JP2006012856A - Light emitting device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the deterioration of a light emitting element caused by oxygen and moisture contained in an interlayer insulating film. <P>SOLUTION: The light emitting device is provided in which the interlayer insulating film made of an organic resin material is formed on a TFT formed on an insulating surface, and in which the light emitting element in which a light emitting layer composed of an organic compound is formed between a pair of electrodes is installed on the interlayer insulating film, and in which an inorganic insulating film in which silica and nitrogen are main components, or a carbon film which has a SP<SP>3</SP>bond, and in which hydrogen is contained is formed between the interlayer insulating film and the light emitting element. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to a light-emitting device including a circuit including a thin film transistor (hereinafter referred to as TFT) on a substrate having an insulating surface and a light-emitting element in which a light-emitting layer is formed between a pair of electrodes.

Since TFT can be formed on a transparent substrate, application development to an active matrix image display device has been actively promoted. A TFT using a crystalline semiconductor film (typically a crystalline silicon film) has high mobility, so that a high-definition image display can be realized by integrating functional circuits on the same substrate. ing. 2. Description of the Related Art In recent years, attention has been focused on a technique for forming a TFT using a semiconductor thin film (thickness of about several to several hundred nm) formed on a substrate having an insulating surface. TFTs are widely applied to electronic devices such as ICs and electro-optical devices, and are particularly urgently developed as switching elements for image display devices.

Various applications using such an image display device are expected, but the use for portable devices is attracting attention. In particular, the light emitting element does not need a backlight as used in a conventional liquid crystal display. Therefore, the light emitting element has a great advantage that it can be manufactured to be extremely thin and light.

The light emitting element is a self-luminous element in which the light emitting layer itself emits light when an electric field is applied. The light emission mechanism is such that when a voltage is applied across the light emitting layer between the electrodes, the electrons injected from the cathode and the holes injected from the anode recombine at the light emission center in the light emitting layer to generate molecular excitons. It is said that when it forms and its molecular excitons return to the ground state, it emits energy and emits light.

In an active matrix light-emitting device having a light-emitting element, a TFT is formed over a substrate, and an interlayer insulating film is formed over the TFT. Note that the interlayer insulating film can be formed using an inorganic material containing silicon such as silicon oxide or silicon nitride, or an organic material such as an organic resin material such as polyimide, polyamide, or acrylic.

A light-emitting device refers to a device provided with a light-emitting element having a structure in which an anode, a cathode, and a layer made of a material capable of emitting light by fluorescence or phosphorescence are sandwiched therebetween. In addition, as for the light emitting element here, what used the organic compound for the material from which light emission is obtained is also called OLED (Organic Light Emitting Device).

When the substrate surface is planarized with an interlayer insulating film, it is suitable to form the interlayer insulating film by a spin coating method. In the case of spin coating, a solvent containing silicon as a main component is used as the inorganic material. The interlayer insulating film formed using the solvent containing silicon as a main component has a characteristic of not allowing oxygen or water to permeate, but the characteristic appears when baked at a sufficiently high temperature. Further, when the film thickness is increased, there are defects such as generation of cracks.

On the other hand, as a feature of the interlayer insulating film formed of an organic material, it transmits oxygen,
Although it transmits or absorbs water, it can be formed with a thickness of 1 μm or more, and there is an advantage that the surface can be flattened without being affected by the unevenness of the base. Moreover, the baking temperature at the time of formation is about 300 ° C., and it can be formed on the substrate surface made of an organic resin.

However, the organic material suitable for the interlayer insulating film has characteristics that it allows water vapor to pass therethrough and easily absorbs water. On the other hand, the light-emitting layer has a defect that it is very weak against oxygen and moisture and deteriorates quickly, regardless of whether it is a low molecular or high molecular system. Further, alkali metal or alkaline earth metal is used for the anode or cathode of the light emitting element, and these are easily oxidized by oxygen. That is, moisture causes deterioration of the light emitting element and causes defects such as dark spots.

Silicon oxide, silicon oxynitride, etc. formed by plasma CVD method have a substrate temperature of 300 ° C.
The above substrate heating temperature is required, and it is not suitable for forming on an organic resin film having no heat resistance.

SUMMARY An advantage of some aspects of the invention is to prevent deterioration of a light emitting element due to moisture or oxygen contained in an interlayer insulating film.

In order to solve the above problems, the present invention provides a TFT formed on an insulating surface,
An interlayer insulating film made of an organic material is formed, and a light emitting element in which a light emitting layer is formed between a pair of electrodes is provided on the interlayer insulating film, and between the interlayer insulating film and the light emitting element, Provided is a light-emitting device in which an inorganic insulating film containing silicon and nitrogen as main components is formed.

As the inorganic insulating film, a silicon nitride oxide film or a silicon nitride film is applied, the silicon content ratio is 25.0 atomic% or more and 35.0 atomic% or less, and the nitrogen content ratio is 35.
It is desirable that it is 0 atomic% or more and 65.0 atomic% or less. A silicon oxide film does not have sufficient blocking properties such as moisture, and needs to be densified by applying a silicon nitride oxide film or a silicon nitride film.

As the inorganic insulating film, a silicon nitride oxide film or a silicon nitride film is applied, the silicon content ratio is 25.0 atomic% or more and 40.0 atomic% or less, and the nitrogen content ratio is 3
It is desirable to be 5.0 atomic% or more and 60.0 atomic% or less.

Further, as another insulating film material, a carbon film having SP ³ bonds and containing hydrogen can be used. Typically diamond-like carbon (Diamond Like Car
bon (DLC), which has a gas barrier property such as oxygen and water vapor, and can be formed with good adhesion to an interlayer insulating film made of an organic material.

Further, according to the structure of the present invention, an interlayer insulating film made of an organic material is formed on a thin film transistor, and the silicon content ratio is 25.0 at.
An inorganic insulating film having a content ratio of mic% to 35.0 atomic% and a nitrogen content ratio of 35.0 atomic% to 65.0 atomic% is formed, and a light emitting layer is provided between the pair of electrodes on the inorganic insulating film. A method for manufacturing a light-emitting device for forming a light-emitting element is provided.

In the structure of the present invention, an interlayer insulating film made of an organic material is formed on a thin film transistor, and the silicon content is 25.0 atomic% or more and 40.0 atomic% or less on the interlayer insulating film by a sputtering method, and the nitrogen content is Is more than 35.0 atomic% and 60.0a
Provided is a method for manufacturing a light-emitting device, in which an inorganic insulating film of tomic% or less is formed and a light-emitting element having a light-emitting layer between a pair of electrodes is formed over the inorganic insulating film.

As the inorganic insulating film, a carbon film having SP ³ bonds and containing hydrogen may be formed by a sputtering method.

In the structure of the above invention, a thermosetting or photocurable organic resin material is applied as the interlayer insulating film made of an organic material, and acrylic, polyimide, polyamide, polyimideamide, aramid, or the like can be applied.

The method of forming the inorganic insulating film includes a sputtering method, a reactive sputtering method,
It is formed by using a vapor phase film forming method such as an ion beam sputtering method, an ECR (electron cyclotron resonance) sputtering method, or an ionized vapor deposition method. Since these film formation methods are methods in which atoms or molecules are physically deposited on the substrate, they hardly react with the interlayer insulating film made of the underlying organic material, and there is no risk of chemical alteration. . Further, there is a feature that a dense film can be formed even in a temperature range of room temperature to 300 ° C., preferably 150 to 250 ° C. And it has the characteristic which prevents permeation | transmission of oxygen and a water | moisture content.

In the case of film formation using sputtering, an inorganic insulating film mainly containing silicon and nitrogen with good light transmittance can be formed at a substrate temperature of 150 ° C. to 250 ° C. By providing this inorganic insulating film, the anode, the cathode, and the light emitting material are shielded from oxygen and moisture from the interlayer insulating film using an organic material, and deterioration can be prevented.

The inorganic insulating film mainly containing silicon and nitrogen uses a target mainly containing silicon in film formation by sputtering, and uses argon, nitrogen, oxygen, or nitrogen oxide hydrogen as a sputtering gas. Form. In the film containing silicon and nitrogen as one of the main components, the composition ratio of nitrogen and oxygen varies depending on the gas flow rate during film formation. In the present specification, a film in which nitrogen is mostly contained as a main component other than silicon in the composition ratio is referred to as a silicon nitride film. A film containing oxygen and nitrogen as main components other than silicon in the composition ratio is referred to as a silicon oxynitride film.

In the above steps, since the substrate is not heated to 300 ° C. or higher, it can be similarly applied to the case where a TFT is formed on an organic resin substrate.

By forming an inorganic insulating film or a carbon film on the interlayer insulating film made of an organic material in this manner, oxygen and moisture from the interlayer insulating film side can be prevented from entering the light emitting element side. Deterioration can be prevented. Further, it is possible to prevent the mobile ions from the light emitting element from diffusing to the TFT side, and it is possible to suppress fluctuations in the threshold value of the TFT. Accordingly, it is possible to suppress the occurrence of dark spots and a decrease in luminance in the light emitting device, and to improve the reliability of the TFT. A light emitting device with few dark spots and little deterioration can be formed on an organic resin substrate.

“Embodiment 1”
In the present invention, an inorganic insulating film such as a silicon nitride film and a silicon oxynitride film is formed by forming a TFT on the surface of an insulating substrate, forming an interlayer insulating film made of an organic material thereon, and contacting the film with a sputtering method. Alternatively, the light emitting device is completed through a process of forming a carbon film. [Embodiment 1] shows an example in which a silicon oxynitride film or a silicon nitride film is used as the inorganic insulating film.

An interlayer insulating film made of an organic material is formed by a coating method. A thermosetting or photocurable organic resin material is applied to the interlayer insulating film made of an organic material, and acrylic, polyimide, polyamide, polyimideamide, aramid, or the like is applied. Other,
As a low dielectric constant film having a dielectric constant smaller than 3.8, a fluorine-added silicon oxide film, organic SOG (Spin on Glass), HSQ (inorganic hydrogenated siloxy acid), HOSP (organic siloxy acid polymer), porous A quality SOG or the like can also be applied.

A target made of silicon, silicon nitride, or silicon oxynitride is used as a target mainly containing silicon as a formation condition by a sputtering method for the inorganic insulating film formed thereon. The following is a result of studying a method for forming a silicon nitride film and a silicon oxynitride film.

The silicon nitride film and the silicon oxynitride film were each formed to a thickness of 100 nm on a glass substrate by sputtering, and the transmittance was measured. The transmittance characteristics results are shown in FIG. 1 as numbers (1) and (2), respectively. FIG. 1 shows the transmittance characteristic (3) of a 100 nm-thick silicon oxynitride film by plasma CVD and the transmittance characteristic of glass (
4) is also shown. According to FIG. 1, the silicon oxynitride film has better light transmittance over the visible light range. In order to improve the transmittance, it is effective to add oxygen into the film during film formation.

However, it was difficult to correlate the amount of oxygen in the film and the transmittance. Table 1 shows the results of comparing the compositions of silicon oxynitride films and silicon nitride films formed by plasma CVD and sputtering.

The silicon oxynitride film in Table 1 uses silicon as a target, and the deposition gas and flow rate are set to N.
₂ : H ₂ : N ₂ O = 31: 5: 4 sccm. The film forming gas pressure was 0.4 Pa, the film forming power was RF power, and a circular target having a radius of 12 inches was set to 3 kW. The film forming gas and flow rate were set to N ₂ O = 4 sccm, but oxygen was passed instead of N ₂ O.
Alternatively, the film quality can be changed by changing the flow ratio of each film forming gas.
On the other hand, the silicon nitride film in Table 1 uses silicon as a target, and the deposition gas and flow rate are
N ₂ : Ar = 20: 20 sccm. The deposition gas pressure was 0.4 Pa, the deposition power was an RF power source, and a circular target having a radius of 6 inches was set to 0.8 kW.
From Table 1, the same transmittance is obtained even if the composition ratio is different. On the other hand, since the silicon nitride film has better characteristics of blocking oxygen and moisture than the silicon oxide film, it may be desirable that the insulating film mainly containing silicon and nitrogen has a high nitriding composition ratio.

The oxygen content in the film containing silicon and nitrogen as one of the main components seems to influence the transmittance characteristics and the characteristics of blocking oxygen and moisture. Therefore, a film containing silicon and nitrogen as main components is formed on the organic resin film by a sputtering method, and the composition ratio in the film is determined in accordance with the structure of the element. However, from Table 1, it was confirmed that the silicon composition is 25.0 atomic% to 35 atomic%, and the nitrogen composition is 35.0 atomic% to 65.0 atomic%.

The silicon oxynitride film is formed with a thickness of about 100 nm. The target is silicon, and the deposition gas and flow rate are N ₂ : H ₂ : N ₂ O = 31: 5: 4s.
ccm. The film forming gas pressure is 0.4 Pa, the film forming power is RF power, and the radius is 12 inc.
It was set to 3kW using a circular target of h.

By forming a film (silicon oxynitride film or silicon nitride film) mainly composed of silicon and nitrogen with good light transmittance over the interlayer insulating film, the anode, the cathode, and the light emitting material are interlayers using organic materials. It is shielded from oxygen and moisture from the insulating film, and deterioration can be prevented.

“Embodiment 2”
An example in which a silicon nitride film formed under a film formation condition different from that in Embodiment Mode 1 is used for an inorganic insulating film is shown.

A TFT is formed on the surface of the insulating substrate by the same process as in the first embodiment, an interlayer insulating film made of an organic material is formed thereon, and then a silicon nitride film is formed.

The silicon nitride film was formed by a sputtering method. At this time, the film formation conditions were that silicon was used as a target, and the film formation gas and the flow rate were N ₂ : Ar = 20: 0 sccm. At this time, in order to keep the substrate temperature constant, heated Ar is allowed to flow on the surface of the 20 sccm substrate. The film forming gas pressure is 0.8 Pa, the film forming power is RF power, and the circular target having a radius of 12 inches is set to 3 kW.

The composition ratio of the silicon nitride film at this time is shown in Table 2. From Table 2, the composition of silicon is 25.0 atomic% to 40 atomic%, and the composition of nitrogen is 35.0a.
It was confirmed that tomic% to 60.0 atomic% is suitable.

The effect of the silicon nitride film will be described below.
Using the sealing sample shown in FIG. 11, the gas barrier characteristics of the silicon nitride film were measured. For the measurement, Sample A (FIG. 11A) in which a sealing can and a polycarbonate (hereinafter referred to as PC) film are sealed with a sealing agent, a sealing can and a silicon nitride film are formed. Sample B (FIG. 11B) in which the PC film was sealed with a sealant
) Was used. Sample A and sample B contain CaO, which is a desiccant.
Is installed. When these were left to stand at atmospheric pressure and room temperature, the change in the weight of the sample was measured. The result is shown in FIG.

Sample A using only PC (FIG. 11A) increases in weight over time, but sample B using PC on which silicon nitride is deposited (FIG. 11B) shows a change in weight. It can be seen from the fact that the silicon nitride film blocks the diffusion of water vapor that has permeated through the PC or moisture absorbed by the PC. From this, TFT
By forming the silicon nitride film of the present invention on the interlayer film made of an organic material formed thereon, water vapor that has passed through the organic material or moisture absorbed by the organic resin is formed through the silicon nitride film. Diffusion to the light emitting layer can be suppressed. A similar effect is that the silicon content ratio is 25.0 atomic% or more and 35.0 atomic% or less,
It can also be found in silicon oxynitride films having a nitrogen content of 35.0 atomic% or more and 65.0 atomic% or less.

Furthermore, the silicon nitride film also has a blocking effect on mobile ions such as Li. FIG.
3 is a result of measuring the MOS-CV characteristics of the TFT. In FIG. 13A, a silicon oxide film is formed on silicon by a thermal oxidation method, and a silicon nitride film is formed thereon by a sputtering method. Then, this element is immersed in a lithium acetate solution to form a LiN film on the surface of the silicon nitride film. The MOS-CV characteristics of the element in which the Al film is formed after forming the film having the above are shown.
On the other hand, FIG. 13B shows an element in which a silicon oxide film is formed on silicon by a thermal oxidation method and then immersed in a lithium acetate solution to form a film having Li on the surface of the silicon oxide film and then an Al film is formed. The MOS-CV characteristics are shown.

MOS-CV characteristics are measured by applying a 1.7 MV voltage application and 150 ° C. heating to the TFT to be evaluated simultaneously for 1 hour, a + BT test, and a −1.7 MV voltage application and 150 ° C. heating simultaneously. 1-hour BT test was performed. In FIG. 13B, during the -BT test, + BT is set to the positive voltage side of the initial voltage-capacity curve.
At the time of the test, the voltage is shifted to the negative voltage side from the initial voltage-capacitance curve, so that it can be seen that Li in the silicon oxide film moves between the silicon surface and Al by the BT test. On the other hand, in FIG. 13A, since the voltage-capacity curve of the + BT test is almost the same as the initial voltage-capacity curve, Li may not move between the silicon surface and Al. It can be seen that the silicon nitride film hinders the movement of Li in the silicon oxide film. From this, the EL element in which the silicon nitride film of the present invention is formed on the organic material on the TFT is the Li element used for the cathode material of the EL element.
It is possible to suppress the diffusion and movement of mobile ions such as
It is possible to prevent the FT threshold from fluctuating and the TFT characteristics from becoming unstable. The same effect is also observed in a silicon oxynitride film having a silicon content ratio of 25.0 atomic% to 35.0 atomic% and a nitrogen content ratio of 35.0 atomic% to 65.0 atomic%.

“Embodiment 3”
Here, an example is shown in which a TFT is formed on the surface of an insulating substrate, an interlayer insulating film made of an organic material is formed thereon, and a carbon film is used by sputtering in contact with the film.

As a typical example of the carbon film used here, a DLC film is applied. The DLC film has an SP ³ bond as a bond between carbons in a short-range order, but has a macroscopic amorphous structure. The composition of the DLC film is 95 to 70 atoms of carbon.
ic%, hydrogen is 5-30 atomic%, very hard and excellent in insulation. Such a DLC film is characterized by low gas permeability such as water vapor and oxygen.
The blocking property against oxygen and water vapor can be enhanced. DLC in that case
The thickness of the film is 5 to 500 nm. Moreover, it is 15-2 by the measurement with a micro hardness meter.
It is known to have a hardness of 5 GPa.

Further, the DLC film can be formed with good adhesion without heating the substrate on which the interlayer insulating film made of TFT and organic material is formed. Also in the sputtering method, a dense and hard film can be formed by using ion bombardment to some extent.

By forming an inorganic insulating film or a carbon film on an interlayer insulating film made of an organic material by the method described in “Embodiment 1” to “Embodiment 3”, oxygen from the interlayer insulating film side is formed. , Moisture can be prevented from entering the light emitting element side, and deterioration of the light emitting element can be prevented. In addition, movable ions from the light emitting element are TFT
It is also possible to prevent diffusion to the side, and it is possible to suppress fluctuations in the TFT threshold. Accordingly, it is possible to suppress the occurrence of dark spots and a decrease in luminance in the light emitting device, and the reliability of the TFT used in the light emitting device can be increased.

In the embodiments shown below, a laminated structure in which acrylic is used for an interlayer insulating film made of the organic material and a silicon oxynitride film or a silicon nitride film is used for the inorganic insulating film is a TFT.
An example used in the process is shown.

A detailed description will be given with reference to the following examples. Here, TF used for light-emitting device
An example of forming a T substrate is shown.

In FIG. 2A, a glass substrate or a quartz substrate is used as the substrate 401.
In the case of using a glass substrate, a base film 402 made of an insulating film is formed on the substrate surface in order to prevent impurity diffusion from the substrate.

Next, a semiconductor layer 403 having an amorphous structure with a thickness of 25 to 80 nm (preferably 30 to 60 nm) is formed by a known method such as a plasma CVD method or a sputtering method, and a crystallization step is performed. A crystalline semiconductor layer is formed from the crystalline semiconductor layer.

As a crystallization method, a laser annealing method, a thermal annealing method (solid phase growth method), or a rapid thermal annealing method (RTA method) can be applied. When the laser annealing method is used, if the semiconductor layer is thick, the heat capacity at the time of laser irradiation increases and damage to the substrate also increases.

A catalyst may be used as a method for crystallizing the semiconductor layer. Nickel (Ni) is effective as an example of the catalyst element.

At this time, the layer containing the catalytic element is formed by a spin coating method in which the aqueous solution is applied by rotating the substrate with a spinner. Then, using a furnace annealing furnace, thermal annealing is performed at 550 to 600 ° C. for 1 to 8 hours in a nitrogen atmosphere. Through the above steps, a crystalline semiconductor layer made of a crystalline silicon film can be obtained.

Further, as a means for removing the catalyst element, there is a means for utilizing a gettering action by phosphorus (P). At this time, P is added to the region where Ni is segregated by doping. In order to achieve good gettering with P, 1.5 × 10 ²⁰ atomic / cm ³ or more is preferable. In addition to phosphorus (P), means utilizing the gettering action by argon (Ar) can be used. For example, 1 × 10 ²⁰ atomic / cm ³ or more of argon (Ar) is added to the region where the catalytic element is to be segregated. As means for adding the argon (Ar), in addition to accelerated implantation by doping, there may be mentioned a method in which the region is formed by sputtering silicon using argon (Ar) as a sputtering gas. The region to which the argon (Ar) is added is phosphorus (P).
May be included. After forming the Ni segregating region, the catalytic element can be gettered to the Ni segregating region by thermal annealing.

Then, a resist pattern is formed on the crystalline semiconductor layer using a photolithography technique, the crystalline semiconductor layer is divided into islands by dry etching,
As shown in FIG. 2B, an island-shaped semiconductor layer 404 is formed. For the island-shaped semiconductor layer 404, an impurity element imparting p-type is added at a concentration of about 1 × 10 ^{16 to} 5 × 10 ¹⁷ atomic / cm ³ for the purpose of controlling the threshold voltage (Vth) of the TFT. It may be added to the entire surface of the semiconductor layer.

The gate insulating film 405 is formed of an insulating film containing silicon with a film thickness of 40 to 150 nm by using a plasma CVD method or a sputtering method. When a plasma CVD method or a sputtering method is used as this embodiment, good characteristics can be obtained by treating the surface of the semiconductor layer in an H ₂ atmosphere before film formation.

Then, as shown in FIG. 2C, a tantalum nitride film 406 and a tungsten film 407 for forming a gate electrode are formed over the gate insulating film. In this embodiment, tantalum nitride is formed to a thickness of 30 nm, and tungsten is formed to a thickness of 300 to 400 nm. The tantalum nitride film is formed by sputtering, and the Ta target is A.
Sputter with r and N ₂ . In the case of forming a tungsten film, it is formed by a sputtering method using tungsten as a target.

Next, a resist mask 501 is formed and a first electrode for forming a gate electrode is formed.
Etching process is performed. This process is shown using FIG. Although there is no limitation on the etching method, preferably, an ICP (Inductively Coupled Plasma) etching method is used, and CF ₄ and Cl ₂ are mixed in the etching gas, and 0.5 to
Plasma is generated by applying 500 W of RF (13.56 MHz) power to the coil electrode at a pressure of 2 Pa, preferably 1 Pa. 100 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. C
When F ₄ and Cl ₂ are mixed, the tungsten film and the tantalum nitride film are etched to the same extent.

Under the above etching conditions, by making the shape of the mask made of resist suitable, the end of the tantalum nitride film 503 and the tungsten film 502 is tapered at an angle of 15 to 45 ° by the effect of the bias voltage applied to the substrate side. It becomes a shape. 10-20% for etching without leaving residue on the gate insulating film
It is preferable to increase the etching time at a certain rate. (Fig. 3 (a))

Next, a second etching process is performed. Similarly, using ICP etching, CF ₄ , Cl ₂ and O ₂ are mixed in the etching gas, and 50 Pa is applied to the coil-type electrode at a pressure of 1 Pa.
Supplying 0W RF power (13.56MHz) and generating plasma. 50 W RF (13.56 MHz) power is applied to the substrate side (sample stage), and a lower self-bias voltage is applied than in the first etching process. Under such conditions, the tungsten film is anisotropically etched, and at the same time, the region 505 not covered with the tantalum nitride film 504 is further etched by about 20 to 50 nm to form a thinned region. After this,
If the tantalum nitride film as the first conductive layer is anisotropically etched at a slower etching rate, a conductive layer as shown in FIG. 3C is formed.

In this embodiment, tantalum nitride and tungsten are exemplified as the gate electrode material, but other conductive materials may be used as long as the shape as shown in FIG. 3B is formed. For example,
Two suitable metals or alloys having different etch rates may be used from Ta, Mo, WN, crystalline silicon, Ti, Nb, or 4A-6A group.

Then, as shown in FIG. 3C, P is added by the first impurity addition method. The doping method may be an ion doping method or an ion implantation method. In this embodiment, the thickness of the gate insulating film is 90 nm, and the conditions of the ion doping method are an acceleration voltage of 80 kV and a dose of 1.5 × 10 ¹⁵ atomic / cm ² . Then, the first impurity region 506 and the second impurity region 507 are formed in a self-aligned manner. P of about 2.0 × 10 ¹⁸ atomic / cm ³ is added to the first impurity region 506. P of about 1.7 × 10 ²⁰ atomic / cm ³ is added to the second impurity region 507. (Fig. 4
b).

The first impurity region 506 formed in this manner is an LDD region and can improve reliability. The electric field when driving the TFT is relaxed by the thickness of the gate insulating film and the length in the source-drain direction in the first impurity region,
And since there is an optimum value that lowers the electron temperature of carriers in the semiconductor layer, the concentration is TF
It should be considered according to T.

Next, as shown in FIG. 4C, the island-shaped semiconductor layer forming the n-channel TFT is
A resist mask is formed to cover the entire surface. If the resist is formed with a thickness of 500 nm, when an impurity is added, the amount reaching the element is smaller than the amount added to the first impurity region. In this embodiment, it is formed with a thickness of 1000 nm.

Then, high-concentration p-type impurity regions serving as a source region and a drain region are formed in the island-shaped semiconductor layer forming the p-channel TFT. Here, an impurity element imparting p-type is added as a gate electrode mask, and a high-concentration p-type impurity region is formed in a self-aligning manner. The impurity region formed here is formed by an ion doping method using diborane (B ₂ H ₆ ). The boron concentration in the high-concentration p-type impurity region that does not overlap with the gate electrode is set to 3 × 10 ^{20 to} 3 × 10 ²¹ atomic / cm ³ . The impurity region overlapping with the first gate electrode is substantially formed as a low-concentration p-type impurity region because the impurity element is added through the gate insulating film and the first gate electrode, and at least 1.5 p. The concentration is × 10 ¹⁹ atomic / cm ³ or more.

P is added to the high-concentration p-type impurity region and the low-concentration p-type impurity region in the previous step, and the high-concentration p-type impurity region is 1 × 10 ²⁰ to 1 × 10 ²¹ atomic.
/ a concentration of cm ^3, and the low-concentration p-type impurity region containing a concentration of ^{1 × 10 16 ~1 × 10 19} atomic / cm 3 , but the concentration of boron (B) to be added in this step P Concentration 1.
By making it 5 to 3 times, no problem occurred because it functions as the source region and drain region of the p-channel TFT.

FIG. 5A shows a cross section of the TFT in which the LDD region 601 is formed. FIG. 5 shows an n-channel TFT and a p-channel TFT in the same diagram for simplification. Thereafter, as shown in FIG. 5B, sputtering or plasma CV
A first interlayer insulating film 602 is formed from above the gate electrode and the gate insulating film by the D method. The first interlayer insulating film 602 includes a silicon oxide film, a silicon oxynitride film, a silicon nitride film,
Alternatively, a stacked film formed by combining them may be formed. Here, plasma CVD
A silicon oxynitride film was formed to 500 nm.

Thereafter, a step of activating the impurity element imparting n-type or p-type added at an appropriate concentration is performed. In this embodiment, the heat treatment was performed at 550 ° C. for 4 hours. However, when the substrate does not have heat resistance, a laser annealing method or an RTA method can be applied.

Subsequent to the activation step, the step of hydrogenating the island-like semiconductor layer by changing the atmospheric gas and performing heat treatment at 300 to 450 ° C. for 1 to 12 hours in an atmosphere containing 3 to 100% hydrogen. Do. As another means of hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) may be performed.

After the activation and hydrogenation steps are completed, a second interlayer insulating film 603 made of an organic material is formed with an average thickness of 1.0 to 2.0 μm as shown in FIG.
Organic materials include polyimide, acrylic, polyamide, polyimide amide, B
CB (benzocyclobutene) or the like can be used.

Thus, the surface can be satisfactorily planarized by forming the second interlayer insulating film 603 from an organic material. In addition, since the organic material 603 generally has a low dielectric constant, parasitic capacitance can be reduced. However, since it is hygroscopic and not suitable as a protective film, it is preferably used in combination with a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or the like formed as the first interlayer insulating film 602 as in this embodiment. .

Thereafter, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed by a sputtering method, and a third interlayer insulating film 604 is formed. In this embodiment, a silicon nitride film is formed to a thickness of about 100 nm on the third interlayer insulating film. The target was silicon, and the deposition gas and flow rate were N ₂ : H ₂ : N ₂ O = 31: 5: 4 sccm. The film forming gas pressure was 0.4 Pa, the film forming power was RF power, and a circular target having a radius of 12 inches was set to 3 kW.

Although the film forming gas and flow rate are set to N ₂ O = 4 sccm, when the range of film forming conditions is sufficiently wide against deterioration by moisture or oxygen, the composition of oxygen in the film is increased by increasing the N ₂ O flow rate. It is preferable to increase the ratio and increase the transmittance. In this embodiment, the third interlayer insulating film is formed of a silicon oxynitride film. However, when a light emitting material that is very easily deteriorated by moisture or oxygen is used, the silicon oxynitride film is used instead. It is preferable to use a silicon nitride film. The film formation conditions at this time are silicon for the target, and the film formation gas and flow rate are such that the flow rate of N ₂ is 20 sccm. The film forming gas pressure is 0.8 Pa, the film forming power is an RF power source, and a circular target having a radius of 12 inches is set to 3 kW.

Thereafter, contact holes reaching the source region or the drain region formed in each island-shaped semiconductor layer are formed. Contact holes are formed by dry etching. In this case, the third interlayer insulating film 604 is etched using CF ₄ and O ₂ as the etching gas, and then the second interlayer insulating film 603 made of an organic material using a mixed gas of CF ₄ , O ₂ and He as the etching gas. First, the first interlayer insulating film 602 is etched using CF ₄ and O ₂ as etching gases, and then the gate insulating film is etched.

Then, a conductive metal film is formed by sputtering or vacuum deposition, a resist mask pattern is formed, and etching is performed to form source and drain wirings 60.
5 is formed. In this embodiment, a Ti film is formed, a titanium nitride film is formed thereon, Al is further formed, and a Ti film or a tungsten film is further formed to have a four-layer structure, and the entire thickness is set to 500 nm.

Thereafter, a transparent conductive film 606 is formed on the entire surface, and a pixel electrode is formed by a patterning process and an etching process. The pixel electrode is formed on a second interlayer insulating film made of an organic material, and a portion overlapping the drain wiring of the pixel TFT is provided to form an electrical connection.

As the material of the transparent conductive film 606, indium oxide (In ₂ O ₃ ), indium oxide tin oxide alloy (In ₂ O ₃ —SnO ₂ ; ITO), or the like is used by using a sputtering method, a vacuum evaporation method, or the like. Can do. Etching treatment of such a material is performed with a hydrochloric acid based solution. When ITO is formed, if the substrate is at room temperature and is not crystallized by flowing hydrogen or water as a sputtering gas, the etching treatment can be performed with an acid-based solution such as hydrofluoric acid. In this case, the substrate is 160-3 in a later process.
Heat treatment can be performed at 00 ° C. for one hour or longer to crystallize the ITO and increase the transmittance.

  Through the above steps, a TFT substrate for forming a light emitting device is completed.

In this embodiment, a manufacturing process for forming a TFT over a plastic substrate will be described below with reference to FIGS.

First, a plastic substrate 201 made of an organic material is prepared. In this embodiment, a substrate 201 made of polyimide is used. The heat resistant temperature of the polyimide substrate is about 399 ° C., and the color of the substrate itself is not transparent but brown. Next, a base insulating film 202 is formed over the substrate 201. The base insulating film is not particularly limited as long as it is a film forming method in which the process temperature is in a temperature range in which the plastic substrate is not deformed, preferably in a temperature range not exceeding 300 ° C., and here, the base insulating film is formed by using a sputtering method. In this sputtering method, since the film is formed in an atmosphere that does not contain hydrogen in the sputtering gas, the amount of hydrogen in the film is 5 atomic% or less.

Next, an amorphous semiconductor film is formed and crystallized by laser irradiation to form a crystalline semiconductor film. The amorphous semiconductor film is not particularly limited as long as it is a film formation method in which the process temperature is in a temperature range in which the plastic substrate is not deformed, preferably in a temperature range not exceeding 300 ° C., and here, the amorphous semiconductor film is formed by using a sputtering method. Next, the semiconductor layer 203 is formed by patterning the crystalline semiconductor film into a desired shape.

Next, a gate insulating film 204 that covers the semiconductor layer 203 is formed. The gate insulating film is formed by a sputtering method (FIG. 10A). At this time, the silicon target is formed by sputtering using argon, oxygen, hydrogen, and N ₂ O as sputtering gases.

Next, the gate electrode 205 is formed. (FIG. 10B) The gate electrode 205 is formed of an element selected from Ta, W, Ti, Mo, Al, Cu, Cr, and Nd, or an alloy material or a compound material containing the element as a main component. May be. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. Further, an AgPdCu alloy may be used.

Next, the gate insulating film is etched in a self-aligning manner using the gate electrode as a mask to form the gate insulating film 206, and an impurity element which imparts n-type to a part of the semiconductor layer after exposing a part of the semiconductor layer Here, impurity regions 207 are formed by doping phosphorus (FIG. 10C). At this time, a resist is formed on the p-channel TFT, and is peeled off after the addition of the impurity imparting the p-type.

Next, the gate insulating film is etched in a self-aligning manner using the gate electrode as a mask to form the gate insulating film, and an impurity element that imparts p-type to a part of the semiconductor layer after exposing a part of the semiconductor layer, Here, an impurity region 208 is formed by doping boron (FIG. 10D). At this time, a resist is formed on the n-channel TFT, and is peeled off after the impurity imparting the p-type is added.

In this example, doping was performed after etching the gate insulating film.
After forming the gate electrode, doping may be performed by passing through the gate insulating film. In this case, the impurity element passes through the gate insulating film and is doped in a self-aligned manner using the gate electrode as a mask.

Next, as in Example 1, an interlayer insulating film 210a made of acrylic and an interlayer insulating film 210b containing silicon as a main component are formed. At this time, the substrate temperature does not exceed 300 ° C., and the substrate does not deform.

Next, after a contact hole reaching the source region or the drain region is formed, a source wiring 211 electrically connected to the source region and a pixel electrode 212 electrically connected to the drain region are formed.

Next, hydrogenation is performed to improve TFT characteristics. As this hydrogenation, heat treatment in a hydrogen atmosphere (300 ° C., 1 hour) or plasma hydrogenation is performed at a low temperature.

By the above manufacturing process, the plastic substrate made of an organic material is used in a light emitting device in a temperature range in which the plastic substrate is not deformed, preferably at a process temperature of 300 ° C. or lower.
A top-gate TFT formed on a plastic substrate is completed (FIG. 10 (
E)).

In this example, an example in which an EL (electroluminescence) display device is manufactured using the semiconductor device of Example 1 will be described. 6A is a top view of the EL display device of the present invention, and FIG. 6B is a cross-sectional view thereof.

In FIG. 6A, reference numeral 4001 denotes a substrate, 4002 denotes a pixel portion, 4003 denotes a source side driver circuit, and 4004 denotes a gate side driver circuit.
Through 005, an FPC (flexible printed circuit) 4006 is reached and connected to an external device.

At this time, the first sealant 4101, the cover material 4102, and the filler 4 are formed so as to surround the pixel portion 4002, the source side driver circuit 4003, and the gate side driver circuit 4004.
103 and a second sealing material 4104 are provided.

FIG. 6B corresponds to a cross-sectional view taken along line AA ′ of FIG.
A driving TFT (here, an n-channel TFT and a p-channel TFT are illustrated) 4201 included in the source-side driver circuit 4003 and a current control TFT (light-emitting element) included in the pixel portion 4002 TFT to control current to
4202 is formed.

In this embodiment, the TFT having the same structure as the p-channel TFT or the n-channel TFT in FIG. 4 is used for the driving TFT 4201, and the TFT having the same structure as the p-channel TFT in FIG. 4 is used for the current control TFT 4202. It is done. Further, the pixel unit 40
02, a storage capacitor (not shown) connected to the gate of the current control TFT 4202
Is provided.

On the driving TFT 4201 and the pixel TFT 4202, an interlayer insulating film (planarizing film) 4301a made of a resin material and an interlayer insulating film 4301b mainly composed of silicon and nitrogen, which are features of the present invention, are formed, and a pixel is formed thereon. A pixel electrode (anode) 4302 electrically connected to the drain of the TFT 4202 is formed. Pixel electrode 4302
For example, a transparent conductive film having a large work function is used. As the transparent conductive film, a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. Moreover, you may use what added the gallium to the said transparent conductive film.

An insulating film 4303 is formed over the pixel electrode 4302 and the insulating film 430 is formed.
3, an opening is formed on the pixel electrode 4302. In this opening, an EL (electroluminescence) layer 4304 is formed on the pixel electrode 4302. A known EL material is used for the light emitting layer 4304. There are low molecular (monomer) materials and high molecular (polymer) materials as EL materials, either of which may be used. The light emitting layer may be a composite material of an organic material and an inorganic material.

As a method for forming the light emitting layer 4304, a known vapor deposition technique or coating technique may be used. The structure of the light-emitting layer may be a stacked structure or a single-layer structure by freely combining a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, or an electron injection layer.

Over the light-emitting layer 4304, a conductive film containing an element belonging to Group 1 or Group 2 of the periodic table (
A cathode 4305 is typically formed of a conductive film in which an alkali metal element or an alkaline earth metal element is contained in aluminum, copper, or silver. In addition, it is desirable to remove moisture and oxygen present at the interface between the cathode 4305 and the light emitting layer 4304 as much as possible. Therefore, it is necessary to devise such that the both are continuously formed in a vacuum, or the light emitting layer 4304 is formed in a nitrogen or rare gas atmosphere, and the cathode 4305 is formed without being exposed to oxygen or moisture. In this embodiment, the above-described film formation is possible by using a multi-chamber type (cluster tool type) film formation apparatus.

The cathode 4305 is electrically connected to the wiring 4005 in a region indicated by 4306. A wiring 4005 is a wiring for applying a predetermined voltage to the cathode 4305 and is electrically connected to the FPC 4006 through the anisotropic conductive film 4307.

In this manner, the pixel electrode (anode) 4302, the light emitting layer 4304, and the cathode 43
A light emitting element consisting of 05 is formed. This light emitting element includes a first sealing material 4101 and a cover material 410 bonded to the substrate 4001 by the first sealing material 4101.
2 and enclosed by a filler 4103.

As the cover material 4102, a glass material, a metal material (typically stainless steel),
Ceramic materials and plastic materials (including plastic films) can be used. As plastic materials, FRP (Fiberglass Reinforced Plastics)
) Plate, PVF (polyvinyl fluoride) film, mylar film, polyester film or acrylic resin film. A sheet having a structure in which an aluminum foil is sandwiched between PVF films or mylar films can also be used.

However, when the light emission direction from the light emitting element is directed toward the cover material, the cover material must be transparent. In that case, a transparent material such as a glass plate, a plastic plate, a polyester film or an acrylic film is used.

As the filler 4103, an ultraviolet curable resin or a thermosetting resin can be used, and PVC (polyvinyl chloride), acrylic, polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral), or EVA (ethylene vinyl acetate) is used. Can be used. When a hygroscopic substance (preferably barium oxide) or a substance capable of adsorbing oxygen is provided inside the filler 4103, deterioration of the light-emitting element can be suppressed.

Further, the filler 4103 may contain a spacer. At this time, if the spacer is formed of barium oxide, the spacer itself can be hygroscopic. In the case where a spacer is provided, it is also effective to provide a resin film on the cathode 4305 as a buffer layer that relieves pressure from the spacer.

The wiring 4005 is electrically connected to the FPC 4006 through the anisotropic conductive film 4307. The wiring 4005 includes a pixel portion 4002 and a source side driver circuit 400.
3 and the signal sent to the gate side driving circuit 4004 are transmitted to the FPC 4006, and the FP
It is electrically connected to an external device by C4006.

In this embodiment, the second seal member 4104 is provided so as to cover the exposed portion of the first seal member 4101 and a part of the FPC 4006 so that the light emitting element is thoroughly shielded from the outside air. Thus, an EL display device having the cross-sectional structure of FIG.

Here, FIG. 7 shows a more detailed cross-sectional structure of the pixel portion, FIG. 8A shows a top structure, and FIG. 8B shows a circuit diagram. 7, 8 </ b> A, and 8 </ b> B use common reference numerals and may be referred to each other.

In FIG. 7, a switching TFT 4402 provided over a substrate 4401 is formed using the n-channel TFT in FIG. Therefore, the description of the n-channel TFT may be referred to for the description of the structure. A wiring indicated by 4403 is a gate wiring that electrically connects the gate electrodes 4404 a and 4404 b of the switching TFT 4402.

Note that although a double gate structure in which two channel formation regions are formed is used in this embodiment, a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed may be used.

Further, the drain wiring 4405 of the switching TFT 4402 has a current control T
The gate electrode 4407 of the FT 4406 is electrically connected. Note that the current control TFT 4406 is formed using the p-channel TFT 301 of FIG. Therefore, the description of the structure may be referred to the description of the p-channel TFT 301. In this embodiment, a single gate structure is used, but a double gate structure or a triple gate structure may be used.

A first passivation film 4408 is provided on the switching TFT 4402 and the current control TFT 4406, and a planarizing film 4409 made of resin is formed thereon.
a is formed. It is very important to flatten the step due to the TFT using the flattening film 4409. Since the light emitting layer formed later is very thin, the presence of a step may cause a light emission failure. Therefore, it is desirable to planarize the pixel electrode before forming it so that the light emitting layer can be formed as flat as possible. An interlayer insulating film 4409b containing silicon and nitrogen as main components, which is a feature of the present invention, is formed on the planarizing film 4409a made of resin.

Reference numeral 4410 denotes a pixel electrode (anode of the light emitting element) made of a transparent conductive film, which is electrically connected to the drain wiring of the current control TFT 4406. As the transparent conductive film, a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. Also,
You may use what added the gallium to the said transparent conductive film.

A light emitting layer 4411 is formed over the pixel electrode 4410. Although only one pixel is shown in FIG. 7, in this embodiment, light emitting layers corresponding to each color of R (red), G (green), and B (blue) are separately formed. In this embodiment, a low molecular organic EL material is formed by a vapor deposition method. Specifically, a copper phthalocyanine (CuPc) film having a thickness of 20 nm is provided as a hole injection layer, and a Tris-8 film having a thickness of 70 nm is formed thereon as a light emitting layer.
It is a laminated structure provided with a quinolinolato aluminum complex (Alq ₃ ) film. A
quinacridone lq _3, it is possible to control the luminescent color by adding a fluorescent dye such as perylene or DCM1.

However, the above example is an example of an EL material that can be used as a light emitting layer.
There is no need to limit it to this. A light emitting layer (a layer for emitting light and moving carriers therefor) may be formed by freely combining a light emitting layer, a charge transport layer, or a charge injection layer. For example, in this embodiment, an example in which a low molecular weight organic EL material is used for the light emitting layer is shown, but a high molecular weight organic EL material may be used. It is also possible to use an inorganic material such as silicon carbide for the charge transport layer or the charge injection layer. As these organic EL materials and inorganic materials, known materials can be used.

Next, a cathode 4412 made of a conductive film is provided over the light emitting layer 4411. In this embodiment, an alloy film of aluminum and lithium is used as the conductive film. Of course, a known MgAg film (magnesium and silver alloy film) may be used. As the cathode material, a conductive film made of an element belonging to Group 1 or Group 2 of the periodic table or a conductive film added with these elements may be used.

When the cathode 4412 is formed, the light emitting element 4413 is completed. In addition,
Here, the light-emitting element 4413 refers to a capacitor formed with a pixel electrode (anode) 4410, a light-emitting layer 4411, and a cathode 4412.

Next, the top structure of the pixel in this embodiment is described with reference to FIG. The source of the switching TFT 4402 is connected to the source wiring 4415, and the drain is connected to the drain wiring 4405. The drain wiring 4405 is electrically connected to the gate electrode 4407 of the current control TFT 4406. The source of the current control TFT 4406 is electrically connected to the current supply line 4416, and the drain is electrically connected to the drain wiring 4417. The drain wiring 4417 is electrically connected to a pixel electrode (anode) 4418 indicated by a dotted line.

At this time, a storage capacitor is formed in the region indicated by 4419. Retention capacity 44
19 is formed between the semiconductor film 4420 electrically connected to the current supply line 4416, the insulating film (not shown) in the same layer as the gate insulating film, and the gate electrode 4407. Further, a capacitor formed by the gate electrode 4407, the same layer (not shown) as the first interlayer insulating film, and the current supply line 4416 can also be used as the storage capacitor.

In this embodiment, an EL display device having a pixel structure different from that in Embodiment 3 will be described. FIG. 9 is used for the description. In addition, what is necessary is just to refer description of Example 3 about the part to which the code | symbol same as FIG. 8 is attached | subjected.

In FIG. 9, a TFT having the same structure as the n-channel TFT 302 in FIG. 4 is used as the current control TFT 4501. Of course, the gate electrode 45 of the current control TFT 4501.
02 is electrically connected to the drain wiring 4405 of the switching TFT 4402. Further, the drain wiring 4503 of the current control TFT 4501 is electrically connected to the pixel electrode 4504.

In this embodiment, the pixel electrode 4504 made of a conductive film functions as a cathode of the light emitting element. Specifically, an alloy film of aluminum and lithium is used.
A conductive film made of an element belonging to Group 2 or Group 2 or a conductive film added with these elements may be used.

A light emitting layer 4505 is formed over the pixel electrode 4504. Although only one pixel is shown in FIG. 9, a light emitting layer corresponding to G (green) is formed by a vapor deposition method and a coating method (preferably a spin coating method) in this embodiment. In particular,
A 20 nm thick lithium fluoride (LiF) film is provided as an electron injection layer, and a 70 nm thick PPV (polyparaphenylene vinylene) film is provided thereon as a light emitting layer.

Next, an anode 4506 made of a transparent conductive film is provided on the light emitting layer 4505. In this embodiment, a conductive film made of a compound of indium oxide and tin oxide or a compound of indium oxide and zinc oxide is used as the transparent conductive film.

When the anode 4506 is formed, a light emitting element 4507 is completed. In addition,
The light-emitting element 4507 here refers to a capacitor formed of a pixel electrode (cathode) 4504, a light-emitting layer 4505, and an anode 4506.

When the voltage applied to the light emitting element is a high voltage of 10 V or more, the current control TF
At T4501, deterioration due to the hot carrier effect becomes obvious. In such a case, the n-channel TFT having the structure of the present invention is used as the current control TFT 4501.
It is effective to use

In addition, the current control TFT 4501 of this embodiment forms a parasitic capacitance called a gate capacitance between the gate electrode 4502 and the LDD region 4509. By adjusting the gate capacitance, a function equivalent to that of the storage capacitor 4418 shown in FIGS. 8A and 8B can be provided. In particular, when the EL display device is operated by the digital drive method, the storage capacitor can be replaced with a gate capacitor because the capacitance of the storage capacitor is smaller than that when the EL display device is operated by the analog drive method.

When the voltage applied to the light emitting element is 10 V or less, preferably 5 V or less,
Since deterioration due to the hot carrier effect is not a problem, an n-channel TFT having a structure in which the LDD region 4509 is omitted in FIG. 9 may be used.

The figure which shows the transmittance | permeability of the silicon nitride film and silicon nitride film which were formed into a film by sputtering method. 4A to 4D illustrate a method for manufacturing a semiconductor device used for a light-emitting element of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device used for a light-emitting element of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device used for a light-emitting element of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device used for a light-emitting element of the present invention. 8A and 8B illustrate an EL display device using the present invention. FIG. 6 illustrates a structure of a pixel portion. FIG. 6A illustrates a structure of a pixel portion. And a circuit diagram (B). FIG. 6 illustrates a structure of a pixel portion. 4A to 4D illustrate a method for manufacturing a semiconductor device used for a light-emitting element of the present invention. The figure explaining the measurement conditions of the moisture absorption blocking effect of the silicon nitride film formed into a film by sputtering method. The figure explaining the moisture absorption blocking effect of the silicon nitride film formed into a film by sputtering method. The figure explaining the Li blocking effect of the silicon nitride film formed into a film by sputtering method.

Claims (15)

A light emitting element having a light emitting layer between a pair of electrodes;
An inorganic insulating film mainly comprising silicon and nitrogen provided below the light emitting element,
The inorganic insulating film has a silicon content ratio of 25.0 atomic% or more and 40.0 atomic% or less, and a nitrogen content ratio of 35.0 atomic% or more and 65.0 atomic% or less. . A light emitting element having a light emitting layer between a pair of electrodes;
An inorganic insulating film mainly comprising silicon and nitrogen provided below the light emitting element,
The light emitting element includes mobile ions;
The inorganic insulating film has a silicon content ratio of 25.0 atomic% or more and 40.0 atomic% or less, and a nitrogen content ratio of 35.0 atomic% or more and 65.0 atomic% or less. . A light emitting element having a light emitting layer between a pair of electrodes;
An inorganic insulating film mainly comprising silicon and nitrogen provided below the light emitting element,
The inorganic insulating film contains argon, the silicon content ratio is 25.0 atomic% or more and 40.0 atomic% or less, and the nitrogen content ratio is 35.0 atomic% or more and 65.0 atomic% or less. Light-emitting device. A light emitting element having a light emitting layer between a pair of electrodes;
An inorganic insulating film mainly comprising silicon and nitrogen provided below the light emitting element,
The light emitting element includes mobile ions;
The inorganic insulating film contains argon, the silicon content ratio is 25.0 atomic% or more and 40.0 atomic% or less, and the nitrogen content ratio is 35.0 atomic% or more and 65.0 atomic% or less. Light-emitting device. A light emitting element having a light emitting layer between a pair of electrodes;
An inorganic insulating film having silicon and nitrogen as one of the main components provided below the light emitting element;
An interlayer insulating film provided below the inorganic insulating film;
A thin film transistor provided below the interlayer insulating film and electrically connected to the light emitting element,
The inorganic insulating film has a silicon content ratio of 25.0 atomic% or more and 40.0 atomic% or less, and a nitrogen content ratio of 35.0 atomic% or more and 65.0 atomic% or less. . A light emitting element having a light emitting layer between a pair of electrodes;
An inorganic insulating film having silicon and nitrogen as one of the main components provided below the light emitting element;
An interlayer insulating film provided below the inorganic insulating film;
A passivation film provided below the interlayer insulating film;
A thin film transistor provided below the passivation film and electrically connected to the light emitting element;
The inorganic insulating film has a silicon content ratio of 25.0 atomic% or more and 40.0 atomic% or less, and a nitrogen content ratio of 35.0 atomic% or more and 65.0 atomic% or less. . In claim 6,
The light-emitting device, wherein the passivation film is a silicon oxide film, a silicon oxynitride film, or a silicon nitride film. In any one of Claims 5 thru | or 7,
The light-emitting device, wherein the interlayer insulating film is a film made of an organic resin. In any one of Claims 5 thru | or 7,
The light-emitting device, wherein the interlayer insulating film is a film containing siloxane. In any one of Claims 5 thru | or 7,
The light-emitting device, wherein the interlayer insulating film is a film having a dielectric constant smaller than 3.8. In any one of Claims 5 thru | or 7,
The light-emitting device, wherein the inorganic insulating film containing silicon and nitrogen as main components contains argon. In any one of Claims 5 thru | or 11,
The light-emitting device, wherein the light-emitting element includes movable ions. In any one of Claims 2 and 4 to 12,
The light-emitting device, wherein the movable ion is lithium. In any one of Claims 1 thru | or 13,
The light-emitting device includes an element belonging to Group 1 or Group 2 of the periodic table. In any one of Claims 1 thru | or 14,
The light-emitting device, wherein the inorganic insulating film containing silicon and nitrogen as one of main components is a silicon nitride film or a silicon nitride oxide film.

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