JP5104274B2 - Light emitting device - Google Patents

Description

  The present invention relates to a light emitting device using a light emitting element such as an organic EL (Electroluminescence) element.

There is known a light emitting device in which a plurality of light emitting elements are arranged in an effective area on a substrate, and various wirings are arranged in a peripheral area surrounding the effective area. Each light emitting element has a light emitting layer sandwiched between a first electrode and a second electrode and formed of a light emitting material such as an organic EL material. In many cases, the second electrode is a common electrode provided in common to the plurality of light emitting elements, and is provided over the entire effective region. However, a voltage drop occurs in the surface of the electrode due to the resistance of the electrode itself, and the potential supplied to the light-emitting element varies depending on the position on the substrate, and the luminance of the light-emitting element may vary depending on the position. Therefore, conventionally, an auxiliary electrode formed of a material having a resistance lower than that of the common electrode and electrically connected to the common electrode is provided to reduce the resistance of the common electrode (for example, Patent Document 1).
JP 2002-352963 A

  By the way, the auxiliary electrode is often formed of a light-shielding member such as aluminum. For this reason, it is desirable that the light emitting element is formed so as to pass through a gap region of the light emitting element so as not to block light emitted from the light emitting element, and it is desirable that the light emitting element be formed using a highly accurate alignment mechanism. On the other hand, the common electrode is made of a light transmissive material and is uniformly formed in a region covering the entire effective region. Therefore, an error in alignment can be allowed as compared with the auxiliary electrode. Therefore, the alignment error of the common cathode becomes more problematic than the auxiliary electrode. Therefore, it is desirable to secure a sufficient width of the peripheral region (so-called “frame region”) on the substrate so as to be able to absorb the error of the common electrode, which hinders downsizing of the device.

A circuit element such as a transistor for controlling light emission of the light emitting element is disposed below the common electrode and the auxiliary electrode. For this reason, an insulating layer is provided between the common electrode and the auxiliary electrode to insulate the common electrode and the auxiliary electrode from the circuit elements. However, when the insulating layer includes a step, the electrode may be broken or cracked in the upper layer portion overlapping the step. Since the resistance value of the electrode increases at the location where the disconnection or crack occurs, the luminance unevenness of the light emitting element becomes remarkable.
The present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide a light-emitting device capable of reducing the frame area of the light-emitting device and suppressing luminance unevenness of the light-emitting element.

  In order to solve the above problem, a first light emitting device of the present invention has an effective region in which a plurality of light emitting elements are arranged on a substrate and a peripheral region surrounding the effective region, and each of the light emitting elements is a first light emitting device. An electrode, a second electrode, and a light emitting layer between the electrodes, the second electrode is provided in common to the plurality of light emitting elements, and a circuit element for controlling light emission of the light emitting elements is disposed A light emitting device having an element layer, wherein the auxiliary electrode is electrically connected to the second electrode, and is disposed in an upper layer of the element layer, and is disposed in a lower layer than the second electrode and the auxiliary electrode. And an insulating layer for insulating the second electrode and the auxiliary electrode from the circuit element. The second electrode covers the effective region and protrudes uniformly from the peripheral region. The auxiliary electrode is formed in the effective area. The plurality of light-emitting elements are formed in a part of the peripheral region through gaps between the light emitting elements, and in the peripheral region, the end of the second electrode is the end of the auxiliary electrode and the end of the insulating layer in the plane of the substrate. It is located inside each of the above.

  In the light emitting device of the present invention, the end of the auxiliary electrode is disposed outside the end of the common electrode. Further, the auxiliary electrode is formed so as to pass through the region of the gap between the light emitting elements in the effective region. For this reason, it is desirable to form using a highly accurate alignment mechanism. On the other hand, since the common electrode is uniformly formed in a region covering the entire effective region, alignment accuracy is not required as much as the auxiliary electrode when forming the common electrode. That is, the auxiliary electrode is often formed with a smaller error than the common electrode. Therefore, according to the present invention, the frame region can be reduced in accordance with the error of the auxiliary electrode, compared with the configuration in which the end of the common electrode is arranged outside the end of the auxiliary cathode, and the apparatus can be downsized. It becomes possible. The auxiliary electrode is configured to have a lower resistance than the second electrode. In particular, the auxiliary electrode is preferably formed of a material having a lower resistance than the second electrode.

  Furthermore, in the light-emitting device of the present invention, the end of the common electrode is disposed inside the end of the insulating layer. The insulating layer is, for example, a circuit step flattening film, and is often formed thick in order to flatten the underlying unevenness. Therefore, the end of the insulating layer becomes a large step. On the other hand, since the common electrode is often formed of a fragile material or thinly formed, the common electrode may be disconnected or cracked due to the step difference at the end of the insulating layer. However, in the present invention, since the end of the common electrode is disposed inside the end of the insulating layer, disconnection and cracks in the common electrode are prevented. Therefore, it is possible to prevent an increase in resistance value due to disconnection or cracking. Accordingly, luminance unevenness of the light emitting element can be suppressed. In a preferred aspect of the present invention, it is preferable that the second electrode is disposed below the auxiliary electrode. According to this aspect, the second electrode can be protected from the outside air.

  In addition, the second light emitting device of the present invention is a light emitting device having an effective region in which a plurality of light emitting elements are arranged on a substrate and a peripheral region surrounding the effective region, and each of the plurality of light emitting elements. A plurality of first electrodes provided corresponding to the plurality of light emitting elements, a second electrode provided in common to the plurality of light emitting elements, and a light emitting layer interposed between the plurality of first electrodes and the second electrode, An auxiliary electrode electrically connected to the second electrode, an element layer in which a circuit element for controlling light emission of the light emitting element is disposed, and between the second electrode or the auxiliary wiring and the element layer And the second electrode is provided in a first region including the entire effective region and at least a part of the peripheral region, and the insulating layer is provided in the entire effective region. Overlaps the first region and the first region in the peripheral region. The auxiliary electrode is provided so as to pass through the gaps of the plurality of light emitting elements in the effective region, and is provided in the second region protruding in the first direction from the region of In the peripheral region, the peripheral region is provided so as to pass through the inside of the first region and the outside of the first region and the inside of the second region to reach the outside of the second region. Yes.

  In the second light emitting device, the auxiliary electrode is also provided in a region outside the first region where the common electrode is provided. Therefore, the end of the auxiliary electrode is disposed outside the end of the common electrode. Further, since the auxiliary electrode is formed so as to pass through the gap region of the light emitting element in the effective region, a highly accurate alignment mechanism is used for forming the auxiliary electrode. On the other hand, since the common electrode is uniformly formed in a region covering the entire effective region, alignment accuracy is not required as much as the auxiliary electrode when forming the common electrode. Therefore, since the error of the auxiliary electrode is smaller than that of the common electrode, according to the present invention, the frame region is set according to the error of the auxiliary electrode as compared with the configuration in which the end of the common electrode is arranged outside the end of the auxiliary cathode. The size of the apparatus can be reduced.

  Furthermore, in the second light emitting device, the first region in which the common electrode is provided is disposed inside the second region in which the insulating layer is provided. Therefore, in the portion where the end of the insulating layer and the common electrode overlap, an increase in resistance value due to disconnection or crack in the common electrode can be prevented in advance. Accordingly, luminance unevenness of the light emitting element can be suppressed.

  In a preferred aspect of the second light emitting device, the plurality of light emitting elements are arranged in a matrix, and the auxiliary electrode passes through the gap between the plurality of light emitting elements and from the inside of the effective region. A plurality of individual electrodes are provided in stripes along the first direction so as to reach the outside. Preferably, the auxiliary electrode may further include a connection electrode that connects the plurality of individual electrodes to each other in the peripheral region. In this case, the connection electrode may be arranged such that an end of the insulating layer in the first direction overlaps the connection electrode.

  In another preferable aspect of the second light-emitting device, the plurality of light-emitting elements are arranged in a matrix, and the auxiliary electrode passes through the gap between the plurality of light-emitting elements and is in the effective region. A plurality of individual electrodes provided in stripes along the first direction from the inside to the outside of the second region;

Further, in any one of the above-described aspects of the second light emitting device, a second electrode power supply line for supplying a potential to the second electrode is provided in the peripheral region so as to intersect the first direction. The second electrode power line is electrically connected to the auxiliary electrode. In this case, preferably, the second electrode power line may be provided outside the first region.
Furthermore, this invention is grasped | ascertained also as an electronic device which has the 1st or 2nd light-emitting device of the said aspect. According to this electronic device, any of the above-described effects can be achieved.

Embodiments according to the present invention will be described below with reference to the accompanying drawings. In the drawings, the ratio of dimensions of each part is appropriately changed from the actual one.
<A-1: First Embodiment>
FIG. 1A is a schematic plan view showing a part of the configuration of the light emitting device 1 according to the first embodiment of the present invention, and FIG. 1B is the auxiliary electrode 150 after the state of FIG. FIG. 6 is a plan view showing a state where a pixel electrode 76 is further formed. As shown in FIG. 1A, the light emitting device 1 includes a substrate 10 and a flexible substrate 20. A connection terminal is formed at the end of the substrate 10, and the connection terminal and the connection terminal formed on the flexible substrate 20 are in a film shape containing conductive particles called ACF (anisotropic conductive film). Crimped and fixed via an adhesive. The flexible substrate 20 is provided with a data line driving circuit 200, and various power supply voltages are supplied to the substrate 10 through the flexible substrate 20.

  The substrate 10 is provided with an effective region A and a peripheral region B outside thereof (that is, between the substrate or the outer periphery of the substrate 10 and the effective region A). In the peripheral region B, scanning line drive circuits 100A and 100B and a precharge circuit 120 are formed. The precharge circuit 120 is a circuit for setting the potential of the data line 112 to a predetermined potential prior to the write operation. The scanning line driving circuits 100A and 100B and the precharge circuit 120 are peripheral circuits around the effective area A. However, the peripheral circuit may include a unit circuit P and an inspection circuit (not shown) for inspecting the quality of the wiring, or may be a peripheral circuit in which the data line driving circuit 200 is provided in the peripheral region B.

  In the effective area A, a plurality of scanning lines 111 and a plurality of data lines 112 are formed, and a plurality of unit circuits (pixel circuits) P are provided in the vicinity of each of the intersections. The unit circuit P includes an OLED (organic light emitting diode) element and receives power from the current supply line 113. The plurality of current supply lines 113 are connected to the first electrode power line 130.

  FIG. 2 is a circuit diagram illustrating details of the unit circuit P of the light emitting device 1. Each unit circuit P includes an n-channel transistor 68, a p-channel transistor 60, a capacitor element 69, and a light emitting element (OLED element) 70. The source electrode of the p-channel transistor 60 is connected to the current supply line 113, while the drain electrode is connected to the anode of the light emitting element 70. Further, a capacitor 69 is provided between the source electrode and the gate electrode of the transistor 60. The gate electrode of the n-channel transistor 68 is connected to the scanning line 111, the source electrode is connected to the data line 112, and the drain electrode is connected to the gate electrode of the transistor 60.

  In the unit circuit P, when the scanning line driving circuits 100A and 100B select the scanning line 111 corresponding to the unit circuit P, the transistor 68 is turned on, and the data signal supplied via the data line 112 is transferred to the internal capacitive element. 69. The transistor 60 supplies a current corresponding to the level of the data signal to the light emitting element 70. As a result, the light emitting element 70 emits light with luminance according to the level of the data signal.

  Further, as shown in FIG. 1A, a U-shaped second electrode power line 140 is formed on the outer peripheral side of the peripheral region B (that is, between the outer periphery of the substrate or the substrate 10 and the peripheral region B). Is formed. The second electrode power supply line 140 is a wiring for supplying a power supply voltage (in this example, Vss: ground level) to the cathode (second electrode) of the light emitting element as will be described later. Instead of arranging the second electrode power line 140 in a U shape (that is, along the three sides of the substrate 10), the second electrode power line 140 may be provided along the two opposite sides of the substrate 10. In other words, in the example shown in the figure, the scanning line driving circuits 100A and 100B may be provided.

  The light emitting element 70 has a light emitting functional layer (including a light emitting layer) 74 sandwiched between a pixel electrode 76 (anode) and a common electrode 72 (cathode) (see FIG. 4). As shown in FIG. 1B, the common electrode 72 is formed in a region (first region) that extends over the entire effective region A and a part of the peripheral region B. In addition, an auxiliary electrode 150 that connects the common electrode 72 and the second electrode power line 140 is formed in the peripheral region B so as to cover the peripheral circuit. The auxiliary electrode 150 includes a first portion 150 a of the auxiliary electrode provided in the effective region A and a second portion 150 b of the auxiliary electrode provided in the peripheral region B. In the effective region A, the first portion 150a of the auxiliary electrode 150 is formed in a lattice shape so that the first portion 150a of the auxiliary electrode 150 and the pixel electrode 76 do not contact each other. That is, the first portion 150 a of the auxiliary electrode 150 is disposed in the gap between the light emitting elements 70. The auxiliary electrode in this specification is a conductor that overlaps and is electrically connected to the common electrode 72 and reduces the resistance of the common electrode 72. For the sake of clarity, FIG. 3 shows an enlarged part of FIG.

  The light emitting device 1 of this embodiment is configured in the form of top emission, and light from the light emitting functional layer 74 is emitted through the common electrode 72. The common electrode 72 is made of a transparent material. For this reason, the peripheral region B cannot be shielded by the common electrode 72. On the other hand, the auxiliary electrode 150 described above is made of a metal having conductivity and light shielding properties, and therefore can be shielded by the auxiliary electrode 150. Thereby, it can suppress that light injects into a peripheral circuit and a photocurrent generate | occur | produces. Further, the auxiliary electrode 150 can be formed in the same process as the pixel electrode 76 in the effective area A. Therefore, no special process is required to add light shielding properties to the peripheral region B.

  FIG. 4 shows a partial cross-sectional view of the light emitting device 1. In the figure, a light emitting element 70 is formed in the effective area A, while a scanning line driving circuit 100A as a peripheral circuit is formed in the peripheral area B. In the figure, the upper surface of the light emitting device 1 is an emission surface from which light is emitted. As shown in the figure, a base protective layer 31 is formed on a substrate 10, and transistors 40, 50, and 60 are formed thereon. Transistor 40 is an n-channel type, and transistors 50 and 60 are p-channel type. The transistors 40 and 50 are part of the scanning line driving circuit 100A, and the transistor 60 and the light emitting element 70 are part of the unit circuit P.

  The transistors 40, 50, and 60 are provided on the base protective layer 31 mainly composed of silicon oxide formed on the surface of the substrate 10. Silicon layers 401, 501 and 601 are formed on the base protective layer 31. A gate insulating layer 32 is provided on the base protective layer 31 so as to cover the silicon layers 401, 501 and 601. The gate insulating layer 32 is made of, for example, silicon oxide. Gate electrodes 42, 52 and 62 are provided on portions of the upper surface of the gate insulating layer 32 facing the silicon layers 401, 501 and 601. In the transistor 40, the silicon layer 401 is doped with the group V element through the gate electrode 42, and the drain region 40c and the source region 40a are formed. Here, the region not doped with the group V element is the channel region 40b.

  In transistors 50 and 60, silicon layers 501 and 601 are doped with group III elements through gate electrodes 52 and 62 through gate electrodes 52 and 62, and drain regions 50a and 60a and source regions 50c and 60c are formed. The Here, regions where the group III element is not doped become channel regions 50b and 60b. Note that the scanning line 111 is formed simultaneously with the formation of the gate electrodes 42, 52, and 62 of the transistors 40, 50, and 60.

  A first interlayer insulating layer 33 is formed on the gate insulating layer 32 so as to cover the gate electrodes 42, 52 and 62. Silicon oxide or the like is used as a material for the first interlayer insulating layer 33. Furthermore, the silicon layers 401, 501, and the source electrodes 41, 51, and 63, the drain / source electrode 43, and the drain electrode 61 through the contact holes that open through the gate insulating layer 32 and the first interlayer insulating layer 33, and 601 is connected. Further, the second electrode power line 140, the data line 112, and the current supply line 113 are formed in the same process as these electrodes. These electrodes, the second electrode power line 140 and the like are formed of a material such as conductive aluminum.

  The circuit protective film 34 is provided on the first interlayer insulating layer 33 so as to cover the source electrodes 41, 51, and 63, the drain / source electrode 43, the drain electrode 61, and the second electrode power line 140. The circuit protective film 34 is formed of a material having a low gas permeability such as silicon nitride or silicon oxynitride. These silicon nitride and silicon oxynitride may be an amorphous material or may contain hydrogen. The circuit protective film 34 can prevent hydrogen from being removed from the transistors 40, 50, and 60. Note that the circuit protective film 34 may be formed under the source electrode or the drain electrode.

  A second interlayer insulating film 35 is provided on the circuit protection film 34. Here, the second interlayer insulating film includes the source electrodes 41, 51 and 63, the drain / source electrode 43, the drain electrode 61, the second electrode power line 140, the pixel electrode 76, the auxiliary electrode 150, or It is provided between the common electrodes 72 and serves to insulate them. At this time, the film thickness is set so that signals supplied to the scanning lines and signal lines are not delayed. The second interlayer insulating film 35 preferably has an unevenness on the upper surface opposite to the circuit protective film 34 smaller than the unevenness on the lower surface facing the circuit protective film 34. In other words, the second interlayer insulating film 35 is used to planarize unevenness caused by the transistors 40, 50, 60, the scanning line 111, the data line 112, the current supply line 113, and the like. The second interlayer insulating film 35 overlaps the above-described first region (region where the common electrode 72 is formed) in the entire effective region A, and protrudes in the first direction in the peripheral region B from the first region. Provided in the second region. Specifically, in the present embodiment, the second region is the first region on at least three sides of the left and right sides and the upper side of the four sides of the substrate 10 where the second electrode power line 140 is disposed. It protrudes outward in the plane of the substrate 10.

  As the material of the second interlayer insulating film 35, for example, an acrylic or polyimide organic polymer material is used. In this case, a photosensitive material for patterning may be mixed in an organic resin and patterned by exposure in the same manner as in the photoresist. Alternatively, the second interlayer insulating film 35 may be formed from an inorganic material such as silicon oxide or silicon oxynitride by chemical vapor deposition (CVD), and the upper surface thereof may be planarized by etching or the like. When an inorganic material is formed by a chemical vapor deposition method, the film thickness is 1 μm or less and is almost uniform, so the upper surface is easily affected by the unevenness of the lower layer, while the organic resin is coated. Thus, the film thickness can be increased to about 2 to 3 μm, and the upper surface thereof is hardly affected by the unevenness of the lower layer, so that it is suitable for the material of the second interlayer insulating film 35. However, an inorganic material such as silicon oxide or silicon oxynitride can be used for the second interlayer insulating film 35 as long as a certain degree of unevenness is allowed. As described above, since the second interlayer insulating film needs to have a predetermined thickness as described above, a step may be generated in the peripheral region.

  On the second interlayer insulating film 35, the pixel electrode 76 (first electrode) and the first portion 150 a of the auxiliary electrode are formed in the effective region A, and at the same time, the second portion 150 b of the auxiliary electrode is formed in the peripheral region B. That is, the pixel electrode 76 and the auxiliary electrode 150 are simultaneously formed in the same layer using the same material. The pixel electrode 76 in this embodiment is an anode of the light emitting element 70, and is formed so as to be spaced apart from each other for each light emitting element 70, and the transistor is connected through a contact hole that penetrates the second interlayer insulating film 35 and the circuit protection film 34. 60 drain electrodes 61 are connected. The material of the pixel electrode 76 that is an anode is preferably a material having a high work function, and for example, nickel, gold, platinum, or an alloy thereof is preferable. Since these materials have reflectivity, the light emitted from the light emitting functional layer 74 is reflected toward the common electrode 72. In this case, the auxiliary electrode 150 is also formed from these materials.

The pixel electrode 76 includes a first layer having light transmissivity and conductivity made of an oxide conductive material such as ITO (indium tin oxide), IZO (indium zinc oxide), or ZnO ₂ having a high work function. The second layer made of a reflective metal such as aluminum may be included, and the first layer may be provided on the light emitting functional layer side. In this case, the auxiliary electrode 150 may have both the first layer and the second layer, or may have one of these layers.

    The auxiliary electrode 150 is formed in a lattice shape so as to pass through the gaps between the plurality of light emitting elements 70 in the effective region A (first portion 150a), and the second region in which the second interlayer insulating film 35 is formed in the peripheral region. However, on the side that protrudes from the first region where the common electrode 72 is formed (in this embodiment, both the left and right sides and the upper side), the inner side of the first region and the outer side of the first region are In addition, the second region 150b is formed so as to pass through a region that is inside the second region and reach the outside of the second region (second portion 150b). In the peripheral region B, the auxiliary electrode 150 is connected to the second electrode power line 140 through a contact hole formed in the circuit protection film 34. As shown in the drawing, the second interlayer insulating film 35 is not formed on the second electrode power supply line 140, and the second portion 150b of the auxiliary electrode 150 is formed by simply forming a contact hole in the circuit protective film 34. Direct contact with the two-electrode power line 140 is possible.

  Next, the partition wall 37 is formed. The partition wall 37 is formed so that the outer edge of each pixel electrode 76 is covered with the partition wall 37, thereby having an opening 37 a. Therefore, each of the openings 37a entirely overlaps with the pixel electrode 76, and the pixel electrode 76 is exposed through the opening 37a before the light emitting functional layer 74 is formed. The partition 37 insulates between the pixel electrode 76 and the common electrode 72 (second electrode) formed thereafter, or between the plurality of pixel electrodes 76. By providing the partition wall 37, each pixel electrode 76 can be controlled independently, and each of the plurality of light emitting elements can emit light with a predetermined luminance. That is, the partition wall 37 partitions a plurality of light emitting elements. For example, acrylic or polyimide is an insulating material for the partition 37. In this case, a photosensitive material may be mixed for patterning and patterned by exposure in the same manner as the photoresist. A contact hole CH is formed in the partition wall 37 at the same time. In the effective region A, the first portion 150a of the auxiliary electrode 150 and the common electrode 72 described later are connected through the contact hole CH. Further, the same layer as the partition wall 37 is not provided on the second portion 150 b of the auxiliary electrode 150 in the peripheral region B.

  Next, a light emitting functional layer 74 including at least a light emitting layer is formed on the pixel electrode 76. An organic EL material is used for the light emitting layer. The organic EL material may be a low molecular material or a high molecular material. As another layer constituting the light emitting functional layer 74, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole block layer, and a part or all of the electron block layer may be provided. .

  Next, the common electrode 72 (second electrode) is formed so as to cover the auxiliary electrode 150 and the light emitting functional layer 74 over the effective region A and the peripheral region B. The common electrode 72 is translucent, and light from the light emitting element 70 passes through the common electrode 72 and is emitted in the upper direction in the drawing. In order for the common electrode 72 of this embodiment to function as the cathode of all the light emitting elements 70, the common electrode 72 is formed of a material having a low work function so that electrons can be easily injected. For example, aluminum, calcium, magnesium, lithium or the like or an alloy thereof. In addition, it is desirable that this alloy uses a material having a low work function and a material capable of stabilizing the material. For example, an alloy of magnesium and silver is suitable. When these metals or alloys are used for the common electrode 72, the thickness may be reduced in order to obtain translucency.

The common electrode 72 (second electrode) includes a material having a low work function, or a first layer made of a material having a low work function and a material that stabilizes the material, ITO (indium tin oxide), Even if the first layer is provided on the light emitting functional layer side including a light transmissive and conductive second layer made of an oxidized conductive material such as IZO (indium zinc oxide) or ZnO _2. Good. An oxidized conductive material such as ITO, IZO, or ZnO ₂ is a dense material and has a low gas permeability. If the common electrode 72 is formed of such a material, since the common electrode 72 is formed over the effective region A and the peripheral region B, the unit circuit P in the effective region A and the peripheral circuit in the peripheral region B are protected from the outside air. These deteriorations are suppressed. Thus, if the common electrode 72 (second electrode) includes the second layer, the common electrode 72 is superior in light transmittance and conductivity as compared with the material forming the first layer. The power supply impedance of 72 can be greatly reduced, and the light extraction efficiency from the light emitting functional layer can be improved. The common electrode 72 (second electrode) includes a first layer made of a material having a low work function, a material that stabilizes the material, and a second layer made of the above-described oxidized conductive material. Thus, it is possible to prevent the first layer and the second layer from reacting and deteriorating the electron injection efficiency.

  Prior to the formation of the common electrode 72, the contact hole CH is formed in the partition wall 37. The auxiliary electrode first portion 150a and the common electrode 72 are connected to each other in the effective region A through the contact hole CH. By connecting the common electrode 72 to the first portion 150a (see FIG. 1B) of the auxiliary electrode formed in a grid pattern in the effective region A, the power source impedance of the common electrode 72 can be greatly reduced. . In addition, since the second portion 150b of the auxiliary electrode is not covered with the partition wall 37 in the peripheral region B, the second electrode 150b is in surface contact with the common electrode 72 over a wide area, so that the connection resistance can be lowered. Therefore, the power supply impedance can be greatly reduced.

  Next, a sealing film 80 is formed so as to cover the common electrode 72 and the auxiliary electrode 150. For the sealing film 80, for example, an inorganic material having a low gas permeability such as silicon oxynitride or silicon oxide having high transparency and good moisture resistance is used. The sealing film 80 covers the entire area of the peripheral circuit (scanning line driving circuits 100A and 100B having the transistors 40 and 50 and the precharge circuit 120). However, the sealing film 80 is not formed on the outer edge of the substrate 10, and a seal 90 is bonded on the circuit protection film 34 at the outer edge, and a transparent sealing substrate (counter substrate) is formed thereon. 110 is joined. For example, the seal 90 may be an adhesive, or a spacer for holding the counter substrate 110 may be joined by an adhesive.

FIG. 5 is a simplified cross-sectional view of region C in FIG. That is, in the peripheral region B, it is a cross-sectional view of an end portion outside the transistors 40 and 50 that are a part of the scanning line driving circuit 100. For simplicity of explanation, the base protective layer 31, the gate insulating layer 32, the first interlayer insulating layer 33, the circuit protective film 34, and the electrodes of the transistors 40, 50, and 60 sandwiched between these layers shown in FIG. 5 collectively shows the element layer 30. The second electrode power supply line 140 is formed in the upper layer portion of the element layer 30. As described above, the upper surface of the second electrode power supply line 140 functions as a contact region with the upper electrode. FIG. 4 shows the second interlayer insulating film 35, the auxiliary electrode 150, the common electrode 72, the sealing film 80, the seal 90, and the counter substrate 110 in addition to the element layer 30 and the second electrode power line 140. Yes. Hereinafter, the relative positional relationship of each layer will be described in detail with reference to this figure.
As described above, the second interlayer insulating film 35 is used to planarize unevenness caused by transistors and wirings disposed in the lower layer. In addition, the second interlayer insulating film 35 is formed of an acrylic or polyimide insulating organic polymer material or the like, and is connected to the anode 76 from circuit elements such as the transistors 40, 50, and 60 disposed in the element layer 30. Also, it has a function of insulating the electrodes such as the common electrode 72 and the auxiliary electrode 150. That is, it functions as an insulating layer that insulates each electrode from a circuit element for controlling light emission of the light emitting element.

As shown in FIG. 5, a second interlayer insulating film 35 is formed on the element layer 30 including the second electrode power supply line 140, and the end E2 of the second interlayer insulating film 35 has a second electrode power supply. It is further inside than the inner end E3 of the contact region of the line 140. The second portion 150b (the second portion 150b of the auxiliary electrode 150) is formed on the upper surface of the second interlayer insulating film 35 and the contact region between the end E2 and the end E3 of the second interlayer insulating film 35 on the upper surface of the element layer 30. Hereinafter, the “auxiliary electrode 150” is simply formed. Thus, the auxiliary electrode 150 is in contact with and overlaps with the second electrode power line 140 and is electrically connected to the second electrode power line 140. In the illustrated example, the end E4 of the auxiliary electrode 150 coincides with the outer end of the contact region. However, it does not have to coincide with each other, and the auxiliary electrode 150 may be formed so as to cover the contact region. . In other words, the end E4 of the auxiliary electrode may be positioned further outside than the outer end of the contact region.
In this specification, “inside” and “outside” indicate relative positions in the substrate surface when the end E5 of the substrate 10 is used as a reference. Therefore, for example, “the end E1 is (substantially) inside the end E2” indicates that the distance between the end E1 and the end E5 of the substrate 10 is longer than the distance between the end E2 and the end E5. .

  A common electrode 72 is formed on the auxiliary electrode 150. The end E1 of the common electrode 72 is formed so as to be located inside the end E2 of the second interlayer insulating film 35. Further, the end E4 of the auxiliary electrode 150 is formed to be located outside the end E1 of the common electrode 72. As described above, the auxiliary electrode 150 is formed at the same time as the pixel electrode 76, and then, after the partition wall 37 and the light emitting functional layer 74 are formed in order, the common electrode 72 is formed so as to cover the partition wall 37 and the light emitting functional layer 74. It is formed.

  As described above, the auxiliary electrode 150 is made of a metal having conductivity and light shielding properties. Therefore, the first portion 150a of the auxiliary electrode 150 is formed in a lattice shape so that the auxiliary electrode 150 and the pixel electrode 76 do not overlap in the effective region A. That is, in the effective region A, the first portion 150 a of the auxiliary electrode 150 is disposed only in the gap between the light emitting elements 70 so as not to block the light emitted from the light emitting elements 70. Since the light emitting elements 70 are arranged at a minute interval, it is desirable that the auxiliary electrode 150 be formed using a highly accurate alignment mechanism. On the other hand, since the common electrode 72 is formed of a transparent material, the common electrode 72 is uniformly formed in the effective region A so as to cover the light emitting element 70 in the effective region A. For this reason, the common electrode 72 can be formed even if an electrode having a lower accuracy than the alignment mechanism used for forming the auxiliary electrode 150 is used. However, when the common electrode 72 is formed using an alignment mechanism with low accuracy, the position of the end E1 of the common electrode 72 may vary.

  Here, the error range of the position of the end E1 of the common electrode 72 is t1, and the error range of the position of the end E4 of the auxiliary electrode 150 is t2. When an alignment mechanism with higher accuracy is used for the auxiliary electrode 150, t1> t2. Further, when a single alignment mechanism having an accuracy required for forming the auxiliary electrode 150 is used for both the auxiliary electrode and the common electrode 72, t1 = t2. Therefore, it is unlikely that the error t2 of the auxiliary electrode 150 is larger than the error of the common electrode 72. Even if t1 <t2 in the latter case, the high-precision alignment mechanism is used. The error is not a problem. Therefore, in the present embodiment, the end E4 of the auxiliary electrode 150 is configured to be located outside the end E1 of the common electrode 72. According to this configuration, the distance from the position E4max at which the error of the auxiliary electrode 150 is maximum on the end E5 side of the substrate 10 (the position when the end E4 is closest to the end E5 side of the substrate 10) to the end E5 is considered. Thus, the width of the peripheral region B (that is, the “frame region”) can be determined. Therefore, the frame region can be reduced as compared with the case where the end E1 of the common electrode 72 to which a larger error is allowed is arranged outside the end E4 of the auxiliary electrode 150. That is, it is possible to reduce the influence of the accuracy of the alignment mechanism used for forming the common electrode 72 on the width of the frame region. Note that the end E2 is such that the position E1max where the error of the common electrode 72 is maximum on the end E5 side of the substrate 10 is inside the position E4max where the error of the auxiliary electrode 150 is maximum on the end E5 side of the substrate 10. It is desirable to determine the reference position of the end E4 (position when there is no error).

  FIG. 6 shows a case where the common electrode 72 is formed so as to overlap the end E2 of the second interlayer insulating film 35 as a comparative example. As shown in FIG. 6, in this comparative example, the end E <b> 1 of the common electrode 72 is disposed outside the end E <b> 2 of the second interlayer insulating film 35. As described above, the second interlayer insulating film 35 is often formed thick in order to flatten the underlying unevenness. Therefore, the end E2 of the second interlayer insulating film 35 is a large step. On the other hand, the common electrode 72 is formed of a thin film material such as ITO, for example. For this reason, in the configuration shown in the comparative example, a crack I as shown in FIG. 6 may occur in the common electrode 72 due to the influence of the step at the end E2 of the second interlayer insulating film 35. When the crack I occurs, the resistance value increases at the crack portion, so that the value of the current flowing at the portion where the crack I occurs and the portion where the crack I does not occur are different and the voltage drop amount is different. However, in the present embodiment, since the end E1 of the common electrode 72 is disposed inside the end E2 of the second interlayer insulating film 35, disconnection and cracks in the common electrode 72 are prevented. Therefore, it is possible to prevent an increase in resistance value due to disconnection or cracking. Accordingly, it is possible to suppress luminance unevenness of the light emitting element 70.

<A-2: Modification of First Embodiment>
In the above-described embodiment, the configuration in which the auxiliary electrode 150 and the pixel electrode 76 are formed at the same time has been described. However, the auxiliary electrode 150 is formed in a process after the partition wall 37 is formed, not at the same time as the pixel electrode 76. You may do it.

  FIG. 7 is a partial cross-sectional view of a light emitting device 1A according to this modification. As shown in FIG. 7, in the light emitting device 1 </ b> A, auxiliary electrodes 150 (150 a and 150 b) are formed so as to cover the second interlayer insulating film 35 and the partition walls 37. In the embodiment described above, as shown in FIG. 4, the auxiliary electrode 150 has a portion formed on the second interlayer insulating layer 35 and the partition wall 37. On the other hand, in this modified example, the auxiliary electrode 150 is formed on the partition 37 in a portion where the partition 37 is present. Here, the partition wall 37 functions as an insulating layer that separates the common electrode 72 and the auxiliary electrode 150 from the transistors 40, 50, 60, similarly to the second interlayer insulating layer 35. Similarly to the first embodiment described above, the end E4 of the auxiliary electrode 150 overlaps the second electrode power line 140, the end E1 of the common electrode 72 is inside the end E4 of the auxiliary electrode 150, It is formed inside the end E2 of the second interlayer insulating film 35.

  The outline of the manufacturing process of the light emitting device 1A is as follows. After forming the second interlayer insulating film 35, the pixel electrode 76 is formed on the second interlayer insulating film 35. Thereafter, the partition 37 is formed on the upper layer of the pixel electrode 76, and the auxiliary electrode 150 is formed on the surface excluding the second interlayer insulating film 35 and the opening 37a on the partition 37. Next, the light emitting functional layer 74 is formed in the space (that is, the opening 37a) defined by the partition wall 37 on the pixel electrode 76. Conversely, the auxiliary electrode 150 may be formed after the light emitting functional layer 74 is formed. Further, the common electrode 72 having translucency is formed over the effective region A and the peripheral region B. Thereafter, the sealing film 80 is formed on the common electrode 72. However, the sealing film 80 is not formed on the outer edge of the substrate 10, and the seal 90 is bonded on the circuit protective film 34 and the transparent sealing substrate 110 is bonded on the upper edge at the outer edge. The

  If the light emitting functional layer 74 is formed after the auxiliary electrode 150 is formed, the light emitting functional layer 74 is not yet formed at the time of forming the auxiliary electrode 150, so that even if photolithography is used to form the auxiliary electrode 150. There is no possibility of deteriorating the light emitting functional layer 74. Therefore, the pattern of the auxiliary electrode 150 can be formed by photolithography, and the auxiliary electrode 150 can be formed with the same accuracy as the wiring of the transistors 40, 50, 60 and the scanning line 111. On the other hand, if the auxiliary electrode 150 is formed after the light emitting functional layer 74 is formed, there is an advantage that the auxiliary electrode 150 and the common electrode 72 can be connected without being contaminated with the light emitting material.

  Further, in this modification, the common electrode 72 is formed on the auxiliary electrode 150, so that even if the auxiliary electrode 150 thicker than the common electrode 72 is formed, no stress is applied to the common electrode 72. Therefore, the deformation of the common electrode 72 due to the stress from the upper layer is suppressed.

<B: Second Embodiment>
Next, a light emitting device according to a second embodiment of the invention will be described. FIG. 8 is a partial cross-sectional view of the light emitting device 2A according to the present embodiment. As shown in FIG. 98, the auxiliary electrode 150 is formed on the common electrode 72 so as to be in surface contact, and the sealing film 80 is formed so as to cover the auxiliary electrode 150 and the common electrode 72. The light emitting device 2A is the same as the light emitting device 1A (FIG. 7) of the first embodiment except that the common electrode 72 is formed below the auxiliary electrode 150. Therefore, the description is omitted as appropriate.

  Similar to the light emitting device 1 </ b> A, in the present embodiment, the auxiliary electrode 150 is formed above the partition wall 37 in the portion where the partition wall 37 is present. Therefore, the partition 37 functions as an insulating layer that separates the common electrode 72 and the auxiliary electrode 150 from the transistors 40, 50, and 60, similarly to the second interlayer insulating layer 35.

  The outline of the manufacturing process of the light emitting device 2A is as follows. After forming the second interlayer insulating film 35, the pixel electrode 76 is formed on the second interlayer insulating film 35. Thereafter, the partition 37 is formed on the upper layer of the pixel electrode 76, and the light emitting functional layer 74 is formed in a space (that is, the opening 37 a) defined by the partition 37 on the pixel electrode 76. Further, a transparent common electrode 72 is formed over the effective area A and the peripheral area B. Thereafter, the auxiliary electrode 150 is formed in the region excluding the upper layer of the opening 37a on the common electrode 72, and the sealing film 80 is formed. However, the sealing film 80 is not formed on the outer edge of the substrate 10, and the seal 90 is bonded on the circuit protective film 34 and the transparent sealing substrate 110 is bonded on the upper edge at the outer edge. The

  FIG. 9 shows a partial simplified sectional view of a region F in FIG. As shown in FIGS. 8 and 9, in the light emitting device 2 </ b> A, the end E <b> 1 of the common electrode 72 is on the outer side in the plane of the substrate 10 than the transistors 40 and 50 that are a part of the scanning line driving circuit 100. It is formed inside the end E2 of the two interlayer insulating film 35 and inside the end E4 of the auxiliary electrode 150. Therefore, the same effect as the first embodiment can be obtained.

<C: Modification>
(1) In the first and second embodiments, the upper layer of the common electrode 72 or the auxiliary electrode 150 is covered with the sealing film 80, whereby the element layer 30, the second electrode power line, and the second interlayer insulating film 35 are covered. Although the layer structure including the common electrode 72 and the auxiliary electrode 150 is protected from the outside air, the sealing film 80 may be omitted.
FIG. 10 is a simplified cross-sectional view of a light emitting device 1C according to this modification. As shown in FIG. 10, in the light emitting device 1 </ b> C, the sealing film 80 is not provided, and the layer structure formed on the substrate 10 is protected by the seal 90 and the counter substrate 110. Note that a desiccant (not shown) for adsorbing moisture may be disposed inside the counter substrate 110, or a configuration in which a desiccant is embedded in the counter substrate 110 itself may be used. Further, a sealing can may be used instead of the counter substrate 110 and the seal 90.
FIG. 11 shows a simplified cross-sectional view of another light emitting device 1D according to this modification. As shown in FIG. 11, in the light emitting device 1 </ b> D, the layer structure is protected from the outside air by filling a moisture-proof filler 65 between the counter substrate 110 and the layer structure formed on the substrate 10. ing. The moisture-proof filler 65 is preferably light transmissive and low moisture-absorbing, and an epoxy or urethane adhesive can be used.

(2) In the first to fourth embodiments, the mode in which the second electrode power supply line 140 is formed in the U shape in the peripheral region B has been described. However, the present invention is not limited to this and can be modified as appropriate. .
12 and 13 are diagrams for explaining the outline of the layout of each light emitting device according to this modification. In these drawings, portions common to the above-described embodiment are denoted by the same reference numerals, and description thereof is omitted as appropriate.

  As shown in FIG. 12A, in the light emitting device 3 </ b> A, the second electrode power supply line 140 is disposed along each of the two opposing edges of the substrate 10. Further, the signal input terminal G is disposed in a region along one of the remaining two sides, and the first electrode power line 130 is disposed inside the signal input terminal G in the plane of the substrate 10. Inside the second electrode power supply line 140, scanning line driving circuits 100A and 100B are arranged along the effective area A along the effective area A, and are fed by the power supply line 140 and via the signal input terminal G. And an external control signal is given. Further, the data line driving circuit 200 is disposed along the effective area A inside the first electrode power line 130. The data line driving circuit 200 receives a control signal from the outside through the signal input terminal G while being supplied with power from the first electrode power supply line 130, and applies the control signal to each data line.

  In this example, the second interlayer insulating film 35 includes the effective region A, the scanning line driving circuits 100A and 100B, the data line driving circuit 200, and a part of the first electrode power line 130 (in the illustrated example, When the side where the signal input terminal G is disposed is defined as the longitudinal direction, the entire portion extending in the longitudinal direction and a part of the portion extending toward the lower side of the substrate 10 in a direction perpendicular to the longitudinal direction are covered. It is formed. The common electrode 72 covers the effective area A and all of the scanning line driving circuits 100A and 100B, and the left and right ends thereof on the side where the second electrode power line 140 is disposed are formed on the second interlayer insulating film 35. It is formed so as to be inside the end. Of the ends of the common electrode 72, the lower side (signal input terminal G side) is positioned outside the effective area A and inside the data line driving circuit 200, and the upper side is connected to the second interlayer insulating film. It is located inside the end of 35. That is, the respective ends of the four sides of the common electrode 72 are located inside the corresponding ends of the second interlayer insulating film 35. In other words, the end of the second interlayer insulating film 35 protrudes outward from the end of the common electrode 72 on all sides. That is, the second region covers the entire first region and protrudes outside the first region on all sides.

  The auxiliary electrode is formed as a striped individual electrode 150c having the same direction as the side on which the signal input terminal G is disposed. Specifically, the individual electrode 150c passes through the gap between the light emitting elements P in the effective region A, and in the peripheral region B, inside the first region, outside the first region, and inside the second region. It passes through a certain region, reaches the outside of the second region, extends to a region overlapping with the second electrode power line 140, and is electrically connected to the second electrode power line 140. That is, the end is located outside the end of the second interlayer insulating film 35 and located outside the end of the common electrode 72. Also by this modification, the same effect as each embodiment mentioned above is acquired.

  Next, as shown in FIG. 12B, the light emitting device 3B has the same configuration as that of the light emitting device 3A except that the positions of the scanning line driving circuit and the data line driving circuit are reversed. ing. That is, in the light emitting device 3B, the scanning line driving circuit 100 is arranged along the effective area A in the peripheral area B on the lower side of the substrate 10, and the data line driving circuits 200A and 200B are arranged on the left and right sides of the substrate 10, respectively. Arranged in the peripheral region B. The second electrode power supply line 140 is disposed outside the data line driving circuits 200A and 200B along two opposing sides (left and right sides) of the substrate 10, and the auxiliary electrode 150 is connected to the second electrode power supply line 140. Is formed in a stripe shape having a longitudinal direction (that is, the same direction as the side where the signal input terminal G is disposed). Similar to the light emitting device 3A, the left and right ends of the auxiliary electrode 150 are located outside the end of the common electrode 72 and further outside the end of the second interlayer insulating film 35. It is formed so as to overlap the line 140. Therefore, the same effect as that of the above-described embodiment can be obtained by the light emitting device 3B.

  In each of the light emitting devices 3A and 3B, as shown on the right side of FIG. 12A, the auxiliary electrode 150 is formed on the plurality of stripe-shaped individual electrodes 150c and the peripheral region B to form a plurality of individual electrodes. You may make it have the connection electrode 150d which connects 150c. In this case, the connection electrode 150d includes a portion that overlaps the inside of the first region, a portion that passes through the region that is outside the first region and inside the second region, and reaches the outside of the second region. And is formed so as to overlap the power supply line 140 for the second electrode. That is, the connection electrode 150d is arranged not only to overlap the second electrode power line 140, but also so that the end of the second interlayer insulating film 35 and the end of the common electrode 72 overlap the connection electrode 150d.

  FIGS. 13A and 13B show other layout examples of the light-emitting device. As shown in FIG. 13A, in the light emitting device 4A, the signal input terminal G is disposed along the lower edge of the substrate 10, and the second electrode power line 140 is formed in a U shape inside thereof. It is arranged. Further, a first electrode power line 130 is disposed in a U-shape inside the second electrode power line 140, and the data line driving circuit 200 is disposed between the power line 130 and the effective area A. Is done. The scanning line driving circuits 100A and 100B are respectively disposed in regions along the left and right sides of the effective region A.

  As illustrated, the second interlayer insulating film 35 includes the entire effective area A, all of the scanning line driving circuits 100A and 100B, the data line driving circuit 200, and a part of the first electrode power line 130 (not illustrated). In the example, when the side where the signal input terminal G is disposed is defined as the longitudinal direction, it is formed so as to cover a portion extending in the longitudinal direction. The common electrode 72 is formed so as to cover substantially the same portion as the second interlayer insulating film 35 and to be inside the corresponding end of the second interlayer insulating film 35 at each end of the four sides of the common electrode 72. Therefore, in the present modification, the second region where the second interlayer insulating film 35 is formed on all sides of the substrate 10 is the second region where the common electrode 72 is formed in the outer direction in the plane of the substrate 10. It protrudes beyond the area of 1.

  As shown in the figure, the auxiliary electrode is formed as a stripe-like individual electrode 150e extending in a direction parallel to the scanning line driving circuits 100A and 100B. The ends of the individual electrodes 150e on the lower end side of the substrate 10 are formed so as to overlap and contact the second electrode power line 140. In this example, the individual electrode 150e intersects the first electrode power line 130. However, by forming the first electrode power line 130 and the second electrode power line 140 in separate layers, The individual electrode 150e is formed so as to contact only the second electrode power line 140 without contacting the first electrode power line 130. Similarly, although the common electrode 72 and the first electrode power line 130 overlap, the first electrode power line 130 and the second electrode power line 140 are formed in different layers, so that the common electrode 72 The power supply line for one electrode 130 can be configured not to be in electrical contact. On the other hand, the end of the individual electrode 150e on the upper end side of the substrate 10 is located outside the end individual electrode 150e of the common electrode 72, and is further located outside the end (second region) of the second interlayer insulating film 35. To be formed. Therefore, the same effects as those of the above-described embodiments can be obtained by the light emitting device 4A.

  Next, as shown in FIG. 13B, the light emitting device 4B has the same configuration as the light emitting device 4A except that the positions of the scanning line driving circuit and the data line driving circuit are reversed. ing. That is, in the light emitting device 4B, the scanning line driving circuit 100 is arranged along the effective area A in the peripheral area B on the lower side of the substrate 10, and the data line driving circuits 200A and 200B are arranged on the left side and the right side of the substrate 10, respectively. Arranged in the peripheral region B. The second electrode power line 140 is arranged in a U-shape on the lower end side of the substrate 10 and inside the signal input terminal G, and the auxiliary electrode 150 has a longitudinal direction parallel to the data line driving circuits 200A and 200B. It is formed in a stripe shape. Similarly to the light emitting device 4A, the upper and lower ends of the auxiliary electrode 150 are located outside the end of the common electrode 72 and located outside the end of the second interlayer insulating film 35. The second electrode power supply line 140 is formed so as to overlap and contact. Therefore, the same effect as the above-described embodiment can be obtained by the light emitting device 4B.

  As shown in FIG. 12A, FIG. 12B, FIG. 13A, and FIG. 13B, in the peripheral region B, the auxiliary wiring 150 extends in the extending direction of the power supply line 140 for the second electrode. In the crossing direction, it extends in a stripe shape. That is, in FIGS. 1 to 3, the auxiliary wiring 150 b extends in the extending direction of the second electrode power line 140, but the direction intersects the extending direction of the second electrode power line 140. You may extend only to. In other words, the auxiliary wiring 150 does not necessarily need to be formed in parallel with the extending direction of the second electrode power supply line 140, and may be formed so as to intersect with the second electrode power supply 140.

<D: Electronic equipment>
Next, an electronic apparatus using the light emitting device according to the present invention will be described. FIGS. 14 to 16 show a form of an electronic apparatus that employs the light emitting device according to any one of the above forms as a display device.

  FIG. 14 is a perspective view showing a configuration of a mobile personal computer employing a light emitting device. The personal computer 2000 includes light-emitting devices 1, 1 </ b> A, 1 </ b> C, 1 </ b> D, 2 </ b> A, 3 </ b> A, 3 </ b> A, 4 </ b> B that display various images, and a main body 2010 on which a power switch 2001 and a keyboard 2002 are installed. Since the light-emitting devices 1, 1A, 1C, 1D, 2A, 3A, 3B, 4A, and 4B use organic light-emitting diode elements as the light-emitting elements 70, it is possible to display an easy-to-see screen with a wide viewing angle.

  FIG. 15 is a perspective view illustrating a configuration of a mobile phone to which the light emitting device is applied. The cellular phone 3000 includes a plurality of operation buttons 3001 and scroll buttons 3002, and light emitting devices 1, 1A, 1C, 1D, 2A, 3A, 3B, 4A, and 4B that display various images. By operating the scroll button 3002, the screen displayed on the light emitting devices 1, 1A, 1C, 1D, 2A, 3A, 3B, 4A, 4B is scrolled.

  FIG. 16 is a perspective view illustrating a configuration of a personal digital assistant (PDA) to which the light emitting device is applied. The information portable terminal 4000 includes a plurality of operation buttons 4001, a power switch 4002, and light emitting devices 1, 1A, 1C, 1D, 2A, 3A, 3B, 4A, and 4B that display various images. When the power switch 4002 is operated, various information such as an address book and a schedule book are displayed on the light emitting devices 1, 1A, 1C, 1D, 2A, 3A, 3B, 4A, 4B.

  Note that electronic devices to which the light emitting device according to the present invention is applied include, in addition to the devices shown in FIGS. 14 to 16, digital still cameras, televisions, video cameras, car navigation devices, pagers, electronic notebooks, electronic papers, Examples include calculators, word processors, workstations, videophones, POS terminals, printers, scanners, copiers, video players, devices equipped with touch panels, and the like. Further, the use of the light emitting device according to the present invention is not limited to the display of images. For example, in an image forming apparatus such as an optical writing type printer or an electronic copying machine, an optical head (writing head) that exposes a photosensitive member according to an image to be formed on a sheet is used. The light emitting device of the present invention is also used as an optical head.

(A) is a schematic plan view which shows a part of structure of the light-emitting device concerning 1st Embodiment of this invention, (B) is the state which further formed the auxiliary electrode and the pixel electrode after the state of (A). FIG. It is a circuit diagram which shows the detail of the pixel circuit of the apparatus. FIG. 2 is an enlarged view of a part of FIG. It is a fragmentary sectional view of the apparatus. It is a partial simplified sectional view of the same device. In a comparative example, it is a figure which shows a mode that the crack generate | occur | produced in the common electrode. It is a fragmentary sectional view of the light-emitting device concerning the modification of a 1st embodiment. It is a fragmentary sectional view of the light-emitting device concerning a 2nd embodiment of the present invention. It is a partial simplified sectional view of the same device. It is a partial simplified sectional view of the light-emitting device which concerns on the modification of this invention. It is a partial simplified sectional view of the light-emitting device which concerns on the modification of this invention. It is the outline of the layout of the light-emitting device which concerns on the modification of this invention. It is the outline of the layout of the light-emitting device which concerns on the modification of this invention. It is a perspective view which shows the structure of the mobile type personal computer which employ | adopted the light-emitting device. It is a perspective view which shows the structure of the mobile telephone to which the light-emitting device is applied. It is a perspective view which shows the structure of the portable information terminal to which the light-emitting device is applied.

Explanation of symbols

  1, 1A, 1C, 1D, 2A, 3A, 3B, 4A, 4B ... light emitting device, 10 ... substrate, 70 ... light emitting element, 34 ... circuit protective film, 35 ... second interlayer insulating film (insulating layer), 37 ... Partition wall 37a ... Opening portion 65 ... Moisture-proof filler 72 ... Common electrode (second electrode) 74 ... Light emitting functional layer 76 ... Pixel electrode (first electrode) 80 ... Sealing film 90 ... Seal DESCRIPTION OF SYMBOLS 100A, 100B ... Scanning line drive circuit, 110 ... Counter board | substrate, 111 ... Scanning line, 112 ... Data line, 113 ... Power supply line, 120 ... Precharge circuit, 140 ... Power supply line for 2nd electrodes, 150 ... Auxiliary electrode, 150c, 150e ... individual electrodes, 150d ... connection electrodes, 200, 200A, 200B ... data line drive circuit, A ... effective region, B ... peripheral region, C, F ... region, E1-E5 ... end, G ... signal input terminal , P: Unit circuit.

Claims (7)

A substrate,
A plurality of first electrodes provided on the substrate, a second electrode provided in common to the plurality of first electrodes, and light emission provided between the plurality of first electrodes and the second electrode A silicon layer that is electrically connected to each of the plurality of first electrodes and has a source region and a drain region formed thereon, and is provided to face the silicon layer. A plurality of transistors having a gate electrode, and a light emitting device provided in an effective region,
A second electrode power line for supplying a potential to the second electrode;
An auxiliary electrode electrically connected to the second electrode and the second electrode power line;
The plurality of first electrodes and the plurality of first electrodes in a third direction perpendicular to a first direction parallel to one side of the substrate and a second direction parallel to the other side intersecting the one side of the substrate . An insulating layer provided in a layer between the gate electrode of the transistor,
The second electrode and the insulating layer are provided in the effective region and a peripheral region that is a region between the end of the substrate and the effective region,
The auxiliary electrode has a second electrode connection portion in contact with the second electrode,
The second electrode connection portion covers a surface of the insulating layer facing the second electrode in the peripheral region;
The end portion of the insulating layer is disposed between the end portion of the substrate and the end portion of the second electrode as viewed from the third direction,
The end portion of the second electrode overlaps the surface of the insulating layer facing the second electrode when viewed from the third direction in the peripheral region of the substrate,
An end portion of the auxiliary electrode is disposed between the end portion of the substrate and the end portion of the insulating layer as viewed from the third direction. The auxiliary electrode has a power line connecting portion in contact with the power line for the second electrode,
2. The light emitting device according to claim 1, wherein the power supply line connecting portion is disposed between an end portion of the substrate and an end portion of the insulating layer as viewed from the third direction. The auxiliary electrode has a plurality of individual electrodes electrically connected to the second electrode in the effective region;
The plurality of light emitting elements are arranged in a matrix in which a plurality of light emitting element arrays composed of the plurality of light emitting elements arranged in the first direction are arranged in the second direction,
Each of the plurality of individual electrodes is provided on the stripe along the first direction so as to pass through the gaps of the plurality of light emitting elements and from the inside to the outside of the effective region, and in the peripheral region, The light emitting device according to claim 1 , wherein the light emitting device is connected to the conductive film. The auxiliary electrode, the light emitting device according to any one of claims 1 to 3, characterized in that mutually connecting each of the plurality of individual electrodes in the peripheral region.   5. The light-emitting device according to claim 3, wherein the second electrode power line is provided in the peripheral region so as to intersect the first direction. 6. Each of the plurality of transistors includes :
A source electrode connected to the source region and disposed in a layer between the gate electrode and the first electrode ;
A drain electrode connected to the drain region and disposed in a layer between the gate electrode and the first electrode ;
The light emitting device according to any one of claims 1 to 5 wherein the power line is characterized by being formed in the same layer as the source electrode and / or the drain electrode. An electronic device including a light-emitting device according to any one of claims 1 to 6.

Images