CN109872947A - 形成用于进行间隔物界定图案化的竖直间隔物的方法 - Google Patents
形成用于进行间隔物界定图案化的竖直间隔物的方法 Download PDFInfo
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- CN109872947A CN109872947A CN201811473050.6A CN201811473050A CN109872947A CN 109872947 A CN109872947 A CN 109872947A CN 201811473050 A CN201811473050 A CN 201811473050A CN 109872947 A CN109872947 A CN 109872947A
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Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
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- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
一种形成用于间隔物界定多重图案化的竖直间隔物的方法,其包括:在模板上沉积具有第一膜应力的第一共形图案转移膜,并且连续地沉积具有第二膜应力的第二共形图案转移膜;对所述模板中除芯材料和所述第一图案转移膜和所述第二图案转移膜的竖直部分以外的部分进行干式蚀刻以形成竖直间隔物;以及对所述芯材料进行干式蚀刻,从而在所述竖直间隔物之间形成空白空间,其中通过调整所述第一图案转移膜与所述第二图案转移膜之间的膜应力差异,调整所述间隔物的倾斜角度。
Description
技术领域
本发明大体上涉及一种形成用于在半导体制造工艺中进行间隔物界定图案化的竖直间隔物的方法。
背景技术
使用光刻技术的图案化工艺对半导体制造工艺至关重要。然而,光刻技术由于光刻中所用的激光波长受限而在图案小型化中面临困难。使用已知图案化技术实现图案小型化的一种方法是自对准双重图案化(Self Aligned Double Pattering,SADP)或间隔物界定双重图案化(Spacer-Defined Double Patterning,SDDP)。图4是根据比较实例的双重图案化(步骤(a)到(c)) 的示意性表示。在步骤(a)中,将心轴(光致抗蚀剂)101在下方层102上图案化为芯材料。在步骤(b)中,使膜103沉积以全部覆盖心轴101的暴露表面和下方表面102的暴露表面。在步骤(c)中,通过干式蚀刻,对膜103 和心轴101的水平部分进行蚀刻,以便形成间隔物104。通过使用上文工艺,由步骤(c)中间隔物104构成的图案所具有的间距可以是步骤(a)中光致抗蚀剂101图案的间距的一半,即,可以实现间距双倍密集的图案化。然而,在所述工艺中,如图4中所示,间隔物104(由膜103的侧壁部分形成)在芯剥离步骤(c)期间和之后朝向空白空间110倾斜。这种倾斜现象使得半导体制造商难以精确地连续进行后续整合工艺。预期上文倾斜问题将随着技术进步和小型化进展而变得更严重。
在图4中所示出的上文常规图案化中存在另一问题。即,由于间隔物104 由沉积于心轴101上的膜103形成,并且沉积在每一心轴101的顶部拐角处的膜103一定如步骤(b)中所示弯曲,故由膜103的顶部拐角部分形成的间隔物104的顶部部分111在步骤(c)中经历蚀刻时变得自然圆化。此外,在步骤(c)的回蚀(etch-back)工艺中,间隔物104的圆化轮廓变得更清晰并且显著,这是因为间隔物的顶部部分受到来自等离子体的离子轰击攻击(其中间隔物的外部部分比间隔物的内部部分更易受离子轰击影响),导致“肩部损失”。如果肩部损失显著,那么需要修剪间隔物的顶部部分,由此减小间隔物的高度。这种肩部损失现象使得半导体制造商难以精确地连续进行后续整合工艺。预期上文肩部损失问题将随着技术进步和小型化进展而变得更严重。
对与相关技术有关的问题和解决方案的任何论述都已经仅出于向本发明提供背景的目的而包括于本公开中,并且不应被视为承认所述论述中的任一项或全部在创作本发明时都是已知的。
发明内容
为了解决常规图案化中的至少一个问题,在本发明的一些实施例中,间隔物通过使用双层膜形成,由此控制蚀刻后间隔物的倾斜角度,尤其抑制或遏制间隔物向内倾斜,所述角度被定义为如相对于与空白空间的底部竖直的线所测量的,每一侧壁部分的内表面的角度,所述空白空间通过去除所述间隔物之间的芯材料来形成,其中倾斜角度为零表示完全竖直并且倾斜角度为正值表示向内倾斜。双层膜满足所述两个层具有不同膜应力并且两者高度共形的条件(优选地通过原子层沉积(atomic layer deposition,ALD)来形成)。通过改变两个层之间的膜应力差异,可以控制间隔物的倾斜角度达到所期望的程度并且在所期望的方向上(向内或向外)。即,通过将外层调整为压缩应力比内层更大(即,外层在负方向上的应力值比内层更大),间隔物的倾斜角度在正方向上变得更大,即,向内倾斜。另一方面,通过将内层调整为压缩应力比外层更大(即,内层在负方向上的应力值比外层更大),间隔物的倾斜角度在负方向上变得更大,即,向外倾斜。因而,通过适当地调整构成间隔物的内层与外层之间的膜应力差异,可以将间隔物的倾斜角度调整成目标值。
此外,在一些实施例中,双层膜满足两个层具有不同程度的抗干式蚀刻性的条件。通过改变两个层之间的干式蚀刻速率的差异,可以操纵间隔物的顶部轮廓。确切地说,通过将内层调整为抗干式蚀刻性比外层更小(干式蚀刻速率较高比外层更高),可以有效地防止肩部损失,并且间隔物的顶部在形成间隔物时可以变得基本上平坦。因此,可以省略使间隔物顶部平坦的进一步蚀刻,即,可以维持间隔物的有效高度,所述高度可以取决于目标结构、图案化方法等而变化。因此,当间隔物用作掩模时,可以加工较厚的下方层。此外,通过将另一种图案转移膜沉积在间隔物上,后接各向异性蚀刻,可以有效地执行自对准四重图案化(self-aligned quadruple patterning,SAQP)或间隔物界定四重图案化(spacer-defined quadruple patterning,SDQP)(间隔物在间隔物上)。通过这种方法,可以拓宽间隔物的应用。在SAQP或SDQP中,分割间隔物的间距执行两次,由此将分辨率增加到11nm半间距(half pitch, HP)。
出于概述本发明的方面和所实现的优于相关技术的优势的目的,本发明的某些目标和优势描述于本公开中。当然,应理解,未必所有此类目标或优势都可以根据本发明的任一特定实施例来实现。因此,举例来说,本领域的技术人员将认识到,本发明可以按实现或优化如本文所传授的一个优势或一组优势的方式实施或进行,而不必实现如本文中可能传授或表明的其它目标或优势。
本发明的其它方面、特征和优势将根据下文的实施方式而变得显而易见。
附图说明
现将参考优选实施例的图来描述本发明的这些和其它特征,所述优选实施例打算说明而非限制本发明。各图出于说明性目的而被大大简化并且未必按比例。
图1是可用于本发明一个实施例中的用于沉积保护膜的等离子体增强型原子层沉积(plasma-enhanced atomic layer deposition,PEALD)设备的示意性表示。
图2的流程图示出根据本发明一个实施例的制造竖直间隔物结构的步骤。
图3的流程图示出根据本发明另一个实施例的调整竖直间隔物结构的形状的步骤。
图4是根据比较实例的双重图案化(步骤(a)到(c))的示意性表示。
图5是根据本发明一个实施例的双重图案化(步骤(a)到(c))的示意性表示。
图6是根据本发明另一个实施例的双重图案化(步骤(a)到(c))的示意性表示。
图7是根据本发明一个实施例的在衬底上制造的间隔物的横截面视图的扫描透射电子显微镜(Scanning Transmission Electron Microscope,STEM)照片,标注所述照片以展示倾斜角度。
图8展示横截面视图的STEM照片,其中(a)和(b)展示具有沉积于抗蚀剂图案上的不同膜应力的氧化硅膜,并且(c)和(d)展示分别由(a) 和(b)中所示的膜形成的间隔物。
图9展示横截面视图的STEM照片,其中根据本发明的实施例,(a)和 (b)分别展示图8(c)和(d)中所示的间隔物,并且(c)展示由用于(a) 中所示间隔物的内部氧化硅层和用于(b)中所示间隔物的外部氧化硅层组成的沉积氧化硅膜,(d)展示由(c)中所示的膜形成的间隔物,(e)展示由用于(b)中所示间隔物的内部氧化硅层和用于(b)中所示间隔物的外部氧化硅层组成的沉积氧化硅膜,并且(f)展示由(e)中所示的膜形成的间隔物。
图10的图展示根据本发明实施例的倾斜角度与双层图案转移膜的外层与内层之间的膜应力差异之间的关系。
图11展示经过标注以展示“肩部损失”的横截面视图的STEM照片,其中 (a)展示根据比较实例的由单层膜形成的间隔物,并且(b)展示根据本发明一个实施例的由双层膜形成的间隔物。
图12示出形成具有平坦顶部的间隔物的机制,其中(a)示意性地示出用于形成所述间隔物的双层膜,并且(b)到(f)是展示根据本发明一个实施例的步骤的放大示意性局部视图。
图13展示横截面视图的STEM照片,其展示根据本发明一个实施例的在步骤(a)到(f)中由双层膜形成具有平坦顶部的间隔物的步骤。
图14是根据本发明一个实施例的使用间隔物界定双重图案化(SDDP) 进行图案转移和目标蚀刻(步骤(a)到(i))的示意性表示。
图15的流程图示出根据本发明另一个实施例的调整竖直间隔物结构的顶部轮廓的步骤。
图16示出根据本发明一个实施例的沉积具有不同膜应力的氧化硅膜的一个循环中的工艺序列。
图17示出根据本发明一个实施例的沉积具有不同膜应力的氮化硅膜的一个循环中的工艺序列。
图18的竖直间隔物示意性表示用于在所述间隔物由多个层构成时解释竖直间隔物的力学(层数是n)。
图19的竖直间隔物示意性表示用于在所述间隔物由两个层构成时解释竖直间隔物的力学。
具体实施方式
在本公开中,“气体”可以包括气化的固体和/或液体并且可以由单一气体或气体混合物构成。在本公开中,通过喷头引入到反应室中的工艺气体可以包含前体气体和添加剂气体、基本上由其组成或由其组成。前体气体和添加剂气体通常以混合气体形式或单独地引入到反应空间中。前体气体可以用运载气体,如稀有气体加以引入。添加剂气体可以包含反应气体和如稀有气体的稀释气体、基本上由其组成或由其组成。反应气体和稀释气体可以以混合气体形式或单独地引入到反应空间中。前体可以包含两种或更多种前体,并且反应气体可以包含两种或更多种反应气体。前体是化学吸附在衬底上并且通常含有构成介电膜基质主要结构的类金属或金属元素的气体,并且用于沉积的反应气体是当气体被激发时与化学吸附在衬底上的前体反应以将原子层或单层固定在衬底上的气体。“化学吸附”是指化学饱和吸附。不作为工艺气体的气体,即不穿过喷头而引入的气体,可以用于例如密封反应空间,所述气体包括密封气体,如稀有气体。在一些实施例中,“膜”是指在垂直于厚度方向的方向上连续延伸以覆盖整个目标或相关表面的基本上无针孔的层,或简单地指覆盖目标或相关表面的层。在一些实施例中,“层”是指在表面上形成的具有某一厚度的结构,或膜或非膜结构的同义词。膜或层可以由具有某些特征的离散单个膜或层构成或由多个膜或层构成,并且相邻膜或层之间的边界可以透明或可以不透明,并且可以基于物理、化学和/或任何其它特征、形成工艺或序列和/或相邻膜或层的功能或目的而建立。
此外,在本公开中,除非另外指明,否则冠词“一个”或“一种”是指某个种或包括多个种的某个属。在一些实施例中,术语“由……构成”和“具有”独立地指“通常或广泛地包含”、“包含”、“基本上由……组成”或“由……组成”。另外,在本公开中,在一些实施例中,任何所定义的含义未必排除普通和惯用含义。
另外,在本公开中,由于可工作范围可以基于常规工作确定,因此变量的任何两个数字都可以构成所述变量的可工作范围,并且所指示的任何范围都可以包括或排除端点。另外,所指示的变量的任何值(不论它们是否用“约”指示)可以指精确值或近似值并且包括等同物,并且在一些实施例中,可以指平均值、中值、代表值、大部分值等。
在本公开中,在未指定条件和/或结构的情况下,鉴于本公开,本领域的技术人员可以容易地按照常规实验提供此类条件和/或结构。在所有所公开的实施例中,出于预定目的,在一个实施例中所用的任何要素都可以用与其等效的任何要素替代,包括本文中明确地、必要地或内在地公开的那些要素。此外,本发明可以同等地适用于设备和方法。
将参照各种方面中的优选实施例来解释实施例。然而,本发明不限于所述优选实施例。
一些实施例涉及一种形成用于进行间隔物界定图案化的间隔物的方法,所述方法在包含以下的步骤中进行:(i)将图案转移膜沉积在模板上,所述模板具有由在下方层上形成的心轴图案化的表面;(ii)对整个上表面覆盖有所述图案转移膜的所述模板进行干式蚀刻,并且由此选择性地去除在所述心轴的顶部上形成的所述图案转移膜的顶部部分和在所述下方层上形成的所述图案转移膜的水平部分,同时留下所述心轴作为芯材料并且留下在所述心轴的侧壁上形成的所述图案转移膜的侧壁部分作为间隔物;以及(iii)对所述芯材料进行干式蚀刻,从而形成空白空间,所述模板由此具有由所述间隔物在所述下方层上图案化的表面,所述间隔物以第一倾斜角度朝向所述空白空间向内倾斜,所述第一倾斜角度被定义为如相对于竖直于所述空白空间的底部的线所测量的,每一侧壁部分的内表面的角度,其中倾斜角度为零表示完全竖直并且倾斜角度为正值表示向内倾斜。
在上文中,改进包含:在步骤(i)中,使在深度方向上具有不同膜应力的共形图案转移膜沉积作为图案转移膜,其中所述共形图案转移膜的下半部具有第一膜应力,并且所述共形图案转移膜的上半部具有第二膜应力,其中所述第一膜应力比所述第二膜应力更加压缩,由此在步骤(iii)中,间隔物以小于第一倾斜角度的第二倾斜角度朝向空白空间更小地向内倾斜。图案转移膜的下半部和上半部构成双层膜。
在本公开中,“双层”膜或间隔物可以指具有双层结构的膜或间隔物,其中当在厚度(或深度)方向上数学地、地理地或虚拟地将所述结构分割成下半部和上半部时,各自作为整体的下半部和上半部在物理、化学和/或任何其它特征或特性、组成或材料和/或形成工艺中具有差异,其中(a)所述差异在厚度方向上不连续地显现在形成于所述下半部与上半部中所包括两个相邻离散层之间的离散(或可检测)边界(或介面)处,其中所述离散边界存在于所述下半部或所述上半部中或存在于所述下半部与上半部之间的虚拟边界处;(b)所述差异在厚度方向上连续地显现,而没有离散(或可检测)边界(或介面),其中所述物理、化学和/或任何其它特征或特性、组成或材料和/或形成工艺在厚度方向上逐渐改变(基本上没有不连续点);或(c)所述差异在厚度方向上以(a)和(b)中所描述方式的任何组合形式显现。在一些实施例中,双层结构由满足(a)的两个离散层构成,其中所述离散边界存在于下半部或上半部中或存在于所述下半部与上半部之间的虚拟边界处,其中每一层都可以由满足上文(a)、(b)或(c)的单个层或多个层构成。在一些实施例中,双层膜可以由两个单膜组成。短语“由……组成”表示排除未列出的组件。然而,“由……组成”不排除与本发明不相关的额外组件,如通常与其相关联的天然氧化膜。双层膜可以与另一膜接触。然而,另一膜不构成双层膜的一部分,这是由于所述另一膜不构成竖直间隔物的一部分。
在本公开中,术语“共形”可以一般是指在较小区域内保持方向之间的正确角度,例如当将图案转移膜沉积在心轴上时维持心轴(芯材料)拐角处的角度,以便沿着所述心轴的侧壁形成膜,不论沉积于所述心轴的顶部上的膜厚度如何,所述膜都具有沿着所述侧壁基本上均匀的厚度。在一些实施例中,“共形”是指沉积于侧壁上中心处的膜厚度与沉积于顶部上中心处的膜厚度的比率接近一(例如1±0.2或更小),其指示沿着心轴的侧壁形成膜,所述膜沿着所述侧壁具有基本上均匀的厚度(“基本上均匀的”是指最大差异小于20%或更小或小于10%或更小)。
在一些实施例中,共形图案转移膜由多个层(例如2到6个离散层)构成。
在一些实施例中,多个层由第一层和沉积于所述第一层上的第二层构成,其中所述第一层的膜应力比所述第二层的膜应力更加压缩,并且所述第一层的厚度为所述第一层和所述第二层的总厚度的25%到75%(例如40%到65%)。可以设置第一层和第二层的厚度以便调整所述层的最终倾斜角度。即,层的厚度越大,层的变形力越高,这是因为较厚层不容易弯曲,并且还可以在另一层上施加更多变形力。举例来说,倾斜角度的改变可以通过改变S1、T1、 S2和T2使用以下因子来加以操纵(其中S1和T1分别是第一层的膜应力和厚度,而S2和T2分别是第二层的膜应力和厚度):
F=(S1-S2)×(T1×T2)/(T1+T2)3 (1)
举例来说,与当T1/T2=5/5时的倾斜角度相比较,当T1/T2=4/6时,可以估计倾斜角度减小4%(即,[(5×5)/(5+5)3-(4×6)/(4+6)3]/[(5×5)/(5+5)3]=0.04)。类似地,与当T1/T2=5/5时的倾斜角度相比较,当T1/T2=3/7、2/8和1/9时,可以估计倾斜角度分别减小16%、36%和64%。因此,当T1/T2是大约4/6或更大但小于5/5时,预期倾斜角度与当T1/T2=5/5时的倾斜角度基本上相同。另一方面,当T1/T2是大约2/8或更小时,预期倾斜角度显著小于当T1/T2=5/5时的倾斜角度。因此,当使用具有不同膜应力值的多个层时,最终倾斜角度可以通过改变每一层的厚度来加以调整。
上文的等式(1)可以如下导出。图18的竖直间隔物示意性表示用于在所述间隔物由多个层构成时解释竖直间隔物的力学(层数是n)。图19的竖直间隔物示意性表示用于在所述间隔物由两个层构成时解释竖直间隔物的力学。如图18中所示出,假定在衬底110上形成的间隔物111由n个层(n是整数)构成,其中X轴设置在所述层的厚度方向上。当间隔物111向内倾斜时,在厚度x(相对于设置在厚度x处的边界,内层被压缩,而外层被拉伸) 处通过倾斜向所述间隔物赋予的应力σL可以表示为σL=ax+b(a、b是常量;确切地说,a与倾斜角度成比例)。由间隔物材料产生的应力σC可以表示为σC=σ1(0<x<t1),σ2(t1<x<t2),……,σn(tn-1<x<t)。在厚度x处的应力σ(x)是上文两个组分(即,σL(x)和σC(x))的总和。因此,在厚度x处的势能W(x)可以表示为W(x)∝{σL(x)+σC(x)}2。对于整个间隔物,势能W总计可以通过关于x对上式进行积分来获得,这是由于W总计=∫0 tW(x)dx∝∫0 t{σL(x)+σC(x)}2dx。势能具有最小值,即,W总计(a,b)=最小值。因此,可以获得以下同时等式,并且通过对所述等式求解,可以估计a、b和倾斜角度的值:
在上文中,当间隔物如图19中所示出由两个层构成时,同时等式(2) 的解如下导出:
a=6(σ1-σ2)(t-t1)(t1/t3) (3)
在T1=t1,(T1+T2)=t,S1=σ1,S2=σ2并且F=a/6的情况下,等式(1)与等式(3)相同。根据等式(1)或(3),在其中间隔物由具有不同应力值的两个层构成并且总厚度恒定的配置中,当层A厚度与层B厚度的比率是1/1时,倾斜角度相对于由单个层构成的间隔物的倾斜角度的差异变为最大值,并且当所述比率不是1/1时,由两个层构成的间隔物的倾斜角度变得更接近由单个层构成的间隔物的倾斜角度,其中所述间隔物的最终倾斜角度可以基于如上文所论述的等式(1)的“F”来加以估计。
在一些实施例中,第一层的厚度等于或大于第二层的厚度。图案转移膜的总厚度可以取决于光刻的分辨率、间隔物的预期应用等而广泛地变化,并且通常可以在大约3nm到大约40nm(更通常大约10nm到大约40nm)的范围内。根据非限制性理论,通过设置第一层的厚度等于或大于第二层的厚度,虽然间隔物的内层(内层)的顶部比间隔物的外层(第二层)更容易受到来自等离子体的离子轰击蚀刻,但外层的顶部也受到由所述内层的蚀刻后表面反射的离子辐射照射,从而促进外层顶部的蚀刻并使间隔物的顶部平坦化。
在一些实施例中,共形图案转移膜具有在深度方向上变化的膜应力,其中所述膜应力在向外方向上逐渐或连续地增加。膜应力的逐渐或连续增加可以使用在图案转移膜的横截面视图中绘制的近似直线或曲线来确定(可能存在局部不连续点)。在一些实施例中,可以在图案转移膜的整个厚度中观察到膜应力的逐渐或连续增加。在一些实施例中,膜应力的逐渐增加是逐步增加(在厚度方向上间歇性增加)。在上文中,图案转移膜可以由具有相同组成的单个离散膜或具有不同组成的多个不同离散膜构成。
在一些实施例中,第一层的膜应力与第二层的膜应力之间的差异在大约 150MPa与大约800MPa之间(例如大约200MPa到大约600MPa)。
在一些实施例中,第一层和第二层独立地由任何合适的材料构成,如氧化硅,氮化硅,碳化硅,氧化钛和氮化钛等。氧化硅的特征在于主要在于 Si-O键,但还可以含有碳原子、氢原子和其它非大量组分,如与沉积工艺相关联的不可避免的杂质,并且氮化硅的特征主要在于Si-N键,但还可以含有碳原子、氢原子和其它非大量组分,如与沉积工艺相关联的不可避免的杂质。在一些实施例中,第一层和第二层由不同的组合物构成;举例来说,所述第一层由氮化硅构成,而所述第二层是氧化硅。在一些实施例中,第一层和第二层由相同的组合物,如氧化硅构成。
每一图案转移膜的膜应力都可以通过操纵沉积条件来加以调整。举例来说,对于氧化硅膜,通过在PEALD的一个循环(其中模板暴露于的氧-氩等离子体中通常一次)中n次(n是整数)插入子循环(其中模板暴露于不具有氧的氩等离子体中),可以调整膜应力。举例来说,对于氮化硅膜,通过在 PEALD的一个循环中改变RF功率脉冲的持续时间和/或所施加的RF功率,可以调整膜应力。通过操纵上文参数,膜应力可以被调整成恒定或在厚度方向上逐步或连续地改变。
在一些实施例中,第二倾斜角度在大约-1度到大约1度的范围内(在其它实施例中,在大约-1度到大约2度的范围内)。倾斜角度被定义为在横截面视图中表示间隔物侧壁部分内表面的线与在横截面视图中与表示空白空间底面的线竖直的线之间在相交点处形成的角度。表示内表面的线是表示在横截面视图中穿过相交点的内表面的近似直线。表示底面的线是表示在横截面视图中穿过相交点的底面的近似直线。当倾斜角度是零时,间隔物的内表面完全竖直于底面,当倾斜角度是正值时,间隔物的内表面向内倾斜,并且当倾斜角度是负值时,间隔物的内表面向外倾斜。
在一些实施例中,多个层通过等离子体增强型原子层沉积(PEALD)来加以沉积,所述等离子体增强型原子层沉积(PEALD)能够使高度共形膜沉积(例如,保形性为80%或更高或90%或更高)。
在一些实施例中,第一层的抗干式蚀刻性比第二层更小。通过操纵第一层和第二层的抗干式蚀刻性,可以调整竖直间隔物的顶部轮廓。在一些实施例中,在第一层与第二层之间的抗干式蚀刻性差异使得在本身为回蚀工艺的步骤(ii)(对模板进行干式蚀刻的步骤(ii))中,每一间隔物的顶部通过抑制干式蚀刻对所述间隔物的肩部损失而变得基本上平坦。抗干式蚀刻性指示使用在回蚀工艺期间使用等离子体蚀刻间隔物材料的快速或缓慢程度(即,干式蚀刻速率)。在一些实施例中,在第一层与第二层之间的干式蚀刻速率差异在大约0.05纳米/秒到大约0.5纳米/秒的范围内,通常大0.1纳米/秒到0.3纳米/ 秒的范围内,以便有效地使竖直间隔物的顶部平坦化。在一些实施例中,对于通过等离子体进行的回蚀工艺(步骤(ii)),将含氟蚀刻剂(如CF4、CHF3或C4F8)与氩气组合使用(用于蚀刻氮化硅,另外的氧),而对于通过等离子体进行的剥离工艺(灰化工艺)(步骤(iii)),使用氧气或氩气作为蚀刻剂。为了蚀刻由氧化硅外层和氮化硅内层构成的图案转移膜,首先,在设置用于蚀刻氧化硅的条件下蚀刻氧化硅外层,并且接着在设置用于从心轴顶部去除氧化硅外层的时间段之后,在设置用于蚀刻氮化硅的条件下蚀刻氮化硅内层。在一些实施例中,在剥离工艺期间,竖直间隔物的顶部的平坦化连续地进行。
在另一方面中,一些实施例涉及一种形成用于进行间隔物界定图案化的间隔物的方法,所述方法在包含以下的步骤中进行:(i)将图案转移膜沉积在模板上,所述模板具有由在下方层上形成的心轴图案化的表面;(ii)对整个上表面覆盖有所述图案转移膜的所述模板进行干式蚀刻,并且由此选择性地去除在所述心轴的顶部上形成的所述图案转移膜的顶部部分和在所述下方层上形成的所述图案转移膜的水平部分,同时留下所述心轴作为芯材料并且留下在所述心轴的侧壁上形成的所述图案转移膜的侧壁部分作为间隔物;以及(iii)对所述芯材料进行干式蚀刻,从而形成空白空间,所述模板由此具有由所述间隔物在所述下方层上图案化的表面,所述间隔物以第一倾斜角度远离彼此向外倾斜,所述第一倾斜角度被定义为如相对于竖直于所述空白空间的底部的线所测量的,每一侧壁部分的内表面的角度,其中倾斜角度为零表示完全竖直并且倾斜角度为负值表示向外倾斜。
在上文中,改进包含:在步骤(i)中,使在深度方向上具有不同膜应力的共形图案转移膜沉积作为图案转移膜,其中所述共形图案转移膜的下半部具有第一膜应力,并且所述共形图案转移膜的上半部具有第二膜应力,其中所述第一膜应力比所述第二膜应力更加拉伸,由此在步骤(iii)中,间隔物以大于第一倾斜角度的倾斜角度远离彼此更小地向外倾斜。当竖直间隔物倾向于在减小倾斜角度的方向上向外倾斜时,本文所公开的实施例也可能适用,由此形成倾斜角度基本上为零(例如±1度)的竖直间隔物。
在再另一方面中,一些实施例涉及一种形成用于间隔物界定多重图案化的竖直间隔物的方法,其包含:(i)在反应空间中提供模板,所述模板具有由在下方层上形成的心轴图案化的表面;(ii)在所述模板的整个图案化表面上沉积具有第一膜应力的第一共形图案转移膜,并且连续地沉积具有第二膜应力的第二共形图案转移膜,其中所述第一膜应力和所述第二膜应力不同; (iii)对整个上表面覆盖有所述第一图案转移膜和所述第二图案转移膜的所述模板进行干式蚀刻,并且由此选择性地去除在所述心轴的顶部上形成的所述第一图案转移膜和所述第二图案转移膜的一部分以及所述第一图案转移膜和所述第二图案转移膜的水平部分,同时留下所述心轴作为芯材料并且留下所述第一图案转移膜和所述第二图案转移膜的竖直部分作为竖直间隔物;以及 (iv)对所述芯材料进行干式蚀刻,从而在所述竖直间隔物之间形成空白空间,所述模板由此具有由所述间隔物在所述下方层上图案化的表面。
在一些实施例中,上文方法进一步包含:(v)测量所述竖直间隔物的倾斜角度,所述倾斜角度被定义为如相对于竖直于所述空白空间的底部的线所测量的,所述竖直间隔物中面向所述空白空间的内表面的角度,其中倾斜角度为零表示完全竖直并且倾斜角度为正值表示向内倾斜,后接判断所述倾斜角度是否处于目标范围内;(vi)再次进行步骤(i)到(iv):(a)如果所述倾斜角度处于目标范围内,那么不进行改变以形成最终竖直间隔物;(b)如果所述倾斜角度大于所述目标范围,那么进行改变,其中使压缩应力以可测量程度高于第一膜应力的共形图案转移膜沉积作为步骤(ii)中的第一共形图案转移膜,和/或使拉伸应力以可测量程度高于第二膜应力的共形图案转移膜沉积作为步骤(ii)中的第二共形图案转移膜;或(c)如果所述倾斜角度小于所述目标范围,那么进行改变,其中使压缩应力以可测量程度低于第一膜应力的共形图案转移膜沉积作为步骤(ii)中的第一共形图案转移膜,和/或使拉伸应力以可测量程度低于第二膜应力的共形图案转移膜沉积作为步骤(ii)中的第二共形图案转移膜;以及(vii)如果进行步骤(vi)中的(b)或(c),那么在增加(b)或(c)中所用的可测量程度之后,重复步骤(v)和(vi)。通过这些步骤,可以有效地形成具有所期望的或目标倾斜角度的竖直间隔物。
在一些实施例中,第一共形图案转移膜具有第一抗干式蚀刻性,并且第二共形图案转移膜具有第二抗干式蚀刻性;并且步骤(v)进一步包含判断竖直间隔物顶部是否是基本上平坦的,其中如果所述竖直间隔物的顶部不是基本上平坦的,那么:在步骤(vi)中,使抗干式蚀刻性以可测量程度小于第一抗干式蚀刻性以及第二共形图案转移膜的第一共形图案转移膜沉积作为第一共形图案转移膜,和/或使抗干式蚀刻性以可测量程度高于第二抗干式蚀刻性以及第一共形图案转移膜的第二共形图案转移膜沉积作为第二共形图案转移膜;以及在步骤(vii)中,在增加所述可测量程度之后,重复步骤(v)和(vi),直到所述竖直间隔物的顶部基本上平坦为止。因此,可以有效地形成不仅具有所期望倾斜角度并且还具有基本上平坦顶部的竖直间隔物。
在本公开中,间隔物的“基本上平坦”顶部可以指以下顶部,其中顶部弯曲或倾斜部分的高度是大约10nm或更小,或替代地或另外,小于所述间隔物的高度的20%(优选地10%或更小)(参见图11)。
在又另一方面中,一些实施例涉及一种形成用于进行间隔物界定图案化的间隔物的方法,所述方法在包含以下的步骤中进行:(i)将图案转移膜沉积在模板上,所述模板具有由在下方层上形成的心轴图案化的表面;(ii)对整个上表面覆盖有所述图案转移膜的所述模板进行干式蚀刻,并且由此选择性地去除在所述心轴的顶部上形成的所述图案转移膜的顶部部分和在所述下方层上形成的所述图案转移膜的水平部分,同时留下所述心轴作为芯材料并且留下在所述心轴的侧壁上形成的所述图案转移膜的侧壁部分作为间隔物;以及(iii)对所述芯材料进行干式蚀刻,从而形成空白空间,所述模板由此具有由所述间隔物在所述下方层上图案化的表面,其中损失或蚀刻掉每一间隔物中面向所述空白空间的肩部部分,所述肩部部分是所述间隔物的顶部的外部拐角,从而形成从所述间隔物顶部的外侧向内侧倾斜的表面。
在上文中,改进包含:在步骤(i)中,使由包括第一层和沉积于所述第一层上的第二层的双层膜构成的共形图案转移膜沉积作为图案转移膜,其中所述第一层的抗干式蚀刻性比所述第二层小,其中在所述第一层与所述第二层之间的抗干式蚀刻性差异使得在步骤(iii)中,每一间隔物的顶部通过抑制干式蚀刻对所述间隔物的肩部损失而变得基本上平坦。因此,可以有效地形成具有基本上平坦顶部的间隔物。
在一些实施例中,第一层由氮化硅构成,并且第二层由氧化硅构成。
将参照图来解释实施例。然而,本发明不限于所述图。
图2的流程图示出根据本发明一个实施例的制造竖直间隔物结构的步骤。在步骤(i)中,在反应空间中提供模板,所述模板具有由在下方层上形成的心轴图案化的表面。心轴的图案可以通过使用常规UV光或极端UV光进行光刻来形成。心轴由有机光致抗蚀剂材料制成。
在步骤(ii)中,在模板的整个图案化表面沉积具有第一膜应力的第一共形图案转移膜,并且连续地沉积具有第二膜应力的第二共形图案转移膜,其中所述第一膜应力和所述第二膜应力不同。通常,共形图案转移膜通过ALD,如PEALD、热ALD或任何等效沉积方法来形成。
在步骤(iii)中,对整个上表面覆盖有第一图案转移膜和第二图案转移膜的模板进行干式蚀刻,由此选择性地去除在心轴顶部上形成的所述第一图案转移膜和所述第二图案转移膜的一部分以及所述第一图案转移膜和所述第二图案转移膜的水平部分,同时留下所述心轴作为芯材料并且留下所述第一图案转移膜和所述第二图案转移膜的竖直部分作为竖直间隔物。此步骤也被称为回蚀。干式蚀刻通常使用选择用于目标膜的组合物或材料的合适蚀刻剂气体使用等离子体来进行。优选地,等离子体蚀刻使用电容耦合等离子体或直接等离子体,这是由于此类等离子体除自由基之外还含有离子,而远程等离子体基本上不具有离子。此外,此类等离子体通常是各向异性并且适用于图案化。
在步骤(iv)中,对芯材料进行干式蚀刻,从而在竖直间隔物之间形成空白空间,模板由此具有由所述竖直间隔物在下方层上图案化的表面。此步骤也被称为灰化或剥离。选择用于待去除的组合物或材料的蚀刻剂气体。
图3的流程图示出根据本发明另一个实施例的调整竖直间隔物结构的形状的步骤,当根据图2中所示出的流程图获得的膜轮廓不令人满意,通常在间隔物的竖直程度方面不令人满意时,可以进行所述步骤。在步骤(v)中,测量竖直间隔物的倾斜角度,后接在步骤D1中判断所述倾斜角度是否处于目标范围内。图7示出倾斜角度。图7是根据本发明一个实施例的在衬底上制造的间隔物的横截面视图的扫描透射电子显微镜(STEM)照片,标注所述照片以展示倾斜角度。如图7中所示出,倾斜角度θ被定义为如相对于与空白空间 110的底部102的底部表面102a竖直的线所测量的,竖直间隔物104中面向所述空白空间110的内表面104a的角度,其中倾斜角度为零表示完全竖直并且倾斜角度θ为正值表示向内倾斜,而倾斜角度θ为负值表示向外倾斜。
在步骤D1中,判断倾斜角度是否处于目标范围内。如果判断倾斜角度处于目标范围内,那么在步骤(vi)(a)中,不做改变地再次进行步骤(i)到 (iv)以形成最终竖直间隔物,即,工艺结束。
在步骤D1中,如果判断倾斜角度未落入目标范围内并且大于目标范围,那么在步骤(vi)(b)中,有改变地再次进行步骤(i)到(iv),其中使压缩应力以可测量程度高于第一膜应力的共形图案转移膜沉积作为步骤(ii)中的第一共形图案转移膜,和/或使拉伸应力以可测量程度高于第二膜应力的共形图案转移膜沉积作为步骤(ii)中的第二共形图案转移膜。
在步骤D1中,如果判断倾斜角度未落入目标范围内并且小于目标范围,那么在步骤(vi)(c)中,有改变地再次进行步骤(i)到(iv),其中如果倾斜角度小于预设范围,那么使压缩应力以可测量程度低于第一膜应力的共形图案转移膜沉积作为步骤(ii)中的第一共形图案转移膜,和/或使拉伸应力以可测量程度低于第二膜应力的共形图案转移膜沉积作为步骤(ii)中的第二共形图案转移膜。
在步骤(vi)(b)或步骤(vi)(c)之后的步骤中,在增加步骤(vi)(b) 或步骤(vi)(c)中所用的可测量程度之后,工艺返回到步骤(v)和(vi)。
步骤D2和步骤(vii)是使得间隔物的顶部能够基本上平坦的额外或任选的步骤(额外、任选或替代的流程用虚线指示)。在步骤D2中,判断竖直间隔物的顶部是否是基本上平坦的。如果判断竖直间隔物的顶部不是基本上平坦的,那么在步骤(vii)中,使抗干式蚀刻性以可测量程度小于第一抗干式蚀刻性以及第二共形图案转移膜的第一共形图案转移膜沉积作为第一共形图案转移膜,和/或使抗干式蚀刻性以可测量程度高于第二抗干式蚀刻性以及第一共形图案转移膜的第二共形图案转移膜沉积作为第二共形图案转移膜;并且在增加所述可测量程度之后,工艺移动到步骤(vi)(b)或步骤(vi)(c),以便不仅调整竖直间隔物的倾斜角度并且还调整其顶部轮廓。
在一些实施例中,调整竖直间隔物的顶部轮廓可以独立于调整竖直间隔物的倾斜角度来进行。图15的流程图示出根据本发明另一个实施例的调整竖直间隔物结构的顶部轮廓的步骤。在步骤(1)中,评估竖直间隔物的顶部轮廓。在步骤(2)中,判断间隔物的顶部是否是基本上平坦的。如果判断间隔物的顶部是基本上平坦的,那么在步骤(3)中,所述工艺返回到图2的流程图中所示出的步骤(i)到(iv),而不对图案转移膜进行改变以便形成最终竖直间隔物。如果判断间隔物的顶部不是基本上平坦的,那么在步骤(4)中,制备干式蚀刻速率(dry etch rate,DER)比第一图案转移膜高的图案转移膜作为第一图案转移膜,和/或制备DER比第二图案转移膜低的图案转移膜作为第二图案转移膜。在步骤(5)中,所述工艺返回到图2的流程图中所示出的步骤(i)到(iv)以形成修改后的图案转移膜,并且接着,所述工艺返回到步骤 (1)。
根据上文所论述的流程图,可以如图5和6中所示出在间隔物界定双重图案化(SDDP)中形成竖直间隔物。图5是根据本发明一个实施例的双重图案化(步骤(a)到(c))的示意性表示。在步骤(a)中,将心轴(光致抗蚀剂)101在下方层102上图案化为芯材料。在步骤(b)中,使包含第一层105a 和第二层105b的图案转移膜105沉积以全部覆盖心轴101的暴露表面和下方表面102的暴露表面。在步骤(c)中,通过干式蚀刻,对膜105和心轴101 的水平部分进行蚀刻,以便形成由内层106a(第一层105a)和外层106b(第二层105b)构成的间隔物106。通过使用上文工艺,由步骤(c)中间隔物106 构成的图案所具有的间距可以是步骤(a)中光致抗蚀剂101图案的间距的一半,即,可以实现间距双倍密集的图案化。在此工艺中,如本公开中所论述,由于间隔物106由双层图案转移膜105形成,故所述间隔物的倾斜角度可以通过使用第一层与第二层之间的膜应力差异来加以调整,由此形成倾斜角度基本上为零(并非如图4中所示,在芯剥离步骤(c)期间和之后朝向空白空间 110倾斜)的间隔物。可以有效地抑制倾斜现象,以便使得半导体制造商容易精确地连续进行后续整合工艺。预期上文特征将随着技术进步和小型化进展而变得更重要。
图6是根据本发明另一个实施例的双重图案化(步骤(a)到(c))的示意性表示。在步骤(a)中,将心轴(光致抗蚀剂)101在下方层102上图案化为芯材料。在步骤(b)中,使包含第一层107a和第二层107b的图案转移膜107沉积以全部覆盖心轴101的暴露表面和下方表面102的暴露表面。第一层107a的干式蚀刻速率比第二层107b高。在步骤(c)中,通过干式蚀刻,对膜107和心轴101的水平部分进行蚀刻,以便形成由内层108a(第一层107a) 和外层108b(第二层107b)构成的间隔物108。通过使用上文工艺,由步骤 (c)中间隔物106构成的图案所具有的间距可以是步骤(a)中光致抗蚀剂 101图案的间距的一半,即,可以实现间距双倍密集的图案化。在此工艺中,如本公开中所论述,由于间隔物108由双层图案转移膜107形成,故所述间隔物的顶部轮廓112可以通过使用第一层与第二层之间的干式蚀刻速率差异来加以调整,由此使所述间隔物的顶部部分112变得基本上平坦(抑制如图4和 5中所示的肩部损失)。可以有效地抑制肩部损失现象,以便使得半导体制造商容易精确地连续进行后续整合工艺。预期上文特征将随着技术进步和小型化进展而变得更重要。
在图6中所示出的间隔物中,由于双层间隔物的顶部边缘是基本上平坦的,故通过在图6中的步骤(a)中使用间隔物108作为心轴101并且重复步骤(b)和(c),所述间隔物可以有效并且适当地不仅应用于SDDP,而且还应用于间隔物界定四重图案化(SDQP)或较高级别(间隔物界定多重图案化 (spacer-defined multiple patterning,SDMP))。
在不打算限制本发明的情况下,平坦化机制可以如图12中所示出而解释。图12示出形成具有平坦顶部的间隔物的机制,其中(a)示意性地示出用于形成所述间隔物的双层膜,并且(b)到(f)是展示根据本发明实施例的步骤的放大示意性局部视图。在蚀刻之前,如(a)中所示出,在衬底102上形成的心轴101覆盖有图案转移膜107的第一层(内层)107a,所述第一层(内层) 107a覆盖有图案转移膜107的第二层(外层)107b。在此实例中,内层107a由氮化硅构成,而外层107b由氧化硅构成,其中内层107a的干式蚀刻速率高于外层107b。图案转移膜107的侧壁部分将形成如(b)中所示出的间隔物,所述间隔物是图案转移膜107的上部侧壁部分(肩部部分)60的放大视图。首先,通过含有等离子体的离子各向异性地显著蚀刻肩部部分处的外层107b,由此暴露肩部部分处的内层107a,其中内层107a的蚀刻后表面107a1和外层 107b的蚀刻后表面107b1如(c)中所示出而暴露。由于肩部部分60圆化,故如(c)中所示出,通过各向异性蚀刻形成的暴露表面自然倾斜。随着各向异性蚀刻进行(在此实例中,将蚀刻条件从被设置成主要用于蚀刻氮化硅的那些蚀刻条件切换为被设置成主要用于蚀刻氧化硅的那些蚀刻条件),由于内层 107a的干式蚀刻速率比外层107b高,故内层107a的暴露表面107a1受到的由来自等离子体的离子轰击或离子辐射进行的蚀刻比外层107b的暴露表面 107b1受到的多,由此如(d)中所示出,形成内层107a的暴露表面107a2以及外层107b的暴露表面107b2和暴露表面107b3。由于内层107a与外层107b 之间的蚀刻速度差异(其中内层107a受到的蚀刻比外层107b更快),形成外层107b的暴露表面107b3,由此在内层107a与外层107b之间形成阶梯(锥形突起)。由于暴露表面107a2倾斜并且离子轰击在暴露表面107a2上朝向暴露表面107b3反射(如由(d)中的箭头所示出),暴露表面107b3接收反射离子,并且锥形突起由所述反射离子从其尖端蚀刻。随着各向异性蚀刻进一步进行,由暴露表面107a3反射的离子保持轰击锥形突起,由此如(e)中所示出,降低所述锥形突起的高度,其中由虚线指示的部分107b5得到去除,由此形成暴露表面107b4。随着各向异性蚀刻进一步进行,降低突起的高度,并且如(f)中所示出,暴露表面107a4和暴露表面107b6导致形成基本上平坦的表面。
本文所公开的双层膜可以用于各种应用,包括间隔物界定双重图案化 (SDDP)。图14是根据本发明一个实施例的使用SDDP进行图案转移和目标蚀刻(步骤(a)到(j))的示意性表示,其中双层膜用作图案转移膜以将图案从第一模板转移到第二模板。抗反射层(antireflective layer,ARL)94用作用于在SDDP工艺中增加图案密度(例如,间距减小)的第一模板。蚀刻硬掩模82用作用于蚀刻目标层81的第二模板。在图14中的步骤(a)中,在抗反射层94(由例如非晶碳构成)上形成光致抗蚀剂图案93(由例如酚醛清漆构成),使得抗反射层94可以在步骤(b)中的光致抗蚀剂图案中进行蚀刻,所述步骤(b)是将图案转移到第一模板94的步骤。在步骤(c)中,双层膜 95(作为图案转移膜)根据所公开实施例或其等同物中的任一个进行沉积,后接在本身为间隔物反应性离子蚀刻(reactive ion etch,RIE)步骤的步骤(d) 中蚀刻。通过剥离抗反射层94的材料(芯部分96中的光致抗蚀剂材料),在步骤(e)中形成竖直间隔物84。由于双层膜95具有高蚀刻选择性,故用于在其上形成间隔物的抗反射层94(第一模板)可以较薄,并且双层膜可以在蚀刻期间保留以在步骤(e)中形成竖直间隔物84。在一些实施例中,抗反射层的厚度是约5到50nm(通常10到30nm),并且双层膜的厚度是约5到 50nm(通常10到20nm)。在步骤(f)中,通过蚀刻将图案从竖直间隔物 84转移到第二模板82以形成第二竖直间隔物74,并且在步骤(g)中,剥离第一竖直间隔物84(双层间隔物)。由于双层间隔物84的顶部边缘是平坦的,故可以准确地实现具有第二竖直间隔物74的第二模板82的形成。在步骤(h) 中,使用第二竖直间隔物74使在硅衬底70上形成的目标层81经历干式蚀刻。在步骤(i)中,剥离第二竖直间隔物74。在一些实施例中,抗反射层、蚀刻硬掩模、双层膜(间隔物)和目标层可以通过本文所公开的方法或其等同物中的任一种或通过脉冲PECVD或PEALD来进行沉积。
双层不仅对HCl和TMAH湿式蚀刻具有抗性,而且还对例如BCl3、 BCl3/Ar干式蚀刻具有抗性,并且因此在步骤(f)中,当将图案转移到第二模板82时,双层84保留所述图案。另一方面,双层膜对例如氧化、湿式蚀刻化学交替氧化和HF的组合(常见于半导体加工中)或基于氧或CF4的干式蚀刻敏感,并且因此在步骤(g)中,双层间隔物84可以得到有效剥离。
具有不同膜应力的图案转移膜可以通过操纵沉积参数,如RF功率、RF 功率脉冲的持续时间、反应物的流动速率、另外进行的子循环或再形成循环的次数等来形成。鉴于本公开,技术人员可以容易地按照常规实验确定此类沉积参数。
对于用作图案转移膜的第一层和/或第二层的氧化硅膜,例如,通过操纵反应物的馈料,可以调整所得氧化硅膜的膜应力。图16示出根据本发明一个实施例的沉积具有不同膜应力的氧化硅膜的一个循环中的工艺序列。其中所述一个循环由循环A和循环B构成。在此实施例中,循环A是主要循环,而循环B是子循环(次要循环)。两个循环都包含“馈料”,其中将Si前体馈送到反应空间中以使得所述前体吸附或化学吸附在模板表面上;“净化”,其中净化所述反应空间以使得从模板表面去除未吸附或化学吸附的过量前体;“RF”,其中向所述反应空间施加RF功率以使得吸附或化学吸附的前体暴露于等离子体中以形成原子层;和“净化”,其中净化所述反应空间以使得从模板表面去除未反应的组分和副产物。使用在整个循环中恒定并连续地供应到反应空间中的运载气体流向反应空间中供应前体。在循环A,在整个循环A中将氧气恒定并连续地供应到反应空间中(以便产生氧氩等离子体),而在循环 B,在整个循环B中不向反应空间中供应氧气(以便产生氩等离子体)。此外,循环B中的RF功率可以高于循环A中的RF功率,和/或循环B中的RF功率脉冲持续时间可以比循环A中长。在进行循环A一次之后,进行n次循环B (n是0到10,例如1到5的整数)。通过改变循环B的重复次数(n),可以在压缩方向上改变所得氧化硅膜的膜应力。另外或替代地,通过改变循环 A中的RF功率和/或RF功率脉冲持续时间,也可以调整氧化硅膜的膜应力。在一些实施例中,氧化硅膜的膜应力可以在大约+100MPa到大约-300MPa,优选地大约0MPa到大约-200MPa的范围内改变。
氧化硅的干式蚀刻速率可以通过改变例如反应气体流动速率与稀释气体流动速率的比率来加以调整。在一些实施例中,取决于干式蚀刻条件,氧化硅的干式蚀刻速率可以在大约0.7纳米/秒到大约1.5纳米/秒,优选地大约0.5 纳米/秒到大约1.0纳米/秒的范围内改变。
为了沉积氧化硅膜,双二乙基氨基硅烷(bisdiethylaminosilane,BDEAS)、三(二甲基氨基)硅烷(tris(dimethylamino)silane,3DMAS)等可以有利地单独或以前述两种或更多种的任何组合形式用作前体。Ar、He等可以有利地单独或以前述两种或更多种的任何组合形式用作运载气体和稀释气体中的每一种。 O2、N2O等可以有利地单独或以前述两种或更多种的任何组合形式用作反应气体。
在一些实施例中,可以通过PEALD,使用图16中所示出的工艺序列来执行氧化硅膜的沉积循环,所述沉积循环的一个循环在下表1中所示的条件下进行。
表1(数值是近似值)
在上文中,对于其它尺寸的衬底,可以应用从上文计算出的每厘米2瓦数。
对于用作图案转移膜的第一层和/或第二层的氮化硅膜,例如,通过操纵反应物的进料,可以调整所得氮化硅膜的膜应力。图17示出根据本发明一个实施例的沉积具有不同膜应力的氮化硅膜的一个循环中的工艺序列。在此实施例中,循环包含“馈料”,其中将Si前体馈送到反应空间中以使得所述前体吸附或化学吸附在模板表面上;“净化1”,其中净化所述反应空间以使得从模板表面去除未吸附或化学吸附的过量前体;“RF”,其中向所述反应空间施加 RF功率以使得吸附或化学吸附的前体暴露于等离子体中以形成原子层;和“净化2”,其中净化所述反应空间以使得从模板表面去除未反应的组分和副产物。使用在整个循环中恒定并连续地供应到反应空间中的运载气体流向反应空间中供应前体。在循环中,在整个循环中将Ar和N2恒定并连续地供应到反应空间中。通过改变循环中的RF功率和/或RF功率脉冲持续时间,可以调整氮化硅膜的膜应力。举例来说,通过增加RF功率脉冲的持续时间,可以在压缩方向上改变氮化硅的膜应力。在一些实施例中,氮化硅膜的膜应力可以在大约-300MPa到大约-900MPa,优选地大约-400MPa到大约-800MPa的范围内改变。
氮化硅的干式蚀刻速率可以通过循环中的RF功率脉冲持续时间来加以调整。在一些实施例中,取决于干式蚀刻条件,氮化硅的干式蚀刻速率可以在大约0.5纳米/秒到大约2纳米/秒,优选地大约1纳米/秒到大约1.5纳米/秒的范围内改变。
为了沉积氮化硅膜,双二乙基氨基硅烷(BDEAS)、二氯硅烷 (dichlorosilane,DCS)、硅烷等可以有利地单独或以前述两种或更多种的任何组合形式用作前体,。Ar、He等可以有利地单独或以前述两种或更多种的任何组合形式用作运载气体和稀释气体中的每一种。无需使用稀释气体并且可以完全消除(如下文所论述的实例1中)。N2、H2、NH3等可以有利地单独或以前述两种或更多种的任何组合形式用作反应气体。
在一些实施例中,可以通过PEALD,使用图17中所示出的工艺序列来执行氮化硅膜的沉积循环,所述沉积循环的一个循环在下表2中所示的条件下进行。
表2(数值是近似值)
在上文中,对于其它尺寸的衬底,可以应用从上文计算出的每厘米2瓦数。
在一些实施例中,氮化硅膜可以使用美国专利公开第2017/0062204A1 号,尤其是所述公开的图4A和4B以及对应文本中所公开的方法来加以沉积,其公开内容以全文引用的方式并入本文。
在一些实施例中,氧化硅膜的干式蚀刻(回蚀工艺)在下表3中所示的条件下进行。
表3(数值是近似值)
在上文中,对于其它尺寸的衬底,可以应用从上文计算出的每厘米2瓦数。
在一些实施例中,SiN膜的干式蚀刻(回蚀工艺)在下表4中所示的条件下进行。
表4(数值是近似值)
在上文中,对于其它尺寸的衬底,可以应用从上文计算出的每厘米2瓦数。
图案转移膜的第一层和第二层可以由不同组合物或相同组合物构成,只要所述第一层与第二层之间的膜应力差异得到恰当调整(例如,差异为大约 150MPa到大约800MPa,优选地大约200MPa到大约600MPa,在其中考虑每一层的膜应力与厚度乘积的差异的情况下还取决于每一层的厚度)即可,并且另外或替代地,只要所述第一层与第二层之间的干式蚀刻速率差异得到恰当调整(例如,差异为大约0.1纳米/秒到大约2纳米/秒,优选地大约0.2纳米 /秒到大约1.5纳米/秒,还取决于常用蚀刻条件)即可。举例来说,可以有利地选择以下组合(第一/第二层):SiN/SiO、SiO/SiN、SiO/SiO和SiN/SiN。当第一(内部)层是SiN并且第二(外部)层是SiO时,在回蚀步骤期间,在心轴顶部部分上,首先在设置用于SiO的蚀刻条件下蚀刻SiO,并且接着在设置用于SiN的蚀刻条件下蚀刻SiN。在以下情况下将蚀刻条件从用于SiO的那些蚀刻条件切换为用于SiN的那些蚀刻条件:(i)当处于心轴顶部部分处的SiO层的一部分变薄或几乎暴露时,(ii)当处于心轴顶部部分处的SiO层的一部分或大部分(除SiO层侧壁的顶部部分以外)得到去除并且SiN膜在心轴顶部部分处暴露时,或(iii)在介于上文(i)与(ii)之间的时机。当在设置用于SiN的蚀刻条件下,SiN层的干式蚀刻速率高于SiO层的干式蚀刻速率时,可以达成图12中所示出的平坦化作用。
在一些实施例中,芯材料的干式蚀刻(灰化或剥离工艺)在下表5中所示的条件下进行。
表5(数值是近似值)
在上文中,对于其它尺寸的衬底,可以应用从上文计算出的每厘米2瓦数。
沉积工艺、回蚀工艺和灰化工艺可在同一反应室或不同反应室中进行。当使用不同的反应室时,优选地,所述腔室通过薄片处理室与真空机器人连接,使得可以避免衬底暴露于空气中,并且可以增加处理量。
举例来说,工艺循环可以使用任何合适的设备来执行,包括图1中所示出的设备。图1是可用于本发明一些实施例中的PEALD设备的示意图,所述设备宜与被编程以进行下文所描述的序列的控制装置结合。在这个图中,通过提供一对并联的并且在反应室3的内部11(反应区)中面向彼此的导电平板电极(电容耦合式电极)4、2,将HRF功率(13.56MHz或27MHz)20 施加到一侧,并且使另一侧12电接地,来在电极之间激发等离子体。在下部平台2(下部电极)中提供温度调节器,并且将其上所放置的衬底1的温度保持在指定温度下恒定。上部电极4同样充当喷淋板,并且将反应气体(和稀有气体)和前体气体分别通过气体管线21和气体管线22引入到反应室3中,并且通过喷淋板4。另外,在反应室3中,提供具有排气管线7的环形管13,通过所述排气管线排出反应室3的内部11中的气体。另外,通过气体管线23将稀释气体引入到反应室3中。此外,安置在反应室3下方的转移室5具有密封气体管线24以将密封气体经由转移室5的内部16(转移区)引入到反应室3 的内部11中,在所述转移室5中提供用于隔离反应区与转移区的隔离板14(本图中省略闸阀,薄片通过所述闸阀转移到转移室5中或从所述转移室5转移)。转移室还具有排气管线6。在一些实施例中,在同一反应空间中进行多元素膜的沉积和表面处理,使得所有步骤都可以连续地进行而不将衬底暴露于空气或其它含氧气氛中。在一些实施例中,远程等离子体单元可以用于激发气体。在一些实施例中,可以使用切换非活性气体流动与前体气体流动的系统来以脉冲方式引入所述前体气体,而使反应室的压力基本上不波动。
在一些实施例中,可以使用双室反应器(用于加工彼此接近安置的薄片的两个区段或隔室),其中反应气体和稀有气体可以通过共用管线供应而前体气体通过非共用管线供应。
技术人员应了解,所述设备包括一个或多个被编程或以其它方式配置成使得本文其它地方所描述的沉积和反应器清洁工艺能够进行的控制器(未示出)。如本领域的技术人员应了解,控制器与各种电源、加热系统、泵、机器人装置以及反应器的气体流量控制器或阀连通。
参考以下工作实例来进一步解释本发明。然而,所述实例并不打算限制本发明。在未指定条件和/或结构的实例中,鉴于本公开,本领域的技术人员可以容易地按照常规实验提供此类条件和/或结构。另外,在一些实施例中,可以将具体实例中应用的数值修改至少±50%的范围,并且所述数值是近似值。
实例
参考实例1
将SiO膜和SiN膜各自通过PEALD沉积于Si衬底(Ф300mm)上,其中一个循环基于图16和图17中所示出的工艺序列使用图1中所示出的PEALD 设备来在下表6和7(沉积循环)中所示的条件下进行。
在从反应室取出每一衬底之后,测量每一膜的膜应力。结果展示于下表 8中。在将膜沉积于衬底上之前和之后,基于所述衬底的“翘曲(warp)”测量膜应力,其中所述“翘曲”由曲率半径表示,并且膜应力使用斯托尼等式 (Stoney equation)来计算。
表6(数值是近似值)
表7(数值是近似值)
表8(数值是近似值)
表8展示在沉积之后7天时测量的应力。然而,紧接在沉积之后的应力与在沉积之后7天时基本上相同,尽管应力随着时间的推移略微逐渐变化。逐渐变化是不显著的,并且可能由膜的水分吸收引起。如表8中所示,对于 SiO膜,通过添加循环B,膜应力变得更加压缩,并且对于SiN膜,通过延长 RF功率脉冲的持续时间,膜应力变得更加压缩。
比较实例1
通过使用图案化的SiARC(含硅的抗反射涂层)在Si衬底(Ф300mm) 上形成心轴图案(由非晶碳制成)来制备模板,其中图案化心轴的高度为90 nm,宽度为30nm并且间距为115nm。在模板上,通过PEALD在对应于参考实例1中所描述的SiO(n=0)(膜应力为-10.7)所用条件的条件下以95%的保形性使厚度为35nm的SiO膜沉积作为单层图案转移膜。图8中的(a) 展示SiO单层膜横截面视图的STEM照片。
接下来,使SiO单层膜在下表9中所示的条件下经历回蚀工艺,后接在与所述沉积工艺中相同的腔室中,在下表10中所示的条件下进行灰化工艺,以便形成间隔物。应注意,表9中所示的回蚀工艺还蚀刻SiARC膜。
表9(数值是近似值)
表10(数值是近似值)
图8中的(c)展示由SiO单层膜制成的间隔物的横截面视图的STEM照片。如图8中(c)中所示,通过芯去除(即,灰化工艺),间隔物朝向空白空间倾斜。间隔物的倾斜角度测量为大约2.2度。
比较实例2
制备模板,并且除了通过PEALD在对应于参考实例1中所描述的SiO (n=3)(膜应力为-169.3)所用条件的条件下以90%的保形性使厚度为35nm 的SiO膜沉积作为单层图案转移膜之外,以与比较实例1中基本上类似的方式将SiO膜沉积于所述模板上。图8中的(b)展示SiO单层膜横截面视图的 STEM照片。
接下来,使SiO单层膜和SiARC膜在与比较实例1中相同的条件下经历回蚀工艺,后接在与比较实例1中相同的条件下进行灰化工艺,以便形成间隔物。图8中的(d)展示由SiO单层膜制成的间隔物的横截面视图的STEM 照片。如图8中(d)中所示,通过芯去除(即,灰化工艺),间隔物朝向空白空间倾斜。间隔物的倾斜角度测量为大约2.9度。
实例1
制备模板,并且除了使SiO膜沉积作为SiO双层图案转移膜,所述膜由以与比较实例1(SiO(n=0))中基本上类似的方式沉积的厚度为20nm的内部SiO单层膜和以与比较实例2(SiO(n=3))中基本上类似的方式沉积的厚度为15nm的外部SiO单层膜构成之外,以与比较实例1或2中基本上类似的方式使SiO膜沉积。SiO双层图案转移膜的保形性为90%。图9中的(c)展示SiO双层膜横截面视图的STEM照片。即,厚度为20nm的内层是应力为 -10.7MPa(相对拉伸)的SiO单层膜,而厚度为15nm的外层是应力为-169.3 MPa(相对压缩)的SiO单层膜。
接下来,使SiO双层膜和SiARC膜在与比较实例1中相同的条件下经历回蚀工艺,后接在与比较实例1中相同的条件下进行灰化工艺,以便形成间隔物。图9中的(d)展示由SiO双层膜制成的间隔物的横截面视图的STEM 照片。与图9中(a)中所示的比较实例1中的间隔物(θ=2.2°)或图9中(b) 中所示的比较实例2中的间隔物(θ=2.9°)之一相比,如图9中(d)中所示,通过芯去除(即,灰化工艺),间隔物朝向空白空间倾斜更大。间隔物的倾斜角度测量为大约6.5度。此协同作用总结如下:
2.9°(外部)+2.2°(内部)→6.5°(总计)
实例2
制备模板,并且除了切换内层和外层之外,以与实例1中基本上类似的方式使SiO膜沉积。即,使SiO膜沉积作为SiO双层图案转移膜,所述膜由以与比较实例2(SiO(n=3))中基本上类似的方式沉积的厚度为20nm的内部SiO单层膜和以与比较实例1(SiO(n=0))中基本上类似的方式沉积的厚度为15nm的外部SiO单层膜构成。SiO双层图案转移膜的保形性为95%。图 9中的(e)展示SiO双层膜横截面视图的STEM照片。即,厚度为20nm的内层是应力为-169.3MPa(相对压缩)的SiO单层膜,而厚度为15nm的外层是应力为-10.7MPa(相对拉伸)的SiO单层膜。
接下来,使SiO双层膜和SiARC膜在与比较实例1中相同的条件下经历回蚀工艺,后接在与比较实例1中相同的条件下进行灰化工艺,以便形成间隔物。图9中的(f)展示由SiO双层膜制成的间隔物的横截面视图的STEM 照片。与图9中(a)中所示的比较实例1中的间隔物(θ=2.2°)或图9中(b) 中所示的比较实例2中的间隔物(θ=2.9°)之一相比,如图9中(f)中所示,经由芯去除(即,灰化工艺),间隔物朝向空白空间倾斜更小。间隔物的倾斜角度测量为大约0.8度。此逆向作用总结如下:
2.2°(外部)+2.9°(内部)→0.8°(总计)
如上文在实例1和2中所描述,通过操纵内层和外层的膜应力,可以形成具有所期望倾斜角度的间隔物。
实例3
制备模板,并且除了以与参考实例1中表8中SiO(n=2)所用基本上类似的方式代替实例1中SiO(n=3)所用的方式使内层沉积之外,以与实例1 中基本上类似的方式使SiO膜沉积。
接下来,将双层膜用作图案转移膜并使其在与比较实例1中相同的条件下经历回蚀工艺,后接在与比较实例1中相同的条件下进行灰化工艺,以便形成间隔物。获得由双层图案转移膜制成的间隔物的横截面视图的STEM照片,并且测量每一实例的间隔物的倾斜角度。图10的图展示倾斜角度与双层图案转移膜的外层与内层之间的膜应力差异之间的关系。
实例4和5
在实例4中,制备模板,以与参考实例1中表8中SiN(RF=3.3秒)所用基本上类似的方式使厚度为20nm的SiN膜沉积作为双层膜的内层,并且以与参考实例1中表8中SiO(n=0)所用基本上类似的方式使厚度为15nm的SiO 膜沉积作为双层膜的外层。所得双层图案转移膜的保形性为100%。
在实例5中,制备模板,并且除了SiN厚度是25nm并且SiO厚度是10 nm之外,以与实例4中基本上类似的方式使双层膜沉积(保形性为90%)。
接下来,除了RF功率施加的持续时间对实例4是14秒并且对实例5是 10秒之外,将在实例4和5中所获得的两层膜中的每一个都用作图案转移膜并使其在与比较实例1中相同的条件下经历用于蚀刻外部SiO层的回蚀工艺,直到内部SiN层的表面几乎暴露为止。之后,如下表11中所示,改变用于蚀刻内部SiN层的蚀刻条件。
表11(数值是近似值)
之后,除了RF功率施加的持续时间是9秒之外,在表9中所示的条件下进行SiARC层的蚀刻工艺。之后,在与比较实例1中相同的条件下进行灰化工艺,以便形成间隔物。获得由每一双层图案转移膜制成的间隔物的横截面视图的STEM照片,并且测量每一实例的间隔物的倾斜角度。图10的图展示倾斜角度与每一双层图案转移膜的外层与内层之间的膜应力差异之间的关系。
比较实例3
制备模板,并且除了n是2之外,以与比较实例1(n=0)基本上类似的方式使SiO单层图案转移膜沉积。
接下来,将单层膜用作图案转移膜并使其在与比较实例1中相同的条件下经历回蚀工艺,后接在与比较实例1中相同的条件下进行灰化工艺,以便形成间隔物。获得由单层图案转移膜制成的间隔物的横截面视图的STEM照片,并且测量间隔物的倾斜角度。图10的图展示单层图案转移膜(“比较实例 3”)的倾斜角度,其中假定膜内部一半与膜外部一半之间的差异为零。
比较实例4
制备模板,并且以与参考实例1中SiN(RF=3.3秒)基本上类似的方式使SiN单层图案转移膜沉积S。
接下来,将单层膜用作图案转移膜并使其在与比较实例1中相同的条件下经历回蚀工艺,后接在与比较实例1中相同的条件下进行灰化工艺,以便形成间隔物。获得由单层图案转移膜制成的间隔物的横截面视图的STEM照片,并且测量间隔物的倾斜角度。图10的图展示单层图案转移膜(“比较实例 4”)的倾斜角度,其中假定膜内部一半与膜外部一半之间的差异为零。
如图10中所示(其还绘制实例1和2以及比较实例1和2的结果曲线图),膜应力在负方向上的差异越大,间隔物在正方向上(向内倾斜)的倾斜角度变得越大,而膜应力在正方向上的差异越大,间隔物在负方向上(向外倾斜)的倾斜角度变得越大。因此,通过操纵内层和外层的膜应力,可以形成具有所期望倾斜角度(例如,范围为±2°或±1°)的间隔物。
实例6
制备模板,并且以与实例4中基本上类似的方式形成SiN/SiO双层膜。所得双层膜的保形性为100%。
接下来,将双层膜用作图案转移膜并使其经历回蚀工艺,后接以与实例 4中基本上类似的方式进行灰化工艺,以便形成间隔物。在表11中所示的蚀刻条件下,SiO层的干式蚀刻速率是0.4纳米/秒,而SiN层的干式蚀刻速率是 1.5纳米/秒。图11展示经过标注以展示“肩部损失”(圈出的部分)的横截面视图的STEM照片,其中(a)展示在比较实例1中形成的间隔物,并且(b) 展示在实例6中形成的间隔物。可以基于间隔物104的斜坡部分的高度H1来评估肩部损耗,所述高度H1在图11的(a)中是40nm,而间隔物108(由内部 SiN层108a和外部SiO层108b构成)的斜坡部分的高度H2是5nm。如图11 中所示,通过使用在内层与外层之间具有干式蚀刻速率差异的双层图案转移膜,间隔物的顶部变得基本上平坦。平坦化机制的理论被认为是在早先所描述的图12中所示出的理论。
实例7
在此实例中,确认图12中所示出的平坦化机制。图13展示横截面视图的STEM照片,其展示在步骤(a)到(f)中由双层膜形成具有平坦顶部的间隔物的步骤。在(a)中,制备模板,并且以与实例5中基本上类似的方式形成SiN/SiO双层膜。在(b)中,外部SiO层受到蚀刻,并且内部SiN层即将暴露。在内部SiN层几乎暴露之后(例如,紧接在(b)之后),将蚀刻条件从用于SiO(表9)的那些蚀刻条件切换为用于SiN(表11)的那些蚀刻条件。在进行通过离子轰击进行的干式蚀刻时,在(c)中去除外层和内层的顶部部分,并且由于内层与外层之间的干式蚀刻速率(DER)差异(在蚀刻条件下,内层的DER高于外层的DER),如在(c)中的圆中所示,外层的顶部变得尖锐。离子在内层的暴露表面上反射并且轰击外层的尖锐部分,由此如在(d) 中的圆中所示,去除外层的尖端并使外层的顶部平坦化,同时蚀刻内层的暴露表面。在(d)中,内层的顶部也得到平坦化。这可能是因为在使内层沉积时,内层的内部部分由于等离子体轰击的积聚而受到的损坏比内层的外部部分更大(内部部分暴露于等离子体中的时间比外部部分更长)。之后,进行灰化工艺以去除如(e)中所示的芯材料101。在(f)中展示所得间隔物的最终轮廓在此实例中,间隔物的倾斜角度是1.5度。如上文所描述,通过操纵内层与外层之间的干式蚀刻速率差异,可以使间隔物的顶部基本上平坦的,并且进一步地,通过操纵内层和外层的膜应力,可以形成具有所期望倾斜角度的间隔物。这些间隔物对于SDDP或SADP和任何其它半导体制造工艺是非常适用和有利的。
本领域的技术人员应理解,可以在不脱离本发明精神的情况下进行大量和各种修改。因此,应清楚地理解,本发明的形式仅是说明性的,并且并不打算限制本发明的范围。
Claims (20)
1.一种形成用于进行间隔物界定图案化的间隔物的方法,所述方法在包含以下的步骤中进行:(i)将图案转移膜沉积在模板上,所述模板具有由在下方层上形成的心轴图案化的表面;(ii)对整个上表面覆盖有所述图案转移膜的所述模板进行干式蚀刻,并且由此选择性地去除在所述心轴的顶部上形成的所述图案转移膜的顶部部分和在所述下方层上形成的所述图案转移膜的水平部分,同时留下所述心轴作为芯材料并且留下在所述心轴的侧壁上形成的所述图案转移膜的侧壁部分作为间隔物;以及(iii)对所述芯材料进行干式蚀刻,从而形成空白空间,所述模板由此具有由所述间隔物在所述下方层上图案化的表面,所述间隔物以第一倾斜角度朝向所述空白空间向内倾斜,所述第一倾斜角度被定义为如相对于竖直于所述空白空间的底部的线所测量的,每一侧壁部分的内表面的角度,其中倾斜角度为零表示完全竖直并且倾斜角度为正值表示向内倾斜,
其中所述改进包含:
在步骤(i)中,使在深度方向上具有不同膜应力的共形图案转移膜沉积作为所述图案转移膜,其中所述共形图案转移膜的下半部具有第一膜应力,并且所述共形图案转移膜的上半部具有第二膜应力,其中所述第一膜应力比所述第二膜应力更加压缩,由此在步骤(iii)中,所述间隔物以小于所述第一倾斜角度的第二倾斜角度朝向所述空白空间向内倾斜。
2.根据权利要求1所述的方法,其中所述共形图案转移膜由多个层构成。
3.根据权利要求1所述的方法,其中所述第二倾斜角度处于大约-1°到大约1°的范围内。
4.根据权利要求2所述的方法,其中所述多个层通过等离子体增强型原子层沉积(plasma-enhanced atomic layer deposition,PEALD)来加以沉积。
5.根据权利要求2所述的方法,其中所述多个层由第一层和沉积于所述第一层上的第二层构成,其中所述第一层的膜应力比所述第二层的膜应力更加压缩,并且所述第一层的厚度为所述第一层和所述第二层的总厚度的25%到75%。
6.根据权利要求2所述的方法,其中所述多个层由第一层和沉积于所述第一层上的第二层构成,其中所述第一层的膜应力比所述第二层的膜应力更加压缩,并且所述第一层的厚度等于或大于所述第二层的厚度。
7.根据权利要求5所述的方法,其中所述第一层的膜应力与所述第二层的膜应力之间的差异在大约150MPa与大约800MPa之间。
8.根据权利要求5所述的方法,其中所述第一层和所述第二层独立地由氧化硅或氮化硅构成。
9.根据权利要求8所述的方法,其中所述第一层由氮化硅构成并且所述第二层是氧化硅。
10.根据权利要求8所述的方法,其中所述第一层和所述第二层由氧化硅构成。
11.根据权利要求5所述的方法,其中所述第一层和所述第二层由不同组合物构成。
12.根据权利要求5所述的方法,其中所述第一层的抗干式蚀刻性比所述第二层更小。
13.根据权利要求12所述的方法,其中在所述第一层与所述第二层之间的抗干式蚀刻性差异使得在步骤(ii)中,每一间隔物的顶部通过抑制干式蚀刻对所述间隔物的肩部损失而变得基本上平坦。
14.根据权利要求1所述的方法,其中所述共形图案转移膜具有在深度方向上变化的膜应力,其中所述膜应力在向外方向上逐渐地增加。
15.一种形成用于进行间隔物界定图案化的间隔物的方法,所述方法在包含以下的步骤中进行:(i)将图案转移膜沉积在模板上,所述模板具有由在下方层上形成的心轴图案化的表面;(ii)对整个上表面覆盖有所述图案转移膜的所述模板进行干式蚀刻,并且由此选择性地去除在所述心轴的顶部上形成的所述图案转移膜的顶部部分和在所述下方层上形成的所述图案转移膜的水平部分,同时留下所述心轴作为芯材料并且留下在所述心轴的侧壁上形成的所述图案转移膜的侧壁部分作为间隔物;以及(iii)对所述芯材料进行干式蚀刻,从而形成空白空间,所述模板由此具有由所述间隔物在所述下方层上图案化的表面,所述间隔物以第一倾斜角度远离彼此向外倾斜,所述第一倾斜角度被定义为如相对于竖直于所述空白空间的底部的线所测量的,每一侧壁部分的内表面的角度,其中倾斜角度为零表示完全竖直并且倾斜角度为负值表示向外倾斜,
其中所述改进包含:
在步骤(i)中,使在深度方向上具有不同膜应力的共形图案转移膜沉积作为所述图案转移膜,其中所述共形图案转移膜的下半部具有第一膜应力,并且所述共形图案转移膜的上半部具有第二膜应力,其中所述第一膜应力比所述第二膜应力更加拉伸,由此在步骤(iii)中,间隔物以大于所述第一倾斜角度的倾斜角度远离彼此更小地向外倾斜。
16.一种形成用于间隔物界定多重图案化的竖直间隔物的方法,其包含:
(i)在反应空间中提供模板,所述模板具有由在下方层上形成的心轴图案化的表面;
(ii)在所述模板的整个图案化表面上沉积具有第一膜应力的第一共形图案转移膜,并且连续地沉积具有第二膜应力的第二共形图案转移膜,其中所述第一膜应力和所述第二膜应力不同;
(iii)对整个上表面覆盖有所述第一图案转移膜和所述第二图案转移膜的所述模板进行干式蚀刻,并且由此选择性地去除在所述心轴的顶部上形成的所述第一图案转移膜和所述第二图案转移膜的一部分以及所述第一图案转移膜和所述第二图案转移膜的水平部分,同时留下所述心轴作为芯材料并且留下所述第一图案转移膜和所述第二图案转移膜的竖直部分作为竖直间隔物;以及
(iv)对所述芯材料进行干式蚀刻,从而在所述竖直间隔物之间形成空白空间,所述模板由此具有由所述间隔物在所述下方层上图案化的表面。
17.根据权利要求16所述的方法,其进一步包含:
(v)测量所述竖直间隔物的倾斜角度,所述倾斜角度被定义为如相对于竖直于所述空白空间的底部的线所测量的,所述竖直间隔物中面向所述空白空间的内表面的角度,其中倾斜角度为零表示完全竖直并且倾斜角度为正值表示向内倾斜,后接判断所述倾斜角度是否处于目标范围内;
(vi)再次进行步骤(i)到(iv):(a)如果所述倾斜角度处于预设范围内,那么不进行改变以形成最终竖直间隔物;(b)如果所述倾斜角度大于所述预设范围,那么进行改变,其中使压缩应力以可测量程度高于所述第一膜应力的共形图案转移膜沉积作为步骤(ii)中的所述第一共形图案转移膜,和/或使拉伸应力以可测量程度高于所述第二膜应力的共形图案转移膜沉积作为步骤(ii)中的所述第二共形图案转移膜;或(c)如果所述倾斜角度小于所述预设范围,那么进行改变,其中使压缩应力以可测量程度低于所述第一膜应力的共形图案转移膜沉积作为步骤(ii)中的所述第一共形图案转移膜,和/或使拉伸应力以可测量程度低于所述第二膜应力的共形图案转移膜沉积作为步骤(ii)中的所述第二共形图案转移膜;以及
(vii)如果进行步骤(vi)中的(b)或(c),那么在增加(b)或(c)中所用的可测量程度之后,重复步骤(v)和(vi)。
18.根据权利要求17所述的方法,其中
所述第一共形图案转移膜具有第一抗干式蚀刻性,并且所述第二共形图案转移膜具有第二抗干式蚀刻性;并且
步骤(v)进一步包含判断所述竖直间隔物顶部是否是基本上平坦的,其中如果所述竖直间隔物的顶部不是基本上平坦的,那么:
在步骤(vi)中,使抗干式蚀刻性以可测量程度小于所述第一抗干式蚀刻性以及所述第二共形图案转移膜的第一共形图案转移膜沉积作为所述第一共形图案转移膜,和/或使抗干式蚀刻性以可测量程度高于所述第二抗干式蚀刻性以及所述第一共形图案转移膜的第二共形图案转移膜沉积作为所述第二共形图案转移膜;以及
在步骤(vii)中,在增加所述可测量程度之后,重复步骤(v)和(vi),直到所述竖直间隔物的顶部基本上平坦为止。
19.一种形成用于进行间隔物界定图案化的间隔物的方法,所述方法在包含以下的步骤中进行:(i)将图案转移膜沉积在模板上,所述模板具有由在下方层上形成的心轴图案化的表面;(ii)对整个上表面覆盖有所述图案转移膜的所述模板进行干式蚀刻,并且由此选择性地去除在所述心轴的顶部上形成的所述图案转移膜的顶部部分和在所述下方层上形成的所述图案转移膜的水平部分,同时留下所述心轴作为芯材料并且留下在所述心轴的侧壁上形成的所述图案转移膜的侧壁部分作为间隔物;以及(iii)对所述芯材料进行干式蚀刻,从而形成空白空间,所述模板由此具有由所述间隔物在所述下方层上图案化的表面,其中损失或蚀刻掉每一间隔物中面向所述空白空间的肩部部分,所述肩部部分是所述间隔物的顶部的外部拐角,从而形成从所述间隔物顶部的外侧向内侧倾斜的表面,
其中所述改进包含:
在步骤(i)中,使由包括第一层和沉积于所述第一层上的第二层的双层膜构成的共形图案转移膜沉积作为所述图案转移膜,其中所述第一层的抗干式蚀刻性比所述第二层小,其中在所述第一层与所述第二层之间的抗干式蚀刻性差异使得在步骤(iii)中,每一间隔物的顶部通过抑制干式蚀刻对所述间隔物的肩部损失而变得基本上平坦。
20.根据权利要求19所述的方法,其中所述第一层由氮化硅构成,并且所述第二层由氧化硅构成。
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CN110459465A (zh) * | 2019-08-30 | 2019-11-15 | 上海华力微电子有限公司 | 自对准双层图形的形成方法 |
CN110459465B (zh) * | 2019-08-30 | 2022-03-04 | 上海华力微电子有限公司 | 自对准双层图形的形成方法 |
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