KR20190035700A - 갭을 충진하기 위한 방법 및 장치 - Google Patents
갭을 충진하기 위한 방법 및 장치 Download PDFInfo
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- KR20190035700A KR20190035700A KR1020197002156A KR20197002156A KR20190035700A KR 20190035700 A KR20190035700 A KR 20190035700A KR 1020197002156 A KR1020197002156 A KR 1020197002156A KR 20197002156 A KR20197002156 A KR 20197002156A KR 20190035700 A KR20190035700 A KR 20190035700A
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Abstract
본 발명에 따라 반응 챔버에 기판을 제공하고 증착 방법을 제공함으로써, 기판 상에 피처를 제조하는 중에 생성된 하나 이상의 갭을 충진하기 위한 방법이 제공된다. 증착 방법은, 이방성 플라즈마를 제공하여 하나 이상의 갭 표면의 하부 영역을 이온으로 충돌시킴으로써 하부 영역에 흡착 부위를 생성하는 단계; 제1 반응물을 기판에 도입하는 단계; 및 제1 반응물을 표면의 하부 영역에서 흡착 부위와 반응시켜 하부 영역으로부터 상향으로 하나 이상의 갭을 충진하는 단계를 포함한다.
Description
본 발명은 일반적으로 전자 소자 제조용 방법 및 장치에 관한 것이다.
보다 구체적으로 본 발명은 반응 챔버 내에 기판을 제공하고 증착 방법을 제공함으로써, 상기 기판 상에 피처를 제조하는 중에 생성된 하나 이상의 갭을 충진하기 위한 방법 및 장치에 관한 것으로,
상기 증착 방법은
제1 반응물을 상기 기판에 도입하는 단계; 및
상기 제1 반응물을 표면의 하부 영역에서 반응시켜 상기 하나 이상의 갭을 충진하는 단계를 포함한다.
기판 상에 집적 회로를 제조하는 중에, 갭(gap) 예를 들어 트렌치(trench)가 기판 위에 생성될 수 있다. 트렌치 재충진은 특정 응용에 따라 다양한 형태를 취할 수 있다.
기본적인 트렌치 충진 공정은 트렌치 재충진 중에 공동(void) 형성을 포함한 결점을 가진다. 공동은 완전히 충진되기 전에 형성될 수 있으며, 이 때에 재충진 물질은 트렌치의 상부 근처에 수축부(constriction)를 형성한다. 이러한 공동은 집적 회로(IC)상의 장치의 소자 분리(device isolation)뿐만 아니라 IC의 전반적인 구조적 무결성을 손상시킬 수 있다. 트렌치 충진 중에 공동 형성을 방지하는 것은 불행히도 트렌치 자체에 종종 최소 크기 제약을 둘 수 있으며, 이는 장치의 소자 패킹 밀도를 제한할 수 있다.
트렌치가 소자 분리를 위해 충진되는 경우, 소자 분리의 유효성을 측정하는 핵심 매개 변수는 필드 임계 전압(field threshold voltage) 즉, 인접한 분리 소자를 연결하는 기생 전류(parasitic current)를 생성하는 데 필요한 전압일 수 있다. 필드 임계 전압은 트렌치 폭, 트렌치 충진 물질의 유전 상수, 기판 도핑, 필드 임플란트 도즈(field implant dose), 및 기판 바이어스와 같은 다수의 물리적 및 물질 특성에 의해 영향을 받을 수 있다.
공동 형성은 트렌치 깊이를 감소시키고/시키거나, 트렌치 측벽을 점점 가늘게 함으로써 완화될 수 있어서, 개구부는 하부보다 상부에서 더 넓을 수 있다. 트렌치 깊이를 줄이는 트레이드 오프는 소자 분리의 효과성을 감소시킬 수 있는 반면에, 점점 가늘게 한 측벽을 갖는 트렌치의 더 큰 상부 개구부도 집적 회로 면적을 추가적으로 소모한다.
본 발명의 목적은, 예를 들어 개선되거나 적어도 대안적인 갭 충진 방법을 제공하는 것이다.
따라서 증착 방법을 제공함으로써, 기판 상에 피처를 제조하는 중에 생성된 하나 이상의 갭을 충진하기 위한 방법이 제공되며, 상기 증착 방법은
이방성 플라즈마(anisotropic plasma)를 제공하여 상기 하나 이상의 갭 표면의 하부를 이온으로 충돌시킴으로써 상기 하부에 흡착 부위를 생성하는 단계;
제1 반응물을 상기 기판에 도입하는 단계; 및
상기 제1 반응물을 상기 표면의 하부에 생성된 상기 흡착 부위와 반응시켜 상기 하부 영역으로부터 상향으로 상기 하나 이상의 갭을 충진하는 단계를 포함한다.
이방성 플라즈마는 하나 이상의 갭 표면의 하부를 이온으로 충돌함으로써 하부에 흡착 부위를 생성할 것이다. 상기 제1 반응물은 상기 반응 챔버 내의 기판에 도입되어 상기 표면의 하부에서 상기 흡착 부위와 반응되어 상기 하부로부터 상향으로 상기 하나 이상의 갭을 충진할 것이다.
또 다른 구현예에 따라, 개선되거나 적어도 대안적인 갭 충진 방법을 제공하는 반도체 처리 장치가 제공된다. 장치는,
기판 상에 피처를 제조하는 중에 생성된 갭을 갖는 상기 기판을 수용하기 위한 하나 이상의 반응 챔버;
상기 반응 챔버 중 하나와 플라즈마 가스 밸브를 통해 가스 연통하는 플라즈마 가스용 플라즈마 가스 공급원;
상기 하나 이상의 갭 표면의 하부를 이온으로 충돌시킴으로써 상기 하부에 흡착 부위를 생성하기 위하여 상기 플라즈마 가스의 이방성 플라즈마를 생성하도록 배열되고 구성되는 rf(radio frequency) 전력 공급원;
상기 반응 챔버 중 하나와 제1 밸브를 통해 가스 연통하는 제1 반응물용 제1 공급원; 및
상기 플라즈마, 상기 제1 가스 밸브, 및 상기 rf 전력 공급원과 작동 가능하게 연결되는 제어기를 포함하고, 상기 제어기는
상기 플라즈마 가스 밸브를 통한 플라즈마 가스, 상기 플라즈마 가스 공급원을 사용하기 위한 rf 공급원, 및 상기 하나 이상의 갭 표면의 하부를 이온으로 충돌시킴으로써 상기 하부에 흡착 부위를 생성하는 이방성 플라즈마를 생성하기 위한 rf 전력 공급원의 시간과 양; 및
상기 하부에 생성된 상기 흡착 부위와 반응하도록 상기 갭 표면의 하부에 상기 제1 반응물을 증착하기 위한 상기 제1 반응물의 시간과 양을 제어하도록 구성되고 프로그래밍된다.
본 발명 및 선행 기술에 대하여 달성되는 장점들을 요약하기 위한 목적으로, 본 발명의 특정 목적 및 장점들이 본원에 기술되었다. 물론, 모든 목적 및 장점들이 본 발명의 임의의 특별한 구현예에 따라 반드시 달성되는 것이 아니라는 것을 이해하여야 한다.
따라서, 예들 들어 당업자는, 본 발명이, 본원에 교시 또는 제안될 수 있는 다른 목적들 또는 장점들을 반드시 달성하지 않고서, 본원에 교시되거나 제시된 바와 같은 하나의 장점 또는 여러 장점들을 달성 또는 최적화 하는 방식으로 구현되거나 수행될 수 있다는 것을 인식할 것이다.
이들 구현예 모두 본원에 개시된 본 발명의 범주 내에 있도록 의도된다. 이들 및 다른 구현예들은 첨부된 도면들을 참조하는 특정 구현예들의 다음의 상세한 설명으로부터 당업자에게 쉽게 분명하게 될 것이고, 본 발명은 개시된 임의의 특정 구현예(들)에 한정되지 않는다.
본원에 개시된 발명의 이러한 그리고 기타 특징, 양태 및 장점은 특정 구현예의 도면을 참조하여 아래에 설명될 것이고, 이는 본 발명을 도시하고, 본 발명을 한정하기 위함은 아니다.
도 1a는 본 발명의 일 구현예에 사용할 수 있는 갭을 충진하기 위한 PEALD(플라즈마 강화 원자층 증착) 장치의 개략적인 표시이다.
도 1b는 본 발명의 구현예에 사용할 수 있는 유동-통과 시스템(flow-pass system, FPS)을 이용한 전구체 공급 시스템의 개략적인 표시를 도시한다.
도 2는 제1 구현예에 따라 갭을 충진하는 방법의 흐름도이다.
도 1a는 본 발명의 일 구현예에 사용할 수 있는 갭을 충진하기 위한 PEALD(플라즈마 강화 원자층 증착) 장치의 개략적인 표시이다.
도 1b는 본 발명의 구현예에 사용할 수 있는 유동-통과 시스템(flow-pass system, FPS)을 이용한 전구체 공급 시스템의 개략적인 표시를 도시한다.
도 2는 제1 구현예에 따라 갭을 충진하는 방법의 흐름도이다.
특정 구현예 및 실시예가 아래에 개시되었지만, 당업자는 본 발명이 구체적으로 개시된 구현예 및/또는 본 발명의 용도 및 이들의 명백한 변형 및 등가물 너머로 연장된다는 것을 이해할 것이다. 따라서, 개시된 발명의 범주는 후술되는 구체적인 개시된 구현예에 의해 제한되지 않도록 의도된다.
도 2는 기판 상에 피처를 제조하는 중에 생성된 하나 이상의 갭이 증착 방법(100)에 의해 충진될 수 있는 본 발명의 적어도 하나의 구현예에 따른 방법의 흐름도이다. 갭은 40 또는 심지어 20 nm 폭 미만일 수 있다. 갭은 40, 100, 200, 또는 400 nm 깊이 초과일 수 있다.
증착 방법은 제1 단계(110)에서 이방성 플라즈마(anisotropic plasma)를 제공하여 상기 하나 이상의 갭 표면의 하부를 이온으로 충돌시킴으로써 상기 하부에 흡착 부위를 생성하는 단계를 포함할 수 있다. 상기 하나 이상의 갭 표면의 하부는 하부 자체를 포함하는 갭의 전체 높이의 10 % 더 낮은 것으로서 정의될 수 있다. 증착 방법은 제1 단계(110)에서 이방성 플라즈마(anisotropic plasma)를 제공하여 상기 하나 이상의 갭 표면의 측벽에 비해 하부를 이온으로 충돌시킴으로써 상기 측벽보다는 상기 하부에 흡착 부위가 더 많거나 실질적으로 상기 측벽에 흡착 부위가 없도록 생성하는 단계를 포함할 수 있다. 이방성 플라즈마는 헬륨 또는 아르곤 플라즈마와 같은 희귀가스 플라즈마를 포함할 수 있어서 하나 이상의 갭 표면의 하부를 충돌시켜 노출 표면 상에 절단 결합(dangling bond)을 생성한다.
이방성 플라즈마는 예를 들어 도 1a에 도시된 장치를 사용하여 생성될 수 있다. 도 1a는 본 발명의 일부 구현예에 사용될 수 있고 바람직하게는 본원에 기술된 시퀀스를 수행하기 위해 프로그램된 제어기와 연결된 PEALD 장치의 개략도이다. 서로 마주하며 평행한 한 쌍의 전기 전도성 평판 전극(4, 2)을 반응 챔버(3)의 내부(반응 구역)(11)에 공급하고, HRF 전력(13.56 MHz 또는 27 MHz)(20)을 일측에 인가하고 타측(12)을 전기적으로 접지시킴으로써, 플라즈마가 전극들 사이에서 여기된다.
온도 조절기가 하부 스테이지(하부 전극)(2)에 제공되고, 그 위에 놓인 기판(1)의 온도는 주어진 온도로 일정하게 유지된다. 상부 전극(4)은 샤워 플레이트로서 역할도 하고, 플라즈마 가스(예, 아르고 또는 헬륨과 같은 희귀 가스)는 반응 챔버(3)로 가스 라인(21)과 샤워 플레이트(4)를 통해 도입되어 플라즈마를 생성한다.
반응 챔버(3)에는 배기 라인(7)을 갖는 원형 덕트(13)가 제공될 수 있고, 이를 통해 반응 챔버(3)의 내부(11)에 있는 가스가 배기될 수 있다. 반응 챔버(3) 아래에 배치된 이송 챔버(5)는, 이송 챔버(5)의 내부(이송 구역)(16)를 통해 반응 챔버(3)의 내부(11)로 씰 가스를 유입하기 위한 씰 가스 라인(24)을 구비할 수 있으며, 반응 구역과 이송 구역을 분리하기 위한 분리 판(14)이 제공된다(웨이퍼가 이송 챔버(5)로 또는 이송 챔버로부터 이송되는 게이트 밸브는 본 도면에서 생략됨). 이송 챔버는 또한 배기 라인(6)을 구비한다.
일부 구현예에서, 이방성 에칭, 막의 증착 및 표면 처리는 동일한 반응 공간에서 수행될 수 있어서, 모든 단계들이 기판을 공기 또는 다른 산소-함유 대기에 노출시키지 않고 연속적으로 수행될 수 있다. 일부 구현예에서, 가스를 여기시키기 위한 리모트 플라즈마 유닛이 사용될 수 있다.
일부 구현예에서, 기판은 다수의 반응 챔버에 대해 이동 가능할 수 있어서, 일부 처리 단계는 개별적인 반응 챔버에서 수행될 수 있다.
당업자는 프로그램된, 그렇지 않으면 본원의 다른 곳에서 설명되는 반응기 세정 공정이 수행되도록 구성된, 하나 이상의 제어기(들)(미도시)가 장치에 포함될 수 있음을 이해할 것이다. 제어기(들)는, 당업자가 이해하는 바와 같이, 다양한 전력원, 가열 시스템, 펌프, 로보틱스, 및 반응기의 가스 흐름 제어기 또는 밸브들과 통신한다.
도 2를 참조하여 제2 단계(120)에서 제1 반응물이 기판에 제공될 수 있다. 제1 반응물은 유기실리콘(organosilicon) 화합물 예를 들어, 테트라유기실란(tetraorganosilane)을 포함할 수 있다. 유기실리콘 화합물은 메틸 말단기(methyl end group)를 가질 수 있다. 유기실리콘 화합물은 측벽 위에 덜 증착되는 테트라메틸실란(tetramethylsilane)을 가질 수 있다. 유기실리콘 화합물은 탄소로 종결된 실리콘 전구체(carbon terminated silicon precursor)를 포함할 수 있다. 유기실리콘 화합물은 질소를 포함할 수 있다. 제1 유기실리콘은 실란올(silanol), 실록산(siloxane), 또는 실란 알콕시드(silane alkoxide)일 수 있다. 제1 반응물은 SiN 증착용 실라잔(silazane)일 수 있다. 제1 반응물은 라인(22), 샤워 플레이트(4)를 통해 반응 챔버(3)에 제공될 수 있다(도 1 참조).
도 2의 단계(120)에서, 스퍼터링 플라즈마가 표면의 상부 영역에 스퍼터링을 생성하도록 선택 사항으로 생성될 수 있고, 이에 의해 상부 영역으로부터의 물질이 갭의 하부에 재배치될 수 있다. 스퍼터링 플라즈마는 산소, 수소, 질소, 헬륨 또는 아르곤 플라즈마 또는 이들의 혼합물을 포함할 수 있다. 증착막의 조성과 품질은 플라즈마 조건에 의해 제어될 수 있고, 예를 들어 SiO 증착은 산소 플라즈마를 사용함으로써 제어될 수 있거나, SiN 증착은 질소/산소 혼합물을 사용하여 제어될 수 있다.
스퍼터링 효과를 향상시키기 위해서 제1 반응물은 큰 사이즈를 가질 수 있고, 약하게 화학 흡착될 수 있다. 스퍼터링 플라즈마는 산소, 수소, 질소, 헬륨, 또는 아르곤 플라즈마 또는 이들의 임의의 혼합물을 예를 들어 도 1의 라인(21), 샤워 플레이트(4)를 통해 반응 챔버(3) 안으로 제공하는 것에 의해 생성될 수 있다.
과잉의 반응물 및 부산물은 제1 및/또는 제2 단계(110, 120) 이후에 제거될 수 있어서 장치 내 다른 곳에서 일어나는 반응을 방지한다. 증착 방법은 하부에서 상부로 갭을 충진하기 위해 여러 사이클을 반복할 수 있어서, 재충진 물질이 완전히 충진되기 전에 갭의 상부 근처에 수축부를 형성하지 않는다.
본원에 기술된 구성 및/또는 접근법은 본질적으로 예시적인 것이며, 다양한 변형이 가능하기 때문에, 이들 특정 구현예 또는 실시예가 제한적인 의미로 고려되어서는 안 된다는 것을 이해해야 한다. 본원에 설명된 특정 루틴 또는 방법은 임의의 수의 처리 전략 중 하나 이상을 나타낼 수 있다. 따라서, 도시된 다양한 동작은 도시된 시퀀스에서, 상이한 시퀀스에서 수행되거나, 경우에 따라 생략될 수 있다.
본 개시의 요지는 본원에 개시된 다양한 공정, 시스템, 및 구성, 다른 특징, 기능, 행위 및/또는 성질의, 모든, 신규하고 비자명한 조합 및 하위 조합뿐만 아니라 임의의 그리고 모든 이들의 등가물들을 포함한다.
Claims (21)
- 증착 방법을 제공함으로써 기판 상에 피처를 제조하는 중에 생성된 하나 이상의 갭을 충진하기 위한 방법으로서, 상기 증착 방법은
이방성 플라즈마를 제공하여 상기 하나 이상의 갭 표면의 하부 영역을 이온으로 충돌시킴으로써 상기 하부 영역에 흡착 부위를 생성하는 단계
제1 반응물을 상기 기판에 도입하는 단계; 및
상기 제1 반응물을 상기 표면의 하부 영역에 생성된 상기 흡착 부위와 반응시켜 상기 하부 영역으로부터 상향으로 상기 하나 이상의 갭을 충진하는 단계를 포함하는 방법. - 제1항에 있어서, 상기 방법은 상기 이방성 플라즈마를 제공하고/하거나 상기 제1 반응물을 도입하는 단계 이후에 상기 반응 챔버로부터 과잉의 반응물 및 부산물을 제거하는 단계를 포함하는 방법.
- 제1항에 있어서, 상기 이방성 플라즈마는 희귀 가스 플라즈마를 포함하는 방법.
- 제3항에 있어서, 상기 희귀 가스 플라즈마는 헬륨 플라즈마를 포함하는 방법.
- 제3항에 있어서, 상기 희귀 가스 플라즈마는 아르곤 플라즈마를 포함하는 방법.
- 제1항에 있어서, 상기 제1 반응물을 도입하는 단계 중에 스퍼터링 플라즈마가 생성되어 상기 표면의 상부 영역에서 스퍼터링을 생성하는 방법.
- 제6항에 있어서, 상기 스퍼터링 플라즈마는 수소 플라즈마를 포함하는 방법.
- 제6항에 있어서, 상기 스퍼터링 플라즈마는 질소 플라즈마를 포함하는 방법.
- 제6항에 있어서, 상기 스퍼터링 플라즈마는 산소 플라즈마를 포함하는 방법.
- 제6항에 있어서, 상기 스퍼터링 플라즈마는 아르곤 플라즈마를 포함하는 방법.
- 제1항에 있어서, 상기 제1 반응물은 유기실리콘 화합물을 포함하는 방법.
- 제11항에 있어서, 상기 유기실리콘 화합물은 테트라유기실란을 포함하는 방법.
- 제11항에 있어서, 상기 유기실리콘 화합물은 메틸 말단기를 포함하는 방법.
- 제11항에 있어서, 상기 유기실리콘 화합물은 테트라메틸실란을 포함하는 방법.
- 제11항에 있어서, 상기 유기실리콘 화합물은 탄소로 종결된 실리콘 전구체를 포함하는 방법.
- 제11항에 있어서, 상기 유기실리콘 화합물은 질소를 포함하는 방법.
- 제11항에 있어서, 상기 제1 반응물은 실란올을 포함하는 방법.
- 제11항에 있어서, 상기 제1 반응물은 실록산을 포함하는 방법.
- 제11항에 있어서, 상기 제1 반응물은 실란 알콕시드를 포함하는 방법.
- 제11항에 있어서, 상기 제1 반응물은 실라잔을 포함하는 방법.
- 반도체 처리 장치로서,
기판 상에 피처를 제조하는 중에 생성된 갭을 갖는 상기 기판을 수용하기 위한 하나 이상의 반응 챔버;
상기 반응 챔버 중 하나와 플라즈마 가스 밸브를 통해 가스 연통하는 플라즈마 가스용 플라즈마 가스 공급원;
상기 하나 이상의 갭 표면의 하부를 이온으로 충돌시킴으로써 상기 하부에 흡착 부위를 생성하기 위하여 상기 플라즈마 가스의 이방성 플라즈마를 생성하도록 배열되고 구성되는 rf 전력 공급원;
상기 반응 챔버 중 하나와 제1 밸브를 통해 가스 연통하는 제1 반응물용 제1 공급원; 및
상기 플라즈마, 상기 제1 가스 밸브, 및 상기 rf 전력 공급원과 작동 가능하게 연결되는 제어기를 포함하고, 상기 제어기는
상기 플라즈마 가스 밸브를 통한 플라즈마 가스, 상기 플라즈마 가스 공급원을 사용하기 위한 rf 공급원, 및 상기 하나 이상의 갭 표면의 하부를 이온으로 충돌시킴으로써 상기 하부에 흡착 부위를 생성하는 이방성 플라즈마를 생성하기 위한 rf 전력 공급원의 시간과 양; 및
상기 하부에 생성된 상기 흡착 부위와 반응하도록 상기 갭 표면의 하부에 상기 제1 반응물을 증착하기 위한 상기 제1 반응물의 시간과 양을 제어하도록 구성되고 프로그래밍되는 장치.
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CN109477212A (zh) | 2019-03-15 |
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US10395919B2 (en) | 2019-08-27 |
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