JPH06223971A - Manufacture of thin film el element - Google Patents
Manufacture of thin film el elementInfo
- Publication number
- JPH06223971A JPH06223971A JP5032621A JP3262193A JPH06223971A JP H06223971 A JPH06223971 A JP H06223971A JP 5032621 A JP5032621 A JP 5032621A JP 3262193 A JP3262193 A JP 3262193A JP H06223971 A JPH06223971 A JP H06223971A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- auxiliary electrode
- transparent electrode
- auxiliary
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、フラットパネルディス
プレイとして優れた性能を持つ薄膜ＥＬ素子の製造方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film EL device having excellent performance as a flat panel display.
【０００２】[0002]
【従来の技術】一般に薄膜ＥＬ素子は、透明なガラス基
板上に透明電極としてＩＴＯを形成し、その上に第１の
絶縁層、発光層、第２の絶縁層を順次積層した後、背面
電極を形成したものが用いられている。前記薄膜ＥＬ素
子に使用される透明電極はシート抵抗が高いため、大面
積、高精細なパネルを作ると、電圧降下が激しく、輝度
むらを生じてしまうという欠点がある。そのため、補助
電極として金属の細線を透明電極に接して設けることが
提案されている。2. Description of the Related Art Generally, in a thin film EL device, ITO is formed as a transparent electrode on a transparent glass substrate, and a first insulating layer, a light emitting layer and a second insulating layer are sequentially laminated on the ITO, and then a back electrode is formed. What is formed is used. Since the transparent electrode used for the thin film EL element has a high sheet resistance, when a large-area and high-definition panel is manufactured, there is a drawback that a voltage drop is severe and uneven brightness occurs. Therefore, it has been proposed to provide a thin metal wire as an auxiliary electrode in contact with the transparent electrode.
【０００３】[0003]
【発明が解決しようとする課題】上記のように補助電極
を透明電極に接して設ける場合、図７に示すように透明
電極の形成すなわちＩＴＯの蒸着、パターニングの後に
補助電極の蒸着、パターニングをする工程順序であるの
で、真空成膜工程とリソグラフ工程とが交互に配置され
ることになり、工程が煩雑になる。本発明は上記従来の
問題点に着目してなされたもので、補助電極の形成によ
って生じる製造工程の煩雑さを解消することができるよ
うな、簡略化した薄膜ＥＬ素子の製造方法を提供するこ
とを目的としている。When the auxiliary electrode is provided in contact with the transparent electrode as described above, the transparent electrode is formed, that is, ITO is vapor-deposited and patterned, and then the auxiliary electrode is vapor-deposited and patterned as shown in FIG. Since the process order is adopted, the vacuum film forming process and the lithographic process are alternately arranged, which complicates the process. The present invention has been made in view of the above conventional problems, and provides a simplified method for manufacturing a thin film EL element capable of eliminating the complexity of the manufacturing process caused by the formation of the auxiliary electrode. It is an object.
【０００４】[0004]
【課題を解決するための手段】上記目的を達成するた
め、本発明に係る薄膜ＥＬ素子の製造方法は、絶縁耐熱
性基板上に第１の電極、第１の絶縁層、発光層、第２の
絶縁層、第２の電極を順次積層し、少なくとも一方の電
極に補助電極を設けてなる薄膜ＥＬ素子の製造方法であ
って、電極および補助電極を形成する手段として、 （１）電極をほぼ全面に成膜する （２）前記電極の上に補助電極となる薄膜を成膜する （３）補助電極をパターニングするレジストを形成する （４）補助電極膜のみをエッチングする （５）レジストを除去し、電極をパターニングするレジ
ストを形成する （６）電極をエッチングする （７）レジストを除去する 工程を順次行うものとした。In order to achieve the above object, a method of manufacturing a thin film EL element according to the present invention comprises a first electrode, a first insulating layer, a light emitting layer and a second electrode on an insulating and heat resistant substrate. In the method for manufacturing a thin film EL element, the insulating layer and the second electrode are sequentially laminated, and an auxiliary electrode is provided on at least one of the electrodes. As means for forming the electrode and the auxiliary electrode, Film formation on the entire surface (2) Film formation of a thin film to be an auxiliary electrode on the electrode (3) Formation of resist for patterning the auxiliary electrode (4) Etching of auxiliary electrode film only (5) Removal of resist Then, a resist for patterning the electrode is formed (6) The electrode is etched (7) The resist is removed.
【０００５】[0005]
【作用】上記構成によれば、透明電極と補助電極との形
成において、成膜工程とパターニング工程とを分離し、
図６に示すように真空槽内で透明電極を成膜した後、真
空を維持したまま引き続き補助電極を成膜することにし
た。透明電極の成膜後リソグラフを行わないので、透明
電極表面にはレジスト残渣や薬品などの汚染物が残るこ
とはなく、電極表面が清浄なまま次の補助電極成膜を行
うことができる。従って、透明電極と補助電極の密着性
も向上する。また、真空を維持したまま続けて成膜する
ため、図７に示す従来の電極形成工程において２回ずつ
行っていた真空引きと大気に戻す作業を１回ずつ減らす
ことができる。透明電極の成膜後、補助電極の成膜のた
め基板を搬送する工程が新たに加わるが、真空引きおよ
び大気に戻す作業工程に比べると基板搬送工程は非常に
短い時間で済む。このため、電極および補助電極の形成
所要時間を大幅に短縮することができる。According to the above structure, in forming the transparent electrode and the auxiliary electrode, the film forming step and the patterning step are separated,
As shown in FIG. 6, after forming the transparent electrode in the vacuum chamber, the auxiliary electrode was continuously formed while maintaining the vacuum. Since the lithographic process is not performed after the transparent electrode is formed, contaminants such as resist residues and chemicals do not remain on the transparent electrode surface, and the next auxiliary electrode film formation can be performed while the electrode surface is clean. Therefore, the adhesion between the transparent electrode and the auxiliary electrode is also improved. Further, since the film is continuously formed while maintaining the vacuum, the work of evacuating and returning to the atmosphere, which has been performed twice in the conventional electrode forming process shown in FIG. 7, can be reduced once. After forming the transparent electrode, a step of transferring the substrate for forming the auxiliary electrode is newly added, but the substrate transferring step can be performed in a very short time as compared with the work steps of vacuuming and returning to the atmosphere. Therefore, the time required to form the electrodes and the auxiliary electrodes can be significantly shortened.
【０００６】[0006]
【実施例】以下に本発明に係る薄膜ＥＬ素子の製造方法
の実施例について、図面を参照して説明する。図１は第
１実施例における電極形成工程を順に説明したものであ
る。同図において（ａ）は一般的な薄膜ＥＬ素子の製造
工程により、絶縁耐熱性ガラス基板１上に第１電極（Ｉ
ＴＯ）２、第１絶縁層３、発光層４、第２絶縁層５まで
積層した状態を示している。これに第２電極６としてＩ
ＴＯをスパッタ法で成膜する（ｂ）。続いて補助電極７
としてＡｌをスパッタ法で成膜する（ｃ）。前記第２電
極６および補助電極７を成膜する際、ターゲット間の距
離がある程度確保されていれば、スパッタ室を別々に設
けなくても膜中にそれぞれが混ざることはない。従って
ワーク搬送時間が短くて済む。次に補助電極７のパター
ニングであるが、図１の（ｄ）、（ｅ）に示すように補
助電極７上にレジスト８をパターニングし、補助電極７
のエッチングを行う。本実施例では、エッチング液とし
てリン酸、硝酸、酢酸、水の割合を１６：１：２：１と
した混酸を用いた。レジストを除去（ｆ）した後、第２
電極６をパターニングする（ｇ〜ｉ）。このときのエッ
チング液にはＨＢｒを用いた。以上のような工程で製造
した薄膜ＥＬパネルは、透明電極と補助電極との密着性
が良く、製造時間も大幅に短縮することができた。EXAMPLES Examples of a method for manufacturing a thin film EL element according to the present invention will be described below with reference to the drawings. FIG. 1 illustrates the electrode forming process in the first embodiment in order. In the figure, (a) shows the first electrode (I) on the insulating and heat-resistant glass substrate 1 by the manufacturing process of a general thin film EL element.
(TO) 2, the first insulating layer 3, the light emitting layer 4, and the second insulating layer 5 are stacked. As the second electrode 6, I
A film of TO is formed by the sputtering method (b). Then the auxiliary electrode 7
As a film, Al is formed by the sputtering method (c). When the second electrode 6 and the auxiliary electrode 7 are formed, if the distance between the targets is secured to some extent, they will not be mixed in the film without separately providing sputtering chambers. Therefore, the work transfer time can be shortened. Next, regarding the patterning of the auxiliary electrode 7, the resist 8 is patterned on the auxiliary electrode 7 as shown in (d) and (e) of FIG.
Etching is performed. In this example, a mixed acid having a ratio of phosphoric acid, nitric acid, acetic acid, and water of 16: 1: 2: 1 was used as the etching solution. After removing (f) the resist, the second
The electrode 6 is patterned (gi). HBr was used as the etching liquid at this time. The thin-film EL panel manufactured through the above-described steps had good adhesion between the transparent electrode and the auxiliary electrode, and the manufacturing time could be greatly shortened.
【０００７】図２は第２実施例における電極形成工程を
順に説明したものである。まず、ガラス基板１上に第１
電極（ＩＴＯ）２をほぼ全面に蒸着（ａ）し、その上に
（ｂ）に示すように、補助電極７をほぼ全面に蒸着する
（ｂ）。次にレジスト８をパターニングし（ｃ）、補助
電極７をエッチングする（ｄ）。最初のレジストを除去
した（ｅ）後、第１電極２をパターニングし（ｆ，
ｇ）、更にレジストを除去する（ｈ）。それから第１絶
縁層３、発光層４、第２絶縁層５、第２電極（ＩＴＯ）
６の順に成膜し（ｉ〜ｌ）、第２電極６をパターニング
して薄膜ＥＬ素子が完成する。FIG. 2 illustrates the electrode forming process in the second embodiment in order. First, the first on the glass substrate 1
The electrode (ITO) 2 is vapor-deposited (a) on almost the entire surface, and the auxiliary electrode 7 is vapor-deposited on the almost entire surface (b) as shown in (b). Next, the resist 8 is patterned (c), and the auxiliary electrode 7 is etched (d). After removing the first resist (e), the first electrode 2 is patterned (f,
g) Then, the resist is removed (h). Then, the first insulating layer 3, the light emitting layer 4, the second insulating layer 5, the second electrode (ITO)
Film formation is performed in the order of 6 (i to l), and the second electrode 6 is patterned to complete the thin film EL element.
【０００８】図３は第３実施例における薄膜ＥＬ素子の
部分斜視図である。同図において、１はガラス基板、２
は第１電極、３は第１絶縁層、４は発光層、５は第２絶
縁層、６は第２電極である。この実施例では、補助電極
７としてＣｕ層７ａとＡｌ層７ｂとからなる２層構造を
用いている。補助電極７の表面にＣｕを用いることによ
り、駆動回路に接続する際のはんだ付けが容易になる。
また第１電極２、第２電極６ともにＩＴＯを用いている
ので、フィルタを張り合わせたマルチカラーパネルを製
作するのに適している。このときのエッチング方法は、
Ａｒによるスパッタエッチング法を用いた。図１（ｄ）
に示したように補助電極のパターン形成後、Ａｒスパッ
タエッチングによりＣｕ／Ａｌの２層を続けてエッチン
グした。レジストは、スパッタエッチングしたチャンバ
内で酸素プラズマによるアッシングにより除去した。次
のＩＴＯのエッチングも前記と同様の方法による。この
ようなエッチング方法を用いると、ウエットエッチング
と異なり、２層であっても段差ができずにエッチングす
ることができる。またアンダカットも生じないので、補
助電極のように線幅の狭いものをパターニングするのに
適している。更に、ドライなプロセスなので、エッチン
グ液がしみ込んで剥離するというトラブルも起こらな
い。FIG. 3 is a partial perspective view of a thin film EL element according to the third embodiment. In the figure, 1 is a glass substrate, 2
Is a first electrode, 3 is a first insulating layer, 4 is a light emitting layer, 5 is a second insulating layer, and 6 is a second electrode. In this embodiment, the auxiliary electrode 7 has a two-layer structure including a Cu layer 7a and an Al layer 7b. The use of Cu on the surface of the auxiliary electrode 7 facilitates soldering when connecting to the drive circuit.
Moreover, since ITO is used for both the first electrode 2 and the second electrode 6, it is suitable for manufacturing a multi-color panel in which filters are laminated. The etching method at this time is
A sputter etching method using Ar was used. Figure 1 (d)
After forming the pattern of the auxiliary electrode as shown in, the two layers of Cu / Al were successively etched by Ar sputter etching. The resist was removed by ashing with oxygen plasma in a sputter-etched chamber. The subsequent etching of ITO is performed by the same method as described above. By using such an etching method, unlike wet etching, even two layers can be etched without forming a step. Also, since undercut does not occur, it is suitable for patterning an electrode having a narrow line width such as an auxiliary electrode. Furthermore, since it is a dry process, the problem that the etching solution permeates and peels off does not occur.
【０００９】図４は第４実施例における薄膜ＥＬ素子の
断面図で、補助電極７の位置を薄膜ＥＬパネル画素の端
部に設定したものである。このようにすると、前記画素
が補助電極７によって分断されることがないので、表示
品質が向上する。FIG. 4 is a sectional view of a thin film EL element in the fourth embodiment, in which the position of the auxiliary electrode 7 is set at the end of the thin film EL panel pixel. In this way, the pixel is not divided by the auxiliary electrode 7, so that the display quality is improved.
【００１０】図５は第５実施例として、補助電極の形状
について比較した説明図である。同図において、（ａ）
は上記第１実施例における補助電極の形状と配置を示
し、補助電極７は画素の中心を通って配置されている。
また、（ｂ）は上記第４実施例における補助電極の形状
と配置を示し、補助電極７は画素の端部を通って配置さ
れている。第５実施例は（ｃ）および（ｄ）に示すよう
に、画素の隙間を補助電極７で埋めたもので、（ｃ），
（ｄ）のＡ−Ａ断面は（ｅ）に示す通りである。このよ
うにすることによって透明電極の抵抗を更に下げること
ができる。この場合、補助電極に光の反射、透過の少な
い物質を使用すると、コントラストの向上に寄与するこ
とができる。FIG. 5 is an explanatory diagram comparing the shapes of the auxiliary electrodes as a fifth embodiment. In the figure, (a)
Shows the shape and arrangement of the auxiliary electrode in the first embodiment, and the auxiliary electrode 7 is arranged through the center of the pixel.
Further, (b) shows the shape and arrangement of the auxiliary electrode in the fourth embodiment, and the auxiliary electrode 7 is arranged through the end portion of the pixel. In the fifth embodiment, as shown in (c) and (d), a gap between pixels is filled with an auxiliary electrode 7, and (c),
The section AA of (d) is as shown in (e). By doing so, the resistance of the transparent electrode can be further reduced. In this case, if the auxiliary electrode is made of a material that hardly reflects and transmits light, it can contribute to the improvement of contrast.
【００１１】[0011]
【発明の効果】以上説明したように本発明によれば、透
明電極と補助電極とを連続して蒸着することにしたの
で、透明電極上にフォトリソグラフによる汚染のない状
態で補助電極が成膜され、透明電極と補助電極との密着
性が良い。また、真空状態を維持したまま透明電極と補
助電極とを続けて蒸着し、次に大気圧のもとで補助電極
と透明電極とのパターニングを連続して行うことによ
り、従来のような煩雑な電極形成工程を単純化すること
ができ、またこれによって薄膜ＥＬ素子の製造時間の大
幅短縮が可能となる。As described above, according to the present invention, since the transparent electrode and the auxiliary electrode are continuously vapor-deposited, the auxiliary electrode is formed on the transparent electrode without contamination by photolithography. Therefore, the adhesion between the transparent electrode and the auxiliary electrode is good. In addition, the transparent electrode and the auxiliary electrode are continuously vapor-deposited while maintaining the vacuum state, and then the patterning of the auxiliary electrode and the transparent electrode is continuously performed under the atmospheric pressure, which is complicated as in the conventional case. The electrode forming process can be simplified, and the manufacturing time of the thin film EL element can be greatly shortened.
【図１】第１実施例における電極形成工程を（ａ）〜
（ｉ）の順に説明した図である。FIG. 1A to FIG. 1C show electrode forming steps in the first embodiment.
It is a figure demonstrated in order of (i).
【図２】第２実施例における電極形成工程を（ａ）〜
（ｌ）の順に説明した図である。2A to 2C show an electrode forming step in the second embodiment.
It is a figure demonstrated in order of (l).
【図３】第３実施例における薄膜ＥＬ素子の部分斜視図
である。FIG. 3 is a partial perspective view of a thin film EL element according to a third embodiment.
【図４】第４実施例における薄膜ＥＬ素子の断面図であ
る。FIG. 4 is a sectional view of a thin film EL device according to a fourth embodiment.
【図５】補助電極の形状について比較した説明図で、
（ａ）は第１実施例、（ｂ）は第４実施例、（ｃ）〜
（ｄ）は第５実施例をそれぞれ示し、（ｅ）は（ｃ）お
よび（ｄ）のＡ−Ａ断面図である。FIG. 5 is an explanatory view comparing the shapes of auxiliary electrodes,
(A) is 1st Example, (b) is 4th Example, (c)-
(D) shows 5th Example, (e) is an AA sectional view of (c) and (d).
【図６】本発明による電極形成工程のフローチャートで
ある。FIG. 6 is a flowchart of an electrode forming process according to the present invention.
【図７】従来の技術による電極形成工程のフローチャー
トである。FIG. 7 is a flowchart of an electrode forming process according to a conventional technique.
１ ガラス基板 ２ 第１電極 ３ 第１絶縁層 ４ 発光層 ５ 第２絶縁層 ６ 第２電極 ７ 補助電極 ８ レジスト 1 Glass Substrate 2 First Electrode 3 First Insulating Layer 4 Light Emitting Layer 5 Second Insulating Layer 6 Second Electrode 7 Auxiliary Electrode 8 Resist
Claims (1)
絶縁層、発光層、第２の絶縁層、第２の電極を順次積層
し、少なくとも一方の電極に補助電極を設けてなる薄膜
ＥＬ素子の製造方法であって、電極および補助電極を形
成する手段として、 （１）電極をほぼ全面に成膜する （２）前記電極の上に補助電極となる薄膜を成膜する （３）補助電極をパターニングするレジストを形成する （４）補助電極膜のみをエッチングする （５）レジストを除去し、電極をパターニングするレジ
ストを形成する （６）電極をエッチングする （７）レジストを除去する 工程順序であることを特徴とする薄膜ＥＬ素子の製造方
法。1. A first electrode, a first insulating layer, a light emitting layer, a second insulating layer, and a second electrode are sequentially laminated on an insulating and heat resistant substrate, and an auxiliary electrode is provided on at least one electrode. As a means for forming an electrode and an auxiliary electrode in the method of manufacturing a thin-film EL device having the following: (1) forming a film of the electrode on substantially the entire surface; and (2) forming a thin film of the auxiliary electrode on the electrode. 3) Forming a resist for patterning the auxiliary electrode (4) Etching only the auxiliary electrode film (5) Removing the resist and forming a resist for patterning the electrode (6) Etching the electrode (7) Removing the resist A method of manufacturing a thin film EL element, characterized in that
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5032621A JPH06223971A (en) | 1993-01-28 | 1993-01-28 | Manufacture of thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5032621A JPH06223971A (en) | 1993-01-28 | 1993-01-28 | Manufacture of thin film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06223971A true JPH06223971A (en) | 1994-08-12 |
Family
ID=12363928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5032621A Pending JPH06223971A (en) | 1993-01-28 | 1993-01-28 | Manufacture of thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06223971A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332073A (en) * | 2002-03-07 | 2003-11-21 | Semiconductor Energy Lab Co Ltd | Light emitting device and its manufacturing method |
| JP2004006278A (en) * | 2002-03-26 | 2004-01-08 | Semiconductor Energy Lab Co Ltd | Light-emitting device and its manufacturing method |
| JP2005123012A (en) * | 2003-10-16 | 2005-05-12 | Pioneer Electronic Corp | Organic electroluminescent display panel, and method of manufacturing the same |
| JP2005302508A (en) * | 2004-04-12 | 2005-10-27 | Fuji Photo Film Co Ltd | Transparent conductive sheet and electroluminescent element using it |
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