TWI484863B - Light emitting device and electronic apparatus - Google Patents

Description

Light-emitting device and electronic device

The present invention relates to a light-emitting device using a light-emitting element such as an organic EL (electroluminescence) element.

A plurality of light-emitting elements are arranged in an effective range on the substrate, and light-emitting devices such as various wirings are disposed in a range around the effective range. Each of the light-emitting elements has a light-emitting layer formed of a light-emitting material such as an organic EL material held between the first electrode and the second electrode. In many cases, the second electrode is a common electrode provided in common to a plurality of light-emitting elements, and is provided over the entire effective range. However, the impedance of the electrode itself is lower in the surface of the electrode, and the voltage is lowered in the surface of the electrode. The potential applied to the light-emitting element is uneven through the position of the substrate, and the brightness of the light-emitting element may be uneven due to the position. Here, in the related art, a material having a lower resistance than the common electrode is formed, and the auxiliary electrode electrically connected to the common electrode is used to lower the impedance of the common electrode (for example, Patent Document 1).

[Patent Document] Japanese Patent Laid-Open Publication No. 2002-352963

However, the auxiliary electrode is formed by, for example, a light-blocking member such as an aluminum film. Therefore, in order not to shield the light emitted from the light-emitting element, it is desirable to form the range of the gap of the light-emitting element, and it is desirable to use high precision. The location mechanism is formed. On the other hand, the common electrode is formed of a light transmissive material, and is formed in the same range as the entire effective range of the coating. Therefore, the tolerance of the positioning can be obtained as compared with the auxiliary electrode. Therefore, the error in common electrode positioning becomes a problem compared to the auxiliary electrode. Therefore, in order to absorb the error of the common electrode, it is desirable to sufficiently ensure the width of the peripheral range (i.e., the frame range) on the substrate, and the device is prevented from being miniaturized.

Further, a circuit element such as a transistor for controlling light emission of the light-emitting element is disposed under the common electrode or the auxiliary electrode. Therefore, an insulating layer is provided between the common electrode and the auxiliary electrode, and the common electrode and the auxiliary electrode are insulated by the circuit element. However, when the insulating layer includes a step, the portion overlapping the step with the step may cause a break or crack in the electrode. The occurrence of a broken wire or a crack may increase the impedance of the electrode, and the brightness of the light-emitting element may become uneven.

The present invention has been made in view of the above circumstances, and it is possible to provide a light-emitting device capable of suppressing uneven brightness of a light-emitting element while reducing the range of the light-emitting device frame.

In order to solve the above problems, the first light-emitting device of the present invention has an effective range of a plurality of light-emitting elements arranged on a substrate and a peripheral range surrounding the effective range, and each of the light-emitting elements has a first electrode and a second electrode. a light-emitting layer between the electrodes, wherein the second electrode is provided in common to the plurality of light-emitting elements, and has a light-emitting layer of an element layer of a circuit element for controlling light emission of the light-emitting element, and is characterized in that: the second electrode The auxiliary electrode that is electrically connected is disposed on the upper layer of the element layer, and has a portion in which the second electrode and the auxiliary electrode are disposed on the lower layer, and the second electrode and the auxiliary electrode are provided from the circuit element. In the insulating insulating layer, the second electrode covers the effective range and overflows in the peripheral range, and is formed in one form. The auxiliary electrode is formed in the peripheral range by the gap of the plurality of light-emitting elements in the effective range. In some of the peripheral ranges, the end of the second electrode is located in the plane of the substrate, and is located further inside than the end of the auxiliary electrode and the end of the insulating layer.

In the light-emitting device of the present invention, the end of the auxiliary electrode is disposed outside the end of the common electrode. Further, the auxiliary electrode is formed in the effective range and formed by the gap of the light-emitting element. For this reason, it is desirable to form using a high-precision positioning mechanism. In this regard, the common electrode is formed in the same range as the entire effective range of the coating, and the positioning accuracy is not required to be the auxiliary electrode when the common electrode is formed. That is, there are many cases where the auxiliary electrode is formed with an error that is extremely small in total co-energization. Therefore, according to the present invention, compared with the configuration in which the end of the common electrode is disposed on the outer side of the auxiliary electrode, the error of the auxiliary electrode can be reduced, and the size of the frame can be reduced, and the size of the device can be reduced. Then, the auxiliary electrode is configured to have a lower impedance than the second electrode. In particular, the auxiliary electrode is preferably formed of a low-impedance material than the second electrode.

Further, in the light-emitting device of the present invention, the end of the common electrode is disposed on the inner side of the end of the insulating layer. The insulating layer is, for example, a circuit step flattening film, and is formed by flattening the lower layer convex and concave thickening. Therefore, the end of the insulating layer becomes a large step. In this regard, the common electrode is formed of a brittle material. Or there are many cases where the thinner one is formed, and there is a case where the common electrode is broken or cracked due to the step of the end of the insulating layer. However, in the present invention, the end of the common electrode is disposed on the inner side of the end of the insulating layer, and the common electrode can be prevented from being broken or cracked. Therefore, it is possible to prevent an increase in the impedance value caused by the disconnection or cracking. Therefore, unevenness in luminance of the light-emitting element can be suppressed. In a preferred aspect of the invention, the second electrode is preferably disposed on the lower layer of the auxiliary electrode. According to this aspect, the second electrode can be protected by the outside air.

Furthermore, the second light-emitting device of the present invention belongs to a light-emitting device having an effective range in which a plurality of light-emitting elements are arranged and a peripheral range surrounding the effective range, and is provided corresponding to each of the plurality of light-emitting elements. a plurality of first electrodes and a second electrode common to the plurality of light-emitting elements, and intervening in the light-emitting layers of the plurality of first electrodes and the second electrodes, and the auxiliary electrodes electrically connected to the second electrodes And an element layer configured to control the light-emitting circuit element of the light-emitting element, and an insulating layer between the second electrode or the auxiliary wiring and the element layer, wherein the second electrode is provided to include the entire effective range and the peripheral range In the first range of at least a part of the first insulating layer, the entire effective range is overlapped with the first range, and the second range is overflowed in the first direction from the first range in the peripheral range. The auxiliary electrode is disposed in the gap of the plurality of light-emitting elements by the effective range, and the peripheral range is In the range of the inside of the first range and the outside of the first range, and the range of the inside of the second range, the range of the second range is reached. Set on the outside.

In the second light-emitting device described above, the auxiliary electrode is disposed outside the first range in which the common electrode is provided. Therefore, the end of the auxiliary electrode is disposed outside the end of the common electrode. Further, since the auxiliary electrode is in the effective range and formed by the gap of the light-emitting element, a high-precision positioning mechanism is used in the formation of the auxiliary electrode. In this regard, the common electrode is formed in one form in the entire range of the effective range of the coating. When the common electrode is formed, the positioning accuracy does not need to be an auxiliary electrode. Therefore, since the error of the auxiliary electrode is extremely smaller than the total energization, according to the present invention, the end of the auxiliary electrode is disposed closer to the outer side than the end of the auxiliary electrode, and the error of the auxiliary electrode can be reduced, thereby reducing the range of the frame. Miniaturize the device.

Further, in the second light-emitting device described above, the first range in which the common electrode is provided is disposed on the inner side than the second range in which the insulating layer is provided. Therefore, in the portion where the end of the insulating layer overlaps with the common electrode, the increase in the impedance value caused by the breakage or crack of the common electrode can be prevented. Therefore, unevenness in luminance of the light-emitting element can be suppressed.

In a preferred aspect of the second light-emitting device, the plurality of light-emitting elements are arranged in a matrix, and the auxiliary electrode has a gap passing through the plurality of light-emitting elements and extends from the inside to the outside of the effective range. In the direction of 1 , a plurality of individual electrodes in a stripe shape are provided. Preferably, the auxiliary electrode has a connection electrode that connects the plurality of individual electrodes to each other in the peripheral range. At this time, the end of the insulating layer in the first direction is overlapped with the connection electrode, and the connection electrode is disposed.

In a further preferred embodiment of the second light-emitting device, the plurality of light-emitting elements are arranged in a matrix, and the auxiliary electrode passes through a gap of the plurality of light-emitting elements and reaches the second range from the inside of the effective range. On the outer side, a plurality of individual electrodes in a stripe shape are provided along the first direction.

In the above-described second light-emitting device, the second electrode is a second electrode power supply line that supplies a potential, and is disposed in the peripheral range so as to intersect the first direction. The second electrode power supply line is electrically connected to the auxiliary electrode. In this case, it is preferable that the second electrode power supply line is provided on the outer side of the first range.

Furthermore, the present invention can also be used as an electronic device having the first or second light-emitting device of any of the above aspects. According to this electronic device, any of the above effects can be achieved.

Hereinafter, embodiments of the present invention will be described with reference to additional drawings. However, in the drawing, the size ratio of each part is changed as appropriate to the actual person.

<A-1: Form of the first embodiment>

Fig. 1(A) is a schematic plan view showing a part of a configuration of a light-emitting device 1 according to a first embodiment of the present invention, and Fig. 1(B) is a state in which the auxiliary electrode 150 and the pixel electrode 76 are further formed after the state of Fig. 1(A). Plan of the state. As shown in FIG. 1(A), the light-emitting device 1 is provided with a substrate 10 and is flexible. The wiring board 20 is provided. A connection terminal is formed in an end portion of the substrate 10, and a connection terminal formed between the connection terminal and the flexible wiring substrate 20 is formed by a film-like adhesion containing conductive particles called an ACF (anisotropic conductive film). The agent is fixed by pressing. Moreover, the data line drive circuit 200 is provided in the flexible wiring board 20, and various power supply voltages are supplied to the board|substrate 10 by the flexible wiring board 20.

In the substrate 10, a peripheral range B of the effective range A and the outer side (that is, between the effective range A of the outer periphery of the substrate or the substrate 10) is set. In the peripheral range B, scanning line driving circuits 100A and 100B and precharge circuit 120 are formed. The precharge circuit 120 sets the potential of the data line 112 to a specific potential circuit before the write operation. The scanning line driving circuits 100A and 100B are preamplifier circuits 120 which are peripheral circuits of the effective range A. However, the peripheral circuit may include an inspection circuit (not shown) for inspecting the unit circuit P or the wiring, and the data line driving circuit 200 may be a peripheral circuit provided in the peripheral range B.

In the effective range A, the complex scanning line 111 and the complex data line 112 are formed, and in the vicinity of each of the intersections, a complex unit circuit (pixel circuit) P is provided. The unit circuit P includes an OLED (organic light emitting diode) element, and receives power from the current supply line 113. The complex current supply line 113 is connected to the first electrode power supply line 130.

2 is a detailed circuit diagram showing a unit circuit P of the light-emitting device 1. Each unit circuit P includes an n-channel type transistor 68, a p-channel type transistor 60, a capacitor element 69, and a light-emitting element (OLED element) 70. The source electrode of the p-channel type transistor 60 is connected to the current supply line 113, and the other side The surface of the drain electrode is connected to the anode of the light-emitting element 70. Further, a capacitor element 69 is provided between the source electrode and the gate electrode of the transistor 60. The gate electrode of the n-channel transistor 68 is connected to the scan line 111, and the source electrode is connected to the data line 112, which is connected to the gate electrode of the transistor 60.

The unit circuit P is such that when the scanning line 111 corresponding to the unit circuit is selected by the scanning line driving circuits 100A and 100B, the transistor 68 turns on the capacitor element 69 which holds the data signal supplied from the data line 112. . Then, the transistor 60 is supplied to the light-emitting element 70 corresponding to the data signal level current. Thereby, the light-emitting element 70 emits light in accordance with the brightness of the data signal level.

Further, as shown in FIG. 1(A), in the outer peripheral portion side of the peripheral range B (that is, between the outer periphery of the substrate or the substrate 10 and the peripheral portion B), a U-shaped second electrode power supply line 140 is formed. The second electrode power supply line 140 is a wiring for supplying a power source voltage (in this example, Vss: ground line) to the cathode (second electrode) of the light-emitting element as will be described later. However, instead of the second electrode power supply line 140 being disposed in a U shape (that is, along the three sides of the substrate 10), the two sides facing each other along the substrate 10 may be provided. That is, in the example of the drawing, the scanning line driving circuits 100A and 100B may be disposed.

The light-emitting element 70 has an illuminating function layer (including a light-emitting layer) 74 between the pixel electrode 76 (anode) and the common electrode 72 (cathode) (see FIG. 4). The common electrode 72 is formed to span a range of the effective range A as shown in FIG. 1(B) and a part of the peripheral range B (first range). Further, the auxiliary electrode 150 connecting the common electrode 72 and the second electrode power supply line 140 is in the peripheral range B, formed by covering the peripheral circuits. The auxiliary electrode 150 includes a first portion 150a of the auxiliary electrode provided in the effective range A and a second portion 150b of the auxiliary electrode provided in the peripheral range B. In the effective range A, the first portion 150a of the auxiliary electrode 150 and the pixel electrode 76 are not in contact with each other, and the first portion 150a of the auxiliary electrode 150 is formed in a lattice shape. That is, the first portion 150a of the auxiliary electrode 150 is disposed in the gap of the light-emitting element 70. In the present specification, the auxiliary electrode is a conductor that is electrically connected to the common electrode 72 and is connected to the common electrode 72 to lower the resistance of the common electrode 72. To be more specific, Figure 3 shows an enlargement of a portion of Figure 1 (B).

The light-emitting device 1 of this embodiment is configured to emit in the form of a top emission, and the light from the light-emitting function layer 74 is emitted through the common electrode 72. The common electrode 72 is formed of a transparent material. For this reason, the peripheral range B cannot be shielded from light by the common electrode 72. On the other hand, in the auxiliary electrode 150, since the conductive and light-shielding metal is used, the auxiliary electrode 150 can be shielded from light. Thereby, light is incident on the peripheral circuit, and the occurrence of photocurrent can be suppressed. Further, the auxiliary electrode 150 can be obtained by forming the pixel electrode 76 of the effective range A in the same manner. Therefore, in the peripheral range B, it is not necessary to add special light shielding properties, and special engineering is added.

4 is a partial cross-sectional view showing the light-emitting device 1. In the same figure, in the effective range A, the light-emitting element 70 is formed, and on the other hand, in the peripheral range B, the scanning line drive circuit 100A of the peripheral circuit is formed. In the same figure, the upper surface of the light-emitting device 1 serves as an emitting surface for emitting light. As shown in the figure, on the substrate 10, a substrate protective layer 31 is formed on which transistors 40, 50 and 60 are formed. The transistor 40 is an n-channel type, transistor 50 and 60 series p channel type. The transistor 40, 50 is part of the scanning line driving circuit 100A, and the transistor 60 and the light emitting element 70 are part of the unit circuit P.

The transistors 40, 50, and 60 are provided on the substrate protective layer 31 mainly composed of ruthenium oxide formed on the surface of the substrate 10. In the upper layer of the substrate protective layer 31, germanium layers 401, 501, and 601 are formed. The gate insulating layer 32 is provided on the upper layer of the substrate protective layer 31 in the cap layer 401, 501, and 601. The gate insulating layer 32 is made of, for example, hafnium oxide. In the upper surface of the gate insulating layer 32, gate electrodes 42, 52, and 62 are provided opposite to the germanium layers 401, 501, and 601. In the transistor 40, the gate electrode 401 is doped with a group V element by the gate electrode 401 to form a drain region 40c and a source region 40a. Here, the undoped group V element range becomes the channel range 40b.

In the transistors 50 and 60, the gate electrodes 52 and 62 are doped with the group III elements by the gate electrodes 52 and 62 to form the drain regions 50a and 60a, and the source. Ranges 50c and 60c. Here, the range of the undoped group III element becomes the channel range 50b and 60b. However, while the gate electrodes 42, 52, and 62 of the transistors 40, 50, and 60 are formed, the scanning line 111 is formed.

The first interlayer insulating layer 33 is formed on the upper layer of the gate insulating layer 32 by covering the gate electrodes 42, 52 and 62. As the material of the first interlayer insulating layer 33, ruthenium oxide or the like is used. Furthermore, the source electrodes 41, 51 and 63, the drain electrode, the source electrode 43, and the drain electrode 61 are in the gate insulating layer 32 and the first interlayer insulating layer 33, and the opening layer is connected to the germanium layer. 401, 501 and 601 are connected. In addition, the same project as these electrodes forms the second The electrode power supply line 140, the data line 112, and the current supply line 113. These electrodes and the second electrode power supply line 140 and the like are formed of a material having conductive aluminum or the like.

The circuit protection film 34 is covered with the source electrodes 41, 51, and 63, and the drain electrode, the source electrode 43, the drain electrode 61, and the second electrode power supply line 140 are provided on the upper layer of the first interlayer insulating layer 33. The circuit protection film 34 is formed of, for example, a material having a low gas permeability such as tantalum nitride or ruthenium oxide. Further, such tantalum nitride or lanthanum oxynitride may be an amorphous material and may contain hydrogen. The detachment of hydrogen of the transistors 40, 50, 60, and the like can be prevented via the circuit protection film 34. However, it is also possible to form the circuit protection film 34 under the source electrode or the drain electrode.

The second interlayer insulating film 35 is provided on the upper layer of the circuit protective film 34. Here, the second interlayer insulating film is provided on the source electrodes 41, 51, and 63, the drain electrode, the source electrode 43, the drain electrode 61, and the second electrode power supply line 140, and the pixel electrode 76 and the support described later. Between the electrode 150 or the common electrode 72, these achieve an insulating effect. At this time, the film thickness is set without delaying the signal supplied to the scanning line or the signal line. However, the second interlayer insulating film 35 is more uneven than the lower surface of the counter circuit protective film 34, and it is preferable that the unevenness on the surface opposite to the circuit protective film 34 is small. That is, the second interlayer insulating film 35 is used to flatten the crystals 40, 50, 60, the scanning line 111, the data line 112, the current supply line 113, and the like. The second interlayer insulating film 35 is formed so as to overlap the first range (the range in which the common electrode 72 is formed) in the effective range A as a whole, and is provided in the second range which overflows in the first direction in the peripheral range B from the first range. More specifically, in this embodiment, At least three sides of the left and right sides and the upper side of the second electrode power supply line 140 among the four sides of the substrate 10 are disposed, and the second range is smaller than the first range, and protrudes in the in-plane direction of the substrate 10.

Among the materials of the second interlayer insulating layer 35, for example, an acrylic or polyimine-based organic polymer material is used. At this time, the photosensitive material mixed with the organic resin as a pattern is exposed and patterned in the same manner as the photoresist film. Alternatively, the second interlayer insulating film 35 may be formed by an inorganic material such as cerium oxide or cerium oxynitride via chemical vapor deposition (CVD), and the upper surface may be planarized by an etching method or the like. When the inorganic material is formed into a film by a chemical vapor phase growth method, the film thickness is 1 μm or less, and nearly the same, the organic resin is formed by coating, and the film is formed by coating. The thickness can be more than about 2 to 3 μm, and the upper surface is hardly affected by the unevenness of the lower layer, and is suitable as the material of the second interlayer insulating film 35. In particular, when a certain degree of unevenness is allowed, an inorganic material such as cerium oxide or cerium oxynitride can be applied to the second interlayer insulating film 35. As described above, the second interlayer insulating film is required to have a specific film thickness, and a step is generated in the peripheral range.

On the second interlayer insulating film 35, the pixel electrode 76 (first electrode) and the first portion 150a of the auxiliary electrode are formed in the effective range A, and the second portion 150b of the auxiliary electrode is formed in the peripheral region B. That is, the pixel electrode 76 and the auxiliary electrode 150 are formed in the same layer and formed using the same material. The pixel electrode 76 of this embodiment is an anode of the light-emitting element 70, and is formed separately from each other by the light-emitting element 70, and penetrates the connection hole of the second interlayer insulating film 35 and the circuit protection film 34, and the drain of the transistor 60. The electrodes 61 are connected. Further, as the material of the anode pixel electrode 76, a material having a large work function is desired, and for example, nickel, gold, platinum, or the like is suitable. These materials are reflective, and the light emitted by the luminescent function layer 74 is reflected toward the common electrode 72. At this time, the auxiliary electrode 150 is also formed of such a material.

Further, the pixel electrode 76 includes a first layer having a light transmittance and conductivity of an oxidized conductive material such as ITO (indium tin oxide), IZO (indium zinc oxide), or ZnO _{2 having a} high work function, and The reflective metal may include, for example, a second layer made of an aluminum film and a first layer provided on the side of the light-emitting function layer. At this time, the auxiliary electrode 150 may have both the first layer and the second layer, and may have any of these layers.

The auxiliary electrode 150 is formed in a lattice shape (first portion 150a) by a gap of the plurality of light-emitting elements 70, and forms a second range of the second interlayer insulating film 35 in the peripheral region in the effective range A. The first range overflow side of the electrode 72 (in the present embodiment, the left and right sides and the upper side of the substrate 10) pass through the inner side of the first range and the outer side of the first range and the inner range of the second range, and reach the second range. Formed on the outside (second part 150b). The auxiliary electrode 150 is connected to the second electrode power supply line 140 by forming a connection hole of the circuit protection film 34 in the peripheral range B. As shown in the figure, the second interlayer insulating film 35 is not formed on the second electrode power supply line 140, and only the connection hole is formed in the circuit protection film 34, and the second portion 150b of the auxiliary electrode 150 can be directly in contact with the second electrode. Use power cord 140.

Next, the partition wall 37 is formed. The partition wall 37 is a layer of each pixel electrode 76 The outer edge of the outer shape is covered by the partition wall 37 and has an opening 37a. Therefore, each of the openings 37a is superposed on the pixel electrode 76, and the pixel electrode 76 is exposed through the opening 37a in the previous stage of forming the luminescent function layer 74. The partition wall 37 is between the insulating pixel electrode 76 and the common electrode 72 (second electrode) formed later, or between the insulating pixel electrodes 76. By providing the partition walls 37, the respective pixel electrodes 76 can be independently controlled, and a plurality of light-emitting elements can be illuminated with respective specific brightnesses. That is, the partition wall 37 divides a plurality of light-emitting elements. For example, acrylic acid or polyimine or the like is an insulating material of the partition wall 37. At this time, the photosensitive material to be patterned is mixed and patterned by exposure as in the case of the photoresist film. A connection hole CH is simultaneously formed in the partition wall 37. In the effective range A, the first portion 150a of the auxiliary electrode 150 and the common electrode 72 to be described later are connected by the connection hole CH. Moreover, the same layer as the partition wall 37 is not provided in the second portion 150b of the auxiliary electrode 150 in the peripheral range B.

Next, at least the luminescent function layer 74 including the luminescent layer is formed on the pixel electrode 76. An organic EL substance is used in the light-emitting layer. The organic EL material may be a low molecular material or a high molecular material. The other layer constituting the luminescence functional layer 74 may include a part or all of the positive hole implantation layer, the positive hole transport layer, the electron transport layer, the electron implantation layer, the positive hole barrier layer, and the electron blocking layer.

Next, the auxiliary electrode 150 and the light-emitting function layer 74 are covered in the effective range A and the peripheral range B to form the common electrode 72 (second electrode). The common electrode 72 is translucent, and the light from the light-emitting element 70 is transmitted through the common electrode 72 and is emitted in the upper direction in the drawing. In order to share this embodiment The through electrode 72 operates as a cathode of all of the light-emitting elements 70, and the common electrode 72 is easily injected into the electrons and formed by a material having a low work function. For example, aluminum, calcium, magnesium, or lithium metal or such metal compounds. Also, this alloy is expected to use a material having a low work function and a material that stabilizes the material. For example, magnesium and silver alloys are suitable. When these metals or alloys are used for the common electrode 72, in order to obtain light transmittance, the thickness may be reduced.

Further, the common electrode 72 (second electrode) includes a material having a low work function, a material having a low work function, and a first layer which is stabilized by the material, and such as ITO (indium tin oxide) or IZO (indium zinc oxide). Or a second layer which is light-transmitting and conductive by the oxidized conductive material of ZnO ₂ and a first layer provided on the side of the light-emitting function layer. An oxidized conductive material such as ITO, IZO, or ZnO _{2 is} a close material and has a low gas permeability. When the common electrode 72 is formed in such a material, the common electrode 72 is formed in the effective range A and the peripheral range B, so that the peripheral circuits of the unit circuit P and the peripheral range B of the effective range A can be protected by the outside air. This deterioration is suppressed. When the common electrode 72 (second electrode) is configured to include the second layer, the light transmittance and conductivity are superior to those of the first layer material, and the power supply impedance of the common electrode 72 can be greatly reduced. At the same time, the light extraction efficiency by the illuminating function layer can be improved. Further, the common electrode 72 (second electrode) is formed by including a material having a low work function and a first layer formed by stabilizing the material, and a second layer formed of the oxidized conductive material, so that the first layer and the second layer are formed. The layer reaction prevents deterioration of electron implantation efficiency.

Further, before the formation of the common electrode 72, the connection hole CH is formed in the partition wall 37. By connecting the hole CH, in the effective range A, connecting the auxiliary power The first portion 150a of the pole and the common electrode 72. In the effective range A, the first portion 150a (see FIG. 1(B)) in which the auxiliary electrode is formed in a lattice shape can greatly reduce the power supply impedance of the common electrode 72 by connecting the common electrode 72. In addition, the second portion 150b of the auxiliary electrode is in the peripheral range B and is not covered by the partition wall 37, so that the common electrode 72 is in contact with the wide-area surface, so that the connection resistance can be reduced. Therefore, the power supply impedance can be greatly reduced.

Next, the common electrode 72 and the auxiliary electrode 150 are covered to form a sealing film 80. In the sealing film 80, for example, an inorganic material having a low gas permeability such as yttrium oxynitride or cerium oxide having high transparency and good moisture resistance is used. The sealing film 80 covers the entire range of the peripheral circuits (the scanning line driving circuits 100A and 100B having the transistors 40 and 50 and the precharge circuit 120). However, in the outer end edge of the substrate 10, the sealing film 80 is not formed, and in the other end edge, the sealing material 90 is bonded to the circuit protection film 34, and the transparent sealing substrate (opposing substrate) 110 is bonded to the upper portion. The sealing material 90 may be, for example, an adhesive, or may be adhered by an adhesive to maintain the spacer of the opposite substrate 110.

Figure 5 is a schematic cross-sectional view of the range C of Figure 4. That is, in the peripheral range B, the transistor 40, 50 which is a part of the scanning line driving circuit 100 is a cross-sectional view of the outer end portion. For convenience of explanation, the substrate protective layer 31, the gate insulating layer 32, the first interlayer insulating layer 33, the circuit protective film 34, and the transistors 40, 50, and 60 each of which is shown in FIG. The electrode is shown as an element layer 30 in Fig. 5 as a whole. The second electrode power supply line 140 is formed in the upper layer portion of the element layer 30. As described above, the upper surface of the second electrode power supply line 140 is used as the upper electrode and the contact. The scope works. In FIG. 4, in addition to the element layer 30 and the second electrode power supply line 140, the second interlayer insulating film 35, the auxiliary electrode 150, the common electrode 72, the sealing film 80, the sealing material 90, and the counter substrate 110 are displayed. Hereinafter, the relative positional relationship of each layer will be described in detail with reference to this drawing.

However, as described above, the second interlayer insulating film 35 is used for flattening through irregularities generated by a transistor or wiring disposed in the lower layer. In addition, the second interlayer insulating film 35 is formed of an acrylic or polyimide-based insulating organic polymer material, and has circuit elements such as transistors 40, 50, and 60 disposed in the element layer 30. The functions of the electrodes such as the insulating anode 76, the common electrode 72, and the auxiliary electrode 150. That is, it functions as an insulating layer for insulating the respective electrodes from the circuit element for controlling the light emission of the light-emitting element.

As shown in FIG. 5, in the upper layer of the element layer 30 including the second electrode power supply line 140, the second interlayer insulating film 35 is formed, and the end E2 of the second interlayer insulating film 35 is connected to the second electrode power supply line 140. The inner end E3 of the dot range is further inside. The second portion 150b of the auxiliary electrode 150 is formed on the upper surface of the second interlayer insulating film 35 and the end portion E2 and the end E3 of the second interlayer insulating film 35 on the upper surface of the element layer 30 (hereinafter, Simply referred to as "subsidy electrode 150"). Thereby, the auxiliary electrode 150 is connected to the second electrode power supply line 140 and electrically connected to the second electrode power supply line 140. In the illustrated example, the end E4 of the auxiliary electrode 150 coincides with the end of the outer side of the contact range, but it is not necessary to be uniform, and the auxiliary electrode 150 may be formed by covering the contact range. That is, the auxiliary electrode The end E4 may be formed on the outer side of the outer side of the contact range.

However, in the present specification, "inside" and "outer side" indicate the relative positions in the substrate surface when the end E5 of the substrate 10 is used as a reference. Therefore, for example, "the distance between the end E1 is the inner side" and the end E1 of the substrate E1 is the distance between the end E1 and the end E5 of the substrate 10, and the distance between the end E2 and the end E5 is long.

A common electrode 72 is formed on the auxiliary electrode 150. The end E2 of the common electrode 72 is outside the end El of the first interlayer insulating film 35. Further, the end E4 of the auxiliary electrode 150 is formed outside the end E1 of the common electrode 72. However, as described above, the auxiliary electrode 150 is formed simultaneously with the pixel electrode 76, and secondly, the partition wall 37 and the light-emitting function layer 74 are sequentially formed, and then the partition wall 37 and the light-emitting function layer 74 are covered to form the common electrode 72.

As described above, a metal having conductivity and light blocking properties is used for the auxiliary electrode 150. Therefore, in the effective range A, the auxiliary electrode 150 and the pixel electrode 76 are not overlapped, and the first portion 150a of the auxiliary electrode 150 is formed in a lattice shape. In other words, in the effective range A, the light emitted from the light-emitting element 70 is not blocked, and the first portion 150a of the auxiliary electrode 150 is disposed only in the gap of the light-emitting element 70. Since the light-emitting elements 70 are arranged at a slight interval from each other, it is preferable that the auxiliary electrode 150 is formed using a high-precision alignment mechanism. On the other hand, since the common electrode 72 is formed of a transparent material, the light-emitting element 70 is covered in the effective range A, and is formed in the effective range A in the same manner. For this reason, the common electrode 72 may be formed using a lower alignment precision than that of the auxiliary electrode 150. However, when the common electrode 72 is formed using the low-precision alignment mechanism, the position of the end E1 of the common electrode 72 may fluctuate.

Here, the position error of the end E1 of the common electrode 72 is set to t1, and the position error of the end E4 of the auxiliary electrode 150 is t2. When the auxiliary electrode 150 is used with a higher precision alignment mechanism, it is t1>t2. Further, the single alignment mechanism having the auxiliary electrode 150 to a desired degree of precision is approximately t1=t2 when used for both the auxiliary electrode and the common electrode 72. Therefore, the error t2 of the auxiliary electrode 150 is lower than the error of the common electrode 72. Conversely, in the latter case, even if t1 < t2, a high-precision alignment mechanism is used, and the error of t1 does not occur. Become a big problem. Here, in the present embodiment, the end E4 of the auxiliary electrode 150 is configured to be located outside the end E1 of the common electrode 72. According to this configuration, the error of the auxiliary electrode 150 is determined by the distance from the maximum position E4max (the position at which the end E4 is close to the end E5 side of the substrate 10) to the end E5 on the side E5 of the substrate 10, and the width of the peripheral range B is determined. (ie, you can determine the "border range"). Therefore, it is possible to reduce the frame range as compared with the case where the end E1 of the common electrode 72 which allows a larger error is disposed on the outer side than the end E4 of the auxiliary electrode 150. That is, the accuracy of forming the alignment mechanism by the common electrode 72 can reduce the influence of the width of the frame. However, the error E1max at which the error of the common electrode 72 is maximized on the end E5 side of the substrate 10 is the inner side of the maximum position E4max on the side of the substrate 10 end E5 from the error of the auxiliary electrode 150, and the end E2 and the end E4 are set. The reference position (position at the time of no error) is preferred.

FIG. 6 shows a case where the common electrode 72 is formed by being superposed on the end E2 of the second interlayer insulating film 35 as a comparative example. As shown in FIG. 6, in this comparative example, the end E1 of the common electrode 72 is lower than that of the second interlayer insulating film 35. End E2 is arranged on the outside. As described above, the second interlayer insulating film 35 is formed by flattening the lower layer convex and concave and thickening. Therefore, the end E2 of the second interlayer insulating film 35 has a large step. On the other hand, the common electrode 72 is formed of, for example, a thin film material such as ITO. For this reason, in the configuration of the comparative example, the crack I shown in FIG. 6 is generated in the common electrode 72 due to the step difference of the end E2 of the second interlayer insulating film 35. When crack I is generated, the resistance value of the crack portion increases, and the crack I portion and the crack portion I are not generated, and the inflow current value is different, and the voltage drop amount is different. However, in the present embodiment, the end E1 of the common electrode 72 is disposed inside the end E2 of the second interlayer insulating film 35, and the common electrode 72 can be prevented from being broken or cracked. Therefore, it is possible to prevent an increase in the impedance value caused by the disconnection or cracking. Therefore, unevenness in luminance of the light-emitting element 70 can be suppressed.

<A-2: Modification of the first embodiment>

In the above-described embodiment, the configuration in which the auxiliary electrode 150 and the pixel electrode 76 are simultaneously formed will be described, and the pixel electrode 76 may not be formed at the same time. The auxiliary electrode 150 may be formed in the process after the partition wall 37.

Fig. 7 is a partial cross-sectional view showing a light-emitting device 1A of the present modification. As shown in FIG. 7, in the light-emitting device 1A, the second interlayer insulating film 35 and the partition walls 37 are covered to form the auxiliary electrodes 150 (150a, 150b). In the above embodiment, as shown in FIG. 4, the auxiliary electrode 150 has a portion on which the second interlayer insulating film 35 and the partition wall 37 are formed. On the other hand, in this modification, in the portion of the partition wall 37, the auxiliary electrode 150 is formed on the partition wall 37. Here, the partition wall 37 is the same as the second interlayer insulating film 35, and the common electrode 72 or the auxiliary electrode 150 is insulated as the separation of the transistors 40, 50, and 60. The layer works. Further, similarly to the first embodiment, the end E4 of the auxiliary electrode 150 is overlapped with the second electrode power supply line 140, and the end E1 of the common electrode 72 is inside the end E4 of the auxiliary electrode 150, and is formed between the second layers. The inner side of the end E2 of the insulating film 35.

The outline of the manufacturing process of the light-emitting device 1A is as follows. After the second interlayer insulating film 35 is formed, the pixel electrode 76 is formed on the upper layer of the second interlayer insulating film 35. Thereafter, a partition wall 37 is formed on the upper layer of the pixel electrode 76, and the surface of the opening portion 37a of the second interlayer insulating film 35 and the partition wall 37 is removed to form the auxiliary electrode 150. Next, the light-emitting function layer 74 is formed in the space on the pixel electrode 76 partitioned by the partition wall 37 (that is, the opening portion 37a). However, conversely, after the light-emitting function layer 74 is formed, the auxiliary electrode 150 may be formed. Further, the common electrode 72 having transparency is formed in the effective range A and the peripheral range B. Thereafter, a sealing film 80 is formed on the common electrode 72. However, on the outer edge of the substrate 10, the sealing film 80 is not formed, and in the other end, the sealing material 90 is bonded to the circuit protection film 34, and the transparent sealing substrate 110 is bonded to the upper portion.

When the auxiliary electrode 150 is formed, if the luminescent function layer 74 is formed, the luminescent function layer 74 is not formed at the time of forming the auxiliary electrode 150, and the micron technique is used for the formation of the auxiliary electrode 150, and the luminescent function layer is not deteriorated. After 74. Therefore, the pattern of the auxiliary electrode 150 can be formed by the micron reduction, and the auxiliary electrode 150 can be formed with the same precision as the wiring of the transistor 40, 50, 60 or the scanning line 111. On the other hand, when the auxiliary electrode 150 is formed after the light-emitting function layer 74 is formed, the auxiliary electrode 150 does not contaminate the luminescent material, and the auxiliary electrode 150 and the common electrode can be connected. 72 advantages.

Further, in the present modification, the common electrode 72 is formed on the upper layer of the auxiliary electrode 150, and the auxiliary electrode 150 having a thicker common electrode 72 is formed, and stress is not applied to the common electrode 72. Therefore, deformation of the common electrode 72 caused by the upper layer stress can be suppressed.

<B: Form of the second embodiment>

Next, a light-emitting device according to a second embodiment of the present invention will be described. Fig. 8 is a partial cross-sectional view showing a light-emitting device 2A of the present embodiment. As shown in FIG. 8, the auxiliary electrode 150 is formed on the common electrode 72 and is formed in surface contact, and covers the auxiliary electrode 150 and the common electrode 72 to form a sealing film 80. The light-emitting device 2A is the same as the light-emitting device 1A (FIG. 7) of the first embodiment except that the common electrode 72 is formed in the lower portion of the auxiliary electrode 150. Therefore, the description is suitably omitted.

Similarly to the above-described light-emitting device 1A, in the present embodiment, the auxiliary electrode 150 is formed on the upper portion of the partition wall 37 in the portion of the partition wall 37. Therefore, the partition wall 37 is the same as the second interlayer insulating film 35, and the common electrode 72 or the auxiliary electrode 150 is operated as an insulating layer separated by the transistors 40, 50, and 60.

The outline of the manufacturing process of the light-emitting device 2A is as follows. After the second interlayer insulating film 35 is formed, the pixel electrode 76 is formed on the upper layer of the second interlayer insulating film 35. Thereafter, a partition wall 37 is formed on the upper layer of the pixel electrode 76, and a light-emitting function layer 74 is formed in a space (i.e., the opening portion 37a) of the pixel electrode 76 partitioned by the partition wall 37. Further, the transparent common electrode 72 is formed in the effective range A and the peripheral range B. After that, The range of the upper layer of the opening portion 37a on the common electrode 72 is excluded, and the auxiliary electrode 150 is formed to form the sealing film 80. However, on the outer edge of the substrate 10, the sealing film 80 is not formed, and in the other end, the sealing material 90 is bonded to the circuit protection film 34, and the transparent sealing substrate 110 is bonded to the upper portion.

Figure 9 is a partial cross-sectional view showing a range F of Figure 8. As shown in FIG. 8 and FIG. 9, in the light-emitting device 2A, a portion of the transistor 40, 50 of the scanning line driving circuit 100 is disposed on the inner side of the substrate 10, and the end E1 of the common electrode 72 is compared. The end E2 of the second interlayer insulating film 35 is formed on the inner side, and is formed on the inner side from the end E4 of the auxiliary electrode 150. Therefore, the same effects as those of the first embodiment described above can be obtained.

<C: Modification>

(1) In the first and second embodiments, the upper layer of the common electrode 72 or the auxiliary electrode 150 is covered with the sealing film 80, and the element layer 30, the second electrode power supply line 140, and the second interlayer are insulated. The layer structure of the film 35, the common electrode 72, and the auxiliary electrode 150 is configured to be protected by the outside air, but the configuration of the sealing film 80 may be omitted.

Fig. 10 is a schematic cross-sectional view showing a light-emitting device 1C according to the present modification. As shown in FIG. 10, in the light-emitting device 1C, the sealing film 80 is not provided, and the layer structure formed on the substrate 10 is protected via the sealing material 90 and the opposite substrate 110. However, a desiccant (not shown) that absorbs moisture may be disposed on the inner side of the counter substrate 110, or a configuration in which the desiccant is embedded may be used in the counter substrate 110 itself. Further, in the replacement of the opposite substrate 110 and the sealing material 90, a closed can is used.

Figure 11 is a view showing another light-emitting device 1D according to the present modification. A brief cross-section. As shown in FIG. 11, in the light-emitting device 1D, the layer structure can be protected by the outside air by filling the moisture-proof filler 65 between the layer structures formed on the opposite substrate 110 and the substrate 10. As the moisture-proof filler 65, it is preferable that the light-transmitting property is low in moisture absorption, and an epoxy-based or urethane-based pressure-sensitive adhesive or the like can be used.

(2) In the above-described first to fourth embodiments, the second electrode power supply line 140 is formed in a U shape in the peripheral range B. However, the present invention is not limited thereto, and may be appropriately modified.

12 and 13 are schematic explanatory views for explaining the layout of each of the light-emitting devices of the present modification. In the drawings, the same reference numerals are given to the same portions as those of the above-described embodiments, and the description is omitted as appropriate.

As shown in FIG. 12(A), in the light-emitting device 3A, the second electrode power supply line 140 is disposed along each of the two edge portions of the substrate 10 facing the two sides. Further, the signal input terminal G is disposed along the side of the remaining two sides, and the first electrode power supply line 130 is disposed inside the surface of the substrate 10 of the signal input terminal G. In the inner side of the second electrode power supply line 140, along the effective range A, the scanning line driving circuits 100A and 100B are arranged along the respective effective ranges A, and are supplied by the second electrode power supply line 140 while being input by the signal. Terminal G, for external control signals. Further, in the inner side of the first electrode power supply line 130, the data line drive circuit 200 is disposed along the effective range A. The data line driving circuit 200 is powered by the first electrode power supply line 130 one by one, and receives an external control signal from the signal input terminal G, and supplies it to each data line.

In this example, the second interlayer insulating film 35 is covered with the effective range A, All of the scanning line driving circuits 100A and 100B and the data line driving circuit 200 and a part of the first electrode power supply line 130 (in the example, when the side of the signal input terminal G is disposed as the longitudinal direction) All of the portions extending in the longitudinal direction are formed in a direction orthogonal to the longitudinal direction, and are formed toward a lower portion of the substrate 10 to extend a part thereof. Further, the common electrode 72 covers the effective range A and all of the scanning line driving circuits 100A and 100B, and the left and right ends on the side of the second electrode power supply line 140 are disposed on the inner side of the second layer insulating film 35. form. Further, the middle end and the lower side (signal input terminal G side) end of the common electrode 72 are located outside the effective range A and are located inside the data line driving circuit 200, and the upper side is closer to the second interlayer insulating film 35. The end is on the inside. That is, the respective ends of the four sides of the common electrode 72 are located on the inner side than the ends of the corresponding sides of the second interlayer insulating film 35. In other words, the end of the second interlayer insulating film 35 is under all sides, and the end of the common electrode 72 protrudes outside. In other words, the second range covers the entire first range, and protrudes outward from the first range on all sides.

The auxiliary electrode is formed in the same direction as the side on which the signal input terminal G is disposed, and is formed as a stripe-shaped individual electrode 150c having a length. Specifically, the individual electrode 150c is in the effective range A, and passes through the gap of the light-emitting element 70 in the peripheral range B, the inside of the first range and the outside of the first range, and reaches the second range through the inner range of the second range. The outer side of the range extends to a range overlapping the second electrode power supply line 140, and is electrically connected to the second electrode power supply line 140. That is, the end is located outside the end of the second interlayer insulating film 35 and is located outside the end of the common electrode 72. via According to this modification, the same effects as those of the above embodiments can be obtained.

Next, as shown in FIG. 12(B), the light-emitting device 3B has the same configuration as that of the light-emitting device 3A except that the scanning line driving circuit and the data line driving circuit are opposite in position. In other words, in the light-emitting device 3B, the scanning line driving circuit 100 is disposed along the effective range A in the peripheral range B on the lower side of the substrate 10, and the data line driving circuits 200A and 200B are disposed on the left and right sides of the substrate 10. Range B. The second electrode power supply line 140 is disposed outside the data line drive circuits 200A and 200B, and is disposed on the two sides (left and right sides) along the substrate 10, and the auxiliary electrode 150 is formed to be the second electrode power supply line 140. The orthogonal direction (that is, the same direction as the arrangement of the signal input terminal G) is a stripe shape of length. Similarly to the light-emitting device 3A, the left and right ends of the auxiliary electrode 150c are located outside the end of the common electrode 72, and are located outside the end of the second interlayer insulating film 35, and are overlapped with the second electrode power supply line 140. Formed. Therefore, the same effects as those of the above-described embodiment can be obtained via the light-emitting device 3B.

However, in either case of the light-emitting devices 3A and 3B, as shown on the right side of FIG. 12(A), the auxiliary electrode 150 is formed in a stripe-shaped plurality of individual electrodes 150c and a peripheral range B, and has a connection electrode 150d that connects the plurality of individual electrodes 150c. Also. At this time, the connection electrode 150d has an inner portion that overlaps the first range, and an outer portion that passes through the outer side of the first range and that is inside the second range, and reaches the outer portion of the second range, and further, the power supply line for the second electrode 140 is formed by overlapping. In other words, the connection electrode 150d is not only overlapped with the second electrode power supply line 140, but also the end of the second interlayer insulating film 35 and the end of the common electrode 72 are overlapped with the connection electrode 150d.

13(A) and (B) show other layout examples of the light-emitting device. As shown in FIG. 13(A), in the light-emitting device 4A, a signal input terminal G is disposed along the lower edge of the substrate 10, and the second electrode power supply line 140 is disposed in a U-shape on the inner side. Further, in the inner side of the second electrode power supply line 140, the first electrode power supply line 130 is disposed in a U shape, and the data line driving circuit 200 is disposed between the first electrode power supply line 130 and the effective range A. . The scanning line driving circuits 100A and 100B are disposed along the respective ranges of the left and right sides of the effective range A.

As shown in the figure, the second interlayer insulating film 35 covers the entire effective range A, all of the scanning line driving circuits 100A and 100B, and the data line driving circuit 200, and a part of the first electrode power supply line 130 (example example) In the case where the side where the signal input terminal G is disposed is formed in the longitudinal direction, the portion extending in the longitudinal direction is formed. The common electrode 72 is formed in almost the same portion as the second interlayer insulating film 35, and is formed on the inner side of the four sides of the common electrode 72 so as to be located inside the end corresponding to the second interlayer insulating film 35. Therefore, in the present modification, the second range of the second interlayer insulating film 35 is formed on all sides of the substrate 10, and is in the in-plane outer direction of the substrate 10, which is more serious than the first range in which the common electrode 72 is formed. Out.

As shown in the figure, the auxiliary electrode is formed as a stripe-shaped individual electrode 150e having a length extending in a direction parallel to the scanning line driving circuits 100A and 100B. The end of the individual electrode 150e on the lower end side of the substrate 10 is formed by overlapping and connecting the second electrode power supply line 140. However, in this example, the individual electrode 150e intersects with the first electrode power supply line 130, The first electrode power supply line 130 and the second electrode power supply line 140 are formed in separate layers, and the individual electrode 150e is not connected to the first electrode power supply line 130, and is formed only by being connected to the second electrode power supply line 140. Similarly, the common electrode 72 and the first electrode power supply line 130 are overlapped, and the first electrode power supply line 130 and the second electrode power supply line 140 are formed in individual layers, and the common electrode 72 and the first electrode power supply line are formed. 130 becomes a component of non-electrical contact. On the other hand, the end of the individual electrode 150e on the upper end side of the substrate 10 is located outside the individual electrode 150e at the end of the common electrode 72, and is located outside the end (second range) of the second interlayer insulating film 35. form. Therefore, the same effects as those of the above embodiments can be obtained via the light-emitting device 4A.

Next, as shown in FIG. 13(B), the light-emitting device 4B has the same configuration as that of the light-emitting device 4A except for the portion where the scanning line driving circuit and the data line driving circuit are opposite to each other. In other words, in the light-emitting device 4B, the scanning line driving circuit 100 is disposed along the effective range A in the peripheral range B on the lower side of the substrate 10, and the data line driving circuits 200A and 200B are disposed on the left and right sides of the substrate 10. Peripheral range B. The second electrode power supply line 140 is disposed on the lower end side of the substrate 10, and is disposed in a U shape on the inner side of the signal input terminal G. The auxiliary electrode 150 is formed as a stripe of a length parallel to the data line driving circuits 200A and 200B. shape. Similarly to the light-emitting device 4A, the upper and lower ends of the auxiliary electrode 150 are located outside the end of the common electrode 72, and are overlapped with the second electrode power supply line 140 while being located outside the end of the second interlayer insulating film 35. The ground is formed. Therefore, the same effect as the above embodiment can be obtained via the light-emitting device 4B. fruit.

As shown in FIGS. 12(A), 12(B), 13(A), and 13(B), in the peripheral range B, the auxiliary wiring 150 is in the direction in which the second electrode power supply line 140 extends in the direction in which it extends. The extension exists in a stripe shape. In other words, in FIG. 1 to FIG. 3, the auxiliary wiring 150b also extends in the extending direction of the second electrode power supply line 140, and extends only in the direction in which the extending direction of the second electrode power supply line 140 intersects. In other words, the auxiliary wiring 150 is not necessarily formed in parallel with the extending direction of the second electrode power supply line 140, and may be formed to cross the second electrode power supply line 140.

<D: Electronic Machine>

Next, an electronic device using the light-emitting device of the present invention will be described. In FIGS. 14 to 16, an embodiment of an electronic device to which the light-emitting device of any of the above aspects is used as a display device is illustrated.

Fig. 14 is a perspective view showing the configuration of a portable personal computer using a light-emitting device. The personal computer 2000 is provided with light-emitting devices 1, 1A, 1C, 1D, 2A, 3A, 3B, 4A, 4B for displaying various portraits, and a main body portion 2010 in which a power switch 2001 or a keyboard 2002 is provided. The light-emitting devices 1, 1A, 1C, 1D, 2A, 3A, 3B, 4A, and 4B use an organic light-emitting diode element as the light-emitting element 70, and can display a wide-view and easy-to-see picture.

Figure 15 is a perspective view showing the configuration of a portable telephone to which a light-emitting device is applied. The portable telephone 3000 is provided with a plurality of operation buttons 3001 and a reel button 3002, and light-emitting devices 1, 1A, 1C, 1D, 2A, 3A, 3B, 4A, 4B for displaying various portraits. Display light by operating the scroll button 3000 Screens of devices 1, 1A, 1C, 1D, 2A, 3A, 3B, 4A, 4B.

Fig. 16 is a perspective view showing the configuration of a portable information terminal (PDA: Personal Digital Assistants) to which a light-emitting device is applied. The information carrying terminal 4000 includes a plurality of operation buttons 4001 and a power switch 4002, and light-emitting devices 1, 1A, 1C, 1D, 2A, 3A, 3B, 4A, and 4B for displaying various images. When the power switch 4002 is operated, the address or the trip information and the like are displayed on the light-emitting devices 1, 1A, 1C, 1D, 2A, 3A, 4A, 4B.

However, as an electronic apparatus to which the light-emitting device of the present invention is applied, in addition to those shown in FIGS. 14 to 16, a digital camera, a television, a video recorder, a car navigation device, a pager, an electronic notebook, Electronic paper, computer, word processor, workstation, videophone, POS terminal, printer, scanner, photocopying machine, video recorder, machine with touch panel, etc. Further, the use of the light-emitting device of the present invention is not limited to the display of an image. For example, in an image forming apparatus of an optical writing type printer or an electronic photocopier, an optical head that is exposed to a photoreceptor that is to be formed in an image such as paper is used, and the optical head can be used as such. The illuminating device of the invention.

1,1A,1C,1D,2A,3A,3B,4A,4B‧‧‧Lighting device

10‧‧‧Substrate

70‧‧‧Lighting elements

34‧‧‧ circuit protection film

35‧‧‧Second interlayer insulating film (insulation layer)

37‧‧‧ partition wall

37a‧‧‧ Opening

65‧‧‧Moisture-proof filler

72‧‧‧Common electrode (2nd electrode)

74‧‧‧Lighting function layer

76‧‧‧ pixel electrode (first electrode)

80 ‧ ‧ closed film

90‧‧‧ Sealing material

100A, 100B‧‧‧ scan line driver circuit

110‧‧‧ opposite substrate

111‧‧‧ scan line

112‧‧‧Information line

113‧‧‧Power supply line

120‧‧‧Precharge circuit

140‧‧‧second electrode power cord

150‧‧‧Assisted electrode

150c, 150e‧‧‧ individual electrodes

150d‧‧‧Connected electrode

200,200A,200B‧‧‧data line driver circuit

A‧‧‧ effective range

B‧‧‧around range

C, F‧‧‧ range

E1~E5‧‧‧

G‧‧‧ signal input terminal

P‧‧‧ unit circuit

Fig. 1(A) is a plan view showing a part of a configuration of a light-emitting device according to a first embodiment of the present invention, and (B) is a plan view showing a state in which a supplementary electrode and a pixel electrode are formed in a state of (A).

Figure 2 shows a detailed circuit diagram of the pixel circuit of the same device.

Figure 3 is a partial enlarged view of Figure 1 (B).

Figure 4 is a cross-sectional view of a portion of the same device.

Figure 5 is a schematic cross-sectional view of a portion of the same device.

Fig. 6 is a view showing a state in which cracks occur in the common electrode in the comparative example.

Fig. 7 is a partial cross-sectional view showing a light-emitting device according to a modification of the first embodiment.

Fig. 8 is a partial cross-sectional view showing a light-emitting device according to a second embodiment of the present invention.

Figure 9 is a schematic cross-sectional view of a portion of the same device.

Fig. 10 is a schematic cross-sectional view showing a portion of a light-emitting device according to a modification of the present invention.

Figure 11 is a schematic cross-sectional view showing a portion of a light-emitting device according to a modification of the present invention.

Fig. 12 is a schematic view showing the layout of a light-emitting device according to a modification of the present invention.

Fig. 13 is a schematic view showing the layout of a light-emitting device according to a modification of the present invention.

Fig. 14 is a perspective view showing the configuration of a portable personal computer using a light-emitting device.

Figure 15 is a perspective view showing the configuration of a portable telephone to which a light-emitting device is applied.

Figure 16 is a perspective view showing the configuration of a portable information terminal to which a light-emitting device is applied.

10‧‧‧Substrate

30‧‧‧Component layer

35‧‧‧Second interlayer insulating film (insulation layer)

72‧‧‧Common electrode (2nd electrode)

80‧‧‧Closed film

90‧‧‧ Sealing material

110‧‧‧ opposite substrate

140‧‧‧second electrode power cord

150b‧‧‧Part 2

E1~E5‧‧‧

G‧‧‧ signal input terminal

P‧‧‧ unit circuit

E1max‧‧‧Maximum location

E4max‧‧‧Maximum location

Claims (10)

A light-emitting device comprising: a substrate; and a plurality of first electrodes provided on the substrate; a second electrode common to the plurality of first electrodes; and a plurality of first electrodes and the second electrode A plurality of light-emitting elements between the light-emitting layers and a plurality of transistors electrically connected to each of the plurality of first electrodes are provided in a light-emitting device of an effective field, and are characterized in that the second electrode is supplied with a potential a second electrode power supply line, and a auxiliary electrode electrically connected to the second electrode and the second electrode power supply line, and the substrate are provided in the vertical direction on the plurality of first electrodes and the plurality of An insulating layer of a layer between the transistors; the second electrode and the insulating layer are provided in a peripheral region of the effective field and an end between the end portion of the substrate and the effective region; and the auxiliary electrode has the foregoing a second electrode connecting portion that is in contact with the second electrode; wherein the second electrode connecting portion covers a surface facing the second electrode of the insulating layer in a peripheral region; and an end of the insulating layer The portion is disposed between the end portion of the substrate and the end portion of the second electrode as viewed in a vertical direction, and the end portion of the second electrode is in a peripheral region of the substrate, and the substrate is Viewed from the vertical direction, overlapping the surface of the second electrode with the insulating layer; The end portion of the auxiliary electrode is disposed between the end portion of the substrate and the end portion of the insulating layer as viewed from the vertical direction on the substrate. The light-emitting device according to claim 1, wherein the auxiliary electrode has a power line connection portion that is in contact with the second electrode power supply line; and the power line connection portion is connected to the substrate, and is viewed from a vertical direction. And disposed between the end of the substrate and the end of the insulating layer. The light-emitting device of claim 2, wherein the plurality of auxiliary electrodes are electrically connected to the second electrode in the effective field; and the plurality of light-emitting elements are arranged parallel to one side of the substrate The light-emitting element rows formed by the plurality of light-emitting elements in the first direction are arranged in a matrix in a plurality of directions intersecting the second direction, and the plurality of auxiliary electrodes are formed by the foregoing The gap of the plurality of light-emitting elements is provided on the outer side from the inner side of the effective area, and is provided on the stripe in the first direction, and is connected to the auxiliary electrode in the peripheral region. The light-emitting device according to claim 3, wherein the auxiliary electrode is connected to the peripheral region, and the plurality of auxiliary electrodes are connected to each other. In the light-emitting device of the third or fourth aspect of the invention, the second electrode power supply line is provided in the peripheral region so as to intersect the first direction. The light-emitting device according to any one of claims 1 to 4, wherein the auxiliary electrode has a light-shielding property. The light-emitting device according to any one of claims 1 to 4, wherein the auxiliary electrode is formed in the same layer as the first electrode. The illuminating device according to any one of claims 1 to 4, further comprising: a peripheral circuit provided in the peripheral area; the peripheral circuit has a transistor constituting the peripheral circuit; and the peripheral circuit is an inspection circuit Any one of a data line drive circuit, a scan line drive circuit, and a precharge circuit; and the auxiliary electrode is formed on the substrate and is superposed on the transistor constituting the peripheral circuit as viewed in a vertical direction. The illuminating device according to any one of the preceding claims, wherein each of the plurality of electromorphic systems has a source electrode and a drain electrode; the power supply line and the source electrode and/or the aforementioned The drain electrode is formed in the same layer. An electronic device characterized by having the light-emitting device according to any one of claims 1 to 9.