JP2018067672A - 酸化物半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000010936 titanium Substances 0.000 claims abstract description 12
- 229910052718 tin Inorganic materials 0.000 claims abstract description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 229910052738 indium Inorganic materials 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- 229910052800 carbon group element Inorganic materials 0.000 claims abstract description 5
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 5
- 229910021480 group 4 element Inorganic materials 0.000 claims abstract description 5
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 4
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 238000000137 annealing Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims 2
- 239000010408 film Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 8
- 238000005224 laser annealing Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 206010021143 Hypoxia Diseases 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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Abstract
【解決手段】酸化物半導体装置は、インジウム(In),ガリウム(Ga),亜鉛(Zn)の酸化物半導体で構成された活性層領域を備え、この活性層領域に、第4族元素のチタン(Ti),ジルコニウム(Zr),ハフニウム(Hf)又は第14族元素の炭素(C),ケイ素(Si),ゲルマニウム(Ge),スズ(Sn)から選択される元素を、数密度で1×1016〜1×1020cm-3の範囲内で含有させた。
【選択図】図1
Description
インジウム(In),ガリウム(Ga),亜鉛(Zn)の酸化物半導体の活性層領域を備える酸化物半導体装置であって、第4族元素のチタン(Ti),ジルコニウム(Zr),ハフニウム(Hf)又は第14族元素の炭素(C),ケイ素(Si),ゲルマニウム(Ge),スズ(Sn)から選択される元素を、数密度で1×1016〜1×1020cm-3の範囲内で含有させた前記活性層領域を備えることを特徴とする酸化物半導体装置。
13:チャネル層,14:ソース端子,15:ドレイン端子,
16:パッシベーション膜
Claims (3)
- インジウム(In),ガリウム(Ga),亜鉛(Zn)の酸化物半導体で構成される活性層領域を有する酸化物半導体装置であって、第4族元素のチタン(Ti),ジルコニウム(Zr),ハフニウム(Hf)又は第14族元素の炭素(C),ケイ素(Si),ゲルマニウム(Ge),スズ(Sn)から選択される元素を、数密度で1×1016〜1×1020cm-3の範囲内で含有させた前記活性層領域を備えることを特徴とする酸化物半導体装置。
- 前記活性層領域は、波長400nm以下のレーザーを照射してアニールした領域であることを特徴とする請求項1記載の酸化物半導体装置。
- インジウム(In),ガリウム(Ga),亜鉛(Zn)の酸化物半導体で構成される活性層領域を有する酸化物半導体装置の製造方法であって、
前記活性層領域に、第4族元素のチタン(Ti),ジルコニウム(Zr),ハフニウム(Hf)又は第14族元素の炭素(C),ケイ素(Si),ゲルマニウム(Ge),スズ(Sn)から選択される元素を、数密度で1×1016〜1×1020cm-3の範囲内イオン注入する工程と、
イオン注入後の前記活性層領域に、波長400nm以下のレーザーを照射して、アニールする工程とを有することを特徴とする酸化物半導体の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016206647A JP2018067672A (ja) | 2016-10-21 | 2016-10-21 | 酸化物半導体装置及びその製造方法 |
US16/343,022 US10896978B2 (en) | 2016-10-21 | 2017-09-04 | Oxide semiconductor device and method for manufacturing same |
CN201780056959.9A CN109716532A (zh) | 2016-10-21 | 2017-09-04 | 氧化物半导体装置及其制造方法 |
PCT/JP2017/031817 WO2018074083A1 (ja) | 2016-10-21 | 2017-09-04 | 酸化物半導体装置及びその製造方法 |
KR1020197007621A KR20190062397A (ko) | 2016-10-21 | 2017-09-04 | 산화물 반도체 장치 및 그 제조 방법 |
TW106135273A TW201820423A (zh) | 2016-10-21 | 2017-10-16 | 氧化物半導體裝置及其製造方法 |
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JP2016206647A JP2018067672A (ja) | 2016-10-21 | 2016-10-21 | 酸化物半導体装置及びその製造方法 |
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US (1) | US10896978B2 (ja) |
JP (1) | JP2018067672A (ja) |
KR (1) | KR20190062397A (ja) |
CN (1) | CN109716532A (ja) |
TW (1) | TW201820423A (ja) |
WO (1) | WO2018074083A1 (ja) |
Cited By (1)
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JP2021034623A (ja) * | 2019-08-27 | 2021-03-01 | 株式会社デンソー | 半導体装置の製造方法 |
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WO2019244945A1 (ja) * | 2018-06-21 | 2019-12-26 | 株式会社アルバック | 酸化物半導体薄膜、薄膜トランジスタおよびその製造方法、ならびにスパッタリングターゲット |
JP7128284B2 (ja) * | 2019-06-28 | 2022-08-30 | 株式会社アルバック | スパッタリングターゲットの製造方法 |
US11430898B2 (en) * | 2020-03-13 | 2022-08-30 | Applied Materials, Inc. | Oxygen vacancy of amorphous indium gallium zinc oxide passivation by silicon ion treatment |
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JP2011101027A (ja) * | 2009-03-31 | 2011-05-19 | Panasonic Corp | フレキシブル半導体装置およびその製造方法 |
JP2012028481A (ja) * | 2010-07-22 | 2012-02-09 | Fujifilm Corp | 電界効果型トランジスタ及びその製造方法 |
JP2013041945A (ja) * | 2011-08-12 | 2013-02-28 | Fujifilm Corp | 薄膜トランジスタ及びその製造方法、表示装置、イメージセンサー、x線センサー並びにx線デジタル撮影装置 |
JP2013110176A (ja) * | 2011-11-18 | 2013-06-06 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置の作製方法 |
JP2015228495A (ja) * | 2014-05-08 | 2015-12-17 | 株式会社Flosfia | 結晶性積層構造体、半導体装置 |
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JP2021034623A (ja) * | 2019-08-27 | 2021-03-01 | 株式会社デンソー | 半導体装置の製造方法 |
WO2021038909A1 (ja) * | 2019-08-27 | 2021-03-04 | 株式会社デンソー | 半導体装置の製造方法 |
JP7230743B2 (ja) | 2019-08-27 | 2023-03-01 | 株式会社デンソー | 半導体装置の製造方法 |
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KR20190062397A (ko) | 2019-06-05 |
US20190288115A1 (en) | 2019-09-19 |
WO2018074083A1 (ja) | 2018-04-26 |
CN109716532A (zh) | 2019-05-03 |
TW201820423A (zh) | 2018-06-01 |
US10896978B2 (en) | 2021-01-19 |
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