JP4545385B2 - Method for manufacturing light emitting device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a light-emitting device using a light-emitting element in which fluorescence or phosphorescence is obtained by applying an electric field to an element in which a film containing an organic compound is provided between a pair of electrodes, and a manufacturing method thereof. Note that a light-emitting device in this specification refers to an image display device, a light-emitting device, or a light source (including a lighting device). Also, a module in which a connector such as an FPC (Flexible printed circuit) or TAB (Tape Automated Bonding) tape or TCP (Tape Carrier Package) is attached to the light emitting device, or a module in which a printed wiring board is provided at the end of the TAB tape or TCP In addition, a module in which an IC (integrated circuit) is directly mounted on a light emitting element by a COG (Chip On Glass) method is also included in the light emitting device.
[0002]
[Prior art]
A light-emitting element using an organic compound having characteristics such as thin and light weight, high-speed response, and direct current low-voltage driving as a light emitter is expected to be applied to a next-generation flat panel display. In particular, a display device in which light emitting elements are arranged in a matrix is considered to be superior to a conventional liquid crystal display device in that it has a wide viewing angle and excellent visibility.
[0003]
The light-emitting mechanism of a light-emitting element is such that electrons injected from a cathode and holes injected from an anode emit light in a layer containing an organic compound by applying a voltage with a layer containing the organic compound sandwiched between a pair of electrodes. It is said that it recombines at the center to form a molecular exciton, which emits energy and emits light when the molecular exciton returns to the ground state. Singlet excitation and triplet excitation are known as excited states, and light emission is considered to be possible through either excited state.
[0004]
For a light-emitting device formed by arranging such light-emitting elements in a matrix, driving methods such as passive matrix driving (simple matrix type) and active matrix driving (active matrix type) can be used. However, when the pixel density increases, the active matrix type in which a switch is provided for each pixel (or one dot) is considered to be advantageous because it can be driven at a lower voltage.
[0005]
In addition, organic compounds that can be said to be the center of a light-emitting element, which is a layer containing an organic compound (strictly, a light-emitting layer), have been studied for low-molecular materials and polymer-based materials. Attention has been focused on polymer materials that are easier to handle and have higher heat resistance than system materials.
[0006]
As a method for forming these organic compounds, a method such as a vapor deposition method, a spin coating method, and an ink jet method is known. As a method for realizing full color using a polymer material, a spin method is used. Coating methods and ink jet methods are particularly well known.
[0007]
However, when the spin coating method is used, an organic compound is formed on the entire film formation surface. Therefore, an organic compound is formed only at a position where film formation is desired and a film is not formed at a place where film formation is not required. Film formation is difficult.
[0008]
Further, in an active matrix light-emitting device, a driving circuit formed on a substrate is formed with wiring for inputting an electrical signal from an external power source, and a cathode, an anode, and an organic compound formed in a pixel portion. Since the wiring for electrically connecting the light emitting element composed of the layer containing the organic compound and the external power supply is formed, the organic compound is formed in the connection portion (terminal portion) of these wirings to the external power supply If this is done, there is a problem that an ohmic contact with the external power source cannot be obtained. In particular, when a layer containing an organic compound is formed using a spin coating method, it is difficult to route an electrode (cathode or anode) provided on the layer containing the organic compound to the terminal portion.
[0009]
[Problems to be solved by the invention]
Therefore, the present invention provides a method for selectively forming a polymer organic compound layer, and an electrode (cathode or anode) provided on the organic compound layer is electrically connected to a wiring extending from the terminal portion. Provide a connection structure to be connected.
[0010]
In addition, an ink-jet method known as a method for selectively forming a polymer organic compound can coat organic compounds emitting three types (R, G, B) at a time. Since the film accuracy is poor and it is difficult to control, uniformity cannot be obtained and variations tend to occur. Causes of variations in the ink jet method include variations in nozzle pitch, variations in ink flight curve, stage alignment accuracy, timing variations in ink ejection and stage movement, and the like. For example, implementation conditions such as clogging an inkjet nozzle due to an internal viscosity resistance of an ink prepared by dissolving an organic compound in a solvent, or ink ejected from the nozzle does not land at a desired position And a problem in practical use in which a dedicated device having a high-precision stage, an automatic alignment mechanism, an ink head, and the like is required and costs are increased. In addition, since ink spreads after landing, a certain margin is required as an interval between adjacent pixels, which makes high definition difficult.
[0011]
Therefore, the present invention provides a method for selectively forming a polymer material layer that is simpler than the case of using an inkjet method in an active matrix light-emitting device using a polymer organic compound, and Another object of the present invention is to easily form a structure in which an organic compound layer is not formed at a connection portion of a wiring connected to an external power source.
[0012]
In the light emitting device, the incident external light (light outside the light emitting device) is reflected by the back surface of the cathode (the surface in contact with the light emitting layer) at the non-light emitting pixel, and the back surface of the cathode acts like a mirror. Then, there was a problem that the external scenery was reflected on the observation surface (the surface facing the observer). In addition, in order to avoid this problem, a device has been devised to attach a circularly polarizing film on the observation surface of the light emitting device so that no external scenery is reflected on the observation surface, but the circularly polarizing film is very expensive. For this reason, there is a problem in that the manufacturing cost is increased.
[0013]
[Means for Solving the Problems]
In the present invention, after a film made of a polymer material is formed on the entire surface of the lower electrode (first electrode) by a coating method, the upper electrode (second electrode) is formed by a vapor deposition method using a vapor deposition mask. The film made of the polymer material is etched in a self-aligned manner by plasma etching using the upper electrode as a mask, and the polymer material layer can be selectively formed.
[0014]
Further, an auxiliary electrode (third electrode) is formed to connect the upper electrode to the wiring extending to the terminal electrode. Further, the upper electrode may be made thin as long as it can withstand the etching process by plasma, and the resistance may be lowered by an auxiliary electrode formed thereon. The auxiliary electrode may be a metal wiring made of a metal material, or a conductive paste (nano paste, hybrid paste, nano metal ink, etc.) or an adhesive containing conductive fine particles.
[0015]
The configuration of the invention disclosed in this specification is, as shown in FIG. 1 and FIG.
Between the first substrate having an insulating surface and the second substrate having a light-transmitting property, a first electrode, a layer containing an organic compound in contact with the first electrode, and a layer containing the organic compound A light emitting device having a pixel portion having a plurality of light emitting elements having a second electrode in contact therewith, a drive circuit, and a terminal portion,
The terminal portion is disposed on the first substrate so as to be located outside the second substrate;
The first substrate and the second substrate are bonded by an adhesive in which a plurality of kinds of conductive fine particles having different diameters are mixed, and the second electrode and the wiring from the terminal portion are electrically connected. The light-emitting device is characterized in that the light-emitting devices are connected to each other.
[0016]
In addition, as shown in FIG.
Between the first substrate having an insulating surface and the second substrate having a light-transmitting property, a first electrode, a layer containing an organic compound in contact with the first electrode, and a layer containing the organic compound A light emitting device having a pixel portion having a plurality of light emitting elements having a second electrode in contact therewith, a drive circuit, and a terminal portion,
The terminal portion is disposed on the first substrate so as to be located outside the second substrate;
The first substrate and the second substrate are bonded by an adhesive in which fine particles made of an inorganic material and conductive fine particles having a diameter larger than the fine particles are mixed, and the second electrode; A light-emitting device characterized in that wiring from a terminal portion is electrically connected.
[0017]
In addition, as shown in FIG. 2 and FIG.
A pixel portion including a plurality of light-emitting elements each including a first electrode, a layer containing an organic compound in contact with the first electrode, and a second electrode in contact with the layer containing the organic compound; and a terminal portion. A light emitting device comprising:
The end face of the layer containing the organic compound and the end face of the second electrode are coincident,
Between the terminal portion and the pixel portion, the second electrode and a wiring extending from the terminal portion are electrically connected with an adhesive containing conductive particles. Is a light emitting device.
[0018]
In addition, as shown in FIG.
A pixel portion including a plurality of light-emitting elements each including a first electrode, a layer containing an organic compound in contact with the first electrode, and a second electrode in contact with the layer containing the organic compound; and a terminal portion. A light emitting device comprising:
The end face of the layer containing the organic compound and the end face of the second electrode are coincident,
Between the terminal portion and the pixel portion, the second electrode and a wiring extending from the terminal portion are connected by a third electrode that covers the second electrode. The light emitting device is characterized.
[0019]
In the above structure, the third electrode is a metal material.
In the above structure, the second electrode and the third electrode are a cathode or an anode.
[0020]
In each of the above structures, the second electrode has the same pattern shape as that of the layer containing the organic compound.
[0021]
In each of the above structures, the layer containing the organic compound is a polymer material. Alternatively, in each of the above structures, the layer containing the organic compound is a laminate of a layer made of a high molecular material and a layer made of a low molecular material.
[0022]
In each of the above structures, an end portion of the first electrode is covered with an insulator, and has a curved surface having a first radius of curvature at an upper end portion of the insulator, and a lower end portion of the insulator And a curved surface having a second radius of curvature, wherein the first radius of curvature and the second radius of curvature are 0.2 μm to 3 μm.
[0023]
In each of the above structures, the first electrode is a light-transmitting material and is an anode or a cathode of the light-emitting element.
[0024]
In each of the above structures, the layer containing the organic compound is a material that emits white light, and a light-emitting device that is combined with a color filter, or the layer containing the organic compound is a material that emits monochromatic light, The light-emitting device is characterized by being combined with a color conversion layer or a colored layer.
[0025]
Further, the configuration of the invention for realizing the above structure is shown in FIG.
A method for manufacturing a light emitting device having a light emitting element having an anode, a layer containing an organic compound in contact with the anode, and a cathode in contact with the layer containing the organic compound,
Forming a film containing an organic compound made of a polymer material by a coating method on the light-transmitting first electrode;
A step of selectively forming a second electrode made of a metal material by a vapor deposition method in which the vapor deposition material is heated on the film containing the organic compound;
Etching the layer containing the organic compound in a self-aligned manner by etching with plasma using the second electrode as a mask;
And a step of selectively forming a third electrode made of a metal material so as to cover the second electrode.
[0026]
In the structure related to the manufacturing method, the second electrode and the third electrode are a cathode or an anode. In the structure related to the manufacturing method, the third electrode can be formed by an evaporation method or a sputtering method.
[0027]
In addition, the configuration of another invention related to the manufacturing method
A method for manufacturing a light emitting device having a light emitting element having an anode, a layer containing an organic compound in contact with the anode, and a cathode in contact with the layer containing the organic compound,
Forming a film containing an organic compound made of a polymer material by a coating method on the light-transmitting first electrode;
A step of selectively forming a second electrode made of a metal material by a vapor deposition method in which the vapor deposition material is heated on the film containing the organic compound;
Etching the film containing the organic compound in a self-aligned manner by etching with plasma using the second electrode as a mask;
A method for manufacturing a light-emitting device, comprising: connecting the second electrode and a wiring extending from a terminal portion with an adhesive containing conductive particles.
[0028]
In addition, the configuration of another invention related to the manufacturing method
A method for manufacturing a light emitting device having a light emitting element having an anode, a layer containing an organic compound in contact with the anode, and a cathode in contact with the layer containing the organic compound,
Forming a thin film transistor on a first substrate;
Forming a first electrode connected to the thin film transistor;
Forming a film containing an organic compound made of a polymer material on the first electrode by a coating method;
A step of selectively forming a second electrode made of a metal material by a vapor deposition method in which the vapor deposition material is heated on the film containing the organic compound;
Etching the layer containing the organic compound in a self-aligned manner by etching with plasma using the second electrode as a mask;
Connecting the second electrode and the wiring extending from the terminal portion with an adhesive containing conductive particles, and simultaneously bonding the first substrate and the second substrate. This is a method for manufacturing a light emitting device.
[0029]
In each of the above structures related to a manufacturing method, the plasma is generated by exciting one or more kinds of gases selected from Ar, H, F, or O.
[0030]
In each of the above structures related to a manufacturing method, the first electrode is an anode or a cathode of the light-emitting element which is electrically connected to a TFT.
[0031]
Note that a light-emitting element (EL element) includes a layer containing an organic compound (hereinafter referred to as an EL layer) from which luminescence (Electro Luminescence) generated by applying an electric field is obtained, an anode, and a cathode. Luminescence in an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning from a triplet excited state to a ground state, which are produced according to the present invention. The light emitting device can be applied to either light emission.
[0032]
In the light emitting device of the present invention, the screen display driving method is not particularly limited, and for example, a dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used.
Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. The video signal input to the source line of the light-emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be designed in accordance with the video signal as appropriate.
[0033]
The conductive paste may be formed by various coating methods (screen printing method, spin coating method, dip coating method, etc.). Among them, the nanometal ink can be formed by an ink jet method.
[0034]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
[0035]
(Embodiment 1)
A top view of the active matrix light-emitting device is shown in FIG. A cross-sectional view taken along dotted line XX ′ in FIG. 1A is shown in FIG. Here, a light emitting element 23 having a laminated structure made of a polymer material that emits white light will be described as an example.
[0036]
1A and 1B, the pixel portion 12 and the driver circuit (gate-side driver circuits 14 and 15 and the source-side driver circuit 13) provided over the substrate having an insulating surface include a plurality of TFTs ( (Not shown). Note that. The TFT provided in the pixel portion 12 is an element that controls a current flowing through the EL layer 10 that emits light, and is connected to the first electrode 19 and the power supply line 16.
[0037]
In the pixel portion 12, a plurality of light emitting elements 23 including a first electrode 19, a second electrode 11, and a layer 10 containing an organic compound sandwiched between these electrodes are arranged, and a first light emitting element 23 connected to each light emitting element. One electrode 19 is regularly arranged. The first electrode 19 is an anode (or cathode) of the organic light emitting element, and 11 is a second electrode, that is, a cathode (or anode) of the organic light emitting element. When a light-transmitting conductive material is used for the second electrode 11 and a metal material is used for the first electrode 19, light from the light-emitting element 23 can be extracted through the sealing material. On the other hand, when a light-transmitting conductive material is used as the first electrode 19 and a metal material is used as the second electrode, light can be extracted in the opposite direction. In the configuration in FIG. 1, light can be taken out in either direction. However, when light from the light emitting element 23 is taken out through the sealing material, the light is transmitted as the sealing material 20 and the conductive adhesive 22. It is essential to have sex.
[0038]
The layer 10 containing an organic compound has a laminated structure. Typically, a stacked structure of a hole transport layer / a light emitting layer / an electron transport layer is provided on the anode. This structure has very high luminous efficiency, and most of the light emitting devices that are currently under research and development employ this structure. In addition, a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are sequentially laminated on the anode. Good structure. You may dope a fluorescent pigment | dye etc. with respect to a light emitting layer. These layers may all be formed using a low molecular weight material, or may be formed using a high molecular weight material. Note that in this specification, all layers provided between a cathode and an anode are collectively referred to as a layer containing an organic compound (EL layer). Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are all included in the EL layer. The layer containing an organic compound (EL layer) may also contain an inorganic material such as silicon.
[0039]
Further, both ends of the first electrode 19 and the space between them are covered with an organic insulator 18 (also called a barrier or a bank). Furthermore, the organic insulator 18 may be covered with an inorganic insulating film.
[0040]
Further, a terminal electrode is formed on the terminal portion, and has a connection wiring 17 extending from the terminal electrode. The connection wiring 17 is electrically connected to the second electrode 11 with a conductive adhesive 22. In addition, since the organic compound layer is etched in a self-aligning manner using the second electrode 11 as a mask, the end faces of the second electrode 11 and the organic compound layer 10 are coincident with each other, and are in contact with the end face and have a conductive adhesive 22. Is provided. The conductive adhesive 22 includes conductive fine particles 22b such as silver particles and copper particles and a spacer 22a, and further seals the light emitting element 23 by adhering the sealing material 20 thereto. Further, as the conductive adhesive 22, a thermosetting resin or an ultraviolet curable resin may be used. However, when a thermosetting resin is used as the conductive adhesive 22, it is necessary to appropriately select a material having a firing temperature in a range in which the organic compound-containing layer 10 does not deteriorate, and when an ultraviolet curable resin is used. Needs to use a light-transmitting material as a sealing material.
[0041]
The spacer 22a may be an inorganic insulating material or an organic insulating material, and a plurality of types having different particle diameters may be used. Further, if the spacer 22a is an inorganic insulating material coated with a low-resistance metal film such as gold (for example, conductive fine particles obtained by uniformly plating gold on the surface of plastic fine particles having a uniform particle diameter), The spacer can be called conductive fine particles.
[0042]
FIG. 1 shows an example in which the diameter of the conductive fine particles 22b is larger than the diameter of the spacer 22a. By deforming a large particle size when the sealing material 20 is pressure-bonded, using a large particle size as an elastic organic material coated with a metal film on the surface and a small particle size as an inorganic material You may make surface contact. FIG. 22 shows an example in which the diameter of the conductive fine particle 1022b is smaller than the diameter of the spacer 1022a. In FIG. 22, it is only necessary that the second electrode 11 and the connection wiring 17 are connected to each other so that electrical connection can be performed. Therefore, it is necessary to uniformly distribute the conductive fine particles 1022 b in the conductive adhesive 1022. Instead, they may be densely packed near the second electrode 11 and the connection wiring 17 by gravity.
[0043]
Moreover, if the adhesive agent 22 which has electroconductivity is used, the sealing material 20 will be adhere | attached, the light emitting element 23 will be sealed, and the electrical connection with the connection wiring 17 and the 2nd electrode 11 will be performed simultaneously. And the throughput can be improved.
[0044]
Although FIG. 1 shows an example in which the conductive adhesive 22 is formed on the entire surface so as to cover the pixel portion, there is no particular limitation, and the adhesive 22 may be partially formed. Alternatively, a layer of a material layer containing conductive fine particles such as a silver paste, a copper paste, a gold paste, or a Pd paste and an adhesive containing a spacer or a filler may be used. In the case of stacking, after the electrical connection between the connection wiring 17 and the second electrode 11 is first performed by forming a material layer containing conductive fine particles, an adhesive containing a spacer or filler is used. The light emitting element 23 is sealed by adhering the sealing material 20.
[0045]
Moreover, the sealing material 20 is affixed by the spacer and the filler so that the space | interval of about 2-30 micrometers may be maintained, and all the light emitting elements are sealed. Although not shown here, a recess is formed in the sealing material 20 by a sandblast method or the like, and a desiccant is disposed in the recess. Further, it is preferable to perform deaeration by annealing in vacuum immediately before the sealing material 20 is attached. In addition, when the sealing material 20 is attached, it is preferably performed in an atmosphere containing an inert gas (rare gas or nitrogen).
[0046]
Further, when the electrical resistivity of the conductive adhesive is relatively high, an electrode is formed on the sealing material 20 in advance, and the conductive adhesive 22 is electrically connected to the adhesive. It may be connected to reduce the resistance. In this case, it is preferable to use an inorganic insulating material coated with a low-resistance metal film such as gold as the spacer 22a. The distance from the sealing material 20 is maintained at the particle size of the spacer 22a, and at the same time, the second electrode 11 is used. And the electrode on the sealing material 20 and the connection wiring 17 and the electrode on the sealing material 20 can be electrically connected. Further, when a plurality of types having different particle sizes are used, a large particle size is used as an organic material having elasticity, and a small particle size is used as an inorganic material. The electrode may be brought into surface contact with the electrode on the sealing material 20 by deforming it.
[0047]
(Embodiment 2)
Here, FIG. 2 shows a configuration example different from FIG. 1 in which a conductive adhesive is formed in a large area. For simplification, in FIG. 2, the same portions as those in FIG. 1 are used. In FIG. 2, the configuration up to the second electrode 11 is the same as that in FIG.
[0048]
In the present embodiment, an example in which the conductive material 32 is partially formed and the sealing material 31 is formed separately is shown. Electrical connection between the connection wiring 17 and the second electrode 11 is performed by the conductive material 32. Since the layer containing an organic compound is etched in a self-aligning manner using the second electrode 11 as a mask, the end surfaces of the second electrode 11 and the layer 10 containing the organic compound are coincident with each other, and are in contact with the end surface to be a conductive material 32. Is provided.
[0049]
In FIG. 2, as the conductive material 32, conductive paste or conductive ink represented by silver paste or copper paste, or nanometal ink (Ag, Au, Pd having a particle diameter of 5 to 10 nm are dispersed at a high concentration without agglomeration. Independently dispersed ultrafine particle dispersion). For example, as the conductive material 32, the main component is made of silver-plated copper powder, phenol resin, dimethylene glycol monomethyl ether, and the like, and the specific resistance value is 5 × 10. ^-Four Ω · cm or less, adhesive strength 0.8 kg / mm ² The above may be used. Further, as the conductive material 32, a silver-based conductive agent (modified polyolefin resin containing flat silver powder having a particle diameter of 0.5 to 1 μm) that is fast drying may be used.
[0050]
In the case where a solvent is used as the conductive material 32, there is a concern about the generation of vapor due to heat and contamination of the layer containing the organic compound, but the present invention provides a sealing material between the conductive material 32 and the pixel portion 12. 31 is provided to prevent contamination of the layer containing the organic compound. Therefore, it is preferable to form the conductive material 32 after the sealing material 31 is formed and bonded to the sealing material 20. Note that the order in which the sealing material 31 and the conductive material 32 are formed is not particularly limited. After the conductive material 32 is formed, the sealing material 31 may be formed and bonded to the sealing material 20.
[0051]
A filler is mixed in the sealing material 31, and the sealing material 20 is bonded to the sealing material 31 with a uniform interval. Further, a spacer may be mixed in addition to the filler. Further, as shown in FIG. 2A, the sealing material 31 may be formed so as to partially overlap the gate side driving circuits 14 and 15.
[0052]
Further, light can be extracted from the light emitting element 23 in either direction in the configuration in FIG. In the configuration of FIG. 2, since there is no conductive material above the pixel portion, when the light from the light emitting element 23 is taken out through the sealing material, an opaque material may be used as the conductive material. The sealing material 20 shall have translucency.
[0053]
Further, this embodiment mode can be freely combined with Embodiment Mode 1.
[0054]
(Embodiment 3)
Here, FIG. 3 shows a configuration example different from FIGS. 1 and 2 where the sealing material is bonded. For simplification, in FIG. 3, the same portions as those in FIG. 1 are used. In FIG. 3, the configuration up to the second electrode 11 is the same as in FIG.
[0055]
In this embodiment, an example in which the conductive material 42 is partially formed and sealed with a protective film is shown. The conductive material 42 makes electrical connection between the connection wiring 17 and the second electrode 11.
In addition, since the layer containing an organic compound is etched in a self-aligning manner using the second electrode 11 as a mask, the end surfaces of the second electrode 11 and the layer 10 containing the organic compound are coincident with each other, and are in contact with the end surface. Is provided.
[0056]
Similar to the conductive material 32 shown in the second embodiment, a conductive paste or conductive ink typified by a silver paste or a copper paste is used as the conductive material 42 in FIG. Alternatively, a nanometal ink (independently dispersed ultrafine particle dispersion in which Ag, Au, and Pd having a particle diameter of 5 to 10 nm are dispersed at a high concentration without agglomerating) capable of forming a pattern by the ink jet method is used as the conductive material 42. Good. The nanometal ink is baked at 220 ° C to 250 ° C.
[0057]
After forming the conductive material 42, the protective film 41 is formed. The protective film 41 is an insulating film mainly composed of silicon nitride or silicon nitride oxide obtained by a sputtering method (DC method or RF method), or a thin film mainly composed of carbon obtained by a PCVD method. If a silicon target is used and formed in an atmosphere containing nitrogen and argon, a silicon nitride film can be obtained. A silicon nitride target may be used. Further, the protective film 41 may be formed using a film forming apparatus using remote plasma. In addition, when light emission is allowed to pass through the protective film, the protective film is preferably as thin as possible.
[0058]
In the present invention, the thin film mainly composed of carbon is a DLC film (Diamond like Carbon) having a thickness of 3 to 50 nm. DLC films are short-range ordered as bonds between carbons, SP ^Three Although it has a bond, it has an amorphous structure macroscopically. The composition of the DLC film is 70 to 95 atomic% for carbon and 5 to 30 atomic% for hydrogen, and is very hard and excellent in insulation. Such a DLC film is also characterized by low gas permeability such as water vapor and oxygen. It is also known to have a hardness of 15 to 25 GPa as measured by a microhardness meter.
[0059]
The DLC film can be formed by a plasma CVD method (typically, an RF plasma CVD method, a microwave CVD method, an electron cyclotron resonance (ECR) CVD method, etc.), a sputtering method, or the like. Whichever film formation method is used, the DLC film can be formed with good adhesion. The DLC film is formed by placing the substrate on the cathode. Alternatively, a dense and hard film can be formed by applying a negative bias and utilizing ion bombardment to some extent.
[0060]
The reaction gas used for film formation includes hydrogen gas and hydrocarbon-based gas (for example, CH _Four , C ₂ H ₂ , C ₆ H ₆ And the like, and ionized by glow discharge, and the ions are accelerated and collided with a negative self-biased cathode to form a film. By doing so, a dense and smooth DLC film can be obtained. The DLC film is an insulating film that is transparent or translucent to visible light. In the present specification, transparent to visible light means that the visible light transmittance is 80 to 100%, and translucent to visible light is a visible light transmittance of 50 to 80%. Refers to that.
[0061]
In addition, when a silicon nitride film is formed in contact with a film made of a transparent conductive film by sputtering, impurities (In, Sn, Zn, etc.) contained in the transparent conductive film may be mixed into the silicon nitride film. By forming a silicon oxide film as a layer in between, impurities can be prevented from entering the silicon nitride film. By forming the buffer layer with the above structure, impurities (In, Sn, etc.) from the transparent conductive film can be prevented from mixing, and an excellent protective film free of impurities can be formed.
[0062]
Further, after the protective film is formed, a sealing material may be formed and bonded to the sealing material in order to further improve the hermeticity.
[0063]
Further, this embodiment mode can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.
[0064]
(Embodiment 4)
Here, a procedure for forming a light-emitting element will be briefly described below with reference to FIGS. For simplification, in FIG. 4, the same parts as those in FIG. 1 are used.
[0065]
First, a TFT (not shown here), a first electrode 19, a connection wiring 17, and an insulator 18 are formed on a substrate, and then a layer 10 containing an organic compound is formed by a coating method using spin coating. Bake by vacuum heating. Note that in the case where a layer containing an organic compound is stacked, film formation and baking may be repeated.
[0066]
Next, the second electrode 11 made of a metal material is selectively formed by vapor deposition using the vapor deposition mask 50. (FIG. 4B) In FIG. 4B, the example in which the vapor deposition is performed in a state where the distance between the metal mask and the layer containing the organic compound is opened is shown;
[0067]
Next, the layer containing the organic compound is etched in a self-aligning manner using the second electrode 11 as a mask. Here, etching is selectively performed using plasma generated by exciting one or more kinds of gases selected from Ar, H, F, and O. However, it is important to select a material or a film thickness that can withstand the plasma of the second electrode 11 as appropriate. By enabling the selective formation of the polymer material layer according to the present invention, it is possible to easily form a structure in which a layer containing an organic compound is not formed at a connection portion of a wiring connected to an external power source. .
[0068]
Through the steps so far, the state shown in FIG. 4C is obtained. In this state, the second electrode 11 is not connected anywhere and is in a floating state. Therefore, the connection wiring 17 is electrically connected in a later process. As a method of electrically connecting the second electrode 11 to the connection wiring 17, the conductive adhesive 22 shown in the first embodiment may be used, or the second embodiment and the second embodiment. The conductive materials 32 and 42 shown in FIG.
[0069]
In the present embodiment, the third electrode 51 made of a low-resistance metal material is formed as a method for electrically connecting the second electrode 11 to the connection wiring 17. (FIG. 5B) A top view so far is shown in FIG.
[0070]
The third electrode 51 may be appropriately formed by sputtering, vapor deposition, or PCVD, and it is preferable to use a metal material having a lower electrical resistivity than the material of the second electrode 11. For example, as the third electrode 51, poly-Si, W, WSi doped with an impurity element imparting conductivity type is used. _X An element selected from Al, Ti, Mo, Cu, Ta, Cr, or Mo, or a film mainly composed of an alloy material or compound material containing the element as a main component, or a laminated film thereof. It is said. Here, the third electrode 51 is an electrode composed of a laminate (specifically, a laminate of TiN, Al, and TiN) having a nitride layer or a fluoride layer as the uppermost layer. Therefore, light from the light emitting element is extracted through the first electrode 19.
[0071]
Further, the same material as that of the second electrode 11 may be used as the third electrode 51, and in that case, the film thickness is made larger than that of the second electrode 11 to reduce the resistance. Is preferred. Further, when the same material as that of the second electrode 11 is used as the third electrode 51, the thickness of the second electrode 11 can be further reduced.
[0072]
In the steps after the formation of the third electrode 51, a light-emitting element may be sealed by forming a protective film or attaching a sealing material.
[0073]
Further, since the cross-sectional shape of the insulator 18 made of an organic material shown in FIG. 5B is important, it will be described below. When an organic compound film is formed on the insulator 18 by a coating method, or when a metal film to be a cathode is formed by a vapor deposition method, the lower end or the upper end of the insulator 18 does not have a curved surface. As shown in FIG. 18, a film formation defect in which a convex portion is formed at the upper end portion of the insulator 18 occurs. Therefore, the present invention has a curved surface having a first radius of curvature at the upper end of the insulator 18 as shown in FIGS. 17 and 5B, and further has a second radius of curvature at the lower end of the insulator 18. It is characterized by having a shape having a curved surface. The first radius of curvature and the second radius of curvature are both preferably 0.2 μm to 3 μm. According to the present invention, coverage of an organic compound film or a metal film can be improved, and defects called shrink, in which a light emitting region is reduced, can be reduced. Furthermore, shrinkage can be reduced by forming a silicon nitride film or a silicon nitride oxide film over the insulating film 18. The taper angle on the side surface of the insulator 18 may be 45 ° ± 10 °.
[0074]
Examples of the insulator 18 include inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), or these materials. Lamination or the like can be used, but as shown in FIGS. 17 and 5B, the upper end portion of the insulator 18 has a curved surface having a first radius of curvature, and the second end portion of the insulator 18 is second. When it is desired to have a curved surface having a radius of curvature, it is easy to form using a photosensitive organic material. As the insulator 18, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used.
[0075]
FIG. 21 shows an example in which a protective film 70 made of a silicon nitride film is formed on the insulator 68 and the pattern of the insulator is different from the pattern of the silicon nitride film. For the sake of simplification, FIG. 21A shows a top view at the stage of forming up to the layer 60 containing an organic compound, and FIG. 21B shows a cross-sectional view cut along a solid line AA ′. A sectional view taken along the solid line BB ′ is shown in FIG. In the cross-sectional view illustrated in FIG. 21B, the insulator 68 is not present between the adjacent first electrodes 69. In FIG. 21A, the pattern shape of the insulator 68 is a stripe shape, and the pattern of the silicon nitride film which is the protective film 70 is a region indicated by a dotted line, and the end of the first electrode 69 It has a lattice shape that covers only the part. By forming the insulator 68 in a stripe shape, particles and impurities can be easily removed when the surface of the first electrode 69 is wet-cleaned (cleaned) rather than in a lattice shape. In FIG. 21, a region of the pixel portion 62 that is not covered with the protective film 70 is a light emitting region.
[0076]
Further, as the protective film 70, instead of the silicon nitride film, a silicon nitride oxide film or AlN _X O _Y You may use the film | membrane shown by these. AlN _X O _Y The film indicated by may be formed by introducing oxygen, nitrogen, or a rare gas from the gas introduction system by a sputtering method using a target made of AlN or Al. AlN _X O _Y In the layer represented by the above, it may be in a range containing several atm% or more, preferably 2.5 atm% to 47.5 atm%, and oxygen is 47.5 atm% or less, preferably 0.01 to less than 20 atm%. I just need it.
[0077]
By forming the protective film 70 on the insulator 68, the film thickness uniformity of the layer 60 containing an organic compound is improved, heat generation due to electric field concentration occurring at the time of light emission can be suppressed, and it is represented by shrink that reduces the light emitting region. It is possible to prevent deterioration of the light emitting element.
[0078]
Further, this embodiment mode can be freely combined with any one of Embodiment Modes 1 to 3.
[0079]
The present invention having the above-described configuration will be described in more detail with the following examples.
[0080]
(Example)
[Example 1]
In this embodiment, a structure in which light emitted from an EL element is emitted through an element substrate and enters an observer's eye is shown below. In this case, the observer can recognize the image from the element substrate side.
[0081]
First, a pixel structure in which three TFTs are arranged in one pixel will be described. An example of a detailed top view of the pixel is shown in FIG.
[0082]
6 includes an erasing transistor 606 for SES driving, a gate electrode and a second gate signal line 603 for inputting an erasing signal are connected, and a source electrode and a current supply line 604 are connected. The drain electrode is connected to the drain electrode of the switching TFT 605 and the gate electrode of the driving TFT 607.
[0083]
In the case of the three-transistor type, two TFTs, a switching TFT 605 and an erasing TFT 606, are arranged side by side and linearly between the first gate signal line 602 and the second gate signal line 603. The drain region of the switching TFT 605 and the drain region of the erasing TFT 606 may be overlapped. At this time, one point of the source region of the switching TFT 605, one point of the drain region, one point of the source region of the erasing TFT 606 and one point of the drain region are arranged on one straight line.
[0084]
By arranging as described above, the aperture ratio can be increased, and the opening can also be made a simple shape.
[0085]
FIG. 6B shows a cross section between α and α ′ in FIG. Like the driving TFT 607, the semiconductor layer 614 may meander in the vertical direction. By forming the semiconductor layer 614 in such a shape, the channel length L of the driving TFT 607 can be further increased without decreasing the aperture ratio. Note that in order to reduce the off-state current value, the driving TFT 607 may be a TFT having a plurality of channels. The channel length L of the driving TFT 607 is preferably 100 μm or more. When the channel length L is increased, the oxide film capacitance C _OX Therefore, a part of the capacity can be used as a storage capacity of the organic light emitting element. Conventionally, a space for forming a storage capacitor has been required to form a storage capacitor for each pixel, and a capacitor line, a capacitor electrode, and the like have been provided. Can be omitted. Also, the oxide film capacitance C _OX In the case of forming a storage capacitor, the storage capacitor is formed of a gate electrode using a gate insulating film as a dielectric, and a semiconductor that overlaps with the gate electrode through the gate insulating film. Therefore, even if the channel length of the TFT is increased, the semiconductor layer of the driving TFT 607 connected to the pixel electrode 608 is connected to the current supply line 604 and the source signal line 601 disposed above the gate electrode as shown in FIG. If it is arranged below, it is possible to design a pixel without reducing the aperture ratio. That is, with the pixel configuration shown in FIG. 6, a sufficient storage capacitor can be provided even if a space for forming a capacitor electrode and a capacitor wiring is omitted, and the aperture ratio can be further increased. Further, when the channel length L is increased, even if variations in TFT manufacturing processes such as laser light irradiation conditions occur, variations in electrical characteristics between the TFTs can be reduced.
[0086]
FIG. 8 illustrates an external view of the active matrix light-emitting device.
8A is a top view illustrating the light-emitting device, and FIG. 8B is a cross-sectional view taken along line AA ′ in FIG. 8A. Reference numeral 901 indicated by a dotted line denotes a source signal line driver circuit, 902 denotes a pixel portion, and 903 denotes a gate signal line driver circuit. Reference numeral 904 denotes a sealing substrate, reference numeral 905 denotes a sealant, and the inside surrounded by the sealant 905 is a space 907.
[0087]
Note that reference numeral 908 denotes wiring for transmitting signals input to the source signal line driver circuit 901 and the gate signal line driver circuit 903, and a video signal and a clock signal are received from an FPC (flexible printed circuit) 909 serving as an external input terminal. receive. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.
[0088]
Next, a cross-sectional structure is described with reference to FIG. A driver circuit and a pixel portion are formed over the substrate 910. Here, a source signal line driver circuit 901 and a pixel portion 902 are shown as the driver circuits.
[0089]
Note that as the source signal line driver circuit 901, a CMOS circuit in which an n-channel TFT 923 and a p-channel TFT 924 are combined is formed. The driving circuit may be formed of a known CMOS circuit, PMOS circuit, or NMOS circuit. In this embodiment mode, a driver integrated type in which a driver circuit is formed over a substrate is shown; however, this is not always necessary, and the driver circuit may be formed outside the substrate.
[0090]
The pixel portion 902 is formed by a plurality of pixels including a switching TFT 911, a current control TFT 912, and a first electrode (anode) 913 electrically connected to the drain thereof.
[0091]
An insulating layer 914 is formed on both ends of the first electrode (anode) 913, and a layer 915 containing an organic compound is formed on the first electrode (anode) 913. Further, a second electrode (cathode) 916 having the same pattern shape and matching end faces is formed on the layer 915 containing an organic compound. Thus, a light-emitting element 918 including the first electrode (anode) 913, the layer 915 containing an organic compound, and the second electrode (cathode) 916 is formed. Here, since the light-emitting element 918 emits white light, a color filter including a colored layer and BM (not shown here for simplification) is provided over the substrate 910.
[0092]
Here, the third electrode 917 described in Embodiment 4 is formed in order to electrically connect the second electrode 916 and the connection wiring 908. The third electrode 917 that is in contact with the second electrode 916 and the connection wiring 908 also functions as a wiring common to all pixels, and is electrically connected to the FPC 909 through the connection wiring 908.
[0093]
In addition, in order to seal the light emitting element 918 formed over the substrate 910, the sealing substrate 904 is attached with a sealant 905. Note that a spacer made of a resin film may be provided in order to secure a space between the sealing substrate 904 and the light-emitting element 918. A space 907 inside the sealing agent 905 is filled with an inert gas such as nitrogen. Note that an epoxy resin is preferably used as the sealant 905. In addition, the sealant 905 is desirably a material that does not transmit moisture and oxygen as much as possible. Furthermore, a substance having an effect of absorbing oxygen and water may be contained in the space 907.
[0094]
In this embodiment, a glass substrate or a quartz substrate, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar, polyester, acrylic, or the like is used as a material constituting the sealing substrate 904. be able to. In addition, after the sealing substrate 904 is bonded using the sealing agent 905, the sealing substrate 904 can be further sealed with a sealing agent so as to cover the side surface (exposed surface).
[0095]
By enclosing the light emitting element in the space 907 as described above, the light emitting element can be completely blocked from the outside, and a substance that promotes deterioration of the layer containing an organic compound such as moisture or oxygen can enter from the outside. Can be prevented. Therefore, a highly reliable light-emitting device can be obtained.
[0096]
An example of a manufacturing process of the above structure is shown in FIG.
[0097]
FIG. 7A is a cross-sectional view at a stage where a second electrode (a cathode made of Li—Al) is selectively formed by a vapor deposition mask after the formation of an organic compound film (lamination including PEDOT) by a coating method. is there. Note that, for the sake of simplification, a method for manufacturing an anode or a TFT made of a transparent conductive film is omitted here.
[0098]
Next, FIG. 7B is a cross-sectional view at the stage where the organic compound film (lamination including PEDOT) is etched by plasma in a self-aligning manner using the second electrode as a mask.
[0099]
Next, FIG. 7C is a cross-sectional view at the stage where a third electrode for connection with a connection wiring is selectively formed. Note that the second electrode and the third electrode may be made of the same material, or the third electrode may be made of a material having a lower electrical resistivity.
[0100]
In this embodiment, an example in which a white light emitting element and a color filter are combined (hereinafter referred to as a color filter method) is shown. A method for obtaining a full color display by forming a white light emitting element will be described below with reference to FIG.
[0101]
The color filter method is a method in which red light, green light, and blue light emission are obtained by forming a light emitting element having an organic compound film that emits white light and passing the obtained white light through a color filter.
[0102]
There are various methods for obtaining white light emission. Here, a case where a light emitting layer made of a polymer material that can be formed by coating is used will be described. In this case, the dye doping of the polymer material to be the light emitting layer can be performed by adjusting the solution, and can be obtained extremely easily as compared with the vapor deposition method in which co-evaporation in which a plurality of dyes are doped is performed.
[0103]
Specifically, poly (ethylenedioxythiophene) / poly (styrenesulfone) acting as a hole injection layer on an anode made of a metal having a high work function (Pt, Cr, W, Ni, Zn, Sn, In). An acid) aqueous solution (PEDOT / PSS) is applied to the entire surface and fired to form a film containing PEDOT, and then a luminescent center dye (1,1,4,4-tetraphenyl-1,3-butadiene acting as a luminescent layer) (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-styryl) -4H-pyran (DCM1), Nile Red, Coumarin 6 etc.) doped polyvinylcarbazole (PVK) solution is applied over the entire surface , After firing, a thin film containing a metal (Li, Mg, Cs) having a low work function, and a transparent conductive film (ITO (indium tin oxide alloy) laminated thereon), Indium oxide-zinc oxide alloy (In ₂ O _Three -ZnO), zinc oxide (ZnO), etc.) to form a cathode. PEDOT / PSS uses water as a solvent and does not dissolve in organic solvents. Therefore, when PVK is applied from above, there is no fear of redissolving. Further, since PEDOT / PSS and PVK have different solvents, it is preferable not to use the same film forming chamber.
[0104]
In the above example, an example in which a layer containing an organic compound is stacked as shown in FIG. 9B is shown, but a layer containing an organic compound can also be a single layer as shown in FIG. 9A. . For example, an electron transporting 1,3,4-oxadiazole derivative (PBD) may be dispersed in hole transporting polyvinyl carbazole (PVK). Further, white light emission can be obtained by dispersing 30 wt% PBD as an electron transporting agent and dispersing an appropriate amount of four kinds of dyes (TPB, coumarin 6, DCM1, Nile red).
[0105]
The organic compound film is formed between the anode and the cathode, and the holes injected from the anode and the electrons injected from the cathode are recombined in the organic compound film, so that the organic compound film emits white light. Is obtained.
[0106]
It is also possible to obtain white light emission as a whole by appropriately selecting an organic compound film emitting red light, an organic compound film emitting green light, or an organic compound film emitting blue light and mixing them in layers.
[0107]
The organic compound film formed as described above can obtain white light emission as a whole.
[0108]
A color provided with a colored layer (R) that absorbs light other than red light, a colored layer (G) that absorbs light other than green light, and a colored layer (B) that absorbs light other than blue light in the direction in which the organic compound film emits white light. By forming the filter, white light emission from the light emitting element can be separated and obtained as red light emission, green light emission, and blue light emission. In the case of the active matrix type, a TFT is formed between the substrate and the color filter.
[0109]
In addition, the colored layer (R, G, B) can use the simplest stripe pattern, diagonal mosaic arrangement, triangular mosaic arrangement, RGBG four-pixel arrangement, or RGBW four-pixel arrangement.
[0110]
An example of the relationship between the transmittance and wavelength of each colored layer using a white light source (D65) is shown in FIG. The colored layer constituting the color filter is formed using a color resist made of an organic photosensitive material in which a pigment is dispersed. FIG. 16 shows the color reproduction range when white light emission and a color filter are combined as chromaticity coordinates. The chromaticity coordinates of white light emission are (x, y) = (0.34, 0.35). FIG. 16 shows that the color reproducibility as a full color is sufficiently secured.
[0111]
In this case, even if the luminescent color obtained is different, all the organic compound films exhibiting white luminescence are formed, so that it is not necessary to separately form the organic compound film for each luminescent color. Further, a circularly polarizing plate that prevents specular reflection can be omitted.
[0112]
Next, a CCM method (color changing mediums) realized by combining a blue light emitting element having a blue light emitting organic compound film and a fluorescent color conversion layer will be described with reference to FIG.
[0113]
In the CCM method, blue light emitted from a blue light emitting element excites a fluorescent color conversion layer, and color conversion is performed in each color conversion layer. Specifically, the color conversion layer converts blue to red (B → R), the color conversion layer converts blue to green (B → G), and the color conversion layer converts blue to blue (B → B). ) (Note that the conversion from blue to blue is not necessary) to obtain red, green and blue light emission. Also in the case of the CCM method, the active matrix type has a structure in which TFTs are formed between the substrate and the color conversion layer.
[0114]
In this case, it is not necessary to form the organic compound film separately. Further, a circularly polarizing plate that prevents specular reflection can be omitted.
[0115]
Further, when the CCM method is used, since the color conversion layer is fluorescent, it is excited by external light and has a problem of lowering the contrast. Therefore, a color filter is attached as shown in FIG. To increase the contrast. FIG. 10C illustrates an example in which a white light emitting element is used, but a blue light emitting element may be used.
[0116]
Further, as shown in FIG. 9C, white light emission can be obtained by stacking a layer made of a high molecular material and a layer made of a low molecular material as a layer containing an organic compound. In the case of stacking white light emission, after forming a polymer material to be a hole injection layer by a coating method, co-evaporation is performed by a vapor deposition method, and a dye having a different emission color and emission color in the light emitting region is transported to the hole. What is necessary is just to dope in a layer and to mix with the luminescent color from a luminescent area | region. By appropriately adjusting the materials of the light emitting layer and the hole transport layer, white light emission as a whole can be obtained.
[0117]
In addition, the present invention in which a layer containing an organic compound made of a polymer material is etched in a self-aligned manner by plasma using an electrode as a mask is not limited to white light emission, and the colored material uses at least one polymer material as a layer containing an organic compound. It can also be applied to a light emitting element.
[0118]
FIG. 11 illustrates an example of a stacked structure of light-emitting elements.
[0119]
11A includes a layer 702a containing a first organic compound made of a high molecular weight material and a layer 702b containing a second organic compound made of a low molecular weight material on the anode 701. The stacked structure shown in FIG. A layer 702 containing a stacked organic compound, a cathode buffer layer 703, and a cathode 704 are formed. By appropriately setting the material and film thickness of these layers sandwiched between the cathode and the anode, red, green, and blue light-emitting elements can be obtained.
[0120]
When obtaining a red light emitting element, as shown in FIG. 11B, a polymer material PEDOT / PSS is applied onto the anode made of ITO by spin coating, and baked by vacuum baking to obtain a film thickness of 30 nm. To do. Next, 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (hereinafter referred to as α-NPD) is formed to a thickness of 60 nm by an evaporation method. Next, tris (8-quinolinolato) aluminum (hereinafter referred to as Alq) containing DCM as a dopant. _Three Is formed by a vapor deposition method. Then Alq _Three Is formed to a thickness of 40 nm. Then CaF ₂ After forming 1 nm in thickness by vapor deposition, Al is finally formed in a thickness of 200 nm by sputtering or vapor deposition to complete a red light emitting element.
[0121]
When obtaining a green light-emitting element, as shown in FIG. 11C, PEDOT / PSS, which is a polymer material, is applied onto the anode made of ITO by spin coating and baked by vacuum baking. 30 nm. Next, α-NPD is formed to a thickness of 60 nm by an evaporation method. Then, Alq containing DMQD as dopant _Three Is formed by co-evaporation to a film thickness of 40 nm. Then Alq _Three Is formed to a thickness of 40 nm. Then CaF ₂ After forming 1 nm in thickness by vapor deposition, finally, a green light emitting element is completed by forming Al in thickness 200 nm by sputtering or vapor deposition.
[0122]
When obtaining a blue light-emitting element, as shown in FIG. 11D, a polymer material PEDOT / PSS is applied onto the anode made of ITO by spin coating, and baked by vacuum baking. 30 nm. Next, α-NPD is formed to a thickness of 60 nm by an evaporation method. Next, bathocuproine (hereinafter referred to as BCP) is formed as a dopant to a thickness of 10 nm by an evaporation method. Then Alq _Three Is formed to a thickness of 40 nm. Then CaF ₂ After forming 1 nm in thickness by vapor deposition, finally, a blue light-emitting element is completed by forming Al in thickness 200 nm by sputtering or vapor deposition.
[0123]
When the colored light emitting elements (R, G, B) are formed, it is not necessary to provide a color filter, but it may be provided to increase color purity.
[0124]
In addition, this embodiment can be freely combined with any of Embodiment Modes 1 to 4.
[0125]
[Example 2]
In this embodiment, FIG. 12 shows an example of a multi-chamber manufacturing apparatus that fully automates the manufacturing from the formation of light emitting elements to sealing.
[0126]
In FIG. 12, 100a to 100k and 100m to 100w are gates, 101 is a preparation chamber, 119 is an extraction chamber, 102, 104a, 108, 114 and 118 are transfer chambers, 105, 107 and 111 are delivery chambers, 106R and 106B, 106G, 106H, 106E, 109, 110, 112, 113 are film forming chambers, 103 is a pretreatment chamber, 117 is a sealing substrate loading chamber, 115 is a dispenser chamber, 116 is a sealing chamber, 120a and 120b are cassette chambers, 121 is a tray mounting stage, 122 is an etching chamber by plasma.
[0127]
First, a plurality of TFTs, a transparent conductive film (ITO (indium oxide tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O _Three Poly (ethylenedioxythiophene) acting as a hole injection layer on a substrate provided with an anode (first electrode) made of ZnO), zinc oxide (ZnO), etc., and an insulator covering the end of the anode ) / Poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) is formed on the entire surface, and heat treatment in vacuum is performed to vaporize moisture. If it is necessary to clean or polish the surface of the anode, it may be performed before forming the organic compound layer containing PEDOT.
[0128]
Hereinafter, a substrate provided with a TFT, an anode, an insulator covering the end of the anode, and a hole injection layer (PEDOT) in advance is carried into the manufacturing apparatus shown in FIG. 12, and the laminated structure shown in FIG. The procedure to form is shown.
[0129]
First, the substrate is set in the cassette chamber 120a or the cassette chamber 120b. When the substrate is a large substrate (for example, 300 mm × 360 mm), it is set in the cassette chamber 120b, and when it is a normal substrate (for example, 127 mm × 127 mm), it is transferred to the tray mounting stage 121 and the tray (for example, 300 mm) Several boards are mounted on (360 mm).
[0130]
Next, the substrate is transferred from the cassette chamber 120b to the transfer chamber 118 provided with the substrate transfer mechanism. Next, the film is transferred to the film formation chamber 112, and an organic compound layer made of a polymer serving as a light emitting layer is formed on the entire surface over a hole injection layer (PEDOT) provided on the entire surface. The film formation chamber 112 is a film formation chamber for forming an organic compound layer made of a polymer. In this example, dyes (1,1,4,4-tetraphenyl-1,3-butadiene (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-styryl) acting as a light emitting layer are used. ) Shown is an example in which a polyvinylcarbazole (PVK) solution doped with −4H-pyran (DCM1), Nile red, coumarin 6 and the like is formed on the entire surface. Set the surface of the substrate facing upward at atmospheric pressure, and after film formation using water or an organic solvent as a solvent, heat treatment is performed in a vacuum to vaporize moisture. It is preferable that an annealing chamber capable of vacuum heating connected to the film formation chamber 112 be provided.
[0131]
Next, the substrate is transferred from the transfer chamber 118 provided with the substrate transfer mechanism to the preparation chamber 101.
[0132]
The charging chamber 101 is connected to a vacuum evacuation treatment chamber, and after evacuating, it is preferable to introduce an inert gas to an atmospheric pressure. Next, the material is transferred to a transfer chamber 102 connected to the preparation chamber 101. In advance, the vacuum is maintained by evacuation so that moisture and oxygen do not exist in the transfer chamber as much as possible.
[0133]
Further, the transfer chamber 102 is connected to an evacuation processing chamber that evacuates the transfer chamber. As the vacuum evacuation processing chamber, a magnetic levitation type turbo molecular pump, a cryopump, or a dry pump is provided. As a result, the ultimate vacuum in the transfer chamber is reduced to 10 ^-Five -10 ^-6 Pa can be set, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as the introduced gas. These gases introduced into the apparatus are those purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the film forming apparatus after being highly purified. Thereby, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.
[0134]
In addition, after film formation using water or an organic solvent as a solvent, it is preferable that the film is transferred to the pretreatment chamber 103 where heat treatment is performed in a high vacuum to further vaporize moisture.
[0135]
In this embodiment, an example in which an organic compound layer made of a polymer material is laminated is shown. However, when a laminated structure with a layer made of a low molecular material shown in FIG. 9C or FIG. Film formation may be performed in the film formation chambers 106R, 106G, and 106B by an evaporation method, and a layer containing an organic compound that emits white light, red light, green light, or blue light may be appropriately formed as the entire light-emitting element. The delivery chamber 105 is provided with a substrate reversing mechanism, and the substrate is reversed appropriately.
[0136]
If necessary, an electron transport layer or an electron injection layer may be formed in the film formation chamber 106E, and a hole injection layer or a hole transport layer may be formed in the 106H. When using a vapor deposition method, for example, the degree of vacuum is 5 × 10 ^-3 Torr (0.665 Pa) or less, preferably 10 ^-Four -10 ^-6 Vapor deposition is performed in a deposition chamber evacuated to Pa. At the time of vapor deposition, the organic compound is vaporized in advance by resistance heating, and is scattered in the direction of the substrate by opening a shutter (not shown) at the time of vapor deposition. The vaporized organic compound is scattered upward and deposited on the substrate through an opening (not shown) provided in a metal mask (not shown). Note that the temperature of the substrate (T ₁ ) Is 50 to 200 ° C, preferably 65 to 150 ° C. In the case of using a vapor deposition method, it is preferable to set a crucible in which a vapor deposition material is stored in advance by a material manufacturer in the film formation chamber. The setting is preferably performed without exposure to the atmosphere. When the material is transferred from the material manufacturer, the crucible is preferably introduced into the film formation chamber while being sealed in the second container. Desirably, a chamber having a vacuum evacuation unit is provided connected to the film formation chamber 106R, where the crucible is taken out from the second container in a vacuum or an inert gas atmosphere, and the crucible is installed in the film formation chamber. By doing so, the crucible and the EL material housed in the crucible can be prevented from contamination.
[0137]
Next, the substrate is transferred from the transfer chamber 102 to the delivery chamber 105, from the delivery chamber 105 to the transfer chamber 104 a, and from the transfer chamber 104 a to the delivery chamber 107 without being exposed to the atmosphere, and further without being exposed to the atmosphere. Then, the substrate is transferred from the delivery chamber 107 to the transfer chamber 108.
[0138]
Next, the film is transferred to the film forming chamber 110 by a transfer mechanism installed in the transfer chamber 108, and a metal film (MgAg, MgIn, AlLi, CaF) is transferred. ₂ , A cathode (second electrode) made of an alloy such as CaN, or a film formed by co-evaporation with an element belonging to Group 1 or 2 of the periodic table and aluminum is formed by vapor deposition using resistance heating. . In the case of vapor deposition, it selectively forms using a vapor deposition mask.
[0139]
Next, the film is transferred to the plasma processing chamber 122 by a transfer mechanism installed in the transfer chamber 108, and the stack of organic compound films made of a polymer material is removed in a self-aligned manner using the second electrode as a mask. The plasma processing chamber 122 has a plasma generating means, and performs dry etching by generating one or a plurality of gases selected from Ar, H, F, or O to generate plasma. If etching is performed by oxygen plasma treatment, the pretreatment chamber 103 can also be used.
[0140]
Next, the film is again transferred to the film formation chamber 110, and a metal film (an alloy such as MgAg, MgIn, AlLi, or CaN, or a film formed by co-evaporation with an element belonging to Group 1 or 2 of the periodic table and aluminum). A third electrode (which can also be said to be the upper layer of the cathode) is formed by a vapor deposition method using resistance heating. Here, the second electrode and the connection wiring are electrically connected by forming a third electrode using a mask different from the vapor deposition mask of the metal film previously deposited. In this embodiment, an example in which the second electrode and the third electrode are formed in the same film formation chamber 110 has been described. However, since the mask needs to be replaced, the efficiency is lowered. Therefore, it is preferable to provide separate film formation chambers in order to improve tasks. Note that in this embodiment, an example in which the third electrode is selectively formed using an evaporation mask is shown, but after forming a metal film by a sputtering method, patterning may be performed by etching using a photoresist. .
[0141]
Through the above steps, the light-emitting element having the stacked structure illustrated in FIG. 9B is formed.
[0142]
Next, the film is transferred from the transfer chamber 108 to the deposition chamber 113 without being exposed to the air, and a protective film formed of a silicon nitride film or a silicon nitride oxide film is formed. Here, a sputtering apparatus provided with a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride in the film formation chamber 113 is used. For example, a silicon nitride film can be formed by using a target made of silicon and setting a film formation chamber atmosphere to a nitrogen atmosphere or an atmosphere containing nitrogen and argon.
[0143]
Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 108 to the delivery chamber 111 without being exposed to the atmosphere, and further transferred from the delivery chamber 111 to the transfer chamber 114.
[0144]
Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 114 to the sealing chamber 116. Note that a sealing substrate provided with a sealant is preferably prepared in the sealing chamber 116.
[0145]
The sealing substrate is set in the sealing substrate load chamber 117 from the outside. In order to remove impurities such as moisture, it is preferable to perform annealing in a vacuum in advance, for example, annealing in the sealing substrate load chamber 117. When a sealing material is formed on the sealing substrate, the transfer chamber 114 is set to atmospheric pressure, and then the sealing substrate is transferred from the sealing substrate load chamber to the dispenser chamber 115 to provide a light emitting element. And a sealing substrate on which the sealing material is formed is transported to the sealing chamber 116.
[0146]
Next, in order to deaerate the substrate provided with the light-emitting element, after annealing in a vacuum or an inert atmosphere, the sealing substrate provided with the sealant and the substrate on which the light-emitting element is formed are attached to each other . The sealed space is filled with hydrogen or an inert gas. Note that here, an example in which the sealing material is formed over the sealing substrate is described; however, there is no particular limitation, and the sealing material may be formed over the substrate over which the light-emitting element is formed.
[0147]
Next, the pair of bonded substrates is irradiated with UV light by an ultraviolet irradiation mechanism provided in the sealing chamber 116 to cure the sealing material. In addition, although ultraviolet curable resin was used here as a sealing material, if it is an adhesive material, it will not specifically limit.
[0148]
Next, the pair of bonded substrates is transferred from the sealing chamber 116 to the transfer chamber 114 and then transferred from the transfer chamber 114 to the take-out chamber 119 and taken out.
[0149]
As described above, by using the manufacturing apparatus illustrated in FIGS. 12A and 12B, since it is not necessary to expose the light emitting element to the air until the light emitting element is completely enclosed in the sealed space, a highly reliable light emitting apparatus can be manufactured. Note that in the transfer chamber 114, vacuum and a nitrogen atmosphere at atmospheric pressure are repeated, but it is desirable that the transfer chambers 102, 104a, and 108 are always kept in vacuum.
[0150]
Note that an in-line film deposition apparatus can also be used.
[0151]
In addition, it is carried into the manufacturing apparatus shown in FIG. 12, and a metal film (metal having a high work function (Pt, Cr, W, Ni, Zn, Sn, In, etc.)) is used as an anode. A procedure for forming a light emitting element in the reverse direction is described below.
[0152]
First, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / activator) acting as a hole injection layer on a substrate on which a plurality of TFTs, an anode, and an insulator covering the end of the anode are provided in advance. PSS) is formed on the entire surface, and heat treatment is performed in vacuum to evaporate moisture.
[0153]
Next, a substrate provided with a TFT and an anode is set in the cassette chamber 120a or the cassette chamber 120b.
[0154]
Next, the substrate is transferred from the cassette chamber to a transfer chamber 118 provided with a substrate transfer mechanism.
[0155]
Next, the film is transferred to the film formation chamber 112, and an organic compound layer made of a polymer serving as a light emitting layer is formed on the entire surface over a hole injection layer (PEDOT) provided on the entire surface. The film formation chamber 112 is a film formation chamber for forming an organic compound layer made of a polymer. In this example, dyes (1,1,4,4-tetraphenyl-1,3-butadiene (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-styryl) acting as a light emitting layer are used. ) -4H-pyran (DCM1), Nile Red, Coumarin 6 etc.) An example of forming a doped polyvinylcarbazole (PVK) solution over the entire surface is shown. In the case where an organic compound layer is formed by spin coating in the film formation chamber 112, the film formation surface of the substrate is set to face upward under atmospheric pressure.
[0156]
Next, the substrate is transferred from the transfer chamber 118 provided with the substrate transfer mechanism to the preparation chamber 101.
Next, the material is transferred to a transfer chamber 102 connected to the preparation chamber 101. Note that after film formation using water or an organic solvent as a solvent is performed, the film is preferably transferred to the pretreatment chamber 103 where heat treatment is performed in vacuum to vaporize moisture.
[0157]
Next, the substrate is transferred from the transfer chamber 102 to the delivery chamber 105, from the delivery chamber 105 to the transfer chamber 104 a, and from the transfer chamber 104 a to the delivery chamber 107 without being exposed to the atmosphere, and further without being exposed to the atmosphere. Then, the substrate is transferred from the delivery chamber 107 to the transfer chamber 108.
[0158]
Next, the film is transferred to the film forming chamber 110 by a transfer mechanism installed in the transfer chamber 108, and is formed into a very thin metal film (an alloy such as MgAg, MgIn, AlLi, CaN, or the first or second group of the periodic table). A cathode (lower layer) made of a film formed by co-evaporation with an element belonging to aluminum is formed by vapor deposition using resistance heating. After forming a cathode (lower layer) made of a thin metal layer, it is transported to the film formation chamber 109 and is made of a transparent conductive film (ITO (indium tin oxide alloy), indium zinc oxide alloy (In ₂ O _Three -ZnO), zinc oxide (ZnO), etc.) are formed, and a cathode (second electrode) made of a laminate of a thin metal layer and a transparent conductive film is appropriately formed using a metal mask or the like. .
[0159]
Next, the film is transferred to the plasma processing chamber 122 by a transfer mechanism installed in the transfer chamber 108, and the stack of organic compound films made of a polymer material is removed in a self-aligned manner using the second electrode as a mask. The plasma processing chamber 122 has a plasma generating means, and performs dry etching by generating one or a plurality of gases selected from Ar, H, F, or O to generate plasma. If etching is performed by oxygen plasma treatment, the pretreatment chamber 103 can also be used.
[0160]
Next, the film is transferred again to the film formation chamber 109, and a third electrode (also referred to as an upper layer of the cathode) made of a transparent conductive film is formed by a sputtering method. Note that here, the metal mask is changed to a pattern different from the previously formed second electrode pattern, and the third electrode is formed, whereby the second electrode and the connection wiring are electrically connected. Note that although the example in which the third electrode is selectively formed using a mask is described in this embodiment, patterning in which etching is performed using a photoresist may be performed.
[0161]
Through the above steps, a light-emitting element that extracts light through the second electrode is formed.
[0162]
Further, the subsequent steps are the same as the manufacturing procedure of the light-emitting device having the stacked structure shown in FIG.
[0163]
Note that in this example, although the example using the method described in Embodiment 4 in which the second electrode and the connection wiring are electrically connected by forming the third electrode is shown, the present invention is particularly limited. Instead, the second electrode and the connection wiring may be electrically connected by the method described in any one of Embodiments 1 to 3.
[0164]
Further, this embodiment can be freely combined with Embodiment 1.
[0165]
[Example 3]
By implementing the present invention, all electronic devices incorporating a module having an organic light emitting element (active matrix EL module) are completed.
[0166]
Such electronic devices include video cameras, digital cameras, head mounted displays (goggles type displays), car navigation systems, projectors, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.), etc. Can be mentioned. Examples of these are shown in FIGS.
[0167]
FIG. 13A illustrates a personal computer, which includes a main body 2001, an image input portion 2002, a display portion 2003, a keyboard 2004, and the like.
[0168]
FIG. 13B illustrates a video camera, which includes a main body 2101, a display portion 2102, an audio input portion 2103, operation switches 2104, a battery 2105, an image receiving portion 2106, and the like.
[0169]
FIG. 13C illustrates a mobile computer, which includes a main body 2201, a camera unit 2202, an image receiving unit 2203, operation switches 2204, a display unit 2205, and the like.
[0170]
FIG. 13D shows a goggle type display, which includes a main body 2301, a display portion 2302, an arm portion 2303, and the like.
[0171]
FIG. 13E shows a player using a recording medium (hereinafter referred to as a recording medium) on which a program is recorded, and includes a main body 2401, a display portion 2402, a speaker portion 2403, a recording medium 2404, operation switches 2405, and the like. This player uses a DVD (Digital Versatile Disc), CD, or the like as a recording medium, and can perform music appreciation, movie appreciation, games, and the Internet.
[0172]
FIG. 13F illustrates a digital camera, which includes a main body 2501, a display portion 2502, an eyepiece portion 2503, an operation switch 2504, an image receiving portion (not shown), and the like.
[0173]
FIG. 14A shows a mobile phone, which includes a main body 2901, an audio output portion 2902, an audio input portion 2903, a display portion 2904, operation switches 2905, an antenna 2906, an image input portion (CCD, image sensor, etc.) 2907, and the like.
[0174]
FIG. 14B illustrates a portable book (electronic book), which includes a main body 3001, display portions 3002 and 3003, a storage medium 3004, an operation switch 3005, an antenna 3006, and the like.
[0175]
FIG. 14C illustrates a display, which includes a main body 3101, a support base 3102, a display portion 3103, and the like.
[0176]
Incidentally, the display shown in FIG. 14C is a medium or small size display, for example, a screen size of 5 to 20 inches. Further, in order to form a display portion having such a size, it is preferable to use a substrate having a side of 1 m and perform mass production by performing multiple chamfering.
[0177]
As described above, the applicable range of the present invention is so wide that the present invention can be applied to methods for manufacturing electronic devices in various fields. In addition, the electronic device of this example can be realized by using any combination of Embodiment Modes 1 to 4, Example 1, and Example 2.
[0178]
[Example 4]
In the fourth embodiment, the example of the insulator having the first and second curvature radii is shown. However, in this example, an example having the curvature radius only at the upper end portion of the insulator is shown in FIG.
[0179]
In this example, the structure other than the insulator is the same as that of Embodiment 4, but is not particularly limited. Instead of the insulator shown in Embodiments 1 to 3, the insulator shown in this example is used. Can be applied.
[0180]
In FIG. 19, 80 is a layer containing an organic compound, 81 is a second electrode, 87 is a connection wiring, 88 is an insulator, 89 is a first electrode, 91 is a third electrode, and 93 is a light emitting element. As the insulator 88, it is preferable to use a negative organic material that becomes insoluble in an etchant by light, or a positive organic material that becomes soluble in an etchant by light.
[0181]
In this embodiment, the insulator 88 is formed using a positive photoresist. An insulator 88 shown in FIG. 19A is formed by adjusting exposure conditions, etchant conditions, and the like. The insulator 88 has a curvature radius of 0.2 μm to 3 μm only at the upper end. The insulator 88 can improve the coverage of the layer 80 containing an organic compound and the second electrode 81 made of a metal film, and can reduce defects called shrink, in which a light emitting region is reduced. Note that FIG. 20 is a photograph in which the same shape as that of the insulator 88 illustrated in FIG. 19A is formed using a positive acrylic resin over a glass substrate and the cross section is observed. The taper angle on the side surface of the insulator 88 may be 45 ° ± 10 °.
[0182]
FIG. 19B shows an example in which the upper layer 98b made of a photoresist which is a photosensitive organic material and the lower layer 98a made of an acrylic which is a non-photosensitive organic material are stacked as an insulator. In the upper layer 98b of the insulator, only the upper end has a curvature radius of 0.2 μm to 3 μm. As the lower layer 98a, an inorganic material (such as silicon oxide, silicon nitride, or silicon oxynitride) can be used instead of the non-photosensitive material.
[0183]
FIG. 19C shows an example in which a silicon nitride film 94 is formed over the insulator 88 by RF sputtering. Instead of the silicon nitride film 94, a silicon nitride oxide film or AlN _X O _Y You may use the film | membrane shown by these. AlN _X O _Y The film indicated by may be formed by introducing oxygen, nitrogen, or a rare gas from the gas introduction system by a sputtering method using a target made of AlN or Al. AlN _X O _Y In the layer represented by the above, it may be in a range containing several atm% or more, preferably 2.5 atm% to 47.5 atm%, and oxygen is 47.5 atm% or less, preferably 0.01 to less than 20 atm%. I just need it. By forming a protective film such as a silicon nitride film on the insulator 88, defects called shrink, in which a light emitting region is reduced, can be reduced.
[0184]
In addition, any combination of Embodiments 1 to 4 and Examples 1 to 3 can be used in this embodiment.
[0185]
【The invention's effect】
According to the present invention, it is possible to easily form a structure in which a layer containing an organic compound is not formed in a connection portion of a wiring connected to an external power source by enabling selective formation of a polymer material layer. it can.
[0186]
In addition, according to the present invention, by providing a color filter, a circularly polarizing plate is not required and the cost is reduced. Further, since it is not necessary to separate the coating, an improvement in throughput and high definition can be realized.
[Brief description of the drawings]
1A and 1B are a cross-sectional view and a top view. (Embodiment 1)
2A and 2B are a cross-sectional view and a top view. (Embodiment 2)
FIGS. 3A and 3B are a cross-sectional view and a top view. FIGS. (Embodiment 3)
FIG. 4 shows an etching process. (Embodiment 4)
FIGS. 5A and 5B are a cross-sectional view and a top view. FIGS. (Embodiment 4)
FIG. 6 is a diagram showing a top view of a pixel. Example 1
FIG. 7 is a diagram showing a process diagram. Example 1
FIGS. 8A and 8B are a cross-sectional view and a top view of an active display device. FIGS. (Example 1)
FIG. 9 is a diagram showing a laminated structure of a light emitting element. Example 1
FIG. 10 is a schematic diagram in the case of full color using white light emission. Example 1
FIG. 11 is a schematic diagram in the case of full color formation by stacking a high molecular material and a low molecular material. Example 1
FIG. 12 is a diagram showing a manufacturing apparatus. (Example 2)
FIG 13 illustrates an example of an electronic device. (Example 3)
FIG 14 illustrates an example of an electronic device. (Example 3)
FIG. 15 is a graph showing the transmittance of a colored layer. Example 1
FIG. 16 is a diagram showing chromaticity coordinates. Example 1
FIG. 17 is a photograph showing a cross section around an insulator. (Embodiment 4)
FIG. 18 is a photograph showing a cross section around an insulator. (Comparative example)
FIG 19 is a cross-sectional view. Example 4
FIG. 20 is a photograph showing a cross section around an insulator.
FIG. 21 shows a cross-sectional view and a top view. (Embodiment 4)
FIG. 22 is a cross-sectional view. (Embodiment 1)

Claims (4)

Forming a first electrode and a connection wiring on the substrate;
Forming an insulator made of an organic material so as to cover an end of the first electrode and an end of the connection wiring;
Silicon nitride, silicon nitride oxide, or AlN so as to cover the insulator _X O _Y Forming a protective film consisting of
A film containing an organic compound is formed on the first electrode and the protective film by a coating method,
A second electrode is formed on the film containing the organic compound by a vapor deposition method using a vapor deposition mask,
Etching with plasma using the second electrode as a mask to self-align the film containing the organic compound to form a layer containing the organic compound,
The second electrode has a lower electrical resistivity than the second electrode so as to cover the upper surface and the side surface of the second electrode and the side surface of the layer containing the organic compound and to overlap a part of the connection wiring. By forming the third electrode, the second electrode and the connection wiring are electrically connected through the third electrode,
The method for manufacturing a light-emitting device, wherein the insulator has a curved surface having a first radius of curvature at an upper end and a curved surface having a second radius of curvature at a lower end. Forming a first electrode and a connection wiring on the substrate;
Forming an insulator made of an organic material so as to cover an end of the first electrode and an end of the connection wiring;
Silicon nitride, silicon nitride oxide, or AlN so as to cover the insulator _X O _Y Forming a protective film consisting of
A film containing an organic compound is formed on the first electrode and the protective film by a coating method,
A second electrode is formed on the film containing the organic compound by a vapor deposition method using a vapor deposition mask,
Etching with plasma using the second electrode as a mask to self-align the film containing the organic compound to form a layer containing the organic compound,
The second electrode has a lower electrical resistivity than the second electrode so as to cover the upper surface and the side surface of the second electrode and the side surface of the layer containing the organic compound and to overlap a part of the connection wiring. By forming the third electrode, the second electrode and the connection wiring are electrically connected through the third electrode,
The method for manufacturing a light-emitting device, wherein the insulator has a curved surface having a curvature radius only at an upper end portion. 3. The method for manufacturing a light-emitting device according to claim 1, wherein the plasma is generated by exciting one or more kinds of gases selected from Ar, H, and F. 4. In any one of claims 1 to 3, wherein the second electrode and each of the third electrodes, the method for manufacturing a light emitting device which is characterized in that functions as a wiring common to all pixels.

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