JP2019091642A - Display - Google Patents

Abstract

To solve the problem in which: a sealing layer covering an organic EL element needs to increase adhesion with a ground surface so as not to be peeled off.SOLUTION: A display comprises: a display unit that has a plurality of pixels arranged thereon; a sealing layer that covers the display unit; and a common connection part outside the display unit. The plurality of pixels each include a first electrode, a second electrode that is arranged on the first electrode, covers the entirety of the display unit, and overlaps part of the common connection part, and an organic layer between the first electrode and second electrode. The common connection part includes a metal layer arranged outside the second electrode; the sealing layer includes at least one inorganic insulating layer; the ends of the inorganic insulating layer are arranged outside the second electrode. The inorganic insulating layer has a first area in contact with the second electrode, and a second area in contact with the metal layer outside the first area.SELECTED DRAWING: Figure 2

Description

  One embodiment of the present invention relates to a display device having a sealing layer covering a region in which a plurality of pixels are arranged.

  An organic electroluminescent element (hereinafter, also referred to as "organic EL element" or simply "light emitting element") has an organic layer including an organic electroluminescent material laminated between a pair of electrodes which is distinguished from an anode and a cathode. It has a structure. In a display device in which a pixel is formed of an organic EL element, a sealing layer is provided which covers a region where a plurality of pixels are provided (hereinafter, also referred to as a “display portion”). Organic EL elements are known to deteriorate under the influence of moisture. Therefore, the sealing layer is required to have high water vapor barrier properties. As a structure of a sealing layer for sealing an organic EL element, for example, a structure in which an organic sealing layer is laminated between a first inorganic sealing layer and a second non-sealing layer is disclosed ( Patent Document 1).

JP, 2017-157406, A

  The sealing layer covering the organic EL element needs to have high adhesion (adhesion strength, adhesion strength) with the base surface so as not to peel off.

  A display device according to an embodiment of the present invention includes a display unit in which a plurality of pixels are arranged, a sealing layer covering the display unit, and a common connection unit outside the display unit. The plurality of pixels includes a first electrode, a second electrode which is disposed on the first electrode and covers the entire display portion and overlaps a part of the common connection portion, and an organic layer between the first electrode and the second electrode Have. The common connection includes a metal layer disposed outside the second electrode, the sealing layer includes at least one inorganic insulating layer, and the end of the inorganic insulating layer is disposed outside the second electrode. The inorganic insulating layer has a first region in contact with the second electrode, and a second region in contact with the metal layer outside the first region.

  A display device according to an embodiment of the present invention includes a transistor, an interlayer insulating layer over the transistor, a common wiring over the interlayer insulating layer, a planarization layer disposed over the interlayer insulating layer and embedding the transistor, and planarization A light emitting element on a layer, a partition layer disposed on an interlayer insulating layer and surrounding the light emitting element, and a sealing layer covering the light emitting element and the partition layer are included. The light emitting element has a first electrode on the planarization layer, a second electrode on the first electrode and the partition layer, and an organic layer between the first electrode and the second electrode. The common wiring is exposed from the planarization layer and the partition layer, and the second electrode has a region extending from above the partition layer and overlapping the common wiring. The sealing layer includes at least one inorganic insulating layer, and the end of the inorganic insulating layer is disposed outside the second electrode. The inorganic insulating layer has a first region in contact with the second electrode, and a second region overlapping the common wiring outside the first region. The second region includes a metal layer between the inorganic insulating layer and the common wiring.

  A display device according to an embodiment of the present invention includes a first insulating layer, a semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, and a region overlapping the semiconductor layer over the second insulating layer. A gate electrode, a third insulating layer on the second insulating layer and the gate electrode, a first wiring and a common wiring on the third insulating layer, and a planarization layer on the third insulating layer, the first wiring and the common wiring A first electrode on the planarization layer, a partition layer having an opening in a region overlapping the first electrode, a second electrode on the first electrode and the partition layer, a first electrode, and a second electrode And an encapsulation layer on the second electrode. The planarization layer has an opening groove for exposing the common wiring, and the second electrode has a region extending from above the partition layer and overlapping the common wiring. The sealing layer includes at least one inorganic insulating layer, and the end of the inorganic insulating layer is disposed outside the second electrode. The inorganic insulating layer has a first region in contact with the second electrode, and a second region overlapping the common wiring outside the first region. The second region includes a metal layer between the inorganic insulating layer and the common wiring.

It is a figure showing composition of a display concerning one embodiment of the present invention. It is a sectional view showing the composition of the display concerning one embodiment of the present invention. It is sectional drawing explaining the structure of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the structure of the display apparatus which concerns on one Embodiment of this invention. It is a figure explaining the structure of the pixel of the display concerning one embodiment of the present invention. It is a figure explaining the structure of the common connection part of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the manufacturing method of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the manufacturing method of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the manufacturing method of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the manufacturing method of the display apparatus which concerns on one Embodiment of this invention. It is a sectional view explaining a manufacturing method of a display concerning one embodiment of the present invention, and a figure explaining a state of a common connection part. It is sectional drawing explaining the manufacturing method of the display apparatus which concerns on one Embodiment of this invention. It is sectional drawing explaining the manufacturing method of the display apparatus which concerns on one Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings and the like. However, the present invention can be implemented in many different modes, and is not construed as being limited to the description of the embodiments exemplified below. Although the drawings may be schematically represented with respect to the width, thickness, shape, etc. of each portion in comparison with the actual embodiment in order to make the description clearer, this is merely an example, and the interpretation of the present invention is limited. It is not a thing. Further, in the specification and the drawings, the same elements as those described above with reference to the existing figures are denoted by the same reference numerals (or reference numerals with a, b, etc. added after numbers) for detailed explanation. It may be omitted as appropriate. Furthermore, the letters appended with “first” and “second” for each element are convenient indicators used to distinguish each element and have no further meaning unless specifically stated otherwise .

  In this specification, when one member or area is "above (or below)" another member or area, it is immediately above (or just below) the other member or area unless there is a particular limitation. Not only in some cases, but also above (or below) other members or regions, that is, including other components interposed above (or below) other members or regions . In the following description, unless otherwise noted, in the cross-sectional view, the side on which the pixel region and the touch sensor are arranged with respect to one main surface of the substrate is described as “upper”.

  In the present specification, the terms “on” and “upward” of a member mean directions away from the base member unless otherwise specified. For example, when the first layer and the second layer are stacked in this order on the first surface of the base member, the second layer is disposed (provided) on the first layer. It shall be said.

  The configuration of a display device 100 according to an embodiment of the present invention is shown in FIG. FIG. 1 shows a planar arrangement of each component of the display device 100. FIG. The display device 100 includes a base member 102. The base member 102 has a first surface and a second surface opposite to the first surface. The display unit 104 is provided on one surface (for example, the first surface) of the base member 102. In the display unit 104, a plurality of pixels 106 are arranged. In the display unit 104, a plurality of scanning signal lines 108 extending from the first driving circuit 112a and a plurality of video signal lines 110 extending from the second driving circuit 112b are provided corresponding to the arrangement of the plurality of pixels 106. .

  The first drive circuit 112 a, the second drive circuit 112 b, and the terminal portion 114 are disposed in an area outside the display unit 104. The first drive circuit 112a is disposed along at least one side of the display portion 104, and the second drive circuit 112b is disposed along one side intersecting the one side. The first drive circuit 112 a outputs a scan signal to the scan signal line 108, and the second drive circuit 112 b outputs a video signal to the video signal line 110. Further, in the region outside the display unit 104, a common connection unit 118 (common contact) for giving a common potential to the plurality of pixels 106 arranged in the display unit 104 is disposed. FIG. 1 shows an aspect in which the common connection portion 118 is disposed outside the first drive circuit 112a. The common connection portion 118 is provided so as to surround three sides of the display portion 104. By arranging the common connection portion 118 so as to surround the display portion 104, equalization of the potential applied to each of the plurality of pixels 106 is achieved.

  The base member 102 is formed of a resin material, a metal material, and a glass material. The base member 102 has a film-like, plate-like form. From the appearance shape, the base member 102 can also be called a film, a sheet, or a substrate. In a preferred embodiment, a film-like member is used as the base member 102. Specifically, a polyimide film is used as the base member 102. The polyimide film as the base member 102 has a thickness of about 5 μm to 50 μm, for example, about 10 μm. The base member 102 having such a thickness is flexible. Although details will be described later, in the display portion 104 and the driver circuit 112, various elements and circuits are manufactured using thin films such as metals, semiconductors, and insulators. Since various elements and circuits made of thin films can be bent together with the base member 102, the flexible display device 100 can be obtained. Moreover, as another member which comprises the base member 102, a glass substrate about 100 micrometers-200 micrometers in thickness can also be used. In this case, in order to improve the brittleness, it is preferable that the organic resin film be attached.

  When the base member 102 has flexibility, the area between the display portion 104 and the second drive circuit 112 b can be used as the bending area 120. The area of the peripheral portion (this area is also referred to as a “frame area”) is apparently reduced by bending the base member 102 to the back surface (surface opposite to the display portion 104) in the bending region 120. Can. That is, narrowing of the display device 100 can be achieved.

  The pixel 106 is composed of a display element and a drive element for driving the display element. As a display element, a light emitting element in which a light emitting layer is formed of an organic electroluminescent material is used. As a driving element, a transistor (also referred to as a “thin film transistor”) in which a channel region is formed in a semiconductor film is used. Details of the light emitting element and the transistor will be described later. In the first drive circuit 112a, a circuit including a shift register or the like is formed by a transistor. On the other hand, for example, a bare chip silicon integrated circuit is used for the second drive circuit 112 b and mounted on the base member 102. In the terminal portion 114, a plurality of terminal electrodes 116 are arranged. Each of the plurality of terminal electrodes 116 is connected to a flexible printed wiring board (FPC board) not shown.

  FIG. 2 shows a simplified cross-sectional structure of the display device 100 taken along the line A1-A2 shown in FIG. The display device 100 has a structure in which the drive element layer 122, the display element layer 124, and the sealing layer 126 are stacked on the first surface of the base member 102. The display portion 104 has a structure in which a driving element layer 122 in which an element such as a thin film transistor is formed and a display element layer 124 in which a light emitting element 148 is formed.

  The driving element layer 122 includes a transistor 144. The driving element layer 122 may further include passive elements such as a capacitor and a resistor in addition to the transistor 144, and these elements form a pixel circuit. The driving element layer 122 has a structure in which an insulating layer, a semiconductor layer, and a conductive layer, which form these elements, are stacked appropriately. The display element layer 124 includes a light emitting element 148. A light emitting element 148 is provided for each pixel 106. The light emitting element 148 has a first electrode 172 provided for each pixel, a second electrode 176 facing the first electrode 172, and an organic layer 174 between the first electrode 172 and the second electrode 176. The organic layer 174 contains an organic electroluminescent material and is used as a light emitting medium. The organic layer 174 may be continuously formed across the plurality of light emitting elements 148 as shown in FIG. 2 or may be provided to be separated from each other for the individual light emitting elements 148. In this case, for example, the organic layer 174 is separately formed for each display color. The driving element layer 122 and the display element layer 124 are stacked, and the transistor 144 and the light emitting element 148 are electrically connected. The first drive circuit 112 a is formed in the drive element layer 122. In the first drive circuit 112a, a drive circuit is formed by a transistor.

  The second electrode 176 is provided across the plurality of pixels 106. The second electrode 176 is a common electrode shared by the plurality of pixels 106. The second electrode 176 spreads over the entire display portion 104 and is electrically connected to the common wiring 134 at a common connection portion 118 disposed outside the display portion 104. A portion of the common wire 134 overlaps the second electrode 176, and the other region is exposed from the second electrode 176. The common wiring 134 is provided to surround the outer periphery of the display unit 104. The upper surface portion of the common wire 134 is exposed by the first opening groove 132 a provided in the drive element layer 122. In the common connection portion 118, the common wiring 134 is provided wide, and the outer end of the common wiring 134 is disposed outside the second electrode 176, so that the second electrode 176 and the common wiring 134 can be reliably made. Connected In other words, when the pattern of the second electrode 176 is formed on the base member 102, the alignment margin is expanded by providing the common wiring 134 widely, and the second wiring 176 is formed at any position of the common connection portion 118. The electrode 176 and the common wiring 134 can be electrically connected reliably.

  The metal layer 136 is provided in a region where the common wire 134 is exposed from the second electrode 176. The metal layer 136 is made of a metal material different from that of the second electrode 176.

The display element layer 124 is covered with the sealing layer 126. The sealing layer 126 includes at least one inorganic insulating layer. FIG. 2 shows a mode in which the first inorganic insulating layer 128a, the organic insulating layer 130, and the second inorganic insulating layer 128b are stacked from the display element layer 124 side. The organic insulating layer 130 is provided to cover the entire surface of the display portion 104 and to extend to a region where the common connection portion 118 is provided. The end of the organic insulating layer 130 is provided so as not to reach the end of the drive element layer 122.
On the other hand, end portions of the first inorganic insulating layer 128 a and the second inorganic insulating layer 128 b are provided outside the end portions of the organic insulating layer 130. With such a configuration, the sealing layer 126 has a structure in which the upper surface, the lower surface, and the side surface of the organic insulating layer 130 are covered with the inorganic insulating layer 128.

  The sealing layer 126 (specifically, the first inorganic insulating layer 128 a) includes a first region 138 in contact with the second electrode 176, a second region 140 overlapping the metal layer 136 outside the second electrode, and a second region 140. It can be divided into a third area 142 outside the two areas 140. The first region 138 and the second region 140 include a structure in which the first inorganic insulating layer 128a, the organic insulating layer 130, and the second inorganic insulating layer 128b are stacked, and the third region 142 includes the first inorganic insulating layer 128a and the second inorganic insulating layer 128b. It has a structure in which the second inorganic insulating layer 128 b is stacked.

  The sealing layer 126 is provided to cover the display portion 104 in order to prevent deterioration of the light emitting element 148 due to moisture. The first inorganic insulating layer 128a and the second inorganic insulating layer 128b are formed of an inorganic insulating material such as a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film, which has a low water vapor transmission rate. The organic insulating layer 130 is formed of a resin material such as an acrylic resin, a polyimide resin, or an epoxy resin. By providing the organic insulating layer 130 on the first inorganic insulating layer 128 a and further providing the second inorganic insulating layer 128 b on the organic insulating layer 130, the sealing performance of the sealing layer 126 can be enhanced. For example, even if pinholes are included in the first inorganic insulating layer 128a, the organic insulating layer 130 embeds the pinholes and the second inorganic insulating layer 128b covers the pinholes to embed the pinholes in the first inorganic insulating layer 128a. It is possible to maintain the sealing performance. In addition, the organic insulating layer 130 is surrounded by the first inorganic insulating layer 128 a and the second inorganic insulating layer 128 b, whereby moisture is prevented from entering from the end portion of the organic insulating layer 130. The sealing layer 126 has a structure in which the organic insulating layer 130 is included in the inorganic insulating layer 128, whereby the sealing performance is enhanced.

  In the present embodiment, the sealing layer 126 shows an aspect in which the first inorganic insulating layer 128a, the organic insulating layer 130, and the second inorganic insulating layer 128b are stacked, but the present invention is not limited to this aspect. The sealing layer 126 may have a single layer of the first inorganic insulating layer 128a, or a structure in which the first inorganic insulating layer 128a and the second inorganic insulating layer 128b are stacked. Alternatively, the organic insulating layer 130 may be formed of a plurality of layers, and the inorganic insulating layer 128 may be provided between the layers.

  The sealing layer 126 desirably has high adhesion (also referred to as “adhesion”) with the base surface. If the adhesion to the lower surface of the sealing layer 126 is low, the display element layer 124 is peeled off, and the sealing performance is reduced. The sealing layer 126 includes a first region 138 in which the first inorganic insulating layer 128 a overlaps the second electrode 176 and a second region 140 in which the first inorganic insulating layer 128 a overlaps the metal layer 136. The sealing layer 126 can improve adhesion by providing the first inorganic insulating layer 128a over a plurality of regions having different base surface materials. In other words, the first region 138 and the second region 140 having surfaces formed of different materials are provided in the region where the sealing layer 126 is provided, thereby improving the adhesion to the base surface. Can be For example, when the adhesion of the first region 138 is low, the adhesion of the sealing layer 126 can be enhanced by selecting a material for forming the metal layer 136 such that the adhesion of the second region 140 is high. it can.

The term "adhesion" means that an interaction acts between the two materials at an interface to separate them by atomic bonding or mechanical action, and "adhesion" means peeling off both. When we say energy that we need. Specifically, from the state in which the first layer and the second layer are in close contact with each other at the interface energy γ ₀ , two isothermal surfaces consisting of the surface energy γ ₁ of the first layer and the surface energy γ ₂ of the second layer The energy required to reversibly separate is called adhesion. This relationship is expressed by the well-known Dupre equation: W _A = γ ₁ + γ ₂ −γ ₀ , and W _A is called exfoliation work. However, the phenomenon of adhesion or separation actually observed may involve not only the interface of the laminate but also the entire vicinity of the interface, and the bond strength of the two layers in contact may affect it.

  FIG. 3 shows a cross-sectional structure taken along line B1-B2 shown in FIG. The display device 100 includes a display unit 104 including the pixel 106, a first drive circuit 112a, and a common connection portion 118. The display unit 104 includes the driving element layer 122 and the display element layer 124. The first drive circuit 112 a is formed in the drive element layer 122.

  FIG. 3 illustrates a mode in which the pixel 106 includes the first transistor 144a, the first capacitor 146a, and the second capacitor 146b, and the first driver circuit 112a includes the second transistor 144b and the third transistor 144c. The first transistor 144a, the second transistor 144b, the third transistor 144c, the first capacitance element 146a, and the second capacitance element 146b are formed in the driving element layer. These elements included in the pixel 106 and the first drive circuit 112 a are exemplification, and in actuality, the pixel circuit and the drive circuit are formed by any number of circuit elements such as transistors, capacitors, and resistors. The first transistor 144a illustrated in FIG. 3 is an n-channel type or a p-channel type, and one of the second transistor 144b and the third transistor 144c is an n-channel type and the other is a p-channel type. The first transistor 144a, the second transistor 144b, and the third transistor 144c have the same stacked structure.

  In addition to the first insulating layer 150, the second insulating layer 154, the third insulating layer 160, the fourth insulating layer 164, and the fifth insulating layer 168, the driving element layer 122 includes a semiconductor layer or a conductive layer between these insulating layers. It has a structure in which layers are laminated appropriately. In addition, the display element layer 124 includes each layer constituting the light emitting element 148 and a sixth insulating layer 170. From a functional point of view, the first insulating layer 150 may be referred to as a base insulating layer, the second insulating layer 154 may be referred to as a gate insulating layer, the third insulating layer 160 may be referred to as an interlayer insulating layer, and the fifth insulating layer may be referred to as a planarization layer. The sixth insulating layer 170 is an insulating layer provided between the pixels, and may be called a bank, a partition, or a pixel defining film. The first insulating layer 150, the second insulating layer 154, the third insulating layer 160, and the fifth insulating layer 168 are manufactured using an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride. The fourth insulating layer 164 and the sixth insulating layer 170 are made of an organic resin material such as polyimide resin, acrylic resin, epoxy resin, or acrylic resin.

  The light emitting element 148 has a structure in which the first electrode 172, the organic layer 174, and the second electrode 176 are stacked. The second electrode 176 is provided on the first electrode 172 and the sixth insulating layer 170. The organic layer 174 is provided in a region where at least the first electrode 172 and the second electrode 176 overlap. The common wiring 134 is provided in the common connection portion 118. The upper surface of the common wire 134 has a structure exposed from the insulating layer disposed on the upper layer side. FIG. 3 shows a structure in which the common wiring 134 is provided on the third insulating layer 160 and exposed from the upper fourth insulating layer 164, the fifth insulating layer 168, and the sixth insulating layer. The second electrode 176 is extended to the common connection portion 118 and electrically connected to the common wire 134.

  FIG. 4 shows a cross-sectional structure taken along line C1-C2 shown in FIG. FIG. 4 includes the display portion 104 including the pixel 106, the common connection portion 118, the bent region 120, and the terminal portion 114. The bending area 120 is disposed between the common connection portion 118 and the terminal portion 114. In the bent region 120, the first insulating layer 150, the second insulating layer 154, and the third insulating layer 160 are removed. With such a structure, the bent region 120 has cracks in the first insulating layer 150, the second insulating layer 154, and the third insulating layer 160 formed of an inorganic insulating film when the base member 102 is bent. It is possible to prevent the occurrence of a crack and the occurrence of a crack in the insulating layer in the display portion 104.

  In FIG. 4, the third wiring 162 c formed in the same layer as the gate electrode 156 is disposed between the second insulating layer 154 and the third insulating layer 160, and the fourth wiring formed in the same layer as the common wiring 134. A configuration in which the wire 162 d is connected to the terminal electrode 116 across the bent region 120 is shown. The fourth wiring 162 d is formed of a metal material, has ductility, does not break even if the base member 102 is bent, and is bent together with the base member 102.

  The terminal electrode 116 has a structure in which a third metal oxide layer 178 c is stacked on the terminal electrode layer 180. The third metal oxide layer 178c is provided so as to cover the exposed portion of the terminal electrode layer 180, and is provided as a protective film.

  The detailed structure of the pixel 106 shown in FIGS. 3 and 4 will be described with reference to FIG. FIG. 5 shows the cross-sectional structure of the pixel 106. The pixel 106 includes a first transistor 144 a formed in the driving element layer 122 and a light emitting element 148 formed in the display element layer 124. In the pixel 106, the driving element layer 122 may further include a first capacitor 146a and a second capacitor 146b. The first transistor 144a and the light emitting element 148 are electrically connected. Further, the first capacitive element 146a and the second capacitive element 146b are electrically connected to the first transistor 144a. For example, the first capacitive element 146a is electrically connected between the gate and source of the first transistor 144a, and the second capacitive element 146b is electrically connected between the drain of the first transistor 144a and an arbitrary constant potential line. .

  The voltage applied to the gate of the first transistor 144a controls the current (drain current) flowing between the source and the drain. The light emission intensity of the light emitting element 148 is controlled by the drain current of the first transistor 144a. The first capacitive element 146a is connected between the gate and source of the first transistor 144a to apply a gate voltage, and is provided to keep the gate-source voltage constant, and the second capacitive element 146b is a first capacitive element. It is provided to stabilize the potential of the electrode 178.

  The first transistor 144 a has a structure in which the semiconductor layer 152 provided on the first insulating layer 150, the second insulating layer 154, and the gate electrode 156 are stacked. In addition, the first capacitor 146a has a structure in which the semiconductor layer 152, the second insulating layer 154, and the first capacitor electrode 158a are stacked. The semiconductor layer 152 is formed of a semiconductor material such as amorphous silicon or polycrystalline silicon, or a metal oxide. The semiconductor layer 152 is insulated from the gate electrode 156 by the second insulating layer 154. A third insulating layer 160 is provided on the upper layer side of the gate electrode 156 and the first capacitance electrode 158a. The first wiring 162 a and the second wiring 162 b are provided on the upper layer side of the third insulating layer 160. As apparent from the comparison with FIG. 4, FIG. 5 shows an example in which the first wiring 162 a and the second wiring 162 b are provided in the same layer as the common wiring 134.

  The first wiring 162 a and the second wiring 162 b are in contact with the semiconductor layer 152 through the contact holes formed in the third insulating layer 160. For the gate electrode 156 and the first capacitance electrode 158a, aluminum (Al), molybdenum (Mo), tungsten (W), molybdenum-tungsten (MoW) alloy or the like is used, and the first wiring 162a and the second wiring 162b are aluminum. It manufactures using metal materials, such as (Al), titanium (Ti), a molybdenum- tungsten (MoW) alloy. For example, the first wiring 162a and the second wiring 162b are manufactured in a structure in which a film of titanium (Ti) or a molybdenum-tungsten (MoW) alloy is laminated on the upper layer side and the lower layer side of aluminum (Al).

  A fourth insulating layer 164 is provided on the first wiring 162a and the second wiring 162b. The fourth insulating layer 164 is used as a planarization film which embeds the uneven surface by the semiconductor layer 152, the gate electrode 156, the first wiring 162a, the second wiring 162b, and the like, and planarizes the surface. The fourth insulating layer 164 is made of an organic resin material as described above.

  The fourth insulating layer 164 is provided with a contact hole 166 that exposes part of the first wiring 162a. A first metal oxide layer 178 a is provided in accordance with the arrangement of the contact holes 166, and a second capacitance electrode 158 b is provided on the upper surface of the fourth insulating layer 164. The first metal oxide layer 178a and the second capacitance electrode 158b are manufactured using a conductive metal oxide material. Indium tin oxide (ITO), indium zinc oxide (IZO) or the like is used as the metal oxide material. The first metal oxide layer 178a is provided so as to cover the exposed portion of the first wiring 162a, and is provided as a protective film so that the exposed portion of the first wiring 162a is not damaged in the subsequent steps. And

  A fifth insulating layer 168 is stacked on the first metal oxide layer 178a and the second capacitance electrode 158b. The first electrode 172 is provided on the top surface of the fifth insulating layer 168. The first electrode 172 is electrically connected to the first wiring 162 a through a contact hole 166 penetrating the fifth insulating layer 168 and the fourth insulating layer 164. The first electrode 172 is provided to overlap the second capacitance electrode 158 b with the fifth insulating layer 168 interposed therebetween. The second capacitance element 146 b is formed in a region where the second capacitance electrode 158 b, the fifth insulating layer 168, and the first electrode 172 overlap. The fifth insulating layer 168 used as a dielectric film of the second capacitor 146b is made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride.

  The display element layer 124 is disposed substantially above the fifth insulating layer 168. A sixth insulating layer 170 is provided on the fifth insulating layer 168 to cover the peripheral portion of the first electrode 172 and to expose the inner region. The organic layer 174 is provided to cover the top surface of the first electrode 172 and the surface of the sixth insulating layer 170. In addition, the second electrode 176 is provided to cover the upper surfaces of the organic layer 174 and the sixth insulating layer 170. The light emitting element 148 is formed by the first electrode 172, the organic layer 174 and the second electrode 176. A region where the first electrode 172, the organic layer 174, and the second electrode 176 overlap is a light emitting region of the light emitting element 148. The sixth insulating layer 170 is made of an organic resin material to form a smooth level difference at the opening end that exposes the first electrode 172. As an organic resin material, an acrylic resin, a polyimide resin, a polyamide resin, etc. are used.

  The organic layer 174 is manufactured using a low molecular weight or high molecular weight organic EL material. When a low molecular weight organic EL material is used, for example, a guest-host organic EL material is used as the light emitting layer. Furthermore, a carrier injection layer (a hole injection layer, an electron injection layer), a carrier transport layer (a hole transport layer, an electron transport layer), and the like are appropriately provided to sandwich the light emitting layer. For example, the organic layer 174 has a structure in which the light emitting layer is sandwiched between the hole injection layer and the electron injection layer. In addition to the hole injection layer and the electron injection layer, the organic layer 174 is appropriately added with a hole transport layer, an electron transport layer, a hole block layer, an electron block layer, and the like.

  In the case of the bottom emission type (in the case where the screen is viewed from the second surface side of the base member 102) of the light emitting element 148, the first electrode 172 is transparent such as indium tin oxide (ITO) or indium zinc oxide (IZO) It is formed of a conductive film, and the second electrode 176 is formed of a metal film such as aluminum. In the case of the top emission type (in the case where the screen is viewed from the sealing layer 126 side), the first electrode 172 is formed of a metal film such as aluminum or silver (for example, a silver film is (A structure in which two layers of ITO film are sandwiched), the second electrode is a metal having a small work function such as lithium (Li), cesium (Cs), barium (Ba), magnesium (Ms), and aluminum (Al) or silver (Ag) ) And gold. For example, the second electrode 176 is formed of a transparent conductive film of ITO, IZO, or the like, or a magnesium-silver (MgAg) film or an aluminum-lithium (AlLi) film which is thinly formed to have translucency. The first electrode 172 is provided for each pixel 106, and the second electrode 176 is provided so as to spread over the plurality of pixels 106.

  The sealing layer 126 is provided on the top surface of the second electrode 176. The sealing layer 126 is manufactured using an inorganic insulating layer, or an inorganic insulating layer and an organic insulating layer. For example, the sealing layer 126 has a structure in which a first inorganic insulating layer 128a, an organic insulating layer 130, and a second inorganic insulating layer 128b are stacked. An inorganic insulating material such as a silicon nitride film or an aluminum oxide film is used as the first inorganic insulating layer 128 a and the second inorganic insulating layer 128 b. As the organic insulating layer 130, an acrylic resin, a polyimide resin, a polyamide resin, an epoxy resin, or the like is used.

  Although not illustrated in FIG. 5, a protective member such as a protective film, an optical film such as a polarizing film, or an antireflection film may be provided on the upper layer side of the sealing layer 126.

  FIG. 6 shows details of the common connection 118 shown in FIG. 3 and FIG. Common connection portion 118 includes common wiring 134. The common wiring 134 is connected to the second electrode 176 of the light emitting element 148. The potential of the second electrode 176 is controlled by the common wiring 134. The common wiring 134 is manufactured to have the same layer structure as the first wiring 162 a or the gate electrode 156. The common wire 134 is disposed on the second insulating layer 154 when provided in the same layer as the gate electrode 156. The common wire 134 is disposed on the third insulating layer 160 when provided in the same layer as the first electrode 172 a. FIG. 6 shows an aspect in which the common wire 134 is disposed on the third insulating layer 160. When the common wire 134 is formed in the same layer as the first wire 162a, it has a structure in which a film of titanium (Ti) or a molybdenum-tungsten (MoW) alloy is laminated on the upper and lower sides of aluminum (Al). .

  The fourth insulating layer 164 is disposed on the common wire 134. In the common connection portion 118, the common wiring 134 is exposed from the fourth insulating layer 164 by the first opening groove 132a provided in the fourth insulating layer 164. A second metal oxide layer 178 b is provided on the upper surface of the common wiring 134 exposed from the fourth insulating layer 164 by the first opening groove 132 a. The second metal oxide layer 178 b is formed using a conductive metal oxide material. Indium tin oxide (ITO), indium zinc oxide (IZO) or the like is used as the metal oxide material. The second metal oxide layer 178 b is provided so as to cover the exposed portion of the common wiring 134, and is intended to be provided as a protective film so that the exposed portion of the common wiring 134 is not damaged in the subsequent steps. .

  The end of the second electrode 176 reaches the first opening groove 132a. A portion of the second electrode 176 overlaps a portion of the common wire 134 and is in contact with the second metal oxide layer 178 b. Thus, the second electrode 176 is electrically connected to the common wiring 134.

  The common wire 134 has a region overlapping with the second electrode 176 and a region not overlapping with the second electrode 176. In other words, the inner region of the common wiring 134 (the region on the display unit 104 side) and the second electrode 176 overlap, and the outer region (the region on the end of the base member 102) does not overlap the second electrode 176 Have.

  The metal layer 136 is provided in a region where the common wire 134 does not overlap with the second electrode 176. The metal layer 136 is formed of a material different from that of the second electrode 176. The metal layer 136 is formed of a metal material containing one or more elements selected from aluminum (Al), titanium (Ti), germanium (Ge), gallium (Ga), and indium (In). The metal layer 136 is provided with a thickness of 1 nm to 100 nm, preferably 5 nm to 10 nm. By providing such a metal layer 136, the first inorganic insulating layer 128a is not in direct contact with the second metal oxide layer 178b, and adhesion can be improved. Further, in the common connection portion 118, the first inorganic insulating layer 128a is in contact with two kinds of metals, the second electrode 176 and the metal layer 136, whereby the adhesion with the base surface can be improved.

  Although FIG. 6 shows an aspect in which the end portions of the second electrode 176 and the metal layer 136 are adjacent to each other, the common connection portion 118 is not limited to such a form. As another form, the second electrode 176 and the metal layer 136 may partially overlap. For example, a portion of the metal layer 136 may overlap on the second electrode 176.

  As shown in FIGS. 3 and 4, the first inorganic insulating layer 128 a constituting the sealing layer 126 has a first region 138 in contact with the second electrode 176. The first region 138 extends over the display portion 104 and part of the common connection portion 118. The first inorganic insulating layer 128 a also has a second region 140 in contact with the metal layer 136. Furthermore, the first inorganic insulating layer 128 a is a region where the organic insulating layer 130 is not provided in the region outside the second region 140 (the end portion side of the base member 102), and the third inorganic insulating layer 128 b is stacked. It has a region 142. The first region 138 overlaps a portion of the first opening groove 132a, and the second region 140 overlaps the first opening groove 132a. The first inorganic insulating layer 128 a has a structure in which the second electrode 176 and the metal layer 136 are provided in the common connection portion 118 so as not to be in direct contact with the second metal oxide layer 178 b. The second region 140 has a structure in which the common wire 134, the second metal oxide layer 178b, and the metal layer 136 are stacked.

  The adhesion of the sealing layer 126 directly results in the adhesion between the first inorganic insulating layer 128a and the base surface. In the display portion 104, the first inorganic insulating layer 128a has the second electrode 176 as a base surface, and in the common connection portion 118, the second electrode 176 and the metal layer 136 serve as a base surface. If the metal layer 136 is not provided in the common connection portion 118, the second metal oxide layer 178b is a lower ground of the first inorganic insulating layer 128a. In this case, there is a problem that the adhesion of the first inorganic insulating layer 128a is lowered due to the unevenness of the surface of the second metal oxide layer 178b and the residue on the surface of the second metal oxide layer 178b. . However, in the present embodiment, the first inorganic insulating layer 128 a is in direct contact with the second metal oxide layer 178 b by providing the metal layer 136 on the second metal oxide layer 178 b. Is prevented. The metal layer 136 and the second metal oxide layer 178 b contain the same or similar metal (transition metal), and adhesion is improved as compared with the case where the metal layer 136 and the second metal oxide layer 178 b are in contact with the first inorganic insulating layer 128 a. That is, by covering the upper surface of the second metal oxide layer 178b with the second electrode 176 and the metal layer 136 in the common connection portion 118, the adhesion to the lower ground of the first inorganic insulating layer 128a can be enhanced. Become.

  According to the present embodiment, by providing the metal layer 136 in the common connection portion 118, the adhesion of the sealing layer 126 can be improved. Thus, peeling of the sealing layer 126 is prevented, and the reliability of the display device 100 can be improved.

  Note that, as shown in FIGS. 3 and 6, in the common connection portion 118, the first insulating layer 150, the second insulating layer 154, and the third insulating layer 160 are stacked. The common connection portion 118 has a structure in which at least the fourth insulating layer 164 and the sixth insulating layer 170 are removed. As described above, the first insulating layer 150, the second insulating layer 154, and the third insulating layer 160 are all made of an inorganic insulating material. Therefore, the common connection portion 118 is a region where the organic insulating layer is removed and the inorganic insulating layer is stacked.

  The first opening groove 132 a from which the fourth insulating layer 164 and the sixth insulating layer 170 are removed is provided to surround the outer periphery of the display unit 104. Similarly, the first insulating layer 150, the second insulating layer 154, and the third insulating layer 160 are laminated on the outer side of the first opening groove 132a (the end portion side of the base member 102), and the fourth insulating layer 164 and the sixth insulating layer 160 are formed. A second opening groove 132b in which the insulating layer 170 is not provided may be provided. The second opening groove 132 b is provided to surround the display unit 104. The first opening groove 132 a is filled with the sealing layer 126. In the second opening groove 132b, the first inorganic insulating layer 128a and the second inorganic insulating layer 128b that constitute the sealing layer 126 are provided along the opening. With such a structure, the fourth insulating layer 164 and the sixth insulating layer 170 are not exposed to the outside. That is, the organic insulating film which has a relatively high water vapor transmission rate compared to the inorganic insulating film is not exposed to the outer surface. Thereby, the penetration of moisture (water vapor) into the fourth insulating layer 164 and the sixth insulating layer 170 can be prevented.

  The organic insulating layer 130 of the sealing layer 126 is provided to fill the first opening groove 132 a of the common connection portion 118. The organic insulating layer 130 is manufactured by applying a composition including a precursor of an organic resin material and a solvent. In this case, the coating film having fluidity is blocked by the ribs of the fourth insulating layer 164b and the sixth insulating layer 170b, and is prevented from flowing out beyond the first opening groove 132a. The first opening groove 132 a prevents the organic insulating layer 130 from being exposed at the end of the sealing layer 126. On the other hand, the first inorganic insulating layer 128a and the second inorganic insulating layer 128b are provided to the outside of the first opening groove 132a and are provided along the second opening groove 132b. Thus, the organic insulating layer 130 is included in the first inorganic insulating layer 128 a and the second inorganic insulating layer 128 b and has a structure that is not exposed to the outside. Since the sealing layer 126 has a structure in which the organic insulating layer 130 is not exposed to the outside, gas barrier properties such as water vapor can be enhanced.

  Since the region including the sealing layer 126, the first opening groove 132a, and the second opening groove 132b shown in FIGS. 3 and 6 has a function of preventing moisture from entering the display portion 104, “water Also called a blocking area. The display device 100 having such a moisture blocking structure reduces the penetration of moisture into the light emitting element 148. Furthermore, in the display device 100 according to the present embodiment, since the adhesion of the sealing layer 126 is maintained at the common connection portion 118, the effect of preventing the generation of non-light emitting pixels called dark spots in the display portion 104 is enhanced. be able to.

  Next, a method of manufacturing the display device 100 according to an embodiment of the present invention will be described. In the following description, a method of manufacturing the display device 100 will be described based on the cross-sectional structure along line B1-B2 shown in FIG.

  In FIG. 7, a first transistor 144a, a second transistor 144b, a third transistor 144c, and a first capacitive element 146a are formed on the first surface of the base member 102, and a fourth insulating layer 164 is formed to cover these elements. Indicates the stage formed. A common wire 134 is formed between the third insulating layer 160 and the fourth insulating layer 164. The fourth insulating layer 164 is formed of an organic resin material such as polyimide resin, acrylic resin, or epoxy resin. The fourth insulating layer 164 is formed with a thickness of 0.5 μm to 5 μm. The surface of the fourth insulating layer 164 is planarized using the fluidity when the composition including the precursor of the organic resin material is deposited on the base member 102.

  FIG. 8 shows the step of forming the metal oxide layer 178, the second capacitance electrode 158b, and the fifth insulating layer 168 on the upper surface of the planarized fourth insulating layer 164. A contact hole 166 is formed in the fourth insulating layer 164 to expose the first wire 162a. In the fourth insulating layer 164, a first opening groove 132a for exposing the common wire 134 and a second opening groove 132b outside the first opening groove 132a are formed. The contact hole 166, the first opening groove 132a, and the second opening groove 132b may be simultaneously formed.

  In the region where the contact hole 166 is formed, a first metal oxide layer 178a is formed to cover the first wiring 162a. A second metal oxide layer 178 b is formed in the first opening groove 132 a so as to cover the exposed common wiring 134. Thereafter, the fifth insulating layer 168 is formed. An opening is formed in the fifth insulating layer 168 at a position overlapping the contact hole 166 so as to expose the first metal oxide layer 178a. In the fifth insulating layer 168, an opening is formed in a region overlapping the first opening groove 132a and the second opening groove 132b. Alternatively, the fifth insulating layer 168 is removed by etching outside the first opening groove 132a (the end side of the base member 102). The fifth insulating layer 168 is formed of an inorganic insulating film such as a silicon nitride film or a silicon oxynitride film.

  FIG. 9 shows a step of forming the first electrode 172 on the fifth insulating layer 168 and further forming the sixth insulating layer 170. Although not shown in detail in FIG. 9, the first electrode 172 is formed by laminating a transparent conductive film and a metal film. For example, the first electrode 172 has a structure in which three layers of an IZO film, an aluminum film, and an IZO film are stacked in this order. The first electrode 172 has a light reflecting surface by having such a laminated structure. The first electrode 172 is formed to overlap the second capacitance electrode 158 b with the fifth insulating layer 168 interposed therebetween. A second capacitor 146b is formed in a region where the first electrode 172, the fifth insulating layer 168, and the second capacitor electrode 158b overlap.

  The sixth insulating layer 170 covers the peripheral portion of the first electrode 172, and an opening is formed to expose the inner region. Also, an opening for exposing the first opening groove 132a and the second opening groove 132b is formed. The sixth insulating layer 170 is formed of, for example, a polyimide resin, an acrylic resin, an epoxy resin, or the like, using a photosensitive organic resin material. The sixth insulating layer 170 is formed by applying a photosensitive organic resin material and then performing exposure and development processing so as to form a predetermined opening. A coating film of a photosensitive organic resin material is applied to substantially the entire surface of the base member 102. At this time, as shown in FIG. 9, the exposure processing is performed so that the inner region excluding the peripheral portion of the first electrode 172, the first opening groove 132a, and the second opening groove 132b are exposed. Thus, the sixth insulating layer 170 is formed on the fourth insulating layer 164, and the sixth insulating layer 170b is formed on the fourth insulating layer 164b in the region where the opening groove is provided.

  FIG. 10 shows the steps of forming an organic layer 174 and a second electrode 176. The organic layer 174 is produced by vapor deposition or printing. The organic layer 174 includes a carrier injection layer (a hole injection layer, an electron injection layer), a carrier transport layer (a hole transport layer, an electron transport layer), a carrier block layer (a hole), in addition to the light emitting layer containing an organic EL material. A block layer and an electron block layer) are appropriately provided. A shadow mask (fine mask) is used for the organic layer 174, and the organic layer 174 is formed on the display unit 104. The second electrode 176 is made of a magnesium-silver (MgAg) film, an aluminum-lithium (AlLi) film, or the like. The second electrode 176 is manufactured to have a light-transmitting thickness. For example, the second electrode 176 is fabricated with a thickness of 0.1 μm to 0.2 μm.

  The metal film for forming the second electrode 176 is formed by vapor deposition using a shadow mask 182 (fine mask) so as to cover the entire surface of the display unit 104. At this time, the second electrode 176 is formed so as to overlap with a partial region of the common wire 134 in the first opening groove 132a. A second metal oxide layer 178 b is provided on the common wire 134. The second electrode 176 is formed to overlap the common wiring 134 through the second metal oxide layer 178 b. The second electrode 176 is preferably formed so as to cover the entire common wire 134 exposed in the first opening groove 132 a, but in consideration of the alignment accuracy of the shadow mask 182 used at the time of film formation, the second electrode 176 Are formed so as not to protrude outside the first opening groove 132a (not to protrude from the common connection portion 118). That is, the end of the second electrode 176 is formed so as not to be disposed outside the end of the outer side of the common wire 134.

  By forming the second electrode 176 in such a configuration, the second electrode 176 can be reliably covered with the sealing layer 126 manufactured in a later step. Thus, the second electrode 176 containing a metal that reacts with water (water vapor or humidity) such as lithium (Li) or magnesium (Mg) is provided so as not to protrude from the first opening groove 132a, whereby the light emitting element 148 is formed. Can be prevented.

  The sealing layer 126 is formed on the second electrode 176 as described in FIG. At this stage, a part of the common wire 134 is not covered by the second electrode 176. In order to maintain the sealing performance, the sealing layer 126 needs to be manufactured so as to increase the adhesion to the base surface and not to peel off. The lower ground of the sealing layer 126 is roughly divided into a region in which the second electrode 176 is provided and a region in which portions other than the second electrode 176 are provided. Specifically, as shown in FIG. 10, the lower surface of the sealing layer 126 (in other words, the lower surface of the first inorganic insulating layer 128a) is a first region 138 provided with a second electrode 176; The second region 140 in which the common wire 134 is exposed from the second electrode 176 in the common connection portion 118 (in other words, a region in which the second metal oxide layer 178 b is exposed from the second electrode 176); Further, it can be classified into the third region 142 where the sixth insulating layer 170, the fourth insulating layer 164, or the third insulating layer 160 is exposed outside.

In this case, the sealing layer 126 (the first inorganic insulating layer 128 a) needs to be careful of the adhesion of the second region 140. In this case, the second metal oxide layer 178 b is formed of a metal oxide such as an ITO film or an IZO film. The second metal oxide layer 178 b is formed by etching after forming a coating of a metal oxide on substantially the entire surface of the base member 102. For etching such metal oxides, wet etching using a solution such as hydrogen iodide (HI), hydrogen oxalate (BrH), ferric chloride + hydrochloric acid (FeCl ₃ + HCl), or a halogen gas system, It is carried out by dry etching using an organic gas system.

  After the etching of the metal oxide film, for example, as shown in FIG. 11, a residue 199 may remain on the surface of the second metal oxide layer 178b. The residue 199 is considered to be a reaction by-product generated in the process of etching the metal oxide. While such a residue 199 can not be easily removed by washing, it has a problem that the adhesion with the base surface is low. For example, in the case where the first inorganic insulating layer 128a is formed as the sealing layer 126 over the second metal oxide layer 178b, there is a problem that the residue 199 and the second metal oxide layer 178b are peeled off. It becomes. In addition, when the residue 199 is large, the first inorganic insulating layer 128a can not be sufficiently covered, which also causes a problem that the first inorganic insulating layer 128a is easily peeled off at the interface with the second metal oxide layer 178b.

  FIG. 12 shows the step of forming the metal layer 136 in the second region 140 (the region not covered by the second electrode 176 in the common connection 118). The metal layer 136 is fabricated by sputtering using a shadow mask 182 that exposes the second region 140 and shields other regions. The metal layer 136 is made of a material different from that of the second electrode 176. The metal layer 136 is formed with a thickness of 1 nm to 100 nm, preferably 5 nm to 10 nm. The metal layer 136 is manufactured, for example, by sputtering an inert gas such as argon using a target of aluminum (Al), titanium (Ti), or germanium (Ge). Alternatively, the metal layer 136 may be formed of a metal material such as molybdenum (Mo), tantalum (Ta), or molybdenum-tungsten (MoW). Furthermore, the metal layer 136 may be formed by evaporation using a metal material such as gallium (Ga) or indium (In).

  FIG. 13 shows the step of forming the first inorganic insulating layer 128 a that constitutes the sealing layer 126. The first inorganic insulating layer 128 a is formed on substantially the entire surface of the peripheral region including the display portion 104 and the common connection portion 118. The first inorganic insulating layer 128a is an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film, which has a low water vapor transmission rate, and is formed to a thickness of about 0.1 μm to 5 μm. The first inorganic insulating layer 128 a is formed of the above-described inorganic insulating film by plasma CVD (Chemical Vapor Deposition).

  The region where the first inorganic insulating layer 128 a is formed is divided into a first region 138 in contact with the second electrode 176, a second region 140 in contact with the metal layer 136, and a third region 142 outside the second region 140. be able to. The first inorganic insulating layer 128 a is formed in close contact with the second electrode 176 in the first region 138. The first inorganic insulating layer 128 a is formed in close contact with the metal layer 136 in the second region 140. Since the second region 140 is covered with the metal layer 136 even if the residue adhered in the step of etching the second metal oxide layer 178 b remains, the first inorganic insulating layer 128 a Peeling is prevented. Further, in the third region 142, the surfaces of the fourth insulating layer 164 and the sixth insulating layer 170 formed of an organic resin material are covered with the first inorganic insulating layer 128a, so the fourth insulating layer 164 and the sixth insulating layer Infiltration of water into 170 is prevented.

  After forming the first inorganic insulating layer 128a, the organic insulating layer 130 and the second inorganic insulating layer 128b are formed, whereby the display device 100 shown in FIG. 3 is manufactured. The organic insulating layer 130 covers the display unit 104 and is formed to fill the first opening groove 132a. The organic insulating layer 130 is formed by a printing method using a resin material such as an acrylic resin, a polyimide resin, or an epoxy resin. For example, the organic insulating layer 130 may be formed to a thickness of 5 μm to 20 μm by inkjet printing. The organic insulating layer 130 is formed such that the end does not exceed the first opening groove 132a. In the process of applying the organic insulating layer 130, the first opening groove 132a may be filled. On the organic insulating layer 130, the second inorganic insulating layer 128b is considered to have a low water vapor transmission rate, such as a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, etc., similarly to the first inorganic insulating layer 128a. It is formed of an inorganic insulating film.

  According to this embodiment, by providing the metal layer 136 adjacent to the second electrode 176 in the common connection portion 118, peeling of the sealing layer 126 can be prevented. In other words, by providing a metal layer 136 other than the second electrode 176 on the lower surface of the sealing layer 126, and having a structure in which the residue remaining on the lower layer side does not contact the sealing layer 126, the sealing layer Peeling of 126 can be prevented.

100: display device 102: base member 104: display portion 106: pixel 108: scanning signal line 110: video signal line 112: driving circuit 114: terminal portion 116: terminal electrode 118: common connection portion 120: bending region 122: driving element layer 124: display element layer 126: sealing Stop layer 128: inorganic insulating layer 130: organic insulating layer 132: opening groove 134: common wiring 136: metal layer 138: first region 140 · · Second region, 142 · · · Third region, 144 · · · Transistor, 146 · · · Capacitive element, 148 · · · light emitting element, 150 · · · first insulating layer, 152 · · · semiconductor layer, 154 · · · second insulating layer, 156 · · · gate electrode, 158 · · · Capacitance electrode 160: third insulating layer 162: wiring 164: fourth insulating layer 166: contact hole 168: fifth insulating layer 170: sixth insulating Layer 172: first electrode 174: organic layer 176: second electrode 178: metal oxide layer 180: terminal electrode layer 182: shadow mask 199 ... Residue

Claims (20)

A display unit in which a plurality of pixels are arranged;
A sealing layer covering the display unit;
A common connection outside the display unit;
The plurality of pixels are
A first electrode,
A second electrode disposed on the first electrode and covering the entire display unit and overlapping a part of the common connection portion;
And an organic layer between the first electrode and the second electrode,
The common connection portion includes a metal layer disposed outside the second electrode,
The sealing layer is
At least one inorganic insulating layer,
The end of the inorganic insulating layer is disposed outside the second electrode,
The inorganic insulating layer is
A first region in contact with the second electrode;
And a second region in contact with the metal layer outside the first region.
A display device characterized by The sealing layer is
A first inorganic insulating layer,
A second inorganic insulating layer disposed on the first inorganic insulating layer;
An organic insulating layer between the first inorganic insulating layer and the second inorganic insulating layer,
The first inorganic insulating layer is
A first region in contact with the second electrode;
And a second region in contact with the metal layer outside the first region.
The display device according to claim 1.   The display device according to claim 2, wherein the first inorganic insulating layer and the second inorganic insulating layer are a silicon nitride film or a silicon oxynitride film.   The display according to claim 1, wherein the metal layer contains one or more elements selected from aluminum (Al), titanium (Ti), germanium (Ge), gallium (Ga), and indium (In). apparatus.   The display according to claim 1, wherein the second electrode comprises one element selected from aluminum (Al) and silver (Ag) and one element selected from lithium (Li) and magnesium (Mg). apparatus.   The display device according to claim 1, wherein the second electrode and the metal layer have an overlapping region. A transistor,
An interlayer insulating layer on the transistor,
Common wiring on the interlayer insulating layer,
A planarization layer disposed on the interlayer insulating layer and embedding the transistor;
A light emitting element on the planarizing layer;
A partition layer disposed on the interlayer insulating layer and surrounding the light emitting element;
A sealing layer covering the light emitting element and the partition layer,
The light emitting element is
A first electrode on the planarization layer;
A second electrode on the first electrode and the second electrode on the partition wall layer;
And an organic layer between the first electrode and the second electrode,
The common wiring is exposed from the planarization layer and the partition layer,
The second electrode has a region extending from above the partition layer and overlapping the common wiring,
The sealing layer is
At least one inorganic insulating layer,
The end of the inorganic insulating layer is disposed outside the second electrode,
The inorganic insulating layer is
A first region in contact with the second electrode;
And a second region overlapping the common wiring outside the first region,
The second area is
Including a metal layer between the inorganic insulating layer and the common wiring,
A display device characterized by The sealing layer is
A first inorganic insulating layer,
A second inorganic insulating layer disposed on the first inorganic insulating layer;
An organic insulating layer between the first inorganic insulating layer and the second inorganic insulating layer,
The first inorganic insulating layer is
A first region in contact with the second electrode;
And a second region overlapping the common wiring outside the first region,
The second area is
Including a metal layer between the first inorganic insulating layer and the common wiring,
The display device according to claim 7.   The display device according to claim 8, wherein the first inorganic insulating layer and the second inorganic insulating layer are a silicon nitride film or a silicon oxynitride film.   The display according to claim 7, wherein the metal layer contains one or more elements selected from aluminum (Al), titanium (Ti), germanium (Ge), gallium (Ga), and indium (In). apparatus.   The display according to claim 7, wherein the second electrode comprises one element selected from aluminum (Al) and silver (Ag) and one element selected from lithium (Li) and magnesium (Mg). apparatus.   The display device according to claim 7, wherein the second electrode and the metal layer have an overlapping region. A first insulating layer,
A semiconductor layer on the first insulating layer,
A second insulating layer on the semiconductor layer,
A gate electrode having a region overlapping the semiconductor layer on the second insulating layer;
A third insulating layer on the second insulating layer and the gate electrode;
First wiring and common wiring on the third insulating layer;
The third insulating layer, the first wiring, and a planarization layer on the common wiring;
A first electrode on the planarization layer;
A partition layer having an opening in a region overlapping with the first electrode;
A second electrode on the first electrode and the second electrode on the partition wall layer;
An organic layer between the first electrode and the second electrode;
A sealing layer on the second electrode;
The planarizing layer has an opening groove for exposing the common wiring,
The second electrode has a region extending from above the partition layer and overlapping the common wire,
The sealing layer is
At least one inorganic insulating layer,
The end of the inorganic insulating layer is disposed outside the second electrode,
The inorganic insulating layer is
A first region in contact with the second electrode;
And a second region overlapping the common wiring outside the first region,
The second area is
Including a metal layer between the inorganic insulating layer and the common wiring,
A display device characterized by   The display device according to claim 13, wherein the first area includes an area overlapping with a part of the opening groove, and the second area overlaps the opening groove.   The display device according to claim 13, wherein the second region includes a metal oxide layer between the common wiring and the metal layer. The sealing layer is
A first inorganic insulating layer,
A second inorganic insulating layer disposed on the first inorganic insulating layer;
An organic insulating layer between the first inorganic insulating layer and the second inorganic insulating layer,
The first inorganic insulating layer is
A first region in contact with the second electrode;
And a second region overlapping the common wiring outside the first region,
The second area is
Including a metal layer between the first inorganic insulating layer and the common wiring,
The display device according to claim 13.   The display device according to claim 16, wherein the first inorganic insulating layer and the second inorganic insulating layer are a silicon nitride film or a silicon oxynitride film.   The display according to claim 13, wherein the metal layer contains one or more elements selected from aluminum (Al), titanium (Ti), germanium (Ge), gallium (Ga), and indium (In). apparatus.   The display according to claim 13, wherein the second electrode comprises one element selected from aluminum (Al) and silver (Ag) and one element selected from lithium (Li) and magnesium (Mg). apparatus.   The display device according to claim 13, wherein the second electrode and the metal layer have an overlapping region.

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