JPH09306668A - El element and its manufacture - Google Patents
El element and its manufactureInfo
- Publication number
- JPH09306668A JPH09306668A JP8143553A JP14355396A JPH09306668A JP H09306668 A JPH09306668 A JP H09306668A JP 8143553 A JP8143553 A JP 8143553A JP 14355396 A JP14355396 A JP 14355396A JP H09306668 A JPH09306668 A JP H09306668A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- dot
- conductor pattern
- conductor patterns
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims abstract description 49
- 239000004020 conductor Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 6
- 239000011159 matrix material Substances 0.000 abstract description 3
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- 229910052744 lithium Inorganic materials 0.000 abstract description 2
- 229910052749 magnesium Inorganic materials 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum chelate complex Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 125000006617 triphenylamine group Chemical group 0.000 description 2
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- ZMLPKJYZRQZLDA-UHFFFAOYSA-N 1-(2-phenylethenyl)-4-[4-(2-phenylethenyl)phenyl]benzene Chemical group C=1C=CC=CC=1C=CC(C=C1)=CC=C1C(C=C1)=CC=C1C=CC1=CC=CC=C1 ZMLPKJYZRQZLDA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、平面光源やディ
スプレイに用いられるＥＬ素子とその製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an EL element used for a flat light source or a display and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来、例えば有機ＥＬ（エレクトロルミ
ネッセンス）素子は、図４に示すように、ガラス基板１
にストライプ状の透光性のＩＴＯ膜の陽極２を形成し、
図面において、その下にトリフェニルアミン誘導体（Ｔ
ＰＤ）等のホール輸送材料３を設け、その下方に、アル
ミキレート錯体（Ａｌｑ3）等の電子輸送発光材料４を
設け、さらに陽極２と直交するように、Ａｌ等でストラ
イプ状に陰極５を形成したものがある。この有機ＥＬ素
子は、ストライプ状の陽極２と陰極５の交点で、所定の
電圧が印加された際に発光を生じるものである。そし
て、この有機ＥＬ素子の製造に際しては、ストライプ状
の陽極２をガラス基板１上でエッチングにより形成し、
陰極５はマスク蒸着により形成するものである。2. Description of the Related Art Conventionally, for example, an organic EL (electroluminescence) element has a glass substrate 1 as shown in FIG.
Forming the stripe-shaped transparent ITO film anode 2 on the
In the drawing, a triphenylamine derivative (T
(PD) or the like, and a hole transporting material 3 such as PD, and an electron transporting light emitting material 4 such as an aluminum chelate complex (Alq 3 ) below the cathode. There is a formed one. This organic EL element emits light when a predetermined voltage is applied at the intersection of the stripe-shaped anode 2 and cathode 5. When manufacturing this organic EL element, the stripe-shaped anode 2 is formed on the glass substrate 1 by etching,
The cathode 5 is formed by mask vapor deposition.
【０００３】[0003]
【発明が解決しようとする課題】上記従来の技術の場
合、ストライプ状の陽極２をエッチングにより形成する
ものであり、エッチングやレジスト形成の際に、ＩＴＯ
膜の表面が汚染される恐れがあった。さらに、ストライ
プ状の互いに直交するＩＴＯ膜の交点に電界をかけるた
め、ディスプレイとしての表示素子の１ドットあたりの
通電時間が短く発光時間も短いものであった。しかもド
ット数を多くすればするほど１ドットあたりの通電時間
が短くなり、所望の明るさを得るためには大電流を流さ
なければならないものであった。In the case of the above-mentioned conventional technique, the stripe-shaped anode 2 is formed by etching, and ITO is used at the time of etching or resist formation.
The surface of the film could be contaminated. Furthermore, since an electric field is applied to the intersections of the stripe-shaped mutually orthogonal ITO films, the energization time per dot of the display element as a display is short and the light emission time is short. Moreover, as the number of dots increases, the energizing time per dot becomes shorter, and a large current must be applied to obtain a desired brightness.
【０００４】また、ＩＴＯ膜は薄膜であり比較的抵抗値
が高く、ストライプ状のＩＴＯ膜の電極２，５の位置に
より電極間の電圧が異なり、発光輝度が異なってしまう
という問題があった。特に、有機ＥＬ素子は電流が大き
く、電極パターンの抵抗も画面が大きくなるとより影響
が大きく、画面の個所により明るさにむらが生じるとい
う問題があり、寿命も短いものであった。Further, since the ITO film is a thin film and has a relatively high resistance value, there is a problem that the voltage between the electrodes is different depending on the positions of the electrodes 2 and 5 of the striped ITO film, and the emission brightness is different. In particular, the organic EL element has a problem that the current is large and the resistance of the electrode pattern is more affected when the screen is large, and uneven brightness occurs depending on the location of the screen, and the life is short.
【０００５】この発明は、上記従来の技術に鑑みてなさ
れたもので、簡単な構成で、不純物の混入がなく、画面
の位置に関係なく均一な発光を可能にし、寿命も長いＥ
Ｌ素子とその製造方法を提供することを目的とする。The present invention has been made in view of the above-mentioned prior art. It has a simple structure, does not contain impurities, enables uniform light emission regardless of the position of the screen, and has a long life.
An object is to provide an L element and a method for manufacturing the same.
【０００６】[0006]
【課題を解決するための手段】この発明は、ガラス等の
透明基板上にＩＴＯ等の透明な電極が一面に形成され、
その透明電極にメッシュ状またはストライプ状に、金、
銅、アルミニウム、ニッケル等の導体パターンが形成さ
れ、この導体パターン間にＥＬ材料が積層され、さら上
記ＥＬ材料に所定のドット状の電極が独立に形成された
ＥＬ素子である。上記ＥＬ材料は、有機ＥＬ材料であ
る。さらに、上記導体パターンは、上記透明な電極と接
している部分以外は絶縁体で覆われ、その絶縁体で覆わ
れた導体パターン間にＥＬ材料が設けられているもので
ある。また、上記ＥＬ材料は、絶縁性の保護膜ににより
覆われているものである。According to the present invention, a transparent electrode such as ITO is formed on one surface of a transparent substrate such as glass.
Gold, in a mesh or stripe pattern on the transparent electrode,
This is an EL element in which a conductor pattern of copper, aluminum, nickel or the like is formed, an EL material is laminated between the conductor patterns, and predetermined dot-shaped electrodes are independently formed on the EL material. The EL material is an organic EL material. Further, the conductor pattern is covered with an insulator except for the portion in contact with the transparent electrode, and the EL material is provided between the conductor patterns covered with the insulator. Moreover, the EL material is covered with an insulating protective film.
【０００７】またこの発明は、ガラス基板上にＩＴＯ等
の透明な電極を真空蒸着やスパッタリングその他の真空
中での薄膜形成技術により一面に形成し、その透明電極
にメッシュ状またはストライプ状の導体パターンを上記
薄膜形成技術により形成し、この導体パターン間にＥＬ
材料を上記薄膜形成技術により形成し、さら上記ＥＬ材
料に所定のドット状の独立した電極を、上記薄膜形成技
術により形成するＥＬ素子の製造方法である。さらに、
上記透明な電極に上記導体パターンを形成後、この導体
パターンの表面を絶縁体で覆うものである。また上記導
体パターンと有機ＥＬ材料は、薄膜形成技術以外に、塗
布または印刷により形成しても良いものである。Further, according to the present invention, a transparent electrode such as ITO is formed on one surface of a glass substrate by a thin film forming technique in vacuum such as vacuum deposition or sputtering, and a mesh-shaped or striped conductor pattern is formed on the transparent electrode. Is formed by the thin film forming technique described above, and EL is provided between the conductor patterns.
This is a method for manufacturing an EL element, in which a material is formed by the thin film forming technique, and further, predetermined dot-shaped independent electrodes are formed on the EL material by the thin film forming technique. further,
After forming the conductor pattern on the transparent electrode, the surface of the conductor pattern is covered with an insulator. The conductor pattern and the organic EL material may be formed by coating or printing, other than the thin film forming technique.
【０００８】この発明のＥＬ素子とその製造方法は、平
面状のＥＬ素子の透明な電極を一面に形成しさらにその
表面の導体パターンにより、この透明電極の抵抗値を小
さくし、上記導体パターン間に他方の電極を形成して、
発光むらがなく発光効率も良くしたものである。According to the EL element and the manufacturing method thereof of the present invention, the transparent electrode of the planar EL element is formed on one surface, and the resistance value of the transparent electrode is reduced by the conductor pattern on the surface, and Form the other electrode on
There is no unevenness of light emission and the luminous efficiency is improved.
【０００９】[0009]
【発明の実施の形態】以下、この発明の実施形態につい
て図面を基にして説明する。図１、図２はこの発明のＥ
Ｌ素子の第一実施形態を示すもので、この実施形態のＥ
Ｌ素子は、有機薄膜ＥＬ素子であり、図示するように、
ガラス、透明樹脂、石英等の透明基板１０の表面に、Ｉ
ＴＯ等の透明な導電層である電極１２が一面に形成され
ている。電極１２の表面には、金、銅、アルミニウム、
ニッケル、またはこれらの合金等の導電性の良い材料に
よるメッシュ状またはストライプ状の導体パターン１５
が形成されている。この導体パターン１５間には、ＥＬ
材料１４による発光層が形成されている。そして、その
外側にＡｌ、Ｍｇ、Ｌｉ、Ａｇ、Ｉｎ等で、ドット電極
１６が形成されている。ドット電極１６は、所定の大き
さ、例えば数ミリから数百μｍ程度の大きさのドットの
マトリクス状に形成されている。また、各ドットには金
や銅のドットを積層しても良い。そして、各ドット電極
１６は各々図示しないＩＣ等の駆動回路に接続されてい
る。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 show E of the present invention.
The first embodiment of the L element is shown, and E of this embodiment is shown.
The L element is an organic thin film EL element.
On the surface of the transparent substrate 10 made of glass, transparent resin, quartz or the like, I
An electrode 12 which is a transparent conductive layer such as TO is formed on one surface. On the surface of the electrode 12, gold, copper, aluminum,
Mesh-shaped or stripe-shaped conductor pattern 15 made of a material having good conductivity such as nickel or an alloy thereof.
Are formed. EL between the conductor patterns 15
A light emitting layer made of the material 14 is formed. The dot electrode 16 is formed on the outer side of Al, Mg, Li, Ag, In, or the like. The dot electrode 16 is formed in a matrix of dots having a predetermined size, for example, a size of several millimeters to several hundreds of micrometers. Further, gold or copper dots may be laminated on each dot. Each dot electrode 16 is connected to a drive circuit such as an IC (not shown).
【００１０】発光層１４は、母体材料のうち電子輸送材
料としては、アルミキレート錯体（Ａｌｑ3）ジスチリ
ルビフェニル誘導体（ＤＰＶＢｉ）、オキサジアゾール
誘導体、ビスチリルアントラセン誘導体、ベンゾオキサ
ゾールチオフェン誘導体等を用いる。ホール輸送材料と
しては、トリフェニルアミン誘導体（ＴＰＤ）、ヒドラ
ゾン誘導体、アリールアミン誘導体等がある。また、上
記電子輸送材料とホール輸送材料との比は、１０：９０
乃至９０：１０の範囲で適宜変更可能である。As the electron transporting material of the base material of the light emitting layer 14, an aluminum chelate complex (Alq 3 ) distyrylbiphenyl derivative (DPVBi), an oxadiazole derivative, a bistyrylanthracene derivative, a benzoxazolethiophene derivative or the like is used. . Examples of the hole transport material include triphenylamine derivative (TPD), hydrazone derivative, arylamine derivative and the like. The ratio of the electron transport material to the hole transport material is 10:90.
It is possible to change appropriately within the range from 90:10 to 90:10.
【００１１】この実施形態の有機薄膜ＥＬ素子の製造方
法は、光の３原色の色の蛍光を発する有機ＥＬ材料と上
記母体材料を混合して白色発光材料を形成する。また、
所定の色の発光を行なわせる場合は、所定の色の蛍光を
発する材料を混合した上記母体材料を１または複数層に
わたって形成する。そして、先ず基板１０上に一面にＩ
ＴＯ等による電極１２を蒸着やフラッシュ蒸着、スパッ
タリングその他の真空中の薄膜形成技術により形成す
る。次に、導体パターン１５を、メッシュ状またはスト
ライプ状のマスクを用いて、上記真空薄膜形成技術によ
り形成する。また、ストライプ状のマスクを用いて、互
いに直交した位置に配置して蒸着を２回行なうことによ
り、メッシュ状の導体パターン１５を形成しても良い。In the method of manufacturing an organic thin film EL element of this embodiment, a white light emitting material is formed by mixing an organic EL material that emits fluorescence of three primary colors of light with the above-mentioned base material. Also,
When light emission of a predetermined color is performed, the above-mentioned base material mixed with a material that emits fluorescence of a predetermined color is formed over one or more layers. Then, first, the I
The electrode 12 made of TO or the like is formed by vapor deposition, flash vapor deposition, sputtering or other thin film forming technique in vacuum. Next, the conductor pattern 15 is formed by the above vacuum thin film forming technique using a mask having a mesh shape or a stripe shape. Alternatively, the mesh-shaped conductor pattern 15 may be formed by using stripe-shaped masks and arranging them at mutually orthogonal positions and performing vapor deposition twice.
【００１２】この後、さらに、ＥＬ材料１４を蒸着やフ
ラッシュ蒸着、スパッタリングその他の真空中の薄膜形
成技術により、導体パターン１５間に形成する。そし
て、導体パターン１５間のＥＬ材料１４の表面に、電極
１６を蒸着等の真空薄膜形成技術で設ける。このとき、
電極１６は、ドットのマトリクスとしてドット状のマス
クを用いて形成される。After that, the EL material 14 is further formed between the conductor patterns 15 by vapor deposition, flash vapor deposition, sputtering or other thin film forming technique in vacuum. Then, the electrode 16 is provided on the surface of the EL material 14 between the conductor patterns 15 by a vacuum thin film forming technique such as vapor deposition. At this time,
The electrodes 16 are formed using a dot-shaped mask as a dot matrix.
【００１３】ここで蒸着条件は、真空度が６×１０-6Ｔ
ｏｒｒで、例えば、ＥＬ材料１４の場合５０Å／ｓｅｃ
の蒸着速度で成膜した。蒸着源は、２０秒以内に４００
℃まで上昇させた。さらに、フラッシュ蒸着法は、予め
所定の比率で混合した有機ＥＬ材料１４を、３００〜６
００℃好ましくは、４００〜５００℃に加熱した蒸着源
に落下させ、有機ＥＬ材料１４を一気に蒸発させるもの
である。また、その有機ＥＬ材料１４を容器中に収容
し、急速にその容器を加熱し、一気に蒸着させるもので
も良い。Here, the vapor deposition condition is that the degree of vacuum is 6 × 10 -6 T.
orr, for example, 50 ° / sec for EL material 14
The film was formed at the vapor deposition rate of. The deposition source is 400
Temperature. Further, in the flash evaporation method, the organic EL material 14 mixed in a predetermined ratio in advance is used for 300 to 6 times.
The organic EL material 14 is dropped to a deposition source heated to 00 ° C., preferably 400 to 500 ° C., and evaporates at a stretch. Alternatively, the organic EL material 14 may be housed in a container, and the container may be rapidly heated to vapor-deposit at a stretch.
【００１４】この実施形態のＥＬ素子は、電極１２の形
成時にエッチングを用いないために、エッチング処理に
よる化学的汚染や不純物の付着が生じないものである。
しかも電極１２は一面に形成され、その表面に導体パタ
ーン１５が形成され、電極１２部分の電気抵抗が小さ
く、ＥＬ材料１４にかかる電圧にむらが生じることがな
く、全面均一な発光状態を得ることができるものであ
る。さらに、発熱も少なくすることができ、ＥＬ素子の
寿命も延ばすことができる。Since the EL element of this embodiment does not use etching when forming the electrode 12, chemical contamination and adhesion of impurities due to etching treatment do not occur.
Moreover, the electrode 12 is formed on one surface, the conductor pattern 15 is formed on the surface, the electric resistance of the electrode 12 is small, the voltage applied to the EL material 14 is not uneven, and a uniform light emission state is obtained over the entire surface. Is something that can be done. Further, heat generation can be reduced, and the life of the EL element can be extended.
【００１５】次に、この発明のＥＬ素子とその製造方法
の第二実施形態について、図３に基づいて説明する。こ
こで上記実施形態と同様の部材は同一の符号を付して説
明を省略する。この実施形態のＥＬ素子は、導体パター
ン１５の電極１２と接している部分以外を、ＳｉＯ2等
の絶縁体１８により被覆したものである。これは、導体
パターン１５とドット電極１６間での電流をなくし、そ
の間での発光を阻止して表面に現れない無駄な発光を抑
え、発光効率を高めるものである。この絶縁体１８の形
成はＳｉＯ2を、蒸着等の真空薄膜形成技術により形成
するものである。Next, a second embodiment of the EL element and the manufacturing method thereof according to the present invention will be described with reference to FIG. Here, the same members as those in the above-described embodiment are designated by the same reference numerals, and the description thereof will be omitted. In the EL element of this embodiment, the conductor pattern 15 is covered with an insulator 18 such as SiO 2 except the portion in contact with the electrode 12. This eliminates the electric current between the conductor pattern 15 and the dot electrode 16, prevents the light emission during that time, suppresses unnecessary light emission that does not appear on the surface, and improves the light emission efficiency. The insulator 18 is formed by forming SiO 2 by a vacuum thin film forming technique such as vapor deposition.
【００１６】次に、この発明のＥＬ素子とその製造方法
の第三実施形態について、図４に基づいて説明する。こ
こで上記実施形態と同様の部材は同一の符号を付して説
明を省略する。この実施形態のＥＬ素子は、ドット電極
１６間のＥＬ材料１４及び導体パターン１５を絶縁体の
保護膜２０で被覆したものである。保護膜２０は、例え
ば、ＳｉＯ2を蒸着等の真空薄膜形成技術により形成す
るものである。このとき、ドット電極１６の形成部分
は、マスクにより保護膜２０が付着しないようにする
か、全面に蒸着した後に、ドット電極１６部分をエッチ
ングしてドット電極１６を露出させる。これにより、Ｅ
Ｌ材料１４に不純物が付着しにくく、ＥＬ素子の寿命を
延ばすことができるものである。Next, a third embodiment of the EL element and the manufacturing method thereof according to the present invention will be described with reference to FIG. Here, the same members as those in the above-described embodiment are designated by the same reference numerals, and the description thereof will be omitted. In the EL element of this embodiment, the EL material 14 between the dot electrodes 16 and the conductor pattern 15 are covered with an insulating protective film 20. The protective film 20 is formed of, for example, SiO 2 by a vacuum thin film forming technique such as vapor deposition. At this time, in the portion where the dot electrode 16 is formed, the protective film 20 is prevented from adhering by a mask, or after the entire surface is vapor-deposited, the dot electrode 16 portion is etched to expose the dot electrode 16. This gives E
Impurities do not easily adhere to the L material 14, and the life of the EL element can be extended.
【００１７】次に、この発明のＥＬ素子とその製造方法
の第四実施形態について、図５に基づいて説明する。こ
こで上記実施形態と同様の部材は同一の符号を付して説
明を省略する。この実施形態のＥＬ素子は、上記第二実
施形態と第三実施形態とを合わせたもので、導体パター
ン１５の電極１２と接している部分以外を、ＳｉＯ2等
の絶縁体１８により被覆し、ドット電極１６間のＥＬ材
料１４及び導体パターン１５を絶縁体の保護膜２０で被
覆したものである。これにより、発光効率を高め、素子
の寿命を延ばすことができるものである。この絶縁体１
８と保護膜２０の形成は、上記と同様に、ＳｉＯ2を蒸
着等の真空薄膜形成技術により形成するものである。Next, a fourth embodiment of the EL device of the present invention and a method of manufacturing the same will be described with reference to FIG. Here, the same members as those in the above-described embodiment are designated by the same reference numerals, and the description thereof will be omitted. The EL element of this embodiment is a combination of the above-described second embodiment and third embodiment, in which a portion of the conductor pattern 15 other than the portion in contact with the electrode 12 is covered with an insulator 18 such as SiO 2 . The EL material 14 and the conductor pattern 15 between the dot electrodes 16 are covered with an insulating protective film 20. As a result, the luminous efficiency can be improved and the life of the device can be extended. This insulator 1
8 and the protective film 20 are formed by forming SiO 2 by a vacuum thin film forming technique such as vapor deposition as in the above.
【００１８】なお、この発明のＥＬ素子とその製造方法
は、上記実施形態に限定されるものではなく、導体パタ
ーンは、Ｎｉ−Ｃｒ合金や、Ｎｉ−Ａｕの２層構造でも
良く、発光ドット間の境界を黒くして視感性を向上させ
るようにしても良い。また、不純物の影響がなければ、
カーボン等の導体を印刷または塗布により、メッシュ状
またはストライプ状に形成しても良い。さらに、ＥＬ材
料も、有機ＥＬ材料を印刷又は塗布により形成しても良
いものである。その他、ＥＬ材料は適宜選択可能なもの
であり、発光色も任意に選択可能である。The EL device of the present invention and the method for manufacturing the same are not limited to the above embodiment, and the conductor pattern may have a two-layer structure of Ni-Cr alloy or Ni-Au. It is also possible to blacken the border of the above to improve the visual sensitivity. Also, if there is no influence of impurities,
A conductor such as carbon may be formed into a mesh shape or a stripe shape by printing or coating. Further, the EL material may also be formed by printing or applying an organic EL material. In addition, the EL material can be appropriately selected, and the emission color can be arbitrarily selected.
【００１９】[0019]
【発明の効果】この発明のＥＬ素子は、一方の電極を一
面に形成し、さらに表面に導体パターンを形成している
ので、電極部分の抵抗がきわめて小さく、電極の位置に
よる発光輝度のむらがないものである。しかも、発光効
率が良いことから、輝度が高く発熱も少なく、素子の寿
命も長いものである。また、導体パターンを絶縁体で覆
うことにより、より発光効率が良いものとなる。さら
に、ＥＬ材料を絶縁体で被覆することにより、外部から
の汚染の影響をなくすことができ、ＥＬ素子の寿命をよ
り延ばすことができる。In the EL device of the present invention, one electrode is formed on one surface and a conductor pattern is further formed on the surface, so that the resistance of the electrode portion is extremely small and there is no unevenness in light emission luminance depending on the position of the electrode. It is a thing. In addition, since the luminous efficiency is good, the luminance is high, the heat generation is small, and the life of the element is long. Further, by covering the conductor pattern with an insulator, the light emission efficiency is further improved. Further, by covering the EL material with an insulator, the influence of external contamination can be eliminated, and the life of the EL element can be further extended.
【００２０】また、製造工程を真空薄膜形成工程のみに
よりドット電極まで形成することができ、不純物による
汚染を阻止することができ、素子寿命を延ばすことがで
きる。Further, the dot electrode can be formed only by the vacuum thin film forming step in the manufacturing process, contamination by impurities can be prevented, and the device life can be extended.
【図１】この発明の第一実施形態のＥＬ素子の断面図で
ある。FIG. 1 is a sectional view of an EL device according to a first embodiment of the present invention.
【図２】この発明の第一実施形態のＥＬ素子の背面図で
ある。FIG. 2 is a rear view of the EL element according to the first embodiment of the present invention.
【図３】この発明の第二実施形態のＥＬ素子の断面図で
ある。FIG. 3 is a sectional view of an EL device according to a second embodiment of the present invention.
【図４】この発明の第三実施形態のＥＬ素子の断面図で
ある。FIG. 4 is a sectional view of an EL device of a third embodiment of the present invention.
【図５】この発明の第四実施形態のＥＬ素子の断面図で
ある。FIG. 5 is a sectional view of an EL device according to a fourth embodiment of the present invention.
【図６】従来の技術のＥＬ素子の断面図である。FIG. 6 is a sectional view of a conventional EL device.
１，１０ 基板 ２，５，１２ 電極 １４ ＥＬ材料 １５ 導体パターン １６ ドット電極 １８ 絶縁体 ２０ 保護膜 1, 10 Substrate 2, 5, 12 Electrode 14 EL Material 15 Conductor Pattern 16 Dot Electrode 18 Insulator 20 Protective Film
Claims (6)
れ、その透明な電極にメッシュ状またはストライプ状に
導体パターンが形成され、この導体パターン間にＥＬ材
料が積層され、上記ＥＬ材料に所定のドット状の電極が
独立に形成されているＥＬ素子。1. A transparent electrode is formed on one surface on a transparent substrate, a conductor pattern is formed on the transparent electrode in a mesh shape or a stripe shape, and an EL material is laminated between the conductor patterns. An EL element in which predetermined dot-shaped electrodes are independently formed.
求項１記載のＥＬ素子。2. The EL device according to claim 1, wherein said EL material is an organic EL material.
接している部分以外が絶縁体で覆われ、その絶縁体で覆
われた導体パターン間にＥＬ材料が設けられているもの
である請求項１又は２記載のＥＬ素子。3. The conductor pattern is covered with an insulator except a portion in contact with the transparent electrode, and an EL material is provided between the conductor patterns covered with the insulator. The EL device according to 1 or 2.
覆われている請求項１，２又は３記載のＥＬ素子。4. The EL element according to claim 1, wherein the EL material is covered with an insulating protective film.
膜形成技術により一面に形成し、その透明電極にメッシ
ュ状またはストライプ状の導体パターンを上記薄膜形成
技術により形成し、この導体パターン間にＥＬ材料を上
記薄膜形成技術により形成し、さら上記ＥＬ材料に所定
のドット状の独立した電極を、上記薄膜形成技術により
形成するＥＬ素子の製造方法。5. A transparent electrode is formed on one surface of a transparent substrate by a thin film forming technique in vacuum, and a mesh-shaped or striped conductor pattern is formed on the transparent electrode by the thin film forming technique. A method for manufacturing an EL element, in which an EL material is formed by the thin film forming technique, and predetermined dots of independent electrodes are formed on the EL material by the thin film forming technique.
成後、この導体パターンの表面を絶縁体で覆い、その後
上記ＥＬ材料を積層する請求項５記載のＥＬ素子の製造
方法。6. The method for manufacturing an EL element according to claim 5, wherein after forming the conductor pattern on the transparent electrode, the surface of the conductor pattern is covered with an insulator, and then the EL material is laminated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8143553A JPH09306668A (en) | 1996-05-13 | 1996-05-13 | El element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8143553A JPH09306668A (en) | 1996-05-13 | 1996-05-13 | El element and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09306668A true JPH09306668A (en) | 1997-11-28 |
Family
ID=15341426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8143553A Pending JPH09306668A (en) | 1996-05-13 | 1996-05-13 | El element and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09306668A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001236027A (en) * | 1999-12-15 | 2001-08-31 | Semiconductor Energy Lab Co Ltd | El display device |
| JP2001345185A (en) * | 2000-03-27 | 2001-12-14 | Semiconductor Energy Lab Co Ltd | Light emitting device and method of manufacture |
| CN1081432C (en) * | 1999-04-02 | 2002-03-20 | 海信集团公司 | Electroluminesence display and its manufacture |
| WO2003022012A1 (en) * | 2001-09-03 | 2003-03-13 | Matsushita Electric Industrial Co., Ltd. | Light emitting element, and display unit and illuminating device using the light emitting element |
| WO2005062679A1 (en) * | 2003-12-22 | 2005-07-07 | Ga Korea Tech Co., Ltd. | Flexible front electrode films and electro-luminescence devices using the same |
| WO2005106573A1 (en) * | 2004-04-30 | 2005-11-10 | Fuji Photo Film Co., Ltd. | Liquid crystal display and process for fabricating the same |
| JP2006165306A (en) * | 2004-12-08 | 2006-06-22 | Hitachi Aic Inc | Electromagnetic wave shield film |
| US8754577B2 (en) | 1999-12-15 | 2014-06-17 | Semiconductor Energy Laboratory Co., Ltd. | EL display device |
| WO2014185224A1 (en) * | 2013-05-17 | 2014-11-20 | 旭硝子株式会社 | Organic led element and method for producing organic led element |
| JP2015233011A (en) * | 2004-06-03 | 2015-12-24 | 株式会社半導体エネルギー研究所 | Lighting device |
| US9653706B2 (en) | 2013-11-14 | 2017-05-16 | Kabushiki Kaisha Toshiba | Organic electroluminescent element, lighting device, lighting system, and method for manufacturing organic electroluminescent element |
-
1996
- 1996-05-13 JP JP8143553A patent/JPH09306668A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1081432C (en) * | 1999-04-02 | 2002-03-20 | 海信集团公司 | Electroluminesence display and its manufacture |
| JP2001236027A (en) * | 1999-12-15 | 2001-08-31 | Semiconductor Energy Lab Co Ltd | El display device |
| US8754577B2 (en) | 1999-12-15 | 2014-06-17 | Semiconductor Energy Laboratory Co., Ltd. | EL display device |
| JP2001345185A (en) * | 2000-03-27 | 2001-12-14 | Semiconductor Energy Lab Co Ltd | Light emitting device and method of manufacture |
| JP4693262B2 (en) * | 2000-03-27 | 2011-06-01 | 株式会社半導体エネルギー研究所 | Passive matrix light emitting device |
| WO2003022012A1 (en) * | 2001-09-03 | 2003-03-13 | Matsushita Electric Industrial Co., Ltd. | Light emitting element, and display unit and illuminating device using the light emitting element |
| WO2005062679A1 (en) * | 2003-12-22 | 2005-07-07 | Ga Korea Tech Co., Ltd. | Flexible front electrode films and electro-luminescence devices using the same |
| WO2005106573A1 (en) * | 2004-04-30 | 2005-11-10 | Fuji Photo Film Co., Ltd. | Liquid crystal display and process for fabricating the same |
| JP2015233011A (en) * | 2004-06-03 | 2015-12-24 | 株式会社半導体エネルギー研究所 | Lighting device |
| JP2006165306A (en) * | 2004-12-08 | 2006-06-22 | Hitachi Aic Inc | Electromagnetic wave shield film |
| WO2014185224A1 (en) * | 2013-05-17 | 2014-11-20 | 旭硝子株式会社 | Organic led element and method for producing organic led element |
| JPWO2014185224A1 (en) * | 2013-05-17 | 2017-02-23 | 旭硝子株式会社 | Organic LED element, organic LED element manufacturing method |
| US9653706B2 (en) | 2013-11-14 | 2017-05-16 | Kabushiki Kaisha Toshiba | Organic electroluminescent element, lighting device, lighting system, and method for manufacturing organic electroluminescent element |
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