JPH05224220A - Formation of pattern of substrate for liquid crystal display element - Google Patents
Formation of pattern of substrate for liquid crystal display elementInfo
- Publication number
- JPH05224220A JPH05224220A JP5598892A JP5598892A JPH05224220A JP H05224220 A JPH05224220 A JP H05224220A JP 5598892 A JP5598892 A JP 5598892A JP 5598892 A JP5598892 A JP 5598892A JP H05224220 A JPH05224220 A JP H05224220A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- etching
- substrate
- liquid crystal
- acetic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Manufacturing Of Printed Circuit Boards (AREA)
- Liquid Crystal (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、塩酸、塩化第二鉄及び
酢酸を混合した金属用エッチング液を使用して、液晶表
示素子用基板に於ける電極パターンを形成する方法に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an electrode pattern on a substrate for a liquid crystal display device by using an etching solution for metals which is a mixture of hydrochloric acid, ferric chloride and acetic acid.
【0002】[0002]
【従来の技術】従来より、ITO(インジュウム−チン
−オキサイド)及び酸化インジュウム膜は、低抵抗で高
い透過率を示すことから、透明導電被膜として最適であ
り、液晶表示素子用基板の電極として欠かせないものに
なっている。又、近年、液晶素子の高精細及び大画面化
に伴い、ITO及び酸化インジュウム膜単体の抵抗値で
は対応できず、通常ITO及び酸化インジュウム膜の透
明電極パターンに沿って金属膜の金属配線パターンを形
成することにより低抵抗化を実現している。金属配線材
料としては、モリブデンなどが使用されている。2. Description of the Related Art Conventionally, since ITO (indium-tin-oxide) and indium oxide films have low resistance and high transmittance, they are optimal as transparent conductive films and are essential as electrodes for liquid crystal display device substrates. It has become impossible. Further, in recent years, with the increase in definition and screen size of liquid crystal elements, the resistance value of ITO and indium oxide film alone cannot cope with it, and a metal wiring pattern of a metal film is usually formed along the transparent electrode pattern of ITO and indium oxide film. By forming it, low resistance is realized. Molybdenum or the like is used as the metal wiring material.
【0003】そして、エッチング液としては、ITO及
び酸化インジュウム膜に対しては、塩酸と塩化第二鉄の
2液よりなる混合液が、また金属配線材料に対しては、
燐酸、硝酸、酢酸の混合液が、最もよく用いられてき
た。As an etching solution, a mixed solution of two solutions of hydrochloric acid and ferric chloride is used for the ITO and indium oxide film, and for the metal wiring material,
A mixture of phosphoric acid, nitric acid and acetic acid has been most often used.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、上記従
来例では、サイドエッチ量が大きく、エッチング時のコ
ントロールが難しく、その為に配線抵抗値が大きく変動
するという欠点があった。また、従来、透明電極パター
ンのエッチング及び金属配線パターンのエッチングは、
異なるエッチング液を使用しているために、製造工程の
煩雑さによる工程間での基板の欠けや、ゴミの付着など
によるパターン不良や、電極の隣接間ショートなどの発
生、更にはセル組み立て工程でのセルギャップの不良に
つながり、製品の製造歩留まりを著しく減少させる原因
とも成っていた。However, in the above-mentioned conventional example, there is a drawback that the side etching amount is large and it is difficult to control during etching, so that the wiring resistance value largely changes. Further, conventionally, the etching of the transparent electrode pattern and the etching of the metal wiring pattern are
Since different etching liquids are used, the manufacturing process is complicated and the substrate is chipped between the processes, pattern defects due to dust adhesion, short circuits between adjacent electrodes, and the cell assembly process. It also leads to a defective cell gap and causes a significant decrease in the manufacturing yield of products.
【0005】本発明は、上記のような従来技術の問題点
を解決するためになされたものであり、塩酸、塩化第二
鉄に酢酸を添加したエッチング液を用いることにより、
サイドエッチ量の少ない液晶表示素子用基板のパタ−ン
形成方法を提供することを目的とするものである。The present invention has been made in order to solve the above-mentioned problems of the prior art, and by using an etching solution obtained by adding acetic acid to hydrochloric acid and ferric chloride,
An object of the present invention is to provide a method for forming a pattern on a substrate for a liquid crystal display device with a small amount of side etching.
【0006】また、本発明は、従来、透明電極および金
属配線パタ−ンのエッチングに2種類必要であったエッ
チング液を、塩酸、塩化第二鉄に酢酸を添加した1種類
のエッチング液でエッチングを可能にし、サイドエッチ
量を減少させると共に、製造工程の煩雑さを無くす事に
より、製造歩留まりを上げ、更に、製造コストの低減化
をも可能にする液晶表示素子用基板のパタ−ン形成方法
を提供することを目的とするものである。Further, according to the present invention, two kinds of etching solutions which were conventionally required for etching transparent electrodes and metal wiring patterns are etched with one kind of etching solution obtained by adding acetic acid to hydrochloric acid and ferric chloride. Patterning method for a liquid crystal display device substrate, which enables the production yield to be increased and the production cost to be reduced by reducing the side etch amount and eliminating the complexity of the production process. It is intended to provide.
【0007】[0007]
【課題を解決するための手段】本発明によれば、透明電
極及び金属配線のパターニングに於いて、従来の塩酸、
塩化第二鉄の混合エッチング液に酢酸を加えることによ
り、パターニング時でのサイドエッチング量を低減さ
せ、更に透明電極膜及び金属配線膜の両方を同じエッチ
ング液により、パターニングできるようにしたものであ
る。According to the present invention, in patterning transparent electrodes and metal wiring, conventional hydrochloric acid,
By adding acetic acid to the mixed etching solution of ferric chloride, the side etching amount at the time of patterning can be reduced, and both the transparent electrode film and the metal wiring film can be patterned by the same etching solution. .
【0008】即ち、本発明は、液晶表示素子用基板の表
面にエッチングによりストライプ状の透明電極および金
属配線パタ−ンからなる電極群を形成する方法におい
て、少なくとも電極パタ−ンとなる透明導電被膜を成膜
した後、エッチング液として塩酸、塩化第二鉄および酢
酸の混合液を用いてパターニングすることを特徴とする
液晶表示素子用基板のパタ−ン形成方法である。That is, according to the present invention, in a method for forming an electrode group consisting of transparent electrodes in stripes and metal wiring patterns by etching on the surface of a substrate for a liquid crystal display element, at least a transparent conductive film serving as an electrode pattern. After forming a film, the method for patterning a substrate for a liquid crystal display element is characterized by patterning using a mixed solution of hydrochloric acid, ferric chloride and acetic acid as an etching solution.
【0009】本発明において用いられるエッチング液
は、塩酸(37wt%):塩化第二鉄(35wt%):
酢酸(95wt%)の割合が、2〜5:2〜5:1(V
ol比)、好ましくは3:3:1(Vol比)の割合か
らなる混合液が好ましい。The etching solution used in the present invention is hydrochloric acid (37 wt%): ferric chloride (35 wt%):
The ratio of acetic acid (95 wt%) is 2-5: 2-5: 1 (V
(Ol ratio), preferably 3: 3: 1 (Vol ratio).
【0010】また、前記透明電極パタ−ンはITOまた
は酸化インジュウムからなり、金属配線パタ−ンはモリ
ブデンからなるものが好ましい。The transparent electrode pattern is preferably made of ITO or indium oxide, and the metal wiring pattern is preferably made of molybdenum.
【0011】本発明においては、エッチング液として塩
酸、塩化第二鉄および酢酸の混合液を用いて、透明電極
パタ−ンのみをパターニングしてもよい。また、透明電
極および金属配線パタ−ンの両者を、エッチング液とし
て塩酸、塩化第二鉄および酢酸の混合液を用いてパター
ニングしてもよい。前者の透明電極パタ−ンのみをパタ
ーニングする場合には、金属配線パタ−ンのパターニン
グには、従来使用されていたエッチング液、例えば燐
酸、硝酸、酢酸の混合液を用いることができる。In the present invention, only the transparent electrode pattern may be patterned using a mixed solution of hydrochloric acid, ferric chloride and acetic acid as an etching solution. Alternatively, both the transparent electrode and the metal wiring pattern may be patterned by using a mixed solution of hydrochloric acid, ferric chloride and acetic acid as an etching solution. In the case of patterning only the transparent electrode pattern of the former case, a conventionally used etching solution, for example, a mixed solution of phosphoric acid, nitric acid and acetic acid can be used for patterning the metal wiring pattern.
【0012】[0012]
【実施例】以下に実施例を挙げて本発明を具体的に説明
する。EXAMPLES The present invention will be specifically described below with reference to examples.
【0013】実施例1 図1は本願発明の液晶表示素子用基板のパタ−ン形成方
法の一実施例の前半の工程を示す工程図、および図2は
図1の液晶表示素子用基板のパタ−ン形成方法の後半の
工程を示す工程図である。以下に示す様に、図1および
図2に示す工程により液晶表示素子用基板のパタ−ンを
形成した。Embodiment 1 FIG. 1 is a process diagram showing a first half of steps of an embodiment of a method for forming a pattern for a liquid crystal display device substrate of the present invention, and FIG. 2 is a pattern of the liquid crystal display device substrate of FIG. FIG. 6 is a process drawing showing a latter half of the process for forming a battery. As shown below, a pattern of a liquid crystal display device substrate was formed by the steps shown in FIGS.
【0014】ガラス基板4上に膜厚1500ÅのITO
薄膜1をスパッタリング法で成膜した(図1(a)参
照)。その後、該ガラス基板にフォトレジスト3を約1
μmの厚みに塗布し、画素電極パターンマスクによって
露光後、現像し、画素電極パターンレジスト像を形成し
た(図1(b)参照)。ITO having a film thickness of 1500 Å is formed on the glass substrate 4.
The thin film 1 was formed by a sputtering method (see FIG. 1 (a)). Then, about 1 part of photoresist 3 is applied to the glass substrate.
It was applied to a thickness of μm, exposed with a pixel electrode pattern mask, and then developed to form a pixel electrode pattern resist image (see FIG. 1B).
【0015】次に、前記ガラス基板を塩酸(37wt
%)、塩化第二鉄(35wt%)及び酢酸(95wt
%)の比率を3:3:1(vol比)の割合で調合した
混合エッチング液5により、45℃,180秒間エッチ
ングを行い(図1(c)参照)、サイドエッチの少な
い、極めて良好な画素電極パターンを得た(図1(d)
参照)。Next, the glass substrate was treated with hydrochloric acid (37 wt.
%), Ferric chloride (35 wt%) and acetic acid (95 wt)
%) Is mixed at a ratio of 3: 3: 1 (vol ratio), and etching is performed at 45 ° C. for 180 seconds (see FIG. 1C), and the side etching is small and extremely good. A pixel electrode pattern was obtained (Fig. 1 (d))
reference).
【0016】同様に、モリブデン膜2を3000Åの膜
厚にスパッタリング法で成膜した後(図2(e)参
照)、該基板にフォトレジスト3を約1μmの厚みに塗
布し(図2(f)参照)、金属配線用マスクで露光した
後、現像して金属配線パターンレジスト像を形成し、燐
酸系エッチング液6で、室温にて120秒エッチングを
行い(図2(g)参照)、金属配線パターンを形成した
液晶表示素子用基板を得た(図2(h)参照)。Similarly, after forming the molybdenum film 2 to a film thickness of 3000 Å by the sputtering method (see FIG. 2E), the photoresist 3 is applied to the substrate to a thickness of about 1 μm (FIG. 2F). )), After exposure with a metal wiring mask, development is performed to form a metal wiring pattern resist image, and etching is performed with phosphoric acid-based etching solution 6 at room temperature for 120 seconds (see FIG. 2 (g)). A substrate for a liquid crystal display element having a wiring pattern was obtained (see FIG. 2 (h)).
【0017】実施例2 図3は本願発明の液晶表示素子用基板のパタ−ン形成方
法の他の実施例の前半の工程を示す工程図、および図4
は図3の液晶表示素子用基板のパタ−ン形成方法の後半
の工程を示す工程図である。以下に示す様に、図3およ
び図4に示す工程により液晶表示素子用基板のパタ−ン
を形成した。Embodiment 2 FIG. 3 is a process diagram showing the first half of the process of another embodiment of the method for forming a pattern for a liquid crystal display device substrate according to the present invention, and FIG.
FIG. 4A is a process diagram showing a latter half of the pattern forming method for the liquid crystal display element substrate of FIG. 3; As shown below, a pattern of a liquid crystal display device substrate was formed by the steps shown in FIGS.
【0018】ガラス基板4上に膜厚1500ÅのITO
薄膜1をスパッタリング法で成膜した後(図3(a)参
照)、上記ITO膜上にモリブデン膜2を3000Åの
厚さに同様のスパッタリング法で成膜した(図3(b)
参照)。次に、上記成膜済みの基板にフォトレジスト3
を約1μmの厚みに塗布し、金属配線パターンマスクを
用いてこれを露光し、現像を行った(図3(c)参
照)。ITO having a thickness of 1500 Å is formed on the glass substrate 4.
After the thin film 1 was formed by the sputtering method (see FIG. 3A), the molybdenum film 2 was formed on the ITO film by the same sputtering method with a thickness of 3000 Å (FIG. 3B).
reference). Next, a photoresist 3 is formed on the substrate on which the film has been formed.
Was applied to a thickness of about 1 μm, and this was exposed using a metal wiring pattern mask and developed (see FIG. 3C).
【0019】次に、前記ガラス基板を塩酸(37wt
%)、塩化第二鉄(35wt%)及び酢酸(95wt
%)の比率を3:3:1(vol比)の割合で調合した
混合エッチング液5により、25℃,180秒間エッチ
ングを行い(図3(d)参照)、サイドエッチの少な
い、極めて良好な金属配線パターンを得た(図4(e)
参照)。このとき、露光しているITO膜には大きな影
響がなかった。Next, the glass substrate was treated with hydrochloric acid (37 wt.
%), Ferric chloride (35 wt%) and acetic acid (95 wt)
%) Is mixed at a ratio of 3: 3: 1 (vol ratio), and etching is performed at 25 ° C. for 180 seconds (see FIG. 3D), and the side etching is small and extremely good. A metal wiring pattern was obtained (Fig. 4 (e))
reference). At this time, the exposed ITO film was not significantly affected.
【0020】次に、金属配線パターンを形成した基板に
再度フォトレジスト3を約1μmの厚みに塗布し、画素
電極パターンマスクによって露光後、現像し、画素電極
パターンレジスト像を形成した。次に、該基板を塩酸
(37wt%)、塩化第二鉄(35wt%)及び酢酸
(95wt%)の比率を3:3:1(vol比)の割合
で調合した混合エッチング液5により、45℃,180
秒間エッチングを行った(図4(f)参照)。実施例1
と同様に、サイドエッチの少ない、極めて良好な画素電
極パターンを形成した液晶表示素子用基板を得た(図4
(g)参照)。Next, the photoresist 3 was applied again on the substrate having the metal wiring pattern formed thereon to a thickness of about 1 μm, exposed by a pixel electrode pattern mask, and then developed to form a pixel electrode pattern resist image. Next, the substrate was treated with a mixed etching solution 5 prepared by mixing hydrochloric acid (37 wt%), ferric chloride (35 wt%) and acetic acid (95 wt%) at a ratio of 3: 3: 1 (vol ratio) to 45 ℃, 180
Etching was performed for 2 seconds (see FIG. 4 (f)). Example 1
Similarly to the above, a liquid crystal display element substrate having a very good pixel electrode pattern with little side etching was obtained (FIG. 4).
(See (g)).
【0021】[0021]
【発明の効果】以上説明したように、本発明によれば、
エッチング液として、塩酸、塩化第二鉄および酢酸の混
合液を使用することにより、サイドエッチの少ない良好
なパターンが得られる。As described above, according to the present invention,
By using a mixed solution of hydrochloric acid, ferric chloride and acetic acid as an etching solution, a good pattern with less side etching can be obtained.
【0022】又、今まで透明電極と金属配線のパターニ
ングの為に2種類必要であったエッチング液が1種類で
可能となったことにより、製造工程の煩雑さを無くすこ
とができ、製造歩留まりが上がり、製造コストの低減化
にも効果がある。更に、該エッチング液の温度を変える
ことにより、透明導電被膜及び金属被膜の2層を積層し
た後、上部の膜からパターニングすることもできる。Further, since it is possible to use only one type of etching solution, which has been required for patterning the transparent electrode and the metal wiring up to now, the complexity of the manufacturing process can be eliminated and the manufacturing yield can be improved. It is also effective in reducing the manufacturing cost. Furthermore, by changing the temperature of the etching solution, it is possible to stack two layers of a transparent conductive film and a metal film, and then pattern from the upper film.
【図1】本願発明の液晶表示素子用基板のパタ−ン形成
方法の一実施例の前半の工程を示す工程図である。FIG. 1 is a process drawing showing a first half process of one embodiment of a pattern forming method for a liquid crystal display element substrate of the present invention.
【図2】図1の液晶表示素子用基板のパタ−ン形成方法
の後半の工程を示す工程図である。FIG. 2 is a process drawing showing a latter half of the pattern forming method for the liquid crystal display element substrate of FIG.
【図3】本願発明の液晶表示素子用基板のパタ−ン形成
方法の他の実施例の前半の工程を示す工程図である。FIG. 3 is a process drawing showing a first half process of another embodiment of the pattern forming method for a liquid crystal display element substrate of the present invention.
【図4】図3の液晶表示素子用基板のパタ−ン形成方法
の後半の工程を示す工程図である。FIG. 4 is a process drawing showing a latter half of the method for forming a pattern on the liquid crystal display element substrate of FIG. 3;
1 ITO 2 モリブデン 3 フォトレジスト 4 ガラス基板 5 混合エッチング液 6 燐酸系エッチング液 1 ITO 2 molybdenum 3 photoresist 4 glass substrate 5 mixed etching solution 6 phosphoric acid type etching solution
Claims (4)
によりストライプ状の透明電極および金属配線パタ−ン
からなる電極群を形成する方法において、少なくとも電
極パタ−ンとなる透明導電被膜を成膜した後、エッチン
グ液として塩酸、塩化第二鉄および酢酸の混合液を用い
てパターニングすることを特徴とする液晶表示素子用基
板のパタ−ン形成方法。1. A method of forming an electrode group composed of a stripe-shaped transparent electrode and a metal wiring pattern on a surface of a liquid crystal display element substrate by etching, wherein a transparent conductive film serving as at least an electrode pattern is formed. Then, a pattern forming method of a substrate for a liquid crystal display element, which comprises patterning using a mixed solution of hydrochloric acid, ferric chloride and acetic acid as an etching solution.
塩化第二鉄(35wt%):酢酸(95wt%)=2〜
5:2〜5:1(Vol比)の割合からなる混合液であ
る請求項1記載の液晶表示素子用基板のパタ−ン形成方
法。2. The etching solution is hydrochloric acid (37 wt%):
Ferric chloride (35 wt%): acetic acid (95 wt%) = 2
The method for forming a pattern on a substrate for a liquid crystal display element according to claim 1, which is a mixed solution having a ratio of 5: 2 to 5: 1 (Vol ratio).
ュウム−チン−オキサイド)または酸化インジュウムか
らなり、金属配線パタ−ンがモリブデンからなる請求項
1記載の液晶表示素子用基板のパタ−ン形成方法。3. The pattern formation of a substrate for a liquid crystal display device according to claim 1, wherein the transparent electrode pattern is made of ITO (indium-tin oxide) or indium oxide, and the metal wiring pattern is made of molybdenum. Method.
両者を、エッチング液として塩酸、塩化第二鉄および酢
酸の混合液を用いてパターニングする請求項1記載の液
晶表示素子用基板のパタ−ン形成方法。4. The pattern of a substrate for a liquid crystal display device according to claim 1, wherein both the transparent electrode and the metal wiring pattern are patterned by using a mixed solution of hydrochloric acid, ferric chloride and acetic acid as an etching solution. Forming method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5598892A JPH05224220A (en) | 1992-02-07 | 1992-02-07 | Formation of pattern of substrate for liquid crystal display element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5598892A JPH05224220A (en) | 1992-02-07 | 1992-02-07 | Formation of pattern of substrate for liquid crystal display element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05224220A true JPH05224220A (en) | 1993-09-03 |
Family
ID=13014471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5598892A Pending JPH05224220A (en) | 1992-02-07 | 1992-02-07 | Formation of pattern of substrate for liquid crystal display element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05224220A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0660381A1 (en) * | 1993-12-21 | 1995-06-28 | Koninklijke Philips Electronics N.V. | Method of manufacturing a transparent conductor pattern and a liquid crystal display device |
KR100442026B1 (en) * | 2000-12-22 | 2004-07-30 | 동우 화인켐 주식회사 | Etchant for ito layer and method for the same therewith |
KR100532080B1 (en) * | 2001-05-07 | 2005-11-30 | 엘지.필립스 엘시디 주식회사 | Echant for amorphous indium-tin-oxide and fabrication method using the same |
KR100590916B1 (en) * | 1999-06-23 | 2006-06-19 | 비오이 하이디스 테크놀로지 주식회사 | Method of manufacturing TFT array substrate |
-
1992
- 1992-02-07 JP JP5598892A patent/JPH05224220A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0660381A1 (en) * | 1993-12-21 | 1995-06-28 | Koninklijke Philips Electronics N.V. | Method of manufacturing a transparent conductor pattern and a liquid crystal display device |
KR100590916B1 (en) * | 1999-06-23 | 2006-06-19 | 비오이 하이디스 테크놀로지 주식회사 | Method of manufacturing TFT array substrate |
KR100442026B1 (en) * | 2000-12-22 | 2004-07-30 | 동우 화인켐 주식회사 | Etchant for ito layer and method for the same therewith |
KR100532080B1 (en) * | 2001-05-07 | 2005-11-30 | 엘지.필립스 엘시디 주식회사 | Echant for amorphous indium-tin-oxide and fabrication method using the same |
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