JP5700626B2 - El表示装置 - Google Patents
El表示装置 Download PDFInfo
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- JP5700626B2 JP5700626B2 JP2010195545A JP2010195545A JP5700626B2 JP 5700626 B2 JP5700626 B2 JP 5700626B2 JP 2010195545 A JP2010195545 A JP 2010195545A JP 2010195545 A JP2010195545 A JP 2010195545A JP 5700626 B2 JP5700626 B2 JP 5700626B2
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- transistor
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- 239000004065 semiconductor Substances 0.000 claims description 45
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 67
- 239000010408 film Substances 0.000 description 41
- 238000000034 method Methods 0.000 description 20
- 238000004544 sputter deposition Methods 0.000 description 19
- 239000000758 substrate Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 12
- 229910007541 Zn O Inorganic materials 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000005401 electroluminescence Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- 238000006356 dehydrogenation reaction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2007—Display of intermediate tones
- G09G3/2074—Display of intermediate tones using sub-pixels
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
図1(A)には、本実施の形態における表示装置の簡略図について示したものである。図1(A)では、走査線駆動回路101、信号線駆動回路102、走査線103、信号線104、電源線105、及び表示部106について示している。なお走査線駆動回路101及び信号線駆動回路102を併せて、駆動回路107ともいう。又電源線105は電源回路108より延在して、各画素に所望の電源を供給している。また表示部106には、走査線103、信号線104、及び電源線105に環囲されるように複数の画素109が設けられている。なお走査線103の各配線をGR1〜GRn、GG1〜GGn、GB1〜GBnの3n本(nは自然数)とし、信号線104の本数をS1〜Smのm本(mは自然数)とし、電源線105の本数をV1〜Vmのm本(mは自然数)として説明する。従って、表示部106に画素109が(3n×m)個配置され、配線が(3n+m+m)本配置されることとなる。
本実施の形態では、上記実施の形態で説明した表示装置の画素の上面図、当該上面図に対応する回路図、及びその断面図の構成について説明する。
本実施形態においては、上記実施の形態で説明した表示装置を表示部に具備する電子機器の例について説明する。
102 信号線駆動回路
103 走査線
104 信号線
105 電源線
106 表示部
107 駆動回路
108 電源回路
109 画素
110 絵素
111 トランジスタ
112 トランジスタ
113 発光素子
601 信号線駆動回路
602 シフトレジスタ
603 ラッチ回路
604 ラッチ回路
605 D/A変換回路
701 走査線駆動回路
702 シフトレジスタ
703 バッファ回路
801 走査線
802 信号線
803 電源線
804 トランジスタ
805 トランジスタ
806 容量素子
807 発光素子
901 基板
902 下地膜
904 ゲート絶縁層
906 電極層
907 絶縁層
908 電極
909 隔壁
1001 走査線駆動回路
1002 信号線駆動回路
1003 走査線
1004 信号線
1005 電源線
1006 表示部
1007 駆動回路
1008 電源回路
1009 画素
1010 絵素
1011 選択トランジスタ
1012 駆動トランジスタ
1013 発光素子
109B 画素
109G 画素
109R 画素
111R トランジスタ
111G トランジスタ
111B トランジスタ
112R トランジスタ
112G トランジスタ
112B トランジスタ
113R 発光素子
113G 発光素子
113B 発光素子
1211 筐体
1212 支持台
1213 表示部
1231 本体
1232 表示部
1233 受像部
1234 操作キー
1235 外部接続ポート
1236 シャッターボタン
1251 本体
1252 筐体
1253 表示部
1254 キーボード
1255 外部接続ポート
1256 ポインティングデバイス
201A 走査線駆動回路
201B 走査線駆動回路
903A ゲート電極層
903B ゲート電極層
905A 酸化物半導体層
905B 酸化物半導体層
1009B 画素
1009G 画素
1009R 画素
Claims (1)
- n行m列(m>n)の画素を有するEL表示装置であって、
前記画素は、第1のトランジスタと第2のトランジスタと、走査線と、信号線と、電源線と、を有し、
前記第1のトランジスタは、ゲートに前記走査線が電気的に接続され、ソースまたはドレインの一方に前記信号線が電気的に接続され、ソースまたはドレインの他方に前記第2のトランジスタのゲートが電気的に接続され、
前記第2のトランジスタは、ドレインに前記電源線が電気的に接続され、ソースにEL素子が電気的に接続され、
前記走査線は行方向に延伸され、
前記信号線と前記電源線は列方向に延伸され、
前記第1のトランジスタ及び第2のトランジスタの半導体層は、酸化物半導体層で構成され、
前記酸化物半導体層は窒素雰囲気下において400℃以上750℃以下で加熱された後、大気に触れさせることなく加熱温度から100℃以上温度が低下するまで冷却することによって、脱水化または脱水素化され、
前記酸化物半導体層は結晶化率が80%以上であることを特徴とするEL表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010195545A JP5700626B2 (ja) | 2009-09-04 | 2010-09-01 | El表示装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009205132 | 2009-09-04 | ||
JP2009205132 | 2009-09-04 | ||
JP2010195545A JP5700626B2 (ja) | 2009-09-04 | 2010-09-01 | El表示装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015025298A Division JP5922813B2 (ja) | 2009-09-04 | 2015-02-12 | 表示装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011076078A JP2011076078A (ja) | 2011-04-14 |
JP2011076078A5 JP2011076078A5 (ja) | 2013-08-29 |
JP5700626B2 true JP5700626B2 (ja) | 2015-04-15 |
Family
ID=43647346
Family Applications (8)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010195545A Expired - Fee Related JP5700626B2 (ja) | 2009-09-04 | 2010-09-01 | El表示装置 |
JP2015025298A Active JP5922813B2 (ja) | 2009-09-04 | 2015-02-12 | 表示装置の作製方法 |
JP2016077034A Active JP6208800B2 (ja) | 2009-09-04 | 2016-04-07 | 表示装置の作製方法 |
JP2017171675A Active JP6460607B2 (ja) | 2009-09-04 | 2017-09-07 | 表示装置の作製方法 |
JP2018240409A Active JP6626952B2 (ja) | 2009-09-04 | 2018-12-24 | 表示装置の作製方法 |
JP2019217980A Active JP6805322B2 (ja) | 2009-09-04 | 2019-12-02 | 表示装置の作製方法 |
JP2020200848A Withdrawn JP2021048409A (ja) | 2009-09-04 | 2020-12-03 | 半導体装置の作製方法 |
JP2022136621A Pending JP2022184846A (ja) | 2009-09-04 | 2022-08-30 | 表示装置 |
Family Applications After (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015025298A Active JP5922813B2 (ja) | 2009-09-04 | 2015-02-12 | 表示装置の作製方法 |
JP2016077034A Active JP6208800B2 (ja) | 2009-09-04 | 2016-04-07 | 表示装置の作製方法 |
JP2017171675A Active JP6460607B2 (ja) | 2009-09-04 | 2017-09-07 | 表示装置の作製方法 |
JP2018240409A Active JP6626952B2 (ja) | 2009-09-04 | 2018-12-24 | 表示装置の作製方法 |
JP2019217980A Active JP6805322B2 (ja) | 2009-09-04 | 2019-12-02 | 表示装置の作製方法 |
JP2020200848A Withdrawn JP2021048409A (ja) | 2009-09-04 | 2020-12-03 | 半導体装置の作製方法 |
JP2022136621A Pending JP2022184846A (ja) | 2009-09-04 | 2022-08-30 | 表示装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9805641B2 (ja) |
JP (8) | JP5700626B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103718233B (zh) * | 2011-05-13 | 2017-05-17 | 株式会社半导体能源研究所 | 显示装置 |
US9818765B2 (en) | 2013-08-26 | 2017-11-14 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
US9818344B2 (en) | 2015-12-04 | 2017-11-14 | Apple Inc. | Display with light-emitting diodes |
Family Cites Families (130)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
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JP5922813B2 (ja) | 2016-05-24 |
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US9805641B2 (en) | 2017-10-31 |
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