KR20170113254A - 바이어스된 다중-포트 인젝션 세팅들을 통한 반경 및 두께 제어 - Google Patents
바이어스된 다중-포트 인젝션 세팅들을 통한 반경 및 두께 제어 Download PDFInfo
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- 238000002347 injection Methods 0.000 title abstract description 6
- 239000007924 injection Substances 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000007789 gas Substances 0.000 claims description 50
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 26
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- 238000009827 uniform distribution Methods 0.000 claims description 3
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 claims description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 claims description 2
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910000083 tin tetrahydride Inorganic materials 0.000 claims description 2
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 claims description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 2
- 238000009826 distribution Methods 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 description 10
- 229910052732 germanium Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 229910005898 GeSn Inorganic materials 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 229910020328 SiSn Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 description 1
- QCAWEPFNJXQPAN-UHFFFAOYSA-N methoxyfenozide Chemical compound COC1=CC=CC(C(=O)NN(C(=O)C=2C=C(C)C=C(C)C=2)C(C)(C)C)=C1C QCAWEPFNJXQPAN-UHFFFAOYSA-N 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
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Abstract
교차류 반응기에서 기판 상에 더 좋은 막 균일도를 얻기 위한 가스 분배 시스템이 개시된다. 더 좋은 막 균일도는 상기 가스 분배 시스템의 개별 인젝션 포트들 상에서 비대칭적 바이어스에 의해 얻어질 수 있다. 상기 가스 분배 시스템은 상기 막 성질들의 다양한 조율성을 허용한다.
Description
본 발명은 반도체 기판들을 처리하기 위한 반응 시스템에 관한 것이다. 상세하게는, 본 발명은 상기 반응 시스템 내에서 기판들에 대하여 개선된 막 균일도를 가져오는 가스 분배 장치를 바이어스(bias)하는 것에 관한 것이다.
교차류(cross-flow) 반응 시스템에서, 가스들이 상기 기판의 표면을 가로질러 흐를 때 막의 퇴적이 일어날 수 있다. 이들 퇴적 공정들은 상기 기판의 가장자리에 비하여 상기 기판의 중심에서 막의 더 큰 퇴적을 초래할 수 있다. 부가하여, 막의 화학적 조성이 상기 기판의 상기 가장자리와 비교하여 상기 기판의 상기 중심에서 다를 수 있다는 것이 가능할 것이다.
퇴적된 막의 두께 및 화학적 조성의 불균일한 분포는 반도체 기판들의 처리에서 문제가 되는 것으로 증명될 수 있다. 상기 층은 웨이퍼 소자 내에서 비-균일한 막 두께 및 조성에 기인한 이슈들을 가질 수 있으며, 이것은 동일한 기판 상에서 소자 성능(예를 들어 이동도, 등)에서 불균일성을 유발할 수 있다.
결과적으로, 막 균일도를 향상시키는 방식으로 가스를 분배하는 시스템에 대한 필요가 요구된다.
본 발명이 해결하고자 하는 과제는 기판 상에 균일한 막을 형성하는 개선된 방법을 제공하는 데 있다.
전구체 가스 인젝션의 비대칭적 바이어싱을 수행하기 위한 방법이 개시된다. 상기 방법은, 처리되어야 할 기판을 보유하는, 반응 챔버를 제공하는 단계; 제1 가스 소오스로부터의 제1 가스를 상기 기판으로 제공하기 위한 복수의 제1 개별 포트 인젝터들을 포함하는 제1 다중 포트 인젝터 어셈블리를 제공하는 단계; 제2 가스 소오스로부터의 제2 가스를 상기 기판으로 제공하기 위한 복수의 제2 개별 포트 인젝터들을 포함하는 제2 다중 포트 인젝터 어셈블리를 제공하는 단계; 상기 제1 다중 포트 인젝터 어셈블리로 상기 기판 상으로 상기 제1 가스를 흘려주는 단계로서, 상기 제1 다중 포트 인젝터 어셈블리는 상기 복수의 제1 개별 포트 인젝터들의 비대칭적 바이어스를 가지는, 상기 제1 가스를 흘려주는 단계; 및 상기 제2 다중 포트 인젝터 어셈블리로 상기 기판 상으로 상기 제2 가스를 흘려주는 단계로서, 상기 제2 다중 포트 인젝터 어셈블리는 상기 복수의 제2 개별 포트 인젝터들의 비대칭적 바이어스를 가지는, 상기 제2 가스를 흘려주는 단계;를 포함하며, 상기 기판을 가로질러 상기 제1 가스 및 상기 제2 가스의 실질적으로 균일한 분포가 얻어지며, 그리고 제1 막을 형성하기 위해 상기 기판 상에서 상기 제1 가스와 상기 제2 가스 사이에 반응이 일어나는 것을 특징으로 한다.
종래 기술을 넘어 달성된 본 발명 및 장점들을 요약할 목적으로, 본 발명의 일정한 목적 및 장점들이 본 개시물에 기술된다. 물론, 모든 이러한 목적들 또는 장점들이 본 발명의 어떠한 특정한 실시예에 따라 반드시 달성되어야 하는 것은 아니라고 이해될 것이다. 따라서, 예를 들어, 통상의 기술자는 본 발명은 여기에서 교시되거나 제시될 수 있는 것과 다른 목적들 또는 장점들을 반드시 달성함이 없이 여기에서 교시된 바의 하나의 장점 또는 장점들의 그룹을 달성하거나 최적화하는 방식으로 구현되거나 수행되는 것으로 인식할 수 있을 것이다.
모든 이들 실시예들은 여기에 개시된 본 발명의 사상 내에 있도록 의도된다. 이들 그리고 다른 실시예들은 첨부하는 도면들을 참조하여 후속하는 일정한 실시예들에 대한 상세한 설명으로부터 통상의 기술자에게 용이하게 명백하게 될 것이며, 본 발명은 개시된 어떠한 특정의 실시예(들)로 제한되는 것은 아니다.
여기에 개시된 본 발명의 이들 및 다른 특징들, 태양들 그리고 장점들이 일정한 실시예들의 도면들을 참조하여 기술되며, 이것은 본 발명을 설명하기 위해 의도되지만 본 발명을 제한하는 것은 아니다.
상기 특허 또는 출원 파일은 칼라로 만들어진 적어도 하나의 도면을 포함한다. 칼라 도면(들)을 갖는 이런 특허 또는 특허 출원 공개의 복사본들은 필요한 요금의 청구 및 납부로 특허청에 의해 제공될 것이다.
도 1은 본 발명의 적어도 하나의 실시예에 따른 가스 인젝션 시스템을 나타낸다.
도 2는 본 발명의 적어도 하나의 실시예에 따른 두께 그래프를 나타낸다.
도 3은 본 발명의 적어도 하나의 실시예에 따른 조성 그래프를 나타낸다.
상기 도면들에서 구성 요소들은 단순화 및 명료화를 위해 도시되었으며, 반드시 축적화될 필요가 있는 것은 아니라고 인식될 것이다. 예를 들어, 상기 도면들에서 상기 구성요소들의 일부의 치수들은 본 개시물의 도시된 실시예들에 대한 이해를 향상시키는데 도움이 되도록 다른 구성요소들에 비하여 과장될 수도 있다.
상기 특허 또는 출원 파일은 칼라로 만들어진 적어도 하나의 도면을 포함한다. 칼라 도면(들)을 갖는 이런 특허 또는 특허 출원 공개의 복사본들은 필요한 요금의 청구 및 납부로 특허청에 의해 제공될 것이다.
도 1은 본 발명의 적어도 하나의 실시예에 따른 가스 인젝션 시스템을 나타낸다.
도 2는 본 발명의 적어도 하나의 실시예에 따른 두께 그래프를 나타낸다.
도 3은 본 발명의 적어도 하나의 실시예에 따른 조성 그래프를 나타낸다.
상기 도면들에서 구성 요소들은 단순화 및 명료화를 위해 도시되었으며, 반드시 축적화될 필요가 있는 것은 아니라고 인식될 것이다. 예를 들어, 상기 도면들에서 상기 구성요소들의 일부의 치수들은 본 개시물의 도시된 실시예들에 대한 이해를 향상시키는데 도움이 되도록 다른 구성요소들에 비하여 과장될 수도 있다.
비록 어느 정도의 실시예들 및 예시들이 아래에 개시되어 있지만, 본 발명은 본 발명의 특별히 개시된 실시예들 및/또는 사용들 그리고 명백한 수정들 및 그들의 균등물을 넘어 연장된다는 것은 통상의 기술자에게 이해될 것이다. 따라서, 개시된 본 발명의 범위는 아래에 기술된 특별히 개시된 실시예들로 제한되어서는 안되는 것으로 의도된다.
본 발명의 실시예들은 교차류 반응기에서 기판 상에 더욱 더 균일한 막을 생성하는 것을 지향한다. 기판의 중심과 가장자리 사이에서의 균일도의 이슈들은 예를 들어, Si:P, SiC:P, Si:B, SiGe:C, SiGe:P, Ge:P, Ge:B, GeSn, GeSN:B, GeSn:P, 및 SiGeSn과 같은 다중 성분 그룹 IV 에피택셜층들의 퇴적에서 공통적이다. 본 발명의 실시예들은 이들 다중 성분 그룹 IV 에피택셜층들의 형성을 지향하며, 그리고 원소 막들(예를 들어, Si, Ge), 2원소 막들(예를 들어, Si1 - xCx, SiGe, GeSn, SiSn), 3원소 막들(예를 들어, SiGeC 및 SiGeSn), 및 4원소 막들(예를 들어, SiGeSnC 및 SiGeCP)에 바로 적용될 수 있다. 이들 막들은 도핑(p-형 또는 n-형)되거나 또는 도핑되지 않을 수 있다. 본 발명의 실시예들은 상기 기판을 가로질러 균일한 화학적 농도 뿐만 아니라 상기 막의 균일한 두께를 생성시키는 것을 지향한다.
도 1은 본 발명의 적어도 하나의 실시예에 따른 반응 시스템(10)을 나타낸다. 상기 반응 시스템(10)은 ASM 인터네셔널 N.V.로부터의 인트리피드(Intrepid)와 같은 에피택시 퇴적 툴일 수 있다. 상기 반응 시스템(10)의 예시가 ASM IP 홀딩 B.V.로 양도된 미국 특허 출원번호 제14/218,690호에 개시되어 있을 수 있으며, 이것은 참조로서 여기에 통합된다.
상기 반응 시스템(10)은 제1 다중-포트 인젝터(MPI)(100) 및 제2 다중-포트 인젝터(MPI)(200)를 포함할 수 있다. 상기 제1 MPI(100)는 복수 개의 제1 개별 인젝션 포트들(101-105)을 포함할 수 있으며, 반면에 상기 제2 MPI(200)는 복수 개의 제2 개별 인젝터 포트들(201-205)을 포함할 수 있다. 상기 개별 인젝터 포트들(101-105) 및 개별 인젝터 포트들(201-205)은 예를 들어, Swagelok®에 의해 제작된 BMW 시리즈 미터링 밸브(metering valve) 및 HanBay Inc에 의해 제작된 무브러시(brushless) DC 모터를 포함할 수 있다. 부가적으로, 인젝터 포트들은 Horoba 또는 MKS 인스트루먼트들에 의해 제작된 질량 흐름 제어기들(MFCs)에 의해 제어될 수 있다. 상기 제1 MPI(100) 및 제2 MPI(200)은 근접한 공간 관계 또는 공간적으로 분리되어 배치될 수 있다.
상기 반응 시스템(10) 내에서, 기판(120)이 (도시된 바와 같이)반시계방향 또는 시계방향 방식 중의 어느 하나로 회전될 수 있다. 상기 시계방향 또는 반시계방향 회전이 5 rpm 내지 50 rpm, 또는 바람직하게는 10 rpm 및 40 rpm 사이의 속도로 일어날 수 있다. 부가적인 MPI 및 개별 인젝터 포트들이 상기 기판(120) 상으로 제2 가스의 주입을 허용할 수 있도록 동일한 반응 챔버 내에 배치될 수 있다.
다중-성분 그룹 IV 에피택셜층들의 형성을 위해, 다중 가스들의 흐름을 필요로 할 수 있다. 제1 가스의 흐름은 예를 들어, 디클로로실란(DCS), 실란(SiH4), 디실란(Si2H6), 트리실란(Si3H8), 트리클로로실란(TCS)와 같은 실리콘 소오스일 수 있다. 제2 가스의 흐름은 예를 들어, 도펀트(dopant) 또는 합금 전구체 가스일 수 있다. 도펀트 또는 합금 전구체 가스의 예시는 다음 중의 적어도 하나를 포함할 수 있다: 포스핀(PH3), 저메인(GeH4), 디저메인(Ge2H6), 디보란(B2H6), 메탄(CH4), 염화 주석(SnCl4), 또는 모노-메틸실란(MMS). 상기 도펀트 또는 합금 전구체 가스는 n-형 또는 p-형 도펀트들을 포함할 수 있다. 부가적으로, 염산(HCl), 수소(H2), 또는 질소(N2)가 제1 가스 또는 제2 가스 중의 어느 하나가 선택성 및 희석 목적들을 위해 부가될 수 있다. 가스 흐름들은 원하는 공정 조율성(process tunability)에 따라 대칭적 또는 비대칭적일 수 있다.
상기 중심 대 가장자리 균일성 이슈들을 방지하기 위해, 본 발명의 적어도 하나의 실시예는 상기 개별 인젝터 포트들(101-105)의 비대칭적 바이어싱에 관련될 수 있다. 상기 개별 인젝터 포트들의 비대칭적 바이어싱은 상기 개별 인젝터 포트들(101-105)을 위한 상이한 흐름 속도(flow rate)들을 허용하는 것을 수반할 수 있다. 예를 들어, 상기 개별 인젝터 포트들(101-102)은 도펀트 가스의 흐름을 허용하도록 구성될 수 있으며, 반면에 상기 다른 개별 인젝터 포트들(103-105)은 전혀 가스가 흐르지 않도록 구성될 수 있다. 상기 개별 인젝터 포트들(101-105)을 통한 가스의 흐름은 상기 개별 인젝터 포트들(101-105)을 위한 밸브 상에 복수 회의 회전에 의해 다양해 질 수 있다. 부가하여, 인젝터 포트들은 Horoba 또는 MKS 인스트루먼트들에 의해 제작된 질량 흐름 제어기(MFC)들에 의해 제어될 수 있다.
소프트웨어 프로그램이 상기 개별 인젝터 포트들(101-105)을 통해 상기 흐름을 제어하기 위해 구성될 수 있다. 상기 소프트웨어 프로그램은 상기 개별 인젝터 포트들(101-105)이 개방되는 정도뿐만 아니라 상기 개별 인젝터 포트들(101-105)이 얼마나 오랫동안 개방되는 지를 명령할 수 있다.
본 발명의 적어도 하나의 실시예에 따라서, 도핑 막(예를 들어, Si:P 막)이 형성될 수 있다. 그렇게 하기 위해, 상기 제1 MPI(100)는 기판 상으로 디클로로실란(DCS)을 흘려줄 수 있다. 상기 흐름은 1 torr와 760 torr 사이, 바람직하게는 100 torr와 500 torr 사이 범위의 반응기 압력에서 일어날 수 있다. 상기 흐름은 300℃와 1100℃ 사이, 바람직하게는 600℃와 800℃ 사이 범위의 반응기 온도에서 일어날 수 있다. 상기 흐름은 원하는 두께, 성장율, 및 막 두께에 의존하는 지속시간을 가질 수 있다. 적어도 하나의 실시예에 따라서, 상기 개별 인젝터 포트들(101-102)이 상기 DCS를 흘려줄 수 있지만, 반면에 상기 다른 개별 인젝터 포트들(103-105)는 어떠한 DCS도 흘려주지 않도록 상기 개별 인젝터 포트들의 비대칭적 바이어싱이 일어날 수 있다. 적어도 하나의 실시예에 따라서, 상기 개별 인젝터 포트들(101, 102 및 105)는 가스를 흘려주지 않지만, 반면에 상기 개별 인젝터 포트들(103 및 104)는 가스를 흘려줄 수 있도록, 또는 상기 개별 인젝터 포트들(101, 105)는 가스를 흘려주지 않지만 상기 개별 인젝터 포트들(102, 103, 및 104)은 가스를 흘려줄 수 있도록 상기 개별 인젝터 포트들의 비대칭적 바이어싱이 일어날 수 있다.
이어서 상기 제2 MPI(200)는 상기 기판 상으로 포스핀을 흘려줄 수 있다. 상기 흐름은 1 torr와 760 torr 사이, 바람직하게는 100 torr와 500 torr 사이 범위의 반응기 압력에서 일어날 수 있다. 상기 흐름은 300℃와 1100℃ 사이, 바람직하게는 600℃와 800℃ 사이 범위의 반응기 온도에서 일어날 수 있다. 상기 흐름은 원하는 두께, 성장율, 및 막 두께에 의존하는 지속시간을 가질 수 있다. 적어도 하나의 실시예에 따라서, 상기 개별 인젝터 포트들(201-202)이 상기 포스핀을 흘려줄 수 있지만, 반면에 상기 다른 개별 인젝터 포트들(203-205)는 어떠한 포스핀도 흘려주지 않도록 상기 개별 인젝터 포트들의 비대칭적 바이어싱이 일어날 수 있다. 적어도 하나의 실시예에 따라서, 상기 개별 인젝터 포트들(201, 202 및 205)는 가스를 흘려주지 않지만, 반면에 상기 개별 인젝터 포트들(203 및 204)는 가스를 흘려줄 수 있도록, 또는 상기 개별 인젝터 포트들(201 및 205)는 가스를 흘려주지 않지만 상기 개별 인젝터 포트들(202, 203, 및 204)은 가스를 흘려줄 수 있도록 상기 개별 인젝터 포트들의 비대칭적 바이어싱이 일어날 수 있다.
상기 비대칭적 바이어싱은 상기 기판에 적용된 포스핀의 더욱 균일한 분포를 나타낼 수 있다. 상기 비대칭적 바이어싱은 상기 공정에 대하여 개선된 조율성(tunability)을 허용할 수 있으며, 따라서 퇴적된 상기 막들에서 융통성(versatility)을 허용할 수 있다. 도 2는 비대칭적 흐름 구성들을 사용하여 상기 웨이퍼의 중심으로부터의 위치의 함수로써 두께를 도시한 결과들 세트를 나타낸다. 상기 그래프 상에서 상이한 선들은 상이한 비대칭적 조건들을 나타낸다. 상기 비대칭적 바이어싱은 프론 프로파일(frown profile)(조건 B에서 보여지는 바와 같이)로부터 스마일 프로파일(smile profile)(조건 A에서 보여지는 바와 같이)로 조정된 두께 프로파일을 유도할 수 있으며, 따라서 두께에 대한 넓은 범위의 지속성을 제공할 수 있다.
도 3은 비대칭적 흐름 구성들을 사용하여 상기 웨이퍼의 중심으로부터의 위치의 함수로써 조성(composition)을 나타내는 결과들의 세트를 보여준다. 도 2와 유사하게, 상기 그래프에서 상이한 선들은 상이한 비대칭적 조건들을 나타낸다. 상기 비대칭적 바이어싱은 프론 프로파일(조건 E에서 보여지는 바와 같이)로부터 스마일 프로파일(조건 D 및 F에서 보여지는 바와 같이)로 조정된 포스포러스 조성 프로파일을 유도할 수 있으며, 따라서 농도에 대한 넓은 범위의 지속성을 제공할 수 있다.
본 발명의 적어도 하나의 실시예에 따라서, 상기 반응 시스템(10)은 다중-층 막 스택들을 형성하기 위해 사용될 수 있으며, 이것은 실리콘(Si) 및 실리콘 저머늄(SiGe)의 교대하는 층들을 포함할 수 있다. 이들 막들은 도핑되지 않을 수 있다.
이들 막 스택들을 형성하기 위해, 상기 제1 MPI(100)는 실리콘 소오스(예를 들어, 디클로로실란(DCS) 또는 실란) 및 염산(HCl)을 흘려주도록 구성될 수 있다. 상기 흐름은 1 torr와 200 torr 사이, 바람직하게는 5 torr와 60 torr 사이 범위의 반응기 압력에서 일어날 수 있다. 상기 흐름은 200℃와 1000℃ 사이, 바람직하게는 300℃와 900℃ 사이 범위의 반응기 온도에서 일어날 수 있다. 상기 흐름은 상기 층의 원하는 조성 및 두께에 의존하는 지속시간을 가질 수 있다.
개별 인젝터 포트들(101-102)이 상기 DCS를 흘려줄 수 있지만, 반면에 상기 다른 개별 인젝터 포트들(103-105)는 어떠한 DCS도 흘려주지 않도록 상기 개별 인젝터 포트들의 비대칭적 바이어싱이 일어날 수 있다. 다른 비대칭적 바이어싱 조건들이 원하는 프로파일에 의존하여 가능할 수 있다. 상기 제1 다중-포트 인젝터(100)는 또한 HCl의 소오스에 연결될 수 있다. 상기 개별 인젝터 포트들(101-105)는 특정한 인젝터 포트들이 DCS를 흘려줄 수 있지만, 다른 것들은 HCl을 흘려줄 수 있도록 구성될 수 있다.
상기 제2 MPI(200)는 저머늄 소오스(예를 들어, 저메인(GeH4) 또는 디저메인을 흘려주도록 구성될 수 있다. 상기 흐름은 1 torr와 200 torr 사이, 바람직하게는 5 torr와 60 torr 사이 범위의 반응기 압력에서 일어날 수 있다. 상기 흐름은 200℃와 1000℃ 사이, 바람직하게는 300℃와 900℃ 사이 범위의 반응기 온도에서 일어날 수 있다. 상기 흐름은 상기 층의 원하는 조성 및 두께에 의존하는 지속시간을 가질 수 있다. 개별 인젝터 포트들(201-202)이 상기 GeH4를 흘려줄 수 있지만, 반면에 상기 다른 개별 인젝터 포트들(203-205)는 어떠한 GeH4도 흘려주지 않도록 상기 개별 인젝터 포트들의 비대칭적 바이어싱이 일어날 수 있다. 다른 비대칭적 바이어싱 조건들이 원하는 프로파일에 의존하여 가능할 수 있다.
본 발명의 적어도 하나의 실시예에 따라서, 상기 반응 시스템(10)은 다중-층 막 스택들을 형성하기 위해 사용될 수 있으며, 이것은 저머늄(Ge) 및 저머늄 틴(GeSn)의 교대하는 층들을 포함할 수 있다. 이들 막 스택들은 로직 소자들을 위한 스트레서들(stressors)과 같은 적용들에서 사용될 수 있다.
이들 막 스택들을 형성하기 위해, 상기 제1 MPI(100)는 주석 소오스(예를 들어, 주석 클로라이드(SnCl4) 또는 주석 하이드라이드) 및 염산(HCl)을 흘려주도록 구성될 수 있다. 상기 흐름은 1 torr와 760 torr 사이, 바람직하게는 500 torr와 760 torr 사이 범위의 반응기 압력에서 일어날 수 있다. 상기 흐름은 100℃와 800℃ 사이, 바람직하게는 150℃와 500℃ 사이 범위의 반응기 온도에서 일어날 수 있다. 상기 흐름은 상기 층의 원하는 조성 및 두께에 의존하는 지속시간을 가질 수 있다. 개별 인젝터 포트들(101-102)이 상기 주석 클로라이드를 흘려줄 수 있지만, 반면에 상기 다른 개별 인젝터 포트들(103-105)는 어떠한 주석 클로라이드도 흘려주지 않도록 상기 개별 인젝터 포트들의 비대칭적 바이어싱이 일어날 수 있다. 상기 제1 다중-포트 인젝터(100)는 또한 HCl의 소오스에 연결될 수 있다. 상기 개별 인젝터 포트들(101-105)는 특정한 인젝터 포트들이 주석 클로라이드를 흘려줄 수 있지만, 다른 것들은 HCl을 흘려줄 수 있도록 구성될 수 있다.
상기 제2 MPI(200)는 저머늄 소오스(예를 들어, 저메인(GeH4) 또는 디저메인을 흘려주도록 구성될 수 있다. 상기 흐름은 1 torr와 760 torr 사이, 바람직하게는 500 torr와 760 torr 사이 범위의 반응기 압력에서 일어날 수 있다. 상기 흐름은 100℃와 800℃ 사이, 바람직하게는 150℃와 500℃ 사이 범위의 반응기 온도에서 일어날 수 있다. 상기 흐름은 상기 층의 원하는 조성 및 두께에 의존하는 지속시간을 가질 수 있다. 개별 인젝터 포트들(201-202)이 상기 저메인을 흘려줄 수 있지만, 반면에 상기 다른 개별 인젝터 포트들(203-205)는 어떠한 저메인도 흘려주지 않도록 상기 개별 인젝터 포트들의 비대칭적 바이어싱이 일어날 수 있다.
여기에서 기술된 상기 구성들 및/또는 접근들은 사실상 예시적이라는 것, 그리고 다양한 변형들이 가능하기 때문에 이들 특정한 실시예들 또는 예시들은 제한적 의미로 고려되지 않는다는 것이라고 이해되어야 한다. 여기에 기술된 특정한 관례들 및 방법들은 많은 처리 계획들 중의 하나 이상을 나타낼 수 있다. 따라서, 설명된 다양한 행위들이 설명된 시퀀스로, 다른 시퀀스들로, 또는 생략된 일부 경우들로 수행될 수 있다.
본 개시물의 주제는 여기에 개시된 다양한 공정들, 시스템들, 그리고 구성들, 그리고 다른 피쳐들, 기능들 등등 및/또는 성질들의 모든 신규한 그리고 비자명한 조합들 및 서브 컴비네이션들, 뿐만 아니라 그들의 어떠한 그리고 모든 등가물들을 포함한다.
Claims (3)
- 기판 상에 균일 막을 형성하는 방법으로서,
처리되어야 할 기판을 보유하는, 반응 챔버를 제공하는 단계;
제1 가스 소오스로부터의 제1 가스를 상기 기판으로 제공하기 위한 복수의 제1 개별 포트 인젝터들을 포함하는 제1 다중 포트 인젝터 어셈블리를 제공하는 단계;
제2 가스 소오스로부터의 제2 가스를 상기 기판으로 제공하기 위한 복수의 제2 개별 포트 인젝터들을 포함하는 제2 다중 포트 인젝터 어셈블리를 제공하는 단계;
상기 제1 다중 포트 인젝터 어셈블리로 상기 기판 상으로 상기 제1 가스를 흘려주는 단계로서, 상기 제1 다중 포트 인젝터 어셈블리는 상기 복수의 제1 개별 포트 인젝터들의 비대칭적 바이어스를 가지는, 상기 제1 가스를 흘려주는 단계; 및
상기 제2 다중 포트 인젝터 어셈블리로 상기 기판 상으로 상기 제2 가스를 흘려주는 단계로서, 상기 제2 다중 포트 인젝터 어셈블리는 상기 복수의 제2 개별 포트 인젝터들의 비대칭적 바이어스를 가지는, 상기 제2 가스를 흘려주는 단계;를 포함하며,
상기 기판을 가로질러 상기 제1 가스 및 상기 제2 가스의 실질적으로 균일한 분포가 얻어지며, 그리고
제1 막을 형성하기 위해 상기 기판 상에서 상기 제1 가스와 상기 제2 가스 사이에 반응이 일어나는 것을 특징으로 하는 기판 상에 균일 막을 형성하는 방법. - 청구항 1에 있어서,
상기 제1 가스는 디클로로실란(DCS), 실란(SiH4), 디실란(Si2H6), 트리실란(Si3H8), 트리클로로실란(TCS), 염산(HCl), 수소(H2), 또는 질소(N2) 중의 적어도 하나를 포함하는 것을 특징으로 하는 기판 상에 균일한 막을 형성하는 방법. - 청구항 1에 있어서,
상기 제2 가스는 포스핀(PH3), 저메인(GeH4), 디저메인(Ge2H6), 디보란(B2H6), 메탄(CH4), 모노-메틸실란(MMS), 틴 클로라이드(SnCl4), 틴 하이드라이드, 염산(HCl), 수소(H2), 또는 질소(N2) 중의 적어도 하나를 포함하는 것을 특징으로 하는 기판 상에 균일한 막을 형성하는 방법.
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CN107227452B (zh) | 2020-12-01 |
CN107227452A (zh) | 2017-10-03 |
KR102456984B1 (ko) | 2022-10-20 |
US20180151358A1 (en) | 2018-05-31 |
KR20220147547A (ko) | 2022-11-03 |
TW201735122A (zh) | 2017-10-01 |
TWI717481B (zh) | 2021-02-01 |
KR102573371B1 (ko) | 2023-09-01 |
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