JP2651940B2 - Substrate with transparent conductive film - Google Patents

Substrate with transparent conductive film

Info

Publication number
JP2651940B2
JP2651940B2 JP25112189A JP25112189A JP2651940B2 JP 2651940 B2 JP2651940 B2 JP 2651940B2 JP 25112189 A JP25112189 A JP 25112189A JP 25112189 A JP25112189 A JP 25112189A JP 2651940 B2 JP2651940 B2 JP 2651940B2
Authority
JP
Japan
Prior art keywords
light
transparent conductive
substrate
conductive film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP25112189A
Other languages
Japanese (ja)
Other versions
JPH03112013A (en
Inventor
茂 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HOOYA KK
Original Assignee
HOOYA KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HOOYA KK filed Critical HOOYA KK
Priority to JP25112189A priority Critical patent/JP2651940B2/en
Publication of JPH03112013A publication Critical patent/JPH03112013A/en
Application granted granted Critical
Publication of JP2651940B2 publication Critical patent/JP2651940B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は透明導電膜付基板に関するものであり、特に
各種ディスプレーに使用され、コントラストの向上を計
るために遮光性膜を被着した透明導電膜付基板に関する
ものである。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate with a transparent conductive film, and more particularly to a transparent conductive film used for various displays and having a light-shielding film applied to improve contrast. The present invention relates to a substrate with a film.

[従来の技術] 従来、この種の透明導電膜付基板としては第5図(平
面図)に示すものがあった。この透明導電膜付基板1
は、液晶ディスプレーの単純マトリックス型に使用する
ものであり、ガラス基板2の一主表面上に、短冊状の複
数の透明導電膜からなる電極3を並列して被着し、その
電極3間にカーボン粒子を含んだアクリル樹脂からな
る、絶縁性の有機樹脂の遮光性膜パターン4をスクリー
ン印刷等により被着してなるものであった。
[Prior Art] Conventionally, as this type of substrate with a transparent conductive film, there is one shown in FIG. 5 (plan view). This substrate 1 with a transparent conductive film
Is used for a simple matrix type of a liquid crystal display, in which electrodes 3 made of a plurality of strip-shaped transparent conductive films are attached in parallel on one main surface of a glass substrate 2, and between the electrodes 3. A light-shielding film pattern 4 of an insulating organic resin made of an acrylic resin containing carbon particles was applied by screen printing or the like.

[発明が解決しようとする課題] しかしながら、従来の透明導電膜付基板1におけるコ
ントラスト向上のための遮光性膜パターン4が有機樹脂
であることから、長時間電界を印加して起動すると遮光
率が低下してしまう問題点があった。すなわち遮光率の
経時変化が生じてしまい、コントラストが低下するとい
う問題点があった。また、有機樹脂からなる遮光性膜パ
ターンは、有機樹脂中のカーボン粒子の量の増大させる
ことにより遮光率を向上させることは考えられるが、カ
ーボン粒子の量を増大させると導電性を生ずることとな
る。したがって、有機樹脂からなる遮光性膜パターンが
十分な絶縁性を維持するためにその遮光率は最大96%
(可視光領域)程度であり、近年要求されているコント
ラストの高い高品位ディスプレーに適さない問題点もあ
った。
[Problem to be Solved by the Invention] However, since the light-shielding film pattern 4 for improving the contrast in the conventional substrate 1 with a transparent conductive film is made of an organic resin, the light-shielding ratio is reduced when an electric field is applied for a long time to start. There was a problem that it decreased. That is, there is a problem that the temporal change of the light blocking ratio occurs and the contrast is reduced. In addition, a light-shielding film pattern made of an organic resin is considered to improve the light-shielding rate by increasing the amount of carbon particles in the organic resin.However, when the amount of carbon particles is increased, conductivity is generated. Become. Therefore, in order for the light-shielding film pattern made of organic resin to maintain sufficient insulation, the light-shielding rate is up to 96%.
(Visible light range), which is not suitable for a high-contrast display with high contrast recently required.

[課題を解決するための手段] 本発明は前述した課題を解決するためになされたもの
で、その特徴は、基板の一主表面上に、金属含有無機物
質からなる遮光性膜パターンを被着し、前記遮光性膜パ
ターン上及び前記一主表面の露出部上にスパッタリング
法により絶縁膜を積層し、さらに前記絶縁膜上に透明導
電膜を積層したことを特徴とする透明導電膜付基板であ
る。
Means for Solving the Problems The present invention has been made to solve the above-mentioned problems, and is characterized in that a light-shielding film pattern made of a metal-containing inorganic substance is formed on one main surface of a substrate. Then, an insulating film is stacked on the light-shielding film pattern and on the exposed portion of the one main surface by a sputtering method, and a transparent conductive film-coated substrate characterized by further stacking a transparent conductive film on the insulating film. is there.

[実施例] 本発明の一実施例を第1図〜第4図に基づき詳細に説
明する。
Embodiment An embodiment of the present invention will be described in detail with reference to FIGS.

尚、第1図は、本例の第2図のX−X線断面図であ
り、第2図は本例の平面図であり、第3図は、基板上に
遮光性膜パターンを被着したものの平面図であり、さら
に第4図は本例の製作工程を示す断面図である。
FIG. 1 is a cross-sectional view taken along the line XX of FIG. 2 of the present example, FIG. 2 is a plan view of the present example, and FIG. 3 is a light shielding film pattern formed on a substrate. FIG. 4 is a cross-sectional view showing a manufacturing process of the present example.

先ず、本例の透明導電膜付基板10は、液晶ディスプレ
ーの単純マトリックス型に使用するものであり、この透
明導電膜付基板10の2枚はそれぞれ、周知の液晶を内在
せしめるように対向配置される。なお、この配置方向
は、一方の透明導電膜付基板10が第2図に示す平面図の
ようであり、もう一方の透明導電膜付基板10が平面的に
第2図のものを90゜回転している方向である。
First, the substrate 10 with a transparent conductive film of the present example is used for a simple matrix type of a liquid crystal display, and two substrates of the substrate 10 with a transparent conductive film are arranged to face each other so as to incorporate a known liquid crystal. You. In this arrangement direction, one of the substrates 10 with a transparent conductive film is as shown in the plan view of FIG. 2, and the other substrate 10 with a transparent conductive film is rotated by 90 ° It is the direction you are doing.

本例の透明導電膜付基板10は、第1図及び第2図に示
すとおり、透光性基板11の一主表面上に、金属含有無機
物質からなる遮光性膜パターン12を積層し、この遮光性
膜パターン12及び透光性基板11の露出表面11a(露出
部)上に絶縁膜13と透明導電膜14とを順次積層したもの
である。
As shown in FIGS. 1 and 2, the substrate 10 with a transparent conductive film of the present example has a light-shielding film pattern 12 made of a metal-containing inorganic substance laminated on one main surface of a light-transmitting substrate 11. The insulating film 13 and the transparent conductive film 14 are sequentially laminated on the light-shielding film pattern 12 and the exposed surface 11a (exposed portion) of the light-transmitting substrate 11.

さらに、この透明導電膜付基板10について第3図及び
第4図に基づき以下に詳述する。
Further, the substrate 10 with a transparent conductive film will be described in detail below with reference to FIGS. 3 and 4.

先ず、厚さ1.1mmで一辺が190mmのアルミノボロシリケ
ートガラス(例えば、HOYA(株)製商品名NA−45)から
なる透光性基板11の一主表面上に、スパッタリング法又
は真空蒸着法によりクロム膜からなる遮光性膜(膜厚:
約1200Å)を積層する。次にこの遮光性膜上に、スピン
コート法によりポジ型レジスト膜(例えば、長瀬産業社
製商品名NPR−3300であり、膜厚は約1.0μmである。)
を積層し、プレベーク(100℃で30分)する。
First, on a main surface of a light-transmitting substrate 11 made of aluminoborosilicate glass having a thickness of 1.1 mm and a side of 190 mm (for example, trade name NA-45 manufactured by HOYA Corporation), a sputtering method or a vacuum evaporation method is used. Shielding film made of chromium film (film thickness:
About 1200Å). Next, a positive resist film (for example, NPR-3300 (trade name, manufactured by Nagase Sangyo Co., Ltd., having a film thickness of about 1.0 μm) is formed on the light-shielding film by a spin coating method.
And pre-baking (100 ° C. for 30 minutes).

次に、所望のパターンを有するフォトマスクを用いて
密着露光法により、前述したポジ型レジスト膜を露光
し、専用現像液で現像し、その後ポジ型レジスト膜パタ
ーンをマスクとして、例えば、硝酸第2セリウムアンモ
ンと過塩素酸との混合液で遮光性膜をエッチングして遮
光性膜パターン12(可視光領域(380nm〜780nm)におい
て遮光率は、99.8%)を形成する(第3図及び第4図
(a)参照。)。なお、この遮光性膜パターン12は、第
3図に示すとおり、遮光性膜がエッチングされ透光性基
板11の表面が露出して露出表面11aを有しており、この
露出表面11aは、一辺の長さL1が約50μmの正方形状を
なし、かつ隣り合う露出表面11a間の距離L2は20μmで
ある。
Next, the above-described positive resist film is exposed to light by a contact exposure method using a photomask having a desired pattern, and is developed with a dedicated developer. The light-shielding film is etched with a mixed solution of cerium ammonium and perchloric acid to form a light-shielding film pattern 12 (the light-shielding rate is 99.8% in the visible light region (380 nm to 780 nm) (FIGS. 3 and 4). See FIG. As shown in FIG. 3, the light-shielding film pattern 12 has an exposed surface 11a where the light-shielding film is etched and the surface of the light-transmitting substrate 11 is exposed, and the exposed surface 11a has one side. the length L 1 forms the approximately 50μm square of, and the distance L 2 between the exposed surface 11a adjacent is 20 [mu] m.

次に第3図(b)に示すように、前述した、遮光性膜
パターン12及び露出表面11a上に、スパッタリング法に
よりSiO2からなる絶縁膜13(膜厚:約3000Å)を積層す
る。なお、スパッタリング法は反応性スパッタリング法
で、ターゲットはSiO2であり、アルゴンと酸素との混合
雰囲気中でスパッタリングを行なう。この絶縁膜13は、
図に示すとおり凹凸(段差)を有するものである。
Next, as shown in FIG. 3B, an insulating film 13 (thickness: about 3000 Å) made of SiO 2 is laminated on the light-shielding film pattern 12 and the exposed surface 11a by a sputtering method. Note that the sputtering method is a reactive sputtering method, the target is SiO 2 , and sputtering is performed in a mixed atmosphere of argon and oxygen. This insulating film 13
As shown in the figure, it has irregularities (steps).

次に、同図(c)に示すように絶縁膜13上に、スパッ
タリング法により、インジウム、ティン・オキサイド
(ITO)からなる透明導電膜14(膜厚:約1700Å)を積
層し、本例の透明導電膜付基板10を作製する。なお、ス
パッタリング法は、反応性スパッタリング法である。ま
た、この透明導電膜14も絶縁膜13の凹凸状にほぼならっ
てその表面も凹凸となる。すなわち、第2図に示すとお
り、遮光性膜パターン12の露出表面11aに対応する、透
明導電膜14の表面14aは凹状となり、その他の表面14bは
凸状となっている。
Next, as shown in FIG. 3C, a transparent conductive film 14 (thickness: about 1700 °) made of indium and tin oxide (ITO) is laminated on the insulating film 13 by a sputtering method. A substrate 10 with a transparent conductive film is produced. Note that the sputtering method is a reactive sputtering method. In addition, the surface of the transparent conductive film 14 also becomes uneven, substantially following the uneven shape of the insulating film 13. That is, as shown in FIG. 2, the surface 14a of the transparent conductive film 14 corresponding to the exposed surface 11a of the light-shielding film pattern 12 is concave, and the other surface 14b is convex.

さらに、本例の透明導電膜付基板10の透明導電膜14を
エッチングして第2図に示す露出表面11aに対応するよ
うな正方形状のパターンを作製する方法、すなわち透明
導電膜14の凸状部を除去し、凹状部を残す方法を以下に
述べる。
Further, the transparent conductive film 14 of the substrate 10 with a transparent conductive film of the present example is etched to form a square pattern corresponding to the exposed surface 11a shown in FIG. A method of removing the portion and leaving the concave portion will be described below.

先ず、前述した透明導電膜14上に、前述したレジスト
と同様のポジ型レジスト膜をスピンコート法により膜厚
約1μmで塗布し、100℃で30分間プレベークする。次
に、第3図及び第4図(a)で示した遮光性膜パターン
12を形成したときに使用したフォトマスクとパターンが
反転しているものを用いて露光し、専用現像液で現像す
る。
First, a positive resist film similar to the above-described resist is applied to a thickness of about 1 μm on the above-described transparent conductive film 14 by spin coating, and is prebaked at 100 ° C. for 30 minutes. Next, the light-shielding film pattern shown in FIG. 3 and FIG.
Exposure is performed using the photomask used when forming 12, and the one whose pattern is inverted, and developed with a dedicated developer.

次に、所定の透明導電膜のエッチング液(例えば、塩
化第2鉄と塩酸との混合液)で透明導電膜14をエッチン
グし、第4図(d)に示すような、透明導電膜14の凹状
部を残した透明導電膜パターン14cを作製する。
Next, the transparent conductive film 14 is etched with a predetermined transparent conductive film etchant (for example, a mixed solution of ferric chloride and hydrochloric acid), and as shown in FIG. The transparent conductive film pattern 14c leaving the concave portion is produced.

本発明は、前記実施例に限らず下記のものであっても
よい。
The present invention is not limited to the above embodiment, but may be the following.

先ず、前記実施例では金属含有無機物質からなる遮光
性膜パターンがクロム膜からなるものであったが、他の
金属膜、例えば、Ta,W,Mo等であってもよく、またクロ
ム酸化物、タンタル酸化物、モリブテン酸化物等の金属
酸化物やタンタル珪化物、タングステン珪化物、モリブ
テン珪化物等の金属珪化物でもよい。また、遮光性膜パ
ターンは一層でなくて二層等の複数層からなるものでも
よい。また遮光性膜パターンの遮光率は、可視光領域
(波長380nm〜780nm)で99.8%以上が望ましい。
First, in the above-described embodiment, the light-shielding film pattern made of a metal-containing inorganic substance was made of a chromium film. However, other metal films, for example, Ta, W, Mo, etc. And metal oxides such as tantalum oxide and molybdenum oxide, and metal silicides such as tantalum silicide, tungsten silicide and molybdenum silicide. Further, the light-shielding film pattern is not limited to one layer, but may be formed of a plurality of layers such as two layers. The light-shielding ratio of the light-shielding film pattern is preferably 99.8% or more in the visible light region (wavelength 380 nm to 780 nm).

また、前記実施例では絶縁膜としてSiO2からなるもの
であったが、他の透明な金属酸化物絶縁膜であってもよ
い。また、絶縁膜の形成方法としては反応性スパッタリ
ング法に限らず、マグネトロンスパッタリング法及び高
周波スパッタリング法等の他のスパッタリング法でもよ
い。
In the above embodiment, the insulating film is made of SiO 2 , but may be another transparent metal oxide insulating film. The method for forming the insulating film is not limited to the reactive sputtering method, but may be another sputtering method such as a magnetron sputtering method or a high-frequency sputtering method.

また、透明導電膜としては、ITO以外に、アンチモン
をドープしたSnO2等であってもよい。
Further, as the transparent conductive film, other than ITO, SnO 2 doped with antimony or the like may be used.

更に、基板としてはガラスに限らず、セラミックや金
属等であってもよく用途にあわせて適宜決定すればよ
い。
Further, the substrate is not limited to glass, but may be ceramic, metal, or the like, and may be appropriately determined according to the application.

[発明の効果] 以上のとおり本発明によれば、遮光性膜パターンの金
属含有無機物質からなることから、遮光率の経時変化が
防止でき、かつ遮光率も向上するのでコントラストの高
い高品位ディスプレーにも使用できる効果がある。
[Effects of the Invention] As described above, according to the present invention, since the light-shielding film pattern is made of a metal-containing inorganic substance, a temporal change in the light-shielding rate can be prevented and the light-shielding rate is improved, so that a high-quality display with high contrast can be obtained. There is also an effect that can be used.

【図面の簡単な説明】[Brief description of the drawings]

第1図〜第4図は本発明の一実施例を示す図であり、第
1図は第2図のX−X線断面図、第2図は平面図、第3
図は基板上に遮光性膜パターンを被着したものの平面図
及び第4図は製作工程を示す断面図である。第5図は従
来の透明導電膜付基板を示す平面図である。 10……透明導電膜付基板、11……基板、12……遮光性膜
パターン、13……絶縁膜、14……透明導電膜
1 to 4 show an embodiment of the present invention. FIG. 1 is a sectional view taken along line XX of FIG. 2, FIG. 2 is a plan view, and FIG.
FIG. 4 is a plan view of a light-shielding film pattern adhered on a substrate, and FIG. 4 is a cross-sectional view showing a manufacturing process. FIG. 5 is a plan view showing a conventional substrate with a transparent conductive film. 10 ... substrate with transparent conductive film, 11 ... substrate, 12 ... light-shielding film pattern, 13 ... insulating film, 14 ... transparent conductive film

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】基板の一主表面上に、金属含有無機物質か
らなる遮光性膜パターンを被着し、前記遮光性膜パター
ン上及び前記一主表面の露出部上にスパッタリング法に
より絶縁膜を積層し、さらに前記絶縁膜上に透明導電膜
を積層したことを特徴とする透明導電膜付基板。
A light-shielding film pattern made of a metal-containing inorganic substance is applied on one main surface of a substrate, and an insulating film is formed on the light-shielding film pattern and on an exposed portion of the one main surface by a sputtering method. A substrate with a transparent conductive film, wherein the substrate is laminated, and a transparent conductive film is further laminated on the insulating film.
JP25112189A 1989-09-27 1989-09-27 Substrate with transparent conductive film Expired - Fee Related JP2651940B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25112189A JP2651940B2 (en) 1989-09-27 1989-09-27 Substrate with transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25112189A JP2651940B2 (en) 1989-09-27 1989-09-27 Substrate with transparent conductive film

Publications (2)

Publication Number Publication Date
JPH03112013A JPH03112013A (en) 1991-05-13
JP2651940B2 true JP2651940B2 (en) 1997-09-10

Family

ID=17217978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25112189A Expired - Fee Related JP2651940B2 (en) 1989-09-27 1989-09-27 Substrate with transparent conductive film

Country Status (1)

Country Link
JP (1) JP2651940B2 (en)

Also Published As

Publication number Publication date
JPH03112013A (en) 1991-05-13

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