JP2900938B1 - Organic thin film EL panel and manufacturing method thereof - Google Patents
Organic thin film EL panel and manufacturing method thereofInfo
- Publication number
- JP2900938B1 JP2900938B1 JP10159584A JP15958498A JP2900938B1 JP 2900938 B1 JP2900938 B1 JP 2900938B1 JP 10159584 A JP10159584 A JP 10159584A JP 15958498 A JP15958498 A JP 15958498A JP 2900938 B1 JP2900938 B1 JP 2900938B1
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- panel
- film
- organic thin
- conductive pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 238000007789 sealing Methods 0.000 claims abstract description 47
- 239000011347 resin Substances 0.000 claims abstract description 27
- 229920005989 resin Polymers 0.000 claims abstract description 27
- 230000005525 hole transport Effects 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 13
- 238000007738 vacuum evaporation Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000002923 metal particle Substances 0.000 description 7
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 5
- 239000011324 bead Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000861 Mg alloy Inorganic materials 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- -1 α-naphthyl Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
- H10K59/1795—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8721—Metallic sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
【要約】
【課題】 有機薄膜EL素子の封止と陰極の接続を簡潔
に行なえ、かつ素子の劣化のない信頼性のある有機薄膜
ELパネル及びその製造方法を提供する。
【解決手段】 本発明の有機薄膜ELパネルは、少なく
とも一方が透明または半透明の対向する一対の電極間に
正孔輸送層、有機発光層を積層した基板からなる有機薄
膜ELパネルにおいて、この基板を封止する封止キャッ
プの内側に導電パターンが形成され、この導電パターン
と基板上の陰極端子とが電気的に接続されており、かつ
基板と封止キャップとが光硬化性絶縁樹脂により固定さ
れていることを特徴とする。The present invention provides a reliable organic thin-film EL panel that can easily seal an organic thin-film EL element and connect a cathode and does not deteriorate the element, and a method for manufacturing the same. SOLUTION: The organic thin-film EL panel according to the present invention is an organic thin-film EL panel comprising a substrate having a hole transport layer and an organic light-emitting layer laminated between a pair of transparent or translucent opposed electrodes, at least one of which is transparent. A conductive pattern is formed inside the sealing cap that seals, the conductive pattern and the cathode terminal on the substrate are electrically connected, and the substrate and the sealing cap are fixed with a photo-curable insulating resin. It is characterized by having been done.
Description
【0001】[0001]
【発明の属する技術分野】本発明は有機薄膜ELパネル
及びその製造方法に関し、特に輝度ムラが抑制され、長
寿命の有機薄膜ELパネル及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic thin-film EL panel and a method of manufacturing the same, and more particularly to a long-life organic thin-film EL panel in which luminance unevenness is suppressed and a method of manufacturing the same.
【0002】[0002]
【従来の技術】従来、有機薄膜EL素子(EL:Eiectr
oluminecence)を用いた有機薄膜ELパネルにおいて
は、画面内での輝度ムラの発生や、製品寿命が十分では
ないといった問題を有していた。図6は、従来のドット
マトリクスの有機薄膜ELパネルの一例を示す概略図で
ある。この有機薄膜ELパネル1は、透明支持基板2上
に透明電極3、正孔輸送層4及び発光層5からなる有機
積層膜を有し、透明電極3と直行する方向に陰極6が設
けられた基板を封止キャップ7により封止することで構
成されている。この有機薄膜ELパネル1においては、
陰極6の配線抵抗による電圧降下が大きい為、フレキシ
ブルプリント基板10の接続部近傍のEL素子と、フレ
キシブルプリント基板10の接続部から離れた位置にあ
るEL素子とでは、素子にかかる電圧にズレが生じ、輝
度ムラが起きてしまう恐れがあった。また、この輝度ム
ラは表示画面が大きくなるほど生じやすくなる。2. Description of the Related Art Conventionally, organic thin film EL devices (EL: Eiectr
In the organic thin film EL panel using the luminosity, there is a problem that luminance unevenness occurs in a screen and a product life is not sufficient. FIG. 6 is a schematic view showing an example of a conventional dot matrix organic thin film EL panel. This organic thin film EL panel 1 has an organic laminated film composed of a transparent electrode 3, a hole transport layer 4, and a light emitting layer 5 on a transparent support substrate 2, and a cathode 6 is provided in a direction perpendicular to the transparent electrode 3. The substrate is sealed by a sealing cap 7. In this organic thin film EL panel 1,
Since the voltage drop due to the wiring resistance of the cathode 6 is large, there is a deviation in the voltage applied to the EL element between the EL element near the connection portion of the flexible printed circuit board 10 and the EL element at a position away from the connection portion of the flexible printed circuit board 10. This may cause uneven brightness. Further, this luminance unevenness is more likely to occur as the display screen becomes larger.
【0003】この対策のために、配線抵抗の小さな配線
で配線抵抗の大きなパターンの両端を接続する技術が提
案されている(特開昭62−237484号公報)。ま
た、特開平9−219288号公報では、図7に示すよ
うに、スルーホールを介して一方の面の導電パターンと
他方の面の導電パターンとが互いに電気的に接続された
両面基板16とガラス基板12とを外周部にて接合して
封止すると共に、一方の面の導電パターンを陽極及び陰
極に接続する方法が提案されている。As a countermeasure for this, there has been proposed a technique of connecting both ends of a pattern having a large wiring resistance with a wiring having a small wiring resistance (Japanese Patent Application Laid-Open No. 62-237484). In Japanese Patent Application Laid-Open No. 9-219288, as shown in FIG. 7, a double-sided substrate 16 in which a conductive pattern on one surface and a conductive pattern on the other surface are electrically connected to each other through a through-hole is used. A method has been proposed in which a substrate 12 is joined and sealed at an outer peripheral portion and a conductive pattern on one surface is connected to an anode and a cathode.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、この手
法では、ガラス基板12と両面基板16とを外周部で接
続する際、あるいは陰極6の端子と導電パターン13を
接続する際に、クリーム半田や半田ボールを用いて、恒
温槽で溶融させて接続しているため、熱の影響により有
機材料が結晶化してしまい、寿命や特性を悪化させてし
まう恐れがあった。また二重に接続するために、接続が
複雑になり工数がかかるという問題があった。上記の点
に鑑み、本発明は、有機薄膜EL素子の封止と陰極の接
続を簡潔に行うことができ、かつ素子の劣化のない信頼
性の高い有機薄膜ELパネル及びその製造方法を提供す
ることを目的とする。However, in this method, when the glass substrate 12 and the double-sided substrate 16 are connected at the outer peripheral portion or when the terminal of the cathode 6 is connected to the conductive pattern 13, cream solder or solder is used. Since the connection is made by using a ball and melting in a constant temperature bath, the organic material is crystallized by the influence of heat, and there is a possibility that the life and the characteristics are deteriorated. In addition, there is a problem that the connection is complicated and the number of steps is increased due to the double connection. In view of the above points, the present invention provides a highly reliable organic thin-film EL panel that can easily seal an organic thin-film EL element and connect a cathode and does not deteriorate the element, and a method of manufacturing the same. The purpose is to:
【0005】[0005]
【課題を解決するための手段】本発明に係る有機薄膜E
Lパネルは、少なくとも一方が透明または半透明の対向
する一対の電極間に正孔輸送層、有機発光層を積層した
基板からなる有機薄膜ELパネルにおいて、この基板を
封止する封止キャップの内側に導電パターンが形成さ
れ、この導電パターンと基板上の陰極端子とが互いの両
端に電気的に接続されており、かつ基板と封止キャップ
とが光硬化性絶縁樹脂により固定されていることを特徴
とする。このような有機薄膜ELパネルは、基板を封止
する封止キャップの内側に導電パターンを形成し、その
パターンと基板上の陰極端子の互いの両端を電気的に接
続し、かつ光硬化性絶縁樹脂により封止を行うことで製
造することができる。An organic thin film E according to the present invention is provided.
The L panel is an organic thin-film EL panel comprising a substrate in which a hole transport layer and an organic light-emitting layer are laminated between a pair of transparent or translucent opposed electrodes, at least one of which is inside a sealing cap for sealing the substrate. That the conductive pattern and the cathode terminal on the substrate are electrically connected to each other at both ends, and that the substrate and the sealing cap are fixed by a photocurable insulating resin. Features. In such an organic thin film EL panel, a conductive pattern is formed inside a sealing cap for sealing a substrate, and both ends of the pattern and a cathode terminal on the substrate are electrically connected to each other. It can be manufactured by sealing with a resin.
【0006】また、本発明に係る有機薄膜ELパネル
は、少なくとも一方が透明または半透明の対向する一対
の電極間に正孔注入層、正孔輸送層、有機発光層を積層
した基板からなる有機薄膜ELパネルにおいて、この基
板を封止する封止キャップの内側に導電パターンが形成
され、この導電パターンと基板上の陰極端子とが互いの
両端に電気的に接続されており、かつ基板と封止キャッ
プとが光硬化性絶縁樹脂により固定されていることを特
徴とする。このような有機薄膜ELパネルは、基板を封
止する封止キャップの内側に導電パターンを形成し、そ
のパターンと基板上の陰極端子の互いの両端を電気的に
接続し、かつ光硬化性絶縁樹脂により封止を行うことで
製造することができる。An organic thin-film EL panel according to the present invention is an organic thin-film EL panel comprising a substrate having a hole injection layer, a hole transport layer, and an organic light-emitting layer laminated between a pair of transparent or translucent opposed electrodes. In the thin-film EL panel, a conductive pattern is formed inside a sealing cap for sealing the substrate, and the conductive pattern and a cathode terminal on the substrate are electrically connected to both ends of the substrate. The stop cap is fixed with a photocurable insulating resin. In such an organic thin film EL panel, a conductive pattern is formed inside a sealing cap for sealing a substrate, and both ends of the pattern and a cathode terminal on the substrate are electrically connected to each other. It can be manufactured by sealing with a resin.
【0007】さらに、本発明に係る有機薄膜ELパネル
は、少なくとも一方が透明または半透明の対向する一対
の電極間に正孔輸送層、有機発光層、電子輸送層を積層
した基板からなる有機薄膜ELパネルにおいて、この基
板を封止する封止キャップの内側に導電パターンが形成
され、この導電パターンと基板上の陰極端子とが互いの
両端に電気的に接続されており、かつ基板と封止キャッ
プとが光硬化性絶縁樹脂により固定されていることを特
徴とする。このような有機薄膜ELパネルは、基板を封
止する封止キャップの内側に導電パターンを形成し、そ
のパターンと基板上の陰極端子の互いの両端を電気的に
接続し、かつ光硬化性絶縁樹脂により封止を行うことで
製造することができる。Further, the organic thin film EL panel according to the present invention comprises an organic thin film comprising a substrate having a hole transport layer, an organic light emitting layer, and an electron transport layer laminated between a pair of electrodes, at least one of which is transparent or translucent. In the EL panel, a conductive pattern is formed inside a sealing cap for sealing the substrate, and the conductive pattern and a cathode terminal on the substrate are electrically connected to both ends of the EL panel. The cap and the cap are fixed by a photocurable insulating resin. In such an organic thin film EL panel, a conductive pattern is formed inside a sealing cap for sealing a substrate, and both ends of the pattern and a cathode terminal on the substrate are electrically connected to each other. It can be manufactured by sealing with a resin.
【0008】上記のような有機薄膜ELパネルにおいて
は、パネル表示の輝度ムラを抑制することができる。従
来のように、陰極電極への電力の供給がEL素子の一方
の辺側だけから行われた場合、陰極の配線抵抗が高い為
に電圧降下がおき、EL素子の位置により発光輝度が異
なる恐れがあるが、配線抵抗の小さい導電パターンを基
板の両端で接続することで、駆動回路側からみたEL素
子の陰極の配線抵抗を下げることができる。また、この
ような有機薄膜ELパネルにおいては、EL素子の劣化
を抑えることができる。従来技術では封止や接続におい
て半田を用いているため、恒温槽などにより半田を溶融
させる際、EL素子にまで熱がかかり有機材料を劣化さ
せる恐れがあるが、上記有機薄膜ELパネルにおいて
は、封止や接続に光硬化性樹脂を用いているためEL素
子への熱の影響を避けることができる。さらに、このよ
うな有機薄膜ELパネルにおいては、封止と接続を一度
に行えることにより作業工数が簡潔になり、接続箇所を
減少させることができる。また配線が不活性ガス中にあ
り信頼性を向上させることができる。[0008] In the organic thin-film EL panel as described above, luminance unevenness of panel display can be suppressed. When power is supplied to the cathode electrode from only one side of the EL element as in the conventional case, a voltage drop occurs due to the high wiring resistance of the cathode, and the emission luminance may vary depending on the position of the EL element. However, by connecting conductive patterns having low wiring resistance at both ends of the substrate, the wiring resistance of the cathode of the EL element viewed from the drive circuit side can be reduced. Further, in such an organic thin film EL panel, deterioration of the EL element can be suppressed. In the prior art, since solder is used for sealing and connection, when the solder is melted in a constant temperature bath or the like, heat may be applied to the EL element and the organic material may be degraded. Since a photocurable resin is used for sealing and connection, the influence of heat on the EL element can be avoided. Furthermore, in such an organic thin-film EL panel, since sealing and connection can be performed at once, the number of operation steps is simplified, and the number of connection points can be reduced. Further, the reliability can be improved because the wiring is in an inert gas.
【0009】[0009]
【発明の実施の形態】以下、図面により本発明について
詳細に説明するが、本発明はこれらの実施形態例のみに
限定されるものではない。図1(a)は本実施の形態の
有機薄膜ELパネルを示す断面図であり、図1(b)は
その分解斜視図である。図1に示すように、透明支持基
板21上には陽極として透明電極22が形成され、その
上に正孔輸送層23、発光層24が真空蒸着法により形
成されている。発光層24の上には、陰極25として仕
事関数の小さい金属が成膜されており、これにより有機
薄膜ELパネルの基板が構成されている。封止キャップ
26の内側には、低抵抗の導電パターン27が、陰極2
5と同じピッチでパターニングされている。この封止キ
ャップ26の周縁部と透明支持基板21とは金属粒子2
9を分散した光硬化性絶縁樹脂28により接続されてい
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the drawings, but the present invention is not limited to only these embodiments. FIG. 1A is a cross-sectional view showing an organic thin film EL panel according to the present embodiment, and FIG. 1B is an exploded perspective view thereof. As shown in FIG. 1, a transparent electrode 22 is formed as an anode on a transparent support substrate 21, and a hole transport layer 23 and a light emitting layer 24 are formed thereon by a vacuum deposition method. On the light-emitting layer 24, a metal having a small work function is formed as the cathode 25, thereby forming a substrate of the organic thin-film EL panel. Inside the sealing cap 26, a low-resistance conductive pattern 27 is
5 are patterned at the same pitch. The periphery of the sealing cap 26 and the transparent support substrate 21 are
9 are dispersed by a photo-curable insulating resin 28 in which they are dispersed.
【0010】次に、図1に示す本実施の形態の有機薄膜
ELパネルの製造方法について記す。ガラス等の透明支
持基板21に、陽極としてスパッタ法によりITO等の
透明電極22を形成する。その上に正孔輸送層23を真
空蒸着法により形成し、さらにその上に発光層24を真
空蒸着法により形成し有機積層膜とする。次に、マグネ
シウム:銀やリチウム:アルミニウム等の仕事関数の小
さい金属、またはそれらの合金を原料に、抵抗加熱法ま
たは電子ビーム加熱法を用いて陰極25を有機膜上に成
膜し、有機薄膜ELパネルの基板を作成する。Next, a method of manufacturing the organic thin film EL panel of the present embodiment shown in FIG. 1 will be described. A transparent electrode 22 made of ITO or the like is formed as an anode on a transparent support substrate 21 made of glass or the like by a sputtering method. A hole transport layer 23 is formed thereon by a vacuum evaporation method, and a light emitting layer 24 is further formed thereon by a vacuum evaporation method to form an organic laminated film. Next, a cathode 25 is formed on the organic film by using a metal having a small work function such as magnesium: silver or lithium: aluminum, or an alloy thereof, by using a resistance heating method or an electron beam heating method. Create a substrate for the EL panel.
【0011】ガラス基板等からなる封止キャップ26の
内側に、導電パターン27を透明支持基板21上の陰極
25と同ピッチになるように蒸着する。不活性ガス雰囲
気中で、陰極25の端子と導電パターン27の位置を合
わせて仮固定し、この状態のまま紫外線を照射して樹脂
28を硬化させることで、有機薄膜ELパネル21を得
る。A conductive pattern 27 is deposited on the inside of a sealing cap 26 made of a glass substrate or the like so as to have the same pitch as the cathode 25 on the transparent support substrate 21. In an inert gas atmosphere, the terminal of the cathode 25 and the position of the conductive pattern 27 are temporarily fixed and fixed, and in this state, the resin 28 is cured by irradiating ultraviolet rays to obtain the organic thin film EL panel 21.
【0012】この封止キャップ26により陰極駆動回路
側から見ると、封止キャップ26の内側に配線された導
電パターン27により、フレキシブルプリント基板30
が陰極25の両端2箇所に接続されている事になり、E
L素子の実効的な陰極ライン抵抗が小さくなり、配線抵
抗によるEL素子の輝度ムラを抑制することができる。
また配線がキャップ26内の不活性ガス中にあるため、
信頼性が向上する。また封止に半田づけを用いていない
ため、EL素子が高温にさらされることがなく素子の劣
化を防ぐことができる。When viewed from the cathode drive circuit side by the sealing cap 26, the flexible printed circuit board 30 is formed by the conductive pattern 27 wired inside the sealing cap 26.
Are connected to two places at both ends of the cathode 25, and E
The effective cathode line resistance of the L element is reduced, and luminance unevenness of the EL element due to wiring resistance can be suppressed.
Also, since the wiring is in the inert gas in the cap 26,
Reliability is improved. In addition, since soldering is not used for sealing, the EL element is not exposed to a high temperature, and deterioration of the element can be prevented.
【0013】[0013]
【実施例】以下、本発明を実施例により具体的に説明す
るが、本発明はこれらの実施例のみに限定されるもので
はない。 (実施例1)本発明の第1の実施例を図2ないし図4に
示す。図2に示すように、厚さ1.1mmの透明支持基
板31に、陽極としてスパッタ法によりITO膜を10
0nm形成し、フォトリソグラフィーとウエットエッチ
ングにより透明電極32を形成した。シート抵抗は15
Ω/□、配線ピッチは0.3mmであった。次に、この
透明支持基板31を真空蒸着装置の基板ホルダーに固定
し、真空蒸着装置内の抵抗加熱ボートに正孔輸送層とし
て、N,N’−ジフェニル−N,N’ビス(α−ナフチ
ル)−1,1−ビフェニル−4,4’−ジアミン(以
下、α−NPDと略記する)を入れ、別の抵抗加熱ボー
トに発光層として、トリス(8−キノリライト)アルミ
ニウム錯体(以下、Alq3と略記する)を入れ、真空
ポンプで真空蒸着装置内を1×10-5Torr以下に排
気した。EXAMPLES Hereinafter, the present invention will be described specifically with reference to examples, but the present invention is not limited to these examples. (Embodiment 1) FIGS. 2 to 4 show a first embodiment of the present invention. As shown in FIG. 2, an ITO film was formed on a transparent support substrate 31 having a thickness of 1.1 mm by sputtering as an anode.
The transparent electrode 32 was formed by photolithography and wet etching. Sheet resistance is 15
Ω / □, and the wiring pitch was 0.3 mm. Next, this transparent support substrate 31 is fixed to a substrate holder of a vacuum evaporation apparatus, and N, N′-diphenyl-N, N′bis (α-naphthyl) is used as a hole transport layer in a resistance heating boat in the vacuum evaporation apparatus. ) -1,1-biphenyl-4,4′-diamine (hereinafter abbreviated as α-NPD), and tris (8-quinolilite) aluminum complex (hereinafter, Alq3; ), And the inside of the vacuum evaporation apparatus was evacuated to 1 × 10 −5 Torr or less with a vacuum pump.
【0014】しかる後、有機EL層を蒸着する範囲を四
角形にくり抜いた金属製のマスクを、透明支持基板31
の表面に固定するように設置した。そして、透明支持基
板31と上記マスクの下方に設置されているα−NPD
の抵抗加熱ボートに電流を流して加熱した。そしてα−
NPD層33が膜厚50nm程度になるように蒸着し
た。その後、Alq3層34を膜厚50nmまで蒸着し
た。このようにして有機EL層を形成し、図2に示す基
板を得た。なお、α−NPD層33は正孔を輸送する層
として機能し、Alq3層34は電子を輸送する層及び
発光層として機能する。ここで、α−NPD及びAlq
3の蒸着膜の厚さがより均一になるようにするには、蒸
着中に透明支持基板31を蒸着ソース源に対して水平な
面内で回転させる方法を挙げることができる。Thereafter, a metal mask in which the area for depositing the organic EL layer is cut out in a rectangular shape is applied to the transparent support substrate 31.
It was installed so as to be fixed to the surface. Then, the α-NPD provided below the transparent support substrate 31 and the mask
Was heated by passing an electric current through the resistance heating boat. And α-
The NPD layer 33 was deposited so as to have a thickness of about 50 nm. Thereafter, an Alq3 layer 34 was deposited to a thickness of 50 nm. Thus, the organic EL layer was formed, and the substrate shown in FIG. 2 was obtained. The α-NPD layer 33 functions as a layer for transporting holes, and the Alq3 layer 34 functions as a layer for transporting electrons and a light emitting layer. Here, α-NPD and Alq
In order to make the thickness of the deposited film 3 more uniform, a method of rotating the transparent support substrate 31 in a plane horizontal to the deposition source during the deposition can be mentioned.
【0015】次に、SUS430製のシャドウマスクを
あらかじめ真空蒸着装置内に配置しておき、シャドウマ
スクの上に有機EL層を形成した透明支持基板31を設
置した。シャドウマスクにはストライプ状遮蔽部が形成
されスリット部が設けられている。そして透明支持基板
31上のアノードラインに直交する方向にストライプ状
遮蔽部が形成されている。次に、真空蒸着装置内の抵抗
加熱ボートにマグネシウムを入れ、また別の抵抗加熱ボ
ートに銀を入れて、マグネシウムと銀の比率が10:1
となる蒸着速度で一緒に蒸着した。次に透明支持基板3
1をシャドウマスクから引き離すことによりマグネシウ
ムと銀の合金からなるストライプ状の陰極35を有機E
L層の上に形成した。Next, a shadow mask made of SUS430 was previously placed in a vacuum evaporation apparatus, and a transparent support substrate 31 having an organic EL layer formed thereon was placed on the shadow mask. The shadow mask has a stripe-shaped shielding portion and a slit portion. Then, a stripe-shaped shielding portion is formed on the transparent support substrate 31 in a direction orthogonal to the anode line. Next, magnesium was put in a resistance heating boat in a vacuum evaporation apparatus, and silver was put in another resistance heating boat, and the ratio of magnesium to silver was 10: 1.
Were deposited together at a deposition rate of Next, the transparent support substrate 3
1 is separated from the shadow mask to form a striped cathode 35 made of an alloy of magnesium and silver from organic E.
It was formed on the L layer.
【0016】次に、封止用のガラスキャップ36の内側
に陰極35と同じピッチで導体をパターニングする。シ
ャドウマスク43にはストライプ状遮蔽部が形成され、
スリット部が設けられており、またガラスキャップ36
の形状に合わされている。図3に示すように、シャドウ
マスク43のストライプ状遮蔽部がガラスキャップ36
上にしっかり固定されるように磁石44で引きつける。
そのためシャドウマスク43は磁性材料であることが望
ましい。次に抵抗加熱ボートに銅を入れ電流を流して加
熱し、銅を10μmの厚さに蒸着した。また導電パター
ンは、蒸着法以外にもイオンプレーティング法やスパッ
タ法などにより形成される。ガラスキャップ36をシャ
ドウマスク43から引き離すことにより陰極35と同ピ
ッチのストライプ状の導電パターン37をガラスキャッ
プ36内に形成した。Next, conductors are patterned at the same pitch as the cathode 35 inside the glass cap 36 for sealing. A stripe-shaped shielding portion is formed on the shadow mask 43,
A slit portion is provided, and a glass cap 36 is provided.
The shape is matched. As shown in FIG. 3, the stripe-shaped shielding portion of the shadow mask 43 is
Attract by magnet 44 so that it is firmly fixed on top.
Therefore, the shadow mask 43 is preferably made of a magnetic material. Next, copper was put into a resistance heating boat, heated by flowing an electric current, and copper was deposited to a thickness of 10 μm. The conductive pattern is formed by an ion plating method, a sputtering method, or the like in addition to the vapor deposition method. By separating the glass cap 36 from the shadow mask 43, a stripe-shaped conductive pattern 37 having the same pitch as the cathode 35 was formed in the glass cap 36.
【0017】次に、ガラスキャップ36の電極接続部
に、5μm程度の粒径の金属粒子39を分散させた光硬
化性絶縁樹脂38をディスペンサーで均一に塗布した。
光硬化性絶縁樹脂38は変性アクリレート系のものを用
いた。また金属粒子39の代わりにプラスチックビーズ
に金属メッキしたものを用いてもよい。そして窒素ガス
のような不活性ガス雰囲気中で透明支持基板31とガラ
スキャップ36の電極パターンを位置合わせし、30k
g/cm2程度で加圧した。加圧したまま、透明支持基
板31の電極の反対面から紫外光を照射し、光硬化性絶
縁樹脂38を硬化させた。図4のように陰極35と導電
パターン37は金属粒子39により導通され、隙間部分
は光硬化性絶縁樹脂38により絶縁された状態で、ガラ
スキャップ36により透明支持基板31は封止される。
硬化後、透明支持基板31の電極とガラスキャップ36
の電極は機械的に保持され電気的導通を得る。このよう
にして得られた上記パネルの片側にフレキシブルプリン
ト基板40を接続し、駆動させたところ、表示面すべて
において均一な輝度の発光を有するパネルが得られた。Next, a photo-curable insulating resin 38 in which metal particles 39 having a particle size of about 5 μm were dispersed was uniformly applied to the electrode connecting portion of the glass cap 36 with a dispenser.
As the photocurable insulating resin 38, a modified acrylate resin was used. Further, instead of the metal particles 39, a metal bead plated with plastic beads may be used. Then, the electrode patterns of the transparent support substrate 31 and the glass cap 36 are aligned in an inert gas atmosphere such as nitrogen gas,
Pressure was applied at about g / cm 2 . Ultraviolet light was irradiated from the opposite surface of the transparent support substrate 31 from the electrode while the pressure was being applied to cure the photocurable insulating resin 38. As shown in FIG. 4, the cathode 35 and the conductive pattern 37 are electrically connected by the metal particles 39, and the transparent support substrate 31 is sealed by the glass cap 36 while the gap is insulated by the photocurable insulating resin 38.
After curing, the electrodes of the transparent support substrate 31 and the glass cap 36
Are mechanically held to obtain electrical continuity. The flexible printed circuit board 40 was connected to one side of the panel thus obtained, and was driven. As a result, a panel having uniform luminance emission on all display surfaces was obtained.
【0018】(実施例2)本発明の第2の実施例を図5
に示す。厚さ1.1mmの透明支持基板51に陽極とし
てスパッタ法によりITO膜を100nm形成し、フォ
トリソグラフィーとウエットエッチングにより透明電極
52を形成した。シート抵抗は15Ω/□、配線ピッチ
は0.3mmであった。次に、この透明支持基板51を
真空蒸着装置の基板ホルダーに固定し、真空蒸着装置内
の抵抗加熱ボートに正孔輸送層としてα−NPDを入
れ、別の抵抗加熱ボートに発光層としてAlq3を入
れ、真空ポンプで真空蒸着装置内を1×10-5Torr
以下に排気した。(Embodiment 2) FIG. 5 shows a second embodiment of the present invention.
Shown in An ITO film having a thickness of 100 nm was formed as an anode on a transparent support substrate 51 having a thickness of 1.1 mm by sputtering, and a transparent electrode 52 was formed by photolithography and wet etching. The sheet resistance was 15Ω / □, and the wiring pitch was 0.3 mm. Next, this transparent support substrate 51 was fixed to a substrate holder of a vacuum evaporation apparatus, α-NPD was put as a hole transport layer in a resistance heating boat in the vacuum evaporation apparatus, and Alq3 was used as a light emitting layer in another resistance heating boat. And the inside of the vacuum deposition apparatus is 1 × 10 −5 Torr by a vacuum pump.
Exhausted below.
【0019】しかる後、有機EL層を蒸着する範囲を四
角形にくり抜いた金属製のマスクを、透明支持基板51
の表面に固定するように設置した。そして透明支持基板
51と上記マスクの下方に設置されているα−NPDの
抵抗加熱ボートに電流を流して加熱し、α−NPD層5
3が膜厚50nm程度になるように蒸着した。その後、
Alq3層54を膜厚50nmまで蒸着する。次に、S
US430製のシャドウマスクをあらかじめ真空蒸着装
置内に配置しておき、シャドウマスクの上に有機EL層
を形成した透明支持基板51を設置した。シャドウマス
クにはストライプ状遮蔽部が形成されスリット部が設け
られている。そして透明支持基板51上のアノードライ
ンに直交する方向にストライプ状遮蔽部が形成されてい
る。次に、真空蒸着装置内の抵抗加熱ボートにマグネシ
ウムを入れ、別の抵抗加熱ボートに銀を入れてマグネシ
ウムと銀の比率を10:1となる蒸着速度で一緒に蒸着
した。次に透明支持基板をシャドウマスクから引き離す
ことによりマグネシウムと銀の合金からなるストライプ
状の陰極55を有機EL層の上に形成した。Thereafter, a metal mask in which the area where the organic EL layer is to be vapor-deposited is cut out in a rectangular shape is attached to the transparent support substrate 51.
It was installed so as to be fixed to the surface. Then, an electric current is applied to the transparent support substrate 51 and the α-NPD resistance heating boat provided below the mask to heat the α-NPD resistance heating boat.
3 was deposited so as to have a film thickness of about 50 nm. afterwards,
An Alq3 layer 54 is deposited to a thickness of 50 nm. Next, S
A US430 shadow mask was placed in a vacuum evaporation apparatus in advance, and a transparent support substrate 51 having an organic EL layer formed thereon was placed on the shadow mask. The shadow mask has a stripe-shaped shielding portion and a slit portion. Then, a stripe-shaped shielding portion is formed on the transparent support substrate 51 in a direction orthogonal to the anode line. Next, magnesium was put in a resistance heating boat in a vacuum evaporation apparatus, silver was put in another resistance heating boat, and magnesium and silver were evaporated together at an evaporation rate of 10: 1. Next, the transparent support substrate was separated from the shadow mask to form a striped cathode 55 made of an alloy of magnesium and silver on the organic EL layer.
【0020】次に、SUS430製の金属キャップ56
の内面全体にSiOなどにより絶縁層61を成膜してお
く。そのSiO層61の上に陰極55と同じピッチで導
体をパターニングする。シャドウマスクには、陰極55
と同じピッチのストライプ状遮蔽部が形成されたスリッ
ト部が設けられており、またガラスキャップ56の形状
に合わされている。そして導電パターン57として、銅
を10μmの厚さに蒸着した。ガラスキャップ56をシ
ャドウマスクから引き離すことにより陰極55と同ピッ
チのストライプ状の導電パターン57をキャップ内に形
成した。Next, a metal cap 56 made of SUS430 is used.
An insulating layer 61 is formed on the entire inner surface of the device from SiO or the like. A conductor is patterned on the SiO layer 61 at the same pitch as the cathode 55. The cathode 55 is used for the shadow mask.
A slit portion having a stripe-shaped shielding portion having the same pitch as that of the glass cap 56 is provided. Then, as the conductive pattern 57, copper was deposited to a thickness of 10 μm. By separating the glass cap 56 from the shadow mask, a striped conductive pattern 57 having the same pitch as the cathode 55 was formed in the cap.
【0021】次に、ガラスキャップ56の電極接続部
に、5μm程度の金属粒子59を分散させた光硬化性絶
縁樹脂58をディスペンサーで均一に塗布した。光硬化
性絶縁樹脂58は変性アクリレート系のものを用いた。
また金属粒子59の代わりにプラスチックビーズに金属
メッキしたものを用いてもよい。そして窒素ガスのよう
な不活性ガス雰囲気中で透明支持基板51とガラスキャ
ップ56の電極パターンを位置合わせし、30kg/c
m2程度で加圧する。加圧したまま、パネル電極の反対
面から紫外光を照射し光硬化性絶縁樹脂58を硬化させ
る。Next, a photo-curable insulating resin 58 in which metal particles 59 of about 5 μm were dispersed was uniformly applied to the electrode connecting portion of the glass cap 56 with a dispenser. As the photocurable insulating resin 58, a modified acrylate resin was used.
Further, instead of the metal particles 59, plastic beads obtained by metal plating on plastic beads may be used. Then, the electrode pattern of the transparent support substrate 51 and the electrode pattern of the glass cap 56 are aligned in an inert gas atmosphere such as a nitrogen gas, and 30 kg / c.
pressurized with m 2 about. While being pressurized, ultraviolet light is irradiated from the opposite surface of the panel electrode to cure the photocurable insulating resin 58.
【0022】図5のように、導電パターン57が金属粒
子59により陰極55と導通し、隙間は光硬化性絶縁樹
脂58により絶縁された状態で、透明支持基板51はガ
ラスキャップ56により封止される。樹脂58の硬化
後、透明支持基板51上の電極とガラスキャップ56の
電極は機械的に保持され、電気的導通を得る。このよう
にして得られた上記パネルの片側にフレキシブルプリン
ト基板60を接続し、駆動させたところ、表示面すべて
において均一な輝度の発光を有するパネルが得られた。As shown in FIG. 5, the conductive pattern 57 is electrically connected to the cathode 55 by the metal particles 59, and the gap is insulated by the photocurable insulating resin 58. You. After the curing of the resin 58, the electrodes on the transparent support substrate 51 and the electrodes on the glass cap 56 are mechanically held to obtain electrical continuity. The flexible printed circuit board 60 was connected to one side of the panel thus obtained, and was driven. As a result, a panel having uniform luminance emission on all display surfaces was obtained.
【0023】[0023]
【発明の効果】以上詳細に説明した通り、本発明の有機
薄膜ELパネルにおいては、パネル表示の輝度ムラを抑
制することができる。配線抵抗の小さい導電パターンを
基板の両端に接続することで、駆動回路側からみたEL
素子の陰極の配線抵抗を下げることができる。また、本
発明の有機薄膜ELパネルにおいては、封止や接続に光
硬化性樹脂を用いているためEL素子への熱の影響がな
く、EL素子の劣化を抑えることができる。さらに、本
発明の有機薄膜ELパネルにおいては、封止と接続を一
度に行えることにより作業工数が簡潔になり、接続箇所
を減少させることができる。また配線が不活性ガス中に
あり信頼性を向上させることができる。As described in detail above, in the organic thin-film EL panel of the present invention, it is possible to suppress unevenness in panel display luminance. By connecting conductive patterns with low wiring resistance to both ends of the substrate, the EL viewed from the drive circuit side
The wiring resistance of the cathode of the device can be reduced. Further, in the organic thin film EL panel of the present invention, since a photocurable resin is used for sealing and connection, there is no influence of heat on the EL element, and deterioration of the EL element can be suppressed. Further, in the organic thin-film EL panel of the present invention, since the sealing and the connection can be performed at once, the number of operation steps is simplified, and the number of connection points can be reduced. Further, the reliability can be improved because the wiring is in an inert gas.
【図1】 図1(a)は本実施の形態の有機薄膜ELパ
ネルを示す断面図であり、図1(b)はその分解斜視図
である。FIG. 1A is a cross-sectional view showing an organic thin-film EL panel according to the present embodiment, and FIG. 1B is an exploded perspective view thereof.
【図2】 第1の実施例の基板を示す断面図である。FIG. 2 is a sectional view showing a substrate according to the first embodiment.
【図3】 第1の実施例のガラスキャップを示す断面図
である。FIG. 3 is a sectional view showing a glass cap of the first embodiment.
【図4】 第1の実施例の有機薄膜ELパネルを示す断
面図である。FIG. 4 is a cross-sectional view illustrating an organic thin-film EL panel according to a first embodiment.
【図5】 第2の実施例の有機薄膜ELパネルを示す断
面図である。FIG. 5 is a sectional view showing an organic thin film EL panel according to a second embodiment.
【図6】 従来のドットマトリクスの有機薄膜ELパネ
ルの一例を示す概略図である。FIG. 6 is a schematic view showing an example of a conventional dot matrix organic thin film EL panel.
【図7】 特開平9−219288号公報を説明する概
略図である。FIG. 7 is a schematic diagram illustrating Japanese Patent Application Laid-Open No. 9-219288.
21 透明支持基板 22 透明電極 23 正孔輸送層 24 発光層 25 陰極 26 封止キャップ 27 導電パターン 28 光硬化性絶縁樹脂 29 金属粒子 30 フレキシブルプリント基板 DESCRIPTION OF SYMBOLS 21 Transparent support substrate 22 Transparent electrode 23 Hole transport layer 24 Light emitting layer 25 Cathode 26 Sealing cap 27 Conductive pattern 28 Photocurable insulating resin 29 Metal particles 30 Flexible printed board
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平7−153571(JP,A) 特開 平10−233283(JP,A) 特開 平8−124677(JP,A) 特開 平2−8886(JP,A) 実開 平1−107898(JP,U) (58)調査した分野(Int.Cl.6,DB名) H05B 33/00 - 33/28 ────────────────────────────────────────────────── ─── Continuation of front page (56) References JP-A-7-153571 (JP, A) JP-A-10-233283 (JP, A) JP-A 8-124677 (JP, A) JP-A-2- 8886 (JP, A) Japanese Utility Model 1-107898 (JP, U) (58) Field surveyed (Int. Cl. 6 , DB name) H05B 33/00-33/28
Claims (6)
向する一対の電極間に正孔輸送層、有機発光層を積層し
た基板からなる有機薄膜ELパネルにおいて、 前記基板を封止する封止キャップの内側に導電パターン
が形成され、該導電パターンと基板上の陰極端子とが互
いの両端に電気的に接続されており、かつ前記基板と前
記封止キャップとが光硬化性絶縁樹脂により固定されて
いることを特徴とする有機薄膜ELパネル。1. An organic thin-film EL panel comprising a substrate having a hole transport layer and an organic light-emitting layer laminated between a pair of electrodes, at least one of which is transparent or translucent, wherein a sealing cap for sealing the substrate is provided. A conductive pattern is formed inside, the conductive pattern and the cathode terminal on the substrate are electrically connected to both ends, and the substrate and the sealing cap are fixed by a photocurable insulating resin. An organic thin-film EL panel characterized in that:
向する一対の電極間に正孔輸送層、有機発光層を積層し
た基板からなる有機薄膜ELパネルにおいて、 前記基板を封止する封止キャップの内側に導電パターン
を形成し、該パターンと前記基板上の陰極端子の互いの
両端を電気的に接続し、かつ光硬化性絶縁樹脂により封
止を行うことを特徴とする有機薄膜ELパネルの製造方
法。2. An organic thin-film EL panel comprising a substrate in which a hole transport layer and an organic light-emitting layer are laminated between a pair of electrodes, at least one of which is transparent or translucent, wherein a sealing cap for sealing the substrate is provided. A method of manufacturing an organic thin-film EL panel, comprising: forming a conductive pattern on the inside; electrically connecting both ends of the pattern and a cathode terminal on the substrate; and sealing with a photocurable insulating resin. Method.
向する一対の電極間に正孔注入層、正孔輸送層、有機発
光層を積層した基板からなる有機薄膜ELパネルにおい
て、 前記基板を封止する封止キャップの内側に導電パターン
が形成され、該導電パターンと基板上の陰極端子とが互
いの両端に電気的に接続されており、かつ前記基板と前
記封止キャップとが光硬化性絶縁樹脂により固定されて
いることを特徴とする有機薄膜ELパネル。3. An organic thin-film EL panel comprising a substrate having a hole injection layer, a hole transport layer, and an organic light-emitting layer laminated between a pair of electrodes, at least one of which is transparent or translucent, wherein the substrate is sealed. A conductive pattern is formed inside a sealing cap to be formed, the conductive pattern and a cathode terminal on a substrate are electrically connected to both ends of the sealing cap, and the substrate and the sealing cap are in a light-curable insulating state. An organic thin-film EL panel fixed by a resin.
向する一対の電極間に正孔注入層、正孔輸送層、有機発
光層を積層した基板からなる有機薄膜ELパネルにおい
て、 前記基板を封止する封止キャップの内側に導電パターン
を形成し、該パターンと前記基板上の陰極端子の互いの
両端を電気的に接続し、かつ光硬化性絶縁樹脂により封
止を行うことを特徴とする有機薄膜ELパネルの製造方
法。4. An organic thin-film EL panel comprising a substrate having a hole injection layer, a hole transport layer, and an organic light-emitting layer laminated between a pair of opposed electrodes, at least one of which is transparent or translucent, wherein the substrate is sealed. Forming an electrically conductive pattern inside a sealing cap to be formed, electrically connecting both ends of the pattern and the cathode terminal on the substrate, and performing sealing with a photocurable insulating resin. A method for manufacturing a thin film EL panel.
向する一対の電極間に正孔輸送層、有機発光層、電子輸
送層を積層した基板からなる有機薄膜ELパネルにおい
て、 前記基板を封止する封止キャップの内側に導電パターン
が形成され、該導電パターンと基板上の陰極端子とが互
いの両端に電気的に接続されており、かつ前記基板と前
記封止キャップとが光硬化性絶縁樹脂により固定されて
いることを特徴とする有機薄膜ELパネル。5. An organic thin-film EL panel comprising a substrate in which a hole transport layer, an organic light-emitting layer, and an electron transport layer are laminated between a pair of opposed electrodes, at least one of which is transparent or translucent, wherein the substrate is sealed. A conductive pattern is formed inside the sealing cap, the conductive pattern and a cathode terminal on the substrate are electrically connected to both ends, and the substrate and the sealing cap are formed of a photocurable insulating resin. An organic thin-film EL panel characterized by being fixed by:
向する一対の電極間に正孔輸送層、有機発光層、電子輸
送層を積層した基板からなる有機薄膜ELパネルにおい
て、 前記基板を封止する封止キャップの内側に導電パターン
を形成し、該パターンと前記基板上の陰極端子の互いの
両端を電気的に接続し、かつ光硬化性絶縁樹脂により封
止を行うことを特徴とする有機薄膜ELパネルの製造方
法。6. An organic thin-film EL panel comprising a substrate in which a hole transport layer, an organic light-emitting layer, and an electron transport layer are laminated between a pair of opposed electrodes, at least one of which is transparent or translucent, wherein the substrate is sealed. An organic thin film, wherein a conductive pattern is formed inside a sealing cap, both ends of the pattern and a cathode terminal on the substrate are electrically connected, and sealing is performed with a photocurable insulating resin. EL panel manufacturing method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10159584A JP2900938B1 (en) | 1998-06-08 | 1998-06-08 | Organic thin film EL panel and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10159584A JP2900938B1 (en) | 1998-06-08 | 1998-06-08 | Organic thin film EL panel and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2900938B1 true JP2900938B1 (en) | 1999-06-02 |
JPH11354272A JPH11354272A (en) | 1999-12-24 |
Family
ID=15696914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10159584A Expired - Lifetime JP2900938B1 (en) | 1998-06-08 | 1998-06-08 | Organic thin film EL panel and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2900938B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104867960A (en) * | 2015-04-21 | 2015-08-26 | 京东方科技集团股份有限公司 | Display panel and packaging method thereof, and display apparatus |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3536763B2 (en) * | 2000-02-04 | 2004-06-14 | 日本電気株式会社 | Sealing device |
JP3501218B2 (en) * | 2000-08-11 | 2004-03-02 | 日本電気株式会社 | Flat panel display module and manufacturing method thereof |
JP4682418B2 (en) * | 2000-12-04 | 2011-05-11 | ソニー株式会社 | DISPLAY DEVICE, ELECTRONIC DEVICE, AND DISPLAY DEVICE MANUFACTURING METHOD |
KR100768182B1 (en) * | 2001-10-26 | 2007-10-17 | 삼성에스디아이 주식회사 | Organic electro luminescence device and method of manufacturing the same |
TW515062B (en) * | 2001-12-28 | 2002-12-21 | Delta Optoelectronics Inc | Package structure with multiple glue layers |
JP4545385B2 (en) * | 2002-03-26 | 2010-09-15 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
US7190335B2 (en) | 2002-03-26 | 2007-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
TWI362231B (en) * | 2003-11-21 | 2012-04-11 | Semiconductor Energy Lab | Display device |
JP4780950B2 (en) * | 2003-11-21 | 2011-09-28 | 株式会社半導体エネルギー研究所 | Display device |
KR100759758B1 (en) | 2006-04-11 | 2007-09-20 | 삼성전자주식회사 | Display device and manufacturing method therof |
JP2007335099A (en) * | 2006-06-12 | 2007-12-27 | Fujikura Ltd | Light-emitting element and its manufacturing method |
JP2008047340A (en) * | 2006-08-11 | 2008-02-28 | Dainippon Printing Co Ltd | Organic electroluminescence device |
JP5298856B2 (en) * | 2006-11-21 | 2013-09-25 | コニカミノルタ株式会社 | Organic electroluminescence panel |
CN100459216C (en) * | 2007-03-21 | 2009-02-04 | 吉林大学 | Organic electroluminescent white light device with multi-luminescent layer |
KR100907414B1 (en) | 2008-01-18 | 2009-07-10 | 삼성모바일디스플레이주식회사 | Organic light emitting display device |
JP5451439B2 (en) * | 2010-02-10 | 2014-03-26 | Lumiotec株式会社 | Organic EL lighting device |
KR101983230B1 (en) | 2012-10-19 | 2019-05-29 | 삼성디스플레이 주식회사 | Organic light emitting display device and the manufacturing method thereof |
JP6061301B2 (en) * | 2013-06-17 | 2017-01-18 | 国立研究開発法人産業技術総合研究所 | Flexible organic EL display device and manufacturing method thereof |
JP2015153581A (en) * | 2014-02-13 | 2015-08-24 | パイオニア株式会社 | Light emitting element |
KR102245304B1 (en) * | 2014-10-28 | 2021-04-27 | 엘지디스플레이 주식회사 | Display device with power supply in cover type |
-
1998
- 1998-06-08 JP JP10159584A patent/JP2900938B1/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104867960A (en) * | 2015-04-21 | 2015-08-26 | 京东方科技集团股份有限公司 | Display panel and packaging method thereof, and display apparatus |
CN104867960B (en) * | 2015-04-21 | 2019-06-04 | 京东方科技集团股份有限公司 | Display panel and its packaging method, display device |
Also Published As
Publication number | Publication date |
---|---|
JPH11354272A (en) | 1999-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2900938B1 (en) | Organic thin film EL panel and manufacturing method thereof | |
US6429585B1 (en) | Organic thin film EL panel and method of manufacturing the same | |
US7825583B2 (en) | Organic electroluminescence display and method for manufacturing the same | |
JP3641963B2 (en) | Organic EL device and manufacturing method thereof | |
KR100501571B1 (en) | Organic light-emitting diode for display and manufacturing method thereof | |
JP2000100577A (en) | Optical element and its manufacture | |
JP2001052858A (en) | Organic el display device | |
KR101001549B1 (en) | Electroluminescence device | |
JP2000243577A (en) | Organic thin film light emitting element | |
JP2000150147A (en) | Manufacture of organic electroluminescence element | |
JPH1187052A (en) | Organic electroluminescence element | |
KR20020076171A (en) | Organic light-emitting device capable of high-quality display | |
JP2001035654A (en) | Display panel and its manufacture | |
JPH09306668A (en) | El element and its manufacture | |
JP2000123971A (en) | Manufacture of organic el | |
JP3904950B2 (en) | Light emitting display device, organic EL display device, and manufacturing method thereof | |
JP3576857B2 (en) | Organic thin film EL device and method of manufacturing the same | |
JPH11307268A (en) | Organic thin film luminescent element and its manufacture | |
JPH10208875A (en) | Organic el element and manufacture therefor | |
JPH11219782A (en) | El element and its manufacture | |
JPH11312581A (en) | El element and its manufacture | |
JP2000148090A (en) | Organic el element and its production | |
JP2001217073A (en) | Organic electric field light emitting device | |
JP2000243579A (en) | Organic el element and its manufacture | |
JPH10149879A (en) | Substrate structure for organic el element and its forming method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990216 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080319 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090319 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090319 Year of fee payment: 10 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090319 Year of fee payment: 10 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090319 Year of fee payment: 10 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100319 Year of fee payment: 11 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110319 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110319 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120319 Year of fee payment: 13 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130319 Year of fee payment: 14 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130319 Year of fee payment: 14 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130319 Year of fee payment: 14 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130319 Year of fee payment: 14 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140319 Year of fee payment: 15 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |