JP2002319321A - Method of forming for ito film - Google Patents
Method of forming for ito filmInfo
- Publication number
- JP2002319321A JP2002319321A JP2001376298A JP2001376298A JP2002319321A JP 2002319321 A JP2002319321 A JP 2002319321A JP 2001376298 A JP2001376298 A JP 2001376298A JP 2001376298 A JP2001376298 A JP 2001376298A JP 2002319321 A JP2002319321 A JP 2002319321A
- Authority
- JP
- Japan
- Prior art keywords
- shielding layer
- metal light
- ito film
- layer
- refractory metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、Ｔｉ層等の高融点
金属遮光層上にＩＴＯ膜を形成する方法に関する。The present invention relates to a method for forming an ITO film on a refractory metal light-shielding layer such as a Ti layer.
【０００２】[0002]
【従来の技術】液晶表示装置においては、透明画素電極
として、ＩＴＯ（Indium Tin Oxide）膜が広く使用され
ており、このＩＴＯ膜がＴｉ層等の高融点金属遮光層上
に設けられる場合がある。例えば、図１は、アクティブ
マトリックス型の透過型液晶表示装置の液晶パネル１の
断面図であり、この液晶パネル１においては、基板２上
に画素トランジスタであるＴＦＴが形成され、その上に
ＩＴＯ膜からなる透明画素電極３が形成されたＴＦＴ基
板４と、基板５上にＩＴＯ膜からなる対向電極６が形成
された対向基板７との間に液晶８が保持された構造を有
している。また、この液晶パネル１においては、対向基
板７側から入射させる光源の光がＴＦＴに入射して光リ
ーク電流が生じることを防止するため、透明画素電極３
の下側（ＴＦＴ側）にＴｉからなる遮光層９が設けられ
ている（特開平８−２６２４９４号公報、特開２０００
−１３１７１６号公報参照）。2. Description of the Related Art In a liquid crystal display device, an ITO (Indium Tin Oxide) film is widely used as a transparent pixel electrode, and this ITO film may be provided on a refractory metal light shielding layer such as a Ti layer. . For example, FIG. 1 is a sectional view of a liquid crystal panel 1 of an active matrix transmission type liquid crystal display device. In the liquid crystal panel 1, a TFT as a pixel transistor is formed on a substrate 2, and an ITO film is formed thereon. A liquid crystal 8 is held between a TFT substrate 4 on which a transparent pixel electrode 3 made of is formed and a counter substrate 7 on which a counter electrode 6 made of an ITO film is formed on a substrate 5. Further, in the liquid crystal panel 1, the transparent pixel electrode 3 is used to prevent light from a light source, which is incident from the counter substrate 7 side, from being incident on the TFT to generate a light leakage current.
The light-shielding layer 9 made of Ti is provided below (the TFT side) (see Japanese Patent Application Laid-Open Nos. 8-262494 and 2000-2000).
-131716).
【０００３】なお、図中、符号Ｇ、Ｓは、それぞれＴＦ
Ｔのゲート、ソースを表し、Ｃｓは補助容量を表してい
る。また、符号１０はゲート酸化膜、符号１１、１２、
１３はそれぞれ層間絶縁膜、符号１４、１５はそれぞれ
引き出し電極を表している。[0003] In the drawings, reference characters G and S denote TF, respectively.
T represents a gate and a source, and Cs represents an auxiliary capacitance. Reference numeral 10 denotes a gate oxide film, and reference numerals 11, 12,
Reference numeral 13 denotes an interlayer insulating film, and reference numerals 14 and 15 denote extraction electrodes.
【０００４】ところで、透明画素電極３として使用する
ＩＴＯ膜の成膜方法は、一般に、スパッタ法で、Ｏ2、
Ａｒ及びＡｒＨ2を含む放電ガスを使用し、ターゲット
に酸化インジウム（In2O3）に酸化スズ（SnO2）を５〜
１０％混ぜたものを使用することにより行われている。
この場合、放電前にガスの安定化時間をとり、その後に
放電し、成膜するという手法がとられている。The method of forming an ITO film used as the transparent pixel electrode 3 is generally a sputtering method using O 2 ,
Using a discharge gas containing Ar and ArH 2 , indium oxide (In 2 O 3 ) was used as a target and tin oxide (SnO 2 ) was used as a target.
This is done by using a 10% mixture.
In this case, a method is employed in which a gas stabilization time is taken before discharging, and thereafter, discharging is performed to form a film.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来の
スパッタ法で、例えば、Ｔｉからなる遮光層９上にＩＴ
Ｏ膜からなる透明画素電極３を形成すると、図２に示す
ように、遮光層９の表面にＴｉ酸化膜２０が形成され、
遮光層９と透明画素電極３とのコンタクト抵抗が増加す
る。一方、遮光層９は、単に光源から射出される光がＴ
ＦＴに入射することを防止するだけでなく、透明画素電
極３と引き出し電極１４を導通させるという機能も有す
る。このため、遮光層９と透明画素電極３とのコンタク
ト抵抗の増加は表示品位を低下させるという問題があっ
た。However, in the conventional sputtering method, for example, the IT is formed on the light shielding layer 9 made of Ti.
When the transparent pixel electrode 3 made of an O film is formed, a Ti oxide film 20 is formed on the surface of the light shielding layer 9 as shown in FIG.
The contact resistance between the light shielding layer 9 and the transparent pixel electrode 3 increases. On the other hand, the light-shielding layer 9 simply emits light
It not only prevents the light from entering the FT, but also has a function of making the transparent pixel electrode 3 and the extraction electrode 14 conductive. For this reason, there is a problem that an increase in the contact resistance between the light-shielding layer 9 and the transparent pixel electrode 3 lowers the display quality.
【０００６】このような問題に対し、本発明は、Ｔｉ層
等の高融点金属遮光層上にＩＴＯ膜をスパッタ法で成膜
する場合において、高融点金属遮光層とＩＴＯ膜とのコ
ンタクト抵抗を低減させることを目的とする。[0006] In order to solve such a problem, the present invention provides a method for forming an ITO film on a refractory metal light-shielding layer such as a Ti layer by sputtering. The purpose is to reduce it.
【０００７】[0007]
【課題を解決するための手段】本発明者は、Ｔｉ層上に
ＩＴＯ膜をスパッタ法で成膜する場合に、常時、放電ガ
ス中にＯ2ガスを含めると、Ｔｉ層の表面にＴｉ酸化物
が形成されるが、Ｏ2ガスの添加タイミングを放電開始
から３秒以降とすること、ＩＴＯ膜上には極めて薄いＩ
Ｔ膜が形成され、それ以降、Ｔｉ層がＯ2ガスに直接的
に晒されなくなるためＴｉ酸化膜の形成を防止でき、こ
れにより安定したコンタクト抵抗を確保できることを見
出した。The inventor of the present invention has proposed that, when an ITO film is formed on a Ti layer by sputtering, if the O 2 gas is always included in the discharge gas, the surface of the Ti layer may be oxidized with Ti oxide. However, the addition timing of the O 2 gas should be 3 seconds or more after the start of the discharge, and the extremely thin I 2
It has been found that since a T film is formed and thereafter the Ti layer is not directly exposed to the O 2 gas, the formation of a Ti oxide film can be prevented and a stable contact resistance can be secured.
【０００８】即ち、本発明は、Ｔｉ層等の高融点金属遮
光層上でＯ2及びＡｒを含む放電ガスを用いてスパッタ
法を行うことにより高融点金属遮光層に接したＩＴＯ膜
を形成する方法であって、放電開始から３秒以降にＯ2
を放電ガスに添加することを特徴とするＩＴＯ膜の形成
方法を提供する。That is, the present invention forms an ITO film in contact with the high-melting point metal light-shielding layer by performing sputtering using a discharge gas containing O 2 and Ar on the high-melting point metal-light-shielding layer such as a Ti layer. a method, to 3 seconds after start of discharge O 2
Is added to a discharge gas.
【０００９】また、本発明は、画素トランジスタとして
ＴＦＴが形成されている基板上にＴｉ層等の高融点金属
遮光層を形成し、画素電極として、前記高融点金属遮光
層に接したＩＴＯ膜を形成することからなるＴＦＴ基板
の製造方法であって、画素電極の形成を、高融点金属遮
光層上でＯ2及びＡｒを含む放電ガスを用いるスパッタ
法で行い、かつ放電ガス中へのＯ2の添加を放電開始か
ら３秒以降とすることを特徴とするＴＦＴ基板の製造方
法を提供する。Further, the present invention provides a method in which a refractory metal light-shielding layer such as a Ti layer is formed on a substrate on which a TFT is formed as a pixel transistor, and an ITO film in contact with the refractory metal light-shielding layer is formed as a pixel electrode. a formed TFT substrate manufacturing method of which comprises, O 2 of the formation of the pixel electrodes is performed by a sputtering method using a discharge gas containing O 2 and Ar in the refractory metal light-shield layer, and the discharge gas A method of manufacturing a TFT substrate, characterized in that the addition of Pb is 3 seconds or more after the start of discharge.
【００１０】さらに、本発明は、画素トランジスタとし
てＴＦＴが形成されている基板上にＴｉ層等の高融点金
属遮光層を形成し、画素電極として、前記Ｔｉ層に接し
たＩＴＯ膜を形成することによりＴＦＴ基板を作製し、
該ＴＦＴ基板と、対向電極が形成されている対向基板と
を対向させて接合し、双方の基板間に液晶を注入するこ
とにより液晶表示装置を製造する方法であって、ＴＦＴ
基板における画素電極の形成を、高融点金属遮光層上で
Ｏ2及びＡｒを含む放電ガスを用いるスパッタ法で行
い、かつ放電ガス中へのＯ2の添加を放電開始から３秒
以降とすることを特徴とする液晶表示装置の製造方法を
提供する。Further, according to the present invention, a refractory metal light-shielding layer such as a Ti layer is formed on a substrate on which a TFT is formed as a pixel transistor, and an ITO film in contact with the Ti layer is formed as a pixel electrode. To produce a TFT substrate,
A method of manufacturing a liquid crystal display device by bonding the TFT substrate and a counter substrate on which a counter electrode is formed to face each other, and injecting a liquid crystal between the two substrates.
The pixel electrode on the substrate is formed on the refractory metal light-shielding layer by a sputtering method using a discharge gas containing O 2 and Ar, and the addition of O 2 into the discharge gas is made after 3 seconds from the start of discharge. And a method of manufacturing a liquid crystal display device characterized by the following.
【００１１】[0011]
【発明の実施の形態】本発明のＩＴＯ膜の形成方法は、
Ｔｉ層等の高融点金属遮光層上でＯ2及びＡｒを含む放
電ガスを用いてスパッタ法を行うにあたり、放電開始か
ら３秒以降にＯ2を放電ガスに添加することを特徴とす
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The method of forming an ITO film according to the present invention is as follows.
In performing a sputtering method using a discharge gas containing O 2 and Ar on a refractory metal light-shielding layer such as a Ti layer, O 2 is added to the discharge gas after 3 seconds from the start of discharge.
【００１２】このＩＴＯ膜の形成方法は、Ｏ2ガスの添
加タイミングを放電開始から３秒以降とする以外、ＴＦ
Ｔ基板の透明画素電極用のＩＴＯ膜をスパッタ法で形成
する場合の公知の方法と同様とすることができる。好ま
しくは、Ｔｉ層等の高融点金属遮光層が形成されている
基板を無加熱で、スパッタ圧を０．８Ｐａとし、放電開
始前及び放電開始当初の雰囲気をＡｒとＡｒＨ2の混合
ガスとする。The method of forming the ITO film is similar to that of the TF except that the timing of adding the O 2 gas is 3 seconds or more after the start of the discharge.
The method can be the same as a known method for forming an ITO film for a transparent pixel electrode on a T substrate by a sputtering method. Preferably, the substrate on which the high-melting point metal light-shielding layer such as a Ti layer is formed is heated without heating, the sputtering pressure is set to 0.8 Pa, and the atmosphere before and at the beginning of the discharge is a mixed gas of Ar and ArH 2. .
【００１３】また、ターゲットとしては、酸化インジウ
ム（In2O3）に酸化スズ（SnO2）を５〜１０％混ぜたも
のを使用することができ、好ましくは酸化インジウム
（In2O 3）に酸化スズ（SnO2）を５％混ぜたものを使用
する。As a target, indium oxide is used.
(InTwoOThree) To tin oxide (SnO)Two5) to 10%
Can be used, preferably indium oxide
(InTwoO Three) To tin oxide (SnO)TwoUse 5%)
I do.
【００１４】放電ガスへのＯ2の添加は、放電開始から
３秒以降とするが、好ましくは放電開始から３秒以降ス
パッタ終了までとする。放電ガスへのＯ2の添加タイミ
ングが放電開始から３秒未満であると、Ｔｉ層等の高融
点金属遮光層とＩＴＯ膜とのコンタクト抵抗が高くな
り、反対に添加タイミングが過度に遅れるとＩＴＯ膜の
透過率が低下するので好ましくない。またこの場合、Ｏ
2の添加量は、Ａｒの３．０〜３．５％とすることが好
ましい。The addition of O 2 to the discharge gas is made 3 seconds or more after the start of the discharge, and preferably 3 seconds or more after the start of the discharge and until the end of the sputtering. If the timing of adding O 2 to the discharge gas is less than 3 seconds from the start of the discharge, the contact resistance between the refractory metal light-shielding layer such as the Ti layer and the ITO film becomes high. It is not preferable because the transmittance of the membrane decreases. In this case, O
The addition amount of 2 is preferably set to 3.0 to 3.5% of Ar.
【００１５】本発明の方法により高融点金属遮光層上に
ＩＴＯ膜を形成すると、放電開始後Ｏ2を添加する前の
間に、高融点金属遮光層上には厚さ５〜６ｎｍの薄いＩ
Ｔ膜が形成される。次に、放電開始後３秒以降に放電ガ
スにＯ2を添加すると、高融点金属遮光層表面がＩＴ膜
で覆われているので、Ｔｉ酸化膜等の酸化膜が形成され
ることなく、ＩＴ膜上にＩＴＯ膜のみが形成される。[0015] forming an ITO film on the refractory metal light-shield layer by the method of the present invention, while prior to the addition of the firing after the O 2, a thin thickness 5~6nm the refractory metal light-shield layer I
A T film is formed. Next, when O 2 is added to the discharge gas 3 seconds or more after the start of the discharge, the surface of the refractory metal light-shielding layer is covered with the IT film, so that an oxide film such as a Ti oxide film is not formed. Only an ITO film is formed on the film.
【００１６】したがって、本発明のＩＴＯ膜の形成方法
は、図１に示したように、ＴＦＴ上のＴｉ層からなる遮
光層９上にＩＴＯ膜からなる透明画素電極３を形成する
場合、あるいはＴｉ層に代えてＣｒ層等の高融点金属か
らなる遮光層を形成する場合のＩＴＯ膜の形成方法とし
て特に有用なものとなる。Therefore, the method of forming an ITO film according to the present invention is, as shown in FIG. 1, when the transparent pixel electrode 3 made of the ITO film is formed on the light shielding layer 9 made of the Ti layer on the TFT, This is particularly useful as a method for forming an ITO film when a light-shielding layer made of a high melting point metal such as a Cr layer is formed instead of a layer.
【００１７】本発明のＴＦＴ基板の製造方法は、基板上
に画素トランジスタとしてＴＦＴが形成されているＴＦ
Ｔ基板の作製工程において、上述の本発明のＩＴＯ膜の
形成方法を行うものである。また、本発明の液晶表示装
置の製造方法は、本発明の方法によりＴＦＴ基板を作製
し、得られたＴＦＴ基板を用いて液晶表示装置を製造す
る方法である。According to the method of manufacturing a TFT substrate of the present invention, a TFT having a TFT formed as a pixel transistor on a substrate is provided.
In the manufacturing process of the T substrate, the above-described method of forming an ITO film of the present invention is performed. Further, the method of manufacturing a liquid crystal display device of the present invention is a method of manufacturing a TFT substrate by the method of the present invention and manufacturing a liquid crystal display device using the obtained TFT substrate.
【００１８】このＴＦＴ基板の製造方法あるいは液晶表
示装置の方法は、ボトムゲート型かトップゲート型か等
のＴＦＴの構造、使用する液晶の種類、反射型か透過型
か等の液晶パネルの種類などによらず、Ｔｉ層等の高融
点金属遮光層に接してＩＴＯ膜が形成されている構造を
有する限り、広く適用することができる。The method of manufacturing the TFT substrate or the method of the liquid crystal display device includes a TFT structure such as a bottom gate type or a top gate type, a type of liquid crystal to be used, and a type of liquid crystal panel such as a reflection type or a transmission type. Regardless, the present invention can be widely applied as long as it has a structure in which an ITO film is formed in contact with a refractory metal light-shielding layer such as a Ti layer.
【００１９】[0019]
【発明の効果】本発明のＩＴＯ膜の形成方法によれば、
Ｔｉ層等の高融点金属遮光層とＩＴＯ膜のコンタクト抵
抗を、従来のスパッタ法に比べて低く安定させることが
できる。したがって、例えばＴＦＴ上に遮光層としてＴ
ｉ層を有し、そのＴｉ層に接してＩＴＯ膜からなる画素
電極を設けるＴＦＴ基板、あるいはそのようなＴＦＴ基
板を用いた液晶表示装置について、ユニフォーミティー
不良や液晶の配向不良、あるいはこれらの複合不良を抑
制することが可能となり、また、製品の歩留まりを向上
させることができる。According to the method for forming an ITO film of the present invention,
The contact resistance between the refractory metal light-shielding layer such as a Ti layer and the ITO film can be made lower and stable as compared with the conventional sputtering method. Therefore, for example, T
For a TFT substrate having an i-layer and providing a pixel electrode made of an ITO film in contact with the Ti layer, or a liquid crystal display device using such a TFT substrate, a uniformity defect, a poor liquid crystal alignment, or a combination thereof. Defects can be suppressed, and the yield of products can be improved.
【図１】 液晶パネルの断面図である。FIG. 1 is a cross-sectional view of a liquid crystal panel.
【図２】 従来法で遮光層上に透明導電膜を成膜した場
合の、遮光層と透明導電膜とのコンタクト部分の部分拡
大図である。FIG. 2 is a partially enlarged view of a contact portion between a light shielding layer and a transparent conductive film when a transparent conductive film is formed on the light shielding layer by a conventional method.
１…液晶パネル、 ２…基板、 ３…透明画素電極、
４…ＴＦＴ基板、 ５…基板、 ６…対向電極、 ７…
対向基板、 ８…液晶、 ９…遮光層、 １０…ゲート
酸化膜、 １１…層間絶縁膜、 １２…層間絶縁膜、
１３…層間絶縁膜、 １４…引き出し電極、 １５…引
き出し電極、 ２０…遮光層の表面のＴｉ酸化膜1: liquid crystal panel, 2: substrate, 3: transparent pixel electrode,
4: TFT substrate, 5: substrate, 6: counter electrode, 7:
Counter substrate, 8: liquid crystal, 9: light shielding layer, 10: gate oxide film, 11: interlayer insulating film, 12: interlayer insulating film,
13: interlayer insulating film, 14: lead electrode, 15: lead electrode, 20: Ti oxide film on the surface of the light shielding layer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｇ０９Ｆ 9/35 Ｇ０９Ｆ 9/35 ５Ｇ４３５ Ｈ０１Ｌ 21/28 ３０１ Ｈ０１Ｌ 21/28 ３０１Ｚ 21/285 21/285 Ｓ 29/786 Ｇ０２Ｆ 1/1368 // Ｇ０２Ｆ 1/1368 Ｈ０１Ｌ 29/78 ６１２Ｃ Ｆターム(参考） 2H092 HA04 HA05 JA25 JA29 JA42 JA44 JA46 JB07 JB13 JB38 JB51 JB58 JB63 JB69 4K029 BA17 BA45 BC09 CA06 EA05 4M104 BB14 BB36 DD37 HH15 5C094 AA42 AA60 BA03 BA43 CA19 DA13 EA04 EA05 FB02 FB05 GB01 JA20 5F110 AA03 BB01 BB02 CC01 HL04 HL07 HM18 NN03 NN44 NN46 NN72 NN73 5G435 AA17 BB12 BB15 BB16 CC09 FF13 HH12 HH14 KK05 KK10──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) G09F 9/35 G09F 9/35 5G435 H01L 21/28 301 H01L 21/28 301Z 21/285 21/285 S 29 / 786 G02F 1/1368 // G02F 1/1368 H01L 29/78 612C F-term (reference) 2H092 HA04 HA05 JA25 JA29 JA42 JA44 JA46 JB07 JB13 JB38 JB51 JB58 JB63 JB69 4K029 BA17 BA45 BC09 CA06 EA05 4M104 BB14H BB36A37H AA60 BA03 BA43 CA19 DA13 EA04 EA05 FB02 FB05 GB01 JA20 5F110 AA03 BB01 BB02 CC01 HL04 HL07 HM18 NN03 NN44 NN46 NN72 NN73 5G435 AA17 BB12 BB15 BB16 CC09 FF13 HH12 HH14 KK05 KK10
Claims (6)
む放電ガスを用いてスパッタ法を行うことにより高融点
金属遮光層に接したＩＴＯ膜を形成する方法であって、
放電開始から３秒以降にＯ2を放電ガスに添加すること
を特徴とするＩＴＯ膜の形成方法。1. A method for forming an ITO film in contact with a refractory metal light-shielding layer by performing a sputtering method on the refractory metal light-shielding layer using a discharge gas containing O 2 and Ar,
Method of forming an ITO film, which comprises adding O 2 to 3 seconds after start of discharge in the discharge gas.
１記載のＩＴＯ膜の形成方法。2. The method according to claim 1, wherein the refractory metal light shielding layer is a Ti layer.
れている基板上に高融点金属遮光層を形成し、画素電極
として、前記高融点金属遮光層に接したＩＴＯ膜を形成
することからなるＴＦＴ基板の製造方法であって、画素
電極の形成を、高融点金属遮光層上でＯ2及びＡｒを含
む放電ガスを用いるスパッタ法で行い、かつ放電ガス中
へのＯ2の添加を放電開始から３秒以降とすることを特
徴とするＴＦＴ基板の製造方法。3. A TFT substrate comprising: forming a refractory metal light-shielding layer on a substrate on which a TFT is formed as a pixel transistor; and forming an ITO film in contact with the refractory metal light-shielding layer as a pixel electrode. In a manufacturing method, a pixel electrode is formed by a sputtering method using a discharge gas containing O 2 and Ar on a refractory metal light-shielding layer, and addition of O 2 into the discharge gas is performed for 3 seconds from the start of discharge. A method for manufacturing a TFT substrate, comprising:
る請求項３記載のＴＦＴ基板の製造方法。4. The method for manufacturing a TFT substrate according to claim 3, wherein a Ti layer is formed as the refractory metal light shielding layer.
れている基板上に高融点金属遮光層を形成し、画素電極
として、前記高融点金属遮光層に接したＩＴＯ膜を形成
することによりＴＦＴ基板を作製し、該ＴＦＴ基板と、
対向電極が形成されている対向基板とを対向させて接合
し、双方の基板間に液晶を注入することにより液晶表示
装置を製造する方法であって、ＴＦＴ基板における画素
電極の形成を、高融点金属遮光層上でＯ2及びＡｒを含
む放電ガスを用いるスパッタ法で行い、かつ放電ガス中
へのＯ2の添加を放電開始から３秒以降とすることを特
徴とする液晶表示装置の製造方法。5. A TFT substrate is formed by forming a refractory metal light-shielding layer on a substrate on which a TFT is formed as a pixel transistor, and forming an ITO film in contact with the refractory metal light-shielding layer as a pixel electrode. And the TFT substrate
This is a method for manufacturing a liquid crystal display device by joining a facing substrate on which a facing electrode is formed, and injecting a liquid crystal between the two substrates. A method for manufacturing a liquid crystal display device, comprising: performing a sputtering method using a discharge gas containing O 2 and Ar on a metal light-shielding layer; and adding O 2 to the discharge gas after 3 seconds from the start of discharge. .
る請求項５記載の液晶表示装置の製造方法。6. The method according to claim 5, wherein a Ti layer is formed as the refractory metal light-shielding layer.
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|---|---|---|---|
| JP2000-376509 | 2000-12-11 | ||
| JP2000376509 | 2000-12-11 | ||
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| JP2004287446A (en) * | 2003-03-24 | 2004-10-14 | Samsung Electronics Co Ltd | Multiple domain liquid crystal display device and its thin film transistor substrate |
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-
2001
- 2001-12-10 JP JP2001376298A patent/JP2002319321A/en active Pending
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