TW201421599A - 用於動態半導體製程排程之系統與方法 - Google Patents

用於動態半導體製程排程之系統與方法 Download PDF

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TW201421599A
TW201421599A TW102129397A TW102129397A TW201421599A TW 201421599 A TW201421599 A TW 201421599A TW 102129397 A TW102129397 A TW 102129397A TW 102129397 A TW102129397 A TW 102129397A TW 201421599 A TW201421599 A TW 201421599A
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Keith R Lawson
Michael E Givens
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Asm Ip Holding Bv
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Abstract

本揭露內容之實施例能夠助於在半導體加工工具中增加產量以及減少資源衝突與延遲。根據本揭露之多種態樣的一種範例性方法包含以一電腦系統上所操作之一電腦程式分析用來完成被半導體加工工具執行的對應的複數個動作之每一者的複數個預期時間，該半導體加工工具包含一第一製程模組與一第二製程模組。該方法進一步包含以該電腦程式產生基於該分析的一晶圓加工計畫，其中該晶圓加工計畫於被加工工具實行時，導致該半導體加工工具用以：裝載一第一晶圓進入該第一製程模組；於裝載該第一晶圓進入該第一製程模組後，從該第二製程模組卸載一第二晶圓；從該第二製程模組卸載該第二晶圓之後，裝載第三晶圓進入該第一製程模組；以及於裝載該第三晶圓進入該第一製程模組後，從該第一製程模組卸載該第一晶圓。

Description

用於動態半導體製程排程之系統與方法
本揭露內容之多個實施例係針對用於供半導體加工工具動態排程之系統與方法。
多種半導體元件，諸如電晶體、二極體與積體電路，典型地於泛稱基板、晶圓及/或工件的一半導體材料的薄片上同時一起製作。於供製造諸等元件的一些方法中，該晶圓被傳送進一製程模組，於其中一材料的一薄膜或層被沉積於該晶圓的一曝露表面。一旦所希望的該半導體材料的層的厚度已被沉積於該晶圓的表面，該晶圓可於該製程模組內進行進一步加工，或其將從該製程模組內被移除以供封裝或額外的加工。於基板形成薄膜的方法包含真空蒸鍍、分子束磊晶、多樣的化學氣相沉積(CVD)，其包含低壓CVD、有機金屬CVD與電漿增強CVD，以及原子層磊晶(ALE)；ALE亦被稱為原子層沉積(ALD)。
於所有諸等製程中，通常值得嚮往的是將晶圓能夠被半導體加工系統處理的速度最大化，此亦為習知的產能。多重腔室加工工具通常利用軟體排程器以求製程工具的動作(例如於工具中不同部件間晶圓的轉移)以盡可能最有效的方式連貫。然而，習知排程器通常賦予顯著的重擔 給加工工具的操作員以手動地決定、規劃、以及校準該工具所採用動作的順序及時間。除了由在部分諸等作業員人為錯誤所肇生之浪費(亦即，報廢的晶圓)及無效率外，習知排程器可能無法使一多重腔室加工工具能夠同時地使用不同的配方來加工晶圓。
倚賴賦予該加工工具所採用的各種不同的動作固定的時間定義之習知排程器(常稱為「靜態排程」)，通常使用一動作可能花的最大時間，假若動作完成的比靜態定義的最大時間快，其依次地導致該加工工具不需要地等待動作間的長時間。此外，一靜態排程典型地必須在其能夠被修改或另一排程能夠執行前完成完整的晶圓收集。假若晶圓被具有多重加工模組的加工工具加工，由一習知排程器排程的動作順序可能無法與該加工工具的效能相容，且導致例如歸因於晶圓過曝於某些加工氣體之晶圓報廢。
基於工具部件之可用性而企圖分派該處理器工具的資源之習知排程器(常稱為「動態排程」)通常無法對資源衝突作估算，因此無法達到最佳化產能。再者，某些習知動態排程器以增加固定的延遲時間給不同製程階段來企圖克服資源衝突，其為了解決資源衝突更進一步降低產能。本揭露之實施例相對於習知排程方式以更有效率的方式幫助半導體加工工具執行動作，據此有助於將該等加工工具的產能最大化。
本揭露內容之實施例能夠助於在半導體加工工具中增加產量以及減少資源衝突與延遲。
根據本揭露內容之多種態樣的一種範例性方法包含以一電 腦系統上所操作之一電腦程式分析用來完成被半導體加工工具執行的對應的複數個動作之每一者的複數個預期時間，該半導體加工工具包含一第一製程模組與一第二製程模組。該方法進一步包含以該電腦程式產生基於該分析的一晶圓加工計畫，其中該晶圓加工計畫於被加工工具實行時，導致該半導體加工工具用以：裝載一第一晶圓進入該第一製程模組；於裝載該第一晶圓進入該第一製程模組後，從該第二製程模組卸載一第二晶圓；從該第二製程模組卸載該第二晶圓之後，裝載第三晶圓進入該第一製程模組；以及於裝載該第三晶圓進入該第一製程模組後，從該第一製程模組卸載該第一晶圓。
根據本揭露內容之多種態樣的一種範例性系統包含一半導體加工工具，其包含一第一製程模組與一第二製程模組。該系統進一步包含一電腦系統，其包括一處理器與耦合至該處理器之一記憶體，以及響應於該處理器運行之儲存指令，其導致該處理器執行操作，該等操作包含：分析完成被該半導體加工工具執行之一個別複數個動作之每一者的複數個預期時間，以及基於該分析產生一晶圓加工計畫。當該晶圓加工計畫被該加工工具運行時，該晶圓加工計畫被配置成導致該半導體加工工具用以：裝載一第一晶圓進入該第一製程模組；於裝載該第一晶圓進入該第一製程模組後，從該第二製程模組卸載一第二晶圓；從該第二製程模組卸載該第二晶圓之後，裝載第三晶圓進入該第一製程模組；以及於裝載該第三晶圓進入該第一製程模組後，從該第一製程模組卸載該第一晶圓。
以上發明內容以及隨後之實施方式兩者皆僅為範例性與解釋性且並非限制本揭露內容。
100‧‧‧系統
105‧‧‧左側裝載固鎖腔室(LLL)
107‧‧‧右側裝載固鎖腔室(RLL)
110‧‧‧晶圓處理腔室(WHC)
120‧‧‧第一製程模組(PM1)
125‧‧‧第二製程模組(PM2)
130‧‧‧第一裝載埠(LP1)
135‧‧‧第二裝載埠(LP2)
150‧‧‧控制系統
152‧‧‧處理器
154‧‧‧記憶體
156‧‧‧使用者介面
200‧‧‧方法
210‧‧‧步驟
220‧‧‧步驟
230‧‧‧區塊
232‧‧‧步驟
234‧‧‧步驟
236‧‧‧步驟
238‧‧‧步驟
240‧‧‧步驟
250‧‧‧步驟
260‧‧‧步驟
270‧‧‧步驟
300‧‧‧示意圖
310‧‧‧閒置期間
405‧‧‧卸載
407‧‧‧裝載
409‧‧‧加工時間
410‧‧‧卸載
420‧‧‧裝載
430‧‧‧閒置時間
500‧‧‧時間安排示意圖
510‧‧‧時間點
520‧‧‧時間點
530‧‧‧時間點
600‧‧‧時間安排示意圖
720‧‧‧時間
730‧‧‧時間
740‧‧‧時間
750‧‧‧時間
對於本揭露內容之實施例之更完整的了解可藉由參照實施方式與申請專利範圍並伴隨以下顯示圖式理解而得到。
圖1顯示根據本揭露之多種態樣之半導體加工系統之範例性實施例。
圖2係根據本揭露之多種態樣之範例性排程製程之流程圖。
圖3顯示利用一習知排程方法之半導體加工工具的範例。
圖4顯示根據本揭露之多種態樣之利用一排程方法之半導體加工工具的範例。
圖5顯示利用另一習知排程方法之半導體加工工具的範例。
圖6-7顯示根據本揭露之多種態樣之利用額外的排程方法之半導體加工工具的範例。
參照圖式，其中圖式的目的係描述而並非限制本揭露範例性實施例，一種範例性半導體加工系統100係描繪於圖1。於此範例性實施例中，系統100包含一左側裝載固鎖腔室(LLL)105、一右側裝載固鎖腔室(RLL)107、一晶圓處理腔室(WHC)110、一第一製程模組(PM1)120、一第二製程模組(PM2)125、一第一裝載埠(LP1)130以及一第二裝載埠(LP2)135。本揭露之實施例可能包含其他半導體加工系統或與之關聯操作，其可包含比圖1所示之更多、更少或不同的部件。
於該範例性系統100之該裝載固鎖腔室(105、107)係連接該WHC110以及該裝載埠(130、135)的中介腔室。於某些製程中，該裝載固鎖腔室(105、107)可能促進於在真空情況下的該WHC110與在周圍 或大氣壓力下的該裝載埠(130、135)之間的晶圓的轉移。該WHC110包含一機器人(未顯示)用以於該裝載固鎖腔室(105、107)及該製程模組(120、125)之間轉移晶圓。
晶圓係被裝載進入該製程模組(120、125)且被加工(例如，使用ALD、CVD以及如同先前所列之任何其他的加工方法)。每個製程模組(120、125)包含一反應腔室(未顯示)其容納該等晶圓。根據所採用的半導體製程的類型，各種不同的氣體可被泵入或移除自該反應腔室。於該反應腔室內之溫度與壓力亦可被提高或降低。該製程模組(120、125)可被用來執行任何其它所希望的加工步驟。
該加工系統100連同與本揭露實施例關聯操作之任何其他部件之功能，可以任何適當的方式施行，諸如經由處理器運算儲存在記憶體中的軟體指令。功能亦可以經由儲存機器可讀指令之各種硬體部件施行，諸如特殊應用積體電路(ASIC)，現場可程式化邏輯閘陣列(FPGA)及/或複式可程式化邏輯裝置(CPLD)。
於描繪於圖1的範例性系統中，半導體加工工具100的一些或全部的功能可經由控制系統150而被控制，該控制系統包含一處理器152，記憶體154以及使用者介面156。該系統100之獨立的部件(諸如於WHC中的機器人)亦可被其他軟體或硬體部件控制。於某些範例性實施例中，該控制系統150自動地產生晶圓加工計畫以控制該加工系統100所採用的連續動作，量測完成諸等動作所花的實際時間，以及基於該量測自動地校準將來的晶圓加工計畫。依此方式，本揭露之實施例可基於該系統100以及其獨立的部件的實際表現連續地更新晶圓加工計畫。控制系統150的 各部分可被整合至或遠離至系統100。
該處理器152檢索與執行儲存在記憶體154的指令以控制半導體加工系統100的各種部分。任何數量以及類型的處理器，諸如一積體電路微處理器、微控制器及/或數位訊號處理器(DSP)，可與本揭露之實施例關聯使用。該微處理器152可能包括任何其他諸如比較器、類比轉數位轉換器(ADC)及或數位轉類比轉換器(DAC)之合適部件或特製件，或與其關聯操作。
該記憶體154具有儲存可運算的指令、傳送至或接收自系統100的部件的資料、以及其他資訊的能力。與本揭露關連操作之一記憶體220可包含不同的電晶體與非電晶體記憶體儲存裝置之任何組合，諸如硬碟、隨機存取記憶體(RAM)、唯讀記憶體(ROM)，快閃(FLASH)記憶體，或任何其他類型的揮發性及/或非揮發性記憶體。用來控制與本揭露之實施例關聯操作的一半導體加工系統的功能之軟體，其可包含防止資源碰撞及/或對晶圓或該系統部件之損害的防衛。例如於某些範例性實施例中，假若第一與第二動作無法或不應被同時執行，用來控制一半導體加工工具的軟體可能包含一或多個信號(semaphore)用以防止該加工工具執行該第一動作直到該第二動作完成為止。
該控制系統150可能包含一操作系統(例如，Windows、OS2、UNIX、Linux、Solaris、MacOS等等)連同與典型電腦相關的各種習知支援軟體及驅動程式。儲存於記憶體中的軟體應用程式可能完全地或部分地被於本實施例中執行方法或製程的該處理器所服務或運算。
該控制系統150包含使用者介面156以允許使用者與該加工 系統100溝通。該使用者介面可能包含任何數量的輸入裝置，諸如鍵盤、滑鼠、觸控板、觸控螢幕、數字鍵盤、語音辨識系統、或其他輸入裝置，以允許使用者提供指令及資訊給本揭露的系統內的其他部件。類似地，該使用者介面可能包含任何數量的合適的輸出裝置，諸如監視器、喇叭、或其他用以提供資訊給一或多個使用者的其他裝置。
圖2描繪根據本揭露的多種態樣的一範例性方法，且可以被使用於任何合適的半導體加工設備，包含描繪於圖1的該系統100。圖2中之該方法可用關聯於本揭露之各種實施例之更多、更少、或不同的步驟被實行，亦可被硬體、軟體、或其兩者之結合而執行。如圖2所示，範例性方法200包含分析於加工一或更多晶圓時被一半導體加工工具採用的複數個動作，以及執行每個動作的個別預期時間(210)。該方法進一步包含基於該分析產生一晶圓加工計畫(220)以被該半導體加工工具運行。該方法進一步包含量測該半導體加工工具執行於該晶圓加工計畫中被定義的動作所花的實際時間(240)。該被量測的時間與用來產生該晶圓加工計畫的預期時間做比較(250)，且基於該比較，該量測時間被適當的更新(260)及/或警報被適當的產生(270)。
一半導體加工工具執行一組的動作以求加工一晶圓或一組晶圓，每個動作花費一段時間來完成。被分派於晶圓加工計畫用來執行此等動作的該時間於本文中被稱為「預期時間」。該用以完成一動作的預期時間可能隨著不同的半導體加工工具、隨著不同的製程配方、甚至於施行同樣的製程配方的多個晶圓加工計畫間，而不同。用於加工工具以完成任何動作或任何組動作的該預期時間舉例而言可依基於該加工工具製造商的規 格書的估計或依該工具實際完成該動作的時間的量測來決定。於本揭露的實施例中，該執行一個別動作或一群動作的預期時間被分析(210)以求產生一晶圓加工計畫(220)，其有助於最大化該製程工具之產能及效率。
本揭露的實施例可能分析被用以使用任何所希望的加工方法(例如CVD及/或ALD)加工一或多個晶圓的一半導體加工工具所採取的任何動作。舉例而言如同上文參照圖1之描述，晶圓處理腔室110可能包含一機器人，該機器人使用一或更多手臂，該等手臂攜帶一或一組晶圓，用以轉移至或轉移自該裝載固鎖(105、107)及製程模組(120、125)。於此情況下，用來處理機器人轉移晶圓的該預期可能非常相依於該機器人的手臂剛開始轉移的定位以及該被轉及的晶圓的位置。於一範例中，當在該機器手臂被排程以轉移一晶圓從該左側裝載固鎖(LLL)105轉移至該第一製程模組(PM1)之前該機器手臂近接於該LLL 105時，該轉移的預期時間短於假使該機器手臂已開始轉移至該LLL 105末端而要求其開始移動近接於該LLL 105以收回晶圓的時間。相似地，假使該晶圓處理機器人係從該PM1 120轉移一晶圓至LLL 105，該轉移的預期時間係短於當該機器的手臂相對於該PM1末端開始轉移近接至該PM1。
雖然習知排程器可以簡單的分派最大段的時間給該機器人轉移一晶圓，本揭露的實施例可分析該半導體加工工具之部件的狀態(諸如該晶圓處理機器人的定位)而產生一晶圓加工計畫，其免除了諸等不必要的延遲，且據此有助於增進產能。除了分析獨立的動作以及其個別的時間外，本揭露之實施例可以分析相關於使用一半導體工具處理晶圓的預期時間之總和。
可被分析的任何動作或任何一群動作(以及其預期時間)，其包含(關於描繪於圖1的範例性系統)：用以從該晶圓處理腔室110轉移一晶圓至該第一製程模組120的一預期時間、用以從該第一製程模組120轉移一晶圓至該晶圓處理腔室110的一預期時間、用以從該晶圓處理腔室110轉移一晶圓至該第二製程模組125的一預期時間、及/或用以從該第二製程模組125轉移一晶圓至該晶圓處理腔室110的一預期時間。類似地，本揭露的實施例可分析：用以從轉移一晶圓至一(105、107)的預期時間、用以轉移一晶圓至該晶圓處理腔室110的預期時間、用以從一裝載固鎖(105、107)轉移一晶圓至一裝載埠(130、135)的預期時間、用以從一製程模組(120、125)清除一氣體的預期時間、以及用以於一製程模組(120、125)或騎一部分增加或將低溫度及/或壓力的預期時間之一或多者。
於多種實施例中，該晶圓處理計畫較佳的系配置以最大化產能以及最小化系統衝突與加工期間之延遲。據此，分析被該半導體加工工具執行的預期時間之分析可能亦包含分析該工具的任何部件係閒置的時段，包含該裝載固鎖(105、107)、晶圓處理腔室110、製程模組(120、125)、及/或該工具的任何部件。本揭露之實施例亦可分析用以被該工具執行的一組的晶圓製程分派，舉例而言，在接續的分派中被採用的步驟間辨識信號及/或衝突。
方法200的區塊230展示範例性的一組步驟，其響應於在步驟220產生之該晶圓加工計畫而被該半導體加工工具執行。於此範例，當該晶圓加工計畫被該半導體加工工具運行時，該晶圓加工計畫導致該加工工具100用以：裝載一第一晶圓進入該第一製程模組；於裝載該第一晶圓 進入該第一製程模組後，從該第二製程模組卸載一第二晶圓；從該第二製程模組卸載該第二晶圓之後，裝載第三晶圓進入該第一製程模組；以及於裝載該第三晶圓進入該第一製程模組後，從該第一製程模組卸載該第一晶圓。該裝載/卸載串列可被重複，據此導致一裝載，卸載，裝載，卸載的模式(「LULU」)，其可於更種情況中相較於習知排程，其遵循一裝載，裝載，卸載，卸載模式(「LLUU」)，而提供更多有利的產能。使用於關聯於本揭露之實施例之該LULU模式之優點的範例將於以下細節討論。
該晶圓加工計畫能夠以任何合適的方式被配置用以增加半導體加工工具的產能以及最小化資源衝突。舉例而言，於利用上述該LULU晶圓處理模式的某些範例性實施例中，該晶圓加工計畫可以將在該晶圓處理腔室110從該第一製程模組120卸載該第一晶圓之前的閒置時間降低至大約等於在該晶圓處理腔室110裝載該第三晶圓進入該第一製程模組120之後的閒置時間。換言之，該晶圓處理計畫開始該第二晶圓的加工使得該晶圓處理腔室110的閒置時間於卸載該第一晶圓之前與裝載該第三晶圓之後係相等分布。除此之外，此方式可有助於將低該製程模組(120、125)之閒置時間，據此有助於增加產能與最小化資源衝突。
該範例性方法200進一步包含量測該加工系統完成於一晶圓加工計畫中的每個動作所需要的實際時間(240)，然後比較該量測時間與用來規劃該晶圓加工計畫之該預期時間(250)。隨著該比較的結果，該預期時間可被適當的更新(260)。例如，假使一動作的量測時間與其預期時間間的差異超過一預先決定的量，該預期時間將被更新(例如，以該量測時間取代該預期時間，或以該量測時間與該預期時間的平均取代該預期 時間)用於接續的晶圓加工計畫。除此之外，此方式允許本揭露之實施例連續的改善該晶圓加工計畫盡可能的正確，連帶估算歸因於機器壽命以及其它因素造成得時間的改變。
半導體工具動作的預期時間的量測與更新可於每個晶圓加工計畫、周期性地或於任何所希望的特定時間自動地被執行或由該工具的操作員所執行。若需要，該預期時間的更新可被自動地或於該工具的操作員授權下執行。被該加工工具所採用的動作的預期時間可被執行任何次數。舉例而言，某些範例性的實施例可能包含基於一個別複數個動作的第一複數個預期時間產生依第一晶圓加工計畫，量測該半導體加工工具於該第一晶圓加工計畫所執行的複數個動作的實際時間，基於該第一晶圓加工計畫的該量測時間自該第一複數個預期時間修改至少一時間來產生一第二複數個時間，以及基於該第二複數個時間產生一第二晶圓加工計畫。
該製程舉例而言可能藉由：量測該半導體加工工具於該第二晶圓加工計畫執行該複數的動作的實際時間、基於該第二晶圓加工計畫的該量測時間自該第二複數個預期時間修改至少一時間來產生一第三複數個時間，以及基於該第三複數個時間產生一第三晶圓加工計畫；來持續任何數量的額外次數。
該範例性方法200可能進一步包含基於一量測時間與一預期時間的比較產生一警報(例如藉由控制系統150的使用者介面156的警報)(270)。該警報可能根據任何所希望的標準所產生，諸如當該量測時間與該預期時間的差異超過一預先決定的閾值，及/或假使一動作的該量測時間符合或超過一特定值。此方式允許本揭露之實施例不僅適合於隨時間改變 一半導體加工工具，亦適合快速地辨識以及警報作業員工具中的潛在的部件故障。該警報可能包含任何所希望的資訊以幫助一作業員診斷出該加工工具之問題，諸如該加工工具一部件的一標示，該加工工具可能故障且導致預期時間與量測時間之間一顯著的差異。
一動作或一群動作的量測時間可能與預期及/或量測時間的一資料庫作比較。除此之外，此方式允許實施例去追溯以及辨識工具的表現之細微的降級以及若需要的話，允許早一步的警告操作員該工具的一部件替換或保修可能係需要的。於某些實施例中，該加工工具的一或多個部件可能被失效以防止進一步的系統的損害，特別是假如碰上嚴重錯誤時。
本文描述之本揭露之實施例被配置成產生一晶圓加工計畫，其適用於一單一晶圓、一群晶圓、及/或多數組晶圓。某些實施例可能被配置成協調於二或更多的晶圓加工計畫中採取的動作，以助於將半導體加工裝置之產能最大化。此外，某些實施例可配置成分析一或多個既存的晶圓加工計畫(無論排隊等候運行、進行運行中，或以運行完畢)以產生接續晶圓加工計畫以有助於確立於多個晶圓加工計畫中的動作係可並存且減少資源衝突。
圖3展示習知排程器以範例性系統100加工晶圓之一時間安排示意圖。於此情況中，該習知排程器於先前所述「LULU」模式下首先裝載該第一製程模組120，然後裝載該第二製程模組125，接著卸載該第一製程模組120以及卸載該第二製程模組125。示意圖300展示該右側裝載固鎖(RLL)107、晶圓處理腔室(WHC)110、第一製程模組(PM1)120以及第二製程模組(PM2)125之活動與非活動的相關期間。該最輕的陰影片段 代表用於加工一第一晶圓的動作，該黑色片段代表用於加工一第二晶圓的動作，以及該中間的陰影片段代表加工一第三晶圓的動作。
如時間安排示意圖300所示，該習知排程器首先於PM1 120中開始加工該第一晶圓，一旦工具100的資源(亦即該RLL 107與WHC 110)係空閒而可轉移該第二晶圓至PM2 125該，而開始加工該第二晶圓。該第三晶圓的加工不能開始直到該第一與第二晶圓皆已返還至該RLL 107，而導至於該PM1 120中具有一顯著的閒置期間，其標誌為元件符號310。
圖4展示一時間安排示意圖，其顯示半導體加工工具100依照符合本揭露之實施例之晶圓加工計畫加工三個晶圓。於此範例，該晶圓加工計畫導致該加工工具100遵循一如上述之LULU模式。此外於此範例，該第二晶圓的加工被排程，俾使得該第一晶圓自PM1 120的卸載(405)與該第二晶圓進入PM2 125的裝載(407)係被執行於該第三晶圓的加工時間(409)內。除此之外，此方式有助於縮短PM1 120的該閒置期間且增加整體產能，如同相關地自該小閒置時間430相比於該大得多的圖3中閒置期間310所示。此外，該晶圓加工計畫分配WHC 110之該閒置期間，俾使得WHC 110的該閒置期間被分配成於卸載(410)該第一晶圓前之時間大約相等於裝載(420)該第三晶圓後之時間。
該閒置期間之分配可被供應至關聯於本揭露之實施例之一半導體加工工具之任何部件。用於一資源之該閒置期間之分配可被提供依照任何所希望的標準。舉例而言，當開始於一第一製程模組中處理一晶圓，假使一第二製程模組的該晶圓交換時間係少於該第一製程模組的製程時間，於該第一製程模組的晶圓加工可被延遲直到於該晶圓交換時間與該製 程時間之間的差異係於該晶圓於該第二製程模組中交換之前後大約相等分配。此方法之優點係達到有助於最小化該製程模組/反應器的閒置時間，其於下文搭配圖7所展示。
圖5展示由使用基於串接的演算法之習知排程器所導致的無效率。於圖5，時間安排示意圖500顯示三晶圓(以輕、中、深之陰影表明)的加工，其具有連接每個模組的垂直線以表明一同步的晶圓轉移動作。於此範例，一習知排程器無法排程該半導體加工工具的該等操作於製程期間得至少三時間點上。舉例而言，於510上，因為該WHC正忙於裝載PM1，一晶圓無法立即裝載進入PM2；於520上，因為該WHC正忙於卸載PM1，一晶圓無法立即於加工完成後從PM2卸載；且於530上，因為該WHC正忙於卸載PM2，一晶圓無法立即裝載進入PM1。此等種類的加工延遲往往常見於習知排程器而降低該加工工具的產能。此外，於諸如時間點520的情況下，一晶圓留在製程腔室太久時間可能導致該晶圓被損壞及報廢的結果。
圖6展示根據本揭露的態樣產生的一晶圓加工計畫如何有助於增加產能。於時間安排示意圖600中，該晶圓加工計畫係被配置成俾使得該晶圓被轉移至所需的製程模組僅延遲一些或無延遲，而無習知基於串接的排程器導致的該等延遲(510、520、530)。
圖7展示根據本揭露的實施例如何能夠提供一更進一步的時間安排示意圖600的產能改善。於圖7，該晶圓加工計畫被配置成俾使得假使於WHC與PM1之間的該晶圓交換時間(730)係少於該晶圓於PM2中的製程時間(720)，該晶圓於PM2中的加工係延遲直到該PM1交換時間 與該PM2製程時間的差異係大約相等的被分配於該第一製程模組中該晶圓交換的之前(740)與之後(750)。除此之外，此方式有助於大大地減少PM1反應器閒置時間(720)。
上文顯示及描述之該特定施行方式係說明該些範例性實施例及其最好的形式，且並非想要以任何的方式限至本揭露的範圍。實際上，為求簡潔，習知的資料儲存、資料傳輸以及其他該系統的功能性態樣並沒有被詳細的描述。於各個圖式展示的方法可能包含更多、更少、或其他的步驟。再者，各步驟可依適當的方式執行而不脫離本揭露之範圍。此外，於各圖中顯示之連接線係欲意表示範例性的功能關係及/或各元件間的實體耦合。許多替代性或額外的功能性關係或實體連接係可能出現於實際系統中。
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270‧‧‧步驟

Claims (39)

  1. 一種方法，其包括：藉由於一電腦系統上操作的一電腦程式，分析用以完成被一半導體加工工具執行的個別複數個動作之每一者的複數個預期時間，該半導體加工工具包含一第一製程模組與一第二製程模組；基於該分析藉由該電腦程式產生一晶圓加工計畫，其中當該晶圓加工計畫被該半導體加工工具運行時，該晶圓加工計畫導致該半導體加工工具用以：裝載一第一晶圓進入該第一製程模組；於裝載該第一晶圓進入該第一製程模組之後，自該第二製程模組卸載一第二晶圓；於自該第二製程模組卸載該第二晶圓之後，裝載一第三晶圓進入該第一製程模組；以及，於裝載該第三晶圓進入該第一製程模組之後，自該第一製程模組卸載該第一晶圓。
  2. 根據申請專利範圍第1項之方法，其中該半導體加工工具包含連接該第一製程模組與該第二製程模組之一晶圓處理腔室，且其中藉由該半導體加工工具之該晶圓加工計畫的運行導致自該第一製程模組卸載該第一晶圓之前的該晶圓處理腔室的閒置時間係大約相等於於裝載該第三晶圓進入該第一製程模組之後的該晶圓處理腔室的閒置時間。
  3. 根據申請專利範圍第1或第2項之方法，其中該複數個預期時間之至少一者係完成一動作所需要之時間之一估計值。
  4. 根據申請專利範圍第1或第2項之方法，其中該複數個預期時間之至少一者係完成一動作所需要之時間之一量測時間。
  5. 根據申請專利範圍第1或第2項之方法，其中該複數個預期時間包含自該複數個動作中執行一動作所需要的一第一預期時間，該方法進一步包括：量測該半導體加工工具執行該動作的一實際時間；比較該實際時間與該第一預期時間；以及響應於該量測時間與該第一預期時間之間的差異超過一預先決定的量，於後續晶圓製程計畫的該複數個預期時間中以該量測時間取代該第一預期時間。
  6. 根據申請專利範圍第1或第2項之方法，其中該複數個預期時間包含自該複數個動作中完成一動作所需要的一第一預期時間，該方法進一步包括：量測該半導體加工工具執行該動作的一實際時間；比較該實際時間與該第一預期時間；以及響應於該量測時間與該第一預期時間之間的差異超過一預先決定的量，產生一警報，其係經由一使用者介面耦合至該電腦系統。
  7. 根據申請專利範圍第6項之方法，其中該警報標示該半導體加工工具的一部件，其可能正在故障而導致該量測時間與該第一預期時間之間的差異。
  8. 根據申請專利範圍第1或第2項之方法，進一步包括：基於個別複數個動作之第一複數個預期時間產生一第一晶圓加工計 畫；於該第一晶圓加工計畫量測一半導體加工工具執行複數個動作的多個實際時間；藉由基於該第一晶圓加工計畫的該些量測時間自該第一複數個預期時間修改至少一時間以產生一第二複數個時間；以及基於該第二複數個時間產生一第二晶圓加工計畫。
  9. 根據申請專利範圍第8項之方法，進一步包括：於該第二晶圓加工計畫量測該半導體加工工具執行該複數個動作的多個實際時間；藉由基於該第二晶圓加工計畫的該些量測時間自該第二複數個預期時間修改至少一時間以產生一第三複數個時間；以及基於該第三複數個時間產生一第三晶圓加工計畫。
  10. 根據申請專利範圍第1或第2項之方法，其中該半導體加工工具包含連接該第一製程模組與該第二製程模組之一晶圓處理腔室，該晶圓處理腔室包含一機器人用以將晶圓轉移至或轉移自該第一製程模組與該第二製程模組，其中分析該等複數個預期時間包含當該機器人係於一第一定位時標示一第一預期時間，以及當該機器人係於一第二定位時標示一第二預期時間，該第一預期時間係短於該第二預期時間。
  11. 根據申請專利範圍第1或第2項之方法，其中分析該複數個預期時間包含分析關聯於在該第一製程模組與該第二製程模組之一或更多者中處理一晶圓的多個預期時間之總和。
  12. 根據申請專利範圍第1項之方法，其中該半導體加工工具包含連接 該第一製程模組與該第二製程模組之一晶圓處理腔室，且其中分析該複數個預期時間包含分析以下預期時間之一或更多者：用以自該晶圓處理腔室轉移一晶圓至該第一製程模組的預期時間；用以自該第一製程模組轉移一晶圓至該晶圓處理腔室的預期時間；用以自該晶圓處理腔室轉移一晶圓至該第二製程模組的預期時間；以及，用以自該第二製程模組轉移一晶圓至該晶圓處理腔室的預期時間。
  13. 根據申請專利範圍第1項之方法，其中該半導體加工工具包含連接該第一製程模組與該第二製程模組之一晶圓處理腔室，連接該晶圓處理腔室之一裝載固鎖，以及連接該裝載固鎖之一裝載埠，且其中分析該複數個預期時間包含分析以下預期時間之一或更多者：用以自該裝載埠轉移一晶圓至該裝載固鎖的預期時間；用以自該裝載固鎖轉移一晶圓至該晶圓處理腔室的預期時間；用以自該晶圓處理腔室轉移一晶圓至該裝載固鎖的預期時間；以及，用以自該裝載固鎖轉移一晶圓至該裝載埠的預期時間。
  14. 根據申請專利範圍第13項之方法，其中分析該複數個預期時間包含判定該裝載固鎖是否閒置。
  15. 根據申請專利範圍第13項之方法，其中分析該複數個預期時間包含判定該晶圓處理腔室是否閒置。
  16. 根據申請專利範圍第1項之方法，其中分析該複數個預期時間包含判定該第一製程模組與該第二製程模組之一或更多者是否閒置。
  17. 根據申請專利範圍第1或第2項之方法，其中分析該複數個預期時 間包含比較一第一製程配方與一第二製程配方用以接續地被執行。
  18. 根據申請專利範圍第1或第2項之方法，其中分析該複數個預期時間包含標示自該第一製程腔室與該第二製程腔室之一或更多者泵入氣體之一預期時間。
  19. 根據申請專利範圍第1或第2項之方法，其中分析該複數個預期時間包含標示增加或減少該第一製程腔室與該第二製程腔室之一或更多者知至少一部分的溫度之一預期時間。
  20. 根據申請專利範圍第1項之方法，其中該電腦程式包含一信號，其不管該晶圓加工計畫，而防止該半導體加工工具企圖執行一第一動作直到一第二動作已被完成，其中該第一動作與第二動作不能同時被執行。
  21. 一種系統，其包括：一處理器；以及一耦合至該處理器的記憶體，該記憶體儲存指令，該些指令響應該處理器之運行，導致該處理器執行操作，該些操作包含：分析用以完成被一半導體加工工具執行的個別複數個動作之每一者的複數個預期時間；基於該分析藉由該電腦程式產生一晶圓加工計畫，其中當該晶圓加工計畫被該半導體加工工具運行時，該晶圓加工計畫被配置成導致該半導體加工工具用以：裝載一第一晶圓進入該第一製程模組；於裝載該第一晶圓進入該第一製程模組之後，自該第二製程模組卸載一第二晶圓； 於自該第二製程模組卸載該第二晶圓之後，裝載一第三晶圓進入該第一製程模組；以及，於裝載該第三晶圓進入該第一製程模組之後，自該第一製程模組卸載該第一晶圓。
  22. 根據申請專利範圍第21項之系統，其中該半導體加工工具包含連接該第一製程模組與該第二製程模組之一晶圓處理腔室，且其中藉由該半導體加工工具之該晶圓加工計畫的運行導致自該第一製程模組卸載該第一晶圓之前的該晶圓處理腔室的閒置時間係大約相等於於裝載該第三晶圓進入該第一製程模組之後的該晶圓處理腔室的閒置時間。
  23. 根據申請專利範圍第21或第22項之系統，其中該複數個預期時間之至少一者係完成一動作所需要之時間之一估計值。
  24. 根據申請專利範圍第21或第22項之系統，其中該複數個預期時間之至少一者係完成一動作所需要之時間之一量測時間。
  25. 根據申請專利範圍第21或第22項之系統，其中該複數個預期時間包含自該複數個動作中執行一動作所需要的一第一預期時間，且其中該記憶體進一步儲存指令以導致該處理器執行操作，該些操作包括：量測該半導體加工工具執行該動作的一實際時間；比較該實際時間與該第一預期時間；以及響應於該量測時間與該第一預期時間之間的差異超過一預先決定的量，於後續晶圓製程計畫的該複數個預期時間中以該量測時間取代該第一預期時間。
  26. 根據申請專利範圍第21或第22項之系統，其中該複數個預期時間 包含自該複數個動作中執行一動作所需要的一第一預期時間，且其中該記憶體進一步儲存指令以導致該處理器執行操作，該些操作包括：量測該半導體加工工具執行該動作的一實際時間；比較該實際時間與該第一預期時間；以及響應於該量測時間與該第一預期時間之間的差異超過一預先決定的量，產生一警報，其係經由一使用者介面耦合至該電腦系統。
  27. 根據申請專利範圍第26項之系統，其中該警報標示該半導體加工工具的一部件，其可能正在故障而導致該量測時間與該第一預期時間之間的差異。
  28. 根據申請專利範圍第21或第22項之系統，其中該記憶體進一步儲存指令以導致該處理器執行操作，該些操作包括：基於個別複數個動作之第一複數個預期時間產生一第一晶圓加工計畫；於該第一晶圓加工計畫量測一半導體加工工具執行複數個動作的多個實際時間；藉由基於該第一晶圓加工計畫的該些量測時間自該第一複數個預期時間修改至少一時間以產生一第二複數個時間；以及基於該第二複數個時間產生一第二晶圓加工計畫。
  29. 根據申請專利範圍第28項之系統，其中該記憶體進一步儲存指令以導致該處理器執行操作，該些操作包括：於該第二晶圓加工計畫量測該半導體加工工具執行該複數個動作的多個實際時間； 藉由基於該第二晶圓加工計畫的該些量測時間自該第二複數個預期時間修改至少一時間以產生一第三複數個時間；以及基於該第三複數個時間產生一第三晶圓加工計畫。
  30. 根據申請專利範圍第21或第22項之系統，其中該半導體加工工具包含連接該第一製程模組與該第二製程模組之一晶圓處理腔室，該晶圓處理腔室包含一機器人用以將晶圓轉移至或轉移自該第一製程模組與該第二製程模組，其中分析該等複數個預期時間包含當該機器人係於一第一定位時標示一第一預期時間，以及當該機器人係於一第二定位時標示一第二預期時間，該第一預期時間係短於該第二預期時間。
  31. 根據申請專利範圍第21項之系統，其中分析該複數個預期時間包含分析關聯於在該第一製程模組與該第二製程模組之一或更多者中處理一晶圓的多個預期時間之總和。
  32. 根據申請專利範圍第21項之系統，其中該半導體加工工具包含連接該第一製程模組與該第二製程模組之一晶圓處理腔室，且其中分析該複數個預期時間包含分析以下預期時間之一或更多者：用以自該晶圓處理腔室轉移一晶圓至該第一製程模組的預期時間；用以自該第一製程模組轉移一晶圓至該晶圓處理腔室的預期時間；用以自該晶圓處理腔室轉移一晶圓至該第二製程模組的預期時間；以及，用以自該第二製程模組轉移一晶圓至該晶圓處理腔室的預期時間。
  33. 根據申請專利範圍第21項之系統，其中該半導體加工工具包含連接該第一製程模組與該第二製程模組之一晶圓處理腔室，連接該晶圓處理腔 室之一裝載固鎖，以及連接該裝載固鎖之一裝載埠，且其中分析該複數個預期時間包含分析以下預期時間之一或更多者：用以自該裝載埠轉移一晶圓至該裝載固鎖的預期時間；用以自該裝載固鎖轉移一晶圓至該晶圓處理腔室的預期時間；用以自該晶圓處理腔室轉移一晶圓至該裝載固鎖的預期時間；以及，用以自該裝載固鎖轉移一晶圓至該裝載埠的預期時間。
  34. 根據申請專利範圍第33項之系統，其中分析該複數個預期時間包含判定該裝載固鎖是否閒置。
  35. 根據申請專利範圍第33項之系統，其中分析該複數個預期時間包含判定該晶圓處理腔室是否閒置。
  36. 根據申請專利範圍第21或22項之系統，其中分析該複數個預期時間包含判定該第一製程模組與該第二製程模組之一或更多者是否閒置。
  37. 根據申請專利範圍第21或22項之系統，其中分析該複數個預期時間包含比較一第一製程配方與一第二製程配方用以接續地被執行。
  38. 根據申請專利範圍第21或22項之系統，其中分析該複數個預期時間包含標示自該第一製程腔室與該第二製程腔室之一或更多者泵入氣體之一預期時間。
  39. 根據申請專利範圍第21或第22項之系統，其中分析該複數個預期時間包含標示增加或減少該第一製程腔室與該第二製程腔室之一或更多者知至少一部分的溫度之一預期時間。
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