JP2004213910A - Light emitting device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device and its manufacturing method that has a structure to prevent arrival of oxygen or arrival of moisture at a light emitting element. <P>SOLUTION: This light emitting device and its manufacturing method are characterized in that the device has a structure to paste a substrate 11 with the light emitting element mounted thereon together with the opposing 12, and such a material that the viscosity is put back into the original state after a shearing stress is removed is used, wherein if there is the shearing stress which is generated between the substrate 11 and the sealant and generated by the pressure in pasting the substrate 11 to the opposing 12, the viscosity of the sealant is reduced, when a sealant is uncured. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device having a circuit including a thin film transistor (hereinafter, referred to as a TFT) and a manufacturing method thereof. For example, the present invention relates to an electronic device in which an electro-optical device represented by a liquid crystal display panel or a light-emitting display device having a light-emitting layer containing an organic compound is mounted as a component.
[0002]
Note that, in the present invention, a semiconductor device generally refers to a device that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.
[0003]
[Prior art]
In recent years, research on a light emitting device having an EL element as a self-luminous element has been actively conducted, and in particular, a light emitting device using an organic material as an EL material has attracted attention. This light emitting device is also called an EL display.
[0004]
Note that the EL element includes a layer containing an organic compound from which luminescence (Electro Luminescence) generated by applying an electric field is obtained (hereinafter, referred to as an EL layer), an anode, and a cathode. Luminescence of an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning to a ground state from a triplet excited state. The light-emitting device manufactured by the film formation method can be applied to the case where either light emission is used.
[0005]
Unlike a liquid crystal display device, a light emitting device is of a self-luminous type and has a feature that there is no problem of a viewing angle. That is, as a display used outdoors, it is more suitable than a liquid crystal display, and its use in various forms has been proposed.
[0006]
An EL element has a structure in which an EL layer is sandwiched between a pair of electrodes. The EL layer usually has a stacked structure. A typical example is a laminated structure of “hole transport layer / light emitting layer / electron transport layer” proposed by Tang et al. Of Kodak Eastman Company. This structure has a very high luminous efficiency, and most light-emitting devices currently under research and development adopt this structure.
[0007]
In addition, a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are stacked in this order on the anode. The structure is also good. The light emitting layer may be doped with a fluorescent dye or the like. These layers may be formed using a low molecular material or a high molecular material.
[0008]
In this specification, all layers provided between the cathode and the anode are collectively called an EL layer. Therefore, the above-described hole injection layer, hole transport layer, light emitting layer, electron transport layer, and electron injection layer are all included in the EL layer.
[0009]
In this specification, a light-emitting element formed of a cathode, an EL layer, and an anode is referred to as an EL element, and includes an EL layer between two types of stripe-shaped electrodes provided to be orthogonal to each other. There are two types: a formation method (simple matrix method), and a method of forming an EL layer between a pixel electrode connected to a TFT and arranged in a matrix and an opposing electrode (active matrix method). However, when the pixel density increases, it is considered that an active matrix type in which a switch is provided for each pixel (or one dot) is advantageous because it can be driven at a low voltage.
[0010]
The EL material forming the EL layer is extremely susceptible to deterioration, and is easily oxidized or absorbed by the presence of oxygen or water to deteriorate.
[0011]
Therefore, in order to prevent oxygen and moisture from reaching the light emitting element part, the light emitting element part is covered with a can called a sealing can, which is made by pressing a thin stainless steel plate, or a glass substrate with a concave part made in advance. And then sealing, dry air is sealed inside, and a desiccant is attached. In addition, this glass substrate is hereinafter referred to as facing unless otherwise specified.
[0012]
When the sealing can or the opposing member is attached to the light emitting element, an adhesive is usually used. Hereinafter, this adhesive is referred to as a sealant. The sealant cures in a short time in a temperature range from room temperature to about 100 ° C. or less in consideration of the thermal effect on the EL layer during the sealing process and the process time. Use a material with extremely low transmission. In addition, a one-pack type sealant is used in consideration of simplicity of operation. The sealant has a viscosity of about 1 to 1000 Pa · s at room temperature in an uncured state, and has fluidity.
[0013]
The sealant forms a predetermined pattern on the substrate using a coating device called a dispenser or a printing machine.
[0014]
The seal pattern is applied so as to have a positional relationship surrounding the light emitting region. Since the light emitting region is generally rectangular, the seal pattern also has a rectangular shape surrounding it. When a plurality of light emitting regions are formed on the substrate, a plurality of seal patterns are arranged according to the light emitting regions.
[0015]
After forming the seal pattern on one of the sealing cans or the substrate, the other substrate is overlaid, and the sealant is cured while applying pressure so as to sandwich it from both sides. After the curing, the process proceeds to a scribe process in which the substrate is cut into a predetermined shape.
[0016]
[Problems to be solved by the invention]
If the number of seal patterns to be applied is large, or if the waiting time before bonding in the sealing step becomes long, the applied uncured seal patterns begin to be distorted.
[0017]
FIG. 2 schematically shows a cross section of this seal. (A) is a state immediately after the application, and (B) is a state left for about one hour after the application. 201 and 202 are cross sections of the sealant, and 203 and 204 are facing each other. Immediately after application, the cross-sectional shape is as shown in (A), but as time passes, it is deformed as shown in (B) due to the influence of gravity and the surface tension of the substrate. Furthermore, since the degree of this deformation varies depending on the location, if the lamination is performed in this state, the degree of adhesion between the bonded substrate and the seal will be uneven within the panel surface, and depending on the location, the moisture in the air will be higher. It was easy to penetrate, and a defect such as a dark spot, which caused display defects, was likely to occur.
[0018]
Who is more unavoidable than handling fluid materials, but increasing the viscosity of the seal can reduce that. However, increasing the viscosity caused another problem.
[0019]
When the opposing substrate is bonded to the substrate, if the viscosity of the seal increases, the seal is less likely to be broken. Therefore, when a considerable pressure was applied, the substrate could be damaged by the pressure, and it was not a matter of simply increasing the pressure.
[0020]
Also, like a substrate on which a TFT is formed, a pattern such as a bus line that is a wiring for supplying image signals is formed, and a step corresponding to the thickness of the component is formed in the substrate surface. In such a case, if the viscosity of the sealant is higher in that part than in a flat part, the sealant may be less likely to flow around. As a result, a gap is formed between the sealant and the substrate or a structure on the substrate, and sealing is not performed well. Also, the adhesive strength was uneven inside the seal.
[0021]
An object of the present invention is to solve these problems and to provide a light-emitting device having a structure for preventing oxygen or moisture from reaching a light-emitting element and a method for manufacturing the light-emitting device.
[0022]
[Means for Solving the Problems]
According to the present invention, a first electrode, an organic compound layer in contact with the first electrode, and a second electrode in contact with the organic compound layer are provided between a pair of substrates at least one of which is translucent. A method for manufacturing a light-emitting device including a pixel portion having a plurality of light-emitting elements, wherein a sealant is arranged between a pair of substrates so as to surround an outer periphery of the pixel portion, and when the sealant is uncured, Due to the pressure on the substrate, when there is a shear stress generated between the substrate and the sealant, the viscosity of the sealant is reduced, and the material returns to its original state after removing the shear stress, and The sealant must have a spacing material to keep the distance between the pair of substrates constant
It is a light emitting device characterized by the above.
[0023]
Further, the light emitting device is characterized in that the sealant is a photocurable resin.
[0024]
Further, the light emitting device is characterized in that the sealing agent is a resin that uses both light curing and heat curing.
[0025]
Further, the light emitting device is characterized in that the sealing agent is an epoxy resin.
[0026]
Further, in the light emitting device, the sealant has a viscosity ratio of 3 or more when the shear stress is applied to the stationary state.
[0027]
Further, the light emitting device is characterized in that the gap holding agent is made of an inorganic material.
[0028]
Further, the light emitting device is characterized in that the gap holding agent contains SiO2.
[0029]
In addition, a light-emitting device includes a first electrode, an organic compound layer in contact with the first electrode, and a second electrode in contact with the organic compound layer, between a pair of substrates at least one of which is light-transmitting. A method for manufacturing a light-emitting device including a pixel portion having a plurality of elements, wherein a sealant is disposed between a pair of substrates so as to surround an outer periphery of the pixel portion, and the pair of substrates is overlapped with each other. A pressure is applied in a direction perpendicular to the substrate surface, and when the sealant is uncured, the viscosity of the sealant decreases when there is a shear stress generated between the substrate and the sealant caused by the pressure on the substrate. A method of manufacturing a light-emitting device, characterized in that the sealant is made of a material whose viscosity returns to its original state after removing the shear stress, and that the sealant has a spacing material for keeping the spacing between the pair of substrates constant. is there.
[0030]
Further, in the method for manufacturing a light emitting device, the sealant is a photocurable resin.
[0031]
Further, in the method for manufacturing a light-emitting device, the sealant is a resin that uses both light curing and heat curing.
[0032]
Further, in the method for manufacturing a light emitting device, the sealant is an epoxy resin.
[0033]
Further, there is provided a method for manufacturing a light-emitting device, characterized in that the sealing agent has a viscosity ratio of 3 or more when the applied stress is applied to the stationary state.
[0034]
The invention described in this specification focuses on the relationship between the pressure applied to the sealant during the bonding of the substrates and the shear stress applied to the sealant by the pressure.
[0035]
The property that the viscosity of the material itself changes due to the shear stress on the material is generally called thixotropy or simply thixotropy. Thixotropic properties are also called thixotropic. In the case of a dispersion system such as a paste, when the viscosity of a material is measured with a rotational viscometer, the viscosity decreases according to the number of rotations. Incidentally, it is constant for a Newtonian fluid such as water.
[0036]
Assuming that the viscosity is measured by a rotary viscometer, the ratio of the viscosities at a predetermined rotation speed a and b at this time is defined as a thixotropic index TI here. Take the ratio so that the TI value is 1 or more.
[0037]
FIG. 13 is a conceptual diagram showing the state of the substrate and the sealant at the time of bonding. In the drawing, the forces acting on individual places are indicated by arrows. Although the direction of the force is represented by the direction of the arrow, the length of the arrow does not necessarily represent the magnitude of the force.
[0038]
In FIG. 13, reference numeral 1301 denotes the substrate, 1302 faces, 1303 denotes the sealant, and 1304 denotes the direction of the shear stress acting between the substrate and the sealant. Reference numeral 1305 denotes a direction in which the seal spreads in the bonding step. When a material having such a property is used, the shear stress 1304 to the sealant based on the pressing pressure 1306 for bonding is the largest when the sealant is being spread and the sealant is being spread by the press. The instantaneous spreading speed (deformation speed) of the material also becomes maximum at that time, and at this time, the viscosity of the material is reduced at once. Therefore, the material spreads smoothly at the portion closest to the step structure, and the seal goes well around the step portion.
[0039]
By forming the seal pattern of the sealant in a simple shape, not only the dispenser device but also another seal pattern forming method, for example, a printing method can be used. In particular, dispensers are widely used at present because they can form multi-product patterns without using a special large-scale fixed pattern mask.
[0040]
A dispenser is a device that can draw a pattern of a sealant on a substrate as if drawing a line with a pen.The uncured sealant is filled into a syringe-shaped container called a syringe, which is shaped like a syringe. A seal pattern is formed on the substrate while applying pressure with compressed air or the like from the nozzle and gradually flowing out the seal from a nozzle provided on the other side.
[0041]
Further, since the light emitting element is sealed with the sealant and the substrate, it can effectively block moisture and oxygen. Note that the bonding of the pair of substrates is preferably performed in a reduced pressure or nitrogen atmosphere.
[0042]
At this time, the smaller the distance between the substrates, the more difficult it is for water to enter. However, since it is difficult to keep the distance between the substrates constant only by bonding the substrates, a spacer made of a hard material is mixed into the adhesive as a material for maintaining the gap. As the material, an inorganic material, for example, a material mainly composed of SiO2 is used. The spacer has a spherical or cylindrical shape. Since a high-thixotropic material reduces the viscosity of the sealant when pressure is applied in the substrate bonding process, it is very effective to incorporate a spacer in order to prevent the material from being accidentally crushed.
[0043]
In the structure relating to each of the above manufacturing methods, the step of curing the sealant is a step of irradiating ultraviolet rays or a step of heating.
[0044]
As the material of the sealant, a material which has low permeability to oxygen and moisture and which is cured by heating and which is cured at 100 ° C. or less is preferable. This is because the glass transition point of the EL layer is in the range of 100 ° C. to 150 ° C. for many materials, and when a temperature exceeding the glass transition point is applied, the composition of the EL layer changes.
[0045]
Note that the light-emitting element (EL element) includes a layer containing an organic compound that can obtain luminescence (Electro Luminescence) generated by application of an electric field (hereinafter, referred to as an EL layer), an anode, and a cathode. Luminescence in an organic compound includes light emission when returning from a singlet excited state to a ground state (fluorescence) and light emission when returning from a triplet excited state to a ground state (phosphorescence), which are produced by the present invention. The light emitting device can be applied to the case where either light emission is used.
[0046]
A light-emitting element (EL element) including an EL layer has a structure in which an EL layer is sandwiched between a pair of electrodes. The EL layer usually has a stacked structure. A typical example is a laminated structure of “hole transport layer / light emitting layer / electron transport layer” proposed by Tang et al. Of Kodak Eastman Company. This structure has a very high luminous efficiency, and most light emitting devices currently under research and development adopt this structure.
[0047]
In addition, a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are stacked in this order on the anode. The structure is also good. The light emitting layer may be doped with a fluorescent dye or the like. Further, these layers may be formed entirely using a low molecular material, or may be formed entirely using a high molecular material. Further, a layer containing an inorganic material may be used. In this specification, all layers provided between the cathode and the anode are collectively called an EL layer. Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are all included in the EL layer.
[0048]
In the present invention, as the second electrode (cathode or anode), a thin metal film through which light is transmitted, typically a film containing aluminum as a main component, is used, but the metal thin film is easily oxidized. However, the electric resistance value becomes high. Further, there is a possibility that the second electrode reacts with a component contained in the light transmitting layer described later. Therefore, the second electrode (cathode or anode) formed on the layer containing the organic compound is formed by a transparent protective layer, for example, CaF 2 _Two , MgF _Two Or BaF _Two It may be blocked by covering with. Also, CaF _Two , MgF _Two , BaF _Two Can be formed by an evaporation method, and by continuously forming a cathode and a transparent protective layer by an evaporation method, contamination of impurities and exposure of the electrode surface to the atmosphere can be prevented. Also, CaF _Two , MgF _Two , BaF _Two Is a material that is more stable than LiF, and hardly diffuses into the TFT and exerts an adverse effect.
[0049]
Further, the protective layer may be formed by a sputtering method. In this case, sputtering may be performed using a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride. For example, a silicon nitride film can be formed by using a target made of silicon and performing sputtering by setting the atmosphere in the sputtering chamber 131 to a nitrogen atmosphere or an atmosphere containing nitrogen and argon.
[0050]
In addition, a metal having no oxygen atoms (a material having a large work function) such as a titanium nitride film is used as the first electrode, and a metal having no oxygen atoms (a material having a small work function) is used as the second electrode. , For example, using an aluminum thin film, _Two , MgF _Two , BaF _Two , The region between the first electrode and the second electrode can be maintained in an oxygen-free state near zero.
[0051]
Further, a light transmitting layer is provided between the substrate and the substrate on which the layer containing an organic compound is formed. The light transmitting layer is preferably made of a gaseous material, a liquid material, a solid material, or the like, and has a high transmittance of light emitted from the light emitting element, and preferably has a transmittance as uniform as possible in a wavelength range to be used. Further, the light transmitting layer has a positional relationship close to that of a layer containing an organic compound, which is easily affected by oxygen and moisture, and thus it is desirable that the light transmitting layer be as inert as possible. For example, if the bonding step facing the layer containing the organic compound is performed in an inert gas atmosphere, for example, a high-purity nitrogen atmosphere, the light-transmitting layer is directly filled with the high-purity nitrogen gas. In addition, a liquid of a colorless and transparent fluorine compound or a cured product of an organic substance such as an epoxy resin may be disposed.
[0052]
Note that in the light emitting device of the present invention, a driving method for screen display is not particularly limited, and for example, a dot sequential driving method, a line sequential driving method, a plane sequential driving method, or the like may be used. Typically, a line-sequential driving method is used, and a time-division grayscale driving method or an area grayscale driving method may be used as appropriate. Further, the video signal input to the source line of the light emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be appropriately designed in accordance with the video signal.
[0053]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of the present invention will be described below.
[0054]
(Embodiment 1)
FIG. 1A is a top view of an active matrix light-emitting device embodying the present invention.
[0055]
In FIG. 1A, reference numeral 101 denotes a substrate, 102 denotes an opposite side, 103 denotes a pixel portion, 104 denotes a driving circuit portion, 105 denotes a terminal portion, and 106 denotes a sealant.
[0056]
Although the material of the substrate 101 is not particularly limited, it is preferable that the substrate 101 has the same coefficient of thermal expansion in order to be bonded to the facing member 102. In the case of a bottom emission type, a light-transmitting substrate such as a glass substrate, a quartz substrate, or a plastic substrate is used. In the case of a top emission type, a semiconductor substrate or a metal substrate can also be used. The substrate 101 is provided with a pixel portion 103 having a plurality of light-emitting elements, a driver circuit portion 104, and a terminal portion 105.
[0057]
Next, a part of a cross-sectional structure in the pixel portion of the present invention is shown in FIG.
[0058]
In FIG. 3A, 300 is a substrate, 301a and 301b are insulating layers, 302 is a TFT, 308 is a first electrode, 309 is an insulator, 310 is an EL layer, 311 is a second electrode, and 312 is transparent protection. The layers 313 are light transmitting layers, and 314 is facing.
[0059]
A TFT 302 (p-channel TFT) provided on the substrate 300 is an element for controlling a current flowing through the EL layer 310 that emits light, and 304 is a drain region (or a source region). Reference numeral 306 denotes a drain electrode (or source electrode) for connecting the first electrode to the drain region (or source region). In addition, a wiring 307 such as a power supply line or a source wiring is formed at the same time as the drain electrode 306. Here, an example is shown in which the first electrode and the drain electrode are formed separately, but they may be the same. An insulating layer 301a serving as a base insulating film (here, the lower layer is a nitride insulating film and the upper layer is an oxide insulating film) is formed over the substrate 300, and a gate insulating film is provided between the gate electrode 305 and the active layer. Is provided. Reference numeral 301b denotes an interlayer insulating film made of an organic material or an inorganic material. Although not shown here, one pixel is provided with one or more TFTs (n-channel TFTs or p-channel TFTs). Further, here, a TFT having one channel formation region 303 is shown; however, there is no particular limitation, and a TFT having a plurality of channels may be used.
[0060]
Reference numeral 308 denotes a first electrode, that is, an anode (or a cathode) of the OLED. The material of the first electrode 308 is Ti, TiN, TiSi _X N _Y , Ni, W, WSi _X , WN _X , WSi _X N _Y , NbN, Mo, Cr, Pt, Zn, Sn, In, or Mo, or a film mainly composed of an alloy material or a compound material containing the aforementioned element as a main component, or a laminated film of them. The thickness may be in the range of 100 nm to 800 nm. Here, a titanium nitride film is used for the first electrode 308. In the case where a titanium nitride film is used as the first electrode 308, it is preferable to increase the work function by performing ultraviolet irradiation or plasma treatment using chlorine gas on the surface.
[0061]
Further, an insulator 309 (referred to as a bank, a partition, a barrier, a bank, or the like) which covers an end portion (and the wiring 307) of the first electrode 308 is provided. As the insulator 309, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), or a mixture thereof is used. Although lamination or the like can be used, a photosensitive organic resin covered with a silicon nitride film is used here. For example, when a positive photosensitive acrylic is used as the material of the organic resin, it is preferable that only the upper end of the insulator has a curved surface having a radius of curvature. Further, as the insulator, either a negative type which becomes insoluble in an etchant by photosensitive light or a positive type which becomes soluble in an etchant by light can be used.
[0062]
The layer 310 containing an organic compound is formed by an evaporation method or an application method. Note that in order to improve reliability, degassing is preferably performed by performing vacuum heating before forming the layer 310 containing an organic compound. For example, when using a vapor deposition method, the degree of vacuum is 5 × 10 ^-3 Torr (0.665 Pa) or less, preferably 10 ^-Four -10 ^-6 Vapor deposition is performed in a film formation chamber evacuated to Pa. At the time of vapor deposition, the organic compound is vaporized in advance by resistance heating, and scatters in the direction of the substrate by opening a shutter at the time of vapor deposition. The vaporized organic compound is scattered upward and is deposited on the substrate through an opening provided in the metal mask.
[0063]
For example, Alq _Three , Alq partially doped with Nile Red which is a red light-emitting dye _Three , Alq _Three , P-EtTAZ, and TPD (aromatic diamine) are sequentially laminated by a vapor deposition method to obtain white.
[0064]
In the case where a layer containing an organic compound is formed by a coating method using spin coating, it is preferable to perform baking by vacuum heating after coating. For example, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) acting as a hole injection layer is applied to the entire surface, baked, and then the luminescent center dye (1, 1) acting as a light emitting layer 1,4,4-tetraphenyl-1,3-butadiene (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-styryl) -4H-pyran (DCM1), Nile red, coumarin 6 Etc.) A doped polyvinyl carbazole (PVK) solution may be applied to the entire surface and fired. PEDOT / PSS uses water as a solvent and does not dissolve in organic solvents. Therefore, when PVK is applied from above, there is no need to worry about re-dissolving. Since PEDOT / PSS and PVK have different solvents, it is preferable not to use the same film forming chamber. Alternatively, the layer 310 containing an organic compound can be a single layer, and a 1,3,4-oxadiazole derivative (PBD) having an electron transporting property may be dispersed in polyvinyl carbazole (PVK) having a hole transporting property. . Further, white light emission can be obtained by dispersing 30 wt% of PBD as an electron transporting agent and dispersing an appropriate amount of four kinds of dyes (TPB, coumarin 6, DCM1, and Nile Red).
[0065]
Reference numeral 311 denotes a second electrode made of a conductive film, that is, a cathode (or an anode) of the OLED. The material of the second electrode 311 is MgAg, MgIn, AlLi, CaF _Two , CaN, or an alloy, or a light-transmitting film formed by co-evaporation of aluminum and an element belonging to Group 1 or 2 of the periodic table. Here, since it is a top emission type in which light is emitted through the second electrode, an aluminum film with a thickness of 1 nm to 10 nm or an aluminum film containing a small amount of Li is used. When an Al film is used as the second electrode 311, a material in contact with the layer 310 containing an organic compound can be formed using a material other than an oxide, so that reliability of the light-emitting device can be improved. Before forming an aluminum film of 1 nm to 10 nm, CaF is used as a cathode buffer layer. _Two , MgF _Two Or BaF _Two A light-transmitting layer (1 nm to 5 nm in thickness) made of
[0066]
In order to reduce the resistance of the cathode, an auxiliary electrode may be provided over the second electrode 311 in a region which is not a light-emitting region. The cathode may be formed selectively by using a resistance heating method by evaporation and by using an evaporation mask.
[0067]
Reference numeral 312 denotes a transparent protective layer, which protects the second electrode 311 made of a metal thin film. Since the second electrode 311 is an extremely thin metal film, oxidation or the like is easily generated by contact with oxygen. If the light transmitting layer 313 is an inert substance, for example, high-purity nitrogen gas, the transparent protective layer may not always be necessary, but if other materials are used, the transparent protective layer may be formed of a substance contained in the light transmitting layer. It is effective to provide such a transparent protective layer because there is a risk of deterioration due to reaction.
[0068]
The second electrode 311 made of such a metal thin film is formed on a transparent protective layer 312, for example, CaF _Two , MgF _Two Or BaF _Two By covering with oxygen and moisture can be more effectively blocked. Also, CaF _Two , MgF _Two , BaF _Two Can be formed by an evaporation method, and by continuously forming a cathode and a transparent protective layer by an evaporation method, contamination of impurities and exposure of the electrode surface to the atmosphere can be prevented. In addition, by using an evaporation method, the transparent protective layer 312 can be formed under conditions that hardly damage the layer containing an organic compound. In addition, CaF is formed above and below the second electrode 311. _Two , MgF _Two Or BaF _Two The second electrode 311 may be further protected by providing a light-transmitting layer made of and sandwiching the layer.
[0069]
Further, the transparent protective layer may be formed not only by a vapor deposition method but also by a sputtering method. In this case, a target made of silicon or a target made of silicon oxide may be used. For example, a silicon nitride film can be formed by using a target made of silicon and setting a sputtering atmosphere to a nitrogen atmosphere or an atmosphere containing nitrogen and argon.
[0070]
In addition, a metal having no oxygen atoms (a material having a large work function) such as a titanium nitride film is used as the first electrode, and a metal having no oxygen atoms (a material having a small work function) is used as the second electrode. , For example, using an aluminum thin film, _Two , MgF _Two , BaF _Two Alternatively, by covering with SiN, the region between the first electrode and the second electrode can be maintained in an oxygen-free state as close to zero as possible.
[0071]
FIG. 3B shows a simplified stack structure in the light emitting region. Light emission is emitted in the direction of the arrow shown in FIG.
[0072]
In the case where a first electrode 318 made of a transparent conductive film is used as shown in FIG. 3C instead of the first electrode 308 made of a metal layer, light is emitted to both the upper surface and the lower surface. Can be. As a transparent conductive film, ITO (indium tin oxide alloy), indium zinc oxide alloy (In _Two O _Three -ZnO), zinc oxide (ZnO), or the like may be used.
[0073]
Next, the sealant will be described. Epoxy resin, acrylic resin, vinyl ether resin, etc. can be used as the sealant, but it is desirable to use one with low permeability to oxygen, moisture, etc. Although there is a two-part type used, both types can be used, but in consideration of workability, a UV-curable adhesive that can complete the curing reaction in at least several minutes using UV is used as the curing means. As the UV, a halogen lamp, a mercury lamp or a high-pressure mercury lamp is used to extract the UV light, and the light is guided to the panel by an optical system such as a mirror and irradiated to the sealant. The output wavelength of a halogen lamp is relatively broad, whereas a mercury lamp can obtain a strong output at a specific wavelength such as 313 nm or 365 nm. This is appropriately selected depending on the type of the reaction initiator contained in the sealant.
[0074]
It is desirable that the sealant has a large difference between the viscosity in the static state and the viscosity when shear stress is applied to the material, that is, a material having a large thixotropic property, especially if the ratio between the low viscosity state and the high viscosity state is 3 or more. It is easy to obtain a low-viscosity state due to shear stress at the time of pressing while reducing drooling. However, in the low viscosity state, the viscosity is desirably 200 Pa · s or less.
[0075]
In addition, as the sealing agent, a material containing at least one of the following materials can be used as long as it has low permeability to oxygen and moisture and satisfies the above-mentioned characteristics. Further, these plural materials may be mixed. If the material is epoxy resin, bisphenol A type liquid resin, bisphenol A type solid resin, bromide epoxy resin, bisphenol F type resin, bisphenol AD type resin, phenol type resin, cresol type resin, novolak type resin, cyclic An aliphatic epoxy resin, an epibis epoxy resin, a glycidyl ester resin, a glycidylamine resin, a heterocyclic epoxy resin, and a modified epoxy resin.
[0076]
In addition, at least one of the following materials can be used as a polymerization initiator for the sealant. The materials include aromatic diazonium salts, aromatic sulfonium salts, aromatic iodonium salts, improved sulfonium salts, and Bronsted acid. Aromatic compound salt of aluminum, aluminum complex / photodecomposable silicon compound.
[0077]
In addition, the following may be included as curing agents, the materials being aliphatic diamines, aliphatic polyamines, fatty acid polyamines including aromatics, alicyclic and cyclic amines, aromatic primary amines, aromatic tertiary amines, diamines , Modified polyamines and polyaminoamides.
[0078]
Further, at least one of the following materials may be included as long as the material has low oxygen and moisture permeability and satisfies the above-mentioned characteristics. The material is an acrylic resin, ester acrylate, ether acrylate, ester urethane acrylate, ether urethane acrylate, butadiene urethane acrylate, special urethane acrylate, epoxy acrylate, amino resin acrylate, acrylic resin acrylate, and further, as a vinyl ether resin, These are aliphatic vinyl ethers, aromatic vinyl ethers, and urethane vinyl ethers.
[0079]
A holding agent for maintaining a distance between the pair of substrates is added to the sealant. The spacing agent is also called a spacer or a filler. However, the term “filler” may be confused with an inorganic agent mixed to suppress the permeability of moisture, and thus is referred to as a spacer in this specification. A hard inorganic material such as SiO2 can be used as the material of the spacer. Further, the shape of the holding agent may be a column shape or a spherical shape having a diameter of about 2 to 20 μm. The spacer is added in an amount of about 1% by weight to the sealant.
[0080]
The sealant is applied by a dispenser device. FIG. 11 shows a syringe portion 1101 of the dispenser device and a state where a sealant 1102 is being applied from the syringe portion 1101. The syringe portion 1101 is filled with a sealant 1102. A nitrogen gas is pressurized from above the syringe, and the stage 1105 on which the opposing 1104 is mounted is moved vertically and horizontally while flowing from a syringe nozzle 1103 to a predetermined sealant pattern. To form When applying the sealant 1102, the interval between the nozzle 1103 and the opposing 1104 is generally set to 100 μm or less. In addition, the nozzle inner diameter and the stage moving speed are adjusted so that the width of the sealant becomes about 0.5 mm to 1 mm immediately after the application.
[0081]
Note that the sealant is applied to the opposite side unless there is any particular problem. This is because the substrate on which the layer containing the organic compound is to be formed has its film-forming surface facing down (face down) in the vapor deposition apparatus and the process proceeds. This is because if the seal is applied to the side, the process can be shifted to the bonding process with the face up.
[0082]
In addition, since the seal pattern described in the present embodiment has a simple shape, the sealant 32 can be formed by a printing method.
[0083]
Next, the substrate on which the layer containing the organic compound is formed is bonded to the opposite side coated with the sealant. FIG. 15 shows an apparatus having a mechanism for performing bonding. This portion is referred to as a sealing chamber 1507. Usually, a mechanism for transporting the substrate is provided so that the process can be continuously performed from an apparatus having a mechanism for forming a layer containing an organic compound. The devices are connected to each other.
[0084]
The bonding step is performed in an inert atmosphere, for example, a nitrogen gas atmosphere. After the substrate is transported to the sealing chamber 1507, the substrates 1503 and 1502 are arranged with the substrate 1503 and the facing 1504, and after the alignment operation facing the substrate is performed. Then, the substrate 1503 and the facing 1504 are bonded together by approaching the surface plate. When the substrate 1503 and the facing 1504 are in contact with each other, the substrate 1503 is pressed for a certain period of time to cure the sealant 1506, and the substrate and the facing are integrated into a panel. A UV irradiation mechanism 1505 is provided at a place where the bonding process is performed, and UV irradiation is performed from the opposite side (lower side). The light source of the UV irradiation mechanism uses a metal halide lamp. In addition, at the time of UV irradiation, it is possible to use a light shielding mask (not shown) and selectively apply UV irradiation only to the sealant portion.
[0085]
After the panel thus completed is taken out of the apparatus, it is scribed and processed into a panel shape as necessary.
[0086]
Here, the characteristics of the sealant of the present embodiment will be described. FIG. 8 shows a time change of the uncured sealant width after the sealant is applied to the dispenser device to face each other. It can be seen that the sealant (A) shown in this embodiment has almost no change in the sealant width even when left for 2 hours. On the other hand, in the conventional sealant (B), the width of the seal keeps increasing gradually with time.
[0087]
Further, FIG. 9 shows a change in the adhesive strength when the sealant is stored at a high temperature and a high humidity (temperature: 65 ° C., humidity: 95%). The sealant shown in this embodiment showed almost no change in the adhesive strength even after being stored for a long time of 1000 hours. On the other hand, it was found that the adhesive strength of the conventional sealant decreases as the standing time increases.
[0088]
Here, the method for measuring the adhesive strength of the sealant shown in the present embodiment is shown in FIG. In this method, a sealant 1003 is disposed between two glass substrates 1001 and 1002, and the maximum value of the peeling strength when the substrates are peeled from each other is determined as the adhesive strength. First, a sealant 1003 is dispensed on one substrate so as to have a length of 4 mm and a width of 2 mm, and is bonded to the other substrate. When the sealant is cured by UV irradiation or the like, as shown in (A), the rectangular glass is scribed in a cross-like shape. Next, both ends of one substrate 1002 are fixed to a stage with tape or the like. Next, the tip portion 1005 of the push-pull gauge 1004 is pressed against one end of the other substrate to peel the substrate. At this time, the distance between the push-pull gauge and the substrate is changed at a constant speed. If the push-pull gauge is set so that the maximum strength is stored and displayed, the maximum strength applied when the two substrates are peeled off is obtained. Since the adhesive strength depends on the area of the seal, it is determined as the strength per unit area.
[0089]
FIG. 14 shows a micrograph of the sample stored at high temperature and high humidity. Looking at the state after the destructive test, in the sealant (A) shown in the present embodiment, the seal is distributed evenly as a whole, and there is no place where the seal is missing in any part. There was almost no seal on the substrate depending on the location, and many missing parts were observed.
[0090]
(Embodiment 2)
FIG. 4 shows an example in which a plurality of pixel portions are formed on one substrate, that is, an example in which a plurality of pixels are formed.
[0091]
Here, an example in which four panels are formed using one substrate is described.
[0092]
First, a sealant 402 is formed at a predetermined position on a facing 401 in an inert gas atmosphere by a dispenser device. (FIG. 4A)
[0093]
Next, the first substrate provided with the pixel portion 34 and the substrate provided with the sealant are attached to each other. (FIG. 4B) Note that it is preferable to perform degassing by performing annealing in a vacuum immediately before attaching the pair of substrates with a sealant. Next, ultraviolet rays are irradiated to cure the sealant 32. Note that heat treatment may be performed in addition to ultraviolet irradiation.
[0094]
Next, a scribe line 35 indicated by a chain line is formed using a scriber device. (FIG. 4C) The scribe line 35 may be formed along the first sealant.
[0095]
Next, the substrate is cut using a breaker device. (FIG. 4D) Thus, four panels can be manufactured from one substrate.
[0096]
This embodiment can be freely combined with Embodiment 1.
[0097]
The present invention having the above configuration will be described in more detail with reference to the following embodiments.
[0098]
【Example】
[Example 1]
In this embodiment, FIG. 5 illustrates an example of a light-emitting device including a light-emitting element in which a layer containing an organic compound is used as a light-emitting layer.
[0099]
Note that FIG. 5A is a top view illustrating the light-emitting device, and FIG. 5B is a cross-sectional view of FIG. 5A taken along AA ′. 501 shown by a dotted line is a source signal line driving circuit, 502 is a pixel portion, and 503 is a gate signal line driving circuit. Reference numeral 504 denotes an opposing member, 505 denotes a sealant, and 525 denotes a spacer.
[0100]
Note that reference numeral 508 denotes wiring for transmitting signals input to the source signal line driver circuit 501 and the gate signal line driver circuit 503, and a video signal or a clock signal from an FPC (flexible printed circuit) 509 serving as an external input terminal. receive. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only the light-emitting device body but also a state in which an FPC or a PWB is attached thereto.
[0101]
Next, a cross-sectional structure is described with reference to FIG. Although a driver circuit and a pixel portion are formed over the substrate 510, a source signal line driver circuit 501 and a pixel portion 502 are shown here as the driver circuits.
[0102]
Note that as the source signal line driver circuit 501, a CMOS circuit in which an n-channel TFT 523 and a p-channel TFT 524 are combined is formed. Further, the TFT forming the driver circuit may be formed by a known CMOS circuit, PMOS circuit, or NMOS circuit. Further, in this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown.
[0103]
The pixel portion 502 is formed of a plurality of pixels including a switching TFT 511, a current control TFT 512, and a first electrode (anode) 513 electrically connected to a drain thereof.
[0104]
Here, since the first electrode 513 is in direct contact with the drain of the TFT, the lower layer of the first electrode 513 is a material layer which can make ohmic contact with the drain made of silicon, and has a layer containing an organic compound. It is desirable to form a material layer having a large work function on the surface in contact. For example, with a three-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film, resistance as a wiring is low, good ohmic contact can be obtained, and the electrode can function as an anode. . Further, the first electrode 513 may be a single layer of a titanium nitride film or a stacked layer of three or more layers.
[0105]
In addition, an insulator (referred to as a bank, a partition, a barrier, a bank, etc.) 514 is formed at both ends of the first electrode (anode) 513. The insulator 514 may be formed using an organic resin film or an insulating film containing silicon. Here, as the insulator 514, an insulator having a shape illustrated in FIG. 5 is formed using a positive photosensitive acrylic resin film. Alternatively, the insulator 514 may be covered with a protective film formed using an aluminum nitride film, an aluminum nitride oxide film, or a silicon nitride film. This protective film is an insulating film mainly containing silicon nitride or silicon nitride oxide obtained by a sputtering method (DC method or RF method), or a thin film mainly containing carbon. When a silicon target is formed in an atmosphere containing nitrogen and argon, a silicon nitride film can be obtained. Further, a silicon nitride target may be used. Further, the protective film may be formed using a film forming apparatus using remote plasma. In addition, in order to allow light to pass through the protective film, the thickness of the protective film is preferably as small as possible.
[0106]
Further, a layer 515 containing an organic compound is selectively formed over the first electrode (anode) 513 by an evaporation method using an evaporation mask or an inkjet method. Further, a second electrode (cathode) 516 is formed over the layer 515 containing an organic compound. Thus, a light-emitting element 518 including the first electrode (anode) 513, the layer 515 containing an organic compound, and the second electrode (cathode) 516 is formed. Here, since the light-emitting element 518 is an example of emitting white light, a color filter including a colored layer 531 and a BM 532 (an overcoat layer is not illustrated here for simplicity) is provided.
[0107]
Next, a multi-chamber manufacturing apparatus for the purpose of producing the above-described organic light-emitting device will be described. In this manufacturing apparatus, a substrate in which a thin film transistor, an anode (first electrode), an insulator covering the end of the anode, and the like are provided in advance and a process such as film formation is continuously performed is performed. The sealing process is performed by integrating with the opposing counterpart charged separately to complete the panel.
[0108]
FIG. 6 shows gates 600a to 600w, transfer chambers 601, 602, 603, 604, and 605 (a transfer robot for transferring a substrate is installed in each transfer chamber), a charging chamber 611, and a transfer chamber. 612, 613, 614, cassette chambers 620a, 620b, tray mounting stage 621, film forming chamber 622, substrate heating chamber 623, substrate / mask stock chamber 624, pretreatment chamber 625, substrate heating chamber 626 A deposition chamber 627Ha / 627Ra / 627Ga / 627Ga / 627Ga / 627Ea; a pre-deposition chamber 627Hb / 627Rb / 627Gb / 627Bb / 627Eb where a deposition source is installed; a deposition chamber 628/629; a sputtering chamber 630/631; N2 replacement room 632 for opposing glass, glove BOX 633, preparation room 634, substrate / opposition stock room 635, sealing room 63 When a multi-chamber manufacturing apparatus having a take-out chamber 637, a.
[0109]
A method of loading a substrate into the manufacturing apparatus will be described. The cassette containing the substrates is loaded into the cassette chamber 620a or 620b. This manufacturing apparatus utilized an apparatus capable of handling substrates of two different sizes. When the substrate to be handled is a large substrate (300 mm × 360 mm in this embodiment), a large cassette containing large substrates is put into the cassette chamber 620b. When the substrate to be handled is a small substrate (126.6 mm × 126.6 mm in the present embodiment), a small cassette containing the small substrate is put into the cassette chamber 620a, and a plurality of small substrates (4 in this embodiment). The cassette chamber 620b stores a tray cassette (in this embodiment, four stages) in which substrate trays (in this embodiment, 300 mm × 360 mm, which is the same size as a large substrate) to be mounted and transported are stored. To Thus, both the large cassette and the tray cassette can be installed in the cassette chamber 620b. In addition, the orientation of the large substrate and the small substrate at the time of loading is face-up (the surface on which a film is formed in a later step is upward).
[0110]
A method of putting a metal mask into the manufacturing apparatus will be described. A total of 10 metal masks to be used in the pre-processing chamber 625, the vapor deposition chambers 627Ha, 627Ra, 627Ba, 627Ga, and 627Ea, the vapor deposition chambers 628 and 629, and the sputtering chambers 630 and 631 are set in the substrate / mask stock chamber 624. .
[0111]
A method of facing the production apparatus will be described. When the substrate is a large substrate (300 x 360 mm), a large counter of the same size as the substrate is stored in the same large cassette as that used in the cassette chamber 620b, and up to two sets are set in the N2 replacement chamber 632 for the opposing glass. I do. When the board is a small board (126.6 mm x 126.6 mm), multiple small counters of a size slightly smaller than the board (in this example, 122.6 mm x 122.6 mm, which is smaller than the board by 2 mm on the outer circumference) are mounted. The one mounted on an opposing tray (300 × 360 mm in this embodiment) that can be used (four sheets in this embodiment) is stored in the same tray cassette used in the cassette chamber 620b, and It is set in the N2 replacement chamber 632. In both large-sized and small-sized facing, the orientation at the time of loading and subsequent processing is face-up (the surface that comes into contact with the substrate when bonded to the substrate later is the upper side).
[0112]
Hereinafter, a method of processing a substrate will be described in order.
[0113]
The transfer chamber 601 is always at N2 atmosphere and atmospheric pressure, and a transfer robot (having a substrate suction mechanism) installed in the N2 atmosphere goes to pick up the substrate. In the case of a large substrate, the substrate is taken out from the cassette chamber 620b and transported to the preparation chamber 611. In the case of a small substrate, the tray is taken out from the cassette chamber 620b and transported to the tray mounting stage 621. Then, the small substrate is taken out from the cassette chamber 620a, transported to the tray mounting stage 621, and mounted on the tray (in this embodiment, a maximum of four). After that, the tray containing the large or small substrate is carried into the preparation room 611. After this point, the orientation of the substrate is face-down (the surface on which a film is formed in a later step is on the lower side).
[0114]
As described above, in the present manufacturing apparatus, four substrates are processed simultaneously for a small substrate, and thus it can be said that the throughput for the small substrate is extremely high. Hereinafter, unless otherwise specified, only processing for a large substrate will be described, and a large substrate will be simply described as a substrate, but the same applies to processing for a small substrate.
[0115]
Further, since the preparation chamber 611 is connected to the transfer chamber 602 which is always kept in a vacuum, after loading the substrate, the substrate is exhausted and then the substrate is transferred to the transfer chamber 602. After the substrate is unloaded, an inert gas may be introduced into the charging chamber 611 to return to the atmospheric pressure (vent), and the substrate may be prepared for the transport of the substrate flowing from the transfer chamber 601.
[0116]
A magnetically levitated turbo molecular pump, a cryopump, or a dry pump is provided as a vacuum pump for the transfer chamber 601 and other processing chambers capable of vacuum evacuation. ^-Five ~Ten ^-6 It is possible to set the pressure to Pa, and it is possible to control the reverse diffusion of impurities from the pump side and the exhaust system. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as a gas to be introduced. These gases introduced into the apparatus are those that have been highly purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the vapor deposition device after being highly purified. Accordingly, oxygen, water, and other impurities contained in the gas can be removed in advance, so that introduction of these impurities into the device can be prevented.
[0117]
Before the substrate is transferred to the preparation chamber, a hole injection layer made of a polymer material may be formed in the film formation chamber 612 by an inkjet method, a spin coating method, or the like. A poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS), a polyaniline / camphorsulfonic acid aqueous solution (PEDOT / PSS) acting as a hole injection layer (anode buffer layer) on the first electrode (anode) PANI / CSA), PTPDES, Et-PTPDEKE, or PPBA may be applied to the entire surface and fired. In the case of baking, after the film is formed in the film formation chamber 622, the substrate may be transferred to the substrate heating chamber 623, and if necessary, the substrate heating chamber 623 may be evacuated and then heated. When a hole injection layer made of a polymer material is formed by a coating method using spin coating or the like, the flatness is improved, and the coverage and uniformity of the film formed thereon are improved. be able to. In particular, since the thickness of the light emitting layer becomes uniform, uniform light emission can be obtained. In this case, after the hole injection layer is formed by the coating method, it is preferable to perform vacuum heating (100 to 200 ° C.) immediately before forming the film by the vapor deposition method. This can be performed in the substrate heating chamber 623, the pretreatment chamber 625, the substrate heating chamber 626, or the like. For example, after the surface of the first electrode (anode) is washed with a sponge, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) is coated on the entire surface with a film thickness of 60 nm and 80 by a spin coating method. Temporary baking at 10 ° C for 10 minutes, main baking at 200 ° C for 1 hour, and vacuum heating (170 ° C, heating 30 minutes, cooling 30 minutes) immediately before vapor deposition, and then emit light by vacuum vapor deposition without exposure to air A layer may be formed. In particular, when irregularities or fine particles are present on the surface of the ITO film, these effects can be reduced by increasing the thickness of PEDOT / PSS.
[0118]
In addition, PEDOT / PSS has poor wettability when applied on an ITO film, so after applying the PEDOT / PSS solution for the first time by spin coating, it is washed once with pure water to improve wettability. Then, it is preferable that the PEDOT / PSS solution is applied again by the spin coating method for the second time, followed by baking to form a film with good uniformity. After the first application, the surface can be modified by once washing with pure water, and the effect of removing fine particles can be obtained.
[0119]
Also, in the case of film formation by spin coating, PEDOT / PSS is applied to the entire surface, so it is necessary to selectively remove PEDOT / PSS from the end face, peripheral edge, terminal area, connection area between cathode and lower wiring of substrate, etc. There is. This removal can be performed by ashing using O2 plasma or the like in a pretreatment chamber 625 using a metal mask. In this embodiment, the pretreatment chamber 625 is provided with two gas inlets whose flow rates can be controlled by a mass flow controller (MFC), so that up to two types of gas inlets selected from Ar, H, F, and O are provided. Dry etching can be performed by exciting gas to generate plasma (Ar + O2 plasma treatment, etc.). At this time, by using a metal mask at the same time, it is possible to hide a region where plasma irradiation is not desired. The alignment between the substrate and the mask may be performed through marker recognition by a CCD camera.
[0120]
By the way, in the light emitting element after completion, a shrink phenomenon that the luminance is deteriorated from the periphery of the pixel in the display pixel may be observed. One of the preventive measures is vacuum heating immediately before the deposition of a film containing an organic compound. This can be performed by a heater (such as a sheath heater) provided in the pretreatment chamber 625 or the substrate heating chamber 626. In order to thoroughly remove moisture and other gases contained in the above substrate, annealing for degassing is performed in a vacuum (5 × 10 ^-3 torr (0.665Pa) or less, preferably 10 ^-Four ~Ten ^-6 Pa). In particular, when an organic resin film is used as a material for an interlayer insulating film or a partition, moisture is easily absorbed depending on the organic resin material, and further degassing may occur. Therefore, before forming a layer containing an organic compound, After heating at 100 ° C. to 250 ° C., preferably 150 ° C. to 200 ° C., for example, for 30 minutes or more, it is effective to perform natural heating for 30 minutes to perform vacuum heating for removing adsorbed moisture.
[0121]
However, since the required heating and cooling times are long, the throughput is significantly reduced when the substrate is continuously flowed. Therefore, the substrate heating chamber 626 has multiple stages. In this embodiment, the substrate heating in the pre-processing chamber 625 (the sheath heater is employed to make the temperature distribution in the substrate surface uniform) is a maximum of one at a time, whereas the substrate heating chamber 626 is a four-stage elevator. Due to the structure, up to four substrates can be heated at the same time, and the processing time is greatly reduced. Further, in this embodiment, since five stages of sheath heaters are provided in the substrate heating chamber 626, that is, one stage more than the number of stages of the substrate, heating is performed from both sides of the substrate in exactly the same manner regardless of the stage in which the substrate is stored. I can do it. The heated substrate may be transferred to the substrate / mask stock chamber 624, where it may be cooled. By this processing, the next substrate can be quickly carried into the empty stage of the substrate heating chamber 626, and as a result, the processing time is reduced.
[0122]
Next, after performing the above-described vacuum heating, the substrate is transferred from the transfer chamber 602 to the deposition chamber 627Ha to perform vacuum deposition to form a hole injection layer or a hole transport layer. Next, the substrate is transferred from the transfer chamber 602 to the transfer chamber 603, which is always kept in vacuum, via the delivery chamber 612, which is always kept in vacuum.
[0123]
Thereafter, the substrate is appropriately transferred to the evaporation chambers 627Ra, 627Ga, 627Ba, and 627Ea connected to the transfer chamber 603, and organic layers such as a red light emitting layer, a green light emitting layer, a blue light emitting layer, an electron transport layer, and an electron injection layer are removed. It is formed by a vacuum deposition method.
[0124]
By appropriately selecting the EL material used in the evaporation chambers 627Ha, 627Ra, 627Ga, 627Ba, and 627Ea, a light-emitting element that emits a single color (for example, white) or full-color (red, green, and blue) can be obtained. Can be formed.
[0125]
After the layers containing the organic compound are appropriately laminated by the above-described steps, the substrate is transferred from the transfer chamber 603 to the transfer chamber 604 which is constantly kept in vacuum via the delivery chamber 613 which is always kept in vacuum.
[0126]
Next, the substrate is appropriately transferred to the evaporation chamber 628 and the evaporation chamber 629, and an electron injection layer and a cathode are formed. These are composed of inorganic films formed by a vacuum deposition method using resistance heating. For example, an electron injection layer (typically an oxide or fluoride of an alkali metal or an alkaline earth metal, typically LiF) is deposited in a deposition chamber 628, and a cathode (a single metal represented by Al) is sequentially deposited in a deposition chamber 629. Can be formed. In addition, without providing an electron injection layer, a single layer made of an alloy such as AlLi, MgAg, or MgIn or a conductive compound such as MgN or CaN, or Al: Li, Mg: Ag in the evaporation chamber 628 or the evaporation chamber 629. The cathode may be a single layer formed by co-evaporation of two kinds of metals.
[0127]
Further, the cathode can be formed by a sputtering method instead of the vacuum evaporation method. In this case, the substrate may be appropriately transferred to the sputtering chamber 630 and the sputtering chamber 631. For example, instead of forming Al in the evaporation chamber 628 or 629, Al can be formed in the sputtering chamber 630 or the sputtering chamber 631 by a sputtering method. When the cathode is desired to be a transparent electrode, a transparent conductive film typified by ITO (indium oxide: tin oxide alloy) may be formed in the sputtering chamber 630 or the sputtering chamber 631 by a sputtering method.
[0128]
Finally, in the sputtering chamber 630 or the sputtering chamber 631, it is preferable to form a protective film made of a silicon nitride film or a silicon nitride oxide film. In the case of the above example, sputtering may be performed using a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride. For example, a silicon nitride film can be formed by using a target made of silicon and performing sputtering by setting the atmosphere in the sputtering chamber 631 to a nitrogen atmosphere or an atmosphere containing nitrogen and argon. Through the above steps, a light-emitting element having a stacked structure is formed.
[0129]
Next, the substrate on which the light-emitting elements are formed is transferred from the transfer chamber 604 to the delivery chamber 614 without opening to the atmosphere. Further, the wafer is transferred from the delivery room 614 to the substrate / opposite stock room 635 via the transfer room 605. The substrate / opposite stock room 635 is a room for temporarily storing the substrate and the opposition, and has a multi-stage elevator structure. Each stage is used for both the substrate and the counter. In the present embodiment, the elevator structure has 24 stages. In the case of a large substrate or a large counter, a part of the input substrate and the counter is used. In the case of a small substrate or a small counter, the input substrate (tray) and the counter (tray) are used. ) Can all be stored. Therefore, if there is no empty step in the substrate / opposite stock chamber 635, the substrate may be kept in the delivery chamber 614 until an empty step is formed. Further, a gate or the like for partitioning is not particularly provided between the substrate / opposite stock chamber 635 and the transfer chamber 605, and the substrate / opposite stock chamber 635 is integrated with the transfer chamber 605 as a space.
[0130]
In addition, the transfer chamber 605 needs to be sufficiently evacuated in advance before flowing the lot in order to remove moisture, oxygen, and the like as much as possible in advance. When transferring the substrate to the transfer chamber 605, the delivery chamber 614 needs to be vented. After the substrate is transferred to the transfer chamber 605, the delivery chamber 614 is evacuated again so that the next substrate can be transferred from the transfer chamber 604. That is, the delivery chamber 614 repeats the exhaust / vent every time the substrate passes.
[0131]
Hereinafter, the facing processing method will be described in order. Hereinafter, unless otherwise specified, only the processing for the large counter substrate is described, and the large counter substrate is simply described as counter.
[0132]
After performing at least once (in this embodiment, three times) the process of exhausting and venting the N2 substitution chamber 632 for opposed glass, the opposed glass is transported to the glove BOX 633. By performing the exhaust / vent process at least once, the water concentration and oxygen concentration in the glove BOX are kept as low as possible.
[0133]
In the glove BOX 633, pretreatment (preparation of a desiccant and a sealant) for facing is performed. First, it is preferable to introduce a desiccant, which plays a role of absorbing moisture inside and outside the panel and suppressing deterioration of the panel after bonding the substrates provided with the light-emitting elements. In this embodiment, it is assumed that a counterbore portion is provided in advance and a desiccant is attached to the counterbore portion. Note that the counterbore portion was provided in the peripheral portion of the driving circuit so as to avoid the pixel region. This is because, when the counterbore portion comes directly above the pixel area, the counterbore portion and the desiccant prevent light extraction. The sticking operation is manually performed by a first glove (not shown) installed in the glove BOX. Also, the desiccant may be prepared in the glove BOX 633 from the outside in advance before flowing the lot through the N2 substitution chamber 632 for facing glass. After the drying agent is applied, the substrate is automatically transferred to the seal dispenser.
[0134]
Using a seal dispenser, a sealant to be finally attached to the substrate provided with the light-emitting element is applied to face the substrate. A second glove (not shown) for manually performing various adjustments of the seal dispenser is installed in the seal dispenser unit in advance. In addition, the sealing agent may be prepared in the glove BOX 633 from the outside in advance before flowing the lot through the N2 substitution chamber 632 for facing glass, similarly to the desiccant.
[0135]
Further, the sealing agent 505 bonds the facing 504 and the substrate 510 together. As the sealant 505, an ultraviolet-curable or heat-curable epoxy resin is typically used. Here, as the characteristics at 25 ° C., a highly heat-resistant UV epoxy resin having a viscosity of 46 Pa · s (10 rpm), 151.8 Pa · s (1 rpm), a specific gravity of 1.37, and a thixotropy index of 3.3 is used. The sealant 505 includes a spacer (8.8 μm in diameter).
[0136]
The parameter settings of the seal dispenser when applying the sealant were as follows. The distance between the substrate and the nozzle was 50 μm, the inner diameter of the nozzle was 0.5 mm, the seal width immediately after dispensing was 0.7 mm, and the stage feed speed during drawing was 20 mm / s. As a result, the sealing agent could form a pattern without disconnection in the middle. After the application of the sealant, the facing is automatically transferred to the preparation room 634.
[0137]
After the processing of exhausting and venting the preparation chamber 634 is performed once or more (in this embodiment, twice), the preparation chamber 634 is finally vented once again. Thereafter, the opposing member is transferred from the preparation room 634 through the transfer chamber 605 to the substrate / counter stock room 635. However, when there is no empty stage in the substrate / opposite stock chamber 635, the opposing may be made to stand by in the preparation room 634 until an empty stage is formed.
[0138]
Hereinafter, the process of bonding the substrate temporarily opposed to the substrate temporarily stored in the substrate / opposite stock chamber 635 will be described.
[0139]
The substrate and the counter are transferred from the substrate / counter stock chamber 635 to the sealing chamber 636 via the transfer chamber 605. The dew point temperature of the sealing chamber is kept at -85C. Then, after performing an alignment operation opposing the substrate, the opposing substrate is bonded and pressed. The stage moving speed until the substrate comes into contact with the opposing substrate is 20 mm / s. After the substrate comes into contact with the opposing substrate, the press setting pressure when the two substrates are superposed is 48 kgf, and the holding time of the superposition is 60 sec. is there. Thereafter, the sealant is cured to form an integrated panel facing the substrate. In this embodiment, the sealing agent is a UV curing resin, and a UV irradiation mechanism is installed in the sealing chamber 636. UV irradiation is performed from the opposite side (lower side). A metal halide lamp was used as a light source of the UV irradiation mechanism. The irradiation intensity is 6 J / cm2. The irradiation time is 90 seconds. In addition, at the time of UV irradiation, it is possible to selectively apply UV irradiation only to the sealant using a light shielding mask. In this embodiment, the light-shielding mask is formed by depositing a Cr film on quartz glass, and cannot be transferred by the transfer robot in the transfer chamber. And
[0140]
The panel thus completed is transferred to the extraction chamber 637 via the transfer chamber 605. A large cassette or a tray cassette used in the cassette chamber 620b and the N2 replacement chamber 632 for facing glass can be set in the unloading chamber. Which of the two can be set can be selected by changing the setup of the unloading chamber 637. is there. After all the loaded substrates and the facing process are completed, the panels housed in the cassette may be taken out of the take-out chamber.
[0141]
Note that in the case of bonding of a small substrate and a small opposing surface, the mechanism is slightly complicated, so that the description will be made with reference to FIG. At the time of these sealings, it is necessary to make the substrate tray 1201 on which the small substrate is mounted and the tray 1202 on which the small counter is mounted come into contact with each other (FIG. 12A). The substrate tray 1201 is provided with a clamp 1203 for positioning and fixing a small substrate, and this portion protrudes. Therefore, it becomes an obstacle when bonding with the opposing tray 1202 containing the small opposing 1205. Therefore, a clamp escape portion 1204 for releasing the clamp is provided in the small opposing tray 1202. Therefore, the size of the small facing 1205 is set to be slightly smaller than that of the small substrate 1206 (in this embodiment, the outer circumference is 2 mm). In addition, the suction / press plate 1207 for sucking and pressing the substrate has irregularities in accordance with the structure of the substrate tray 1201, and the projections of the suction / press plate 1207 make the counterbore of the substrate tray 1201 at the time of bonding. Into contact with the back surface of the substrate 1206 (the side opposite to the film formation surface). Further, the light-shielding mask 1208 also has irregularities in conformity with the structure of the opposing tray 1202, and the projections 1209 (Cr-coated surface) of the light-shielding mask 1208 enter the counterbore portion of the opposing tray 1202 during UV irradiation, (Opposite the sealant application surface). After completion of the sealing process, the object to be transported is a completed panel (Fig. B) in which the small panel, the substrate tray, and the opposing tray are integrated. This is transported to the extraction chamber 137 via the transport chamber 105. In this embodiment, two completed panels are stored for each tray cassette in the unloading chamber 137, so that a total of eight completed panels are stored for four tray cassettes. Since the weight of the tray cassette is about 5 kg and the weight of the substrate tray and opposing tray is about 1 kg, storing four completed panels in one tray cassette results in a total weight of about 15 kg, making removal work difficult. Become. By storing two completed panels per tray cassette, the total weight is kept below 10 kg.
[0142]
On the other hand, when bonding a large substrate and a large counter, both the suction / pressing plate and the light shielding mask should be flat. In other words, these need to be changed according to the size of the substrate to be flowed and the size of the facing substrate.
[0143]
Further, after the panel bonding step was completed and the panel was taken out, the panel was held at a temperature of 80 ° C. for 1 hour in order to accelerate the curing reaction of the sealant. By using the present manufacturing apparatus in this manner, a highly reliable light-emitting device can be manufactured.
[0144]
In this embodiment, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), mylar, polyester, acrylic, or the like is used as a material of the sealing substrate 1104 in addition to a glass substrate or a quartz substrate. be able to. After the sealing substrate 1104 is bonded using the first sealing agent 1105 and the second sealing agent 1107, the sealing substrate 1104 can be sealed with a third sealing agent so as to further cover the side surface (exposed surface).
[0145]
This embodiment can be freely combined with any one of Embodiment Modes 1 and 2.
[0146]
[Example 2]
In this embodiment, an example different from the cross-sectional structure shown in Embodiment Mode 2 is shown in FIG.
[0147]
7A, 700 is a substrate, 701a and 701b are insulating layers, 702 is a TFT, 709 is an insulator, 710 is an EL layer, 711 is a second electrode, 712 is a transparent protective layer, and 713 is a light transmitting layer. , 714 are opposing.
[0148]
A TFT 702 (p-channel TFT) provided over the substrate 700 is an element for controlling a current flowing through the EL layer 710 that emits light, and 704 is a drain region (or a source region). Although not shown here, one pixel is provided with one or more TFTs (n-channel TFTs or p-channel TFTs). Further, here, a TFT having one channel formation region 703 is shown; however, there is no particular limitation, and a TFT having a plurality of channels may be used.
[0149]
In the structure illustrated in FIG. 7A, first electrodes 708a to 708c each including a stack of metal layers are formed, and an insulator (referred to as a bank or a partition) 709 covering an end portion of the first electrode is formed. After the formation, etching is performed in a self-aligned manner using the insulator 709 as a mask, a part of the insulator is etched, and a central portion of the first electrode is thinly etched to form a step at an end portion. By this etching, the central portion of the first electrode is made thin and flat, and the end portion of the first electrode covered with the insulator is made thick, that is, a concave shape. Then, a layer 710 containing an organic compound and a second electrode 711 are formed over the first electrode, whereby a light-emitting element is completed.
[0150]
In the structure illustrated in FIG. 7A, light emitted in a horizontal direction is reflected or converged on a slope formed at a step portion of the first electrode, and is extracted in one direction (a direction passing through the second electrode). This is to increase the amount of light emission.
[0151]
Therefore, the slope portion 708b is preferably made of a material mainly containing a metal that reflects light, for example, aluminum, silver, or the like, and the central portion 708a in contact with the layer 710 containing an organic compound is provided with an anode having a large work function. It is preferable to use a material or a cathode material having a small work function. Since a wiring 707 such as a power supply line or a source wiring is formed at the same time, a material having low resistance is preferably selected.
[0152]
In addition, the inclination angle (also referred to as a taper angle) of the inclined surface toward the center of the first electrode is preferably more than 50 °, less than 60 °, and more preferably 54.7 °. The angle of inclination, the material and film thickness of the organic compound layer, or the material and film of the second electrode are appropriately adjusted so that the light reflected on the inclined surface of the first electrode is not dispersed between the layers or becomes stray light. It is necessary to set the thickness.
[0153]
In this embodiment, a stack of a titanium film (60 nm) and a titanium nitride film (100 nm thick) is used as 708a, an aluminum film (350 nm) containing a small amount of Ti is used as 708b, and a titanium film (100 nm) is used as 708c. This 708c protects the 708b and prevents hillock generation and alteration of the aluminum film. Further, a titanium nitride film may be used as 708c to provide a light-shielding property to prevent reflection of the aluminum film. Further, although a titanium film is used as a lower layer of 708a to obtain a good ohmic contact with 704 made of silicon as 708a, other metal films may be used without particular limitation. 708a may be a single layer of a titanium nitride film.
[0154]
In this embodiment, since a titanium nitride film is used as an anode, it is necessary to perform a UV treatment or a plasma treatment. However, when the 708b and 708c are etched, a plasma treatment is simultaneously performed on the surface of the titanium nitride film. And a sufficient work function can be obtained.
[0155]
Ni, W, WSi may be used as an anode material instead of the titanium nitride film. _X , WN _X , WSi _X N _Y , NbN, Mo, Cr, Pt, Zn, Sn, In, or Mo, or a film mainly composed of an alloy material or a compound material containing the aforementioned element as a main component, or a laminated film of them. The thickness may be in the range of 100 nm to 800 nm.
[0156]
In the structure illustrated in FIG. 7A, since etching is performed in a self-aligned manner using the insulator 709 as a mask, the number of masks does not increase, and the total number of masks and steps is small, and the top emission light-emitting device is used. Can be produced.
[0157]
FIG. 7B illustrates a structure different from that in FIG. In the structure in FIG. 7B, the number of masks is increased by using the insulating layer 801c as an interlayer insulating film and providing the first electrode and the drain electrode (or the source electrode) in different layers; This is a structure that can increase the area.
[0158]
7B, reference numeral 800 denotes a substrate, 801a, 801b, and 801c denote insulating layers, 802 denotes a TFT (p-channel TFT), 803 denotes a channel formation region, 804 denotes a drain region (or source region), and 805 denotes a gate electrode. , 806 is a train electrode (or source electrode), 807 is a wiring, 808 is a first electrode, 809 is an insulator, 810 is an EL layer, 811 is a second electrode, 812 is a transparent protective layer, and 813 is a second protective layer. The sealant 814 is facing.
[0159]
In addition, when a transparent conductive film is used for the first electrode 808, a double-sided light-emitting device can be manufactured.
[0160]
This embodiment can be freely combined with any one of Embodiment Modes 1 and 2 and Embodiment 1.
[0161]
[Example 3]
By implementing the present invention, all electronic devices incorporating modules having a layer containing an organic compound (active matrix EL module, passive matrix EL module) are completed.
[0162]
Such electronic devices include video cameras, digital cameras, head-mounted displays (goggle-type displays), car navigation systems, projectors, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, e-books, etc.). No. Examples of these are shown in FIGS.
[0163]
FIG. 16A illustrates a personal computer, which includes a main body 1601, an image input portion 1602, a display portion 1603, a keyboard 1604, and the like.
[0164]
When a module having a structure that can emit light from both sides is used as a module having a layer containing an organic compound, an image can be formed just behind the display unit. For example, in FIG. 16A, even when the display unit 1603 and the keyboard 1604 of the personal computer are folded and closed, the operation state of the personal computer can be displayed on the back display unit 1625, so that the display unit 1603 is not bothersome. It is also possible with a simple check.
[0165]
FIG. 16B illustrates a video camera, which includes a main body 1605, a display portion 1606, an audio input portion 1607, operation switches 1608, a battery 1609, an image receiving portion 1610, and the like.
[0166]
FIG. 16C illustrates a mobile computer (mobile computer), which includes a main body 1611, a camera portion 1612, an image receiving portion 1613, operation switches 1614, a display portion 1615, and the like.
[0167]
FIG. 16D illustrates a player using a recording medium on which a program is recorded (hereinafter, referred to as a recording medium), and includes a main body 1616, a display portion 1617, a speaker portion 1618, a recording medium 1619, operation switches 1620, and the like. This player uses a DVD (Digital Versatile Disc), a CD, or the like as a recording medium, and can perform music appreciation, movie appreciation, games, and the Internet.
[0168]
FIG. 16E illustrates a digital camera, which includes a main body 1621, a display portion 1622, an eyepiece portion 1623, operation switches 1624, an image receiving portion (not shown), and the like.
[0169]
FIG. 17A illustrates a mobile phone, which includes a main body 1701, an audio output unit 1702, an audio input unit 1703, a display unit 1704, operation switches 1705, an antenna 1706, an image input unit (CCD, image sensor, and the like) 1707, and the like.
[0170]
FIG. 17B illustrates a portable book (electronic book), which includes a main body 1708, display portions 1709 and 1710, a storage medium 1711, operation switches 1712, an antenna 1713, and the like.
[0171]
FIG. 17C illustrates a display, which includes a main body 1714, a support base 1715, a display portion 1716, and the like.
[0172]
Incidentally, the display shown in FIG. 11C is of a small, medium or large size, for example, a screen size of 5 to 20 inches. Further, in order to form a display portion having such a size, it is preferable to use a substrate having a side of 1 m and mass-produce it by performing multi-paneling.
[0173]
Further, although not shown in the figure, the use of a module having a layer containing an organic compound so that light can be emitted from both sides can be applied to all other electronic devices shown in this embodiment. it can.
[0174]
As described above, the applicable range of the present invention is extremely wide, and the present invention can be applied to manufacturing methods of electronic devices in all fields. Further, the electronic apparatus of this embodiment can be realized by using any combination of Embodiment Modes 1 and 2 and Embodiments 1 and 2.
[0175]
【The invention's effect】
According to the present invention, when a pair of substrates is attached to each other, the seal is crushed uniformly, and a highly reliable light-emitting device can be obtained.
[Brief description of the drawings]
FIG. 1 illustrates the first embodiment.
FIG. 2 is a diagram showing a cross section of a seal.
FIG. 3 illustrates the first embodiment.
FIG. 4 illustrates a second embodiment.
FIG. 5 illustrates a structure of an active matrix light-emitting device. (Example 1)
FIG. 6 is a view showing a first embodiment;
FIG. 7 is a diagram showing a second embodiment.
FIG. 8 is a diagram showing a temporal change in the width of a sealant. (Embodiment 1)
FIG. 9 is a diagram showing a relationship between an adhesive strength and a storage test time. (Embodiment 1)
FIG. 10 is a diagram showing a method of measuring adhesive strength. (Embodiment 1)
FIG. 11 shows a seal dispenser. (Embodiment 1)
FIG. 12 is a view showing a plate for bonding small substrates. (Embodiment 1)
FIG. 13 is a view showing a state of a sealant at the time of a bonding press. (Embodiment 1)
FIG. 14 is a diagram showing a state of a sample after storage at high temperature and high humidity. (Embodiment 1)
FIG. 15 is a conceptual diagram of a bonding mechanism (Embodiment 1);
FIG. 16 illustrates an example of an electronic device. (Example 3)
FIG. 17 illustrates an example of an electronic device. (Example 3)

Claims (16)

A light-emitting element including a first electrode, an organic compound layer in contact with the first electrode, and a second electrode in contact with the organic compound layer is provided between a pair of substrates, at least one of which is light-transmitting. A method for manufacturing a light-emitting device including a plurality of pixel portions,
A sealant is arranged between the pair of substrates so as to surround the outer periphery of the pixel portion,
When the sealant is uncured, the viscosity of the sealant decreases when there is a shear stress generated between the substrate and the sealant caused by the pressure on the substrate, and after removing the shear stress, the viscosity returns to the original value. It is a material that returns to the state,
The light emitting device according to claim 1, wherein the sealant includes a spacing member for keeping a distance between the pair of substrates constant. The light emitting device according to claim 1, wherein the sealant is a photocurable resin. 2. The light emitting device according to claim 1, wherein the sealant is a resin that uses both light curing and heat curing. 2. The light emitting device according to claim 1, wherein the sealant contains an epoxy resin. The light emitting device according to claim 1, wherein the sealant includes an acrylic resin. The light emitting device according to claim 1, wherein the sealant includes a vinyl ether resin. 2. The light emitting device according to claim 1, wherein the sealing agent has a viscosity ratio of 3 or more when a shear stress is applied to the stationary state. The light emitting device according to claim 1, wherein the gap holding agent is made of an inorganic material. The light emitting device according to claim 1, wherein the gap holding agent includes SiO2. A light-emitting element including a first electrode, an organic compound layer in contact with the first electrode, and a second electrode in contact with the organic compound layer is provided between a pair of substrates, at least one of which is light-transmitting. A method for manufacturing a light-emitting device including a plurality of pixel portions,
A sealant is arranged between the pair of substrates so as to surround the outer periphery of the pixel portion,
Apply pressure in the direction perpendicular to the pair of substrate surfaces,
When the sealant is uncured, the viscosity of the sealant decreases when there is a shear stress generated between the substrate and the sealant caused by the pressure on the substrate, and after removing the shear stress, the viscosity returns to the original value. It is a material that returns to the state,
A method for manufacturing a light-emitting device, wherein the sealant includes a spacing material for keeping a distance between a pair of substrates constant. The method for manufacturing a light emitting device according to claim 10, wherein the sealant is a photocurable resin. The method for manufacturing a light-emitting device according to claim 10, wherein the sealant is a resin that uses both light curing and heat curing. The method for manufacturing a light-emitting device according to claim 10, wherein the sealant contains an epoxy resin. The method for manufacturing a light-emitting device according to claim 10, wherein the sealant contains an acrylic resin. The method for manufacturing a light-emitting device according to claim 10, wherein the sealant includes a vinyl ether resin. The method for manufacturing a light-emitting device according to claim 10, wherein the sealant has a viscosity ratio of 3 or more when a shear stress is applied to the stationary state.

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