TW552718B - Thin film transistor and matrix display device - Google Patents
Thin film transistor and matrix display device Download PDFInfo
- Publication number
- TW552718B TW552718B TW091118538A TW91118538A TW552718B TW 552718 B TW552718 B TW 552718B TW 091118538 A TW091118538 A TW 091118538A TW 91118538 A TW91118538 A TW 91118538A TW 552718 B TW552718 B TW 552718B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating film
- semiconductor layer
- thin film
- film transistor
- transistor
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims abstract description 103
- 239000011159 matrix material Substances 0.000 title claims description 33
- 239000010408 film Substances 0.000 claims abstract description 212
- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 239000000463 material Substances 0.000 claims abstract description 67
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 54
- 239000011787 zinc oxide Substances 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 18
- 239000006104 solid solution Substances 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 7
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910004767 CaSn Inorganic materials 0.000 claims 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 claims 1
- 244000046052 Phaseolus vulgaris Species 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 15
- 239000001301 oxygen Substances 0.000 abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 230000007423 decrease Effects 0.000 abstract description 4
- 229910004205 SiNX Inorganic materials 0.000 abstract description 2
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- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
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- 239000002356 single layer Substances 0.000 description 5
- -1 zinc hafnium bismuth Chemical compound 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
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- 150000004767 nitrides Chemical class 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 241001674048 Phthiraptera Species 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
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- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
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- 238000003980 solgel method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910003334 KNbO3 Inorganic materials 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- 101100450085 Silene latifolia SlH4 gene Proteins 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- QHEDSQMUHIMDOL-UHFFFAOYSA-J hafnium(4+);tetrafluoride Chemical compound F[Hf](F)(F)F QHEDSQMUHIMDOL-UHFFFAOYSA-J 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 230000007954 hypoxia Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
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- 230000001590 oxidative effect Effects 0.000 description 1
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- 239000004033 plastic Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
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- 230000001568 sexual effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical group [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
Description
552718 ⑴ 玖、發明說明 … (發明說明應敘明：發明屬 .. 月所屬之技術領域、先前技術 ，、知方式及圖式簡單說明） 發明領域 本發明係有闕具有透明半導體 之矩陣顯示裝置者。 寻肤私晶體及使用其 液晶顯示裝置等矩陣顯示裝 、及久作衣置，、備排列成矩陣狀之像素 r:動電屋的切換元件。切換元件接通時 ’驅動電壓寫入像素内’切換元件斷開時不執行驅動電： 的^ t。作為此種切換元件而廣泛採用的薄膜電晶體（TFT) 通常係在半導體層上使用非晶矽。 由於非晶矽藉由光的照射而顯示導電性，因此薄膜電晶 體上需要設置防止切換特性降低用的通道遮光膜。遮光膜 的設置導致薄膜電晶體的製造步驟增加、像素開口率降低 等之製造成本提高及顯示性能降低。因此，為求解決此種 問題而提出使用無光電流之透明半導體材料的電晶體。 透明半導體材料如揭示於（文獻1)特開平5-25 17〇5號公報 ( 1 993年9月28曰公開）、（文獻2)特開平6-067 187號公報 (1994年3月11曰公開）、（文獻3)美國專利5, 744, 864號（專利 許可曰期：1998年4月28曰）等。 文獻1中揭示有：使用能帶寬在3 eV以上，載體濃度在1〇18 個cm·3以下的透光性半導體層，以消除遮光膜，提高開口 率。文獻2中揭示有：基於提高開口率及縮短製程之目的， 以共通的透明半導體薄膜形成液晶驅動用電晶體之源極部 、通道部及没極部 '與液晶驅動用電極的技術。此外’文 (2) (2)552718 發稱說嚷績頁 獻3中揭示有··一種為求換 尤9 - Λ, 于I β之刀俠兀件，而使用帶寬 在…）e以上之縮退半導體材料作為通道層。 :ι〇=广前之薄膜電晶體的Vg—id特性。該 rE=:::”TFT的製造中’係將藉由-般使用之 CVD法而成㈣SlNx(單層）作為閘極絕 化辞作為半導體材料。從圖1〇可知通道尺寸為l/w^ =_道長’ W表示通道寬)之-般液晶顯示器上使用 ，的TFT中可獲得與電場效應移動率(μΡΕ)為0 57 cnr/Vs之a-SlTFT相等的良好特性。 ~ 此外’獲得高品質半導體材料的方法 開平9·59〇87號公報（1997年 （文獻4Μ寸 八^ 牛J月4曰公開）、（文獻5)歐洲專利 公開公報㈣請^㈣⑷月^日公開）等。 文獻4中揭示有—種薄膜形成方法’其特徵為：為使成膜 材料的配向性提高，在玻璃其。 、 土板表面"又置包含與成膜材料 不同之材料的中間層之後，在其上形成成膜材料。此外， 文心中揭不有：在底層基板上使用晶格不整合性小的材料 ’形成接近單晶之高品質之半導體薄膜的方法。 今後，為求製造更高精細的顯示器，並為獲得更高開口 车而將TFT予以小型化’須進—步提高 οη/off比等）。 、利 + ^提高上述的TFT特性，須使形成通道之半導體材料的 —性提高’及降低半導體與問極絕緣膜之界面的缺陷等 級。因此須適切選擇其半導妒“ 料 ’、 材料與形成界面之絕緣膜材 (3) (3)552718
歸〜疋⑽不上述透明半導體材料之各文獻t記載之電晶 曰〜的構k並未通盤考慮絕緣膜對透明半導體材料之結 /的，:丨對界面狀恶乃至製出之FT之電晶體特性 的衫響等。此外，通道鱼形成 σο 、办成界面之閘極絕緣膜均係使用 Γ的絕緣性材料構成。尤其是前述之使用肌（單層）之絕 ，使用氧化辞之半導體層形成界面時，氧化辞中的氧 被叫奪取，導致界面附近的氧化辞結晶性降低。 料另外’高°σ:質薄膜形成方法_，就堆積形成薄膜的基板材 衝層進#提及形成於基板材料與薄膜之間的中間層及缓 〈疋此荨為形成接近單晶之薄 使用蔆m 〈潯膜用的方法，並非作為 使用厚膜作為電效型電晶體之半 而使用1 cb Μ P 版a可之閘極絕緣膜， 便用该中間層、緩衝層者。 薄It:；!技=未考慮有關將透明半導體材料應用於 、日日肢^，錯由選擇閘極絕緣膜以提高Τ{：τ特性。 發明概要 為求更廣範圍且有效地應用透明半導 裝置的切拖斧杜,, 了十之矩陣顯示 刀換疋件，本發明之目的，在提供一種罝 一 TFT^性之問極絕緣膜的薄膜電晶體及具 可提肉 裝置。 、稱，、之矩陣顯示 為求達成上述目的，本發明之薄膜電晶體包八 層，其係佶用气几w 3 :半導體
丁、使用乳化鋅、MgxZni.x〇、CdxZ 或是取得1價之價數之元素或摻雜㈣之氡化鋅二化録’
Cd\Zni-\0或氧化鎘；及閘極、絕緣膜，1ΜΖηι-χ〇 ”不昇有：第一絕 -10- (4)552718 褰簡劈績磊 化物以外的材料；及 前述半導體層夾著， 緣膜，其係使用形成閘極與界面之氧 第二絕緣膜，其係被該第一絕緣獏及 使用形成兩者與界面的氧化物。 上述構造之第二絕緣膜藉由使用氧化物，可良好地保持 與形成該第二絕緣膜與界面之半導體層的界面整合性。此 外’由於第—絕緣膜係使用氧化物以外的材料，因此， a-SlTFT製程等較低溫的溫度範圍内製出的薄膜電晶體可 比使用虱化物之第二絕緣膜提高絕緣性。 因而’藉由以不同之兩層絕緣膜射X閘極絕緣膜，可提 南形成弟二絕緣膜與界面之半導體層的結晶性 導體層與第二絕緣膜之界面的缺陷等級。此外’㈣= 化物構成第二絕緣獏，因 u此錯由弟一、纟巴緣膜的材料可抑制 辞等）中的氧被奪取。此外，可良好地保持 …，'弟二絕緣膜之界面附近的結晶 斷開區域之漏電流電平降低 h現 的薄膜電晶體。因此易 '门刀、特性良好 電晶體的高性能化。…現具有透明半導體膜之薄膜 為求達成上述目的，士 , 的本發明之其他薄膜電晶體包含：半 r層”其係使用氧化辞、^一〜或氧化 Μ:π取得1價之價數之元素或推雜有錄之氧化辞、 有' 广、cdxz〜〇或氧化録；及閘極絕緣膜，其係呈 其係使用形成閘極與界面之氧化物以二 體層^及弟—/絕緣膜，其係被該第一絕緣膜及前述半導 者且形成兩者與界面，使用包含KNbO;，KTa〇3 -11- 552718 (5) _說.績頁 ，BaTi03，CaSn03，CaZr〇3，CdSn03，SrHf〇3，SrSn03 ，SrTiO; ’ YSc〇3，CaHf〇3，MgCe〇3，SrCe〇3，BaCe〇3 ’ SrZr03 ’ BaZr〇3，UGa〇2，UGa〇22 混晶系（LlMx”)NaxKy) (GaNzAlz)〇2或此等氧化物中之至少兩種的固溶體。 上述構造之第二絕緣膜藉由使用氧化物，可良好地保持 與形成該第二絕緣膜與界面之半導體層的界面整合性。尤 其是上述氧化物及固溶體構成半導體層之氧化鋅等的晶格 不整合小，可極良好地保持界面整合性。此外，由於第一 絕緣膜使用氧化物以外的材料，因此，心SiTFT製程等較低 溫的溫度範圍内製出的薄膜電晶體可比使用氧化物之第二 絕緣膜提高絕緣性。 因而，藉由以不同之閘極絕緣膜的兩層絕緣膜構成，可 提咼形成第二絕緣膜與界面之半導體層的結晶性，並降低 半‘租層與第二絕緣膜之界面的缺陷等級。此外，因係以 上述氧化物構成第二絕緣膜，因此幾乎不發生因第二絕緣 獏的材料導致半導體層(氧化鋅等)中的氧被奪取。此外， 可良好地保持半導體層與第二絕緣膜之界面附近的結晶性 。如此可實現斷開區域之漏電流電平降低，且移動率高之 切換特性良好的薄膜電晶體。因此，容易實現具有透明半 導體膜之薄獏電晶體的高性能化。 •交錯型薄膜電晶體中不需要遮光膜時，在基板上形成有 ::及,極與半導體層。因❿，依基板之材料，可能與半 守：之晶格整合性不佺，導致薄獏電晶體的特性降低。因 |a由在使用上述氣化物或此等固溶體之底層上形成半導 -12 · (6) '^^552718 體層，與前述薄膜電晶體之第二絕緣膜同樣地，改善與半 辱體層的晶格整合性。II此，不論基板材料為何，均可防 止半導體層之特性的惡化’因此無須限定基板材料須為1 半導體層之晶格整合性良好的材料。 …Λ 、，本％明之矩陣顯示裝置具備配置成矩陣狀的切換元件， 亚^用上述任何一種薄膜電晶體作為前述切換元件。
藉由使用上述高性能之薄膜電晶體，提高矩陣顯干 之切換特性。因此可提供顯示品質佳的矩陣顯示裝置。衣置 本發明之其他目的、特徵及優點，從以下内容庫可充八 瞭解。此外’本發明之好處’從參照附圖之以下說明二 可明瞭。 兄Θ ?應 圖式之簡單說明 圖1係顯示本發明第一及第二 的構造剖面圖。 種貝把形恕之缚膜電 圖2⑷至圖2⑴係顯示上述薄膜電晶體 部分剖面圖。 圖3係顯示上述薄膜電晶體一種製造 晶體 之製造步驟的各 圖 範例的Vg— id特性
之薄膜電晶體一種製 之薄膜電晶體的構造 圖4係顯示本發明第二種實施形態 造範例的Vg — Id特性圖。 圖5係顯示本發明第三種實施形態 剖面圖。 圖6(a)至圖6(g)係顯 部分剖面圖。 不 述薄犋電晶體之製造步驟的各 -13 - 552718 ⑺ 圖7係顯不本發明繁r链鸯^ > - 一種μ施形態之薄膜電晶體一種製 造範例的V g — I d特性圖。 圖8係顯示本發明第四種每 悝m %形恕之矩陣顯示裝置之主 要部分的構造區塊圖。 圖9㈣示上述矩_示裝置之像素構造的電路圖。 圖Π)係顯示先前之薄膜電晶體—種製造範例_id特 性圖。 具體實施例描述 [第一種實施形態] — 參照圖1至圖3說明本發明第—種實施形態如下。 如圖1所示’本實施形態之薄膜電晶體i形成，於絕緣性 基板2上所形成之閘極3上’經由問極絕緣膜*堆疊有半導體 層5 ’在該半導體層5上的兩側形成有源極6與沒極7的反交 錯型構造。此外’該薄獏電晶體丨使用於矩陣顯示裝置時， 連接於汲極7之像素電極8形成於第二絕緣膜仆上。再者， ㈣膜電晶體1上形成有覆蓋半導體層5、源極6及汲極场 保護膜9。 透明之半導體層5係使用氧化鋅、MgxZn|.x〇、CdxZn|.xC) 或氧化鎘’或是取得丨價之價數之元素或摻雜有鎳之氧化鋅 、MgxZnkO、CdxZnNx〇或氧化鎘形成。 閘極絕緣膜4包含第_絕緣膜4a及第二絕緣膜仆。 第-絕緣膜4a堆疊於絕緣性基板2及問極3上，形成閑極3 與界面。$卜絕緣M4a係藉由氧化物以外之絕緣性良好 的材料，如SiNx(氮化矽）形成。 -14- (8) (8)552718 發獎說頃繽頁 弟〜絕緣暝4b以被第一絕緣膜仏與半導體層5失著的方 式形成於签 /r7 、罘一、纟巴緣膜4a上，形成第一絕緣膜4a及半導體芦5 兩者與灵； 曰 ’、1面。該第二絕緣膜4b係使用包含SiO,，Ta〇… αι2〇, , ΤιΠ λ · 2Ud 2，Mg〇，Ζγ02，stab— Ζγ〇2，Ce02，κ20，Li，〇 -Kb2〇，In2〇3 ’ La203 ’ Sc2〇3 ’ Y2〇3或此等氧化物 中 21 j ' ^ ^'兩種的固溶體形成。 一 ^外，第二絕緣膜仆亦可堆疊單層或數層自Ila至VneU^ 之氧化物（第一氧化物）、此等元素之混合物的氧化物 ^氧化物）、或包含此等氧化物（第一及第二氧化物）中之 至少兩種的固溶體。或是，第二絕緣膜扑亦可堆疊單層或 數層自lib至IVb族元素之氧化物（第三氧化物）、此等元素之 2合物的氧化物（第四氧化物）、或包含此等氧化物（第三及 第四氧化物）中之至少兩種的固溶體。 以>下，使用圖2(a)至圖2(f)之製造步驟圖說明如上述構成 之薄膜電晶體1的製造方法。 ΐ先，糟由濺射法，在絕緣性基板2上堆疊厚度為3〇〇 之鉅作為構成閘極3的閘極材料，在其上藉由光蝕刻步驟製 造特定形狀的光阻圖案。使用該光阻圖案，在閘極材料上 ，藉由四氟化碳+氧之氣體實施乾式蝕刻，形成圖案化成 該形狀之閘極3及連接其之閘極配線（無圖式）（圖2(a))。絕 緣性基板2係使用玻璃基板、石英、塑膠等’閘極材料除妲 之外使用鋁、鉻等。 其次，藉由P — CVD法堆疊400 nm之氮化矽膜，作為第一 絕緣膜4a(圖2(b))。此時之成膜條件係基板溫度為33〇艺， -15 - (9)552718 氣壓為1.5 T0rr，^ 、 犯（^射能）為1.5 kW，氣體流量為 SlH4/NH3/N2=15G/75G/細Gsccm。 — 氮化矽膜之成膜方法，除此之外亦可使用濺射法 寺0 再者’如藉由賤射法堆疊10nm之氧化石夕薄膜作為第二與 緣膜4b(圖2(C)) °氧化石夕薄膜成膜時之基板溫度為200t， 氣體流量為氧/ _ = 4 〇 β 虱 一 40/80 sccm，以壓力 〇 7 pa，Rp^4 kv 成膜。
而俊I日由射法堆疊200 nm之半導體材㈣氧化辞， 藉由光㈣*濕式_，在閘極3的上方加工成島狀（圖 (、)）氧化鋅成膜的方法除此之外，亦可使用脈衝雷射堆 積法、液態析出法、溶膠凝膠法等任何一種方法。 、薩二藉由濺射法形成200 nm的鈕膜，藉由光蝕刻及使 氟化妷+氧之氣體之乾式蝕刻，形成源極6及汲極7。 此外，错*錢射法形成氧化銦錫（ιτ〇, _咖丁⑺ 〇叫膜，以連接於汲極7的方式，在第二絕緣獏4b上，藉
/執仃光蝕刻及使用蝕刻液(鹽酸+硝酸)之濕式蝕刻，以 形成像素電極8(圖2(e))。 =後藉由P CVD法，形成3〇〇 nm的氮化石夕薄膜，並藉 由光钱刻及乾式飯刻除去該氮化石夕膜之像素電極8上與端 子-”干墊(無圖式)上的部分，以形成保護膜9，完成薄膜電 晶體1(圖2(f))。 圖3顯示如上述製出之薄膜電晶體丨的化—比特性。此外 ，比較例之圖丨〇顯示先前薄膜電晶體之Vg-Id待性。此等 -16 - 552718 (ίο) 繁劈說®繽頁 薄膜電晶體的通道尺寸為L/W=5/20 μιη。 先前之薄膜電晶體之閘極絕緣膜（氮化矽）與半導體層（氧 化鋅）的界面，因閘極絕緣膜取得半導體層之氧的一部分而 形成氧化物層，因此應係半導體層引起缺氧。因而如圖ι〇 所示，该薄膜電晶體之電效移動率（μΡΕ)小，為〇 52咖2/%。 反之’本薄膜電晶體1如圖1所示’因形成半導體層5(氧 化鋅）與界面之第二絕緣膜4b係氧化物，因此不發生氧化鋅
的缺氧，特性提高。具體而言，從圖3可知，該薄膜電晶體 1的電效移動率提高至1.3 cm2/Vs。 此外，由於第二絕緣膜4b(如氧化矽）薄至丨〇nm，因此絕 緣性不致太高。但因第一絕緣膜4a(氮切）具有高絕緣: ’因此抑制閘極3只有低的漏電流，可獲得良好的特性。
口而本貝知形態之薄膜電晶體丨具備閘極絕緣膜4 ,其係 有，’巴彖性问的第一絕緣膜4a、與使用半導體層5(氣化 鋅等)中之氧不致被奪取之氧化物的第二絕緣膜讣。藉此， 可使閘極絕緣膜4之絕緣性及閘極絕緣膜4與半導體層$之 ，面特性提高。因而可實現斷開區域之漏電流電平低θ，且 移動率高之切換特性良好的薄膜電晶體i。 作為第一絕緣膜4a之材料而使用的氮化矽，與一般之 化物絕緣膜比較，即使以低溫（約3QQt)U㈣示高紹 性。此外，氮切之透濕性低，可保持裝置的可靠性。 ^ ’氮切與作為第：絕緣膜4b之材料而使用的氧化石夕 較，可抑制造成裝置特性降低的擴散離子 用氮化料為第—絕“ 、.巴緣肤4a的材料，可獲得比使用包含 -17- (11))52718 化矽之單層問極絕緣膜之薄膜 的薄膜電晶體。 [第二種實施形態] 電晶體更高性能且高可性度 參照圖i及圖4說明第二種實施形態如下。本實施形態中. ’具有與前述第-種實施形態之構成要素相同功能的構成 要素註記相同符號，並省略其說明。 本貫施形態之薄膜電晶體丨係形成圖丨顯示的構造，唯形 成半導體層5及閘極絕緣膜4之第二絕緣膜讣用的材料與帛 -種實施形態的薄膜電晶體i不同。 · 半導體層5之材料係使用氧化鋅、Μ§χΖηι·\〇、cdxZnh〇 或軋化編’或是取得1價之價數之元素或摻雜有錄之氧化辞 ' MgxZnuO、CdxZn^O或氧化鎘。此外第二絕緣膜仆之 材料係使用包含KNbOs，KTa〇3, BaTl〇3, eaSn()3, eaZfQ3 ’ CdSn〇3，SrHf〇3，SrSn〇3，SrTl〇3，YSc〇3，CaHf〇3，
MgCe03，SrCe〇3，BaCe〇3，SrZr〇3，驗…，UGa〇2，
LlGa〇2之混晶系（Ll丨·UwNbKyXGakAUOwt此等氧化物 中之至少兩種的固溶體。 修 使用圖2(a)至圖2(f)之製造步驟圖，說明如上述構成之薄 膜電晶體1的製造方法如下。 就絕緣性基板2上形成閘極3及第一絕緣膜4a之步驟（圖 · 2U)及（b)) ’與第一種實施形態中說明之步驟相同。
繼續，於形成第二絕緣膜4b之步驟（圖2(c))中，如以脈衝 田射堆積法堆® 10 nm之CaZr〇3的薄膜，作為氧化鋅等與晶 格不整合性小的材料。此時之成膜條件為基板溫度為30(TC -18 - 552718 ，乳壞境為10 mT〇rr，雷射能為15〇 mV , 5 Hz。 再者’於形成半導體層5之步驟（圖2(d))中，於第二絕緣 膜扣上，以脈衝雷射堆積法堆疊200 nm之如包含氧化鋅之 透明半‘體膜。此時之成膜條件為基板溫度為300°C，氧環 境為 100 mT〇rr，雷射能為 100 mV，10 Hz。 以下繼續於自源極6及汲極7至形成保護膜9的步驟（圖 2⑷及圖2(f))，與前述薄膜電晶體i中說明的步驟相同。 圖4顯示如上述製出之薄膜電晶體1的Vg—Id特性。 上述薄膜電晶體1，作為形成半導體層5(氧化辞）與界面之 底層膜之第二絕緣膜4b的晶格間距離接近氧化鋅，氧化鋅 的結晶性提高。因而本薄膜電晶體丨之電效移動率提高 至 1.8 cm2/Vs 〇 〇 此外，因堆疊30 nm的第二絕緣膜4b，目此電效移動率提 高至 3.3 cm2/Vs。 此時，第二絕緣膜4b之前述各材料具有鈣鈦礦構造，討 論⑴υ面上晶格間隔的不整合。從氧化鋅及前述各個晶格
常數計算結果，前述各材料之上述不整合最大約達以，可 知此等材料之氧化辞與晶格常數的整合性高。因此’使用 此種材料所形成之第二絕緣膜4b上形成氧化鋅膜作為半導 體層满，半導體層5的結晶性提高，因此可形成高品質： 半導體薄膜。此外，製出之薄膜電晶體i具有優異特性，可 實現移動率的提高。 ' 藉此’可將薄膜電晶⑸予以小型化成適於矩陣顯示裝 之像素用的切換元件。此外，如後述 亦可用作在平面上 •19- 552718 ⑴） 發鸮說稱績貢 排列成矩陣狀之薄膜電晶體1的驅動用元件，此等可與俨 内之切換元件同時製造。 ’、 [第三種實施形態] 參照圖5至圖7說明第三種實施形態如下。本實施形態中 ’具有舆前述第一種實施形態之構成要素相同功能的構成 要素註記相同符號，並省略其說明。 如圖）所示，本實施形態之薄膜電晶體Π係形成交錯型構 造，其係在絕緣性基板2上形成有閘極6、源極7及連接此等 的半導體層5，並經由閘極絕緣膜4，在其上形成有間極3 。該薄膜電晶體11須注意的是，閘極6、源極7及半導體層5 並非直接形成於絕緣性基板2上’而係經由絕緣性基板2曰上 所形成的底層絕緣膜12(底層）形成於其上。 上述底層絕緣膜12係使用包含KNb〇3，KTa〇3，BaTi(^， GSn〇3，CaZr〇3，CdSn〇3，SrHf〇3，SrSn〇3，5爪〇3，YSc〇3 ’ CaHf〇3 , MgCe〇3，SrCe〇3，BaCe〇3，SrZr〇3，8仏〇飞， ，LiGa〇2t 混晶系（Ui (xy)NMCy)(Gai zAiz)〇2 或此 等氧化物中之至少兩種的固溶體而形成。 此外，該薄膜電晶體1使用於矩陣顯示裝置時，連接於汲 極7之像素電極8係形成於底層絕緣膜12。再者，該薄膜電 晶體1上形成有覆蓋閘極3、閘極絕緣膜4、半導體層5、源 極6及汲極7的保護膜9。 以下使用圖6(a)至圖6(g)之製造步驟圖說明如上述構成 之薄膜電晶體1 1的製造方法。 首先，於纟巴緣性基板2上，藉由濺射法堆疊1〇 nmtCaHf〇3 -20- 552718 (14) 漦_說稱續j 作為構成底層纟巴緣膜12的材料（圖6 (a))。此時的成膜條件為 胍度為200C，氣體流量為氧/氬= 40/60sccm，壓力為〇7Pa。 其次，藉由濺射法在上述底層絕緣膜12上形成1〇(} nm的 氧化姻锡（ITO ; Indium Tin Oxide)膜。該ITO膜上進行光钱 刻及使用钱刻液（鹽酸+硝酸）的濕式蝕刻，同時形成源極6 、汲極7及像素電極8(圖6(b))。 繼續藉由賤射法堆疊200 nm之作為半導體材料之包含氧 化鋅的氧化辞膜5 1 (圖6(c))。此時的成膜條件為基板溫度為 280(：’氣體流量為氧/氬二40/8〇5(：(：111，壓力為〇7?&。妒 成氧化鋅膜之方法，除此之外亦可使用脈衝雷射堆積法、 液態析出法、溶膠凝膠法等任何一種方法。 再者，藉由濺射法堆疊10 nm之構成第二絕緣膜4b的氧化 矽薄膜41(圖6(d))。氧化矽薄膜41之成膜條件為基板溫度為 200 C ’氣體流量為氧/氬=40/60 seem，壓力為〇 7 pa。 而後，藉由P - CVD法堆疊400 nm之構成第一絕緣犋乜的 氮化矽膜42’並且以濺射法在其上形成3〇〇nm之構成閘極3 的妲獏3 1(圖6(e))。 亂化矽膜42的成膜條件為基板溫度為33(Γ(：，氣壓為！ $ T〇ir ’ RF能（濺射能）為1 5 kw，氣體流量為…二 150/750/2000 seem 〇 另外氮化矽膜42的成膜方法，除此之外亦可採用濺射法 等。 而後，以光蝕刻在钽膜3 1上形成閘圖案的光阻，將該釦 膜31、氮化矽膜42、氧化矽膜41、與氧化鋅膜51予以圖X案2 -21 - (15) (15)552718 縈鸮說翳續 Μ 化，形成閘極3、閘極絕緣膜4、與半導體 時，係籍由使用四氟化碳+氧之氣體 Θ 。此 芬备π a ▲ ?己式钱刻將I旦膜3 1 虱匕夕膜42予以圖案化。繼續以氟酸+ 、 式#刻氧化石夕膜41及氧化辞膜51。 4的處合液濕 最後’藉由P-CVD法形成3〇〇nm的氮化石夕薄膜 ㈣及乾式㈣除去該氮化㈣膜之像素電極8上二= 部焊塾（無圖式）上之部分，以形成保護膜9,完^曰 體11(圖6(g))。 、私日日 交錯型之薄膜電晶體"，其半導體層5(氧化辞）係形成於 底層絕緣膜12上。該底層絕緣膜12係與前述第二種實施步 態中用作第二絕緣膜4b材料之氧化鋅晶格整合性良好的氧 化物，因此以半導體層5與底層絕緣膜丨2所形成之界面的= 性提高。因此即使交錯型之薄膜電晶體u ’亦可使半導體 層5的結晶性提高。 & 此外，藉i設置底層絕緣膜12,、絕緣性基板2之材料即使 為與半導體層5之晶格整合性不良的材料，仍可防止半導體 層）的特性惡化。因此基板材料並不限定為與半導體層5晶 格整合性良好的材料。 圖7顯示如上述製出之薄膜電晶體丨丨的Vg— Μ特性。該薄 膜電晶體11的通道尺寸為L/W = 5/20 μηι。該薄膜電晶體j i 可獲得1·1 cm"Vs的向電效移動率。 以上各實施形態之薄膜電晶體1 · π顯示移動率、〇n/〇ff 比等良好的切換特性，可獲得與目前廣泛使用於液晶顯示 态之a-SiTFT相荨以上的性能。此外，不論形成氧化鋅與界 •22· 552718 面之絶緣膜（第二絕緣膜4b或底層絕緣膜1 2)的成膜條件為 何，均如第二種實施形態之最後所述，可獲得高移動率 (數cm2/Vs)。藉此，可將薄膜電晶體i ·丨丨予以小型化，作 為液晶顯示器的切換元件。 另外，前述第一至三種實施形態，於薄膜電晶體丨· u之 製造步驟的說明（圖2(a)至圖2(f)及圖6(a)至圖6(§))中，係以 使用特定材料為例作說明。但是即使是使用各實施形態列 舉之各材料製出之薄膜電晶體1 · Π，仍與藉由上述之特定 材料製出之薄膜電晶體1 ·丨丨同樣地性能提高。 [第四種實施形態] 芩照圖8及圖9說明第四種實施形態如下。本實施形態中 ，具有與前述第一至三種實施形態之構成要素相同功能的 構成要素s主έ己相同符號，並省略其說明。 如圖8所不，本實施形態之矩陣顯示裝置係液晶顯示器， 其具備·像素陣列2 1、源極驅動器22、閘極驅動器23、控 制電路2 4、及電源電路2 5。 像素陣列2 1、源極驅動器22及閘極驅動器23形成於基板 26上。基板26係由玻璃等具有絕緣性且透光性的材料所形成。 像素陣列21具有··源極線讣…、閘極線(]^·.·、及像素27…。 像素陣列21係以多數條閘極線GLj，+ i…與多數條源 極線SL,，SLi + i…交叉的狀態配置，在被鄰接之兩條閘極線 GL · GL與鄰接之兩條源極線包圍的部分設有像素 (圖中以PIX表示）27。因而像素27···係在像素陣列21内排列 成矩陣狀，每一列分配有一條源極線SL，每一行分配有一 -23 - (17) (17) 發獎說嘛頁 條閘極線GL。 件=:器之各像素陣列21，如圖9所示，係藉由切換元 吃日❿了與具有液晶電容&的像素電 而言，主動矩陣型液晶顯示 ^ 定，呈右溆、广日& 的之怵’丁、，為使顯示穩 Γ / 曰曰電容Cl並行附加的輔助電容CS。輔助電容 sir、用於將液晶電容q及 曰雕兩亡 日日T之漏电以、電晶體τ之閘 :·源極間電容、像素電極·信號線間電容等寄生電容迭 成像素電位之變動、及液晶電容⑽二 影響抑制在最小限度。 m知寺的 電，之_連接於問極線叫。此外，液晶電容。及 # MCS之-方電極經由電晶體丁之没極及源極，連接於 源極線S L丨。液晶雷交「沾 。夺CL的另一方電極夾著液晶單元連接於 相對電極，輔助電容Cs的另—方電極連接於全部像素共用 ，..、圖式的共用电極線（Cs on coinmo 鄰接之閘極線GL(CsQnGate構造時）。 μ接於 ―多數條閘極線GLj，GLj+l...連接於閘極驅動器23，多數條 貢料信號線SL,，SL|M...連接於源極驅動器22。此外，問極 驅動器23及源極驅動器22分別藉由不同的電源m VGl與電源電壓VSH · vSL驅動。 源極驅動器22依據來自控制電路24之同步信號cks及啟 動脈衝SPS柚樣控制電路24供給之影像信號附，並輸出至 連接於各列像素的源極線SL|’ SW|...。閘極驅動器23依據 來自控制電路24之同步信號CKG · GPS及啟動脈衝SPG產生 供給至連接於各行像素27...之閘極線叫，叫的問極 -24 - 552718 (18) 發嗎說劈繽頁 信號。 電源電路25係產生電源電壓vSH · VSL · VGH · Vgl、接地 私位COM及電壓γΒΒ的電路。電源電壓vSH · vSL係各個電 平不同的電壓，並供給至源極驅動器22。電源電壓Vgh ·
Vgl係各個電平不同的電壓，並供給至閘極驅動器23。接地 位C Ο Μ供給至設於基板2 6之無圖式的共用電極線上。 此吟’上述電晶體τ係前述第一至三種實施形態的薄膜電 ' 11 (參知圖1及圖5)。如前所述，由於薄膜電晶體1 • 11移動率及性能高，因此在驅動像素27的電晶體τ上使用 5亥薄膜電晶體1 · 11，可提供工作速度及顯示品質佳的矩陣 顯示裝置。 、/、疋構成工作頻率較低之閘極驅動器23電路元件中 ’以電晶體構成之電路中的各電晶體為前述的薄獏電晶體^ • 11。其可藉由薄膜電晶體丨· n具有高性能（高移動 而達成。 ’ 二卜’藉由以相同的薄膜電晶體卜11構成像素27之電晶 ::、驅動電路之電晶體’可在同一個基板26上使用相同的 1王同日寸製造此等電晶體。&外’由於矩陣顯示裝置的制 〜：驟減少：因此可促使矩陣顯示裝置低成本化。’ 二=藉由同樣使用薄膜電晶體…1作為像素” 及顯示:二：動電路用之電晶體’可廉價提供工作速度 口口貝铨的矩陣顯示裝置。 乂上所述，第一種實施形態之薄膜電晶體星 -25 - 552718
發明說嚷纔頁 ，或是取得1價之價數之元素或摻雜有鎳之氧化鋅、 MgxZnNx〇、CdxZnNx〇或氧化鑛；及閘極絕緣膜，其係具 有·第一絕緣膜’其係使用形成閘極與界面之氧化物以外 的材料；及第二絕緣膜，其係被該第一絕緣膜及前述半導 體層夹著’且形成兩者與界面’使用包含KNb〇3，KTa〇3 ，Βπ〇3 ’ CaSn〇3，CaZr03，CdSn03，SrHf〇3，SrSn〇3， SrTiOs，YSc03，CaHf03，MgCe〇3，SrCe〇3，BaCe03，SrZr〇3 ，BaZK)3，UGa〇2，UGa〇2 之混晶系（Lll (x+y)NaxKy) (Gai_zAlz)〇2或此等氧化物中之至少兩種的固溶體。 因而，藉由以不同的兩層絕緣膜構成閘極絕緣膜，可提 高形成第二絕緣膜與界面之半導體層的結晶性，並降低半 導體層與第二絕緣膜之界面的缺陷等級。此外，因係以氧 化物構成第二絕緣膜，因此藉由第二絕緣膜的材料可抑制 半導體層中的氧被奪取。此外，可良好地保持半導體層與 第一、’邑、，彖膜之界面附近的、结曰曰曰性。如此可實現斷開區域之 漏電：電平降低，且移動率高之切換特性良好的薄膜電晶 體。错此，可獲得容易使具有透明半導體膜之薄膜電晶體 之性能提高的效果。 上述薄膜電晶體中，前述第二絕緣膜宜為使用包含叫 ’ Ta205，Al2〇3，Ti〇2，Mg〇，Zr〇2 , stab—Zr〇2， K2〇 ’ U2〇 ’ Na2〇 ’ Rb2〇，In2〇3，La2〇3，ShCh，y2〇3 或此等氧化物中之至少兩種的固溶體者。如此，藉由以上 述氧化物構成第二絕緣膜，幾乎不發生因第二絕緣膜之材 料夺致半♦體層（氧化鋅等）中的氧被奪^。因此可提供更 -26- 552718
兩性能的薄膜電晶體。 第二種實施形態之薄膜電晶體的構造具備··半導體層， 其係使用氧化辞、MgxZni.x0、CdxZnix0或氧化鑛，或是 取得1價之價數之元素或摻雜有鎳之氧化鋅、MgxZni』、
CdxZni.x0或氧化録；及閘極絕緣膜，其係具有：第一絕緣 \其係使用形成閘極與界面之氧化物以外的材料；及第 ~緣膜，其係被該第一絕緣膜及前述半導體層夾著，且 形成兩者與界面，使用包含KNb〇3，KTa〇3, Oh…
CaZr03 ’ CdSn〇3，SrHf〇3，SrSn03，SrTi〇3，YSc〇3， CaHf〇3，MgCe03 ’ Si*Ce03，BaCe〇3，SrZrO;，BaZr03， = Ga02，LlGa022混晶系（仏令”小心卜）…〜zAlz)〇2或此 等氧化物中之至少兩種的固溶體。 因而，藉由以不同的兩層絕緣膜構成閘極絕緣膜，可提 高形成第二絕緣膜與界面之半導體層的結晶性，並降低半 V粗層與第一絕緣膜之界面的缺陷等級。此外，上述之氧 化物及固溶體與構成半導體層之氧化鋅等的晶格不整合小 ,可極良好地保持界面整合性。此外，因係以上述氧化物 構成第二絕緣膜，因此幾乎不發生因第二絕緣膜的材料導 致半導體層中的氧被奪取。此外，可良好地保持半導體層 與第二絕緣膜之界面附近的結晶性。如此可實現斷開區域 之漏電流電平降低，且移動率高之切換特性良好的薄膜電 晶體。藉此，可獲得容易使具有透明半導體膜之薄膜電晶 體之性能提高的效果。 上述各薄膜電晶體中’前述第一絕緣膜宜使用氮化石夕。 -27 - 552718 [g獎說績頁 氮化係具備：（1)即使在較低溫下，對氧化物絕緣膜仍顯示 高度絕緣特性；（2)透濕性低，可保持裝置的可靠性；（3) 與氧化矽比較，可抑制擴散離子等優點，因此可賦予閘極 絕緣膜良好的絕緣特性。因而即使形成薄的第二絕緣膜， 仍可充分確保閘極絕緣膜的絕緣性。因此可抑制包含不同 之兩種絕緣膜之閘極絕緣膜的厚度增加，可避免薄膜電晶 體尺寸大型化。
上述各薄膜電晶體中，宜在其上形成有前述半導體層， 進一步包含底層，其係使用包含KNb〇3 , KTa〇3， ’ CaSnCb，CaZiO3，CdSn〇3，SrHf〇3，Si*Sn〇3，SrTiOr YSc03’ CaHf〇3’ MgCe03, SrCe03, BaCe〇3’ SrZi.〇3, BaZr〇3 ，UGaC^，LlGa022 混晶系（Lli (x + y)NaxKy)(Gai zAy〇2 或 此等氧化物中之至少兩種的固溶體，以形成交錯型（第三種 實施形態）。
藉此，與前述薄膜電晶體之第二絕緣膜同樣地，與半 體層之晶格整合性良好。藉此，不論基板材料為何，均 :止半導體層的特性惡化’因此基板材料無須限定為與 導f層之晶格整合性良好的材料。因此，即使是具有透 半：體膜之交錯型薄膜電晶體’仍容易實現高性能化。 第四種實施形態之矩陣顯示裝置係具僙排列成矩陣狀 切換元件的矩陣顯示裝置，由於可使用上述任何—種薄) 電晶體作為前述㈣元件來構成’因此矩陣顯示的 換特性提高。 1 上述矩陣顯示裝i $包含驅動#述切換元件的驅動電3 -28- 552718
’使用上述任何_種薄膜電晶體作為構成前述驅動電路之 電晶體，㈣時形成前述切換元件及前述電晶體。 藉 亦藉由上述薄膜電晶體來構成構成驅動電路的電 曰曰虹可減v矩陣顯示裝置的製造步驟。因此可降低矩陣 顯示裝置的成本。 以上，本實施形態及前述其他實施形態中顯示幾種範例 ，不過本發明並不限定於上述各實施形態，可適用於依據 相同概念的全部構造。 發明說明項中的具體實施態樣及實施例僅在說明本發明 的技術内容’不應狹義解釋成僅限定於此種具體例，凡符 合本發明之精神且在以下敘述之申請專利範圍内，可作各 種變更來貫施。 [元件符號之說明] 1 薄膜電晶體 3 閘極 4 閘極絕緣膜 4a 第一絕緣膜 4b 第二絕緣膜 5 半導體層 11 薄膜電晶體 12 底層絕緣膜 22 源極驅動器 23 閘極驅動器 τ 電晶體 -29-
Claims (1)
- 552718 拾、申請專利範圍 1. 一種薄膜電晶體，其包含： 半導體層，其係使用氧化鋅、Μσ n 〜 〒 MgxZnUx〇 . Cd.Zm^O 或氧化鎘，或是取得1價之價數之开去七 丨貝要文之兀素或摻雜有鎳之氧 化鋅、MgxZni-xO、CdxZnbxO或氧化鎘；及 閘極絕緣膜，其係具有：第—絕緣膜，其係使用形成 閘極與界面之氧化物以外的材料；及第二絕緣膜，其铲 被該第一絕緣膜及前述半導體層夾著，使用形成兩者^ 界面的氧化物。 如申請專利範圍第1項之薄膜電晶體，其中前述第二絕 緣膜係使用包含 S1〇2，Ta2〇5，Αΐ2〇3，Τι〇2，，ϋ ，stab - Zr〇2，Ce〇2，Κ2〇，Ll2〇，Na2〇，扑2&〇，比办 ，La2〇3，Sc2〇3，Υ]〇3或此等氧化物中之至少兩種的固 溶體。 一種薄膜電晶體，其包含： 半導體層，其係使用氧化鋅、MgxZni x〇、CdxZn丨·χ〇 或氧化鎘，或是取得1價之價數之元素或摻雜有鎳之氧 化鋅、MgxZnkO、CdxZni-x〇或氧化鎘；及 閘極絕緣膜’其係具有：第一絕緣膜，其係使用形成 閘極與界面之氧化物以外的材料；及第二絕緣膜，其係 被該第一絕緣膜及前述半導體層夾著，且形成兩者與界 面’使用包含 KNb03，KTa03，BaTi03，CaSn〇3，CaZr03 ’ CdSn03，SrHf03，SrSn03，SrTi03，YSc03，CaHf〇3 ’ MgCe〇3，SrCe03，BaCe03，SrZr03，BaZiO;，LiGa〇2 -30- 552718 申請導莉Sf園繽買 ’ LiGa〇22 混晶系此等氧 化物中之至少兩種的固溶體。 4 ·如申請專利範圍第1至3項中任一項之薄膜電晶體，在其 上形成有前述半導體層，進一步包含底層，其係使用包 含 KNb〇3，KTa〇3 ’ BaTi〇3，CaSn〇3，CaZi.〇3，CdSn〇3 ，Si*Hf〇3，SrSn03，SrTi〇3，YSc〇3，CaHf〇3，MgCe03 ’ SiCe03 ’ BaCe03，SrZr03，BaZr03，LiGa02，LiGa02 之混晶系（Ui-wwNaxKAGai-zAUO2或此等氧化物中之 至少兩種的固溶體。 項之溥膜電晶體，其中 如申請專利範圍第1至3項中任 前述第一絕緣膜包含氮化矽。 如申請專利範圍第5項之薄膜電晶體，其係形成交錯型， 在其上形成有前述半導體層，進一步包含底層，豆係使 用包含KTa〇3, BaTl〇3, CaSn〇3, Caz⑼，〇 ’ sr_，SrS响 ’ SrTl〇3，YSe〇3，CaH阶，MgCe〇 ’ srCe〇3 ’ BaCe〇3，SrZr〇3 ’ BaZr〇i，LiGa〇2，LiGa〇 之混晶糸（L11例NaxKy)(Gal為）02或此等氧化物中之 至少兩種的固溶體。 一種矩陣顯示裝置，其包冬3 乂 .+ Μ — 、 成矩陣狀之切換元件， 月,J迷切換兀件包含申請專利範圍第 薄膜電晶體。 τ仕貝之 如申請專利範圍第7項之矩 含驅動前述切換元件之驅動 構成前述驅動電路之電晶陣顯示裝置，其中進一步包 電路， 體亦包含前述薄膜電晶體， -31 . 552718 申·請導·讀續員 …料顯換元件及前述電晶體。 前、/+、、-衣置，其包含排列成矩陣狀之切換元件 10 士 、兀件包含申請專利範圍第4項之薄膜電曰雕 10.如申請專利範圍 u牙只心得朕兒日日體 ^ ^ ^ ^ 、之矩陣顯示裝置，其中進一步g 。驅動：述切換元件之驅動電路， "^ 構成則返驅動電路之電晶體亦 並同時形成有前述切換 “]迷隸电曰曰體 η. -種矩陣顯示裝置，並：：。述電晶體。前述切換元件包含心狀之切換元件 12.如申請專利範圍第η項之矩陣、之核電晶體 含驅動前述切換元件之驅動電路，、衣，其中進-步( 構成如述驅動電路之雷θ轉 並同時形成有前述切換元件及::包含剐述薄膜電晶體 凡件及珂述電晶體。-32-
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2001
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- 2002-08-23 KR KR10-2002-0050164A patent/KR100490924B1/ko active IP Right Grant
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US10134852B2 (en) | 2012-06-29 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10453927B2 (en) | 2012-06-29 | 2019-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including nitride insulating layer and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030022692A (ko) | 2003-03-17 |
| KR100490924B1 (ko) | 2005-05-24 |
| JP4090716B2 (ja) | 2008-05-28 |
| US20030047785A1 (en) | 2003-03-13 |
| US6563174B2 (en) | 2003-05-13 |
| JP2003086808A (ja) | 2003-03-20 |
| CN1405898A (zh) | 2003-03-26 |
| CN1210814C (zh) | 2005-07-13 |
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