TWI455643B - Light emitting device and electronic apparatus - Google Patents

Description

Light-emitting device and electronic machine

The present invention relates to a light-emitting device using a light-emitting element such as an organic EL (electroluminescence) element.

A plurality of light-emitting elements are arranged in an effective range on the substrate, and light-emitting devices such as various wirings are disposed in a range around the effective range. Each of the light-emitting elements has a light-emitting layer formed of a light-emitting material such as an organic EL material held between the first electrode and the second electrode. In many cases, the second electrode is a common electrode provided in common to a plurality of light-emitting elements, and is provided over the entire effective range. However, the impedance of the electrode itself is lower in the surface of the electrode, and the voltage is lowered in the surface of the electrode. The potential applied to the light-emitting element is uneven through the position of the substrate, and the brightness of the light-emitting element may be uneven due to the position. Here, in the related art, a material having a lower resistance than the common electrode is formed, and the auxiliary electrode electrically connected to the common electrode is used to lower the impedance of the common electrode (for example, Patent Document 1).

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-352963

However, the auxiliary electrode is formed by, for example, a light-blocking member such as an aluminum film. Therefore, in order not to shield the light emitted from the light-emitting element, it is desirable to form the range of the gap of the light-emitting element, and it is desirable to use high precision. The location mechanism is formed. On the other hand, the common electrode is formed of a light transmissive material, and is formed in the same range as the entire effective range of the coating. Therefore, the tolerance of the positioning can be obtained as compared with the auxiliary electrode. Therefore, the error of common electrode positioning becomes a problem compared to the auxiliary electrode. Therefore, in order to absorb the error of the common electrode, it is desirable to sufficiently ensure the width of the peripheral range (i.e., the frame range) on the substrate, and the device is prevented from being miniaturized.

Further, a circuit element such as a transistor for controlling light emission of the light-emitting element is disposed under the common electrode or the auxiliary electrode. Therefore, an insulating layer is provided between the common electrode and the auxiliary electrode, and the common electrode and the auxiliary electrode are insulated by the circuit element. However, when the insulating layer includes a step, the portion overlapping the step with the step may cause a break or crack in the electrode. The occurrence of a broken wire or a crack may increase the impedance of the electrode, and the brightness of the light-emitting element may become uneven.

The present invention has been made in view of the above circumstances, and it is possible to provide a light-emitting device capable of suppressing uneven brightness of a light-emitting element while reducing the range of the light-emitting device frame.

In order to solve the above problems, the first light-emitting device of the present invention has an effective range of a plurality of light-emitting elements arranged on a substrate and a peripheral range surrounding the effective range, and each of the light-emitting elements has a first electrode and a second electrode. a light-emitting layer between the electrodes, wherein the second electrode is provided in common to the plurality of light-emitting elements, and has a light-emitting layer of an element layer of a circuit element for controlling light emission of the light-emitting element, and is characterized in that: the second electrode The auxiliary electrode that is electrically connected is disposed on the upper layer of the element layer, and has a portion in which the second electrode and the auxiliary electrode are disposed on the lower layer, and the second electrode and the auxiliary electrode are provided from the circuit element. In the insulating insulating layer, the second electrode covers the effective range and overflows in the peripheral range, and is formed in one form. The auxiliary electrode is formed in the peripheral range by the gap of the plurality of light-emitting elements in the effective range. In some of the peripheral ranges, the end of the second electrode is located further outward than the end of the auxiliary electrode in the surface of the substrate, and is located further outward than the end of the insulating layer.

In the light-emitting device of the present invention, the end of the auxiliary electrode is disposed outside the end of the common electrode. Further, the auxiliary electrode is formed in the effective range and formed by the gap of the light-emitting element. For this reason, it is desirable to form using a high-precision positioning mechanism. In this regard, the common electrode is formed in the same range as the entire effective range of the coating, and the positioning accuracy is not required to be the auxiliary electrode when the common electrode is formed. That is, there are many cases where the auxiliary electrode is formed with an error that is extremely small in total co-energization. Therefore, according to the present invention, compared with the configuration in which the end of the common electrode is disposed on the outer side of the auxiliary electrode, the error of the auxiliary electrode can be reduced, and the size of the frame can be reduced, and the size of the device can be reduced. Then, the auxiliary electrode is configured to have a lower impedance than the second electrode. In particular, the auxiliary electrode is preferably formed of a low-impedance material than the second electrode.

Furthermore, in the first light-emitting device of the present invention, the end of the common electrode is disposed outside the end of the insulating layer. In the auxiliary electrode, the portion overlapping the end of the insulating layer is prone to breakage or cracking caused by the step difference, and the end of the common electrode is formed by the occurrence of a broken wire or a crack extending to the outside. When the auxiliary electrode is broken or cracked, the increase in the impedance value can also be suppressed. Therefore, unevenness in luminance of the light-emitting element can be suppressed. Further, the insulating layer is formed of a material having a moisture permeability such as acrylic. At this time, moisture is entered from the outside by the insulating layer, and there is a fear that the luminescent layer is deteriorated. However, in the present invention, the end of the common electrode is disposed outside the end of the insulating layer, and the insulating layer can be prevented from entering moisture, and deterioration of the light-emitting element can be suppressed. Therefore, it is possible to suppress a decrease in luminance caused by deterioration of the light-emitting element.

According to a preferred aspect of the present invention, in the peripheral region, the second electrode is provided with a second electrode power supply line that supplies a potential, and the auxiliary electrode has a portion that does not overlap the second electrode. A portion connected to the second electrode power supply line. Therefore, only the auxiliary electrode and the second electrode power supply line are overlapped, and the potential is supplied to the second electrode by the overlapping portion. On the other hand, due to the influence of the step of the insulating layer, the auxiliary electrode is broken or cracked, and the impedance value is increased. At this time, the voltage supplied to the common electrode is significantly lowered. However, in the present invention, since the end of the common electrode is disposed outside the end of the insulating layer, the auxiliary electrode is likely to be broken or cracked (that is, a portion overlapping the step of the end of the insulating layer), and overflows in the second portion. The power supply line side of the electrode. Therefore, the auxiliary electrode is likely to be broken or cracked through the step of the end of the insulating layer, and the other portions of the common electrode and the auxiliary electrode can be supplied from the potential of the second electrode power supply line. Therefore, unevenness in luminance of the light-emitting element can be suppressed.

In the above aspect, the second electrode is preferably disposed on the lower layer than the auxiliary electrode. According to this aspect, the second electrode cannot be affected by the step of the auxiliary electrode, and the disconnection or crack of the second electrode can be suppressed.

Further, it is preferable that each of the second electrode and the auxiliary electrode has a portion that is connected to the second electrode power supply line. According to this aspect, the second electrode has a portion connected to the second electrode power supply line, and the impedance of the second electrode power supply line to the second electrode can be reduced, and the light-emitting element caused by the voltage drop can be suppressed. Uneven brightness.

According to another preferred aspect of the present invention, in the peripheral region, the second electrode is provided with a second electrode power supply line for supplying a potential, and the auxiliary electrode has an upper surface connected to the second electrode, and the lower surface is connected to the second electrode. The second electrode is connected to the power supply line. In addition to the auxiliary electrode, the second electrode has a portion that overlaps the power supply line for the second electrode, and the impedance from the second electrode power supply line to the second electrode can be reduced, and the luminance unevenness of the light-emitting element caused by the voltage drop can be suppressed.

Furthermore, the second light-emitting device of the present invention belongs to a light-emitting device having an effective range in which a plurality of light-emitting elements are arranged and a peripheral range surrounding the effective range, and corresponding to each of the plurality of light-emitting elements. a plurality of first electrodes provided in common to the second electrode of the plurality of light-emitting elements, and intervening in the light-emitting layers of the plurality of first electrodes and the second electrodes, and electrically connected to the second electrode An electrode, an element layer disposed to control the light-emitting circuit element of the light-emitting element, and an insulating layer interposed between the second electrode or the auxiliary wiring and the element layer, wherein the insulating layer is provided to include the entire effective range and the peripheral range In the first range of at least a part of the first electrode, the second electrode is provided in the entire effective range, and overlaps with the first range, and overflows in the first direction over the first range in the peripheral range. In the second range, the auxiliary electrode is provided in a gap between the plurality of light-emitting elements in the effective range, and in the peripheral range, the second range is larger than the range of the first range, and the The inner side of the range of 1 and the outer side of the range of the first aspect are provided so as to be outside the range of the second range.

In the present invention, the second range of the common electrode is provided, and the first range overflow side of the insulating layer is provided, and the auxiliary electrode system is provided outside the second range. Further, the auxiliary electrode is formed in an effective range and is formed by the gap range of the light-emitting element. Therefore, in the formation of the auxiliary electrode, a mechanism for positioning with high precision is used, and the common electrode is formed in the same range as the entire effective range of the coating. When the common electrode is formed, the positioning accuracy is not required to be the level of the auxiliary electrode. Therefore, since the error of the auxiliary electrode is extremely smaller than the total energization, according to the present invention, the end of the auxiliary electrode is arranged closer to the outer side than the end of the auxiliary electrode, and the error of the auxiliary electrode can be reduced, thereby narrowing the frame range. The device can be miniaturized.

Further, in the auxiliary electrode, the portion overlapping the end of the insulating layer is liable to be broken or cracked due to the step difference. In the light-emitting device of the present invention, the second range is longer than the first range overflow side, and the end of the common electrode It is formed by extending to the outside rather than the line where the auxiliary electrode is broken or cracked. Therefore, when the auxiliary electrode is broken or cracked, the increase in the impedance value can be suppressed. Therefore, unevenness in luminance of the light-emitting element can be suppressed. Further, the insulating layer is formed of a material having a moisture permeability such as acrylic. At this time, moisture is entered from the outside by the insulating layer, and there is a fear that the luminescent layer is deteriorated. However, in the present invention, The end of the common electrode is disposed outside the end of the insulating layer, thereby preventing the insulating layer from entering moisture, and suppressing deterioration of the light-emitting element. Therefore, it is possible to suppress a decrease in luminance caused by deterioration of the light-emitting element.

In a preferred embodiment of the second light-emitting device, the plurality of light-emitting elements are arranged in a matrix, and the auxiliary electrode has a gap passing through the plurality of light-emitting elements and extends from the inside to the outside of the effective range. In the first direction, a plurality of individual electrodes in a stripe shape are provided. Preferably, the auxiliary electrode has a connection electrode that connects the plurality of individual electrodes to each other in the peripheral range. At this time, the end of the insulating layer in the first direction is overlapped with the connection electrode, and the connection electrode is disposed.

In a further preferred embodiment of the second light-emitting device, the plurality of light-emitting elements are arranged in a matrix, and the auxiliary electrode passes through a gap of the plurality of light-emitting elements and reaches the second range from the inside of the effective range. On the outer side, a plurality of individual electrodes in a stripe shape are provided along the first direction.

Further, in the above-described second light-emitting device, it is preferable that the second electrode is a second electrode power supply line that supplies a potential, and is provided in the foregoing direction so as to intersect with the first direction. In the peripheral range, the second electrode power supply line is electrically connected to the auxiliary electrode. In this case, the second electrode power supply line is provided on the outer side of the first range.

Furthermore, the present invention can also be used as an electronic device having the first or second light-emitting device of any of the above aspects. According to this electronic machine, the above can be achieved Any effect.

Hereinafter, embodiments of the present invention will be described with reference to additional drawings. However, in the drawing, the size ratio of each part is changed as appropriate to the actual person.

<A-1: Form of the first embodiment>

Fig. 1(A) is a schematic plan view showing a part of a configuration of a light-emitting device 1 according to a first embodiment of the present invention, and Fig. 1(B) is a state in which the auxiliary electrode 150 and the pixel electrode 76 are further formed after the state of Fig. 1(A). Plan of the state. As shown in FIG. 1(A), the light-emitting device 1 includes a substrate 10 and a flexible wiring substrate 20. A connection terminal is formed in an end portion of the substrate 10, and a connection terminal formed between the connection terminal and the flexible wiring substrate 20 is formed by a film-like adhesion containing conductive particles called an ACF (anisotropie eonductive film). The agent is fixed by pressing. Moreover, the data line drive circuit 200 is provided in the flexible wiring board 20, and various power supply voltages are supplied to the board|substrate 10 by the flexible wiring board 20.

In the substrate 10, a peripheral range B of the effective range A and the outer side (that is, between the effective range A of the outer periphery of the substrate or the substrate 10) is set. In the peripheral range B, scanning line driving circuits 100A and 100B and precharge circuit 120 are formed. The precharge circuit 120 sets the potential of the data line 112 to a specific potential circuit before the write operation. Scan line driver circuit 100A and 100B, the precharge circuit 120 is a peripheral circuit around the effective range A. However, the peripheral circuit may include an inspection circuit (not shown) for inspecting the unit circuit P or the wiring, and the data line driving circuit 200 may be a peripheral circuit provided in the peripheral range B.

In the effective range A, the complex scanning line 111 and the complex data line 112 are formed, and in the vicinity of each of the intersections, a complex unit circuit (pixel circuit) P is provided. The unit circuit P includes an OLED (organic light emitting diode) element, and receives power from the current supply line 113. The complex current supply line 113 is connected to the first electrode power supply line 130.

2 is a detailed circuit diagram showing a unit circuit P of the light-emitting device 1. Each unit circuit P includes an n-channel type transistor 68, a p-channel type transistor 60, a capacitor element 69, and a light-emitting element (OLED element) 70. The source electrode of the p-channel type transistor 60 is connected to the current supply line 113, and the drain electrode is connected to the anode of the light-emitting element 70. Further, a capacitor element 69 is provided between the source electrode and the gate electrode of the transistor 60. The gate electrode of the n-channel transistor 68 is connected to the scan line 111, and the source electrode is connected to the data line 112, which is connected to the gate electrode of the transistor 60.

The unit circuit P is such that when the scanning line 111 corresponding to the unit circuit is selected by the scanning line driving circuits 100A and 100B, the transistor 68 turns on the capacitor element 69 which holds the data signal supplied from the data line 112. . Then, the transistor 60 is supplied to the light-emitting element 70 corresponding to the data signal level current. Thereby, the light-emitting element 70 emits light in accordance with the brightness of the data signal level.

Further, as shown in FIG. 1(A), in the outer peripheral portion side of the peripheral range B (that is, between the outer periphery of the substrate or the substrate 10 and the peripheral portion B), a U-shaped second electrode power supply line 140 is formed. The second electrode power supply line 140 is a wiring for supplying a power source voltage (in this example, Vss: ground line) to the cathode (second electrode) of the light-emitting element as will be described later. However, instead of the second electrode power supply line 140 being disposed in a U shape (that is, along the three sides of the substrate 10), the two sides facing each other along the substrate 10 may be provided. That is, in the example of the drawing, the scanning line driving circuits 100A and 100B may be disposed.

The light-emitting element 70 has an illuminating function layer (including a light-emitting layer) 74 between the pixel electrode 76 (anode) and the common electrode 72 (cathode) (see FIG. 4). The common electrode 72 is formed to span a range of the effective range A as shown in FIG. 1(B) and a part of the peripheral range B (second range). Further, the auxiliary electrode 150 connecting the common electrode 72 and the second electrode power supply line 140 is formed to cover the peripheral circuit in the peripheral range B. The auxiliary electrode 150 includes a first portion 150a of the auxiliary electrode provided in the effective range A and a second portion 150b of the auxiliary electrode provided in the peripheral range B. In the effective range A, the first portion 150a of the auxiliary electrode 150 and the pixel electrode 76 are not in contact with each other, and the first portion 150a of the auxiliary electrode 150 is formed in a lattice shape. That is, the first portion 150a of the auxiliary electrode 150 is disposed in the gap of the light-emitting element 70. In the present specification, the auxiliary electrode is a conductor that is electrically connected to the common electrode 72 and is connected to the common electrode 72 to lower the resistance of the common electrode 72. To be more specific, Figure 3 shows an enlargement of a portion of Figure 1 (B).

The light-emitting device 1 of this embodiment is configured to emit in the form of a top emission, and the light from the light-emitting function layer 74 is emitted through the common electrode 72. Common electrode 72 is formed of a transparent material. For this reason, the peripheral range B cannot be shielded from light by the common electrode 72. On the other hand, in the auxiliary electrode 150, since the conductive and light-shielding metal is used, the auxiliary electrode 150 can be shielded from light. Thereby, light is incident on the peripheral circuit, and the occurrence of photocurrent can be suppressed. Further, the auxiliary electrode 150 can be obtained by forming the pixel electrode 76 of the effective range A in the same manner. Therefore, in the peripheral range B, it is not necessary to add special light shielding properties, and special engineering is added.

4 is a partial cross-sectional view showing the light-emitting device 1. In the same figure, in the effective range A, the light-emitting element 70 is formed, and on the other hand, in the peripheral range B, the scanning line drive circuit 100A of the peripheral circuit is formed. In the same figure, the upper surface of the light-emitting device 1 serves as an emitting surface for emitting light. As shown in the figure, on the substrate 10, a substrate protective layer 31 is formed on which transistors 40, 50 and 60 are formed. The transistor 40 is of the n-channel type, the transistor 50, and the 60-series p-channel type. The transistor 40, 50 is part of the scanning line driving circuit 100A, and the transistor 60 and the light emitting element 70 are part of the unit circuit P.

The transistors 40, 50, and 60 are provided on the substrate protective layer 31 mainly composed of ruthenium oxide formed on the surface of the substrate 10. In the upper layer of the substrate protective layer 31, germanium layers 401, 501, and 601 are formed. The gate insulating layer 32 is provided on the upper layer of the substrate protective layer 31 in the cap layer 401, 501, and 601. The gate insulating layer 32 is made of, for example, hafnium oxide. In the upper surface of the gate insulating layer 32, gate electrodes 42, 52, and 62 are provided opposite to the germanium layers 401, 501, and 601. In the transistor 40, the gate electrode 401 is doped with a group V element by the gate electrode 401 to form a drain region 40c and a source region 40a. herein The range of undoped group V elements becomes the channel range 40b.

In the transistors 50 and 60, the gate electrodes 52 and 62 are doped with the group III elements by the gate electrodes 52 and 62 to form the drain regions 50a and 60a, and the source. Ranges 50c and 60c. Here, the range of the undoped group III element becomes the channel range 50b and 60b. However, while the gate electrodes 42, 52, and 62 of the transistors 40, 50, and 60 are formed, the scanning line 111 is formed.

The first interlayer insulating layer 33 is formed on the upper layer of the gate insulating layer 32 by covering the gate electrodes 42, 52 and 62. As the material of the first interlayer insulating layer 33, ruthenium oxide or the like is used. Furthermore, the source electrodes 41, 51 and 63, the drain electrode, the source electrode 43, and the drain electrode 61 are in the gate insulating layer 32 and the first interlayer insulating layer 33, and the opening layer is connected to the germanium layer. 401, 501 and 601 are connected. Further, the second electrode power supply line 140, the data line 112, and the current supply line 113 are formed in the same manner as the electrodes. These electrodes and the second electrode power supply line 140 and the like are formed of a material having conductive aluminum or the like.

The circuit protection film 34 is covered with the source electrodes 41, 51, and 63, and the drain electrode, the source electrode 43, the drain electrode 61, and the second electrode power supply line 140 are provided on the upper layer of the first interlayer insulating layer 33. The circuit protection film 34 is formed of, for example, a material having a low gas permeability such as tantalum nitride or ruthenium oxide. Further, such tantalum nitride or lanthanum oxynitride may be an amorphous material and may contain hydrogen. The detachment of hydrogen of the transistors 40, 50, 60, and the like can be prevented via the circuit protection film 34. However, it is also possible to form the circuit protection film 34 under the source electrode or the drain electrode.

The second interlayer insulating film 35 is provided on the upper layer of the circuit protective film 34. Here, the second interlayer insulating film 35 is provided on the source electrodes 41, 51, and 63, the drain electrode, the source electrode 43, the drain electrode 61, and the second electrode power supply line 140, and a pixel electrode 76, which will be described later. Between the auxiliary electrode 150 or the common electrode 72, these achieve an insulating effect. At this time, the film thickness is set without delaying the signal supplied to the scanning line or the signal line. Further, the second interlayer insulating film 35 is more uneven than the lower surface of the counter circuit protective film 34, and it is preferable that the unevenness on the surface opposite to the circuit protective film 34 is small. That is, the second interlayer insulating film 35 is used to flatten the crystals 40, 50, 60, the scanning line 111, the data line 112, the current supply line 113, and the like. The second interlayer insulating film 35 is provided in a range including at least a part of the effective range A and the peripheral range B (first range). The second range (the range in which the common electrode 72 is formed) is a range in which the entire effective range A overlaps with the first range, and the peripheral range B overflows in the in-plane direction of the substrate 10 from the first range. More specifically, in the present embodiment, at least three sides of the left and right sides and the upper side of the second electrode power supply line 140 among the four sides of the substrate 10 are disposed, and the second range is smaller than the first range, and is applied to the substrate 10 The inner and outer sides protrude.

Among the materials of the second interlayer insulating layer 35, for example, an acrylic or polyimine-based organic polymer material is used. At this time, the photosensitive material mixed with the organic resin as a pattern is exposed and patterned in the same manner as the photoresist film. Alternatively, the second interlayer insulating film 35 may be formed by an inorganic material such as cerium oxide or cerium oxynitride via chemical vapor deposition (CVD), and the upper surface may be planarized by an etching method or the like. Inorganic material system When a film is formed by a chemical vapor deposition method, the film thickness is 1 μm or less, and the film thickness is preferably formed by coating because the organic resin is formed by coating as compared with the above. It is more than 2 to 3 μm, and the upper surface is hardly affected by the unevenness of the lower layer, and is suitable as the material of the second interlayer insulating film 35. In particular, when a certain degree of unevenness is allowed, an inorganic material such as cerium oxide or cerium oxynitride can be applied to the second interlayer insulating film 35.

On the second interlayer insulating film 35, the pixel electrode 76 (first electrode) and the first portion 150a of the auxiliary electrode are formed in the effective range A, and the second portion 150b of the auxiliary electrode is formed in the peripheral region B. That is, the pixel electrode 76 and the auxiliary electrode 150 are formed in the same layer and formed using the same material. The pixel electrode 76 of this embodiment is an anode of the light-emitting element 70, and is formed separately from each other by the light-emitting element 70, and penetrates the connection hole of the second interlayer insulating film 35 and the circuit protection film 34, and the drain of the transistor 60. The electrodes 61 are connected. Further, as the material of the anode pixel electrode 76, a material having a large work function is desired, and for example, nickel, gold, platinum, or the like is suitable. These materials are reflective, and the light emitted by the luminescent function layer 74 is reflected toward the common electrode 72. At this time, the auxiliary electrode 150 is also formed of such a material.

Further, the pixel electrode 76 includes a first layer having a light transmittance and conductivity of an oxidized conductive material such as ITO (indium tin oxide), IZO (indium zinc oxide), or ZnO _{2 having a} high work function, and The reflective metal may include, for example, a second layer made of an aluminum film and a first layer provided on the side of the light-emitting function layer. At this time, the auxiliary electrode 150 may have both the first layer and the second layer, and may have any of these layers.

The auxiliary electrode 150 is in the effective range A, and is formed in a lattice shape (first portion 150a) by a gap of the plurality of light-emitting elements 70, and forms a second range of the common electrode 72 in the peripheral range, thereby insulating the second layer. The first range overflow side of the layer 35 (in the present embodiment, the left and right sides and the upper side of the substrate 10) pass through the inner side of the first range and the outer side of the first range and the inner range of the second range, and reach the second range. Formed on the outside (second part 150b). The auxiliary electrode 150 is connected to the second electrode power supply line 140 by forming a connection hole of the circuit protection film 34 in the peripheral range B. As shown in the figure, the second interlayer insulating film 35 is not formed on the second electrode power supply line 140, and only the connection hole is formed in the circuit protection film 34, and the second portion 150b of the auxiliary electrode 150 can be directly in contact with the second electrode. Use power cord 140.

Next, the partition wall 37 is formed. The partition wall 37 is formed by covering the outer edge of each of the pixel electrodes 76, and has an opening 37a. Therefore, each of the openings 37a is superposed on the pixel electrode 76, and the pixel electrode 76 is exposed through the opening 37a in the previous stage of forming the luminescent function layer 74. The partition wall 37 is between the insulating pixel electrode 76 and the common electrode 72 (second electrode) formed later, or between the insulating pixel electrodes 76. By providing the partition walls 37, the respective pixel electrodes 76 can be independently controlled, and a plurality of light-emitting elements can be illuminated with respective specific brightnesses. That is, the partition wall 37 divides a plurality of light-emitting elements. For example, acrylic acid or polyimine or the like is an insulating material of the partition wall 37. At this time, the photosensitive material to be patterned is mixed and patterned by exposure as in the case of the photoresist film. Simultaneous shape in the partition wall 37 Connected to the hole CH. In the effective range A, the first portion 150a of the auxiliary electrode 150 and the common electrode 72 to be described later are connected by the connection hole CH. Moreover, the same layer as the partition wall 37 is not provided in the second portion 150b of the auxiliary electrode 150 in the peripheral range B.

Next, at least the luminescent function layer 74 including the luminescent layer is formed on the pixel electrode 76. An organic EL substance is used in the light-emitting layer. The organic EL material may be a low molecular material or a high molecular material. The other layer constituting the luminescence functional layer 74 may include a part or all of the positive hole implantation layer, the positive hole transport layer, the electron transport layer, the electron implantation layer, the positive hole barrier layer, and the electron blocking layer.

Next, the auxiliary electrode 150 and the light-emitting function layer 74 are covered in the effective range A and the peripheral range B to form the common electrode 72 (second electrode). The common electrode 72 is transparent, and the light from the light-emitting element 70 passes through the common electrode 72 and is emitted in the direction of the upper side in the drawing. In order to operate the common electrode 72 of this embodiment as the cathode of all the light-emitting elements 70, the common electrode 72 is easily injected into the electrons, and is formed by a material having a low work function. For example, aluminum, calcium, magnesium, or lithium metal or such metal compounds. Also, this alloy is expected to use a material having a low work function and a material that stabilizes the material. For example, magnesium and silver alloys are suitable. When these metals or alloys are used for the common electrode 72, in order to obtain light transmittance, the thickness may be reduced.

Further, the common electrode 72 (second electrode) includes a material having a low work function, a material having a low work function, and a first layer which is stabilized by the material, and such as ITO (indium tin oxide) or IZO (indium zinc oxide). Or a second layer which is light-transmitting and conductive by the oxidized conductive material of ZnO ₂ and a first layer provided on the side of the light-emitting function layer. An oxidized conductive material such as ITO, IZO, or ZnO _{2 is} a close material and has a low gas permeability. When the common electrode 72 is formed in such a material, the common electrode 72 is formed in the effective range A and the peripheral range B, so that the peripheral circuits of the unit circuit P and the peripheral range B of the effective range A can be protected by the outside air. This deterioration is suppressed. When the common electrode 72 (second electrode) is configured to include the second layer, the light transmittance and conductivity are superior to those of the first layer material, and the power supply impedance of the common electrode 72 can be greatly reduced. At the same time, the light extraction efficiency by the illuminating function layer can be improved. Further, the common electrode 72 (second electrode) is formed by including a material having a low work function and a first layer formed by stabilizing the material, and a second layer formed of the oxidized conductive material, so that the first layer and the second layer are formed. The layer reaction prevents deterioration of electron implantation efficiency.

Further, before the formation of the common electrode 72, the connection hole CH is formed in the partition wall 37. The first portion 150a of the auxiliary electrode and the common electrode 72 are connected to the effective range A by the connection hole CH. In the effective range A, the first portion 150a (see FIG. 1(B)) in which the auxiliary electrode is formed in a lattice shape can greatly reduce the power supply impedance of the common electrode 72 by connecting the common electrode 72. In addition, the second portion 150b of the auxiliary electrode is in the peripheral range B and is not covered by the partition wall 37, so that the common electrode 72 is in contact with the wide-area surface, so that the connection resistance can be reduced. Therefore, the power supply impedance can be greatly reduced.

Next, the common electrode 72 and the auxiliary electrode 150 are covered to form a sealing film 80. In the sealing film 80, for example, an inorganic material having a low gas permeability such as yttrium oxynitride or cerium oxide having high transparency and good moisture resistance is used. This closed The film 80 covers the entire range of the peripheral circuits (the scanning line driving circuits 100A and 100B having the transistors 40 and 50 and the precharge circuit 120). However, in the outer end edge of the substrate 10, the sealing film 80 is not formed, and in the other end edge, the sealing material 90 is bonded to the circuit protection film 34, and the transparent sealing substrate (opposing substrate) 110 is bonded to the upper portion. The sealing material 90 may be, for example, an adhesive, or may be adhered by an adhesive to maintain the spacer of the opposite substrate 110.

Figure 5 is a schematic cross-sectional view of the range C of Figure 4. That is, in the peripheral range B, the transistor 40, 50 which is a part of the scanning line driving circuit 100 is a cross-sectional view of the outer end portion. For convenience of explanation, the substrate protective layer 31, the gate insulating layer 32, the first interlayer insulating layer 33, the circuit protective film 34, and the transistors 40, 50, and 60 each of which is shown in FIG. The electrode is shown as an element layer 30 in Fig. 5 as a whole. In the upper layer portion of the element layer 30, the second electrode power supply line 140 is formed. As described above, the upper surface of the second electrode power supply line 140 operates as an upper electrode and a contact range. In FIG. 4, in addition to the element layer 30 and the second electrode power supply line 140, the second interlayer insulating film 35, the auxiliary electrode 150, the common electrode 72, the sealing film 80, the sealing material 90, and the counter substrate 110 are displayed. Hereinafter, the relative positional relationship of each layer will be described in detail with reference to this drawing.

However, as described above, the second interlayer insulating film 35 is used for flattening through irregularities generated by a transistor or wiring disposed in the lower layer. In addition, the second interlayer insulating film 35 is formed of an acrylic or polyimide-based insulating organic polymer material, and has circuit elements such as transistors 40, 50, and 60 disposed in the element layer 30. Insulated anode 76 The function of the electrodes such as the common electrode 72 and the auxiliary electrode 150. That is, it functions as an insulating layer for insulating the respective electrodes from the circuit element for controlling the light emission of the light-emitting element.

As shown in FIG. 5, in the upper layer of the element layer 30 including the second electrode power supply line 140, the second interlayer insulating film 35 is formed, and the end E1 of the second interlayer insulating film 35 is connected to the second electrode power supply line 140. The inner end E3 of the dot range is further inside. The second portion 150b of the auxiliary electrode 150 is formed on the upper surface of the second interlayer insulating film 35 and in the range of the end E1 and the end E3 of the insulating layer on the upper surface of the element layer 30 (hereinafter, simply referred to as " Supplementary electrode 150"). Thereby, the auxiliary electrode 150 is connected to the second electrode power supply line 140 and electrically connected to the second electrode power supply line 140. In the illustrated example, the end E4 of the auxiliary electrode 150 coincides with the end of the outer side of the contact range, but it is not necessary to be uniform, and the auxiliary electrode 150 may be formed by covering the contact range. In other words, the end E4 of the auxiliary electrode may be formed outside the end of the contact point range.

However, in the present specification, "inside" and "outer side" indicate the relative positions in the substrate surface when the end E5 of the substrate 10 is used as a reference. Therefore, in the above description, "the distance between the end E1 and the end E1 of the inner end" E1 and the end E5 of the substrate 10 is longer than the distance between the end E2 and the end E5.

A common electrode 72 is formed on the auxiliary electrode 150. The end E2 of the common electrode 72 is outside the end E1 of the second interlayer insulating film 35. On the other hand, the end E2 of the common electrode 72 is located inside the end E4 of the auxiliary electrode 150. Furthermore, the end E2 is smaller than the inner end E3 of the second electrode power supply line 140. side. In other words, the auxiliary electrode 150 is formed on the portion where the common electrode 72 is not formed (outside the end E2), and overlaps the second electrode power supply line 140, and has an electrical connection portion (between the end E3 and the end E4). However, as described above, the auxiliary electrode 150 is formed simultaneously with the pixel electrode 76, and secondly, the partition wall 37 and the light-emitting function layer 74 are sequentially formed, and then the partition wall 37 and the light-emitting function layer 74 are covered to form the common electrode 72.

As described above, a metal having conductivity and light blocking properties is used for the auxiliary electrode 150. Therefore, in the effective range A, the auxiliary electrode 150 and the pixel electrode 76 are not overlapped, and the first portion 150a of the auxiliary electrode 150 is formed in a lattice shape. In other words, in the effective range A, the light emitted from the light-emitting element 70 is not blocked, and the first portion 150a of the auxiliary electrode 150 is disposed only in the gap of the light-emitting element 70. Since the light-emitting elements 70 are arranged at a slight interval from each other, it is preferable that the auxiliary electrode 150 is formed using a high-precision alignment mechanism. On the other hand, since the common electrode 72 is formed of a transparent material, the light-emitting element 70 is covered in the effective range A, and is formed in the effective range A in the same manner. For this reason, the common electrode 72 may be formed using a lower alignment precision than that of the auxiliary electrode 150. However, when the common electrode 72 is formed using the low-precision alignment mechanism, the position of the end E2 of the common electrode 72 may fluctuate.

Here, the position error of the end E2 of the common electrode 72 is set to t1, and the position error of the end E4 of the auxiliary electrode 150 is set to t2. When the auxiliary electrode 150 is used with a higher precision alignment mechanism, it is t1>t2. Further, a single alignment mechanism having the auxiliary electrode 150 to a desired degree of precision is used when both the auxiliary electrode and the common electrode 72 are used. Is t1=t2. Therefore, the error t2 of the auxiliary electrode 150 is lower than the error of the common electrode 72. Conversely, in the latter case, even if t1 < t2, a high-precision alignment mechanism is used, and the error of t1 does not occur. Become a big question. Here, in the present embodiment, the end E4 of the auxiliary electrode 150 is formed outside the end E2 of the common electrode 72. According to this configuration, the error of the auxiliary electrode 150 is determined by the distance from the maximum position E4max (the position at which the end E4 is close to the end E5 side of the substrate 10) to the end E5 on the side E5 of the substrate 10, and the width of the peripheral range B is determined. (ie, you can determine the "border range"). Therefore, the end portion E2 of the common electrode 72 that allows a larger error can be made smaller than the end E4 of the auxiliary electrode 150 on the outer side. That is, the accuracy of forming the alignment mechanism by the common electrode 72 can reduce the influence of the width of the frame. However, the error of the common electrode 72 at the end E5 side of the substrate 10 becomes the maximum position E2max, which is the inner side of the maximum position E4max of the auxiliary electrode 150 on the side of the substrate 10 end E5, and the end E2 and the end E4 are set. The reference position (position at the time of no error) is preferred.

Further, in the above configuration, the auxiliary electrode 150 is formed by coating the end E1 of the second interlayer insulating film 35. For this reason, there is a case where the auxiliary electrode 150 is broken or cracked via the step of the end portion E1. FIG. 6 shows a case where cracks are generated in the auxiliary electrode 150. As shown in FIG. 6, at the end E1 of the second interlayer insulating film 35, a crack I is generated in the auxiliary electrode 150 at a portion where the auxiliary electrode 150 is overlapped. When the crack I is generated, there is a fear that the impedance of the electrode is increased, and the luminance of the light-emitting element 70 becomes uneven. However, in the light-emitting device 1 of the present embodiment, as shown in FIG. 6, the common electrode The end E2 of 72 is located outside the end E1. In other words, the common electrode 72 is closer to the second electrode power supply line 140 than the crack I, and has a portion overlapping the auxiliary electrode 150 (between the end E1 and the end E2), and the crack I auxiliary electrode 150 is completely broken. At this time, the second electrode power supply line 140 can be supplied with a potential and supplied to the common electrode 72. Further, when the impedance value of the auxiliary electrode 150 is increased by the crack I, the current is supplied through the common electrode 72, so that the voltage drop can be suppressed. Therefore, unevenness in luminance of the light-emitting element 70 can be suppressed.

In addition, the second interlayer insulating film 35 is made of a moisture permeable material such as acrylic, and moisture is introduced by the second interlayer insulating film 35, which may cause deterioration of the luminescent material. Here, in the present embodiment, the end E2 of the common electrode 72 is disposed outside the end E1 of the second interlayer insulating film 35. Thereby, moisture is prevented from entering from the end E1, and deterioration of the light-emitting element can be suppressed. Therefore, it is possible to suppress a decrease in luminance of the light-emitting element 70 caused by deterioration of the light-emitting layer of the light-emitting function layer 74.

<A-2: Modification of the first embodiment>

In the above-described embodiment, the configuration in which the auxiliary electrode 150 and the pixel electrode 76 are simultaneously formed will be described, and the pixel electrode 76 may not be formed at the same time. The auxiliary electrode 150 may be formed in the process after the partition wall 37.

Fig. 7 is a partial cross-sectional view showing a light-emitting device 1A of the present modification. As shown in FIG. 7, in the light-emitting device 1A, the second interlayer insulating film 35 and the partition walls 37 are covered to form the auxiliary electrodes 150 (150a, 150b). In the above embodiment, as shown in FIG. 4, the auxiliary electrode 150 has a second layer. The portion between the insulating film 35 and the partition wall 37. On the other hand, in this modification, in the portion of the partition wall 37, the auxiliary electrode 150 is formed on the partition wall 37. Here, the partition wall 37 is the same as the second interlayer insulating film 35, and the common electrode 72 or the auxiliary electrode 150 is operated as an insulating layer separated by the transistors 40, 50, and 60. Further, similarly to the first embodiment, the end E4 of the auxiliary electrode 150 is overlapped with the second electrode power supply line 140, and the end E2 of the common electrode 72 is inside the end E4 of the auxiliary electrode 150, and is formed between the second layers. The outer side of the end E1 of the insulating film 35.

The outline of the manufacturing process of the light-emitting device 1A is as follows. After the second interlayer insulating film 35 is formed, the pixel electrode 76 is formed on the upper layer of the second interlayer insulating film 35. Thereafter, a partition wall 37 is formed on the upper layer of the pixel electrode 76, and the surface of the opening portion 37a of the second interlayer insulating film 35 and the partition wall 37 is removed to form the auxiliary electrode 150. Next, the light-emitting function layer 74 is formed in the space on the pixel electrode 76 partitioned by the partition wall 37 (that is, the opening portion 37a). However, conversely, after the light-emitting function layer 74 is formed, the auxiliary electrode 150 may be formed. Further, the transparent common electrode 72 is formed in the effective range A and the peripheral range B. Thereafter, a sealing film 80 is formed on the common electrode 72. However, in the outer end edge of the substrate 10, the sealing film 80 is not formed, and in the other end edge, the sealing material 90 is bonded to the circuit protective film 34, and the transparent sealing substrate 110 is bonded to the upper portion.

When the auxiliary electrode 150 is formed, if the luminescent function layer 74 is formed, the luminescent function layer 74 is not formed at the time of forming the auxiliary electrode 150, and the micron technique is used for the formation of the auxiliary electrode 150, and the luminescent function layer is not deteriorated. After 74. Therefore, the auxiliary electrode can be formed by micro-shrinking The pattern of 150 can form the auxiliary electrode 150 with the same precision as the wiring of the transistors 40, 50, 60 or the scanning line 111. On the other hand, when the auxiliary electrode 150 is formed after the light-emitting function layer 74 is formed, the auxiliary electrode 150 does not contaminate the light-emitting material, and the auxiliary electrode 150 and the common electrode 72 can be connected.

Further, in the present modification, the common electrode 72 is formed on the upper layer of the auxiliary electrode 150, and the auxiliary electrode 150 having a thicker common electrode 72 is formed, and stress is not applied to the common electrode 72. Therefore, deformation of the common electrode 72 caused by the upper layer stress can be suppressed.

Further, the auxiliary electrode 150 is made of the same material as the common electrode 72, and the auxiliary electrode 150 is made of a material having a higher impedance than the common electrode 72. At this time, since the thickness of the auxiliary electrode 150 is thicker than the common electrode 72, the impedance of the auxiliary electrode 150 is lower than the impedance of the common electrode 72.

<B: Form of the second embodiment>

Next, a photovoltaic device 1B according to a second embodiment of the present invention will be described. In the light-emitting device 1B, the light-emitting device 1 (FIG. 4) or the light-emitting device 1A of the first embodiment is removed except that the end E2 of the common electrode 72 is removed from the inner end E3 of the second electrode power supply line 140. Figure 7) is the same. Therefore, the description is suitably omitted.

Fig. 8 is a partial cross-sectional view showing the light-emitting device 1B. As shown in FIG. 8, in the light-emitting device 1B, as in the first embodiment, the end E2 of the common electrode 72 is formed on the outer side of the end surface E1 of the second interlayer insulating film 35 in the plane of the substrate 10. More than the end of the auxiliary electrode 150 E4 Formed on the inside. Therefore, the effects of the above embodiments can be obtained.

Further, in the light-emitting device 1B, the end E2 of the common electrode 72 is located outside the end E3 of the inner side of the second electrode power supply line 140. In the first and second embodiments, the second electrode power supply line 140 and the common electrode 72 are electrically connected by the auxiliary electrode 150. However, in the first embodiment, the common electrode 72 is connected to the auxiliary electrode 150 on the inner side of the inner end E3 of the second electrode power supply line 140. In the second embodiment, the terminal E3 and the end E2 are also supplemented. The electrodes 150 are connected. Therefore, the impedance of the power supply line 149 from the common electrode 72 to the second electrode can be reduced, and the luminance unevenness of the light-emitting element 70 caused by the voltage drop can be suppressed as compared with the configuration of the first embodiment.

<C: Third embodiment>

Next, a light-emitting device according to a third embodiment of the present invention will be described. Fig. 9 is a partial cross-sectional view showing a light-emitting device 2A of the present embodiment. As shown in FIG. 9, the auxiliary electrode 150 is formed on the common electrode 72 and is formed in surface contact, and covers the auxiliary electrode 150 and the common electrode 72 to form a sealing film 80. The light-emitting device 2A is the same as the light-emitting device 1A (FIG. 7) according to the modification of the first embodiment except that the common electrode 72 is formed in the lower portion of the auxiliary electrode 150. Therefore, the description is suitably omitted.

Similarly to the above-described light-emitting device 1A, in the present embodiment, the auxiliary electrode 150 is formed on the upper portion of the partition wall 37 in the portion of the partition wall 37. Therefore, the partition wall 37 is the same as the second interlayer insulating film 35, and will be co-energized. The pole 72 or the auxiliary electrode 150 operates as an insulating layer separated by the transistors 40, 50, 60.

The outline of the manufacturing process of the light-emitting device 2A is as follows. After the second interlayer insulating film 35 is formed, the pixel electrode 76 is formed on the upper layer of the second interlayer insulating film 35. Thereafter, a partition wall 37 is formed on the upper layer of the pixel electrode 76, and a light-emitting function layer 74 is formed in a space (i.e., the opening portion 37a) of the pixel electrode 76 partitioned by the partition wall 37. Further, the common electrode 72 having transparency is formed in the effective range A and the peripheral range B. Thereafter, the auxiliary electrode 150 is formed to exclude the upper layer of the opening 37a on the common electrode 72, and the sealing film 80 is formed. However, on the outer edge of the substrate 10, the sealing film 80 is not formed, and in the other end, the sealing material 90 is bonded to the circuit protection film 34, and the transparent sealing substrate 110 is bonded to the upper portion.

Figure 10 is a schematic cross-sectional view showing the range F of Figure 9. As shown in FIG. 9 and FIG. 10, in the light-emitting device 2A, a part of the transistors 40, 50 of the scanning line driving circuit 100, in the in-plane outer side of the substrate 10, and the end E2 of the common electrode 72 are compared. The end E1 of the second interlayer insulating film 35 is formed on the outer side, and is formed on the inner side from the end E4 of the auxiliary electrode 150. Therefore, the same effects as those of the first embodiment described above can be obtained.

Further, since the common electrode 72 is formed on the lower layer of the auxiliary electrode 150, the possibility of occurrence of disconnection or cracking of the common electrode 72 can be reduced by the influence of the step of the auxiliary electrode 150 as compared with the configuration of the second embodiment. . Therefore, unevenness in luminance of the light-emitting element 70 caused by a voltage drop in the common electrode 72 can be suppressed.

<D: Fourth Embodiment>

Next, a light-emitting device 2B according to a fourth embodiment of the present invention will be described. In the light-emitting device 2B, the common electrode 72 is formed on the lower layer of the auxiliary electrode 150, and the end E2 of the common electrode 72 is located outside the end E3 of the inner side of the second electrode power supply line 140. However, the light-emitting device 2A is the same as the light-emitting device 2A of the third embodiment except for this point. Therefore, the description is suitably omitted.

Figure 11 is a partial cross-sectional view showing the light-emitting device 2B. As shown in FIG. 11, as in the first embodiment, the end E2 of the common electrode 72 is formed on the outer side of the end surface E1 of the second interlayer insulating film 35 in the surface of the substrate 10, and is provided on the outer side of the auxiliary electrode 150. The end E4 is formed on the inner side. Therefore, the same effects as those of the first embodiment described above can be obtained.

Further, in the light-emitting device 2B, the common electrode 72 is formed on the lower layer of the auxiliary electrode 150, and the end E2 of the common electrode 72 is located outside the end E3 of the inner side of the second electrode power supply line 140. Therefore, the possibility of occurrence of disconnection or cracking of the common electrode 72 can be reduced by the influence of the step of the auxiliary electrode 150. Further, since the common electrode 72 has a portion overlapping the second electrode power supply line 140, both the auxiliary electrode 150 and the common electrode 72 are electrically connected to the contact range of the second electrode power supply line 140. Therefore, unevenness in luminance of the light-emitting element 70 caused by voltage drop can be suppressed.

<E: Modification>

(1) In the first to fourth embodiments described above, although the power is to be shared The upper layer of the electrode 72 or the auxiliary electrode 150 is covered with the sealing film 80, and the layer including the element layer 30, the second electrode power supply line 140, the second interlayer insulating film 35, the common electrode 72, and the auxiliary electrode 150 is configured as a foreign layer. The composition of the gas shield is omitted, but the constitution of the seal film 80 may be omitted.

Fig. 12 is a schematic cross-sectional view showing a light-emitting device 1E according to the present modification. As shown in FIG. 12, in the light-emitting device 1E, the sealing film 80 is not provided, and the layer structure formed on the substrate 10 is protected via the sealing material 90 and the opposite substrate 110. However, a desiccant (not shown) that absorbs moisture may be disposed on the inner side of the counter substrate 110, or a configuration in which the desiccant is embedded may be used in the counter substrate 110 itself. Further, in the replacement of the opposite substrate 110 and the sealing material 90, a closed can is used.

Fig. 13 is a schematic cross-sectional view showing another light-emitting device 1F according to the present modification. As shown in FIG. 13, in the light-emitting device 1F, the layer structure can be protected by the outside air by filling the moisture-proof filler 65 between the layer structures formed on the opposite substrate 110 and the substrate 10. As the moisture-proof filler 65, it is preferable that the light-transmitting property is low in moisture absorption, and an epoxy-based or urethane-based pressure-sensitive adhesive or the like can be used.

(2) In the above-described first to fourth embodiments, the second electrode power supply line 140 is formed in a U shape in the peripheral range B. However, the present invention is not limited thereto, and may be appropriately modified.

14 and 15 are schematic explanatory views for explaining the layout of each of the light-emitting devices of the present modification. In the drawings, the same reference numerals are given to the same portions as those of the above-described embodiments, and the description is omitted as appropriate.

As shown in FIG. 14(A), in the light-emitting device 3A, along the substrate 10 The second electrode power supply line 140 is disposed on each of the two edge portions. Further, the signal input terminal G is disposed along the side of the remaining two sides, and the first electrode power supply line 130 is disposed inside the surface of the substrate 10 of the signal input terminal G. In the inner side of the second electrode power supply line 140, along the effective range A, the scanning line driving circuits 100A and 100B are arranged along the respective effective ranges A, and are supplied by the second electrode power supply line 140 while being input by the signal. Terminal G, for external control signals. Further, in the inner side of the first electrode power supply line 130, the data line drive circuit 200 is disposed along the effective range A. The data line driving circuit 200 is powered by the first electrode power supply line 130 one by one, and receives an external control signal from the signal input terminal G, and supplies it to each data line.

In this example, the second interlayer insulating film 35 covers the effective range A, all of the scanning line driving circuits 100A and 100B, and the data line driving circuit 200, and a part of the first electrode power supply line 130 (in the example of the figure, When the side where the signal input terminal G is disposed is the longitudinal direction, all of the portions extending in the longitudinal direction are formed in a direction orthogonal to the longitudinal direction, and a part of the extending portion is formed toward the lower side of the substrate 10. Further, the common electrode 72 covers the effective range A and all of the scanning line driving circuits 100A and 100B, and the left and right ends on the side of the second electrode power supply line 140 are disposed outside the end of the second interlayer insulating film 35, and It is formed inside the second electrode power supply line 140 or overlapped with the second electrode power supply line 140. On the other hand, the middle end and the lower side (signal input terminal G side) end of the common electrode 72 are located outside the effective range A and are located inside the data line driving circuit 200, and the upper side is closer to the second layer. The end of the insulating film 35 is located on the outer side. However, when the first electrode power supply line 130 and the second electrode power supply line 140 are formed in another layer, the common electrode 72 is located outside the lower end of the second interlayer insulating film 35, and is completely covered. The two-layer insulating layer 35 may also be used. In other words, in the present modification, the second range in which the common electrode 72 is formed is at least the left and right sides and the upper side of the substrate 10, and is more likely to emerge than the first range formed by the second interlayer insulating film 35.

The auxiliary electrode is formed in the same direction as the side on which the signal input terminal G is disposed, and is formed as a stripe-shaped individual electrode 150c having a length. Specifically, the individual electrode 150c is in the effective range A, and passes through the gap of the light-emitting element 70 in the peripheral range B, the inside of the first range and the outside of the first range, and reaches the second range through the inner range of the second range. Further, the outer side of the range extends to a range overlapping the second electrode power supply line 140, and is electrically connected to the second electrode power supply line 140. That is, the end is located outside the end of the second interlayer insulating film 35 and is located outside the end of the common electrode 72. According to this modification, the same effects as those of the above embodiments can be obtained.

Next, as shown in FIG. 14(B), the light-emitting device 3B has the same configuration as that of the light-emitting device 3A except that the scanning line driving circuit and the data line driving circuit are opposite in position. In other words, in the light-emitting device 3B, the scanning line driving circuit 100 is disposed along the effective range A in the peripheral range B on the lower side of the substrate 10, and the data line driving circuits 200A and 200B are disposed on the left and right sides of the substrate 10. Range B. The second electrode power supply line 140 is disposed outside each of the data line drive circuits 200A and 200B, and is disposed on two sides (left and right sides) along the substrate 10, and the individual electrodes 150c are arranged. The stripe shape is formed in a direction orthogonal to the second electrode power supply line 140 (that is, in the same direction as the signal input terminal G is disposed). Similarly to the light-emitting device 3A, the left and right ends of the individual electrode 150c are located outside the end of the second interlayer insulating film 35, and are located outside the end of the common electrode 72, and are formed to overlap the second electrode power supply line 140. . Therefore, the same effects as those of the above-described embodiment can be obtained via the light-emitting device 3B.

However, in any of the light-emitting devices 3A and 3B, as shown on the right side of FIG. 14(A), the individual electrodes 150c are formed in a stripe-shaped plurality of individual electrodes 150c and a peripheral range B, and have connection electrodes 150d that connect the plurality of individual electrodes 150c. Also. At this time, the connection electrode 150d has an inner portion that overlaps the first range, and an outer portion that passes through the outer side of the first range and that is inside the second range, and reaches the outer portion of the second range, and further, the power supply line for the second electrode 140 is formed by overlapping. In other words, the connection electrode 150d is not only overlapped with the second electrode power supply line 140, but also the end of the second interlayer insulating film 35 and the end of the common electrode 72 are overlapped with the connection electrode 150d.

15(A) and (B) show other layout examples of the light-emitting device. As shown in Fig. 15(A), in the light-emitting device 4A, a signal input terminal G is disposed along the lower edge of the substrate 10, and the second electrode power supply line 140 is disposed in a U-shape on the inner side. Further, in the inner side of the second electrode power supply line 140, the first electrode power supply line 130 is disposed in a U shape, and the data line driving circuit 200 is disposed between the first electrode power supply line 130 and the effective range A. . The scanning line driving circuits 100A and 100B are disposed along the respective ranges of the left and right sides of the effective range A.

As shown in the figure, the second interlayer insulating film 35 is coated with the effective range A All of the entire scanning line driving circuits 100A and 100B and the data line driving circuit 200 and a part of the first electrode power supply line 130 (in the example, when the side of the signal input terminal G is disposed as the length direction) , which is formed by extending a portion existing in the longitudinal direction). The common electrode 72 is formed to be almost the same as the second interlayer insulating film 35, and is completely covered with the second interlayer insulating film 35. That is, in all the side sides of the rectangular range, the end of the common electrode 72 is located on the outer side of the second interlayer insulating film 35 in the plane of the substrate 10. Therefore, in the present modification, the second range of the common electrode 72 is formed on all sides of the substrate 10, and is in the in-plane outer direction of the substrate 10, which is more serious than the first range in which the second interlayer insulating film 35 is formed. Out.

As shown in the figure, the auxiliary electrode is formed as a stripe-shaped individual electrode 150e having a length extending in a direction parallel to the scanning line driving circuits 100A and 100B. The end of the individual electrode 150e on the lower end side of the substrate 10 is formed by overlapping and connecting the second electrode power supply line 140. However, in this example, the individual electrode 150e intersects with the first electrode power supply line 130, and is formed in each layer via the first electrode power supply line 130 and the second electrode power supply line 140, and the individual electrode 150e does not have the first electrode. The power supply line 130 is connected, and is formed only by being connected to the second electrode power supply line 140. Similarly, the common electrode 72 and the first electrode power supply line 130 are overlapped, and the first electrode power supply line 130 and the second electrode power supply line 140 are formed in individual layers, and the common electrode 72 and the first electrode power supply line are formed. 130 becomes a component of non-electrical contact. On the other hand, the end of the individual electrode 150e on the upper end side of the substrate 10 is located outside the end (first range) of the second interlayer insulating film 35. The end (second range) of the common electrode 72 is located outside. Therefore, the same effects as those of the above embodiments can be obtained via the light-emitting device 4A.

Next, as shown in Fig. 15(B), the light-emitting device 4B has the same configuration as that of the light-emitting device 4A except for the portion where the scanning line driving circuit and the data line driving circuit are opposite to each other. In other words, in the light-emitting device 4B, the scanning line driving circuit 100 is disposed along the effective range A in the peripheral range B on the lower side of the substrate 10, and the data line driving circuits 200A and 200B are disposed on the left and right sides of the substrate 10. Peripheral range B. The second electrode power supply line 140 is disposed on the lower end side of the substrate 10, and is disposed in a U shape on the inner side of the signal input terminal G. The individual electrodes 150e are formed in stripes parallel to the direction of the data line driving circuits 200A and 200B. shape. Similarly to the light-emitting device 4A, the upper and lower ends of the individual electrodes 150e are located outside the end of the second interlayer insulating film 35, and the lower end is overlapped with the second electrode power supply line 140 while the end of the common electrode 72 is located outside. Connected to form. Therefore, the same effects as those of the above embodiment can be obtained via the light-emitting device 4B.

As shown in FIGS. 14(A), 14(B), 15(A), and 15(B), in the peripheral range B, the individual electrodes 150c and 150e cross each other in the direction in which the second electrode power supply line 140 extends. The direction is extended in stripes. In other words, in FIG. 1 to FIG. 3, the auxiliary electrode 150 is also extended in the extending direction of the second electrode power supply line 140, and extends only in the direction in which the extending direction of the second electrode power supply line 140 intersects. In other words, the auxiliary electrode 150 is not necessarily formed in parallel with the extending direction of the second electrode power supply line 140, and is formed by crossing the second electrode power supply line 140. can.

<F: Electronic Machine>

Next, an electronic device using the light-emitting device of the present invention will be described. 16 to 18 illustrate the form of an electronic device in which the light-emitting device of any of the above aspects is used as a display device.

Fig. 16 is a perspective view showing the configuration of a portable personal computer using a light-emitting device. The personal computer 2000 is provided with light-emitting devices 1, 1A, 1B, 1E, 1F, 2A, 2B, 3A, 3B, 4A, 4B for displaying various portraits, and a main body portion 2010 in which the power switch 2001 or the keyboard 2002 is provided. The light-emitting devices 1, 1A, 1B, 1E, 1F, 2A, 2B, 3A, 3B, 4A, 4B use the organic light-emitting diode element as the light-emitting element 70, and can display a wide field of view and are easy to see. Picture.

Figure 17 is a perspective view showing the configuration of a portable telephone to which a light-emitting device is applied. The portable telephone 3000 is provided with a plurality of operation buttons 3001 and a reel button 3002, and light-emitting devices 1, 1A, 1B, 1E, 1F, 2A, 2B, 3A, 3B, 4A, 4B for displaying various portraits. The screen of the light-emitting devices 1, 1A, 1B, 1E, 1F, 2A, 2B, 3A, 3B, 4A, 4B is displayed via the operation of the scroll button 3000.

Fig. 18 is a perspective view showing the configuration of a portable information terminal (PDA: Personal Digital Assistants) to which a light-emitting device is applied. The information carrying terminal 4000 is provided with a plurality of operation buttons 4001 and a power switch 4002, and light-emitting devices 1, 1A, 1B, 1E, 1F, 2A, 2B, 3A, 3B, 4A, 4B for displaying various portraits. Address or trip when operating the power switch 4002 The information is displayed on the light-emitting devices 1, 1A, 1B, 1E, 1F, 2A, 2B, 3A, 3B, 4A, 4B.

However, as an electronic device to which the light-emitting device of the present invention is applied, in addition to those shown in FIGS. 16 to 18, a digital camera, a television, a video recorder, a car navigation device, a pager, an electronic notebook, Electronic paper, computer, word processor, workstation, videophone, POS terminal, printer, scanner, photocopying machine, video recorder, machine with touch panel, etc. Further, the use of the light-emitting device of the present invention is not limited to the display of an image. For example, in an image forming apparatus of an optical writing type printer or an electronic photocopier, an optical head that is exposed to a photoreceptor that is to be formed in an image such as paper is used, and the optical head can be used as such. The illuminating device of the invention.

1,1A,1B,1E,1F,2A,2B,3A,3B,4A,4B‧‧‧Lighting device

10‧‧‧Substrate

70‧‧‧Lighting elements

34‧‧‧ circuit protection film

35‧‧‧Second interlayer insulating film (insulation layer)

37‧‧‧ partition wall

37a‧‧‧ Opening

65‧‧‧Moisture-proof filler

72‧‧‧Common electrode (2nd electrode)

74‧‧‧Lighting function layer

76‧‧‧ pixel electrode (first electrode)

80‧‧‧Closed film

90‧‧‧ Sealing material

100A, 100B‧‧‧ scan line driver circuit (peripheral circuit)

110‧‧‧ opposite substrate

111‧‧‧ scan line

112‧‧‧Information line

113‧‧‧Power supply line

120‧‧‧Precharge circuit

140‧‧‧second electrode power cord

150‧‧‧Assisted electrode

150c, 150e‧‧‧ individual electrodes

150d‧‧‧Connected electrode

200,200A,200B‧‧‧data line driver circuit

A‧‧‧ effective range

B‧‧‧around range

C, F‧‧‧ range

E1~E5‧‧‧

G‧‧‧ signal input terminal

P‧‧‧ unit circuit

Fig. 1(A) is a plan view showing a part of a configuration of a light-emitting device according to a first embodiment of the present invention, and (B) is a plan view showing a state in which a supplementary electrode and a pixel electrode are formed in a state of (A).

Figure 2 shows a detailed circuit diagram of the pixel circuit of the same device.

Figure 3 is a partial enlarged view of Figure 1 (B).

Figure 4 is a cross-sectional view of a portion of the same device.

Figure 5 is a schematic cross-sectional view of a portion of the same device.

Fig. 6 is a view showing a state in which the auxiliary electrode 150 of the same device is cracked.

Figure 7 is a partial cross section of a light-emitting device according to a modification of the first embodiment. Figure.

Fig. 8 is a schematic cross-sectional view showing a portion of a light-emitting device according to a second embodiment of the present invention.

Fig. 9 is a partial cross-sectional view showing a light-emitting device according to a third embodiment of the present invention.

Figure 10 is a schematic cross-sectional view of a portion of the same device.

Figure 11 is a schematic cross-sectional view showing a portion of a light-emitting device according to a fourth embodiment of the present invention.

Figure 12 is a schematic cross-sectional view showing a portion of a light-emitting device according to a modification of the present invention.

Figure 13 is a schematic cross-sectional view showing a portion of a light-emitting device according to a modification of the present invention.

Fig. 14 is a schematic view showing the layout of a light-emitting device according to a modification of the present invention.

Fig. 15 is a schematic view showing the layout of a light-emitting device according to a modification of the present invention.

Fig. 16 is a perspective view showing the configuration of a portable personal computer using a light-emitting device.

Figure 17 is a perspective view showing the configuration of a portable telephone to which a light-emitting device is applied.

Figure 18 is a perspective view showing the configuration of a portable information terminal to which a light-emitting device is applied.

1‧‧‧Lighting device

10‧‧‧Substrate

30‧‧‧Component layer

35‧‧‧Second interlayer insulating film (insulation layer)

72‧‧‧Common electrode (2nd electrode)

80‧‧‧Closed film

90‧‧‧ Sealing material

110‧‧‧ opposite substrate

140‧‧‧second electrode power cord

150b‧‧‧Part 2 of the supplementary electrode

E1~E5‧‧‧

T1, t2‧‧‧ error range

Claims (12)

A light-emitting device having an effective range of a plurality of light-emitting elements arranged on a substrate and a peripheral range surrounding the effective range, wherein each of the light-emitting elements has a light-emitting layer between the first electrode and the second electrode, and the first The second electrode is a light-emitting device that is provided in the plurality of light-emitting elements, and has an element layer that is a circuit element that controls light emission of the light-emitting element, and has an auxiliary electrode electrically connected to the second electrode and disposed on The second element and the auxiliary electrode are disposed on the lower layer, and the second electrode and the auxiliary electrode are insulated from the circuit element, and the second electrode is Covering the effective range and overflowing the peripheral range, the auxiliary electrode is formed in the effective range, and is formed in one of the peripheral ranges by the gap of the plurality of light-emitting elements, and in the peripheral range, The end of the second electrode is the end of the auxiliary electrode, and is located in the plane of the substrate, At the same time the inner side than the end of the insulating layer positioned outside more persons. The light-emitting device according to the first aspect of the invention, wherein the second electrode is provided with a second electrode power supply line for supplying a potential, and the auxiliary electrode is not to overlap the second electrode; The part is connected to the power supply line for the second electrode. Such as the illuminating device of claim 1 or 2, wherein The second electrode is disposed on the lower layer than the auxiliary electrode. In the light-emitting device of the third aspect of the invention, each of the second electrode and the auxiliary electrode has a portion connected to the second electrode power supply line. In the light-emitting device according to the first aspect of the invention, the second electrode is provided with a second electrode power supply line for supplying a potential, and the auxiliary electrode has an upper surface connected to the second electrode, and the lower surface is connected to the second electrode. A portion connected to the second electrode power supply line. A light-emitting device comprising: a light-emitting device having an effective range of a plurality of light-emitting elements arranged on a substrate and a peripheral range surrounding the effective range, wherein the light-emitting device includes: a plurality of the plurality of light-emitting elements provided in correspondence with each of the plurality of light-emitting elements And an electrode disposed in common with the second electrode of the plurality of light-emitting elements; a light-emitting layer interposed between the plurality of first electrodes and the second electrode; and a auxiliary electrode electrically connected to the second electrode; An element layer of a circuit element that controls light emission of the light-emitting element; and an insulating layer that insulates the second electrode or the auxiliary electrode from the element layer; the insulating layer is provided to include at least a part of the effective range and at least a part of the peripheral range The scope of the first, The second electrode is provided in the entire effective range, and overlaps with the first range, and the auxiliary electrode is in the range of the second range that overflows in the first direction from the first range in the peripheral range. The effective range is provided by a gap of the plurality of light-emitting elements, and in the peripheral range, the second range is larger than the range of the first range, and the inner side of the first range and the first one are The outside of the range is set to the outside of the range of the second range, and is set to the outside of the second range. The light-emitting device of claim 6, wherein the plurality of light-emitting elements are arranged in a matrix, and the auxiliary electrode has a gap passing through the plurality of light-emitting elements and extends from the inside to the outside of the effective range. In the first direction, a plurality of individual electrodes in a stripe shape are provided. The light-emitting device of claim 7, wherein the auxiliary electrode has a connection electrode in which the plurality of individual electrodes are connected to each other in the peripheral range. The light-emitting device of claim 8, wherein the end of the insulating layer in the first direction is overlapped with the connection electrode, and the connection electrode is disposed. The light-emitting device of claim 6, wherein the plurality of light-emitting elements are arranged in a matrix, and the auxiliary electrode passes through a gap of the plurality of light-emitting elements and reaches the second range from the inside of the effective range. Outer side, along In the first direction, a plurality of individual electrodes in a stripe shape are provided. The light-emitting device according to any one of the sixth aspect, wherein the second electrode is a second electrode power supply line that supplies a potential, and is disposed to intersect with the first direction In the peripheral range, the second electrode power supply line is electrically connected to the auxiliary electrode. The light-emitting device according to claim 11, wherein the second electrode power supply line is provided outside the first range.