JP4215750B2 - Method for manufacturing light emitting device - Google Patents

Description

  The present invention relates to a semiconductor device having a circuit formed of a thin film transistor (hereinafter referred to as TFT) and a manufacturing method thereof. For example, the present invention relates to an electronic device in which an electro-optical device typified by a liquid crystal display panel or a light-emitting display device having a light-emitting layer containing an organic compound is mounted as a component.

  Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

  In recent years, research on a light-emitting device having an EL element as a self-luminous element has been actively conducted, and in particular, a light-emitting device using an organic material as an EL material has attracted attention. This light emitting device is also called an EL display.

Note that the EL element includes a layer containing an organic compound (hereinafter, referred to as an EL layer) from which luminescence generated by applying an electric field is obtained, an anode, and a cathode. Luminescence in an organic compound includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state. The light-emitting device manufactured by the film formation method can be applied to either light emission.

Unlike the liquid crystal display device, the light-emitting device is a self-luminous type and has a feature that there is no problem of viewing angle. That is, as a display used outdoors, it is more suitable than a liquid crystal display, and use in various forms has been proposed.

An EL element has a structure in which an EL layer is sandwiched between a pair of electrodes, but the EL layer usually has a laminated structure. A typical example is a “hole transport layer / light emitting layer / electron transport layer” stacked structure proposed by Tang et al. Of Kodak Eastman Company. This structure has very high luminous efficiency, and most of the light emitting devices that are currently under research and development employ this structure.

  In addition, a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are sequentially laminated on the anode. Good structure. You may dope a fluorescent pigment | dye etc. with respect to a light emitting layer. In addition, these layers may be formed using a low molecular weight material or a high molecular weight material.

  Note that in this specification, all layers provided between a cathode and an anode are collectively referred to as an EL layer. Therefore, the above-described hole injection layer, hole transport layer, light emitting layer, electron transport layer, and electron injection layer are all included in the EL layer.

  In this specification, a light-emitting element formed of a cathode, an EL layer, and an anode is referred to as an EL element. For this purpose, an EL layer is provided between two types of stripe-shaped electrodes provided so as to be orthogonal to each other. There are two types, a formation method (simple matrix method) and a method (active matrix method) in which an EL layer is formed between a pixel electrode connected to a TFT and arranged in a matrix and a counter electrode. However, when the pixel density increases, the active matrix type in which a switch is provided for each pixel (or one dot) is considered to be advantageous because it can be driven at a lower voltage.

  In addition, the EL material forming the EL layer is very easily deteriorated, and is easily oxidized or absorbed by the presence of oxygen or water, so that there is a problem that the light emitting luminance of the light emitting element is reduced and the lifetime is shortened.

  Therefore, conventionally, the light emitting element is covered with a sealing can, dry air is sealed inside, and a desiccant is attached, thereby preventing oxygen or moisture from reaching the light emitting element.

  In a conventional light emitting device, an electrode on a substrate is formed as an anode, an organic compound layer is formed on the anode, and a cathode is formed on the organic compound layer. The structure was such that the anode, which is a transparent electrode, was taken out toward the TFT (hereinafter referred to as a bottom emission structure).

  In the above bottom emission structure, it is possible to cover the light emitting element with a sealing can. However, the electrode on the substrate is formed as an anode, a layer containing an organic compound is formed on the anode, and the layer containing the organic compound is transparent. In the case of a structure in which a cathode that is an electrode is formed (hereinafter referred to as a top emission structure), a sealing can made of a material that blocks light cannot be applied. Further, in the top emission structure, when a desiccant is disposed on the pixel portion, display is disturbed. Also, in order to prevent moisture absorption, careful handling of the desiccant was necessary, and it was necessary to work quickly when encapsulating.

  Compared with the bottom emission structure, the top emission structure can reduce the number of material layers through which light emitted from a layer containing an organic compound passes, and can suppress stray light between material layers having different refractive indexes.

  It is an object of the present invention to provide a light-emitting device having a structure that prevents oxygen or moisture from reaching a light-emitting element and a manufacturing method thereof. Another object is to seal the light-emitting element with a small number of steps without enclosing the desiccant.

  Therefore, the present invention has a top emission structure in which a substrate provided with a light-emitting element and a transparent sealing substrate are bonded to each other, and when the two substrates are bonded, the pixel region is entirely covered with a transparent second sealing material. Surrounded with a first sealing material (having a higher viscosity than the second sealing material) containing a gap material (filler, fine particles, etc.) that keeps the distance between the two substrates, the first sealing material and the second sealing material It is set as the structure sealed with.

  When the seal pattern shape of the first sealing material is formed in a square shape, a U shape, or a U shape, and a second sealing material having a low viscosity is dropped to bond two substrates together There is a risk of bubbles remaining in the corners.

  Therefore, in the present invention, the pattern shape of the first sealing material is not a square shape, a U shape, or a U shape, but a pattern (line shape) without a bent portion, and bubbles are formed at the corners. Openings (4 locations) for relief are provided. By providing the opening, when the two substrates are bonded together using the second sealing material having a low viscosity, the second sealing material having a low viscosity is pushed out in the direction of the corner opening, and the pixel region is exposed. It is possible to seal without introducing bubbles. Further, the pattern of the first sealing material having a high viscosity may be slightly curved so that bubbles are not formed. Further, it is preferable that the surface of the substrate on the sealing side is smooth with excellent flatness so that bubbles are not mixed.

  In addition, when the two substrates are bonded together, depending on the viscosity of the second sealing material or how it is extruded, the peripheral edge of the second sealing material spreads out from the openings (four locations) and protrudes ( In some cases, it may be a protruding shape), and in other cases, the peripheral edge portion of the second sealing material is intruded inside the opening. In the case of a protruding shape, the bonding area increases, so that the bonding strength between the two substrates can be increased.

  In any case, the high-viscosity first sealing material functions to maintain the gap between the substrates with the gap material and to adjust the planar shape of the second sealing material having a low viscosity. The first sealing material can also serve as a mark when the substrate is divided. For example, when a plurality of panels are manufactured on a single substrate, that is, so-called multi-chamfering, the substrate may be divided along the first sealing material.

  In addition, when receiving an impact from the outside, the load is most applied to the first sealing material (other than the first sealing material having a gap material) disposed outside the pixel region. It is possible to prevent the pixel area from being loaded. Further, since the first sealing materials are arranged symmetrically and have a structure in which a load is applied uniformly and in a balanced manner, the impact from the outside can be evenly diffused. Moreover, since the first sealing material has a symmetrical shape and is arranged symmetrically, the substrate interval can be kept more constant. That is, with the configuration of the present invention, the mechanical strength of the light-emitting device can be further enhanced.

  In the top emission structure, it is desirable that the thickness of the substrate through which light emitted from the light emitting element passes is thin, but the thin substrate has a drawback that it is vulnerable to impact. According to the present invention, even if a glass substrate that is relatively easily broken is used as a substrate through which light emitted from the light-emitting element passes, it can withstand external impacts. In addition, a light-transmitting substrate to be used is not particularly limited, and for example, a plastic substrate or the like can be used. However, in order to maintain adhesive strength, it is preferable to use a pair of substrates having the same thermal expansion coefficient.

Further, by making the seal pattern of the first seal material into a simple shape, not only the dispenser device but also other seal pattern forming methods such as a printing method can be used.

  Further, since the light-emitting element is sealed with the first sealing material, the second sealing material, and the substrate, moisture and oxygen can be effectively blocked. Note that it is preferable that the pair of substrates be bonded under reduced pressure or a nitrogen atmosphere.

The configuration of the invention disclosed in this specification is as follows.
A light-emitting element having a first electrode, an organic compound layer in contact with the first electrode, and a second electrode in contact with the organic compound layer between a pair of substrates at least one of which is light-transmitting A light-emitting device including a plurality of pixel portions,
A pair of substrates is fixed by a first sealant disposed surrounding the pixel portion and a second sealant that is in contact with the first sealant and covers the pixel portion. The sealing material is a light-emitting device having openings at four corners.

  In the above structure, the first sealing material has a linear shape and is arranged in parallel with the X direction or the Y direction on the substrate plane.

  Moreover, in the said structure, as shown to FIG. 1 (A)-FIG.1 (C), the said 2nd sealing material is exposed in the said opening, The periphery of the said 2nd sealing material exposed Is characterized by being curved. As shown in FIG. 1A, the second sealing material may be exposed at the opening, and the exposed peripheral edge of the second sealing material may protrude from the opening. Alternatively, as shown in FIG. 1C, the second sealing material is exposed at the opening, and the exposed peripheral edge of the second sealing material is recessed and curved from the opening. It is good also as composition which has.

In addition, the shape of the second sealing material is not limited to a linear shape as long as the shape is symmetrical and arranged symmetrically with the pixel portion interposed therebetween.
A light-emitting element having a first electrode, an organic compound layer in contact with the first electrode, and a second electrode in contact with the organic compound layer between a pair of substrates at least one of which is light-transmitting A light-emitting device including a plurality of pixel portions, wherein a pair of first sealing materials are disposed in the X direction with the pixel portions interposed therebetween, and another pair of first sealing materials are disposed in the Y direction. The light emitting device is characterized in that at least a space between the pair of first sealing materials is filled with a second sealing material.

  In each of the above configurations, the first sealing material includes a gap material that holds a pair of substrate intervals.

  In each of the above-described configurations, the second sealing material is higher in translucency than the first sealing material.

  In each of the above structures, the thickness of the second electrode is 1 nm to 10 nm.

Further, in each of the above-described structures, a transparent protective layer made of CaF ₂ , MgF ₂ , or BaF ₂ is provided between the second electrode and the second sealing material. It is said.

  In each of the above structures, the light-emitting device is characterized in that light emitted from the light-emitting element is emitted through the second sealing material and one substrate.

  The present invention can also be applied to a double-sided light emitting element. In that case, in each of the above structures, the light emitting element emits light that is transmitted through the second sealing material and one substrate, and the other substrate. The light emitting device is characterized in that there is emitted light that is transmitted through the light.

Further, the configuration of the invention for realizing each of the above structures is as follows.
Forming a total of four pairs of first seal materials in the X direction and the Y direction at intervals on the first substrate;
Dropping a second sealing material having translucency in a region surrounded by the first sealing material;
When the second substrate provided with a pixel portion provided with a light emitting element and the first substrate are bonded so that the pixel portion is disposed in a region surrounded by the first sealant, the second seal Spreading the material and filling at least between the first sealing materials facing each other;
A method for manufacturing a light emitting device, comprising: curing the first sealing material and the second sealing material.

In addition, the structure of the invention relating to the manufacturing method for realizing the top surface structure of FIG.
Forming a total of four pairs of first seal materials in the X direction and the Y direction at intervals on the first substrate;
Dropping a second sealing material having translucency in a region surrounded by the first sealing material;
When the second substrate provided with a pixel portion including a light emitting element and the first substrate are bonded to each other so that the pixel portion is disposed in a region surrounded by the first sealant, the first substrate adjacent to the first substrate is adjacent to the first substrate. And a step of spreading the second sealing material so as to protrude from between the sealing materials, and a step of curing the first sealing material and the second sealing material. Is the method.

In addition, the first sealant and the second sealant may be formed over the second substrate provided with the pixel portion, and the structure of another invention relating to the manufacturing method is as follows. Forming a total of four pairs of first sealing materials in the X direction and the Y direction so as to surround the pixel portion with a space on each of the provided first substrates;
Dropping a second light-transmitting sealing material on the pixel portion;
When bonding the first substrate and the second substrate, a step of spreading the second sealing material and filling at least a space between the first sealing materials facing each other; the first sealing material and the first substrate; And a step of curing the sealing material. 2. A method for manufacturing a light-emitting device.

  In the configuration related to each of the above manufacturing methods, the step of curing the first sealing material and the second sealing material is a step of irradiating ultraviolet rays or a step of heating.

  Moreover, the structure regarding each said manufacturing method WHEREIN: A said 2nd sealing material has a viscosity lower than a said 1st sealing material, It is characterized by the above-mentioned.

  In the configuration related to the manufacturing method, the first substrate and the second substrate are divided along the first sealing material after the step of curing the first sealing material and the second sealing material. It has the process.

In the present invention, as the second electrode (cathode or anode), a thin metal film that transmits light, typically a film mainly composed of aluminum, is used, but the metal thin film is easily oxidized. As a result, the electrical resistance value becomes high. In addition, the second electrode may react with a component contained in the sealing material. Therefore, the second electrode (cathode or anode) formed on the layer containing the organic compound is covered with a transparent protective layer such as CaF ₂ , MgF ₂ , or BaF ₂ , so that the second electrode and the sealing material It is desirable to prevent oxygen from reacting and effectively block oxygen and moisture without using a desiccant. CaF ₂ , MgF ₂ , and BaF ₂ can be formed by a vapor deposition method. By continuously forming a cathode and a transparent protective layer by a vapor deposition method, contamination of impurities and the surface of the electrode can be Can be prevented from touching. CaF ₂ , MgF ₂ and BaF ₂ are
Compared to LiF, it is a stable material and hardly diffuses into the TFT and has an adverse effect.

Further, a metal having no oxygen atom in the material itself (material having a high work function), for example, a titanium nitride film is used as the first electrode, and a metal having no oxygen atom in the material itself (material having a low work function) as the second electrode. For example, by using an aluminum thin film and further covering with CaF ₂ , MgF ₂ , and BaF ₂ , the region between the first electrode and the second electrode can be maintained in an oxygen-free state close to zero as much as possible.

  The second sealing material is not particularly limited as long as it is a highly light-transmitting material, but it is desirable to use a material that blocks oxygen and moisture. In addition, when an ultraviolet curable resin is used as the second sealing material, the pixel portion is irradiated with ultraviolet rays when cured, so that a layer that absorbs or reflects only ultraviolet rays, such as ZnO, is formed on the transparent protective layer. It is desirable to do.

Other configurations of the invention disclosed in this specification are as follows:
Between a pair of substrates, at least one of which is light-transmitting, a first electrode, a layer containing an organic compound in contact with the first electrode, and a second electrode in contact with the layer containing the organic compound A light emitting device including a pixel portion having a plurality of light emitting elements,
The first electrode is a stack of metal layers;
The second electrode is a single layer of a metal thin film having a thickness of 1 nm to 10 nm,
The second electrode has a translucent protective layer made of CaF ₂ , MgF ₂ , or BaF ₂ , and a translucent sealing material on the protective layer. Is a light emitting device.

  In the above structure, the metal thin film is mainly composed of aluminum. The layer in contact with the layer containing the organic compound in the stack of metal layers is a layer made of titanium nitride. Further, the metal layer may be a single layer made of titanium nitride instead of being laminated.

  In the above structure, the first electrode is in contact with the source region or the drain region of the TFT, or the first electrode is electrically connected to the source region or the drain region of the TFT. It is characterized by.

In the above configuration, the metal thin film is in contact with a layer made of CaF ₂ , MgF ₂ , or BaF ₂ , which is thinner than the metal thin film, and is in contact with the metal thin film and more than the metal thin film. It is characterized by having a thick layer of CaF ₂ , MgF ₂ , or BaF ₂ . That is, the metal thin film is protected by being sandwiched between layers made of CaF ₂ , MgF ₂ , or BaF ₂ .

  Further, in the above structure, the pair of substrates is fixed by the first sealant disposed so as to surround the pixel portion and the second sealant that is in contact with the first sealant and covers the pixel portion. The first sealing material has openings at four corners.

Note that the light-emitting element (EL element) includes a layer containing an organic compound (hereinafter, referred to as an EL layer) from which luminescence generated by applying an electric field is obtained, an anode, and a cathode. Luminescence in an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning from a triplet excited state to a ground state, which are produced according to the present invention. The light emitting device can be applied to either light emission.

A light-emitting element having an EL layer (EL element) has a structure in which the EL layer is sandwiched between a pair of electrodes. The EL layer usually has a stacked structure. A typical example is a “hole transport layer / light emitting layer / electron transport layer” stacked structure proposed by Tang et al. Of Kodak Eastman Company. This structure has very high luminous efficiency, and most of the light emitting devices that are currently under research and development employ this structure.

  In addition, a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are sequentially laminated on the anode. Good structure. You may dope a fluorescent pigment | dye etc. with respect to a light emitting layer. These layers may all be formed using a low molecular weight material, or may be formed using a high molecular weight material. Alternatively, a layer containing an inorganic material may be used. Note that in this specification, all layers provided between a cathode and an anode are collectively referred to as an EL layer. Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are all included in the EL layer.

  In the light emitting device of the present invention, the screen display driving method is not particularly limited, and for example, a dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used. Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. The video signal input to the source line of the light-emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be designed in accordance with the video signal as appropriate.

  According to the present invention, when a pair of substrates are bonded together, a transparent sealing material can be filled without containing bubbles. Therefore, a highly reliable light-emitting device can be obtained.

Further, a metal having no oxygen atom in the material itself (material having a high work function), for example, a titanium nitride film is used as the first electrode, and a metal having no oxygen atom in the material itself (material having a low work function) as the second electrode. For example, by using an aluminum thin film and covering with CaF ₂ , MgF ₂ , and BaF ₂ , the region between the first electrode (anode) and the second electrode (cathode) is in an oxygen-free state as close to zero as possible. Can be maintained. Therefore, a highly reliable light-emitting device can be obtained.

Embodiments of the present invention will be described below.
(Embodiment 1)

FIG. 1A is a top view of an active matrix light-emitting device in which the present invention is implemented.

In FIG. 1A, 11 is a first substrate, 12 is a second substrate, 13 is a pixel portion, 14 is a drive circuit portion, 15 is a terminal portion, 16 is a first sealing material, and 17a is a second sealing material. .

  The material of the first substrate 11 is not particularly limited, but it is preferable that the first substrate 11 has the same thermal expansion coefficient in order to be bonded to the second substrate 12. In the case of a bottom emission type, a light-transmitting substrate such as a glass substrate, a quartz substrate, or a plastic substrate is used. In the case of a top emission type, a semiconductor substrate or a metal substrate can also be used. The first substrate 11 is provided with a pixel portion 13 having a plurality of light emitting elements, a drive circuit portion 14 and a terminal portion 15.

  Here, an example is shown in which the first sealant 16 is disposed so as to surround the pixel portion 13 and the drive circuit portion 14. In addition, one of the first sealing materials 16 partially overlaps with the terminal portion 15 (or wiring extending from the terminal electrode). The first sealing material 16 includes a gap material for maintaining a distance between the pair of substrates. Since the gap material is included, it is preferable that the first sealing material 16 and the element (such as TFT) do not overlap each other so that a short circuit or the like does not occur when any load is applied. Moreover, the upper surface shape of the 1st sealing material 16 is linear, and has opening in four corners. In other words, a pair of two first sealing materials 16 arranged in parallel with the pixel portion sandwiched in the X direction and two first sealing materials 16 arranged in parallel with the pixel portion sandwiched in the Y direction. A total of four are arranged in one set.

  Further, at least a second sealing material 17 a is filled between the pair of first sealing materials 16. The pair of substrates is fixed by a first sealing material 16 disposed so as to surround the pixel portion, and a second sealing material 17a that is in contact with the first sealing material and covers the pixel portion.

  The second sealing material 17a is made of a colorless and transparent material and does not include a gap material. Therefore, the second sealing material 17a has higher translucency than the first sealing material 16. The second sealing material 17a is exposed at a gap, that is, an opening between the first sealing materials 16, and the exposed peripheral edge of the second sealing material 17a has a curved upper surface shape. .

A mechanism in which the second sealing material 17a has the shape shown in FIG. 1A will be described below with reference to FIG. FIG. 2A illustrates an example of a top view of a sealing substrate (second substrate 22) before bonding. FIG. 2A illustrates an example in which a light-emitting device having one pixel portion is formed from one substrate.

First, four first sealing materials 26 are formed on the second substrate 22 using a dispenser, and then a second sealing material having a viscosity lower than that of the first sealing material is dropped. Note that a top view in a dripped state corresponds to FIG.

  Next, the pixel portion 23 or the driving circuit portion 24 and the first substrate provided with the terminal portion 25 are attached to each other. FIG. 2B shows a top view immediately after bonding the pair of substrates. Since the viscosity of the first sealing material is high, it hardly spreads when bonded, but the viscosity of the second sealing material is low, so when bonded, as shown in FIG. Will spread in a plane. The second sealing material is pushed between the first sealing materials 26, that is, by being pushed toward the opening in the direction of the arrow in FIG. There can be no air bubbles. The first sealing material 26 does not mix even when in contact with the second sealing material 27b, and the first sealing material 26 has a viscosity that does not change the position of formation by the second sealing material 27b.

  In FIG. 2B, the second sealing material 27b is exposed at the opening, and the exposed peripheral edge of the second sealing material 27 protrudes from the opening. By projecting from the opening, the distance between the outside air and the pixel portion can be increased, and blocking of oxygen and moisture can be realized. In addition, since the total adhesion area increases, the bonding strength also increases. In addition, the periphery of the second sealing material 27 is curved in the opening.

Note that, here, an example in which the first sealing material or the second sealing material is formed on the second substrate 22 and then the substrates are attached is shown; however, there is no particular limitation, and the first element in which the element is formed is shown. A first sealing material or a second sealing material may be formed on the substrate.

  Next, heat treatment or ultraviolet irradiation is performed to cure the first seal material 26 and the second seal material 27b.

  Next, a part of the second substrate 22 is divided. In FIG. 2B, a line indicated by a chain line is a substrate dividing line. When dividing, a dividing line may be set in parallel along the first sealing material 26 formed on the terminal portion 25.

  If the procedure shown above is followed, the shape of the 2nd sealing material 17a shown to FIG. 1 (A) can be obtained.

  1A shows an example in which the second sealing material 17a protrudes from the opening, but various shapes can be obtained by appropriately changing the viscosity, amount and material of the second sealing material. .

  For example, as shown in FIG. 1B, the second sealing material 17b may be exposed through the opening, and the exposed peripheral edge of the second sealing material may be curved. In FIG. 1B, the second sealing material does not protrude from the opening, and the periphery of the second sealing material has a shape that fills the gap between the first sealing materials by drawing an arc.

  Further, as shown in FIG. 1C, the second sealing material 17c is exposed at the opening, and the exposed peripheral edge of the second sealing material is recessed from the opening and curved. Also good.

Further, the first sealing material is not limited to a linear shape, and is only required to be bilaterally symmetric and arranged symmetrically with the pixel portion interposed therebetween. For example, as shown in FIG. The shape of the first sealing material may be slightly curved so that the second sealing material having a low height can be easily spread.
(Embodiment 2)

  Here, a part of the cross-sectional structure in the pixel portion of the present invention is shown in FIG.

In FIG. 3A, 300 is a first substrate, 301a and 301b are insulating layers, 302 is a TFT, 308 is a first electrode, 309 is an insulator, 310 is an EL layer, 311 is a second electrode, 312 Is a transparent protective layer, 313 is a second sealing material, and 314 is a second substrate.

A TFT 302 (p-channel TFT) provided over the first substrate 300 is an element that controls a current flowing through the EL layer 310 that emits light, and a drain region (or a source region) 304. Reference numeral 306 denotes a drain electrode (or source electrode) that connects the first electrode and the drain region (or source region). In addition, a wiring 307 such as a power supply line or a source wiring is formed at the same time in the same process as the drain electrode 306. Here, an example is shown in which the first electrode and the drain electrode are formed separately, but they may be the same. An insulating layer 301a serving as a base insulating film (here, a nitride insulating film as a lower layer and an oxide insulating film as an upper layer) is formed over the first substrate 300. Between the gate electrode 305 and the active layer, A gate insulating film is provided. Reference numeral 301b denotes an interlayer insulating film made of an organic material or an inorganic material. Although not shown here, one or more other TFTs (n-channel TFTs or p-channel TFTs) are provided in one pixel. Although a TFT having one channel formation region 303 is shown here, the TFT is not particularly limited and may be a TFT having a plurality of channels.

Reference numeral 308 denotes a first electrode, that is, an anode (or cathode) of the OLED. The material of the first electrode 308 includes Ti, TiN, TiSi _x N _y , Ni, W, WSi _x , WN _x , WSi _x N _y , NbN, Mo, Cr, Pt, Zn, Sn, In, or Mo A film mainly composed of an element selected from the above, an alloy material or compound material containing the element as a main component, or a stacked film thereof may be used in a total film thickness range of 100 nm to 800 nm. Here, a titanium nitride film is used as the first electrode 308. In the case where a titanium nitride film is used as the first electrode 308, it is preferable to increase the work function by performing plasma treatment using ultraviolet irradiation or chlorine gas on the surface.

  In addition, an insulator 309 (referred to as a bank, a partition, a barrier, a bank, or the like) is provided to cover an end portion (and the wiring 307) of the first electrode 308. As the insulator 309, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), or a material thereof For example, a photosensitive organic resin covered with a silicon nitride film is used. For example, when positive photosensitive acrylic is used as the organic resin material, it is preferable that only the upper end portion of the insulator has a curved surface having a curvature radius. As the insulator, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used.

The layer 310 containing an organic compound is formed by an evaporation method or a coating method. Note that in order to improve reliability, it is preferable to perform deaeration by performing vacuum heating before the formation of the layer 310 containing an organic compound. For example, in the case of using a vapor deposition method, the vapor deposition is performed in a film formation chamber which is evacuated to a vacuum degree of 5 × 10 ⁻³ Torr (0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ Pa. At the time of vapor deposition, the organic compound is vaporized by resistance heating in advance, and is scattered in the direction of the substrate by opening the shutter at the time of vapor deposition. The vaporized organic compound scatters upward and is deposited on the substrate through an opening provided in the metal mask.

For example, Alq _3, it is possible to obtain a partially Alq ₃ doped with Nile red that is a red light emitting _{pigment, Alq 3, p-EtTAZ,} TPD white by sequentially laminated by an evaporation method (aromatic diamine).

Moreover, when forming the layer containing an organic compound by the apply | coating method using spin coating, after apply | coating, it is preferable to bake by vacuum heating. For example, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) that acts as a hole injection layer is applied and fired on the entire surface, and then a luminescent center dye (1, 1,4,4-tetraphenyl-1,3-butadiene (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-styryl) -4H-pyran (DCM1), Nile Red, Coumarin 6 Etc.) A doped polyvinyl carbazole (PVK) solution may be applied to the entire surface and fired. PEDOT / PSS uses water as a solvent and does not dissolve in organic solvents. Therefore, when PVK is applied from above, there is no fear of redissolving. Further, since PEDOT / PSS and PVK have different solvents, it is preferable not to use the same film forming chamber. Alternatively, the layer 310 containing an organic compound may be a single layer, and an electron-transporting 1,3,4-oxadiazole derivative (PBD) may be dispersed in hole-transporting polyvinyl carbazole (PVK). . Further, white light emission can be obtained by dispersing 30 wt% PBD as an electron transporting agent and dispersing an appropriate amount of four kinds of dyes (TPB, coumarin 6, DCM1, Nile red).

Reference numeral 311 denotes a second electrode made of a conductive film, that is, a cathode (or anode) of the OLED. As a material of the second electrode 311, a translucent material formed by an alloy such as MgAg, MgIn, AlLi, CaF ₂ , CaN, or an element belonging to Group 1 or 2 of the periodic table and aluminum by a co-evaporation method. A film having the same may be used. Here, since the top emission type emits light through the second electrode, an aluminum film of 1 nm to 10 nm or an aluminum film containing a small amount of Li is used. When the Al film is used for the second electrode 311, a material in contact with the layer 310 containing an organic compound can be formed using a material other than an oxide, and the reliability of the light-emitting device can be improved. Further, a light-transmitting layer (film thickness: 1 nm to 5 nm) made of CaF ₂ , MgF ₂ , or BaF ₂ may be formed as a cathode buffer layer before forming an aluminum film having a thickness of 1 nm to 10 nm.

In order to reduce the resistance of the cathode, an auxiliary electrode may be provided over the second electrode 311 in a region that does not serve as a light emitting region. Further, when the cathode is formed, a resistance heating method by vapor deposition is used, and the cathode may be selectively formed using a vapor deposition mask.

Reference numeral 312 denotes a transparent protective layer formed by vapor deposition, which protects the second electrode 311 made of a metal thin film. Further, the transparent protective layer 312 is covered with a second sealing material 313. Since the second electrode 311 is an extremely thin metal film, if it comes into contact with oxygen, oxidation or the like is not easily generated, and there is a possibility that the second electrode 311 reacts with a solvent or the like contained in the sealing material and changes its quality. By covering the second electrode 311 made of such a metal thin film with a transparent protective layer 312 such as CaF ₂ , MgF ₂ , or BaF ₂ , a solvent contained in the second electrode 311 and the second sealant 313, etc. In addition to preventing reaction with other ingredients, it effectively blocks oxygen and moisture without using a desiccant. CaF ₂ , MgF ₂ , and BaF ₂ can be formed by a vapor deposition method. By continuously forming a cathode and a transparent protective layer by a vapor deposition method, contamination of impurities and the surface of the electrode can be Can be prevented from touching. In addition, if the vapor deposition method is used, the transparent protective layer 312 can be formed under the condition that hardly damages the layer containing the organic compound. In addition, the second electrode 311 may be further protected by providing and sandwiching a light-transmitting layer made of CaF ₂ , MgF ₂ , or BaF ₂ above and below the second electrode 311.

Further, a metal having no oxygen atom in the material itself (material having a high work function), for example, a titanium nitride film is used as the first electrode, and a metal having no oxygen atom in the material itself (material having a low work function) as the second electrode. For example, by using an aluminum thin film and further covering with CaF ₂ , MgF ₂ , and BaF ₂ , the region between the first electrode and the second electrode can be maintained in an oxygen-free state close to zero as much as possible.

Further, the second sealant 313 is formed by bonding the second substrate 314 and the first substrate 300 by the method described in Embodiment Mode 1. The second sealant 313 is not particularly limited as long as it is a light-transmitting material. Typically, an ultraviolet-curing or thermosetting epoxy resin may be used. Here, a highly heat-resistant UV epoxy resin having a refractive index of 1.50, a viscosity of 500 cps, a Shore D hardness of 90, a tensile strength of 3000 psi, a Tg point of 150 ° C., a volume resistance of 1 × 10 ¹⁵ Ω · cm, and a withstand voltage of 450 V / mil (electro Wright Corporation: 2500 Clear) is used. Further, by filling the second sealant 313 between the pair of substrates, the entire transmittance can be improved. Transmittance filled with a second sealant between a pair of glass substrates, Transmittance filled with a first sealant between a pair of glass substrates, Transmittance filled with nitrogen gas between a pair of glass substrates I asked for each. FIG. 8 shows transmittance graphs. As shown in FIG. 8, the transmittance with which the second sealing material is filled between a pair of glass substrates is 90% or more in the visible light region. In FIG. 8, the vertical axis represents the light transmittance, and the horizontal axis represents the wavelength.

FIG. 3B shows a simplified stack structure in the light emitting region. Light emission is emitted in the direction of the arrow shown in FIG.

When the first electrode 318 made of a transparent conductive film is used as shown in FIG. 3C instead of the first electrode 308 made of a metal layer, light emission is emitted to both the upper surface and the lower surface. Can do. As the transparent conductive film, ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), or the like may be used.

Further, this embodiment mode can be freely combined with Embodiment Mode 1.
(Embodiment 3)

FIG. 4 shows an example in which a plurality of pixel portions are formed on one substrate, that is, an example of multi-face drawing.

  Here, an example in which four panels are formed using one substrate is shown.

  First, the first sealing material 32 is formed at a predetermined position on the second substrate 31 by a dispenser device in an inert gas atmosphere. (FIG. 4 (A)) As the semitransparent first sealing material 32, a filler (diameter 6 μm to 24 μm) containing a viscosity of 370 Pa · s is used. FIG. 9 shows data showing the relationship between the filler diameter contained in the sealing material and the adhesive strength. Moreover, since it is a simple sealing pattern, the 1st sealing material 32 can also be formed by the printing method.

  Next, a transparent second sealing material 33 is dropped into a region surrounded by the first sealing material 32 (however, the four corners are open). (FIG. 4 (B)) Here, a highly heat-resistant UV epoxy resin having a refractive index of 1.50 and a viscosity of 500 cps (manufactured by Electrolite: 2500 Clear) is used.

  Next, the first substrate provided with the pixel portion 34 and the substrate provided with a sealant are attached to each other. (FIG. 4C) Note that it is preferable to perform deaeration by performing annealing in vacuum immediately before attaching the pair of substrates with a sealant. Here, the second sealing material 33 is expanded so as to have a shape as shown in FIG. Due to the shape and arrangement of the first sealing material 32, the second sealing material 33 can be filled without bubbles. Next, ultraviolet irradiation is performed to cure the first sealing material 32 and the second sealing material 33. In addition to ultraviolet irradiation, heat treatment may be performed.

  Next, a scribe line 35 indicated by a chain line is formed using a scriber device. (FIG. 4D) The scribe line 35 may be formed along the first sealing material.

  Next, the substrate is cut using a breaker device. (FIG. 4E) Thus, four panels can be manufactured from one substrate.

  Further, this embodiment mode can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.

  The present invention having the above-described configuration will be described in more detail with the following examples.

  In this example, an example of a light-emitting device including a light-emitting element having a layer containing an organic compound as a light-emitting layer is shown in FIG.

5A is a top view illustrating the light-emitting device, and FIG. 5B is a cross-sectional view taken along line A-A ′ in FIG. 5A. Reference numeral 1101 indicated by a dotted line denotes a source signal line driver circuit, 1102 denotes a pixel portion, and 1103 denotes a gate signal line driver circuit. Reference numeral 1104 denotes a sealing substrate, 1105 denotes a sealing agent, and the inside surrounded by the first sealing agent 1105 is filled with a transparent second sealing material 1107. Note that the second sealing material 1107 is exposed at four corners.

  Reference numeral 1108 denotes a wiring for transmitting signals input to the source signal line driver circuit 1101 and the gate signal line driver circuit 1103. A video signal and a clock signal are received from an FPC (flexible printed circuit) 1109 serving as an external input terminal. receive. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.

  Next, a cross-sectional structure is described with reference to FIG. A driver circuit and a pixel portion are formed over the substrate 1110. Here, a source signal line driver circuit 1101 and a pixel portion 1102 are shown as the driver circuits.

  Note that as the source signal line driver circuit 1101, a CMOS circuit in which an n-channel TFT 1123 and a p-channel TFT 1124 are combined is formed. The TFT forming the driving circuit may be formed by a known CMOS circuit, PMOS circuit or NMOS circuit. Further, in this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown, but this is not always necessary, and it can be formed outside the substrate.

  The pixel portion 1102 is formed by a plurality of pixels including a switching TFT 1111, a current control TFT 1112, and a first electrode (anode) 1113 electrically connected to the drain thereof.

  Here, since the first electrode 1113 is in direct contact with the drain of the TFT, the lower layer of the first electrode 1113 is a material layer that can be in ohmic contact with the drain made of silicon, and a layer containing an organic compound. It is desirable to use a material layer having a high work function on the surface in contact. For example, when a three-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film is used, the resistance as a wiring is low, a good ohmic contact can be obtained, and the film can function as an anode. . In addition, the first electrode 1113 may be a single layer of a titanium nitride film, or a stack of three or more layers may be used.

In addition, insulators (referred to as banks, partition walls, barriers, banks, or the like) 1114 are formed on both ends of the first electrode (anode) 1113. The insulator 1114 may be formed using an organic resin film or an insulating film containing silicon. Here, as the insulator 1114, a positive photosensitive acrylic resin film is used to form the insulator having the shape shown in FIG. Further, the insulator 1114 may be covered with a protective film formed of an aluminum nitride film, an aluminum nitride oxide film, or a silicon nitride film. This protective film is an insulating film mainly containing silicon nitride or silicon nitride oxide obtained by sputtering (DC method or RF method), or a thin film mainly containing carbon. If a silicon target is used and formed in an atmosphere containing nitrogen and argon, a silicon nitride film can be obtained. A silicon nitride target may be used. Further, the protective film may be formed using a film forming apparatus using remote plasma. Further, in order to allow light emission to pass through the protective film, it is preferable to make the protective film as thin as possible.

  Further, a layer 1115 containing an organic compound is selectively formed over the first electrode (anode) 1113 by an evaporation method using an evaporation mask or an inkjet method. Further, a second electrode (cathode) 1116 is formed over the layer 1115 containing an organic compound. Thus, a light-emitting element 1118 including the first electrode (anode) 1113, the layer 1115 containing an organic compound, and the second electrode (cathode) 1116 is formed. Here, since the light-emitting element 1118 emits white light, a color filter including a colored layer 1131 and a BM 1132 (for the sake of simplicity, an overcoat layer is not shown here) is provided.

  Further, if each layer containing an organic compound capable of emitting R, G, and B is selectively formed, a full color display can be obtained without using a color filter.

  Further, in order to seal the light emitting element 1118 formed over the substrate 1110, the sealing substrate 1104 is bonded to the first sealing material 1105 and the second sealing material 1107. Note that an epoxy resin is preferably used as the first sealing material 1105 and the second sealing material 1107. The first sealing material 1105 and the second sealing material 1107 are preferably materials that do not transmit moisture and oxygen as much as possible.

  Further, in this embodiment, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar, polyester, acrylic, or the like is used as a material constituting the sealing substrate 1104 in addition to a glass substrate or a quartz substrate. be able to. Further, after the sealing substrate 1104 is bonded using the first sealing material 1105 and the second sealing material 1107, it is also possible to seal with a third sealing material so as to cover the side surface (exposed surface).

  By enclosing the light emitting element in the first sealing material 1105 and the second sealing material 1107 as described above, the light emitting element can be completely blocked from the outside, and deterioration of the organic compound layer such as moisture and oxygen from the outside can be performed. It can prevent the urging substance from entering. Therefore, a highly reliable light-emitting device can be obtained.

  This embodiment can be freely combined with any one of Embodiment Modes 1 to 3.

  In this example, an example different from the cross-sectional structure shown in Embodiment Mode 2 is shown in FIG.

  In FIG. 7A, 700 is a first substrate, 701a and 701b are insulating layers, 702 is a TFT, 709 is an insulator, 710 is an EL layer, 711 is a second electrode, 712 is a transparent protective layer, and 713 is A second sealing material 714 is a second substrate.

  A TFT 702 (p-channel TFT) provided over the first substrate 700 is an element that controls current flowing in the EL layer 710 that emits light, and 704 is a drain region (or source region). Although not shown here, one or more other TFTs (n-channel TFTs or p-channel TFTs) are provided in one pixel. Although a TFT having one channel formation region 703 is shown here, the TFT is not particularly limited and may be a TFT having a plurality of channels.

  7A includes first electrodes 708a to 708c each including a stack of metal layers, and an insulator (referred to as a bank or a partition) 709 that covers an end portion of the first electrode. After the formation, etching is performed in a self-aligning manner using the insulator 709 as a mask, and a part of the insulator is etched and the central portion of the first electrode is thinly etched to form a step at the end. By this etching, the central portion of the first electrode is thin and flat, and the end portion of the first electrode covered with the insulator is thick, that is, a concave shape. Then, a layer 710 containing an organic compound and a second electrode 711 are formed over the first electrode, whereby the light-emitting element is completed.

  In the structure shown in FIG. 7A, the light emitted in the lateral direction is reflected or condensed by the slope formed at the step portion of the first electrode, and is extracted in one direction (the direction passing through the second electrode). This is to increase the amount of luminescence.

  Accordingly, it is preferable that the sloped portion 708b be made of a material mainly containing a metal that reflects light, such as aluminum or silver, and the central portion 708a in contact with the layer 710 containing an organic compound has an anode with a high work function. It is preferable to use a material or a cathode material having a small work function. Since a wiring 707 such as a power supply line and a source wiring is formed at the same time, it is preferable to select a low-resistance material.

In addition, an inclination angle (also referred to as a taper angle) on the inclined surface toward the center of the first electrode is preferably more than 50 °, less than 60 °, and more preferably 54.7 °. It should be noted that the angle of reflection, the material and film thickness of the organic compound layer, or the material and film of the second electrode are appropriately selected so that the light reflected by the inclined surface of the first electrode is not dispersed between layers or becomes stray light. It is necessary to set the thickness.

  In this embodiment, a stack of a titanium film (60 nm) and a titanium nitride film (film thickness 100 nm) is designated as 708a, an aluminum film (350 nm) containing a small amount of Ti as 708b, and a titanium film (100 nm) as 708c. This 708c protects 708b and prevents the occurrence of hillocks and alteration of the aluminum film. Alternatively, a titanium nitride film may be used as 708c to provide light shielding properties and prevent reflection of the aluminum film. Further, although a titanium film is used as a lower layer of 708a in order to make a good ohmic contact with 704 made of silicon as 708a, it is not particularly limited, and another metal film may be used. Further, 708a may be a single layer of a titanium nitride film.

  In this embodiment, since the titanium nitride film is used as an anode, it is necessary to perform UV treatment or plasma treatment. However, when etching 708b and 708c, plasma treatment is performed on the surface of the titanium nitride film at the same time. As a sufficient work function can be obtained.

Further, as an anode material replacing the titanium nitride film, an element selected from Ni, W, WSi _x , WN _x , WSi _x N _y , NbN, Mo, Cr, Pt, Zn, Sn, In, or Mo, or A film mainly containing an alloy material or compound material containing the element as a main component or a stacked film thereof may be used in the total film thickness range of 100 nm to 800 nm.

  In the structure shown in FIG. 7A, etching is performed in a self-aligning manner using the insulator 709 as a mask. Therefore, the number of masks is not increased, and a top emission light emitting device with a small number of masks and processes as a whole. Can be produced.

  A structure different from that in FIG. 7A is illustrated in FIG. In the structure of FIG. 7B, the insulating layer 801c is used as an interlayer insulating film, and the first electrode and the drain electrode (or the source electrode) are provided in different layers. The structure can increase the area.

  In FIG. 7B, reference numeral 800 denotes a first substrate, 801a, 801b and 801c are insulating layers, 802 is a TFT (p-channel TFT), 803 is a channel formation region, 804 is a drain region (or source region), 805 Is a gate electrode, 806 is a drain electrode (or source electrode), 807 is a wiring, 808 is a first electrode, 809 is an insulator, 810 is an EL layer, 811 is a second electrode, 812 is a transparent protective layer, 813 is A second sealing material 814 is a second substrate.

  In addition, when a transparent conductive film is used for the first electrode 808, a double-sided light-emitting device can be manufactured.

  In addition, this embodiment can be freely combined with any one of Embodiment Modes 1 to 3 and Embodiment 1.

By implementing the present invention, all electronic devices incorporating a module (an active matrix EL module or a passive matrix EL module) having a layer containing an organic compound are completed.

  Such electronic devices include video cameras, digital cameras, head mounted displays (goggles type displays), car navigation systems, projectors, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.), etc. Can be mentioned. Examples of these are shown in FIGS.

FIG. 10A illustrates a personal computer, which includes a main body 2001, an image input portion 2002, a display portion 2003, a keyboard 2004, and the like.

FIG. 10B illustrates a video camera, which includes a main body 2101, a display portion 2102, an audio input portion 2103, operation switches 2104, a battery 2105, an image receiving portion 2106, and the like.

FIG. 10C illustrates a mobile computer, which includes a main body 2201, a camera unit 2202, an image receiving unit 2203, operation switches 2204, a display unit 2205, and the like.

FIG. 10D illustrates a goggle type display, which includes a main body 2301, a display portion 2302, an arm portion 2303, and the like.

FIG. 10E shows a player using a recording medium (hereinafter referred to as a recording medium) on which a program is recorded, and includes a main body 2401, a display portion 2402, a speaker portion 2403, a recording medium 2404, an operation switch 2405, and the like. This player uses a DVD (Digital Versatile Disc), CD, or the like as a recording medium, and can perform music appreciation, movie appreciation, games, and the Internet.

  FIG. 10F illustrates a digital camera, which includes a main body 2501, a display portion 2502, an eyepiece portion 2503, an operation switch 2504, an image receiving portion (not shown), and the like.

  FIG. 11A shows a mobile phone, which includes a main body 2901, an audio output portion 2902, an audio input portion 2903, a display portion 2904, operation switches 2905, an antenna 2906, an image input portion (CCD, image sensor, etc.) 2907, and the like.

  FIG. 11B illustrates a portable book (electronic book), which includes a main body 3001, display portions 3002 and 3003, a storage medium 3004, operation switches 3005, an antenna 3006, and the like.

  FIG. 11C illustrates a display, which includes a main body 3101, a support base 3102, a display portion 3103, and the like.

  Incidentally, the display shown in FIG. 11C is a medium or small size display, for example, a screen size of 5 to 20 inches. Further, in order to form a display portion having such a size, it is preferable to use a substrate having a side of 1 m and perform mass production by performing multiple chamfering.

  As described above, the applicable range of the present invention is so wide that the present invention can be applied to methods for manufacturing electronic devices in various fields. In addition, the electronic apparatus of this example can be realized by using any combination of Embodiment Modes 1 to 3 and Examples 1 and 2.

FIG. 3 shows Embodiment Mode 1; FIG. 3 shows Embodiment Mode 1; FIG. 5 shows Embodiment Mode 2. FIG. 4 shows Embodiment 3. FIG. 11 illustrates a structure of an active matrix light-emitting device. Example 1 FIG. 3 shows Embodiment Mode 1; FIG. The figure which shows the transmittance | permeability of a sealing material. The figure which shows the relationship between a filler diameter and adhesive strength. FIG. 14 illustrates an example of an electronic device. (Example 3) FIG. 14 illustrates an example of an electronic device. (Example 3)

Claims (12)

A method for manufacturing a light-emitting device in which a first substrate provided with a pixel portion having a plurality of light-emitting elements and a second substrate having a light-transmitting property are bonded to each other,
Forming a first sealing material on the second substrate so as to surround the pixel portion and to have an opening for air bubbles to escape ;
On the second substrate, a second sealing material having translucency is dropped in a region surrounded by the first sealing material,
Attaching the second substrate and the first substrate, said by the second sealing material extruded toward the opening, Utotomoni the pixel portion on covering the pixel portion with the second sealing member Prevent air bubbles from entering,
After that, a method for manufacturing a light emitting device characterized by curing the first sealant and the second sealant. A method for manufacturing a light-emitting device in which a first substrate provided with a pixel portion having a plurality of light-emitting elements and a second substrate having a light-transmitting property are bonded to each other,
Forming a first sealing material on the first substrate so as to surround the pixel portion and to have an opening for air bubbles to escape ;
On the first substrate, a second sealing material having translucency is dropped in a region surrounded by the first sealing material,
Attaching the second substrate and the first substrate, said by the second sealing material extruded toward the opening, Utotomoni the pixel portion on covering the pixel portion with the second sealing member Prevent air bubbles from entering,
After that, a method for manufacturing a light emitting device characterized by curing the first sealant and the second sealant.   The method for manufacturing a light-emitting device according to claim 1, wherein a glass substrate is used as the first substrate.   The method for manufacturing a light-emitting device according to claim 1, wherein a plastic substrate is used as the first substrate.   5. The method for manufacturing a light-emitting device according to claim 1, wherein a glass substrate is used as the second substrate.   5. The method for manufacturing a light-emitting device according to claim 1, wherein a plastic substrate is used as the second substrate.   7. The method for manufacturing a light-emitting device according to claim 1, wherein the first sealing material and the second sealing material are cured by irradiating ultraviolet rays.   7. The method for manufacturing a light-emitting device according to claim 1, wherein the first sealing material and the second sealing material are cured by heating.   9. The method for manufacturing a light-emitting device according to claim 1, wherein the second sealant has a viscosity lower than that of the first sealant.   10. The method for manufacturing a light-emitting device according to claim 1, wherein the first sealant includes a filler.   11. The method for manufacturing a light-emitting device according to claim 1, wherein an epoxy resin is used as the second sealant.   12. The first substrate and the second substrate according to claim 1, wherein the first sealing material and the second sealing material are cured along the first sealing material after the first sealing material and the second sealing material are cured. A method for manufacturing a light-emitting device, which includes dividing the substrate.

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