WO2008126879A1 - Light-emitting apparatus and production method thereof - Google Patents

Light-emitting apparatus and production method thereof Download PDF

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Publication number
WO2008126879A1
WO2008126879A1 PCT/JP2008/057047 JP2008057047W WO2008126879A1 WO 2008126879 A1 WO2008126879 A1 WO 2008126879A1 JP 2008057047 W JP2008057047 W JP 2008057047W WO 2008126879 A1 WO2008126879 A1 WO 2008126879A1
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Prior art keywords
layer
forming
heat treatment
field effect
effect transistor
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PCT/JP2008/057047
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French (fr)
Inventor
Tomohiro Watanabe
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Canon Kabushiki Kaisha
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Priority to JP2007-101638 priority Critical
Priority to JP2007101638 priority
Priority to JP2008036044A priority patent/JP5197058B2/en
Priority to JP2008-036044 priority
Application filed by Canon Kabushiki Kaisha filed Critical Canon Kabushiki Kaisha
Priority claimed from US12/530,638 external-priority patent/US8785240B2/en
Publication of WO2008126879A1 publication Critical patent/WO2008126879A1/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • H01L27/326Active matrix displays special geometry or disposition of pixel-elements
    • H01L27/3262Active matrix displays special geometry or disposition of pixel-elements of TFT
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5237Passivation; Containers; Encapsulation, e.g. against humidity
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof

Abstract

Provided is a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor including an oxide semiconductor (4) containing at least one element selected from In and Zn, the method including the steps of : forming a field effect transistor on a substrate (1); forming an insulating layer(7); forming a lower electrode (8) on the insulating layer; forming an organic layer (10) for constituting an organic EL device on the lower electrode; forming an upper electrode (11) on the organic layer; and after the step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer, performing heat treatment such that an amount of a component that is desorbable as H20 from the field effect transistor during the step of forming the organic layer is less than 10-5 g/m2.

Description

DESCRIPTION

LIGHT-EMITTING APPARATUS AND PRODUCTION METHOD THEREOF

TECHNICAL FIELD

The present invention relates to a light-emitting apparatus and a method of producing the apparatus, in particular, a light-emitting apparatus using a field effect transistor as a switching device and typically obtained by stacking an organic EL device on the same substrate as the substrate on which the transistor is formed, and a method of producing the apparatus.

BACKGROUND ART The so-called active matrix system in which field effect transistors formed on a substrate are used has been adopted as one system according to which an organic EL panel is driven.

In this system, because the luminance of an organic EL device is controlled with a current, a field effect transistor the mobility of which is so large that a sufficient current can be flowed therein is suitably used.

At present, for example, an amorphous Si semiconductor, a polycrystalline Si semiconductor, or an organic semiconductor has been used in a field effect transistor. However, the amorphous Si semiconductor and the organic semiconductor each have a low mobility. In addition, the polycrystalline Si semiconductor is difficult to increase the area thereof and necessitates a high cost. Further, the polycrystalline Si semiconductor has grain boundaries, and the characteristics of a device formed thereof will vary owing to carrier scattering, so that a circuit for suppressing the luminance unevenness of the device is separately required to be provided, and the requirement is responsible for an additional increase in the production cost and a reduction in the aperture ratio of the device.

Meanwhile, a system using a conductive oxide as a main component such as a Zn-O system (oxide containing at least Zn) has been vigorously developed as a material for the semiconductor layer of a field effect transistor in recent years (Applied Physics Letters, Vol. 82, pp. 733-735 (2003)).

An oxide semiconductor has a higher mobility than that of the amorphous Si semiconductor, can be formed into a film at a low temperature, and is available at a low cost. Attempts have been made to develop a flexible transistor by forming the oxide semiconductor on a flexible substrate. In addition, because the oxide semiconductor is transparent to visible light, an improvement in aperture ratio of a device obtained by combining the oxide semiconductor and a light-emitting device can be achieved. The development of an organic EL panel according to an active matrix system obtained by combining a TFT (hereinafter referred to as "TOS-TFT") using a transparent oxide semiconductor (hereinafter referred to as "TOS") and an organic EL device has been desired.

Further, an In-Ga-Zn-O system (oxide containing In, Ga, and Zn) (Nature, Vol. 432, pp. 488-492 (2004)) and a Zn-Sn-O system (oxide containing Zn and Sn) are each an amorphous TOS-TFT. In addition, because the amorphous TOS-TFT is theoretically free of carrier scattering which is of concern in a polycrystalline semiconductor, a device using such an amorphous TOS-TFT is expected to have a further increased aperture ratio.

Advanced Materials, Vol. 18, pp. 738-741 (2006) by P. Gorrn et al. discloses a technology for stacking a TOS-TFT of a Zn-Sn-O system (oxide containing Zn and Sn) and an organic EL device on the same substrate. On the other hand, it has been known that the lifetime of an organic EL device is remarkably reduced owing to the presence of even a trace amount of moisture. In view of the foregoing, the adsorption of moisture is suppressed by covering the entirety of the organic EL device with, for example, a resin or by sealing the device in a layer provided with a moisture adsorbent. Reductions in cost for the production of an organic EL panel and in thickness of the organic EL panel by the sealing of the organic EL device with a solid thin film as a water vapor barrier film will be required to be realized in the future. U.S. Pat. No. 6,633,121 discloses an organic EL display apparatus in which the water content of each of an organic light-emitting medium, an interlayer insulating film, a color filter, a fluorescent medium, and a planarizing layer is set to 0.05 wt% or less to suppress the generation of a non-light-emitting region, and a method of producing the apparatus.

The production method involving reducing the water content includes performing a dehydration step before and after the formation of an organic light- emitting medium, or alternatively either before or after the formation of the organic light-emitting medium.

The techniques for the dehydration step includes, for example, dew point adjustment, vacuum degree adjustment, inert gas introduction, heat treatment, or a combination of thereof.

The temperature for the heat treatment is desirably 600C or more at which the dehydration efficiency is not remarkably reduced, and is desirably 3000C or less at which an organic film such as an organic light-emitting medium or a fluorescent medium is not thermally damaged. The period of time for which the heat treatment is performed is influenced by the area and film thickness of a color filter, a fluorescent medium, an interlayer insulating film, or the like but is preferably within the range of 10 minutes to 12 hours. The reason for this is that a dehydration time of less than 10 minutes results in an insufficient dehydration treatment, so that it may be difficult to reduce the water content of an organic light-emitting medium after the assembly to 0.05 wt% or less, and further that a dehydration time in excess of 12 hours merely lengthens the time period for the heat treatment and the effect exerted by more than 12 hours of heat treatment may be not different from that exerted by 12 hours or less of heat treatment.

In view of the foregoing, the dehydration time is more preferably within the range of 30 minutes to 10 hours, or still more preferably within the range of 1 to 6 hours. In addition, Japanese Patent Application Laid- Open No. 2006-080495 discloses a technology for removing moisture adsorbing to the inside or surface of an insulating film by performing a heat treatment under the atmospheric pressure at 200 to 3500C and under a reduced pressure at 200 to 4000C, preferably 250 to 3500C before the formation of an organic layer. Polycrystalline Si is used for a semiconductor layer. In the case where an insulating film is used as a water vapor barrier film, when a resin film having low heat resistance or the like is used as a flexible substrate or when an attempt to reduce the cost for a production process is to be made, the water vapor barrier film needs to be formed by a lower temperature process .

However, the water vapor barrier property of an insulating film tends to be reduced owing to the film formation at the lower temperature, with the result that a sufficient effect is hardly obtained. The reason is considered that when film formation is performed by a low temperature process (for example, 3000C or less), it becomes difficult to form a dense film.

In addition, because the respective constituent layers need to be formed at a low temperature of 3000C or less owing to constraints by the heat resistance of the substrate, the amount of moisture adsorbing to the inside or surface of each constituent layer of a TFT becomes large as compared to that in the case where the layer is formed at a high temperature.

On the other hand, an oxide generally has higher polarization property than that of amorphous Si or polycrystalline Si, so that there is a tendency for the oxide to be extremely liable to adsorb moisture. The tendency becomes remarkable when the film formation is performed at a low temperature. For example, an element showing high polarization property when turned into an oxide like Indium (In) used in the oxide semiconductor in the present invention shows a strong tendency to have high hygroscopic property, so that the amount of moisture adsorbing to the surface thereof is extremely large as compared to that in the case of an amorphous Si semiconductor or a polycrystalline Si semiconductor. Further, when the semiconductor layer is formed of an oxide, the layer contains a large amount of OH groups in the film itself, in addition to the component as water molecules adsorbing to its surface. Because the OH groups can be desorbed as water molecules at the time of heating, merely reducing the content contained in the form of water molecules in the film is not sufficient for the prevention of the degradation of an organic EL device. That is, in the case of an oxide semiconductor layer, it is difficult to prevent the degradation of an organic EL device effectively by merely managing the amount of moisture

(component existing in the form of H2O in the layer) in the layer.

U.S. Pat. No. 6,633,121 discloses a technology for suppressing the generation of a non-light-emitting region in an organic EL display apparatus by setting the water content in each of an organic light-emitting medium, an interlayer insulating film, a color filter, a fluorescent medium, and a planarizing layer to 0.05 wt% or less. However, when an oxide semiconductor is used as the semiconductor layer of a field effect TFT as is the case with the present invention, a large amount of a component is desorbed or diffused as H2O from the semiconductor layer after the formation of a device, which poses a problem in the longer term. That is, in the case of a film such as of an oxide semiconductor in which OH groups or the like are present, the groups can be desorbed in the form of H2O at the time of the desorption, so that even when the amount of a component existing in the form of H2O in the film is small, the groups may substantially have adverse effects comparable to those in the case where the film contains a large amount of moisture in itself. Therefore, it is considered that even when the production method disclosed in U.S. Pat. No. 6,633,121 is applied to an organic EL display apparatus having an oxide semiconductor, because a component that can be desorbed as H2O with the elapse of time may be present in the film, the application is insufficient to prevent the degradation of the organic EL device over a long period of time.

A possible method of preventing the degradation of an organic EL device due to a component that can be desorbed as H2O from a TFT using an oxide semiconductor (hereinafter referred to as "OS-TFT") at the time of heating of the OS-TFT is a method involving forming a film having higher water vapor barrier property between the OS-TFT and the organic EL device.

A water vapor permeability required for a water vapor barrier film is said to be less than 10~5 g/m2/day.

Examples of the film that can satisfy the above- mentioned requirement include a multilayer film obtained by stacking an acrylic resin and aluminum oxide or silicon oxide several times, or a film obtained by alternately stacking SiNx formed into a film by plasma CVD and a plasma-polymerized CNx: H film. However, the films are each formed by a complicated film formation process and necessitate a high production cost. Accordingly, in order to form an OS-TFT and an organic EL device (typically on the same substrate) by a low temperature process and to give a product having a sufficient lifetime, provision of a costly water vapor barrier layer has been inevitable.

DISCLOSURE OF THE INVENTION

An object of the present invention is to form a display apparatus or the like which has an OS-TFT as a field effect transistor for driving an organic EL device (typically, the device and the OS-TFT are disposed on the same substrate) by a low temperature process, thereby suppressing the degradation of the organic layer at a low cost.

With a view to solving the above-mentioned problems, in the present invention, in a step of forming an organic layer for constituting an organic EL device or a step subsequent thereto, by preventing the desorption and diffusion of moisture from a part which has been formed up to then, the degradation of the organic layer is prevented.

That is, a field effect transistor, an insulating layer, a lower electrode, and a device separation film which have been formed before the formation of the organic layer are treated with heat, so that the remaining amount of a component to be thereafter desorbed and diffused as H2O is reduced in advance, whereby the degradation of the organic layer is prevented.

Specifically, according to the present invention, there is provided a method of producing a light- emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor including an oxide semiconductor containing at least one element selected from In and Zn, the method including the steps of: forming a field effect transistor on a substrate; forming an insulating layer; forming a lower electrode on the insulating layer; forming an organic layer for constituting an organic EL device on the lower electrode; forming an upper electrode on the organic layer; and after a step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer, performing heat treatment such that an amount of a component that is desorbable (or releasable) as H2O from the field effect transistor during the step of forming the organic layer is less than ICT5 g/m2.

Further, the present invention is characterized in that the heat treatment is performed successively after the step of forming the semiconductor layer of the field effect transistor.

Moreover, the present invention is characterized in that the heat treatment is performed successively after the step of forming the field effect transistor. In addition, the present invention is characterized in that the heat treatment is performed after the step of forming the insulating layer and before the step of forming the organic layer for constituting the organic EL device. Further, the present invention is characterized in that the field effect transistor includes a source electrode, a drain electrode, the semiconductor layer, a gate electrode, and a gate insulating film; and each of the source electrode, the drain electrode, the semiconductor layer, the gate insulating film, and the gate electrode is formed at a temperature equal to or less than 3000C. Moreover, the present invention provides a light- emitting apparatus, in which the semiconductor layer includes an oxide containing at least one of In and Zn.

In addition, the present invention provides a light-emitting apparatus, in which the semiconductor layer includes an oxide containing In and Zn, and at least a part of the layer is amorphous.

Furthermore, the present invention provides a light-emitting apparatus, in which then amount of a component that is present in the semiconductor layer after the heat treatment step and is desorbable as H2O when subjected to heat treatment up to 6000C is less than 3.0 * 10"3 g/m2.

According to the present invention, when a light- emitting apparatus is produced through a low temperature process by stacking an organic EL device on the same substrate as the substrate on which an OS-TFT is formed, the degradation of an organic layer can be suppressed at a low cost. Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings .

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view illustrating a light-emitting apparatus having OS-TFTs and organic EL devices formed on the same substrate as an embodiment of the present invention.

FIG. 2 is a flow chart illustrating a method of producing a light-emitting apparatus as an embodiment of the present invention.

FIG. 3 is a graphical representation illustrating temperature programmed desorption curves of a transparent oxide semiconductor as an embodiment of the present invention. FIG. 4 is a graphical representation illustrating a relationship between the heat treatment temperature for a transparent oxide semiconductor and the remaining amount of a component that can be desorbed as H2O as an embodiment of the present invention. FIG. 5 is a cross-sectional view illustrating a production method of a light-emitting apparatus having OS-TFTs and organic EL devices formed on the same substrate as an embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

The present inventors have conducted extensive studies on the relationship between the electrical characteristics of an OS-TFT and the amount of a component that can be desorbed as H2O from an oxide semiconductor layer of an OS-TFT at the time of heating of the OS-TFT and have confirmed that the OS-TFT operates satisfactorily in a state where the layer contains a some amount (1.0 molecule/nm3 to 1.4 molecules/nm3) of a component that can be desorbed as H2O.

Meanwhile, it has been well known that moisture is responsible for the degradation of an organic EL device, so that a TFT for driving an organic EL device preferably contains a smaller amount of a component that can be desorbed as H2O at the time of heating. In view of such circumstances, the present inventors have conducted extensive studies on the electrical characteristics of an OS-TFT when the amount of a component that can be desorbed as H2O from an oxide semiconductor layer at the time of heating is reduced and have found that such characteristics as to be sufficient for driving an organic EL device can be obtained thereby. In view of the foregoing, the present inventors have accomplished the present invention as a treatment method which is necessary for using an OS-TFT as a TFT for driving an organic EL device.

Hereinafter, the best mode for carrying out the present invention will be described with reference to the attached drawings. (Embodiment 1) In this embodiment, a description is made of a case where OS-TFTs of an amorphous In-Ga-Zn-O system are used as switching devices, and an organic EL display panel according to a typical constitution of the present invention, that is, a constitution in which organic EL devices are stacked on the same substrate as the substrate on which the OS-TFTs are formed is produced. The term "In-Ga-Zn-O system" herein employed refers to an oxide-based material containing at least In, Ga, and Zn.

FIG. 1 is a cross-sectional view illustrating the constitution of a light-emitting apparatus as an embodiment of the present invention.

In FIG. 1, reference numeral 1 denotes a glass substrate as a substrate; 2, a gate electrode; 3, a gate insulating layer; 4, an oxide semiconductor layer (semiconductor layer) ; 5, a drain electrode; 6, a source electrode; 7, an insulating layer; 8, a transparent anode as a lower electrode; 9, a device separation film that can be provided as needed; 10, an organic layer; 11, a metal cathode as an upper electrode; and 12, an insulating layer used as a passivation film.

First, the source electrode 5 and the drain electrode 6 are directly connected to the oxide semiconductor layer (semiconductor layer) 4, and are controlled by the gate electrode 2 through the insulating layer 3. The organic layer 10 is connected to the drain electrode 6 through the lower transparent anode 8 and a contact hole. The drain electrode 5 or source electrode 6 of the OS-TFT and the electrode of the transparent anode 8 are electrically connected to each other.

The organic layer 10 is constituted of an electron-transporting layer, a light-emitting layer, and a hole-transporting layer, but the constitution of the layer is by no means limited to the foregoing.

The transparent anode 8 is provided below the organic layer 10, and when the OS-TFT is in an ON state, a voltage is applied to the organic layer 10, whereby the layer emits light.

The metal cathode 11 can be changed depending on the purpose of a light-emitting device to be used. For example, when the' light-emitting device is of a bottom emission type, a metal electrode is used, and, when light is emitted from the both surfaces of the device, a transparent electrode may be used.

From the viewpoint of increasing the aperture ratio of the device, an insulating substrate, electrodes, an insulating layer, a semiconductor layer, and the like are desirably transparent to the wavelength of visible light.

An oxide containing In, Ga, Zn, Sn, or the like can be formed into any one of an insulator, a semiconductor, and a conductor by changing the composition and the film forming conditions such as oxygen partial pressure. It is also preferable that a transparent protective film formed of an oxide or an oxynitride be provided between the OS-TFT and the organic layer as needed in order that the OS-TFT may be protected from damage during a process for the formation of the organic layer.

Next, a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device in the present invention will be described with reference to FIG. 2.

First, a field effect transistor is formed on a substrate (Step Sl) . In the case of a bottom gate, top contact transistor, a gate electrode 2 is formed on the substrate 1 by patterning before a gate insulating layer 3 is formed. Next, an oxide semiconductor layer 4 is formed by patterning.

Here, when a process after the formation of the oxide semiconductor layer 4 and before the formation of the organic layer for forming the organic EL device is a dry process, a heat treatment for dehydration is preferably performed successively after the formation of the oxide semiconductor layer 4. The term "successively" as herein employed is not necessarily intended to mean that two steps are consecutive to each other without any instantaneous time interval therebetween but is intended to also mean that the heat treatment for dehydration is performed without through any other step after the step of forming the oxide semiconductor layer 4. Therefore, a standby time after the step of forming the oxide semiconductor layer 4 and before the step of performing the heat treatment for dehydration may be present to such an extent that the characteristics of the oxide semiconductor layer 4 are adversely affected.

As described above, the oxide semiconductor layer 4 containing metal ions having high polarization property tends to be liable to adsorb moisture, and moisture adsorbing to the surface of the layer is diffused in the form of OH group or the like into the layer.

Therefore, in the case where a wet process is present after the formation of the oxide semiconductor layer 4, the layer will adsorb moisture again even when the layer has been once dehydrated. Accordingly, when the method of producing the light-emitting apparatus passes through a process by passing through which the layer may adsorb moisture again, it is preferred that the heat treatment for dehydration according to the present invention is performed before the method proceeds to the next process.

In addition, when only dry processes are present during the period of time after the completion of the formation of the oxide semiconductor layer 4 and before the initiation of the formation of the organic layer in Step S4 to be described later, there are many cases where the oxide semiconductor layer 4 may become a layer that has adsorbed moisture to the largest extent. In such cases as well, it is preferred that a heat treatment for dehydration is performed before the method proceeds to the next process.

Next, the drain electrode 5 and the source electrode 6 are each formed by patterning, whereby the field effect transistor is completed. Next, an insulating layer 7 is formed (Step S2), and a contact hole to the source electrode 6 is formed. After that, a transparent electrode 8 is formed (Step S3), and is joined to the source electrode 6.

Here, when no heat treatment for dehydration is performed immediately after the formation of the oxide semiconductor layer 4, and a heat treatment for dehydration is performed only immediately after the formation of the transparent electrode 8, it is preferred that the heat treatment is performed at 1500C or more for 30 minutes or more.

In addition, when a device separation film 9 is formed after the formation of the transparent electrode 8, it is preferred that a heat treatment for dehydration is performed at 1500C or more for 30 minutes or more immediately after the formation of the device separation film 9.

Next, an organic layer 10 for forming the organic EL device is formed on the transparent electrode 8 (Step S4), and a metal cathode 11 is formed on the organic layer 10 (Step S5) .

The heat treatment for dehydration does not depend on an atmosphere or a pressure but depends on the conditions at the time of the film formation, so that not only an inert atmosphere such as dry air, nitrogen gas, or a rare gas but also an atmosphere such as oxygen can be used for the treatment. The heating temperature at the time of the heat treatment according to the present invention is 1500C to 3000C, or preferably 200°C to 300°C. In addition, when the temperature is not kept constant but increased, the technical effect of the present invention can be obtained, for example, when the temperature is increased at a rate of 60°C/min with an infrared lamp to reach 1500C.

In any case, when after the heat treatment has been performed, the organic layer is formed at a temperature higher than the temperature of the heat treatment, the effect of the previously performed heat treatment is lost because the amount of a component to be desorbed as H2O from the field effect transistor becomes 10~5 g/m2 or more. Therefore, the temperature at which the heat treatment is performed in the present invention must be equal to or higher than the temperature at which a heat treatment at the time of the formation of the organic layer is performed later.

In any case, such a heat treatment that the amount of a component that can be desorbed as H2O from the field effect transistor becomes less than 10~5 g/m2 needs to be performed after the step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer (Step S4).

Hereinafter, each component will be described in more detail. (Substrate)

A glass substrate is generally used in a light- emitting device. A substrate having a surface with such flatness that the arithmetic mean roughness (Ra) is several nanometers or less can be suitably used in this embodiment.

Since the OS-TFT used in the present invention can be formed at a low temperature, a resin substrate which is difficult to use in an active matrix system using a-Si TFTs that generally require a high temperature process can be used.

In this case, in general, a process for the production of a light-emitting layer using such a resin substrate is mainly performed at a temperature up to about 2000C. A temperature up to about 3000C is applicable to the process depending on the conditions (for example, conditions under which substantially no damage is given to the resin substrate, such as a heat treatment for a short period of time) .

The adoption of the resin substrate results in a light-emitting device which has a light weight and which hardly breaks, and the device can be bent to some extent .

In this case, each of the source electrode, the drain electrode, the gate insulating film, the gate electrode, and the semiconductor layer needs to be formed at a temperature from room temperature up to

3000C, desirably a temperature from room temperature up to 2000C.

A transparent substrate can be more suitably employed because the aperture ratio of the device increases.

Of course, a semiconductor substrate formed of, for example, Si or a ceramic substrate as well as any such substrate as described above can be utilized. A substrate obtained by providing an insulating layer on a metal substrate can also be utilized as long as the substrate has a flat surface. (Field effect transistor)

In this embodiment, a semiconductor of an In-Zn-O system or a system obtained by adding Ga to the foregoing system is preferably used in a semiconductor layer of a field effect transistor.

A component of this composition of the layer can be replaced with Mg or the like, or Mg or the like can be added to the composition. In such case, however, an electron carrier concentration of less than 1018/cm3 and an electron mobility of 1 cm2/ (V- sec) or more needs to be achieved.

According to the findings of the present inventors, when a semiconductor of an In-Ga-Zn-O system is used in a semiconductor layer, the characteristics have been observed in which the moisture inside the layer is hardly desorbed up to a temperature at which heat treatment has been performed once.

FIG. 3 is a graphical representation illustrating the results of the temperature programmed desorption analysis of a semiconductor film of an In-Ga-Zn-O system formed at room temperature.

In FIG. 3, the ordinate indicates the desorption amount of H2O molecules, and the abscissa indicates the temperature of a thermocouple brought into contact with the surface of the semiconductor film of the In-Ga-Zn-O system during the temperature programmed desorption analysis, and the temperature indicated by an arrow represents the heat treatment temperature.

- In the case of a sample not subjected to a heat treatment, a peak of the desorption amount of moisture adsorbing to the surface of the film is observed at or near 1100C. On the other hand, in the case of a sample subjected to a heat treatment, it can be found that the desorption of moisture is significantly reduced at a temperature equal to or less than the temperature at which the heat treatment was performed. Therefore, the desorption amount of moisture from the semiconductor film of the In-Ga-Zn-O system can be' controlled by a heat treatment. When it is required to reduce the desorption amount of moisture from the semiconductor film of the In-Ga-Zn-O system during the process for the formation of the organic layer, moisture is desorbed from the semiconductor film of the In-Ga-Zn-O system by heat-treating the film before the formation of the organic layer. As the heat treatment conditions for releasing moisture, by employing a temperature higher than the process temperature used in the process for the formation of the organic layer, the desorption of moisture from the semiconductor film of the In-Ga- Zn-O system can be effectively suppressed.

The higher the heat treatment temperature, the larger the extent to which the desorption amount of moisture from the semiconductor film of the In-Ga-Zn-O system is reduced. However, because the heat treatment involves changes in the quality and carrier concentration of the semiconductor film of the In-Ga- Zn-O system, a heat treatment temperature up to about 3000C is preferable.

FIG. 4 is a graphical representation illustrating the relationship between a heat treatment temperature and the amount of a component which remains in the semiconductor film of the In-Ga-Zn-O system after the heat treatment and can be desorbed as H2O. The point indicated at the leftmost end in the graph corresponds to a sample not subjected to a heat treatment. The term "a component which remains in the semiconductor film of the In-Ga-Zn-O system after the heat treatment and can be desorbed as H2O" herein employed refers to a component that still remains in the semiconductor film even after the heat treatment for dehydration has been performed. The term is intended to encompass not only a component which is present in the form of H2O in the semiconductor film but also a component which is present in the form of, for example, OH groups and can be desorbed in the form of H2O when the film is heat- treated up to 6000C.

It can be seen from the graphical representation that the remaining amount of the component that can be desorbed as H2O in each of the samples, respectively, subjected to heat treatment at 1300C (3.1 * 10"3 g/m2) and 170°C (3.3 x 10"3 g/m2) is larger than that in the sample not subjected to heat treatment (3.0 * 10~3 g/m2) Although the foregoing fact seems to be in contradiction to a relationship between a heat treatment and a residual component, possible reasons for the contradiction are as described below. One possible reason is that H2O molecules or OH groups adsorbing to the surface of the semiconductor film of the In-Ga-Zn-O system have been diffused into the semiconductor film when the temperature of the film is increased up to 1300C for the heat treatment. Another possible reason is that a component that can be desorbed as H or H2 when not subjected to heat treatment has changed into a component that can be desorbed as H2O (i.e., the bonding state has changed) by the heat treatment. The foregoing is sustained by the fact that, in FIG. 3, the desorption amount of moisture from each of the samples, respectively, subjected to heat treatment at 1300C and 170°C is larger than that from the sample not subjected to heat treatment at temperatures higher than about 2000C. Therefore, it is considered as follows. That is, the remaining amount of a component that can be desorbed as H2O has increased, but the component has changed into such a form that the component is not desorbed unless the temperature of the component becomes higher than the temperature at which the heat treatment was performed, so that the component may not be desorbed when the film is heat-treated up to the same temperature again.

In contrast, it can be seen that the remaining amount of the component that can be desorbed as H2O in each of the samples subjected to the heat treatment at 2400C or more is much lower than that in the sample not subjected to a heat treatment. This is probably because the temperature of 2400C is equal to or more than the temperature at which even the above-mentioned "such a form that the component is not desorbed as H2O unless the temperature becomes higher than the heat treatment temperature" is desorbed. The amount of a component which remains in the sample subjected to the heat treatment at 2400C and can be desorbed as H2O is 2.7 x 10~3 g/m2. As described above, the heat treatment temperature may have only to fall within the range of 150°C to 3000C. However, in order that the diffusion of moisture may be prevented over a long period of time, it is preferred that the amount of the component which remains in the semiconductor layer and can be desorbed as H2O is smaller. In view of the foregoing, the preferable heat treatment temperature is such that the amount of a component which remains in the semiconductor layer and can be desorbed as H2O is less than that in a sample not subjected to a heat treatment. Therefore, with reference to FIG. 4, the temperature can be considered to be the temperature at a point on a straight line connecting the points at 1700C and 2400C at which the remaining amount of the component desorbable as H2O is equal to that (3.0 * 10"3 g/m2) of the sample not subjected to a heat treatment, and the temperature determined on the basis of the above consideration is about 2000C (calculated: 2020C) when the measurement accuracy of the temperature and remaining amount is taken into consideration. In view of the foregoing, the heat treatment temperature is preferably more than 2000C, and more preferably more than 2020C. In addition, the amount of a component which remains in the semiconductor layer and can be desorbed as H2O is preferably less than 3.0 * 10"3 g/m2. In addition, a transparent semiconductor layer is more suitable because the aperture ratio of the device increases.

A sputtering method or a pulse laser vapor deposition method is suitable for the formation of the semiconductor layer. Use of various sputtering methods advantageous for improving the productivity is more suitable. It is also effective to additionally provide a buffer layer between the semiconductor layer and the substrate appropriately.

For the material of the gate insulating film, any¬ one kind of Al2O3, Y2O3, SiO2, SiNx, and HfO2, or a mixed crystal compound containing at least two kinds of these compounds can preferably be used. However, the preferable compound for the gate insulating film is not limited to those described above.

An insulating film of an In-Zn-O system or a system obtained by adding Ga to the foregoing system is more preferable.

As is the case with the above semiconductor film of the In-Ga-Zn-O system, by controlling the film forming conditions, it is possible to provide an insulating film in which the moisture in the film is hardly desorbed at a temperature equal to or less than the temperature at which the film has been heat-treated once. A transparent insulating film is more suitable because the aperture ratio of the device increases.

Examples of the material for each of the source electrode, the drain electrode, and the gate electrode include Au, Ti, Ni, In, Sn, Zn, Cu, or Ag, or an alloy or oxide containing at least one of them.

A conductive film of an In-Zn-O system or a system obtained by adding Ga to the foregoing system can also be adopted as a material for each of the source electrode, the drain electrode, and the gate electrode .

As is the case with the above semiconductor film of the In-Ga-Zn-O system, by controlling the film forming conditions, it is possible to provide an electrode in which the moisture in the electrode is hardly desorbed at a temperature equal to or less than the temperature at which the electrode has been heat- treated once. (Organic layer) The organic layer 10 used in this embodiment is generally formed of a plurality of layers as follows: a two-layer structure composed of hole- transporting layer/light-emitting layer + electron- transporting layer (which means a light-emitting layer having an electron-transporting function) ; a three-layer structure composed of hole- transporting layer/light-emitting layer/electron- transporting layer; a four-layer structure composed of hole injection layer/hole-transporting layer/light-emitting layer/electron-transporting layer; a five-layer structure composed of hole injection layer/hole-transporting layer/light-emitting layer/electron-transporting layer/electron-injecting layer" .

In addition to the foregoing, an electron barrier layer, an adhesion improving layer, or the like may also be additionally provided.

For the light-emitting layer portion, either one of fluorescence or phosphorescence may be used, but the use of phosphorescence is more effective from the viewpoint of a higher emission efficiency. As a phosphorescent material, an iridium complex is useful. In addition, both of low molecular weight molecules and high molecular weight molecules can be utilized. Generally, the low molecular weight molecules can be formed into a film by a vapor deposition method, while the high molecular weight molecules can be formed into a film by a ink jet or printing method. Examples of the low molecular weight molecule include amine complexes, anthracenes, rare earth complexes, and noble metal complexes. Examples of the high molecular weight molecule include a π-conjugated system and a dye-containing polymer.

Examples of the material of the electron injection layer include an alkali metal, an alkaline earth metal, a compound containing such a metal, and an organic substance doped with an alkali metal. In addition, examples of the material of the electron- transporting layer include aluminium complexes, oxadiazoles, triazoles, and phenanthrolines .

Examples of the material for the hole injection layer include arylamines, phthalocyanines, and organic substances doped with a Lewis acid. The hole- transporting layer may be, for example, an arylamine.

The drying of a hole-transporting layer is often a process to be performed at the highest temperature during the formation of an organic layer except the formation of a device separation film.

In the case of poly (3, 4- ethylenedioxythiophene) :poly (styrenesulfonate) (hereinafter referred to as "PEDOT: PSS") as the most representative material for a hole-transporting layer, the layer is dried mainly at a temperature of 1200C or more. However, when it is required to suppress the degradation of the layer over a long period of time, it is desirable that the layer is dried at a temperature of 1500C or more.

Therefore, the heat treatment temperature for the field effect transistor is less than 3000C below which the change in the characteristics of the above semiconductor film of the In-Ga-Zn-O system is small, and is 1200C or more, desirably 1500C or more. (Upper/lower electrodes)

The preferable material for each of the upper and lower electrodes varies depending on which one of a two-sided emission type, a top emission type, and a bottom emission type is adopted for the light-emitting device and also on whether the electrode is a cathode or an anode. (Upper electrode)

In the two-sided emission type and top emission type light-emitting devices, the upper electrode needs to be transparent. In the case of an organic EL device, the preferable electrode varies depending on the constitution of the device.

For example, when an organic layer to be connected to an upper electrode is an anode, a transparent electrode having a large work function is preferably used as the upper electrode. Examples of the material of the transparent electrode include ITO, conductive ZnO, and an In-Zn-O system each having an electron carrier concentration of 1018/cm3 or more.

Further, an In-Ga-Zn-O system having an electron carrier concentration of 1018/cm3 or more can also be utilized. In this case, unlike a TFT, the carrier concentration is preferably as high as possible, and for example, a carrier concentration of 1019/cm3 or more is preferable.

In a bottom emission type light-emitting device, the upper electrode does not need to be transparent. Accordingly, when the upper electrode is an anode, an Au alloy, Pt alloy, or the like having a large work function can be utilized, and when the upper electrode is a cathode, Ag-added Mg, Li-added Al, a suicide, a boride, a nitride, or the like can be utilized. (Lower electrode)

In the two-sided emission type and bottom emission type light-emitting devices, the lower electrode needs to be transparent.

A preferable production method for the lower electrode is such that a material containing at least one element of In, Ga, and Zn is deposited while the deposition conditions such as an oxygen flow rate are adjusted so that an electron carrier concentration of 1018/cm3 or more is attained. Furthermore, for example, conductive ZnO, an In- Zn-O system, or ITO at least part of which is an amorphous oxide can preferably be used. Moreover, an In-Ga-Zn-O system having an electron carrier concentration of 1018/cm3 or more can also be utilized.

In addition, an alloy doped with an alkali metal or an alkaline earth metal and formed into a film having a thickness of several tens of nanometers or less on the upper portion of a transparent electrode can also be used as the lower electrode.

In the case of the top emission type light- emitting device, the lower electrode does not need to be transparent. Accordingly, when the lower electrode is an anode, an Au alloy, Pt alloy, or the like having a large work function can be utilized, and when the lower electrode is a cathode, Ag-added Mg, Li-added Al, a suicide, a boride, a nitride, or the like can be utilized. (Example)

Hereinafter, an example of a production method in which organic EL devices and OS-TFTs are mounted on the same substrate will be described with reference to FIG. 5. The maximum temperature which can be reached during a process for the formation of the organic EL device is 1500C.

In addition, in order that the device may be prevented from unnecessarily adsorbing moisture owing to exposure to the atmosphere, the device is kept so as not to be brought into contact with the atmosphere by appropriately using, for example, a transfer vessel except during a process utilizing a photolithographic method and a wet process. (Formation of field effect transistor) A glass substrate 1 (1737 (trade name); manufactured by Corning Inc.) is selected as a substrate on which a film is to be formed. Before the formation of a film, the substrate is ultrasonically degreased and cleaned sequentially with acetone, IPA, and ultrapure water for 5 minutes each, and is then subjected to a heat treatment for dehydration in air at 1500C for 10 minutes. At that time, in the case where the dehydration is insufficient, the atmosphere, temperature, or time period of the heat treatment can be changed to such an extent that the surface flatness of the glass substrate is not adversely affected.

The case where the dehydration is insufficient is a case where the amount of a component that can be desorbed as H2O from the field effect transistor is 10~5 g/m2 or more at the time of the formation of an organic layer irrespective of whether a heat treatment step for a semiconductor layer is performed.

A patterning for a gate electrode 2 is performed with respect to the glass substrate by a photolithographic method and a wet processing method in advance. Then, Al and Ag are vapor-deposited, respectively, in a film thickness of 150 nm to thereby form the gate electrode 2.

Next, an Siθ2 film is formed by a sputtering method as a gate insulating film 3. The sputtering is performed in an atmosphere having an Ar gas flow rate of 2.2 x 10"2 Pa-m3/sec and an O2 gas flow rate of 2.0 * 10"3 Pa-m3/sec at a pressure of 0.187 Pa while the temperature of the substrate is set to room temperature, and the input power is set to 300 W.

Then, the resultant is subjected to a heat treatment for dehydration in the air at 1500C for 10 minutes. At that time, in the case where the dehydration is insufficient, the conditions for the heat treatment can be changed as is the case with the glass substrate. After that, an amorphous oxide semiconductor thin film 4 of an In-Ga-Zn-O system is formed on the patterned substrate by a sputtering method with a polycrystalline sintered body having a composition of InGaO3 (ZnO) 4 being used as a target. An available method for the patterning is a photolithographic method or a wet processing method.

At that time, the film is deposited in a thickness of 40 nm in a desired atmosphere containing Ar gas and oxygen gas at a pressure of 0.6 Pa and at room temperature. After that, the resultant is subjected to a heat treatment for dehydration in the air at 1500C for 5 minutes. At that time, in the case where the dehydration is insufficient, the conditions for the heat treatment can be changed as is the case with the glass substrate.

Here, each of samples before and after the heat treatment is transferred to a temperature programmed desorption spectrometer (EMD-WA 1000S/W (trade name) ; manufactured by ESCO, Ltd. ) by use of a transfer vessel without being exposed to the atmosphere and the measurement is then performed. The amount of a component that can be desorbed as H2O from the sample before the heat treatment until the temperature of the sample is increased to 1500C is 7 * 10~4 g/m2, which is more than 10~5 g/m2.

The amount of a component that can be desorbed as H2O from the sample after the heat treatment until the temperature of the sample is increased to 1500C is 3 * 10"6 g/m2, which is less than 10"5 g/m2.

Then, a source electrode 5 and a drain electrode 6 are patterned by a photolithographic method and a wet processing method.

Next, an SiO2 film is formed by a sputtering method as an insulating film 7 under the same conditions as those for the above gate insulating film 3, and the resultant is subjected to a heat treatment in the air at 1500C for 10 minutes. At that time, in the case where the dehydration is insufficient, the conditions for the heat treatment can be changed as is the case with the glass substrate.

In the above series of processes, each layer is formed to have a desired size by use of a photolithographic method and a dry processing method. (Formation of lower electrode)

Next, ITO is formed into a film having a thickness of 350 nm by a sputtering method, whereby a lower electrode 8 is obtained.

At that time, the source electrode 6 and the lower electrode 8 are connected to each other through a contact hole. After the formation of the film, the resultant is subjected to a heat treatment for dehydration in the air at 1500C for 5 minutes. At that time, in the case where the dehydration is insufficient, the conditions for the heat treatment can be changed as is the case with the glass substrate.

(Determination of desorption amount of moisture before formation of organic layer)

A part of the sample that has been subjected to the heat treatment after the formation of the lower electrode 8 is transferred to a temperature programmed desorption spectrometer by use of a transfer vessel without being exposed to the atmosphere and the measurement is performed. The amount of a component that can be desorbed as H2O until the temperature of the sample is increased to 1500C is 8 x 10"6 g/m2, which is less than 10"5 g/m2 and is therefore smaller than the desorption amount of moisture that causes degradation of the organic EL device.

(Formation of device separation film) A device separation film 9 is formed as needed. (Formation of organic layer)

Next, by using a resistive evaporation method, a tris (8-quinolinol) aluminum film having a thickness of 25 nm is formed as an electron-transporting layer, and a 4, 4 ' -bis (2, 2) -diphenylvinyl film having a thickness of 45 nm is formed thereon as a light-emitting layer. After that, a PEDOT: PSS film having a thickness of 20 nm is formed as a hole-transporting layer. Further, 4,4' -bis [N,N-diamino] -4"-phenyl-triphenylamine is formed thereon as a hole injection layer having a thickness of 55 nm. The electron-transporting layer, the light-emitting layer, the hole-transporting layer, and the hole injection layer together constitute an organic layer 10. The formation of the PEDOTrPSS film is performed at the highest temperature during the formation of the organic layer 10, and involves spin coating at 600C and at 4,000 rpm, followed by drying in the air at 1500C for 20 minutes. (Formation of upper electrode)

By using a co-evaporation method, an alloy of Al and Ag is formed into a film having a thickness of 50 nm, and Al is formed into a film having a thickness of 50 nm, whereby an upper electrode 11 is obtained.

The above-mentioned device is driven by bringing a probe into contact with the device. As a result, the device emits blue light from the rear side of the substrate, that is, in a bottom emission type. (Formation of passivation film)

A passivation film 12 is further formed thereon as needed. (Comparative Example)

In the present comparative example, an amorphous oxide semiconductor thin film 4 of an In-Ga-Zn-O system is formed by following the same procedure as Example above. The thus formed amorphous oxide semiconductor thin film 4 is not subjected to a moisture desorption treatment and subjected, before the formation of the organic layer, to a temperature programmed desorption analysis. As a result, the amount of a component that can be desorbed as H2O until the temperature of the sample is increased to 1500C is 9 * 10~4 g/m2 or more, which significantly exceeds 10~5 g/m2.

Therefore, when the organic layer is formed on the TFT produced in the comparative example, the desorption of moisture is caused during the step of forming the organic layer, thereby resulting in the degradation of the characteristics of the organic layer, While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.

This application claims the benefit of Japanese Patent Applications Nos . 2007-101638, filed April 9,

2007 and 2008-036044, filed February 18, 2008, which are hereby incorporated by reference herein in their entirety.

Claims

1. A method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor comprising an oxide semiconductor containing at least one element selected from In and Zn, the method comprising the steps of: forming a field effect transistor on a substrate; forming an insulating layer; ^ forming a lower electrode on the insulating layer; forming an organic layer for constituting an organic EL device on the lower electrode; forming an upper electrode on the organic layer; and after a step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer, performing heat treatment such that an amount of a component that is desorbable as H2O from the field effect transistor during the step of forming the organic layer is- less than 10~5 g/m2.
2. The method according to claim 1, wherein the heat treatment is performed successively after the step of forming the semiconductor layer of the field effect transistor.
3. The method according to claim 1, wherein the heat, treatment is performed successively after the step of forming the field effect transistor.
4. The method according to claim 1, wherein the heat treatment is performed after the step of forming the insulating layer and before the step of forming the organic layer for constituting the organic EL device.
5. The method according to any one of claims 1 to 4, wherein the field effect transistor comprises a source electrode, a drain electrode, the semiconductor layer, a gate electrode, and a gate insulating film, and wherein the source electrode, the drain electrode, the semiconductor layer, the gate insulating film, and the gate electrode are each formed at a temperature of 3000C or less.
6. A light-emitting apparatus produced by the method set forth in claim 1, wherein the semiconductor layer comprises an oxide containing at least one of In and Zn.
7. The light-emitting apparatus according to claim 6, wherein the semiconductor layer comprises an oxide containing In and Zn, and at least a part of the layer is amorphous.
8. The light-emitting apparatus according to claim 6, wherein an amount of a component that is present in the semiconductor layer after the heat treatment step and is desorbable as H2O when subjected to heat treatment up to 6000C is less than 3.0 * 10~3 g/m2.
PCT/JP2008/057047 2007-04-09 2008-04-03 Light-emitting apparatus and production method thereof WO2008126879A1 (en)

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US8704267B2 (en) 2008-10-16 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
US8841163B2 (en) 2009-12-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device comprising oxide semiconductor
US8890781B2 (en) 2009-10-21 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including display device
US8912541B2 (en) 2009-08-07 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8936963B2 (en) 2009-03-13 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8963517B2 (en) 2009-10-21 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit comprising transistor which includes an oixide semiconductor
US8993386B2 (en) 2009-03-12 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN104538355A (en) * 2009-08-27 2015-04-22 株式会社半导体能源研究所 A method for manufacturing a semiconductor device
JP2015122518A (en) * 2009-10-09 2015-07-02 株式会社半導体エネルギー研究所 Shift register
US9082858B2 (en) 2010-02-19 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor including an oxide semiconductor and display device using the same
JP2015135976A (en) * 2009-12-28 2015-07-27 株式会社半導体エネルギー研究所 Semiconductor device
US9130043B2 (en) 2009-10-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN104934483A (en) * 2009-09-24 2015-09-23 株式会社半导体能源研究所 Semiconductor element and method for manufacturing the same
US9344090B2 (en) 2011-05-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9385114B2 (en) 2009-10-30 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
US9384976B2 (en) 2009-11-06 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9406808B2 (en) 2009-10-08 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance
US9465271B2 (en) 2010-02-11 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Display device
US9520288B2 (en) 2009-09-24 2016-12-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including IGZO layer and manufacturing method thereof
US9543445B2 (en) 2009-12-25 2017-01-10 Semiconductor Energy Laborartory Co., Ltd. Semiconductor device with oxide semiconductor layer
US9570628B2 (en) 2009-11-27 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9583576B2 (en) 2010-06-25 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9595964B2 (en) 2011-05-19 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9627198B2 (en) 2009-10-05 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film semiconductor device
US9646521B2 (en) 2010-03-31 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
JP2017085166A (en) * 2008-10-24 2017-05-18 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9679768B2 (en) 2009-10-21 2017-06-13 Semiconductor Energy Laboratory Co., Ltd. Method for removing hydrogen from oxide semiconductor layer having insulating layer containing halogen element formed thereover
US9704976B2 (en) 2009-04-02 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9721971B2 (en) 2009-12-04 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US9768319B2 (en) 2009-11-20 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Modulation circuit and semiconductor device including the same
US9799298B2 (en) 2010-04-23 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and driving method thereof
US9805641B2 (en) 2009-09-04 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US9829533B2 (en) 2013-03-06 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film and semiconductor device
US9837442B2 (en) 2009-08-07 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a plurality of N-channel transistors wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state
US9887298B2 (en) 2009-11-28 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9887276B2 (en) 2009-07-03 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device having oxide semiconductor
US9905596B2 (en) 2009-11-06 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a channel region of a transistor with a crystalline oxide semiconductor and a specific off-state current for the transistor
KR101843558B1 (en) 2009-10-09 2018-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Shift register and display device and driving method thereof
US9947797B2 (en) 2009-05-29 2018-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9947799B2 (en) 2010-06-18 2018-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9978878B2 (en) 2010-04-23 2018-05-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9985139B2 (en) 2014-11-12 2018-05-29 Qualcomm Incorporated Hydrogenated p-channel metal oxide semiconductor thin film transistors
US10002949B2 (en) 2009-11-06 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10008630B2 (en) 2012-08-23 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Display device
US10008515B2 (en) 2010-04-09 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10013087B2 (en) 2010-04-28 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and driving method the same
US10014415B2 (en) 2009-12-04 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device has an oxide semiconductor layer containing a C-axis aligned crystal
US10056494B2 (en) 2009-11-13 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10061172B2 (en) 2009-10-16 2018-08-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic apparatus having the same
US10069014B2 (en) 2011-01-26 2018-09-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10079306B2 (en) 2009-07-31 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10079307B2 (en) 2009-10-21 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method for the same
US10095076B2 (en) 2010-01-15 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a backlight and light-receiving element
US10186603B2 (en) 2010-05-21 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including oxygen doping treatment
US10211230B2 (en) 2010-01-24 2019-02-19 Semiconductor Energy Laboratory Co., Ltd. Display device
US10211344B2 (en) 2009-10-16 2019-02-19 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US10249651B2 (en) 2011-04-27 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US10283627B2 (en) 2009-05-29 2019-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10310348B2 (en) 2009-10-16 2019-06-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic apparatus having the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070046191A1 (en) * 2005-08-23 2007-03-01 Canon Kabushiki Kaisha Organic electroluminescent display device and manufacturing method thereof
US20070052025A1 (en) * 2005-09-06 2007-03-08 Canon Kabushiki Kaisha Oxide semiconductor thin film transistor and method of manufacturing the same
JP2007073559A (en) * 2005-09-02 2007-03-22 Casio Comput Co Ltd Method of manufacturing thin-film transistor
EP1770788A2 (en) * 2005-09-29 2007-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070046191A1 (en) * 2005-08-23 2007-03-01 Canon Kabushiki Kaisha Organic electroluminescent display device and manufacturing method thereof
JP2007073559A (en) * 2005-09-02 2007-03-22 Casio Comput Co Ltd Method of manufacturing thin-film transistor
US20070052025A1 (en) * 2005-09-06 2007-03-08 Canon Kabushiki Kaisha Oxide semiconductor thin film transistor and method of manufacturing the same
EP1770788A2 (en) * 2005-09-29 2007-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof

Cited By (309)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8704267B2 (en) 2008-10-16 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device
JP2017085166A (en) * 2008-10-24 2017-05-18 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9768281B2 (en) 2009-03-12 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8993386B2 (en) 2009-03-12 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8936963B2 (en) 2009-03-13 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US9704976B2 (en) 2009-04-02 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9947797B2 (en) 2009-05-29 2018-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10283627B2 (en) 2009-05-29 2019-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102473727A (en) * 2009-06-29 2012-05-23 夏普株式会社 Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device
KR101732859B1 (en) 2009-06-30 2017-05-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US8846460B2 (en) 2009-06-30 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101420025B1 (en) * 2009-06-30 2014-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
CN106409684A (en) * 2009-06-30 2017-02-15 株式会社半导体能源研究所 Method of manufacturing semiconductor device
US9576795B2 (en) 2009-06-30 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9136115B2 (en) 2009-06-30 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2017050546A (en) * 2009-06-30 2017-03-09 株式会社半導体エネルギー研究所 Manufacturing method for semiconductor device
EP2449594A4 (en) * 2009-06-30 2015-06-03 Semiconductor Energy Lab Method for manufacturing semiconductor device
KR20140054445A (en) * 2009-06-30 2014-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US9831101B2 (en) 2009-06-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8609478B2 (en) 2009-06-30 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9293566B2 (en) 2009-06-30 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9412768B2 (en) 2009-06-30 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101645061B1 (en) 2009-06-30 2016-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US8557641B2 (en) 2009-06-30 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101644249B1 (en) 2009-06-30 2016-07-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US10090171B2 (en) 2009-06-30 2018-10-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101747523B1 (en) 2009-06-30 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
TWI582855B (en) * 2009-06-30 2017-05-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US10062570B2 (en) 2009-06-30 2018-08-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9985118B2 (en) 2009-06-30 2018-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9299807B2 (en) 2009-06-30 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI623046B (en) * 2009-06-30 2018-05-01 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US9054137B2 (en) 2009-06-30 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2018064102A (en) * 2009-06-30 2018-04-19 株式会社半導体エネルギー研究所 Manufacturing method for semiconductor device
US9852906B2 (en) 2009-06-30 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102473728A (en) * 2009-06-30 2012-05-23 株式会社半导体能源研究所 Method for manufacturing semiconductor device
US20110003428A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20120102037A (en) * 2009-06-30 2012-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011001879A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011002046A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102460713A (en) * 2009-06-30 2012-05-16 株式会社半导体能源研究所 Method for manufacturing semiconductor device
US8216878B2 (en) * 2009-06-30 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10297679B2 (en) 2009-07-03 2019-05-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9887276B2 (en) 2009-07-03 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device having oxide semiconductor
CN101944485A (en) * 2009-07-03 2011-01-12 株式会社半导体能源研究所 Manufacturing method of semiconductor device
CN105914236A (en) * 2009-07-03 2016-08-31 株式会社半导体能源研究所 Manufacturing method of semiconductor device
US8441011B2 (en) 2009-07-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9379141B2 (en) 2009-07-10 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
US8835920B2 (en) 2009-07-10 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101642620B1 (en) 2009-07-10 2016-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method the same
CN102473731A (en) * 2009-07-10 2012-05-23 株式会社半导体能源研究所 Method for manufacturing semiconductor device
WO2011004723A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
KR101422362B1 (en) 2009-07-10 2014-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device, display panel and electronic appliance
KR101791370B1 (en) 2009-07-10 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9269794B2 (en) 2009-07-10 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
KR101857405B1 (en) 2009-07-10 2018-05-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8294147B2 (en) 2009-07-10 2012-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
WO2011004755A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8900916B2 (en) 2009-07-10 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including oxide semiconductor film
WO2011004724A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9754974B2 (en) 2009-07-10 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101493662B1 (en) 2009-07-10 2015-02-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, electronic appliance and display panel
US10157936B2 (en) 2009-07-10 2018-12-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20140059306A (en) * 2009-07-10 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method the same
US9054138B2 (en) 2009-07-10 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9490277B2 (en) 2009-07-10 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2452362A4 (en) * 2009-07-10 2015-06-17 Semiconductor Energy Lab Method for manufacturing semiconductor device
US8324027B2 (en) 2009-07-10 2012-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN104835850A (en) * 2009-07-10 2015-08-12 株式会社半导体能源研究所 Semiconductor device
US10256291B2 (en) 2009-07-17 2019-04-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8241949B2 (en) 2009-07-17 2012-08-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR101739154B1 (en) 2009-07-17 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP2017063208A (en) * 2009-07-17 2017-03-30 株式会社半導体エネルギー研究所 Oxide semiconductor film manufacturing method
US8952378B2 (en) 2009-07-17 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8378343B2 (en) 2009-07-17 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011007675A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011010542A1 (en) * 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8648343B2 (en) 2009-07-23 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8420441B2 (en) 2009-07-31 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device
US9024313B2 (en) 2009-07-31 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102473735A (en) * 2009-07-31 2012-05-23 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the same
US9293601B2 (en) 2009-07-31 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Display device
US10079306B2 (en) 2009-07-31 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8822990B2 (en) 2009-07-31 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9741779B2 (en) 2009-07-31 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device
US9786689B2 (en) 2009-07-31 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Display device
US8421083B2 (en) 2009-07-31 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with two oxide semiconductor layers and manufacturing method thereof
US8937306B2 (en) 2009-07-31 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
WO2011013596A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9224870B2 (en) 2009-07-31 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device
WO2011013523A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9362416B2 (en) 2009-07-31 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor wearable device
US9466756B2 (en) * 2009-08-07 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20130302924A1 (en) * 2009-08-07 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10243005B2 (en) 2009-08-07 2019-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8912541B2 (en) 2009-08-07 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9837442B2 (en) 2009-08-07 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a plurality of N-channel transistors wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state
CN104538355A (en) * 2009-08-27 2015-04-22 株式会社半导体能源研究所 A method for manufacturing a semiconductor device
CN104538355B (en) * 2009-08-27 2018-08-31 株式会社半导体能源研究所 A method of manufacturing a semiconductor device
US9537012B2 (en) 2009-09-04 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor layer
US8742422B2 (en) 2009-09-04 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9640670B2 (en) 2009-09-04 2017-05-02 Semiconductor Energy Laboratory Co., Ltd. Transistors in display device
US9530806B2 (en) 2009-09-04 2016-12-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9368641B2 (en) 2009-09-04 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
CN104681447A (en) * 2009-09-04 2015-06-03 株式会社半导体能源研究所 Manufacturing Method Of Semiconductor Device
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US8889496B2 (en) 2009-09-04 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8541780B2 (en) 2009-09-04 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer
US9601516B2 (en) 2009-09-04 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011027715A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2011077510A (en) * 2009-09-04 2011-04-14 Semiconductor Energy Lab Co Ltd Transistor and display device
WO2011027676A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8389989B2 (en) 2009-09-04 2013-03-05 Semiconductor Energy Laboratory Co., Ltd. Transistor having oxide semiconductor layer and display utilizing the same
US9130041B2 (en) 2009-09-04 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8378344B2 (en) 2009-09-04 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device with plural kinds of thin film transistors and circuits over one substrate
US9954007B2 (en) 2009-09-04 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
US8957411B2 (en) 2009-09-04 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US9105735B2 (en) 2009-09-04 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
US9768207B2 (en) 2009-09-04 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8236627B2 (en) 2009-09-04 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9805641B2 (en) 2009-09-04 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US8218099B2 (en) 2009-09-04 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US8502225B2 (en) 2009-09-04 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US9431465B2 (en) 2009-09-04 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US8377762B2 (en) 2009-09-16 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
WO2011033936A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
WO2011033993A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011033915A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9935202B2 (en) 2009-09-16 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device comprising oxide semiconductor layer
US9666820B2 (en) 2009-09-16 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
EP2478563A1 (en) * 2009-09-16 2012-07-25 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
EP2478563A4 (en) * 2009-09-16 2013-01-30 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
CN105609565A (en) * 2009-09-16 2016-05-25 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the same
CN104934483A (en) * 2009-09-24 2015-09-23 株式会社半导体能源研究所 Semiconductor element and method for manufacturing the same
US9318617B2 (en) 2009-09-24 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
TWI585862B (en) * 2009-09-24 2017-06-01 Semiconductor Energy Lab Semiconductor element and method for manufacturing the same
US20170154983A1 (en) * 2009-09-24 2017-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9853167B2 (en) 2009-09-24 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9171938B2 (en) 2009-09-24 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and method for manufacturing the same
US9595600B2 (en) 2009-09-24 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011037213A1 (en) * 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8492758B2 (en) 2009-09-24 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9029191B2 (en) 2009-09-24 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9214563B2 (en) 2009-09-24 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9530872B2 (en) 2009-09-24 2016-12-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and method for manufacturing the same
WO2011036999A1 (en) * 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9520288B2 (en) 2009-09-24 2016-12-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including IGZO layer and manufacturing method thereof
US9130043B2 (en) 2009-10-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9754784B2 (en) 2009-10-05 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device
US9627198B2 (en) 2009-10-05 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film semiconductor device
US9406808B2 (en) 2009-10-08 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance
EP3249698A1 (en) * 2009-10-08 2017-11-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device
EP2486594A1 (en) * 2009-10-08 2012-08-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor layer and semiconductor device
US10115831B2 (en) 2009-10-08 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor layer comprising a nanocrystal
US9306072B2 (en) 2009-10-08 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor layer and semiconductor device
EP2486594A4 (en) * 2009-10-08 2013-07-10 Semiconductor Energy Lab Oxide semiconductor layer and semiconductor device
US8319218B2 (en) 2009-10-08 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor layer and semiconductor device
WO2011043176A1 (en) * 2009-10-08 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor layer and semiconductor device
US8999751B2 (en) 2009-10-09 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for making oxide semiconductor device
KR101843558B1 (en) 2009-10-09 2018-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Shift register and display device and driving method thereof
US10181359B2 (en) 2009-10-09 2019-01-15 Semiconductor Energy Laboratory Co., Ltd. Shift register and display device
US9349791B2 (en) 2009-10-09 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor channel
WO2011043170A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9911856B2 (en) 2009-10-09 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015122518A (en) * 2009-10-09 2015-07-02 株式会社半導体エネルギー研究所 Shift register
WO2011043206A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9941413B2 (en) 2009-10-09 2018-04-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having different types of thin film transistors
JP2011100981A (en) * 2009-10-09 2011-05-19 Semiconductor Energy Lab Co Ltd Semiconductor device
US9006728B2 (en) 2009-10-09 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor transistor
WO2011046003A1 (en) * 2009-10-14 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10310348B2 (en) 2009-10-16 2019-06-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic apparatus having the same
US10061172B2 (en) 2009-10-16 2018-08-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic apparatus having the same
US10211344B2 (en) 2009-10-16 2019-02-19 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US9431546B2 (en) 2009-10-21 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor material transistor having reduced off current
US8890781B2 (en) 2009-10-21 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including display device
US10079307B2 (en) 2009-10-21 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method for the same
US10083651B2 (en) 2009-10-21 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including display device
US9165502B2 (en) 2009-10-21 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including display device
US8963517B2 (en) 2009-10-21 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit comprising transistor which includes an oixide semiconductor
US9929281B2 (en) 2009-10-21 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Transisitor comprising oxide semiconductor
US9679768B2 (en) 2009-10-21 2017-06-13 Semiconductor Energy Laboratory Co., Ltd. Method for removing hydrogen from oxide semiconductor layer having insulating layer containing halogen element formed thereover
US9112041B2 (en) 2009-10-30 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Transistor having an oxide semiconductor film
JP2011119706A (en) * 2009-10-30 2011-06-16 Semiconductor Energy Lab Co Ltd Semiconductor device and method of manufacturing the same
US9385114B2 (en) 2009-10-30 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
WO2011052409A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
US8598635B2 (en) 2009-10-30 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011052411A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
US8704218B2 (en) 2009-10-30 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor film
TWI603481B (en) * 2009-11-06 2017-10-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US9853066B2 (en) 2009-11-06 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9905596B2 (en) 2009-11-06 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a channel region of a transistor with a crystalline oxide semiconductor and a specific off-state current for the transistor
WO2011055631A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8633480B2 (en) 2009-11-06 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof
US9093328B2 (en) 2009-11-06 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof
CN102598282B (en) * 2009-11-06 2015-09-23 株式会社半导体能源研究所 Semiconductor device and manufacturing method
US10002949B2 (en) 2009-11-06 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10079251B2 (en) 2009-11-06 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102598282A (en) * 2009-11-06 2012-07-18 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
US10249647B2 (en) 2009-11-06 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device comprising oxide semiconductor layer
US9384976B2 (en) 2009-11-06 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9093544B2 (en) 2009-11-06 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10056494B2 (en) 2009-11-13 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011058865A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devi ce
US9006729B2 (en) 2009-11-13 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8748880B2 (en) 2009-11-20 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor
WO2011062041A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011062043A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9093262B2 (en) 2009-11-20 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011062057A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9768319B2 (en) 2009-11-20 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Modulation circuit and semiconductor device including the same
US10186619B2 (en) 2009-11-20 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102598285A (en) * 2009-11-20 2012-07-18 株式会社半导体能源研究所 Method for manufacturing semiconductor device
US8193031B2 (en) 2009-11-20 2012-06-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9461181B2 (en) 2009-11-20 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2011129895A (en) * 2009-11-20 2011-06-30 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
CN103151266A (en) * 2009-11-20 2013-06-12 株式会社半导体能源研究所 Method for manufacturing semiconductor device
CN102598285B (en) * 2009-11-20 2016-08-03 株式会社半导体能源研究所 A method for manufacturing a semiconductor device
US8637861B2 (en) 2009-11-20 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Transistor having oxide semiconductor with electrode facing its side surface
US9570628B2 (en) 2009-11-27 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9887298B2 (en) 2009-11-28 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10263120B2 (en) 2009-11-28 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and method for manufacturing liquid crystal display panel
US9991286B2 (en) 2009-12-04 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US8957414B2 (en) 2009-12-04 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising both amorphous and crystalline semiconductor oxide
US9070596B2 (en) 2009-12-04 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US9411208B2 (en) 2009-12-04 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Display device
US9721971B2 (en) 2009-12-04 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US9721811B2 (en) 2009-12-04 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device having an oxide semiconductor layer
US8841163B2 (en) 2009-12-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device comprising oxide semiconductor
US9240467B2 (en) 2009-12-04 2016-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9224609B2 (en) 2009-12-04 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor
US10109500B2 (en) 2009-12-04 2018-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8637863B2 (en) 2009-12-04 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101291485B1 (en) * 2009-12-04 2013-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method of semiconductor device
US10014415B2 (en) 2009-12-04 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device has an oxide semiconductor layer containing a C-axis aligned crystal
US8946097B2 (en) 2009-12-08 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8420553B2 (en) 2009-12-08 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9196738B2 (en) 2009-12-11 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10103272B2 (en) 2009-12-11 2018-10-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI602304B (en) * 2009-12-11 2017-10-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
WO2011071185A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9391095B2 (en) 2009-12-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011074409A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8664036B2 (en) 2009-12-18 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9543445B2 (en) 2009-12-25 2017-01-10 Semiconductor Energy Laborartory Co., Ltd. Semiconductor device with oxide semiconductor layer
US9472559B2 (en) 2009-12-28 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP2015135976A (en) * 2009-12-28 2015-07-27 株式会社半導体エネルギー研究所 Semiconductor device
US10095076B2 (en) 2010-01-15 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a backlight and light-receiving element
US8547753B2 (en) 2010-01-20 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9614097B2 (en) 2010-01-20 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10211230B2 (en) 2010-01-24 2019-02-19 Semiconductor Energy Laboratory Co., Ltd. Display device
US9202923B2 (en) 2010-02-05 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor
US9991288B2 (en) 2010-02-05 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011096263A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8274079B2 (en) 2010-02-05 2012-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor and method for manufacturing the same
US9728555B2 (en) 2010-02-05 2017-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8878180B2 (en) 2010-02-05 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10007160B2 (en) 2010-02-11 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Display device
US9798211B2 (en) 2010-02-11 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Display device
US9465271B2 (en) 2010-02-11 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Display device
US9082858B2 (en) 2010-02-19 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor including an oxide semiconductor and display device using the same
US9564534B2 (en) 2010-02-19 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device using the same
US9911625B2 (en) 2010-02-26 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8551824B2 (en) 2010-02-26 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10304696B2 (en) 2010-02-26 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10043424B2 (en) 2010-03-31 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a display device having an oxide semiconductor switching transistor
US9646521B2 (en) 2010-03-31 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
US10008515B2 (en) 2010-04-09 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8865534B2 (en) 2010-04-23 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9202877B2 (en) 2010-04-23 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102859704A (en) * 2010-04-23 2013-01-02 株式会社半导体能源研究所 Method for manufacturing semiconductor device
US9812533B2 (en) 2010-04-23 2017-11-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9978878B2 (en) 2010-04-23 2018-05-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
CN102859705A (en) * 2010-04-23 2013-01-02 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
JP2011243972A (en) * 2010-04-23 2011-12-01 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device, and semiconductor device
US9799298B2 (en) 2010-04-23 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and driving method thereof
CN102870219A (en) * 2010-04-23 2013-01-09 株式会社半导体能源研究所 Method for manufacturing semiconductor device
US9147754B2 (en) 2010-04-23 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10013087B2 (en) 2010-04-28 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and driving method the same
US9275875B2 (en) 2010-05-21 2016-03-01 Semiconductor Energy Laboratory Co., Ltd Method for manufacturing semiconductor device
US8906756B2 (en) * 2010-05-21 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10186603B2 (en) 2010-05-21 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including oxygen doping treatment
US20110287591A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101808198B1 (en) 2010-05-21 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US9947799B2 (en) 2010-06-18 2018-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9633722B2 (en) 2010-06-25 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9583576B2 (en) 2010-06-25 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9287390B2 (en) 2010-08-16 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9793383B2 (en) 2010-08-16 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
CN102376583A (en) * 2010-08-16 2012-03-14 株式会社半导体能源研究所 Manufacturing method of semiconductor device
CN102376583B (en) * 2010-08-16 2017-04-19 株式会社半导体能源研究所 A method of manufacturing a semiconductor device
US9685562B2 (en) 2010-09-13 2017-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
US9324877B2 (en) 2010-09-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
US8994021B2 (en) 2010-12-03 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8680522B2 (en) 2010-12-03 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US10103277B2 (en) 2010-12-03 2018-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film
US9331208B2 (en) 2010-12-03 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9711655B2 (en) 2010-12-03 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8669556B2 (en) 2010-12-03 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10069014B2 (en) 2011-01-26 2018-09-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10249651B2 (en) 2011-04-27 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9344090B2 (en) 2011-05-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US9595964B2 (en) 2011-05-19 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9397664B2 (en) 2011-05-19 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Programmable logic circuit
US9900007B2 (en) 2011-05-19 2018-02-20 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US10008630B2 (en) 2012-08-23 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Display device
US9829533B2 (en) 2013-03-06 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film and semiconductor device
US9985139B2 (en) 2014-11-12 2018-05-29 Qualcomm Incorporated Hydrogenated p-channel metal oxide semiconductor thin film transistors

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