KR101078509B1 - 박막 트랜지스터의 제조 방법 - Google Patents
박막 트랜지스터의 제조 방법 Download PDFInfo
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Abstract
Description
도 2는 펄스레이저 증착법으로 성막한 In-Ga-Zn-O계 아몰퍼스 산화물막의 전자캐리어 농도와 전자이동도의 관계를 나타내는 그래프이다.
도 3은 고주파 스퍼터법으로 성막한 In-Ga-Zn-O계 아몰퍼스 산화물막의 전기전도도와 성막중의 산소분압의 관계를 나타내는 그래프이다.
도 4는 펄스레이저 증착법에 의해 성막한 InGaO3(Zn1 - xMgxO)4 의 x의 값에 대한 전기전도도, 전자캐리어 농도, 전자이동도의 변화를 나타내는 그래프이다.
도 5는 탑 게이트형 TFT 소자 구조를 나타내는 모식도이다.
도 6은 탑 게이트형 TFT소자의 전류-전압 특성을 나타내는 그래프이다.
도 7은 펄스레이저 증착장치를 나타내는 모식도이다.
도 8은 스퍼터 제막(製膜)장치를 나타내는 모식도이다.
2: 아몰퍼스 산화물 채널층
3: 게이트 절연막
4: 게이트 단자
5: 드레인 단자
6: 소스 단자
Claims (2)
- 채널층, 게이트 절연막, 게이트 전극, 소스 전극 및 드레인 전극을 갖는 박막 트랜지스터의 채널층의 형성시에,
기판으로서, 글라스 기판, 플라스틱 기판 또는 플라스틱 필름을 이용하고,
기상성막방법에 의해
조성이, 식 InGaO3(ZnO)m(m은 6 미만의 자연수)로 나타나는 산화물의 다결정을 타겟으로 하여,
기판의 온도는 의도적으로 가온하지 않은 상태로,
전기 저항을 높이기 위한 불순물 이온을 의도적으로 박막에 첨가하지 않고,
산소 가스를 포함하는 분위기 중에서, 산소 분압의 크기를 제어하는 것에 의해,
실온에서의 전자이동도가 0.1㎠/(Vㆍ초) 이상과 동시에 전자캐리어 농도가 1018/㎤ 미만이며,
In, Ga, Zn 및 O의 원소로 구성되는 산화물이고, 결정화된 때의 조성이 InGaO3(ZnO)m(m은 6 미만의 자연수)로 표현되는, 반절연성이고 투명한 아몰퍼스 산화물 박막을 채널층으로서 성막하는 것에 의해,
온ㆍ오프 비가 103 보다 큰 트랜지스터 특성을 갖는
LCD 또는 유기 EL 디스플레이의 스위칭 소자용의 박막 트랜지스터를 형성하는 것을 특징으로 하는 박막 트랜지스터의 제조 방법. - 제1항에 있어서,
Al2O3, Y2O3, 또는 HfO2 중의 1종, 또는 그들 화합물을 적어도 2종 이상 포함하는 혼정 화합물을 이용하여 게이트 절연막을 형성하는 것을 특징으로 하는 박막 트랜지스터의 제조 방법.
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Non-Patent Citations (3)
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Applied Physics Letters Vol. 82, No. 7, pp. 1117-1119 (2003.02.17.)* |
M. Orita et al. Phil.Mag.B, 2001, Vol. 81, No. 5, pp. 501-515 (2001.05.01.)* |
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