에 본질적으로 영향을 주지 않는 변동, 또는 일부 실시예들에서는 총량 또는 기준 값에 대하여 10%보다 작거나, 5%보다 작거나, 또는 임의의 범위들과 같이 당업자에게 거의 0으로 인식되는 변동을 가리킬 수 있다.
[50] 당업자는 상기 장치가, 다른 곳에서 설명되고 여기서 수행될 수 있는 퇴적 및 반응기 세정 공정들을 유발하도록 프로그래밍되거나 달리 구성되는 하나 또는 그 이상의 컨트롤러(들)(도시되지 않음)을 포함하는 것을 이해할 것이다. 컨트롤러(들)은, 당업자에 의해 이해될 것과도 같이, 다양한 파워 소스들, 가열 시스템들, 펌프들, 로봇들, 및 가스 흐름 컨트롤러들 또는 반응기의 밸브들과 통신된다.
[51] 공정 사이클은 예를 들어 도 1a에 도시된 장치를 포함하는 임의의 적합한 장치를 사용하여 수행될 수 있다. 도 1a는 본 발명의 일부 실시예들에서 사용 가능한, 요구되는 바와 같이 아래에 설명되는 시퀀스들을 수행하도록 프로그래밍된 컨트롤들과 결합한 PEALD 장치의 개략도이다. 이러한 도면에서, 평행한 한 쌍의 도전성 평판 전극들(4, 2)을 제공하고, 반응 챔버(3)의 내부(11)(반응 영역) 내에서 각각 마주 보게 하고, 일 측에 HRF 파워(25)(13.56MHz 또는 27 MHz)를 인가하고, 다른 측(12)을 전기적으로 접지시킴에 의해, 플라즈마가 상기 전극들 사이에서 여기된다. 온도 조절기는 하부 스테이지(2)(하부 전극) 내에 제공되고, 그 위에 놓여진 기판(1)의 온도가 주어진 온도에서 일정하게 유지된다. 상부 전극(4)은 또한 샤워 플레이트로서 기능하며, 반응물 가스(및 불활성 가스) 및 전구체 가스가 가스 라인(21) 및 가스 라인(22) 각각을 통해, 및 샤워 플레이트(4)를 통해 반응 챔버(3) 내부로 도입된다. 추가적으로, 반응 챔버(3) 내에서, 배기 라인(7)을 구비하는 원형 덕트(13)가 제공되고, 이를 통해 반응 챔버(3)의 내부(11) 내의 가스가 배기된다. 추가적으로, 반응 챔버(3) 아래에 배치되는 전달 챔버(5)가 전달 챔버(5)의 내부(16)(전달 영역)를 통해 반응 챔버(3)의 내부(11) 내로 씰 가스를 도입하도록 씰 가스 라인(24)을 사용하여 제공되며, 여기서 반응 영역 및 전달 영역을 분리하기 위한 분리 플레이트(14)가 제공된다(웨이퍼가 전달 챔버(5) 내로 또는 이로부터 전달되는 게이트 밸브가 이러한 도면으로부터 생략된다). 전달 챔버는 또한 배기 라인(6)을 구비하여 제공된다. 일부 실시예들에서, 모든 단계들이 기판을 공기 또는 다른 산소-함유 대기에 노출하지 않고 연속적으로 수행될 수 있도록, 다수-성분 막의 퇴적 및 표면 처리가 동일한 반응 공간 내에서 수행된다. 일부 실시예들에서, 리모트 플라즈마 유닛이 가스를 여기하기 위하여 사용될 수 있다.
[52] 도 1a에 도시된 장치 내에서, 반응 챔버 내부로 흐르는 비활성 가스의 흐름을 증가시키기 위하여, 비활성 가스가 샤워헤드(4)로부터의 가스 흐름에 더하여, 측부 흐름 라인(17)을 통하여 반응 챔버 내부로 또한 도입될 수 있다. 이와는 달리, 샤워헤드를 대신하여, 오직 하나의 측부 흐름 라인이 공정 가스들을 도입하는 데 사용되고, 여기서 샤워 플레이트가 없는 상부 전극이 샤워헤드를 대체할 수 있다.
[53] 일부 실시예들에서, 도 1a에 도시된 장치에서, 도 1b에 도시된 불활성 가스의 흐름 및 전구체 가스의 흐름을 스위칭하는 시스템이(앞서 설명된) 반응 챔버의 압력을 실질적으로 동요시키지 않고 펄스 내에서 전구체 가스를 도입하도록 사용될 수 있다.
[54] 일부 실시예들에서, 듀얼 챔버 반응기(서로 인접하게 배치되는 웨이퍼들을 공정하기 위한 두 개의 섹션들 또는 칸들)이 사용될 수 있고, 반응물 가스 및 불활성 가스가 공유된 라인을 통해 공급될 수 있는 한편, 전구체 가스가 공유되지 않은 라인들을 통해 공급된다.
[55] 일부 실시예들에서, 서브대기압 PEALD 사이클들은 아래의 표 1에 도시된 조건들 하에서 수행될 수 있다.
[56] 표 1(수치들은 대략의 값임)
서브대기압 PEALD를 위한 조건들 | |
기판 온도 | 50 내지 550℃ (바람직하게는 100 내지 400℃) |
전극 갭(기판의 두께는 약 0.7 mm) | 1.0 내지 5.0 mm (바람직하게는 1.0 내지 3.0 mm) |
압력 | 15 내지 80 kPa (바람직하게는 15 내지 50 kPa) |
반응물 가스의 유속(연속적) | 100 내지 3000 sccm (바람직하게는 200 내지 2000 sccm) |
캐리어 가스의 유속(연속적) | 500 내지 5000 sccm (바람직하게는 1000 내지 2000 sccm) |
희석 가스의 유속(연속적) | 0.1 내지 3 slm (바람직하게는 0.2 내지 2 slm) |
전구체의 유속 | 캐리어 가스의 유속에 대응 |
300-mm 웨이퍼를 위한 RF 파워 (13.56 MHz) | 500 내지 5000 W (바람직하게는 1000 내지 2000 W) |
"투입"의 기간 | 0.1 내지 5 초 (바람직하게는 0.1 내지 1 초) |
"퍼지 1"의 기간 | 0.1 내지 5 초 (바람직하게는 0.3 내지 1 초) |
"RF"의 기간 | 0.1 내지 10 초 (바람직하게는 0.5 내지 5 초) |
"퍼지 2"의 기간 | 0.1 내지 1 초 (바람직하게는 0.1 내지 0.5 초) |
일 사이클의 기간 | 0.4 내지 22 초 (바람직하게는 1 내지 12 초) |
사이클당 글로우 속도(nm/min) | 상면 상에서 0.1 내지 2 (바람직하게는 0.3 내지 1) |
[57] 전술한 300-mm 웨이퍼를 위한 RF 파워는 W/cm2(웨이퍼의 단위 면적당 와트)로 변환될 수 있고, 이는 200 mm 또는 450 mm와 같은 다른 직경을 갖는 웨이퍼에 적용될 수 있다.
[58] 일반적으로, 식각될 유전막의 두께는 약 50 nm 내지 약 500 nm의 범위이다(요구되는 막 두께는 어플리케이션 및 막의 목적 등에 따라 적절하게 생각되는 값으로 선택될 수 있다). 유전막은 이중-패터닝(double-patterning)을 위하여 사용될 수 있다.
[59] 일부 실시예들에서, 공정 시퀀스는 도 3에 도시된 바와 같이 설정될 수 있다. 도 3은 두 개의 전구체들을 사용한 본 발명의 일 실시예에 따른 일 사이클 내의 서브대기압 PEALD의 개략적인 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다.
[60] 이러한 실시예에서, 서브대기압 PEALD의 일 사이클은, 반응 공간으로 RF 파워를 인가하지 않고 제1 전구체 가스("제1 전구체")가 전구체를 운반하는 캐리어 가스("비활성 가스")를 통해 반응 공간으로 투입되며, 또한 희석 가스(캐리어 가스와 함께 집합적으로 "비활성 가스"로 지칭되는) 및 반응물 가스("반응물")가 반응 공간으로 투입되어 자기-제한적 흡착을 통해 기판의 표면 상으로 전구체 가스가 화학흡착하는 한편, 공정 압력을 서브대기압에서 연속적으로 조절하는, "투입 1"; 전구체가 반응 공간으로 투입되지 않는 한편 RF 파워의 인가 없이 캐리어 가스, 희석 가스 및 반응물 가스가 반응 공간으로 연속적으로 투입되어, 비-화학흡착된 전구체 가스 및 여분의 가스를 기판 표면으로부터 제거하는 한편, 공정 압력을 연속적으로 조절하는, "퍼지 1"; RF 파워가 반응 공간으로 인가되는 한편, 전구체의 투입 없이 캐리어 가스, 희석 가스 및 반응물 가스가 반응 공간으로 연속적으로 투입되어, 여기된 상태의 반응물 가스와 플라즈마 표면 반응을 통해 유전층을 퇴적하는 한편 공정 압력을 연속적으로 조절하는 "RF 1"; 및 전구체의 투입 없이, 그리고 반응 공간으로 RF 파워의 인가 없이 캐리어 가스, 희석 가스 및 반응물 가스가 연속적으로 투입되어 기판 표면으로부터 부산물들 및 여분의 가스를 제거하는 한편 공정 압력을 연속적으로 조절하는, "퍼지 2"를 포함한다. 위에서, "투입 1", "퍼지 1", "RF 1", 및 "퍼지 2"는 도 2에 도시된 "투입", "퍼지 1", "RF", 및 "퍼지 2"에 각각 실질적으로 대응된다. 서브대기압 PEALD의 일 사이클은 제2 전구체를 위한 유사한 공정들을 더 포함하며, 이는 "투입 1", "퍼지 1", "RF 1", 및 "퍼지 2"에 각각 실질적으로 대응되는 "투입 2", "퍼지 3", "RF 2", 및 "퍼지 4"를 포함한다. 반응 공간 내부로 들어가는 캐리어 가스의, 그 내부로 전구체가 간헐적으로 또는 펄스들로 들어가는 일정한 흐름으로서, 연속적 흐름에 기인하여, 및 일정한 흐름으로서 반응 공간으로 들어가는 희석 가스 및 반응물 가스의 연속적 흐름에 기인하여, 퍼지 단계는 층의 표면으로부터 여분의 가스 및 부산물들을 빠르게 제거하도록 효율적으로 수행될 수 있고, 이에 따라 서브대기압 하에서도 다수의 ALD 사이클들을 효율적으로 연속할 수 있다.
[61] 도 4는 두 개의 전구체들을 사용한 본 발명의 다른 실시예에 따른 일 사이클 내의 서브대기압 PEALD의 개략적인 연속 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다. 이러한 시퀀스에서, "투입 1", "퍼지 1", "RF", 및 "퍼지 3"는 도 2에 도시된 "투입", "퍼지 1", "RF", 및 "퍼지 2"에 각각 실질적으로 대응된다. 추가적으로, 상기 시퀀스는 "퍼지 1" 및 "RF" 사이에 삽입된 제2 전구체("제2 전구체")를 위한 "투입 2" 및 "퍼지 2"를 더 포함한다.
[62] 도 6은 본 발명의 일 실시예에 따른 일 사이클 내의 서브대기압 표면 처리의 개략적인 연속 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다. 서브대기압 표면 처리는 서브대기압 PEALD 또는 저압 PEALD 에 의한 막 퇴적 이후에 수행될 수 있다. 서브대기압 표면 처리는 서브대기압 하에서 높은 플라즈마 밀도에 기인하여 트렌치의 편평한 표면 상에 퇴적된 막의 특성들뿐만 아니라 트렌치의 측벽 상에 퇴적된 막의 특성들을 향상시킬 수 있다. 도 6에서, 상기 시퀀스는 반응 챔버로의 RF 파워의 인가 없이, 그리고 전구체 또는 반응물 가스의 투입 없이(이와는 달리, 다른 실시예에서는 반응물 가스가 투입될 수 있다), 비활성 가스("비활성 가스")가 반응 공간으로 연속적으로 투입되는 한편 본 개시에서 논의된 바와 같이 서브대기압에서 압력("압력")을 연속적으로 조절하는, "가스 충전"; 및 가스 흐름이 안정화될 때까지 공정 조건들이 유지되는 "안정화"; 반응 공간으로 RF 파워가 인가되는 "RF"; 및 반응 공간이 퍼지되는 "퍼지"를 포함한다.
[63] 일부 실시예들에서, 서브대기압 표면 처리는 아래의 표 2에 도시된 조건들 하에서 수행될 수 있다.
[64] 표 2 (수치들은 대략의 값임)
서브대기압 표면 처리를 위한 조건들 | |
기판 온도 | 서브대기압 PEALD에서와 동일 |
압력 | 서브대기압 PEALD에서와 동일 |
비활성 가스 | 서브대기압 PEALD에서와 동일 |
비활성 가스의 유속 (연속적) | 서브대기압 PEALD에서와 동일 |
300-mm 웨이퍼를 위한 RF 파워 (13.56 MHz) | 100 내지 5000 W (바람직하게는 300 내지 3000 W) |
"가스 변경"의 기간 | 1 내지 15 초 (바람직하게는 1 내지 5 초) |
"안정화"의 기간 | 2 내지 15 초 (바람직하게는 2 내지 10 초) |
"RF"의 기간 | 0.1 내지 10 초 (바람직하게는 0.3 내지 5 초) |
"퍼지"의 기간 | 0.1 내지 2 초 (바람직하게는 0.1 내지 1 초) |
[65] 전술한 300-mm 웨이퍼를 위한 RF 파워는 W/cm2(웨이퍼의 단위 면적당 와트)로 변환될 수 있고, 이는 200 mm 또는 450 mm와 같은 다른 직경을 갖는 웨이퍼에 적용될 수 있다.
[66] 도 5는 본 발명의 일 실시예에 따른 일 사이클 내의 서브대기압 PEALD의 개략적인 연속 공정 시퀀스 및 일 사이클 내의 후속적인 서브대기압 표면 처리의 개략적인 공정 시퀀스를 나타내며, 회색 셀은 온(ON) 상태를 대표하는 반면, 흰색 셀은 오프(OFF) 상태를 대표하고, 각각의 셀의 폭이 각각의 공정의 기간을 대표하지는 않는다. 상기 시퀀스에서, 서브대기압 PEALD는 도 2에 도시된 것들에 각각 실질적으로 대응되는 "투입", "퍼지 1", "RF", 및 "퍼지 2"를 포함한다. 위의 사이클을 m회 반복한 이후에(m은 1 내지 1000, 바람직하게는 50 내지 200의 정수), 서브대기압 표면 처리가 초기화되고, 이는 도 6에 도시된 "가스 충전", "안정화", "RF", 및 "퍼지"에 각각 실질적으로 대응되는 "가스 충전", "안정화", "RF", 및 "퍼지 3"을 포함한다. 위의 사이클은 n회 반복될 수 있다(n은 1 내지 1000, 바람직하게는 1 내지 50의 정수). n/m의 비율은 1/1000 내지 1/1, 바람직하게는 1/500 내지 1/2의 범위일 수 있다.
[67] 본 발명은 아래의 실험예들을 참조하여 더 설명된다. 그러나, 실험예들은 본 발명을 한정하도록 의도되지 않는다. 조건들 및/또는 구조들이 특정되지 않는 실험예들에서, 당업자는 통상의 실험의 사실로서 본 개시의 관점에서, 이러한 조건들 및/또는 구조들을 즉각적으로 제공할 수 있다. 또한 특정한 실험예들 내에서 적용되는 수치들은 일부 실시예들에서 적어도 ±50%의 범위에 의해 변경될 수 있고, 수치들은 대략적인 값이다.
[68] 실험예들
[69] 실험예들 1 내지 7
[70] 종횡비 4(25 nm의 폭 및 100 nm의 깊이)를 갖는 트렌치들을 구비하는 Si 기판(300 mm의 직경과 0.7 mm의 두께를 갖는) 상에, 도 2에 도시된 시퀀스를 사용하여 서브대기압 PEALD에 의해 막이 형성되었고, 그 일 사이클은 도 1a에 도시된 PEALD 장치를 사용하여 아래의 표 3(공정 사이클)에 도시된 공통 조건들 하에서, 및 도 1b에 도시된 가스 공급 시스템(FPS)을 사용하여 표 4에 지시된 특정한 조건들 및 시퀀스 하에서 수행되었다.
[71] 표 3 (수치들은 대략의 값임)
공정 사이클을 위한 공통 조건들 | |
캐리어 가스 및 희석 가스 | Ar |
캐리어 가스의 유속(연속적) | 2 slm |
전구체 펄스 | 1 초 |
전구체 투입 펄스 이후의 퍼지 | 2 초 |
RF 파워 펄스 | 1 초 |
RF 파워 펄스 이후의 퍼지 | 1 초 |
[72] 표 4 (수치들은 대략의 값임)
전구체 | 온도 (℃) |
압력 (kPa) |
RF (W) |
갭 (mm) |
반응물 /slm |
희석 (slm) |
|
*1 | 비스디메틸-아미노실레인 | 300 | 0.4 | 100 | 12 | O2/0.1 | 1 |
*2 | 디클로로테트라-메틸디실레인 | 400 | 0.4 | 200 | 12 | NH3/2 | 1 |
*3 | 디비닐디메틸-실레인 | 300 | 0.4 | 100 | 12 | CO2/0.1 | 1 |
4 | 비스디메틸-아미노실레인 | 300 | 50 | 1000 | 5 | O2/0.1 | 30 |
5 | 비스디메틸-아미노실레인 | 300 | 50 | 1000 | 2 | O2/0.1 | 30 |
6 | 디클로로테트라-메틸디실레인 | 400 | 30 | 2000 | 2 | NH3/2 | 50 |
7 | 디비닐디메틸-실레인 | 300 | 50 | 1000 | 2 | CO2/0.1 | 30 |
[73] 표 4에서, "*"을 갖는 실험예 번호들은 비교예들을 가리킨다. 각각의 얻어진 막이 평가되었다. 표 5는 평가의 결과들을 나타낸다.
[74] 표 5 (수치들은 대략의 값임)
GPC (nm/사이클) |
RI | 100:1 DHF 상부 WER (nm/분) |
측벽 커버리지 @AR4 (%) |
100:1 DHF 측부 WER (nm/분) |
측부/상부 WER | 막 | |
*1 | 0.1 | 1.47 | 3.8 | 95 | 4.8 | 1.3 | SiO |
*2 | 0.05 | 1.88 | 1.2 | 95 | 4.8 | 4 | SiN |
*3 | 0.03 | 1.71 | 0.1 | 60 | 0.5 | 5 | SiCO |
4 | 0.11 | 1.45 | 3.2 | 95 | 3.8 | 1.2 | SiO |
5 | 0.11 | 1.46 | 2.9 | 105 | 3.0 | 1.0 | SiO |
6 | 0.05 | 1.96 | 0.8 | 97 | 0.9 | 1.1 | SiN |
7 | 0.04 | 1.78 | 0.1 | 89 | 0.1 | 1.0 | SiCO |
[75] 표 4에서, "GPC"는 사이클당 성장속도를 나타내며, "측벽 커버리지@AR4"는 종횡비 3을 갖는 트렌치의 블랭킷 표면 상에 퇴적된 막의 두께에 대한 측벽 상에 퇴적된 막의 두께의 퍼센트를 나타내고, "RI"는 굴절률을 나타내며, "100:1 DHF 상부/측부 WER"은 100:1 DHF(희석 플루오르화수소)의 용액을 사용한 상부 막/측부 막의 습식 식각율을 나타낸다.
[76] 표 5에 도시된 바와 같이, 여기 개시된 서브대기압 PEALD에 따르면, 타겟 막들은 저압 PEALD에 의해 퇴적된 것과 같이 퇴적될 수 있다. 더욱이, 서브대기압 PEALD에 의해 퇴적된 막은, 막의 종류에 무관하게(실험예들 4 내지 7) 우수한 콘포말리티(일반적으로 약 90% 또는 이상) 및 트렌치 내에서 막 특성들의 우수한 균일성(일반적으로 1.2 또는 이하의 측부/상부 WER의 비율)을 가졌다. 특히 SiN 또는 SiCO에 의해 구성되는 막들을 퇴적할 때 측벽에서의 낮은 플라즈마 밀도는 저압 PEALD에서의 문제였고, 이는 측벽 및 상부 표면에 퇴적된 막들의 불균일한 특성들을 유발하나(실험예들 2 및 3), 서브대기압 PEALD에 의하여 우수한 균일성을 갖는 막들이 퇴적되었다(실험예들 6 및 7). 추가적으로, 서브대기압 PEALD에서, 전극들 사이의 갭이 약 2 mm만큼 작았을 때(실험예 5), 갭이 약 5 mm였을 때(실험예 4)와 비교하여 더욱 높은 막 특성들의 균일성이 얻어졌다.
[77] 참조 실험예들
[78] 참조 실험예들에서, 서브대기압 하에서 플라즈마의 점화는, 비활성 가스(희석 가스), 비활성 가스 유속, 산소 유속, 및 공정 압력을 제외하고는 위의 실험예 5에서 사용된 조건들 하에서 조사되었다. 결과들이 도 9에 도시된다. 도 9는 반응물 가스 내의 산소 농도를 달리할 때 0.5 kPa 내지 30 kPa의 압력에서 플라즈마의 점화를 위하여 요구되는 최소 RF 파워를 나타내고, (a)는 반응물 가스가 He를 함유할 때를 나타내며 (b)는 반응물 가스가 Ar를 함유할 때를 나타낸다. 도 9에 도시된 것과 같이, Ar과 비교하여 He이 비활성 가스로서 사용되었을 때, 플라즈마는 더 낮은 RF 파워에서 더욱 안정적으로 점화되었고, 여기서 산소 농도가 4% 및 7%일 때(일반적으로 1% 이상, 그러나 10% 이하), 플라즈마가 서브대기압 하에서도 500 W의 RF 파워에 의해 안정적으로 점화되었고, 산소 농도가 10%였을 때, 플라즈마는 1000 W의 RF 파워에 의해 안정적으로 점화되었다. 그러나, 산소 농도가 0%였을 때(일반적으로 1% 또는 이하), He 및 Ar 모두 500 W의 RF 파워에서 플라즈마를 점화할 수 있었다. 따라서, 서브대기압 PEALD에서 높은 산소 농도(일반적으로 1% 또는 이상)가 요구될 때, He를 비활성 가스로 사용함에 의해 플라즈마가 안정적으로 점화될 수 있다.
[79] 본 발명의 사상을 벗어나지 않고 다수의 다양한 변경들이 만들어질 수 있음이 당업자들에게 이해될 것이다. 그러므로 본 발명의 형태들이 오직 도시적인 것이며 본 발명의 범위를 한정하도록 의도되지 않음이 명백히 이해되어야 한다.
Claims (20)
- 서브대기압 원자층 퇴적(subatmospheric-pressure atomic layer deposition)에 의해 막을 퇴적하기 위한 방법으로서,
배기 가능한 반응 챔버 내에서 축전 결합된(capacitively coupled) 평행 판 전극들 사이에 기판을 놓되, 상기 평행 판 전극들 사이의 거리는 1 mm 내지 5 mm의 범위인, 상기 기판을 놓는 단계; 및
상기 기판 상에 플라즈마-강화 원자층 퇴적(plasma-enhanced atomic layer deposition, PEALD)에 의해 요구되는 두께를 갖는 막을 퇴적하는 단계로서, 상기 PEALD의 각각의 사이클은,
(i) 상기 반응 챔버에 전구체를 펄스로 공급하는 단계;
(ii) 상기 반응 챔버에 반응물을 연속적으로 공급하는 단계;
(iii) 상기 반응 챔버에 비활성 가스를 연속적으로 공급하는 단계;
(iv) 상기 반응 챔버의 압력을 15 kPa 내지 80 kPa의 범위로 연속적으로 조절하는 단계; 및
(v) 상기 평행 판 전극들 중 하나에 글로우 방전(glow discharge)을 위한 RF 파워를 펄스로 인가하되, 상기 전구체 공급의 펄스 및 상기 RF 파워 인가의 펄스가 중첩되지 않는, 상기 RF 파워를 펄스로 인가하는 단계;를 포함하는, 상기 막을 퇴적하는 단계를 포함하는 방법. - 청구항 1에 있어서,
상기 단계 (iv)는 가스들을 상기 반응 챔버로부터 배기하는 진공 펌프를 구동하는 한편 다음의 작업들,
(a) 상기 반응 챔버의 하류 및 상기 진공 펌프의 상류에 제공되는 스로틀 밸브(throttle valve)를 통해 배기 가스들을 통과시키는 단계,
(b) 상기 반응 챔버의 하류 및 상기 진공 펌프의 상류에 제공되는 적어도 하나의 자동 압력 컨트롤러(APC)를 통해 상기 가스들을 통과시키는 한편 상기 배기 가스들의 흐름을 감소시키는 단계,
(c) 상기 반응 챔버의 하류 및 상기 진공 펌프의 상류의 배기 가스들의 흐름에 밸러스트 가스(ballast gas)를 공급하는 단계, 및
(d) 상기 진공 펌프의 모터의 회전 속도를 감소시키는 단계,
중 적어도 하나를 수행하는 단계를 포함하는 것을 특징으로 하는 방법. - 청구항 2에 있어서,
상기 작업 (d)가 수행되며 상기 스로틀 밸브가 오리피스 개스킷(orifice gasket)인 것을 특징으로 하는 방법. - 청구항 2에 있어서,
상기 작업 (b)가 수행되며 두 개의 APC들이 직렬로 제공되는 것을 특징으로 하는 방법. - 청구항 4에 있어서,
상기 작업 (c)가 더 수행되고, 상기 밸러스트 가스는 상기 두 개의 APC들 사이에 공급되는 질소 가스인 것을 특징으로 하는 방법. - 청구항 2에 있어서,
상기 작업 (d)가 수행되며 상기 모터에 연결된 인버터 소자에 의해 상기 모터의 상기 회전 속도가 감소되는 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 RF 파워는 0.707 W/cm2 내지 7.07 W/cm2의 범위인 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 반응 챔버의 상기 압력은 단계들 (i) 내지 (v)를 통틀어 일정한 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 기판은 트렌치 패턴을 구비하고, 상기 트렌치 패턴 상에 상기 막이 퇴적되는 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 막은 실리콘 또는 금속 산화물, 실리콘 또는 금속 질화물, 실리콘 또는 금속 탄화물, 실리콘 또는 금속 산질화물, 또는 실리콘 또는 금속 탄질화물에 의해 구성되는 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 전구체는 HaSibRc, R1 aSibR2 c, HaMeb, 및 R1 aMebR2 c으로 구성되는 군으로부터 선택되고,
R, R1, 및 R2은 (N(CxHy)H)z, (N(CxHy)2)z, (OCxHy)z, 할로겐, OH, 또는 이중 또는 삼중 결합들을 갖는 비고리형 또는 고리형 CxHy이며, R1 과 R2는 다르며, a, b, c, x, y, 및 z는 정수들인 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 전구체는 제1 전구체와, 상기 제1 전구체와는 다른 제2 전구체에 의해 구성되며, 상기 제1 전구체 및 상기 제2 전구체는 PEALD의 상기 사이클을 반복할 때 교대로 사용되는 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 전구체는 제1 전구체와, 상기 제1 전구체와는 다른 제2 전구체에 의해 구성되며, 상기 단계 (i)은,
(ia) 상기 반응 챔버에 상기 제1 전구체를 펄스로 공급하는 단계, 및 이후
(ib) 상기 반응 챔버에 상기 제2 전구체를 펄스로 공급하는 단계를 포함하는 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 반응물은 산화 가스들, 질화 가스들 및 수소 가스로 구성되는 군으로부터 선택되는 하나 또는 그 이상의 가스들인 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 비활성 가스는 단독으로 He, Ar, 또는 He 및 Ar의 혼합물인 것을 특징으로 하는 방법. - 청구항 1에 있어서,
상기 PEALD의 하나 또는 그 이상의 사이클들 이후에 표면 처리를 수행하되, 상기 표면 처리는,
상기 반응 챔버로 상기 비활성 가스를 연속적으로 공급하는 단계;
상기 반응 챔버의 상기 압력을 15 kPa 내지 80 kPa의 범위에서 연속적으로 조절하는 단계; 및
상기 평행 판 전극들 중 상기 하나에 글로우 방전을 위한 RF 파워를 펄스로 인가하는 단계를 포함하는, 상기 표면 처리를 수행하는 단계를 더 포함하고,
상기 표면 처리 동안 전구체가 공급되지 않는 것을 특징으로 하는 방법. - 청구항 16에 있어서,
상기 표면 처리는 상기 반응 챔버로 반응물을 연속적으로 공급하는 단계를 더 포함하는 것을 특징으로 하는 방법. - 플라즈마-강화 서브대기압 처리에 의해 기판 상의 막의 표면을 처리하기 위한 방법으로서,
배기 가능한 반응 챔버 내에서 축전 결합된 평행 판 전극들 사이에 놓여진 상기 기판 상에 5 kPa보다 작은 압력 하에서 플라즈마-강화 원자층 퇴적(PEALD)에 의해 상기 막을 퇴적하되, 상기 평행 판 전극들 사이의 거리는 1 mm 내지 5 mm의 범위인, 상기 막을 퇴적하는 단계; 및
PEALD의 하나 또는 그 이상의 사이클들 이후에, 표면 처리의 사이클을 연속적으로 수행하되, 상기 사이클은,
(i) 상기 반응 챔버에 비활성 가스를 연속적으로 공급하는 단계;
(ii) 상기 반응 챔버의 압력을 15 kPa 내지 80 kPa의 범위로 연속적으로 조절하는 단계; 및
(iii) 상기 평행 판 전극들 중 하나에 글로우 방전을 위한 RF 파워를 펄스로 인가하는 단계를 포함하며,
상기 표면 처리 동안 전구체가 공급되지 않는, 상기 표면 처리의 사이클을 연속적으로 수행하는 단계;를 포함하는 방법. - 청구항 18에 있어서,
상기 표면 처리의 상기 사이클은 상기 반응 챔버에 반응물을 연속적으로 공급하는 단계를 더 포함하는 것을 특징으로 하는 방법. - 청구항 18에 있어서,
상기 단계 (ii)는 가스들을 상기 반응 챔버로부터 배기하는 진공 펌프를 구동하는 한편 다음의 작업들,
(a) 상기 반응 챔버의 하류 및 상기 진공 펌프의 상류에 제공되는 스로틀 밸브를 통해 배기 가스들을 통과시키는 단계,
(b) 상기 반응 챔버의 하류 및 상기 진공 펌프의 상류에 제공되는 적어도 하나의 자동 압력 컨트롤러(APC)를 통해 상기 가스들을 통과시키는 한편 상기 배기 가스들의 흐름을 감소시키는 단계,
(c) 상기 반응 챔버의 하류 및 상기 진공 펌프의 상류의 배기 가스들의 흐름에 밸러스트 가스를 공급하는 단계, 및
(d) 상기 진공 펌프의 모터의 회전 속도를 감소시키는 단계,
중 적어도 하나를 수행하는 단계를 포함하는 것을 특징으로 하는 방법.
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Families Citing this family (295)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) * | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10312055B2 (en) * | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
WO2019103610A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
KR102657269B1 (ko) | 2018-02-14 | 2024-04-16 | 에이에스엠 아이피 홀딩 비.브이. | 주기적 증착 공정에 의해 기판 상에 루테늄-함유 막을 증착하는 방법 |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TWI811348B (zh) | 2018-05-08 | 2023-08-11 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
KR20190129718A (ko) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
KR20210024462A (ko) | 2018-06-27 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체 |
CN112292477A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10755922B2 (en) * | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) * | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
KR102601581B1 (ko) * | 2018-10-31 | 2023-11-14 | 삼성전자주식회사 | 플라즈마 챔버의 가스 공급 장치 및 이를 적용한 플라즈마 처리 장치 |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 가스 감지기를 포함하는 기상 반응기 시스템 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) * | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP2021097227A (ja) | 2019-12-17 | 2021-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化バナジウム層および窒化バナジウム層を含む構造体を形成する方法 |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (zh) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於生長磷摻雜矽層之方法及其系統 |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
JP2021172884A (ja) | 2020-04-24 | 2021-11-01 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202219628A (zh) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於光微影之結構與方法 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
TW202212623A (zh) | 2020-08-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
KR20220076343A (ko) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
US20220270865A1 (en) * | 2021-02-25 | 2022-08-25 | Kurt J. Lesker Company | Pressure-Induced Temperature Modification During Atomic Scale Processing |
KR20220130026A (ko) * | 2021-03-17 | 2022-09-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
KR20230014059A (ko) * | 2021-07-20 | 2023-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 카바이드 층을 포함한 구조체를 형성하는 방법 |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
CN115537781A (zh) * | 2022-10-27 | 2022-12-30 | 上海埃延半导体有限公司 | 一种弥漫层流反应腔体及控制方法 |
Family Cites Families (2461)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3089507A (en) | 1963-05-14 | Air eject system control valve | ||
US2059480A (en) | 1933-09-20 | 1936-11-03 | John A Obermaier | Thermocouple |
US2161626A (en) | 1937-09-25 | 1939-06-06 | Walworth Patents Inc | Locking device |
US2266416A (en) | 1939-01-14 | 1941-12-16 | Western Electric Co | Control apparatus |
US2280778A (en) | 1939-09-29 | 1942-04-28 | John C Andersen | Garden tool |
US2410420A (en) | 1944-01-01 | 1946-11-05 | Robert B Bennett | Scraper |
US2563931A (en) | 1946-04-02 | 1951-08-14 | Honeywell Regulator Co | Rate responsive thermocouple |
US2660061A (en) | 1949-03-05 | 1953-11-24 | Dominion Eng Works Ltd | Immersion type thermocouple temperature measuring device |
US2745640A (en) | 1953-09-24 | 1956-05-15 | American Viscose Corp | Heat exchanging apparatus |
GB752277A (en) | 1953-10-28 | 1956-07-11 | Canadian Ind 1954 Ltd | Improved thermocouple unit |
US3094396A (en) | 1959-07-07 | 1963-06-18 | Continental Can Co | Method of and apparatus for curing internal coatings on can bodies |
US2990045A (en) | 1959-09-18 | 1961-06-27 | Lipe Rollway Corp | Thermally responsive transmission for automobile fan |
US3038951A (en) | 1961-01-19 | 1962-06-12 | Leeds & Northrup Co | Fast acting totally expendable immersion thermocouple |
US3232437A (en) | 1963-03-13 | 1966-02-01 | Champlon Lab Inc | Spin-on filter cartridge |
US3410349A (en) | 1964-01-02 | 1968-11-12 | Ted R. Troutman | Tubing scraper and method |
US3263502A (en) | 1964-01-21 | 1966-08-02 | Redwood L Springfield | Multiple thermocouple support |
FR1408266A (fr) | 1964-06-30 | 1965-08-13 | Realisations Electr Et Electro | Prise de raccordement pour thermocouples |
US3588192A (en) | 1969-06-02 | 1971-06-28 | Trw Inc | Hydraulic skid control system |
US3647387A (en) | 1970-03-19 | 1972-03-07 | Stanford Research Inst | Detection device |
US3647716A (en) | 1970-04-03 | 1972-03-07 | Westvaco Corp | Transport reactor with a venturi tube connection to a combustion chamber for producing activated carbon |
US4393013A (en) | 1970-05-20 | 1983-07-12 | J. C. Schumacher Company | Vapor mass flow control system |
US3713899A (en) | 1970-11-12 | 1973-01-30 | Ford Motor Co | Thermocouple probe |
US3885504A (en) | 1971-01-09 | 1975-05-27 | Max Baermann | Magnetic stabilizing or suspension system |
US3718429A (en) | 1971-03-15 | 1973-02-27 | Du Pont | No-no2 analyzer |
CA1002299A (en) | 1971-06-24 | 1976-12-28 | William H. Trembley | Installation tool |
US3833492A (en) | 1971-09-22 | 1974-09-03 | Pollution Control Ind Inc | Method of producing ozone |
US3862397A (en) | 1972-03-24 | 1975-01-21 | Applied Materials Tech | Cool wall radiantly heated reactor |
FR2181175A5 (ko) | 1972-04-20 | 1973-11-30 | Commissariat Energie Atomique | |
JPS5132766B2 (ko) | 1972-07-25 | 1976-09-14 | ||
JPS5539903B2 (ko) | 1972-10-19 | 1980-10-14 | ||
DE7242602U (ko) | 1972-11-20 | 1976-04-29 | Hoogovens Ijmuiden B.V., Ijmuiden (Niederlande) | |
DE2427992A1 (de) | 1973-06-13 | 1975-03-13 | Thermal Syndicate Ltd | Verfahren zum messen hoher temperaturen mit thermoelementen |
US3854443A (en) | 1973-12-19 | 1974-12-17 | Intel Corp | Gas reactor for depositing thin films |
DE2407133B2 (de) | 1974-02-15 | 1976-12-09 | Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn | Verfahren und vorrichtung zur bestimmung von stickoxid |
US3904371A (en) | 1974-03-04 | 1975-09-09 | Beckman Instruments Inc | Chemiluminescent ammonia detection |
US3997638A (en) | 1974-09-18 | 1976-12-14 | Celanese Corporation | Production of metal ion containing carbon fibers useful in electron shielding applications |
US3887790A (en) | 1974-10-07 | 1975-06-03 | Vernon H Ferguson | Wrap-around electric resistance heater |
SE393967B (sv) | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
US4054071A (en) | 1975-06-17 | 1977-10-18 | Aetna-Standard Engineering Company | Flying saw with movable work shifter |
DE2610556C2 (de) | 1976-03-12 | 1978-02-02 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum Verteilen strömender Medien über einen Strömungsquerschnitt |
USD249341S (en) | 1976-11-11 | 1978-09-12 | Umc Industries, Inc. | Electro-mechanical pulser |
US4194536A (en) | 1976-12-09 | 1980-03-25 | Eaton Corporation | Composite tubing product |
US4181330A (en) | 1977-03-22 | 1980-01-01 | Noriatsu Kojima | Horn shaped multi-inlet pipe fitting |
US4164959A (en) | 1977-04-15 | 1979-08-21 | The Salk Institute For Biological Studies | Metering valve |
US4176630A (en) | 1977-06-01 | 1979-12-04 | Dynair Limited | Automatic control valves |
US4126027A (en) | 1977-06-03 | 1978-11-21 | Westinghouse Electric Corp. | Method and apparatus for eccentricity correction in a rolling mill |
US4145699A (en) | 1977-12-07 | 1979-03-20 | Bell Telephone Laboratories, Incorporated | Superconducting junctions utilizing a binary semiconductor barrier |
US4217463A (en) | 1978-03-13 | 1980-08-12 | National Distillers And Chemical Corporation | Fast responsive, high pressure thermocouple |
US4234449A (en) | 1979-05-30 | 1980-11-18 | The United States Of America As Represented By The United States Department Of Energy | Method of handling radioactive alkali metal waste |
US4389973A (en) | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
US4322592A (en) | 1980-08-22 | 1982-03-30 | Rca Corporation | Susceptor for heating semiconductor substrates |
US4355912A (en) | 1980-09-12 | 1982-10-26 | Haak Raymond L | Spring loaded sensor fitting |
US4479831A (en) | 1980-09-15 | 1984-10-30 | Burroughs Corporation | Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment |
US4333735A (en) | 1981-03-16 | 1982-06-08 | Exxon Research & Engineering Co. | Process and apparatus for measuring gaseous fixed nitrogen species |
US4466766A (en) | 1981-05-20 | 1984-08-21 | Ruska Instrument Corporation | Transfer apparatus |
JPS5819462A (ja) | 1981-07-24 | 1983-02-04 | Kawasaki Steel Corp | 電縫溶接鋼管 |
US4436674A (en) | 1981-07-30 | 1984-03-13 | J.C. Schumacher Co. | Vapor mass flow control system |
US4414492A (en) | 1982-02-02 | 1983-11-08 | Intent Patent A.G. | Electronic ballast system |
FR2529714A1 (fr) | 1982-07-01 | 1984-01-06 | Commissariat Energie Atomique | Procede de realisation de l'oxyde de champ d'un circuit integre |
US4401507A (en) | 1982-07-14 | 1983-08-30 | Advanced Semiconductor Materials/Am. | Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions |
US4454370A (en) | 1982-09-07 | 1984-06-12 | Wahl Instruments, Inc. | Thermocouple surface probe |
US4444990A (en) | 1982-09-08 | 1984-04-24 | Servo Corporation Of America | Heat sensing device |
JPS5945900U (ja) | 1982-09-17 | 1984-03-27 | 住友電気工業株式会社 | 高周波誘導プラズマ用ト−チ |
US4512113A (en) | 1982-09-23 | 1985-04-23 | Budinger William D | Workpiece holder for polishing operation |
US4499354A (en) | 1982-10-06 | 1985-02-12 | General Instrument Corp. | Susceptor for radiant absorption heater system |
US4570328A (en) | 1983-03-07 | 1986-02-18 | Motorola, Inc. | Method of producing titanium nitride MOS device gate electrode |
JPS59211779A (ja) | 1983-05-14 | 1984-11-30 | Toshiba Corp | 圧縮機 |
US4537001A (en) | 1983-05-23 | 1985-08-27 | Uppstroem Leif R | Building elements |
US4548688A (en) | 1983-05-23 | 1985-10-22 | Fusion Semiconductor Systems | Hardening of photoresist |
JPS6050923A (ja) | 1983-08-31 | 1985-03-22 | Hitachi Ltd | プラズマ表面処理方法 |
USD288556S (en) | 1984-02-21 | 1987-03-03 | Pace, Incorporated | Ornamental design for a frame of circuit elements utilized to replace damaged elements on printed circuit boards |
US4735259A (en) | 1984-02-21 | 1988-04-05 | Hewlett-Packard Company | Heated transfer line for capillary tubing |
US5259881A (en) | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
US4527005A (en) | 1984-03-13 | 1985-07-02 | The United States Of America As Represented By The United States Department Of Energy | Spring loaded thermocouple module |
US4724272A (en) | 1984-04-17 | 1988-02-09 | Rockwell International Corporation | Method of controlling pyrolysis temperature |
US4575636A (en) | 1984-04-30 | 1986-03-11 | Rca Corporation | Deep ultraviolet (DUV) flood exposure system |
US4611966A (en) | 1984-05-30 | 1986-09-16 | Johnson Lester R | Apparatus for transferring semiconductor wafers |
US4590326A (en) | 1984-06-14 | 1986-05-20 | Texaco Inc. | Multi-element thermocouple |
JPS6138863A (ja) | 1984-07-30 | 1986-02-24 | Toshiba Corp | 研磨装置 |
US4579378A (en) | 1984-10-31 | 1986-04-01 | Snyders Robert V | Mortar joint pointing guide |
JPH0752718B2 (ja) | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | 薄膜形成方法 |
US4620998A (en) | 1985-02-05 | 1986-11-04 | Haresh Lalvani | Crescent-shaped polygonal tiles |
US4653541A (en) | 1985-06-26 | 1987-03-31 | Parker Hannifin Corporation | Dual wall safety tube |
US4789294A (en) | 1985-08-30 | 1988-12-06 | Canon Kabushiki Kaisha | Wafer handling apparatus and method |
US4664769A (en) | 1985-10-28 | 1987-05-12 | International Business Machines Corporation | Photoelectric enhanced plasma glow discharge system and method including radiation means |
JPH0651909B2 (ja) | 1985-12-28 | 1994-07-06 | キヤノン株式会社 | 薄膜多層構造の形成方法 |
KR940000915B1 (ko) | 1986-01-31 | 1994-02-04 | 가부시기가이샤 히다찌세이사꾸쇼 | 표면 처리방법 |
US4654226A (en) | 1986-03-03 | 1987-03-31 | The University Of Delaware | Apparatus and method for photochemical vapor deposition |
US4722298A (en) | 1986-05-19 | 1988-02-02 | Machine Technology, Inc. | Modular processing apparatus for processing semiconductor wafers |
US4718637A (en) | 1986-07-02 | 1988-01-12 | Mdc Vacuum Products Corporation | High vacuum gate valve having improved metal vacuum joint |
US4681134A (en) | 1986-07-23 | 1987-07-21 | Paris Sr Raymond L | Valve lock |
US5183511A (en) | 1986-07-23 | 1993-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Photo CVD apparatus with a glow discharge system |
US4721533A (en) | 1986-08-01 | 1988-01-26 | System Planning Corporation | Protective structure for an immersion pyrometer |
US4749416A (en) | 1986-08-01 | 1988-06-07 | System Planning Corporation | Immersion pyrometer with protective structure for sidewall use |
US4882199A (en) | 1986-08-15 | 1989-11-21 | Massachusetts Institute Of Technology | Method of forming a metal coating on a substrate |
USD311126S (en) | 1986-12-23 | 1990-10-09 | Joseph Crowley | Shelf extending mounting bracket for additional product display |
US4753856A (en) | 1987-01-02 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from silicate esters and metal oxides |
US4753192A (en) | 1987-01-08 | 1988-06-28 | Btu Engineering Corporation | Movable core fast cool-down furnace |
US4976996A (en) | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
US4821674A (en) | 1987-03-31 | 1989-04-18 | Deboer Wiebe B | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
US5198034A (en) | 1987-03-31 | 1993-03-30 | Epsilon Technology, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
US4827430A (en) | 1987-05-11 | 1989-05-02 | Baxter International Inc. | Flow measurement system |
US4780169A (en) | 1987-05-11 | 1988-10-25 | Tegal Corporation | Non-uniform gas inlet for dry etching apparatus |
US5221556A (en) | 1987-06-24 | 1993-06-22 | Epsilon Technology, Inc. | Gas injectors for reaction chambers in CVD systems |
NO161941C (no) | 1987-06-25 | 1991-04-30 | Kvaerner Eng | Fremgangsmaate ved og anlegg for transport av hydrokarboner over lang avstand fra en hydrokarbonkilde til havs. |
US4837113A (en) | 1987-07-16 | 1989-06-06 | Texas Instruments Incorporated | Method for depositing compound from group II-VI |
US5062386A (en) | 1987-07-27 | 1991-11-05 | Epitaxy Systems, Inc. | Induction heated pancake epitaxial reactor |
USD327534S (en) | 1987-07-30 | 1992-06-30 | CLM Investments, Inc. | Floor drain strainer |
US4854263B1 (en) | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
JPH0777211B2 (ja) | 1987-08-19 | 1995-08-16 | 富士通株式会社 | アッシング方法 |
US4756794A (en) | 1987-08-31 | 1988-07-12 | The United States Of America As Represented By The Secretary Of The Navy | Atomic layer etching |
US4854266A (en) | 1987-11-02 | 1989-08-08 | Btu Engineering Corporation | Cross-flow diffusion furnace |
US4916091A (en) | 1987-11-05 | 1990-04-10 | Texas Instruments Incorporated | Plasma and plasma UV deposition of SiO2 |
JPH0648217B2 (ja) | 1987-12-24 | 1994-06-22 | 川惣電機工業株式会社 | 溶融金属の連続測温装置 |
US4830515A (en) | 1987-12-28 | 1989-05-16 | Omega Engineering, Inc. | Mounting clip for a thermocouple assembly |
US5028366A (en) | 1988-01-12 | 1991-07-02 | Air Products And Chemicals, Inc. | Water based mold release compositions for making molded polyurethane foam |
FR2628985B1 (fr) | 1988-03-22 | 1990-12-28 | Labo Electronique Physique | Reacteur d'epitaxie a paroi protegee contre les depots |
US4978567A (en) | 1988-03-31 | 1990-12-18 | Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. | Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same |
JP2859632B2 (ja) | 1988-04-14 | 1999-02-17 | キヤノン株式会社 | 成膜装置及び成膜方法 |
US4857382A (en) | 1988-04-26 | 1989-08-15 | General Electric Company | Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides |
US4949848A (en) | 1988-04-29 | 1990-08-21 | Fluoroware, Inc. | Wafer carrier |
JPH01296613A (ja) | 1988-05-25 | 1989-11-30 | Nec Corp | 3−v族化合物半導体の気相成長方法 |
US5178682A (en) | 1988-06-21 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin layer on a semiconductor substrate and apparatus therefor |
IT1227708B (it) | 1988-07-29 | 1991-05-06 | Pomini Farrel Spa | Dispositivo di rilevamento della temperatura del materiale contenuto entro un apparecchio chiuso. |
US5158128A (en) | 1988-09-01 | 1992-10-27 | Sumitec, Inc. | Thermocouple for a continuous casting machine |
US4986215A (en) | 1988-09-01 | 1991-01-22 | Kyushu Electronic Metal Co., Ltd. | Susceptor for vapor-phase growth system |
JPH0293071A (ja) | 1988-09-29 | 1990-04-03 | Toshiba Corp | 薄膜の形成方法 |
JP2918892B2 (ja) | 1988-10-14 | 1999-07-12 | 株式会社日立製作所 | プラズマエッチング処理方法 |
US4837185A (en) | 1988-10-26 | 1989-06-06 | Intel Corporation | Pulsed dual radio frequency CVD process |
US5119760A (en) | 1988-12-27 | 1992-06-09 | Symetrix Corporation | Methods and apparatus for material deposition |
JPH02185038A (ja) | 1989-01-11 | 1990-07-19 | Nec Corp | 熱処理装置 |
JPH0834187B2 (ja) | 1989-01-13 | 1996-03-29 | 東芝セラミックス株式会社 | サセプタ |
US4934831A (en) | 1989-03-20 | 1990-06-19 | Claud S. Gordon Company | Temperature sensing device |
US5194401A (en) | 1989-04-18 | 1993-03-16 | Applied Materials, Inc. | Thermally processing semiconductor wafers at non-ambient pressures |
DE69033711T2 (de) | 1989-04-25 | 2001-06-28 | Matsushita Electronics Corp | Verfahren zur Herstellung eines bipolaren Transistors |
US5192717A (en) | 1989-04-28 | 1993-03-09 | Canon Kabushiki Kaisha | Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method |
US5360269A (en) | 1989-05-10 | 1994-11-01 | Tokyo Kogyo Kabushiki Kaisha | Immersion-type temperature measuring apparatus using thermocouple |
US4987856A (en) | 1989-05-22 | 1991-01-29 | Advanced Semiconductor Materials America, Inc. | High throughput multi station processor for multiple single wafers |
US5061083A (en) | 1989-06-19 | 1991-10-29 | The United States Of America As Represented By The Department Of Energy | Temperature monitoring device and thermocouple assembly therefor |
JP2890494B2 (ja) | 1989-07-11 | 1999-05-17 | セイコーエプソン株式会社 | プラズマ薄膜の製造方法 |
US5060322A (en) | 1989-07-27 | 1991-10-29 | Delepine Jean C | Shower room and ceiling element, especially for a shower room |
US5013691A (en) | 1989-07-31 | 1991-05-07 | At&T Bell Laboratories | Anisotropic deposition of silicon dioxide |
US5213650A (en) | 1989-08-25 | 1993-05-25 | Applied Materials, Inc. | Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer |
US5057436A (en) | 1989-10-02 | 1991-10-15 | Agmaster, Inc. | Method and apparatus for detecting toxic gases |
US5098865A (en) | 1989-11-02 | 1992-03-24 | Machado Jose R | High step coverage silicon oxide thin films |
JPH03155625A (ja) | 1989-11-14 | 1991-07-03 | Seiko Epson Corp | プラズマcvd膜の製造方法 |
EP0454846B1 (en) | 1989-11-22 | 1996-09-11 | Nippon Steel Corporation | Thermocouple-type temperature sensor and method of measuring temperature of molten steel |
JP2936623B2 (ja) | 1990-02-26 | 1999-08-23 | 日本電気株式会社 | 半導体装置の製造方法 |
LU87693A1 (fr) | 1990-03-07 | 1991-10-08 | Wurth Paul Sa | Sonde de prise d'echantillons gazeux et de mesures thermiques dans un four a cuve |
JPH03277774A (ja) | 1990-03-27 | 1991-12-09 | Semiconductor Energy Lab Co Ltd | 光気相反応装置 |
DE4011933C2 (de) | 1990-04-12 | 1996-11-21 | Balzers Hochvakuum | Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür |
US5243202A (en) | 1990-04-25 | 1993-09-07 | Casio Computer Co., Ltd. | Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type |
US5356672A (en) | 1990-05-09 | 1994-10-18 | Jet Process Corporation | Method for microwave plasma assisted supersonic gas jet deposition of thin films |
CA2016970A1 (en) | 1990-05-16 | 1991-11-16 | Prasad N. Gadgil | Inverted diffusion stagnation point flow reactor for vapor deposition of thin films |
JPH0429313A (ja) | 1990-05-24 | 1992-01-31 | Fujitsu Ltd | 半導体結晶の製造装置 |
US5130003A (en) | 1990-06-14 | 1992-07-14 | Conrad Richard H | method of powering corona discharge in ozone generators |
US5225366A (en) | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
JPH0464025A (ja) | 1990-07-02 | 1992-02-28 | Matsushita Electric Ind Co Ltd | 調理器用温度センサー |
WO1992001828A1 (en) | 1990-07-18 | 1992-02-06 | Sumitomo Electric Industries, Ltd. | Method and device for manufacturing diamond |
KR0176715B1 (ko) | 1990-07-30 | 1999-04-15 | 오가 노리오 | 드라이에칭방법 |
JPH04115531A (ja) | 1990-09-05 | 1992-04-16 | Mitsubishi Electric Corp | 化学気相成長装置 |
US5167716A (en) | 1990-09-28 | 1992-12-01 | Gasonics, Inc. | Method and apparatus for batch processing a semiconductor wafer |
JP2780866B2 (ja) | 1990-10-11 | 1998-07-30 | 大日本スクリーン製造 株式会社 | 光照射加熱基板の温度測定装置 |
TW214599B (ko) | 1990-10-15 | 1993-10-11 | Seiko Epson Corp | |
US5228114A (en) | 1990-10-30 | 1993-07-13 | Tokyo Electron Sagami Limited | Heat-treating apparatus with batch scheme having improved heat controlling capability |
US5071258A (en) | 1991-02-01 | 1991-12-10 | Vesuvius Crucible Company | Thermocouple assembly |
JPH05136218A (ja) | 1991-02-19 | 1993-06-01 | Tokyo Electron Yamanashi Kk | 検査装置 |
JP2740050B2 (ja) | 1991-03-19 | 1998-04-15 | 株式会社東芝 | 溝埋込み配線形成方法 |
JP3323530B2 (ja) | 1991-04-04 | 2002-09-09 | 株式会社日立製作所 | 半導体装置の製造方法 |
US5116018A (en) | 1991-04-12 | 1992-05-26 | Automax, Inc. | Lockout modules |
US5243195A (en) | 1991-04-25 | 1993-09-07 | Nikon Corporation | Projection exposure apparatus having an off-axis alignment system and method of alignment therefor |
US5104514A (en) | 1991-05-16 | 1992-04-14 | The United States Of America As Represented By The Secretary Of The Navy | Protective coating system for aluminum |
JPH0523079A (ja) | 1991-07-19 | 1993-02-02 | Shimano Inc | 釣り竿及びその製造方法 |
US5137286A (en) | 1991-08-23 | 1992-08-11 | General Electric Company | Permanent magnet floating shaft seal |
JP3040212B2 (ja) | 1991-09-05 | 2000-05-15 | 株式会社東芝 | 気相成長装置 |
US5294778A (en) | 1991-09-11 | 1994-03-15 | Lam Research Corporation | CVD platen heater system utilizing concentric electric heating elements |
US5154301A (en) | 1991-09-12 | 1992-10-13 | Fluoroware, Inc. | Wafer carrier |
US5430011A (en) | 1991-09-17 | 1995-07-04 | Sumitomi Electric Industries, Ltd. | Crystal compensated superconducting thin film formed of oxide superconductor material |
JPH05118928A (ja) | 1991-10-25 | 1993-05-14 | Tokyo Electron Ltd | 接触式の温度測定方法 |
JP3140111B2 (ja) | 1991-11-19 | 2001-03-05 | オリンパス光学工業株式会社 | 高倍率顕微鏡対物レンズ |
US5199603A (en) | 1991-11-26 | 1993-04-06 | Prescott Norman F | Delivery system for organometallic compounds |
JPH05171446A (ja) | 1991-12-24 | 1993-07-09 | Furukawa Electric Co Ltd:The | 薄膜形成方法 |
US5414221A (en) | 1991-12-31 | 1995-05-09 | Intel Corporation | Embedded ground plane and shielding structures using sidewall insulators in high frequency circuits having vias |
US5215588A (en) | 1992-01-17 | 1993-06-01 | Amtech Systems, Inc. | Photo-CVD system |
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
JP2506539B2 (ja) | 1992-02-27 | 1996-06-12 | 株式会社ジーティシー | 絶縁膜の形成方法 |
NL9200446A (nl) | 1992-03-10 | 1993-10-01 | Tempress B V | Inrichting voor het behandelen van microschakeling-schijven (wafers). |
US5226383A (en) | 1992-03-12 | 1993-07-13 | Bell Communications Research, Inc. | Gas foil rotating substrate holder |
US5455069A (en) | 1992-06-01 | 1995-10-03 | Motorola, Inc. | Method of improving layer uniformity in a CVD reactor |
DE69320963T2 (de) | 1992-06-22 | 1999-05-12 | Lam Res Corp | Plasmareinigungsverfahren zum entfernen von rückständen in einer plasmabehandlungskammer |
US5534072A (en) | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
JP3148004B2 (ja) | 1992-07-06 | 2001-03-19 | 株式会社東芝 | 光cvd装置及びこれを用いた半導体装置の製造方法 |
US5601641A (en) | 1992-07-21 | 1997-02-11 | Tse Industries, Inc. | Mold release composition with polybutadiene and method of coating a mold core |
US5306666A (en) | 1992-07-24 | 1994-04-26 | Nippon Steel Corporation | Process for forming a thin metal film by chemical vapor deposition |
JPH0653210A (ja) | 1992-07-28 | 1994-02-25 | Nec Corp | 半導体装置 |
KR100304127B1 (ko) | 1992-07-29 | 2001-11-30 | 이노마다 시게오 | 가반식 밀폐 컨테이너를 사용한 전자기판 처리시스템과 그의 장치 |
ATE129361T1 (de) | 1992-08-04 | 1995-11-15 | Ibm | Fertigungsstrasse architektur mit vollautomatisierten und rechnergesteuerten fördereinrichtungen geeignet für abdichtbaren tragbaren unter druck stehenden behältern. |
US5271967A (en) | 1992-08-21 | 1993-12-21 | General Motors Corporation | Method and apparatus for application of thermal spray coatings to engine blocks |
US5326427A (en) | 1992-09-11 | 1994-07-05 | Lsi Logic Corporation | Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation |
US5246218A (en) | 1992-09-25 | 1993-09-21 | Intel Corporation | Apparatus for securing an automatically loaded wafer cassette on a wafer processing equipment |
US6438502B1 (en) | 1992-10-07 | 2002-08-20 | Dallas Semiconductor Corporation | Environmental condition sensor device and method |
JP3093487B2 (ja) | 1992-10-28 | 2000-10-03 | 松下電子工業株式会社 | 半導体装置およびその製造方法 |
US6235858B1 (en) | 1992-10-30 | 2001-05-22 | Ppg Industries Ohio, Inc. | Aminoplast curable film-forming compositions providing films having resistance to acid etching |
JPH06295862A (ja) | 1992-11-20 | 1994-10-21 | Mitsubishi Electric Corp | 化合物半導体製造装置及び有機金属材料容器 |
IT1257434B (it) | 1992-12-04 | 1996-01-17 | Cselt Centro Studi Lab Telecom | Generatore di vapori per impianti di deposizione chimica da fase vapore |
KR100238629B1 (ko) | 1992-12-17 | 2000-01-15 | 히가시 데쓰로 | 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치 |
DE4244189C2 (de) | 1992-12-24 | 1995-06-01 | Busch Dieter & Co Prueftech | Anlegetemperaturfühler |
US5453124A (en) | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
US5444217A (en) | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5421893A (en) | 1993-02-26 | 1995-06-06 | Applied Materials, Inc. | Susceptor drive and wafer displacement mechanism |
JP3265042B2 (ja) | 1993-03-18 | 2002-03-11 | 東京エレクトロン株式会社 | 成膜方法 |
DE4311197A1 (de) | 1993-04-05 | 1994-10-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Verfahren zum Betreiben einer inkohärent strahlenden Lichtquelle |
JPH06310438A (ja) | 1993-04-22 | 1994-11-04 | Mitsubishi Electric Corp | 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置 |
US5404082A (en) | 1993-04-23 | 1995-04-04 | North American Philips Corporation | High frequency inverter with power-line-controlled frequency modulation |
USD353452S (en) | 1993-04-27 | 1994-12-13 | Groenhoff Larry C | Window adapter for portable box fans |
JP2508581B2 (ja) | 1993-05-28 | 1996-06-19 | 日本電気株式会社 | 化学気相成長法 |
US5501740A (en) | 1993-06-04 | 1996-03-26 | Applied Science And Technology, Inc. | Microwave plasma reactor |
US5354580A (en) | 1993-06-08 | 1994-10-11 | Cvd Incorporated | Triangular deposition chamber for a vapor deposition system |
US5616264A (en) | 1993-06-15 | 1997-04-01 | Tokyo Electron Limited | Method and apparatus for controlling temperature in rapid heat treatment system |
JPH0799162A (ja) | 1993-06-21 | 1995-04-11 | Hitachi Ltd | Cvdリアクタ装置 |
ES2126022T3 (es) | 1993-06-28 | 1999-03-16 | Canon Kk | Resistencia generadora de calor que contiene tan0,8, substrato dotado de dicha resistencia generadora de calor, para cabezal por chorros de liquido, cabezal para chorros de liquido dotado de dicho substrato y aparato de chorros de tinta dotado del cabezal para chorros de liquido. |
US5997768A (en) | 1993-06-29 | 1999-12-07 | Ciba Specialty Chemicals Corporation | Pelletization of metal soap powders |
JPH0729836A (ja) | 1993-07-14 | 1995-01-31 | Sony Corp | プラズマシリコンナイトライド膜の形成方法 |
JP3667781B2 (ja) | 1993-07-16 | 2005-07-06 | 株式会社日立製作所 | エンジンシステムの診断装置 |
US5415753A (en) | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
JPH07109576A (ja) | 1993-10-07 | 1995-04-25 | Shinko Seiki Co Ltd | プラズマcvdによる成膜方法 |
US6122036A (en) | 1993-10-21 | 2000-09-19 | Nikon Corporation | Projection exposure apparatus and method |
JP2682403B2 (ja) | 1993-10-29 | 1997-11-26 | 日本電気株式会社 | 半導体装置の製造方法 |
US5413813A (en) | 1993-11-23 | 1995-05-09 | Enichem S.P.A. | CVD of silicon-based ceramic materials on internal surface of a reactor |
JPH07209093A (ja) | 1994-01-20 | 1995-08-11 | Tokyo Electron Ltd | 温度計 |
US5616947A (en) | 1994-02-01 | 1997-04-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having an MIS structure |
US5681779A (en) | 1994-02-04 | 1997-10-28 | Lsi Logic Corporation | Method of doping metal layers for electromigration resistance |
US5589002A (en) | 1994-03-24 | 1996-12-31 | Applied Materials, Inc. | Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing |
US5900103A (en) | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
JP3211548B2 (ja) | 1994-03-30 | 2001-09-25 | ウシオ電機株式会社 | 誘電体バリア放電蛍光ランプ |
JPH07283149A (ja) | 1994-04-04 | 1995-10-27 | Nissin Electric Co Ltd | 薄膜気相成長装置 |
JPH07297271A (ja) | 1994-04-22 | 1995-11-10 | Shinko Electric Co Ltd | 異サイズのウェ−ハカセットを任意に支持可能な支持機構 |
US5431734A (en) | 1994-04-28 | 1995-07-11 | International Business Machines Corporation | Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control |
US6447232B1 (en) | 1994-04-28 | 2002-09-10 | Semitool, Inc. | Semiconductor wafer processing apparatus having improved wafer input/output handling system |
US5531835A (en) | 1994-05-18 | 1996-07-02 | Applied Materials, Inc. | Patterned susceptor to reduce electrostatic force in a CVD chamber |
KR0144956B1 (ko) | 1994-06-10 | 1998-08-17 | 김광호 | 반도체 장치의 배선 구조 및 그 형성방법 |
KR100306527B1 (ko) | 1994-06-15 | 2002-06-26 | 구사마 사부로 | 박막반도체장치의제조방법,박막반도체장치 |
US5423942A (en) | 1994-06-20 | 1995-06-13 | Texas Instruments Incorporated | Method and apparatus for reducing etching erosion in a plasma containment tube |
US5504042A (en) | 1994-06-23 | 1996-04-02 | Texas Instruments Incorporated | Porous dielectric material with improved pore surface properties for electronics applications |
JP2709568B2 (ja) | 1994-06-30 | 1998-02-04 | 日本プレシジョン・サーキッツ株式会社 | ダウンフロー型スピンドライヤ |
US6022414A (en) | 1994-07-18 | 2000-02-08 | Semiconductor Equipment Group, Llc | Single body injector and method for delivering gases to a surface |
US5838029A (en) | 1994-08-22 | 1998-11-17 | Rohm Co., Ltd. | GaN-type light emitting device formed on a silicon substrate |
US5730801A (en) | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
US5669713A (en) | 1994-09-27 | 1997-09-23 | Rosemount Inc. | Calibration of process control temperature transmitter |
JP3632256B2 (ja) | 1994-09-30 | 2005-03-23 | 株式会社デンソー | 窒化シリコン膜を有する半導体装置の製造方法 |
US5514439A (en) | 1994-10-14 | 1996-05-07 | Sibley; Thomas | Wafer support fixtures for rapid thermal processing |
US5576629A (en) | 1994-10-24 | 1996-11-19 | Fourth State Technology, Inc. | Plasma monitoring and control method and system |
JP2845163B2 (ja) | 1994-10-27 | 1999-01-13 | 日本電気株式会社 | プラズマ処理方法及びその装置 |
JPH10508964A (ja) | 1994-11-08 | 1998-09-02 | バーミア、テクノロジーズ、インコーポレーテッド | 料金設定機能を有するオンラインサービス開発ツール |
US6699530B2 (en) | 1995-07-06 | 2004-03-02 | Applied Materials, Inc. | Method for constructing a film on a semiconductor wafer |
US5583736A (en) | 1994-11-17 | 1996-12-10 | The United States Of America As Represented By The Department Of Energy | Micromachined silicon electrostatic chuck |
FI97730C (fi) | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Laitteisto ohutkalvojen valmistamiseksi |
FI97731C (fi) | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Menetelmä ja laite ohutkalvojen valmistamiseksi |
FI100409B (fi) | 1994-11-28 | 1997-11-28 | Asm Int | Menetelmä ja laitteisto ohutkalvojen valmistamiseksi |
US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
JPH08181135A (ja) | 1994-12-22 | 1996-07-12 | Sharp Corp | 半導体装置の製造方法 |
US5716133A (en) | 1995-01-17 | 1998-02-10 | Applied Komatsu Technology, Inc. | Shielded heat sensor for measuring temperature |
JP3151118B2 (ja) | 1995-03-01 | 2001-04-03 | 東京エレクトロン株式会社 | 熱処理装置 |
US5518549A (en) | 1995-04-18 | 1996-05-21 | Memc Electronic Materials, Inc. | Susceptor and baffle therefor |
JP3360098B2 (ja) | 1995-04-20 | 2002-12-24 | 東京エレクトロン株式会社 | 処理装置のシャワーヘッド構造 |
US5852879A (en) | 1995-04-26 | 1998-12-29 | Schumaier; Daniel R. | Moisture sensitive item drying appliance |
SE506163C2 (sv) | 1995-04-27 | 1997-11-17 | Ericsson Telefon Ab L M | Anordning vid ett kiselsubstrat med ett urtag för upptagande av ett element jämte förfarande för framställande av en dylik anordning |
US5761328A (en) | 1995-05-22 | 1998-06-02 | Solberg Creations, Inc. | Computer automated system and method for converting source-documents bearing alphanumeric text relating to survey measurements |
US5708825A (en) | 1995-05-26 | 1998-01-13 | Iconovex Corporation | Automatic summary page creation and hyperlink generation |
US5540898A (en) | 1995-05-26 | 1996-07-30 | Vasogen Inc. | Ozone generator with in-line ozone sensor |
US5663899A (en) | 1995-06-05 | 1997-09-02 | Advanced Micro Devices | Redundant thermocouple |
US5982931A (en) | 1995-06-07 | 1999-11-09 | Ishimaru; Mikio | Apparatus and method for the manipulation of image containing documents |
US6190634B1 (en) | 1995-06-07 | 2001-02-20 | President And Fellows Of Harvard College | Carbide nanomaterials |
US5683517A (en) | 1995-06-07 | 1997-11-04 | Applied Materials, Inc. | Plasma reactor with programmable reactant gas distribution |
JPH08335558A (ja) | 1995-06-08 | 1996-12-17 | Nissin Electric Co Ltd | 薄膜気相成長装置 |
JP3380091B2 (ja) | 1995-06-09 | 2003-02-24 | 株式会社荏原製作所 | 反応ガス噴射ヘッド及び薄膜気相成長装置 |
USD392855S (en) | 1995-06-26 | 1998-03-31 | Pillow Daryl R | Floor protection template for use while spray-painting door frames |
US20020114886A1 (en) | 1995-07-06 | 2002-08-22 | Applied Materials, Inc. | Method of tisin deposition using a chemical vapor deposition process |
TW294820B (en) | 1995-07-10 | 1997-01-01 | Watkins Johnson Co | Gas distribution apparatus |
TW283250B (en) | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
US6093252A (en) | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
NO953217L (no) | 1995-08-16 | 1997-02-17 | Aker Eng As | Metode og innretning ved rörbunter |
US6113702A (en) | 1995-09-01 | 2000-09-05 | Asm America, Inc. | Wafer support system |
JP3504784B2 (ja) | 1995-09-07 | 2004-03-08 | 東京エレクトロン株式会社 | 熱処理方法 |
JPH0989676A (ja) | 1995-09-21 | 1997-04-04 | Casio Comput Co Ltd | 電子体温計 |
US5791782A (en) | 1995-09-21 | 1998-08-11 | Fusion Systems Corporation | Contact temperature probe with unrestrained orientation |
US5997588A (en) | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
TW356554B (en) | 1995-10-23 | 1999-04-21 | Watkins Johnson Co | Gas injection system for semiconductor processing |
US5801104A (en) | 1995-10-24 | 1998-09-01 | Micron Technology, Inc. | Uniform dielectric film deposition on textured surfaces |
US6299404B1 (en) | 1995-10-27 | 2001-10-09 | Brooks Automation Inc. | Substrate transport apparatus with double substrate holders |
KR100201386B1 (ko) | 1995-10-28 | 1999-06-15 | 구본준 | 화학기상증착장비의 반응가스 분사장치 |
IL115931A0 (en) | 1995-11-09 | 1996-01-31 | Oramir Semiconductor Ltd | Laser stripping improvement by modified gas composition |
US5736314A (en) | 1995-11-16 | 1998-04-07 | Microfab Technologies, Inc. | Inline thermo-cycler |
JPH09148322A (ja) | 1995-11-22 | 1997-06-06 | Sharp Corp | シリコン酸化膜の成膜方法及びプラズマcvd成膜装置 |
US5796074A (en) | 1995-11-28 | 1998-08-18 | Applied Materials, Inc. | Wafer heater assembly |
JPH09172055A (ja) | 1995-12-19 | 1997-06-30 | Fujitsu Ltd | 静電チャック及びウエハの吸着方法 |
US5954375A (en) | 1995-12-21 | 1999-09-21 | Edstrom Industries, Inc. | Sanitary fitting having ferrule with grooved undercut |
US5697706A (en) | 1995-12-26 | 1997-12-16 | Chrysler Corporation | Multi-point temperature probe |
KR100267418B1 (ko) | 1995-12-28 | 2000-10-16 | 엔도 마코토 | 플라스마처리방법및플라스마처리장치 |
US5679215A (en) | 1996-01-02 | 1997-10-21 | Lam Research Corporation | Method of in situ cleaning a vacuum plasma processing chamber |
US6017818A (en) | 1996-01-22 | 2000-01-25 | Texas Instruments Incorporated | Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density |
US5632919A (en) | 1996-01-25 | 1997-05-27 | T.G.M., Inc. | Temperature controlled insulation system |
SE9600705D0 (sv) | 1996-02-26 | 1996-02-26 | Abb Research Ltd | A susceptor for a device for epitaxially growing objects and such a device |
US5837320A (en) | 1996-02-27 | 1998-11-17 | The University Of New Mexico | Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands |
US5732744A (en) | 1996-03-08 | 1998-03-31 | Control Systems, Inc. | Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components |
US5656093A (en) | 1996-03-08 | 1997-08-12 | Applied Materials, Inc. | Wafer spacing mask for a substrate support chuck and method of fabricating same |
DE19609678C2 (de) | 1996-03-12 | 2003-04-17 | Infineon Technologies Ag | Speicherzellenanordnung mit streifenförmigen, parallel verlaufenden Gräben und vertikalen MOS-Transistoren und Verfahren zu deren Herstellung |
USD380527S (en) | 1996-03-19 | 1997-07-01 | Cherle Velez | Sink drain shield |
US6106678A (en) | 1996-03-29 | 2000-08-22 | Lam Research Corporation | Method of high density plasma CVD gap-filling |
KR100212132B1 (ko) | 1996-04-24 | 1999-08-02 | 윤종용 | 횡형 확산로의 프로파일 열전대 |
US5819434A (en) | 1996-04-25 | 1998-10-13 | Applied Materials, Inc. | Etch enhancement using an improved gas distribution plate |
US5844683A (en) | 1996-05-22 | 1998-12-01 | Applied Materials, Inc. | Position sensor system for substrate holders |
US5920798A (en) | 1996-05-28 | 1999-07-06 | Matsushita Battery Industrial Co., Ltd. | Method of preparing a semiconductor layer for an optical transforming device |
US6534133B1 (en) | 1996-06-14 | 2003-03-18 | Research Foundation Of State University Of New York | Methodology for in-situ doping of aluminum coatings |
US6342277B1 (en) | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
US5779203A (en) | 1996-06-28 | 1998-07-14 | Edlinger; Erich | Adjustable wafer cassette stand |
US5837058A (en) | 1996-07-12 | 1998-11-17 | Applied Materials, Inc. | High temperature susceptor |
US5846332A (en) | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
EP0818671A3 (en) | 1996-07-12 | 1998-07-08 | Isuzu Ceramics Research Institute Co., Ltd. | A ceramic sheath type thermocouple |
US5993916A (en) | 1996-07-12 | 1999-11-30 | Applied Materials, Inc. | Method for substrate processing with improved throughput and yield |
US5700729A (en) | 1996-07-15 | 1997-12-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Masked-gate MOS S/D implantation |
US5827757A (en) | 1996-07-16 | 1998-10-27 | Direct Radiography Corp. | Fabrication of large area x-ray image capturing element |
JP3122617B2 (ja) | 1996-07-19 | 2001-01-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US5781693A (en) | 1996-07-24 | 1998-07-14 | Applied Materials, Inc. | Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween |
US5724748A (en) | 1996-07-24 | 1998-03-10 | Brooks; Ray G. | Apparatus for packaging contaminant-sensitive articles and resulting package |
US5879128A (en) | 1996-07-24 | 1999-03-09 | Applied Materials, Inc. | Lift pin and support pin apparatus for a processing chamber |
US5987480A (en) | 1996-07-25 | 1999-11-16 | Donohue; Michael | Method and system for delivering documents customized for a particular user over the internet using imbedded dynamic content |
KR0183912B1 (ko) | 1996-08-08 | 1999-05-01 | 김광호 | 다중 반응 챔버에 연결된 펌핑 설비 및 이를 사용하는 방법 |
US5916365A (en) | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
JP3122618B2 (ja) | 1996-08-23 | 2001-01-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US5806980A (en) | 1996-09-11 | 1998-09-15 | Novellus Systems, Inc. | Methods and apparatus for measuring temperatures at high potential |
US5857777A (en) | 1996-09-25 | 1999-01-12 | Claud S. Gordon Company | Smart temperature sensing device |
US6048154A (en) | 1996-10-02 | 2000-04-11 | Applied Materials, Inc. | High vacuum dual stage load lock and method for loading and unloading wafers using a high vacuum dual stage load lock |
US5928389A (en) | 1996-10-21 | 1999-07-27 | Applied Materials, Inc. | Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool |
US6073973A (en) | 1996-10-31 | 2000-06-13 | Stanley Aviation Corporation | Lightweight positive lock coupling |
US6347636B1 (en) | 1996-11-13 | 2002-02-19 | Applied Materials, Inc. | Methods and apparatus for gettering fluorine from chamber material surfaces |
US5855681A (en) | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
JP3740587B2 (ja) | 1996-11-25 | 2006-02-01 | 山里産業株式会社 | 熱電対 |
US5836483A (en) | 1997-02-05 | 1998-11-17 | Aerotech Dental Systems, Inc. | Self-regulating fluid dispensing cap with safety pressure relief valve for dental/medical unit fluid bottles |
US5753835A (en) | 1996-12-12 | 1998-05-19 | Caterpillar Inc. | Receptacle for holding a sensing device |
US6367410B1 (en) | 1996-12-16 | 2002-04-09 | Applied Materials, Inc. | Closed-loop dome thermal control apparatus for a semiconductor wafer processing system |
US5953635A (en) | 1996-12-19 | 1999-09-14 | Intel Corporation | Interlayer dielectric with a composite dielectric stack |
US5984391A (en) | 1997-02-03 | 1999-11-16 | Novellus Systems, Inc. | Microfeature wafer handling apparatus and methods |
US20020174106A1 (en) | 1997-02-10 | 2002-11-21 | Actioneer, Inc. | Method and apparatus for receiving information in response to a request |
US6035101A (en) | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
JP3492135B2 (ja) | 1997-02-13 | 2004-02-03 | 三菱重工業株式会社 | 熱流束計 |
JPH10239165A (ja) | 1997-02-27 | 1998-09-11 | Sony Corp | 基板の温度測定器、基板の温度を測定する方法および基板の加熱方法 |
US6461982B2 (en) | 1997-02-27 | 2002-10-08 | Micron Technology, Inc. | Methods for forming a dielectric film |
US6096267A (en) | 1997-02-28 | 2000-08-01 | Extraction Systems, Inc. | System for detecting base contaminants in air |
US5947718A (en) | 1997-03-07 | 1999-09-07 | Semitool, Inc. | Semiconductor processing furnace |
JP3124506B2 (ja) | 1997-03-14 | 2001-01-15 | 白光株式会社 | ヒータ・センサ複合体 |
US6214122B1 (en) | 1997-03-17 | 2001-04-10 | Motorola, Inc. | Rapid thermal processing susceptor |
JPH10261620A (ja) | 1997-03-19 | 1998-09-29 | Hitachi Ltd | 表面処理装置 |
US6891138B2 (en) | 1997-04-04 | 2005-05-10 | Robert C. Dalton | Electromagnetic susceptors with coatings for artificial dielectric systems and devices |
US5865205A (en) | 1997-04-17 | 1999-02-02 | Applied Materials, Inc. | Dynamic gas flow controller |
JP3752578B2 (ja) | 1997-04-21 | 2006-03-08 | 株式会社フジキン | 流体制御器用加熱装置 |
US6026762A (en) | 1997-04-23 | 2000-02-22 | Applied Materials, Inc. | Apparatus for improved remote microwave plasma source for use with substrate processing systems |
JP3230051B2 (ja) | 1997-05-16 | 2001-11-19 | 東京エレクトロン株式会社 | 乾燥処理方法及びその装置 |
JPH1144799A (ja) | 1997-05-27 | 1999-02-16 | Ushio Inc | 光路分割型紫外線照射装置 |
US5937323A (en) | 1997-06-03 | 1999-08-10 | Applied Materials, Inc. | Sequencing of the recipe steps for the optimal low-k HDP-CVD processing |
US6201999B1 (en) | 1997-06-09 | 2001-03-13 | Applied Materials, Inc. | Method and apparatus for automatically generating schedules for wafer processing within a multichamber semiconductor wafer processing tool |
US6104401A (en) | 1997-06-12 | 2000-08-15 | Netscape Communications Corporation | Link filters |
EP0887632A1 (en) | 1997-06-24 | 1998-12-30 | Isuzu Ceramics Research Institute Co., Ltd. | A ceramic thermocouple for measuring temperature of molten metal |
US5968275A (en) | 1997-06-25 | 1999-10-19 | Lam Research Corporation | Methods and apparatus for passivating a substrate in a plasma reactor |
US6531193B2 (en) | 1997-07-07 | 2003-03-11 | The Penn State Research Foundation | Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications |
US6576064B2 (en) | 1997-07-10 | 2003-06-10 | Sandia Corporation | Support apparatus for semiconductor wafer processing |
US6083321A (en) | 1997-07-11 | 2000-07-04 | Applied Materials, Inc. | Fluid delivery system and method |
US6312525B1 (en) | 1997-07-11 | 2001-11-06 | Applied Materials, Inc. | Modular architecture for semiconductor wafer fabrication equipment |
US6024799A (en) | 1997-07-11 | 2000-02-15 | Applied Materials, Inc. | Chemical vapor deposition manifold |
US5975492A (en) | 1997-07-14 | 1999-11-02 | Brenes; Arthur | Bellows driver slot valve |
US6099596A (en) | 1997-07-23 | 2000-08-08 | Applied Materials, Inc. | Wafer out-of-pocket detection tool |
US6013553A (en) | 1997-07-24 | 2000-01-11 | Texas Instruments Incorporated | Zirconium and/or hafnium oxynitride gate dielectric |
KR100385946B1 (ko) | 1999-12-08 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자 |
US6287965B1 (en) | 1997-07-28 | 2001-09-11 | Samsung Electronics Co, Ltd. | Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor |
US5884640A (en) | 1997-08-07 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for drying substrates |
US20030049372A1 (en) | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
US6321680B2 (en) | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
US7393561B2 (en) | 1997-08-11 | 2008-07-01 | Applied Materials, Inc. | Method and apparatus for layer by layer deposition of thin films |
JP3317209B2 (ja) | 1997-08-12 | 2002-08-26 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US6121158A (en) | 1997-08-13 | 2000-09-19 | Sony Corporation | Method for hardening a photoresist material formed on a substrate |
TW428045B (en) | 1997-08-20 | 2001-04-01 | Air Liquide Electronics Chemic | Plasma cleaning and etching methods using non-global-warming compounds |
US6104011A (en) | 1997-09-04 | 2000-08-15 | Watlow Electric Manufacturing Company | Sheathed thermocouple with internal coiled wires |
AUPO904597A0 (en) | 1997-09-08 | 1997-10-02 | Canon Information Systems Research Australia Pty Ltd | Method for non-linear document conversion and printing |
JP3581537B2 (ja) | 1997-09-24 | 2004-10-27 | 三菱重工業株式会社 | 高周波加熱コイルの設置間隙保持装置 |
US6161500A (en) | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
AU1269499A (en) | 1997-10-07 | 1999-04-27 | Electronics Development Corporation | Transducer assembly with smart connector |
JPH11118615A (ja) | 1997-10-09 | 1999-04-30 | Kakunenryo Cycle Kaihatsu Kiko | 伸縮性を有する被測定物用温度センサ |
US6624064B1 (en) | 1997-10-10 | 2003-09-23 | Applied Materials, Inc. | Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application |
US5908672A (en) | 1997-10-15 | 1999-06-01 | Applied Materials, Inc. | Method and apparatus for depositing a planarized passivation layer |
WO1999023691A2 (en) | 1997-11-03 | 1999-05-14 | Asm America, Inc. | Improved low mass wafer support system |
EP1036407A1 (en) | 1997-11-03 | 2000-09-20 | ASM America, Inc. | Method of processing wafers with low mass support |
EP1029109B1 (en) | 1997-11-03 | 2007-09-26 | ASM America, Inc. | Long life high temperature process chamber |
JP3050193B2 (ja) | 1997-11-12 | 2000-06-12 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US6136211A (en) | 1997-11-12 | 2000-10-24 | Applied Materials, Inc. | Self-cleaning etch process |
GB9724168D0 (en) | 1997-11-14 | 1998-01-14 | Air Prod & Chem | Gas control device and method of supplying gas |
US6068441A (en) | 1997-11-21 | 2000-05-30 | Asm America, Inc. | Substrate transfer system for semiconductor processing equipment |
US6574644B2 (en) | 1997-11-26 | 2003-06-03 | Siemens Corporate Research, Inc | Automatic capturing of hyperlink specifications for multimedia documents |
WO1999028951A2 (en) | 1997-11-28 | 1999-06-10 | Mattson Technology, Inc. | Systems and methods for low contamination, high throughput handling of workpieces for vacuum processing |
US6013920A (en) | 1997-11-28 | 2000-01-11 | Fortrend Engineering Coirporation | Wafer-mapping load post interface having an effector position sensing device |
KR100295043B1 (ko) | 1997-12-03 | 2001-10-19 | 윤종용 | 저유전상수절연막을층간절연막으로사용하는반도체장치의금속막형성방법 |
JPH11319545A (ja) | 1997-12-15 | 1999-11-24 | Canon Inc | プラズマ処理方法及び基体の処理方法 |
US6248168B1 (en) | 1997-12-15 | 2001-06-19 | Tokyo Electron Limited | Spin coating apparatus including aging unit and solvent replacement unit |
JPH11183265A (ja) | 1997-12-16 | 1999-07-09 | Tokyo Yogyo Co Ltd | 熱電対をもつ温度測定器 |
JPH11183264A (ja) | 1997-12-16 | 1999-07-09 | Tokyo Yogyo Co Ltd | 熱電対をもつ温度測定器 |
JPH11195688A (ja) | 1997-12-26 | 1999-07-21 | Mc Electronics Kk | 基板処理装置 |
USD409894S (en) | 1997-12-30 | 1999-05-18 | Mcclurg Ben B | Sheet rock plug |
KR100249391B1 (ko) | 1997-12-30 | 2000-03-15 | 김영환 | 가열장치 |
KR100269328B1 (ko) | 1997-12-31 | 2000-10-16 | 윤종용 | 원자층 증착 공정을 이용하는 도전층 형성방법 |
JP3314151B2 (ja) | 1998-01-05 | 2002-08-12 | 株式会社日立国際電気 | プラズマcvd装置及び半導体装置の製造方法 |
US5970621A (en) | 1998-01-16 | 1999-10-26 | Pri Automation, Inc. | Semiconductor wafer cassette positioning and detection mechanism |
US6091062A (en) | 1998-01-27 | 2000-07-18 | Kinetrix, Inc. | Method and apparatus for temperature control of a semiconductor electrical-test contractor assembly |
US6125789A (en) | 1998-01-30 | 2000-10-03 | Applied Materials, Inc. | Increasing the sensitivity of an in-situ particle monitor |
TWI237305B (en) | 1998-02-04 | 2005-08-01 | Nikon Corp | Exposure apparatus and positioning apparatus of substrate receiving cassette |
TW437017B (en) | 1998-02-05 | 2001-05-28 | Asm Japan Kk | Silicone polymer insulation film on semiconductor substrate and method for formation thereof |
US6383955B1 (en) | 1998-02-05 | 2002-05-07 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
US7354873B2 (en) | 1998-02-05 | 2008-04-08 | Asm Japan K.K. | Method for forming insulation film |
US7582575B2 (en) | 1998-02-05 | 2009-09-01 | Asm Japan K.K. | Method for forming insulation film |
US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6413583B1 (en) | 1998-02-11 | 2002-07-02 | Applied Materials, Inc. | Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound |
US6050506A (en) | 1998-02-13 | 2000-04-18 | Applied Materials, Inc. | Pattern of apertures in a showerhead for chemical vapor deposition |
US6072163A (en) | 1998-03-05 | 2000-06-06 | Fsi International Inc. | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
US7181501B2 (en) | 1998-03-19 | 2007-02-20 | Isochron, Inc. | Remote data acquisition, transmission and analysis system including handheld wireless equipment |
JPH11287715A (ja) | 1998-04-02 | 1999-10-19 | Canon Inc | 熱電対 |
SE9801190D0 (sv) | 1998-04-06 | 1998-04-06 | Abb Research Ltd | A method and a device for epitaxial growth of objects by Chemical Vapour Deposition |
US6015465A (en) | 1998-04-08 | 2000-01-18 | Applied Materials, Inc. | Temperature control system for semiconductor process chamber |
KR100376984B1 (ko) | 1998-04-30 | 2003-07-16 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한미세패턴의형성방법 |
KR100376983B1 (ko) | 1998-04-30 | 2003-08-02 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한미세패턴의형성방법 |
US6060721A (en) | 1998-05-06 | 2000-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Apparatus for detecting correct positioning of a wafer cassette |
US6126848A (en) | 1998-05-06 | 2000-10-03 | International Business Machines Corporation | Indirect endpoint detection by chemical reaction and chemiluminescence |
JP2002515648A (ja) | 1998-05-11 | 2002-05-28 | セミトゥール・インコーポレイテッド | 加熱反応炉の温度制御システム |
US6218288B1 (en) | 1998-05-11 | 2001-04-17 | Micron Technology, Inc. | Multiple step methods for forming conformal layers |
KR100309918B1 (ko) | 1998-05-16 | 2001-12-17 | 윤종용 | 광시야각액정표시장치및그제조방법 |
US6284050B1 (en) | 1998-05-18 | 2001-09-04 | Novellus Systems, Inc. | UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition |
JP3208376B2 (ja) | 1998-05-20 | 2001-09-10 | 株式会社半導体プロセス研究所 | 成膜方法及び半導体装置の製造方法 |
JPH11343571A (ja) | 1998-05-29 | 1999-12-14 | Ngk Insulators Ltd | サセプター |
JPH11354637A (ja) | 1998-06-11 | 1999-12-24 | Oki Electric Ind Co Ltd | 配線の接続構造及び配線の接続部の形成方法 |
US6302964B1 (en) | 1998-06-16 | 2001-10-16 | Applied Materials, Inc. | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6148761A (en) | 1998-06-16 | 2000-11-21 | Applied Materials, Inc. | Dual channel gas distribution plate |
US6086677A (en) | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
JP2963443B1 (ja) | 1998-06-19 | 1999-10-18 | キヤノン販売株式会社 | 半導体装置の製造装置 |
KR20000002833A (ko) | 1998-06-23 | 2000-01-15 | 윤종용 | 반도체 웨이퍼 보트 |
JP3333135B2 (ja) | 1998-06-25 | 2002-10-07 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
JP3472482B2 (ja) | 1998-06-30 | 2003-12-02 | 富士通株式会社 | 半導体装置の製造方法と製造装置 |
US6232248B1 (en) | 1998-07-03 | 2001-05-15 | Tokyo Electron Limited | Single-substrate-heat-processing method for performing reformation and crystallization |
US6182603B1 (en) | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
JP2000040728A (ja) | 1998-07-22 | 2000-02-08 | Nippon Asm Kk | ウェハ搬送機構 |
US20010001384A1 (en) | 1998-07-29 | 2001-05-24 | Takeshi Arai | Silicon epitaxial wafer and production method therefor |
US6344232B1 (en) | 1998-07-30 | 2002-02-05 | The United States Of America As Represented By The Secretary Of The Air Force | Computer controlled temperature and oxygen maintenance for fiber coating CVD |
USD412270S (en) | 1998-08-10 | 1999-07-27 | David Frank Fredrickson | Article lifter |
US6569971B2 (en) | 1998-08-27 | 2003-05-27 | Hyundai Electronics Industries Co., Ltd. | Polymers for photoresist and photoresist compositions using the same |
US6190732B1 (en) | 1998-09-03 | 2001-02-20 | Cvc Products, Inc. | Method and system for dispensing process gas for fabricating a device on a substrate |
US6344084B1 (en) | 1998-09-11 | 2002-02-05 | Japan Science And Technology Corporation | Combinatorial molecular layer epitaxy device |
US6187672B1 (en) | 1998-09-22 | 2001-02-13 | Conexant Systems, Inc. | Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing |
US6257758B1 (en) | 1998-10-09 | 2001-07-10 | Claud S. Gordon Company | Surface temperature sensor |
USD451893S1 (en) | 1998-10-15 | 2001-12-11 | Meto International Gmbh | Arrangement of aluminum foil coils forming an inductor of a resonant frequency identification element |
US6462671B2 (en) | 1998-10-20 | 2002-10-08 | Brendyl Trent Bushner | Remote securities based data reception and order system |
US6454860B2 (en) | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
KR100317238B1 (ko) | 1998-11-03 | 2002-02-19 | 윤종용 | 가열로 온도검출용 스파이크 열전대 소자_ |
US6423613B1 (en) | 1998-11-10 | 2002-07-23 | Micron Technology, Inc. | Low temperature silicon wafer bond process with bulk material bond strength |
JP2000150617A (ja) | 1998-11-17 | 2000-05-30 | Tokyo Electron Ltd | 搬送装置 |
JP3664897B2 (ja) | 1998-11-18 | 2005-06-29 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
DE19956531A1 (de) | 1998-11-27 | 2000-05-31 | Hyundai Electronics Ind | Vernetzer für ein Photoresist und diesen enthaltende Photoresistzusammensetzung |
JP2000174123A (ja) | 1998-12-09 | 2000-06-23 | Nec Corp | 半導体装置及びその製造方法 |
US6310328B1 (en) | 1998-12-10 | 2001-10-30 | Mattson Technologies, Inc. | Rapid thermal processing chamber for processing multiple wafers |
JP2000183346A (ja) | 1998-12-15 | 2000-06-30 | Toshiba Corp | 半導体装置及びその製造方法 |
US6129954A (en) | 1998-12-22 | 2000-10-10 | General Electric Company | Method for thermally spraying crack-free mullite coatings on ceramic-based substrates |
US6607948B1 (en) | 1998-12-24 | 2003-08-19 | Kabushiki Kaisha Toshiba | Method of manufacturing a substrate using an SiGe layer |
US6496819B1 (en) | 1998-12-28 | 2002-12-17 | Oracle Corporation | Rewriting a query in terms of a summary based on functional dependencies and join backs, and based on join derivability |
KR100281094B1 (ko) | 1998-12-30 | 2001-02-01 | 서평원 | 이동 통신 시스템에서 셀 탐색 방법 |
US6137240A (en) | 1998-12-31 | 2000-10-24 | Lumion Corporation | Universal ballast control circuit |
KR100331544B1 (ko) | 1999-01-18 | 2002-04-06 | 윤종용 | 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드 |
US7217325B2 (en) | 1999-01-22 | 2007-05-15 | Semitool, Inc. | System for processing a workpiece |
TW455912B (en) | 1999-01-22 | 2001-09-21 | Sony Corp | Method and apparatus for film deposition |
US6044860A (en) | 1999-02-01 | 2000-04-04 | Spx Corporation | Adjustable lockout device for knife gate valves |
US6374831B1 (en) | 1999-02-04 | 2002-04-23 | Applied Materials, Inc. | Accelerated plasma clean |
US6281141B1 (en) | 1999-02-08 | 2001-08-28 | Steag Rtp Systems, Inc. | Process for forming thin dielectric layers in semiconductor devices |
DE10080457T1 (de) | 1999-02-12 | 2001-04-26 | Gelest Inc | CVD-Abscheidung von Wolframnitrid |
IT1308606B1 (it) | 1999-02-12 | 2002-01-08 | Lpe Spa | Dispositivo per maneggiare substrati mediante un istema autolivellante a depressione in reattori epistassiali ad induzione con suscettore |
US6426125B1 (en) | 1999-03-17 | 2002-07-30 | General Electric Company | Multilayer article and method of making by ARC plasma deposition |
US6250250B1 (en) | 1999-03-18 | 2001-06-26 | Yuri Maishev | Multiple-cell source of uniform plasma |
JP3250154B2 (ja) | 1999-03-31 | 2002-01-28 | 株式会社スーパーシリコン研究所 | 半導体ウエハ製造装置 |
JP3398936B2 (ja) | 1999-04-09 | 2003-04-21 | 日本エー・エス・エム株式会社 | 半導体処理装置 |
US6264467B1 (en) | 1999-04-14 | 2001-07-24 | Applied Materials, Inc. | Micro grooved support surface for reducing substrate wear and slip formation |
US6326597B1 (en) | 1999-04-15 | 2001-12-04 | Applied Materials, Inc. | Temperature control system for process chamber |
JP3965258B2 (ja) | 1999-04-30 | 2007-08-29 | 日本碍子株式会社 | 半導体製造装置用のセラミックス製ガス供給構造 |
KR100347379B1 (ko) | 1999-05-01 | 2002-08-07 | 주식회사 피케이엘 | 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치 |
JP3072989B1 (ja) | 1999-05-14 | 2000-08-07 | 日本エー・エス・エム株式会社 | 半導体基板上に薄膜を形成する成膜装置における成膜方法 |
JP4294791B2 (ja) | 1999-05-17 | 2009-07-15 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置 |
JP2000329447A (ja) | 1999-05-17 | 2000-11-30 | Matsushita Refrig Co Ltd | 冷蔵庫および除霜用ヒーター |
US6119710A (en) | 1999-05-26 | 2000-09-19 | Cyber Instrument Technologies Llc | Method for wide range gas flow system with real time flow measurement and correction |
US6461801B1 (en) | 1999-05-27 | 2002-10-08 | Matrix Integrated Systems, Inc. | Rapid heating and cooling of workpiece chucks |
WO2000074122A1 (fr) | 1999-05-28 | 2000-12-07 | Tokyo Electron Limited | Dispositif de traitement a l'ozone pour systeme de fabrication de semi-conducteurs |
US20020033183A1 (en) | 1999-05-29 | 2002-03-21 | Sheng Sun | Method and apparatus for enhanced chamber cleaning |
JP3668079B2 (ja) | 1999-05-31 | 2005-07-06 | 忠弘 大見 | プラズマプロセス装置 |
US6656281B1 (en) | 1999-06-09 | 2003-12-02 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US6548402B2 (en) | 1999-06-11 | 2003-04-15 | Applied Materials, Inc. | Method of depositing a thick titanium nitride film |
US6555183B2 (en) | 1999-06-11 | 2003-04-29 | Applied Materials, Inc. | Plasma treatment of a titanium nitride film formed by chemical vapor deposition |
US6281098B1 (en) | 1999-06-15 | 2001-08-28 | Midwest Research Institute | Process for Polycrystalline film silicon growth |
US6821571B2 (en) | 1999-06-18 | 2004-11-23 | Applied Materials Inc. | Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers |
FR2795745B1 (fr) | 1999-06-30 | 2001-08-03 | Saint Gobain Vitrage | Procede de depot d'une couche a base de tungstene et/ou de molybdene sur un substrat verrier, ceramique ou vitroceramique, et substrat ainsi revetu |
JP3252835B2 (ja) | 1999-07-02 | 2002-02-04 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
JP2001023955A (ja) | 1999-07-07 | 2001-01-26 | Mitsubishi Electric Corp | プラズマ処理装置 |
JP2001023872A (ja) | 1999-07-09 | 2001-01-26 | Hitachi Ltd | 半導体基板処理装置 |
US6368988B1 (en) | 1999-07-16 | 2002-04-09 | Micron Technology, Inc. | Combined gate cap or digit line and spacer deposition using HDP |
JP3701148B2 (ja) | 1999-07-28 | 2005-09-28 | 株式会社日立製作所 | コンテンツの配信方法 |
EP1077479A1 (en) | 1999-08-17 | 2001-02-21 | Applied Materials, Inc. | Post-deposition treatment to enchance properties of Si-O-C low K film |
KR100557594B1 (ko) | 1999-08-17 | 2006-03-10 | 주식회사 하이닉스반도체 | 노광후 지연 안정성을 갖는 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 함유한 포토레지스트 조성물 |
US6579833B1 (en) | 1999-09-01 | 2003-06-17 | The Board Of Trustees Of The University Of Illinois | Process for converting a metal carbide to carbon by etching in halogens |
JP2001077088A (ja) | 1999-09-02 | 2001-03-23 | Tokyo Electron Ltd | プラズマ処理装置 |
US6429146B2 (en) | 1999-09-02 | 2002-08-06 | Micron Technology, Inc. | Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing |
US6511539B1 (en) | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
US6355153B1 (en) | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
US6293700B1 (en) | 1999-09-24 | 2001-09-25 | Fluke Corporation | Calibrated isothermal assembly for a thermocouple thermometer |
US6420792B1 (en) | 1999-09-24 | 2002-07-16 | Texas Instruments Incorporated | Semiconductor wafer edge marking |
US6740853B1 (en) | 1999-09-29 | 2004-05-25 | Tokyo Electron Limited | Multi-zone resistance heater |
US7010580B1 (en) | 1999-10-08 | 2006-03-07 | Agile Software Corp. | Method and apparatus for exchanging data in a platform independent manner |
WO2001027579A1 (en) | 1999-10-13 | 2001-04-19 | Texaco Development Corporation | Sapphire reinforced thermocouple protection tube |
US6475276B1 (en) | 1999-10-15 | 2002-11-05 | Asm Microchemistry Oy | Production of elemental thin films using a boron-containing reducing agent |
US6203613B1 (en) | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
US6287913B1 (en) | 1999-10-26 | 2001-09-11 | International Business Machines Corporation | Double polysilicon process for providing single chip high performance logic and compact embedded memory structure |
KR20010045418A (ko) | 1999-11-05 | 2001-06-05 | 박종섭 | 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물 |
KR100547248B1 (ko) | 1999-11-12 | 2006-02-01 | 주식회사 하이닉스반도체 | 알루미나를 사용한 반도체 소자의 게이트 절연막 형성방법 |
JP4209057B2 (ja) | 1999-12-01 | 2009-01-14 | 東京エレクトロン株式会社 | セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法 |
KR100369324B1 (ko) | 1999-12-02 | 2003-01-24 | 한국전자통신연구원 | 평면형 마이크로 공동구조 제조 방법 |
FI118804B (fi) | 1999-12-03 | 2008-03-31 | Asm Int | Menetelmä oksidikalvojen kasvattamiseksi |
EP1107512A1 (en) | 1999-12-03 | 2001-06-13 | Sony International (Europe) GmbH | Communication device and software for operating multimedia applications |
JP3810604B2 (ja) | 1999-12-21 | 2006-08-16 | Smc株式会社 | ゲートバルブ |
JP2001176952A (ja) | 1999-12-21 | 2001-06-29 | Toshiba Mach Co Ltd | ウェーハ位置ずれ検出装置 |
WO2001050349A1 (en) | 1999-12-30 | 2001-07-12 | Rutgers, The State University Of New Jersey | Electronic document customization and transformation utilizing user feedback |
US6576062B2 (en) | 2000-01-06 | 2003-06-10 | Tokyo Electron Limited | Film forming apparatus and film forming method |
KR100767762B1 (ko) | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치 |
US6541367B1 (en) | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
TW473792B (en) | 2000-01-20 | 2002-01-21 | Ngk Insulators Ltd | Electrostatic chuck |
JP2001203211A (ja) * | 2000-01-20 | 2001-07-27 | Hitachi Kokusai Electric Inc | 水素アニール処理方法及びその装置 |
JP2001207268A (ja) | 2000-01-27 | 2001-07-31 | Kubota Corp | 成膜装置 |
JP2001207265A (ja) | 2000-01-27 | 2001-07-31 | Kubota Corp | 成膜装置 |
JP4384770B2 (ja) | 2000-01-27 | 2009-12-16 | 株式会社日立国際電気 | 基板処理装置 |
US6475930B1 (en) | 2000-01-31 | 2002-11-05 | Motorola, Inc. | UV cure process and tool for low k film formation |
US6191399B1 (en) | 2000-02-01 | 2001-02-20 | Asm America, Inc. | System of controlling the temperature of a processing chamber |
US6436819B1 (en) | 2000-02-01 | 2002-08-20 | Applied Materials, Inc. | Nitrogen treatment of a metal nitride/metal stack |
JP4174941B2 (ja) | 2000-02-03 | 2008-11-05 | 株式会社デンソー | 薄膜製造方法及び薄膜製造装置 |
TW488010B (en) | 2000-02-04 | 2002-05-21 | Kobe Steel Ltd | Chamber member made of aluminum alloy and heater block |
US6372583B1 (en) | 2000-02-09 | 2002-04-16 | Intel Corporation | Process for making semiconductor device with epitaxially grown source and drain |
US6407435B1 (en) | 2000-02-11 | 2002-06-18 | Sharp Laboratories Of America, Inc. | Multilayer dielectric stack and method |
US20020009119A1 (en) | 2000-02-11 | 2002-01-24 | Matthew William T. | Environmental heat stress monitor |
US6573030B1 (en) | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
KR100520188B1 (ko) | 2000-02-18 | 2005-10-10 | 주식회사 하이닉스반도체 | 부분적으로 가교화된 2층 포토레지스트용 중합체 |
TW476996B (en) | 2000-02-28 | 2002-02-21 | Mitsubishi Material Silicon | Semiconductor manufacturing method and semiconductor manufacturing apparatus |
US6846711B2 (en) | 2000-03-02 | 2005-01-25 | Tokyo Electron Limited | Method of making a metal oxide capacitor, including a barrier film |
AU2001245388A1 (en) | 2000-03-07 | 2001-09-17 | Asm America, Inc. | Graded thin films |
US7419903B2 (en) | 2000-03-07 | 2008-09-02 | Asm International N.V. | Thin films |
JP4054159B2 (ja) | 2000-03-08 | 2008-02-27 | 東京エレクトロン株式会社 | 基板処理方法及びその装置 |
US6917845B2 (en) | 2000-03-10 | 2005-07-12 | Smiths Detection-Pasadena, Inc. | Method for monitoring environmental condition using a mathematical model |
JP2001332609A (ja) | 2000-03-13 | 2001-11-30 | Nikon Corp | 基板保持装置及び露光装置 |
US6913796B2 (en) | 2000-03-20 | 2005-07-05 | Axcelis Technologies, Inc. | Plasma curing process for porous low-k materials |
US6759098B2 (en) | 2000-03-20 | 2004-07-06 | Axcelis Technologies, Inc. | Plasma curing of MSQ-based porous low-k film materials |
US6576300B1 (en) | 2000-03-20 | 2003-06-10 | Dow Corning Corporation | High modulus, low dielectric constant coatings |
US6558755B2 (en) | 2000-03-20 | 2003-05-06 | Dow Corning Corporation | Plasma curing process for porous silica thin film |
US6598559B1 (en) | 2000-03-24 | 2003-07-29 | Applied Materials, Inc. | Temperature controlled chamber |
JP3676983B2 (ja) | 2000-03-29 | 2005-07-27 | 株式会社日立国際電気 | 半導体製造方法、基板処理方法、及び半導体製造装置 |
JP2003529926A (ja) | 2000-03-30 | 2003-10-07 | 東京エレクトロン株式会社 | プラズマ処理システム内への調整可能なガス注入のための方法及び装置 |
JP2001342570A (ja) | 2000-03-30 | 2001-12-14 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および半導体製造装置 |
JP2001345263A (ja) | 2000-03-31 | 2001-12-14 | Nikon Corp | 露光装置及び露光方法、並びにデバイス製造方法 |
ATE342384T1 (de) | 2000-04-06 | 2006-11-15 | Asm Inc | Sperrschicht für glasartige werkstoffe |
FI117979B (fi) | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
US6451713B1 (en) | 2000-04-17 | 2002-09-17 | Mattson Technology, Inc. | UV pretreatment process for ultra-thin oxynitride formation |
US6641350B2 (en) | 2000-04-17 | 2003-11-04 | Hitachi Kokusai Electric Inc. | Dual loading port semiconductor processing equipment |
US6329297B1 (en) | 2000-04-21 | 2001-12-11 | Applied Materials, Inc. | Dilute remote plasma clean |
US6635117B1 (en) | 2000-04-26 | 2003-10-21 | Axcelis Technologies, Inc. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
US7141768B2 (en) | 2000-04-28 | 2006-11-28 | Nexicor, Llc | Fastening device |
US6387207B1 (en) | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
KR100367662B1 (ko) | 2000-05-02 | 2003-01-10 | 주식회사 셈테크놀러지 | 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치 |
DE10021871A1 (de) | 2000-05-05 | 2001-11-15 | Infineon Technologies Ag | Verfahren zum Herstellen einer Barriereschicht in einem elektronischen Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements mit einer Barriereschicht |
US20020078893A1 (en) | 2000-05-18 | 2002-06-27 | Applied Materials , Inc. | Plasma enhanced chemical processing reactor and method |
US6559026B1 (en) | 2000-05-25 | 2003-05-06 | Applied Materials, Inc | Trench fill with HDP-CVD process including coupled high power density plasma deposition |
JP3448737B2 (ja) | 2000-05-25 | 2003-09-22 | 住友重機械工業株式会社 | ウエハーチャック用冷却板及びウエハーチャック |
US6884295B2 (en) | 2000-05-29 | 2005-04-26 | Tokyo Electron Limited | Method of forming oxynitride film or the like and system for carrying out the same |
EP1160838B1 (en) | 2000-05-31 | 2007-12-05 | Tokyo Electron Limited | Heat treatment system and method |
WO2001099166A1 (en) | 2000-06-08 | 2001-12-27 | Genitech Inc. | Thin film forming method |
USD455024S1 (en) | 2000-06-09 | 2002-04-02 | Levenger Company | Portable writing surface |
KR100406173B1 (ko) | 2000-06-13 | 2003-11-19 | 주식회사 하이닉스반도체 | 촉매 분사 수단을 구비한 히터 블록 |
US6863019B2 (en) | 2000-06-13 | 2005-03-08 | Applied Materials, Inc. | Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas |
DE60123366T2 (de) | 2000-06-15 | 2007-08-23 | Koninklijke Philips Electronics N.V. | Halter für eine substratkassette und vorrichtung ausgerüstet mit diesem halter |
US6461435B1 (en) | 2000-06-22 | 2002-10-08 | Applied Materials, Inc. | Showerhead with reduced contact area |
US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
KR100467366B1 (ko) | 2000-06-30 | 2005-01-24 | 주식회사 하이닉스반도체 | 원자층 증착법을 이용한 지르코늄산화막 형성방법 |
KR100546138B1 (ko) | 2000-06-30 | 2006-01-24 | 주식회사 하이닉스반도체 | 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물 |
US6874480B1 (en) | 2000-07-03 | 2005-04-05 | Combustion Dynamics Corp. | Flow meter |
JP3497450B2 (ja) | 2000-07-06 | 2004-02-16 | 東京エレクトロン株式会社 | バッチ式熱処理装置及びその制御方法 |
JP2002164342A (ja) | 2000-07-21 | 2002-06-07 | Canon Sales Co Inc | 半導体装置及びその製造方法 |
AU2001288225A1 (en) | 2000-07-24 | 2002-02-05 | The University Of Maryland College Park | Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation |
US7223676B2 (en) | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
US7166524B2 (en) | 2000-08-11 | 2007-01-23 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
US20020136214A1 (en) | 2000-08-14 | 2002-09-26 | Consumer Direct Link | Pervasive computing network architecture |
JP4048112B2 (ja) | 2000-08-18 | 2008-02-13 | 東京エレクトロン株式会社 | 半導体装置の製造方法および半導体装置 |
US6566278B1 (en) | 2000-08-24 | 2003-05-20 | Applied Materials Inc. | Method for densification of CVD carbon-doped silicon oxide films through UV irradiation |
US6494998B1 (en) | 2000-08-30 | 2002-12-17 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element |
US6878906B2 (en) | 2000-08-30 | 2005-04-12 | Ibiden Co., Ltd. | Ceramic heater for semiconductor manufacturing and inspecting equipment |
US6784108B1 (en) | 2000-08-31 | 2004-08-31 | Micron Technology, Inc. | Gas pulsing for etch profile control |
KR20020019414A (ko) | 2000-09-05 | 2002-03-12 | 엔도 마코토 | 기판 처리 장치 및 기판 처리 장치를 이용한 반도체디바이스 제조 방법 |
JP4232330B2 (ja) | 2000-09-22 | 2009-03-04 | 東京エレクトロン株式会社 | 励起ガス形成装置、処理装置及び処理方法 |
USD449873S1 (en) | 2000-09-22 | 2001-10-30 | James Bronson | Garbage disposal strainer and splash guard |
US6494065B2 (en) | 2000-09-26 | 2002-12-17 | Babbitt Steam Specialty Company | Valve lockout/tag out system |
US6632068B2 (en) | 2000-09-27 | 2003-10-14 | Asm International N.V. | Wafer handling system |
AU146327S (en) | 2000-09-29 | 2001-12-18 | American Standard Int Inc | Faucet |
US6370796B1 (en) | 2000-09-29 | 2002-04-16 | Sony Corporation | Heater block cooling system for wafer processing apparatus |
US6578893B2 (en) | 2000-10-02 | 2003-06-17 | Ajs Automation, Inc. | Apparatus and methods for handling semiconductor wafers |
JP2002110570A (ja) | 2000-10-04 | 2002-04-12 | Asm Japan Kk | 半導体製造装置用ガスラインシステム |
US6745095B1 (en) | 2000-10-04 | 2004-06-01 | Applied Materials, Inc. | Detection of process endpoint through monitoring fluctuation of output data |
US6660660B2 (en) | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
US7204887B2 (en) | 2000-10-16 | 2007-04-17 | Nippon Steel Corporation | Wafer holding, wafer support member, wafer boat and heat treatment furnace |
JP4156788B2 (ja) | 2000-10-23 | 2008-09-24 | 日本碍子株式会社 | 半導体製造装置用サセプター |
FI118014B (fi) | 2000-10-23 | 2007-05-31 | Asm Int | Menetelmä alumiinioksidiohutkalvojen valmistamiseksi matalissa lämpötiloissa |
US6395650B1 (en) | 2000-10-23 | 2002-05-28 | International Business Machines Corporation | Methods for forming metal oxide layers with enhanced purity |
US6688784B1 (en) | 2000-10-25 | 2004-02-10 | Advanced Micro Devices, Inc. | Parallel plate development with multiple holes in top plate for control of developer flow and pressure |
US6824665B2 (en) | 2000-10-25 | 2004-11-30 | Shipley Company, L.L.C. | Seed layer deposition |
US6445574B1 (en) | 2000-10-30 | 2002-09-03 | Motorola, Inc. | Electronic device |
US7032614B2 (en) | 2000-11-03 | 2006-04-25 | Applied Materials, Inc. | Facilities connection box for pre-facilitation of wafer fabrication equipment |
JP2002158178A (ja) | 2000-11-21 | 2002-05-31 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
US6689220B1 (en) | 2000-11-22 | 2004-02-10 | Simplus Systems Corporation | Plasma enhanced pulsed layer deposition |
US6613695B2 (en) | 2000-11-24 | 2003-09-02 | Asm America, Inc. | Surface preparation prior to deposition |
US20020064592A1 (en) | 2000-11-29 | 2002-05-30 | Madhav Datta | Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects |
KR100688484B1 (ko) | 2000-11-30 | 2007-02-28 | 삼성전자주식회사 | 활성화 산소를 이용하여 기판을 처리하는 장치 및 그 방법 |
JP3610900B2 (ja) | 2000-11-30 | 2005-01-19 | 東京エレクトロン株式会社 | 熱処理装置 |
US20020069222A1 (en) | 2000-12-01 | 2002-06-06 | Wiznet, Inc. | System and method for placing active tags in HTML document |
US6913152B2 (en) | 2000-12-04 | 2005-07-05 | Peter Zuk, Jr. | Disposable vacuum filtration apparatus capable of detecting microorganisms and particulates in liquid samples |
KR100886997B1 (ko) | 2000-12-05 | 2009-03-04 | 도쿄엘렉트론가부시키가이샤 | 피처리체의 처리방법 및 처리장치 |
KR100385947B1 (ko) | 2000-12-06 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착 방법에 의한 박막 형성 방법 |
US6878402B2 (en) | 2000-12-06 | 2005-04-12 | Novellus Systems, Inc. | Method and apparatus for improved temperature control in atomic layer deposition |
US6930041B2 (en) | 2000-12-07 | 2005-08-16 | Micron Technology, Inc. | Photo-assisted method for semiconductor fabrication |
US6413321B1 (en) | 2000-12-07 | 2002-07-02 | Applied Materials, Inc. | Method and apparatus for reducing particle contamination on wafer backside during CVD process |
US6576564B2 (en) | 2000-12-07 | 2003-06-10 | Micron Technology, Inc. | Photo-assisted remote plasma apparatus and method |
AU2002221122A1 (en) | 2000-12-12 | 2002-06-24 | Tokyo Electron Limited | Thin film forming method and thin film forming device |
US6814096B2 (en) | 2000-12-15 | 2004-11-09 | Nor-Cal Products, Inc. | Pressure controller and method |
US20020076507A1 (en) | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Process sequence for atomic layer deposition |
US6641673B2 (en) | 2000-12-20 | 2003-11-04 | General Electric Company | Fluid injector for and method of prolonged delivery and distribution of reagents into plasma |
US7015422B2 (en) | 2000-12-21 | 2006-03-21 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US6544906B2 (en) | 2000-12-21 | 2003-04-08 | Texas Instruments Incorporated | Annealing of high-k dielectric materials |
US20020151327A1 (en) | 2000-12-22 | 2002-10-17 | David Levitt | Program selector and guide system and method |
US20020152244A1 (en) | 2000-12-22 | 2002-10-17 | International Business Machines Corporation | Method and apparatus to dynamically create a customized user interface based on a document type definition |
JP5068402B2 (ja) | 2000-12-28 | 2012-11-07 | 公益財団法人国際科学振興財団 | 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法 |
US6398184B1 (en) | 2000-12-29 | 2002-06-04 | General Signal Corporation | Lock device and lock method for knife gate valves |
US7172497B2 (en) | 2001-01-05 | 2007-02-06 | Asm Nutool, Inc. | Fabrication of semiconductor interconnect structures |
JP4633269B2 (ja) | 2001-01-15 | 2011-02-16 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
US6583048B2 (en) | 2001-01-17 | 2003-06-24 | Air Products And Chemicals, Inc. | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
US7087482B2 (en) | 2001-01-19 | 2006-08-08 | Samsung Electronics Co., Ltd. | Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same |
JP4644943B2 (ja) | 2001-01-23 | 2011-03-09 | 東京エレクトロン株式会社 | 処理装置 |
JP4429300B2 (ja) | 2001-01-25 | 2010-03-10 | 東京エレクトロン株式会社 | 電子デバイス材料の製造方法 |
US6660662B2 (en) | 2001-01-26 | 2003-12-09 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
KR20020064028A (ko) | 2001-01-31 | 2002-08-07 | 한빛 세마텍(주) | 펄스형 자외선조사에 의한 세정 및 표면처리 장치 |
US7299202B2 (en) | 2001-02-07 | 2007-11-20 | Exalt Solutions, Inc. | Intelligent multimedia e-catalog |
JP2005033221A (ja) | 2001-02-08 | 2005-02-03 | Tokyo Electron Ltd | 基板載置台および処理装置 |
US6589868B2 (en) | 2001-02-08 | 2003-07-08 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
JP3626933B2 (ja) | 2001-02-08 | 2005-03-09 | 東京エレクトロン株式会社 | 基板載置台の製造方法 |
US20020108670A1 (en) | 2001-02-12 | 2002-08-15 | Baker John Eric | High purity chemical container with external level sensor and removable dip tube |
KR101027485B1 (ko) | 2001-02-12 | 2011-04-06 | 에이에스엠 아메리카, 인코포레이티드 | 반도체 박막 증착을 위한 개선된 공정 |
US7072061B2 (en) | 2001-02-13 | 2006-07-04 | Ariba, Inc. | Method and system for extracting information from RFQ documents and compressing RFQ files into a common RFQ file type |
US6613656B2 (en) | 2001-02-13 | 2003-09-02 | Micron Technology, Inc. | Sequential pulse deposition |
KR100410991B1 (ko) | 2001-02-22 | 2003-12-18 | 삼성전자주식회사 | 반도체 제조장치의 로드포트 |
US6632478B2 (en) | 2001-02-22 | 2003-10-14 | Applied Materials, Inc. | Process for forming a low dielectric constant carbon-containing film |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
JP4487135B2 (ja) | 2001-03-05 | 2010-06-23 | 東京エレクトロン株式会社 | 流体制御装置 |
US7563715B2 (en) | 2005-12-05 | 2009-07-21 | Asm International N.V. | Method of producing thin films |
US6447651B1 (en) | 2001-03-07 | 2002-09-10 | Applied Materials, Inc. | High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers |
US7111232B1 (en) | 2001-03-07 | 2006-09-19 | Thomas Layne Bascom | Method and system for making document objects available to users of a network |
US7186648B1 (en) | 2001-03-13 | 2007-03-06 | Novellus Systems, Inc. | Barrier first method for single damascene trench applications |
US6716571B2 (en) | 2001-03-28 | 2004-04-06 | Advanced Micro Devices, Inc. | Selective photoresist hardening to facilitate lateral trimming |
US6723654B2 (en) | 2001-03-30 | 2004-04-20 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layer |
US6448192B1 (en) | 2001-04-16 | 2002-09-10 | Motorola, Inc. | Method for forming a high dielectric constant material |
US6521295B1 (en) | 2001-04-17 | 2003-02-18 | Pilkington North America, Inc. | Chemical vapor deposition of antimony-doped metal oxide and the coated article made thereby |
US6482331B2 (en) | 2001-04-18 | 2002-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing contamination in a plasma process chamber |
TW538327B (en) | 2001-04-24 | 2003-06-21 | Unit Instr Inc | System and method for a mass flow controller |
US6753507B2 (en) | 2001-04-27 | 2004-06-22 | Kyocera Corporation | Wafer heating apparatus |
US20030019428A1 (en) | 2001-04-28 | 2003-01-30 | Applied Materials, Inc. | Chemical vapor deposition chamber |
US6847014B1 (en) | 2001-04-30 | 2005-01-25 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
US6528430B2 (en) | 2001-05-01 | 2003-03-04 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3 |
US6864041B2 (en) | 2001-05-02 | 2005-03-08 | International Business Machines Corporation | Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching |
US6627268B1 (en) | 2001-05-03 | 2003-09-30 | Novellus Systems, Inc. | Sequential ion, UV, and electron induced chemical vapor deposition |
KR20020086763A (ko) | 2001-05-10 | 2002-11-20 | 주식회사 엘지이아이 | 플라즈마를 이용한 연속중합장치용 열전대 |
US6596653B2 (en) | 2001-05-11 | 2003-07-22 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
JP2002343790A (ja) | 2001-05-21 | 2002-11-29 | Nec Corp | 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法 |
US6528767B2 (en) | 2001-05-22 | 2003-03-04 | Applied Materials, Inc. | Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications |
US7037574B2 (en) | 2001-05-23 | 2006-05-02 | Veeco Instruments, Inc. | Atomic layer deposition for fabricating thin films |
US7159597B2 (en) | 2001-06-01 | 2007-01-09 | Applied Materials, Inc. | Multistep remote plasma clean process |
US6758909B2 (en) | 2001-06-05 | 2004-07-06 | Honeywell International Inc. | Gas port sealing for CVD/CVI furnace hearth plates |
GB0113735D0 (en) | 2001-06-05 | 2001-07-25 | Holset Engineering Co | Mixing fluid streams |
US6472266B1 (en) | 2001-06-18 | 2002-10-29 | Taiwan Semiconductor Manufacturing Company | Method to reduce bit line capacitance in cub drams |
US6391803B1 (en) | 2001-06-20 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6514313B1 (en) | 2001-06-22 | 2003-02-04 | Aeronex, Inc. | Gas purification system and method |
US20030002562A1 (en) | 2001-06-27 | 2003-01-02 | Yerlikaya Y. Denis | Temperature probe adapter |
US6420279B1 (en) | 2001-06-28 | 2002-07-16 | Sharp Laboratories Of America, Inc. | Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate |
US20030003696A1 (en) | 2001-06-29 | 2003-01-02 | Avgerinos Gelatos | Method and apparatus for tuning a plurality of processing chambers |
JP3708031B2 (ja) | 2001-06-29 | 2005-10-19 | 株式会社日立製作所 | プラズマ処理装置および処理方法 |
TW539822B (en) | 2001-07-03 | 2003-07-01 | Asm Inc | Source chemical container assembly |
WO2003007357A1 (fr) | 2001-07-10 | 2003-01-23 | Tokyo Electron Limited | Procede de gravure a sec |
KR100400044B1 (ko) | 2001-07-16 | 2003-09-29 | 삼성전자주식회사 | 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드 |
US20030017268A1 (en) | 2001-07-18 | 2003-01-23 | Applied Materials, Inc. | .method of cvd titanium nitride film deposition for increased titanium nitride film uniformity |
JP3926588B2 (ja) | 2001-07-19 | 2007-06-06 | キヤノンマーケティングジャパン株式会社 | 半導体装置の製造方法 |
US6677254B2 (en) | 2001-07-23 | 2004-01-13 | Applied Materials, Inc. | Processes for making a barrier between a dielectric and a conductor and products produced therefrom |
JP2003035574A (ja) | 2001-07-23 | 2003-02-07 | Mitsubishi Heavy Ind Ltd | 応答型センサ及び応用計測システム |
US20080268635A1 (en) | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
US6638839B2 (en) | 2001-07-26 | 2003-10-28 | The University Of Toledo | Hot-filament chemical vapor deposition chamber and process with multiple gas inlets |
US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US6435865B1 (en) | 2001-07-30 | 2002-08-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for positioning gas injectors in a vertical furnace |
EP1460678A4 (en) | 2001-07-31 | 2010-01-06 | Air Liquide | CLEANING METHOD AND APPARATUS AND METHOD AND APPARATUS FOR ETCHING |
US6678583B2 (en) | 2001-08-06 | 2004-01-13 | Seminet, Inc. | Robotic storage buffer system for substrate carrier pods |
JP3775262B2 (ja) | 2001-08-09 | 2006-05-17 | ヤマハ株式会社 | 電子楽器及び電子楽器システム |
US6531412B2 (en) | 2001-08-10 | 2003-03-11 | International Business Machines Corporation | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications |
TW559905B (en) | 2001-08-10 | 2003-11-01 | Toshiba Corp | Vertical chemical vapor deposition system cross-reference to related applications |
JP2003059999A (ja) | 2001-08-14 | 2003-02-28 | Tokyo Electron Ltd | 処理システム |
US6820570B2 (en) | 2001-08-15 | 2004-11-23 | Nobel Biocare Services Ag | Atomic layer deposition reactor |
US20030035002A1 (en) | 2001-08-15 | 2003-02-20 | Samsung Electronics Co., Ltd. | Alternate interpretation of markup language documents |
JP2003060076A (ja) | 2001-08-21 | 2003-02-28 | Nec Corp | 半導体装置及びその製造方法 |
KR100604751B1 (ko) | 2001-08-24 | 2006-07-26 | 주식회사 하이닉스반도체 | 산 확산 방지용 포토레지스트 공중합체 및 이를 함유하는포토레지스트 조성물 |
JP3832293B2 (ja) | 2001-08-31 | 2006-10-11 | 株式会社ダイフク | 荷保管設備 |
JP3832294B2 (ja) | 2001-08-31 | 2006-10-11 | 株式会社ダイフク | 荷保管設備 |
JP4460803B2 (ja) | 2001-09-05 | 2010-05-12 | パナソニック株式会社 | 基板表面処理方法 |
US6521547B1 (en) | 2001-09-07 | 2003-02-18 | United Microelectronics Corp. | Method of repairing a low dielectric constant material layer |
US9708707B2 (en) | 2001-09-10 | 2017-07-18 | Asm International N.V. | Nanolayer deposition using bias power treatment |
US6756318B2 (en) | 2001-09-10 | 2004-06-29 | Tegal Corporation | Nanolayer thick film processing system and method |
JP4094262B2 (ja) | 2001-09-13 | 2008-06-04 | 住友大阪セメント株式会社 | 吸着固定装置及びその製造方法 |
AU2002333601A1 (en) | 2001-09-14 | 2003-04-01 | Asm America, Inc. | Metal nitride deposition by ald using gettering reactant |
US6756085B2 (en) | 2001-09-14 | 2004-06-29 | Axcelis Technologies, Inc. | Ultraviolet curing processes for advanced low-k materials |
US6541370B1 (en) | 2001-09-17 | 2003-04-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Composite microelectronic dielectric layer with inhibited crack susceptibility |
US20030059535A1 (en) | 2001-09-25 | 2003-03-27 | Lee Luo | Cycling deposition of low temperature films in a cold wall single wafer process chamber |
US6607976B2 (en) | 2001-09-25 | 2003-08-19 | Applied Materials, Inc. | Copper interconnect barrier layer structure and formation method |
US6782305B2 (en) | 2001-10-01 | 2004-08-24 | Massachusetts Institute Of Technology | Method of geometric information sharing and parametric consistency maintenance in a collaborative design environment |
US6960537B2 (en) | 2001-10-02 | 2005-11-01 | Asm America, Inc. | Incorporation of nitrogen into high k dielectric film |
US6720259B2 (en) | 2001-10-02 | 2004-04-13 | Genus, Inc. | Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition |
KR100431658B1 (ko) | 2001-10-05 | 2004-05-17 | 삼성전자주식회사 | 기판 가열 장치 및 이를 갖는 장치 |
US6461436B1 (en) | 2001-10-15 | 2002-10-08 | Micron Technology, Inc. | Apparatus and process of improving atomic layer deposition chamber performance |
US6936183B2 (en) | 2001-10-17 | 2005-08-30 | Applied Materials, Inc. | Etch process for etching microstructures |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US20080102203A1 (en) | 2001-10-26 | 2008-05-01 | Dien-Yeh Wu | Vortex chamber lids for atomic layer deposition |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
JP2003133300A (ja) | 2001-10-26 | 2003-05-09 | Tokyo Electron Ltd | 成膜装置及び成膜方法 |
TW563176B (en) | 2001-10-26 | 2003-11-21 | Applied Materials Inc | Gas delivery apparatus for atomic layer deposition |
WO2003038145A2 (en) | 2001-10-29 | 2003-05-08 | Genus, Inc. | Chemical vapor deposition system |
US20040253867A1 (en) | 2001-11-05 | 2004-12-16 | Shuzo Matsumoto | Circuit part connector structure and gasket |
KR100760291B1 (ko) | 2001-11-08 | 2007-09-19 | 에이에스엠지니텍코리아 주식회사 | 박막 형성 방법 |
US6975921B2 (en) | 2001-11-09 | 2005-12-13 | Asm International Nv | Graphical representation of a wafer processing process |
KR20030039247A (ko) | 2001-11-12 | 2003-05-17 | 주성엔지니어링(주) | 서셉터 |
US20040010772A1 (en) | 2001-11-13 | 2004-01-15 | General Electric Company | Interactive method and system for faciliting the development of computer software applications |
JP2005510082A (ja) | 2001-11-16 | 2005-04-14 | トリコン ホールディングス リミティド | 低k誘電層の形成 |
JP2003153706A (ja) | 2001-11-20 | 2003-05-27 | Toyobo Co Ltd | 面ファスナー雌材及びその製造方法 |
US6926774B2 (en) | 2001-11-21 | 2005-08-09 | Applied Materials, Inc. | Piezoelectric vaporizer |
USD461233S1 (en) | 2001-11-29 | 2002-08-06 | James Michael Whalen | Marine deck drain strainer |
US7017514B1 (en) | 2001-12-03 | 2006-03-28 | Novellus Systems, Inc. | Method and apparatus for plasma optimization in water processing |
US6638879B2 (en) | 2001-12-06 | 2003-10-28 | Macronix International Co., Ltd. | Method for forming nitride spacer by using atomic layer deposition |
KR100446619B1 (ko) | 2001-12-14 | 2004-09-04 | 삼성전자주식회사 | 유도 결합 플라즈마 장치 |
SE0104252D0 (sv) | 2001-12-17 | 2001-12-17 | Sintercast Ab | New device |
US20030116087A1 (en) | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
JP3891267B2 (ja) | 2001-12-25 | 2007-03-14 | キヤノンアネルバ株式会社 | シリコン酸化膜作製方法 |
US6766260B2 (en) | 2002-01-04 | 2004-07-20 | Mks Instruments, Inc. | Mass flow ratio system and method |
CN100373559C (zh) | 2002-01-15 | 2008-03-05 | 东京毅力科创株式会社 | 形成含硅绝缘膜的cvd方法和装置 |
US6580050B1 (en) | 2002-01-16 | 2003-06-17 | Pace, Incorporated | Soldering station with built-in self-calibration function |
JP4071968B2 (ja) | 2002-01-17 | 2008-04-02 | 東芝三菱電機産業システム株式会社 | ガス供給システム及びガス供給方法 |
CN1643179B (zh) | 2002-01-17 | 2010-05-26 | 松德沃技术公司 | Ald装置和方法 |
US6760981B2 (en) | 2002-01-18 | 2004-07-13 | Speedline Technologies, Inc. | Compact convection drying chamber for drying printed circuit boards and other electronic assemblies by enhanced evaporation |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US20030141820A1 (en) | 2002-01-30 | 2003-07-31 | Applied Materials, Inc. | Method and apparatus for substrate processing |
US7115305B2 (en) | 2002-02-01 | 2006-10-03 | California Institute Of Technology | Method of producing regular arrays of nano-scale objects using nano-structured block-copolymeric materials |
KR100377095B1 (en) | 2002-02-01 | 2003-03-20 | Nexo Co Ltd | Semiconductor fabrication apparatus using low energy plasma |
US6732006B2 (en) | 2002-02-06 | 2004-05-04 | Asm International Nv | Method and system to process semiconductor wafers |
US6899507B2 (en) | 2002-02-08 | 2005-05-31 | Asm Japan K.K. | Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections |
US6734090B2 (en) | 2002-02-20 | 2004-05-11 | International Business Machines Corporation | Method of making an edge seal for a semiconductor device |
DE10207131B4 (de) | 2002-02-20 | 2007-12-20 | Infineon Technologies Ag | Verfahren zur Bildung einer Hartmaske in einer Schicht auf einer flachen Scheibe |
US6787185B2 (en) | 2002-02-25 | 2004-09-07 | Micron Technology, Inc. | Deposition methods for improved delivery of metastable species |
US20030159653A1 (en) | 2002-02-28 | 2003-08-28 | Dando Ross S. | Manifold assembly for feeding reactive precursors to substrate processing chambers |
US20030170583A1 (en) | 2002-03-01 | 2003-09-11 | Hitachi Kokusai Electric Inc. | Heat treatment apparatus and a method for fabricating substrates |
KR100997699B1 (ko) | 2002-03-05 | 2010-12-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
KR100449028B1 (ko) | 2002-03-05 | 2004-09-16 | 삼성전자주식회사 | 원자층 증착법을 이용한 박막 형성방법 |
EP1485513A2 (en) | 2002-03-08 | 2004-12-15 | Sundew Technologies, LLC | Ald method and apparatus |
US6753618B2 (en) | 2002-03-11 | 2004-06-22 | Micron Technology, Inc. | MIM capacitor with metal nitride electrode materials and method of formation |
JP2003264186A (ja) | 2002-03-11 | 2003-09-19 | Asm Japan Kk | Cvd装置処理室のクリーニング方法 |
US6835039B2 (en) | 2002-03-15 | 2004-12-28 | Asm International N.V. | Method and apparatus for batch processing of wafers in a furnace |
JP4157914B2 (ja) | 2002-03-20 | 2008-10-01 | 坂野 數仁 | 温度測定装置及び温度測定方法 |
US6800134B2 (en) | 2002-03-26 | 2004-10-05 | Micron Technology, Inc. | Chemical vapor deposition methods and atomic layer deposition methods |
US6825134B2 (en) | 2002-03-26 | 2004-11-30 | Applied Materials, Inc. | Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow |
JP4099092B2 (ja) | 2002-03-26 | 2008-06-11 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法、高速ロータリバルブ |
JP4128383B2 (ja) | 2002-03-27 | 2008-07-30 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
DE10214066B4 (de) | 2002-03-28 | 2007-02-01 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterbauelement mit retrogradem Dotierprofil in einem Kanalgebiet und Verfahren zur Herstellung desselben |
JP4959921B2 (ja) | 2002-03-28 | 2012-06-27 | プレジデント アンド フェロウズ オブ ハーバード カレッジ | 二酸化珪素ナノラミネートの蒸着 |
US6594550B1 (en) | 2002-03-29 | 2003-07-15 | Asm America, Inc. | Method and system for using a buffer to track robotic movement |
JP4106948B2 (ja) | 2002-03-29 | 2008-06-25 | 東京エレクトロン株式会社 | 被処理体の跳上り検出装置、被処理体の跳上り検出方法、プラズマ処理装置及びプラズマ処理方法 |
US20030231698A1 (en) | 2002-03-29 | 2003-12-18 | Takatomo Yamaguchi | Apparatus and method for fabricating a semiconductor device and a heat treatment apparatus |
US20030188685A1 (en) | 2002-04-08 | 2003-10-09 | Applied Materials, Inc. | Laser drilled surfaces for substrate processing chambers |
JP4092937B2 (ja) | 2002-04-11 | 2008-05-28 | 松下電工株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US7988833B2 (en) | 2002-04-12 | 2011-08-02 | Schneider Electric USA, Inc. | System and method for detecting non-cathode arcing in a plasma generation apparatus |
US6710312B2 (en) | 2002-04-12 | 2004-03-23 | B H Thermal Corporation | Heating jacket assembly with field replaceable thermostat |
US6846515B2 (en) | 2002-04-17 | 2005-01-25 | Air Products And Chemicals, Inc. | Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants |
US8293001B2 (en) | 2002-04-17 | 2012-10-23 | Air Products And Chemicals, Inc. | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants |
KR100439948B1 (ko) | 2002-04-19 | 2004-07-12 | 주식회사 아이피에스 | 리모트 플라즈마 ald 장치 및 이를 이용한 ald 박막증착방법 |
KR100472730B1 (ko) | 2002-04-26 | 2005-03-08 | 주식회사 하이닉스반도체 | 원자층증착법을 이용한 반도체 소자의 금속전극 형성방법 |
US7045430B2 (en) | 2002-05-02 | 2006-05-16 | Micron Technology Inc. | Atomic layer-deposited LaAlO3 films for gate dielectrics |
US7589029B2 (en) | 2002-05-02 | 2009-09-15 | Micron Technology, Inc. | Atomic layer deposition and conversion |
US20030209326A1 (en) | 2002-05-07 | 2003-11-13 | Mattson Technology, Inc. | Process and system for heating semiconductor substrates in a processing chamber containing a susceptor |
KR100437458B1 (ko) | 2002-05-07 | 2004-06-23 | 삼성전자주식회사 | 상변화 기억 셀들 및 그 제조방법들 |
JP2003324072A (ja) | 2002-05-07 | 2003-11-14 | Nec Electronics Corp | 半導体製造装置 |
US7122844B2 (en) | 2002-05-13 | 2006-10-17 | Cree, Inc. | Susceptor for MOCVD reactor |
US6682973B1 (en) | 2002-05-16 | 2004-01-27 | Advanced Micro Devices, Inc. | Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications |
KR100466818B1 (ko) | 2002-05-17 | 2005-01-24 | 주식회사 하이닉스반도체 | 반도체 소자의 절연막 형성 방법 |
US6797525B2 (en) | 2002-05-22 | 2004-09-28 | Agere Systems Inc. | Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process |
US6902656B2 (en) | 2002-05-24 | 2005-06-07 | Dalsa Semiconductor Inc. | Fabrication of microstructures with vacuum-sealed cavity |
KR20030092305A (ko) | 2002-05-29 | 2003-12-06 | 삼성전자주식회사 | 고온 언도우프 막 증착 설비의 챔버 외벽에 대한 온도측정장치 |
US20060014384A1 (en) | 2002-06-05 | 2006-01-19 | Jong-Cheol Lee | Method of forming a layer and forming a capacitor of a semiconductor device having the same layer |
US7135421B2 (en) | 2002-06-05 | 2006-11-14 | Micron Technology, Inc. | Atomic layer-deposited hafnium aluminum oxide |
JP4311914B2 (ja) | 2002-06-05 | 2009-08-12 | 住友電気工業株式会社 | 半導体製造装置用ヒータモジュール |
US7195693B2 (en) | 2002-06-05 | 2007-03-27 | Advanced Thermal Sciences | Lateral temperature equalizing system for large area surfaces during processing |
AU2003242104A1 (en) | 2002-06-10 | 2003-12-22 | Tokyo Electron Limited | Processing device and processing method |
JP2004014952A (ja) | 2002-06-10 | 2004-01-15 | Tokyo Electron Ltd | 処理装置および処理方法 |
US6849464B2 (en) | 2002-06-10 | 2005-02-01 | Micron Technology, Inc. | Method of fabricating a multilayer dielectric tunnel barrier structure |
US7067439B2 (en) | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
US6858547B2 (en) | 2002-06-14 | 2005-02-22 | Applied Materials, Inc. | System and method for forming a gate dielectric |
US7601225B2 (en) | 2002-06-17 | 2009-10-13 | Asm International N.V. | System for controlling the sublimation of reactants |
JP2004022902A (ja) | 2002-06-18 | 2004-01-22 | Fujitsu Ltd | 半導体装置の製造方法 |
KR100455297B1 (ko) | 2002-06-19 | 2004-11-06 | 삼성전자주식회사 | 무기물 나노튜브 제조방법 |
JP3670628B2 (ja) | 2002-06-20 | 2005-07-13 | 株式会社東芝 | 成膜方法、成膜装置、および半導体装置の製造方法 |
TWI278532B (en) | 2002-06-23 | 2007-04-11 | Asml Us Inc | Method for energy-assisted atomic layer deposition and removal |
US6552209B1 (en) | 2002-06-24 | 2003-04-22 | Air Products And Chemicals, Inc. | Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films |
JP3999059B2 (ja) | 2002-06-26 | 2007-10-31 | 東京エレクトロン株式会社 | 基板処理システム及び基板処理方法 |
US20040018750A1 (en) | 2002-07-02 | 2004-01-29 | Sophie Auguste J.L. | Method for deposition of nitrogen doped silicon carbide films |
US7356762B2 (en) | 2002-07-08 | 2008-04-08 | Asm International Nv | Method for the automatic generation of an interactive electronic equipment documentation package |
US6821347B2 (en) | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
US6838125B2 (en) | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
AU2003249030A1 (en) | 2002-07-15 | 2004-02-02 | Aviza Technology, Inc. | Servomotor control system and method in a semiconductor manufacturing environment |
US6976822B2 (en) | 2002-07-16 | 2005-12-20 | Semitool, Inc. | End-effectors and transfer devices for handling microelectronic workpieces |
WO2004106584A1 (en) | 2003-05-27 | 2004-12-09 | Applied Materials, Inc. | Method and apparatus for generating a precursor for a semiconductor processing system |
US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
US7357138B2 (en) | 2002-07-18 | 2008-04-15 | Air Products And Chemicals, Inc. | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
WO2004010467A2 (en) | 2002-07-19 | 2004-01-29 | Aviza Technology, Inc. | Low temperature dielectric deposition using aminosilane and ozone |
CN100374768C (zh) | 2002-07-19 | 2008-03-12 | 诚实公司 | 液体流动控制设备及方法 |
TW200427858A (en) | 2002-07-19 | 2004-12-16 | Asml Us Inc | Atomic layer deposition of high k dielectric films |
KR100447284B1 (ko) | 2002-07-19 | 2004-09-07 | 삼성전자주식회사 | 화학기상증착 챔버의 세정 방법 |
US7297641B2 (en) | 2002-07-19 | 2007-11-20 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
US7223323B2 (en) | 2002-07-24 | 2007-05-29 | Applied Materials, Inc. | Multi-chemistry plating system |
US7018555B2 (en) | 2002-07-26 | 2006-03-28 | Dainippon Screen Mfg. Co., Ltd. | Substrate treatment method and substrate treatment apparatus |
KR100464855B1 (ko) | 2002-07-26 | 2005-01-06 | 삼성전자주식회사 | 박막 형성 방법과, 이를 이용한 커패시터 형성 방법 및트랜지스터 형성 방법 |
KR101183109B1 (ko) | 2002-07-30 | 2012-09-24 | 에이에스엠 아메리카, 인코포레이티드 | 캐리어 가스를 이용하는 승화 시스템 |
US7504006B2 (en) | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
DE10235427A1 (de) | 2002-08-02 | 2004-02-12 | Eos Gmbh Electro Optical Systems | Vorrichtung und Verfahren zum Herstellen von dreidimensionalen Objekten mittels eines generativen Fertigungsverfahrens |
US7153542B2 (en) | 2002-08-06 | 2006-12-26 | Tegal Corporation | Assembly line processing method |
KR100480610B1 (ko) | 2002-08-09 | 2005-03-31 | 삼성전자주식회사 | 실리콘 산화막을 이용한 미세 패턴 형성방법 |
JP4034145B2 (ja) | 2002-08-09 | 2008-01-16 | 住友大阪セメント株式会社 | サセプタ装置 |
US7085623B2 (en) | 2002-08-15 | 2006-08-01 | Asm International Nv | Method and system for using short ranged wireless enabled computers as a service tool |
TW200408015A (en) | 2002-08-18 | 2004-05-16 | Asml Us Inc | Atomic layer deposition of high K metal silicates |
TW200408323A (en) | 2002-08-18 | 2004-05-16 | Asml Us Inc | Atomic layer deposition of high k metal oxides |
US6649921B1 (en) | 2002-08-19 | 2003-11-18 | Fusion Uv Systems, Inc. | Apparatus and method providing substantially two-dimensionally uniform irradiation |
US6927140B2 (en) | 2002-08-21 | 2005-08-09 | Intel Corporation | Method for fabricating a bipolar transistor base |
US20040036129A1 (en) | 2002-08-22 | 2004-02-26 | Micron Technology, Inc. | Atomic layer deposition of CMOS gates with variable work functions |
US6967154B2 (en) | 2002-08-26 | 2005-11-22 | Micron Technology, Inc. | Enhanced atomic layer deposition |
US6794284B2 (en) | 2002-08-28 | 2004-09-21 | Micron Technology, Inc. | Systems and methods for forming refractory metal nitride layers using disilazanes |
US7041609B2 (en) | 2002-08-28 | 2006-05-09 | Micron Technology, Inc. | Systems and methods for forming metal oxides using alcohols |
JP2004091848A (ja) | 2002-08-30 | 2004-03-25 | Tokyo Electron Ltd | 薄膜形成装置の原料ガス供給系および薄膜形成装置 |
WO2004025697A2 (en) | 2002-09-10 | 2004-03-25 | Fsi International, Inc. | Thermal process station with heated lid |
US6936086B2 (en) | 2002-09-11 | 2005-08-30 | Planar Systems, Inc. | High conductivity particle filter |
JP2004103990A (ja) | 2002-09-12 | 2004-04-02 | Hitachi Kokusai Electric Inc | 半導体製造装置および半導体装置の製造方法 |
US20040050325A1 (en) | 2002-09-12 | 2004-03-18 | Samoilov Arkadii V. | Apparatus and method for delivering process gas to a substrate processing system |
US7011299B2 (en) | 2002-09-16 | 2006-03-14 | Matheson Tri-Gas, Inc. | Liquid vapor delivery system and method of maintaining a constant level of fluid therein |
KR100497748B1 (ko) | 2002-09-17 | 2005-06-29 | 주식회사 무한 | 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법 |
US7411352B2 (en) | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
JP4231953B2 (ja) | 2002-09-24 | 2009-03-04 | ペガサスネット株式会社 | 耳孔式saw体温計及び該体温計による体温管理システム |
JP2004128019A (ja) | 2002-09-30 | 2004-04-22 | Applied Materials Inc | プラズマ処理方法及び装置 |
JP2004127957A (ja) | 2002-09-30 | 2004-04-22 | Fujitsu Ltd | 半導体装置の製造方法と半導体装置 |
US7749563B2 (en) | 2002-10-07 | 2010-07-06 | Applied Materials, Inc. | Two-layer film for next generation damascene barrier application with good oxidation resistance |
JP3671951B2 (ja) | 2002-10-08 | 2005-07-13 | 住友電気工業株式会社 | 測温装置及びそれを用いたセラミックスヒータ |
JP2004134553A (ja) | 2002-10-10 | 2004-04-30 | Sony Corp | レジストパターンの形成方法及び半導体装置の製造方法 |
US6905737B2 (en) | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
EP1408140A1 (en) | 2002-10-11 | 2004-04-14 | STMicroelectronics S.r.l. | A high-density plasma process for depositing a layer of Silicon Nitride |
US7080545B2 (en) | 2002-10-17 | 2006-07-25 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
KR100460841B1 (ko) | 2002-10-22 | 2004-12-09 | 한국전자통신연구원 | 플라즈마 인가 원자층 증착법을 통한 질소첨가 산화물박막의 형성방법 |
US6821909B2 (en) | 2002-10-30 | 2004-11-23 | Applied Materials, Inc. | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
EP1420080A3 (en) | 2002-11-14 | 2005-11-09 | Applied Materials, Inc. | Apparatus and method for hybrid chemical deposition processes |
US6676290B1 (en) | 2002-11-15 | 2004-01-13 | Hsueh-Yu Lu | Electronic clinical thermometer |
KR100520902B1 (ko) | 2002-11-20 | 2005-10-12 | 주식회사 아이피에스 | 알루미늄 화합물을 이용한 박막증착방법 |
US7062161B2 (en) | 2002-11-28 | 2006-06-13 | Dainippon Screen Mfg. Co., Ltd. | Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor |
KR100974141B1 (ko) | 2002-11-28 | 2010-08-04 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 |
KR100496265B1 (ko) | 2002-11-29 | 2005-06-17 | 한국전자통신연구원 | 반도체 소자의 박막 형성방법 |
TW200410337A (en) | 2002-12-02 | 2004-06-16 | Au Optronics Corp | Dry cleaning method for plasma reaction chamber |
US6858524B2 (en) | 2002-12-03 | 2005-02-22 | Asm International, Nv | Method of depositing barrier layer for metal gates |
US7122414B2 (en) | 2002-12-03 | 2006-10-17 | Asm International, Inc. | Method to fabricate dual metal CMOS devices |
US6895158B2 (en) | 2002-12-09 | 2005-05-17 | Eastman Kodak Company | Waveguide and method of smoothing optical surfaces |
US7092287B2 (en) | 2002-12-18 | 2006-08-15 | Asm International N.V. | Method of fabricating silicon nitride nanodots |
AU2003301074A1 (en) | 2002-12-20 | 2004-07-22 | Brooks Automation, Inc. | System and method for on-the-fly eccentricity recognition |
CN2588350Y (zh) | 2002-12-26 | 2003-11-26 | 张连合 | 一种热电偶 |
JP2004207564A (ja) | 2002-12-26 | 2004-07-22 | Fujitsu Ltd | 半導体装置の製造方法と半導体装置 |
DE10261362B8 (de) | 2002-12-30 | 2008-08-28 | Osram Opto Semiconductors Gmbh | Substrat-Halter |
US7270713B2 (en) | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
USD486891S1 (en) | 2003-01-21 | 2004-02-17 | Richard W. Cronce, Jr. | Vent pipe protective cover |
USD497977S1 (en) | 2003-01-22 | 2004-11-02 | Tour & Andersson Ab | Sealing ring membrane |
US7122222B2 (en) | 2003-01-23 | 2006-10-17 | Air Products And Chemicals, Inc. | Precursors for depositing silicon containing films and processes thereof |
US20040144980A1 (en) | 2003-01-27 | 2004-07-29 | Ahn Kie Y. | Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers |
US20040152287A1 (en) | 2003-01-31 | 2004-08-05 | Sherrill Adrian B. | Deposition of a silicon film |
US7129165B2 (en) | 2003-02-04 | 2006-10-31 | Asm Nutool, Inc. | Method and structure to improve reliability of copper interconnects |
US7163721B2 (en) | 2003-02-04 | 2007-01-16 | Tegal Corporation | Method to plasma deposit on organic polymer dielectric film |
US7713592B2 (en) | 2003-02-04 | 2010-05-11 | Tegal Corporation | Nanolayer deposition process |
KR100800639B1 (ko) | 2003-02-06 | 2008-02-01 | 동경 엘렉트론 주식회사 | 플라즈마 처리 방법, 반도체 기판 및 플라즈마 처리 장치 |
US6876017B2 (en) | 2003-02-08 | 2005-04-05 | Intel Corporation | Polymer sacrificial light absorbing structure and method |
US7374696B2 (en) | 2003-02-14 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for removing a halogen-containing residue |
TWI338323B (en) | 2003-02-17 | 2011-03-01 | Nikon Corp | Stage device, exposure device and manufacguring method of devices |
US7091453B2 (en) | 2003-02-27 | 2006-08-15 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus by means of light irradiation |
US20040168627A1 (en) | 2003-02-27 | 2004-09-02 | Sharp Laboratories Of America, Inc. | Atomic layer deposition of oxide film |
US6930059B2 (en) | 2003-02-27 | 2005-08-16 | Sharp Laboratories Of America, Inc. | Method for depositing a nanolaminate film by atomic layer deposition |
US6917755B2 (en) | 2003-02-27 | 2005-07-12 | Applied Materials, Inc. | Substrate support |
US7077911B2 (en) | 2003-03-03 | 2006-07-18 | Seiko Epson Corporation | MOCVD apparatus and MOCVD method |
US7098149B2 (en) | 2003-03-04 | 2006-08-29 | Air Products And Chemicals, Inc. | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
US7192892B2 (en) | 2003-03-04 | 2007-03-20 | Micron Technology, Inc. | Atomic layer deposited dielectric layers |
JP2004273766A (ja) | 2003-03-07 | 2004-09-30 | Watanabe Shoko:Kk | 気化装置及びそれを用いた成膜装置並びに気化方法及び成膜方法 |
US7238653B2 (en) | 2003-03-10 | 2007-07-03 | Hynix Semiconductor Inc. | Cleaning solution for photoresist and method for forming pattern using the same |
JP2004288916A (ja) | 2003-03-24 | 2004-10-14 | Renesas Technology Corp | Cvd装置 |
JP4369203B2 (ja) | 2003-03-24 | 2009-11-18 | 信越化学工業株式会社 | 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法 |
CN100352032C (zh) | 2003-03-26 | 2007-11-28 | 信越半导体株式会社 | 热处理用晶片支持器具及热处理装置 |
JP2004294638A (ja) | 2003-03-26 | 2004-10-21 | Tokyo Ohka Kogyo Co Ltd | ネガ型レジスト材料およびレジストパターン形成方法 |
US7223014B2 (en) | 2003-03-28 | 2007-05-29 | Intempco Controls Ltd. | Remotely programmable integrated sensor transmitter |
US6972055B2 (en) | 2003-03-28 | 2005-12-06 | Finens Corporation | Continuous flow deposition system |
US7208389B1 (en) | 2003-03-31 | 2007-04-24 | Novellus Systems, Inc. | Method of porogen removal from porous low-k films using UV radiation |
US20040198069A1 (en) | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
KR100500246B1 (ko) | 2003-04-09 | 2005-07-11 | 삼성전자주식회사 | 가스공급장치 |
US7037376B2 (en) | 2003-04-11 | 2006-05-02 | Applied Materials Inc. | Backflush chamber clean |
US6942753B2 (en) | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
US7077973B2 (en) | 2003-04-18 | 2006-07-18 | Applied Materials, Inc. | Methods for substrate orientation |
JP2004336019A (ja) | 2003-04-18 | 2004-11-25 | Advanced Lcd Technologies Development Center Co Ltd | 成膜方法、半導体素子の形成方法、半導体素子、表示装置の形成方法及び表示装置 |
TW200506093A (en) | 2003-04-21 | 2005-02-16 | Aviza Tech Inc | System and method for forming multi-component films |
US7183186B2 (en) | 2003-04-22 | 2007-02-27 | Micro Technology, Inc. | Atomic layer deposited ZrTiO4 films |
US7221553B2 (en) | 2003-04-22 | 2007-05-22 | Applied Materials, Inc. | Substrate support having heat transfer system |
US6953608B2 (en) | 2003-04-23 | 2005-10-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Solution for FSG induced metal corrosion & metal peeling defects with extra bias liner and smooth RF bias ramp up |
US20040211357A1 (en) | 2003-04-24 | 2004-10-28 | Gadgil Pradad N. | Method of manufacturing a gap-filled structure of a semiconductor device |
US20040261712A1 (en) | 2003-04-25 | 2004-12-30 | Daisuke Hayashi | Plasma processing apparatus |
KR200319645Y1 (ko) | 2003-04-28 | 2003-07-12 | 이규옥 | 웨이퍼 캐리어 고정 장치 |
US7601223B2 (en) | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
US7033113B2 (en) | 2003-05-01 | 2006-04-25 | Shell Oil Company | Mid-line connector and method for pipe-in-pipe electrical heating |
US20090204403A1 (en) | 2003-05-07 | 2009-08-13 | Omega Engineering, Inc. | Speech generating means for use with signal sensors |
US6939817B2 (en) | 2003-05-08 | 2005-09-06 | Micron Technology, Inc. | Removal of carbon from an insulative layer using ozone |
US7265061B1 (en) | 2003-05-09 | 2007-09-04 | Novellus Systems, Inc. | Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties |
WO2004102648A2 (en) | 2003-05-09 | 2004-11-25 | Asm America, Inc. | Reactor surface passivation through chemical deactivation |
CN1574200A (zh) | 2003-05-12 | 2005-02-02 | 艾格瑞系统有限公司 | 质量流控制流量检定和校准的方法 |
US20050000428A1 (en) | 2003-05-16 | 2005-01-06 | Shero Eric J. | Method and apparatus for vaporizing and delivering reactant |
USD505590S1 (en) | 2003-05-22 | 2005-05-31 | Kraft Foods Holdings, Inc. | Susceptor tray |
JP4403824B2 (ja) | 2003-05-26 | 2010-01-27 | 東京エレクトロン株式会社 | シリコン窒化膜の成膜方法 |
US8512798B2 (en) | 2003-06-05 | 2013-08-20 | Superpower, Inc. | Plasma assisted metalorganic chemical vapor deposition (MOCVD) system |
US7141500B2 (en) | 2003-06-05 | 2006-11-28 | American Air Liquide, Inc. | Methods for forming aluminum containing films utilizing amino aluminum precursors |
US7589003B2 (en) | 2003-06-13 | 2009-09-15 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law | GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon |
US7598513B2 (en) | 2003-06-13 | 2009-10-06 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law | SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn |
WO2004114368A2 (en) | 2003-06-13 | 2004-12-29 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | METHOD FOR PREPARING GE1-x-ySnxEy (E=P, As, Sb) SEMICONDUCTORS AND RELATED Si-Ge-Sn-E AND Si-Ge-E ANALOGS |
KR100724181B1 (ko) | 2003-06-16 | 2007-05-31 | 동경 엘렉트론 주식회사 | 성막 방법, 반도체 장치의 제조 방법, 반도체 장치 및 성막장치 |
US7192824B2 (en) | 2003-06-24 | 2007-03-20 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectric layers |
DE10328660B3 (de) | 2003-06-26 | 2004-12-02 | Infineon Technologies Ag | Verfahren zum Bestimmen der Temperatur eines Halbleiterwafers |
KR20050001793A (ko) | 2003-06-26 | 2005-01-07 | 삼성전자주식회사 | 단원자층 증착 공정의 실시간 분석 방법 |
ATE468421T1 (de) | 2003-06-27 | 2010-06-15 | Sundew Technologies Llc | Vorrichtung und verfahren zur steuerung des dampfdrucks einer chemikalienquelle |
WO2005007283A2 (en) | 2003-07-08 | 2005-01-27 | Sundew Technologies, Llc | Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement |
US7547363B2 (en) | 2003-07-08 | 2009-06-16 | Tosoh Finechem Corporation | Solid organometallic compound-filled container and filling method thereof |
US7055875B2 (en) | 2003-07-11 | 2006-06-06 | Asyst Technologies, Inc. | Ultra low contact area end effector |
JP4298421B2 (ja) | 2003-07-23 | 2009-07-22 | エスペック株式会社 | サーマルプレートおよび試験装置 |
US6909839B2 (en) | 2003-07-23 | 2005-06-21 | Advanced Technology Materials, Inc. | Delivery systems for efficient vaporization of precursor source material |
US7399388B2 (en) | 2003-07-25 | 2008-07-15 | Applied Materials, Inc. | Sequential gas flow oxide deposition technique |
US7122481B2 (en) | 2003-07-25 | 2006-10-17 | Intel Corporation | Sealing porous dielectrics with silane coupling reagents |
US7361447B2 (en) | 2003-07-30 | 2008-04-22 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
KR20060054387A (ko) | 2003-08-04 | 2006-05-22 | 에이에스엠 아메리카, 인코포레이티드 | 증착 전 게르마늄 표면 처리 방법 |
US7682454B2 (en) | 2003-08-07 | 2010-03-23 | Sundew Technologies, Llc | Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems |
KR100536604B1 (ko) | 2003-08-14 | 2005-12-14 | 삼성전자주식회사 | 고밀도 플라즈마 증착법을 이용한 갭필 방법 |
JP2005072405A (ja) | 2003-08-27 | 2005-03-17 | Sony Corp | 薄膜の形成方法および半導体装置の製造方法 |
US7422635B2 (en) | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
JP3881973B2 (ja) | 2003-08-29 | 2007-02-14 | 三菱重工業株式会社 | 窒化シリコン膜の成膜方法 |
US8152922B2 (en) | 2003-08-29 | 2012-04-10 | Asm America, Inc. | Gas mixer and manifold assembly for ALD reactor |
JP4235066B2 (ja) | 2003-09-03 | 2009-03-04 | 日本エー・エス・エム株式会社 | 薄膜形成方法 |
EP1667217A1 (en) | 2003-09-03 | 2006-06-07 | Tokyo Electron Limited | Gas treatment device and heat readiting method |
US7235482B2 (en) | 2003-09-08 | 2007-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology |
US7335277B2 (en) | 2003-09-08 | 2008-02-26 | Hitachi High-Technologies Corporation | Vacuum processing apparatus |
KR100551138B1 (ko) | 2003-09-09 | 2006-02-10 | 어댑티브프라즈마테크놀로지 주식회사 | 균일한 플라즈마 발생을 위한 적응형 플라즈마 소스 |
US7414281B1 (en) | 2003-09-09 | 2008-08-19 | Spansion Llc | Flash memory with high-K dielectric material between substrate and gate |
US7132201B2 (en) | 2003-09-12 | 2006-11-07 | Micron Technology, Inc. | Transparent amorphous carbon structure in semiconductor devices |
KR100765681B1 (ko) | 2003-09-19 | 2007-10-12 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법 및 기판 처리 장치 |
US6911399B2 (en) | 2003-09-19 | 2005-06-28 | Applied Materials, Inc. | Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition |
US20050098107A1 (en) | 2003-09-24 | 2005-05-12 | Du Bois Dale R. | Thermal processing system with cross-flow liner |
US20070137794A1 (en) | 2003-09-24 | 2007-06-21 | Aviza Technology, Inc. | Thermal processing system with across-flow liner |
JP4524554B2 (ja) | 2003-09-25 | 2010-08-18 | 信越化学工業株式会社 | γ,δ−不飽和カルボン酸及びそのシリルエステルの製造方法、カルボキシル基を有する有機ケイ素化合物及びその製造方法 |
US7156380B2 (en) | 2003-09-29 | 2007-01-02 | Asm International, N.V. | Safe liquid source containers |
US6875677B1 (en) | 2003-09-30 | 2005-04-05 | Sharp Laboratories Of America, Inc. | Method to control the interfacial layer for deposition of high dielectric constant films |
US20050069651A1 (en) | 2003-09-30 | 2005-03-31 | Tokyo Electron Limited | Plasma processing system |
US7205247B2 (en) | 2003-09-30 | 2007-04-17 | Aviza Technology, Inc. | Atomic layer deposition of hafnium-based high-k dielectric |
US6982046B2 (en) | 2003-10-01 | 2006-01-03 | General Electric Company | Light sources with nanometer-sized VUV radiation-absorbing phosphors |
US6974781B2 (en) | 2003-10-20 | 2005-12-13 | Asm International N.V. | Reactor precoating for reduced stress and uniform CVD |
WO2005042160A2 (en) | 2003-10-29 | 2005-05-12 | Asm America, Inc. | Reaction system for growing a thin film |
US20050101843A1 (en) | 2003-11-06 | 2005-05-12 | Welch Allyn, Inc. | Wireless disposable physiological sensor |
US7329947B2 (en) | 2003-11-07 | 2008-02-12 | Sumitomo Mitsubishi Silicon Corporation | Heat treatment jig for semiconductor substrate |
US8313277B2 (en) | 2003-11-10 | 2012-11-20 | Brooks Automation, Inc. | Semiconductor manufacturing process modules |
US7071118B2 (en) | 2003-11-12 | 2006-07-04 | Veeco Instruments, Inc. | Method and apparatus for fabricating a conformal thin film on a substrate |
US20050153571A1 (en) | 2003-11-17 | 2005-07-14 | Yoshihide Senzaki | Nitridation of high-k dielectric films |
TW200527513A (en) | 2003-11-20 | 2005-08-16 | Hitachi Int Electric Inc | Method for manufacturing semiconductor device and substrate processing apparatus |
KR100550641B1 (ko) | 2003-11-22 | 2006-02-09 | 주식회사 하이닉스반도체 | 산화하프늄과 산화알루미늄이 혼합된 유전막 및 그 제조방법 |
KR20050054122A (ko) | 2003-12-04 | 2005-06-10 | 성명모 | 자외선 원자층 증착법을 이용한 박막 제조 방법 |
US20050120805A1 (en) | 2003-12-04 | 2005-06-09 | John Lane | Method and apparatus for substrate temperature control |
JP4725085B2 (ja) | 2003-12-04 | 2011-07-13 | 株式会社豊田中央研究所 | 非晶質炭素、非晶質炭素被膜部材および非晶質炭素膜の成膜方法 |
US7431966B2 (en) | 2003-12-09 | 2008-10-07 | Micron Technology, Inc. | Atomic layer deposition method of depositing an oxide on a substrate |
US7143897B1 (en) | 2003-12-09 | 2006-12-05 | H20 International, Inc. | Water filter |
JP2005172489A (ja) | 2003-12-09 | 2005-06-30 | Tokyo Yogyo Co Ltd | 溶湯用測温プローブ |
KR100519798B1 (ko) | 2003-12-11 | 2005-10-10 | 삼성전자주식회사 | 향상된 생산성을 갖는 박막 형성 방법 |
CZ2006399A3 (cs) | 2003-12-22 | 2006-09-13 | Seco Tools Ab | Nosic a zpusob pokrývání rezacích nástroju |
US7645341B2 (en) | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
KR100620673B1 (ko) | 2004-01-05 | 2006-09-13 | 주식회사 하이닉스반도체 | 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성 방법 |
KR100593960B1 (ko) | 2004-01-09 | 2006-06-30 | 병호 최 | 광원자층 증착장치 및 증착방법 |
KR100549273B1 (ko) | 2004-01-15 | 2006-02-03 | 주식회사 테라세미콘 | 반도체 제조장치의 기판홀더 |
JP4513329B2 (ja) | 2004-01-16 | 2010-07-28 | 東京エレクトロン株式会社 | 処理装置 |
US7071051B1 (en) | 2004-01-20 | 2006-07-04 | Advanced Micro Devices, Inc. | Method for forming a thin, high quality buffer layer in a field effect transistor and related structure |
US7005227B2 (en) | 2004-01-21 | 2006-02-28 | Intel Corporation | One component EUV photoresist |
US7354847B2 (en) | 2004-01-26 | 2008-04-08 | Taiwan Semiconductor Manufacturing Company | Method of trimming technology |
JP4833859B2 (ja) | 2004-01-30 | 2011-12-07 | 東京エレクトロン株式会社 | 流体用ギャップを有する基板ホルダとこの基板ホルダの製造方法 |
US7163393B2 (en) | 2004-02-02 | 2007-01-16 | Sumitomo Mitsubishi Silicon Corporation | Heat treatment jig for semiconductor silicon substrate |
DE102004005385A1 (de) | 2004-02-03 | 2005-10-20 | Infineon Technologies Ag | Verwendung von gelösten Hafniumalkoxiden bzw. Zirkoniumalkoxiden als Precursoren für Hafniumoxid- und Hafniumoxynitridschichten bzw. Zirkoniumoxid- und Zirkoniumoxynitridschichten |
US20050229849A1 (en) | 2004-02-13 | 2005-10-20 | Applied Materials, Inc. | High productivity plasma processing chamber |
US20050181535A1 (en) | 2004-02-17 | 2005-08-18 | Yun Sun J. | Method of fabricating passivation layer for organic devices |
US20050187647A1 (en) | 2004-02-19 | 2005-08-25 | Kuo-Hua Wang | Intelligent full automation controlled flow for a semiconductor furnace tool |
US7088003B2 (en) | 2004-02-19 | 2006-08-08 | International Business Machines Corporation | Structures and methods for integration of ultralow-k dielectrics with improved reliability |
US20100297391A1 (en) | 2004-02-25 | 2010-11-25 | General Nanotechnoloy Llc | Diamond capsules and methods of manufacture |
US20060062910A1 (en) | 2004-03-01 | 2006-03-23 | Meiere Scott H | Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof |
US20050214458A1 (en) | 2004-03-01 | 2005-09-29 | Meiere Scott H | Low zirconium hafnium halide compositions |
CN1954138B (zh) | 2004-03-02 | 2011-02-16 | 罗斯蒙德公司 | 具有改进电能产生的过程设备 |
CN100373545C (zh) | 2004-03-05 | 2008-03-05 | 东京毅力科创株式会社 | 基板处理装置、基板处理方法及程序 |
US20050233477A1 (en) | 2004-03-05 | 2005-10-20 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method, and program for implementing the method |
JP4879159B2 (ja) | 2004-03-05 | 2012-02-22 | アプライド マテリアルズ インコーポレイテッド | アモルファス炭素膜堆積のためのcvdプロセス |
US7079740B2 (en) | 2004-03-12 | 2006-07-18 | Applied Materials, Inc. | Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides |
KR100538096B1 (ko) | 2004-03-16 | 2005-12-21 | 삼성전자주식회사 | 원자층 증착 방법을 이용하는 커패시터 형성 방법 |
US7053010B2 (en) | 2004-03-22 | 2006-05-30 | Micron Technology, Inc. | Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells |
US7582555B1 (en) | 2005-12-29 | 2009-09-01 | Novellus Systems, Inc. | CVD flowable gap fill |
US7524735B1 (en) | 2004-03-25 | 2009-04-28 | Novellus Systems, Inc | Flowable film dielectric gap fill process |
US20050214457A1 (en) | 2004-03-29 | 2005-09-29 | Applied Materials, Inc. | Deposition of low dielectric constant films by N2O addition |
US20050221021A1 (en) | 2004-03-31 | 2005-10-06 | Tokyo Electron Limited | Method and system for performing atomic layer deposition |
US20050221618A1 (en) | 2004-03-31 | 2005-10-06 | Amrhein Frederick J | System for controlling a plenum output flow geometry |
KR20060060731A (ko) | 2004-03-31 | 2006-06-05 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법 |
CN1292092C (zh) | 2004-04-01 | 2006-12-27 | 南昌大学 | 用于金属有机化学气相沉积设备的双层进气喷头 |
US7585371B2 (en) | 2004-04-08 | 2009-09-08 | Micron Technology, Inc. | Substrate susceptors for receiving semiconductor substrates to be deposited upon |
US20050227502A1 (en) | 2004-04-12 | 2005-10-13 | Applied Materials, Inc. | Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity |
US7273526B2 (en) | 2004-04-15 | 2007-09-25 | Asm Japan K.K. | Thin-film deposition apparatus |
US7785672B2 (en) | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US20060019502A1 (en) | 2004-07-23 | 2006-01-26 | Park Beom S | Method of controlling the film properties of a CVD-deposited silicon nitride film |
USD553104S1 (en) | 2004-04-21 | 2007-10-16 | Tokyo Electron Limited | Absorption board for an electric chuck used in semiconductor manufacture |
KR100840705B1 (ko) | 2004-04-21 | 2008-06-24 | 가부시키가이샤 히다치 고쿠사이 덴키 | 열처리장치 |
US7018941B2 (en) | 2004-04-21 | 2006-03-28 | Applied Materials, Inc. | Post treatment of low k dielectric films |
US7708859B2 (en) | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
US7049247B2 (en) | 2004-05-03 | 2006-05-23 | International Business Machines Corporation | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made |
US6982208B2 (en) | 2004-05-03 | 2006-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for producing high throughput strained-Si channel MOSFETS |
JP2005322668A (ja) | 2004-05-06 | 2005-11-17 | Renesas Technology Corp | 成膜装置および成膜方法 |
US7109114B2 (en) | 2004-05-07 | 2006-09-19 | Applied Materials, Inc. | HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US8074599B2 (en) | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
WO2005109486A1 (en) | 2004-05-12 | 2005-11-17 | Viatron Technologies Inc. | System for heat treatment of semiconductor device |
US8328939B2 (en) | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
KR100469132B1 (ko) | 2004-05-18 | 2005-01-29 | 주식회사 아이피에스 | 주기적 펄스 두 단계 플라즈마 원자층 증착장치 및 방법 |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US20060019033A1 (en) | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
JP2005340251A (ja) | 2004-05-24 | 2005-12-08 | Shin Etsu Chem Co Ltd | プラズマ処理装置用のシャワープレート及びプラズマ処理装置 |
US7271093B2 (en) | 2004-05-24 | 2007-09-18 | Asm Japan K.K. | Low-carbon-doped silicon oxide film and damascene structure using same |
US20050266173A1 (en) | 2004-05-26 | 2005-12-01 | Tokyo Electron Limited | Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process |
US7622005B2 (en) | 2004-05-26 | 2009-11-24 | Applied Materials, Inc. | Uniformity control for low flow process and chamber to chamber matching |
US7580388B2 (en) | 2004-06-01 | 2009-08-25 | Lg Electronics Inc. | Method and apparatus for providing enhanced messages on common control channel in wireless communication system |
US7651583B2 (en) | 2004-06-04 | 2010-01-26 | Tokyo Electron Limited | Processing system and method for treating a substrate |
US7037794B2 (en) | 2004-06-09 | 2006-05-02 | International Business Machines Corporation | Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain |
KR100589062B1 (ko) | 2004-06-10 | 2006-06-12 | 삼성전자주식회사 | 원자층 적층 방식의 박막 형성방법 및 이를 이용한 반도체소자의 커패시터 형성방법 |
US7396743B2 (en) | 2004-06-10 | 2008-07-08 | Singh Kaushal K | Low temperature epitaxial growth of silicon-containing films using UV radiation |
US7132360B2 (en) | 2004-06-10 | 2006-11-07 | Freescale Semiconductor, Inc. | Method for treating a semiconductor surface to form a metal-containing layer |
JP4565897B2 (ja) | 2004-06-14 | 2010-10-20 | 株式会社Adeka | 薄膜形成用原料及び薄膜の製造方法 |
US7399570B2 (en) | 2004-06-18 | 2008-07-15 | Hynix Semiconductor Inc. | Water-soluble negative photoresist polymer and composition containing the same |
US7951262B2 (en) | 2004-06-21 | 2011-05-31 | Tokyo Electron Limited | Plasma processing apparatus and method |
JP4534619B2 (ja) | 2004-06-21 | 2010-09-01 | 株式会社Sumco | 半導体シリコン基板用熱処理治具 |
KR20050121426A (ko) | 2004-06-22 | 2005-12-27 | 삼성에스디아이 주식회사 | 탄소나노튜브 제조용 촉매의 제조 방법 |
US7244958B2 (en) | 2004-06-24 | 2007-07-17 | International Business Machines Corporation | Integration of strained Ge into advanced CMOS technology |
US7073834B2 (en) | 2004-06-25 | 2006-07-11 | Applied Materials, Inc. | Multiple section end effector assembly |
KR100614801B1 (ko) | 2004-07-05 | 2006-08-22 | 삼성전자주식회사 | 반도체 장치의 막 형성방법 |
US7363195B2 (en) | 2004-07-07 | 2008-04-22 | Sensarray Corporation | Methods of configuring a sensor network |
EP1769522B1 (en) | 2004-07-09 | 2016-11-23 | Philips Lighting Holding B.V. | Uvc/vuv dielectric barrier discharge lamp with reflector |
JP4559427B2 (ja) | 2004-07-13 | 2010-10-06 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
US7422653B2 (en) | 2004-07-13 | 2008-09-09 | Applied Materials, Inc. | Single-sided inflatable vertical slit valve |
US7094442B2 (en) | 2004-07-13 | 2006-08-22 | Applied Materials, Inc. | Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon |
US7409263B2 (en) | 2004-07-14 | 2008-08-05 | Applied Materials, Inc. | Methods and apparatus for repositioning support for a substrate carrier |
KR100578819B1 (ko) | 2004-07-15 | 2006-05-11 | 삼성전자주식회사 | 원자층 적층 방법과 이를 이용한 게이트 구조물의 제조방법 및 커패시터의 제조 방법 |
US20060016783A1 (en) | 2004-07-22 | 2006-01-26 | Dingjun Wu | Process for titanium nitride removal |
US20060021703A1 (en) | 2004-07-29 | 2006-02-02 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
KR100689401B1 (ko) | 2004-07-30 | 2007-03-08 | 주식회사 하이닉스반도체 | 포토레지스트 중합체 및 이를 함유하는 포토레지스트 조성물 |
US7689687B2 (en) | 2004-07-30 | 2010-03-30 | Fisher-Rosemount Systems, Inc. | Communication controller with automatic time stamping |
CN1997770A (zh) | 2004-07-30 | 2007-07-11 | Lpe公司 | 具有控制定位的衬托器的外延反应器 |
US20060021572A1 (en) | 2004-07-30 | 2006-02-02 | Colorado School Of Mines | High Vacuum Plasma-Assisted Chemical Vapor Deposition System |
JP4718141B2 (ja) | 2004-08-06 | 2011-07-06 | 東京エレクトロン株式会社 | 薄膜形成方法及び薄膜形成装置 |
KR101114219B1 (ko) | 2004-08-09 | 2012-03-05 | 주성엔지니어링(주) | 광원을 포함하는 원자층 증착장치 및 이를 이용한 증착방법 |
US7470633B2 (en) | 2004-08-09 | 2008-12-30 | Asm Japan K.K. | Method of forming a carbon polymer film using plasma CVD |
US20060040054A1 (en) | 2004-08-18 | 2006-02-23 | Pearlstein Ronald M | Passivating ALD reactor chamber internal surfaces to prevent residue buildup |
JP2006059931A (ja) | 2004-08-18 | 2006-03-02 | Canon Anelva Corp | 急速加熱処理装置 |
US7119032B2 (en) | 2004-08-23 | 2006-10-10 | Air Products And Chemicals, Inc. | Method to protect internal components of semiconductor processing equipment using layered superlattice materials |
KR101071136B1 (ko) | 2004-08-27 | 2011-10-10 | 엘지디스플레이 주식회사 | 평판표시장치의 제조를 위한 기판의 박막처리장치 |
ITMI20041677A1 (it) | 2004-08-30 | 2004-11-30 | E T C Epitaxial Technology Ct | Processo di pulitura e processo operativo per un reattore cvd. |
DE102004042431B4 (de) | 2004-08-31 | 2008-07-03 | Schott Ag | Verfahren und Vorrichtung zur Plasmabeschichtung von Werkstücken mit spektraler Auswertung der Prozessparameter und Verwendung der Vorrichtung |
US8158488B2 (en) | 2004-08-31 | 2012-04-17 | Micron Technology, Inc. | Method of increasing deposition rate of silicon dioxide on a catalyst |
US7910288B2 (en) | 2004-09-01 | 2011-03-22 | Micron Technology, Inc. | Mask material conversion |
US7253084B2 (en) | 2004-09-03 | 2007-08-07 | Asm America, Inc. | Deposition from liquid sources |
JP2006108629A (ja) | 2004-09-10 | 2006-04-20 | Toshiba Corp | 半導体装置の製造方法 |
US20060137609A1 (en) | 2004-09-13 | 2006-06-29 | Puchacz Jerzy P | Multi-single wafer processing apparatus |
US20060060930A1 (en) | 2004-09-17 | 2006-03-23 | Metz Matthew V | Atomic layer deposition of high dielectric constant gate dielectrics |
JP4698190B2 (ja) | 2004-09-22 | 2011-06-08 | 川惣電機工業株式会社 | 測温装置 |
US7806587B2 (en) | 2004-09-29 | 2010-10-05 | Citizen Holdings Co., Ltd. | Electronic clinical thermometer and method of producing the same |
DE102005045081B4 (de) | 2004-09-29 | 2011-07-07 | Covalent Materials Corp. | Suszeptor |
US7241475B2 (en) | 2004-09-30 | 2007-07-10 | The Aerospace Corporation | Method for producing carbon surface films by plasma exposure of a carbide compound |
US6874247B1 (en) | 2004-10-12 | 2005-04-05 | Tsang-Hung Hsu | Toothbrush dryer |
US20060257563A1 (en) | 2004-10-13 | 2006-11-16 | Seok-Joo Doh | Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique |
US20060099782A1 (en) | 2004-10-15 | 2006-05-11 | Massachusetts Institute Of Technology | Method for forming an interface between germanium and other materials |
US7780440B2 (en) | 2004-10-19 | 2010-08-24 | Canon Anelva Corporation | Substrate supporting/transferring tray |
US7790633B1 (en) | 2004-10-26 | 2010-09-07 | Novellus Systems, Inc. | Sequential deposition/anneal film densification method |
JP2006128188A (ja) | 2004-10-26 | 2006-05-18 | Nikon Corp | 基板搬送装置、基板搬送方法および露光装置 |
US7163900B2 (en) | 2004-11-01 | 2007-01-16 | Infineon Technologies Ag | Using polydentate ligands for sealing pores in low-k dielectrics |
JP2006135161A (ja) | 2004-11-08 | 2006-05-25 | Canon Inc | 絶縁膜の形成方法及び装置 |
JP4435666B2 (ja) | 2004-11-09 | 2010-03-24 | 東京エレクトロン株式会社 | プラズマ処理方法、成膜方法 |
KR100782369B1 (ko) | 2004-11-11 | 2007-12-07 | 삼성전자주식회사 | 반도체 제조장치 |
US7678682B2 (en) | 2004-11-12 | 2010-03-16 | Axcelis Technologies, Inc. | Ultraviolet assisted pore sealing of porous low k dielectric films |
US7428958B2 (en) | 2004-11-15 | 2008-09-30 | Nikon Corporation | Substrate conveyor apparatus, substrate conveyance method and exposure apparatus |
TWI654661B (zh) | 2004-11-18 | 2019-03-21 | 日商尼康股份有限公司 | 位置測量方法、位置控制方法、測量方法、裝載方法、曝光方法及曝光裝置、及元件製造方法 |
KR100773755B1 (ko) | 2004-11-18 | 2007-11-09 | 주식회사 아이피에스 | 플라즈마 ald 박막증착방법 |
US20060107898A1 (en) | 2004-11-19 | 2006-05-25 | Blomberg Tom E | Method and apparatus for measuring consumption of reactants |
DE602005005851T2 (de) | 2004-11-24 | 2009-04-09 | Oc Oerlikon Balzers Ag | Vakuumbehandlungskammer für sehr grossflächige substrate |
US20060113806A1 (en) | 2004-11-29 | 2006-06-01 | Asm Japan K.K. | Wafer transfer mechanism |
JP2006153706A (ja) | 2004-11-30 | 2006-06-15 | Taiyo Nippon Sanso Corp | 測温体および気相成長装置 |
US20060113675A1 (en) | 2004-12-01 | 2006-06-01 | Chung-Liang Chang | Barrier material and process for Cu interconnect |
US7368377B2 (en) | 2004-12-09 | 2008-05-06 | Interuniversitair Microelektronica Centrum (Imec) Vzw | Method for selective deposition of a thin self-assembled monolayer |
US7271463B2 (en) | 2004-12-10 | 2007-09-18 | Micron Technology, Inc. | Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base |
US7235501B2 (en) | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
US7290813B2 (en) | 2004-12-16 | 2007-11-06 | Asyst Technologies, Inc. | Active edge grip rest pad |
US7396732B2 (en) | 2004-12-17 | 2008-07-08 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Formation of deep trench airgaps and related applications |
US7255747B2 (en) | 2004-12-22 | 2007-08-14 | Sokudo Co., Ltd. | Coat/develop module with independent stations |
JP4560681B2 (ja) | 2004-12-24 | 2010-10-13 | ミネベア株式会社 | 多灯式放電灯点灯装置 |
JP2006186271A (ja) | 2004-12-28 | 2006-07-13 | Sharp Corp | 気相成長装置および成膜済基板の製造方法 |
KR20070107017A (ko) | 2004-12-30 | 2007-11-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 트리밍과 호환되는 라인 에지 조도 감소 방법 |
US7846499B2 (en) | 2004-12-30 | 2010-12-07 | Asm International N.V. | Method of pulsing vapor precursors in an ALD reactor |
US7482247B1 (en) | 2004-12-30 | 2009-01-27 | Novellus Systems, Inc. | Conformal nanolaminate dielectric deposition and etch bag gap fill process |
JP2006188729A (ja) | 2005-01-05 | 2006-07-20 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US7560395B2 (en) | 2005-01-05 | 2009-07-14 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
US7598516B2 (en) | 2005-01-07 | 2009-10-06 | International Business Machines Corporation | Self-aligned process for nanotube/nanowire FETs |
US7169668B2 (en) | 2005-01-09 | 2007-01-30 | United Microelectronics Corp. | Method of manufacturing a split-gate flash memory device |
CN101495668A (zh) | 2005-01-18 | 2009-07-29 | Asm美国公司 | 晶片支撑销组件 |
EP1866465A2 (en) | 2005-01-18 | 2007-12-19 | ASM America, Inc. | Reaction system for growing a thin film |
US7964380B2 (en) | 2005-01-21 | 2011-06-21 | Argylia Technologies | Nanoparticles for manipulation of biopolymers and methods of thereof |
JP2006203120A (ja) | 2005-01-24 | 2006-08-03 | Toshiba Corp | 半導体装置の製造方法 |
KR100640550B1 (ko) | 2005-01-26 | 2006-10-31 | 주식회사 아이피에스 | 플라즈마 ald 박막증착방법 |
US7235492B2 (en) | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
US7298009B2 (en) | 2005-02-01 | 2007-11-20 | Infineon Technologies Ag | Semiconductor method and device with mixed orientation substrate |
US7135402B2 (en) | 2005-02-01 | 2006-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sealing pores of low-k dielectrics using CxHy |
KR100585178B1 (ko) | 2005-02-05 | 2006-05-30 | 삼성전자주식회사 | 금속 게이트 전극을 가지는 FinFET을 포함하는반도체 소자 및 그 제조방법 |
US20060182885A1 (en) | 2005-02-14 | 2006-08-17 | Xinjian Lei | Preparation of metal silicon nitride films via cyclic deposition |
EP1851794A1 (en) | 2005-02-22 | 2007-11-07 | ASM America, Inc. | Plasma pre-treating surfaces for atomic layer deposition |
US7410340B2 (en) | 2005-02-24 | 2008-08-12 | Asyst Technologies, Inc. | Direct tool loading |
KR100667598B1 (ko) | 2005-02-25 | 2007-01-12 | 주식회사 아이피에스 | 반도체 처리 장치 |
JP4764028B2 (ja) | 2005-02-28 | 2011-08-31 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
KR100854995B1 (ko) | 2005-03-02 | 2008-08-28 | 삼성전자주식회사 | 고밀도 플라즈마 화학 기상 증착 장치 |
US6972478B1 (en) | 2005-03-07 | 2005-12-06 | Advanced Micro Devices, Inc. | Integrated circuit and method for its manufacture |
US7629267B2 (en) | 2005-03-07 | 2009-12-08 | Asm International N.V. | High stress nitride film and method for formation thereof |
JP4258518B2 (ja) | 2005-03-09 | 2009-04-30 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
JP4214124B2 (ja) | 2005-03-14 | 2009-01-28 | 株式会社バイオエコーネット | 耳式体温計 |
US7376520B2 (en) | 2005-03-16 | 2008-05-20 | Lam Research Corporation | System and method for gas flow verification |
US7211525B1 (en) | 2005-03-16 | 2007-05-01 | Novellus Systems, Inc. | Hydrogen treatment enhanced gap fill |
US8974868B2 (en) | 2005-03-21 | 2015-03-10 | Tokyo Electron Limited | Post deposition plasma cleaning system and method |
US7314835B2 (en) | 2005-03-21 | 2008-01-01 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
US20060211259A1 (en) | 2005-03-21 | 2006-09-21 | Maes Jan W | Silicon oxide cap over high dielectric constant films |
KR100655431B1 (ko) | 2005-03-23 | 2006-12-11 | 삼성전자주식회사 | 웨이퍼와의 접촉 면적을 최소화할 수 있는 웨이퍼 캐리어 및 이를 이용한 웨이퍼 세정방법 |
US7422636B2 (en) | 2005-03-25 | 2008-09-09 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system having reduced contamination |
JP2006278058A (ja) | 2005-03-28 | 2006-10-12 | Matsushita Electric Works Ltd | プラズマ処理装置 |
US20060226117A1 (en) | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
US7282415B2 (en) | 2005-03-29 | 2007-10-16 | Freescale Semiconductor, Inc. | Method for making a semiconductor device with strain enhancement |
US7479198B2 (en) | 2005-04-07 | 2009-01-20 | Timothy D'Annunzio | Methods for forming nanofiber adhesive structures |
US20060264066A1 (en) | 2005-04-07 | 2006-11-23 | Aviza Technology, Inc. | Multilayer multicomponent high-k films and methods for depositing the same |
KR100640640B1 (ko) | 2005-04-19 | 2006-10-31 | 삼성전자주식회사 | 미세 피치의 하드마스크를 이용한 반도체 소자의 미세 패턴형성 방법 |
JP4694878B2 (ja) | 2005-04-20 | 2011-06-08 | Okiセミコンダクタ株式会社 | 半導体製造装置および半導体装置の製造方法 |
US7160819B2 (en) | 2005-04-25 | 2007-01-09 | Sharp Laboratories Of America, Inc. | Method to perform selective atomic layer deposition of zinc oxide |
US8137465B1 (en) | 2005-04-26 | 2012-03-20 | Novellus Systems, Inc. | Single-chamber sequential curing of semiconductor wafers |
WO2006114781A2 (en) | 2005-04-26 | 2006-11-02 | University College Cork - National University Of Ireland, Cork | Deposition of materials |
US7351057B2 (en) | 2005-04-27 | 2008-04-01 | Asm International N.V. | Door plate for furnace |
US7084060B1 (en) | 2005-05-04 | 2006-08-01 | International Business Machines Corporation | Forming capping layer over metal wire structure using selective atomic layer deposition |
US7169018B2 (en) | 2005-05-04 | 2007-01-30 | Micrel, Incorporated | Wafer carrier checker and method of using same |
US7915173B2 (en) | 2005-05-05 | 2011-03-29 | Macronix International Co., Ltd. | Shallow trench isolation structure having reduced dislocation density |
US7214630B1 (en) | 2005-05-06 | 2007-05-08 | Novellus Systems, Inc. | PMOS transistor with compressive dielectric capping layer |
US20060251827A1 (en) | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | Tandem uv chamber for curing dielectric materials |
JP4666473B2 (ja) | 2005-05-12 | 2011-04-06 | 大日本スクリーン製造株式会社 | 基板熱処理装置 |
JP2006319261A (ja) | 2005-05-16 | 2006-11-24 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
US7875556B2 (en) | 2005-05-16 | 2011-01-25 | Air Products And Chemicals, Inc. | Precursors for CVD silicon carbo-nitride and silicon nitride films |
US7101763B1 (en) | 2005-05-17 | 2006-09-05 | International Business Machines Corporation | Low capacitance junction-isolation for bulk FinFET technology |
US7109098B1 (en) | 2005-05-17 | 2006-09-19 | Applied Materials, Inc. | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
US7422775B2 (en) | 2005-05-17 | 2008-09-09 | Applied Materials, Inc. | Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
US7312162B2 (en) | 2005-05-17 | 2007-12-25 | Applied Materials, Inc. | Low temperature plasma deposition process for carbon layer deposition |
US20060260545A1 (en) | 2005-05-17 | 2006-11-23 | Kartik Ramaswamy | Low temperature absorption layer deposition and high speed optical annealing system |
KR100731164B1 (ko) | 2005-05-19 | 2007-06-20 | 주식회사 피에조닉스 | 샤워헤드를 구비한 화학기상 증착 방법 및 장치 |
US20070155138A1 (en) | 2005-05-24 | 2007-07-05 | Pierre Tomasini | Apparatus and method for depositing silicon germanium films |
US7732342B2 (en) | 2005-05-26 | 2010-06-08 | Applied Materials, Inc. | Method to increase the compressive stress of PECVD silicon nitride films |
US8129290B2 (en) | 2005-05-26 | 2012-03-06 | Applied Materials, Inc. | Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure |
US8138104B2 (en) | 2005-05-26 | 2012-03-20 | Applied Materials, Inc. | Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure |
US20060269690A1 (en) | 2005-05-27 | 2006-11-30 | Asm Japan K.K. | Formation technology for nanoparticle films having low dielectric constant |
JPWO2006129643A1 (ja) | 2005-05-31 | 2009-01-08 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US20060275933A1 (en) | 2005-06-02 | 2006-12-07 | Applied Materials, Inc. | Thermally conductive ceramic tipped contact thermocouple |
CN101194344A (zh) | 2005-06-09 | 2008-06-04 | 艾克塞利斯技术公司 | 用于预金属和/或浅槽隔离应用中所用的旋涂介电材料的uv固化方法 |
WO2006134930A1 (ja) | 2005-06-13 | 2006-12-21 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法、及び基板処理装置 |
US20060278524A1 (en) | 2005-06-14 | 2006-12-14 | Stowell Michael W | System and method for modulating power signals to control sputtering |
JP4853857B2 (ja) | 2005-06-15 | 2012-01-11 | 東京エレクトロン株式会社 | 基板の処理方法,コンピュータ読み取り可能な記録媒体及び基板処理装置 |
JP4753173B2 (ja) | 2005-06-17 | 2011-08-24 | 株式会社フジキン | 流体制御装置 |
US7473655B2 (en) | 2005-06-17 | 2009-01-06 | Applied Materials, Inc. | Method for silicon based dielectric chemical vapor deposition |
JP4728708B2 (ja) | 2005-06-17 | 2011-07-20 | 日本電気株式会社 | 配線基板及びその製造方法 |
US7648927B2 (en) | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US20060286774A1 (en) | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7651955B2 (en) | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7601652B2 (en) | 2005-06-21 | 2009-10-13 | Applied Materials, Inc. | Method for treating substrates and films with photoexcitation |
US20060286819A1 (en) | 2005-06-21 | 2006-12-21 | Applied Materials, Inc. | Method for silicon based dielectric deposition and clean with photoexcitation |
JP2007005582A (ja) | 2005-06-24 | 2007-01-11 | Asm Japan Kk | 基板搬送装置及びそれを搭載した半導体基板製造装置 |
US7575990B2 (en) | 2005-07-01 | 2009-08-18 | Macronix International Co., Ltd. | Method of forming self-aligned contacts and local interconnects |
WO2007008653A2 (en) | 2005-07-08 | 2007-01-18 | Aviza Technology, Inc. | Method for depositing silicon-containing films |
US8771806B2 (en) | 2005-07-09 | 2014-07-08 | Bang-Kwon Kang | Surface coating method for hydrophobic and superhydrophobic treatment in atmospheric pressure plasma |
US20070010072A1 (en) | 2005-07-09 | 2007-01-11 | Aviza Technology, Inc. | Uniform batch film deposition process and films so produced |
JP2009500869A (ja) | 2005-07-11 | 2009-01-08 | ブルックス オートメーション インコーポレイテッド | オンザフライ(onthefly)ワークピースセンタリングを備えた装置 |
US7579285B2 (en) | 2005-07-11 | 2009-08-25 | Imec | Atomic layer deposition method for depositing a layer |
US7762755B2 (en) | 2005-07-11 | 2010-07-27 | Brooks Automation, Inc. | Equipment storage for substrate processing apparatus |
TW200702647A (en) | 2005-07-13 | 2007-01-16 | Actherm Inc | Heat conductive structure of electronic clinical thermometer and clinical thermometer with the same |
US7271044B2 (en) | 2005-07-21 | 2007-09-18 | International Business Machines Corporation | CMOS (complementary metal oxide semiconductor) technology |
US7314838B2 (en) | 2005-07-21 | 2008-01-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a high density dielectric film by chemical vapor deposition |
JP2007035747A (ja) | 2005-07-25 | 2007-02-08 | Sumitomo Electric Ind Ltd | ウェハ保持体およびそれを搭載したウェハプローバ |
JP2007035899A (ja) | 2005-07-27 | 2007-02-08 | Sumitomo Electric Ind Ltd | ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ |
TWI313486B (en) | 2005-07-28 | 2009-08-11 | Nuflare Technology Inc | Position measurement apparatus and method and writing apparatus and method |
TWI327339B (en) | 2005-07-29 | 2010-07-11 | Nuflare Technology Inc | Vapor phase growing apparatus and vapor phase growing method |
US20070028842A1 (en) | 2005-08-02 | 2007-02-08 | Makoto Inagawa | Vacuum chamber bottom |
US20090045829A1 (en) | 2005-08-04 | 2009-02-19 | Sumitomo Electric Industries, Ltd. | Wafer holder for wafer prober and wafer prober equipped with same |
CN101238095B (zh) | 2005-08-04 | 2011-08-10 | 东曹株式会社 | 含有金属的化合物,其制备方法、含有金属的薄膜和其形成方法 |
US20070037412A1 (en) | 2005-08-05 | 2007-02-15 | Tokyo Electron Limited | In-situ atomic layer deposition |
KR20070110910A (ko) | 2005-08-05 | 2007-11-20 | 동경 엘렉트론 주식회사 | 기판 처리 장치 및 기판 탑재대 |
US7335611B2 (en) | 2005-08-08 | 2008-02-26 | Applied Materials, Inc. | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer |
US7312148B2 (en) | 2005-08-08 | 2007-12-25 | Applied Materials, Inc. | Copper barrier reflow process employing high speed optical annealing |
US7429532B2 (en) | 2005-08-08 | 2008-09-30 | Applied Materials, Inc. | Semiconductor substrate process using an optically writable carbon-containing mask |
US7323401B2 (en) | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
US7229873B2 (en) | 2005-08-10 | 2007-06-12 | Texas Instruments Incorporated | Process for manufacturing dual work function metal gates in a microelectronics device |
JP4666215B2 (ja) | 2005-08-10 | 2011-04-06 | 株式会社ダイフク | 物品搬送装置 |
WO2007020874A1 (ja) | 2005-08-16 | 2007-02-22 | Hitachi Kokusai Electric Inc. | 薄膜形成方法および半導体デバイスの製造方法 |
US7718225B2 (en) | 2005-08-17 | 2010-05-18 | Applied Materials, Inc. | Method to control semiconductor film deposition characteristics |
WO2007024094A1 (en) | 2005-08-24 | 2007-03-01 | Electronics And Telecommunications Research Institute | Method of manufacturing vanadium oxide thin film |
US8123968B2 (en) | 2005-08-25 | 2012-02-28 | Round Rock Research, Llc | Multiple deposition for integration of spacers in pitch multiplication process |
USD557226S1 (en) | 2005-08-25 | 2007-12-11 | Hitachi High-Technologies Corporation | Electrode cover for a plasma processing apparatus |
US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US7393736B2 (en) | 2005-08-29 | 2008-07-01 | Micron Technology, Inc. | Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics |
JP4815600B2 (ja) | 2005-09-06 | 2011-11-16 | 株式会社テラセミコン | 多結晶シリコン薄膜製造方法及びその製造装置 |
US20070056843A1 (en) | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones |
US20070056850A1 (en) | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Large-area magnetron sputtering chamber with individually controlled sputtering zones |
US20070066084A1 (en) | 2005-09-21 | 2007-03-22 | Cory Wajda | Method and system for forming a layer with controllable spstial variation |
JP2007088113A (ja) | 2005-09-21 | 2007-04-05 | Sony Corp | 半導体装置の製造方法 |
JP5017950B2 (ja) | 2005-09-21 | 2012-09-05 | 株式会社Sumco | エピタキシャル成長装置の温度管理方法 |
US20070065578A1 (en) | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
US7578616B2 (en) | 2005-09-22 | 2009-08-25 | Lam Research Corporation | Apparatus for determining a temperature of a substrate and methods therefor |
US7691204B2 (en) | 2005-09-30 | 2010-04-06 | Applied Materials, Inc. | Film formation apparatus and methods including temperature and emissivity/pattern compensation |
US7785658B2 (en) | 2005-10-07 | 2010-08-31 | Asm Japan K.K. | Method for forming metal wiring structure |
US7754906B2 (en) | 2005-10-07 | 2010-07-13 | Air Products And Chemicals, Inc. | Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides |
WO2007043528A1 (ja) | 2005-10-12 | 2007-04-19 | Matsushita Electric Industrial Co., Ltd. | プラズマ処理装置、プラズマ処理方法、及びトレイ |
US7294581B2 (en) | 2005-10-17 | 2007-11-13 | Applied Materials, Inc. | Method for fabricating silicon nitride spacer structures |
US7691205B2 (en) | 2005-10-18 | 2010-04-06 | Asm Japan K.K. | Substrate-supporting device |
US8993055B2 (en) | 2005-10-27 | 2015-03-31 | Asm International N.V. | Enhanced thin film deposition |
US7906910B2 (en) | 2005-10-27 | 2011-03-15 | Luxim Corporation | Plasma lamp with conductive material positioned relative to RF feed |
US7638951B2 (en) | 2005-10-27 | 2009-12-29 | Luxim Corporation | Plasma lamp with stable feedback amplification and method therefor |
US7994721B2 (en) | 2005-10-27 | 2011-08-09 | Luxim Corporation | Plasma lamp and methods using a waveguide body and protruding bulb |
DE102005051994B4 (de) | 2005-10-31 | 2011-12-01 | Globalfoundries Inc. | Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius |
TWI331770B (en) | 2005-11-04 | 2010-10-11 | Applied Materials Inc | Apparatus for plasma-enhanced atomic layer deposition |
US7695808B2 (en) | 2005-11-07 | 2010-04-13 | 3M Innovative Properties Company | Thermal transfer coating |
US7622378B2 (en) | 2005-11-09 | 2009-11-24 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US7561982B2 (en) | 2005-11-10 | 2009-07-14 | Shake Awake Products, LLC | Physical attribute recording method and system |
JP4940635B2 (ja) | 2005-11-14 | 2012-05-30 | 東京エレクトロン株式会社 | 加熱装置、熱処理装置及び記憶媒体 |
GB2432363B (en) | 2005-11-16 | 2010-06-23 | Epichem Ltd | Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition |
KR100660890B1 (ko) | 2005-11-16 | 2006-12-26 | 삼성전자주식회사 | Ald를 이용한 이산화실리콘막 형성 방법 |
WO2007058120A1 (ja) | 2005-11-18 | 2007-05-24 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法および基板処理装置 |
US7897217B2 (en) | 2005-11-18 | 2011-03-01 | Tokyo Electron Limited | Method and system for performing plasma enhanced atomic layer deposition |
US20070116873A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
US20070116888A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Method and system for performing different deposition processes within a single chamber |
US7629277B2 (en) | 2005-11-23 | 2009-12-08 | Honeywell International Inc. | Frag shield |
US7912439B2 (en) | 2005-11-25 | 2011-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and operating method thereof |
US20070125762A1 (en) | 2005-12-01 | 2007-06-07 | Applied Materials, Inc. | Multi-zone resistive heater |
US7862683B2 (en) | 2005-12-02 | 2011-01-04 | Tokyo Electron Limited | Chamber dry cleaning |
US7857506B2 (en) | 2005-12-05 | 2010-12-28 | Sencal Llc | Disposable, pre-calibrated, pre-validated sensors for use in bio-processing applications |
US7963917B2 (en) | 2005-12-05 | 2011-06-21 | Echo Therapeutics, Inc. | System and method for continuous non-invasive glucose monitoring |
US8003919B2 (en) | 2005-12-06 | 2011-08-23 | Dainippon Screen Mfg. Co., Ltd. | Substrate heat treatment apparatus |
JP4666496B2 (ja) | 2005-12-07 | 2011-04-06 | 大日本スクリーン製造株式会社 | 基板熱処理装置 |
US7592251B2 (en) | 2005-12-08 | 2009-09-22 | Micron Technology, Inc. | Hafnium tantalum titanium oxide films |
US7381644B1 (en) | 2005-12-23 | 2008-06-03 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
JP4629574B2 (ja) | 2005-12-27 | 2011-02-09 | 日本発條株式会社 | 基板支持装置と、その製造方法 |
KR101296911B1 (ko) | 2005-12-28 | 2013-08-14 | 엘지디스플레이 주식회사 | 평판표시소자의 제조장치 및 그의 정전기량 검출장치 및검출방법 |
TWM292692U (en) | 2005-12-29 | 2006-06-21 | Powerchip Semiconductor Corp | Thermocouple apparatus |
TWI284390B (en) | 2006-01-10 | 2007-07-21 | Ind Tech Res Inst | Manufacturing method of charge store device |
US8088248B2 (en) | 2006-01-11 | 2012-01-03 | Lam Research Corporation | Gas switching section including valves having different flow coefficients for gas distribution system |
JP5324026B2 (ja) | 2006-01-18 | 2013-10-23 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理装置の制御方法 |
JP2007191792A (ja) | 2006-01-19 | 2007-08-02 | Atto Co Ltd | ガス分離型シャワーヘッド |
WO2007084493A2 (en) | 2006-01-19 | 2007-07-26 | Asm America, Inc. | High temperature ald inlet manifold |
US20080254220A1 (en) | 2006-01-20 | 2008-10-16 | Tokyo Electron Limited | Plasma processing apparatus |
US20070173071A1 (en) | 2006-01-20 | 2007-07-26 | International Business Machines Corporation | SiCOH dielectric |
US8673413B2 (en) | 2006-01-27 | 2014-03-18 | Tosoh Finechem Corporation | Method for packing solid organometallic compound and packed container |
JP4854317B2 (ja) | 2006-01-31 | 2012-01-18 | 東京エレクトロン株式会社 | 基板処理方法 |
US7736437B2 (en) | 2006-02-03 | 2010-06-15 | Integrated Materials, Incorporated | Baffled liner cover |
US8057603B2 (en) | 2006-02-13 | 2011-11-15 | Tokyo Electron Limited | Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber |
US20070187363A1 (en) | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
JP2007211326A (ja) | 2006-02-13 | 2007-08-23 | Nec Electronics Corp | 成膜装置および成膜方法 |
KR101186740B1 (ko) | 2006-02-17 | 2012-09-28 | 삼성전자주식회사 | 뱅크형성 방법 및 이에 의해 형성된 뱅크를 함유하는 유기박막 트랜지스터 |
KR20070084683A (ko) | 2006-02-21 | 2007-08-27 | 국민대학교산학협력단 | 분자층 증착법 |
US20070207275A1 (en) | 2006-02-21 | 2007-09-06 | Applied Materials, Inc. | Enhancement of remote plasma source clean for dielectric films |
US7354849B2 (en) | 2006-02-28 | 2008-04-08 | Intel Corporation | Catalytically enhanced atomic layer deposition process |
WO2007105431A1 (ja) | 2006-03-07 | 2007-09-20 | Hitachi Kokusai Electric Inc. | 基板処理装置および基板処理方法 |
CN101395453B (zh) | 2006-03-07 | 2010-09-29 | 喜开理株式会社 | 气体流量检验单元 |
US7794546B2 (en) | 2006-03-08 | 2010-09-14 | Tokyo Electron Limited | Sealing device and method for a processing system |
US7740705B2 (en) | 2006-03-08 | 2010-06-22 | Tokyo Electron Limited | Exhaust apparatus configured to reduce particle contamination in a deposition system |
US7460003B2 (en) | 2006-03-09 | 2008-12-02 | International Business Machines Corporation | Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer |
US7494882B2 (en) | 2006-03-10 | 2009-02-24 | Texas Instruments Incorporated | Manufacturing a semiconductive device using a controlled atomic layer removal process |
KR20070093493A (ko) | 2006-03-14 | 2007-09-19 | 엘지이노텍 주식회사 | 서셉터 및 반도체 제조장치 |
US8268078B2 (en) | 2006-03-16 | 2012-09-18 | Tokyo Electron Limited | Method and apparatus for reducing particle contamination in a deposition system |
US20070218200A1 (en) | 2006-03-16 | 2007-09-20 | Kenji Suzuki | Method and apparatus for reducing particle formation in a vapor distribution system |
US7692171B2 (en) | 2006-03-17 | 2010-04-06 | Andrzei Kaszuba | Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors |
US7566891B2 (en) | 2006-03-17 | 2009-07-28 | Applied Materials, Inc. | Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors |
US7410915B2 (en) | 2006-03-23 | 2008-08-12 | Asm Japan K.K. | Method of forming carbon polymer film using plasma CVD |
US20070234955A1 (en) | 2006-03-29 | 2007-10-11 | Tokyo Electron Limited | Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system |
JP2007266464A (ja) | 2006-03-29 | 2007-10-11 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US8951478B2 (en) | 2006-03-30 | 2015-02-10 | Applied Materials, Inc. | Ampoule with a thermally conductive coating |
US20070287301A1 (en) | 2006-03-31 | 2007-12-13 | Huiwen Xu | Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics |
WO2007115257A2 (en) | 2006-03-31 | 2007-10-11 | Mesoscribe Technologies, Inc. | Thermocouples |
US7780865B2 (en) | 2006-03-31 | 2010-08-24 | Applied Materials, Inc. | Method to improve the step coverage and pattern loading for dielectric films |
US8097300B2 (en) | 2006-03-31 | 2012-01-17 | Tokyo Electron Limited | Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition |
US8012442B2 (en) | 2006-03-31 | 2011-09-06 | Tokyo Electron Limited | Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition |
US20070237697A1 (en) | 2006-03-31 | 2007-10-11 | Tokyo Electron Limited | Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition |
US7645484B2 (en) | 2006-03-31 | 2010-01-12 | Tokyo Electron Limited | Method of forming a metal carbide or metal carbonitride film having improved adhesion |
US7396491B2 (en) | 2006-04-06 | 2008-07-08 | Osram Sylvania Inc. | UV-emitting phosphor and lamp containing same |
US7902074B2 (en) | 2006-04-07 | 2011-03-08 | Micron Technology, Inc. | Simplified pitch doubling process flow |
US8399349B2 (en) | 2006-04-18 | 2013-03-19 | Air Products And Chemicals, Inc. | Materials and methods of forming controlled void |
US20070248767A1 (en) | 2006-04-19 | 2007-10-25 | Asm Japan K.K. | Method of self-cleaning of carbon-based film |
US7410852B2 (en) | 2006-04-21 | 2008-08-12 | International Business Machines Corporation | Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors |
FR2900276B1 (fr) | 2006-04-25 | 2008-09-12 | St Microelectronics Sa | Depot peald d'un materiau a base de silicium |
US20070251456A1 (en) | 2006-04-27 | 2007-11-01 | Applied Materials, Inc., A Delaware Corporation | Composite heater and chill plate |
US7537804B2 (en) | 2006-04-28 | 2009-05-26 | Micron Technology, Inc. | ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates |
US8231799B2 (en) | 2006-04-28 | 2012-07-31 | Applied Materials, Inc. | Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone |
US7547633B2 (en) | 2006-05-01 | 2009-06-16 | Applied Materials, Inc. | UV assisted thermal processing |
US7997795B2 (en) | 2006-05-02 | 2011-08-16 | Watlow Electric Manufacturing Company | Temperature sensors and methods of manufacture thereof |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US20070266945A1 (en) | 2006-05-16 | 2007-11-22 | Asm Japan K.K. | Plasma cvd apparatus equipped with plasma blocking insulation plate |
US7875312B2 (en) | 2006-05-23 | 2011-01-25 | Air Products And Chemicals, Inc. | Process for producing silicon oxide films for organoaminosilane precursors |
KR101368580B1 (ko) | 2006-05-26 | 2014-02-28 | 이네오스 매뉴팩처링 벨기에 엔브이 | 중합을 위한 루프형 반응기 |
US7825038B2 (en) | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
US7790634B2 (en) | 2006-05-30 | 2010-09-07 | Applied Materials, Inc | Method for depositing and curing low-k films for gapfill and conformal film applications |
JP2007324350A (ja) | 2006-05-31 | 2007-12-13 | Tokyo Electron Ltd | 熱処理方法および熱処理装置、ならびに基板処理装置 |
CN101460657A (zh) | 2006-06-02 | 2009-06-17 | 乔治洛德方法研究和开发液化空气有限公司 | 基于新型钛、锆和铪前体的高k介电膜的形成方法及其用于半导体制造的用途 |
US7623940B2 (en) | 2006-06-02 | 2009-11-24 | The Boeing Company | Direct-manufactured duct interconnects |
US20070281105A1 (en) | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
US20070281082A1 (en) | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Flash Heating in Atomic Layer Deposition |
US20070277735A1 (en) | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
US8278176B2 (en) | 2006-06-07 | 2012-10-02 | Asm America, Inc. | Selective epitaxial formation of semiconductor films |
US20080018004A1 (en) | 2006-06-09 | 2008-01-24 | Air Products And Chemicals, Inc. | High Flow GaCl3 Delivery |
US20090324971A1 (en) | 2006-06-16 | 2009-12-31 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma |
JP5045000B2 (ja) | 2006-06-20 | 2012-10-10 | 東京エレクトロン株式会社 | 成膜装置、ガス供給装置、成膜方法及び記憶媒体 |
US7625820B1 (en) | 2006-06-21 | 2009-12-01 | Novellus Systems, Inc. | Method of selective coverage of high aspect ratio structures with a conformal film |
US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
US7554103B2 (en) | 2006-06-26 | 2009-06-30 | Applied Materials, Inc. | Increased tool utilization/reduction in MWBC for UV curing chamber |
US7494272B2 (en) | 2006-06-27 | 2009-02-24 | Applied Materials, Inc. | Dynamic surface annealing using addressable laser array with pyrometry feedback |
US20080153311A1 (en) | 2006-06-28 | 2008-06-26 | Deenesh Padhi | Method for depositing an amorphous carbon film with improved density and step coverage |
US7867578B2 (en) | 2006-06-28 | 2011-01-11 | Applied Materials, Inc. | Method for depositing an amorphous carbon film with improved density and step coverage |
US7501355B2 (en) | 2006-06-29 | 2009-03-10 | Applied Materials, Inc. | Decreasing the etch rate of silicon nitride by carbon addition |
US7416989B1 (en) | 2006-06-30 | 2008-08-26 | Novellus Systems, Inc. | Adsorption based material removal process |
WO2008004278A1 (fr) | 2006-07-04 | 2008-01-10 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Procédé et dispositif de concentration / dilution de gaz spécifique |
JP4193883B2 (ja) | 2006-07-05 | 2008-12-10 | 住友電気工業株式会社 | 有機金属気相成長装置 |
JP5027573B2 (ja) | 2006-07-06 | 2012-09-19 | 株式会社小松製作所 | 温度センサおよび温調装置 |
KR100799735B1 (ko) | 2006-07-10 | 2008-02-01 | 삼성전자주식회사 | 금속 산화물 형성 방법 및 이를 수행하기 위한 장치 |
WO2008008737A2 (en) | 2006-07-10 | 2008-01-17 | Asyst Technologies, Inc. | Variable lot size load port |
KR100782484B1 (ko) | 2006-07-13 | 2007-12-05 | 삼성전자주식회사 | 열처리 설비 |
US7981815B2 (en) | 2006-07-20 | 2011-07-19 | Hitachi Kokusai Electric Inc. | Semiconductor device producing method and substrate processing apparatus |
US7795160B2 (en) | 2006-07-21 | 2010-09-14 | Asm America Inc. | ALD of metal silicate films |
KR100791334B1 (ko) | 2006-07-26 | 2008-01-07 | 삼성전자주식회사 | 원자층 증착법을 이용한 금속 산화막 형성 방법 |
FR2904328B1 (fr) | 2006-07-27 | 2008-10-24 | St Microelectronics Sa | Depot par adsorption sous un champ electrique |
US8187679B2 (en) | 2006-07-29 | 2012-05-29 | Lotus Applied Technology, Llc | Radical-enhanced atomic layer deposition system and method |
JP2008041734A (ja) | 2006-08-02 | 2008-02-21 | Sony Corp | 半導体装置および半導体装置の製造方法 |
US7749879B2 (en) | 2006-08-03 | 2010-07-06 | Micron Technology, Inc. | ALD of silicon films on germanium |
US8080282B2 (en) | 2006-08-08 | 2011-12-20 | Asm Japan K.K. | Method for forming silicon carbide film containing oxygen |
GB0615722D0 (en) | 2006-08-08 | 2006-09-20 | Boc Group Plc | Apparatus for conveying a waste stream |
US7514375B1 (en) | 2006-08-08 | 2009-04-07 | Novellus Systems, Inc. | Pulsed bias having high pulse frequency for filling gaps with dielectric material |
TW200814131A (en) | 2006-08-11 | 2008-03-16 | Schott Ag | External electrode fluorescent lamp with optimized operating efficiency |
US20110027999A1 (en) | 2006-08-16 | 2011-02-03 | Freescale Semiconductor, Inc. | Etch method in the manufacture of an integrated circuit |
KR101466998B1 (ko) | 2006-08-23 | 2014-12-01 | 가부시키가이샤 호리바 에스텍 | 집적형 가스 패널 장치 |
JP4961895B2 (ja) | 2006-08-25 | 2012-06-27 | 東京エレクトロン株式会社 | ウェハ搬送装置、ウェハ搬送方法及び記憶媒体 |
JP4904995B2 (ja) | 2006-08-28 | 2012-03-28 | シンフォニアテクノロジー株式会社 | ロードポート装置 |
US7690881B2 (en) | 2006-08-30 | 2010-04-06 | Asm Japan K.K. | Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus |
US20080260963A1 (en) | 2007-04-17 | 2008-10-23 | Hyungsuk Alexander Yoon | Apparatus and method for pre and post treatment of atomic layer deposition |
KR100753020B1 (ko) | 2006-08-30 | 2007-08-30 | 한국화학연구원 | 원자층 증착법을 이용한 비휘발성 부유 게이트 메모리소자를 위한 나노적층체의 제조방법 |
US7611980B2 (en) | 2006-08-30 | 2009-11-03 | Micron Technology, Inc. | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures |
US7605030B2 (en) | 2006-08-31 | 2009-10-20 | Micron Technology, Inc. | Hafnium tantalum oxynitride high-k dielectric and metal gates |
US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
JP4943780B2 (ja) | 2006-08-31 | 2012-05-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
US20080057659A1 (en) | 2006-08-31 | 2008-03-06 | Micron Technology, Inc. | Hafnium aluminium oxynitride high-K dielectric and metal gates |
US7544604B2 (en) | 2006-08-31 | 2009-06-09 | Micron Technology, Inc. | Tantalum lanthanide oxynitride films |
JP5138253B2 (ja) | 2006-09-05 | 2013-02-06 | 東京エレクトロン株式会社 | アニール装置 |
ATE474215T1 (de) | 2006-09-06 | 2010-07-15 | Kistler Holding Ag | Temperatursensor mit bearbeitbarer front |
JP4762835B2 (ja) | 2006-09-07 | 2011-08-31 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、プログラムおよびプログラム記録媒体 |
JP2008066159A (ja) | 2006-09-08 | 2008-03-21 | Noritsu Koki Co Ltd | プラズマ発生装置およびそれを用いるワーク処理装置 |
KR100761857B1 (ko) | 2006-09-08 | 2007-09-28 | 삼성전자주식회사 | 반도체 소자의 미세패턴 형성방법 및 이를 이용한 반도체소자의 제조방법 |
USD613829S1 (en) | 2006-09-13 | 2010-04-13 | Hayward Industries, Inc. | Circular suction outlet assembly cover |
US7789965B2 (en) | 2006-09-19 | 2010-09-07 | Asm Japan K.K. | Method of cleaning UV irradiation chamber |
US7976898B2 (en) | 2006-09-20 | 2011-07-12 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
US7718553B2 (en) | 2006-09-21 | 2010-05-18 | Asm Japan K.K. | Method for forming insulation film having high density |
JP2008074963A (ja) | 2006-09-21 | 2008-04-03 | Fujifilm Corp | 組成物、膜、およびその製造方法 |
US7740437B2 (en) | 2006-09-22 | 2010-06-22 | Asm International N.V. | Processing system with increased cassette storage capacity |
US7723648B2 (en) | 2006-09-25 | 2010-05-25 | Tokyo Electron Limited | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
JP4814038B2 (ja) | 2006-09-25 | 2011-11-09 | 株式会社日立国際電気 | 基板処理装置および反応容器の着脱方法 |
USD634329S1 (en) | 2006-09-26 | 2011-03-15 | Margareta Wastrom | Computer platform with forearm support |
WO2008039943A2 (en) | 2006-09-27 | 2008-04-03 | Vserv Tech | Wafer processing system with dual wafer robots capable of asynchronous motion |
US7476291B2 (en) | 2006-09-28 | 2009-01-13 | Lam Research Corporation | High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation |
TWI462179B (zh) | 2006-09-28 | 2014-11-21 | Tokyo Electron Ltd | 用以形成氧化矽膜之成膜方法與裝置 |
US7767262B2 (en) | 2006-09-29 | 2010-08-03 | Tokyo Electron Limited | Nitrogen profile engineering in nitrided high dielectric constant films |
DE102006046374B4 (de) | 2006-09-29 | 2010-11-11 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Reduzieren der Lackvergiftung während des Strukturierens von Siliziumnitridschichten in einem Halbleiterbauelement |
TW200822253A (en) | 2006-10-02 | 2008-05-16 | Matsushita Electric Ind Co Ltd | Component crimping apparatus control method, component crimping apparatus, and measuring tool |
USD593969S1 (en) | 2006-10-10 | 2009-06-09 | Tokyo Electron Limited | Processing chamber for manufacturing semiconductors |
US8986456B2 (en) | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
WO2008045972A2 (en) | 2006-10-10 | 2008-04-17 | Asm America, Inc. | Precursor delivery system |
CN100451163C (zh) | 2006-10-18 | 2009-01-14 | 中微半导体设备(上海)有限公司 | 用于半导体工艺件处理反应器的气体分布装置及其反应器 |
JP2008108991A (ja) | 2006-10-27 | 2008-05-08 | Daihen Corp | ワーク保持機構 |
US7851232B2 (en) | 2006-10-30 | 2010-12-14 | Novellus Systems, Inc. | UV treatment for carbon-containing low-k dielectric repair in semiconductor processing |
US7611751B2 (en) | 2006-11-01 | 2009-11-03 | Asm America, Inc. | Vapor deposition of metal carbide films |
US7727864B2 (en) | 2006-11-01 | 2010-06-01 | Asm America, Inc. | Controlled composition using plasma-enhanced atomic layer deposition |
US7888273B1 (en) | 2006-11-01 | 2011-02-15 | Novellus Systems, Inc. | Density gradient-free gap fill |
US7955516B2 (en) | 2006-11-02 | 2011-06-07 | Applied Materials, Inc. | Etching of nano-imprint templates using an etch reactor |
JP2008117903A (ja) | 2006-11-02 | 2008-05-22 | Toshiba Corp | 半導体装置の製造方法 |
WO2008056742A1 (fr) | 2006-11-09 | 2008-05-15 | Ulvac, Inc. | Procédé de fabrication de film barrière |
WO2008056295A1 (en) | 2006-11-09 | 2008-05-15 | Nxp B.V. | A semiconductor device and a method of manufacturing thereof |
US7749574B2 (en) | 2006-11-14 | 2010-07-06 | Applied Materials, Inc. | Low temperature ALD SiO2 |
US20080179104A1 (en) | 2006-11-14 | 2008-07-31 | Smith International, Inc. | Nano-reinforced wc-co for improved properties |
US7776395B2 (en) | 2006-11-14 | 2010-08-17 | Applied Materials, Inc. | Method of depositing catalyst assisted silicates of high-k materials |
US7671134B2 (en) | 2006-11-15 | 2010-03-02 | Brady Worldwide, Inc. | Compositions with improved adhesion to low surface energy substrates |
US7976634B2 (en) | 2006-11-21 | 2011-07-12 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems |
US20080118334A1 (en) | 2006-11-22 | 2008-05-22 | Bonora Anthony C | Variable pitch storage shelves |
US20080121177A1 (en) | 2006-11-28 | 2008-05-29 | Applied Materials, Inc. | Dual top gas feed through distributor for high density plasma chamber |
US20080124946A1 (en) | 2006-11-28 | 2008-05-29 | Air Products And Chemicals, Inc. | Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films |
US7807575B2 (en) | 2006-11-29 | 2010-10-05 | Micron Technology, Inc. | Methods to reduce the critical dimension of semiconductor devices |
US20080132046A1 (en) | 2006-12-04 | 2008-06-05 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping With Electronically Controllable Implant Angle |
US20080193673A1 (en) | 2006-12-05 | 2008-08-14 | Applied Materials, Inc. | Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
US7906174B1 (en) | 2006-12-07 | 2011-03-15 | Novellus Systems, Inc. | PECVD methods for producing ultra low-k dielectric films using UV treatment |
US20080142483A1 (en) | 2006-12-07 | 2008-06-19 | Applied Materials, Inc. | Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills |
WO2008073763A2 (en) | 2006-12-07 | 2008-06-19 | Innovalight, Inc. | Methods for creating a densified group iv semiconductor nanoparticle thin film |
US20080202689A1 (en) | 2006-12-08 | 2008-08-28 | Tes Co., Ltd. | Plasma processing apparatus |
US20080173238A1 (en) | 2006-12-12 | 2008-07-24 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel |
US7960236B2 (en) | 2006-12-12 | 2011-06-14 | Applied Materials, Inc. | Phosphorus containing Si epitaxial layers in N-type source/drain junctions |
EP2094460B1 (en) | 2006-12-19 | 2011-07-13 | Philips Intellectual Property & Standards GmbH | System for and method of heating objects in a production line |
US8178436B2 (en) | 2006-12-21 | 2012-05-15 | Intel Corporation | Adhesion and electromigration performance at an interface between a dielectric and metal |
US8120114B2 (en) | 2006-12-27 | 2012-02-21 | Intel Corporation | Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate |
JP2008166360A (ja) | 2006-12-27 | 2008-07-17 | Hitachi Ltd | 半導体集積回路装置 |
JP4553891B2 (ja) | 2006-12-27 | 2010-09-29 | シャープ株式会社 | 半導体層製造方法 |
JP2008172083A (ja) | 2007-01-12 | 2008-07-24 | Sharp Corp | 気相成長装置および気相成長方法 |
JP5108489B2 (ja) | 2007-01-16 | 2012-12-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
DE102007003416A1 (de) | 2007-01-16 | 2008-07-17 | Hansgrohe Ag | Duschvorrichtung |
KR20090106617A (ko) | 2007-01-19 | 2009-10-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라스마 함침 챔버 |
DE102007002962B3 (de) | 2007-01-19 | 2008-07-31 | Qimonda Ag | Verfahren zum Herstellen einer dielektrischen Schicht und zum Herstellen eines Kondensators |
JP5109376B2 (ja) | 2007-01-22 | 2012-12-26 | 東京エレクトロン株式会社 | 加熱装置、加熱方法及び記憶媒体 |
US20080191193A1 (en) | 2007-01-22 | 2008-08-14 | Xuegeng Li | In situ modification of group iv nanoparticles using gas phase nanoparticle reactors |
US7550090B2 (en) | 2007-01-23 | 2009-06-23 | Applied Materials, Inc. | Oxygen plasma clean to remove carbon species deposited on a glass dome surface |
US7833353B2 (en) | 2007-01-24 | 2010-11-16 | Asm Japan K.K. | Liquid material vaporization apparatus for semiconductor processing apparatus |
US20080173239A1 (en) | 2007-01-24 | 2008-07-24 | Yuri Makarov | Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor |
CN101589459A (zh) | 2007-01-26 | 2009-11-25 | 应用材料股份有限公司 | 用于层间介电气隙的pevcd沉积牺牲聚合物薄膜的紫外光固化 |
US20080179715A1 (en) | 2007-01-30 | 2008-07-31 | Micron Technology, Inc. | Shallow trench isolation using atomic layer deposition during fabrication of a semiconductor device |
JP4270284B2 (ja) | 2007-01-30 | 2009-05-27 | トヨタ自動車株式会社 | 車輪状態監視システムおよび車輪状態検出装置 |
JP2008192643A (ja) | 2007-01-31 | 2008-08-21 | Tokyo Electron Ltd | 基板処理装置 |
DE102007004867B4 (de) | 2007-01-31 | 2009-07-30 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid |
US7500397B2 (en) | 2007-02-15 | 2009-03-10 | Air Products And Chemicals, Inc. | Activated chemical process for enhancing material properties of dielectric films |
USD576001S1 (en) | 2007-02-16 | 2008-09-02 | Brenda Brunderman | Faux brick tool |
JP2008202107A (ja) | 2007-02-21 | 2008-09-04 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP4805862B2 (ja) | 2007-02-21 | 2011-11-02 | 富士通セミコンダクター株式会社 | 基板処理装置、基板処理方法、及び半導体装置の製造方法 |
US7871198B2 (en) | 2007-02-26 | 2011-01-18 | Battelle Energy Alliance, Llc | High-temperature thermocouples and related methods |
US20080207007A1 (en) | 2007-02-27 | 2008-08-28 | Air Products And Chemicals, Inc. | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films |
DE102007009914B4 (de) | 2007-02-28 | 2010-04-22 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterbauelement in Form eines Feldeffekttransistors mit einem Zwischenschichtdielektrikumsmaterial mit erhöhter innerer Verspannung und Verfahren zur Herstellung desselben |
US20080216077A1 (en) | 2007-03-02 | 2008-09-04 | Applied Materials, Inc. | Software sequencer for integrated substrate processing system |
US20080220619A1 (en) | 2007-03-09 | 2008-09-11 | Asm Japan K.K. | Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiation |
US8012259B2 (en) | 2007-03-09 | 2011-09-06 | Hitachi Kokusai Electric, Inc. | Substrate processing apparatus |
US7621672B2 (en) | 2007-03-19 | 2009-11-24 | Babcock & Wilcox Technical Services Y-12, Llc | Thermocouple shield |
US7833913B2 (en) | 2007-03-20 | 2010-11-16 | Tokyo Electron Limited | Method of forming crystallographically stabilized doped hafnium zirconium based films |
WO2008120459A1 (ja) | 2007-03-22 | 2008-10-09 | Panasonic Corporation | プラズマ処理装置及びプラズマ処理方法 |
US7763869B2 (en) | 2007-03-23 | 2010-07-27 | Asm Japan K.K. | UV light irradiating apparatus with liquid filter |
US7435987B1 (en) | 2007-03-27 | 2008-10-14 | Intel Corporation | Forming a type I heterostructure in a group IV semiconductor |
US20080241387A1 (en) | 2007-03-29 | 2008-10-02 | Asm International N.V. | Atomic layer deposition reactor |
US7651961B2 (en) | 2007-03-30 | 2010-01-26 | Tokyo Electron Limited | Method for forming strained silicon nitride films and a device containing such films |
ITMI20070671A1 (it) | 2007-04-02 | 2008-10-03 | St Microelectronics Srl | Architettura circuitale su base organica e relativo metodo fi realizzazione |
US8235001B2 (en) | 2007-04-02 | 2012-08-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
US20080241384A1 (en) | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
US8242028B1 (en) | 2007-04-03 | 2012-08-14 | Novellus Systems, Inc. | UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement |
KR100829759B1 (ko) | 2007-04-04 | 2008-05-15 | 삼성에스디아이 주식회사 | 카바이드 유도 탄소를 이용한 카본나노튜브 혼성체, 이를포함하는 전자 방출원 및 상기 전자 방출원을 구비한 전자방출 소자 |
WO2008127935A1 (en) | 2007-04-13 | 2008-10-23 | The Board Of Trustees Of The University Of Illinois | Metal complex compositions and methods for making metal-containing films |
JP4839405B2 (ja) | 2007-04-16 | 2011-12-21 | 株式会社アルバック | コンベアおよび成膜装置とそのメンテナンス方法 |
US8419854B2 (en) | 2007-04-17 | 2013-04-16 | Ulvac, Inc. | Film-forming apparatus |
US8357214B2 (en) | 2007-04-26 | 2013-01-22 | Trulite, Inc. | Apparatus, system, and method for generating a gas from solid reactant pouches |
JP4853374B2 (ja) | 2007-04-27 | 2012-01-11 | 東京エレクトロン株式会社 | 塗布、現像装置及びその方法並びに記憶媒体 |
US7575968B2 (en) | 2007-04-30 | 2009-08-18 | Freescale Semiconductor, Inc. | Inverse slope isolation and dual surface orientation integration |
US7713874B2 (en) | 2007-05-02 | 2010-05-11 | Asm America, Inc. | Periodic plasma annealing in an ALD-type process |
US8110099B2 (en) | 2007-05-09 | 2012-02-07 | Contech Stormwater Solutions Inc. | Stormwater filter assembly |
US7750429B2 (en) | 2007-05-15 | 2010-07-06 | International Business Machines Corporation | Self-aligned and extended inter-well isolation structure |
JP5103056B2 (ja) | 2007-05-15 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
GB0709723D0 (en) | 2007-05-22 | 2007-06-27 | Goodrich Control Sys Ltd | Temperature sensing |
US7874726B2 (en) | 2007-05-24 | 2011-01-25 | Asm America, Inc. | Thermocouple |
US20080299326A1 (en) | 2007-05-30 | 2008-12-04 | Asm Japan K.K. | Plasma cvd apparatus having non-metal susceptor |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
WO2008150484A1 (en) | 2007-05-31 | 2008-12-11 | Applied Materials, Inc. | Methods and apparatus for extending the reach of a dual scara robot linkage |
US7807578B2 (en) | 2007-06-01 | 2010-10-05 | Applied Materials, Inc. | Frequency doubling using spacer mask |
US20090017631A1 (en) | 2007-06-01 | 2009-01-15 | Bencher Christopher D | Self-aligned pillar patterning using multiple spacer masks |
US8084352B2 (en) | 2007-06-04 | 2011-12-27 | Panasonic Corporation | Method of manufacturing semiconductor device |
US7781352B2 (en) | 2007-06-06 | 2010-08-24 | Asm Japan K.K. | Method for forming inorganic silazane-based dielectric film |
US8142606B2 (en) | 2007-06-07 | 2012-03-27 | Applied Materials, Inc. | Apparatus for depositing a uniform silicon film and methods for manufacturing the same |
US7955650B2 (en) | 2007-06-07 | 2011-06-07 | Asm Japan K.K. | Method for forming dielectric film using porogen gas |
US20080302303A1 (en) | 2007-06-07 | 2008-12-11 | Applied Materials, Inc. | Methods and apparatus for depositing a uniform silicon film with flow gradient designs |
US20080305014A1 (en) | 2007-06-07 | 2008-12-11 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
WO2008149989A1 (ja) | 2007-06-08 | 2008-12-11 | Tokyo Electron Limited | パターニング方法 |
US7989354B2 (en) | 2007-06-08 | 2011-08-02 | Tokyo Electron Limited | Patterning method |
JP4427562B2 (ja) | 2007-06-11 | 2010-03-10 | 株式会社東芝 | パターン形成方法 |
US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
USD575713S1 (en) | 2007-06-21 | 2008-08-26 | Ratcliffe Peter W | Vehicle accessory |
US8017182B2 (en) | 2007-06-21 | 2011-09-13 | Asm International N.V. | Method for depositing thin films by mixed pulsed CVD and ALD |
CN100590804C (zh) | 2007-06-22 | 2010-02-17 | 中芯国际集成电路制造(上海)有限公司 | 原子层沉积方法以及形成的半导体器件 |
WO2009006272A1 (en) | 2007-06-28 | 2009-01-08 | Advanced Technology Materials, Inc. | Precursors for silicon dioxide gap fill |
US20090000550A1 (en) | 2007-06-29 | 2009-01-01 | Applied Materials, Inc. | Manifold assembly |
US20090033907A1 (en) | 2007-07-05 | 2009-02-05 | Nikon Corporation | Devices and methods for decreasing residual chucking forces |
JP2009016672A (ja) | 2007-07-06 | 2009-01-22 | Tokyo Electron Ltd | 半導体装置の製造方法、半導体装置、半導体製造装置及び記憶媒体。 |
US8021514B2 (en) | 2007-07-11 | 2011-09-20 | Applied Materials, Inc. | Remote plasma source for pre-treatment of substrates prior to deposition |
US7651269B2 (en) | 2007-07-19 | 2010-01-26 | Lam Research Corporation | Temperature probes having a thermally isolated tip |
US7501292B2 (en) | 2007-07-19 | 2009-03-10 | Asm Japan K.K. | Method for managing UV irradiation for curing semiconductor substrate |
JP4900110B2 (ja) | 2007-07-20 | 2012-03-21 | 東京エレクトロン株式会社 | 薬液気化タンク及び薬液処理システム |
US8008166B2 (en) | 2007-07-26 | 2011-08-30 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate surface |
US7720560B2 (en) | 2007-07-26 | 2010-05-18 | International Business Machines Corporation | Semiconductor manufacturing process monitoring |
JP5058084B2 (ja) | 2007-07-27 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法及びマイクロ波プラズマcvd装置 |
US8004045B2 (en) | 2007-07-27 | 2011-08-23 | Panasonic Corporation | Semiconductor device and method for producing the same |
WO2009020024A1 (ja) | 2007-08-03 | 2009-02-12 | Shin-Etsu Handotai Co., Ltd. | サセプタ及びシリコンエピタキシャルウェーハの製造方法 |
JP2009044023A (ja) | 2007-08-10 | 2009-02-26 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および基板処理装置 |
WO2009023169A1 (en) | 2007-08-10 | 2009-02-19 | Nano Terra Inc. | Structured smudge-resistant coatings and methods of making and using the same |
US20090041952A1 (en) | 2007-08-10 | 2009-02-12 | Asm Genitech Korea Ltd. | Method of depositing silicon oxide films |
US20090052498A1 (en) | 2007-08-24 | 2009-02-26 | Asm America, Inc. | Thermocouple |
US8084372B2 (en) | 2007-08-24 | 2011-12-27 | Tokyo Electron Limited | Substrate processing method and computer storage medium |
US7745352B2 (en) | 2007-08-27 | 2010-06-29 | Applied Materials, Inc. | Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process |
JP2009076881A (ja) | 2007-08-30 | 2009-04-09 | Tokyo Electron Ltd | 処理ガス供給システム及び処理装置 |
WO2009028619A1 (ja) | 2007-08-30 | 2009-03-05 | Tokyo Electron Limited | 処理ガス供給システム及び処理装置 |
US8962101B2 (en) | 2007-08-31 | 2015-02-24 | Novellus Systems, Inc. | Methods and apparatus for plasma-based deposition |
US7832354B2 (en) | 2007-09-05 | 2010-11-16 | Applied Materials, Inc. | Cathode liner with wafer edge gas injection in a plasma reactor chamber |
US7879250B2 (en) | 2007-09-05 | 2011-02-01 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection |
US8334015B2 (en) | 2007-09-05 | 2012-12-18 | Intermolecular, Inc. | Vapor based combinatorial processing |
US20100255625A1 (en) | 2007-09-07 | 2010-10-07 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma |
CA122619S (en) | 2007-10-09 | 2010-01-27 | Silvano Breda | Shower strainer |
JP5347294B2 (ja) | 2007-09-12 | 2013-11-20 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
US20090075491A1 (en) | 2007-09-13 | 2009-03-19 | Tokyo Electron Limited | Method for curing a dielectric film |
JP2010539730A (ja) | 2007-09-18 | 2010-12-16 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | シリコン含有膜を形成する方法 |
JP4986784B2 (ja) | 2007-09-18 | 2012-07-25 | 東京エレクトロン株式会社 | 処理システムの制御装置、処理システムの制御方法および制御プログラムを記憶した記憶媒体 |
US20090085156A1 (en) | 2007-09-28 | 2009-04-02 | Gilbert Dewey | Metal surface treatments for uniformly growing dielectric layers |
US20090084317A1 (en) | 2007-09-28 | 2009-04-02 | Applied Materials, Inc. | Atomic layer deposition chamber and components |
JP5236983B2 (ja) | 2007-09-28 | 2013-07-17 | 東京エレクトロン株式会社 | 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びプログラム記憶媒体 |
JP2009088421A (ja) | 2007-10-03 | 2009-04-23 | Renesas Technology Corp | 半導体装置の製造方法 |
US8041450B2 (en) | 2007-10-04 | 2011-10-18 | Asm Japan K.K. | Position sensor system for substrate transfer robot |
US7776698B2 (en) | 2007-10-05 | 2010-08-17 | Applied Materials, Inc. | Selective formation of silicon carbon epitaxial layer |
US20090090382A1 (en) | 2007-10-05 | 2009-04-09 | Asm Japan K.K. | Method of self-cleaning of carbon-based film |
US20090095221A1 (en) | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
US7867923B2 (en) | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
US7541297B2 (en) | 2007-10-22 | 2009-06-02 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
US7803722B2 (en) | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
US7615831B2 (en) | 2007-10-26 | 2009-11-10 | International Business Machines Corporation | Structure and method for fabricating self-aligned metal contacts |
US7939447B2 (en) | 2007-10-26 | 2011-05-10 | Asm America, Inc. | Inhibitors for selective deposition of silicon containing films |
JP4730369B2 (ja) | 2007-10-30 | 2011-07-20 | 株式会社デンソー | ナビゲーションシステム |
KR101369907B1 (ko) | 2007-10-31 | 2014-03-04 | 주성엔지니어링(주) | 트랜지스터 및 그 제조 방법 |
RU2470065C2 (ru) | 2007-10-31 | 2012-12-20 | Чайна Петролеум & Кемикал Корпорейшн | Способ пассивации для установки непрерывного риформинга (варианты) |
US7737039B2 (en) | 2007-11-01 | 2010-06-15 | Micron Technology, Inc. | Spacer process for on pitch contacts and related structures |
US20090124131A1 (en) | 2007-11-09 | 2009-05-14 | Electronic Controls Design | Thermocouple adapter |
US20090122458A1 (en) | 2007-11-14 | 2009-05-14 | Varian Semiconductor Epuipment Associated, Inc. | Embossed electrostatic chuck |
CA123273S (en) | 2007-11-19 | 2010-01-27 | Silvano Breda | Shower strainer |
CA123272S (en) | 2007-11-19 | 2010-01-27 | Silvano Breda | Shower strainer |
US8272516B2 (en) | 2007-11-19 | 2012-09-25 | Caterpillar Inc. | Fluid filter system |
KR101412144B1 (ko) | 2007-11-26 | 2014-06-26 | 삼성전자 주식회사 | 금속 배선의 제조 방법 및 이를 이용한 이미지 센서의 제조방법 |
EP2065927B1 (en) | 2007-11-27 | 2013-10-02 | Imec | Integration and manufacturing method of Cu germanide and Cu silicide as Cu capping layer |
US8021723B2 (en) | 2007-11-27 | 2011-09-20 | Asm Japan K.K. | Method of plasma treatment using amplitude-modulated RF power |
US8106588B2 (en) | 2007-11-28 | 2012-01-31 | Koninklijke Philips Electronics N.V. | Dielectric barrier discharge lamp |
KR20090055443A (ko) | 2007-11-28 | 2009-06-02 | 주식회사 케이씨텍 | 원자층 증착 장치 |
US8060252B2 (en) | 2007-11-30 | 2011-11-15 | Novellus Systems, Inc. | High throughput method of in transit wafer position correction in system using multiple robots |
US7651959B2 (en) | 2007-12-03 | 2010-01-26 | Asm Japan K.K. | Method for forming silazane-based dielectric film |
JP5464843B2 (ja) | 2007-12-03 | 2014-04-09 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法 |
US20090139657A1 (en) | 2007-12-04 | 2009-06-04 | Applied Materials, Inc. | Etch system |
KR20100102106A (ko) | 2007-12-06 | 2010-09-20 | 신에쯔 한도타이 가부시키가이샤 | 기상성장용 서셉터 및 기상성장 장치 |
US8440569B2 (en) | 2007-12-07 | 2013-05-14 | Cadence Design Systems, Inc. | Method of eliminating a lithography operation |
US7807566B2 (en) | 2007-12-07 | 2010-10-05 | Asm Japan K.K. | Method for forming dielectric SiOCH film having chemical stability |
US8628616B2 (en) | 2007-12-11 | 2014-01-14 | Sumitomo Electric Industries, Ltd. | Vapor-phase process apparatus, vapor-phase process method, and substrate |
KR100956247B1 (ko) | 2007-12-13 | 2010-05-06 | 삼성엘이디 주식회사 | 금속유기 화학기상 증착장치 |
US8003174B2 (en) | 2007-12-13 | 2011-08-23 | Asm Japan K.K. | Method for forming dielectric film using siloxane-silazane mixture |
WO2009078249A1 (ja) | 2007-12-17 | 2009-06-25 | Orc Manufacturing Co., Ltd. | 放電ランプ |
US8092606B2 (en) | 2007-12-18 | 2012-01-10 | Asm Genitech Korea Ltd. | Deposition apparatus |
JP5449189B2 (ja) | 2007-12-19 | 2014-03-19 | ラム リサーチ コーポレーション | low−k誘電体の気相修復及び細孔シーリング |
US8137463B2 (en) | 2007-12-19 | 2012-03-20 | Applied Materials, Inc. | Dual zone gas injection nozzle |
US7993057B2 (en) | 2007-12-20 | 2011-08-09 | Asm America, Inc. | Redundant temperature sensor for semiconductor processing chambers |
US8501637B2 (en) | 2007-12-21 | 2013-08-06 | Asm International N.V. | Silicon dioxide thin films by ALD |
US7989329B2 (en) | 2007-12-21 | 2011-08-02 | Applied Materials, Inc. | Removal of surface dopants from a substrate |
US7678715B2 (en) | 2007-12-21 | 2010-03-16 | Applied Materials, Inc. | Low wet etch rate silicon nitride film |
WO2009085598A2 (en) | 2007-12-21 | 2009-07-09 | Lam Research Corporation | Photoresist double patterning |
US20090197015A1 (en) | 2007-12-25 | 2009-08-06 | Applied Materials, Inc. | Method and apparatus for controlling plasma uniformity |
US8333839B2 (en) | 2007-12-27 | 2012-12-18 | Synos Technology, Inc. | Vapor deposition reactor |
US8496377B2 (en) | 2007-12-31 | 2013-07-30 | Covidien Lp | Thermometer having molded probe component |
KR101013413B1 (ko) | 2008-01-07 | 2011-02-14 | 한국과학기술연구원 | 플라즈마 표면 처리를 이용한 투명 기체 차단 필름의 제조방법 및 이로부터 제조된 투명 기체 차단 필름 |
US7935940B1 (en) | 2008-01-08 | 2011-05-03 | Novellus Systems, Inc. | Measuring in-situ UV intensity in UV cure tool |
US8129288B2 (en) * | 2008-05-02 | 2012-03-06 | Intermolecular, Inc. | Combinatorial plasma enhanced deposition techniques |
US8198567B2 (en) | 2008-01-15 | 2012-06-12 | Applied Materials, Inc. | High temperature vacuum chuck assembly |
WO2009091189A2 (en) | 2008-01-16 | 2009-07-23 | Sosul Co., Ltd. | Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same |
US20090186571A1 (en) | 2008-01-22 | 2009-07-23 | Asm America, Inc. | Air ventilation system |
JP2011514660A (ja) | 2008-01-31 | 2011-05-06 | アプライド マテリアルズ インコーポレイテッド | 閉ループmocvdにおける堆積制御 |
US20090203197A1 (en) | 2008-02-08 | 2009-08-13 | Hiroji Hanawa | Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition |
US20090200494A1 (en) | 2008-02-11 | 2009-08-13 | Varian Semiconductor Equipment Associates, Inc. | Techniques for cold implantation of carbon-containing species |
GB0802486D0 (en) | 2008-02-12 | 2008-03-19 | Gilbert Patrick C | Warm water economy device |
KR101043211B1 (ko) | 2008-02-12 | 2011-06-22 | 신웅철 | 배치형 원자층 증착 장치 |
US20090206056A1 (en) | 2008-02-14 | 2009-08-20 | Songlin Xu | Method and Apparatus for Plasma Process Performance Matching in Multiple Wafer Chambers |
JP2009194248A (ja) | 2008-02-15 | 2009-08-27 | Tokyo Electron Ltd | パターン形成方法、半導体製造装置及び記憶媒体 |
JP5233734B2 (ja) | 2008-02-20 | 2013-07-10 | 東京エレクトロン株式会社 | ガス供給装置、成膜装置及び成膜方法 |
US20090214777A1 (en) | 2008-02-22 | 2009-08-27 | Demetrius Sarigiannis | Multiple ampoule delivery systems |
US9263298B2 (en) | 2008-02-27 | 2016-02-16 | Tokyo Electron Limited | Plasma etching apparatus and plasma etching method |
KR100968132B1 (ko) | 2008-02-29 | 2010-07-06 | (주)얼라이드 테크 파인더즈 | 안테나 및 이를 구비한 반도체 장치 |
US7727866B2 (en) | 2008-03-05 | 2010-06-01 | Varian Semiconductor Equipment Associates, Inc. | Use of chained implants in solar cells |
USD585968S1 (en) | 2008-03-06 | 2009-02-03 | West Coast Washers, Inc. | Pipe flashing |
US7858533B2 (en) | 2008-03-06 | 2010-12-28 | Tokyo Electron Limited | Method for curing a porous low dielectric constant dielectric film |
US7977256B2 (en) | 2008-03-06 | 2011-07-12 | Tokyo Electron Limited | Method for removing a pore-generating material from an uncured low-k dielectric film |
EP2099067A1 (en) | 2008-03-07 | 2009-09-09 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Process for adjusting the friction coefficient between surfaces of two solid objects |
JP5507097B2 (ja) | 2008-03-12 | 2014-05-28 | 富士フイルム株式会社 | ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置 |
GB2458507A (en) | 2008-03-20 | 2009-09-23 | Tecvac Ltd | Oxidation of non ferrous metal components |
US7695619B2 (en) | 2008-03-21 | 2010-04-13 | Pentair Filtration, Inc. | Modular drinking water filtration system with adapter rings for replaceable cartridges to assure proper fit |
JP2009239082A (ja) | 2008-03-27 | 2009-10-15 | Tokyo Electron Ltd | ガス供給装置、処理装置及び処理方法 |
US20090246399A1 (en) | 2008-03-28 | 2009-10-01 | Asm Japan K.K. | Method for activating reactive oxygen species for cleaning carbon-based film deposition |
US7816278B2 (en) | 2008-03-28 | 2010-10-19 | Tokyo Electron Limited | In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition |
US8252114B2 (en) | 2008-03-28 | 2012-08-28 | Tokyo Electron Limited | Gas distribution system and method for distributing process gas in a processing system |
USD590933S1 (en) | 2008-03-31 | 2009-04-21 | Mcp Industries, Inc. | Vent cap device |
US7659158B2 (en) | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
US7963736B2 (en) | 2008-04-03 | 2011-06-21 | Asm Japan K.K. | Wafer processing apparatus with wafer alignment device |
KR20100124797A (ko) | 2008-04-04 | 2010-11-29 | 다이셀 가가꾸 고교 가부시끼가이샤 | 포토레지스트용 폴리올 화합물 |
US20090250955A1 (en) | 2008-04-07 | 2009-10-08 | Applied Materials, Inc. | Wafer transfer blade |
WO2009129332A2 (en) | 2008-04-16 | 2009-10-22 | Asm America, Inc. | Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds |
CN102007597B (zh) | 2008-04-17 | 2014-02-19 | 应用材料公司 | 低温薄膜晶体管工艺、装置特性和装置稳定性改进 |
WO2009131902A2 (en) | 2008-04-23 | 2009-10-29 | Intermolecular, Inc. | Yttrium and titanium high-k dielectric films |
US20090269506A1 (en) | 2008-04-24 | 2009-10-29 | Seiji Okura | Method and apparatus for cleaning of a CVD reactor |
US8383525B2 (en) | 2008-04-25 | 2013-02-26 | Asm America, Inc. | Plasma-enhanced deposition process for forming a metal oxide thin film and related structures |
US8476368B2 (en) | 2008-04-28 | 2013-07-02 | Basf Se | Low-k dielectrics obtainable by twin polymerization |
US8252194B2 (en) | 2008-05-02 | 2012-08-28 | Micron Technology, Inc. | Methods of removing silicon oxide |
US7632549B2 (en) | 2008-05-05 | 2009-12-15 | Asm Japan K.K. | Method of forming a high transparent carbon film |
US8076237B2 (en) | 2008-05-09 | 2011-12-13 | Asm America, Inc. | Method and apparatus for 3D interconnect |
US8277670B2 (en) | 2008-05-13 | 2012-10-02 | Lam Research Corporation | Plasma process with photoresist mask pretreatment |
US20090286402A1 (en) | 2008-05-13 | 2009-11-19 | Applied Materials, Inc | Method for critical dimension shrink using conformal pecvd films |
JP2011525682A (ja) | 2008-05-14 | 2011-09-22 | アプライド マテリアルズ インコーポレイテッド | Rf電力供給のための時間分解チューニングスキームを利用したパルス化プラズマ処理の方法及び装置 |
US8333842B2 (en) | 2008-05-15 | 2012-12-18 | Applied Materials, Inc. | Apparatus for etching semiconductor wafers |
US7622369B1 (en) | 2008-05-30 | 2009-11-24 | Asm Japan K.K. | Device isolation technology on semiconductor substrate |
US8298628B2 (en) | 2008-06-02 | 2012-10-30 | Air Products And Chemicals, Inc. | Low temperature deposition of silicon-containing films |
WO2009146744A1 (de) | 2008-06-05 | 2009-12-10 | Osram Gesellschaft mit beschränkter Haftung | Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler |
US8283201B2 (en) | 2008-06-05 | 2012-10-09 | American Air Liquide, Inc. | Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films |
JP2009295932A (ja) | 2008-06-09 | 2009-12-17 | Canon Inc | 露光装置及びデバイス製造方法 |
US7915667B2 (en) | 2008-06-11 | 2011-03-29 | Qimonda Ag | Integrated circuits having a contact region and methods for manufacturing the same |
US20090308315A1 (en) | 2008-06-13 | 2009-12-17 | Asm International N.V. | Semiconductor processing apparatus with improved thermal characteristics and method for providing the same |
US7946762B2 (en) | 2008-06-17 | 2011-05-24 | Asm America, Inc. | Thermocouple |
KR20110031466A (ko) | 2008-06-20 | 2011-03-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 가스 분배 샤워헤드 스커트 |
US8726837B2 (en) | 2008-06-23 | 2014-05-20 | Applied Materials, Inc. | Semiconductor process chamber vision and monitoring system |
US20090325391A1 (en) | 2008-06-30 | 2009-12-31 | Asm International Nv | Ozone and teos process for silicon oxide deposition |
KR101036605B1 (ko) | 2008-06-30 | 2011-05-24 | 세메스 주식회사 | 기판 지지 유닛 및 이를 이용한 매엽식 기판 연마 장치 |
US8291857B2 (en) | 2008-07-03 | 2012-10-23 | Applied Materials, Inc. | Apparatuses and methods for atomic layer deposition |
JP2010021204A (ja) | 2008-07-08 | 2010-01-28 | Toshiba Corp | 半導体装置及びその製造方法 |
US8702867B2 (en) | 2008-07-08 | 2014-04-22 | Jusung Engineering Co., Ltd. | Gas distribution plate and substrate treating apparatus including the same |
US9997325B2 (en) | 2008-07-17 | 2018-06-12 | Verity Instruments, Inc. | Electron beam exciter for use in chemical analysis in processing systems |
US8058138B2 (en) | 2008-07-17 | 2011-11-15 | Micron Technology, Inc. | Gap processing |
USD614593S1 (en) | 2008-07-21 | 2010-04-27 | Asm Genitech Korea Ltd | Substrate support for a semiconductor deposition apparatus |
USD609652S1 (en) | 2008-07-22 | 2010-02-09 | Tokyo Electron Limited | Wafer attracting plate |
KR20100015213A (ko) | 2008-08-04 | 2010-02-12 | 삼성전기주식회사 | Cvd용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치 |
WO2010017136A1 (en) | 2008-08-04 | 2010-02-11 | Amir Dassoud Dabiran | Microchannel plate photocathode |
US8328585B2 (en) | 2008-08-07 | 2012-12-11 | Texas Instruments Incorporated | Modulated deposition process for stress control in thick TiN films |
USD600223S1 (en) | 2008-08-07 | 2009-09-15 | Ravinder Aggarwal | Susceptor ring |
US20110220874A1 (en) | 2008-08-08 | 2011-09-15 | Tobias Hanrath | Inorganic Bulk Multijunction Materials and Processes for Preparing the Same |
US8129555B2 (en) | 2008-08-12 | 2012-03-06 | Air Products And Chemicals, Inc. | Precursors for depositing silicon-containing films and methods for making and using same |
KR101017170B1 (ko) | 2008-08-13 | 2011-02-25 | 주식회사 동부하이텍 | 백 메탈 공정챔버 |
US8263502B2 (en) | 2008-08-13 | 2012-09-11 | Synos Technology, Inc. | Forming substrate structure by filling recesses with deposition material |
JP5338335B2 (ja) | 2008-08-13 | 2013-11-13 | 東京エレクトロン株式会社 | 搬送容器の開閉装置及びプローブ装置 |
US8147648B2 (en) | 2008-08-15 | 2012-04-03 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
JP5593472B2 (ja) | 2008-08-27 | 2014-09-24 | 株式会社日立国際電気 | 基板処理装置および半導体デバイスの製造方法 |
JP5188326B2 (ja) | 2008-08-28 | 2013-04-24 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、及び基板処理装置 |
US8084104B2 (en) | 2008-08-29 | 2011-12-27 | Asm Japan K.K. | Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition |
US20100055442A1 (en) | 2008-09-03 | 2010-03-04 | International Business Machines Corporation | METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES |
JP2010087467A (ja) | 2008-09-04 | 2010-04-15 | Tokyo Electron Ltd | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
JP5276388B2 (ja) | 2008-09-04 | 2013-08-28 | 東京エレクトロン株式会社 | 成膜装置及び基板処理装置 |
JP5226438B2 (ja) | 2008-09-10 | 2013-07-03 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び基板処理方法 |
USD643055S1 (en) | 2008-09-11 | 2011-08-09 | Asm Japan K.K. | Heater block for use in a semiconductor processing tool |
US8731706B2 (en) | 2008-09-12 | 2014-05-20 | Hitachi High-Technologies Corporation | Vacuum processing apparatus |
US20100065758A1 (en) | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric material treatment system and method of operating |
US9711373B2 (en) | 2008-09-22 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a gate dielectric for high-k metal gate devices |
US20100075037A1 (en) | 2008-09-22 | 2010-03-25 | Marsh Eugene P | Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods |
JP2010077508A (ja) | 2008-09-26 | 2010-04-08 | Tokyo Electron Ltd | 成膜装置及び基板処理装置 |
DE102008049353A1 (de) | 2008-09-29 | 2010-04-08 | Vat Holding Ag | Vakuumventil |
JP4638550B2 (ja) | 2008-09-29 | 2011-02-23 | 東京エレクトロン株式会社 | マスクパターンの形成方法、微細パターンの形成方法及び成膜装置 |
US9493875B2 (en) | 2008-09-30 | 2016-11-15 | Eugene Technology Co., Ltd. | Shower head unit and chemical vapor deposition apparatus |
US20100081293A1 (en) | 2008-10-01 | 2010-04-01 | Applied Materials, Inc. | Methods for forming silicon nitride based film or silicon carbon based film |
US20100090149A1 (en) | 2008-10-01 | 2010-04-15 | Compressor Engineering Corp. | Poppet valve assembly, system, and apparatus for use in high speed compressor applications |
USD609655S1 (en) | 2008-10-03 | 2010-02-09 | Ngk Insulators, Ltd. | Electrostatic chuck |
CN103337453B (zh) | 2008-10-07 | 2017-10-24 | 应用材料公司 | 用于从蚀刻基板有效地移除卤素残余物的设备 |
KR101627297B1 (ko) | 2008-10-13 | 2016-06-03 | 한국에이에스엠지니텍 주식회사 | 플라즈마 처리부 및 이를 포함하는 증착 장치 및 증착 방법 |
US8133555B2 (en) | 2008-10-14 | 2012-03-13 | Asm Japan K.K. | Method for forming metal film by ALD using beta-diketone metal complex |
US8105465B2 (en) | 2008-10-14 | 2012-01-31 | Applied Materials, Inc. | Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD) |
WO2010044978A1 (en) | 2008-10-15 | 2010-04-22 | Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University | Hybrid group iv/iii-v semiconductor structures |
US7745346B2 (en) | 2008-10-17 | 2010-06-29 | Novellus Systems, Inc. | Method for improving process control and film conformality of PECVD film |
JP2010097834A (ja) | 2008-10-17 | 2010-04-30 | Ushio Inc | バックライトユニット |
US8114734B2 (en) | 2008-10-21 | 2012-02-14 | United Microelectronics Corp. | Metal capacitor and method of making the same |
US8697189B2 (en) | 2008-10-21 | 2014-04-15 | Intevac, Inc. | Method and apparatus for precision surface modification in nano-imprint lithography |
US7967913B2 (en) | 2008-10-22 | 2011-06-28 | Applied Materials, Inc. | Remote plasma clean process with cycled high and low pressure clean steps |
WO2010062582A2 (en) | 2008-10-27 | 2010-06-03 | Applied Materials, Inc. | Vapor deposition method for ternary compounds |
US8185443B2 (en) | 2008-10-27 | 2012-05-22 | Ebay, Inc. | Method and apparatus for authorizing a payment via a remote device |
EP2353176A4 (en) | 2008-11-07 | 2013-08-28 | Asm Inc | REACTION CHAMBER |
JP5062143B2 (ja) | 2008-11-10 | 2012-10-31 | 東京エレクトロン株式会社 | 成膜装置 |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US8647722B2 (en) | 2008-11-14 | 2014-02-11 | Asm Japan K.K. | Method of forming insulation film using plasma treatment cycles |
JP2010153769A (ja) | 2008-11-19 | 2010-07-08 | Tokyo Electron Ltd | 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 |
US20100130017A1 (en) | 2008-11-21 | 2010-05-27 | Axcelis Technologies, Inc. | Front end of line plasma mediated ashing processes and apparatus |
US8714169B2 (en) | 2008-11-26 | 2014-05-06 | Semes Co. Ltd. | Spin head, apparatus for treating substrate, and method for treating substrate |
KR101004434B1 (ko) | 2008-11-26 | 2010-12-28 | 세메스 주식회사 | 기판 지지 유닛과, 이를 이용한 기판 연마 장치 및 방법 |
US8138676B2 (en) | 2008-12-01 | 2012-03-20 | Mills Robert L | Methods and systems for dimmable fluorescent lighting using multiple frequencies |
WO2010065473A2 (en) | 2008-12-01 | 2010-06-10 | Applied Materials, Inc. | Gas distribution blocker apparatus |
EP2194574B1 (en) | 2008-12-02 | 2018-11-07 | IMEC vzw | Method for producing interconnect structures for integrated circuits |
US8262287B2 (en) | 2008-12-08 | 2012-09-11 | Asm America, Inc. | Thermocouple |
JP5390846B2 (ja) | 2008-12-09 | 2014-01-15 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマクリーニング方法 |
US8765233B2 (en) | 2008-12-09 | 2014-07-01 | Asm Japan K.K. | Method for forming low-carbon CVD film for filling trenches |
US20100151206A1 (en) | 2008-12-11 | 2010-06-17 | Air Products And Chemicals, Inc. | Method for Removal of Carbon From An Organosilicate Material |
US8033771B1 (en) | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
JP5008768B2 (ja) * | 2008-12-15 | 2012-08-22 | 東京エレクトロン株式会社 | 基板処理システム、基板処理方法、プログラムを記憶した記憶媒体およびバルブ |
US9379011B2 (en) | 2008-12-19 | 2016-06-28 | Asm International N.V. | Methods for depositing nickel films and for making nickel silicide and nickel germanide |
KR20100075070A (ko) | 2008-12-24 | 2010-07-02 | 삼성전자주식회사 | 비휘발성 메모리 장치의 제조 방법 |
US8816424B2 (en) | 2008-12-26 | 2014-08-26 | SK Hynix Inc. | Nonvolatile memory device |
JP2010157536A (ja) | 2008-12-26 | 2010-07-15 | Nuflare Technology Inc | サセプタの製造方法 |
JP5295095B2 (ja) | 2008-12-29 | 2013-09-18 | ケー.シー.テック カンパニー リミテッド | 原子層蒸着装置 |
US7964490B2 (en) | 2008-12-31 | 2011-06-21 | Intel Corporation | Methods of forming nickel sulfide film on a semiconductor device |
US20100183825A1 (en) | 2008-12-31 | 2010-07-22 | Cambridge Nanotech Inc. | Plasma atomic layer deposition system and method |
US9640396B2 (en) | 2009-01-07 | 2017-05-02 | Brewer Science Inc. | Spin-on spacer materials for double- and triple-patterning lithography |
US8216380B2 (en) | 2009-01-08 | 2012-07-10 | Asm America, Inc. | Gap maintenance for opening to process chamber |
US20100176513A1 (en) | 2009-01-09 | 2010-07-15 | International Business Machines Corporation | Structure and method of forming metal interconnect structures in ultra low-k dielectrics |
KR101660241B1 (ko) | 2009-01-11 | 2016-09-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판을 이동시키기 위한 시스템, 장치 및 방법 |
US8151814B2 (en) | 2009-01-13 | 2012-04-10 | Asm Japan K.K. | Method for controlling flow and concentration of liquid precursor |
USD606952S1 (en) | 2009-01-16 | 2009-12-29 | Asm Genitech Korea Ltd. | Plasma inducing plate for semiconductor deposition apparatus |
US8591659B1 (en) | 2009-01-16 | 2013-11-26 | Novellus Systems, Inc. | Plasma clean method for deposition chamber |
US7919416B2 (en) | 2009-01-21 | 2011-04-05 | Asm Japan K.K. | Method of forming conformal dielectric film having Si-N bonds by PECVD |
US7972980B2 (en) | 2009-01-21 | 2011-07-05 | Asm Japan K.K. | Method of forming conformal dielectric film having Si-N bonds by PECVD |
US8142862B2 (en) | 2009-01-21 | 2012-03-27 | Asm Japan K.K. | Method of forming conformal dielectric film having Si-N bonds by PECVD |
US8680650B2 (en) | 2009-02-03 | 2014-03-25 | Micron Technology, Inc. | Capacitor structures having improved area efficiency |
KR101691044B1 (ko) | 2009-02-04 | 2016-12-29 | 맷슨 테크놀로지, 인크. | 기판의 표면에 걸친 온도 프로파일을 방사상으로 튜닝하는 정전 척 시스템 및 방법 |
US8307472B1 (en) | 2009-02-04 | 2012-11-13 | Thomas Jason Saxon | Light emitting diode system |
US8287648B2 (en) | 2009-02-09 | 2012-10-16 | Asm America, Inc. | Method and apparatus for minimizing contamination in semiconductor processing chamber |
EP2397574A4 (en) | 2009-02-16 | 2013-08-14 | Mitsubishi Plastics Inc | METHOD FOR PRODUCING A MULTILAYER GAS-REINFORCED FILM |
JP2010205967A (ja) | 2009-03-04 | 2010-09-16 | Tokyo Electron Ltd | プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体 |
WO2010100702A1 (ja) | 2009-03-04 | 2010-09-10 | 富士電機ホールディングス株式会社 | 成膜方法及び成膜装置 |
KR101049801B1 (ko) | 2009-03-05 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치 |
JP5221421B2 (ja) | 2009-03-10 | 2013-06-26 | 東京エレクトロン株式会社 | シャワーヘッド及びプラズマ処理装置 |
JP2010239115A (ja) | 2009-03-10 | 2010-10-21 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP5275094B2 (ja) | 2009-03-13 | 2013-08-28 | 東京エレクトロン株式会社 | 基板処理方法 |
US8703624B2 (en) | 2009-03-13 | 2014-04-22 | Air Products And Chemicals, Inc. | Dielectric films comprising silicon and methods for making same |
EP2230703A3 (en) | 2009-03-18 | 2012-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus and manufacturing method of lighting device |
KR101583608B1 (ko) | 2009-03-24 | 2016-01-08 | 삼성전자 주식회사 | 무기계 실리콘 전구체를 이용한 실리콘 산화막의 형성 방법및 이를 이용한 반도체 장치의 제조 방법 |
KR20110137775A (ko) | 2009-03-26 | 2011-12-23 | 파나소닉 주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
US8118484B2 (en) | 2009-03-31 | 2012-02-21 | Rosemount Inc. | Thermocouple temperature sensor with connection detection circuitry |
JP5292160B2 (ja) | 2009-03-31 | 2013-09-18 | 東京エレクトロン株式会社 | ガス流路構造体及び基板処理装置 |
US8284601B2 (en) | 2009-04-01 | 2012-10-09 | Samsung Electronics Co., Ltd. | Semiconductor memory device comprising three-dimensional memory cell array |
JP5647792B2 (ja) | 2009-04-01 | 2015-01-07 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | キャパシタ用容量絶縁膜の製造方法 |
US8197915B2 (en) | 2009-04-01 | 2012-06-12 | Asm Japan K.K. | Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8486191B2 (en) | 2009-04-07 | 2013-07-16 | Asm America, Inc. | Substrate reactor with adjustable injectors for mixing gases within reaction chamber |
JP5338443B2 (ja) | 2009-04-14 | 2013-11-13 | 信越半導体株式会社 | Soiウェーハの製造方法 |
US9431237B2 (en) | 2009-04-20 | 2016-08-30 | Applied Materials, Inc. | Post treatment methods for oxide layers on semiconductor devices |
US8404499B2 (en) | 2009-04-20 | 2013-03-26 | Applied Materials, Inc. | LED substrate processing |
US20100266765A1 (en) | 2009-04-21 | 2010-10-21 | White Carl L | Method and apparatus for growing a thin film onto a substrate |
CN102414794B (zh) | 2009-04-21 | 2015-01-28 | 应用材料公司 | 改良膜厚度不均匀性与粒子表现的cvd设备 |
US8071452B2 (en) | 2009-04-27 | 2011-12-06 | Asm America, Inc. | Atomic layer deposition of hafnium lanthanum oxides |
JP5136574B2 (ja) | 2009-05-01 | 2013-02-06 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US9297705B2 (en) | 2009-05-06 | 2016-03-29 | Asm America, Inc. | Smart temperature measuring device |
US8100583B2 (en) | 2009-05-06 | 2012-01-24 | Asm America, Inc. | Thermocouple |
US8382370B2 (en) | 2009-05-06 | 2013-02-26 | Asm America, Inc. | Thermocouple assembly with guarded thermocouple junction |
KR20100032812A (ko) | 2009-05-11 | 2010-03-26 | 주식회사 테스 | 화학기상증착 장치와 이를 이용한 기판 처리 시스템 |
US7842622B1 (en) | 2009-05-15 | 2010-11-30 | Asm Japan K.K. | Method of forming highly conformal amorphous carbon layer |
KR101311621B1 (ko) | 2009-05-20 | 2013-09-26 | 가부시끼가이샤 도시바 | 요철 패턴 형성 방법 |
US8004198B2 (en) | 2009-05-28 | 2011-08-23 | Osram Sylvania Inc. | Resetting an electronic ballast in the event of fault |
KR101064210B1 (ko) | 2009-06-01 | 2011-09-14 | 한국생산기술연구원 | 막증착 진공장비용 샤워헤드 |
JP5456036B2 (ja) | 2009-06-12 | 2014-03-26 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US20100317198A1 (en) | 2009-06-12 | 2010-12-16 | Novellus Systems, Inc. | Remote plasma processing of interface surfaces |
USD652896S1 (en) | 2009-06-17 | 2012-01-24 | Neoperl Gmbh | Faucet stream former |
US7825040B1 (en) | 2009-06-22 | 2010-11-02 | Asm Japan K.K. | Method for depositing flowable material using alkoxysilane or aminosilane precursor |
JP5285519B2 (ja) | 2009-07-01 | 2013-09-11 | パナソニック株式会社 | 半導体装置及びその製造方法 |
KR101110080B1 (ko) | 2009-07-08 | 2012-03-13 | 주식회사 유진테크 | 확산판을 선택적으로 삽입설치하는 기판처리방법 |
US20110006406A1 (en) | 2009-07-08 | 2011-01-13 | Imec | Fabrication of porogen residues free and mechanically robust low-k materials |
WO2011007323A1 (en) | 2009-07-14 | 2011-01-20 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Deposition of group iv metal-containing films at high temperature |
JP2011023718A (ja) | 2009-07-15 | 2011-02-03 | Asm Japan Kk | PEALDによってSi−N結合を有するストレス調節された誘電体膜を形成する方法 |
KR101687049B1 (ko) | 2009-07-17 | 2016-12-15 | 미쓰이 가가쿠 가부시키가이샤 | 적층체 및 그 제조 방법 |
US8071451B2 (en) | 2009-07-29 | 2011-12-06 | Axcelis Technologies, Inc. | Method of doping semiconductors |
JP5618505B2 (ja) | 2009-07-30 | 2014-11-05 | テクノクオーツ株式会社 | 石英ガラス部材の再生方法 |
US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8883270B2 (en) | 2009-08-14 | 2014-11-11 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species |
US8877655B2 (en) | 2010-05-07 | 2014-11-04 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8563085B2 (en) | 2009-08-18 | 2013-10-22 | Samsung Electronics Co., Ltd. | Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor |
KR101031226B1 (ko) | 2009-08-21 | 2011-04-29 | 에이피시스템 주식회사 | 급속열처리 장치의 히터블록 |
US9117773B2 (en) | 2009-08-26 | 2015-08-25 | Asm America, Inc. | High concentration water pulses for atomic layer deposition |
USD634719S1 (en) | 2009-08-27 | 2011-03-22 | Ebara Corporation | Elastic membrane for semiconductor wafer polishing apparatus |
US20110117728A1 (en) | 2009-08-27 | 2011-05-19 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
US9117769B2 (en) | 2009-08-27 | 2015-08-25 | Tokyo Electron Limited | Plasma etching method |
WO2011026064A1 (en) | 2009-08-31 | 2011-03-03 | The Penn State Research Foundation | Improved plasma enhanced atomic layer deposition process |
JP2011054708A (ja) | 2009-09-01 | 2011-03-17 | Elpida Memory Inc | 絶縁膜およびその製造方法、半導体装置、ならびにデータ処理システム |
JP5457109B2 (ja) | 2009-09-02 | 2014-04-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9012333B2 (en) | 2009-09-09 | 2015-04-21 | Spansion Llc | Varied silicon richness silicon nitride formation |
KR200478069Y1 (ko) | 2009-09-10 | 2015-08-24 | 램 리써치 코포레이션 | 플라즈마 처리 장치의 교체가능한 상부 체임버 부품 |
US20110061810A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
JP5504793B2 (ja) | 2009-09-26 | 2014-05-28 | 東京エレクトロン株式会社 | 熱処理装置及び冷却方法 |
JPWO2011040385A1 (ja) | 2009-09-29 | 2013-02-28 | 東京エレクトロン株式会社 | Ni膜の成膜方法 |
JP5467007B2 (ja) | 2009-09-30 | 2014-04-09 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
EP2306497B1 (en) | 2009-10-02 | 2012-06-06 | Imec | Method for manufacturing a low defect interface between a dielectric and a III/V compound |
US8544317B2 (en) | 2009-10-09 | 2013-10-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor processing apparatus with simultaneously movable stages |
US8415259B2 (en) | 2009-10-14 | 2013-04-09 | Asm Japan K.K. | Method of depositing dielectric film by modified PEALD method |
US8173554B2 (en) | 2009-10-14 | 2012-05-08 | Asm Japan K.K. | Method of depositing dielectric film having Si-N bonds by modified peald method |
US8465791B2 (en) | 2009-10-16 | 2013-06-18 | Msp Corporation | Method for counting particles in a gas |
US8637794B2 (en) | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
EP2494587B1 (en) | 2009-10-26 | 2020-07-15 | ASM International N.V. | Atomic layer deposition of antimony containing thin films |
US20110097901A1 (en) | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Dual mode inductively coupled plasma reactor with adjustable phase coil assembly |
JP5451324B2 (ja) | 2009-11-10 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US8528224B2 (en) | 2009-11-12 | 2013-09-10 | Novellus Systems, Inc. | Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia |
US8854734B2 (en) | 2009-11-12 | 2014-10-07 | Vela Technologies, Inc. | Integrating optical system and methods |
HUE032915T2 (hu) | 2009-11-13 | 2017-11-28 | Basf Se | Eljárás egy klór-betáplálás tisztítására |
US8367528B2 (en) | 2009-11-17 | 2013-02-05 | Asm America, Inc. | Cyclical epitaxial deposition and etch |
US8329585B2 (en) | 2009-11-17 | 2012-12-11 | Lam Research Corporation | Method for reducing line width roughness with plasma pre-etch treatment on photoresist |
JP5753351B2 (ja) | 2009-11-19 | 2015-07-22 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 電子デバイスを形成する方法 |
KR20110055912A (ko) | 2009-11-20 | 2011-05-26 | 주식회사 하이닉스반도체 | 반도체 소자의 콘택홀 형성방법 |
AU329418S (en) | 2009-11-23 | 2010-01-29 | Pusher tool | |
US8389977B2 (en) | 2009-12-10 | 2013-03-05 | Transphorm Inc. | Reverse side engineered III-nitride devices |
US20110139748A1 (en) | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
US8328494B2 (en) | 2009-12-15 | 2012-12-11 | Varian Semiconductor Equipment Associates, Inc. | In vacuum optical wafer heater for cryogenic processing |
US20110159202A1 (en) | 2009-12-29 | 2011-06-30 | Asm Japan K.K. | Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD |
KR20110078326A (ko) | 2009-12-31 | 2011-07-07 | 삼성전자주식회사 | 유전막 형성 방법 및 이를 이용한 반도체 소자 제조 방법 |
USD653734S1 (en) | 2010-01-08 | 2012-02-07 | Bulk Tank, Inc. | Screened gasket |
JP2011166106A (ja) | 2010-01-13 | 2011-08-25 | Renesas Electronics Corp | 半導体装置の製造方法及び半導体装置 |
JP5549441B2 (ja) | 2010-01-14 | 2014-07-16 | 東京エレクトロン株式会社 | 保持体機構、ロードロック装置、処理装置及び搬送機構 |
USD651291S1 (en) | 2010-01-24 | 2011-12-27 | Glv International (1995) Ltd. | Duct connector ring |
US20110183269A1 (en) | 2010-01-25 | 2011-07-28 | Hongbin Zhu | Methods Of Forming Patterns, And Methods For Trimming Photoresist Features |
US8480942B2 (en) | 2010-01-27 | 2013-07-09 | The Board Of Trustees Of The University Of Illinois | Method of forming a patterned layer of a material on a substrate |
US20110180233A1 (en) | 2010-01-27 | 2011-07-28 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
JP5107372B2 (ja) | 2010-02-04 | 2012-12-26 | 東京エレクトロン株式会社 | 熱処理装置、塗布現像処理システム、熱処理方法、塗布現像処理方法及びその熱処理方法又は塗布現像処理方法を実行させるためのプログラムを記録した記録媒体 |
KR101259862B1 (ko) | 2010-02-05 | 2013-05-02 | 도쿄엘렉트론가부시키가이샤 | 기판 보유지지구 및 기판 반송 장치 및 기판 처리 장치 |
KR101080604B1 (ko) | 2010-02-09 | 2011-11-04 | 성균관대학교산학협력단 | 원자층 식각 장치 및 이를 이용한 식각 방법 |
WO2011100293A2 (en) | 2010-02-12 | 2011-08-18 | Applied Materials, Inc. | Process chamber gas flow improvements |
US8562272B2 (en) | 2010-02-16 | 2013-10-22 | Lam Research Corporation | Substrate load and unload mechanisms for high throughput |
US8293658B2 (en) | 2010-02-17 | 2012-10-23 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
JP2011181681A (ja) | 2010-03-01 | 2011-09-15 | Mitsui Eng & Shipbuild Co Ltd | 原子層堆積方法及び原子層堆積装置 |
US8241991B2 (en) | 2010-03-05 | 2012-08-14 | Asm Japan K.K. | Method for forming interconnect structure having airgap |
WO2011112617A2 (en) | 2010-03-12 | 2011-09-15 | Applied Materials, Inc. | Atomic layer deposition chamber with multi inject |
FR2957716B1 (fr) | 2010-03-18 | 2012-10-05 | Soitec Silicon On Insulator | Procede de finition d'un substrat de type semi-conducteur sur isolant |
US8039388B1 (en) | 2010-03-24 | 2011-10-18 | Taiwam Semiconductor Manufacturing Company, Ltd. | Main spacer trim-back method for replacement gate process |
US8709551B2 (en) | 2010-03-25 | 2014-04-29 | Novellus Systems, Inc. | Smooth silicon-containing films |
US9017933B2 (en) | 2010-03-29 | 2015-04-28 | Tokyo Electron Limited | Method for integrating low-k dielectrics |
EP2378543B1 (en) | 2010-04-14 | 2015-05-20 | ASM Genitech Korea Ltd. | Method of forming semiconductor patterns |
US20110256692A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
US9611544B2 (en) | 2010-04-15 | 2017-04-04 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US9076646B2 (en) | 2010-04-15 | 2015-07-07 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
US8956983B2 (en) | 2010-04-15 | 2015-02-17 | Novellus Systems, Inc. | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US8993460B2 (en) | 2013-01-10 | 2015-03-31 | Novellus Systems, Inc. | Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants |
US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
CZ303655B6 (cs) | 2010-04-16 | 2013-01-30 | Skutchanová@Zuzana | Zpusob výroby brousicího povrchu skleneného kosmetického prípravku |
KR101121858B1 (ko) | 2010-04-27 | 2012-03-21 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
CH702999A1 (de) | 2010-04-29 | 2011-10-31 | Amt Ag | Vorrichtung zur Beschichtung von Substraten mittels Hochgeschwindigkeitsflammspritzen. |
US20110265951A1 (en) | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Twin chamber processing system |
US8496756B2 (en) | 2010-04-30 | 2013-07-30 | Applied Materials, Inc. | Methods for processing substrates in process systems having shared resources |
US8707754B2 (en) | 2010-04-30 | 2014-04-29 | Applied Materials, Inc. | Methods and apparatus for calibrating flow controllers in substrate processing systems |
TWI551718B (zh) | 2010-04-30 | 2016-10-01 | 應用材料股份有限公司 | 豎立直線cvd系統 |
US9441295B2 (en) | 2010-05-14 | 2016-09-13 | Solarcity Corporation | Multi-channel gas-delivery system |
US20110294075A1 (en) | 2010-05-25 | 2011-12-01 | United Microelectronics Corp. | Patterning method |
US8513129B2 (en) | 2010-05-28 | 2013-08-20 | Applied Materials, Inc. | Planarizing etch hardmask to increase pattern density and aspect ratio |
AU2011258795B2 (en) | 2010-05-28 | 2014-06-26 | Exxonmobil Upstream Research Company | Integrated adsorber head and valve design and swing adsorption methods related thereto |
JP5593384B2 (ja) | 2010-06-01 | 2014-09-24 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US8912353B2 (en) | 2010-06-02 | 2014-12-16 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for depositing films comprising same |
US8637390B2 (en) | 2010-06-04 | 2014-01-28 | Applied Materials, Inc. | Metal gate structures and methods for forming thereof |
JP5788975B2 (ja) | 2010-06-09 | 2015-10-07 | ザ プロクター アンド ギャンブルカンパニー | 液体パーソナルケア組成物の半連続供給式製造 |
JP5525339B2 (ja) | 2010-06-10 | 2014-06-18 | ナブテスコ株式会社 | ロボットアーム |
TWI529808B (zh) | 2010-06-10 | 2016-04-11 | Asm國際股份有限公司 | 使膜選擇性沈積於基板上的方法 |
JP2012004401A (ja) | 2010-06-18 | 2012-01-05 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
JP5405667B2 (ja) | 2010-07-22 | 2014-02-05 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
US8721791B2 (en) | 2010-07-28 | 2014-05-13 | Applied Materials, Inc. | Showerhead support structure for improved gas flow |
JP5490753B2 (ja) | 2010-07-29 | 2014-05-14 | 東京エレクトロン株式会社 | トレンチの埋め込み方法および成膜システム |
US9443753B2 (en) | 2010-07-30 | 2016-09-13 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
US8669185B2 (en) | 2010-07-30 | 2014-03-11 | Asm Japan K.K. | Method of tailoring conformality of Si-containing film |
JP2012038819A (ja) | 2010-08-04 | 2012-02-23 | Sanyo Electric Co Ltd | 半導体レーザ装置および光装置 |
US9449793B2 (en) | 2010-08-06 | 2016-09-20 | Lam Research Corporation | Systems, methods and apparatus for choked flow element extraction |
US8357608B2 (en) | 2010-08-09 | 2013-01-22 | International Business Machines Corporation | Multi component dielectric layer |
US9449858B2 (en) | 2010-08-09 | 2016-09-20 | Applied Materials, Inc. | Transparent reflector plate for rapid thermal processing chamber |
US9783885B2 (en) | 2010-08-11 | 2017-10-10 | Unit Cell Diamond Llc | Methods for producing diamond mass and apparatus therefor |
KR101658492B1 (ko) | 2010-08-13 | 2016-09-21 | 삼성전자주식회사 | 미세 패턴의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법 |
US9487600B2 (en) | 2010-08-17 | 2016-11-08 | Uchicago Argonne, Llc | Ordered nanoscale domains by infiltration of block copolymers |
US8685845B2 (en) | 2010-08-20 | 2014-04-01 | International Business Machines Corporation | Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas |
US8945305B2 (en) | 2010-08-31 | 2015-02-03 | Micron Technology, Inc. | Methods of selectively forming a material using parylene coating |
EP2426233B1 (en) | 2010-09-03 | 2013-05-01 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Use of dialkyl monoalkoxy aluminum for the growth of Al2O3 thin films for photovoltaic applications |
CN102383106B (zh) | 2010-09-03 | 2013-12-25 | 甘志银 | 快速清除残余反应气体的金属有机物化学气相沉积反应腔体 |
US8394466B2 (en) | 2010-09-03 | 2013-03-12 | Asm Japan K.K. | Method of forming conformal film having si-N bonds on high-aspect ratio pattern |
US20120058630A1 (en) | 2010-09-08 | 2012-03-08 | Veeco Instruments Inc. | Linear Cluster Deposition System |
US20120064690A1 (en) | 2010-09-10 | 2012-03-15 | Elpida Memory, Inc. | Method for manufacturing semiconductor device |
JP5560147B2 (ja) | 2010-09-13 | 2014-07-23 | 東京エレクトロン株式会社 | 成膜方法及び半導体装置の製造方法 |
KR20120029291A (ko) | 2010-09-16 | 2012-03-26 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US8524612B2 (en) | 2010-09-23 | 2013-09-03 | Novellus Systems, Inc. | Plasma-activated deposition of conformal films |
US9685320B2 (en) | 2010-09-23 | 2017-06-20 | Lam Research Corporation | Methods for depositing silicon oxide |
US8722548B2 (en) | 2010-09-24 | 2014-05-13 | International Business Machines Corporation | Structures and techniques for atomic layer deposition |
US8076250B1 (en) | 2010-10-06 | 2011-12-13 | Applied Materials, Inc. | PECVD oxide-nitride and oxide-silicon stacks for 3D memory application |
US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
KR101896607B1 (ko) | 2010-10-19 | 2018-09-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 나노큐어 자외선 챔버용 석영 샤워헤드 |
US8192901B2 (en) | 2010-10-21 | 2012-06-05 | Asahi Glass Company, Limited | Glass substrate-holding tool |
USD654884S1 (en) | 2010-10-21 | 2012-02-28 | Tokyo Electron Limited | Top plate for reactor for manufacturing semiconductor |
JP6004179B2 (ja) | 2010-10-21 | 2016-10-05 | 日産化学工業株式会社 | Euvリソグラフィー用レジスト上層膜形成組成物 |
US8845806B2 (en) | 2010-10-22 | 2014-09-30 | Asm Japan K.K. | Shower plate having different aperture dimensions and/or distributions |
JP2013542613A (ja) | 2010-10-27 | 2013-11-21 | アプライド マテリアルズ インコーポレイテッド | フォトレジスト線幅の荒れを制御するための方法及び装置 |
US8926788B2 (en) | 2010-10-27 | 2015-01-06 | Lam Research Ag | Closed chamber for wafer wet processing |
JP5544343B2 (ja) | 2010-10-29 | 2014-07-09 | 東京エレクトロン株式会社 | 成膜装置 |
WO2012061593A2 (en) | 2010-11-03 | 2012-05-10 | Applied Materials, Inc. | Apparatus and methods for deposition of silicon carbide and silicon carbonitride films |
US8470187B2 (en) | 2010-11-05 | 2013-06-25 | Asm Japan K.K. | Method of depositing film with tailored comformality |
CN103201408A (zh) | 2010-11-05 | 2013-07-10 | 思诺斯技术公司 | 具有多个等离子体室的游离基反应器 |
JP5722595B2 (ja) | 2010-11-11 | 2015-05-20 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
US20120121823A1 (en) | 2010-11-12 | 2012-05-17 | Applied Materials, Inc. | Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film |
US20140144500A1 (en) | 2010-11-22 | 2014-05-29 | E I Du Pont De Nemours And Company | Semiconductor inks films, coated substrates and methods of preparation |
JPWO2012073938A1 (ja) * | 2010-11-29 | 2014-05-19 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
JP5608758B2 (ja) | 2010-12-09 | 2014-10-15 | 株式会社アルバック | 有機薄膜形成装置 |
US20120149213A1 (en) | 2010-12-09 | 2012-06-14 | Lakshminarayana Nittala | Bottom up fill in high aspect ratio trenches |
KR20180065033A (ko) | 2010-12-20 | 2018-06-15 | 에베 그룹 에. 탈너 게엠베하 | 웨이퍼의 장착을 위한 수용 수단 |
US9719169B2 (en) | 2010-12-20 | 2017-08-01 | Novellus Systems, Inc. | System and apparatus for flowable deposition in semiconductor fabrication |
JP2014505356A (ja) | 2010-12-20 | 2014-02-27 | アプライド マテリアルズ インコーポレイテッド | 耐集積損傷性を改善するインシトゥ低誘電率キャッピング |
JP5735304B2 (ja) | 2010-12-21 | 2015-06-17 | 株式会社日立国際電気 | 基板処理装置、基板の製造方法、半導体デバイスの製造方法およびガス供給管 |
US8314034B2 (en) | 2010-12-23 | 2012-11-20 | Intel Corporation | Feature size reduction |
JP5675331B2 (ja) | 2010-12-27 | 2015-02-25 | 東京エレクトロン株式会社 | トレンチの埋め込み方法 |
JP2012138500A (ja) | 2010-12-27 | 2012-07-19 | Tokyo Electron Ltd | タングステン膜又は酸化タングステン膜上への酸化シリコン膜の成膜方法及び成膜装置 |
US8901016B2 (en) | 2010-12-28 | 2014-12-02 | Asm Japan K.K. | Method of forming metal oxide hardmask |
JP5573666B2 (ja) | 2010-12-28 | 2014-08-20 | 東京エレクトロン株式会社 | 原料供給装置及び成膜装置 |
FR2970110B1 (fr) | 2010-12-29 | 2013-09-06 | St Microelectronics Crolles 2 | Procede de fabrication d'une couche de dielectrique polycristalline |
CN103270578B (zh) | 2010-12-30 | 2016-10-26 | 应用材料公司 | 使用微波等离子体的薄膜沉积 |
JP5609663B2 (ja) | 2011-01-18 | 2014-10-22 | 旭硝子株式会社 | ガラス基板保持手段、およびそれを用いたeuvマスクブランクスの製造方法 |
US20120180954A1 (en) | 2011-01-18 | 2012-07-19 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
JP5782279B2 (ja) | 2011-01-20 | 2015-09-24 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US8398773B2 (en) | 2011-01-21 | 2013-03-19 | Asm International N.V. | Thermal processing furnace and liner for the same |
US8969823B2 (en) | 2011-01-21 | 2015-03-03 | Uchicago Argonne, Llc | Microchannel plate detector and methods for their fabrication |
US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
CN103329259B (zh) | 2011-01-26 | 2015-05-27 | 应用材料公司 | 氮化硅与氮氧化硅的等离子体处理 |
US8465811B2 (en) | 2011-01-28 | 2013-06-18 | Asm Japan K.K. | Method of depositing film by atomic layer deposition with pulse-time-modulated plasma |
US20120263876A1 (en) | 2011-02-14 | 2012-10-18 | Asm Ip Holding B.V. | Deposition of silicon dioxide on hydrophobic surfaces |
US8329599B2 (en) | 2011-02-18 | 2012-12-11 | Asm Japan K.K. | Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen |
US8563443B2 (en) | 2011-02-18 | 2013-10-22 | Asm Japan K.K. | Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen |
TWM412450U (en) | 2011-02-21 | 2011-09-21 | Santoma Ltd | Ceramic Glass composite electrode and Fluorescent |
JP2012195562A (ja) | 2011-02-28 | 2012-10-11 | Hitachi Kokusai Electric Inc | 異径基板用アタッチメントおよび基板処理装置ならびに基板若しくは半導体デバイスの製造方法 |
US20120219824A1 (en) | 2011-02-28 | 2012-08-30 | Uchicago Argonne Llc | Atomic layer deposition of super-conducting niobium silicide |
WO2012118757A1 (en) | 2011-03-01 | 2012-09-07 | Exxonmobil Upstream Research Company | Apparatus and systems having a reciprocating valve head assembly and swing adsorption processes related thereto |
US8466411B2 (en) | 2011-03-03 | 2013-06-18 | Asm Japan K.K. | Calibration method of UV sensor for UV curing |
CN102655086B (zh) | 2011-03-03 | 2015-07-01 | 东京毅力科创株式会社 | 半导体器件的制造方法 |
US8501605B2 (en) | 2011-03-14 | 2013-08-06 | Applied Materials, Inc. | Methods and apparatus for conformal doping |
JP5820731B2 (ja) | 2011-03-22 | 2015-11-24 | 株式会社日立国際電気 | 基板処理装置および固体原料補充方法 |
US9684234B2 (en) | 2011-03-24 | 2017-06-20 | Uchicago Argonne, Llc | Sequential infiltration synthesis for enhancing multiple-patterning lithography |
US8980418B2 (en) | 2011-03-24 | 2015-03-17 | Uchicago Argonne, Llc | Sequential infiltration synthesis for advanced lithography |
JP5203482B2 (ja) | 2011-03-28 | 2013-06-05 | 株式会社小松製作所 | 加熱装置 |
JP5922219B2 (ja) | 2011-03-31 | 2016-05-24 | アイメックImec | 単結晶スズ含有半導体材料を成長させる方法 |
US8900402B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
US8298951B1 (en) | 2011-04-13 | 2012-10-30 | Asm Japan K.K. | Footing reduction using etch-selective layer |
US8371567B2 (en) | 2011-04-13 | 2013-02-12 | Novellus Systems, Inc. | Pedestal covers |
US20140056679A1 (en) | 2011-04-15 | 2014-02-27 | Tazmo Co., Ltd. | Wafer exchange apparatus and wafer supporting hand |
US8871617B2 (en) | 2011-04-22 | 2014-10-28 | Asm Ip Holding B.V. | Deposition and reduction of mixed metal oxide thin films |
US8492170B2 (en) | 2011-04-25 | 2013-07-23 | Applied Materials, Inc. | UV assisted silylation for recovery and pore sealing of damaged low K films |
US8592005B2 (en) | 2011-04-26 | 2013-11-26 | Asm Japan K.K. | Atomic layer deposition for controlling vertical film growth |
USD655055S1 (en) | 2011-04-28 | 2012-02-28 | Carolyn Grace Toll | Pet outfit |
US8746284B2 (en) | 2011-05-11 | 2014-06-10 | Intermolecular, Inc. | Apparatus and method for multiple symmetrical divisional gas distribution |
US8809170B2 (en) | 2011-05-19 | 2014-08-19 | Asm America Inc. | High throughput cyclical epitaxial deposition and etch process |
US8771807B2 (en) | 2011-05-24 | 2014-07-08 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for making and using same |
US20120304935A1 (en) | 2011-05-31 | 2012-12-06 | Oosterlaken Theodorus G M | Bubbler assembly and method for vapor flow control |
JP2013012719A (ja) | 2011-05-31 | 2013-01-17 | Hitachi Kokusai Electric Inc | 基板処理装置および基板処理方法 |
US9136180B2 (en) | 2011-06-01 | 2015-09-15 | Asm Ip Holding B.V. | Process for depositing electrode with high effective work function |
US8692319B2 (en) | 2011-06-03 | 2014-04-08 | Infineon Technologies Austria Ag | Lateral trench MESFET |
TWI541938B (zh) | 2011-06-03 | 2016-07-11 | 諾菲勒斯系統公司 | 用於互連的含金屬及矽覆蓋層 |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US8927318B2 (en) | 2011-06-14 | 2015-01-06 | International Business Machines Corporation | Spalling methods to form multi-junction photovoltaic structure |
US9175392B2 (en) | 2011-06-17 | 2015-11-03 | Intermolecular, Inc. | System for multi-region processing |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10707082B2 (en) | 2011-07-06 | 2020-07-07 | Asm International N.V. | Methods for depositing thin films comprising indium nitride by atomic layer deposition |
GB2506317B (en) | 2011-07-06 | 2017-10-25 | Univ Wayne State | Atomic layer deposition of transition metal thin films |
US8962400B2 (en) | 2011-07-07 | 2015-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-situ doping of arsenic for source and drain epitaxy |
US20130014697A1 (en) | 2011-07-12 | 2013-01-17 | Asm Japan K.K. | Container Having Multiple Compartments Containing Liquid Material for Multiple Wafer-Processing Chambers |
JP6132242B2 (ja) | 2011-07-12 | 2017-05-24 | パナソニックIpマネジメント株式会社 | 窒化物半導体装置およびその製造方法 |
US9018567B2 (en) | 2011-07-13 | 2015-04-28 | Asm International N.V. | Wafer processing apparatus with heated, rotating substrate support |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
JP5940342B2 (ja) | 2011-07-15 | 2016-06-29 | 東京エレクトロン株式会社 | 基板搬送装置、基板処理システムおよび基板搬送方法、ならびに記憶媒体 |
US9630127B2 (en) | 2011-07-19 | 2017-04-25 | Hayward Industries, Inc. | Filter vessel assembly and related methods of use |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US8617411B2 (en) | 2011-07-20 | 2013-12-31 | Lam Research Corporation | Methods and apparatus for atomic layer etching |
JP5789149B2 (ja) | 2011-07-21 | 2015-10-07 | Jswアフティ株式会社 | 原子層成長方法及び原子層成長装置 |
US8778448B2 (en) | 2011-07-21 | 2014-07-15 | International Business Machines Corporation | Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys |
US8716072B2 (en) | 2011-07-25 | 2014-05-06 | International Business Machines Corporation | Hybrid CMOS technology with nanowire devices and double gated planar devices |
US8551892B2 (en) | 2011-07-27 | 2013-10-08 | Asm Japan K.K. | Method for reducing dielectric constant of film using direct plasma of hydrogen |
US20130025786A1 (en) | 2011-07-28 | 2013-01-31 | Vladislav Davidkovich | Systems for and methods of controlling time-multiplexed deep reactive-ion etching processes |
CN102931083B (zh) | 2011-08-10 | 2015-07-29 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
US9184100B2 (en) | 2011-08-10 | 2015-11-10 | United Microelectronics Corp. | Semiconductor device having strained fin structure and method of making the same |
US8614047B2 (en) | 2011-08-26 | 2013-12-24 | International Business Machines Corporation | Photodecomposable bases and photoresist compositions |
TWI492298B (zh) | 2011-08-26 | 2015-07-11 | Applied Materials Inc | 雙重圖案化蝕刻製程 |
US20130048606A1 (en) | 2011-08-31 | 2013-02-28 | Zhigang Mao | Methods for in-situ chamber dry clean in photomask plasma etching processing chamber |
US20130217239A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Flowable silicon-and-carbon-containing layers for semiconductor processing |
US20130217240A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Flowable silicon-carbon-nitrogen layers for semiconductor processing |
US20130217241A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers |
US20130217243A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Doping of dielectric layers |
US20130064973A1 (en) | 2011-09-09 | 2013-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chamber Conditioning Method |
JP2013062361A (ja) | 2011-09-13 | 2013-04-04 | Tokyo Electron Ltd | 熱処理装置、温度制御システム、熱処理方法、温度制御方法及びその熱処理方法又はその温度制御方法を実行させるためのプログラムを記録した記録媒体 |
US9177872B2 (en) | 2011-09-16 | 2015-11-03 | Micron Technology, Inc. | Memory cells, semiconductor devices, systems including such cells, and methods of fabrication |
US20130068970A1 (en) | 2011-09-21 | 2013-03-21 | Asm Japan K.K. | UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations |
JP5549655B2 (ja) | 2011-09-26 | 2014-07-16 | 株式会社安川電機 | ハンドおよびロボット |
US8993072B2 (en) | 2011-09-27 | 2015-03-31 | Air Products And Chemicals, Inc. | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
US9644796B2 (en) | 2011-09-29 | 2017-05-09 | Applied Materials, Inc. | Methods for in-situ calibration of a flow controller |
US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
US8569184B2 (en) * | 2011-09-30 | 2013-10-29 | Asm Japan K.K. | Method for forming single-phase multi-element film by PEALD |
JP6042656B2 (ja) | 2011-09-30 | 2016-12-14 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
CN103889888B (zh) | 2011-10-03 | 2017-04-26 | Asml荷兰有限公司 | 提供用于可自组装聚合物的图案化取向模板的方法 |
KR102058760B1 (ko) | 2011-10-10 | 2019-12-23 | 브레우어 사이언스 인코포레이션 | 리소그래피 처리를 위한 스핀-온 탄소 조성물 |
JP6202798B2 (ja) | 2011-10-12 | 2017-09-27 | エーエスエム インターナショナル エヌ.ヴェー.Asm International N.V. | 酸化アンチモン膜の原子層堆積 |
US9281231B2 (en) | 2011-10-12 | 2016-03-08 | Ferrotec (Usa) Corporation | Non-contact magnetic drive assembly with mechanical stop elements |
USD695240S1 (en) | 2011-10-20 | 2013-12-10 | Tokyo Electron Limited | Arm for wafer transportation for manufacturing semiconductor |
US9096931B2 (en) | 2011-10-27 | 2015-08-04 | Asm America, Inc | Deposition valve assembly and method of heating the same |
US9341296B2 (en) | 2011-10-27 | 2016-05-17 | Asm America, Inc. | Heater jacket for a fluid line |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9574268B1 (en) | 2011-10-28 | 2017-02-21 | Asm America, Inc. | Pulsed valve manifold for atomic layer deposition |
TWI606136B (zh) | 2011-11-04 | 2017-11-21 | Asm國際股份有限公司 | 沉積摻雜氧化矽的方法以及用於沉積摻雜氧化矽至基板上的原子層沉積製程 |
US8927059B2 (en) | 2011-11-08 | 2015-01-06 | Applied Materials, Inc. | Deposition of metal films using alane-based precursors |
US20130122712A1 (en) | 2011-11-14 | 2013-05-16 | Jong Mun Kim | Method of etching high aspect ratio features in a dielectric layer |
US20130119018A1 (en) | 2011-11-15 | 2013-05-16 | Keren Jacobs Kanarik | Hybrid pulsing plasma processing systems |
US9005539B2 (en) | 2011-11-23 | 2015-04-14 | Asm Ip Holding B.V. | Chamber sealing member |
US9167625B2 (en) | 2011-11-23 | 2015-10-20 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
US10276410B2 (en) | 2011-11-25 | 2019-04-30 | Nhk Spring Co., Ltd. | Substrate support device |
JP5694129B2 (ja) | 2011-11-29 | 2015-04-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
US8633115B2 (en) | 2011-11-30 | 2014-01-21 | Applied Materials, Inc. | Methods for atomic layer etching |
KR101720117B1 (ko) | 2011-12-14 | 2017-03-27 | 인텔 코포레이션 | 복수의 금속 산화물층들을 구비한 절연체 스택을 갖는 금속―절연체―금속(mim)커패시터 |
US20130157409A1 (en) | 2011-12-16 | 2013-06-20 | Kaushik Vaidya | Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices |
US9153583B2 (en) | 2011-12-20 | 2015-10-06 | Intel Corporation | III-V layers for N-type and P-type MOS source-drain contacts |
USD691974S1 (en) | 2011-12-22 | 2013-10-22 | Tokyo Electron Limited | Holding pad for transferring a wafer |
CN106847875B (zh) | 2011-12-23 | 2021-04-20 | 索尼公司 | 非平面栅极全包围器件及其制造方法 |
JP5679581B2 (ja) | 2011-12-27 | 2015-03-04 | 東京エレクトロン株式会社 | 成膜方法 |
US20130161629A1 (en) | 2011-12-27 | 2013-06-27 | Applied Materials, Inc. | Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application |
US9388492B2 (en) | 2011-12-27 | 2016-07-12 | Asm America, Inc. | Vapor flow control apparatus for atomic layer deposition |
US8883028B2 (en) | 2011-12-28 | 2014-11-11 | Lam Research Corporation | Mixed mode pulsing etching in plasma processing systems |
KR20130076979A (ko) | 2011-12-29 | 2013-07-09 | 삼성전자주식회사 | 반도체 소자 및 이의 제조방법 |
CN102505114A (zh) | 2012-01-03 | 2012-06-20 | 西安电子科技大学 | 基于Ni膜辅助退火的SiC衬底上石墨烯制备方法 |
TW201330086A (zh) | 2012-01-05 | 2013-07-16 | Duan-Ren Yu | 蝕刻裝置 |
US8659066B2 (en) | 2012-01-06 | 2014-02-25 | International Business Machines Corporation | Integrated circuit with a thin body field effect transistor and capacitor |
USD676943S1 (en) | 2012-01-11 | 2013-02-26 | Bill Kluss | Pipe end cap |
US20130183814A1 (en) | 2012-01-13 | 2013-07-18 | Applied Materials, Inc. | Method of depositing a silicon germanium tin layer on a substrate |
US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
USD665055S1 (en) | 2012-01-24 | 2012-08-07 | Asm Ip Holding B.V. | Shower plate |
JP5601331B2 (ja) | 2012-01-26 | 2014-10-08 | 株式会社安川電機 | ロボットハンドおよびロボット |
US9466524B2 (en) | 2012-01-31 | 2016-10-11 | Applied Materials, Inc. | Method of depositing metals using high frequency plasma |
US9177826B2 (en) | 2012-02-02 | 2015-11-03 | Globalfoundries Inc. | Methods of forming metal nitride materials |
USD698904S1 (en) | 2012-02-08 | 2014-02-04 | Asm Ip Holding B.V. | Vacuum flange ring |
US8728955B2 (en) | 2012-02-14 | 2014-05-20 | Novellus Systems, Inc. | Method of plasma activated deposition of a conformal film on a substrate surface |
JP5912637B2 (ja) | 2012-02-17 | 2016-04-27 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
US8686386B2 (en) | 2012-02-17 | 2014-04-01 | Sandisk 3D Llc | Nonvolatile memory device using a varistor as a current limiter element |
US20130224964A1 (en) | 2012-02-28 | 2013-08-29 | Asm Ip Holding B.V. | Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond |
US9202727B2 (en) | 2012-03-02 | 2015-12-01 | ASM IP Holding | Susceptor heater shim |
JP6092902B2 (ja) | 2012-03-09 | 2017-03-08 | エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated | 薄膜トランジスター機器上にケイ素含有膜を製造する方法 |
JP6195386B2 (ja) | 2012-03-09 | 2017-09-13 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | ディスプレイ・デバイスのためのバリア材料 |
US8912101B2 (en) | 2012-03-15 | 2014-12-16 | Asm Ip Holding B.V. | Method for forming Si-containing film using two precursors by ALD |
USD715410S1 (en) | 2012-03-21 | 2014-10-14 | Blucher Metal A/S | Roof drain |
US9682398B2 (en) | 2012-03-30 | 2017-06-20 | Applied Materials, Inc. | Substrate processing system having susceptorless substrate support with enhanced substrate heating control |
US9082684B2 (en) | 2012-04-02 | 2015-07-14 | Applied Materials, Inc. | Method of epitaxial doped germanium tin alloy formation |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
US9460912B2 (en) | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
US20130269612A1 (en) | 2012-04-16 | 2013-10-17 | Hermes-Epitek Corporation | Gas Treatment Apparatus with Surrounding Spray Curtains |
US8535767B1 (en) | 2012-04-18 | 2013-09-17 | Asm Ip Holding B.V. | Method for repairing damage of dielectric film by hydrocarbon restoration and hydrocarbon depletion using UV irradiation |
US10679883B2 (en) | 2012-04-19 | 2020-06-09 | Intevac, Inc. | Wafer plate and mask arrangement for substrate fabrication |
MY167662A (en) | 2012-04-19 | 2018-09-21 | Intevac Inc | Dual-mask arrangement for solar cell fabrication |
US10062600B2 (en) | 2012-04-26 | 2018-08-28 | Intevac, Inc. | System and method for bi-facial processing of substrates |
MY170824A (en) | 2012-04-26 | 2019-09-04 | Intevac Inc | System architecture for vacuum processing |
US8647439B2 (en) | 2012-04-26 | 2014-02-11 | Applied Materials, Inc. | Method of epitaxial germanium tin alloy surface preparation |
US20130288485A1 (en) | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
US9029253B2 (en) | 2012-05-02 | 2015-05-12 | Asm Ip Holding B.V. | Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same |
US8728832B2 (en) | 2012-05-07 | 2014-05-20 | Asm Ip Holdings B.V. | Semiconductor device dielectric interface layer |
JP2013235912A (ja) | 2012-05-08 | 2013-11-21 | Tokyo Electron Ltd | 被処理基体をエッチングする方法、及びプラズマエッチング装置 |
TWI522490B (zh) | 2012-05-10 | 2016-02-21 | 應用材料股份有限公司 | 利用微波電漿化學氣相沈積在基板上沈積膜的方法 |
US8846543B2 (en) | 2012-05-24 | 2014-09-30 | Jinhong Tong | Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics |
US20130320429A1 (en) | 2012-05-31 | 2013-12-05 | Asm Ip Holding B.V. | Processes and structures for dopant profile control in epitaxial trench fill |
US8785215B2 (en) | 2012-05-31 | 2014-07-22 | Asm Ip Holding B.V. | Method for repairing damage of dielectric film by cyclic processes |
US9978585B2 (en) | 2012-06-01 | 2018-05-22 | Versum Materials Us, Llc | Organoaminodisilane precursors and methods for depositing films comprising same |
US9337018B2 (en) | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
WO2013182878A2 (en) | 2012-06-07 | 2013-12-12 | Soitec | Gas injection components for deposition systems, deposition systems including such components, and related methods |
US20130330911A1 (en) | 2012-06-08 | 2013-12-12 | Yi-Chiau Huang | Method of semiconductor film stabilization |
USD723330S1 (en) | 2012-06-11 | 2015-03-03 | Barry Dean York | Debris mask and basin |
US8722546B2 (en) * | 2012-06-11 | 2014-05-13 | Asm Ip Holding B.V. | Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control |
US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US9984866B2 (en) | 2012-06-12 | 2018-05-29 | Component Re-Engineering Company, Inc. | Multiple zone heater |
US20130337653A1 (en) | 2012-06-15 | 2013-12-19 | Asm Ip Holding B.V. | Semiconductor processing apparatus with compact free radical source |
US8962078B2 (en) | 2012-06-22 | 2015-02-24 | Tokyo Electron Limited | Method for depositing dielectric films |
US8933375B2 (en) | 2012-06-27 | 2015-01-13 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
US10535735B2 (en) | 2012-06-29 | 2020-01-14 | Intel Corporation | Contact resistance reduced P-MOS transistors employing Ge-rich contact layer |
USD705762S1 (en) | 2012-07-04 | 2014-05-27 | Sercomm Corporation | Communication device having multi-module assembly |
US9023737B2 (en) | 2012-07-11 | 2015-05-05 | Asm Ip Holding B.V. | Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment |
US9630284B2 (en) | 2012-07-12 | 2017-04-25 | Lincoln Global, Inc. | Configurable welding table and force indicating clamp |
US8784950B2 (en) | 2012-07-16 | 2014-07-22 | Asm Ip Holding B.V. | Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group |
JP2015525774A (ja) | 2012-07-20 | 2015-09-07 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Ald/cvdシリコン含有膜用のオルガノシラン前駆体 |
US20140023794A1 (en) | 2012-07-23 | 2014-01-23 | Maitreyee Mahajani | Method And Apparatus For Low Temperature ALD Deposition |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9911676B2 (en) | 2012-07-27 | 2018-03-06 | Asm Ip Holding B.V. | System and method for gas-phase passivation of a semiconductor surface |
US9117866B2 (en) | 2012-07-31 | 2015-08-25 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
US8911826B2 (en) | 2012-08-02 | 2014-12-16 | Asm Ip Holding B.V. | Method of parallel shift operation of multiple reactors |
US9514932B2 (en) | 2012-08-08 | 2016-12-06 | Applied Materials, Inc. | Flowable carbon for semiconductor processing |
US8664627B1 (en) | 2012-08-08 | 2014-03-04 | Asm Ip Holding B.V. | Method for supplying gas with flow rate gradient over substrate |
US8912070B2 (en) | 2012-08-16 | 2014-12-16 | The Institute of Microelectronics Chinese Academy of Science | Method for manufacturing semiconductor device |
US9370757B2 (en) | 2012-08-21 | 2016-06-21 | Uop Llc | Pyrolytic reactor |
US9707530B2 (en) | 2012-08-21 | 2017-07-18 | Uop Llc | Methane conversion apparatus and process using a supersonic flow reactor |
US9169975B2 (en) | 2012-08-28 | 2015-10-27 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US8742668B2 (en) | 2012-09-05 | 2014-06-03 | Asm Ip Holdings B.V. | Method for stabilizing plasma ignition |
US9171715B2 (en) | 2012-09-05 | 2015-10-27 | Asm Ip Holding B.V. | Atomic layer deposition of GeO2 |
KR102132427B1 (ko) | 2012-09-07 | 2020-07-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 멀티-챔버 진공 시스템 확인 내에서의 다공성 유전체, 폴리머-코팅된 기판들 및 에폭시의 통합 프로세싱 |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
JP5882167B2 (ja) | 2012-09-13 | 2016-03-09 | 東京エレクトロン株式会社 | 熱処理装置 |
US20140077240A1 (en) | 2012-09-17 | 2014-03-20 | Radek Roucka | Iv material photonic device on dbr |
US11149370B2 (en) | 2012-09-19 | 2021-10-19 | Apjet, Inc. | Atmospheric-pressure plasma processing apparatus and method |
US8921207B2 (en) | 2012-09-24 | 2014-12-30 | Asm Ip Holding B.V., Inc. | Tin precursors for vapor deposition and deposition processes |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
JP6042160B2 (ja) | 2012-10-03 | 2016-12-14 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
US20140099798A1 (en) | 2012-10-05 | 2014-04-10 | Asm Ip Holding B.V. | UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same |
US9353441B2 (en) | 2012-10-05 | 2016-05-31 | Asm Ip Holding B.V. | Heating/cooling pedestal for semiconductor-processing apparatus |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
JP2014086472A (ja) | 2012-10-19 | 2014-05-12 | Sinfonia Technology Co Ltd | クランプ装置及びワーク搬送ロボット |
US9064948B2 (en) | 2012-10-22 | 2015-06-23 | Globalfoundries Inc. | Methods of forming a semiconductor device with low-k spacers and the resulting device |
US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
US9230815B2 (en) | 2012-10-26 | 2016-01-05 | Appled Materials, Inc. | Methods for depositing fluorine/carbon-free conformal tungsten |
US20140116335A1 (en) | 2012-10-31 | 2014-05-01 | Asm Ip Holding B.V. | UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation Apparatus |
JP5960028B2 (ja) | 2012-10-31 | 2016-08-02 | 東京エレクトロン株式会社 | 熱処理装置 |
US9330899B2 (en) | 2012-11-01 | 2016-05-03 | Asm Ip Holding B.V. | Method of depositing thin film |
US9105587B2 (en) | 2012-11-08 | 2015-08-11 | Micron Technology, Inc. | Methods of forming semiconductor structures with sulfur dioxide etch chemistries |
US8784951B2 (en) | 2012-11-16 | 2014-07-22 | Asm Ip Holding B.V. | Method for forming insulation film using non-halide precursor having four or more silicons |
US9190486B2 (en) | 2012-11-20 | 2015-11-17 | Globalfoundries Inc. | Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance |
CN104822866B (zh) | 2012-11-27 | 2017-09-01 | 索泰克公司 | 具有可互换气体喷射器的沉积系统和相关的方法 |
KR102046976B1 (ko) | 2012-12-04 | 2019-12-02 | 삼성전자주식회사 | 반도체 메모리 장치 및 그 제조 방법 |
US9362092B2 (en) | 2012-12-07 | 2016-06-07 | LGS Innovations LLC | Gas dispersion disc assembly |
US9123577B2 (en) | 2012-12-12 | 2015-09-01 | Sandisk Technologies Inc. | Air gap isolation in non-volatile memory using sacrificial films |
US10240230B2 (en) | 2012-12-18 | 2019-03-26 | Seastar Chemicals Inc. | Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers |
US9064857B2 (en) | 2012-12-19 | 2015-06-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | N metal for FinFET |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US20140182053A1 (en) | 2012-12-29 | 2014-07-03 | Alexander Yeh Industry Co., Ltd. | Pullable drain plug |
KR20140089793A (ko) | 2013-01-07 | 2014-07-16 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
US10557190B2 (en) | 2013-01-24 | 2020-02-11 | Tokyo Electron Limited | Substrate processing apparatus and susceptor |
US9018093B2 (en) | 2013-01-25 | 2015-04-28 | Asm Ip Holding B.V. | Method for forming layer constituted by repeated stacked layers |
KR20140095738A (ko) | 2013-01-25 | 2014-08-04 | 삼성전자주식회사 | 트랜지스터 및 그 제조 방법 |
US8894870B2 (en) | 2013-02-01 | 2014-11-25 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
EP2765218A1 (en) | 2013-02-07 | 2014-08-13 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
US9184045B2 (en) | 2013-02-08 | 2015-11-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bottom-up PEALD process |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
KR20140102782A (ko) | 2013-02-14 | 2014-08-25 | 삼성전자주식회사 | 웨이퍼 이송용 블레이드 및 이를 포함하는 웨이퍼 이송 장치 |
JP5934665B2 (ja) | 2013-02-22 | 2016-06-15 | 東京エレクトロン株式会社 | 成膜方法、プログラム、コンピュータ記憶媒体及び成膜システム |
USD743357S1 (en) | 2013-03-01 | 2015-11-17 | Asm Ip Holding B.V. | Susceptor |
US8790743B1 (en) | 2013-03-04 | 2014-07-29 | Asm Ip Holding B.V. | Method for controlling cyclic plasma-assisted process |
US10170282B2 (en) | 2013-03-08 | 2019-01-01 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
USD702188S1 (en) | 2013-03-08 | 2014-04-08 | Asm Ip Holding B.V. | Thermocouple |
USD723153S1 (en) | 2013-03-08 | 2015-02-24 | Olen Borkholder | Recess ceiling fan bezel |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US8933528B2 (en) | 2013-03-11 | 2015-01-13 | International Business Machines Corporation | Semiconductor fin isolation by a well trapping fin portion |
US9312222B2 (en) | 2013-03-12 | 2016-04-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Patterning approach for improved via landing profile |
US20140273531A1 (en) | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES |
US9824881B2 (en) | 2013-03-14 | 2017-11-21 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US8841182B1 (en) | 2013-03-14 | 2014-09-23 | Asm Ip Holding B.V. | Silane and borane treatments for titanium carbide films |
US8846550B1 (en) | 2013-03-14 | 2014-09-30 | Asm Ip Holding B.V. | Silane or borane treatment of metal thin films |
US9564309B2 (en) | 2013-03-14 | 2017-02-07 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US20140273534A1 (en) | 2013-03-14 | 2014-09-18 | Tokyo Electron Limited | Integration of absorption based heating bake methods into a photolithography track system |
US8984962B2 (en) | 2013-03-15 | 2015-03-24 | H. Aaron Christmann | Rotatable torque-measuring apparatus and method |
CA2906193A1 (en) | 2013-03-15 | 2014-09-18 | Prime Group Alliance, Llc | Opposed piston internal combustion engine with inviscid layer sealing |
WO2014150260A1 (en) | 2013-03-15 | 2014-09-25 | Applied Materials, Inc | Process load lock apparatus, lift assemblies, electronic device processing systems, and methods of processing substrates in load lock locations |
US9865431B2 (en) | 2013-03-15 | 2018-01-09 | Applied Materials, Inc. | Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber |
US20140273530A1 (en) | 2013-03-15 | 2014-09-18 | Victor Nguyen | Post-Deposition Treatment Methods For Silicon Nitride |
US9666702B2 (en) | 2013-03-15 | 2017-05-30 | Matthew H. Kim | Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices |
JP6096547B2 (ja) | 2013-03-21 | 2017-03-15 | 東京エレクトロン株式会社 | プラズマ処理装置及びシャワープレート |
USD734377S1 (en) | 2013-03-28 | 2015-07-14 | Hirata Corporation | Top cover of a load lock chamber |
JP6134191B2 (ja) | 2013-04-07 | 2017-05-24 | 村川 惠美 | 回転型セミバッチald装置 |
US9142437B2 (en) | 2013-04-10 | 2015-09-22 | Globalfoundries Inc. | System for separately handling different size FOUPs |
US8864202B1 (en) | 2013-04-12 | 2014-10-21 | Varian Semiconductor Equipment Associates, Inc. | Spring retained end effector contact pad |
US9252024B2 (en) | 2013-05-17 | 2016-02-02 | Applied Materials, Inc. | Deposition chambers with UV treatment and methods of use |
US9365924B2 (en) | 2013-05-23 | 2016-06-14 | Asm Ip Holding B.V. | Method for forming film by plasma-assisted deposition using two-frequency combined pulsed RF power |
US9142393B2 (en) | 2013-05-23 | 2015-09-22 | Asm Ip Holding B.V. | Method for cleaning reaction chamber using pre-cleaning process |
US8900467B1 (en) | 2013-05-25 | 2014-12-02 | HGST Netherlands B.V. | Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis |
USD726365S1 (en) | 2013-05-29 | 2015-04-07 | Sis Resources Ltd. | Mouthpiece plug for electronic cigarette |
US9117657B2 (en) | 2013-06-07 | 2015-08-25 | Asm Ip Holding B.V. | Method for filling recesses using pre-treatment with hydrocarbon-containing gas |
US9245740B2 (en) | 2013-06-07 | 2016-01-26 | Dnf Co., Ltd. | Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same |
US9123510B2 (en) | 2013-06-12 | 2015-09-01 | ASM IP Holding, B.V. | Method for controlling in-plane uniformity of substrate processed by plasma-assisted process |
US20140367043A1 (en) | 2013-06-17 | 2014-12-18 | Applied Materials, Inc. | Method for fast and repeatable plasma ignition and tuning in plasma chambers |
EP3014651B8 (en) | 2013-06-26 | 2018-12-26 | Applied Materials, Inc. | Methods of depositing a metal alloy film |
US20150004798A1 (en) | 2013-06-28 | 2015-01-01 | Lam Research Corporation | Chemical deposition chamber having gas seal |
KR101767855B1 (ko) | 2013-07-02 | 2017-08-11 | 울트라테크 인크. | 격자 전위들을 제거하기 위한 급속 열적 프로세싱에 의한 헤테로에피택셜 층들의 형성 |
US9677176B2 (en) | 2013-07-03 | 2017-06-13 | Novellus Systems, Inc. | Multi-plenum, dual-temperature showerhead |
US20150010381A1 (en) | 2013-07-08 | 2015-01-08 | United Microelectronics Corp. | Wafer processing chamber and method for transferring wafer in the same |
JP5861676B2 (ja) | 2013-07-08 | 2016-02-16 | 株式会社安川電機 | 吸着構造、ロボットハンドおよびロボット |
USD705745S1 (en) | 2013-07-08 | 2014-05-27 | Witricity Corporation | Printed resonator coil |
US8940646B1 (en) | 2013-07-12 | 2015-01-27 | Lam Research Corporation | Sequential precursor dosing in an ALD multi-station/batch reactor |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US8986562B2 (en) | 2013-08-07 | 2015-03-24 | Ultratech, Inc. | Methods of laser processing photoresist in a gaseous environment |
US9396934B2 (en) | 2013-08-14 | 2016-07-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
WO2015026230A1 (en) | 2013-08-19 | 2015-02-26 | Asm Ip Holding B.V. | Twin-assembly of diverging semiconductor processing systems |
US9209033B2 (en) | 2013-08-21 | 2015-12-08 | Tel Epion Inc. | GCIB etching method for adjusting fin height of finFET devices |
US9190263B2 (en) | 2013-08-22 | 2015-11-17 | Asm Ip Holding B.V. | Method for forming SiOCH film using organoaminosilane annealing |
US9136108B2 (en) | 2013-09-04 | 2015-09-15 | Asm Ip Holding B.V. | Method for restoring porous surface of dielectric layer by UV light-assisted ALD |
US9484199B2 (en) | 2013-09-06 | 2016-11-01 | Applied Materials, Inc. | PECVD microcrystalline silicon germanium (SiGe) |
USD724553S1 (en) | 2013-09-13 | 2015-03-17 | Asm Ip Holding B.V. | Substrate supporter for semiconductor deposition apparatus |
USD716742S1 (en) | 2013-09-13 | 2014-11-04 | Asm Ip Holding B.V. | Substrate supporter for semiconductor deposition apparatus |
US10312127B2 (en) | 2013-09-16 | 2019-06-04 | Applied Materials, Inc. | Compliant robot blade for defect reduction |
US9284642B2 (en) | 2013-09-19 | 2016-03-15 | Asm Ip Holding B.V. | Method for forming oxide film by plasma-assisted processing |
US9378971B1 (en) | 2014-12-04 | 2016-06-28 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
US9018103B2 (en) | 2013-09-26 | 2015-04-28 | Lam Research Corporation | High aspect ratio etch with combination mask |
WO2015048303A1 (en) | 2013-09-26 | 2015-04-02 | Applied Materials, Inc | Pneumatic end effector apparatus, substrate transportation systems, and methods for transporting substrates |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
CN105493248B (zh) | 2013-09-30 | 2018-04-10 | 株式会社日立国际电气 | 半导体器件的制造方法、衬底处理装置、衬底处理系统及记录介质 |
US9396986B2 (en) | 2013-10-04 | 2016-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanism of forming a trench structure |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US9034717B2 (en) | 2013-10-16 | 2015-05-19 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor-on-insulator structure and method of fabricating the same |
US20150111374A1 (en) | 2013-10-18 | 2015-04-23 | International Business Machines Corporation | Surface treatment in a dep-etch-dep process |
JP5847783B2 (ja) | 2013-10-21 | 2016-01-27 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
US9343308B2 (en) | 2013-10-28 | 2016-05-17 | Asm Ip Holding B.V. | Method for trimming carbon-containing film at reduced trimming rate |
US9029272B1 (en) | 2013-10-31 | 2015-05-12 | Asm Ip Holding B.V. | Method for treating SiOCH film with hydrogen plasma |
KR20150052996A (ko) | 2013-11-07 | 2015-05-15 | 삼성디스플레이 주식회사 | 기판 이송 장치 및 이를 포함하는 박막 증착 장치 |
US9605343B2 (en) | 2013-11-13 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming conformal carbon films, structures conformal carbon film, and system of forming same |
USD739222S1 (en) | 2013-11-13 | 2015-09-22 | Jeff Chadbourne | Two-piece magnetic clamp |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
KR20150061179A (ko) | 2013-11-26 | 2015-06-04 | 에스케이하이닉스 주식회사 | 플라즈마 강화 기상 증착 |
US9620382B2 (en) | 2013-12-06 | 2017-04-11 | University Of Maryland, College Park | Reactor for plasma-based atomic layer etching of materials |
TW201525173A (zh) | 2013-12-09 | 2015-07-01 | Applied Materials Inc | 選擇性層沉積之方法 |
US9401273B2 (en) | 2013-12-11 | 2016-07-26 | Asm Ip Holding B.V. | Atomic layer deposition of silicon carbon nitride based materials |
US10431489B2 (en) | 2013-12-17 | 2019-10-01 | Applied Materials, Inc. | Substrate support apparatus having reduced substrate particle generation |
WO2015091781A2 (en) | 2013-12-18 | 2015-06-25 | Imec Vzw | Method of producing transition metal dichalcogenide layer |
US9362385B2 (en) | 2013-12-18 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for tuning threshold voltage of semiconductor device with metal gate structure |
US9478419B2 (en) | 2013-12-18 | 2016-10-25 | Asm Ip Holding B.V. | Sulfur-containing thin films |
US9245742B2 (en) | 2013-12-18 | 2016-01-26 | Asm Ip Holding B.V. | Sulfur-containing thin films |
KR20150073251A (ko) | 2013-12-20 | 2015-07-01 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
US9698035B2 (en) | 2013-12-23 | 2017-07-04 | Lam Research Corporation | Microstructures for improved wafer handling |
KR102146705B1 (ko) | 2013-12-23 | 2020-08-21 | 삼성전자주식회사 | 반도체 소자의 배선 구조물 및 그 형성 방법 |
US9406547B2 (en) | 2013-12-24 | 2016-08-02 | Intel Corporation | Techniques for trench isolation using flowable dielectric materials |
JP6247095B2 (ja) | 2013-12-27 | 2017-12-13 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
WO2015107009A1 (en) | 2014-01-17 | 2015-07-23 | Koninklijke Philips N.V. | Heating system comprising semiconductor light sources |
USD726884S1 (en) | 2014-02-04 | 2015-04-14 | Asm Ip Holding B.V. | Heater block |
USD725168S1 (en) | 2014-02-04 | 2015-03-24 | Asm Ip Holding B.V. | Heater block |
USD724701S1 (en) | 2014-02-04 | 2015-03-17 | ASM IP Holding, B.V. | Shower plate |
USD732145S1 (en) | 2014-02-04 | 2015-06-16 | Asm Ip Holding B.V. | Shower plate |
US9370863B2 (en) | 2014-02-04 | 2016-06-21 | Asm Ip Holding B.V. | Anti-slip end-effector for transporting workpiece |
USD720838S1 (en) | 2014-02-04 | 2015-01-06 | Asm Ip Holding B.V. | Shower plate |
TWI739285B (zh) | 2014-02-04 | 2021-09-11 | 荷蘭商Asm Ip控股公司 | 金屬、金屬氧化物與介電質的選擇性沉積 |
USD732644S1 (en) | 2014-02-04 | 2015-06-23 | Asm Ip Holding B.V. | Top plate |
US8993457B1 (en) | 2014-02-06 | 2015-03-31 | Cypress Semiconductor Corporation | Method of fabricating a charge-trapping gate stack using a CMOS process flow |
US9416447B2 (en) | 2014-02-07 | 2016-08-16 | HGST Netherlands B.V. | Method for line density multiplication using block copolymers and sequential infiltration synthesis |
US9281211B2 (en) | 2014-02-10 | 2016-03-08 | International Business Machines Corporation | Nanoscale interconnect structure |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US9576952B2 (en) | 2014-02-25 | 2017-02-21 | Globalfoundries Inc. | Integrated circuits with varying gate structures and fabrication methods |
US9425078B2 (en) | 2014-02-26 | 2016-08-23 | Lam Research Corporation | Inhibitor plasma mediated atomic layer deposition for seamless feature fill |
TWI667722B (zh) | 2014-02-27 | 2019-08-01 | 日商斯克林集團公司 | 基板處理裝置 |
KR20150104817A (ko) | 2014-03-06 | 2015-09-16 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
JP2015173230A (ja) | 2014-03-12 | 2015-10-01 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
JP6379550B2 (ja) | 2014-03-18 | 2018-08-29 | 東京エレクトロン株式会社 | 成膜装置 |
US9299557B2 (en) | 2014-03-19 | 2016-03-29 | Asm Ip Holding B.V. | Plasma pre-clean module and process |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
KR102308587B1 (ko) | 2014-03-19 | 2021-10-01 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
US20150267295A1 (en) | 2014-03-19 | 2015-09-24 | Asm Ip Holding B.V. | Removable substrate tray and assembly and reactor including same |
JP6275822B2 (ja) | 2014-03-20 | 2018-02-07 | 株式会社東芝 | 非水電解質電池用活物質、非水電解質電池用電極、非水電解質二次電池、電池パック及び非水電解質電池用活物質の製造方法 |
JP6270575B2 (ja) | 2014-03-24 | 2018-01-31 | 株式会社日立国際電気 | 反応管、基板処理装置及び半導体装置の製造方法 |
JP6304592B2 (ja) | 2014-03-25 | 2018-04-04 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US20150275355A1 (en) * | 2014-03-26 | 2015-10-01 | Air Products And Chemicals, Inc. | Compositions and methods for the deposition of silicon oxide films |
JP6254036B2 (ja) | 2014-03-31 | 2017-12-27 | 三菱重工業株式会社 | 三次元積層装置及び三次元積層方法 |
US9637823B2 (en) | 2014-03-31 | 2017-05-02 | Asm Ip Holding B.V. | Plasma atomic layer deposition |
US9343350B2 (en) | 2014-04-03 | 2016-05-17 | Asm Ip Holding B.V. | Anti-slip end effector for transporting workpiece using van der waals force |
US9663857B2 (en) | 2014-04-07 | 2017-05-30 | Asm Ip Holding B.V. | Method for stabilizing reaction chamber pressure |
KR102094470B1 (ko) | 2014-04-08 | 2020-03-27 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US10047435B2 (en) | 2014-04-16 | 2018-08-14 | Asm Ip Holding B.V. | Dual selective deposition |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
US9464352B2 (en) | 2014-05-02 | 2016-10-11 | Asm Ip Holding B.V. | Low-oxidation plasma-assisted process |
KR102168792B1 (ko) | 2014-05-08 | 2020-10-23 | 스트라타시스 엘티디. | 선택적 소결에 의한 3d 프린팅 방법 및 장치 |
TWI518751B (zh) | 2014-05-14 | 2016-01-21 | 國立清華大學 | 成分元素濃度漸變分佈之載子通道及其製作方法 |
US9343343B2 (en) | 2014-05-19 | 2016-05-17 | Asm Ip Holding B.V. | Method for reducing particle generation at bevel portion of substrate |
US9257557B2 (en) | 2014-05-20 | 2016-02-09 | Globalfoundries Inc. | Semiconductor structure with self-aligned wells and multiple channel materials |
US9577192B2 (en) | 2014-05-21 | 2017-02-21 | Sony Semiconductor Solutions Corporation | Method for forming a metal cap in a semiconductor memory device |
USD733262S1 (en) | 2014-05-22 | 2015-06-30 | Young Boung Kang | Disposer of connection member for kitchen sink bowl |
JP2016005900A (ja) | 2014-05-27 | 2016-01-14 | パナソニックIpマネジメント株式会社 | ガスバリア膜、ガスバリア膜付きフィルム基板およびこれを備えた電子デバイス。 |
US20150348755A1 (en) | 2014-05-29 | 2015-12-03 | Charm Engineering Co., Ltd. | Gas distribution apparatus and substrate processing apparatus including same |
US10978315B2 (en) * | 2014-05-30 | 2021-04-13 | Ebara Corporation | Vacuum evacuation system |
US9773683B2 (en) | 2014-06-09 | 2017-09-26 | American Air Liquide, Inc. | Atomic layer or cyclic plasma etching chemistries and processes |
US10998228B2 (en) | 2014-06-12 | 2021-05-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned interconnect with protection layer |
USD743513S1 (en) | 2014-06-13 | 2015-11-17 | Asm Ip Holding B.V. | Seal ring |
USD753629S1 (en) | 2014-06-19 | 2016-04-12 | Yamaha Corporation | Speaker |
US20150367253A1 (en) | 2014-06-24 | 2015-12-24 | Us Synthetic Corporation | Photoluminescent thin-layer chromatography plate and methods for making same |
US20150380296A1 (en) | 2014-06-25 | 2015-12-31 | Lam Research Corporation | Cleaning of carbon-based contaminants in metal interconnects for interconnect capping applications |
US9825191B2 (en) | 2014-06-27 | 2017-11-21 | Sunpower Corporation | Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials |
US9349620B2 (en) | 2014-07-09 | 2016-05-24 | Asm Ip Holdings B.V. | Apparatus and method for pre-baking substrate upstream of process chamber |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9617638B2 (en) | 2014-07-30 | 2017-04-11 | Lam Research Corporation | Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9349637B2 (en) | 2014-08-21 | 2016-05-24 | Lam Research Corporation | Method for void-free cobalt gap fill |
USD742202S1 (en) | 2014-09-11 | 2015-11-03 | Thomas Jason Cyphers | Sign frame key |
US9576792B2 (en) | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
US9214333B1 (en) | 2014-09-24 | 2015-12-15 | Lam Research Corporation | Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD |
WO2016048306A1 (en) | 2014-09-24 | 2016-03-31 | Intel Corporation | Scaled tfet transistor formed using nanowire with surface termination |
US9478414B2 (en) | 2014-09-26 | 2016-10-25 | Asm Ip Holding B.V. | Method for hydrophobization of surface of silicon-containing film by ALD |
US10811271B2 (en) | 2014-09-30 | 2020-10-20 | Kokusai Electric Corporation | Substrate processing device, manufacturing method for semiconductor device, and reaction tube |
US9558946B2 (en) | 2014-10-03 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods of forming FinFETs |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
JP2016108656A (ja) | 2014-10-13 | 2016-06-20 | ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー | 銅色塗料、その作製プロセス及びその適用 |
US9530787B2 (en) | 2014-10-20 | 2016-12-27 | Sandisk Technologies Llc | Batch contacts for multiple electrically conductive layers |
KR101535573B1 (ko) | 2014-11-04 | 2015-07-13 | 연세대학교 산학협력단 | 전이금속 칼코겐 화합물 합성 방법 |
KR102268187B1 (ko) | 2014-11-10 | 2021-06-24 | 삼성전자주식회사 | 자기 기억 소자 및 그 제조 방법 |
US9305836B1 (en) | 2014-11-10 | 2016-04-05 | International Business Machines Corporation | Air gap semiconductor structure with selective cap bilayer |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
CN107208262B (zh) | 2014-11-21 | 2019-09-13 | 应用材料公司 | 醇类辅助ald膜沉积 |
US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
JP6086892B2 (ja) | 2014-11-25 | 2017-03-01 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US9837281B2 (en) | 2014-11-26 | 2017-12-05 | Asm Ip Holding B.V. | Cyclic doped aluminum nitride deposition |
US9384998B2 (en) | 2014-12-04 | 2016-07-05 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
US9406683B2 (en) | 2014-12-04 | 2016-08-02 | International Business Machines Corporation | Wet bottling process for small diameter deep trench capacitors |
US20160168699A1 (en) | 2014-12-12 | 2016-06-16 | Asm Ip Holding B.V. | Method for depositing metal-containing film using particle-reduction step |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US9515072B2 (en) | 2014-12-26 | 2016-12-06 | Taiwan Semiconductor Manufacturing Company Ltd. | FinFET structure and method for manufacturing thereof |
US9324846B1 (en) | 2015-01-08 | 2016-04-26 | Globalfoundries Inc. | Field plate in heterojunction bipolar transistor with improved break-down voltage |
USD753269S1 (en) | 2015-01-09 | 2016-04-05 | Asm Ip Holding B.V. | Top plate |
US9396956B1 (en) * | 2015-01-16 | 2016-07-19 | Asm Ip Holding B.V. | Method of plasma-enhanced atomic layer etching |
US9496040B2 (en) | 2015-01-22 | 2016-11-15 | Sandisk Technologies Llc | Adaptive multi-page programming methods and apparatus for non-volatile memory |
JP6470057B2 (ja) | 2015-01-29 | 2019-02-13 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US10228291B2 (en) | 2015-02-25 | 2019-03-12 | Kokusai Electric Corporation | Substrate processing apparatus, and thermocouple |
US10052044B2 (en) | 2015-03-06 | 2018-08-21 | Ethicon Llc | Time dependent evaluation of sensor data to determine stability, creep, and viscoelastic elements of measures |
US9808246B2 (en) | 2015-03-06 | 2017-11-07 | Ethicon Endo-Surgery, Llc | Method of operating a powered surgical instrument |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
IL237775B (en) | 2015-03-16 | 2019-03-31 | Redler Tech Ltd | Automatic, highly reliable, fully redundant electornic circuit breaker that includes means for preventing short-circuit overcurrent |
US10566187B2 (en) | 2015-03-20 | 2020-02-18 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
JP6484478B2 (ja) | 2015-03-25 | 2019-03-13 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
JP6458595B2 (ja) | 2015-03-27 | 2019-01-30 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法並びに記憶媒体 |
US9777025B2 (en) | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
US9691771B2 (en) | 2015-04-16 | 2017-06-27 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films |
US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
US11384432B2 (en) | 2015-04-22 | 2022-07-12 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
US9343297B1 (en) | 2015-04-22 | 2016-05-17 | Asm Ip Holding B.V. | Method for forming multi-element thin film constituted by at least five elements by PEALD |
JP2016213475A (ja) | 2015-05-13 | 2016-12-15 | 東京エレクトロン株式会社 | シュリンク及び成長方法を使用する極端紫外線感度低下 |
JP1547057S (ko) | 2015-05-28 | 2016-04-04 | ||
US9711350B2 (en) | 2015-06-03 | 2017-07-18 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation |
JP1545222S (ko) | 2015-06-10 | 2016-03-07 | ||
US10053774B2 (en) | 2015-06-12 | 2018-08-21 | Asm Ip Holding B.V. | Reactor system for sublimation of pre-clean byproducts and method thereof |
US20160362813A1 (en) | 2015-06-12 | 2016-12-15 | Applied Materials, Inc. | Injector for semiconductor epitaxy growth |
US9646883B2 (en) | 2015-06-12 | 2017-05-09 | International Business Machines Corporation | Chemoepitaxy etch trim using a self aligned hard mask for metal line to via |
US9711396B2 (en) | 2015-06-16 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming metal chalcogenide thin films on a semiconductor device |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US20160379851A1 (en) | 2015-06-29 | 2016-12-29 | Bharath Swaminathan | Temperature controlled substrate processing |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
JP6578243B2 (ja) | 2015-07-17 | 2019-09-18 | 株式会社Kokusai Electric | ガス供給ノズル、基板処理装置、半導体装置の製造方法およびプログラム |
US20170025291A1 (en) | 2015-07-22 | 2017-01-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-chamber furnace for batch processing |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
JP6560924B2 (ja) | 2015-07-29 | 2019-08-14 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
US10309011B2 (en) | 2015-07-29 | 2019-06-04 | Korea Research Institute Of Standards And Science | Method for manufacturing two-dimensional transition metal dichalcogemide thin film |
KR102420087B1 (ko) | 2015-07-31 | 2022-07-12 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US10566185B2 (en) | 2015-08-05 | 2020-02-18 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9978610B2 (en) | 2015-08-21 | 2018-05-22 | Lam Research Corporation | Pulsing RF power in etch process to enhance tungsten gapfill performance |
US10410857B2 (en) | 2015-08-24 | 2019-09-10 | Asm Ip Holding B.V. | Formation of SiN thin films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US11514096B2 (en) | 2015-09-01 | 2022-11-29 | Panjiva, Inc. | Natural language processing for entity resolution |
JP1546345S (ko) | 2015-09-04 | 2016-03-22 | ||
JP6448502B2 (ja) | 2015-09-09 | 2019-01-09 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置及びプログラム |
US10373809B2 (en) | 2015-09-25 | 2019-08-06 | Applied Materials Inc. | Grooved backing plate for standing wave compensation |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
KR102395997B1 (ko) | 2015-09-30 | 2022-05-10 | 삼성전자주식회사 | 자기 저항 메모리 소자 및 그 제조 방법 |
US10695794B2 (en) | 2015-10-09 | 2020-06-30 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
WO2017062852A1 (en) | 2015-10-09 | 2017-04-13 | Applied Materials, Inc. | Diode laser for wafer heating for epi processes |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
TWI740848B (zh) | 2015-10-16 | 2021-10-01 | 荷蘭商Asm智慧財產控股公司 | 實施原子層沉積以得閘極介電質 |
JP6464990B2 (ja) | 2015-10-21 | 2019-02-06 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
KR102424720B1 (ko) | 2015-10-22 | 2022-07-25 | 삼성전자주식회사 | 수직형 메모리 장치 및 이의 제조 방법 |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
USD787458S1 (en) | 2015-11-18 | 2017-05-23 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US20170178899A1 (en) | 2015-12-18 | 2017-06-22 | Lam Research Corporation | Directional deposition on patterned structures |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
CH711990A2 (de) | 2015-12-22 | 2017-06-30 | Interglass Tech Ag | Vakuumbeschichtungsanlage zum Beschichten von Linsen. |
AT518081B1 (de) | 2015-12-22 | 2017-07-15 | Sico Tech Gmbh | Injektor aus Silizium für die Halbleiterindustrie |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US9633838B2 (en) | 2015-12-28 | 2017-04-25 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition of silicon-containing films using penta-substituted disilanes |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
TWD178425S (zh) | 2016-01-08 | 2016-09-21 | ASM知識產權私人控股有	 | 用於半導體製造設備的電極板 |
TWD178424S (zh) | 2016-01-08 | 2016-09-21 | ASM知識產權私人控股有	 | 用於半導體製造設備的氣流控制板 |
TWD178698S (zh) | 2016-01-08 | 2016-10-01 | ASM知識產權私人控股有	 | 用於半導體製造設備的反應器外壁 |
US9412648B1 (en) | 2016-01-11 | 2016-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via patterning using multiple photo multiple etch |
JP6538582B2 (ja) | 2016-02-15 | 2019-07-03 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US9748145B1 (en) | 2016-02-29 | 2017-08-29 | Globalfoundries Inc. | Semiconductor devices with varying threshold voltage and fabrication methods thereof |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10319583B2 (en) | 2016-03-13 | 2019-06-11 | Applied Materials, Inc. | Selective deposition of silicon nitride films for spacer applications |
KR20170107323A (ko) | 2016-03-15 | 2017-09-25 | 연세대학교 산학협력단 | 전이금속 칼코겐 화합물 합금 및 그의 제조방법 |
US10134672B2 (en) | 2016-03-15 | 2018-11-20 | Toshiba Memory Corporation | Semiconductor memory device having a stepped structure and contact wirings formed thereon |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
JP6566904B2 (ja) | 2016-03-29 | 2019-08-28 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6095825B2 (ja) | 2016-04-08 | 2017-03-15 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
WO2017212546A1 (ja) | 2016-06-07 | 2017-12-14 | 株式会社日立国際電気 | 基板処理装置、炉口部および半導体装置の製造方法並びにプログラム |
US10002958B2 (en) | 2016-06-08 | 2018-06-19 | The United States Of America, As Represented By The Secretary Of The Navy | Diamond on III-nitride device |
USD785766S1 (en) | 2016-06-15 | 2017-05-02 | Asm Ip Holding B.V. | Shower plate |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
WO2018003072A1 (ja) | 2016-06-30 | 2018-01-04 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
KR102165711B1 (ko) | 2016-07-05 | 2020-10-14 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 가스 노즐 및 반도체 장치의 제조 방법 |
US9812319B1 (en) | 2016-07-06 | 2017-11-07 | Asm Ip Holding B.V. | Method for forming film filled in trench without seam or void |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
USD793352S1 (en) | 2016-07-11 | 2017-08-01 | Asm Ip Holding B.V. | Getter plate |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
JP6616258B2 (ja) | 2016-07-26 | 2019-12-04 | 株式会社Kokusai Electric | 基板処理装置、蓋部カバーおよび半導体装置の製造方法 |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102613349B1 (ko) | 2016-08-25 | 2023-12-14 | 에이에스엠 아이피 홀딩 비.브이. | 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법 |
US10037884B2 (en) | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
JP6710130B2 (ja) | 2016-09-13 | 2020-06-17 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6710134B2 (ja) | 2016-09-27 | 2020-06-17 | 東京エレクトロン株式会社 | ガス導入機構及び処理装置 |
JP6550029B2 (ja) | 2016-09-28 | 2019-07-24 | 株式会社Kokusai Electric | 基板処理装置、ノズル基部および半導体装置の製造方法 |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
JP6737139B2 (ja) | 2016-11-14 | 2020-08-05 | 東京エレクトロン株式会社 | ガスインジェクタ、及び縦型熱処理装置 |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR102147174B1 (ko) | 2016-11-18 | 2020-08-28 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반응관 구조 및 반도체 장치의 제조 방법 |
JP6804270B2 (ja) | 2016-11-21 | 2020-12-23 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US20200013629A1 (en) | 2016-12-15 | 2020-01-09 | Asm Ip Holding B.V. | Semiconductor processing apparatus |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10049426B2 (en) | 2017-01-03 | 2018-08-14 | Qualcomm Incorporated | Draw call visibility stream |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
US9984869B1 (en) | 2017-04-17 | 2018-05-29 | Asm Ip Holding B.V. | Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gas |
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2016
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2017
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TW201833365A (zh) | 2018-09-16 |
CN108018539B (zh) | 2021-08-24 |
US20180119283A1 (en) | 2018-05-03 |
US10435790B2 (en) | 2019-10-08 |
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