KR101174071B1 - 전자기기, 반도체장치 및 그의 제작방법 - Google Patents

전자기기, 반도체장치 및 그의 제작방법 Download PDF

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KR101174071B1
KR101174071B1 KR1020060009546A KR20060009546A KR101174071B1 KR 101174071 B1 KR101174071 B1 KR 101174071B1 KR 1020060009546 A KR1020060009546 A KR 1020060009546A KR 20060009546 A KR20060009546 A KR 20060009546A KR 101174071 B1 KR101174071 B1 KR 101174071B1
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South Korea
Prior art keywords
semiconductor layer
pattern
wiring
source wiring
film
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KR1020060009546A
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English (en)
Korean (ko)
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KR20060089144A (ko
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신지 마에카와
히데아키 쿠와바라
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020060009546A 2005-02-03 2006-02-01 전자기기, 반도체장치 및 그의 제작방법 KR101174071B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00027312 2005-02-03
JP2005027312 2005-02-03

Related Child Applications (6)

Application Number Title Priority Date Filing Date
KR1020080122616A Division KR20090008166A (ko) 2005-02-03 2008-12-04 액티브 매트릭스형 표시장치 및 그러한 표시장치를 가지는 전자기기
KR1020080122617A Division KR20090008167A (ko) 2005-02-03 2008-12-04 액티브 매트릭스형 액정 표시장치 및 액티브 매트릭스형 ｅｌ 표시장치
KR1020100018583A Division KR101022352B1 (ko) 2005-02-03 2010-03-02 반도체장치
KR1020110044522A Division KR101138856B1 (ko) 2005-02-03 2011-05-12 반도체장치
KR1020110044523A Division KR101138858B1 (ko) 2005-02-03 2011-05-12 반도체장치
KR1020120059363A Division KR101391961B1 (ko) 2005-02-03 2012-06-01 전자기기, 반도체장치 및 그의 제작방법

Publications (2)

Publication Number Publication Date
KR20060089144A KR20060089144A (ko) 2006-08-08
KR101174071B1 true KR101174071B1 (ko) 2012-08-14

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ID=36755635

Family Applications (7)

Application Number Title Priority Date Filing Date
KR1020060009546A KR101174071B1 (ko) 2005-02-03 2006-02-01 전자기기, 반도체장치 및 그의 제작방법
KR1020080122617A KR20090008167A (ko) 2005-02-03 2008-12-04 액티브 매트릭스형 액정 표시장치 및 액티브 매트릭스형 ｅｌ 표시장치
KR1020080122616A KR20090008166A (ko) 2005-02-03 2008-12-04 액티브 매트릭스형 표시장치 및 그러한 표시장치를 가지는 전자기기
KR1020100018583A KR101022352B1 (ko) 2005-02-03 2010-03-02 반도체장치
KR1020110044523A KR101138858B1 (ko) 2005-02-03 2011-05-12 반도체장치
KR1020110044522A KR101138856B1 (ko) 2005-02-03 2011-05-12 반도체장치
KR1020120059363A KR101391961B1 (ko) 2005-02-03 2012-06-01 전자기기, 반도체장치 및 그의 제작방법

Family Applications After (6)

Application Number Title Priority Date Filing Date
KR1020080122617A KR20090008167A (ko) 2005-02-03 2008-12-04 액티브 매트릭스형 액정 표시장치 및 액티브 매트릭스형 ｅｌ 표시장치
KR1020080122616A KR20090008166A (ko) 2005-02-03 2008-12-04 액티브 매트릭스형 표시장치 및 그러한 표시장치를 가지는 전자기기
KR1020100018583A KR101022352B1 (ko) 2005-02-03 2010-03-02 반도체장치
KR1020110044523A KR101138858B1 (ko) 2005-02-03 2011-05-12 반도체장치
KR1020110044522A KR101138856B1 (ko) 2005-02-03 2011-05-12 반도체장치
KR1020120059363A KR101391961B1 (ko) 2005-02-03 2012-06-01 전자기기, 반도체장치 및 그의 제작방법

Country Status (4)

Country Link
US (5) US7858451B2 (zh)
JP (4) JP2010166068A (zh)
KR (7) KR101174071B1 (zh)
CN (4) CN103730513B (zh)

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US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI472037B (zh) * 2005-01-28 2015-02-01 Semiconductor Energy Lab 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
JP4483639B2 (ja) * 2005-03-18 2010-06-16 セイコーエプソン株式会社 電気泳動表示装置とその駆動方法
US7928938B2 (en) 2005-04-19 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory circuit, display device and electronic apparatus
JP2008544477A (ja) 2005-05-09 2008-12-04 ナノ イープリント リミテッド 電子デバイス
US7537976B2 (en) * 2005-05-20 2009-05-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor
US8629819B2 (en) 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
EP1758072A3 (en) * 2005-08-24 2007-05-02 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
EP1770788A3 (en) 2005-09-29 2011-09-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
KR101112655B1 (ko) 2005-11-15 2012-02-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액티브 매트릭스 디스플레이 장치 및 텔레비전 수신기
JP2007225904A (ja) * 2006-02-23 2007-09-06 Mitsubishi Electric Corp 半導体光変調デバイス
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